Package carrier board with embedded highly efficient heat dissipation module and method for manufacturing same

By embedding an efficient heat dissipation module composed of metal layer, copper wall and phase change material into the packaging carrier plate, and filling the dielectric layer at the contact between the module and the carrier plate, the problems of insufficient heat dissipation performance and high production costs in the prior art are solved, and efficient and economical heat dissipation effect is achieved.

JP7667888B2Active Publication Date: 2025-04-23ZHUHAI ACCESS SEMICONDUCTOR CO LTD
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Patent Information

Application Number
JP2024001158
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2023-02-10
Filing Date
2024-01-09
Publication Date
2025-04-23
Estimated Expiration
2044-01-09

AI Technical Summary

Technical Problem

In the prior art, the heat dissipation performance of the packaging carrier plate is insufficient, and the production cost of the metal heat dissipation module is high and the applicability is low, because the module size needs to be adjusted according to the packaging carrier plate of different sizes.

Method used

The metal carrier plate is used as the basis and an efficient heat dissipation module is embedded. The module consists of the first and second metal layers, copper walls and phase change materials. The cavity between the copper walls is filled with phase change materials, and the contact part between the module and the carrier plate is filled with dielectric layers to reduce the need for dimensional adjustment.

Benefits of technology

It improves heat transfer efficiency, enhances internal heat dissipation efficiency, reduces production costs, and expands the scope of application of modules.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

To provide a package carrier board having an embedded highly efficient heat dissipation module capable of reducing manufacturing costs while ensuring heat dissipation effect, and a manufacturing method thereof.SOLUTION: A package carrier board includes a metal carrier board 200 provided with a first frame portion, and a metal heat dissipation module 100 including a first metal layer and a second metal layer, with a plurality of copper walls juxtaposed between the first metal layer and the second metal layer being connected, and with a phase change material filling a cavity formed between two adjacent copper walls, and the metal heat dissipation module 100 is embedded in the first frame portion, and a first dielectric layer 230 is filled in a gap between the metal heat dissipation module 100 and the inner wall of the first frame portion.SELECTED DRAWING: Figure 1
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Description

[Technical field]

[0001] The present invention relates to the technical field of semiconductor package structure, and in particular to a package carrier board with embedded high-efficiency heat dissipation module and a method for fabricating the same. [Background technology]

[0002] Currently, the manufacturing process of the packaging substrate of an embedded device requires a prefabricated frame plate, the chip is glued into the frame, and then packaged and additively manufactured.

[0003] Conventional frames are usually made of organic materials, and in the case of a package carrier board with embedded multi-layer chips, the heat dissipation performance is not ensured. To overcome this problem, the related art proposes to install a metal heat dissipation module in the frame, fill the metal module with a phase change material, and enhance the heat dissipation effect by utilizing the characteristics of the phase change material, such as fast heat absorption and fast heat conduction of the metal. However, since the size of the frame varies from package carrier board to package carrier board, the process size of the metal heat dissipation module needs to be adjusted for each product development in order to ensure that the metal heat dissipation module can be embedded in various frame parts, which results in low applicability of the metal heat dissipation module and high manufacturing costs. Summary of the Invention [Problem to be solved by the invention]

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art, and therefore proposes a package carrier board with an embedded highly efficient heat dissipation module and a manufacturing method thereof, which can reduce manufacturing costs while ensuring heat dissipation effect. [Means for solving the problem]

[0005] In a first aspect, an embodiment of the present invention provides a package carrier board having an embedded highly efficient heat dissipation module, the package carrier board having an embedded highly efficient heat dissipation module comprising: a metal carrier board provided with a first frame portion; a metal heat dissipation module including a first metal layer and a second metal layer, a plurality of copper walls arranged in parallel between the first metal layer and the second metal layer being connected, and a cavity formed between two adjacent copper walls being filled with a phase change material, the metal heat dissipation module being embedded in the first frame portion, and a first dielectric layer being filled in a gap between the metal heat dissipation module and an inner wall of the first frame portion.

[0006] The package carrier board with the highly efficient heat dissipation module embedded therein according to the embodiment of the present invention has at least the following beneficial effects. First, the metal heat dissipation module is provided in the first frame of the metal carrier board, and the heat transfer effect can be improved by utilizing the metal's characteristic of fast heat dissipation, and the internal heat dissipation efficiency of the package carrier board can be improved. Second, a cavity is formed between the metal heat dissipation modules by the copper wall, and the cavity is filled with a phase change material, so that the heat transferred through the first metal layer and the second metal layer can be quickly absorbed by the phase change material and transferred to the other side to be released to the outside, and the heat dissipation efficiency can be improved by utilizing the metal layers on both sides of the metal heat dissipation module, and the heat transfer efficiency between the first metal layer and the second metal layer can be improved by the copper wall. Furthermore, the gap between the metal heat dissipation module and the side plate of the first frame can be filled with the first dielectric layer, so that the metal heat dissipation module can be adapted to more frame parts, and it is not necessary to adjust the process dimensions to the dimensions of the frame parts, and the production cost of the metal heat dissipation module can be effectively reduced.

[0007] According to some embodiments of the present invention, the metal heat dissipation module comprises: The metal heat dissipation module further includes a thermally conductive medium layer, the thermally conductive medium layer being filled in the thermal conduction groove of the metal heat dissipation module, the thermal conduction groove being a concave groove with an open side and composed of the first metal layer, the second metal layer and the copper wall, and the edge of the thermally conductive medium layer being flush with the edge of the first metal layer.

[0008] According to some embodiments of the present invention, a plurality of copper pillars are provided on an inner surface of the first metal layer and / or the second metal layer.

[0009] According to some embodiments of the present invention, a package carrier board having the highly efficient heat dissipation module embedded therein comprises: Chip and The semiconductor device further includes a metal mounting base having one side in close contact with the back surface of the chip and the other side in close contact with the metal heat dissipation module and the metal carrier board.

[0010] According to some embodiments of the present invention, when the width of the metal mounting base is equal to or smaller than the width of the first frame portion, one end of the metal mounting base is in close contact with the metal heat dissipation module and the other end is in close contact with the metal carrier board; or When the width of the metal mounting base is greater than the width of the first frame portion, both ends of the metal mounting base are in close contact with the metal carrier board and cover the outside of the first frame portion.

[0011] According to some embodiments of the present invention, the metal carrier board further comprises a second frame portion filled with the second dielectric layer.

[0012] According to some embodiments of the present invention, a third dielectric layer is further pressed onto the outside of the metal carrier board, the metal heat dissipation module, and the chip, and the third dielectric layer has a through hole, at least one first blind hole, and at least one second blind hole, the inside of the first blind hole communicating with the front surface of the chip, the inside of the second blind hole communicating with the surface of the metal carrier board, and the through hole penetrating the second frame portion.

[0013] According to some embodiments of the present invention, a first metal pattern connected to the front surface of the chip through the first blind hole and extending to the outside of the third dielectric layer; a second metal pattern connected to an outer surface of the metal heat dissipation module through the second blind hole and extending to an outside of the third dielectric layer; The semiconductor device further includes a third metal pattern extending through the through hole to both side surfaces of the third dielectric layer.

[0014] In a second aspect, the present invention also provides a method for producing a composition comprising the steps of: forming a plurality of juxtaposed copper walls on a first metal layer and compressing a phase change material into a cavity formed by two of the copper walls; electroplating a metal on the top surface of the copper wall to obtain a second metal layer; preparing a metal carrier board with a first frame, embedding the metal heat dissipation module in the first frame, pressing a substrate dielectric material between the metal heat dissipation module and a sidewall of the first frame to obtain a first dielectric layer, and polishing the first dielectric layer to expose the metal carrier board and the metal heat dissipation module; and performing additive manufacturing to obtain a package carrier board.

[0015] The method for fabricating a package carrier board with an embedded high-efficiency heat dissipation module according to the embodiment of the present invention has at least the following beneficial effects. First, the metal heat dissipation module is provided in the first frame of the metal carrier board, and the metal's characteristic of fast heat dissipation is utilized to enhance the heat transfer effect and improve the internal heat dissipation efficiency of the package carrier board. Second, a cavity is formed between the metal heat dissipation modules by the copper wall, and the cavity is filled with a phase change material, so that the heat transferred through the first metal layer and the second metal layer can be quickly absorbed by the phase change material and transferred to the other side to be released to the outside, and the metal layers on both sides of the metal heat dissipation module are utilized to enhance the heat dissipation efficiency, and the copper wall enhances the heat transfer efficiency between the first metal layer and the second metal layer. Furthermore, the gap between the metal heat dissipation module and the side plate of the first frame is filled with the first dielectric layer, so that the metal heat dissipation module can be adapted to more frame parts, and it is not necessary to adjust the process dimensions to the dimensions of the frame parts, and the production cost of the metal heat dissipation module can be effectively reduced.

[0016] According to some embodiments of the present invention, prior to the step of compressing a phase change material into the two copper-walled cavities, The method further includes fabricating a plurality of copper pillars on the first metal layer.

[0017] According to some embodiments of the present invention, prior to the step of electroplating metal on the top surface of the copper wall to obtain a second metal layer, The method further includes pressing a high thermal conductivity media material onto an area of ​​the first metal layer that is outside the cavity to form a thermally conductive media layer, and polishing the edges of the thermally conductive media layer to be flush with the edges of the first metal layer.

[0018] According to some embodiments of the present invention, the metal carrier board further includes a second frame, and the step of pressing a substrate dielectric material between the metal heat dissipation module and a sidewall of the first frame to obtain a first dielectric layer and polishing the first dielectric layer to expose the metal carrier board and the metal heat dissipation module includes: Pressing a substrate dielectric material onto the metal heat dissipation module and the metal carrier board to form a first dielectric layer between the metal heat dissipation module and a sidewall of the first frame, and forming a second dielectric layer on the second frame; polishing the first dielectric layer and the second dielectric layer to expose a metal carrier board and the metal heat dissipation module.

[0019] According to some embodiments of the present invention, the step of performing additive manufacturing to obtain a package carrier board comprises: A step of disposing a first seed layer on the surface of the metal heat dissipation module and the metal carrier board, in which, when the width of the first seed layer is smaller than the width of the first frame portion, both ends of the first seed layer are located on the metal heat dissipation module and the metal carrier board, respectively, or, when the width of the first seed layer is larger than the width of the first frame portion, both ends of the first seed layer are in close contact with the metal carrier board and cover the outside of the first frame portion; forming a metal mounting platform on the first seed layer by a pattern electroplating process; and attaching the back surface of the chip to the metal mounting base.

[0020] According to some embodiments of the present invention, after the step of attaching the back surface of the chip to the metal mounting platform, Pressing a substrate dielectric material on both sides of the metal heat dissipation module and the metal carrier board to form a third dielectric layer; irradiating the third dielectric layer with a laser to obtain at least one first blind hole whose inside communicates with a front surface of the chip and at least one second blind hole whose inside communicates with a surface of the metal carrier board; mechanically drilling holes in a third dielectric layer to obtain through holes passing through the second frame; providing a second seed layer in the first blind hole, the second blind hole, and the through hole, and using a pattern electroplating process to create a first metal pattern in the first blind hole, the first metal pattern extending to the outside of the third dielectric layer, the second blind hole, the second metal pattern extending to the outside of the third dielectric layer, and the through hole, the third metal pattern extending to both side surfaces of the third dielectric layer. [Brief description of the drawings]

[0021] [Figure 1] 2 is a structural schematic diagram of a package carrier board embedded with a high-efficiency heat dissipation module according to an embodiment of the present invention; [Diagram 2] FIG. 4 is a structural schematic diagram of a metal heat dissipation module according to another embodiment of the present invention. [Diagram 3] FIG. 4 is a schematic diagram of a first metal layer and copper walls according to another embodiment of the present invention. [Figure 4] 4 is a schematic diagram of a phase change material and a thermally conductive medium layer bonded together in accordance with another embodiment of the present invention; [Diagram 5] FIG. 4 is a structural schematic diagram of a metal carrier board according to another embodiment of the present invention. [Figure 6] 11 is a schematic diagram of a metal mounting stage fabricated according to another embodiment of the present invention. FIG. [Figure 7] FIG. 13 is a structural schematic diagram of another embodiment of the present invention with a chip mounted and a third dielectric layer compressed. [Figure 8] FIG. 13 is a schematic diagram of drilling holes into the third dielectric layer according to another embodiment of the present invention. [Figure 9] FIG. 2 is a structural schematic diagram of a package carrier board according to another embodiment of the present invention. [Figure 10] 4 is a flowchart of a method for fabricating a package carrier board with an embedded high-efficiency heat dissipation module according to another embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0022] Hereinafter, the embodiments of the present invention will be described in detail, and an example of the embodiment will be shown in the drawings, in which the same or similar reference numerals indicate the same or similar elements or elements having the same or similar functions throughout the drawings. The embodiments described below with reference to the drawings are illustrative and are only used to explain the present invention, and should not be understood as limiting the present invention.

[0023] In addition, when describing orientations in the description of the present invention, the orientations or positional relationships indicated as up, down, front, rear, left, right, etc. are based on the orientations or positional relationships shown in the drawings, and are merely intended to facilitate and simplify the description of the present invention. They do not indicate or imply that the present invention must have a specific orientation, or be configured or operate in a specific orientation, and should not be understood as limiting the present invention.

[0024] In the description of the present invention, some means one or more, and more means two or more, and "greater than", "less than", "exceeding", etc. are understood to be exclusive of the number, and "greater than", "less than", "within", etc. are understood to be inclusive. When "first", "second" are mentioned, they are merely intended to distinguish technical features, and should not be understood to indicate or imply relative importance, or to imply the number of the indicated technical features, or to imply the context of the indicated technical features.

[0025] In describing the present invention, unless otherwise clearly limited, the terms "provide", "mount", "connect" and the like should be understood in a broad sense, and those skilled in the art can reasonably determine the specific meaning of the above terms in the present invention in combination with the specific content of the technical solution.

[0026] Hereinafter, the embodiments of the present invention will be further described with reference to the drawings.

[0027] As shown in FIG. 1, FIG. 1 is a schematic diagram of a package carrier board embedding a high-efficiency metal heat dissipation module 100 according to an embodiment of the present invention. The package carrier board embedding the high-efficiency heat dissipation module according to the present embodiment includes: A metal carrier board 200 provided with a first frame portion 210; The metal heat dissipation module 100 includes a first metal layer 110 and a second metal layer 150, and a plurality of copper walls 120 arranged in parallel between the first metal layer 110 and the second metal layer 150 are connected, and a cavity formed between two adjacent copper walls 120 is filled with a phase change material 130, wherein the metal heat dissipation module 100 is embedded in a first frame portion 210, and a first dielectric layer 230 is filled in a gap between the metal heat dissipation module 100 and an inner wall of the first frame portion 210.

[0028] In addition, the metal carrier board 200 may be a metal carrier board provided with a plurality of frame parts. As shown in FIG. 5, the metal carrier board 200 may be provided with any number of first frame parts 210. The first frame part 210 is a frame part for mounting the chip 300. The number of the first frame parts 210 may be determined according to the actual needs of the arrangement of the chip 300. The number of the chips 300 provided for each first frame part 210 is not limited. As shown in FIG. 7, two chips 300 are provided on the upper side of the first frame part 210, and one chip 300 is provided on the lower side, and the bottom surface of the chip 300 and the port are overlapped at the position of the metal heat dissipation module 100. The heat generated during the operation of the chip 300 is absorbed by the metal heat dissipation module 100 and transmitted to the outside by the metal material, thereby effectively improving the heat dissipation efficiency.

[0029] In addition, the metal used in this embodiment may be copper, which has good thermal conductivity while effectively reducing material costs, but of course, other thermally conductive metals may be used according to actual needs.

[0030] In addition, when one metal heat dissipation module 100 is embedded in each of the first frames 210, and the dimensions of the metal heat dissipation module 100 match those of the first frame 210, that is, when there is no gap between the embedded one, the first dielectric layer 230 can be omitted. When the dimensions of the metal heat dissipation module 100 are smaller than those of the first frame 210, in this embodiment, the first dielectric layer 230 is pressed between the inner wall of the first frame 210 and the metal heat dissipation module 100. The first dielectric layer 230 may be a general substrate dielectric material filled in the gap between the metal heat dissipation module 100 and the first frame 210 by simple pressing and polishing. In this way, it is not necessary to prepare metal heat dissipation modules 100 of dimensions corresponding to each dimension of the first frame 210, and the application range of the metal heat dissipation module 100 of the standard size is expanded, and the production cost is effectively reduced and the production efficiency is improved. After filling the substrate with dielectric material to obtain the first dielectric layer 230, the surfaces of the metal heat dissipation module 100 and the metal carrier board 200 may be exposed by a process such as polishing, so as not to affect heat dissipation.

[0031] In addition, the first metal layer 110 and the second metal layer 150 are parallel to each other, and the copper wall 120 is connected between the first metal layer 110 and the second metal layer 150. In production, the second metal layer 150 may be electroplated on the upper surface of the copper wall 120 after the copper wall 120 is manufactured on the first metal layer 110. Both ends of the copper wall 120 are connected to the first metal layer 110 and the second metal layer 150, so that the heat from the first metal layer 110 is conducted to the second metal layer 150, or the heat from the second metal layer 150 is conducted to the first metal layer 110, thus improving the heat dissipation efficiency when the heating on both sides of the metal heat dissipation module 100 is non-uniform. For example, since the chip 300 is not provided on the first metal layer 110 but is provided on the second metal layer 150, a lot of heat is introduced into the second metal layer 150 during operation, and the temperature of the first metal layer 110 is lower. In this case, the copper wall 120 can conduct the heat generated by the second metal layer 150 to the first metal layer 110, and both the first metal layer 110 and the second metal layer 150 dissipate heat, thereby improving the heat dissipation efficiency.

[0032] In addition, since the copper wall 120 is connected to the first metal layer 110 and the second metal layer 150, a sealed cavity is formed inside the metal heat dissipation module 100. In this embodiment, the cavity is filled with the phase change material 130. According to the characteristics of the phase change material 130, which is fast in absorbing heat, the phase change material 130 can absorb heat from the first metal layer 110 and the second metal layer 150, maintain the first metal layer 110 and the second metal layer 150 at a relatively low temperature, improve their individual thermal conduction efficiency, and promote further distribution of heat in the metal heat dissipation module 100, so that the metal heat dissipation module 100 can be used to sufficiently achieve overall heat dissipation. For example, still referring to the above example, the chip 300 is not provided on the first metal layer 110, but is provided on the second metal layer 150, the temperature of the second metal layer 150 is higher, the copper wall 120 conducts heat to the first metal layer 110, and the phase change material 130 absorbs the heat of the second metal layer 150 to quickly reduce the temperature of the second metal layer 150 and more effectively conduct the heat generated by the operation of the chip 300; furthermore, the phase change material 130 fills the cavity, i.e., the phase change material 130 is in direct contact with the wall of the copper wall 120, and the wall area is large, so that the absorbed heat can be more efficiently released from the first metal layer 110 with a lower temperature through the wall with a larger area, thereby improving the thermal conduction efficiency of the entire metal heat dissipation module 100.

[0033] The phase change material 130 may be an organic phase change material 130 or an inorganic metal alloy material. When the phase change material 130 that is liquid at room temperature is used after the copper wall 120 is formed on the first metal layer 110, the second metal layer 150 needs to be electroplated and then an injection hole needs to be opened in the second metal layer 150 to inject the phase change material 130, which complicates the manufacturing process and also adversely affects the sealing and reliability of the second metal layer 150 due to the hole opening. Therefore, in this embodiment, the phase change material 130 may be a phase change material 130 that is solid at room temperature and becomes liquid or gas when heated. After the copper wall 120 is formed on the first metal layer 110, the phase change material 130 that is solid at room temperature is pressed into the cavity, and the second metal layer 150 is electroplated, which simplifies the manufacturing process.

[0034] Also, in one embodiment, referring to FIG. 2, the metal heat dissipation module 100 includes: The metal heat dissipation module 100 further includes a thermally conductive medium layer 140, which is filled in the thermal conduction groove of the metal heat dissipation module 100. The thermal conduction groove is a concave groove with an open side and is composed of the first metal layer 110, the second metal layer 150, and the copper wall 120. The thermally conductive medium layer 140 has an edge flush with the edge of the first metal layer 110.

[0035] In addition, the copper walls 120 arranged in parallel between the first metal layer 110 and the second metal layer 150 are connected to form a cavity between two adjacent copper walls 120, while the outermost copper wall 120 may not be flush with the edges of the first metal layer 110 and the second metal layer 150. As shown in Figures 2 and 3, a groove with one side open is formed between the leftmost and rightmost copper walls 120 and the first metal layer 110 and the second metal layer 150. Since the groove is not an enclosed space, when the phase change material 130 is heated and liquefied or vaporized, the phase change material 130 will be lost. Therefore, in this embodiment, the groove is filled with a thermally conductive medium material to form a thermally conductive medium layer 140, which promotes thermal conduction between the copper wall 120 and the first metal layer 110 and the second metal layer 150. For specific effects, reference may be made to the description of the phase change material 130 in the above embodiment, and the description will not be repeated here.

[0036] In addition, during manufacturing, the second metal layer 150 is formed on the upper side of the copper wall 120 by electroplating. Referring to FIG. 4, the phase change material 130 is pressed into the cavity, and the thermally conductive medium material is pressed on both sides at the same time to form the thermally conductive medium layer 140, and the edges are polished together, and then the second metal layer 150 is electroplated.

[0037] In one embodiment, a plurality of copper pillars are provided on the inner surface of the first metal layer and / or the second metal layer.

[0038] The difference between the copper pillar and the copper wall is that the copper pillar is connected only to the first metal layer or the second metal layer and does not form a sealed area. In this embodiment, the copper pillar is provided to increase the surface area of ​​the first metal layer and the second metal layer, thereby improving the thermal conduction effect.

[0039] The copper pillars may be provided inside the cavity to increase the efficiency of the conduction of heat absorbed by the phase change material 130, or may be provided outside the cavity to increase the surface area of ​​the first metal layer 110 and the second metal layer 150, thereby increasing the thermal conduction efficiency.

[0040] In addition, in one embodiment, referring to FIG. 6 and FIG. 7, a package carrier board in which a high-efficiency heat dissipation module is embedded includes: 300 chips, The metal mounting base 250 has one side in close contact with the rear surface of the chip 300 and the other side in close contact with the metal heat dissipation module 100 and the metal carrier board 200 .

[0041] In addition, since a device is usually provided on the front side of the chip 300, the flatness of the front side is lower than that of the back side. In this embodiment, the back side of the chip 300 is attached to the metal mounting base 250, so that the metal mounting base 250 can quickly dissipate the heat at the back side of the chip 300, and the metal mounting base 250 is in close contact with the metal heat dissipation module 100 and the metal carrier board 200, so that the heat can be quickly conducted to the outside, thereby improving the internal heat conduction effect of the package carrier board.

[0042] In addition, the surface of the metal mounting base 250 is in contact with both the metal heat dissipation module 100 and the metal carrier board 200, and the first dielectric layer 230 is filled between the metal heat dissipation module 100 and the metal carrier board 200. When the two are not in direct contact with each other, the metal mounting base 250 functions as a heat conduction medium between the metal heat dissipation module 100 and the metal carrier board 200. When the metal heat dissipation module 100 quickly absorbs heat, the heat is conducted by the metal mounting base 250 to the metal carrier board 200 and then to the outside, thereby increasing the heat conduction path and improving the heat dissipation effect.

[0043] As an example, referring to FIG. 7, heat generated during operation of the chip 300 is transferred to the metal mounting base 250 through the back surface, and the metal mounting base 250 conducts the heat to the metal heat dissipation module 100 and the metal carrier board 200. The metal carrier board 200 dissipates the heat conducted by the metal mounting base 250 to the outside. At the same time, the first metal layer 110 and the second metal layer 150 of the metal heat dissipation module 100 quickly absorb the heat conducted by the metal mounting base 250 by utilizing the principle described in the above embodiment, and the heat is transferred to the metal carrier board 200 via another metal mounting base 250 with a lower temperature, thereby increasing the thermal conduction path and improving the heat dissipation effect.

[0044] In addition, in this embodiment, the number of metal mounting tables 250 and chips 300 is not limited, and one or more chips 300 may be mounted on each metal mounting table 250 if the dimensions allow, and the specific arrangement method may be determined according to the actual needs of mounting the chips 300.

[0045] In addition, in one embodiment, referring to FIG. 6 and FIG. 7, when the width of the metal mounting base 250 is equal to or smaller than the width of the first frame portion 210, one end of the metal mounting base 250 is in close contact with the metal heat dissipation module 100 and the other end is in close contact with the metal carrier board 200, or When the width of the metal mounting base 250 is greater than the width of the first frame portion 210 , both ends of the metal mounting base 250 are in close contact with the metal carrier board 200 and cover the outside of the first frame portion 210 .

[0046] As an example, referring to FIG. 6, the upper metal mounting base 250 is narrower than the first frame portion 210 and may be provided between the metal carrier board 200 and the metal heat dissipation module 100 to contact both the metal heat dissipation module 100 and the metal carrier board 200, thereby ensuring the heat dissipation effect.

[0047] As an example, referring to FIG. 6, the width of the lower metal mounting base 250 is larger than the width of the first frame portion 210, and this metal mounting base 250 spans both ends of the first frame portion 210 and covers the outside of the metal heat dissipation module 100, thereby allowing heat from the metal heat dissipation module 100 to be transferred to the metal carrier board 200 via the metal mounting base 250, thereby improving heat dissipation efficiency.

[0048] In addition, in one embodiment, referring to FIG. 5 and FIG. 6, the metal carrier board 200 further includes a second frame portion 220 filled with a second dielectric layer 240. As shown in FIG.

[0049] In addition, the second frame portion 220 is a frame portion in which the chip 300 is not provided, and the same substrate dielectric material as the first dielectric layer 230 may be filled inside it, pressed and polished to form the second dielectric layer 240, thereby making it structurally possible to provide a metal pattern on the metal carrier board 200.

[0050] In addition, in one embodiment, referring to FIG. 8, a third dielectric layer 400 is further pressed onto the outside of the metal carrier board 200, the metal heat dissipation module 100, and the chip 300, and the third dielectric layer 400 is provided with a through hole 430, at least one first blind hole 410, and at least one second blind hole 420, the inside of the first blind hole 410 being connected to the front of the chip 300, the inside of the second blind hole 420 being connected to the surface of the metal carrier board 200, and the through hole 430 penetrating the second frame portion 220.

[0051] 6, that is, after the metal heat dissipation module 100 is embedded in the metal carrier board 200 and the metal mounting base 250 and the chip 300 are provided, the metal carrier board 200 may be packaged by pressing the substrate dielectric material on both sides of the structure to form the third dielectric layer 400. The material of the third dielectric layer 400 may be selected according to actual needs, and may be the same as the material of the first dielectric layer 230 and the second dielectric layer 240.

[0052] It should be noted that the first blind hole 410 and the second blind hole 420 can be obtained by irradiating the third dielectric layer 400 with a laser, and the through hole 430 can be obtained by mechanical drilling. As shown in Fig. 8, the position of the first blind hole 410 can correspond to the device on the front side of the chip 300, and the position of the second blind hole 420 can correspond to the position of the metal carrier board 200, which provides a structural basis for electroplating metal patterns to dissipate heat to the outside.

[0053] In addition, by providing the through hole 430 at a position corresponding to the second frame portion 220, it is structurally possible to electrically connect the two layers of the package carrier board, and if there is no electrical need, it is not necessary to drill the through hole 430, and this embodiment is not limited in this regard.

[0054] In addition, in one embodiment, referring to FIG. 9, a package carrier board in which a high-efficiency heat dissipation module is embedded includes: a first metal pattern 510 connected to the front surface of the chip 300 through a first blind hole 410 and extending to the outside of the third dielectric layer 400; a second metal pattern 520 connected to the outer surface of the metal heat dissipation module 100 through a second blind hole 420 and extending to the outside of the third dielectric layer 400; The third metal pattern 530 extends to both side surfaces of the third dielectric layer 400 through the through holes 430 .

[0055] 9, the first metal pattern 510 of the first blind hole 410 extends from the front side of the chip 300 to the outside of the third dielectric layer 400, so that the first metal pattern 510 dissipates the heat of the device on the front side of the chip 300 to the outside. The second metal pattern 520 of the second blind hole 420 extends from the metal carrier board 200 to the outside, and as described in the above embodiment, the heat from the chip 300 is transferred to the metal carrier board 200 by the metal mounting base 250 and the metal heat dissipation module 100, and the heat from the metal carrier board 200 is transferred to the outside via the second metal pattern 520. When the first metal pattern 510 and the second metal pattern 520 are used to enhance the internal heat conduction efficiency of the package carrier board, the internal heat is quickly transferred to the outside and dissipated to the outside by the first metal pattern 510 and the second metal pattern 520, thereby enhancing the heat dissipation effect of the package carrier board.

[0056] In addition, since the third metal pattern 530 extends to both sides of the third dielectric layer 400 through the through holes 430, metal portions are formed on both sides of the third dielectric layer 400, making it possible to electrically connect the circuit structures on both sides of the package carrier board.

[0057] Also, referring to Figure 10, Figure 10 is a flowchart of a method for manufacturing a package carrier board in which a highly efficient heat dissipation module is embedded, and the method for manufacturing a package carrier board in which a highly efficient heat dissipation module is embedded according to an embodiment of the present invention includes, but is not limited to, the following steps S1 to S4. Step S1: A plurality of juxtaposed copper walls are fabricated on a first metal layer, and a phase change material is pressed into a cavity defined by two adjacent copper walls. Step S2: Electroplate metal on the top surface of the copper wall to obtain a second metal layer. Step S3: Prepare a metal carrier board with a first frame portion, embed a metal heat dissipation module in the first frame portion, press-bond a substrate dielectric material between the metal heat dissipation module and a sidewall of the first frame portion to obtain a first dielectric layer, and polish the first dielectric layer to expose the metal carrier board and the metal heat dissipation module. Step S4: Perform additive manufacturing to obtain a package carrier board.

[0058] In addition, the width and thickness of the first metal layer 110 may be determined according to actual needs, and are not limited in this embodiment. After the first metal layer 110 is formed, a copper wall 120 may be formed on the upper side of the first metal layer 110 by electroplating or the like to obtain the structure shown in FIG. 3, and a solid phase change material 130 may be pressed between two adjacent copper walls 120. The volume of the cavity may be calculated from the distance between the copper walls 120, and then a phase change material 130 of a volume corresponding to the volume may be inserted and pressed to obtain the structure shown in FIG. 4, thereby saving the phase change material 130 and shortening the time required for polishing after pressing, thereby improving the construction efficiency.

[0059] If the phase change material 130 is pressed to be flush with the upper surface of the copper wall 120, the second metal layer 150 can be electroplated on the upper surface of the copper wall 120 to obtain the metal heat dissipation module 100. The heat dissipation effect and principle of the metal heat dissipation module 100 may refer to the description of the above structural embodiment, and will not be described again here.

[0060] 5, the number and dimensions of the first frame 210 may be adjusted according to the needs of mounting the chip 300. After the metal heat dissipation module 100 is embedded in the first frame 210, a substrate dielectric material may be pressed into the gap between the first frame 210 and the metal heat dissipation module 100, and then polished to expose the metal heat dissipation module 100 and the metal carrier board 200, thereby forming a first dielectric layer 230.

[0061] In addition, additive manufacturing may be performed according to the needs of the package carrier board. For example, as shown in FIG. 7, a metal carrier board 200 and a metal heat dissipation module 100 are provided with a metal mounting base 250, a third dielectric layer 400, and a metal pattern, but this embodiment is not particularly limited thereto.

[0062] Moreover, in one embodiment, before the step S1 compresses the phase change material into the cavity formed by the two adjacent copper walls, the step S1 further includes, but is not limited to, a step S11.

[0063] Step S11: A plurality of copper pillars are fabricated on the first metal layer.

[0064] In addition, the copper pillars may be fabricated on the first metal layer 110 by electroplating, and the distribution area and effects thereof may refer to the description of the above structural embodiment, and will not be described again here.

[0065] In addition, when obtaining the second metal layer by electroplating, if it is necessary to create a copper pillar in the second metal layer, a groove may be opened in the phase change material, and a copper pillar connected to the second metal layer may be formed in the groove during electroplating.

[0066] In addition, in one embodiment, the method further includes, but is not limited to, step S12 before step S2.

[0067] Step S12: A high thermal conductivity medium material is pressed onto the area of ​​the first metal layer outside the cavity to form a thermally conductive medium layer, and an edge of the thermally conductive medium layer is made flush with an edge of the first metal layer by a polishing process.

[0068] Referring to FIG. 3, after the copper walls 120 are formed on the first metal layer 110, the phase change material 130 is pressed between adjacent copper walls 120, and a high thermal conductivity medium material is pressed onto the outside of the leftmost and rightmost copper walls 120 to form a thermally conductive medium layer 140, thereby obtaining the structure shown in FIG. 4. After pressing, the material is polished to make the upper surfaces of the thermally conductive medium layer 140, the copper walls 120, and the phase change material 130 flush with each other, and the surface of the second metal layer 150 is made flat by electroplating.

[0069] Moreover, in one embodiment, the metal carrier board 200 further includes a second frame portion 220, and step S3 further includes, but is not limited to, step S31 and step S32.

[0070] Step S31: A substrate dielectric material is pressed onto the metal heat dissipation module and the metal carrier board to form a first dielectric layer between the metal heat dissipation module and the sidewall of the first frame portion, and a second dielectric layer is formed on the second frame portion.

[0071] Step S32: Polish the first dielectric layer and the second dielectric layer to expose the metal carrier board and the metal heat dissipation module.

[0072] 5, the structure of the metal carrier board 200 includes a first frame 210 and a second frame 220. After the metal heat dissipation module 100 is embedded in the first frame 210, the same substrate dielectric material may be simultaneously pressed and polished to form the above-mentioned first dielectric layer 230, and the second dielectric layer 240 may be formed on the second frame 220. The functions of the first dielectric layer 230 and the second dielectric layer 240 may refer to the description of the above embodiment, and will not be described again here.

[0073] Moreover, in one embodiment, step S4 further includes steps S41 to S43, but is not limited to these. Step S41: A first seed layer is placed on the surface of a metal heat dissipation module and a metal carrier board. When the width of the first seed layer is smaller than the width of the first frame portion, both ends of the first seed layer are located on the metal heat dissipation module and the metal carrier board, respectively; or when the width of the first seed layer is larger than the width of the first frame portion, both ends of the first seed layer are in close contact with the metal carrier board and cover the outside of the first frame portion. Step S42: A metal mounting platform is fabricated on the first seed layer by a pattern electroplating process. Step S43: The back surface of the chip is attached to a metal mounting base.

[0074] In addition, the metal mounting platform 250 is obtained by electroplating a first seed layer, and based on this, the arrangement method and dimensions of the first seed layer can be adjusted according to the needs of the metal mounting platform 250. The structure of the obtained metal mounting platform 250 is shown in FIG. 6. For the metal mounting platform 250 and its functions and effects, the description of the above structural embodiment may be referred to, and will not be repeated here.

[0075] After obtaining the metal mounting stage 250 from the first seed layer, the back surface of the chip 300 may be adhered to the metal mounting stage 250 by heating or pressing, and the substrate dielectric layer may be compressed to obtain the structure shown in Fig. 7. The effect of adhering the back surface of the chip 300 to the metal mounting stage 250 may be referred to the description of the above structural embodiment, and will not be described again here.

[0076] In addition, in one embodiment, after step S43, steps S44 to S47 are further included, but are not limited thereto. Step S44: Compress a substrate dielectric material onto both sides of the metal heat dissipation module and the metal carrier board to form a third dielectric layer. Step S45: Irradiate the third dielectric layer with a laser to obtain at least one first blind hole whose inside communicates with the front surface of the chip and at least one second blind hole whose inside communicates with the surface of the metal carrier board. Step S46: A hole is mechanically drilled in the third dielectric layer to obtain a through hole penetrating the second frame portion. Step S47: A second seed layer is provided in the first blind hole, the second blind hole, and the through hole, and a pattern electroplating process is used to create a first metal pattern in the first blind hole extending to the outside of the third dielectric layer, a second metal pattern in the second blind hole extending to the outside of the third dielectric layer, and a third metal pattern in the through hole extending to both side surfaces of the third dielectric layer.

[0077] After mounting the chip 300, the substrate dielectric material may be pressed on both sides to obtain a third dielectric layer 400, and the structure shown in Fig. 7 may be obtained. In order to conduct the internal heat to the outside, in this embodiment, a first blind hole 410 is opened at a position corresponding to the front of the chip 300 by laser irradiation, and a second blind hole 420 is opened at a position corresponding to the metal carrier board 200, and the structure shown in Fig. 8 is obtained. The first metal pattern 510 and the second metal pattern 520 are obtained by disposing the second seed layer and electroplating the pattern. For specific effects, the description of the above structural embodiment may be referred to, and will not be repeated here.

[0078] It should be noted that the first blind hole 410 and the second blind hole 420 do not penetrate the package carrier board and can be opened by laser irradiation, while the through hole 430 serves to create the third metal pattern 530 for electrical connection and therefore may be manufactured by mechanical drilling, such that the through hole 430 penetrates the second dielectric layer 240 of the second frame portion 220 and allows electrical connection of both sides of the package carrier board.

[0079] Those skilled in the art will be able to easily devise other embodiments of the present application by considering the specification and practicing the embodiments disclosed herein. The present application is intended to cover any and all modifications, uses, or adaptations of the present application, including common knowledge or customary technical means in the technical fields not disclosed herein, that follow the general principles of the present application.

[0080] It should be understood that the present application is not limited to the exact construction described above and illustrated in the drawings, and various modifications and changes may be made without departing from the scope thereof, which is limited only by the appended claims.

[0081] Although the preferred embodiments of the present invention have been described in detail above, the present invention is not limited to the above embodiments. Those skilled in the art may make various equivalent modifications or substitutions under common conditions that do not go against the spirit of the present invention, and all of these equivalent modifications or substitutions are included within the scope limited by the claims of the present invention. [Explanation of symbols]

[0082] 100 Metal heat dissipation module 110 1st metal layer 120 Copper wall 130 Phase Change Materials 140 Thermally conductive medium layer 150 2nd metal layer 200 Metal Carrier Board 210 First Frame Section 220 Second frame section 230 First dielectric layer 240 Second dielectric layer 250 Metal Stand 300 chips 400 3rd dielectric layer 410 First blind hole 420 Second blind hole 430 through hole 510 First metal pattern 520 Second metal pattern 530 3rd metal pattern

Claims

1. A package carrier board having a highly efficient heat dissipation module embedded therein, a metal carrier board provided with a first frame portion; a metal heat dissipation module including a first metal layer and a second metal layer, a plurality of copper walls arranged in parallel between the first metal layer and the second metal layer being connected, and a cavity formed between two adjacent copper walls being filled with a phase change material, the metal heat dissipation module being embedded in the first frame, and a first dielectric layer being filled in a gap between the metal heat dissipation module and an inner wall of the first frame; The metal heat dissipation module comprises:

1. A package carrier board for embedding a high-efficiency heat dissipation module, comprising: a heat conductive medium layer; the heat conductive medium layer is filled in a heat conduction groove of the metal heat dissipation module; the heat conduction groove is a concave groove having an open side and constituted by the first metal layer, the second metal layer and the copper wall; and the edge of the heat conductive medium layer is flush with the edge of the first metal layer.

2. 2 . The package carrier board for embedding a high-efficiency heat dissipation module according to claim 1 , wherein the first metal layer and / or the second metal layer is provided with a plurality of copper pillars on an inner surface thereof.

3. A package carrier board in which a highly efficient heat dissipation module is embedded, comprising: a metal carrier board provided with a first frame portion; a metal heat dissipation module including a first metal layer and a second metal layer, a plurality of copper walls arranged in parallel between the first metal layer and the second metal layer being connected, and a cavity formed between two adjacent copper walls being filled with a phase change material, the metal heat dissipation module being embedded in the first frame, and a first dielectric layer being filled in a gap between the metal heat dissipation module and an inner wall of the first frame; Chip and a metal mounting base having one side in close contact with the back surface of the chip and the other side in close contact with the metal heat dissipation module and the metal carrier board.

4. When the width of the metal mounting base is equal to or smaller than the width of the first frame portion, one end of the metal mounting base is in close contact with the metal heat dissipation module and the other end is in close contact with the metal carrier board; or A package carrier board for embedding a high-efficiency heat dissipation module as described in claim 3, characterized in that when the width of the metal mounting base is greater than the width of the first frame portion, both ends of the metal mounting base are in close contact with the metal carrier board and cover the outside of the first frame portion.

5. The package carrier board for embedding a high-efficiency heat dissipation module according to claim 3 , wherein the metal carrier board further comprises a second frame portion filled with a second dielectric layer.

6. 6. The package carrier board for embedding a high-efficiency heat dissipation module according to claim 5, wherein a third dielectric layer is further pressed onto the outside of the metal carrier board, the metal heat dissipation module and the chip, the third dielectric layer has a through hole, at least one first blind hole and at least one second blind hole, the inside of the first blind hole is connected to the front surface of the chip, the inside of the second blind hole is connected to the surface of the metal carrier board, and the through hole penetrates the second frame portion.

7. a first metal pattern connected to a front surface of the chip through the first blind hole and extending outside the third dielectric layer; a second metal pattern connected to an outer surface of the metal heat dissipation module through the second blind hole and extending to an outside of the third dielectric layer; 7. The package carrier board as claimed in claim 6, further comprising: a third metal pattern extending through the through hole to both sides of the third dielectric layer.

8. A method for manufacturing a package carrier board having an embedded highly efficient heat dissipation module, comprising the steps of: Obtaining a metal heat dissipation module; providing a metal carrier board with a first frame, embedding the metal heat dissipation module in the first frame, pressing a substrate dielectric material between the metal heat dissipation module and a sidewall of the first frame to obtain a first dielectric layer, and polishing the first dielectric layer to expose the metal carrier board and the metal heat dissipation module; and performing additive manufacturing to obtain a package carrier board; A method for manufacturing a package carrier board in which a highly efficient heat dissipation module is embedded, characterized in that the step of obtaining a metal heat dissipation module includes the steps of: fabricating a plurality of juxtaposed copper walls on a first metal layer, pressing a phase change material into a cavity formed by the two copper walls, and electroplating metal on the upper surfaces of the copper walls to obtain a second metal layer.

9. Prior to the step of compressing a phase change material into the two copper-walled cavities, 9. The method for fabricating a package carrier board with an embedded high-efficiency heat dissipation module as claimed in claim 8, further comprising the step of fabricating a plurality of copper pillars on the first metal layer.

10. Prior to the step of electroplating metal on the top surface of the copper wall to obtain a second metal layer, 10. The method for fabricating a package carrier board with an embedded high-efficiency heat dissipation module as claimed in claim 8, further comprising: pressing a high thermal conductivity medium material onto an area of ​​the first metal layer outside the cavity to form a thermally conductive medium layer, and polishing the edge of the thermally conductive medium layer to be flush with an edge of the first metal layer.

11. The metal carrier board further includes a second frame, and the step of pressing a substrate dielectric material between the metal heat dissipation module and a sidewall of the first frame to obtain a first dielectric layer and polishing the first dielectric layer to expose the metal carrier board and the metal heat dissipation module includes: Pressing a substrate dielectric material onto the metal heat dissipation module and the metal carrier board to form a first dielectric layer between the metal heat dissipation module and a sidewall of the first frame, and forming a second dielectric layer on the second frame; 9. The method for fabricating a package carrier board with an embedded high-efficiency heat dissipation module according to claim 8, further comprising: polishing the first dielectric layer and the second dielectric layer to expose a metal carrier board and the metal heat dissipation module.

12. The step of performing additive manufacturing to obtain a package carrier board includes: A step of disposing a first seed layer on the surface of the metal heat dissipation module and the metal carrier board, in which, when the width of the first seed layer is smaller than the width of the first frame portion, both ends of the first seed layer are located on the metal heat dissipation module and the metal carrier board, respectively, or, when the width of the first seed layer is larger than the width of the first frame portion, both ends of the first seed layer are in close contact with the metal carrier board and cover the outside of the first frame portion; forming a metal mounting platform on the first seed layer by a pattern electroplating process; 12. The method for manufacturing a package carrier board with an embedded high-efficiency heat dissipation module according to claim 11, further comprising: attaching a back surface of the chip to the metal mounting base.

13. After the step of attaching the back surface of the chip to the metal mounting base, Pressing a substrate dielectric material onto both sides of the metal heat dissipation module and the metal carrier board to form a third dielectric layer; irradiating the third dielectric layer with a laser to obtain at least one first blind hole whose inside communicates with a front surface of the chip and at least one second blind hole whose inside communicates with a surface of the metal carrier board; mechanically drilling holes in a third dielectric layer to obtain through holes passing through the second frame; 13. The method for manufacturing a package carrier board having a highly efficient heat dissipation module embedded therein as claimed in claim 12, further comprising the steps of: providing a second seed layer in the first blind hole, the second blind hole, and the through hole; and using a pattern electroplating process to fabricate a first metal pattern in the first blind hole, the first metal pattern extending to the outside of the third dielectric layer, the second blind hole, the second metal pattern extending to the outside of the third dielectric layer, and the through hole, the third metal pattern extending to both side surfaces of the third dielectric layer.

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