Amorphous phase modification device and method for processing single crystal material

Abstract

To provide an effective laser light application method, which reduces a thickness of a modified layer to tens of microns or less, and a single crystal material processing method that effectively produces the modified layer.SOLUTION: A processing method of a single crystal material includes following steps. A single crystal material is provided as an object to be modified. An amorphous phase modification apparatus is used for emitting a femtosecond laser beam to process an internal portion of the object to be modified. The processing includes using the femtosecond laser beam to form a plurality of processing lines in an internal portion of the object to be modified; each of the processing lines include zigzag pattern processing; a processing line spacing between the plurality of processing lines is in a range of 200 μm to 600 μm; and after the object to be modified is processed, a modified layer is formed in the object to be modified. The method further includes slicing or separating out a portion in the object to be modified that includes the modified layer.SELECTED DRAWING: Figure 4A

Description

[Technical field]

[0001] The present invention relates to an amorphous phase modifying apparatus, and more particularly to an amorphous phase modifying apparatus and a method for processing a single crystal material using the same. [Background technology]

[0002] In single crystal materials, silicon carbide is a notable example that has high industrial application value and is relatively difficult to cut mechanically. Silicon carbide single crystal wafers can be used to manufacture transistors, and can be used in fields such as electric vehicles and power conversion because they can be used properly under high temperature and high voltage. As far as the prior art is concerned, diamond wires are commonly used to cut silicon carbide ingots to obtain wafers. However, the kerf loss of the cut line by this method is relatively large, and a kerf loss of the cut line of 150 microns to 300 microns is commonly observed.

[0003] In addition, the conventional method tries to use a pulsed laser to modify the inside of single crystal silicon or sapphire, and the wavelength of the laser light can partially penetrate the material. After modification by laser light, the modified layer is no longer the original single crystal structure, so its bond strength is greatly reduced compared to the single crystal material. Therefore, a part of the single crystal material can be sliced ​​or separated after applying an external force. However, the conventional laser light is prone to making the modified layer have an excessive thickness, and thus the advantage of reducing the kerf loss of the cutting line when using laser light for modification is lost.

[0004] Currently, there is a lack of an effective laser beam application method that can reduce the thickness of the modified layer to tens of microns or less, and a single crystal material processing method that can effectively generate the modified layer. Therefore, there is an urgent need for a single crystal material processing method that solves the above problems. Summary of the Invention [Problem to be solved by the invention]

[0005] There is a lack of effective laser light application methods that reduce the thickness of the modified layer to tens of microns or less to reduce kerf loss in the cut line, and single crystal material processing methods that effectively produce the modified layer. [Means for solving the problem]

[0006] The present invention provides an amorphous phase modification apparatus and a method for processing a single crystal material, which can effectively generate a modified layer and reduce the thickness of the modified layer.

[0007] In some embodiments of the present invention, an amorphous phase modification apparatus can be used to form an amorphous phase modification layer. The amorphous phase modification apparatus includes a femtosecond laser source, a speckle adjuster, a beam angle scanner, a focusing objective lens, and a motion module. The femtosecond laser source is used to emit a laser beam. The speckle adjuster is used to adjust the speckle size of the laser beam emitted by the femtosecond laser source. The beam angle scanner is used to adjust the angle of the laser beam received from the speckle adjuster, and the beam angle scanner performs a small angle scan with a motion frequency of 10 Hz to 10,000 Hz. The focusing objective lens is used to receive the laser beam that has passed through the beam angle scanner and focus the laser beam. The motion module is used to mount an object to be modified, allowing the object to be modified to receive the laser beam that has passed through the focusing objective lens.

[0008] In one embodiment of the present invention, the wavelength of the laser beam emitted by the femtosecond laser source is between 800 nm and 1600 nm.

[0009] In one embodiment of the present invention, the wavelength of the laser beam emitted by the femtosecond laser source is between 1020 nm and 1080 nm.

[0010] In one embodiment of the invention, the beam angle scanner has a single axis of rotation.

[0011] In one embodiment of the invention, the small angle is between 0.01 radians and 0.05 radians.

[0012] In one embodiment of the invention, the beam angle scanner is a resonant scanner, a piezoelectric material driven lens, or an acousto-optic modulator.

[0013] In one embodiment of the present invention, the pulse repetition rate of the laser beam emitted by the femtosecond laser source is in the range of 100 kHz to 10 MHz, the pulse width is in the range of 300 femtoseconds to 2000 femtoseconds, and the pulse energy is in the range of 1 microjoule to 30 microjoule.

[0014] In one embodiment of the invention, the pulse repetition rate of the laser beam emitted by the femtosecond laser source is in the range of 500 kHz to 1000 kHz, and the pulse width is in the range of 1000 femtoseconds to 2000 femtoseconds.

[0015] In one embodiment of the present invention, the speckle quality (M 2 ) is in the range of 1.0 to 1.4.

[0016] In one embodiment of the invention, the beam angle scanner performs small angle scanning with a motion frequency of 100 Hz to 800 Hz.

[0017] A method for processing a single crystal material according to an embodiment of the present invention includes the following steps: provide a single crystal material as an object to be modified; use an amorphous phase modification apparatus to emit a femtosecond laser beam to process the inside of the object to be modified; the processing includes using the femtosecond laser beam to form a plurality of processing lines inside the object to be modified, each processing line includes a zigzag pattern processing, and a processing line spacing between the plurality of processing lines is in the range of 200 μm to 600 μm, and after the object to be modified is processed, a modified layer is formed in the object to be modified; and slice or separate a portion of the object to be modified that includes the modified layer.

[0018] In one embodiment of the invention, machining includes using a femtosecond laser beam to machine along the edge of the object to be modified.

[0019] In one embodiment of the present invention, using a femtosecond laser beam to process the interior of an object to be modified is carried out by processing in a flat-cut mode perpendicular to the crystal axis direction of a single crystal material.

[0020] In one embodiment of the present invention, the number of times each of the plurality of processed lines is processed ranges from 2 to 10 times.

[0021] In one embodiment of the present invention, the number of times each of the plurality of processed lines is processed ranges from 2 to 6.

[0022] In one embodiment of the invention, the internal processing of the object to be modified is carried out with a galvanometer amplitude of 0.02 microns to 0.08 microns.

[0023] In one embodiment of the present invention, each of the multiple processing lines is processed using a femtosecond laser beam at a processing speed of 5 mm per second to 20 mm per second to process the inside of the object to be modified.

[0024] In one embodiment of the present invention, each of the multiple processing lines is processed using a femtosecond laser beam with a processing power of 3W to 8.5W to process the inside of the object to be modified.

[0025] In one embodiment of the present invention, using a femtosecond laser beam to form multiple processing lines inside the object to be modified is carried out by processing the entire inside of the object to be modified in a non-jointed manner.

[0026] In one embodiment of the present invention, using a femtosecond laser beam to form multiple processing lines within the object to be modified is performed in a stitching manner, by processing a first portion of the interior of the object to be modified followed by processing a second portion of the interior of the object to be modified. Effect of the Invention

[0027] Based on the above, the amorphous phase modification apparatus and the method for processing a single crystal material according to the embodiment of the present invention can effectively generate a modified layer while reducing the thickness of the modified layer, so that the thickness of the modified layer can be smaller than the kerf loss of the cutting line caused by mechanical cutting, and the modified layer can be easily separated after applying an external force. [Brief description of the drawings]

[0028] [Figure 1] FIG. 1 is a schematic diagram of an amorphous phase reformer according to one embodiment of the present invention. [Diagram 2] FIG. 2 is a schematic diagram of an amorphous phase reformer during operation according to one embodiment of the present invention. [Diagram 3] FIG. 1 is a schematic diagram of a method for processing single crystal material according to one embodiment of the present invention. [Figure 4A] FIG. 1 is a schematic diagram of a method for processing single crystal material according to one embodiment of the present invention. [Figure 4B] FIG. 1 is a schematic diagram of a method for processing single crystal material according to one embodiment of the present invention. [Diagram 5] FIG. 1 is a schematic diagram of a method for processing single crystal material according to one embodiment of the present invention. [Figure 6] FIG. 1 is a schematic diagram of a method for processing single crystal material according to one embodiment of the present invention. [Figure 7A] 4 is an optical microscope image after forming a modified layer according to one embodiment of the present invention. [Figure 7B] 13 is an optical microscope image in which a modified layer is not formed by a processing method in a comparative example of the present invention. [Figure 8A] FIG. 2 is a schematic diagram of a method for processing a single crystal material according to another embodiment of the present invention. [Figure 8B] FIG. 2 is a schematic diagram of a method for processing a single crystal material according to another embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0029] FIG. 1 is a schematic diagram of an amorphous phase modification apparatus according to one embodiment of the present invention. The amorphous phase modification apparatus of the embodiment of the present invention can be used to form an amorphous phase modification layer in a single crystal material. Referring to FIG. 1, the amorphous phase modification apparatus includes a femtosecond laser source 10, a speckle adjuster 20, a beam angle scanner 30, a focusing objective lens 40, and a motion module 50. As shown in FIG. 1, the femtosecond laser source 10 can be used to emit a laser beam L1. In an embodiment of the present invention, the wavelength of the laser beam L1 emitted by the femtosecond laser source 10 is a wavelength that can penetrate the object S1 to be modified (the single crystal material to be modified). For example, when the object S1 to be modified is silicon carbide, the wavelength of the laser beam L1 is in the range of 800 nm to 1600 nm. In some embodiments, the wavelength of the laser beam L1 is in the range of 1020 nm to 1080 nm. Additionally, in some embodiments of the present invention, femtosecond laser source 10 is constructed using transparent glass or crystal with a suitable laser gain material, such as doped ytterbium.

[0030] In one exemplary embodiment, the pulse repetition rate of the laser beam L1 emitted by the femtosecond laser source 10 is in the range of 100 kHz to 10 MHz, the pulse width is 300 femtoseconds to 2000 femtoseconds, and the pulse energy is 1 microjoule to 30 microjoules. In a particular embodiment, the pulse repetition rate of the laser beam L1 emitted by the femtosecond laser source 10 is in the range of 500 kHz to 1000 kHz, and the pulse width is 1000 femtoseconds to 2000 femtoseconds. In addition, the femtosecond laser source 10 of the embodiment of the present invention should include a means for adjusting its output power by receiving an external voltage signal or command.

[0031] As shown in FIG. 1, the speckle adjuster 20 is used to adjust the speckle size of the laser beam L1 emitted by the femtosecond laser source 10. In some embodiments, the speckle adjuster 20 is used to enlarge the speckle size of the femtosecond laser source 10 to achieve the function of a very small focus after focusing. Due to the high energy density at the focus, the energy density drops sharply when moving a short distance from the focus. Therefore, when modification is performed under the above conditions, it has the effect of having a small distribution of the modified area in the vertical direction. In some embodiments of the present invention, the speckle quality (M 2 ) is in the range of 1.0 to 1.4.

[0032] Referring to FIG. 1, the beam angle scanner 30 is used to adjust the angle of the laser beam L2 received from the speckle adjuster 20. In some embodiments, the beam angle scanner 30 performs small angle scanning with a motion frequency of 10 Hz to 10,000 Hz. That is, the small angle can be scanned back and forth 100 to 1000 times per second. In some embodiments, the beam angle scanner 30 performs small angle scanning with a motion frequency of 100 Hz to 800 Hz. That is, the small angle can be scanned back and forth 100 to 800 times per second. In addition, the small angle is 0.01 radians to 0.05 radians, which is equivalent to scanning + / - 0.005 radians to + / - 0.025 radians.

[0033] In embodiments of the present invention, the beam angle scanner 30 can be implemented in different ways. For example, the beam angle scanner 30 can be a resonant scanner, a piezoelectric material driven lens, or an acousto-optic modulator. Additionally, in embodiments of the present invention, a difference between the beam angle scanner 30 and a conventional galvanometer scanner is that the beam angle scanner 30 only includes a single axis of rotation, although the present invention is not limited thereto. In some other embodiments, the beam angle scanner 30 may have two or more axes of rotation.

[0034] Further referring to FIG. 1, the focusing objective lens 40 is used to receive the laser beam L3 that has passed through the beam angle scanner 30, and is used to focus the laser beam L3. In addition, the motion module 50 is used to mount the object S1 to be modified, allowing the object S1 to be modified to receive the laser beam L4 that has passed through the focusing objective lens 40. As shown in FIG. 2, in one embodiment of the present invention, when the amorphous phase modification apparatus is in operation, the rotation axis of the beam angle scanner 30 is in the +Y direction, which is the incident paper direction. Therefore, when the beam angle scanner 30 rotates, the laser beam L3 is shifted in the X-axis direction. The shift of the laser beam L3' in the X-axis direction directly makes the shift direction of the focused laser beam L4' in the X-axis direction. Therefore, the movement direction of the motion module 50 must be perpendicular to the beam shift direction X-axis, which means moving in the Y-axis direction. In other words, in the embodiment of the present invention, it is a preferred setting that the scanning direction is perpendicular to the movement direction of the motion module 50. Under such conditions, the scanning area is maximized at a fixed scanning angle, and the amorphous modification effect of the laser can be most effective.

[0035] 3 to 6 are schematic diagrams of a method for processing a single crystal material according to one embodiment of the present invention. Referring to FIG. 3, in the method for processing a single crystal material according to some embodiments of the present invention, a single crystal material is provided as an object S1 to be modified. The single crystal material is, for example, a single crystal material made of silicon carbide. In some embodiments, the object S1 to be modified has a first surface 102A and a second surface 102B opposite to the first surface 102A. As shown in FIG. 3, the inside of the object S1 to be modified is processed from the first surface 102A by using a femtosecond laser beam L4 emitted from the amorphous phase modification apparatus shown in FIG. 1.

[0036] As shown in FIG. 4A and FIG. 4B, the femtosecond laser beam L4 is used to form a plurality of processing lines 104A inside the object S1 to be modified. In one embodiment of the present invention, the processing line spacing between the processing lines 104A is in the range of 200 μm to 600 μm. In some embodiments, the processing further includes using the femtosecond laser beam L4 to process along the edge of the object S1 to be modified to form processing lines 104B at the edge of the object S1 to be modified. It is worth noting that during the use of the modification device to process the object S1 to be modified, the faces 102A and 102B of the object S1 to be modified are not modified. Instead, it is the inside of the object S1 to be modified that is modified. For example, as shown in FIG. 6, only the layer 106 located inside the object S1 to be modified is modified, and the faces 102A and 102B are kept unmodified.

[0037] As shown in FIG. 4A, in some embodiments, using the femtosecond laser beam L4 to process the inside of the object S1 to be modified to form a plurality of processing lines 104A is performed by processing in a flat cut mode perpendicular to the crystal axis direction of the single crystal material. For example, in this embodiment, the plurality of processing lines 104A extend along the X-axis direction and are arranged parallel to the Y-axis direction. As shown in FIG. 4B, in some embodiments, using the femtosecond laser beam L4 to process the inside of the object S1 to be modified to form a plurality of processing lines 104A is performed by processing in a flat cut mode parallel to the crystal axis direction of the single crystal material. For example, in this embodiment, the plurality of processing lines 104A extend along the Y-axis direction and are arranged parallel to the X-axis direction. In other embodiments, the processing method can be processed in a direction corresponding to any other mark such as a flat cut, a notch, or in a direction of another mark corresponding to the crystal axis direction, and the present invention is not limited thereto.

[0038] In one exemplary embodiment, the number of times each of the plurality of processing lines 104A / 104B is processed ranges from 2 to 10 times. In some embodiments, the number of times each of the plurality of processing lines 104A / 104B is processed ranges from 2 to 6 times. If the number of times each of the plurality of processing lines 104A / 104B is processed is less than the above-mentioned range, the number of times is too small to effectively form a modified layer in the object S1 to be modified. If the number of times each of the plurality of processing lines 104A / 104B is processed is more than the above-mentioned range, the processing time is too long and uneconomical, and the thickness of the modified layer formed may be excessively thick.

[0039] As shown in FIG. 5, in some embodiments, the processing of each processing line 104A / 104B includes a zigzag pattern processing. For example, referring to FIG. 5, P1 is the starting point of the processing path, P2 is the turning point of the first path, P3 is the turning point of the second path, and the above zigzag pattern processing is repeated until the path end point P4 is reached. In the above embodiment, the distance between the starting point P1 and the turning point P2 in the X-axis direction is ΔX, which is determined by the scanning angle of the beam angle scanner 30. In other words, the distance ΔX is equal to f*Δθ, where f is the focal length of the focusing objective lens 40, and Δθ is the scanning angle of the beam angle scanner 30. In addition, the distance ΔY is determined by the moving speed of the motion module 50 and the oscillation frequency of the beam angle scanner 30. In other words, the distance ΔY is equal to the following formula:

number

[0040] In addition, in an embodiment of the present invention, the processing of each processing line 104A / 104B is performed by processing the inside of the object S1 to be modified with a galvanometer amplitude of 0.02 microns to 0.08 microns. In order to process the inside of the object S1 to be modified, each processing line 104A / 104B is processed using a femtosecond laser beam at a processing speed of 5 mm per second to 20 mm per second. In addition, in order to process the inside of the object S1 to be modified, each processing line 104A / 104B is processed using a femtosecond laser beam with a processing power of 3 W to 8.5 W. Furthermore, in order to process the inside of the object S1 to be modified, the first processing of each processing line 104A / 104B is performed using a femtosecond laser beam with a relatively low processing power of 3 W to 6 W. When the processing method for single crystal material in an embodiment of the present invention satisfies the above conditions, an ideal modified layer can be effectively formed.

[0041] As shown in FIG. 6, in an embodiment of the present invention, after processing the object S1 to be modified by using the laser beam L4, a modified layer 106 is formed inside (e.g., inside) the object S1 to be modified. For example, an optical microscope is used to determine whether the modified layer 106 is properly formed, for example, to determine whether there is a continuous crack CX1 between the processing lines 104A. In some embodiments, the thickness of the modified layer 106 formed is controlled within a range of 40 microns to 80 microns. FIG. 7A is an optical microscope image after forming a modified layer according to one embodiment of the present invention. FIG. 7B is an optical microscope image without forming a modified layer by a processing method in a comparative example of the present invention. As shown in FIG. 7A, if the continuous crack CX1 between the processing lines 104A is clearly seen with an optical microscope, it can be determined that the modified layer 106 is normally formed. Conversely, as shown in FIG. 7B, if no obvious continuous crack CX1 is seen with an optical microscope, it means that the object S1 to be modified is not normally modified. After the modified layer 106 is successfully formed using the processing method of the embodiment of the present invention, the portion of the object S1 to be modified having the modified layer 106 can be sliced ​​or separated. For example, if the object S1 to be modified is a silicon carbide ingot, an external force can be easily applied along the modified layer 106 to separate and obtain silicon carbide wafers.

[0042] 8A and 8B are schematic diagrams of a method for processing a single crystal material according to another embodiment of the present invention. In the above embodiment, the processing of the object S1 to be modified is carried out by processing the entire inside from the first surface 102A. In other words, a femtosecond laser beam is used to form a plurality of processing lines 104A / 104B in the object S1 to be modified by a non-jointing manner. However, the present invention is not limited thereto. Referring to FIG. 8A and FIG. 8B, in the embodiment of the present invention, a femtosecond laser beam is used to form a plurality of processing lines 104A / 104B in the object S1 to be modified by a jointing manner, and after processing a first part of the inside of the object S1 to be modified, a second part (or other part) of the inside of the object S1 to be modified is processed.

[0043] For example, the object S1 to be modified in the embodiment of the present invention may have multiple parts X1 included therein, and the processing is performed by completing the formation of multiple processing lines 104A in one of the parts X1 of the object S1 to be modified, and then continuing the processing to form multiple processing lines 104A in another part X1 of the object S1 to be modified. Thus, after the processing of the multiple parts X1 of the object S1 to be modified is completed, the processing inside the object S1 to be modified can be achieved by splicing, and the modified layer 106 is formed. In addition, as shown in Figures 8A and 8B, the processing method for forming multiple processing lines 104A is performed by processing in a flat cut mode perpendicular to the crystal axis direction of the single crystal material (Figure 8A) or processing in a flat cut mode parallel to the crystal axis direction of the single crystal material (Figure 8B). In other embodiments, the processing method can be processed in a direction corresponding to any other mark such as a flat cut, a notch, or in a direction of another mark corresponding to the crystal axis direction, and the present invention is not limited thereto. Working Example

[0044] To prove that the processing method of the single crystal material of the present invention can effectively form a modified layer and at the same time reduce the thickness of the modified layer, so that the thickness of the modified layer can be smaller than the kerf loss caused by mechanical cutting, the following examples are provided for further illustration. First Example:

[0045] In the first embodiment, the non-joining method and the vertical flat cut mode shown in Figures 3 to 6 were carried out for processing, and the processing conditions of the galvanometer amplitude, processing line interval, line processing speed, processing number of times, processing power, and total processing time of Examples 1 to 7 (EX1 to EX7) and Comparative Examples 1 to 7 (CX1 to CX7) are as shown in Table 1. In addition, whether or not the modified layer was normally formed was evaluated by judging whether or not cracks were observed under an optical microscope, and the evaluation results are listed in Table 1.

[0046] [Table 1] JPEG0007667213000003.jpg254163JPEG0007667213000004.jpg56163

[0047] As shown in Example 1 (EX1) to Example 7 (EX7) in Table 1, when the galvanometer amplitude, processing line spacing, line processing speed, processing times, and processing power are within the range of the present invention during processing, cracks are normally formed between the multiple processing lines, and thus the modified layer is normally formed (evaluated as OK). In comparison, referring to Comparative Example 1 (CX1) to Comparative Example 3 (CX3), when the processing speed is too fast (more than 7 mm per second) and high power is used (more than 3.9 W), continuous cracks are not formed between the multiple processing lines, and thus the modified layer cannot be normally formed (evaluated as NG). Referring to Comparative Example 2 (CX2), when the processing power is too high (4.1 W) and the processing speed is relatively slow (5 mm per second), continuous cracks are not formed between the multiple processing lines, and thus the modified layer cannot be normally formed. Referring to Comparative Example 4 (CX4), when the galvanometer amplitude is too small, continuous cracks are not formed between the multiple processing lines, and thus the modified layer cannot be normally formed. With reference to Comparative Example 5 (CX5), when the galvanometer amplitude is too large, the processing density is too low, and it is difficult for the cracks to extend, so the modified layer cannot be formed normally. With reference to Comparative Example 6 (CX6), when the processing line interval is too wide, even if a crack is formed, the interval between the processing lines is too wide, so it is difficult for the cracks to extend, so the modified layer cannot be formed normally. With reference to Comparative Example 7 (CX7), when the processing times are too small (1 time), continuous cracks are not formed between multiple processing lines, so the modified layer cannot be formed normally. Example 2:

[0048] In the second embodiment, the joining method and vertical flat cut mode shown in FIG. 8A were performed for processing, and the processing conditions of the galvanometer amplitude, processing line interval, line processing speed, processing number of times, processing power, and total processing time of the embodiments 8 to 11 (EX8 to EX11) and the comparative examples 8 to 12 (CX8 to CX12) are as shown in Table 2. In addition, the evaluation of whether the modified layer was normally formed was judged by whether cracks were observed under an optical microscope, and the evaluation results are listed in Table 2.

[0049] [Table 2] JPEG0007667213000006.jpg41166

[0050] As shown in Example 8 (EX8) to Example 11 (EX11) in Table 2, when the galvanometer amplitude, processing line interval, line processing speed, processing number, and processing power are within the range of the present invention during processing, even if a splicing method is used for processing, cracks are normally formed between multiple processing lines, and thus the modified layer is normally formed. In comparison, referring to Comparative Example 8 (CX8), when the galvanometer amplitude is too small, continuous cracks are not formed between multiple processing lines, and thus the modified layer cannot be normally formed. Referring to Comparative Example 9 (CX9), when the galvanometer amplitude is too large, the processing density is too low, and it is difficult for the cracks to extend, and thus the modified layer cannot be normally formed. Referring to Comparative Example 10 (CX10), when the processing line interval is too wide, even if a crack is formed, it is difficult for the cracks to extend because the interval between the processing lines is too wide, and thus the modified layer cannot be normally formed. Refer to Comparative Example 11 (CX11), when the number of processing times is too small (1 time), continuous cracks are not formed between multiple processing lines, and therefore the modified layer cannot be formed normally. Refer to Comparative Example 12 (CX12), when the processing power is too high (8.3W), vertical damage is formed, resulting in non-horizontal cracks, making it difficult for continuous cracks to extend, and therefore the modified layer cannot be formed normally. Refer to Comparative Example 13 (CX13), when the initial power is too low (3W), continuous cracks are not formed between multiple processing lines, and therefore the modified layer cannot be formed normally.

[0051] According to the above, the amorphous phase modification apparatus and the method for processing a single crystal material in the embodiment of the present invention can successfully form a modified layer using a femtosecond laser beam, and the thickness of the modified layer is reduced (controlled to a range of 40-80 microns). In this way, the thickness of the modified layer can be made smaller than the loss of the cutting line caused by mechanical cutting, and the modified layer can be easily separated after applying an external force. [Industrial Applicability]

[0052] The amorphous phase modification apparatus and method for processing single crystal materials can be used to effectively create modified layers in single crystal materials, such as silicon carbide, which can be easily sliced ​​or separated. [Explanation of symbols]

[0053] 10: Femtosecond laser source 20:Speckle Adjuster 30: Beam angle scanner 40: Focusing objective lens 50: Motion module 102A: 1st page 104A, 104B: Processed wire 106: Modified layer CX1: Crack L1, L2, L3, L3', L4, L4': Laser beams P1: Starting point P2, P3: Turning points P4: Route end point S1: Object to be modified X1: The part of the object to be modified

Claims

1. An amorphous phase modification device used to form an amorphous phase modification layer, comprising: a femtosecond laser source used to emit a laser beam; a speckle adjuster used to adjust the speckle size of the laser beam emitted by the femtosecond laser source; a beam angle scanner used to adjust the angle of the laser beam received from the speckle adjuster, the beam angle scanner performing small angle scanning at a motion frequency of 100 Hz to 10,000 Hz; a focusing objective lens adapted to receive the laser beam passing through the beam angle scanner and to focus the laser beam; a motion module adapted to mount an object to be modified, enabling the object to receive the laser beam passing through the focusing objective lens; Including, The speckle quality of the laser beam after passing through the speckle adjuster (M ２ ) is in the range of 1.0 to 1.4; Amorphous phase modifier.

2. The wavelength of the laser beam emitted by the femtosecond laser source is 800 nm to 1600 nm; 2. The amorphous phase modification apparatus of claim 1.

3. The wavelength of the laser beam emitted by the femtosecond laser source is 1020 nm to 1080 nm; 3. The amorphous phase modification apparatus according to claim 2.

4. the beam angle scanner having a single axis of rotation; 2. The amorphous phase modification apparatus of claim 1.

5. the small angle is between 0.01 radians and 0.05 radians; 2. The amorphous phase modification apparatus of claim 1.

6. the beam angle scanner is a resonant scanner, a piezoelectric material driven lens, or an acousto-optic modulator; 2. The amorphous phase modification apparatus of claim 1.

7. The pulse repetition rate of the laser beam emitted by the femtosecond laser source is in the range of 100 kHz to 10 MHz, the pulse width is in the range of 300 femtoseconds to 2000 femtoseconds, and the pulse energy is in the range of 1 microjoule to 30 microjoule.

2. The amorphous phase modification apparatus of claim 1.

8. The pulse repetition rate of the laser beam emitted by the femtosecond laser source is in the range of 500 kHz to 1000 kHz, and the pulse width is in the range of 1000 femtoseconds to 2000 femtoseconds.

8. The amorphous phase modification apparatus according to claim 7.

9. said beam angle scanner performing said small angle scanning at a motion frequency of 100 Hz to 800 Hz; 2. The amorphous phase modification apparatus of claim 1.

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