Plasma processing apparatus and plasma processing method

Abstract

The disclosed plasma processing apparatus includes a chamber, a substrate support in the chamber, a plasma generating unit, a bias power supply, an edge ring, a lift mechanism, a switch, and a controller. The bias power supply and / or the high frequency power supply of the plasma generating unit are electrically coupled to a base of the substrate support. The lift mechanism includes a conductive ring, a rod, an actuator, and a connection member, and is configured to move the edge ring up and down while being supported by the conductive ring. The connection member provides an electrical connection between the conductive ring and the base. The switch is configured to be capable of switching between a first state in which the edge ring and the base are electrically coupled to each other and a second state in which the edge ring and the base are electrically isolated from each other. The controller is configured to control the switch.

Description

[Technical field]

[0001] Exemplary embodiments of the present disclosure relate to a plasma processing apparatus and a substrate processing system. [Background technology]

[0002] A plasma processing apparatus is used for plasma processing of a substrate. The plasma processing apparatus includes a chamber and a substrate support. The substrate support is disposed in the chamber. The substrate support includes a base and an electrostatic chuck. A bias power supply is connected to the base, which generates an electric bias for attracting ions from the plasma to the substrate. The electrostatic chuck is configured to support the substrate and an edge ring surrounding the substrate. Patent Document 1 listed below discloses a plasma processing apparatus configured to move the edge ring up and down. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2020-113753 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides techniques for reducing wear of the edge ring. [Means for solving the problem]

[0005] In one exemplary embodiment, a plasma processing apparatus is disclosed. The plasma processing apparatus includes a chamber, a substrate support, a plasma generating unit, a bias power supply, an edge ring, a lift mechanism, a switch, and a controller. The substrate support is disposed in the chamber. The substrate support includes a base and an electrostatic chuck on the base. The plasma generating unit includes a high frequency power supply and is configured to generate a plasma in the chamber. The bias power supply is configured to generate an electrical bias to attract ions from the plasma to a substrate on the substrate support. The bias power supply and / or the high frequency power supply are electrically coupled to the base. The edge ring is conductive and is disposed to surround the substrate on the substrate support. The lift mechanism is configured to move the edge ring up and down. The lift mechanism includes a conductive ring, a rod, an actuator, and a connection member. The conductive ring is electrically coupled to the edge ring while supporting the edge ring placed thereon. The rod extends vertically below the conductive ring. The actuator is configured to move the edge ring up and down via the rod and the conductive ring. The connection member provides an electrical connection between the conductive ring and the base. The switch is configured to be switchable between a first state in which the edge ring and the base are electrically coupled to each other and a second state in which the edge ring and the base are electrically isolated from each other. The controller is configured to control the switch to switch between the first state and the second state. Effect of the Invention

[0006] According to one exemplary embodiment, wear of the edge ring can be suppressed. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram for explaining a configuration example of a plasma processing system. [Diagram 2] FIG. 1 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus. [Diagram 3] FIG. 2 illustrates a substrate support and lift mechanism according to an example embodiment. [Figure 4] FIG. 1 illustrates a substrate support and lift mechanism according to another exemplary embodiment. [Diagram 5] FIG. 2 illustrates a switch and a sensor of a plasma processing apparatus according to an exemplary embodiment. [Figure 6] FIG. 1 illustrates a substrate processing system according to an exemplary embodiment. [Figure 7] FIG. 13 illustrates a substrate support and lift mechanism according to yet another exemplary embodiment. [Figure 8] 1 is a flow diagram illustrating a plasma processing method according to an exemplary embodiment. [Figure 9] 4 is a flow diagram illustrating a plasma processing method according to another exemplary embodiment. [Figure 10] 13 is a flow diagram illustrating a plasma processing method according to yet another exemplary embodiment. [Figure 11] FIG. 1 is a block diagram of a processing circuit for implementing the operations described herein on a computer. [Figure 12] FIG. 2 illustrates a substrate support and lift mechanism according to an example embodiment. [Figure 13] FIG. 13 illustrates a substrate support and lift mechanism according to yet another exemplary embodiment. [Figure 14] FIG. 13 illustrates a substrate support and lift mechanism according to yet another exemplary embodiment. [Figure 15] FIG. 13 illustrates a substrate support and lift mechanism according to yet another exemplary embodiment. [Figure 16] FIG. 13 illustrates a substrate support and lift mechanism according to yet another exemplary embodiment. [Figure 17] FIG. 13 illustrates a substrate support and lift mechanism according to yet another exemplary embodiment. [Figure 18] FIG. 13 illustrates a substrate support and lift mechanism according to yet another exemplary embodiment. [Figure 19] FIG. 13 illustrates a substrate support and lift mechanism according to yet another exemplary embodiment. [Figure 20] FIG. 13 illustrates a substrate support and lift mechanism according to yet another exemplary embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Various exemplary embodiments will now be described in detail with reference to the drawings, in which the same or corresponding parts are designated by the same reference numerals.

[0009] FIG. 1 is a diagram for explaining a configuration example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 described later, and the gas exhaust port is connected to an exhaust system 40 described later. The substrate support unit 11 is disposed in the plasma processing space, and has a substrate support surface for supporting a substrate.

[0010] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), an electron-cyclotron-resonance plasma (ECR plasma), a helicon wave plasma (HWP), a surface wave plasma (SWP), or the like. Also, various types of plasma generating units may be used, including an alternating current (AC) plasma generating unit and a direct current (DC) plasma generating unit. In one embodiment, the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz. Thus, the AC signal includes a radio frequency (RF) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to execute various steps described in the present disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to execute various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is realized, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2 and is read from the storage unit 2a2 by the processing unit 2a1 and executed. The medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0012] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining the configuration example of a capacitively coupled plasma processing apparatus.

[0013] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed in the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a part of a ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from a housing of the plasma processing chamber 10.

[0014] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 may function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Also, at least one RF / DC electrode coupled to an RF power source 31 and / or a DC power source 32 described later may be disposed in the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal described later is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Also, the electrostatic electrode 1111b may function as a lower electrode. Thus, the substrate support 11 includes at least one lower electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0017] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as a brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a.

[0018] The shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The shower head 13 also includes at least one upper electrode. Note that the gas introduction unit may include, in addition to the shower head 13, one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0019] The gas supply 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 through a respective flow controller 22 to the showerhead 13. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 20 may include at least one flow modulation device to modulate or pulse a flow rate of the at least one process gas.

[0020] The power source 30 includes an RF power source 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power source 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power source 31 can function as at least a part of the plasma generating unit 12. In addition, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0021] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0022] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0023] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0024] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular or combination of these pulse waveforms. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have a positive polarity or a negative polarity. Also, the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one period. The first and second DC generating units 32a, 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided in place of the second RF generating unit 31b.

[0025] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0026] Reference is now made to Fig. 3, which illustrates a substrate support and lift mechanism according to an exemplary embodiment. The substrate support 11 and lift mechanism 50 illustrated in Fig. 3 may be employed in a plasma processing apparatus 1.

[0027] As described above, the substrate support 11 is configured to support an edge ring UR (upper edge ring). The edge ring UR is a part of the ring assembly 112. The edge ring UR is disposed to surround the substrate W on the substrate support 11. The edge ring UR is made of a conductive material such as silicon, silicon carbide, tungsten, etc.

[0028] The substrate support 11 includes a base 1110 and an electrostatic chuck 1111 as described above. The base 1110 is an electrically conductive member or includes an electrically conductive member therein. A high frequency power supply and / or at least one bias power supply are electrically coupled to the base 1110 (or its conductive member). The high frequency power supply is a first RF generator 31a and constitutes the plasma generator 12. The at least one bias power supply includes a second RF generator 31b and / or a first DC generator 32a. The at least one bias power supply is configured to generate an electrical bias to attract ions from the plasma to a substrate W on the substrate support 11. The electrical bias includes a sequence of bias RF signals and / or voltage pulses as described above.

[0029] The electrostatic chuck 1111 is disposed on a base 1110. The electrostatic chuck 1111 includes a first portion P1 and a second portion P2. The first portion P1 has a substrate support surface (i.e., a central region 111a) as its upper surface. The first portion P1 and the substrate support surface have a substantially circular planar shape. The central axis of the first portion P1 and the substrate support surface is the central axis of the substrate support part 11. The first portion P1 includes the electrostatic electrode 1111b described above. When a DC voltage is applied from a DC power supply to the electrostatic electrode 1111b, an electrostatic attractive force is generated between the first portion P1 and the substrate W. The first portion P1 holds the substrate W by the generated electrostatic attractive force.

[0030] The second part P2 extends in the circumferential direction around the central axis of the substrate support 11 so as to surround the first part P1. The second part P2 has a ring support surface (i.e., annular region 111b) as its upper surface. The second part P2 and the ring support surface have a substantially annular planar shape. The second part P2 may include at least one electrostatic electrode. The second part P2 may include electrodes BEa and BEb as the at least one electrostatic electrode. The electrodes BEa and BEb constitute a bipolar electrode. A voltage is applied from at least one power supply to the electrodes BEa and BEb so as to generate a potential difference between them. This generates an electrostatic attractive force between the edge ring UR and the second part P2. The second part P2 holds the edge ring UR by the generated electrostatic attractive force.

[0031] In one embodiment, the ring support surface extends below the substrate support surface. In this case, the first portion P1 includes a sidewall surface 111s extending between the substrate support surface and the ring support surface. In this case, an edge ring LR (lower edge ring) may be disposed along the sidewall surface 111s and on the ring support surface. The edge ring LR forms part of the ring assembly 112. The edge ring LR may be made of a conductive material such as silicon, silicon carbide, tungsten, etc. Alternatively, the edge ring LR may be made of an insulating material such as quartz, etc. In this case, the edge ring UR is disposed on the edge ring LR. The ring support surface and the sidewall surface 111s are protected by the edge ring LR.

[0032] 3, the substrate support 11 may further include a cover ring CR and an insulating member IM. The insulating member IM is made of an insulating material such as quartz and has a generally cylindrical shape. The insulating member IM extends in the circumferential direction around the central axis of the substrate support 11 so as to surround the base 1110 and the electrostatic chuck 1111. The cover ring CR has a generally disk shape and is disposed on the insulating member IM so as to surround the edge ring UR.

[0033] The plasma processing apparatus 1 further includes a lift mechanism 50. The lift mechanism 50 includes a conductive ring 51, at least one rod 52, an actuator 53, and at least one connecting member .

[0034] The conductive ring 51 is made of a metal or conductive material such as aluminum, and has a substantially ring shape. The conductive ring 51 extends in a circumferential direction around the central axis of the substrate support 11 so as to surround the base 1110 and the electrostatic chuck 1111 inside the insulating member IM. The conductive ring 51 is configured to be electrically coupled (for example, conductive) to the edge ring UR while supporting the edge ring UR placed thereon. Note that the exposed area on the surface of the conductive ring 51 may be covered with a film that is resistant to plasma. This film may be made of a material such as an aluminum oxide film or yttrium fluoride, and may be formed by a method such as anodizing or thermal spraying.

[0035] The at least one rod 52 extends in the vertical direction below the conductive ring 51. The at least one rod 52 may have insulating properties. In this case, it is possible to suppress the electric bias from flowing into the actuator 53 via the at least one rod 52. In one embodiment, the lift mechanism 50 may include a plurality of rods 52 as the at least one rod 52. The plurality of rods 52 are arranged along the circumferential direction around the central axis of the substrate support 11. The plurality of rods 52 may be arranged at equal intervals along the circumferential direction.

[0036] The actuator 53 is disposed below the at least one rod 52 and is connected to the at least one rod 52. The actuator 53 is configured to move the edge ring up and down via the at least one rod 52 and the conductive ring 51. The actuator 53 may be, for example, a pneumatic or hydraulic cylinder, or a motor.

[0037] The at least one connecting member 54 provides an electrical connection between the conductive ring 51 and the base 1110 (or a conductive member thereof). The at least one connecting member 54 is configured to maintain the electrical connection in response to movement of the conductive ring 51. The at least one connecting member 54 may be configured to be deformable in response to movement of the conductive ring 51. Note that when the lift mechanism 50 includes a plurality of rods 52, the at least one connecting member 54 may include a plurality of connecting members 54.

[0038] In the example shown in Fig. 3, at least one connecting member 54 includes an upper portion 54a, a deformed portion 54b, and a lower portion 54c. The upper portion 54a, the deformed portion 54b, and the lower portion 54c are formed of a conductive material. The upper portion 54a is disposed directly below the conductive ring 51 and is fixed to the conductive ring 51. The upper portion 54a is electrically connected to the conductive ring 51. The lower portion 54c is disposed below the upper portion 54a and is fixed to the base 1110. The lower portion 54c is electrically connected to the base 1110.

[0039] The deformation portion 54b extends between the upper portion 54a and the lower portion 54c. The upper end of the deformation portion 54b is fixed to the upper portion 54a, and the lower end of the deformation portion 54b is fixed to the lower portion 54c. The deformation portion 54b is electrically connected to the upper portion 54a and the lower portion 54c. The deformation portion 54b may be a bellows as shown in FIG. 3.

[0040] At least one rod 52 penetrates the lower portion 54c, passes through the deformed portion 54b, and extends to a region immediately below the upper portion 54a. When the at least one rod 52 is moved upward by the actuator 53, the edge ring UR is moved upward via the upper portion 54a and the conductive ring 51. The edge ring UR is moved upward in accordance with a decrease in its thickness in order to reduce the difference between the upper end position of the plasma sheath on the substrate W and the upper end position of the plasma sheath on the edge ring UR (see FIG. 12). In the plasma processing apparatus 1, even if the edge ring UR is moved upward from the electrostatic chuck 1111, the first state (e.g., a conductive state) in which the base 1110 and the edge ring UR are electrically coupled to each other is maintained by the connection member 54. In the plasma processing apparatus 1, since the edge ring UR is not in an electrically floating state, the edge ring UR can exert a function of reducing the difference between the upper end position of the plasma sheath on the substrate W and the upper end position of the plasma sheath on the edge ring UR.

[0041] The connecting member 54 may be a cylindrical member having a plurality of slits formed in its side wall surface so as to be elastically deformable in the longitudinal direction. For example, the connecting member 54 may be a flexure.

[0042] As described above, the lift mechanism 50 can electrically couple (e.g., conduct) the conductive ring 51 to the edge ring UR in a state where the edge ring UR on the conductive ring 51 is supported by the conductive ring 51. That is, the lift mechanism 50 can form a first state (e.g., a conductive state) in which the edge ring UR and the base 1110 are electrically coupled to each other. Note that in the state shown in FIG. 3, the conductive ring 51 is separated downward from the edge ring UR, but in a state where the conductive ring 51 is in contact with the edge ring UR placed thereon, the first state (e.g., a conductive state) in which the edge ring UR and the base 1110 are electrically coupled to each other is formed.

[0043] The plasma processing apparatus 1 further includes a switch 80 (see FIG. 5). The switch 80 is configured to be able to switch between a first state (e.g., a conductive state) in which the edge ring UR and the base 1110 are electrically coupled to each other and a second state (e.g., a non-conductive state) in which the edge ring UR and the base 1110 are electrically isolated from each other. The switching between the first state and the second state by the switch 80 can be controlled by the controller 2.

[0044] 3, the switch 80 is a lift mechanism 50. Specifically, the lift mechanism 50 can lower the conductive ring 51 downward via the rod 52 by the actuator 53, and separate the conductive ring 51 from the edge ring UR. That is, the lift mechanism 50 can create the second state by separating the conductive ring 51 from the edge ring UR.

[0045] Reference is now made to Fig. 4, which illustrates a substrate support and lift mechanism of another exemplary embodiment. The substrate support 11 and lift mechanism 50 illustrated in Fig. 4 may be employed in the plasma processing apparatus 1. The embodiment of Fig. 4 will be described below in terms of differences from the embodiment of Fig. 3.

[0046] As shown in FIG. 4, the lift mechanism 50 may have a deformation portion 54b that is a contact band instead of a bellows. The upper end of the deformation portion 54b may be fixed to the conductive ring 51. The lower end of the deformation portion 54b may be fixed to the base 1110. The deformation portion 54b shown in FIG. 4 has flexibility in the vertical direction. As shown in FIG. 4, the deformation portion 54b may have a substantially arc shape that bulges outward. In this case, the insulating member IM may provide a recess in which a part of the deformation portion 54b is disposed.

[0047] The plasma processing apparatus 1 including the lift mechanism 50 shown in FIG. 4 further includes a switch 80. The switch 80 may be a part of the lift mechanism 50. The switch 80 includes a switching element and is connected between the connection member 54 and the conductive ring 51 or between the connection member 54 and the base 1110. When the switching element of the switch 80 is in the ON state (closed state), the above-mentioned first state is formed. When the switching element of the switch 80 is in the OFF state (open state), the above-mentioned second state is formed. The switching between the first state and the second state by the switch 80 (i.e., the switching element) may be controlled by the control unit 2.

[0048] Reference will now be made to FIG. 6. FIG. 6 is a diagram showing a substrate processing system according to an exemplary embodiment. The substrate processing system PS shown in FIG. 6 includes a transfer module TM, a plurality of process modules PM1 to PM7 (a plurality of substrate processing modules), and a controller MC. The substrate processing system PS may further include pedestals LPa to LPd, containers FUa to FUd, a loader module LM, an aligner AN, a load lock module LL1, a load lock module LL2, and a stocker module RSM (ring stocker). The number of pedestals, containers, and load lock modules in the substrate processing system PS may be any number equal to or greater than one. The number of process modules in the substrate processing system PS may be any number equal to or greater than two.

[0049] The stages LPa to LPd are arranged along one edge of the loader module LM. The containers FUa to FUd are mounted on the stages LPa to LPd, respectively. Each of the containers FUa to FUd is, for example, a container called a FOUP (Front Opening Unified Pod). Each of the containers FUa to FUd is configured to accommodate a substrate W therein.

[0050] The loader module LM has a transfer chamber. The pressure in the transfer chamber of the loader module LM is set to atmospheric pressure. The loader module LM has a transfer robot LMR. The transfer robot LMR is controlled by a controller MC. The transfer robot LMR is configured to transfer a substrate W through the transfer chamber of the loader module LM. The transfer robot LMR can transfer the substrate W between each of the containers FUa to FUd and the aligner AN, between the aligner AN and each of the load lock modules LL1, LL2, and between each of the load lock modules LL1, LL2 and each of the containers FUa to FUd. The aligner AN is connected to the loader module LM. The aligner AN is configured to adjust (align) the position of the substrate W.

[0051] Each of the load lock modules LL1 and LL2 is connected between the transfer chamber of the loader module LM and the transfer chamber TC of the transfer module TM. Each of the load lock modules LL1 and LL2 provides a preliminary reduced pressure chamber. A gate valve is provided between each of the preliminary reduced pressure chambers of the load lock modules LL1 and LL2 and the transfer chamber of the loader module LM. Furthermore, a gate valve is provided between each of the preliminary reduced pressure chambers of the load lock modules LL1 and LL2 and the transfer chamber TC of the transfer module TM.

[0052] The transfer module TM has a transfer chamber TC (vacuum transfer chamber) and a transfer robot TR. The transfer chamber TC is configured to allow depressurization of the space inside. The transfer robot TR includes a pick TP (end effector). The transfer robot TR may include at least two picks TP. In the illustrated example, the transfer robot TR includes two picks TP. One of the two picks TP is provided above the other. The transfer robot TR is configured to transfer a substrate W placed on any one of the two picks TP via the transfer chamber TC. The transfer robot TR is controlled by a controller MC.

[0053] The transfer module TM may be provided with position detection sensors S11 and S12. The position detection sensors S11 and S12 are provided on a transfer path of the substrate W and the edge ring from the transfer module TM to the process module PM1. The position detection sensors S11 and S12 are used to correct the positions of the substrate W and the edge ring transferred from the transfer module TM to the process module PM1. The position detection sensors S11 and S12 are provided, for example, near a gate valve that separates the transfer module TM and the process module PM1. The position detection sensors S11 and S12 are arranged such that the distance between them is smaller than the outer diameter of the substrate W and smaller than the inner diameter of the edge ring. The transfer module TM may be provided with position detection sensors S21, S22, S31, S32, S41, S42, S51, S52, S61, S62, S71, and S72 in the same manner as the position detection sensors S11 and S12. The position detection sensors S21, S22 are provided on the transport path of the substrate W and edge ring from the transport module TM to the process module PM2. The position detection sensors S31, S32 are provided on the transport path of the substrate W and edge ring from the transport module TM to the process module PM3. The position detection sensors S41, S42 are provided on the transport path of the substrate W and edge ring from the transport module TM to the process module PM4. The position detection sensors S51, S52 are provided on the transport path of the substrate W and edge ring from the transport module TM to the process module PM5. The position detection sensors S61, S62 are provided on the transport path of the substrate W and edge ring from the transport module TM to the process module PM6. The position detection sensors S71, S72 are provided on the transport path of the substrate W and edge ring from the transport module TM to the process module PM7.

[0054] In one embodiment, the transport robot TR is configured to transport an edge ring for a substrate support of any one of the process modules PM1 to PM7. The edge ring is an edge ring UR or a ring set including an edge ring UR and an edge ring LR. The edge ring is placed on any one of the two picks TP and transported. Each pick TP has a sensor TS. The sensor TS is an optical sensor and configured to measure the position of a ring member such as an edge ring on the substrate support.

[0055] Each of the process modules PM1 to PM7 is an apparatus configured to perform a dedicated substrate processing, and includes a processing chamber (substrate processing chamber). A gate valve is provided between the processing chamber and the transfer chamber TC. At least one of the process modules PM1 to PM7 is a plasma processing apparatus 1.

[0056] The stocker module RSM (ring stocker) is connected to the transfer chamber TC via a gate valve. The stocker module RSM has a chamber and can accommodate multiple edge rings therein.

[0057] The controller MC is configured to control each part of the substrate processing system PS. The controller MC may be a computer including a processor, a storage device, an input device, a display device, etc. The controller MC executes a control program stored in the storage device and controls each part of the substrate processing system PS based on recipe data stored in the storage device.

[0058] Reference is now made to FIG. 7, which illustrates a substrate support and a lift mechanism according to yet another exemplary embodiment. The substrate support 11 and the lift mechanism 50 illustrated in FIG. 7 may be employed in a plasma processing apparatus 1. The plasma processing apparatus 1 including the substrate support 11 and the lift mechanism 50 illustrated in FIG. 7 may be employed as a process module of a substrate processing system PS. The embodiment of FIG. 7 will be described below in terms of differences from the embodiment of FIG. 3.

[0059] 7, the substrate support 11 provides a plurality of through holes passing therethrough along a vertical direction. The plurality of through holes in the substrate support 11 are arranged along a circumferential direction around a central axis of the substrate support 11. The plurality of through holes in the substrate support 11 may be arranged at equal intervals. Additionally, the edge ring LR is formed with a plurality of through holes that are aligned with the plurality of through holes in the substrate support 11, respectively.

[0060] 7, the edge ring UR can be lifted upward from the substrate support 11 by a lift mechanism 60. The lift mechanism 60 includes a plurality of lift pins 61 and an actuator 62. The plurality of lift pins 61 are inserted into a plurality of through holes in the substrate support 11, respectively. The actuator 62 is connected to the plurality of lift pins 61 and configured to move the plurality of lift pins 61 up and down.

[0061] When the lift pins 61 are moved upward by the actuator 62 with the upper ends of the lift pins 61 in contact with the edge ring UR, the edge ring UR is lifted upward from the substrate support 11. In this state, the transport robot TR moves the pick TP below the edge ring UR. Then, the edge ring UR is handed over to the pick TP as the lift pins 61 move downward. Thereafter, the edge ring UR is transported to the stocker module RSM by the transport robot TR.

[0062] Then, the replacement edge ring UR is transferred from the stocker module RSM into the chamber 10 by the transfer robot TR. Then, the multiple lift pins 61 are moved upward by the actuator 62, so that the edge ring UR is handed over to the multiple lift pins 61. Then, the pick TP moves to the outside of the chamber 10, and the multiple lift pins 61 move downward. As a result, the replacement edge ring UR is placed on the substrate support 11.

[0063] The plasma processing apparatus 1 including the lift mechanism 50 shown in FIG. 7 includes a lift mechanism 60 as a switch 80. In the lift mechanism 60, all the lift pins 61 are made of an insulating material. When the lift mechanism 60 positions all the lift pins 61 such that the edge ring UR is supported on the conductive ring 51 and electrically coupled to the conductive ring 51, the above-mentioned first state is created. When the lift mechanism 60 lifts the edge ring UR upward from the conductive ring 51 and separates it from the conductive ring 51, the above-mentioned second state is created.

[0064] The plasma processing apparatus 1 may include another lift mechanism instead of or in addition to the lift mechanism 60. The another lift mechanism may be configured to lift the ring set including both the edge ring UR and the edge ring LR upward from the substrate support 11 and / or the conductive ring 51.

[0065] The above-described switch 80 can switch between the first state and the second state as necessary. When the second state is formed, the electric bias and / or the source RF signal is not supplied from the base 1110 to the edge ring UR via the conductive ring 51. When the second state is formed, the switch 80 can suppress wear of the edge ring UR due to chemical species from the plasma by performing plasma processing in the chamber 10.

[0066] Reference is now made to Fig. 5, which illustrates a switch and a sensor of a plasma processing apparatus according to an exemplary embodiment. The plasma processing apparatus 1 according to various exemplary embodiments may further include at least one sensor 90, as illustrated in Fig. 5. The at least one sensor 90 is configured to measure the amount of deposition on the edge ring UR.

[0067] The sensor 90 may include at least one selected from the group consisting of a sensor 91, a sensor 92, and a sensor 93. The sensor 91 is an optical emission spectrometer and is configured to analyze optical emission of the plasma in the chamber 10. The sensor 91 measures different optical emission intensities at a predetermined wavelength when deposits are present on the edge ring UR and when deposits have been removed from the edge ring UR. Therefore, the sensor 91 can estimate the amount of deposits on the edge ring UR from the measured optical emission intensities.

[0068] The sensor 92 is an optical sensor including a light source such as a laser, and is configured to detect the thickness of the deposit on the edge ring UR. The sensor 92 is disposed, for example, on the ceiling of the chamber 10. The sensor 92 allows the amount of deposit on the edge ring UR to be estimated from the measured thickness of the deposit.

[0069] The sensor 93 is an impedance measuring device and is connected to the base 1110. The impedance on the base 1110 side as viewed from the sensor 93 changes depending on the amount of deposits on the edge ring UR. The sensor 93 makes it possible to estimate the amount of deposits on the edge ring UR from the measured impedance.

[0070] Hereinafter, plasma processing methods according to various exemplary embodiments will be described with reference to Figs. 8 to 10. Each of Figs. 8 to 10 is a flow chart showing a plasma processing method according to an exemplary embodiment. The plasma processing method shown in each of Figs. 8 to 10 can be performed using a plasma processing apparatus 1. In the plasma processing method, each part of the plasma processing apparatus 1 can be controlled by a control unit 2.

[0071] Please refer to Fig. 8. The plasma processing method (hereinafter, referred to as "method MT") shown in Fig. 8 starts with step STa. In step STa, the control unit 2 reads a recipe.

[0072] In the subsequent process STJ, the control unit 2 determines whether the loaded recipe is a product recipe. The product recipe is a recipe for plasma processing of the substrate W on the substrate support 11. If it is determined in the process STJ that the loaded recipe is a product recipe, the control unit 2 controls the switch 80 to create the above-mentioned first state in process STb. On the other hand, if it is determined in the process STJ that the loaded recipe is not a product recipe, the control unit 2 controls the switch 80 to create the above-mentioned second state in process STc.

[0073] In the next step STd, the control unit 2 executes a plasma process specified in the loaded recipe. If the loaded recipe is a product recipe, the control unit 2 controls each part of the plasma processing apparatus 1 to perform a plasma process, such as plasma etching, on the substrate W on the substrate support 11 in step STd while maintaining the above-mentioned first state. On the other hand, if the loaded recipe is not a product recipe, the control unit 2 controls each part of the plasma processing apparatus 1 to perform plasma cleaning of the chamber 10 in step STd while maintaining the above-mentioned second state.

[0074] Refer to FIG. 9. The plasma processing method shown in FIG. 9 (hereinafter, referred to as "method MTA") starts with step STa, similar to method MT. In the subsequent step STAd, the control unit 2 controls each part of the plasma processing apparatus 1 to start the execution of the plasma processing specified in the loaded recipe. This plasma processing may be plasma cleaning of the chamber 10. In one example, this plasma processing is plasma cleaning for removing carbon-containing deposits on the edge ring UR. The gas used in this plasma processing includes a gas capable of removing deposits, for example, an oxygen-containing gas. At the start of the plasma processing, the control unit 2 may control the switch 80 to form the above-mentioned first state.

[0075] In the subsequent step STAJ, the control unit 2 determines whether or not electrical coupling between the edge ring UR and the base 1110 is necessary. Specifically, when the amount of deposits on the edge ring UR specified by the measurement by at least one sensor 90 is greater than a threshold value, the control unit 2 determines that electrical coupling between the edge ring UR and the base 1110 is necessary in the step STAJ. On the other hand, when the amount of deposits on the edge ring UR specified by the measurement by at least one sensor 90 is equal to or less than the threshold value, the control unit 2 determines that electrical coupling between the edge ring UR and the base 1110 is not necessary in the step STAJ.

[0076] Note that, in the case where the emission intensity of the plasma at a predetermined wavelength (e.g., the wavelength of emission based on carbon) measured by the sensor 91 is equal to or less than a threshold, it may be determined in the step STAJ that the amount of deposits on the edge ring UR is equal to or less than a threshold. Alternatively, in the case where the thickness of the deposits on the edge ring UR measured by the sensor 92 is equal to or less than a threshold, it may be determined in the step STAJ that the amount of deposits on the edge ring UR is equal to or less than a threshold. Alternatively, in the case where the impedance measured by the sensor 93 is equal to or less than a threshold, it may be determined in the step STAJ that the amount of deposits on the edge ring UR is equal to or less than a threshold.

[0077] When it is determined in step STAJ that electrical coupling between the edge ring UR and the base 1110 is necessary, the control unit 2 controls the switch 80 to form the above-mentioned first state in step STb. On the other hand, when it is determined in step STAJ that electrical coupling between the edge ring UR and the base 1110 is not necessary, the control unit 2 controls the switch 80 to form the above-mentioned second state in step STc.

[0078] In the next step STAJb, the control unit 2 determines whether or not to end the process. If it is determined not to end the process in step STAJb, the plasma process started in step STAd is continued, and the process from step STAJ is repeated. On the other hand, if it is determined to end the process in step STAJb, the control unit 2 ends the method MTA.

[0079] Please refer to Fig. 10. The plasma processing method shown in Fig. 10 (hereinafter referred to as "method MTB") starts with step STa, similar to method MT. Then, in method MTB, a determination is made as to step STJ, similar to method MT. Note that the edge ring UR is placed on the substrate support 11 and the conductive ring 51 at the start of method MTB or immediately after step STJ.

[0080] When it is determined in the process STJ that the read recipe is the product recipe, the control unit 2 controls the switch 80 in a process STb1 to create the above-mentioned first state.

[0081] In the subsequent step STBd1, the control unit 2 controls each part of the plasma processing apparatus 1 to execute a first step specified in the loaded recipe. The first step includes plasma etching for forming a recess in the substrate W on the substrate support 11 as a plasma process specified in the recipe. The gas used in this plasma etching may include a fluorocarbon and / or a hydrofluorocarbon.

[0082] In the subsequent step STc1, the control unit 2 controls the switch 80 to create the above-mentioned second state.

[0083] In the subsequent step STBd2, each part of the plasma processing apparatus 1 is controlled to perform an ashing process specified in the loaded recipe. In the ashing process, deposits are removed from the substrate W on the substrate support 11 by chemical species from the plasma generated from the ashing gas. The ashing gas may contain an oxygen-containing gas.

[0084] In the following step STb2, the control unit 2 controls the switch 80 to create the above-mentioned first state.

[0085] In the subsequent step STBd3, the control unit 2 controls each part of the plasma processing apparatus 1 to execute a second step specified in the loaded recipe. The second step includes plasma etching for increasing the depth of the recess in the substrate W on the substrate support 11 as a plasma process specified in the recipe. The gas used in this plasma etching may contain fluorocarbon and / or hydrofluorocarbon, similar to the gas used in the first step.

[0086] Moreover, if it is determined in the above-mentioned process STJ that the read recipe is not the product recipe, the control unit 2 controls the switch 80 in a process STc3 to create the above-mentioned second state.

[0087] In the subsequent step STBd4, the control unit 2 controls each part of the plasma processing apparatus 1 to perform the plasma processing specified in the loaded recipe, i.e., the first plasma cleaning of the chamber 10. The gas used in step STBd4 may contain an oxygen-containing gas.

[0088] In the following step STb3, the control unit 2 controls the switch 80 to form the above-mentioned first state.

[0089] In the subsequent step STBd5, the control unit 2 controls each part of the plasma processing apparatus 1 to perform the plasma processing specified in the loaded recipe, i.e., the second plasma cleaning of the chamber 10. The gas used in step STBd5 may contain an oxygen-containing gas.

[0090] In the subsequent step STf, the edge ring on the substrate support 11 is replaced with an edge ring transferred from the stocker module RSM by the transfer robot TR.

[0091] In the subsequent step STc4, the control unit 2 controls the switch 80 to form the above-mentioned second state.

[0092] In the subsequent step STBd6, the control unit 2 controls each part of the plasma processing apparatus 1 to perform the plasma processing specified in the loaded recipe, i.e., the seasoning processing of the chamber 10. In step STBd6, plasma is generated in the chamber 10 from a gas for seasoning.

[0093] Reference will now be made to Figures 13 and 14 in addition to Figure 8. Each of Figures 13 and 14 is a diagram showing a substrate support and a lift mechanism according to yet another exemplary embodiment. The substrate support 11 and the lift mechanism 50 shown in Figures 13 and 14 may be employed in a plasma processing apparatus 1. Each configuration in the embodiment of Figures 13 and 14 is substantially similar to the corresponding configuration in the embodiment of Figure 4. The plasma processing apparatus 1 including the substrate support 11 and the lift mechanism 50 shown in Figures 13 and 14 may be used in a method MT.

[0094] As described above, when the plasma processing specified by the recipe is the plasma processing for the substrate W on the substrate support 11, the control unit 2 controls the switch 80 to form the above-mentioned first state in step STb. In this case, the control unit 2 controls each part of the plasma processing apparatus 1 to perform the plasma processing for the substrate W in step STd. When the plasma processing for the substrate W is performed in step STd while the first state formed in step STb is maintained and the edge ring UR is lifted upward from the edge ring LR (see FIG. 13), a deposit may be formed on the lower surface of the edge ring UR and / or the upper surface (the ring support surface or the upper surface of the edge ring LR) facing the lower surface of the edge ring UR. The deposit may include a component contained in the processing gas used in the plasma processing in step STd. The deposit may be formed of a carbon-containing substance. Alternatively, the deposit may be formed of a metal-containing substance.

[0095] As described above, when the plasma processing specified by the recipe is plasma cleaning of the chamber 10, the control unit 2 controls the switch 80 to form the above-mentioned second state in step STb. In this case, the control unit 2 controls each part of the plasma processing apparatus 1 to perform plasma cleaning in step STd. The control unit 2 also controls the lift mechanism 50 to set the height direction position of the edge ring UR when the plasma cleaning is being performed (see FIG. 14) to a position higher than the height direction position of the edge ring UR when the above-mentioned plasma processing is being performed on the substrate W (see FIG. 13). This allows active species from the plasma to be supplied to the space between the lower surface of the edge ring UR and the upper surface (the ring support surface or the upper surface of the edge ring LR) facing the lower surface of the edge ring UR, facilitating the removal of the above-mentioned deposits.

[0096] When the deposit is made of a carbon-containing material, in the plasma cleaning in step STd, a source RF signal may be supplied from the first RF generating unit 31a to generate plasma from the cleaning gas. In this case, the level of the bias signal from the bias power supply, i.e., the power level of the bias RF signal or the level of the voltage pulse (potential difference with respect to a reference potential (e.g., 0 V) ​​of the voltage pulse) may be set to zero or a low level. Also, when the deposit is made of a carbon-containing material, in the plasma cleaning in step STd, an oxygen-containing gas may be supplied into the chamber 10 as a cleaning gas to generate plasma.

[0097] When the deposit is made of a metal-containing material, in the plasma cleaning in step STd, a source RF signal may be supplied from the first RF generator 31a to generate plasma from the cleaning gas. In this case, the level of the bias signal from the bias power supply, i.e., the power level of the bias RF signal or the level of the voltage pulse (potential difference with respect to a reference potential (e.g., 0 V) ​​of the voltage pulse) may have a high level set to remove the deposit by ion sputtering.

[0098] Reference is now made to FIG. 15. FIG. 15 is a diagram showing a substrate support and a lift mechanism according to yet another exemplary embodiment. The lift mechanism 50 shown in FIG. 15 can be employed in the plasma processing apparatus 1 in place of the lift mechanism 50 shown in FIG. 13 and FIG. 14. The method MT can be performed in the plasma processing apparatus 1 including the lift mechanism 50 shown in FIG. 15 in the same manner as in the plasma processing apparatus 1 including the lift mechanism 50 shown in FIG. 13 and FIG. 14. The lift mechanism 50 shown in FIG. 15 will be described below in terms of differences from the lift mechanism 50 shown in FIG. 13 and FIG. 14.

[0099] As shown in FIG. 15, the edge ring UR includes an inner periphery URi and an outer periphery URo. The inner periphery URi extends inside the outer periphery URo and is disposed above the second portion P2. The outer periphery URo is positioned on the conductive ring 51 while being supported by the conductive ring 51. The outer periphery URo has a vertical length set so as to hide the conductive ring 51 from the space above the substrate support 11 when the plasma cleaning is performed in the process STd. That is, the outer periphery URo has a vertical length set so as to be interposed between the space above the substrate support 11 and the conductive ring 51 when the plasma cleaning is performed in the process STd. This protects the conductive ring 51 from the plasma generated in the process STd.

[0100] Reference is now made to FIG. 16. FIG. 16 is a diagram showing a substrate support and a lift mechanism according to yet another exemplary embodiment. The lift mechanism 50 shown in FIG. 16 can be employed in the plasma processing apparatus 1 in place of the lift mechanism 50 shown in FIG. 13 and FIG. 14. The method MT can be performed in the plasma processing apparatus 1 including the lift mechanism 50 shown in FIG. 16 in the same manner as in the plasma processing apparatus 1 including the lift mechanism 50 shown in FIG. 13 and FIG. 14. The lift mechanism 50 shown in FIG. 16 will be described below in terms of differences from the lift mechanism 50 shown in FIG. 13 and FIG. 14.

[0101] The lift mechanism 50 shown in FIG. 16 further includes a coating 51c. The coating 51c covers the surface of the conductive ring 51 to protect the conductive ring 51 from plasma. The coating 51c is made of a plasma-resistant material (e.g., yttria). The coating 51c formed between the edge ring UR and the conductive ring 51, i.e., the coating 51c formed on the upper surface of the conductive ring 51, may have a capacitance of 10,000 pF or more for electrical coupling (capacitive coupling) between the edge ring UR and the base 1110.

[0102] Reference will be made to Figs. 17 and 18. Each of Figs. 17 and 18 is a diagram showing a substrate support and a lift mechanism according to yet another exemplary embodiment. The substrate support 11 and the lift mechanism 50 shown in Figs. 17 and 18 can be adopted in the plasma processing apparatus 1 instead of the substrate support 11 and the lift mechanism 50 shown in Figs. 13 and 14. The method MT can be performed in the plasma processing apparatus 1 including the substrate support 11 and the lift mechanism 50 shown in Figs. 17 and 18 in the same manner as the plasma processing apparatus 1 including the substrate support 11 and the lift mechanism 50 shown in Figs. 13 and 14. The substrate support 11 and the lift mechanism 50 shown in Figs. 17 and 18 will be described below in terms of differences from the substrate support 11 and the lift mechanism 50 shown in Figs. 13 and 14.

[0103] As shown in FIGS. 17 and 18, the lift mechanism 50 further includes a protective member 51p. The protective member 51p has a ring shape extending in a circumferential direction around the central axis of the substrate support 11. The protective member 51p is conductive and is mounted on the conductive ring 51 so as to protect the conductive ring 51 from plasma. The protective member 51p is made of a material having plasma resistance. The protective member 51p may be made of the same material as the edge ring UR. In this embodiment, when the edge ring UR is supported by the conductive ring 51, the edge ring UR is electrically coupled to the conductive ring 51 via the protective member 51p.

[0104] 17 and 18, the plasma processing apparatus 1 further includes a lift mechanism 70. The lift mechanism 70 includes a plurality of lift pins 71 and an actuator 72. The plurality of rods 52 of the lift mechanism 50 shown in FIG. 17 and the plurality of lift pins 71 shown in FIG. 18 may be alternately arranged along the circumferential direction with respect to the central axis of the substrate support 11. The plurality of rods 52 and the plurality of lift pins 71 may be arranged at equal intervals.

[0105] The multiple lift pins 71 can be inserted into multiple through holes that vertically penetrate the conductive ring 51 and the protective member 51p. The actuator 72 is configured to move the multiple lift pins 71 up and down under the control of the control unit 2. The above-mentioned first state is created when the lift mechanism 70 retracts the multiple lift pins 71 to a lower position so that the upper ends of the multiple lift pins 71 do not come into contact with the edge ring UR. In addition, the above-mentioned second state is created when the lift mechanism 70 lifts the edge ring UR upward from the protective member 51p by the multiple lift pins 71. Therefore, the lift mechanism 70 constitutes a switch 80.

[0106] As described above, when the plasma processing specified by the recipe is the plasma processing on the substrate W on the substrate support 11, the control unit 2 controls the lift mechanism 70, i.e., the switch 80, to form the above-mentioned first state in step STb. In this case, the control unit 2 controls each part of the plasma processing apparatus 1 to perform the plasma processing on the substrate W in step STd.

[0107] Furthermore, when the plasma processing specified by the recipe is plasma cleaning of the chamber 10, the control unit 2 controls the lift mechanism 70, i.e., the switch 80, to form the above-mentioned second state in step STb. In this case, the control unit 2 controls each part of the plasma processing apparatus 1 to perform plasma cleaning in step STd. Furthermore, the control unit 2 controls the lift mechanism 70 to set the height position of the edge ring UR when the plasma cleaning is being performed to a position higher than the height position of the edge ring UR when the above-mentioned plasma processing is being performed on the substrate W. As a result, active species are supplied from the plasma to the space between the lower surface of the edge ring UR and the upper surface (the ring support surface or the upper surface of the edge ring LR) facing the lower surface of the edge ring UR, facilitating the removal of the above-mentioned deposits.

[0108] Reference will be made to Figs. 19 and 20. Each of Figs. 19 and 20 is a diagram showing a substrate support and a lift mechanism according to yet another exemplary embodiment. The substrate support 11 and the lift mechanism 50 shown in Figs. 19 and 20 can be adopted in the plasma processing apparatus 1 instead of the substrate support 11 and the lift mechanism 50 shown in Figs. 13 and 14. The method MT can be performed in the plasma processing apparatus 1 including the substrate support 11 and the lift mechanism 50 shown in Figs. 19 and 20 in the same manner as in the plasma processing apparatus 1 including the substrate support 11 and the lift mechanism 50 shown in Figs. 13 and 14. The substrate support 11 and the lift mechanism 50 shown in Figs. 19 and 20 will be described below in terms of differences from the substrate support 11 and the lift mechanism 50 shown in Figs. 13 and 14.

[0109] 19 and 20, the electrostatic chuck 1111 has an electrode BEc built therein below the edge ring UR, i.e., in the second portion P2. The electrode BEc is electrically connected to the base 1110 via the switching element 81.

[0110] When performing plasma processing on the substrate W in step STd, the control unit 2 may set the state of the switching element 81 to the OFF state (open state) to cut off the electrical connection between the electrode BEc and the base 1110. When performing plasma processing on the substrate W in step STd, the control unit 2 controls the switch 80 (switching element) to form the above-mentioned first state.

[0111] When performing plasma cleaning of the chamber 10 in the step STd, the control unit 2 controls the lift mechanism 50 to set the position of the edge ring UR in the height direction to a position higher than the position of the edge ring UR in the height direction when the above-mentioned plasma processing is performed on the substrate W. When performing plasma cleaning of the chamber 10 in the step STd, the control unit 2 sets the state of the switching element 81 to the ON state (closed state) to establish an electrical connection between the electrode BEc and the base 1110. When performing plasma cleaning of the chamber 10 in the step STd, the control unit 2 controls the switch 80 (switching element) to form the above-mentioned second state and to connect the edge ring UR to ground via the conductive ring 51. As a result, a high-frequency electric field according to the source RF signal and / or the bias RF signal is formed between the electrode BEc and the edge ring UR. As a result, plasma is generated from the cleaning gas in the space between the lower surface of the edge ring UR and the upper surface (the ring support surface or the upper surface of the edge ring LR) facing the lower surface of the edge ring UR. As a result, plasma for removing deposits can be locally formed in the space. The configurations of the embodiments shown in FIGS. 19 and 20 can also be adopted in the embodiments shown in FIGS.

[0112] Below, examples of processing circuits that can be used as one or more processing circuits in the plasma processing apparatus 1, such as the control unit 2, and / or one or more processing circuits in the substrate processing system PS, such as the control unit MC, are described. FIG. 11 is a block diagram of a processing circuit that performs the operations described herein on a computer. FIG. 11 illustrates a processing circuit 130 that can be used to control a control process on any computer. The descriptions or blocks in the flow chart represent modules, segments, or portions of code that include one or more executable instructions for performing certain logical functions or steps of the process. As will be understood by those skilled in the art, other examples having functions that can be performed in a different order than the order shown or described, such as substantially simultaneously or in reverse order, depending on the functionality involved, are included within the scope of the exemplary embodiments of the present disclosure. The various elements, features, and processes described herein may be used independently of each other or may be combined in various ways. All possible combinations and subcombinations may be included within the scope of the present disclosure.

[0113] In Fig. 11, the processing circuitry 130 includes a CPU 1200 for performing one or more control processes described above / below. Processing data and instructions may be stored in a memory 1202. These processing data and instructions may be stored in a storage medium disk 1204, such as a hard disk drive (HDD) or a portable storage medium, or may be stored remotely. Furthermore, the disclosure as claimed is not limited by the form of computer readable medium on which the instructions for the processes according to the invention are stored. For example, these instructions may be stored on a CD, DVD, flash memory, RAM, ROM, PROM, EPROM, EEPROM, hard disk, or any other information processing device, such as a server and / or computer with which the processing circuitry 130 communicates.

[0114] Additionally, the present disclosure as claimed may be provided as a utility application, a background daemon, a component of an operating system, or any combination thereof, and may be executed in conjunction with the CPU 1200 and an operating system known to those skilled in the art, such as Microsoft Windows (registered trademark), UNIX (registered trademark), Solaris (registered trademark), LINUX (registered trademark), Apple MAC-OS, etc.

[0115] The hardware elements constituting the processing circuit 130 can be realized by various circuit elements. Furthermore, each function of the above-described embodiments can be implemented by a circuit including one or more processing circuits. As shown in FIG. 11, the processing circuit includes a specific programmed processing device, such as a processing unit (CPU) 1200. The processing circuit also includes devices such as application specific integrated circuits (ASICs) or conventional circuit components configured to implement the described functions.

[0116] 11, the processing circuitry 130 includes a CPU 1200 that performs the above-described processing. The processing circuitry 130 may be a general-purpose computer or a specific dedicated machine. In one embodiment, the processing circuitry 130 functions as a specific dedicated machine when the processing device 1200 is programmed to control each part of the plasma processing device 1, such as the gas supply 20, the power supply 30, the lift mechanism 50, and the switch 80.

[0117] Alternatively or additionally, CPU 1200 may be implemented on an FPGA, ASIC, PLD, or with discrete logic circuitry, as will be appreciated by those skilled in the art. Further, CPU 1200 may be implemented as multiple processing devices cooperating to perform in parallel the instructions of the processes of the present invention described above.

[0118] The processing circuitry 130 of FIG. 11 also includes a network controller 1206, such as an Intel Ethernet PRO network interface card from Intel Corporation, USA, for interfacing with a network 1228. As can be appreciated, the network 1228 may be a public network, such as the Internet, a private network, such as a LAN or WAN, or any combination thereof, and may include sub-networks, such as PSTN or ISDN. The network 1228 may also be wired, such as an Ethernet network, or wireless, such as a cellular network, including EDGE, 3G, and 4G wireless cellular systems. The wireless network may also be Wi-Fi, Bluetooth, or any other known form of wireless communication.

[0119] The processing circuitry 130 further includes a display device controller 1208, such as a graphics card or graphics adapter, for interfacing with a display device 1210, such as a monitor. A general purpose I / O interface 1212 interfaces with a keyboard and / or mouse 1214, and a touch panel 1216, which may be integral with or separate from the display device 1210. The general purpose I / O interface is also connected to various peripheral devices 1218, such as printers and scanners.

[0120] The storage controller 1224 is connected to the storage media disk 1204 via a communication bus 1226, such as ISA, EISA, VESA, PCI, etc., and all components of the processing circuitry 130 are connected to each other. The display device 1210, keyboard and / or mouse 1214, and the general features and functions of the display device controller 1208, storage controller 1224, network controller 1206, audio controller 1220, and general purpose I / O interface 1212 are not described herein for the sake of brevity as they are well known.

[0121] The exemplary circuit elements described in this disclosure may be substituted with other elements and may have different structures than the examples described herein. Additionally, circuits configured to implement the features described herein may be implemented in multiple circuit units (e.g., chips) or these features may be combined into the circuitry of a single chipset.

[0122] The functions and features described herein may also be performed by various components distributed on the system. For example, one or more processors may perform the functions of these systems, where the processors are distributed across multiple components communicating in a network. Distributed components may include various human interface and communication devices (display monitors, smartphones, tablets, personal digital assistants (PDAs), etc.), as well as one or more client and server machines that can share processing. The network may be a private network, such as a LAN or WAN, or a public network, such as the Internet. Inputs to the system may be received by direct input by a user or remotely in real time or as a batch process. Furthermore, some of the embodiments may be implemented on modules or hardware that are not identical to those described above. Thus, other embodiments are within the scope of the claims.

[0123] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. In addition, elements in different embodiments can be combined to form other embodiments.

[0124] For example, any one of the above-mentioned containers FUa to FUd may be used as the stocker module RSM.

[0125] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims. [Explanation of symbols]

[0126] 1...plasma processing apparatus, 2...control unit, 10...chamber, 11...substrate support unit, 12...plasma generation unit, 1110...base, 1111...electrostatic chuck, 50...lift mechanism, 51...conductive ring, 52...rod, 53...actuator, 54...connecting member, 80...switch.

Claims

1. A chamber; a substrate support within the chamber; The base and an electrostatic chuck on the base; the substrate support including A plasma generating unit including a high frequency power source and configured to generate plasma in the chamber; a bias power supply configured to generate an electrical bias to attract ions from the plasma to a substrate on the substrate support, the bias power supply and / or the radio frequency power supply being electrically coupled to the base; an edge ring having electrical conductivity and disposed to surround the substrate on the substrate support; a lift mechanism configured to move the edge ring up and down; a conductive ring that is electrically coupled to the edge ring while supporting the edge ring placed thereon; a rod extending vertically below the conductive ring; an actuator configured to move the edge ring up and down via the rod and the conductive ring; a connecting member for providing an electrical connection between the conductive ring and the base; the lift mechanism including: a switch configured to be able to switch between a first state in which the edge ring and the base are electrically coupled to each other and a second state in which the edge ring and the base are electrically isolated from each other; A control unit configured to control switching between the first state and the second state by the switch; A plasma processing apparatus comprising:

2. 2 . The plasma processing apparatus of claim 1 , wherein the lift mechanism is the switch and is configured to create the second state by lowering the conductive ring with the actuator so as to separate the conductive ring from the edge ring.

3. The plasma processing apparatus according to claim 1 , wherein the switch includes a switching element connected between the connection member and the conductive ring or between the connection member and the base.

4. The plasma processing apparatus of claim 1 , wherein the switch includes another lift mechanism configured to lift the edge ring off the conductive ring to create the second state.

5. The control unit is controlling the switch to form the first state when a plasma process specified by a recipe is a plasma process for the substrate on the substrate support; controlling the switch to form the second state when the plasma process specified by the recipe is plasma cleaning of the chamber; It is configured as follows: The plasma processing apparatus according to any one of claims 1 to 4.

6. The control unit is controlling the switch to form the first state when a plasma process specified by a recipe is a plasma process for the substrate on the substrate support; controlling the switch to form the second state when the plasma process specified by the recipe is plasma cleaning of the chamber; controlling the lift mechanism so as to set a heightwise position of the edge ring when the plasma cleaning is being performed to a position higher than a heightwise position of the edge ring when the plasma processing is being performed on the substrate; 4. The plasma processing apparatus according to claim 3, wherein the plasma processing apparatus is configured as follows.

7. the edge ring includes an inner periphery and an outer periphery positioned on the conductive ring with the edge ring supported by the conductive ring; the outer periphery has a vertical length configured to hide the conductive ring from a space above the substrate support when the plasma cleaning is being performed. The plasma processing apparatus according to claim 6 .

8. The plasma processing apparatus of claim 6 , wherein the lift mechanism further includes a coating that covers a surface of the conductive ring to protect the conductive ring from plasma.

9. The electrostatic chuck includes an electrode below the edge ring, The plasma processing apparatus further includes another switching element electrically connected between the base and the electrode, The control unit is When the plasma cleaning is being performed, the switching element of the switch is controlled to disconnect the electrical connection between the conductive ring and the base and connect the conductive ring to ground; controlling the other switching element to electrically connect the electrode and the base to each other when the plasma cleaning is being performed; It is configured as follows: The plasma processing apparatus according to any one of claims 6 to 8.

10. the lift mechanism further includes a protective member having electrical conductivity and mounted on the conductive ring; The control unit is controlling the switch to form the first state when a plasma process specified by a recipe is a plasma process for the substrate on the substrate support; controlling the switch to form the second state when the plasma process specified by the recipe is plasma cleaning of the chamber; and controlling the separate lift mechanism so as to set a height direction position of the edge ring when the plasma cleaning is being performed to a position higher than a height direction position of the edge ring when the plasma processing is being performed on the substrate, and to a position spaced upward from the conductive ring and the protective member. The plasma processing apparatus according to claim 4 .

11. The plasma processing apparatus of claim 10 , wherein the protection member is made of the same material as the edge ring.

12. The control unit is causing the switch to form the first state to perform a recipe-specified plasma etch to form a recess in the substrate on the substrate support; Then, the switch is caused to enter the second state to perform an ashing process specified by the recipe to remove deposits on the substrate; causing the switch to form the first state to perform a plasma etch specified by the recipe to increase the depth of the recess after the ashing process. It is configured as follows: The plasma processing apparatus according to any one of claims 1 to 4.

13. The control unit is causing the switch to form the second state while the edge ring is disposed on the substrate support to perform a first plasma cleaning of the chamber as specified by a recipe; Then, with the edge ring disposed on the substrate support, the switch is caused to form the first state to perform a second plasma cleaning of the chamber specified by the recipe; Then, after the edge ring on the substrate support is replaced, the switch is caused to form the second state, and a seasoning process for the chamber specified by the recipe is performed. It is configured as follows: The plasma processing apparatus according to any one of claims 1 to 4.

14. a sensor configured to measure an amount of deposition on the edge ring; The control unit is causing the switch to form the first state to perform recipe-specified plasma cleaning of the chamber to remove the deposits; controlling the switch to establish the second state when the amount of deposits measured by the sensor during the execution of the plasma cleaning becomes equal to or less than a threshold value; It is configured as follows: The plasma processing apparatus according to any one of claims 1 to 4.

15. A plasma processing method performed using the plasma processing apparatus according to any one of claims 1 to 4, A step of a control unit reading a recipe; controlling the switch in accordance with the recipe; performing a plasma processing according to the recipe; A plasma processing method comprising:

16. In the step of controlling the switch, controlling the switch to form the first state when the plasma process specified by the recipe is a plasma process for a substrate on the substrate support; controlling the switch to form the second state when the plasma process specified by the recipe is plasma cleaning of the chamber; The plasma processing method according to claim 15.

17. 17. The plasma processing method of claim 16, wherein a heightwise position of the edge ring is set to a position higher than a heightwise position of the edge ring when the plasma cleaning is being performed on the substrate.

18. When the plasma cleaning is being performed, an electrical connection between the conductive ring and the base is cut off and the conductive ring is connected to ground; When the plasma cleaning is being performed, an electrode built in the electrostatic chuck below the edge ring and the base are electrically connected to each other by a switching element. The plasma processing method according to claim 17.

19. In order to form a recess in the substrate on the substrate support, in the step of controlling the switch, the switch is caused to form the first state, and in the step of performing a plasma process, a plasma etching specified by the recipe is performed; Then, in the step of controlling the switch, the switch is caused to form the second state in order to remove deposits on the substrate, and in the step of performing a plasma processing, an ashing process specified by the recipe is performed; In order to increase the depth of the recessed portion after the ashing process, in the step of controlling the switch, the switch is caused to form the first state, and in the step of performing a plasma process, a plasma etching specified by the recipe is performed. The plasma processing method according to claim 15.

20. In the step of controlling the switch while the edge ring is disposed on the substrate support, the switch is caused to form the second state, and in the step of performing plasma processing, a first plasma cleaning of the chamber specified by the recipe is performed; Then, in the step of controlling the switch while the edge ring is disposed on the substrate support, the switch is caused to form the first state, and in the step of performing plasma processing, a second plasma cleaning of the chamber designated by the recipe is performed; Then, after the edge ring on the substrate support is replaced, in the step of controlling the switch, the switch is caused to form the second state, and in the step of performing a plasma processing, a seasoning process of the chamber designated by the recipe is performed. The plasma processing method according to claim 15.

21. The plasma processing apparatus further comprises a sensor configured to measure an amount of deposition on the edge ring. In the step of controlling the switch to remove the deposits, the switch is caused to form the first state, and in the step of performing a plasma process, a plasma cleaning of the chamber designated by the recipe is performed; In the step of controlling the switch when the amount of the deposits measured by the sensor during the execution of the plasma cleaning becomes equal to or less than a threshold value, the switch is controlled to form the second state. The plasma processing method according to claim 15.

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