Plasma processing method and plasma processing apparatus

Abstract

To properly ignite plasma irrespective of processing conditions while suppressing a reduction in throughput.SOLUTION: A plasma processing method comprises a step of performing control based on a processing recipe including a set parameter value for each of a plurality of processing parameters for processing a substrate for each processing step. In the case where it has been determined that it is difficult to stably ignite the plasma by the control based on the processing recipe as a result of referring to predetermined ignition reference data, when performing the processing step including the ignition of the plasma, the control step performs control with part of the plurality of processing parameters replaced with predetermined ignition parameters different from the set parameter values until a predetermined stabilization time for the plasma to stabilize elapses, and performs control with the part of the processing parameters using the originally set parameter values after the stabilization time elapses.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to a plasma processing method and a plasma processing apparatus. [Background technology]

[0002] Patent Document 1 describes a processing apparatus for performing a predetermined process on a semiconductor wafer, which includes a recipe creating device for creating a recipe. The recipe created by the creating device specifies the procedure for performing the predetermined process in the processing apparatus, and includes one or more processing steps. In the recipe, process conditions such as process temperature are input and set as parameters for each processing step. The operation of the processing apparatus is controlled by a computer in accordance with the recipe. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2010-166005 A Summary of the Invention [Problem to be solved by the invention]

[0004] The technology according to the present disclosure appropriately ignites plasma regardless of processing conditions while suppressing a decrease in throughput. [Means for solving the problem]

[0005] One aspect of the present disclosure is a plasma processing method for processing a substrate with plasma using a plasma processing apparatus, the method being comprised of a plurality of processing steps, and including a step of controlling, for each processing step, based on a processing recipe in which parameter values ​​are set for each of a plurality of processing parameters for processing the substrate, and the controlling step includes, when the processing recipe is compared with predetermined ignition reference data and it is determined that it is difficult to stably ignite the plasma using control based on the processing recipe, controlling, when executing the processing step including ignition of the plasma, some of the plurality of processing parameters by replacing them with predetermined ignition parameter values ​​different from the set parameter values ​​until a predetermined stabilization time has elapsed during which the plasma is stabilized, and controlling, after the stabilization time has elapsed, some of the processing parameters using the original set parameter values. Effect of the Invention

[0006] According to the present disclosure, it is possible to appropriately ignite plasma regardless of processing conditions while suppressing a decrease in throughput. [Brief description of the drawings]

[0007] [Figure 1] 1 is a diagram illustrating a schematic configuration of a substrate processing system including a plasma processing apparatus according to an embodiment of the present invention. [Diagram 2] 1 is a vertical cross-sectional view showing an outline of a configuration of a plasma processing apparatus according to an embodiment of the present invention. [Diagram 3] 3 is a flowchart illustrating an example of a substrate processing in the plasma processing apparatus of FIG. [Figure 4] FIG. 2 is a diagram for explaining an example of a processing recipe. [Diagram 5] FIG. 2 is a diagram for explaining an example of a processing recipe. [Figure 6] FIG. 11 is a diagram for explaining an example of an ignition difficulty condition table. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] 2. Description of the Related Art In a manufacturing process of a flat panel display (FPD) such as a liquid crystal display (LCD), a substrate such as a glass substrate is subjected to predetermined processes such as etching and film formation using plasma. Furthermore, a predetermined process using plasma (hereinafter referred to as "plasma process") is performed by a plasma processing apparatus based on a process recipe. The process recipe is made up of a plurality of process steps, and for each process step, parameter values ​​are set for each of a plurality of process parameters for processing a substrate. In other words, the process recipe is made up of a plurality of process steps, and for each process step, process conditions are set for each of a plurality of categories of process conditions for processing a substrate.

[0009] However, there are cases where plasma does not ignite under the processing conditions, i.e., parameter values ​​(e.g., pressure value in the processing vessel of the plasma processing apparatus, etc.) set in the processing recipe. In order to solve this problem, there is a method of inserting an ignition step in the processing recipe when creating the processing recipe, which ignites plasma by, for example, increasing the pressure in the processing vessel to a value higher than that during plasma processing.

[0010] However, with this method, there is a possibility that the ignition step may not be inserted properly. Furthermore, depending on the skill level of an operator, it may be difficult to appropriately set the parameter values ​​in the ignition step. Furthermore, when an ignition step is inserted, the time required for the plasma to stabilize after ignition may differ depending on the parameter values, so the time for the ignition step is set with a margin of error, which results in a decrease in throughput due to the insertion of the ignition step. Furthermore, when an ignition step is inserted, the number of steps increases, making it difficult to manage, for example by making the confirmation work for checking the setting contents more complicated.

[0011] Therefore, the technology disclosed herein appropriately ignites plasma regardless of processing conditions while suppressing a decrease in throughput.

[0012] Hereinafter, a plasma processing method and a plasma processing apparatus according to the present embodiment will be described with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configurations are denoted by the same reference numerals, and duplicated explanations will be omitted.

[0013] <Substrate processing system 1> FIG. 1 is a diagram illustrating a schematic configuration of a substrate processing system including a plasma processing apparatus according to this embodiment. 1, the substrate processing system 1 includes a plasma processing apparatus 2 and an overall controller 3. The number of plasma processing apparatuses 2 included in the substrate processing system 1 may be one or more.

[0014] In the substrate processing system 1, the plasma processing apparatus 2 and the overall controller 3 are communicatively connected via a network N. The plasma processing apparatus 2 and the overall controller 3 may be connected to the network N in a wired or wireless manner.

[0015] The plasma processing apparatus 2 performs processing using plasma of a processing gas, i.e., plasma processing, on a glass substrate G (see FIG. 2 described later) that is rectangular in plan view as a substrate. The plasma processing performed by the plasma processing apparatus 2 includes, for example, etching processing, film formation processing, and ashing processing for FPDs. By these plasma processes, electronic devices such as light-emitting elements and driving circuits for the light-emitting elements are formed on the glass substrate G (hereinafter referred to as "substrate G").

[0016] The overall control device 3 has a display unit 3a, an operation input unit 3b, and a control unit 3c.

[0017] The display unit 3a displays various information and is configured, for example, by a liquid crystal display, an organic EL display, or the like.

[0018] The operation input unit 3b receives operation input from a user, and is configured with, for example, a mouse, a keyboard, etc. The operation input unit 3b is used, for example, when creating a processing recipe.

[0019] The control unit 3c is realized by, for example, a computer, and includes a processing unit 3c1 and a storage unit 3c2. The processing unit 3c1 reads out various programs, such as a program for creating and saving a processing recipe, from the storage unit 3c2 and executes them. The processing unit 3c1 is, for example, a CPU. The above programs may be recorded in a computer-readable storage medium and installed from the storage medium. The storage medium may be temporary or non-temporary. The storage unit 3c2 stores various types of information and is a RAM, a ROM, a HDD, an SSD, or a combination of these.

[0020] <Plasma processing device 2> FIG. 2 is a vertical cross-sectional view showing an outline of the configuration of the plasma processing apparatus 2. As shown in FIG. As shown in the figure, the plasma processing apparatus 2 includes a container body 10 having a bottom and a rectangular cylindrical shape. The container body 10 is made of a conductive material, for example, aluminum, and is electrically grounded. Since corrosive gas is often used in plasma processing, the inner wall surface of the container body 10 may be subjected to a corrosion-resistant coating treatment such as anodizing treatment in order to improve corrosion resistance. An opening is formed on the upper surface of the container body 10. This opening is airtightly closed by a rectangular metal window 20 provided insulated from the container body 10, specifically, by the metal window 20 and a metal frame 14 described later. The space surrounded by the container body 10 and the metal window 20 becomes a processing space K1 in which a substrate G to be processed in plasma processing is located during plasma processing, and the space above the metal window 20 becomes an antenna chamber K2 in which a high-frequency antenna (plasma antenna) 100 described later is arranged. A side wall of the container body 10 is provided with a load / unload port (not shown) for loading / unloading the substrate G into / from the processing space K1, and a gate valve (not shown) for opening and closing the load / unload port.

[0021] A mounting table 30 is provided at the lower side of the processing space K1 so as to face the metal window 20. The mounting table 30 has a table body 31, the upper surface of which serves as a substrate mounting surface on which a substrate G is mounted, and the table body 31 is installed on the bottom surface of the container body 10 via legs 32. Although not shown, the legs 32 are composed of, for example, a support portion that supports the table body 31, a protective ring that covers the side surface of the table body 31, and a focus ring that is mounted on the protective ring and positioned on the peripheral portion of the substrate G.

[0022] The table main body 31 is provided with a base 31a made of a conductive material, for example, aluminum, and an electrostatic chuck 31b that holds the substrate G by electrostatic attraction. A high frequency power supply 41 is connected to the base 31a via a matching box 40. The high frequency power supply 41 supplies high frequency power for bias, for example, high frequency power having a frequency of 3.2 MHz, to the base 31a. This allows ions in the plasma generated in the processing space K1 to be attracted to the substrate G.

[0023] An exhaust port 11 is formed in the bottom wall of the container body 10, and an exhaust unit 50 having a vacuum pump or the like is connected to this exhaust port 11. The processing space K1 is depressurized by this exhaust unit 50. The exhaust unit 50 may be provided for each of the multiple exhaust ports 11, or may be provided commonly to the multiple exhaust ports 11.

[0024] A metal frame 14, which is a rectangular frame made of a metal material such as aluminum, is provided on the upper surface side of the side wall of the container body 10. A seal member 15 for keeping the processing space K1 airtight is provided between the container body 10 and the metal frame 14. The container body 10, the metal frame 14, and the metal window 20 constitute a processing container that is configured to be decompressible and that houses the mounting table 30.

[0025] The metal window 20 is formed, for example, in a rectangular shape when viewed from above. The metal window 20 also functions as a shower head that supplies a processing gas to the processing space K1. For example, the metal window 20 is formed with a number of gas discharge holes 21 that discharge the processing gas downward and a diffusion chamber 22 that diffuses the processing gas, and the gas discharge holes 21 and the diffusion chamber 22 are in communication with each other.

[0026] The diffusion chamber 22 is connected to a process gas supply unit 81 via a gas supply pipe 80. The process gas supply unit 81 includes a flow rate control valve (not shown), an on-off valve (not shown), and the like, and supplies process gases required for etching, film formation, ashing, and the like, to the diffusion chamber 22. The metal window 20 is electrically insulated from the metal frame 14 by an insulating member 23 .

[0027] The space surrounded by the metal window 20, the side wall portion 91, and the top plate portion 90 constitutes an antenna chamber K2, and a high-frequency antenna 100 is disposed inside the antenna chamber K2 so as to face the metal window 20.

[0028] The high frequency antenna 100 is disposed at a distance from the metal window 20 via a spacer (not shown) made of, for example, an insulating material.

[0029] A high frequency power supply 43 is connected to the high frequency antenna 100 via a matching box 42. High frequency power of, for example, 13.56 MHz is supplied to the high frequency antenna 100 from the high frequency power supply 43 via the matching box 42. As a result, during plasma processing, an induced electric field is formed inside the processing space K1 via the metal window 20, and the processing gas discharged from the gas discharge hole 21 is turned into plasma by the induced electric field.

[0030] 2, the plasma processing apparatus 2 is further provided with a control unit U. The control unit U is realized by, for example, a computer, and includes a processing unit U1 and a storage unit U2. The processing unit U1 reads out various programs, such as a program for implementing plasma processing, from the storage unit U2 and executes them. The processing unit U1 is, for example, a CPU. The above programs may be recorded in a computer-readable storage medium and installed from the storage medium. The storage medium may be temporary or non-temporary. The storage unit U2 stores various types of information and is a RAM, a ROM, a HDD, an SSD, or a combination of these.

[0031] <Substrate processing> Next, a substrate processing in the plasma processing apparatus 2 will be described. Fig. 3 is a flow chart for explaining an example of the substrate processing in the plasma processing apparatus 2. Figs. 4 and 5 are diagrams for explaining an example of a processing recipe. Fig. 6 is a diagram for explaining an example of a difficult-to-ignite condition table, which will be described later.

[0032] (Process P1) First, the substrate G is carried into the plasma processing apparatus 2. Specifically, under the control of the control unit U, a gate valve for a load / unload port (not shown) on the side wall of the container body 10 is opened, and the substrate G is loaded into the processing space K1 through the load / unload port and placed on the mounting table 30. The gate valve is then closed. Then, the processing space K1 is evacuated by the exhaust unit 50 until the inside of the processing space K1 reaches a predetermined pressure.

[0033] (Process P2) Then, control is performed based on the process recipe. This process includes, for example, the following steps P2a to P2c. As described above, the process recipe is composed of a plurality of process steps, and a parameter value is set for each of a plurality of process parameters for processing the substrate G. Specifically, as shown in Figures 4 and 5, the process recipe is composed of a plurality of process steps including at least a pressure adjustment step S1 and a plasma processing step S2 following the pressure adjustment step S1. The process parameters and their parameter values ​​in the process recipe are, for example, Pressure Pr in the processing vessel, i.e., in the processing space K1 (the parameter value is the pressure value) Output Wb from the high frequency power supply 41 (the parameter value is the output value) Output Ws from the high frequency power supply 43 (the parameter value is the output value) Whether or not electrostatic adsorption is performed by the electrostatic chuck 31b (the parameter value is "with / without electrostatic adsorption") - Processing gas type (parameter value is the name of the processing gas) - Flow rate of process gas (parameter value is flow rate value) etc.

[0034] (Process P2a) When performing control based on a process recipe, the control unit U first determines whether it is difficult to stably ignite plasma using control based on the target process recipe. This determination is made based on the target process recipe and the ignition condition table T, for example. In other words, the target process recipe is compared with the ignition condition table T. The ignition condition table T is an example of ignition reference data, in which parameter values ​​of process parameters that make it difficult to stably ignite plasma are recorded and stored in the memory unit U2.

[0035] As shown in FIG. 6, the ignition condition table T records, for example, a pressure threshold value Pth (hereinafter referred to as the "plasma stable ignition pressure threshold value") in the processing space K1 at which plasma can be stably ignited for each combination of the processing gas name (information) in the plasma processing step S2 and information on whether electrostatic adsorption is present or absent. In addition, in the ignition condition table T, a stabilization time, which will be described later, is recorded for each of the above combinations.

[0036] In the determination using this ignition condition table T, first, with reference to the ignition condition table T, from the combination of the process gas name and the presence / absence information of electrostatic adsorption in the plasma processing step S2 set in the target process recipe, the plasma stable ignition pressure threshold value Pth in the plasma processing step S2 is extracted.

[0037] Then, based on whether the pressure value Pr2 of the processing space K1 in the plasma processing step S2 set in the target process recipe is less than the extracted plasma stable ignition pressure threshold value Pth, it is determined whether it is difficult to stably ignite the plasma. Specifically, as shown in FIG. 5, when Pr2 < Pth, it is determined that it is difficult to stably ignite the plasma under the control based on the target process recipe, and as shown in FIG. 4, when Pr2 ≥ Pth, it is determined that it is not difficult. Also, when the combination of the process gas name and the presence / absence information of electrostatic adsorption in the plasma processing step S2 set in the target process recipe is not in the ignition condition table T, it is determined that it is not difficult to stably ignite.

[0038] Note that this determination is not limited to after the process P1, and may be performed before the process P1 or during the process P1.

[0039] (Process P2b) Even when it is determined that it is difficult to stably ignite the plasma under the control based on the target process recipe (in the case of YES in Process P2a), each part of the plasma processing apparatus 2 is controlled by the control unit U based on the process recipe. However, when executing the plasma processing step S2 including plasma ignition, the processing parameter value is temporarily replaced with a processing parameter value that ensures reliable ignition of the plasma, that is, an ignition parameter value. Hereinafter, the case where it is determined that it is difficult to stably ignite the plasma under the control based on the target process recipe will be specifically described.

[0040] (Process P2b1) First, the control unit U executes a pressure adjusting step S1 based on a process recipe in accordance with the process recipe. Specifically, in the pressure adjustment step S1, under the control of the control unit U, while the exhaust unit 50 continues to exhaust the processing space K1, a processing gas having a gas name set in the pressure adjustment step S1 of the target processing recipe is supplied from the processing gas supply unit 81 to the processing space K1 via the diffusion chamber 22. At this time, the processing gas is supplied at a flow rate value set in the pressure adjustment step S1 of the target processing recipe. As a result, the inside of the processing space K1 is adjusted to the pressure value Pr1 set in the pressure adjustment step S1 of the target processing recipe. In addition, under the control of the control unit U, the electrostatic chuck 31b electrostatically attracts the wafer W as appropriate in accordance with the settings in the processing recipe. Since the processing recipe is created and stored as described below, the pressure value Pr1 set in the pressure adjustment step S1 of the processing recipe will never be less than the plasma stable ignition pressure threshold value Pth corresponding to the plasma processing step S2 set in the same processing recipe.

[0041] (Process P2b2) Following the pressure adjustment step S1, the controller U executes a plasma processing step S2, including ignition of plasma, based on the processing recipe. In the plasma processing step S2, under the control of the control unit U, while the exhaust unit 50 continues to exhaust the processing space K1 and the processing gas is continuously supplied to the processing space K1, the high frequency power source 43 supplies high frequency power having an output value set in the plasma processing step S2 of the target processing recipe to the high frequency antenna 100. At the same time, the high frequency power source 41 supplies high frequency power having an output value set in the plasma processing step S2 of the target processing recipe to the base 31a of the mounting table 30.

[0042] At this time, if control is performed based on the pressure value Pr2 set in the plasma processing step S2 of the target processing recipe, that is, if control is performed so that the inside of the processing space K1 becomes the pressure value Pr2 set in the plasma processing step S2 of the target processing recipe, since Pr2 < Pth, the plasma does not ignite. Therefore, as described above, based on the determination result in step P2a, the control unit U replaces the pressure value Pr2 set in the plasma processing step S2 of the processing recipe with a predetermined ignition pressure value Pf different from the pressure value Pr2, and controls the exhaust unit 50 etc., so that the pressure value of the processing space K1 becomes the ignition pressure value Pf. The ignition pressure value Pf is an example of an ignition parameter value, and for example, the plasma stable ignition pressure threshold value Pth extracted in step P2a is used. As described above, since the pressure value Pr1 set in the pressure adjustment step S1 of the processing recipe does not become less than the plasma stable ignition pressure threshold value Pth corresponding to the plasma processing step S2 set in the same processing recipe, the above pressure value Pr1 may be used as the ignition pressure value Pf. In this case, the replacement of the pressure value in processing step S2 substantially means continuously maintaining the pressure Pr adjusted to the ignition pressure value Pf in pressure adjustment step S1.

[0043] The replacement of the pressure value Pr2 set in such a plasma processing step S2 is performed until a predetermined stable time Ts required for the ignited plasma to stabilize has elapsed. Specifically, the replacement is performed from the beginning of the plasma processing step S2. The replacement ends when a stable time Ts has elapsed since both the high frequency power from the high frequency power supply 43 and the high frequency power from the high frequency power supply 41 reach the output values ​​set in the plasma processing step S2 of the target processing recipe. The stable time Ts specifies the timing at which the replacement of data used to set the pressure value of the processing space K1 as described above ends, and is described in the ignition condition table T in association with the plasma stable ignition pressure threshold Pth, for example. The stable time Ts is also extracted as a value corresponding to the plasma stable ignition pressure threshold Pth when the plasma stable ignition pressure threshold Pth is extracted in the process P2a. The extracted stable time Ts is used for the replacement as described above.

[0044] As is clear from the above, in this embodiment, when the pressure value Pr2 set in the plasma processing step S2 is replaced, the processing recipe is not rewritten.

[0045] (Process P2b3) After the stabilization time has elapsed, the control unit U performs control based on the pressure value Pr2 originally set in the plasma processing step S2 of the target processing recipe, i.e., controls the pressure in the processing space K1 to the pressure value Pr2 set in the plasma processing step S2 of the target processing recipe. This control is performed until the end of the plasma processing step S2.

[0046] Furthermore, if there are processing steps subsequent to the plasma processing step S2, those processing steps are also performed based on the parameter values ​​set in the target processing recipe. In other words, if a plurality of processing steps are consecutive, it is sufficient to perform the above-mentioned ignition pressure adjustment control only for the first processing step, and it is not necessary to perform the above-mentioned ignition pressure adjustment control for each consecutive processing step.

[0047] (Process P2c) On the other hand, in step P2a, if it is determined that it is not difficult to stably ignite plasma using control based on the target process recipe (if NO), the control unit U performs control based on the process recipe without replacing the ignition pressure value Pf. As a result, each of the process steps constituting the process recipe is executed according to the process recipe.

[0048] (Process P3) After the control based on the process recipe for process P2 is completed, the power supply from the high frequency power sources 41 and 43 and the process gas supply from the process gas supply unit 81 are stopped, and the substrate G is unloaded in the reverse order to that of the loading. This completes the series of substrate processing steps.

[0049] <Example of creating a processing recipe> Next, an example of creating a process recipe according to this embodiment will be described.

[0050] (Process P11) First, the control unit 3c of the overall control device 3 creates a processing recipe based on an input from a user to the operation input unit 3b.

[0051] (Process P12) Next, when the control unit 3c receives an input from the user instructing to save the processing recipe via the operation input unit 3b, it determines whether the combination of the processing gas name and the information on the presence / absence of electrostatic attraction in the plasma processing step S2 set in the created processing recipe is recorded in the ignition condition table T. If not recorded, the created processing recipe is saved, i.e., stored, in the storage unit 3c2.

[0052] (Process P13) On the other hand, in step P12, if the above combination is recorded in the ignition condition table T, it is determined whether the pressure value Pr2 in the plasma processing step S2 of the created processing recipe is less than the plasma stable ignition pressure threshold value Pth corresponding to the above combination recorded in the ignition condition table T. If Pr2≧Pth, the created processing recipe is saved, i.e., stored, in the memory unit 3c2.

[0053] Also, in step P13, when Pr2 < Pth, it is determined whether the pressure value Pr1 in the pressure regulation step S1 of the created processing recipe is equal to or higher than the plasma stable ignition pressure threshold Pth corresponding to the above combination recorded in the ignition condition table T. If Pr1 ≥ Pth, the created processing recipe is stored, i.e., memorized, in the storage unit 3c2.

[0054] If Pr1 < Pth, the created processing recipe is not stored in the storage unit 3c2. For example, under the control of the control unit 3c, a message indicating a warning (specifically, a message indicating that the pressure in the pressure regulation step S1 is inappropriate) is displayed on the display unit 3a. Also, a message prompting a change from the pressure value set in the processing recipe (specifically, a message prompting a change in the pressure value Pr1 in the pressure regulation step S1) may be displayed on the display unit 3a. At that time, the corresponding plasma stable ignition pressure threshold Pth may be displayed, and a message prompting a change so that the pressure value Pr1 in the pressure regulation step S1 becomes larger than the plasma stable ignition pressure threshold Pth may be displayed. After the pressure of the pressure value Pr1 is changed to a pressure value larger than the plasma stable ignition pressure threshold Pth, the processing recipe is stored in the storage unit 3c2. Note that the notification prompting a change in the processing recipe may be made by voice.

[0055] The processing recipe created by this method and stored in the storage unit 3c2 is transmitted to the control unit U at a predetermined timing and stored in the storage unit U2.

[0056] As described above, in this embodiment, when it is determined that it is difficult to stably ignite plasma using the control based on the process recipe, the control is performed as follows. That is, in this example, when performing the plasma processing step S2 including plasma ignition, even if an ignition step is not inserted, some parameters are replaced with ignition parameter values ​​(plasma stable ignition pressure threshold Pth in this example) until the stabilization time has elapsed, and control is performed. After the stabilization time has elapsed, the replacement is stopped for the above-mentioned some parameters, and control is performed using the parameter values ​​set in the original process recipe. In this way, in this embodiment, even if the processing conditions other than the pressure in the plasma processing step S2 are processing conditions that make ignition difficult, replacement with a pressure value that makes ignition easy is automatically performed. In addition, at this time, it is not necessary to insert another step such as an ignition step that leads to a decrease in throughput. Therefore, according to this embodiment, plasma can be appropriately ignited regardless of the processing conditions while suppressing a decrease in throughput. Furthermore, since the replacement with a pressure value that makes ignition easy is automatically performed, plasma can be appropriately ignited regardless of the skill level of the creator of the process recipe.

[0057] In this embodiment, the replacement of the pressure value Pr2 set in the plasma processing step S2 is not terminated and the processing space K1 is not made low pressure immediately after both the high frequency power from the high frequency power supply 43 and the high frequency power from the high frequency power supply 41 reach the output value set in the plasma processing step S2 of the target processing recipe. After a stabilization time has elapsed since both of the above have reached the set output values ​​of the processing recipe and the plasma has stabilized, the replacement is terminated and the processing space K1 is made low pressure. Therefore, according to this embodiment, plasma can be ignited more appropriately.

[0058] (Modification) In the above example, the control unit U uses the ignition condition table T when determining whether it is difficult to stably ignite plasma using control based on the target process recipe. Alternatively, the overall control device 3 may use the ignition condition table T to determine for each process recipe whether it is difficult to stably ignite plasma using control based on the process recipe, and when a similar determination is made by the control unit U, the determination result of the overall control device 3 may be used instead of the ignition condition table T. In this case, for each process recipe, the determination result of the overall control device 3 and the plasma stable ignition pressure threshold Pth and stabilization time corresponding to the process recipe are sent from the overall control device 3 to the control unit 3c and stored in the memory unit U2.

[0059] The embodiments disclosed herein should be considered as illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0060] 2. Plasma processing equipment 3c Control section 10a Container body 20…Metal window 30 Placement table G board T Ignition Condition Table Ts Stabilization time U Control Unit

Claims

1. A plasma processing method for processing a substrate with plasma using a plasma processing apparatus, comprising: The process includes a step of controlling the processing step based on a processing recipe, the processing step being configured with a plurality of processing steps, and a parameter value being set for each of a plurality of processing parameters for processing the substrate, The controlling step includes, when the process recipe is compared with predetermined ignition reference data and it is determined that it is difficult to stably ignite the plasma by control based on the process recipe, performing the process step including the ignition of the plasma, controlling a part of the plurality of process parameters by replacing the part with a predetermined ignition parameter value different from the set parameter value until a predetermined stabilization time for stabilizing the plasma has elapsed; After the stabilization time has elapsed, the part of the processing parameters is controlled using the original parameter values ​​that were set.

2. 2. The plasma processing method according to claim 1, wherein the process recipe is not rewritten when the part of the process parameters is replaced with the ignition parameter values.

3. 3. The plasma processing method according to claim 1, wherein the one of the processing parameters is a parameter related to a pressure in a processing space within a processing vessel that accommodates a substrate in the plasma processing apparatus.

4. 4. The plasma processing method according to claim 3, wherein in a pressure adjustment step which is the processing step immediately preceding the processing step including the ignition of the plasma, a parameter acting on the pressure inside the processing vessel is set to a value equal to or greater than the ignition parameter value.

5. 5. The plasma processing method according to claim 1, wherein the ignition parameter value and the stabilization time are set according to another processing parameter among the plurality of processing parameters, the other processing parameter being different from the part of the processing parameters.

6. 6. The plasma processing method according to claim 5, wherein the other processing parameters are a parameter indicating a type of gas used in the plasma processing, and a parameter indicating whether or not electrostatic adsorption is performed to hold the substrate on a mounting table in the plasma processing apparatus.

7. 7. The plasma processing method according to claim 1, wherein, when it is determined that it is not difficult to stably ignite the plasma by control based on the process recipe, the controlling step performs control without replacing the ignition parameter value.

8. A plasma processing apparatus for processing a substrate with plasma, comprising: a mounting table on which a substrate is placed; a processing vessel configured to be decompressible and accommodating the mounting table therein; A control unit, The control unit is The process is configured with a plurality of processing steps, and control is performed based on a processing recipe in which parameter values ​​are set for each of a plurality of processing parameters for processing the substrate, for each of the processing steps; When it is determined that it is difficult to stably ignite the plasma by control based on the process recipe as a result of checking the process recipe against predetermined ignition reference data, during the process step including ignition of the plasma, performing control by replacing a part of the processing parameters among the plurality of processing parameters with a predetermined ignition parameter value different from the set parameter value until a predetermined stabilization time for stabilizing the plasma has elapsed; After the stabilization time has elapsed, the plasma processing apparatus controls the part of the processing parameters back to the original parameter values ​​that were set.

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