Method for manufacturing semiconductor device and laminate for semiconductor processing

Abstract

The purpose of the present invention is to provide a manufacturing method for a semiconductor device and a laminate for semiconductor processing by which peeling is suppressed at an interface between a temporary fixing tape and an adhesive tape for semiconductor processing, and by which it is possible to favorably pick up a semiconductor package. The present invention involves a manufacturing method for a semiconductor device, wherein the method comprises a step (3) in which, in a laminate for semiconductor processing obtained by laminating a semiconductor package to which a semiconductor processing adhesive tape is adhered on a temporary fixing tape such that the semiconductor processing adhesive tape-side is in contact, and forming a metal film on the rear surface and side surfaces of the semiconductor package to which the semiconductor processing adhesive tape is adhered, the semiconductor package in which the metal film is formed on the rear surface and the side surfaces is picked up from the semiconductor processing adhesive tape; and in step (3), the semiconductor package in which the metal film is formed on the rear surface and the side surfaces is picked up when heated to a temperature T1 that satisfies formula (1) below. (1) 100 < {Fb(T1) / Fa(T1)} In formula (1): Fa(t) represents the peel strength of the semiconductor processing adhesive tape at temperature t with respect to a copper plate; Fa(T1) represents the value of Fa(t) at temperature t = T1; Fb(t) represents the peel strength of the temporary fixing tape at temperature t with respect to the semiconductor processing adhesive tape; and Fb(T1) represents the value of Fb(t) at temperature t = T1.

Description

[Technical field]

[0001] The present invention relates to a method for manufacturing a semiconductor device, which can suppress peeling at the interface between a temporary fixing tape and an adhesive tape for semiconductor processing and can satisfactorily pick up a semiconductor package, and a laminate for semiconductor processing. [Background technology]

[0002] During processing of electronic components such as semiconductors, in order to facilitate handling of the electronic components and prevent them from being damaged, the electronic components are protected by being fixed to a support plate via a pressure-sensitive adhesive composition or by being attached with a pressure-sensitive adhesive tape. For example, when a thick-film wafer cut from a high-purity silicon single crystal or the like is ground to a predetermined thickness to obtain a thin-film wafer, the thick-film wafer is adhered to a support plate via a pressure-sensitive adhesive composition.

[0003] Adhesive tape is also applied to a semiconductor package when a large-area semiconductor package is diced to obtain a large number of individual semiconductor packages. In such a process, the semiconductor package to which the adhesive tape is applied is temporarily fixed on a tape called a dicing tape, and the semiconductor package is diced together with the adhesive tape on the dicing tape. After dicing, the individual semiconductor packages are peeled off from the dicing tape and / or the adhesive tape by needle pick-up or the like.

[0004] Thus, pressure-sensitive adhesive compositions and pressure-sensitive adhesive tapes used for electronic components are required to have high enough adhesion to firmly fix the electronic components during processing, and also to be able to be peeled off without damaging the electronic components after the processing is completed (hereinafter, also referred to as "high adhesion and easy peeling"). As a means of achieving high adhesion and easy peeling, for example, Patent Document 1 discloses an adhesive sheet using an adhesive in which a polyfunctional monomer or oligomer having a radiation-polymerizable functional group is bonded to the side chain or main chain of the polymer. By utilizing the fact that the polymer has a radiation-polymerizable functional group and is cured by exposure to ultraviolet light, the adhesive strength is reduced by exposure to ultraviolet light during peeling, allowing peeling without leaving any adhesive residue. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 5-32946 Summary of the Invention [Problem to be solved by the invention]

[0006] On the other hand, communication devices such as mobile phones are becoming increasingly high-frequency, which has led to problems with noise from high frequencies causing malfunctions of semiconductor packages. In particular, communication devices in recent years have become smaller, leading to increased device density and lower device voltages, making semiconductor packages more susceptible to the effects of high-frequency noise. To address this problem, for example, a shielding process is performed on the back and sides of the individual semiconductor packages after dicing, in which the back and sides are covered with a metal film by sputtering or the like to block high frequencies. Even in such a shielding process, an adhesive tape is attached to the circuit surface (front) of the semiconductor package to protect the circuit surface (front) and prevent contamination. That is, the semiconductor package with the adhesive tape attached to the circuit surface (front) is further temporarily fixed on a temporary fixing tape, and a metal film is formed on the back and sides of the semiconductor package on the temporary fixing tape.

[0007] After the shielding process, the semiconductor package having the metal film formed on the back and sides is peeled off from the temporary fixing tape and the adhesive tape by needle pick-up, etc. However, depending on the height, shape, etc. of the electrodes on the circuit surface (front surface) of the semiconductor package, pick-up of the semiconductor package after the shielding process may not be performed well. The present invention aims to provide a method for manufacturing a semiconductor device, which can suppress peeling at the interface between a temporary fixing tape and an adhesive tape for semiconductor processing and can satisfactorily pick up a semiconductor package, and a laminate for semiconductor processing. [Means for solving the problem]

[0008] The present invention is a method for manufacturing a semiconductor device, comprising: a semiconductor package having an adhesive tape for semiconductor processing affixed thereto is laminated on a temporary fixing tape with the adhesive tape for semiconductor processing in contact with the semiconductor processing adhesive tape; and a metal film is formed on the back and side surfaces of the semiconductor package to which the adhesive tape for semiconductor processing is affixed. In this semiconductor processing laminate, the semiconductor package having the metal film formed on its back and side surfaces is picked up from the adhesive tape for semiconductor processing. In the step (3), the semiconductor package having the metal film formed on its back and side surfaces is picked up in a state heated to a temperature T1 that satisfies the following formula (1). 100<{Fb(T1) / Fa(T1)} (1) In formula (1), Fa(t) represents the peeling force of the adhesive tape for semiconductor processing from the copper plate at temperature t, Fa(T1) represents the value of Fa(t) at temperature t = T1, Fb(t) represents the peeling force of the temporary fixing tape from the adhesive tape for semiconductor processing at temperature t, and Fb(T1) represents the value of Fb(t) at temperature t = T1. The present invention will be described in detail below.

[0009] When picking up a semiconductor package after shielding, peeling occurs not at the interface between the semiconductor package and the adhesive tape (semiconductor processing adhesive tape), but at the interface between the temporary fixing tape and the semiconductor processing adhesive tape, resulting in pick-up failure. In response to this problem, the present inventors have focused on the "adhesive strength of the semiconductor processing adhesive tape to the adherend (a standard copper plate)" and the "adhesive strength of the temporary fixing tape to the semiconductor processing adhesive tape." The present inventors have found that by picking up a semiconductor package in a state heated to a temperature at which the ratio of these adhesive strengths satisfies a specific range, peeling at the interface between the temporary fixing tape and the semiconductor processing adhesive tape can be suppressed, and the semiconductor package can be picked up satisfactorily, leading to the completion of the present invention.

[0010] In the method for manufacturing a semiconductor device of the present invention, a step (3) is carried out in which a semiconductor package having a metal film formed on its rear surface and side surfaces is picked up from an adhesive tape for semiconductor processing in a specific laminate for semiconductor processing. Here, the specific semiconductor processing laminate is a semiconductor processing laminate in which a semiconductor package to which a semiconductor processing adhesive tape is attached is laminated on a temporary fixing tape so that the semiconductor processing adhesive tape side is in contact with the semiconductor processing adhesive tape, and a metal film is formed on the back and side of the semiconductor package to which the semiconductor processing adhesive tape is attached. Although there is no particular limitation on the method for obtaining such a semiconductor processing laminate, a method for obtaining a semiconductor processing laminate by performing the following steps (1) and (2) before the above step (3) is preferable. That is, in the manufacturing method of the semiconductor device of the present invention, it is preferable to first perform step (1) of temporarily fixing a semiconductor package to which a semiconductor processing adhesive tape is attached on a temporary fixing tape so that the semiconductor processing adhesive tape side is in contact with the semiconductor processing adhesive tape.

[0011] The adhesive tape for semiconductor processing may be a support type having a substrate and an adhesive layer laminated on at least one side of the substrate, or may be a non-support type having no substrate and an adhesive layer.Among them, a single-sided support type having a substrate and an adhesive layer laminated on one side of the substrate is preferred, since it is easy to adjust Fb(t) / Fa(t) as described later and can pick up the semiconductor package better.When the adhesive tape for semiconductor processing is a single-sided support type, the substrate side of the adhesive tape for semiconductor processing contacts the adhesive surface of the temporary fixing tape.

[0012] The material of the substrate of the pressure-sensitive adhesive tape for semiconductor processing is not particularly limited, but is preferably a heat-resistant material. Examples of materials for the substrate of the adhesive tape for semiconductor processing include polyethylene terephthalate, polyethylene naphthalate, polyacetal, polyamide, polycarbonate, polyphenylene ether, polybutylene terephthalate, ultra-high molecular weight polyethylene, syndiotactic polystyrene, polyarylate, polysulfone, polyethersulfone, polyphenylene sulfide, polyetheretherketone, polyimide, polyetherimide, fluororesin, liquid crystal polymer, etc. Among these, polyethylene terephthalate and polyethylene naphthalate are preferred because of their excellent heat resistance.

[0013] The substrate of the pressure-sensitive adhesive tape for semiconductor processing preferably has an easy-adhesion layer on the surface opposite to the pressure-sensitive adhesive layer. The adhesive layer is formed on the surface of the substrate of the adhesive tape for semiconductor processing opposite to the adhesive layer, i.e., on the back surface. By having the adhesive layer on the substrate of the adhesive tape for semiconductor processing, it becomes easy to adjust Fb(t) / Fa(t) as described later, and the semiconductor package can be picked up more smoothly.

[0014] Examples of the easy-adhesion layer include a SiOx layer, a metal oxide layer, an organometallic compound layer, a silicone compound layer, a polymerizable polymer layer, a corona-treated layer, a plasma-treated layer, etc. Among these, the organometallic compound layer and the corona-treated layer are preferred because they have a higher easy-adhesion effect.

[0015] Examples of methods for easy adhesion treatment using organic or inorganic compounds (i.e., methods for forming the above-mentioned SiOx layer, metal oxide layer, organometallic compound layer, silicone compound layer, polymerizable polymer layer, etc.) include vapor deposition and coating. Examples of methods for forming the corona treatment layer include a method in which a high-frequency power supply (AGI-020 manufactured by Kasuga Electric Co., Ltd.) is used to perform corona treatment on the back surface of the substrate by moving the film back and forth once under conditions of an output of 0.24 kW, a speed of 40 mm / min, and an electrode distance of 1 mm.

[0016] The base material of the adhesive tape for semiconductor processing has a bending stiffness per unit width in the TD direction at 23°C of 2.38 × 10 -7 N m 2 / m or more, 1.50×10 -4 N m 2 When the bending stiffness per unit width in the TD direction at 23° C. is within the above range, the adhesive tape for semiconductor processing can more reliably protect the adherend and has excellent handleability. The bending stiffness per unit width in the TD direction at 23° C. is preferably 4.12×10 -7 N m 2 / m or more is more preferable, and 9.76×10 -7 N m 2 / m or more, and more preferably 8.5×10 -5 N m 2 / m or less is more preferable, and 1.0×10 -5 N m 2 It is more preferable that the thickness is equal to or less than 1 / m. Here, the TD (Transverse Direction) direction refers to a direction perpendicular to the extrusion direction when the substrate is extruded into a sheet. The bending stiffness per unit width is expressed as the product of the tensile modulus E and the second moment of area I divided by the width of the substrate. The tensile modulus E can be measured, for example, using a viscoelasticity spectrometer (e.g., DVA-200, manufactured by IT Measurement and Control Co., Ltd.) under the conditions of a constant temperature rise tensile mode, a temperature rise rate of 10°C / min, and a frequency of 10 Hz. The second moment of area I of a substrate (with a rectangular cross section) is expressed by the following formula (3). I = (width of substrate (m)) x (thickness of substrate (m)) 3 / 12 (unit m 4 ) (3)

[0017] The storage modulus of the substrate of the adhesive tape for semiconductor processing is not particularly limited, but is preferably 5.0×10 7 Pa or more, 1.0×10 11 The storage modulus of the substrate of the adhesive tape for semiconductor processing is preferably 8.0×10 Pa or less. When the storage modulus of the substrate of the adhesive tape for semiconductor processing is within the above range, the substrate is moderately easy to bend, so that peeling of the semiconductor package when dicing the semiconductor package together with the adhesive tape for semiconductor processing is more suppressed, and the semiconductor package can be more satisfactorily picked up. The storage modulus of the substrate of the adhesive tape for semiconductor processing is preferably 8.0×10 8 More preferably, the pressure is 1.0×10 Pa or more. 9 More preferably, the pressure is 5.0×10 Pa or more. 10 Pa or less, and more preferably 5.0×10 9 It is more preferable that the viscosity is 0.1 Pa or less. The storage modulus of the substrate of the adhesive tape for semiconductor processing can be measured by, for example, dynamic viscoelasticity measurement, tensile test, etc. More specifically, a strip-shaped test piece with a width of 10 mm is prepared. The obtained test piece is subjected to a tensile test at a temperature of 23°C, a humidity of 50%, and a test speed of 300 mm / min using a tensile tester (for example, RTG1250A, manufactured by AND Co., Ltd., etc.), and the tensile storage modulus can be obtained according to JIS K7161-1.

[0018] The ultraviolet transmittance of the substrate of the adhesive tape for semiconductor processing is not particularly limited, but when the adhesive layer of the adhesive tape for semiconductor processing is a photocurable adhesive layer, the ultraviolet transmittance at 405 nm is preferably 1% or more. The ultraviolet transmittance at 405 nm is more preferably 10% or more, more preferably 15% or more, and particularly preferably 50% or more. When the adhesive layer of the adhesive tape for semiconductor processing is a photocurable adhesive layer, the ultraviolet transmittance at 405 nm is not particularly limited, and the adhesive layer can be sufficiently cured without using a photosensitizer. The upper limit of the ultraviolet transmittance at 405 nm is not particularly limited, and the higher the better, and it is usually 100% or less.

[0019] The thickness of the substrate of the adhesive tape for semiconductor processing is not particularly limited, but the preferred lower limit is 5 μm, and the preferred upper limit is 200 μm. By making the thickness of the substrate of the adhesive tape for semiconductor processing within the above range, the adhesive tape for semiconductor processing can have a suitable stiffness and excellent handling properties. The more preferred lower limit of the thickness of the substrate of the adhesive tape for semiconductor processing is 10 μm, and the more preferred upper limit is 150 μm.

[0020] The adhesive constituting the adhesive layer of the semiconductor processing adhesive tape is not particularly limited, and may be either a non-curing adhesive or a curing adhesive. Specific examples include rubber-based adhesives, acrylic-based adhesives, vinyl alkyl ether-based adhesives, silicone-based adhesives, polyester-based adhesives, polyamide-based adhesives, urethane-based adhesives, and styrene-diene block copolymer-based adhesives. Among them, acrylic-based adhesives are preferred because they have excellent heat resistance and are easy to adjust the adhesive strength, and acrylic curing adhesives are more preferred.

[0021] The curable adhesive may be a photocurable adhesive that crosslinks and cures when irradiated with light, or a thermosetting adhesive that crosslinks and cures when heated. Of these, a photocurable adhesive is preferred because it is less likely to damage the adherend and can be easily cured. That is, the adhesive layer may be a photocurable adhesive layer, a thermosetting adhesive layer, or the like, but a photocurable adhesive layer is preferred. The photocurable adhesive may be, for example, an adhesive containing a polymerizable polymer as a main component and a photopolymerization initiator. The thermocurable adhesive may be, for example, an adhesive containing a polymerizable polymer as a main component and a thermal polymerization initiator.

[0022] The above-mentioned polymerizable polymer can be obtained, for example, by previously synthesizing a (meth)acrylic polymer having a functional group in the molecule (hereinafter referred to as a functional group-containing (meth)acrylic polymer), and reacting it with a compound having a functional group reactive with the above-mentioned functional group and a radically polymerizable unsaturated bond in the molecule (hereinafter referred to as a functional group-containing unsaturated compound).

[0023] The functional group-containing (meth)acrylic polymer can be obtained, for example, by copolymerizing an acrylic acid alkyl ester and / or a methacrylic acid alkyl ester in which the carbon number of the alkyl group is usually in the range of 2 to 18, a functional group-containing monomer, and, if necessary, another modifying monomer copolymerizable therewith.

[0024] The weight average molecular weight of the functional group-containing (meth)acrylic polymer is not particularly limited, but is usually about 200,000 to 2,000,000. The weight average molecular weight can be determined by gel permeation chromatography. More specifically, for example, the obtained polymer is adjusted to 0.2% by weight with tetrahydrofuran (THF) and the resulting diluted solution is filtered through a filter (material: polytetrafluoroethylene, pore size: 0.2 μm). The obtained filtrate is fed to a gel permeation chromatograph (Waters, 2690 Separations Model, or equivalent), and GPC measurement is performed under conditions of a sample flow rate of 1 mL / min and a column temperature of 40° C., and the polystyrene-equivalent molecular weight is measured to determine the weight average molecular weight (Mw). A GPC KF-806L (Showa Denko, or equivalent) is used as the column, and a differential refractometer is used as the detector.

[0025] Examples of the functional group-containing monomer include carboxyl group-containing monomers such as acrylic acid and methacrylic acid, hydroxyl group-containing monomers such as hydroxyethyl acrylate and hydroxyethyl methacrylate, and epoxy group-containing monomers such as glycidyl acrylate and glycidyl methacrylate. Examples of the functional group-containing monomer include isocyanate group-containing monomers such as isocyanate ethyl acrylate and isocyanate ethyl methacrylate, and amino group-containing monomers such as aminoethyl acrylate and aminoethyl methacrylate.

[0026] Examples of the other copolymerizable modifying monomers include various monomers used in general (meth)acrylic polymers, such as vinyl acetate, acrylonitrile, and styrene.

[0027] As the functional group-containing unsaturated compound to be reacted with the functional group-containing (meth)acrylic polymer, the same as the functional group-containing monomer described above can be used according to the functional group of the functional group-containing (meth)acrylic polymer. For example, when the functional group of the functional group-containing (meth)acrylic polymer is a carboxyl group, an epoxy group-containing monomer or an isocyanate group-containing monomer is used. When the functional group of the functional group-containing (meth)acrylic polymer is a hydroxyl group, an isocyanate group-containing monomer is used. When the functional group of the functional group-containing (meth)acrylic polymer is an epoxy group, a carboxyl group-containing monomer or an amide group-containing monomer such as acrylamide is used. When the functional group of the functional group-containing (meth)acrylic polymer is an amino group, an epoxy group-containing monomer is used.

[0028] To obtain the functional group-containing (meth)acrylic polymer, the raw material monomers may be subjected to a radical reaction in the presence of a polymerization initiator. As a method for radically reacting the raw material monomers, i.e., a polymerization method, a conventionally known method may be used, such as solution polymerization (boiling point polymerization or constant temperature polymerization), emulsion polymerization, suspension polymerization, bulk polymerization, etc. The polymerization initiator used in the radical reaction for obtaining the functional group-containing (meth)acrylic polymer is not particularly limited, and examples thereof include organic peroxides and azo compounds. Examples of the organic peroxides include 1,1-bis(t-hexylperoxy)-3,3,5-trimethylcyclohexane, t-hexylperoxypivalate, t-butylperoxypivalate, 2,5-dimethyl-2,5-bis(2-ethylhexanoylperoxy)hexane, t-hexylperoxy-2-ethylhexanoate, t-butylperoxy-2-ethylhexanoate, t-butylperoxyisobutyrate, t-butylperoxy-3,5,5-trimethylhexanoate, and t-butylperoxylaurate. Examples of the azo compounds include azobisisobutyronitrile and azobiscyclohexanecarbonitrile. These polymerization initiators may be used alone or in combination of two or more.

[0029] The photocurable pressure-sensitive adhesive layer preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include those that are activated by irradiation with light having a wavelength of 250 to 800 nm. Examples of such photopolymerization initiators include acetophenone derivative compounds such as methoxyacetophenone, benzoin ether compounds such as benzoin propyl ether and benzoin isobutyl ether, ketal derivative compounds such as benzyl dimethyl ketal and acetophenone diethyl ketal, and phosphine oxide derivative compounds. Other examples include bis(η5-cyclopentadienyl)titanocene derivative compounds, benzophenone, Michler's ketone, chlorothioxanthone, todecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, α-hydroxycyclohexylphenyl ketone, and 2-hydroxymethylphenylpropane. These photopolymerization initiators may be used alone or in combination of two or more.

[0030] The thermosetting adhesive layer preferably contains a thermal polymerization initiator. Examples of the thermal polymerization initiator include those that decompose by heat and generate active radicals that initiate polymerization curing. Specific examples include dicumyl peroxide, di-t-butyl peroxide, t-butyl peroxybenzoyl, t-butyl hydroperoxide, benzoyl peroxide, cumene hydroperoxide, diisopropylbenzene hydroperoxide, paramenthane hydroperoxide, and di-t-butyl peroxide. The commercially available thermal polymerization initiator is not particularly limited, but examples thereof include Perbutyl D, Perbutyl H, Perbutyl P, Perpenta H (all manufactured by NOF Corp.), etc. These thermal polymerization initiators may be used alone or in combination of two or more kinds.

[0031] The pressure-sensitive adhesive layer may further contain a radically polymerizable polyfunctional oligomer or monomer. By containing a radically polymerizable polyfunctional oligomer or monomer, the photocurability and heat curability of the pressure-sensitive adhesive layer are improved. The polyfunctional oligomer or monomer is not particularly limited, but preferably has a weight average molecular weight of 10,000 or less. In order to efficiently form a three-dimensional network in the pressure-sensitive adhesive layer by light irradiation or heating, the polyfunctional oligomer or monomer preferably has a weight average molecular weight of 5,000 or less and has 2 to 20 radically polymerizable unsaturated bonds in the molecule.

[0032] Examples of the polyfunctional oligomer or monomer include trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, and methacrylates thereof. Examples of the polyfunctional oligomer or monomer include 1,4-butylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, commercially available oligoester acrylates, and methacrylates thereof. These polyfunctional oligomers or monomers may be used alone or in combination of two or more.

[0033] The pressure-sensitive adhesive layer may further contain an inorganic filler such as fumed silica. By containing an inorganic filler, the cohesive strength of the pressure-sensitive adhesive layer is increased, and the peelability of the pressure-sensitive adhesive tape for semiconductor processing is improved, so that the semiconductor package can be more easily picked up.

[0034] The pressure-sensitive adhesive layer preferably contains a crosslinking agent, which increases the cohesive strength of the pressure-sensitive adhesive layer and improves the peelability of the pressure-sensitive adhesive tape for semiconductor processing, thereby enabling better pick-up of the semiconductor package. The crosslinking agent is not particularly limited, and examples thereof include isocyanate-based crosslinking agents, epoxy-based crosslinking agents, aziridine-based crosslinking agents, metal chelate-based crosslinking agents, etc. Among these, isocyanate-based crosslinking agents are preferred because they provide higher adhesive strength.

[0035] The content of the crosslinking agent is preferably 0.1 parts by weight or more and 20 parts by weight or less relative to 100 parts by weight of the adhesive constituting the adhesive layer. By having the content of the crosslinking agent within the above range, the adhesive can be appropriately crosslinked to increase the adhesive strength. From the viewpoint of further increasing the adhesive strength, the more preferred lower limit of the content of the crosslinking agent is 0.5 parts by weight, the more preferred upper limit is 15 parts by weight, the even more preferred lower limit is 1.0 part by weight, and the even more preferred upper limit is 10 parts by weight.

[0036] The pressure-sensitive adhesive layer may contain known additives such as plasticizers, resins, surfactants, waxes, fine particle fillers, etc. These additives may be used alone or in combination of two or more kinds.

[0037] The pressure-sensitive adhesive layer has a storage modulus of 8.5×10 at 23° C. 5 Pa or more, 1.7×10 9 The storage modulus at 23° C. of the pressure-sensitive adhesive layer is preferably 1.7×10 Pa or less. When the storage modulus at 23° C. of the pressure-sensitive adhesive layer is within the above range, the pressure-sensitive adhesive layer can be attached to the adherend with sufficient adhesive strength, and the adherend can be sufficiently fixed. In addition, the peelability of the pressure-sensitive adhesive tape for semiconductor processing is improved, so that the semiconductor package can be picked up more smoothly. From the viewpoint of improving the adhesive strength and peelability, the storage modulus at 23° C. of the pressure-sensitive adhesive layer is preferably 1.7×10 6 More preferably, the pressure is 8.5×10 Pa or more. 6 More preferably, the pressure is 1.7×10 Pa or more. 8 Pa or less, and more preferably 8.5×10 7 It is more preferable that the viscosity is 0.1 Pa or less. In addition, when the pressure-sensitive adhesive is a curing pressure-sensitive adhesive, the storage modulus of the pressure-sensitive adhesive layer refers to that after curing. In the case of a heat-curing pressure-sensitive adhesive, the state after heating at 120°C for 1 hour and then heating at 175°C for 1 hour is considered to be after curing, and in the case of a photocuring pressure-sensitive adhesive, the state after irradiating the adhesive with 405 nm ultraviolet light with an integrated intensity of 2500 mJ / cm using an ultra-high pressure mercury ultraviolet irradiator is considered to be after curing. 2 The state after the pressure-sensitive adhesive layer is irradiated from the substrate side so as to be as shown in FIG. The storage modulus of the pressure-sensitive adhesive layer at 23° C. can be measured, for example, by dynamic viscoelasticity measurement. More specifically, the storage modulus can be measured using a viscoelasticity spectrometer (e.g., DVA-200, manufactured by IT Measurement & Control Co., Ltd.) under conditions of a constant temperature rise tensile mode, a temperature rise rate of 10° C. / min, and a frequency of 10 Hz.

[0038] The thickness of the pressure-sensitive adhesive layer is not particularly limited, but the preferred lower limit is 5 μm, and the preferred upper limit is 500 μm. By having the thickness of the pressure-sensitive adhesive layer within the above range, the pressure-sensitive adhesive layer can be attached to the adherend with sufficient adhesive strength, and the adherend can be sufficiently fixed. From the viewpoint of improving the adhesive strength, the more preferred lower limit of the thickness of the pressure-sensitive adhesive layer is 10 μm, the more preferred upper limit is 300 μm, the even more preferred lower limit is 15 μm, the even more preferred upper limit is 250 μm, and the even more preferred upper limit is 200 μm.

[0039] The method for obtaining a semiconductor package having the above-mentioned adhesive tape for semiconductor processing attached thereto is not particularly limited, but a method for obtaining a semiconductor package having the above-mentioned adhesive tape for semiconductor processing attached thereto by carrying out the following steps (1-1) and (1-2) before the above step (1) is preferred. That is, before the above step (1), it is preferable to carry out a step (1-1) of attaching an adhesive tape for semiconductor processing to the circuit surface of a semiconductor package, and a step (1-2) of dicing the semiconductor package to which the adhesive tape for semiconductor processing has been attached, to obtain individual semiconductor packages to which the adhesive tape for semiconductor processing has been attached.

[0040] The method for attaching the pressure-sensitive adhesive tape for semiconductor processing is not particularly limited, and examples thereof include a method using a laminator.

[0041] When the adhesive layer of the adhesive tape for semiconductor processing is a photocurable adhesive layer, it is preferable to carry out a step (1-3) of irradiating the adhesive layer of the adhesive tape for semiconductor processing with light after the step (1-1). The method of irradiating the adhesive layer of the semiconductor processing adhesive tape with light is, for example, to irradiate 405 nm ultraviolet light with an integrated intensity of 2500 mJ / cm using an ultra-high pressure mercury ultraviolet irradiator. 2 The irradiation intensity is not particularly limited, but is preferably 50 to 100 mW / cm. 2 is preferred.

[0042] The dicing method is not particularly limited, and for example, the semiconductor package to which the adhesive tape for semiconductor processing is attached is temporarily fixed on a dicing tape, the dicing tape is attached to a dicing frame, and the dicing tape is peeled off after singulation using a dicing device. The dicing device is not particularly limited, and for example, DFD6361 manufactured by DISCO Corporation can be used.

[0043] In the above step (1), the semiconductor package thus obtained, to which the adhesive tape for semiconductor processing has been attached, is temporarily fixed on a temporary fixing tape so that the adhesive tape for semiconductor processing is in contact with the temporary fixing tape. The temporary fixing tape is not particularly limited, and any adhesive tape for temporary fixing that is usually used in the manufacturing method of a semiconductor device, particularly in dicing or shielding processing, can be used.

[0044] The adhesive strength of the temporary fixing tape to a copper plate (a copper plate satisfying JIS H3100:2018, for example, C1100P, manufactured by Engineering Test Services) is preferably 1.0 N / inch at the lower limit and 35 N / inch at the upper limit. When the adhesive strength of the temporary fixing tape to a copper plate is within the above range, it becomes easy to adjust Fb(t) / Fa(t) as described below, and the semiconductor package can be picked up better. In addition, if the adhesive strength to the copper plate is equal to or greater than the lower limit, peeling at the interface between the temporary fixing tape and the adhesive tape for semiconductor processing can be further suppressed. If the adhesive strength to the copper plate is equal to or less than the upper limit, the handling of the temporary fixing tape is improved. A more preferable lower limit of the adhesive strength of the temporary fixing tape to a copper plate is 4 N / inch, and a more preferable upper limit is 15 N / inch. The adhesive strength of the temporary fixing tape to the copper plate can be measured by, for example, the following method. First, the temporary fixing tape is placed on a copper plate so that the adhesive layer faces the copper plate (a copper plate that meets JIS H3100:2018, for example, C1100P, manufactured by Engineering Test Services Co., Ltd.). The temporary fixing tape and the copper plate are bonded together by moving a 2 kg rubber roller back and forth at a speed of 300 mm / min. Then, the test sample is left to stand at 23°C for 1 hour to prepare a test sample. After standing, the test sample is peeled off in the 180° direction at a pulling speed of 300 mm / min in an environment of 23°C and 50% relative humidity using an autograph (manufactured by Shimadzu Corporation) in accordance with JIS Z0237, and the peel strength is measured.

[0045] The temporary fixing tape preferably has a substrate and a pressure-sensitive adhesive layer laminated on one surface of the substrate. The adhesive layer of the temporary fixing tape is not particularly limited, but is preferably a silicone adhesive layer. The silicone adhesive layer improves the heat resistance of the temporary fixing tape. The silicone compound constituting the silicone adhesive layer is not particularly limited, and examples thereof include polysiloxane, addition curing silicone, and peroxide curing silicone.

[0046] The thickness of the adhesive layer of the temporary fixing tape is not particularly limited, but the preferred lower limit is 5 μm, and the preferred upper limit is 500 μm. By having the thickness of the adhesive layer of the temporary fixing tape within the above range, the adhesive layer can be attached to the adherend with sufficient adhesive strength, and the adherend can be sufficiently fixed. From the viewpoint of improving the adhesive strength, the more preferred lower limit of the thickness of the adhesive layer of the temporary fixing tape is 10 μm, the more preferred upper limit is 300 μm, the even more preferred lower limit is 15 μm, the even more preferred upper limit is 250 μm, and the even more preferred upper limit is 200 μm.

[0047] The material of the base material of the temporary fixing tape is not particularly limited, but is preferably a heat-resistant material. Examples of the material for the base material of the temporary fixing tape include polyethylene terephthalate, polyethylene naphthalate, polyacetal, polyamide, polycarbonate, polyphenylene ether, polybutylene terephthalate, ultra-high molecular weight polyethylene, syndiotactic polystyrene, polyarylate, polysulfone, polyethersulfone, polyphenylene sulfide, polyetheretherketone, polyimide, polyetherimide, fluororesin, liquid crystal polymer, etc. Among these, polyimide, polyethylene terephthalate, and polyethylene naphthalate are preferred because of their excellent heat resistance.

[0048] The thickness of the base material of the temporary fixing tape is not particularly limited, but the preferred lower limit is 5 μm, and the preferred upper limit is 200 μm. By having the thickness of the base material of the temporary fixing tape within the above range, the temporary fixing tape can have a suitable stiffness and excellent handling properties. The more preferred lower limit of the thickness of the base material of the temporary fixing tape is 10 μm, and the more preferred upper limit is 150 μm.

[0049] The commercially available temporary fixing tape is not particularly limited, and examples thereof include Kapton (registered trademark) adhesive tape 650R#50 (manufactured by Teraoka Corporation).

[0050] In the method for manufacturing a semiconductor device of the present invention, it is preferable to next carry out a step (2) of forming a metal film on the back and side surfaces of the semiconductor package to which the adhesive tape for semiconductor processing has been attached, on the temporary fixing tape. The method for forming the metal film is not particularly limited, and examples thereof include a method for forming a film made of stainless steel, titanium, aluminum, or the like by sputtering or the like.

[0051] By carrying out the above steps (1) and (2), a semiconductor processing laminate can be obtained in which a semiconductor package having an adhesive tape for semiconductor processing attached thereto is laminated on a temporary fixing tape with the adhesive tape for semiconductor processing in contact with the temporary fixing tape, and a metal film is formed on the back and side surfaces of the semiconductor package having the adhesive tape for semiconductor processing attached thereto. In the method for manufacturing a semiconductor device of the present invention, a step (3) is performed in which a semiconductor package having a metal film formed on the back surface and side surfaces of the semiconductor processing laminate is picked up from the adhesive tape for semiconductor processing, thereby obtaining a semiconductor package having a metal film formed on the back surface and side surfaces.

[0052] In the above step (3), the semiconductor package having the metal film formed on the back surface and side surfaces is picked up in a state where the semiconductor package has been heated to a temperature T1 that satisfies the following formula (1): 100<{Fb(T1) / Fa(T1)} (1) In formula (1), Fa(t) represents the peeling force of the adhesive tape for semiconductor processing from the copper plate at temperature t, Fa(T1) represents the value of Fa(t) at temperature t = T1, Fb(t) represents the peeling force of the temporary fixing tape from the adhesive tape for semiconductor processing at temperature t, and Fb(T1) represents the value of Fb(t) at temperature t = T1. When the adhesive tape for semiconductor processing is a single-sided support type, Fb(t) represents the peel force of the temporary fixing tape from the back surface of the substrate of the adhesive tape for semiconductor processing at temperature t.

[0053] The above Fa(t) is an index representing the "adhesive strength of the adhesive tape for semiconductor processing to an adherend (a standard copper plate) at temperature t." The above Fb(t) is an index representing the "adhesive strength of the temporary fixing tape to the adhesive tape for semiconductor processing at temperature t" (when the adhesive tape for semiconductor processing is a single-sided support type, the adhesive strength of the temporary fixing tape to the back surface of the substrate of the adhesive tape for semiconductor processing at temperature t). All of these adhesive strengths decrease when heated, but the degree of decrease differs, and Fa(t) tends to decrease more greatly when heated than Fb(t). That is, Fb(t) / Fa(t) tends to increase as t increases. In the step (3), by picking up the semiconductor package in a state where the semiconductor package is heated to a temperature at which the Fb(t) / Fa(t) satisfies the above range, the Fa(t) can be significantly reduced compared to the Fb(t), thereby suppressing peeling at the interface between the temporary fixing tape and the adhesive tape for semiconductor processing, and allowing the semiconductor package to be picked up satisfactorily. It should be noted that the standard copper plate refers to a copper plate that satisfies JIS H3100:2018 (e.g., C1100P, manufactured by Engineering Test Services).

[0054] In the step (3), the semiconductor package may be picked up in a state where it is heated to a temperature where the Fb(t) / Fa(t) satisfies the above range (i.e., exceeds 100), but it is preferable to pick up the semiconductor package in a state where it is heated to a temperature where the Fb(t) / Fa(t) is 103 or more. Furthermore, it is more preferable to pick up the semiconductor package in a state where it is heated to a temperature where the Fb(t) / Fa(t) is 150 or more. Furthermore, it is even more preferable to pick up the semiconductor package in a state where it is heated to a temperature where the Fb(t) / Fa(t) is 200 or more. The upper limit of the Fb(t) / Fa(t) is not particularly limited, but a substantial upper limit is, for example, 1500, and a more preferable upper limit is 750.

[0055] The value of Fa(t) at temperature T1 (Fa(T1)) is not particularly limited, but a preferred lower limit is 0.001 N / inch and a preferred upper limit is 0.5 N / inch. By keeping Fa(T1) within the above range, the semiconductor package can be picked up more effectively. A more preferred lower limit of Fa(T1) is 0.005 N / inch, an even more preferred lower limit is 0.01 N / inch, a more preferred upper limit is 0.1 N / inch, and an even more preferred upper limit is 0.07 N / inch.

[0056] The value (Fb(T1)) of Fb(t) at temperature T1 is not particularly limited, but a preferred lower limit is 1 N / inch, a more preferred lower limit is 5 N / inch, an even more preferred lower limit is 10 N / inch, and an even more preferred lower limit is 15 N / inch. When Fb(T1) is equal to or greater than the lower limit, the semiconductor package can be picked up more effectively. The upper limit of the value (Fb(T1)) of Fb(t) at temperature T1 is not particularly limited, but a substantial upper limit is, for example, 50 N / inch, and a more preferred upper limit is 20 N / inch.

[0057] The value of Fa(t) at 23°C (Fa(23°C)) is not particularly limited, but a preferred lower limit is 0.04 N / inch and a preferred upper limit is 1.5 N / inch. When Fa(23°C) is within the above range, it becomes easy to adjust Fb(t) / Fa(t), and pickup of the semiconductor package can be performed more satisfactorily. A more preferred lower limit of Fa(23°C) is 0.1 N / inch and a more preferred upper limit is 1 N / inch.

[0058] The value of Fb(t) at 23°C (Fb(23°C)) is not particularly limited, but a preferred lower limit is 3 N / inch and a preferred upper limit is 30 N / inch. By having Fb(23°C) within the above range, it becomes easy to adjust Fb(t) / Fa(t), and pickup of the semiconductor package can be performed more satisfactorily. A more preferred lower limit of Fb(23°C) is 5 N / inch and a more preferred upper limit is 7 N / inch.

[0059] The specific value of the above temperature T1 is not particularly limited, but taking into consideration the normal temperature when picking up a semiconductor package, a preferred lower limit is 25°C, a preferred upper limit is 200°C, a more preferred lower limit is 50°C, and a more preferred upper limit is 150°C. The method for picking up the semiconductor package while it is heated to the above temperature T1 is not particularly limited, and examples include a method in which the semiconductor package is picked up while being heated to temperature T1 by applying hot air using a die bonder device, and a method in which the semiconductor package is picked up while being heated to temperature T1 or higher and then maintained at temperature T1.

[0060] The measurement method of the Fa(t) may be, for example, the following method. First, the adhesive tape for semiconductor processing is placed on a copper plate (e.g., C1100P, manufactured by Engineering Test Services) so that the adhesive layer faces a copper plate satisfying JIS H3100:2018. The adhesive tape for semiconductor processing and the copper plate are bonded together by moving a 2 kg rubber roller back and forth at a speed of 600 mm / min. The laminate is heated while measuring the temperature of the back side (substrate side) of the adhesive tape for semiconductor processing with a temperature measuring sensor (e.g., A-231K-01-1-TC1-ANP, manufactured by Anritsu Meter Co., Ltd.) Using an autograph (manufactured by Shimadzu Corporation), the adhesive tape for semiconductor processing of the laminate heated to temperature t is peeled off in the 180° direction at a pulling speed of 300 mm / min under an environment of temperature t and humidity of 50%, and the peel force is measured. The copper plate used as the adherend for the adhesive tape for semiconductor processing refers to a copper plate that satisfies JIS H3100:2018 (e.g., C1100P, manufactured by Engineering Test Services Co., Ltd.), and was selected with the circuit surface of a semiconductor package in mind.

[0061] The measurement method of Fb(t) may be, for example, the following method. First, the adhesive layer of the adhesive tape for semiconductor processing is placed against a copper plate (C1100P) and bonded together using a double-sided tape (double-sided tape 560 manufactured by Sekisui Chemical Co., Ltd., or an equivalent product). The temporary fixing tape is placed on the adhesive tape for semiconductor processing so that the adhesive layer faces the back surface of the substrate of the adhesive tape for semiconductor processing. The temporary fixing tape and the adhesive tape for semiconductor processing are bonded together by moving a 2 kg rubber roller back and forth at a speed of 300 mm / min. The laminate is heated while measuring the temperature of the back surface (substrate side) of the temporary fixing tape with a temperature measuring sensor (for example, A-231K-01-1-TC1-ANP manufactured by Anritsu Meter Co., Ltd.). Using an autograph (manufactured by Shimadzu Corporation), the above temporary fixing tape of the laminate heated to temperature t is peeled off in a 180° direction at a pulling speed of 300 mm / min in an environment of temperature t and relative humidity 50%, and the peel strength is measured. From the obtained Fa(t) and Fb(t), the above Fb(t) / Fa(t) can be calculated.

[0062] When the adhesive layer of the adhesive tape for semiconductor processing is a photocurable adhesive layer, Fa(t) is measured after the adhesive tape for semiconductor processing is attached to a copper plate and before it is heated to a temperature t, by irradiating the adhesive layer of the adhesive tape for semiconductor processing with light to cure the adhesive layer. The method of irradiating the adhesive layer of the semiconductor processing adhesive tape with light is, for example, to irradiate 405 nm ultraviolet light with an integrated intensity of 2500 mJ / cm using an ultra-high pressure mercury ultraviolet irradiator. 2 The irradiation intensity is not particularly limited, but is preferably 50 to 100 mW / cm. 2 is preferred.

[0063] In order to adjust Fb(t) / Fa(t), it is only necessary to adjust the specific values ​​of Fa(t) and Fb(t). As a method for adjusting the Fa(t), in addition to the method for adjusting the temperature t, for example, the method for adjusting the type, composition, physical properties, etc. of the adhesive layer of the adhesive tape for semiconductor processing as described above can be mentioned. As a method for adjusting the Fb(t) within the above range, in addition to the method for adjusting the temperature t, for example, the method for adjusting the type, composition, physical properties, etc. of the substrate of the adhesive tape for semiconductor processing as described above, and the method for forming an easy-adhesion layer as described above on the surface of the substrate of the adhesive tape for semiconductor processing opposite to the adhesive layer, i.e., on the back surface can be mentioned. In addition, a method for adjusting the type, composition, physical properties, etc. of the adhesive layer of the temporary fixing tape can also be mentioned.

[0064] A diagram showing a schematic diagram of an example of a method for producing a semiconductor device of the present invention is shown in Fig. 1. Hereinafter, the method for producing a semiconductor device of the present invention will be described with reference to Fig. 1. In FIG. 1, the adhesive tape 2 for semiconductor processing is a one-sided support type having a base material 2b and an adhesive layer 2a laminated on one side of the base material 2b, but in the manufacturing method for a semiconductor device of the present invention, the adhesive tape 2 for semiconductor processing may be a non-support type that does not have a base material 2b.

[0065] In the method for manufacturing a semiconductor device of the present invention, first, a step (1-1) of attaching an adhesive tape 2 for semiconductor processing to the circuit surface of a semiconductor package 4 may be performed as shown in FIG. 1(a). When the adhesive layer of the semiconductor processing adhesive tape is a photocurable adhesive layer, after the step (1-1), it is preferable to carry out a step (1-3) of irradiating the adhesive layer of the semiconductor processing adhesive tape with light (not shown). In the manufacturing method of the semiconductor device of the present invention, a step (1-2) may then be carried out in which the semiconductor package 4 to which the adhesive tape for semiconductor processing 2 is attached is diced to obtain individual semiconductor packages 4 to which the adhesive tape for semiconductor processing 2 is attached, as shown in Figure 1(b).

[0066] In the manufacturing method of the semiconductor device of the present invention, a step (1) may then be performed in which a semiconductor package 4 having an adhesive tape 2 for semiconductor processing attached thereto is temporarily fixed onto a temporary fixing tape 3 with the adhesive tape 2 for semiconductor processing in contact with the temporary fixing tape 3, as shown in Figure 1(c).

[0067] In the manufacturing method of the semiconductor device of the present invention, a step (2) may then be carried out in which a metal film 5 is formed on the back and side surfaces of the semiconductor package 4 to which the adhesive tape for semiconductor processing 2 is attached on the temporary fixing tape 3, as shown in Figure 1(d).

[0068] By carrying out the steps shown in Figures 1(a) to 1(d), a semiconductor processing laminate can be obtained in which a semiconductor package 4 having an adhesive tape 2 for semiconductor processing attached thereto is laminated on a temporary fixing tape 3 with the adhesive tape 2 for semiconductor processing in contact with the temporary fixing tape 3, and a metal film 5 is formed on the back and side surfaces of the semiconductor package 4 having the adhesive tape 2 for semiconductor processing attached thereto. In the method for manufacturing a semiconductor device of the present invention, in such a semiconductor processing laminate, as shown in Fig. 1(e), a step (3) is performed in which a semiconductor package 4 having a metal film 5 formed on its back surface and side surfaces is picked up from the adhesive tape for semiconductor processing 2. This makes it possible to obtain a semiconductor package having a metal film formed on its back surface and side surfaces. In the above step (3), the semiconductor package having the metal film formed on the back surface and side surfaces is picked up in a state where the semiconductor package has been heated to a temperature T1 that satisfies the following formula (1): 100<{Fb(T1) / Fa(T1)} (1) In formula (1), Fa(t) represents the peeling force of the adhesive tape for semiconductor processing from the copper plate at temperature t, Fa(T1) represents the value of Fa(t) at temperature t = T1, Fb(t) represents the peeling force of the temporary fixing tape from the adhesive tape for semiconductor processing at temperature t, and Fb(T1) represents the value of Fb(t) at temperature t = T1.

[0069] A laminate for semiconductor processing, which is an intermediate product of the method for producing a semiconductor device of the present invention, also constitutes the present invention.

[0070] The semiconductor processing laminate of the present invention is a semiconductor processing laminate in which a semiconductor package having an adhesive tape for semiconductor processing attached thereto is laminated on a temporary fixing tape so that the adhesive tape for semiconductor processing is in contact with the semiconductor processing adhesive tape side, and the semiconductor processing laminate has a temperature T2 that satisfies the following formula (1') in the temperature range of 25 to 200°C. 100<{Fb(T2) / Fa(T2)} (1') In formula (1'), Fa(t) represents the peel force of the adhesive tape for semiconductor processing from a copper plate at temperature t, Fa(T2) represents the value of Fa(t) at temperature t = T2, Fb(t) represents the peel force of the temporary fixing tape from the adhesive tape for semiconductor processing at temperature t, and Fb(T2) represents the value of Fb(t) at temperature t = T2.

[0071] The specific value of the temperature T2 is 25° C. at the lower limit and 200° C. at the upper limit. Considering the normal temperature when picking up a semiconductor package, the specific value of the temperature T2 is preferably 50° C. at the lower limit and 150° C. at the upper limit.

[0072] The semiconductor processing laminate of the present invention may further have a metal film formed on the back and side surfaces of the semiconductor package to which the pressure-sensitive adhesive tape for semiconductor processing is attached. Effect of the Invention

[0073] According to the present invention, it is possible to provide a method for manufacturing a semiconductor device and a laminate for semiconductor processing, which can suppress peeling at the interface between a temporary fixing tape and an adhesive tape for semiconductor processing and enable good pick-up of a semiconductor package. [Brief description of the drawings]

[0074] [Figure 1] 1(a) to 1(e) are diagrams illustrating an example of a method for manufacturing a semiconductor device according to the present invention. [Diagram 2] 1(a1) to (a4) are diagrams illustrating the steps of a method for manufacturing a semiconductor device in an embodiment and a reference example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0075] The present invention will be described in more detail below with reference to examples, but the present invention is not limited to these examples.

[0076] Example 1 (1) Synthesis of adhesive polymer A reactor equipped with a thermometer, a stirrer, and a cooling tube was prepared. 93 parts by weight of 2-ethylhexyl acrylate as an alkyl (meth)acrylate ester, 1 part by weight of acrylic acid as a functional group-containing monomer, 6 parts by weight of hydroxyethyl methacrylate, 0.01 parts by weight of lauryl mercaptan, and 80 parts by weight of ethyl acetate were added into the reactor, and the reactor was heated to start reflux. Next, 0.01 parts by weight of 1,1-bis(t-hexylperoxy)-3,3,5-trimethylcyclohexane was added as a polymerization initiator into the reactor, and polymerization was started under reflux. Next, 0.01 parts by weight of 1,1-bis(t-hexylperoxy)-3,3,5-trimethylcyclohexane was added one hour and two hours after the start of polymerization, and further 0.05 parts by weight of t-hexylperoxypivalate was added four hours after the start of polymerization to continue the polymerization reaction. Then, 8 hours after the start of polymerization, an ethyl acetate solution of a functional group-containing (meth)acrylic polymer having a solid content of 55% by weight and a weight average molecular weight of 600,000 was obtained. 3.5 parts by weight of 2-isocyanatoethyl methacrylate was added to 100 parts by weight of the resin solid content of the obtained ethyl acetate solution containing the functional group-containing (meth)acrylic polymer and reacted to obtain an adhesive polymer.

[0077] (2) Manufacturing of adhesive tapes for semiconductor processing To 100 parts by weight of the resin solid content of the ethyl acetate solution of the adhesive polymer obtained above, 1 part by weight of silicone compound, 3 parts by weight of inorganic filler, 10 parts by weight of urethane acrylate, 0.2 parts by weight of crosslinking agent, and 1 part by weight of photopolymerization initiator were added, and mixed at a stirring speed of 100 rpm to obtain an adhesive solution. Next, the adhesive solution was applied with a doctor knife to a release-treated surface of a polyethylene terephthalate film whose surface had been subjected to a release treatment so that the thickness after drying was 40 μm, and the adhesive layer was obtained by heating and drying at 105 ° C for 5 minutes. The obtained adhesive layer was bonded to the corona-treated surface of the substrate A, one side of which had been subjected to a corona treatment, and cured at 40 ° C for 6 days to obtain an adhesive tape for semiconductor processing.

[0078] The substrate A, silicone compound, inorganic filler, urethane acrylate, crosslinking agent, and photopolymerization initiator used were as follows. Substrate A (polyethylene terephthalate, G' = 1.7 × 10 9 Pa, bending stiffness per unit width = 1.8 x 10 -5 N m 2 / m, thickness = 50μm) Silicone compound (EBECRYL350, Daicel Cytec Co., Ltd.) Inorganic filler (silica filler, Leoloseal MT-10, Tokuyama Corporation) Urethane acrylate (UN-5500, manufactured by Negami Chemical Industries, Ltd.) Crosslinking agent (isocyanate-based crosslinking agent, Coronate L, manufactured by Nippon Urethane Industry Co., Ltd.) Photopolymerization initiator (Irgacure 369, manufactured by BASF)

[0079] (3) Measurement of storage modulus G' of adhesive layer A measurement sample consisting of only the adhesive layer was prepared in the same manner as in the manufacture of adhesive tapes for semiconductor processing. A 10 mm wide rectangular test piece was prepared from the measurement sample. Using an ultra-high pressure mercury ultraviolet irradiator, ultraviolet rays of 405 nm were irradiated with an integrated intensity of 2500 mJ / cm. 2The adhesive layer was irradiated from the release film side of the test piece so that the adhesive layer was cured. After removing the release films on both sides of the cured test piece, measurements were performed using a viscoelasticity spectrometer (DVA-200, manufactured by IT Measurement & Control Co., Ltd.) under the conditions of a constant temperature rise tensile mode, a temperature rise rate of 10°C / min, and a frequency of 10Hz. The storage modulus at 23°C at this time was recorded as the storage modulus of the adhesive layer.

[0080] (4) Measurement of Fa(23℃) and Fa(T1) The surface of a 1 mm thick copper plate (copper plate meeting JIS H3100:2018, C1100P, manufactured by Engineering Test Services) was washed with ethanol and thoroughly dried. An adhesive tape for semiconductor processing, previously cut to a width of 25 mm and a length of 10 cm, was attached to the copper plate by rolling a 2 kg roller back and forth once to obtain a laminate. Using an ultra-high pressure mercury ultraviolet irradiator, the adhesive layer was irradiated with 405 nm ultraviolet light from the substrate side for 25 seconds to harden the adhesive layer. The irradiation intensity was 100 mW / cm 2 The illuminance was adjusted so that Fa(T1) was measured. Thereafter, in the measurement of Fa(T1), the laminate was heat-treated using an oven that had been heated to the temperature T1 shown in Table 1. The laminate was heated to the temperature T1 while measuring the temperature of the back side (substrate side) of the adhesive tape for semiconductor processing with a temperature measuring sensor (A-231K-01-1-TC1-ANP, manufactured by Anritsu Meter Co., Ltd.). Using an autograph (manufactured by Shimadzu Corporation), the laminated semiconductor processing adhesive tape was peeled off in a 180° direction at a tensile speed of 300 mm / min in an environment of 23°C or temperature T1 and 50% humidity, and the peel forces Fa (23°C) and Fa (T1) were measured.

[0081] (5) Manufacturing of temporary fixing tapes To 100 parts by weight of the resin solid content of the ethyl acetate solution of the adhesive polymer obtained above, 10 parts by weight of urethane acrylate and 0.5 parts by weight of crosslinking agent were added and mixed at a stirring speed of 100 rpm to obtain an adhesive solution. Next, the adhesive solution was applied to the release-treated surface of a polyethylene terephthalate film whose surface had been subjected to a release treatment so that the thickness after drying was 5 μm with a doctor knife, and the adhesive layer was obtained by heating and drying at 105 ° C for 5 minutes. The obtained adhesive layer was bonded to the corona-treated surface of the substrate A whose one side had been subjected to a corona treatment, and the mixture was aged at 40 ° C for 6 days to obtain a temporary fixing tape. The adhesive strength of the temporary fixing tape to a copper plate (copper plate meeting JIS H3100:2018, C1100P, manufactured by Engineering Test Services) was measured and found to be 6.5 N / inch.

[0082] (6) Measurement of Fb (23°C) and Fb (T1) In the manufacture of adhesive tape for semiconductor processing, the surface of the substrate before forming the adhesive layer (the surface on which the adhesive layer is formed) was attached to a copper plate (C1100P) using a double-sided tape (double-sided tape 560 manufactured by Sekisui Chemical Co., Ltd.). A temporary fixing tape previously cut to a width of 25 mm and a length of 10 cm was applied to the back surface of the substrate (the surface on which the adhesive layer is not formed) by rolling a 2 kg roller back and forth once to obtain a laminate. Thereafter, in the measurement of Fb (T1), the laminate was heat-treated using an oven heated to a temperature T1 shown in Table 1. The laminate was heated to a temperature T1 while measuring the temperature of the back surface of the temporary fixing tape (the substrate side of the temporary fixing tape) with a temperature measuring sensor (manufactured by Anritsu Meter Co., Ltd., A-231K-01-1-TC1-ANP). Using an autograph (manufactured by Shimadzu Corporation), the temporary fixing tape of the laminate was peeled off in a 180° direction at a pulling speed of 300 mm / min in an environment of a temperature of 23°C or a temperature T1 and a humidity of 50%, and the peel force Fb (23°C) and Fb (T1) were measured.

[0083] (7) Measurement of PU force and PU force at temperature T1 The back side (substrate side) of the adhesive tape for semiconductor processing was attached to the dicing tape, and the diced substrates, each measuring 10 mm x 10 mm, were attached to the adhesive layer side with a roller. Using a benchtop tensile compression tester (MCT-2150, manufactured by A&D), the diced substrates were picked up from the back side (substrate side) of the adhesive tape for semiconductor processing. The force required to peel off the diced substrates was measured and recorded as the PU (pick up) force. Regarding the PU force at temperature T1, the individualized substrate was attached to an adhesive tape for semiconductor processing, and then the laminate was heat-treated using an oven heated to temperature T1. The temperature of the back side (substrate side) of the adhesive tape for semiconductor processing was measured with a temperature measuring sensor (A-231K-01-1-TC1-ANP, manufactured by Anritsu Meter Co., Ltd.), and the laminate was picked up in the same manner while heated to temperature T1, and the PU force at temperature T1 was measured.

[0084] (8) Manufacturing of semiconductor devices The steps shown in (a1) to (a4) of FIG. 2 were carried out as follows. An adhesive tape 2 for semiconductor processing was attached to the copper foil 7a side of a copper-clad laminate substrate 7 (Mitsubishi Gas Chemical Company, CCL-EL190T / GEPL-190T) (FIG. 2(a1)). Using an ultra-high pressure mercury ultraviolet irradiator, 405 nm ultraviolet light was irradiated onto the adhesive layer 2a from the substrate 2b side for 25 seconds to cure the adhesive layer 2a. The irradiation intensity was 100 mW / cm 2 The illuminance was adjusted so that The copper-clad laminate substrate 7 with the adhesive tape 2 for semiconductor processing attached was temporarily fixed on a dicing tape 8 (Elegrip UPH-1510M4, manufactured by Denka) with the copper-clad laminate substrate 7 side in contact, and was attached to a dicing frame 9 (Figure 2(a2)). The copper-clad laminate substrate 7 with the adhesive tape 2 for semiconductor processing attached thereto was diced (cut into chips) into 10 mm square pieces using a dicing device (DISCO Corp., DFD6361) (FIG. 2(a3)).

[0085] Using an ultra-high pressure mercury ultraviolet irradiator, ultraviolet rays of 405 nm are irradiated with an integrated intensity of 2500 mJ / cm 2The dicing tape 8 was cured by irradiating the dicing tape 8 so that the irradiation intensity was 50 mW / cm 2 The illuminance was adjusted so that the dicing tape 8 was then peeled off. The copper-clad laminate substrate 7 with the individualized adhesive tape for semiconductor processing 2 attached was temporarily fixed on the temporary fixing tape 3 with the adhesive tape for semiconductor processing 2 side in contact, and was then attached again to the dicing frame 9 (Figure 2 (a4)). The copper-clad laminate substrate 7 with the individualized adhesive tape for semiconductor processing 2 attached thereto was heated for 1 hour together with the dicing frame 9 in an oven that had been heated to 150°C. The "heating at 150°C for 1 hour" was set based on the temperature and time required for shielding a semiconductor package. After the predetermined time had elapsed, the copper-clad laminate substrate 7 with the individualized adhesive tape for semiconductor processing 2 attached thereto was removed together with the dicing frame 9 and allowed to cool sufficiently in an environment with a temperature of 23°C and a relative humidity of 50%. Using a die bonder (BestemD02, manufactured by Canon Machinery), the individual copper-clad laminate substrates 7 were picked up while being heated to temperature T1 shown in Table 1 by applying hot air thereto.

[0086] (Examples 2 to 8, Reference Examples 1 to 5) An adhesive tape for semiconductor processing and a temporary fixing tape were obtained in the same manner as in Example 1, except that the composition of the adhesive layer and the base material were changed as shown in Table 1. Each physical property was measured and a semiconductor device was produced in the same manner as in Example 1. Base material B (polyethylene terephthalate, G' = 1.7 × 10 9 Pa, bending stiffness per unit width = 1.4×10-4N m 2 / m, thickness = 100μm) Substrate C (polyethylene terephthalate, G' = 1.7 × 10 9 Pa, bending stiffness per unit width = 2.2×10-6 N m 2 / m, thickness = 25μm)

[0087] <Evaluation> The adhesive tapes for semiconductor processing, the temporary fixing tapes, and the methods for producing semiconductor devices in the Examples and Reference Examples were evaluated by the following methods. The results are shown in Table 1.

[0088] (1) Pick-up evaluation (1-1) Interfacial peeling between semiconductor package and adhesive tape When the pick up force at temperature T1 was less than 1 N, it was judged as A; when it was 1 N or more but less than 5 N, it was judged as B; when it was 5 N or more but less than 10 N, it was judged as C; and when it was 10 N or more (the individualized substrate did not peel off), it was judged as D.

[0089] (1-2) Adhesion of temporary fixing tape to the back surface of adhesive tape In the manufacturing of the semiconductor device (8) above, when picking up the individualized copper-clad laminate substrate 7, peeling at the interface between the back surface (substrate side) of the adhesive tape 2 for semiconductor processing and the temporary fixing tape 3 was evaluated. The case where there was no peeling at all at the interface was judged as A, the case where there was a peeled part at the interface but it was less than half of the total area was judged as B, the case where there was a peeled part at the interface and it was more than half of the total area but the peeling was not complete was judged as C, and the case where the adhesive tape for semiconductor processing 2 was completely peeled off from the temporary fixing tape 3 was judged as D.

[0090] (2) Evaluation of other processes (other than pick-up) In the manufacturing of the semiconductor device (8) above, 50 copper-clad laminate substrates 7 after individualization (chip formation) were randomly selected, and the interface between the copper-clad laminate substrate 7 and the adhesive tape 2 for semiconductor processing was observed with an optical microscope to check for the presence or absence of peeling at the edges, and dicing peeling was evaluated according to the following criteria. Among the 50 samples, if there were no samples with end peeling of 300 μm or more, it was judged as A, if the number of samples with end peeling of 300 μm or more was less than 5%, it was judged as B, and if the number of samples with end peeling of 300 μm or more was 5% or more, it was judged as C. If the end peeling is less than 300 μm, there is less metal wrap around during sputtering, and the yield is improved.

[0091] [Table 1] [Industrial Applicability]

[0092] According to the present invention, it is possible to provide a method for manufacturing a semiconductor device and a laminate for semiconductor processing, which can suppress peeling at the interface between a temporary fixing tape and an adhesive tape for semiconductor processing and enable good pick-up of a semiconductor package. [Explanation of symbols]

[0093] 2. Adhesive tape for semiconductor processing 2a Adhesive layer 2b Base material 3 Temporary Fixing Tape 4. Semiconductor Package 5 Metal Film 6 Pickup needle 7 Copper-clad laminate board 7a copper foil 8 Dicing Tape 9 Dicing Frame

Claims

1. A method for manufacturing a semiconductor device, comprising: In a semiconductor processing laminate in which a semiconductor package to which an adhesive tape for semiconductor processing has been affixed is laminated on a temporary fixing tape so that the adhesive tape for semiconductor processing is in contact with the semiconductor processing adhesive tape, and a metal film is formed on the back surface and side surface of the semiconductor package to which the adhesive tape for semiconductor processing has been affixed, the semiconductor processing laminate has a step (3) of picking up the semiconductor package having the metal film formed on the back surface and side surface from the adhesive tape for semiconductor processing, In the step (3), the temperature T satisfies the following formula (1): １ The semiconductor package having the metal film formed on the rear and side surfaces is picked up while being heated to a temperature of 1000.

4. A method for manufacturing a semiconductor device comprising the steps of: 100<{Fb(T １ ) / Fa(T １ )} (1) In formula (1), Fa(t) represents the peel strength of the adhesive tape for semiconductor processing to the copper plate at temperature t, and Fa(T １ ) is the temperature of Fa(t) at t = T １ and Fa(T 1 ) is smaller than the value of Fa(t) at 23° C. (Fa(23° C.)); Fb(t) represents the peeling force of the temporary fixing tape against the adhesive tape for semiconductor processing at temperature t, and Fb(T １ ) is the temperature of Fb(t) at t=T １ Represents the value at .

2. Before step (3), A step (1) of temporarily fixing a semiconductor package to which an adhesive tape for semiconductor processing has been affixed, on a temporary fixing tape so that the adhesive tape for semiconductor processing is in contact with the semiconductor package; A step (2) of forming a metal film on the back surface and side surfaces of the semiconductor package to which the adhesive tape for semiconductor processing is attached is performed on the temporary fixing tape.

2. The method for manufacturing a semiconductor device according to claim 1.

3. Temperature T of Fa(t) １ The value at (Fa(T １ 3. The method for manufacturing a semiconductor device according to claim 1, wherein the applied force is 0.5 N / inch or less.

4. 4. The method for manufacturing a semiconductor device according to claim 1, wherein the value of Fa(t) at 23[deg.] C. (Fa(23[deg.] C.)) is 0.04 N / inch or more.

5. 5. The method for manufacturing a semiconductor device according to claim 1, 2, 3 or 4, wherein the value of Fb(t) at 23[deg.] C. (Fb(23[deg.] C.)) is 3 N / inch or more.

6. Temperature T of Fb(t) １ The value at (Fb(T １ 6. The method of claim 1, 2, 3, 4 or 5, wherein the pressing force is 1 N / inch or more and 50 N / inch or less.

7. Before step (1), A step (1-1) of attaching an adhesive tape for semiconductor processing to a circuit surface of a semiconductor package; A step (1-2) of dicing the semiconductor package to which the adhesive tape for semiconductor processing is attached to obtain individual semiconductor packages to which the adhesive tape for semiconductor processing is attached.

7. The method for manufacturing a semiconductor device according to claim 1, 2, 3, 4, 5 or 6.

8. 8. The method for manufacturing a semiconductor device according to claim 7, wherein the adhesive tape for semiconductor processing has a substrate and an adhesive layer laminated on at least one surface of the substrate, the adhesive layer being a photocurable adhesive layer.

9. 9. The method for producing a semiconductor device according to claim 8, further comprising the step of: (1-3) irradiating the adhesive layer of the adhesive tape for semiconductor processing with light, after the step (1-1).

10. A semiconductor processing laminate in which a semiconductor package to which an adhesive tape for semiconductor processing is attached is laminated on a temporary fixing tape so that the adhesive tape side for semiconductor processing is in contact with the semiconductor processing laminate, Within the temperature range of 25 to 200° C., a temperature T ２ have A laminate for semiconductor processing. 100<{Fb(T ２ ) / Fa(T ２ )} (1’) In formula (1'), Fa(t) represents the peel strength of the adhesive tape for semiconductor processing to the copper plate at temperature t, and Fa(T ２ ) is the temperature of Fa(t) at t = T ２ and Fa(T 2 ) is smaller than the value of Fa(t) at 23° C. (Fa(23° C.)); Fb(t) represents the peeling force of the temporary fixing tape against the adhesive tape for semiconductor processing at temperature t, and Fb(T ２ ) is the temperature of Fb(t) at t=T ２ Represents the value at .

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