SUBSTRATE PROCESSING APPARATUS AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - Patent application

Abstract

To suppress variations in a width of a film formed in a substrate outer edge part and an exposed width of the substrate outer edge part.SOLUTION: A substrate processing device of an embodiment comprises: a substrate holding unit for holding a substrate; a rotation support unit for supporting the substrate holding unit and rotating the substrate held in the substrate holding unit in a circumferential direction; a driving unit for driving the substrate holding unit in a surface direction of the substrate with respect to the rotation support unit; a detection unit for detecting an outer edge part of the substrate held in the substrate holding unit; a chemical discharge unit for discharging chemical to the outer edge part held in the substrate holding unit; and a control unit for driving the substrate holding unit by the driving unit so that a center position in a plane of the substrate held in the substrate holding unit matches a rotation shaft of the rotation support unit on the basis of a position of the outer edge part detected by the detection unit.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] An embodiment of the present invention relates to a substrate processing apparatus and a method for manufacturing a semiconductor device. [Background technology]

[0002] In the manufacturing process of a semiconductor device, a process of discharging a chemical solution onto the outer edge of a substrate may be performed. In the process of discharging the chemical solution, the substrate is held on a substrate holder, and while rotating the substrate together with the substrate holder, the chemical solution is discharged in the circumferential direction of the substrate. This forms a ring-shaped film on the outer edge of the substrate, or removes a part of the film on the substrate to expose the outer edge of the substrate.

[0003] However, during the chemical discharge process, the substrate may be placed on the substrate holder in a state where the center position of the substrate surface does not coincide with the rotation axis of the substrate, causing the width of the film formed on the outer edge of the substrate or the exposed width of the outer edge of the substrate to vary in the circumferential direction of the substrate. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2001-110712 A [Patent Document 2] International Publication No. 2020 / 084938 [Patent Document 2] JP 2014-027298 A [Patent Document 3] JP 2011-258925 A [Patent Document 4] JP 2001-071163 A Summary of the Invention [Problem to be solved by the invention]

[0005] An object of one embodiment is to provide a substrate processing apparatus and a method for manufacturing a semiconductor device that can suppress variations in the width of a film formed on an outer edge portion of a substrate and in the exposed width of the outer edge portion of the substrate. [Means for solving the problem]

[0006] The substrate processing apparatus of the embodiment includes a substrate holding section that holds a substrate, a rotation support section that supports the substrate holding section and rotates the substrate held by the substrate holding section in a circumferential direction, a drive section that drives the substrate holding section in a surface direction of the substrate relative to the rotation support section, a detection section that detects an outer edge of the substrate held by the substrate holding section, and a chemical liquid discharge section that discharges a chemical liquid onto the outer edge of the substrate held by the substrate holding section. a locking mechanism that fixes a position of the substrate relative to the substrate holding part in the planar direction and fixes a position of the substrate holding part in the planar direction relative to the rotation support part; and a control unit that drives the substrate holding unit using the drive unit so that the center position within the plane of the substrate held by the substrate holding unit coincides with the rotation axis of the rotation support unit based on the position of the outer edge detected by the detection unit. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram showing an example of a configuration of a substrate processing apparatus according to an embodiment. [Diagram 2] 5A and 5B are diagrams showing an example of a method for detecting the outer edge of a wafer by a detection unit included in the substrate processing apparatus according to the embodiment. [Diagram 3] FIG. 4 is a diagram showing an example of the configuration of a lock mechanism included in the substrate processing apparatus according to the embodiment. [Figure 4] 5A to 5C are diagrams showing an example of a procedure of a wafer position correction process in the substrate processing apparatus according to the embodiment. [Diagram 5] 1 is a schematic diagram of a wafer processed by the substrate processing apparatus according to an embodiment; [Figure 6] FIG. 13 is a schematic diagram of a wafer processed by a substrate processing apparatus according to a comparative example. [Figure 7] FIG. 13 is a diagram showing an example of the configuration of a substrate processing apparatus according to a first modified example of the embodiment. [Figure 8]10A and 10B are diagrams showing an example of a method for detecting the outer edge of a wafer by a detection unit included in the substrate processing apparatus according to the first modified example of the embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] The present invention will be described in detail below with reference to the drawings. Note that the present invention is not limited to the following embodiments. In addition, the components in the following embodiments include those that a person skilled in the art can easily imagine or that are substantially the same.

[0009] (Configuration example of substrate processing apparatus) 1 is a diagram showing an example of the configuration of a substrate processing apparatus 1 according to an embodiment. The substrate processing apparatus 1 of the embodiment is configured as a chemical liquid discharge apparatus that discharges a chemical liquid onto the outer peripheral portion of a wafer W as a substrate.

[0010] As shown in FIG. 1, the substrate processing apparatus 1 includes a rotation support unit 11, a substrate holder 12, a drive unit 13, a cup 15, a chemical nozzle 21, a supply pipe 22, a valve 23, a chemical tank 24, a detection unit 30, and a control unit 50.

[0011] The rotation support part 11 includes a rotation motor (not shown) and rotatably supports the substrate holding part 12 connected to an upper end part of the rotation support part 11. In this way, the rotation support part 11 rotates the wafer W held by the substrate holding part 12 together with the substrate holding part 12 in the circumferential direction of the wafer W.

[0012] The substrate holder 12 has, for example, a circular, flat mounting surface, and is configured to be able to hold a wafer W on the mounting surface.

[0013] The driving unit 13 is provided at the lower end of the substrate holding unit 12, at a connection portion with the rotation support unit 11. The driving unit 13 includes, for example, a stepping motor (not shown) and drives the substrate holding unit 12 in the surface direction of the wafer W.

[0014] Further, a locking mechanism (not shown) is provided for the rotation support part 11, the substrate holding part 12, and the drive part 13. The locking mechanism fixes the position of the wafer W in the surface direction of the wafer W relative to the substrate holding part 12, and fixes the position of the substrate holding part 12 in the surface direction of the wafer W relative to the rotation support part 11. The detailed configuration of the locking mechanism will be described later.

[0015] Chemical nozzle 21 as a chemical discharge part is disposed above the outer edge of wafer W supported by substrate holder 12, and discharges chemical solution CS to the outer edge of wafer W. Chemical nozzle 21 is connected to one end on the downstream side of supply pipe 22 that supplies chemical solution to substrate processing apparatus 1.

[0016] The supply pipe 22 is provided with a valve 23 , and one end of the upstream side of the supply pipe 22 is connected to a chemical tank 24 .

[0017] A chemical liquid is stored in the chemical liquid tank 24. The chemical liquid stored in the chemical liquid tank 24 is, for example, a removal liquid for removing a film such as a resin film on the wafer W, or a raw material liquid that serves as a raw material for a film such as a resin film to be formed on the wafer W.

[0018] In this manner, various chemical liquids can be stored in the chemical liquid tank 24 according to the processing contents for the wafer W. In other words, the processing contents for the wafer W can be appropriately changed according to the chemical liquid stored in the chemical liquid tank 24.

[0019] For example, when the above-mentioned removal liquid is stored in the chemical tank 24, a process can be performed to remove a part of the film formed on the wafer W to expose the outer edge of the wafer W. Also, when the above-mentioned raw material liquid is stored in the chemical tank 24, a process can be performed to form a ring-shaped film on the outer edge of the wafer W.

[0020] The chemical liquid is pressure-fed to the chemical liquid nozzle 21 via the chemical liquid tank 24, the valve 23, and the supply pipe 22 by a pump or the like (not shown). When the chemical liquid is discharged from the chemical liquid nozzle 21 to the outer peripheral portion of the wafer W, the wafer W is rotated by the rotation support part 11. As a result, the excess chemical liquid discharged to the outer peripheral portion of the wafer W is shaken off from the wafer W by centrifugal force.

[0021] The cup 15 is disposed so as to surround the rotation support part 11 and the substrate holding part 12. The upper end part of the cup 15 protrudes above the outer edge part of the wafer W held by the substrate holding part 12.

[0022] As a result, the chemical liquid shaken off from the wafer W by the centrifugal force is received by the cup 15, so that it is possible to prevent the chemical liquid from scattering around. In addition, the chemical liquid received in the cup 15 can be collected and reused.

[0023] The detection unit 30 is provided near the outer edge of the wafer W at a position away from the chemical nozzle 21 in the circumferential direction of the wafer W, and detects the outer edge of the wafer W. In the example of Fig. 1, the detection unit 30 is disposed at a position 180° away from the chemical nozzle 21 in the circumferential direction of the wafer W. The direction along the surface of the wafer W and from the chemical nozzle 21 to the detection unit 30 is defined as, for example, the X direction.

[0024] In addition, in the initial state before processing of the wafer W begins, for example, the center position of the substrate holding part 12 in the surface direction of the wafer W and the rotation axis of the rotation support part 11 are located on the line connecting the chemical liquid nozzle 21 and the detection part 30.

[0025] The detection unit 30 is a laser sensor or the like that includes a light-projecting unit 31 and a light-receiving unit 32. The light-projecting unit 31 is provided above the outer edge of the wafer W, and projects laser light LR toward the outer edge of the wafer W. The light-receiving unit 32 is provided below the outer edge of the wafer W at a position facing the light-projecting unit 31, and receives the laser light LR from the light-projecting unit 31.

[0026] The control unit 50 is configured as a computer including, for example, a central processing unit (CPU), a read only memory (ROM), and a random access memory (RAM), and controls each part of the substrate processing apparatus 1.

[0027] That is, the control unit 50 controls a rotation motor (not shown) to rotate the rotation support unit 11. The control unit 50 also controls the drive unit 13 to drive the substrate holding unit 12. The control unit 50 also controls a locking mechanism (not shown) to fix the positions of the wafer W and the substrate holding unit 12. The control unit 50 also controls the opening and closing of the valve 23 to control the supply of the chemical liquid to the wafer W. The control unit 50 also controls the detection unit 30 to detect the outer edge of the wafer W.

[0028] The control unit 50 may also include a storage device (not shown). The storage device may store, for example, control parameters of the substrate processing apparatus 1 and position information of the outer edge of the wafer W detected by the detection unit 30.

[0029] FIG. 2 is a diagram showing an example of a method for detecting the outer edge of the wafer W by the detector 30 included in the substrate processing apparatus 1 according to the embodiment.

[0030] When the wafer W is loaded into the substrate processing apparatus 1, the wafer W may be placed on the substrate holding part 12 in a state in which the central position within the surface of the wafer W does not coincide with the rotation axis of the rotation support part 11. When the wafer W is placed on the substrate holding part 12, the control part 50 of the substrate processing apparatus 1 causes the detection part 30 to detect the position of the outer edge of the wafer W before the process of discharging a chemical solution onto the wafer W.

[0031] 2(a), in detecting the outer edge of the wafer W, a laser beam LR is projected from a light projecting unit 31 of a detection unit 30 toward the outer edge of the wafer W from above the wafer W placed on the substrate holding unit 12. The laser beam LR is received by a light receiving unit 32 provided below the wafer W so as to face the light projecting unit 31.

[0032] At this time, depending on the position of the wafer W in the substrate holding portion 12, a portion of the laser light LR from the light projecting portion 31 is blocked by the outer edge of the wafer W, and the laser light LR that has passed outside the outer edge of the wafer W without being blocked reaches the light receiving portion 32.

[0033] 2(b), at this time, the light-receiving region RC of the light-receiving unit 32 includes an irradiation region IR where the laser light LR is received and a light-shielded region SH where the laser light LR is not received. The control unit 50 identifies the position of the outer edge of the wafer W based on the X-direction width Dir of the irradiation region IR relative to the X-direction width Drc of the light-receiving region RC, that is, the X-direction width of the laser light LR received by the light-receiving unit 32.

[0034] More specifically, the control unit 50 can calculate the position in the X direction of the outer edge of the wafer W relative to the detection unit 30 from the width in the X direction of the laser light LR received by the light receiving unit 32.

[0035] The positional relationship between the rotation support part 11 below the wafer W and the detection part 30 is fixed within the substrate processing apparatus 1, and the position of the detection part 30 in the X direction relative to the rotation support part 11 is known. The diameter of the wafer W is also known, and the distance from the outer edge of the wafer W to the center position corresponds to the radius of the wafer W.

[0036] Therefore, the control unit 50 can calculate the central position of the wafer W in the plane relative to the rotation axis of the rotation support unit 11 from the position in the X direction of the outer edge of the wafer W relative to the detection unit 30. At this time, by detecting the outer edge of the wafer W at multiple locations, for example, three or more locations, in the circumferential direction of the wafer W, the central position of the wafer W in the plane relative to the rotation axis of the rotation support unit 11 can be calculated more precisely.

[0037] As described above, in the initial state before the start of the chemical discharge process, for example, the center position of substrate holding part 12 in the surface direction of wafer W exists on the line connecting chemical nozzle 21 and detection part 30. Therefore, the width in the X direction of laser light LR received by light receiving part 32 corresponds to the width of laser light LR in the direction toward the center position of substrate holding part 12.

[0038] Fig. 3 is a diagram showing an example of the configuration of the lock mechanism 14 included in the substrate processing apparatus 1 according to the embodiment. Fig. 3(a) is a cross-sectional view along the X direction of the wafer W placed on the substrate holding part 12. Fig. 3(b) is a perspective top view of the wafer W placed on the substrate holding part 12.

[0039] 3, the X direction as the first direction and the Y direction as the second direction are both directions along the surface of the wafer W and are perpendicular to each other. As described above, for example, the direction connecting the chemical liquid nozzle 21 and the detection unit 30 can be the X direction.

[0040] 3, the substrate holding part 12 has, for example, a circular shape similar to the wafer W. It is preferable that the diameter of the mounting surface of the substrate holding part 12 is designed to be as large as possible. This makes it possible to suppress bending of the wafer W held by the substrate holding part 12.

[0041] However, the diameter of the mounting surface of the substrate holding part 12 is set to be smaller than the diameter of the wafer W. In other words, the area of ​​the mounting surface of the substrate holding part 12 is smaller than the area of ​​the upper surface of the wafer W, which is the surface onto which the chemical liquid is discharged. This makes it possible to prevent the chemical liquid from adhering to the mounting surface and to smoothly shake off excess chemical liquid from the outer edge of the wafer W.

[0042] The drive unit 13 is fixed to the rotation support unit 11 and is arranged in a crisscross pattern at the connection between the substrate holding unit 12 and the rotation support unit 11, and drives the substrate holding unit 12 at least in the X direction and Y direction by a stepping motor or the like not shown.

[0043] That is, the driving unit 13 includes a pair of members extending in the X direction and the Y direction, respectively. These members are combined in a crisscross pattern, and the substrate holding unit 12 is driven in the X direction and the Y direction along these members.

[0044] However, the drive unit 13 may be capable of moving the position of the substrate holder 12 in the circumferential direction of the wafer W in addition to the X and Y directions.

[0045] The amount of drive by the drive unit 13 may be within 1 mm in each of the X and Y directions. Since the drive by the drive unit 13 is performed by, for example, a stepping motor, the substrate holding unit 12 can be driven with high precision in units of 1 mm or less.

[0046] With this configuration, it is possible to move the position of the substrate holding part 12 relative to the rotation support part 11. Furthermore, along with the movement of the substrate holding part 12, it is possible to move the in-plane center position of the wafer W held by the substrate holding part 12 relative to the rotation axis of the rotation support part 11.

[0047] The locking mechanism 14 includes two systems of vacuum chucks 14w and 14d. The vacuum chuck 14w fixes the position of the wafer W in a planar direction relative to the substrate holding part 12. The vacuum chuck 14d fixes the position of the substrate holding part 12 in a planar direction of the wafer W relative to the rotation support part 11.

[0048] More specifically, the vacuum chuck 14w serving as the first locking mechanism extends, for example, on the rotation axis of the rotation support 11, penetrating the substrate holding part 12 from the rotation support 11 to the back surface of the wafer W. The vacuum chuck 14w is configured as a first suction mechanism that suctions the back surface of the wafer W by a pump (not shown), thereby suctioning the wafer W to the substrate holding part 12.

[0049] The vacuum chuck 14w extending from the rotation support part 11 to the substrate holding part 12 has flexibility at a connection part between the rotation support part 11 and the substrate holding part 12. In other words, the part of the vacuum chuck 14w extending from the rotation support part 11 to the substrate holding part 12 is configured as, for example, a flexible resin tube.

[0050] Vacuum chuck 14d as a second locking mechanism passes through drive unit 13 from rotation support unit 11 and extends to the rear surface of substrate holding unit 12. In rotation support unit 11, vacuum chuck 14d extends, for example, on the rotation axis. In the example of Fig. 3, the upper end of vacuum chuck 14d reaches the intersection of the members of drive unit 13 that extend in the X direction and the Y direction.

[0051] The vacuum chuck 14d is configured as a second suction mechanism that suctions the back surface of the substrate holding portion 12 with a pump (not shown) to thereby suction the substrate holding portion 12 to the driving portion 13.

[0052] As described above, the position of the driving unit 13 is fixed with respect to the rotation support unit 11. Therefore, the position of the substrate holding unit 12 is fixed with respect to the rotation support unit 11 by adsorbing the substrate holding unit 12 to the driving unit 13 with the vacuum chuck 14d.

[0053] When processing the wafer W in the substrate processing apparatus 1, the control unit 50 appropriately locks and unlocks the wafer W to the substrate holding unit 12 using the vacuum chuck 14w, and locks and unlocks the substrate holding unit 12 to the drive unit 13 and the rotation support unit 11 using the vacuum chuck 14d at predetermined timing.

[0054] (Method of manufacturing a semiconductor device) Next, a method for manufacturing a semiconductor device according to an embodiment will be described with reference to Figures 4 and 5. The method for manufacturing a semiconductor device according to an embodiment includes a process for discharging a chemical liquid onto the outer edge of a wafer W in a substrate processing apparatus 1. In the substrate processing apparatus 1, a position correction process is performed to align the central position within the surface of the wafer W with the rotation axis of a rotation support part 11 prior to the process for discharging the chemical liquid.

[0055] Fig. 4 is a diagram showing an example of a procedure for correcting the position of the wafer W in the substrate processing apparatus 1 according to the embodiment. Fig. 4(Aa) to (Ad) are cross-sectional views along the X direction of the wafer W placed on the substrate holding part 12. Fig. 4(Ba) to (Bd) correspond to Fig. 4(Aa) to (Ad), respectively, and are perspective top views of the wafer W placed on the substrate holding part 12.

[0056] 4(Aa) and 4(Ba), a wafer W is carried into the substrate processing apparatus 1 and placed on the substrate holder 12. In the example of Fig. 4(Aa) and 4(Ba), the wafer W is placed with its in-plane center position Cw shifted in the X and Y directions with respect to the rotation axis Cr of the rotation support 11.

[0057] More specifically, the center position Cw of the wafer W in its plane is shifted toward the left of the paper in the X direction, that is, toward the detection unit 30 at a position between the detection unit 30 and the chemical liquid nozzle 21. The center position Cw of the wafer W in its plane is also shifted toward the top of the paper in the Y direction. However, the actual amount of shift of the wafer W when it is carried in is very small, for example, 1 mm or less.

[0058] When the wafer W is loaded, the drive unit 13 is in the initial position, and the center position of the substrate holder 12 in the surface direction of the wafer W and the rotation axis Cr of the rotation support unit 11 coincide with each other.

[0059] As shown in Figures 4(Ab) and (Bb), the control unit 50 causes the detection unit 30 to detect the outer edge of the wafer W while locking the relative positions of the wafer W, the substrate holding unit 12, the drive unit 13, and the rotation support unit 11.

[0060] That is, the control unit 50 causes the vacuum chuck 14w to adsorb the back surface of the wafer W to the substrate holding unit 12, and fixes the position of the wafer W in the surface direction relative to the substrate holding unit 12. The control unit 50 also causes the vacuum chuck 14d to adsorb the back surface of the substrate holding unit 12 to the drive unit 13, and fixes the position of the substrate holding unit 12 in the surface direction of the wafer W relative to the drive unit 13 and the rotation support unit 11.

[0061] In addition, while fixing the relative positions of the wafer W, substrate holding part 12, drive part 13, and rotation support part 11, the control part 50 rotates the wafer W held by the substrate holding part 12 at a low speed, for example, by the rotation support part 11, while causing the detection part 30 to detect the position of the outer edge of the wafer W at multiple points around the circumference of the wafer W.

[0062] Based on the position of the outer edge of the wafer W detected by the detector 30, the controller 50 calculates the in-plane center position Cw of the wafer W relative to the rotation axis Cr of the rotation support 11 at least in the X and Y directions.

[0063] 4(Ab) and (Bb), the control unit 50 calculates the central position Cw in the X direction of the wafer W as a value shifted toward the left side of the paper surface with respect to the rotation axis Cr of the rotation support 11. The control unit 50 also calculates the central position Cw in the Y direction of the wafer W as a value shifted toward the top of the paper surface with respect to the rotation axis Cr of the rotation support 11.

[0064] As shown in Figures 4(Ac) and (Bc), the control unit 50 unlocks the substrate holding unit 12 and then drives the substrate holding unit 12 using the drive unit 13 to align the central position Cw of the wafer W in the plane with the rotation axis Cr of the rotation support unit 11.

[0065] That is, the control unit 50 stops the suction of the back surface of the substrate holding unit 12 to the drive unit 13 by the vacuum chuck 14d, and releases the fixed position of the substrate holding unit 12 with respect to the drive unit 13 and the rotation support unit 11. The control unit 50 also causes the vacuum chuck 14w to continue suctioning the back surface of the wafer W to the substrate holding unit 12, thereby maintaining the state in which the wafer W is fixed to the substrate holding unit 12.

[0066] This allows the substrate holding part 12 to be freely moved in the surface direction of the wafer W with respect to the driving part 13 and the rotation support part 11. Meanwhile, the relative position of the wafer W held by the substrate holding part 12 with respect to the substrate holding part 12 can be kept fixed.

[0067] In addition, based on the calculation result of the central position Cw of the wafer W relative to the rotation axis Cr of the rotation support part 11, the control part 50 drives the substrate holding part 12 by the drive part 13 in the surface direction of the wafer W so that the central position Cw of the wafer W coincides with the rotation axis Cr of the rotation support part 11.

[0068] In this manner, the driving unit 13 moves the wafer W held by the substrate holding unit 12 together with the substrate holding unit 12 without changing the relative position between the substrate holding unit 12 and the wafer W. As a result, the central position Cw within the surface of the wafer W and the rotation axis Cr of the rotation support unit 11 become approximately aligned.

[0069] At this time, the center position of the substrate holding part 12 in the surface direction of the wafer W moves to a position shifted in the X direction and the Y direction from the rotation axis Cr of the rotation support part 11. On the other hand, the vacuum chuck 14w has flexibility at the connection position between the rotation support part 11 and the substrate holding part 12.

[0070] As a result, after the vacuum chuck 14w penetrates the rotation support part 11 on the rotation axis Cr, it bends to follow the substrate holding part 12, whose center position has shifted from the rotation axis Cr, and penetrates the substrate holding part 12 to reach the back surface of the wafer W.

[0071] 4(Ad) and (Bd), the control unit 50 again starts suction of the back surface of the substrate holding unit 12 to the driving unit 13 by the vacuum chuck 14d. As a result, the position of the substrate holding unit 12 is fixed with respect to the rotation support unit 11 with the in-plane center position Cw of the wafer W and the rotation axis Cr of the rotation support unit 11 approximately coinciding with each other.

[0072] Thereafter, while maintaining a state in which the central position Cw of the wafer W in its plane is substantially aligned with the rotation axis Cr of the rotation support 11, the substrate processing apparatus 1 performs a process of discharging the chemical onto the wafer W. After the chemical is discharged, the wafer W is rotated for a predetermined time, and a spin-drying process is performed to dry the chemical discharged onto the wafer W.

[0073] FIG. 5 is a schematic diagram of a wafer W processed by the substrate processing apparatus 1 according to the embodiment.

[0074] Fig. 5(Aa) is a top view of a wafer W that has been subjected to a process for forming a ring-shaped film LY, and Fig. 5(Ab) is a cross-sectional view in the X direction of the wafer W in Fig. 5(Aa). Fig. 5(Ba) is a top view of a wafer W that has been subjected to a process for exposing the outer edge, and Fig. 5(Bb) is a cross-sectional view in the X direction of the wafer W in Fig. 5(Ba).

[0075] 5(Aa) and 5(Ab) show the positional relationship between the wafer W and the substrate holding part 12 and the rotation support part 11 during the chemical liquid discharge process, as well as the in-plane center position Cw of the wafer W and the rotation axis Cr of the rotation support part 11. In the example of Fig. 5, the wafer W is processed in a state in which the in-plane center position Cw of the wafer W is aligned with the rotation axis Cr of the rotation support part 11.

[0076] 5(Aa) and 5(Ab), for example, when a raw material liquid is discharged from the chemical liquid nozzle 21, a ring-shaped film LY is formed with a predetermined width on the outer edge of the wafer W. Since the raw material liquid is discharged from the chemical liquid nozzle 21 to the outer edge of the wafer W with the central position Cw within the surface of the wafer W and the rotation axis Cr of the rotation support part 11 approximately coinciding with each other, a film LY having an approximately uniform width is formed.

[0077] Such an annular film LY is used, for example, as a protective film for the outer edge of the wafer W. That is, for example, when etching or the like is performed on the wafer W later, the film LY prevents the outer edge of the wafer W from being etched.

[0078] 5(Ba) and 5(Bb), for example, when a removing liquid is discharged from chemical nozzle 21, for example, a film LY formed on the entire surface of wafer W is removed from the outer edge of wafer W, and an exposed portion EX is formed in which the upper surface of wafer W is exposed with a predetermined width. Since the removing liquid is discharged from chemical nozzle 21 to the outer edge of wafer W with center position Cw of wafer W in the plane approximately aligned with rotation axis Cr of rotation support 11, exposed portion EX has an approximately uniform width.

[0079] Such a process is performed to suppress particles and the like on the outer edge of the wafer W. That is, by removing the film LY from the outer edge of the wafer W, it is possible to suppress the film LY on the outer edge from peeling off and becoming a particle source, for example, during handling of the wafer W.

[0080] In addition, various kinds of films can be applied as the film LY shown in Fig. 5. The film LY may be, for example, a resist film, a resin film such as a SOC (Spin On Carbon) film or a CVD (Chemical Vapor Deposition) carbon film, or an inorganic film such as a SOG (Spin On Glass) film.

[0081] After this, various processes are performed on the wafer W to manufacture the semiconductor device of the embodiment.

[0082] (Comparative Example) In the manufacturing process of a semiconductor device, a process is sometimes performed in which a chemical solution is discharged onto the outer edge of a wafer to form a ring-shaped film or expose the outer edge of the wafer. The chemical solution discharge process is performed while the wafer is rotating. However, due to a misalignment during transportation or the like, the wafer may be loaded into the substrate processing apparatus in a state in which the center position within the wafer surface does not coincide with the rotation axis when the wafer is rotated.

[0083] 6 shows an example of a wafer Wz that has been processed in a state in which the center position Cw of the wafer Wz is misaligned with the rotation axis Cr, and is a schematic diagram of a wafer Wz that has been processed by a substrate processing apparatus according to a comparative example.

[0084] The substrate processing apparatus of the comparative example does not include a mechanism for correcting the position of the wafer Wz in the substrate holding unit 12z and the rotation support unit 11z, etc. Therefore, in the substrate processing apparatus of the comparative example, the chemical solution is discharged in a state where the center position Cw of the wafer Wz is misaligned with the rotation axis Cr.

[0085] That is, in the substrate processing apparatus of the comparative example, when the wafer Wz is rotated, the wafer Wz is in an eccentric state with respect to the rotation axis Cr, and as a result, the position of the outer edge of the wafer Wz passing under the chemical nozzle changes with the rotation of the wafer Wz, causing a change in the discharge width of the chemical liquid at the outer edge of the wafer Wz.

[0086] 6(Aa) and 6(Ab), for example, when a raw material liquid is discharged from a chemical nozzle, a ring-shaped film LYz is formed on the outer edge of the wafer Wz. However, because the center position Cw of the wafer Wz is misaligned with the rotation axis Cr, the discharge width of the raw material liquid varies, and the width of the formed film LYz also varies.

[0087] 6(Ba) and 6(Bb), for example, when a removing liquid is discharged from a chemical nozzle, the film LYz formed on the entire surface of the wafer Wz is removed from the outer edge of the wafer Wz, and an exposed portion EXz is formed where the top surface of the wafer Wz is exposed. However, because the center position Cw of the wafer Wz is misaligned with the rotation axis Cr, the discharge width of the removing liquid fluctuates, and the width of the exposed portion EXz also varies.

[0088] When the center position Cw of the wafer Wz is misaligned with the rotation axis Cr, it is possible to take measures such as re-transporting the wafer Wz and re-placing the wafer Wz on the substrate holder 12z in order to prevent the above-mentioned processing failure. However, in this case, the processing time of the wafer Wz may be extended by the re-transporting, and the throughput of the substrate processing apparatus may be reduced.

[0089] According to the embodiment of the substrate processing apparatus 1, based on the position of the outer edge of the wafer W detected by the detection unit 30, the drive unit 13 drives the substrate holding unit 12 so that the center position within the surface of the wafer W held by the substrate holding unit 12 coincides with the rotation axis of the rotation support unit 11.

[0090] This makes it possible to suppress variations in the width of the film LY formed on the outer edge of the wafer W and in the exposed width of the outer edge of the wafer W. In addition, since the driving target of the driving unit 13 is the substrate holding unit 12 and the position of the wafer W is corrected before processing the wafer W, no large-scale mechanism is required and it is possible to suppress an increase in the size of the substrate processing apparatus 1. In addition, since there is no need to re-transport the wafer W, for example, the throughput of the substrate processing apparatus 1 can be improved.

[0091] According to the embodiment of the substrate processing apparatus 1, two locking mechanisms 14 are provided: a vacuum chuck 14w that fixes the position of the wafer in a planar direction relative to the substrate holding portion 12, and a vacuum chuck 14d that fixes the position of the substrate holding portion 12 in a planar direction of the wafer W relative to the rotation support portion 11.

[0092] This allows the relative positions of the wafer W, substrate holding part 12, and rotation support part 11 to be fixed or released as appropriate during each of the processes of detecting the outer edge of the wafer W, correcting the position of the wafer W, and discharging the chemical liquid.

[0093] According to the substrate processing apparatus 1 of the embodiment, the vacuum chuck 14w has flexibility at the connection portion between the rotation support 11 and the substrate holding part 12. As a result, even if the relative position of the substrate holding part 12 with respect to the rotation support 11 changes due to a position correction process of the wafer W, the wafer W can be adsorbed to the substrate holding part 12.

[0094] According to the substrate processing apparatus 1 of the embodiment, when the outer edge of the wafer W is detected by the detection unit 30, the position of the wafer W is fixed with respect to the substrate holding unit 12 by the vacuum chuck 14w, and the position of the substrate holding unit 12 is fixed with respect to the rotation support unit 11 by the vacuum chuck 14d. This makes it possible to suppress the position of the wafer W from fluctuating during the detection process, and to identify the in-plane center position of the outer edge of the wafer W with high accuracy.

[0095] According to the substrate processing apparatus 1 of the embodiment, when the driving unit 13 aligns the in-plane center position of the wafer W with the rotation axis of the rotation support unit 11, the position of the wafer W is fixed with respect to the substrate holding unit 12 by the vacuum chuck 14w, and the lock by the vacuum chuck 14d is released to not fix the position of the substrate holding unit 12 with respect to the rotation support unit 11. This makes it possible to precisely correct the position of the wafer W while maintaining the relative position between the wafer W and the substrate holding unit 12.

[0096] According to the substrate processing apparatus 1 of the embodiment, when the chemical liquid is discharged from the chemical liquid nozzle 21 to the outer edge portion of the wafer W, the position of the wafer W is fixed with respect to the substrate holding part 12 by the vacuum chuck 14w, and the position of the substrate holding part 12 is fixed with respect to the rotation support part 11 by the vacuum chuck 14d. This allows the discharge process of the chemical liquid to be performed with the wafer W fixed at the corrected position.

[0097] According to the substrate processing apparatus 1 of the embodiment, the outer edge of the wafer W is detected over a plurality of points in the circumferential direction by the detection unit 30, and the drive unit 13 aligns the in-plane center position of the wafer W with the rotation axis of the rotation support unit 11 based on the circumferential positions of the plurality of points of the outer edge of the wafer W detected by the detection unit 30. This makes it possible to calculate the in-plane center position of the wafer W more precisely, and to perform position correction of the wafer W with high accuracy.

[0098] (Modification) Next, a substrate processing apparatus 1a according to a first modification of the embodiment will be described with reference to Figures 7 and 8. The substrate processing apparatus 1a according to the first modification differs from the first embodiment in that it includes a detection unit 30a configured as an imaging device.

[0099] Fig. 7 is a diagram showing an example of the configuration of a substrate processing apparatus 1a according to Modification 1 of the embodiment. In Fig. 7, the same components as those in the above-described embodiment are denoted by the same reference numerals, and the description thereof will be omitted.

[0100] As shown in FIG. 7, the substrate processing apparatus 1a includes a detector 30a disposed above the outer edge of the wafer W, and a controller 50a that controls the detector 30a.

[0101] More specifically, detection unit 30a is provided above wafer W at a position spaced apart from chemical nozzle 21 in the circumferential direction of wafer W. In the example of Fig. 7, detection unit 30 is disposed at a position spaced apart from chemical nozzle 21 in the circumferential direction of wafer W by 180°, that is, at a position spaced apart from chemical nozzle 21 in the X direction with substrate holder 12, drive unit 13, rotation support unit 11, etc., therebetween.

[0102] The detector 30a serving as an imaging device is, for example, an image sensor such as a charge coupled device (CCD) or a complementary metal oxide semiconductor (CMOS). The detector 30a captures an image of the outer edge of the wafer W from above the wafer W, for example.

[0103] The control unit 50a controls the detection unit 30a to capture an image including the outer edge of the wafer W. Other configurations of the control unit 50a are similar to those of the control unit 50 in the above-described embodiment.

[0104] FIG. 8 is a diagram showing an example of a method for detecting the outer edge of a wafer W by a detector 30a included in a substrate processing apparatus 1a according to a modified example of the embodiment.

[0105] 8(a), when detecting the outer edge of the wafer W, the control unit 50a acquires an image of the outer edge of the wafer W by the detection unit 30a from above the wafer W placed on the substrate holding unit 12. High resolution can be obtained by narrowing the angle of view of the detection unit 30a mainly to the outer edge of the wafer W when imaging.

[0106] 8(b), the captured image 30im captured by the detection unit 30a includes the wafer W occupying a predetermined area in the captured image 30im depending on the placement position of the wafer W on the substrate holding unit 12. The control unit 50a identifies the position of the outer edge of the wafer W based on the X-direction width Dwf of the wafer W relative to the X-direction width Dim of the captured image 30im, that is, the width of the wafer W in the direction toward the center position of the surface direction of the substrate holding unit 12.

[0107] More specifically, the control unit 50 calculates the position in the X direction of the outer edge of the wafer W relative to the detection unit 30 from the width Dwf in the X direction of the wafer W. Furthermore, the control unit 50a calculates the center position in the plane of the wafer W relative to the rotation axis of the rotation support unit 11 from the position in the X direction of the outer edge of the wafer W relative to the detection unit 30a.

[0108] At this time, by detecting the outer edge of the wafer W at multiple locations around the circumference of the wafer W, for example, three or more locations, the central position of the wafer W within the plane relative to the rotation axis of the rotation support part 11 can be calculated more precisely.

[0109] The substrate processing apparatus 1a of this modification provides the same effects as those of the substrate processing apparatus 1 of the above-described embodiment.

[0110] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0111] 1, 1a...substrate processing apparatus, 11...rotation support section, 12...substrate holding section, 13...driving section, 14...locking mechanism, 14d, 14w...vacuum chuck, 21...chemical nozzle, 30, 30a...detecting section, 31...light projecting section, 32...light receiving section, LY...film, 50, 50a...control section, W...wafer.

Claims

1. A substrate holder for holding a substrate; a rotation support section that supports the substrate holding section and rotates the substrate held by the substrate holding section in a circumferential direction; a drive unit that drives the substrate holding unit in a surface direction of the substrate relative to the rotation support unit; a detection unit that detects an outer edge of the substrate held by the substrate holding unit; a chemical solution discharger that discharges a chemical solution onto the outer edge portion held by the substrate holder; a locking mechanism that fixes a position of the substrate relative to the substrate holding part in the planar direction and fixes a position of the substrate holding part in the planar direction relative to the rotation support part; and a control unit that drives the substrate holding unit using the drive unit so that a center position in a plane of the substrate held by the substrate holding unit coincides with a rotation axis of the rotation support unit based on the position of the outer edge portion detected by the detection unit. Substrate processing equipment.

2. The locking mechanism includes: a first locking mechanism that fixes a position of the substrate relative to the substrate holder in the planar direction; a second locking mechanism that fixes a position of the substrate holding part relative to the rotation support part in the planar direction. The substrate processing apparatus according to claim 1 .

3. The drug solution discharge unit is Discharging at least one of a removing liquid for removing the film formed on the substrate from the outer edge portion and a raw material liquid serving as a raw material for the film to be formed on the outer edge portion; The substrate processing apparatus according to claim 1 or 2.

4. a substrate holder supported by a rotation support that rotates the substrate in a circumferential direction; Detecting an outer edge of the substrate held by the substrate holder; driving the substrate holding part in a surface direction of the substrate relative to the rotation support part so that a center position in a surface of the substrate held by the substrate holding part coincides with a rotation axis of the rotation support part based on the detected position of the outer edge part; A chemical solution is discharged onto the outer edge of the substrate held by the substrate holder; when detecting the outer edge portion and when discharging the chemical solution onto the outer edge portion, a position of the substrate is fixed in the planar direction with respect to the substrate holding part, and a position of the substrate holding part is fixed in the planar direction with respect to the rotation support part. A method for manufacturing a semiconductor device.

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