Power Amplifier Module

Abstract

Conventional power amplifier modules embed thermal vias in the printed circuit board to ensure heat dissipation, but there are cases where sufficient heat dissipation cannot be obtained due to the design rules and thickness of the printed circuit board. There are also power amplifiers with a structure in which the electrically connected surface and the heat dissipation surface are separated on the top and bottom. However, each of these structures requires a different pattern, and they have had to be developed separately. The power amplifier module of the present disclosure can be used with both the top-side heat dissipation structure and the bottom-side heat dissipation structure by providing input terminals and output terminals on both the top and bottom surfaces.

Description

[Technical field]

[0001] The present disclosure relates to a power amplifier module that amplifies high frequency power, and in particular to a power amplifier module that can be used in both top and bottom heat exhaust configurations. [Background technology]

[0002] FIG. 9 shows an example of a conventional power amplifier module 900. A semiconductor chip 1 with transistors integrated thereon is die-bonded to a surface pattern 50 on a multi-layer resin substrate 10. The surface pattern 50 is connected to an undersurface ground terminal 34 provided on the back surface of the resin substrate 10 by a through hole 12 penetrating the resin substrate 10, and is electrically connected. The back surface of the semiconductor chip 1 serves as a ground terminal, and the undersurface ground terminal 34 functions as a ground terminal for the semiconductor chip 1. In addition, heat generated during operation of the semiconductor chip 1 is transferred to the undersurface ground terminal 34 via the through hole 12, so that the undersurface ground terminal 34 also functions as a heat exhaust terminal and a thermal pad for the power amplifier module 900. Such a structure is disclosed in, for example, Patent Document 1.

[0003] A power amplifier module is mounted on a substrate of a host transceiver and is used by connecting a power supply circuit, a receiving circuit, etc. Fig. 10 shows an example of a cross-sectional view of a conventional power amplifier module 900 mounted on, for example, a printed circuit board 60 of a host transceiver. The power amplifier module 900 is soldered onto the printed circuit board 60 as a surface mount component.

[0004] The input terminal 32, the output terminal 32a, and the bottom ground terminal 34 of the power amplifier module 900 are respectively joined to the terminal 62, the terminal 62a, and the terminal 64 provided on the printed circuit board 60 of the upper radio device system. The terminal 64 of the printed circuit board 60 joined to the bottom ground terminal 34 is thermally coupled to the back electrode 66 of the printed circuit board 60 through a thermal via 65 penetrating the printed circuit board 60. The back electrode 66 is joined to or in contact with a heat sink 70, and heat generated in the semiconductor chip 1 is dissipated by the heat sink 70. In this configuration, the surface electrically connecting the power amplifier module 900 and the heat dissipation surface are located on the same bottom surface.

[0005] Generally, power amplifier modules reach high temperatures, so heat dissipation is important. For this reason, thermal vias for heat dissipation are embedded in the printed circuit board 60 at the portion that comes into contact with the heat dissipation terminal (thermal pad) of the power amplifier module 900, and the heat is transferred to the heat sink 70. In order to achieve high heat dissipation, it is effective to increase the density of thermal vias and reduce the thermal resistance of the printed circuit board 60, but there are cases where sufficient heat dissipation cannot be obtained due to restrictions imposed by the design rules of the printed circuit board 60. Also, when the printed circuit board 60 is multi-layered and thickened in order to increase the integration density of the circuits, the thermal resistance of the printed circuit board 60 increases and sufficient heat dissipation may not be obtained.

[0006] On the other hand, a power amplifier having a structure in which the electrically connected surface and the heat dissipation surface are separated into upper and lower parts has also been disclosed. Fig. 11 shows an example of a conventional power amplifier module 910 having a separated structure in which the electrically connected surface and the heat dissipation surface are separated into upper and lower parts. The back surface of the semiconductor chip 1 is a ground terminal, and is connected to a ground terminal 24 provided on the surface of the mold 4 covering the resin substrate 10 on the side opposite the resin substrate 10 via a through hole penetrating the mold 4. The input side of the semiconductor chip 1 is connected to an input terminal 22 provided on the surface of the mold 4 covering the resin substrate 10 on the side opposite the resin substrate 10. The output side of the semiconductor chip 1 is connected to an output terminal 22a provided on the surface of the mold 4 covering the resin substrate 10 on the side opposite the resin substrate 10. In other words, the electrically connected surface is the mold 4 side, and the heat dissipation surface is the resin substrate 10 side, similar to the power amplifier module 900. Such a structure is disclosed in, for example, Patent Document 2.

[0007] 12 shows an example of a cross-sectional view of a conventional power amplifier module 910 mounted on a printed circuit board 60 of a host transceiver and a heat sink 70. The input terminal 22, the output terminal 22a, and the ground terminal 24 of the power amplifier module 910 are respectively joined to a terminal 62, a terminal 62a, and a terminal 64 provided on the printed circuit board 60 of the host wireless device system. The bottom ground terminal 34 is thermally coupled to the heat sink 70 via a TIM 71.

[0008] In the power amplifier module 910, the electrically connected surface and the heat dissipation surface are separated, which allows heat to be dissipated without passing through thermal vias in the printed circuit board 60, thereby achieving high heat dissipation. This structure is sometimes called a top side cooling (TSC) structure because when the electrically connected surface is placed on the bottom, the heat dissipation surface is placed on the top. In contrast to the top side cooling structure, the module structure of Fig. 9, in which the electrically connected surface and the heat dissipation surface are both on the bottom, is sometimes called a bottom side cooling (BSC) structure. [Prior art documents] [Patent documents]

[0009] [Patent Document 1] U.S. Patent Application No. 17 / 516360 (U.S. Patent Application Publication No. 2023 / 0133034) [Patent Document 2] Patent Publication No. 2022-104789 Summary of the Invention [Problem to be solved by the invention]

[0010] Because power amplifier modules with a top-side heat dissipation structure and power amplifier modules with a bottom-side heat dissipation structure have different patterns of back and front electrodes, vendors of power amplifier modules had to develop the power amplifier modules with top-side heat dissipation structure and the power amplifier modules with bottom-side heat dissipation structure separately.

[0011] The present disclosure has been made in consideration of the above-mentioned problems, and an object of the present disclosure is to provide a power amplifier module that can be used with both top-side and bottom-side heat exhaust, and to reduce the development costs and manufacturing costs of the power amplifier module. [Means for solving the problem]

[0012] The power amplifier module according to the present disclosure is a power amplifier module for amplifying high frequency waves, comprising a semiconductor chip on which an active element for amplifying high frequency waves is formed, a substrate, and a mold covering at least the surface of the substrate and having a surface opposite to the substrate forming an upper surface facing the lower surface of the power amplifier module. The substrate has a back surface constituting the lower surface of the power amplifier module and a front surface facing the back surface, a heat dissipation terminal is provided on the back surface, a heat dissipation structure to which the semiconductor chip is bonded and coupled with the heat dissipation terminal, an input matching circuit and an output matching circuit for impedance matching the semiconductor chip and the outside are formed, a control circuit for controlling the current of the semiconductor chip, and a power supply circuit for supplying power to the semiconductor chip are formed. The power amplifier module has an upper surface provided with a first input terminal connected to the input matching circuit, a first output terminal connected to the output matching circuit, a first control terminal connected to the control circuit, and a first power supply terminal connected to the power supply circuit, while the power amplifier module has a lower surface provided with a second input terminal connected to the input matching circuit, a second output terminal connected to the output matching circuit, a second control terminal connected to the control circuit, and a second power supply terminal connected to the power supply circuit. Effect of the Invention

[0013] According to the present disclosure, a power amplifier module that can be used with both top and bottom heat exhaust is provided, and the development and manufacturing costs of the power amplifier module can be reduced. [Brief description of the drawings]

[0014] [Figure 1] 1 is a circuit block diagram of a power amplifier module 100 according to a first embodiment. [Diagram 2] 1 is a cross-sectional view showing a power amplifier module 100. FIG. [Diagram 3] 1 is a cross-sectional view of the power amplifier module 100 when mounted as a bottom heat dissipation structure. [Figure 4] 1 is a cross-sectional view of the power amplifier module 100 when mounted as a top-surface heat dissipation structure. [Diagram 5] 10 is a cross-sectional view showing a modified example of the heat dissipation structure of the power amplifier module 100. FIG. [Figure 6] 1 is a cross-sectional view showing a power amplifier module 100 according to a modification of the first embodiment. [Figure 7] FIG. 11 is a top view showing the inside of a power amplifier module 200 according to a second embodiment. [Figure 8] FIG. 11 is a top view showing the inside of a power amplifier module 210 according to a modification of the second embodiment. [Figure 9] FIG. 9 is a cross-sectional view showing a conventional power amplifier module 900. [Figure 10]11 is a cross-sectional view of a power amplifier module 900 mounted in a bottom heat dissipation structure. [Figure 11] FIG. 9 is a cross-sectional view showing a conventional power amplifier module 910. [Figure 12] 9 is a cross-sectional view of a power amplifier module 910 mounted as a top-surface heat dissipation structure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015] Embodiment 1 A power amplifier according to an embodiment of the present disclosure will be described with reference to the drawings. The same or corresponding components are designated by the same reference numerals, and repeated description may be omitted.

[0016] 1 is a circuit block diagram of a power amplifier module 100 according to a first embodiment of the present invention. The power amplifier module 100 includes a semiconductor chip 1, an input matching circuit 16, an output matching circuit 17, a control circuit 18, and a power supply circuit 19 that are electrically connected to the semiconductor chip 1. An input terminal 22 and an input terminal 32 are electrically connected to the input matching circuit 16. An output terminal 22a and an output terminal 32a are electrically connected to the output matching circuit 17. A control terminal 23 and a control terminal 33 are electrically connected to the control circuit 18. A power supply terminal 25 and a power supply terminal 35 are electrically connected to the power supply circuit 19.

[0017] 2 is a cross-sectional view showing a power amplifier module 100 according to a first embodiment of the present invention. The power amplifier module 100 has a resin substrate 10. In the first embodiment, the resin substrate 10 is a two-layer substrate consisting of an upper layer 10a and a lower layer 10b. An intermediate wiring layer is provided between the upper layer 10a and the lower layer 10b. The resin substrate 10 may be a substrate having more layers. The back surface of the resin substrate 10 constitutes a lower surface 105 of the power amplifier module 100.

[0018] An input matching circuit 16, an output matching circuit 17, a control circuit 18 (not shown), and a power supply circuit 19 (not shown) are formed on the resin substrate 10. A surface 13 of the resin substrate 10, including the input matching circuit 16, the output matching circuit 17, the control circuit 18, the power supply circuit 19, and the semiconductor chip 1, is covered with a mold 4. In other words, the upper surface side of the power amplifier module 100 is covered with the mold 4. The surface of the mold 4 opposite the resin substrate 10 forms an upper surface 103 of the power amplifier module 100.

[0019] The semiconductor chip 1 on which transistors are integrated is die-bonded to a surface pattern 50 on a resin substrate 10 by metal solder, conductive resin, or the like. The surface pattern 50 is joined and electrically connected to an undersurface ground terminal 34 provided on the back surface of the resin substrate 10 by a through hole 12 penetrating the resin substrate 10. The back surface of the semiconductor chip 1 serves as a ground terminal, and the undersurface ground terminal 34 functions as a ground terminal for the power amplifier module 100. Heat generated during operation of the semiconductor chip 1 is transferred to the undersurface ground terminal 34 via the through hole 12, so that the undersurface ground terminal 34 also functions as a heat dissipation terminal and thermal pad for the power amplifier module 100.

[0020] In the first embodiment, the semiconductor chip 1 is a semiconductor die on which a HEMT (High Electron Mobility Transistor) mainly made of GaN (Gallium Nitride) is formed as an active element. The semiconductor chip 1 may be mainly made of other materials such as gallium arsenide or silicon, and the active element may be a MOSFET. In the first embodiment, the power amplifier module 100 forms a one-stage amplifier, but may be a multi-stage amplifier or may be configured as a Doherty amplifier. A configuration using multiple semiconductor chips may be used, or a configuration in which passive elements are formed on the semiconductor chip 1 may be used.

[0021] The surface pattern 51, the surface pattern 52, and the chip component 42 constitute a part of the input matching circuit 16. The surface pattern 51 is electrically connected to the input side of the semiconductor chip 1 via the wire 3. The input terminal 32 provided on the back surface of the resin substrate 10 is electrically connected to the surface pattern 52 via the through hole 36 and the internal conductor pattern layer 38. The input terminal 22 provided on the upper surface of the mold 4 is electrically connected to the surface pattern 52 by the conductor 26 that penetrates the mold 4. That is, the input side of the semiconductor chip 1 is connected, via an input matching circuit 16 formed in the resin substrate 10, to an input terminal 32 provided on the rear surface of the resin substrate 10, i.e., the lower surface 105 of the power amplifier module 100, and to an input terminal 22 provided on the upper surface of the mold 4, i.e., the upper surface 103 of the power amplifier module 100.

[0022] The input matching circuit 16 is an impedance matching circuit that matches the impedance (usually 50 Ω) seen from the input terminal 32 to the outside and the impedance on the input side of the semiconductor chip 1. The input matching circuit 16 is also an impedance matching circuit that matches the impedance (usually 50 Ω) seen from the input terminal 22 to the outside and the impedance on the input side of the semiconductor chip 1.

[0023] The surface pattern 53, the surface pattern 54, and the chip component 44 constitute a part of the output matching circuit 17. The surface pattern 53 is electrically connected to the output side of the semiconductor chip 1 via the wire 3a. The output terminal 32a provided on the back surface of the resin substrate 10 is electrically connected to the surface pattern 54 via the through hole 37 and the internal conductor pattern layer 39. The output terminal 22a provided on the upper surface of the mold 4 is electrically connected to the surface pattern 54 by the conductor 27 that penetrates the mold 4. In other words, the output side of the semiconductor chip 1 is connected, via an output matching circuit 17 formed on the resin substrate 10, to an output terminal 32a provided on the rear surface of the resin substrate 10, i.e., the lower surface 105 of the power amplifier module 100, and to an output terminal 22a provided on the upper surface of the mold 4, i.e., the upper surface 103 of the power amplifier module 100.

[0024] The output matching circuit 17 is an impedance matching circuit that matches the impedance (usually 50Ω) seen from the output terminal 32a to the outside with the impedance on the output side of the semiconductor chip 1. The output matching circuit 17 is also an impedance matching circuit that matches the impedance (usually 50Ω) seen from the output terminal 22a to the outside with the impedance on the output side of the semiconductor chip 1.

[0025] A high-frequency signal input from the outside to the input terminal 22 or the input terminal 32 is input to the semiconductor chip 1 via the input matching circuit 16. The high-frequency signal amplified by the semiconductor chip 1 is output to the outside from the output terminal 22a or the output terminal 32a via the output matching circuit 17.

[0026] On the resin substrate 10, a control circuit 18 (not shown) for controlling the current of the semiconductor chip 1 and a power supply circuit 19 (not shown) for supplying power to the semiconductor chip 1 are formed. The control circuit 18 is electrically connected to the input side of the semiconductor chip 1. The control circuit 18 is also electrically connected to a control terminal 33 (not shown) provided on the back surface of the resin substrate 10 and a control terminal 23 (not shown) provided on the upper surface of the mold 4. The power supply circuit 19 is electrically connected to the output side of the semiconductor chip 1. The power supply circuit 19 is also electrically connected to a power supply terminal 35 (not shown) provided on the back surface of the resin substrate 10 and a power supply terminal 25 (not shown) provided on the upper surface of the mold 4.

[0027] The control circuit 18 is a circuit for applying a negative bias to the gate in order to set the idle current of the GaN-HEMT formed in the semiconductor chip 1. The control circuit 18 applies a bias voltage applied from the outside to the control terminal 23 or the control terminal 33 to the gate of the semiconductor chip 1. The control circuit 18 may be configured as a passive circuit composed of a surface pattern, chip components, etc., or may be a control IC that generates a bias voltage to be applied to the semiconductor chip 1 in response to a digital signal applied from the outside to the control terminal 23 or the control terminal 33 or the ambient temperature, or may be a combination of these. At a frequency at which the power amplifier module 100 performs an amplifying operation, it is desirable that the impedance of the control circuit 18 is set so that it appears open from the gate of the semiconductor chip 1.

[0028] The power supply circuit 19 is a circuit for supplying power to the drain of the GaN-HEMT formed on the semiconductor chip 1. The power supply circuit 19 supplies power applied from the outside to the power supply terminal 25 or the power supply terminal 35 to the drain of the semiconductor chip 1. The power supply circuit 19 may be configured as a passive circuit composed of a surface pattern, chip components, etc., or may be a circuit that also uses an active element such as a regulator element. At a frequency at which the power amplifier module 100 performs an amplifying operation, it is desirable that the impedance of the power supply circuit 19 is set so that it appears open from the drain of the semiconductor chip 1.

[0029] A ground terminal 24 is provided on the upper surface of the mold 4. The ground terminal 24 is electrically connected to the surface pattern 50 via a conductor 28 that penetrates the mold 4. The ground terminal 24 serves as a ground terminal for the power amplifier module 100, similar to the bottom surface ground terminal 34.

[0030] As described above, power amplifier module 100 according to the first embodiment has electrode terminals having the same function arranged on both upper surface 103 and lower surface 105, and therefore can be used as both an upper surface heat dissipation structure and a lower surface heat dissipation structure in a higher-level wireless device, thereby making it possible to reduce development costs. Fig. 3 shows an example of a cross-sectional view of the power amplifier module 100 when it is mounted as a bottom heat dissipation structure, and Fig. 4 shows an example of a cross-sectional view of the power amplifier module 100 when it is mounted as a top heat dissipation structure.

[0031] 3, when mounted as a bottom heat dissipation structure, the input terminal 32, output terminal 32a, and bottom ground terminal 34 of the power amplifier module 100 are respectively joined to terminals 62, 62a, and 64 provided on a printed circuit board 60 of a higher-level wireless device system. Although not shown, the control terminal 33 and power supply terminal 35 are also respectively connected to terminals provided on the printed circuit board 60. Metal solder, conductive resin, etc. can be used for the joining. The terminals 64 of the printed circuit board 60 joined to the bottom ground terminals 34 are thermally coupled to the back electrodes 66 of the printed circuit board 60 through thermal vias 65 that penetrate the printed circuit board 60. The back electrode 66 is joined to or in contact with a heat sink 70, and heat generated in the semiconductor chip 1 is dissipated by the heat sink 70.

[0032] 4, when mounted as an upper surface heat dissipation structure, the input terminal 22, output terminal 22a, and ground terminal 24 of the power amplifier module 100 are respectively joined to terminals 62, 62a, and 64 provided on a printed circuit board 60 of a higher-level wireless device system. Although not shown, the control terminal 23 and power supply terminal 25 are also respectively connected to terminals provided on the printed circuit board 60. Metal solder, conductive resin, etc. can be used for the joining.

[0033] The bottom ground terminal 34 is thermally coupled to the heat sink 70 via an insulating TIM 71. A TIM (Thermal Interface Material) is a thermally conductive material inserted between components to efficiently dissipate unnecessary heat generated inside an electronic device. Examples of such a material include high heat dissipation grease and a sheet in which a resin such as silicone or epoxy is highly filled with a high thermal conductive filler to improve thermal conductivity. A TIM is generally an insulator. Although the heat sink 70 is generally made of a metal having electrical conductivity, the use of an insulating TIM prevents the input terminal 22, the output terminal 22a, the ground terminal 24, the control terminal 23, and the power supply terminal 25 from being short-circuited.

[0034] As described above, the power amplifier module 100 according to the first embodiment has the semiconductor chip 1 on which an active element for amplifying high frequency waves is formed. The back surface of the resin substrate 10 constitutes the underside 105 of the power amplifier module 100, and the back surface is provided with an underside ground terminal 34 that acts as a heat dissipation terminal for the power amplifier module 100. An input matching circuit 16 and an output matching circuit 17 that match the impedance between the semiconductor chip 1 and the outside are also formed on the resin substrate 10, as well as a control circuit 18 that controls the current of the semiconductor chip 1 and a power supply circuit 19 that supplies power to the semiconductor chip. The front surface pattern 50, the through holes 12, and the underside ground terminal 34 form a heat dissipation structure, and the semiconductor chip 1 is joined to the front surface pattern 50, which is the exposed portion on the front surface side. A surface 13 of the resin substrate 10, including the input matching circuit 16, the output matching circuit 17, the control circuit 18, the power supply circuit 19, and the semiconductor chip 1, is covered with a mold 4. In other words, the upper surface side of the power amplifier module 100 is covered with the mold 4. The surface of the mold 4 forms an upper surface 103 of the power amplifier module 100. Further, on the upper surface 103 of the power amplifier module, there are provided an input terminal 22 which is a first input terminal connected to the input matching circuit 16, an output terminal 22a which is a first output terminal connected to the output matching circuit 17, a control terminal 23 which is a first control terminal connected to the control circuit 18, and a power supply terminal 25 which is a first power supply terminal connected to the power supply circuit 19. The underside 105 of the power amplifier module is provided with an input terminal 32 which is a second input terminal connected to the input matching circuit 16, an output terminal 32a which is a second output terminal connected to the output matching circuit 17, a control terminal 33 which is a second control terminal connected to the control circuit 18, and a power supply terminal 35 which is a second power supply terminal connected to the power supply circuit 19.

[0035] As described above, the power amplifier module 100 according to the first embodiment has terminals for connecting to the outside arranged on both the top and bottom surfaces. Therefore, when used in a wireless device, it can be used as either a top-side heat dissipation structure or a bottom-side heat dissipation structure. In addition, the development cost of the power amplifier module itself can be reduced. When used as a top-side heat dissipation structure, the insulating TIM is sandwiched between the heat sink, so there is no risk of short-circuiting between terminals on the top side.

[0036] In the first embodiment, the surface pattern 50, the through holes 12, and the underside ground terminals 34 form a heat dissipation structure, and the semiconductor chip 1 is bonded to the surface pattern 50, which is the exposed portion on the surface side, but the heat dissipation structure may be a so-called copper inlay substrate in which a metal body 14 penetrating the resin substrate 10 is embedded, as shown in Fig. 5(A). Also, as shown in Fig. 5(B), the heat dissipation structure may be a structure in which a cavity 15 is provided penetrating the resin substrate 10, and the semiconductor chip 1 is die-bonded to the underside ground terminals 34 exposed from the cavity 15 when viewed from above. In this case, it is preferable that the underside ground terminals 34 are made of a relatively thick metal body.

[0037] A variation of the first embodiment. As in the power amplifier module 101 shown in FIG. 6, the sizes of the ground terminal 24 on the top surface and the ground terminal 34 on the bottom surface may be made equal. As shown in FIG. 3, when the power amplifier module 100 is used as a bottom heat exhaust, the top surface is open and a separate shield is required to suppress unwanted waves. In contrast, by making the size of ground terminal 24, which is the ground terminal on the top surface, and bottom ground terminal 34, which is the ground terminal on the bottom surface, equally large, as in power amplifier module 101, the top and bottom surfaces of the power amplifier module are each shielded with a metal layer, thereby suppressing unwanted waves.

[0038] Embodiment 2 7 is a top view showing the inside of a power amplifier module 200 according to the second embodiment. Here, the resin substrate 11 is shown from above through a mold 4. In the second embodiment, a resin substrate 11 is used instead of the resin substrate 10 in the first embodiment. A chip component 48 constitutes a part of an input matching circuit 16. A chip component 49 constitutes a part of an output matching circuit 17.

[0039] The surface pattern 52 in the resin substrate 10 is divided into surface patterns 52a and 52b in the resin substrate 11. An end of the surface pattern 52a is an internal terminal 56a, and an end of the surface pattern 52b is an internal terminal 56b. The internal terminals 56a and 56b are a pair of internal terminals arranged adjacent to each other with a space between them. The surface pattern 52b is electrically connected to the input terminal 32 provided on the back surface of the resin substrate 11 via the through hole 36 and the internal conductor pattern layer 38. The surface pattern 54 in the resin substrate 10 is divided into surface patterns 54a and 54b in the resin substrate 11. An end of the surface pattern 54a is an internal terminal 57a, and an end of the surface pattern 52b is an internal terminal 57b. The internal terminals 57a and 57b are a pair of internal terminals arranged adjacent to each other with a space between them. The surface pattern 54b is electrically connected to the output terminal 32a provided on the back surface of the resin substrate 11 via the through hole 37 and the internal conductor pattern layer 39.

[0040] The internal terminals 56a, 56b, 57a, and 57b are provided so that bonding wires can be joined thereto or chip components can be mounted thereon. In the second embodiment, the internal terminals 56a and 56b are wired and electrically connected by a wire 74. The internal terminals 57a and 57b are wired and electrically connected by a wire 75. Similarly, although not shown, a pair of internal terminals arranged adjacent to but spaced apart is provided on the wiring that connects the control circuit 18 and the second control terminal, the control terminal 33, and the wiring is connected by a wire. Also, a pair of internal terminals arranged adjacent to but spaced apart is provided on the wiring that connects the power supply circuit 19 and the second power supply terminal, the power supply terminal 35, and the wiring is connected by a wire. The other parts are similar to those of the power amplifier module 100 .

[0041] As with power amplifier module 100 according to embodiment 1, power amplifier module 200 according to embodiment 2 has terminals for connection to the outside arranged on both the top and bottom surfaces. Therefore, when used in a wireless device, it can be used as either an top-surface heat dissipation structure or a bottom-surface heat dissipation structure. Incidentally, when using power amplifier module 100 as an upper surface heat exhaust, as described in the first embodiment, if upper surface 103 of power amplifier module 100 is thermally coupled to heat sink 70 via insulating TIM 71, input terminal 22, output terminal 22a, ground terminal 24, control terminal 23, and power supply terminal 25 will not be short-circuited even if heat sink 70 is conductive. However, conductive TIMs are also available on the market, and short-circuiting can be a problem when using these.

[0042] In the power amplifier module 200 of the second embodiment, by eliminating the wiring using the wires 74, 75, the wire that connects the control circuit 18 to the control terminal 33, and the wire that connects the power supply circuit 19 to the control terminal 33 during manufacturing, even if a conductive TIM is used or a conductive heat sink is brought into direct contact with the upper surface 103, there is no short circuit between the terminals. In this way, by simply eliminating certain wiring during the manufacturing process, the power amplifier module 200 can prevent short circuits between terminals without changing other designs, and the development costs of the power amplifier module itself can be reduced.

[0043] A variation of the second embodiment. In the second embodiment, the pair of internal terminals are electrically connected by wiring, but may be electrically connected by a chip component instead of a wire. 8 is a top view showing the inside of a power amplifier module 210 according to a modification of the second embodiment. Here, the resin substrate 11 is shown from above through the mold 4. In the modification of the second embodiment, the internal terminals 56a and 56b are electrically connected to each other through the chip component 40 instead of the wire 74. The internal terminals 57a and 57b are electrically connected to each other through the chip component 46 instead of the wire 75.

[0044] Similarly, although not shown, a pair of internal terminals arranged adjacent to but spaced apart is provided on the wiring that connects the control circuit 18 and the second control terminal, the control terminal 33, and the wiring is connected by chip components. Also, a pair of internal terminals arranged adjacent to but spaced apart is provided on the wiring that connects the power supply circuit 19 and the second power supply terminal, the power supply terminal 35, and the wiring is connected by chip components. Other parts are similar to those of the power amplifier module 200. Note that electrical continuity through wiring and electrical continuity through chip components may be mixed.

[0045] The present disclosure is not limited to the above-described embodiments, and includes various modified examples. For example, the above-described embodiments have been described in detail to clearly explain the present disclosure, and the present disclosure is not necessarily limited to those including all of the configurations described. In addition, it is possible to add, delete, or replace part of the configuration of the embodiments with other configurations. The power amplifier module according to the embodiment of the present invention is suitable for small base stations for 5th generation mobile communication systems that use, for example, the 3.7 GHz band of the sub-6 GHz band (Sub6) and introduce Massive MIMO. [Explanation of symbols]

[0046] 1 semiconductor chip, 4 mold, 10, 11 resin substrate, 12 through hole, 13 surface, 16 input matching circuit, 17 output matching circuit, 18 control circuit, 19 power supply circuit, 22, 32 input terminal, 22a, 32a output terminal, 23, 33 control terminal, 24 ground terminal, 25, 35 power supply terminal, 26, 27, 28 conductor, 34 bottom surface ground terminal, 48, 49 chip component, 50 surface pattern, 56a, 56b, 57a, 57b internal terminal, 60 printed circuit board, 65 thermal via, 66 back surface electrode, 70 heat sink, 74, 75 wire, 100, 101, 200, 201 power amplifier module, 103 top surface, 105 bottom surface

Claims

1. A power amplifier module for amplifying high frequency waves, comprising: a semiconductor chip having an active element for amplifying high frequency waves formed thereon; a substrate having a back surface constituting a bottom surface of the power amplifier module and a front surface opposite to the back surface, a heat dissipation terminal provided on the back surface, a heat dissipation structure to which the semiconductor chip is joined and coupled with the heat dissipation terminal, an input matching circuit and an output matching circuit for impedance matching the semiconductor chip and the outside, a control circuit for controlling a current of the semiconductor chip, and a power supply circuit for supplying power to the semiconductor chip; a mold covering at least the surface of the substrate, the surface opposite the substrate forming an upper surface facing the lower surface of the power amplifier module; Equipped with a first input terminal connected to the input matching circuit, a first output terminal connected to the output matching circuit, a first control terminal connected to the control circuit, and a first power supply terminal connected to the power supply circuit are provided on the top surface of the power amplifier module; a second input terminal connected to the input matching circuit, a second output terminal connected to the output matching circuit, a second control terminal connected to the control circuit, and a second power supply terminal connected to the power supply circuit are provided on the lower surface of the power amplifier module; A power amplifier module comprising:

2. 2. The power amplifier module according to claim 1, wherein a path for electrically connecting the second input terminal and the input matching circuit, a path for electrically connecting the second output terminal and the output matching circuit, a path for electrically connecting the second power supply terminal and the power supply circuit, and a path for electrically connecting the second control terminal and the control circuit are provided with a pair of adjacent but spaced-apart internal terminals on the path.

3. 3. The power amplifier module according to claim 2, wherein the pair of internal terminals are electrically connected by wiring.

4. 3. The power amplifier module according to claim 2, wherein the pair of internal terminals is electrically connected by a mounted chip component.

5. A power amplifier module for amplifying high frequency waves, comprising: a semiconductor chip having an active element for amplifying high frequency waves formed thereon; a substrate having a back surface constituting a bottom surface of the power amplifier module and a front surface opposite to the back surface, a heat dissipation terminal provided on the back surface, a heat dissipation structure to which the semiconductor chip is joined and coupled with the heat dissipation terminal, an input matching circuit and an output matching circuit for impedance matching the semiconductor chip and the outside, a control circuit for controlling a current of the semiconductor chip, and a power supply circuit for supplying power to the semiconductor chip; a mold covering at least the surface of the substrate, the surface opposite the substrate forming an upper surface facing the lower surface of the power amplifier module; Equipped with a first input terminal connected to the input matching circuit, a first output terminal connected to the output matching circuit, a first control terminal connected to the control circuit, and a first power supply terminal connected to the power supply circuit are provided on the top surface of the power amplifier module; a second input terminal, a second output terminal, a second power supply terminal, and a second control terminal are provided on the lower surface of the power amplifier module; a connection path for connecting the second input terminal and the input matching circuit, a connection path for connecting the second output terminal and the output matching circuit, a connection path for connecting the second power supply terminal and the power supply circuit, and a connection path for connecting the second control terminal and the control circuit are provided, and each of the connection paths has a pair of adjacent but spaced apart internal terminals which can be electrically connected by wiring or mounting a chip component thereon; A power amplifier module comprising:

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