Processing equipment having a loading or unloading group and an epitaxial reactor

Abstract

A processing apparatus (900) for an epitaxial reactor (1000) of the type for epitaxially depositing layers of semiconductor material at high temperatures on substrates of semiconductor material for the manufacture of electrical components, comprising a reaction chamber (100) for processing substrates, a transfer chamber (200) adjacent to said reaction chamber (100) for transferring substrates arranged on substrate support devices, a loading / unloading group (300) at least partially adjacent to said transfer chamber (200) arranged to accommodate substrate support devices with one or more substrates, a storage chamber (400) at least partially accommodating the load lock chamber (300), a first storage zone (410) for processed and / or unprocessed substrates, and a second storage zone (410) for substrate support devices without substrates. a storage chamber (300) having a second storage zone (420) for a substrate support device; at least one external robot (500) for transporting processed substrates, unprocessed substrates, and substrate support devices having no substrates between the storage chamber (400) and the loading / unloading group (300); and at least one internal robot (600) for transporting substrate support devices having one or more substrates between the loading / unloading group (300) and the reaction chamber (100) via the transfer chamber (200), wherein the loading / unloading group (300) includes a load lock chamber (300A) and a preparation station (300B) associated with each other.

Description

[Technical field]

[0001] The present invention relates to a new concept epitaxial reactor (see, for example, accompanying FIG. 1), in particular a reactor for epitaxial deposition of silicon carbide onto silicon carbide substrates for electrical and electronic applications. [Background technology]

[0002] Reactors for epitaxial deposition have been known for several decades.

[0003] Reactors for the epitaxial deposition of silicon carbide have also been known for a long time and in the past the applicant himself filed patent applications in this regard. Summary of the Invention

[0004] The main innovations of the inventive epitaxial reactor are the reservoir chamber (e.g. 400 in FIG. 1), the loading / unloading group (e.g. 300 in FIG. 1) and the transfer chamber (e.g. 200 in FIG. 1). These three elements (chambers) together with the reaction chamber (e.g. 100 in FIG. 1) can be considered as part of the so-called "processing equipment" (e.g. 900 in FIG. 1) of the epitaxial reactor (e.g. 1000 in FIG. 1).

[0005] In the reactor according to the invention, the substrate is placed on a "substrate support device" before the treatment process and removed from the "substrate support device" after the treatment process, these two operations being carried out automatically in the storage chamber. The "substrate support device" can be configured to simultaneously support and transport one or more substrates, which may be inserted into special recesses called "pockets", and thus are a kind of "trays" that are inserted into and extracted from the reaction chamber. In particular, a particularly advantageous "substrate support device" for the reactor according to the invention has a disk shape and is shown as an example in the attached FIG. 2 (FIG. 2A is a top view and FIG. 2B is a cross-sectional view), which is described below.

[0006] A general object of the present invention is to improve upon the prior art.

[0007] This object is achieved by a processing device having the technical features set out in the appended claims.

[0008] An aspect of the invention is also an epitaxial reactor, said epitaxial reactor comprising a processing device which is the subject of the appended claims.

[0009] It particularly relates to reactors for the epitaxial deposition at high temperature (in particular above 1,300° C. and below 1,600° C.) of layers of semiconductor material on substrates of semiconductor material for the manufacture of electrical components. Instead, the process pressure is usually comprised between 0.03 atm (=3,000 Pa) and 0.5 atm (50,000 Pa).

[0010] More particularly, the invention relates to a reactor for epitaxial deposition configured for extraction from a reaction chamber (processed) substrate at high temperatures (particularly above 400° C., more particularly above 800° C.).

[0011] More particularly, the invention relates to a reactor for epitaxial deposition configured to introduce an (untreated) substrate into the reaction chamber at high temperatures (particularly above 400° C., more particularly above 800° C.).

[0012] Advantageously, the substrate to be processed and the substrate to be processed are arranged on a "substrate support device".

[0013] The present invention will become more readily apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: [Brief description of the drawings]

[0014] [Figure 1] FIG. 1 shows a schematic diagram (which can be considered a top view) of an embodiment of an epitaxial reactor according to the present invention, showing the processing equipment in particular detail. [Figure 2A] FIG. 2A is a (schematic) top view of one embodiment of a "substrate support apparatus" according to the present invention. [Figure 2B] FIG. 2B is a (schematic) cross-sectional view of the "substrate support apparatus" of FIG. 2A. [Diagram 3] FIG. 3 shows (schematically) an external robot for the containment chamber of an embodiment of an epitaxial reactor according to the invention. [Figure 4A] FIG. 4A is a top view of a tool that can be used in combination with the robot of FIG. [Figure 4B] FIG. 4B is a cross-sectional view of a tool that can be used in combination with the robot of FIG. [Diagram 5] FIG. 5 shows a (schematic) top view of a station for preparing the loading / unloading group of an embodiment of an epitaxial reactor according to the invention. [Figure 6] FIG. 6 shows a schematic diagram (which can be considered as a top view) of an alternative embodiment of an epitaxial reactor according to the invention to that of FIG. 1, with the processing equipment shown in greater detail. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015] As can be readily understood, there are various ways of actually implementing the present invention, and the present invention is defined in its principal advantageous aspects in the appended claims, and is not limited by either the following detailed description or the appended claims.

[0016] Referring to FIG. 1, an embodiment of an epitaxial reactor 1000 according to the present invention is shown, which includes a so-called “processing unit” 900 .

[0017] The most typical and advantageous application of the present invention is in reactors for epitaxially depositing layers of semiconductor material (especially silicon carbide) on substrates of semiconductor material (especially silicon carbide) for the manufacture of electrical components. These are reactors in which the reaction chamber epitaxial deposition process is carried out at high temperatures (especially above 1,300° C. and below 1,800° C.) and pressures typically comprised between 0.03 atm (=3,000 Pa) and 0.5 atm (50,000 Pa), with specific tests being carried out by the applicant at, for example, 1,800° C. and 0.1 atm (10,000 Pa).

[0018] In Fig. 1 an electronic control unit 800 is shown which, depending on its function, can be considered as part of the epitaxial reactor 1000, i.e. the entire system, or of the processing device 900, i.e. its subsystems. In general, it is possible for an epitaxial reactor to comprise several electronic control units, each dedicated to the control of one or more subsystems. In the example of Fig. 1 the electronic control unit 800 is arranged to control at least the treatment device 900, and for this purpose it receives and transmits electrical signals to and from the components of the treatment device 900 (this is represented diagrammatically by two large black arrows).

[0019] Typically, epitaxial reactors, including the epitaxial reactor according to the invention, are equipped with a control console, which may also be considered as part of the control unit of the epitaxial reactor.

[0020] The processing unit 900 consists of four basic components: a reaction chamber 100 for processing a substrate - A transfer chamber 200 adjacent to the reaction chamber 100 a loading / unloading group 300 at least partially adjacent to the transfer chamber 200; a storage chamber 400 which at least partially contains the loading / unloading group 300;

[0021] It should be noted that, alternatively, chambers 200 and 300 may be combined to form a single chamber.

[0022] According to a typical and advantageous embodiment of the invention, the reaction chamber is of the type having an inductively heated "hot wall", in particular configured to be at a "high temperature" even when no epitaxial deposition process is in progress, said "high temperature" being lower than the "process temperature" but higher than the "ambient temperature", which may for example be equal to 30-70% of the "process temperature" expressed in degrees Celsius.

[0023] According to exemplary and advantageous embodiments of the present invention, the reaction chamber may have technical features similar to those shown and described in International Patent Applications WO2004053187, WO2004053188, WO2007088420 and WO2015092525, which are incorporated herein by reference.

[0024] According to an exemplary and advantageous embodiment of the present invention, the reaction chamber comprises a susceptor arrangement consisting of four susceptor elements ("walls") that define a reaction and deposition zone, and furthermore there is another susceptor element ("disk" or "cylinder") that is configured to remain inside the reaction and deposition zone and rotate about its axis, at least during the epitaxial deposition process. This other susceptor element is arranged to provide a rest for a "substrate support device", which on the other hand is arranged to be introduced into the reaction and deposition zone (with one or more unprocessed substrates) before the epitaxial deposition process and to be extracted from the reaction and deposition zone (with one or more processed substrates) after the epitaxial deposition process, advantageously when the "substrate support device" (and the substrate) is still hot, especially at temperatures higher than 500° C. or even higher (e.g. 900° C. or 1,000° C.).

[0025] In the example of FIG. 1, the loading / unloading group 300 advantageously consists of a load lock chamber 300A and a preparation station 300B associated with each other (as will be better understood below), in particular these two elements being separate but close together (e.g. between 0 cm and 10 cm), alternatively (see FIG. 6), they may be integrated with each other.

[0026] In the example of FIG. 1, load lock chamber 300A is located entirely inside chamber 400 and adjacent to chamber 200.

[0027] In the example of FIG. 1, preparation station 300B is located entirely inside chamber 400.

[0028] Typically, epitaxial reactors are equipped with so-called "gate valves" arranged to selectively isolate the reactor chambers. In the case of the reactor of Fig. 1, a first "gate valve" between chambers 100 and 200, a second "gate valve" between chambers 200 and 300A, and a third "gate valve" between chambers 300A and 400 are provided (not shown in the figure), and a door, preferably sealed, is provided (not shown in the figure) to allow an operator to access the interior of chamber 400 to insert / remove substrates and substrate support devices.

[0029] As previously mentioned, the reactor of the present invention contemplates the use of a "substrate support apparatus."

[0030] The "substrate support device" 2000 of Fig. 2 has a recess (shown at 2100 in Fig. 2A), a so-called "pocket", of approximately circular shape to accommodate a substrate (shown in Fig. 2A and shown at 2900 in Fig. 2B) of approximately the same shape and size as the recess, and a thin edge (shown at 2200 in Fig. 2A) projecting radially along its entire periphery to facilitate handling of the "substrate support device". The substrate has a so-called "flat"; in the recess (shown at 2100 in Fig. 2A) there is a plug (shown at 2300 in Fig. 2A) in the "flat" of the substrate.

[0031] The "substrate support device" 2000 of FIG. 2 can also be described by a set of parts as follows (see in particular FIG. 2B): It comprises a circular plate-like part 2500, simply called a "plate", with a remaining partial surface arranged to support a substrate 2900, in particular the remaining partial surface having substantially the same shape and size as the substrate and constituting the bottom of a recess 2100, and a plug (indicated by 2300 in FIG. 2A) conceptually superimposed on the plate 2500. The device 2000 further comprises a first edge portion 2600 which completely surrounds the plate 2500 and extends axially so as to constitute a side wall of the recess 2100 (a small part of this wall is constituted by the plug 2300). The device 2000 finally comprises a second edge portion 2700 which completely surrounds the first edge portion 2600 and extends radially. The second edge portion 2700 can be said to be a flange located around the periphery of the first edge portion 2600. Typically, plate 2500 is at a lower level than second edge 2700. Edge 2200 in FIG. 2A substantially corresponds to second edge 2700 in FIG. 2B. It is noted that the above-mentioned parts can be joined to form one or more single parts, for example parts 2500, 2600 and 2700 can form a single part, or part 2500 can form a first single part and parts 2600 and 2700 can form a second single part. It is further noted that each of the above-mentioned parts can be formed by two or more single parts mechanically coupled together, an example for plate 2500 is described below.

[0032] Particularly advantageously, the plate 2500 is divided into an annular part or portion 2520 and a central part or portion 2540 connected to each other, the annular part or portion 2520 being integral with the first edge part 2600, the central part or portion 2540 being inserted into a hole in the annular part or portion 2520 and can be raised and lowered with respect to the annular part or portion 2520 acting from outside the "substrate support device" 2000 (in particular from below in FIG. 2B) by means of a movable rod, while in the absence of such external action the central part or portion 2540 remains in place by a suitable mechanical connection between the parts or portions 2520 and 2540. When the substrate 2900 is inserted into the recess 2100, by raising and lowering the central part or portion 2540 the substrate 2900 is also raised and lowered.

[0033] Particularly advantageously, the remaining surface of the plate 2500 is configured such that the substrate 2900 is only in contact with a small annular zone of the plate 2500 near the first edge 2600. For example, said small annular zone may have a width of 1-5 mm and / or be radially distanced from the first edge 2600 by 1-3 mm. The distance between the substrate 2900 and the central zone of the plate 2500 may for example be 0.5-1.5 mm.

[0034] Generally, according to the present invention, a processing device includes: - a reaction chamber for processing the substrate (100 in the example of FIG. 1) a transfer chamber (200 in the example of FIG. 1) adjacent to the reaction chamber (100 in the example of FIG. 1) for transferring a substrate placed on a substrate support device; a loading / unloading group (300 in the example of FIG. 1) at least partially adjacent to the transfer chamber (200 in the example of FIG. 1), arranged to accommodate a substrate support device having one or more substrates; a storage chamber (400 in the example of FIG. 1) that at least partially includes a loading / unloading group (300 in the example of FIG. 1) with a first storage zone for processed and / or unprocessed substrates (410 in the example of FIG. 1) and a second storage zone for substrate support devices without substrates (420 in the example of FIG. 1); at least one, in particular only one, external robot (500 in the example of FIG. 1 - the robot is symbolically indicated in this figure) for transferring the treated substrates, the untreated substrates and the substrate support device between the storage chamber (400 in the example of FIG. 1) without substrates and the loading / unloading group (300 in the example of FIG. 1), in particular in the event of, for example, an abnormal operation of the reactor, the external robot can also transfer the substrate support device with the substrate - in particular only one internal robot (600 in the example of Fig. 1, the robot being symbolically indicated in this figure) for transporting a substrate support device with one or more substrates between a loading / unloading group (300 in the example of Fig. 1) and said reaction chamber (100 in the example of Fig. 1) via a transport chamber (200 in the example of Fig. 1).

[0035] The external robot 500 is located at least partially inside the storage chamber 400 and the internal robot 600 is located at least partially inside the transfer chamber 200 .

[0036] In the example of FIG. 1, the external robot 500 is also configured to perform any transfers within the loading / unloading group 300, in particular to transfer a substrate support apparatus having one or more substrates yet to be processed from the preparation station 300B to the load lock chamber "300A" and to transfer a substrate support apparatus having one or more substrates that have already been processed from the "load lock" chamber 300A to the preparation station 300B.

[0037] The above mentioned (chamber) elements, in particular the loading / unloading group, may also have an active role in handling the substrate and / or the "substrate support device", i.e. may comprise means configured to move the substrate.

[0038] In the reactor according to the invention, the substrate is placed on the "substrate support device" before the treatment process and removed from the "substrate support device" after the treatment process, these two operations being automatically performed by an external robot 500 in a storage chamber (400 in the example of FIG. 1). The support device with the untreated substrate is transferred from a loading / unloading group (300 in the example of FIG. 1), in particular from its load lock chamber, to a reaction chamber (100 in the example of FIG. 1) before the treatment process, and the same support device with the untreated substrate is transferred from a reaction chamber (100 in the example of FIG. 1) to a loading / unloading group (300 in the example of FIG. 1), in particular from its load lock chamber, after the treatment process, these two transfer operations being automatically performed by an internal robot 600.

[0039] It should be noted that typically the same "substrate support apparatus" can be used for several processing processes, and in the example described below the same apparatus is used for two processes. Before the first processing process, the robot 500 takes the "substrate support apparatus" from the zone 420 and places it in the station 300B, then places the unprocessed substrate from (at least) the zone 410 on the "substrate support apparatus" located in the station 300B, the robot 500 takes the processed substrate from the "substrate support apparatus" located in the station 300B (at least), and then before the second processing process, takes another unprocessed substrate from (at least) the zone 410 and places it on the "substrate support apparatus" located in the station 300B (e.g. from the subzone 410A). The robot 500 takes the other processed substrate from the "substrate support apparatus" (at least). The external robot 500 is then positioned at station 300B, positioned within zone 410 (e.g., within subzone 410B), and finally, the robot 500 unloads the “substrate support apparatus” from station 300B and positions it elsewhere, e.g., within zone 420. As mentioned above, the external robot 500 is typically also configured to transport substrate support devices on which one or more substrates have not yet been processed from the preparation station 300B to the load lock chamber 300A, and to transport substrate support devices on which one or more substrates have already been processed from the load lock chamber 300A to the preparation station 300B.

[0040] Conceptually, the external and internal robots are similar in that they are capable of performing similar operations. Typically, both comprise an articulated arm consisting of three arm members and a so-called "end effector". It should be noted that the third arm member and the "end effector" of the internal robot may in particular be equipped with a position sensor (e.g. of the "feeler" type) to aid in the positioning of the "end effector", since it is positioned to approach and enter the reaction chamber, which is typically located at very high temperatures (800-1,600 °C).

[0041] Innovations relating to the storage chamber are described below with non-limiting reference to the accompanying drawings (e.g., as shown at 400 in FIG. 1), which is why technical features of example embodiments shown in the drawings are referred to only as "possible."

[0042] The external robot 500 can include an articulated arm 510 configured to handle both processed and unprocessed substrates, as well as substrate support devices.

[0043] The first storage zone 410 can be located on a first side of the storage chamber 400, and the second storage zone 420 can be located on a second side of the storage chamber 400, where in FIG. 1 the second side is opposite the first side, taking into account the position of the external robot 500.

[0044] The first storage zone 410 may be divided into a first sub-zone 410A for unprocessed substrates only and a second sub-zone 410B for processed substrates only.

[0045] The storage chamber 400 may have a third storage zone (not shown in FIG. 1) for support devices with substrates, which may be suitable for use in case of abnormal situations, such as those requiring operator intervention, or the third storage zone may be used for test and / or calibration substrates. It is noted that according to some example embodiments, in case of abnormal situations, support devices with substrates may be stored in the second storage zone 420.

[0046] Advantageously, the electronic control unit of the epitaxial reactor provides the possibility to program the positioning of the unprocessed substrate and / or the processed substrate and / or the substrate support device in the storage chamber, in particular their respective positioning can be set not only horizontally but also vertically, advantageously the positioning of a substrate before processing can be different from the positioning of the same substrate after processing. In this way there is maximum flexibility of positioning.

[0047] Typically, according to the invention, a number of substrates can be placed one above the other, at a distance from each other, in zones or subzones of a storage chamber in a suitable box. In general, a box can accommodate both unprocessed and processed substrates.

[0048] Typically, according to the invention, a number of substrate support devices can be arranged on top of and at a distance from each other in zones or sub-zones of a storage chamber within a suitable box.

[0049] According to a first possibility (not shown), the articulated arm comprises a first arm member and a second arm member, the first arm member hinged to the second arm member, the first arm member having a first end arranged for handling (in particular gripping) an unprocessed substrate, a second end arranged for handling (in particular gripping) a substrate, and an intermediate portion hinged to the second arm member.

[0050] The term "gripping" is used herein to indicate a relatively firm contact between a first part, called "gripping," and a second part, called "holding," while the term "handling" only indicates that the two parts are such that they move together.

[0051] According to a second possibility (illustrated by way of example in FIG. 3 ), the articulated arm 510 comprises a first arm member 512 and a second arm member 516, the first arm member 512 being hinged to the second arm member 516, the first arm member 512 having a first end 513 arranged to handle both processed and unprocessed substrates and a substrate support device, and a second end 514 hinged to the second arm member 516.

[0052] The articulated arm 510 may also include a base 520 .

[0053] The articulated arm 510 may also include a lifting column 511 mounted on a base 520 .

[0054] The articulated arm 510 may also include a third arm member 517 hinged at a first end to the second arm member 516 and at a second end to the lifting column 511 .

[0055] The first arm member 512 may have or be associated with a so-called "end effector" 515, typically at a first end portion 513, which according to the exemplary embodiment (which is exemplary and advantageous) of FIG. 3 may comprise a "fork having two prongs".

[0056] The first end 513 (specifically the "end effector" 515) may be arranged to mate with a tool 519 (see FIG. 4) arranged to grip the substrate support apparatus; said gripping is typically direct and may be by friction or possibly by suction.

[0057] The first end portion 513 (particularly the "end effector" 515) may be arranged to grip a substrate, said gripping being typically direct and may be by friction and suction. Alternatively, the first end portion 513 (particularly the "end effector" 515) may be arranged to mate with another tool (not shown) arranged to grip a substrate, said gripping being typically direct and may be by friction and possibly suction.

[0058] Thanks to the tool, the back side of the substrate cannot be contaminated by particles and / or substances present on the back side of the support device.

[0059] In FIG. 4 an embodiment of a tool generally designated by the reference number 519 is shown. It is essentially a disk, with its upper surface arranged to be in contact with the substrate support device and its lower surface arranged to be in contact with the "end effector" (see in particular FIG. 3). The lower surface preferably has a shoulder 519-1 into which the "end effector", in particular two of its "tips", can be inserted on opposite sides relative to the axis of the tool. The upper surface preferably has a thin recess 519-2 arranged to compensate for any non-perfect planarity of the substrate support device. To allow a stable and accurate positioning of the tool 519, it can typically be provided with an axial hole, for example cylindrical or conical, for example a through hole or a blind hole.

[0060] For handling, in particular for gripping, the articulated arm 510 can be equipped with a suction duct. In FIG. 3 the suction duct 518 is shown inside only the first arm member 512, but alternatively it may be inside the second arm member 516 and / or the third arm member 517. The suction duct must be fluidly connected to a suction generator (not shown in the figures), for example by a flexible tube. The suction duct 518 opens on the surface of the "end effector" 515 and is intended to suck objects that come into contact with the "end effector". This may be a suction localized at a point or preferably distributed over an area (for example a strip extending in a "U" shape in a similar manner to the "end effector" 515).

[0061] The storage chamber 400 can have a rest position 450 for a tool 519. In this case, the external robot 500 can be positioned to take the tool 519 to / from the rest position 450, and in particular, if the robot has to handle a support device, the "end effector" 515 approaches the rest position 450, couples with the tool 519, moves away from the rest position 450, handles the support device, approaches the rest position 450, decouples from the tool 519, and moves away from the rest position 450.

[0062] Innovations relating to loading / unloading groups are described below with non-limiting reference to the accompanying drawings (e.g., as shown at 300 in FIG. 1 ), which is why technical features of example embodiments shown in the drawings are referred to only as "possible."

[0063] The loading / unloading group 300, and in particular the preparation station 300B (as shown in FIG. 5), may include a base 310 for supporting a substrate support apparatus.

[0064] The loading / unloading group 300, and in particular the preparation station 300B (as shown in FIG. 5), may comprise a vertical movement means 320 for raising / lowering one or more substrates disposed on a substrate support apparatus supported by a base 310.

[0065] The vertical movement means 320 may comprise a movable rod arranged to raise / lower a center portion of a substrate support apparatus and a substrate placed thereon (consider for example the movable center portion or side 2540 of the apparatus 2000 in FIG. 2B), where the diameter of the substrate is typically larger than the diameter of the center portion.

[0066] The base 310 can be arranged to rotate the substrate support device (resting on the base) by a (variable) angle, in particular by a (variable) angle ranging from -360° (or more) to 360° (or more).

[0067] The loading / unloading group 300 , and in particular the preparation station 300 B (as shown in FIG. 5), may comprise a horizontal movement means 330 for adjusting the horizontal position of the substrate support device supported by the base 310 .

[0068] The horizontal movement means 330 may comprise at least one rotatable cam (in the embodiment of FIG. 5 three cams 330A, 330B, 330C are advantageously provided) arranged to cause displacement of the substrate support apparatus.

[0069] The loading / unloading group 300 , and in particular the preparation station 300 B (as shown in FIG. 5), may include a cleaning means 340 for the substrate support apparatus supported by the base 310 .

[0070] The cleaning means 340 may for example comprise at least one suction device arranged to cause suction from the top and / or sides of the peripheral area of ​​the substrate support device, in the embodiment of FIG. 5 the suction area being small (e.g. a few millimeters) but alternatively large (e.g. a few centimeters) or very large and at most extending around the entire circumference, in the embodiment of FIG. 5 the suction device being rotatable, a first angular position being used for suction from the edge and a second angular position (shown in FIG. 5) being for rest.

[0071] The processing device 900 may be equipped with a camera 350 (which may be referred to as a "surveillance camera") directed toward a region of interest 360 of the loading / unloading group 300, in particular the preparation station 300B (as shown in FIG. 5), and in particular the camera 350 frame includes at least the support base 310 and thus any substrate support apparatus mounted on the base 310.

[0072] The camera can for example operate in visible light, in which case the natural light of the environment in which the reactor is located can be used or lighting devices can be provided.

[0073] It may be advantageous for the camera to also operate with IR and / or UV light; in this case, corresponding lighting devices are required. The combination of several types of light may be beneficial in reliably recognizing the contours of the various elements of the image captured by the camera.

[0074] The rotation angle of the substrate support device (mounted on the base 310 ) can be arranged to be calculated (eg by the electronic control unit 800 ) starting from an image produced by the camera 350 .

[0075] The displacement of the substrate support device (mounted on the base 310 ) can be arranged to be calculated (eg by the electronic control unit 800 ) starting from an image produced by the camera 350 .

[0076] The loading / unloading group 300, particularly the load lock chamber 300A, may include a cover (not shown) arranged to be selectively opened and closed by rotation thereof, and may include a gate valve (arranged to be selectively opened and closed) between the transfer chamber 200 and the load lock chamber 300A. In particular, when the cover is open, the load lock chamber 300A is in communication with the storage chamber 400, and when the cover 370 is closed, the load lock chamber 300A is not in communication with the storage chamber 400.

[0077] Innovations relating to the transport chamber are described below with non-limiting reference to the accompanying drawings (e.g., as shown at 200 in FIG. 1), which is why technical features of example embodiments shown in the drawings are referred to only as "possible."

[0078] The processing apparatus 900 can include a cooling station 210 adjacent the transfer chamber 200, the cooling station 210 configured to receive a substrate support device having one or more substrates thereon after a processing process.

[0079] The internal robot 600 is a) Typically, the substrate support apparatus with one or more substrates is transferred from the reaction chamber 100 to a cooling station 210 while the support apparatus and substrates are still very hot, and then b) transferring the substrate support apparatus with one or more substrates thereon from the cooling station 210 to the loading / unloading group 300, particularly its load lock chamber 300A, typically after the support apparatus and substrates have sufficiently cooled; It can be arranged as follows: In addition, the internal robot 600 c) transferring the substrate support apparatus carrying one or more substrates from the loading / unloading group 300, in particular from its load lock chamber 300A, to the reaction chamber 100, typically while the substrate support apparatus carrying one or more substrates is being cooled in the cooling station 210; It can be arranged as follows.

[0080] A possible sequence of actions may be, for example, "A", "c", "b".

[0081] The processing apparatus 900 may also include a heating station 220 adjacent the transfer chamber 200, the heating station 220 configured to accommodate a substrate support device having one or more substrates thereon prior to a processing process.

[0082] Station 220 can be used to pre-heat a substrate support apparatus with one or more substrates, but can also be used simply to facilitate and / or speed up the transport operation through transport chamber 200.

[0083] The internal robot 600 is d) transferring a substrate support apparatus carrying one or more substrates from the loading / unloading group 300, particularly its load lock chamber 300A, to the heating station 220, and then e) transferring the substrate support apparatus carrying the one or more substrates from the heating station 220 to the reaction chamber 100; It must be possible to arrange it in such a way that

[0084] A possible sequence of actions can be, for example, "d", "A", "e", "b".

[0085] Further possible innovations are described below.

[0086] Advantageously, the processing device may include a code reading and recognition system (e.g., a barcode or QR code or an alphanumeric code) for reading a code on the substrate and / or the substrate support device, this system is not shown. Such a system may locate (at least partially) in a storage chamber (e.g., the one shown in FIG. 1 with 400). In this way, for example, the reactor may keep a specific track of, for example, substrates that have entered the reactor and / or substrates that are located in the storage chamber and are still to be processed and / or substrates that are located in the storage chamber and have already been processed and / or substrates that have left the reactor. In this way, for example, the reactor may keep a specific track of, for example, substrates that have entered the reactor and / or substrates (and possibly their positions) that are located in the storage chamber and / or substrates that are located in the reaction chamber and / or substrates that have left the reactor. Typically, the reading and recognition system cooperates with an electronic control unit (e.g., the one shown in FIG. 1 with 800) to trace the substrates and / or substrates.

[0087] Advantageously, the processing apparatus may comprise an electronic control unit (e.g., the one indicated with 800 in Fig. 1) configured to store data relating to the use of (at least) one substrate support device, in particular the number and / or duration and / or type / type of processing processes. In this way, for example, if the reactor detects a particular use condition related to the substrate support device, it may decide to avoid its further use and / or to inform an operator of the need to clean or replace it.

[0088] Two or more of the above mentioned innovations may be advantageously combined with one another.

[0089] According to an alternative embodiment to that of Fig. 1 (but very similar, as is evident from the similarity of these two figures), shown in Fig. 6, the loading / unloading group 300 consists of a load lock chamber 300A and a preparation station 300B associated with each other and particularly advantageously integrated with each other. According to this example embodiment, the processing device can be considered to comprise a load lock chamber with the usual two gate valves, but with additional functions with respect to a conventional load lock chamber.

[0090] This "integrated" solution makes it possible to avoid displacement of the "substrate support device" and the substrate by an internal robot, i.e. between the load lock chamber and the preparation station, but complicates the structure of the load lock chamber, or rather the structure of the loading / unloading group.

[0091] In the case of the embodiment example of FIG. 6, the technical features described with reference to FIG. 5 can also be referred to as a preparation station 300B integrated in the loading / unloading group 300.

Claims

1. 1. A processing apparatus for an epitaxial reactor of the type for epitaxially depositing at high temperature a layer of semiconductor material on a substrate of semiconductor material for the manufacture of electrical components, comprising: a reaction chamber for processing a substrate; a transfer chamber adjacent to the reaction chamber for transferring a substrate disposed on a substrate support device; a loading / unloading group at least partially adjacent to the transport chamber, the loading / unloading group being arranged to accommodate a substrate support device having one or more substrates; a storage chamber at least partially housing the loading / unloading group, the storage chamber having a first storage zone for processed and / or unprocessed substrates and a second storage zone for a substrate support device without a substrate; at least one external robot for transporting processed substrates, unprocessed substrates, and substrate support devices without any substrates between the storage chamber and the loading / unloading group; at least one internal robot for transferring a substrate support device having one or more substrates thereon between the loading / unloading group and the reaction chamber through the transfer chamber; Including, the loading / unloading group includes an associated load lock chamber and a preparation station; the loading / unloading group includes a base for supporting a substrate support apparatus, and a vertical movement means for raising and lowering one or more substrates disposed on the substrate support apparatus supported by the base, the vertical movement means including a movable rod configured to raise and lower a center portion of the substrate support apparatus and the substrate placed thereon; Processing unit.

2. The processing apparatus of claim 1 , wherein said load lock chamber and said preparation station are separate but adjacent to one another.

3. The processing apparatus of claim 1 , wherein said load lock chamber and said preparation station are integral with one another.

4. The processing apparatus according to any one of claims 1 to 3, wherein the diameter of the substrate is larger than the diameter of the central portion.

5. The processing apparatus of any one of claims 1 to 4, wherein the base is configured to rotate the substrate support apparatus through an angle.

6. The processing apparatus of claim 5, wherein the base is configured to rotate the substrate support through an angle in the range of -360° to +360°.

7. The processing apparatus according to any one of claims 1 to 5, wherein the loading / unloading group comprises a horizontal moving means for adjusting a horizontal position of a substrate support apparatus supported by the base.

8. 8. The processing apparatus of claim 7, wherein said horizontal movement means comprises at least one rotatable cam arranged to cause displacement of said substrate support apparatus.

9. The processing apparatus according to any one of claims 1 to 8, wherein the loading / unloading group comprises a cleaning means for a substrate support apparatus supported by the base.

10. The processing apparatus of claim 9 , wherein the cleaning means comprises at least one suction device configured to create suction at a peripheral area of ​​the substrate support device.

11. A processing device according to any preceding claim, comprising a camera directed towards an area of ​​interest of the loading / unloading group.

12. Including a camera directed toward an area of ​​interest of the loading / unloading group; The processing device according to claim 5 , wherein the angle is arranged to be calculated starting from an image produced by the camera.

13. Including a camera directed toward an area of ​​interest of the loading / unloading group; The processing device according to claim 8 , wherein the displacement is calculated starting from an image produced by the camera.

14. 14. An epitaxial reactor of the type for epitaxially depositing at temperatures above 1300° C. a layer of semiconductor material on a substrate of semiconductor material for the manufacture of electrical components, the epitaxial reactor comprising a processing device according to any one of claims 1 to 13.

15. An epitaxial reactor according to claim 14 of the type arranged to extract the substrate from the reaction chamber at a temperature above 400°C.

16. An epitaxial reactor according to claim 14 or claim 15 of the type arranged to introduce a substrate into the reaction chamber at a temperature above 400°C.

17. The epitaxial reactor of any one of claims 14 to 16, wherein the unprocessed substrate and the processed substrate are placed on a substrate support device.

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