Semiconductor Device

Abstract

A semiconductor device comprising a first conductive plate that has a first main surface facing in the thickness direction, a second conductive plate that has a second main surface facing the same side as the first main surface and that is separated from the first conductive plate in a first direction orthogonal to the thickness direction, a plurality of semiconductor elements joined to the first main surface, and a conductive member. Each semiconductor element has an electrode provided on the side opposite that of the first main surface. The conductive member has a main body, a plurality of first joint portions individually and electrically joined to respective electrodes of the plurality of semiconductor elements, and a second joint portion electrically joined to the second main surface. Further, the conductive member has a first connecting portion that connects the main body and the plurality of first joint portions, and a second connecting portion that connects the main body and the second joint portion.

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor device on which a plurality of semiconductor elements such as switching elements are mounted. [Background technology]

[0002] Semiconductor devices equipped with multiple switching elements that convert current based on an electric signal are widely known. Such semiconductor devices are used in power conversion circuits such as inverters. Patent Document 1 discloses an example of a semiconductor device equipped with multiple switching elements. The semiconductor device includes multiple switching elements (semiconductor chips) bonded to a first metal pattern. Each of the multiple switching elements has a bottom electrode and a top electrode. The bottom electrode is electrically bonded to the first metal pattern. One end of each of multiple wires is electrically bonded to the top electrode. The other end of each of the multiple wires is electrically bonded to a second metal pattern located next to the first metal pattern.

[0003] In the semiconductor device disclosed in Patent Document 1, electrical continuity between the multiple switching elements and the second metal pattern is achieved by multiple wires. For this reason, the semiconductor device is not suitable for passing a larger current. Furthermore, each of the multiple wires is individually bonded to the upper electrodes of the multiple switching elements and the second metal pattern. For this reason, it takes time to bond the multiple wires, which is a factor that leads to a decrease in the manufacturing efficiency of the semiconductor device. Therefore, improvements in these areas are desired. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2016-72421 A Summary of the Invention [Problem to be solved by the invention]

[0005] In view of the above circumstances, an object of the present disclosure is to provide a semiconductor device capable of handling a larger current while improving the manufacturing efficiency of the device. [Means for solving the problem]

[0006] The semiconductor device provided by the present disclosure includes a first conductive plate having a first main surface facing a thickness direction, a second conductive plate having a second main surface facing the same side as the first main surface in the thickness direction and positioned away from the first conductive plate in a first direction perpendicular to the thickness direction, a plurality of semiconductor elements having electrodes provided on the side toward which the first main surface faces in the thickness direction and joined to the first main surface, and a conductive member electrically joined to each of the electrodes of the plurality of semiconductor elements and the second main surface. The conductive member has a main body, a plurality of first bonding portions individually and electrically joined to the electrodes of the plurality of semiconductor elements, a second bonding portion electrically joined to the second main surface, a first connecting portion connecting the main body and the plurality of first bonding portions, and a second connecting portion connecting the main body and the second bonding portions. Effect of the Invention

[0007] According to the semiconductor device according to the present disclosure, it is possible to improve the manufacturing efficiency of the device while handling a larger current.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. [Brief description of the drawings]

[0009] [Figure 1] 1 is a perspective view of a semiconductor device according to a first embodiment of the present disclosure. [Diagram 2] FIG. 2 is a plan view of the semiconductor device shown in FIG. [Diagram 3] FIG. 3 is a plan view corresponding to FIG. 2 and seen through the sealing resin. [Figure 4]2 is a bottom view of the semiconductor device shown in FIG. 1. [Diagram 5] FIG. 2 is a front view of the semiconductor device shown in FIG. [Figure 6] 2 is a right side view of the semiconductor device shown in FIG. [Figure 7] FIG. 4 is a cross-sectional view taken along line VII-VII in FIG. [Figure 8] FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. [Figure 9] FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. [Figure 10] FIG. 4 is a cross-sectional view taken along line XX in FIG. [Figure 11] FIG. 4 is a cross-sectional view taken along line XI-XI in FIG. [Figure 12] 2 is a plan view of a first conductive member of the semiconductor device shown in FIG. [Figure 13] 2 is a plan view of a second conductive member of the semiconductor device shown in FIG. 1. [Figure 14] FIG. 4 is a partially enlarged view of FIG. [Figure 15] FIG. 8 is a partially enlarged view of FIG. [Figure 16] FIG. 4 is a partially enlarged view of FIG. [Figure 17] FIG. 9 is a partially enlarged view of FIG. 8. [Figure 18] FIG. 8 is a partially enlarged view of FIG. [Figure 19] FIG. 4 is a perspective view of a semiconductor device according to a second embodiment of the present disclosure. [Figure 20] FIG. 20 is a perspective view corresponding to FIG. 19, in which the sealing resin is omitted. [Figure 21] 20 is a perspective view corresponding to FIG. 19, in which the sealing resin and the second conductive member are omitted. [Figure 22] FIG. 20 is a plan view of the semiconductor device shown in FIG. [Figure 23] FIG. 23 is a plan view corresponding to FIG. 22, seen through the sealing resin. [Figure 24] FIG. 24 is a partially enlarged view of FIG. 23. [Diagram 25]23 is a plan view corresponding to FIG. 22, in which the sealing resin and the second conductive member are omitted. [Figure 26] FIG. 26 is a partially enlarged view of FIG. [Figure 27] 20 is a right side view of the semiconductor device shown in FIG. 19. [Figure 28] 20 is a bottom view of the semiconductor device shown in FIG. 19. [Figure 29] 20 is a rear view of the semiconductor device shown in FIG. 19. [Diagram 30] FIG. 20 is a front view of the semiconductor device shown in FIG. [Diagram 31] FIG. 24 is a cross-sectional view taken along line XXXI-XXXI in FIG. 23. [Diagram 32] 24 is a cross-sectional view taken along line XXXII-XXXII in FIG. 23. [Diagram 33] FIG. 33 is a partially enlarged view of FIG. 32. [Diagram 34] FIG. 24 is a cross-sectional view taken along line XXXIV-XXXIV in FIG. 23. [Diagram 35] 24 is a cross-sectional view taken along line XXXV-XXXV in FIG. 23. [Diagram 36] 24 is a cross-sectional view taken along line XXXVI-XXXVI in FIG. 23. [Figure 37] FIG. 20 is a circuit diagram of the semiconductor device shown in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present disclosure will be described with reference to the accompanying drawings.

[0011] A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 18. The semiconductor device A10 includes a first conductive plate 11, a second conductive plate 12, a first input terminal 13, an output terminal 14, a second input terminal 15, a plurality of semiconductor elements 20, a die bonding layer 23, a first conductive member 31, a plurality of first bonding layers 33, a second bonding layer 34, and a sealing resin 50. In the semiconductor device A10, the plurality of semiconductor elements 20 includes a pair of switching elements 21 and a pair of protection elements 22. The semiconductor device A10 further includes a first gate terminal 161, a second gate terminal 162, a first detection terminal 171, a second detection terminal 172, a second conductive member 32, a plurality of third bonding layers 35, a fourth bonding layer 36, a pair of gate wires 41, and a pair of detection wires 42. Here, FIG. 3 shows the sealing resin 50 through the sealing resin 50 for ease of understanding. In FIG. 3, the through sealing resin 50 is shown by an imaginary line (two-dot chain line). In FIG. 3, line IX-IX and line XX are respectively indicated by dashed dotted lines.

[0012] In the description of semiconductor device A10, for convenience, the thickness direction of each of first conductive plate 11 and second conductive plate 12 is referred to as "thickness direction z." The direction perpendicular to thickness direction z is referred to as "first direction x." The direction perpendicular to both thickness direction z and first direction x is referred to as "second direction y."

[0013] The semiconductor device A10 converts a DC power supply voltage applied to a first input terminal 13 and a second input terminal 15 into AC power by a pair of switching elements 21. The converted AC power is input to a power supply target such as a motor from an output terminal 14. The semiconductor device A10 is used in a power conversion circuit such as an inverter.

[0014] As shown in FIG. 3, FIG. 7, and FIG. 8, the first conductive plate 11 is a conductive member on which one of the pair of switching elements 21 (first element 21A described later) and one of the pair of protection elements 22 (first diode 22A described later) are mounted. The first conductive plate 11 is composed of the same lead frame together with the second conductive plate 12, the first input terminal 13, the output terminal 14, the second input terminal 15, the first gate terminal 161, the second gate terminal 162, the first detection terminal 171, and the second detection terminal 172. The lead frame is made of copper (Cu) or a copper alloy. Therefore, the composition of each of the first conductive plate 11, the second conductive plate 12, the first input terminal 13, the output terminal 14, the second input terminal 15, the first gate terminal 161, the second gate terminal 162, the first detection terminal 171, and the second detection terminal 172 includes copper (i.e., each member contains copper). The first conductive plate 11 has a first main surface 111 and a first back surface 112. The first main surface 111 faces the thickness direction z. A first element 21A, which will be described later, and a first diode 22A, which will be described later, are mounted on the first main surface 111. The first back surface 112 faces the opposite side to the first main surface 111 in the thickness direction z. The first back surface 112 is plated with, for example, tin (Sn). As shown in FIGS. 7 and 8, the thickness T1 of the first conductive plate 11 is set to be equal to or less than the maximum thickness t of the first conductive member 31. max is greater than

[0015] As shown in FIG. 3, FIG. 7, and FIG. 8, the second conductive plate 12 is a conductive member on which the other of the pair of switching elements 21 (a second element 21B described later) and one of the pair of protective elements 22 (a second diode 22B described later) are mounted. The second conductive plate 12 is located away from the first conductive plate 11 in the first direction x. The second conductive plate 12 has a second main surface 121 and a second back surface 122. The second main surface 121 faces the same side as the first main surface 111 in the thickness direction z. A second element 21B described later and a second diode 22B described later are mounted on the second main surface 121. The second back surface 122 faces the opposite side to the second back surface 122 in the thickness direction z. The second back surface 122 is, for example, tin-plated. As shown in FIG. 7 and FIG. 8, the thickness T2 of the second conductive plate 12 is set to a value smaller than the maximum thickness t of the first conductive member 31. max is greater than

[0016] As shown in FIG. 3 and FIG. 7, the pair of switching elements 21 includes a first element 21A and a second element 21B. The first element 21A is bonded to the first main surface 111 of the first conductive plate 11. The second element 21B is bonded to the second main surface 121 of the second conductive plate 12. The pair of switching elements 21 are, for example, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). In the description of the semiconductor device A10, the pair of switching elements 21 are n-channel type MOSFETs having a vertical structure. Each of the pair of switching elements 21 includes a compound semiconductor substrate. The compound semiconductor substrate contains silicon carbide (SiC). Alternatively, the compound semiconductor substrate may contain gallium nitride (GaN). As shown in FIG. 15, each of the pair of switching elements 21 has a first electrode 211, a second electrode 212, and a third electrode 213.

[0017] 15, the first electrode 211 is provided to face either the first main surface 111 of the first conductive plate 11 or the second main surface 121 of the second conductive plate 12. A voltage corresponding to the power to be converted is applied to the first electrode 211. In other words, the first electrode 211 corresponds to a drain electrode.

[0018] As shown in FIG. 15, the second electrode 212 is provided on the side to which the first main surface 111 of the first conductive plate 11 faces in the thickness direction z, i.e., on the opposite side to the first electrode 211. A current corresponding to the power converted by one of the pair of switching elements 21 flows through the second electrode 212. That is, the second electrode 212 corresponds to a source electrode. The second electrode 212 includes a plurality of metal plating layers. The second electrode 212 includes a nickel (Ni) plating layer and a gold (Au) plating layer laminated on the nickel plating layer. Alternatively, the second electrode 212 may include a nickel plating layer, a palladium (Pd) plating layer laminated on the nickel plating layer, and a gold plating layer laminated on the palladium plating layer.

[0019] As shown in Figs. 14 and 15, the third electrode 213 is provided on the same side as the second electrode 212 in the thickness direction z, and is located away from the second electrode 212. A gate voltage for driving one of the pair of switching elements 21 is applied to the third electrode 213. That is, the third electrode 213 corresponds to a gate electrode. In each of the pair of switching elements 21, a current corresponding to the voltage applied to the first electrode 211 is converted based on the gate voltage. When viewed along the thickness direction z, the area of ​​the third electrode 213 is smaller than the area of ​​the second electrode 212.

[0020] As shown in FIG. 3 and FIG. 8, the pair of protection elements 22 includes a first diode 22A and a second diode 22B. The first diode 22A is bonded to the first main surface 111 of the first conductive plate 11. The second diode 22B is bonded to the second main surface 121 of the second conductive plate 12. The pair of protection elements 22 are, for example, Schottky barrier diodes. The first diode 22A is connected in parallel to the first element 21A. The second diode 22B is connected in parallel to the second element 21B. Each of the pair of protection elements 22 is a so-called freewheeling diode that, when a reverse bias is applied to each of the pair of switching elements 21, causes a current to flow not to the switching element 21 but to the protection element 22 connected in parallel thereto. As shown in FIG. 18, each of the pair of protection elements 22 has an upper electrode 221 and a lower electrode 222.

[0021] 17, the upper electrode 221 is provided on the side toward which the first main surface 111 of the first conductive plate 11 faces in the thickness direction z (the upper side in FIG. 17). In each of the pair of protection elements 22, the upper electrode 221 is electrically connected to the second electrode 212 of one of the pair of switching elements 21 connected in parallel to the protection element 22. In other words, the upper electrode 221 corresponds to an anode electrode.

[0022] 17, the lower electrode 222 is provided on the opposite side to the upper electrode 221 in the thickness direction z. In each of the pair of protection elements 22, the lower electrode 222 is electrically connected to the first electrode 211 of one of a pair of switching elements 21 connected in parallel to the protection element 22. In other words, the lower electrode 222 corresponds to a cathode electrode.

[0023] 3, the first elements 21A and the first diodes 22A are arranged along the second direction y on the first main surface 111 of the first conductive plate 11. The second elements 21B and the second diodes 22B are arranged along the second direction y on the second main surface 121 of the second conductive plate 12. In this manner, in the semiconductor device A10, a plurality of semiconductor elements 20 are arranged along the second direction y.

[0024] As shown in FIG. 3, FIG. 15, and FIG. 18, the die bonding layer 23 includes a portion located between the first main surface 111 of the first conductive plate 11 and the second main surface 121 of the second conductive plate 12, the first electrodes 211 of the pair of switching elements 21, and the lower electrodes 222 of the pair of protection elements 22. The die bonding layer 23 has electrical conductivity. The die bonding layer 23 is, for example, lead-free solder. Alternatively, the die bonding layer 23 may be lead solder. The die bonding layer 23 electrically connects the first electrode 211 of the first element 21A and the lower electrode 222 of the first diode 22A to the first main surface 111. As a result, the first electrode 211 of the first element 21A and the lower electrode 222 of the first diode 22A are electrically connected to the first conductive plate 11. The die bonding layer 23 electrically connects the first electrode 211 of the second element 21B and the lower electrode 222 of the second diode 22B to the second main surface 121. As a result, the first electrode 211 of the second element 21B and the lower electrode 222 of the second diode 22B are electrically connected to the second conductive plate 12.

[0025] As shown in FIG. 3, the first input terminal 13 includes a portion extending along the second direction y and is connected to the first conductive plate 11. Therefore, the first input terminal 13 is electrically connected to the first conductive plate 11. The first input terminal 13 is a P terminal (positive electrode) to which a DC power supply voltage to be converted is applied. The first input terminal 13 has a covering portion 13A and an exposed portion 13B. As shown in FIG. 9, the covering portion 13A is connected to the first conductive plate 11 and is covered with a sealing resin 50. When viewed along the first direction x, the covering portion 13A is bent. As shown in FIGS. 2 to 5, the exposed portion 13B is connected to the covering portion 13A and is exposed from the sealing resin 50. The exposed portion 13B extends toward a side away from the first conductive plate 11 in the second direction y. The surface of the exposed portion 13B is, for example, tin-plated.

[0026] As shown in FIG. 3, the output terminal 14 includes a portion extending along the second direction y and is connected to the second conductive plate 12. Therefore, the output terminal 14 is electrically connected to the second conductive plate 12. AC power converted by the pair of switching elements 21 is output from the output terminal 14. The output terminal 14 has a covering portion 14A and an exposed portion 14B. The covering portion 14A is connected to the second conductive plate 12 and is covered with a sealing resin 50 (see FIG. 11). When viewed along the first direction x, the covering portion 14A is bent in the same manner as the covering portion 13A of the first input terminal 13. As shown in FIGS. 2 to 5, the exposed portion 14B is connected to the covering portion 14A and is exposed from the sealing resin 50. The exposed portion 14B extends toward a side away from the second conductive plate 12 in the second direction y. The surface of the exposed portion 14B is, for example, tin-plated.

[0027] As shown in FIG. 3, the second input terminal 15 is located away from both the first conductive plate 11 and the second conductive plate 12 in the second direction y, and is located between the first input terminal 13 and the output terminal 14 in the first direction x. The second input terminal 15 extends along the second direction y. The second input terminal 15 is electrically connected to the second electrode 212 of the second element 21B and the upper electrode 221 of the second diode 22B. The second input terminal 15 is an N terminal (negative electrode) to which a DC power supply voltage to be the subject of power conversion is applied. The second input terminal 15 has a covering portion 15A and an exposed portion 15B. As shown in FIG. 10, the covering portion 15A is covered with a sealing resin 50. As shown in FIGS. 2 to 5, the exposed portion 15B is connected to the covering portion 15A and is exposed from the sealing resin 50. Exposed portion 15B extends in second direction y away from both first conductive plate 11 and second conductive plate 12. The surface of exposed portion 15B is plated with, for example, tin.

[0028] As shown in FIG. 3, the first gate terminal 161 is located away from the first conductive plate 11 in the second direction y and is located at one end in the first direction x. As shown in FIG. 3, the second gate terminal 162 is located away from the second conductive plate 12 in the second direction y and is located at the other end in the first direction x. The first gate terminal 161 is electrically connected to the third electrode 213 of the first element 21A. A gate voltage for driving the first element 21A is applied to the first gate terminal 161. The second gate terminal 162 is electrically connected to the third electrode 213 of the second element 21B. A gate voltage for driving the second element 21B is applied to the second gate terminal 162.

[0029] As shown in Fig. 3, the first gate terminal 161 has a covered portion 161A and an exposed portion 161B. As shown in Fig. 11, the covered portion 161A is covered with sealing resin 50. As shown in Figs. 2 to 5, the exposed portion 161B is connected to the covered portion 161A and is exposed from the sealing resin 50. The exposed portion 161B extends toward a side away from the first conductive plate 11 in the second direction y. The surface of the exposed portion 161B is plated with, for example, tin.

[0030] As shown in Fig. 3, the second gate terminal 162 has a covered portion 162A and an exposed portion 162B. As shown in Fig. 11, the covered portion 162A is covered with the sealing resin 50. As shown in Figs. 2 to 5, the exposed portion 162B is connected to the covered portion 162A and is exposed from the sealing resin 50. The exposed portion 162B extends toward a side away from the second conductive plate 12 in the second direction y. The surface of the exposed portion 162B is plated with, for example, tin.

[0031] As shown in FIG. 3, the first detection terminal 171 is located away from the first conductive plate 11 in the second direction y, and is located between the first input terminal 13 and the first gate terminal 161 in the first direction x. As shown in FIG. 3, the second detection terminal 172 is located away from the second conductive plate 12 in the second direction y, and is located between the output terminal 14 and the second gate terminal 162 in the first direction x. The first detection terminal 171 is electrically connected to the second electrode 212 of the first element 21A. A voltage corresponding to a current flowing through the second electrode 212 of the first element 21A is applied to the first detection terminal 171. The second detection terminal 172 is electrically connected to the second electrode 212 of the second element 21B. A voltage corresponding to a current flowing through the second electrode 212 of the second element 21B is applied to the second detection terminal 172.

[0032] As shown in Fig. 3, the first detection terminal 171 has a covered portion 171A and an exposed portion 171B. As shown in Fig. 11, the covered portion 171A is covered with sealing resin 50. As shown in Figs. 2 to 5, the exposed portion 171B is connected to the covered portion 171A and is exposed from the sealing resin 50. The exposed portion 171B extends toward a side away from the first conductive plate 11 in the second direction y. The surface of the exposed portion 171B is plated with, for example, tin.

[0033] As shown in Fig. 3, the second detection terminal 172 has a covered portion 172A and an exposed portion 172B. As shown in Fig. 11, the covered portion 172A is covered with sealing resin 50. As shown in Figs. 2 to 5, the exposed portion 172B is connected to the covered portion 172A and is exposed from the sealing resin 50. The exposed portion 172B extends toward a side away from the second conductive plate 12 in the second direction y. The surface of the exposed portion 172B is plated with, for example, tin.

[0034] 5, in the semiconductor device A10, the height h of each of the exposed portion 13B of the first input terminal 13, the exposed portion 14B of the output terminal 14, and the exposed portion 15B of the second input terminal 15 are all the same. Furthermore, each of these has the same thickness. Therefore, when viewed along the first direction x, at least a portion (exposed portion 15B) of the second input terminal 15 overlaps each of the first input terminal 13 and the output terminal 14 (see FIG. 6).

[0035] As shown in FIG. 3, the first conductive member 31 is electrically connected to the second electrode 212 of the first element 21A, the upper electrode 221 of the first diode 22A, and the second main surface 121 of the second conductive plate 12. As a result, the second electrode 212 of the first element 21A and the upper electrode 221 of the first diode 22A are electrically connected to the second conductive plate 12 while being mutually electrically connected. The first conductive member 31 contains copper. In the semiconductor device A10, the first conductive member 31 is a metal clip. As shown in FIG. 12, the first conductive member 31 has a main body 311, a plurality of first joints 312, a first connecting portion 313, a second joint 314, and a second connecting portion 315.

[0036] As shown in Fig. 12, the main body 311 forms a main portion of the first conductive member 31. The main body 311 extends along the second direction y. As shown in Figs. 7 and 8, the main body 311 is parallel to the first main surface 111 of the first conductive plate 11. As shown in Fig. 3, a portion of the main body 311 overlaps the first main surface 111 when viewed along the thickness direction z.

[0037] As shown in FIGS. 3, 7 and 8, the multiple first junctions 312 are individually and electrically joined to the second electrode 212 of the first element 21A and the upper electrode 221 of the first diode 22A. Each of the multiple first junctions 312 faces either the second electrode 212 of the first element 21A or the upper electrode 221 of the first diode 22A. As shown in FIGS. 14 and 16, each of the multiple first junctions 312 has an opening 312A. The opening 312A penetrates one of the multiple first junctions 312 in the thickness direction z. The opening 312A has a circular shape when viewed along the thickness direction z. The opening area of ​​the opening 312A is 0.25 mm 2 That is all. Each of the multiple first junctions 312 includes an overlapping region 312B. When viewed along the thickness direction z, the overlapping region 312B refers to a region (excluding the opening 312A) that overlaps with either the second electrode 212 of the first element 21A or the upper electrode 221 of the first diode 22A. When viewed along the thickness direction z, the area of ​​the overlapping region 312B is 70% or more of the area of ​​each of the second electrode 212 of the first element 21A and the upper electrode 221 of the first diode 22A.

[0038] 7 and 12, the first coupling portion 313 couples the main body 311 and the multiple first joint portions 312. As shown in Fig. 7, when viewed in the second direction y, the first coupling portion 313 is inclined in a direction away from the first main surface 111 of the first conductive plate 11 as it goes from the multiple first joint portions 312 toward the main body 311. When viewed in the second direction y, the magnitude of the acute angle α (see Figs. 15 and 17) that the first coupling portion 313 forms with each of the multiple first joint portions 312 is not less than 30° and not more than 60°.

[0039] 3, 10 and 11, the second joint 314 is electrically joined to the second main surface 121 of the second conductive plate 12. The second joint 314 faces the second main surface 121. In the semiconductor device A10, the second joint 314 includes two regions spaced apart from each other in the second direction y.

[0040] 7, 8, and 12, second connecting portion 315 connects main body portion 311 and second bonding portion 314. When viewed along the in-plane direction of second main surface 121 of second conductive plate 12 (second direction y in semiconductor device A10), second connecting portion 315 is inclined in a direction away from second main surface 121 as it goes from second bonding portion 314 toward main body portion 311.

[0041] As shown in FIG. 15 and FIG. 17, each of the multiple first bonding layers 33 includes a portion located between either the second electrode 212 of the first element 21A or the upper electrode 221 of the first diode 22A and either of the multiple first bonding portions 312 of the first conductive member 31 facing thereto. The multiple first bonding layers 33 have electrical conductivity. The multiple first bonding layers 33 are, for example, lead-free solder. Alternatively, the multiple first bonding layers 33 may be lead solder. The multiple first bonding layers 33 individually and electrically bond the multiple first bonding portions 312 to the second electrode 212 of the first element 21A and the upper electrode 221 of the first diode 22A. Therefore, the first conductive member 31 is electrically bonded to the second electrode 212 of the first element 21A and the upper electrode 221 of the first diode 22A by the multiple first bonding layers 33. 14 and 16, when viewed along the thickness direction z, each of the multiple first bonding layers 33 includes a portion that protrudes outward from any of the overlapping regions 312B of the multiple first bonding portions 312. A fillet is formed in the first bonding layer 33 that protrudes outward from any of the overlapping regions 312B of the multiple first bonding portions 312. As shown in FIGS. 14 to 17, as the first bonding layer 33, which is solder, moves outward from the overlapping region 312B, the fillet has a shape in which the dimension of the fillet in the thickness direction z gradually decreases toward either the surface of the second electrode 212 of the first element 21A or the surface of the upper electrode 221 of the first diode 22A.

[0042] As shown in Figs. 15 and 17, the multiple first bonding layers 33 are in contact with the multiple first bonding portions 312 individually. Furthermore, each of the multiple first bonding layers 33 is also in contact with the inner circumferential surface of each of the multiple first bonding portions 312 that defines the opening 312A of that first bonding portion 312. Therefore, each of the multiple first bonding layers 33 includes a portion recessed into any of the openings 312A of the multiple first bonding portions 312. The thickness t of each of the multiple first bonding portions 312 is 0.1 mm or more, and the maximum thickness T of each of the multiple first bonding layers 33 is 0.1 mm or more. max Here, the maximum thickness T max does not include the portion of the first bonding layer 33 that penetrates into the opening 312A. max is greater than the thickness of each of the plurality of semiconductor elements 20.

[0043] As shown in FIG. 8 and FIG. 16, the second bonding layer 34 includes a portion located between the second main surface 121 of the second conductive plate 12 and the second bonding portion 314 of the first conductive member 31 facing thereto. The second bonding layer 34 has electrical conductivity. The second bonding layer 34 is, for example, a lead-free solder. Alternatively, the second bonding layer 34 may be a lead solder. The second bonding layer 34 electrically bonds the second bonding portion 314 and the second main surface 121. Therefore, the first conductive member 31 is electrically bonded to the second main surface 121 by the second bonding layer 34.

[0044] As shown in FIG. 3, the second conductive member 32 is joined to the second electrode 212 of the second element 21B, the upper electrode 221 of the second diode 22B, and the covering portion 15A of the second input terminal 15. As a result, the second electrode 212 of the second element 21B and the upper electrode 221 of the second diode 22B are electrically connected to the second input terminal 15 while being electrically connected to each other. The second conductive member 32 contains copper. In the semiconductor device A10, the second conductive member 32 is a metal clip. As shown in FIG. 13, the second conductive member 32 has a main body portion 321, a plurality of third joint portions 322, a third connecting portion 323, a fourth joint portion 324, and a fourth connecting portion 325.

[0045] 13, the main body 321 forms a main portion of the second conductive member 32. The main body 321 extends along the second direction y. As shown in FIGS. 7, 8, and 10, the main body 311 is parallel to the second main surface 121 of the second conductive plate 12. The main body 321 is located farther away from both the first main surface 111 and the second main surface 121 of the first conductive plate 11 than the main body 311 of the first conductive member 31, and straddles the second joint portion 314 of the first conductive member 31.

[0046] 3, 7, and 8, the multiple third junctions 322 are individually and electrically joined to the second electrode 212 of the second element 21B and the upper electrode 221 of the second diode 22B. Each of the multiple third junctions 322 faces either the second electrode 212 of the second element 21B or the upper electrode 221 of the second diode 22B.

[0047] 8 and 13, the third coupling portion 323 couples the main body portion 321 to the multiple third joint portions 322. As shown in Fig. 8, when viewed in the second direction y, the third coupling portion 323 is inclined in a direction away from the second main surface 121 of the second conductive plate 12 as it goes from the multiple third joint portions 322 toward the main body portion 321.

[0048] 3, 10, and 11, the fourth joint portion 324 is electrically joined to the covering portion 15A of the second input terminal 15. The fourth joint portion 324 faces the covering portion 15A.

[0049] 10, the fourth connecting portion 325 connects the main body portion 321 and the fourth joint portion 324. When viewed in the first direction x, the fourth connecting portion 325 is inclined in a direction away from the second main surface 121 of the second conductive plate 12 as it goes from the fourth joint portion 324 toward the main body portion 321.

[0050] Each of the multiple third bonding layers 35 includes a portion located between any of the second electrode 212 of the first diode 22A and the upper electrode 221 of the second diode 22B in FIG. 7 and FIG. 8 and any of the multiple third bonding portions 322 of the second conductive member 32 facing thereto. The multiple third bonding layers 35 have electrical conductivity. The multiple third bonding layers 35 are, for example, lead-free solder. Alternatively, the multiple third bonding layers 35 may be lead solder. The multiple third bonding layers 35 individually and electrically bond the multiple third bonding portions 322 to the second electrode 212 of the second element 21B and the upper electrode 221 of the second diode 22B. Therefore, the second conductive member 32 is electrically bonded to the second electrode 212 of the second element 21B and the upper electrode 221 of the second diode 22B by the multiple third bonding layers 35.

[0051] As shown in FIG. 10 and FIG. 11, the fourth bonding layer 36 includes a portion located between the covering portion 15A of the second input terminal 15 and the fourth bonding portion 324 of the second conductive member 32 facing the covering portion 15A. The fourth bonding layer 36 has electrical conductivity. The fourth bonding layer 36 is, for example, a lead-free solder. Alternatively, the fourth bonding layer 36 may be a lead solder. The fourth bonding layer 36 electrically bonds the fourth bonding portion 324 and the covering portion 15A. Therefore, the second conductive member 32 is electrically bonded to the covering portion 15A by the fourth bonding layer 36.

[0052] As shown in Fig. 3 and Fig. 14, the pair of gate wires 41 are individually and electrically joined to the third electrodes 213 of the pair of switching elements 21, the covering portion 161A of the first gate terminal 161, and the covering portion 162A of the second gate terminal 162. As a result, the first gate terminal 161 is electrically connected to the third electrode 213 of the first element 21A. The second gate terminal 162 is electrically connected to the third electrode 213 of the second element 21B. Each of the pair of gate wires 41 contains gold. Alternatively, each of the pair of gate wires 41 may contain copper or aluminum (Al).

[0053] 3 and 14, the pair of detection wires 42 are individually and electrically joined to the second electrodes 212 of the pair of switching elements 21, the covering portion 171A of the first detection terminal 171, and the covering portion 172A of the second detection terminal 172. As a result, the first detection terminal 171 is electrically connected to the second electrode 212 of the first element 21A. The second detection terminal 172 is electrically connected to the second electrode 212 of the second element 21B. Each of the pair of detection wires 42 contains gold. Alternatively, each of the pair of detection wires 42 may contain copper or aluminum.

[0054] As shown in Fig. 3 and Figs. 7 to 10, the sealing resin 50 covers the pair of switching elements 21, the pair of protection elements 22, the first conductive member 31, the second conductive member 32, and parts of the first conductive plate 11 and the second conductive plate 12. The sealing resin 50 has electrical insulation properties. The sealing resin 50 is made of a material containing, for example, a black epoxy resin. The sealing resin 50 has a top surface 51, a bottom surface 52, a pair of first side surfaces 53, a pair of second side surfaces 54, a plurality of recesses 55, and a groove portion 56.

[0055] 7 to 10, top surface 51 faces the same side as first main surface 111 of first conductive plate 11 in thickness direction z. As shown in Fig. 7 to 10, bottom surface 52 faces the opposite side to top surface 51 in thickness direction z. As shown in Fig. 4, first back surface 112 of first conductive plate 11 and second back surface 122 of second conductive plate 12 are exposed from bottom surface 52.

[0056] 2, 4 and 6, the pair of first side surfaces 53 are spaced apart from each other in the first direction x. Each of the pair of first side surfaces 53 is connected to the top surface 51 and the bottom surface 52.

[0057] As shown in Figs. 2, 4 and 5, the pair of second side surfaces 54 are located apart from each other in the second direction y. Each of the pair of second side surfaces 54 is connected to the top surface 51 and the bottom surface 52. As shown in Fig. 5, from one of the pair of second side surfaces 54, the exposed portion 13B of the first input terminal 13, the exposed portion 14B of the output terminal 14, and the exposed portion 15B of the second input terminal 15 are exposed. Furthermore, from the second side surface 54, the exposed portion 161B of the first gate terminal 161, the exposed portion 162B of the second gate terminal 162, the exposed portion 171B of the first detection terminal 171, and the exposed portion 172B of the second detection terminal 172 are exposed.

[0058] 2, 4, and 5, the recesses 55 are recessed in the first direction x from the second side surface 54 on which the exposed portion 13B of the first input terminal 13 and the like are exposed, and extend from the top surface 51 to the bottom surface 52 in the thickness direction z. In the first direction x, the recesses 55 are located individually between the first input terminal 13 and the first detection terminal 171, between the first input terminal 13 and the second input terminal 15, between the output terminal 14 and the second input terminal 15, and between the output terminal 14 and the second detection terminal 172. The recesses 55 ensure a longer creepage distance of the sealing resin 50 applied to any two of the first input terminal 13, the output terminal 14, the second input terminal 15, the first detection terminal 171, and the second detection terminal 172. Furthermore, a longer creepage distance is ensured for the sealing resin 50 between either the first gate terminal 161 or the second gate terminal 162 and either the first input terminal 13, the output terminal 14, or the second input terminal 15. This is advantageous in improving the withstand voltage of the semiconductor device A10.

[0059] As shown in FIGS. 4, 6, and 9 to 11, the groove 56 is recessed from the bottom surface 52 in the thickness direction z and extends along the first direction x. Both ends of the groove 56 in the first direction x are connected to a pair of first side surfaces 53. The groove 56 ensures a longer creepage distance of the sealing resin 50 between the first conductive plate 11 and the second conductive plate 12 and the first input terminal 13, the output terminal 14, the second input terminal 15, the first gate terminal 161, the second gate terminal 162, the first detection terminal 171, and the second detection terminal 172. This is preferable for improving the withstand voltage of the semiconductor device A10.

[0060] Next, the effects of the semiconductor device A10 will be described.

[0061] The semiconductor device A10 includes a conductive member (first conductive member 31) electrically connected to each of the electrodes of the multiple semiconductor elements 20 (the second electrode 212 of the first element 21A and the upper electrode 221 of the first diode 22A in the semiconductor device A10) and the second main surface 121 of the second conductive plate 12. The conductive member has a main body 311, multiple first bonding portions 312, a first connecting portion 313, a second bonding portion 314, and a third bonding layer 35. The multiple first bonding portions 312 are individually and electrically connected to the electrodes of the multiple semiconductor elements 20. The second bonding portion 314 is electrically connected to the second main surface 121. As a result, these portions of the conductive member are collectively bonded, so that the conductive member can be individually and electrically bonded to the electrodes of the multiple semiconductor elements 20 more efficiently in a shorter time. Therefore, according to the semiconductor device A10, it is possible to improve the manufacturing efficiency of the semiconductor device A10 while handling a larger current.

[0062] Each of the multiple first bonding portions 312 includes an overlapping region 312B overlapping with any of the electrodes of the multiple semiconductor elements 20 as viewed along the thickness direction z. As viewed along the thickness direction z, the area of ​​the overlapping region 312B is 70% or more of the area of ​​each electrode of the multiple semiconductor elements 20. This is suitable for alleviating thermal stress concentration acting on the first bonding layer 33 and each of the multiple first bonding portions 312 while allowing a larger current to flow through each of the multiple semiconductor elements 20.

[0063] When viewed along the thickness direction z, at least a portion of the main body 311 overlaps the first main surface 111 of the first conductive plate 11. This is effective in reducing the dimension of the semiconductor device A10 in the first direction x.

[0064] When viewed along the second direction y, the first connecting portion 313 is inclined in a direction away from the first main surface 111 of the first conductive plate 11 as it goes from the first bonding portion 312 toward the main body portion 311. This makes it easier to form a fillet located on one side of the first direction x of any of the electrodes of the multiple semiconductor elements 20 in each of the multiple first bonding layers 33. Therefore, it is possible to more effectively reduce the thermal stress concentration acting on the interface between each electrode of the multiple semiconductor elements 20 and the first bonding layer 33. In this case, when viewed along the second direction y, the magnitude of the acute angle α that the first connecting portion 313 makes with respect to the first bonding portion 312 is 30° or more and 60° or less, which is a shape of the fillet suitable for alleviating the thermal stress concentration. On the other hand, when the acute angle α is less than 30°, the distance between any of the multiple semiconductor elements 20 and the conductive member (first conductive member 31) becomes excessively small, which is not preferable from the viewpoint of preventing the breakdown of the semiconductor element 20. On the other hand, when the acute angle α exceeds 60°, the volume of the fillet formed in any one of the plurality of first bonding layers 33 becomes excessively large, and thermal stress generated in the first bonding layer 33 tends to concentrate. This is not preferable from the viewpoint of mitigating thermal stress concentration in the first bonding layer 33.

[0065] The thickness t of the first bonding portion 312 is the maximum thickness T max This makes it possible to reduce the concentration of thermal stress acting on the interface between the first bonding layer 33 and the first bonding portion 312 while ensuring the thermal durability of the first bonding layer 33.

[0066] Each of the multiple first bonding portions 312 has an opening 312A penetrating in the thickness direction z. When the first bonding portion 312 is electrically bonded to each electrode of the multiple semiconductor elements 20 by the first bonding layer 33, the opening 312A is provided so that air bubbles contained in the molten first bonding layer 33 can be released to the outside. Furthermore, the first bonding layer 33 is in contact with the inner circumferential surface of the first bonding portion 312 that defines the opening 312A. This provides the molten first bonding layer 33 with a self-alignment effect that positions the first bonding portion 312 at a predetermined position relative to the electrode of the switching element 21.

[0067] The conductive member contains copper, which can reduce the electrical resistance of the conductive member compared to wires containing aluminum, which is suitable for passing a larger current through the switching element 21.

[0068] The first conductive plate 11 contains copper. Furthermore, the thickness T1 of the first conductive plate 11 is smaller than the maximum thickness t max This makes it possible to improve the efficiency of heat conduction in the in-plane directions (first direction x and second direction y) of the first main surface 111 while improving the thermal conductivity of the first conductive plate 11. This contributes to improving the heat dissipation properties of the semiconductor device A10.

[0069] A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figs. 19 to 37. In these figures, elements that are the same as or similar to those of the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted. Here, Fig. 20 omits illustration of the sealing resin 50 for ease of understanding. Figs. 21 and 25 omit illustration of the sealing resin 50 and the second conductive member 32 for ease of understanding. Fig. 23 shows the sealing resin 50 through which light is transmitted. In Fig. 23, the transmitted sealing resin 50 is shown by imaginary lines.

[0070] The semiconductor device A20 further comprises a support substrate 60, a pair of first diode terminals 181, a pair of second diode terminals 182, a pair of control wirings 70, and a plurality of diode wires 43 in addition to the semiconductor device A10.

[0071] As shown in Fig. 20 and Fig. 21, the support substrate 60 supports the first conductive plate 11 and the second conductive plate 12. In the semiconductor device A20, the support substrate 60 is composed of a DBC (Direct Bonded Copper) substrate. As shown in Figs. 31 to 36, the support substrate 60 has an insulating layer 61, a pair of first metal layers 62, and a second metal layer 63. The support substrate 60 is covered with the sealing resin 50 except for a portion of the second metal layer 63.

[0072] 31 to 36, the insulating layer 61 includes a portion interposed between a pair of a first metal layer 62 and a second metal layer 63 in the thickness direction z. The insulating layer 61 is made of a material having relatively high thermal conductivity. The insulating layer 61 is made of ceramics including aluminum nitride (AlN), for example. The insulating layer 61 may be made of an insulating resin sheet other than ceramics.

[0073] As shown in FIG. 31 to FIG. 36, the pair of first metal layers 62 are located on one side of the insulating layer 61 in the thickness direction z. The pair of first metal layers 62 are located apart from each other in the first direction x. Each of the pair of first metal layers 62 contains copper. The first back surface 112 of the first conductive plate 11 is joined to one of the pair of first metal layers 62 by a bonding layer 69. The second back surface 122 of the second conductive plate 12 is joined to the other of the pair of first metal layers 62 by a bonding layer 69. This results in a configuration in which the first conductive plate 11 and the second conductive plate 12 are supported by the support substrate 60 in the semiconductor device A20. The bonding layer 69 is, for example, a brazing material containing silver (Ag). As shown in FIG. 25, each of the pair of first metal layers 62 is located inward from the periphery of the insulating layer 61 when viewed along the thickness direction z.

[0074] As shown in FIGS. 31 to 36, the second metal layer 63 is located on the other side of the insulating layer 61 in the thickness direction z. As shown in FIG. 28, a surface of the second metal layer 63 (a surface facing the thickness direction z) is exposed from the bottom surface 52 of the sealing resin 50. The surface is bonded to a heat sink (not shown). The second metal layer 63 contains copper. When viewed along the thickness direction z, the periphery of the second metal layer 63 is located inward from the periphery of the insulating layer 61.

[0075] As shown in FIG. 23 and FIG. 32, the first input terminal 13 is located on one side in the first direction x and is integrated with the first conductive plate 11. The first input terminal 13 extends from the first conductive plate 11 along the first direction x. The thickness of the first input terminal 13 is smaller than the thickness T1 of the first conductive plate 11. The output terminal 14 is located on the other side in the first direction x and is integrated with the second conductive plate 12 as shown in FIG. 23 and FIG. 32. In the semiconductor device A20, the output terminal 14 includes a pair of regions located apart from each other in the second direction y. Each of the pair of regions extends from the second conductive plate 12 along the first direction x. The thickness of each of the pair of regions is smaller than the thickness T2 of the second conductive plate 12. The second input terminal 15 is located on one side in the first direction x as shown in FIG. 23 and FIG. 31. The second input terminal 15 is located apart from the first conductive plate 11 in the first direction x. In the semiconductor device A20, the second input terminal 15 includes a pair of regions spaced apart from each other in the second direction y. The pair of regions are located on both sides of the first input terminal 13 in the second direction y. Each of the pair of regions extends along the first direction x.

[0076] In the semiconductor device A20, the multiple semiconductor elements 20 include multiple switching elements 21. As shown in FIG. 23 and FIG. 25, the multiple switching elements 21 include a pair of first elements 21A, a pair of second elements 21B, a third element 21C, and a fourth element 21D. Among these, the configurations of the third element 21C and the fourth element 21D are different from the configurations of the pair of first elements 21A and the pair of second elements 21B. The third element 21C and the fourth element 21D have the same configuration. The third element 21C is bonded to the first main surface 111 of the first conductive plate 11. The fourth element 21D is bonded to the second main surface 121 of the second conductive plate 12.

[0077] Each of the switching elements 21 includes a switching function unit Q1 and a free wheel diode D2 shown in FIG. 37. Among the switching elements 21, each of the third element 21C and the fourth element 21D includes a diode function unit D1 shown in FIG. 37 in addition to the switching function unit Q1 and the free wheel diode D2. Each of the third element 21C and the fourth element 21D further includes a fourth electrode 214 and a pair of fifth electrodes 215 in addition to the first electrode 211, the second electrode 212, and the third electrode 213. In each of the third element 21C and the fourth element 21D, the same current as that flowing through the second electrode 212 flows through the fourth electrode 214. In each of the third element 21C and the fourth element 21D, the pair of fifth electrodes 215 are electrically connected to the diode function unit D1.

[0078] As shown in Fig. 37, the semiconductor device A20 configures a half-bridge switching circuit. A pair of a first element 21A and a third element 21C configures an upper arm circuit. In the upper arm circuit, the pair of the first element 21A and the third element 21C are connected in parallel to each other. A pair of a second element 21B and a fourth element 21D configures a lower arm circuit. In the lower arm circuit, the pair of the second element 21B and the fourth element 21D are connected in parallel to each other.

[0079] 23 and 25, a pair of first elements 21A and a third element 21C are arranged along the second direction y on the first main surface 111 of the first conductive plate 11. A pair of second elements 21B and a fourth element 21D are arranged along the second direction y on the second main surface 121 of the second conductive plate 12. In this manner, a plurality of semiconductor elements 20 are also arranged along the second direction y in the semiconductor device A20.

[0080] The pair of control wirings 70 constitute a part of a conductive path between the first gate terminal 161, the second gate terminal 162, the first detection terminal 171, the second detection terminal 172, the pair of first diode terminals 181, and the pair of second diode terminals 182, and the multiple switching elements 21. As shown in FIG. 23 to FIG. 25, the pair of control wirings 70 includes a first wiring 70A and a second wiring 70B. In the first direction x, the first wiring 70A is located between the pair of the first element 21A and the third element 21C, and the first input terminal 13 and the second input terminal 15. The first wiring 70A is joined to the first main surface 111 of the first conductive plate 11. In the first direction x, the second wiring 70B is located between the pair of the second element 21B and the fourth element 21D, and the output terminal 14. The second wiring 70B is joined to the second main surface 121 of the second conductive plate 12. 32 and 36, each of the pair of control wires 70 has an insulating layer 71, a plurality of wiring layers 72, a metal layer 73, a plurality of holders 74, and a plurality of covering layers 75. The control wires 70 are covered with a sealing resin 50 except for a portion of each of the plurality of holders 74 and the plurality of covering layers 75.

[0081] 33, the insulating layer 71 includes a portion interposed between a plurality of wiring layers 72 and a metal layer 73 in the thickness direction z. The insulating layer 71 is made of, for example, ceramics. The insulating layer 71 may be made of an insulating resin sheet other than ceramics.

[0082] 33, the multiple wiring layers 72 are located on one side of the insulating layer 71 in the thickness direction z. Each of the multiple wiring layers 72 contains copper. As shown in FIG. 25, the multiple wiring layers 72 include a first wiring layer 721, a second wiring layer 722, and a pair of third wiring layers 723. When viewed along the thickness direction z, the area of ​​each of the pair of third wiring layers 723 is smaller than the area of ​​each of the first wiring layer 721 and the second wiring layer 722.

[0083] As shown in FIG. 33, the metal layer 73 is located on the other side of the insulating layer 71 in the thickness direction z. The metal layer 73 contains copper. The metal layer 73 of the first wiring 70A is joined to the first main surface 111 of the first conductive plate 11 by a bonding layer 78. The metal layer 73 of the second wiring 70B is joined to the second main surface 121 of the second conductive plate 12 by a bonding layer 78. The bonding layer 78 is made of a material that may or may not be conductive. The bonding layer 78 is, for example, lead-free solder.

[0084] As shown in FIG. 33, the multiple holders 74 are individually and electrically joined to the multiple wiring layers 72 by holder joining layers 79. The multiple holders 74 are made of a conductive material such as metal. Each of the multiple holders 74 is cylindrical and extends along the thickness direction z. The lower end of each of the multiple holders 74 in the thickness direction z is electrically joined to one of the multiple wiring layers 72. The upper end of each of the multiple holders 74 in the thickness direction z is exposed from the sealing resin 50. The holder joining layers 79 are conductive. The holder joining layers 79 are, for example, lead-free solder.

[0085] 32 and 36, the multiple coating layers 75 individually cover the upper ends of the multiple holders 74 in the thickness direction z. The multiple coating layers 75 are arranged individually in contact with second protrusions 58 of the sealing resin 50 described below. Each of the multiple coating layers 75 has electrical insulation properties. Each of the multiple coating layers 75 is made of a material containing synthetic resin.

[0086] In the semiconductor device A20, as shown in Figs. 19 to 21, the first gate terminal 161, the second gate terminal 162, the first detection terminal 171, the second detection terminal 172, the pair of first diode terminals 181, and the pair of second diode terminals 182 are each made of a metal pin extending in the thickness direction z. These terminals are individually press-fitted into the multiple holders 74 of the pair of control wirings 70. As a result, these terminals are individually supported by the multiple holders 74. Furthermore, as shown in Figs. 29, 30, and 36, a portion of each of these terminals is covered by one of the multiple covering layers 75 of the control wirings 70.

[0087] 24, the first gate terminal 161 is press-fitted into one of the multiple holders 74 that is joined to the first wiring layer 721 of the first wiring 70A. As a result, the first gate terminal 161 is supported by the holder 74 and is electrically connected to the first wiring layer 721 of the first wiring 70A.

[0088] 24 and 33, the first detection terminal 171 is press-fitted into one of the multiple holders 74 that is joined to the second wiring layer 722 of the first wiring 70A. As a result, the first detection terminal 171 is supported by the holder 74 and is electrically connected to the second wiring layer 722 of the first wiring 70A.

[0089] 24, the pair of first diode terminals 181 are individually press-fitted into the pair of holders 74 that are joined to the pair of third wiring layers 723 of the first wiring 70A, among the multiple holders 74. As a result, the pair of first diode terminals 181 are supported by the pair of holders 74 and are individually conductive to the pair of third wiring layers 723 of the first wiring 70A.

[0090] 25 and 36, the second gate terminal 162 is press-fitted into one of the multiple holders 74 that is joined to the first wiring layer 721 of the second wiring 70B. As a result, the second gate terminal 162 is supported by the holder 74 and is electrically connected to the first wiring layer 721 of the second wiring 70B.

[0091] 25 and 36, the second detection terminal 172 is press-fitted into one of the multiple holders 74 that is joined to the second wiring layer 722 of the second wiring 70B. As a result, the second detection terminal 172 is supported by the holder 74 and is electrically connected to the second wiring layer 722 of the second wiring 70B.

[0092] 25 and 36, the pair of second diode terminals 182 are individually press-fitted into the pair of holders 74 that are joined to the pair of third wiring layers 723 of the second wiring 70B, among the multiple holders 74. As a result, the pair of second diode terminals 182 are supported by the pair of holders 74 and are individually conductive to the pair of third wiring layers 723 of the second wiring 70B.

[0093] 25, the multiple gate wires 41 are individually and electrically connected to the third electrodes 213 of the multiple switching elements 21, the first wiring layer 721 of the first wiring 70A, and the first wiring layer 721 of the second wiring 70B. As a result, the first gate terminal 161 is electrically connected to the third electrodes 213 of the pair of first elements 21A and the third electrode 213 of the third element 21C. The second gate terminal 162 is electrically connected to the third electrodes 213 of the pair of second elements 21B and the third electrode 213 of the fourth element 21D.

[0094] 25, the detection wires 42 are individually and electrically connected to the second electrodes 212 of the pair of first elements 21A, the second electrodes 212 of the pair of second elements 21B, the fourth electrodes 214 of the third elements 21C, and the fourth electrodes 214 of the fourth elements 21D, and to the second wiring layer 722 of the first wiring 70A and the second wiring layer 722 of the second wiring 70B. As a result, the first detection terminal 171 is electrically connected to the second electrodes 212 of the pair of first elements 21A and the fourth electrode 214 of the third element 21C. The second detection terminal 172 is electrically connected to the second electrodes 212 of the pair of second elements 21B and the fourth electrode 214 of the fourth element 21D.

[0095] As shown in FIG. 25, the plurality of diode wires 43 are individually and electrically connected to the pair of fifth electrodes 215 of the third element 21C, the pair of fifth electrodes 215 of the fourth element 21D, the pair of third wiring layers 723 of the first wiring 70A, and the pair of third wiring layers 723 of the second wiring 70B. As a result, the pair of first diode terminals 181 are individually connected to the pair of fifth electrodes 215 of the third element 21C. The pair of second diode terminals 182 are individually connected to the pair of fifth electrodes 215 of the fourth element 21D. Each of the plurality of diode wires 43 contains gold. Alternatively, each of the plurality of diode wires 43 may contain copper or aluminum.

[0096] 25, the first conductive member 31 is electrically joined to the second electrodes 212 of the pair of first elements 21A, the second electrodes 212 of the third elements 21C, and the second main surface 121 of the second conductive plate 12. As a result, the second electrodes 212 of the pair of first elements 21A and the second electrode 212 of the third element 21C are electrically connected to the second conductive plate 12 while being mutually conductive.

[0097] 25, 26, and 33, in the semiconductor device A20, the multiple first joints 312 are individually and electrically joined to the second electrodes 212 of the pair of first elements 21A and the second electrode 212 of the third element 21C. Each of the multiple first joints 312 faces either the second electrodes 212 of the pair of first elements 21A or the second electrode 212 of the third element 21C.

[0098] In the semiconductor device A20, as shown in FIG. 25, the first coupling portion 313 of the first conductive member 31 includes a plurality of coupling regions 313A (three coupling regions 313A in FIG. 25). The plurality of coupling regions 313A are located apart from each other in the second direction y. The plurality of coupling regions 313A are individually connected to the plurality of first joint portions 312 of the first conductive member 31. As shown in FIG. 32, as viewed along the second direction y, each of the plurality of coupling regions 313A is inclined in a direction away from the first main surface 111 of the first conductive plate 11 as it moves from one of the plurality of first joint portions 312 toward the main body portion 311 of the first conductive member 31. As viewed along the second direction y, the magnitude of the acute angle α (see FIG. 33) formed by one of the plurality of first joint portions 312 and one of the plurality of coupling regions 313A connected to the first joint portion 312 is 30° or more and 60° or less.

[0099] 24, the second conductive member 32 is joined to the second electrodes 212 of the pair of second elements 21B, the second electrode 212 of the fourth element 21D, and the covering portion 15A of the second input terminal 15. As a result, the second electrodes 212 of the pair of second elements 21B and the second electrode 212 of the fourth element 21D are electrically connected to the second input terminal 15 while being electrically connected to each other. In the semiconductor device A20, as shown in FIG. 24, the second conductive member 32 has a pair of main body portions 321, a plurality of third joint portions 322, a plurality of third coupling portions 323, a pair of fourth joint portions 324, a pair of fourth coupling portions 325, a pair of intermediate portions 326, and a plurality of cross beam portions 327.

[0100] As shown in Fig. 24, the pair of main bodies 321 are located apart from each other in the second direction y. Each of the pair of main bodies 321 extends along the first direction x. As shown in Fig. 31, each of the pair of main bodies 321 is parallel to both the first main surface 111 of the first conductive plate 11 and the second main surface 121 of the second conductive plate 12. The pair of main bodies 321 are located apart from both the first main surface 111 and the second main surface 121 more than the main body 311 of the first conductive member 31.

[0101] As shown in FIG. 24, the pair of intermediate portions 326 are located apart from each other in the second direction y and are located between the pair of main body portions 321 in the second direction y. Each of the pair of intermediate portions 326 extends along the first direction x. The dimension of each of the pair of intermediate portions 326 in the first direction x is smaller than the dimension of each of the pair of main body portions 321 in the first direction x. When viewed along the thickness direction z, the pair of second elements 21B are located on both sides of one of the pair of intermediate portions 326 in the second direction y. When viewed along the thickness direction z, one of the pair of second elements 21B and the fourth element 21D are located on both sides of the other of the pair of intermediate portions 326 in the second direction y.

[0102] 24, the multiple third joints 322 are individually and electrically joined to the second electrodes 212 of the pair of second elements 21B and the second electrode 212 of the fourth element 21D. Each of the multiple third joints 322 faces either the second electrodes 212 of the pair of second elements 21B or the second electrode 212 of the fourth element 21D.

[0103] 24 and 35, a pair of the multiple third connecting portions 323 are connected to both ends in the second direction y of one of the multiple third joint portions 322. The pair of third connecting portions 323 are connected to the pair of intermediate portions 326, or to one of the pair of intermediate portions 326 and one of the pair of main portions 321. When viewed in the first direction x, each of the multiple third connecting portions 323 is inclined in a direction away from the second main surface 121 of the second conductive plate 12 as it moves from one of the multiple third joint portions 322 to one of the pair of main portions 321 or one of the pair of intermediate portions 326.

[0104] 24 and 31, the pair of fourth joints 324 are individually and electrically joined to a pair of regions of the covering portion 15A of the second input terminal 15. Each of the pair of fourth joints 324 faces one of the pair of regions of the covering portion 15A.

[0105] 24 and 31 , the pair of fourth connecting portions 325 individually connect the pair of main body portions 321 and the pair of fourth joint portions 324. When viewed in the second direction y, each of the pair of fourth connecting portions 325 is inclined in a direction away from the first main surface 111 of the first conductive plate 11 as it goes from one of the pair of fourth joint portions 324 to one of the pair of main body portions 321.

[0106] As shown in Fig. 24 and Fig. 34, the multiple cross beam portions 327 are arranged along the second direction y. When viewed along the thickness direction z, the multiple cross beam portions 327 include regions that individually overlap with the multiple first joint portions 312 of the first conductive member 31. Both ends of each of the multiple cross beam portions 327 in the second direction y are connected to the pair of intermediate portions 326, or to either of the pair of intermediate portions 326 and either of the pair of main body portions 321. When viewed along the first direction x, each of the multiple cross beam portions 327 is convex toward the side in the thickness direction z toward which the first main surface 111 of the first conductive plate 11 faces.

[0107] In the semiconductor device A20, as shown in Figures 22 and 27 to 30, the sealing resin 50 has a top surface 51, a bottom surface 52, a pair of first side surfaces 53, a pair of second side surfaces 54, a plurality of recesses 55, and a groove portion 56, as well as a plurality of first convex portions 57 and a plurality of second convex portions 58.

[0108] As shown in FIG. 27, FIG. 29, and FIG. 30, the first protrusions 57 protrude from the top surface 51 in the thickness direction z. As shown in FIG. 22, the first protrusions 57 are arranged at the four corners of the sealing resin 50 when viewed along the thickness direction z. The first protrusions 57 each have a truncated cone shape. As shown in FIG. 22 and FIG. 31, each of the first protrusions 57 has a mounting hole 571. The mounting hole 571 of each of the first protrusions 57 does not penetrate the mounting hole 571 in the thickness direction z. The first protrusions 57 are used when mounting a driver module on the semiconductor device A20. The driver module is responsible for driving and controlling the semiconductor device A20.

[0109] As shown in Figs. 27, 29, and 30, the second protrusions 58 protrude from the top surface 51 in the thickness direction z. As shown in Fig. 22, the second protrusions 58 are individually arranged with respect to the first gate terminal 161, the second gate terminal 162, the first detection terminal 171, the second detection terminal 172, the pair of first diode terminals 181, and the pair of second diode terminals 182. As shown in Figs. 32 and 36, each of the second protrusions 58 covers a part of any of the holders 74 of the pair of control wirings 70. From each of the second protrusions 58, the upper end of any of the holders 74 in the thickness direction z is exposed.

[0110] 29 and 30 , in the semiconductor device A20, exposed portion 13B of first input terminal 13 and exposed portion 15B of second input terminal 15 are exposed from one of the pair of first side surfaces 53. Exposed portion 14B of output terminal 14 is exposed from the other first side surface 53 of the pair of first side surfaces 53.

[0111] In the semiconductor device A20, as shown in Fig. 22, Fig. 28, and Fig. 29, the multiple recesses 55 are recessed in the first direction x from the first side surface 53 where the exposed portion 13B of the first input terminal 13 and the exposed portion 15B of the second input terminal 15 are exposed, and reach the top surface 51 to the bottom surface 52 in the thickness direction z. In the second direction y, the multiple recesses 55 are located on both sides of the first input terminal 13 in the second direction y. The multiple recesses 55 ensure a longer creepage distance of the sealing resin 50 applied to the first input terminal 13 and the second input terminal 15. This is preferable for improving the dielectric strength of the semiconductor device A20.

[0112] In the semiconductor device A20, as shown in FIGS. 27, 28, 31, and 32, the groove 56 is recessed from the bottom surface 52 in the thickness direction z and extends along the second direction y. Both ends of the groove 56 in the second direction y are connected to a pair of second side surfaces 54. The groove 56 includes a pair of regions located apart from each other in the first direction x. In the first direction x, the second metal layer 63 of the support substrate 60 is located between the pair of regions. The groove 56 ensures a longer creepage distance of the sealing resin 50 applied between the first input terminal 13 and the second input terminal 15 and the output terminal 14. This is preferable for improving the dielectric strength of the semiconductor device A20.

[0113] Next, the effects of the semiconductor device A20 will be described.

[0114] The semiconductor device A20 includes a conductive member (first conductive member 31) electrically connected to each of the electrodes of the plurality of semiconductor elements 20 (the second electrodes 212 of the pair of first elements 21A and the second electrode 212 of the fourth element 21D in the semiconductor device A20) and the second main surface 121 of the second conductive plate 12. The conductive member has a main body 311, a plurality of first bonding portions 312, a first connecting portion 313, a second bonding portion 314, and a third bonding layer 35. The plurality of first bonding portions 312 are individually and electrically connected to the electrodes of the plurality of semiconductor elements 20. The second bonding portion 314 is electrically connected to the second main surface 121. These portions of the conductive member are connected collectively. Therefore, the semiconductor device A20 can also handle a larger current while improving the manufacturing efficiency of the semiconductor device A20.

[0115] In the semiconductor device A20, the first connecting portion 313 of the first conductive member 31 includes a plurality of connecting regions 313A located apart from each other in the second direction y. The plurality of connecting regions 313A are individually connected to the plurality of first bonding portions 312 of the first conductive member 31. Furthermore, as viewed along the second direction y, each of the plurality of connecting regions 313A is inclined in a direction away from the first main surface 111 of the first conductive plate 11 as it moves from one of the plurality of first bonding portions 312 toward the main body portion 311 of the first conductive member 31. This makes it easier to form a fillet located on one side of the first direction x of any electrode of the plurality of semiconductor elements 20 in each of the plurality of first bonding layers 33. Furthermore, in a cross section of the first conductive member 31 that includes the boundary between each of the plurality of connecting regions 313A and the main body portion 311 and has the first direction x as an out-of-plane direction, the second moment of area of ​​the cross section is smaller, so that the bending process of the first connecting portion 313 relative to the main body portion 311 can be made easier.

[0116] The present disclosure is not limited to the above-described embodiment. The specific configuration of each part of the present disclosure can be freely designed in various ways.

[0117] The present disclosure includes the configurations described in the following appendices. Appendix 1. a first conductive plate having a first main surface facing in a thickness direction; a second conductive plate having a second main surface facing the same side as the first main surface in the thickness direction and positioned away from the first conductive plate in a first direction perpendicular to the thickness direction; a plurality of semiconductor elements each having an electrode provided on a side facing the first main surface in the thickness direction and bonded to the first main surface; a conductive member electrically connected to each of the electrodes of the plurality of semiconductor elements and the second main surface, The conductive member has a main body, a plurality of first joints individually and electrically joined to the electrodes of the plurality of semiconductor elements, a second joint electrically joined to the second main surface, a first connecting portion connecting the main body and the plurality of first joints, and a second connecting portion connecting the main body and the second joints. Appendix 2. each of the plurality of first bonding portions includes an overlapping region overlapping with any one of the electrodes of the plurality of semiconductor elements when viewed along the thickness direction; 2. The semiconductor device according to claim 1, wherein an area of ​​the overlapping region, as viewed along the thickness direction, is 70% or more of an area of ​​the electrodes of each of the plurality of semiconductor elements. Appendix 3. 3. The semiconductor device according to claim 2, wherein at least a portion of the main body overlaps the first main surface when viewed along the thickness direction. Appendix 4. the plurality of semiconductor elements are arranged along a second direction perpendicular to both the thickness direction and the first direction; The semiconductor device according to claim 2 or 3, wherein the main body portion extends along the second direction. Appendix 5. the first connecting portion includes a plurality of connecting regions spaced apart from each other in the second direction, The semiconductor device according to claim 4, wherein the multiple connection regions are individually connected to the multiple first junctions. Appendix 6. The semiconductor device described in Appendix 5, wherein, when viewed along the second direction, each of the multiple connection regions is inclined in a direction away from the first main surface as it moves from one of the multiple first joints toward the main body portion. Appendix 7. The semiconductor device of claim 6, wherein, when viewed along the second direction, the magnitude of the acute angle formed by each of the plurality of first junctions and any of the plurality of connecting regions connected to the first junctions is greater than or equal to 30° and less than or equal to 60°. Appendix 8. a plurality of first bonding layers that are electrically conductive and individually and electrically bond the plurality of first bonding portions to the electrodes of the plurality of semiconductor elements; A semiconductor device described in any one of Appendix 2 to 7, wherein, when viewed along the thickness direction, each of the multiple first bonding layers includes a portion that protrudes outward from the overlapping region of any of the multiple first bonding portions. Appendix 9. 9. The semiconductor device according to claim 8, wherein the first bonding layers contain tin. Appendix 10. 10. The semiconductor device according to claim 9, wherein the thickness of each of the plurality of first bonding portions is less than or equal to twice the maximum thickness of any of the plurality of first bonding layers in contact with that first bonding portion. Appendix 11. 11. The semiconductor device according to claim 10, wherein each of the plurality of first bonding layers has a maximum thickness of 100 μm or more. Appendix 12. Each of the plurality of first joints has an opening penetrating in the thickness direction, 12. The semiconductor device according to claim 8, wherein any one of the plurality of first bonding layers is in contact with an inner circumferential surface of the first bonding portion that defines the opening. Appendix 13. a second bonding layer that is conductive and electrically bonds the second bonding portion and the second main surface; 13. The semiconductor device according to claim 8, wherein the second bonding layer is made of the same material as the plurality of first bonding layers. Appendix 14. 14. The semiconductor device according to claim 1, wherein each of the first conductive plate, the second conductive plate, and the conductive member contains copper. Appendix 15. 15. The semiconductor device according to any one of claims 1 to 14, wherein the thickness of each of the first conductive plate and the second conductive plate is greater than a maximum thickness of the conductive member. Appendix 16. 16. The semiconductor device of claim 1, wherein, when viewed along an in-plane direction of the second main surface, the second connecting portion is inclined in a direction away from the second main surface as it extends from the second joint portion toward the main body portion. Appendix 17. a sealing resin that covers the semiconductor elements and the conductive member; 17. The semiconductor device according to claim 1, wherein the sealing resin is in contact with the first main surface and the second main surface. Appendix 18. the first conductive plate has a first back surface facing a side opposite to the first main surface in the thickness direction, the second conductive plate has a second back surface facing the opposite side to the second main surface in the thickness direction, 18. The semiconductor device according to claim 17, wherein the first back surface and the second back surface are exposed from the sealing resin. Appendix 19. 19. The semiconductor device according to any one of claims 1 to 18, wherein at least one of the plurality of semiconductor elements includes a compound semiconductor substrate. Appendix 20. 20. The semiconductor device according to claim 19, wherein the compound semiconductor substrate contains silicon carbide. [Explanation of symbols]

[0118] A10, A20: Semiconductor device 11: First conductive plate 111: First main surface 112: First back surface 12: second conductive plate 121: second main surface 122: 2nd rear 13: 1st input terminal 13A: Covered portion 13B: Exposed portion 14: Output terminal 14A: Covering part 14B: exposed part 15: second input terminal 15A: Covered portion 15B: Exposed portion 161: First gate terminal 161A: Covering portion 161B: exposed portion 162: second gate terminal 162A: Covered part 162B: Exposed part 171: First detection terminal 171A: Covering portion 171B: exposed part 172: second detection terminal 172A: Covered part 172B: Exposed part 181: First diode terminal 182: Second diode terminal 20: Semiconductor element 21: Switching element 21A: First element 21B: Second element 21C: 3rd element 21D: 4th element 211: 1st electrode 212: 2nd electrode 213: Third electrode 214: Fourth electrode 215: Fifth electrode 22: Protective element 22A: First diode 22B: Second diode 221: Top electrode 222: Bottom electrode 23: Die bonding layer 31: First conductive member 311: Main body 312: First joint 312A: Opening 312B: Overlapping area 313: First connection part 313A: Connection area 314:Second joint part 315:Second connection part 32: Second conductive member 321: Main body 322: Third joint 322A: Opening 323: Third connection part 324: Fourth joint part 325: 4th connecting section 326: Middle section 327: Cross beam part 33: 1st bonding layer 34: Second bonding layer 35: Third bonding layer 36: Fourth bonding layer 41: Gate wire 42: Detector wire 43: Diode wire 50: Sealing resin 51: Top surface 52: Bottom 53: First side 54: Second side 55: Recess 56: Groove portion 57: First protrusion portion 571: Mounting hole 58: Second protrusion 60: Support substrate 61: Insulating layer 62: First metal layer 63: Second metal layer 69: Bonding layer 70: Control wiring 70A: First wiring 70B: Second wiring 71: Insulation layer 72: Wiring layer 721: First wiring layer 722: Second wiring layer 723: Third wiring layer 73: Metal layer 74: Holder 75: Covering layer 78: Bonding layer 79: Holder bonding layer z: thickness direction x: 1st direction y: 2nd direction

Claims

1. a first conductive plate having a first main surface facing in a thickness direction; a second conductive plate having a second main surface facing the same side as the first main surface in the thickness direction and positioned away from the first conductive plate in a first direction perpendicular to the thickness direction; a plurality of semiconductor elements each having an electrode provided on a side facing the first main surface in the thickness direction and bonded to the first main surface; a conductive member electrically connected to each of the electrodes of the semiconductor elements and the second main surface, the conductive member has a main body, a plurality of first joints individually and electrically joined to the electrodes of the plurality of semiconductor elements, a second joint electrically joined to the second main surface, a first coupling portion coupling the main body and the plurality of first joints, and a second coupling portion coupling the main body and the second joints; each of the plurality of first bonding portions includes an overlapping region overlapping with any one of the electrodes of the plurality of semiconductor elements as viewed in the thickness direction; When viewed in the thickness direction, an area of ​​the overlapping region is 70% or more of an area of ​​the electrodes of each of the plurality of semiconductor elements; a plurality of first bonding layers that are electrically conductive and that individually and electrically bond the plurality of first bonding portions to the electrodes of the plurality of semiconductor elements; A semiconductor device, wherein, when viewed in the thickness direction, each of the multiple first bonding layers includes a portion that protrudes outward beyond the overlapping region of any of the multiple first bonding portions.

2. A semiconductor device as described in claim 1, wherein, when viewed in the thickness direction, at least a portion of the main body portion overlaps the first main surface.

3. The plurality of semiconductor elements are arranged along a second direction perpendicular to each of the thickness direction and the first direction, The semiconductor device according to claim 1 , wherein the main body portion extends along the second direction.

4. The first connecting portion includes a plurality of connecting regions spaced apart from each other in the second direction, The semiconductor device according to claim 3 , wherein the plurality of coupling regions are individually connected to the plurality of first bonding portions.

5. A semiconductor device as described in claim 4, wherein, when viewed in the second direction, each of the multiple connecting regions is inclined in a direction away from the first main surface the further from one of the multiple first joints toward the main body portion.

6. A semiconductor device as described in claim 5, wherein, when viewed in the second direction, the magnitude of the acute angle formed by any of the multiple connecting regions connected to each of the multiple first joints is greater than or equal to 30° and less than 60°.

7. A semiconductor device as described in any one of claims 1 to 6, wherein each of the plurality of first bonding layers contains tin.

8. A semiconductor device as described in any one of claims 1 to 7, wherein the thickness of each of the multiple first junctions is less than or equal to twice the maximum thickness of any of the multiple first junction layers in contact with the first junction.

9. The semiconductor device described in Claim 8, wherein the maximum thickness of each of the multiple first bonding layers is 100 μm or more.

10. A second bonding layer having electrical conductivity and electrically bonding the second bonding portion and the second main surface, The semiconductor device according to claim 1 , wherein the second bonding layer is made of the same material as the plurality of first bonding layers.

11. A semiconductor device as described in any one of claims 1 to 10, wherein each of the first conductive plate, the second conductive plate and the conductive member all contain copper.

12. A semiconductor device as described in any one of claims 1 to 11, wherein the thickness of each of the first conductive plate and the second conductive plate is greater than the maximum thickness of the conductive member.

13. A semiconductor device as described in any one of claims 1 to 12, wherein, when viewed in the in-plane direction of the second main surface, the second connecting portion is inclined in a direction away from the second main surface as it moves from the second joint portion toward the main body portion.

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