Substrate processing apparatus, processing method, semiconductor device manufacturing method and program

Abstract

To provide a substrate processing device, a substrate processing method, a manufacturing method of a semiconductor device, a cleaning method and a program which can reduce the influence of an unintended film formed on a substrate placement table.SOLUTION: A substrate processing device 100 supplies process gas to a processing chamber in such a state that there is a substrate on a substrate placement surface 211 of a substrate placement table 21 arranged in the processing chamber 201, and supplies cleaning gas and cleaning auxiliary gas to a side surface 212a of the substrate placement table in such a state that there is no substrate on the substrate placement surface.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, a method for manufacturing a semiconductor device, a cleaning method, and a program. [Background technology]

[0002] A substrate processing apparatus used in one step of a semiconductor device manufacturing process is configured to supply a processing gas to a processing chamber and process the substrate while the substrate is placed on a substrate mounting table provided in the processing chamber (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2015-183271 A Summary of the Invention [Problem to be solved by the invention]

[0004] An unintended film may be formed on the substrate support table, which may affect the substrate processing.

[0005] The present disclosure provides a technique capable of reducing the influence of an unintended film formed on a substrate mounting table. [Means for solving the problem]

[0006] According to one aspect of the present disclosure, there is provided a technology for supplying a processing gas to a processing chamber when a substrate is present on a substrate mounting surface of a substrate mounting table disposed in the processing chamber, and for supplying a cleaning gas and a cleaning auxiliary gas to a side surface of the substrate mounting table when the substrate is not present on the substrate mounting surface. Effect of the Invention

[0007] According to the present disclosure, it is possible to reduce the influence of an unintended film formed on a substrate mounting table. [Brief description of the drawings]

[0008] [Figure 1] 1 is a schematic configuration diagram of a substrate processing apparatus according to an embodiment of the present disclosure. [Diagram 2] FIG. 2 is an explanatory diagram illustrating a gas supply system of the substrate processing apparatus according to an embodiment of the present disclosure. [Diagram 3] FIG. 2 is an explanatory diagram illustrating a gas supply system of the substrate processing apparatus according to an embodiment of the present disclosure. [Figure 4] FIG. 2 is an explanatory diagram illustrating a controller of the substrate processing apparatus according to an embodiment of the present disclosure. [Diagram 5] FIG. 1 is a flow diagram illustrating a substrate processing process according to one embodiment of the present disclosure. [Figure 6] FIG. 1 is a flow diagram illustrating details of a substrate processing process according to one embodiment of the present disclosure. [Figure 7] FIG. 4 is a flow diagram illustrating details of a cleaning process according to one embodiment of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. Hereinafter, one aspect of the present disclosure will be described mainly with reference to Figs. 1 to 7. It should be noted that all of the drawings used in the following description are schematic, and the dimensional relationship of each element, the ratio of each element, and the like shown in the drawings do not necessarily match the actual ones. Furthermore, the dimensional relationship of each element, the ratio of each element, and the like between multiple drawings do not necessarily match.

[0010] The substrate processing apparatus given as an example in the following description is used in the manufacturing process of semiconductor devices, and is configured to perform a predetermined process on a substrate to be processed. The substrate to be processed is, for example, a silicon wafer (hereinafter, simply referred to as a "wafer") as a semiconductor substrate on which a semiconductor device (semiconductor device) is fabricated. In this specification, the term "wafer" may mean "the wafer itself" or "a laminate (assembly) of a wafer and a predetermined layer or film formed on its surface" (i.e., the wafer includes the predetermined layer or film formed on the surface). In this specification, the term "surface of a wafer" may mean "the surface (exposed surface) of the wafer itself" or "the surface of a predetermined layer or film formed on the wafer, i.e., the outermost surface of the wafer as a laminate". In this specification, the term "substrate" is synonymous with the term "wafer". Predetermined process treatments (hereinafter, sometimes simply referred to as "treatments") performed on a wafer include, for example, an oxidation treatment, a diffusion treatment, an annealing treatment, an etching treatment, a pre-cleaning treatment, a chamber cleaning treatment, a film formation treatment, etc. In this embodiment, a case where a film formation treatment is performed will be particularly taken as an example.

[0011] In this specification, the processing temperature means the temperature of the substrate S or the temperature inside the processing chamber 201, and the processing pressure means the pressure inside the processing chamber 201. Moreover, the processing time means the time the processing continues. These terms also apply to the following explanations.

[0012] Hereinafter, the embodiments will be described with reference to the drawings. However, in the following description, the same components are given the same reference numerals and repeated description may be omitted. Note that, in order to clarify the description, the drawings may show the width, thickness, shape, etc. of each part in a schematic manner compared to the actual embodiment, but these are merely examples and do not limit the interpretation of the present disclosure.

[0013] (1) Configuration of the substrate processing device Fig. 1 is an explanatory diagram for explaining a substrate processing apparatus according to this embodiment. Each component will be specifically explained below by taking the substrate processing apparatus 100 in Fig. 1 as an example.

[0014] The substrate processing apparatus 100 includes a container 202. The container 202 is configured as a flat sealed container having a circular cross section, for example. The container 202 is made of a metal material, such as aluminum (Al) or stainless steel (SUS). A processing space 205 for processing the substrate S and a transfer space 206 through which the substrate S passes when being transferred to the processing space 205 are formed in the container 202. The container 202 is configured of an upper container 202a and a lower container 202b. A partition plate 208 is provided between the upper container 202a and the lower container 202b. The structure that configures the processing space 205 is called a processing chamber 201. In this embodiment, the processing chamber 201 is mainly configured of a dispersion plate 234 and a substrate mounting table 212, which will be described later.

[0015] A substrate loading / unloading port 148 adjacent to a gate valve 149 is provided on the side surface of the lower vessel 202b, and the substrate S is moved between the substrate loading / unloading port 148 and an adjacent transfer chamber (not shown). A plurality of lift pins 207 are provided on the bottom of the lower vessel 202b.

[0016] A substrate mounting part 210 on which a substrate S is placed is disposed in the processing space 205. The substrate mounting part 210 has a substrate mounting surface 211 on which the substrate S is placed, a substrate mounting table 212 having the substrate mounting surface 211 on its surface, and a heater 213 as a heat source provided in the substrate mounting table 212. The heater 213 is disposed below the substrate mounting surface 211.

[0017] An end face 214 is provided on the surface on which the substrate mounting surface 211 is provided and on the outer periphery of the substrate mounting surface 211. During substrate processing, the substrate S is placed on the substrate mounting surface 211 but not on the end face 214.

[0018] The substrate mounting table 212 is provided with through holes 215, through which the lift pins 207 pass, at positions corresponding to the lift pins 207. The substrate mounting table 212 is made of, for example, quartz.

[0019] A temperature measuring device 216 which is a first temperature measuring device that measures the temperature of the heater 213 is provided inside the substrate mounting table 212. The temperature measuring device 216 is connected via a wiring 220 to a temperature measuring unit 221 which is a first temperature measuring unit.

[0020] A wiring 222 for supplying power is connected to the heater 213. The temperature measuring device 216 is connected to a heater control unit 223.

[0021] The temperature measurement unit 221 and the heater control unit 223 are electrically connected to a controller 400, which will be described later. The controller 400 transmits control information to the heater control unit 223 based on temperature information measured by the temperature measurement unit 221. The heater control unit 223 controls the heater 213 by referring to the received control information.

[0022] The heat distribution on the surface of the substrate mounting table 212 is configured so that the temperature of the substrate mounting surface 211 is higher than that of the end face 214 and the side face 212a of the substrate mounting table 212. One of the reasons for this state is considered to be that heat is trapped in the substrate mounting surface 211 and escapes from the end face 214 and the side face 212a. Specifically, while heat is trapped on the substrate mounting surface 211 by the substrate S and the like, heat escapes from the end face 214 and the side face 212a on the sides of the substrate mounting table 212.

[0023] The substrate mounting table 212 is supported by a shaft 217. The shaft 217 passes through the bottom of the container 202, and is further connected to an elevator 218 outside the container 202.

[0024] The lifting unit 218 mainly includes a support shaft 218a that supports the shaft 217, and an operating unit 218b that raises and lowers and rotates the support shaft 218a. The operating unit 218b includes a lifting mechanism 218c including, for example, a motor for achieving the lifting and lowering, and a rotation mechanism 218d such as a gear for rotating the support shaft 218a.

[0025] The lifting unit 218 may be provided with an instruction unit 218e for instructing the operation unit 218b to lift, lower, or rotate as a part of the lifting unit 218. The instruction unit 218e is electrically connected to the controller 400. The instruction unit 218e controls the operation unit 218b based on an instruction from the controller 400.

[0026] By operating the lifting unit 218 to lift and lower the shaft 217 and the substrate mounting table 212, the substrate mounting table 212 can lift and lower the substrate S mounted on the mounting surface 211. The lower end of the shaft 217 is surrounded by a bellows 219, which keeps the inside of the processing space 205 airtight.

[0027] When transporting the substrate S, the substrate mounting table 212 is lowered to a substrate transport position where the substrate mounting surface 211 faces the substrate load / unload port 148, and when processing the substrate S, the substrate mounting table 212 is raised until the substrate S reaches a substrate processing position in the processing space 205 as shown in Fig. 1. The substrate processing position is also called the first position, and the substrate transport position is also called the second position.

[0028] When the substrate mounting table 212 is raised to the substrate processing position, a cleaning gas flow path 281 is formed between the side surface 212a of the substrate mounting table 212 and the side surface 208a of the partition plate 208. The cleaning gas flow path 281 will be described later.

[0029] A shower head (also referred to as SH) 230 serving as a gas dispersion mechanism is provided in an upper portion (upstream side) of the processing space 205. A through hole 231a is provided in a lid 231 of the shower head 230. The through hole 231a communicates with a common gas supply pipe 242 described later. A buffer space 232 is defined within the shower head 230.

[0030] A shower head exhaust pipe 251 is connected to the shower head 230 so as to communicate with the buffer space 232. Furthermore, the shower head 230 is provided with a shower head heater 235. In this embodiment, the heater 213 may be called a first heater, and the shower head heater 235 may be called a second heater.

[0031] A flow straightening plate 265 is provided in the buffer space 232. The flow straightening plate 265 has a conical shape whose diameter increases from the gas inlet 241 toward the radial direction of the substrate S. The lower end of the edge of the flow straightening plate 265 is configured to be located on the outer periphery of the substrate S relative to the end of the substrate S. The flow straightening plate 265 is configured to efficiently move the supplied gas in the direction of the dispersion plate 234.

[0032] The upper vessel 202a has a flange, and a support block 233 is placed on and fixed to the flange. The support block 233 has a flange 233a, and a dispersion plate 234 is placed on and fixed to the flange 233a. Furthermore, the lid 231 is fixed to the upper surface of the support block 233.

[0033] Next, the gas supply system will be described with reference to FIG. To the common gas supply pipe 242, a first gas supply pipe 243a, a second gas supply pipe 244a, a third gas supply pipe 245a, and a fourth gas supply pipe 248a are connected.

[0034] The first gas supply pipe 243a is provided with, in this order from the upstream direction, a first gas source 243b, a mass flow controller (MFC) 243c which is a flow rate controller (flow rate control section), and a valve 243d which is an opening / closing valve.

[0035] The first gas source 243b is a source of a first gas (also called a "first element-containing gas") containing a first element. The first element-containing gas is a raw material gas, that is, one of the processing gases. Here, the first element is, for example, silicon (Si). That is, the first element-containing gas is, for example, a silicon-containing gas. Specifically, dichlorosilane (SiH2Cl2, dichlorosilane: DCS) gas or tetraethoxysilane (Si(OC2H5)4, Tetraethoxysilane: TEOS) gas or the like is used. In the following description, an example using DCS gas will be described.

[0036] The first gas supply pipe 243a, the MFC 243c, and the valve 243d mainly constitute a first gas supply system 243 (also referred to as a silicon-containing gas supply system). The first gas supply system may include a first gas source 243b.

[0037] The second gas supply pipe 244a is provided with a second gas source 244b, an MFC 244c, and a valve 244d in this order from the upstream direction.

[0038] The second gas source 244b is a source of a second gas containing a second element (hereinafter also referred to as a "second element-containing gas"). The second element-containing gas is one of the process gases. The second element-containing gas may be considered as a reaction gas or a modifying gas.

[0039] Here, the second element-containing gas contains a second element different from the first element. The second element is, for example, any one of oxygen (O), nitrogen (N), and carbon (C). In this embodiment, the second element-containing gas is, for example, a nitrogen-containing gas, and an example of using ammonia (NH3) gas will be described.

[0040] When the substrate S is processed with the second gas in a plasma state, a remote plasma unit 244e serving as a plasma generating section may be provided on the second gas supply pipe.

[0041] A second gas supply system 244 (also referred to as a reactive gas supply system) is mainly constituted by the second gas supply pipe 244a, the MFC 244c, and the valve 244d. The second gas supply system 244 may include a plasma generating unit. Furthermore, the second gas supply system may include a second gas source 244b.

[0042] The third gas supply pipe 245a is provided with a third gas source 245b, an MFC 245c, and a valve 245d in this order from the upstream direction.

[0043] The third gas source 245b is an inert gas source, such as nitrogen (N2) gas.

[0044] The third gas supply pipe 245a, the MFC 245c, and the valve 245d mainly constitute a third gas supply system 245. The third gas supply system may include a third gas source 245b.

[0045] In the substrate processing step, the inert gas supplied from the inert gas source 245b acts as a purge gas for purging gas remaining in the container 202 and the shower head 230. In the cleaning step, the inert gas is used as a carrier gas or dilution gas for the cleaning gas, as necessary. In this case, the inert gas is supplied into the shower head 230 via the MFC 245c, the valve 245d, and the common gas supply pipe 242.

[0046] The fourth gas supply pipe 248a is provided with a fourth gas source 248b, an MFC 248c, and a valve 248d in this order from the upstream direction. When the cleaning gas is turned into a plasma state, a remote plasma unit 248e may be provided.

[0047] When supplying the cleaning gas, if an inert gas is supplied from the third gas supply system 245, it is desirable to provide the remote plasma unit 248e downstream of the joining point of the third gas supply pipe 245a and the fourth gas supply pipe 248a. In this way, the inert gas collides with the cleaning gas in a plasma state, and deactivation of the cleaning gas can be suppressed.

[0048] The fourth gas source 248b is a cleaning gas source. The cleaning gas is, for example, NF3 or F2 gas. The cleaning gas (fourth gas) supplied from the fourth gas source 248b acts as a cleaning gas for removing by-products and the like attached to the shower head 230 and the processing vessel 202 in the cleaning process. Specifically, for example, nitrogen trifluoride (NF3) gas may be used as the cleaning gas. For example, hydrogen fluoride (HF) gas, chlorine trifluoride (ClF3) gas, fluorine (F2) gas, etc. may also be used, or a combination of these may also be used. Note that the cleaning gas may be called an F-containing gas because it contains an F component. One or more of these may be used as the cleaning gas.

[0049] The fourth gas supply pipe 248a, the MFC 248c, and the valve 248d mainly constitute a fourth gas supply system 248. The fourth gas supply system 248 may include a remote plasma unit 248e. Furthermore, the fourth gas supply system may include a fourth gas source 248b.

[0050] The cleaning gas supplied from the fourth gas source 248b is supplied when cleaning the inside of the processing chamber 201 and the shower head 230.

[0051] 2 illustrates an example of a configuration in which the first gas supply system 243, the second gas supply system 244, the third gas supply system 245, and the fourth gas supply system 248 are connected to the processing chamber 201 via the common gas supply pipe (first supply pipe) 242, but the present invention is not necessarily limited to this. For example, the gas supply pipes in the first gas supply system 243, the second gas supply system 244, the third gas supply system 245, and the fourth gas supply system 248 may be directly connected to the shower head 230 or the like.

[0052] Each of the first gas supply system 243, the second gas supply system 244, and the third gas supply system 245, or a combination of these, may be called a "processing gas supply system." In this case, the processing gas supply system functions to supply a processing gas or a purge gas to the shower head 230, the processing chamber 201, etc.

[0053] The lower vessel 202b is configured to communicate with a fifth gas supply pipe 271. As shown in Fig. 3, the fifth gas supply pipe 271 is provided with, in this order from the upstream direction, a fifth gas source 272, an MFC 273, and a valve 274. The fifth gas supply system 270 may include a remote plasma unit 275.

[0054] The fifth gas source 272 is a second cleaning gas source. The second cleaning gas source 272 stores a second cleaning gas different from the first cleaning gas. In this embodiment, a cleaning auxiliary gas is stored as the second cleaning gas. The cleaning auxiliary gas is a gas having a property of assisting the activation of the first cleaning gas. Specifically, for example, an oxygen-containing gas such as NO gas, O2 gas, H2O gas, and alcohol can be used as the cleaning auxiliary gas. One or more of these can be used.

[0055] A fifth gas supply system 270 is mainly configured by the fifth gas supply pipe 271, the MFC 273, and the valve 274. The fifth gas supply system 270 may include a fifth gas source 272. Furthermore, the fifth gas supply system 270 may include a remote plasma unit 275.

[0056] The fourth gas supply system 248 is also called a first cleaning gas supply system. The fifth gas supply system 270 is also called a second cleaning gas supply system. In addition, the gas supplied from the first cleaning gas supply system is also called a first cleaning gas, and the gas supplied from the second cleaning gas supply system is also called a second cleaning gas. Furthermore, the first cleaning gas supply system and the second cleaning gas supply system are collectively called a cleaning gas supply system.

[0057] An exhaust pipe 262 communicates with the processing space 205 via an exhaust buffer structure 261. The exhaust buffer structure 261 is provided in a circular shape so as to surround the outer periphery of the substrate S. In this embodiment, it is disposed between the partition plate 208 and the upper vessel 202a. The lower surface side of the exhaust buffer structure 261 is configured to be at the same height as the substrate placement surface 211 in the substrate processing position. Therefore, the cleaning gas flow path 281 is disposed below the lower surface of the exhaust buffer structure 261.

[0058] The exhaust pipe 262 is connected to the upper vessel 202a on the upper side of the exhaust buffer structure 261 so as to communicate with the processing space 205 via the exhaust buffer structure 261. An APC (Auto Pressure Controller) 266, which is a pressure controller that controls the inside of the processing space 205 to a predetermined pressure, is provided in the exhaust pipe 262. The APC 266 has a valve body (not shown) whose opening degree can be adjusted, and adjusts the conductance of the exhaust pipe 262 in response to an instruction from the controller 400.

[0059] A valve 267 is provided on the exhaust pipe 262 upstream of the APC 266. The exhaust pipe 262, the valve 267, and the APC 266 are collectively referred to as a processing chamber exhaust system. Furthermore, a DP (Dry Pump) 269 is provided downstream of the exhaust pipe 262. The DP 269 exhausts the atmosphere in the processing space 205 via the exhaust pipe 262. The DP 269 may be included in the processing chamber exhaust system.

[0060] The exhaust pipe 251 is connected to the shower head 230 so as to communicate with the buffer space 232. For example, the exhaust pipe 251 is connected to the ceiling 231. The exhaust pipe 251 is provided with an APC (Auto Pressure Controller) 253, which is a pressure controller that controls the buffer space 232 to a predetermined pressure. The APC 253 has a valve body (not shown) whose opening degree can be adjusted, and adjusts the conductance of the exhaust pipe 251 in response to an instruction from a controller 400.

[0061] A valve 252 is provided in the exhaust pipe 251 upstream of the APC 253. The exhaust pipe 251, the valve 252, and the APC 253 are collectively referred to as a shower head exhaust system. Furthermore, a DP (Dry Pump) 254 is provided downstream of the shower head exhaust pipe 251. The DP 254 exhausts the atmosphere in the buffer space 232 via the exhaust pipe 251. The DP 254 may be included in the shower head exhaust system. Furthermore, the process chamber exhaust system and the shower head exhaust system may be collectively referred to as an exhaust system.

[0062] The substrate processing apparatus 100 includes a controller 400 that controls the operations of each part of the substrate processing apparatus 100 .

[0063] 4 shows an outline of the controller 400. The controller 400, which is a control unit, is configured as a computer including a CPU (Central Processing Unit) 401, a RAM (Random Access Memory) 402, a storage unit 403 as a storage device, and an I / O port 404. The RAM 402, the storage unit 403, and the I / O port 404 are configured to be able to exchange data with the CPU 401 via an internal bus 405. Data transmission and reception within the substrate processing apparatus 100 is performed according to instructions from a transmission / reception instruction unit 406, which is also one of the functions of the CPU 401.

[0064] There is provided a network transmission / reception unit 293 connected via a network to a higher-level device 294. The network transmission / reception unit 293 is capable of receiving information regarding the processing history and processing schedule of the substrates S in a lot.

[0065] The storage unit 403 is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc. A process recipe 409 in which procedures and conditions for substrate processing are described, and a control program 410 for controlling the operation of the substrate processing apparatus are readably stored in the storage unit 403.

[0066] The process recipe is a combination of procedures in a substrate processing step, which will be described later, that are executed by the controller 400 to obtain a predetermined result, and functions as a program. Hereinafter, the process recipe and the control program are collectively referred to as simply a program. In this specification, the term program may include only a process recipe, only a control program, or both. The RAM 402 is configured as a memory area (work area) in which programs and data read by the CPU 401 are temporarily stored.

[0067] The I / O port 404 is connected to each component of the substrate processing apparatus 100, such as the gate valve 149, the lift mechanism 218, each pressure regulator, each pump, the heater control unit 223, and the like.

[0068] The CPU 401 is configured to read and execute a control program from the storage unit 403, and also to read a process recipe from the storage unit 403 in response to an input of an operation command from the input / output device 291. The CPU 401 is configured to be capable of controlling the opening and closing operation of the gate valve 149, the lifting and lowering operation of the lifting mechanism 218, the temperature measurement unit 221, the heater control unit 223, on / off control of each pump, the flow rate adjustment operation of the MFC, valves, etc., in accordance with the contents of the read process recipe.

[0069] The controller 400 according to the present technology can be configured by installing the program in the computer using an external storage device (for example, a magnetic disk such as a hard disk, an optical disk such as a DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory) 292 storing the above-mentioned program. The configuration for supplying the program to the computer is not limited to the case where the program is supplied via the external storage device 292. For example, the program may be supplied not via the external storage device 292 by using the Internet or a dedicated line. The storage unit 403 and the external storage device 292 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as recording media. In this specification, when the term recording medium is used, it may include only the storage unit 403 alone, only the external storage device 292 alone, or both.

[0070] (2) Substrate processing Next, as one step of the semiconductor manufacturing process, a substrate processing step in which the substrate S is processed using the substrate processing apparatus 100 having the above-mentioned configuration will be described. Here, as an example of the substrate processing step, a case where a thin film is formed on a substrate S will be taken as an example. In particular, in this embodiment, an example will be described in which DCS gas is used as a source gas (first gas), NH3 gas is used as a reactive gas (second process gas), and these gases are alternately supplied to form a SiN (silicon nitride) film as a silicon-containing film on the substrate S. In the following description, the operation of each component of the substrate processing apparatus 100 is controlled by a controller 400.

[0071] Fig. 5 is a flow diagram showing a procedure of a substrate processing step according to this embodiment. Fig. 6 is a flow diagram showing details of the film forming step in Fig. 5. Fig. 7 is a flow diagram showing details of the cleaning step in Fig. 5.

[0072] (Substrate loading process: S102) In the substrate processing apparatus 100, a substrate loading step S102 is first performed in the substrate processing step. In the substrate loading step S102, the substrate S is loaded into the processing vessel 202 with the substrate placement table 212 at the substrate transfer position (dotted line in FIG. 1). After the substrate S is loaded into the processing vessel 202, the vacuum transfer robot (not shown) is retreated to the outside of the processing vessel 202, and the gate valve 205 is closed to seal the processing vessel 202. Thereafter, the substrate placement table 212 is raised to place the substrate S on the substrate placement surface 211 provided on the substrate placement table 212. Furthermore, the substrate placement table 212 is raised to the substrate processing position, so that the substrate S is raised to the processing position in the processing chamber 201.

[0073] After the substrate S is loaded into the transfer space 203, when the substrate S rises to the substrate processing position in the processing chamber 201, the APC valve 266 is operated to communicate between the exhaust buffer chamber 261, the APC valve 266, and the vacuum pump 269. The APC valve 266 adjusts the conductance of the exhaust pipe 262 to control the exhaust flow rate of the exhaust buffer chamber 261 by the vacuum pump 269, and maintains the processing chamber 201, which is in communication with the exhaust buffer chamber 261, at a predetermined pressure.

[0074] Furthermore, when the substrate S is placed on the substrate placement table 212, power is supplied to a heater 213 embedded inside the substrate placement table 212, and the temperature of the surface of the substrate S is controlled to a predetermined processing temperature. At this time, the temperature of the heater 213 is adjusted by controlling the power supply to the heater 213 based on temperature information detected by a temperature measuring device 216.

[0075] In this manner, in the substrate loading step S102, the inside of the processing chamber 201 is controlled to have a predetermined processing pressure, and the surface temperature of the substrate S is controlled to have a predetermined processing temperature. Here, the predetermined processing temperature and processing pressure are processing temperature and processing pressure that allow a SiN film to be formed by cyclic processing in the film forming step S104 described later. That is, the processing temperature and processing pressure are such that the source gas supplied in the first processing gas (source gas) supply step S202 does not self-decompose. Specifically, the processing temperature is considered to be from room temperature to 500° C., preferably from room temperature to 400° C., and the processing pressure is considered to be 50 to 5000 Pa. These processing temperature and processing pressure are also maintained in the film forming step S104 described later.

[0076] (Film forming process: S104) After the substrate loading S102, the film forming step S104 is performed. The film forming step S104 will be described in detail below with reference to Fig. 6. The film forming step S104 is a cyclic process in which a step of alternately supplying different process gases is repeated.

[0077] (First process gas supply step: S202) In the film forming step S104, first, a first process gas (source gas) supply step S202 is performed in the presence of the substrate S. In the first process gas supply step S202, DCS gas is supplied as a source gas (first gas) from the source gas supply system 243 into the process chamber 201. The DCS gas supplied into the process chamber 201 reaches the surface of the substrate S at the substrate processing position. As a result, a silicon-containing layer is formed as a "first element-containing layer" on the surface of the substrate S by contacting the DCS gas. The silicon-containing layer is formed to a predetermined thickness and a predetermined distribution depending on, for example, the pressure in the process container 202, the flow rate of the DCS gas, the temperature of the substrate mounting table 212, the time required to pass through the process chamber 201, and the like.

[0078] After a predetermined time has elapsed since the supply of DCS gas started, the valve 243d is closed to stop the supply of DCS gas. In the first process gas supply process S202, the pressure in the process chamber 201 is controlled to a predetermined pressure by the APC valve 266.

[0079] (Purge process: S204) After the first process gas supply process S202, N2 gas is then supplied from the purge gas supply system 245 to purge the atmosphere in the process chamber 201 and the shower head 230. As a result, the DCS gas that could not be bonded to the substrate S in the first process gas supply process S202 is removed from the process chamber 201 by the vacuum pump 269.

[0080] (Second process gas supply step: S206) After the purge process S204, next, NH3 gas is supplied as a reactive gas (second gas) from the reactive gas supply system 244 into the processing chamber 201. The NH3 gas may be made into a plasma state by the RPU 244e and irradiated onto the surface of the substrate S at the substrate processing position. As a result, the silicon-containing layer already formed on the surface of the substrate S is modified, and for example, a SiN film that is a layer containing Si and N elements is formed.

[0081] After a predetermined time has elapsed, the valve 244d is closed to stop the supply of the NH3 gas. In the second process gas supply process S206, the pressure in the process chamber 201 is controlled to a predetermined pressure by the APC valve 266, similar to the first process gas supply process S202.

[0082] (Purge process: S208) After the second process gas supply process S206, a purge process S208 is performed. The operations of the various parts in the purge process S208 are similar to those in the above-mentioned purge process S204, and therefore the description thereof will be omitted here.

[0083] (Judgment process: S210) After the purge process S208 is completed, the controller 400 determines whether the above-described series of processes (S202 to S208) has been performed a predetermined number of times (n cycles) as one cycle. If the cycle has not been performed the predetermined number of times, the controller 400 repeats one cycle from the first process gas supply process S202 to the purge process S208. On the other hand, if the cycle has been performed the predetermined number of times, the film formation process S104 is terminated.

[0084] In this manner, in the film forming process S104, the steps from the first process gas supply process S202 to the purging process S208 are sequentially performed to deposit a SiN film of a predetermined thickness on the surface of the substrate S. Each of these steps constitutes one cycle, and the cycle is repeated a predetermined number of times to control the SiN film formed on the surface of the substrate S to a desired thickness.

[0085] (Substrate unloading process: S106) After the above-described film formation step S104 is completed, the substrate processing apparatus 100 performs a substrate unloading step S106 as shown in Fig. 2. In the substrate unloading step S106, the processed substrate S is unloaded from the processing vessel 202 in the reverse order of the above-described substrate loading step S102. Then, in the same order as the substrate loading step S102, the next unprocessed substrate S waiting is loaded into the processing vessel 202. Thereafter, the film formation step S104 is performed on the loaded substrate S.

[0086] (Judgment process: S108) After completing the substrate unloading step S106, the substrate processing apparatus 100 determines whether the above-mentioned series of processes (S102 to S106) constitutes one cycle, and judges whether the cycle has been performed a predetermined number of times, i.e., whether the number of substrates S processed in the film forming step S104 has reached a predetermined number. If the cycle has not been performed the predetermined number of times, the number of processed substrates S has not reached the predetermined number, and the cycle from the substrate loading step S102 to the substrate unloading step S106 is repeated. On the other hand, if the cycle has been performed the predetermined number of times, the substrate processing process is terminated.

[0087] When the substrate processing process is completed, the processing vessel 202 is left in a state where the substrate S is not present therein.

[0088] Incidentally, the processing gas is supplied onto the substrate S and exhausted through the exhaust buffer, but during the exhaust, the gas may wrap around the side surface 212a. As a result, the gas may adhere to the side surface 212a and become a by-product.

[0089] Meanwhile, the temperature on the substrate mounting surface 211 is adjusted to a level that allows a controlled, dense film to be formed on the substrate S. On the other hand, the temperature is not controlled on the side surface 212a or the end surface 214 because it is not necessary to form a dense film there. As a result, stress variations occur in the uncontrolled film attached to the side surface 212a. This may cause the film attached to the side surface 212a to peel off and become particles.

[0090] Therefore, after a predetermined number of substrates have been processed, the cleaning step S110 is performed. Note that, although the description has been given here of after a predetermined number of substrates have been processed, this is not limiting, and the cleaning step S110 may be performed after a predetermined cumulative processing time.

[0091] (Cleaning process S110) Next, as one step in the substrate processing method or semiconductor device manufacturing method, a cleaning step S110 for cleaning the interior of the processing vessel 202 of the substrate processing apparatus 100 will be described in detail.

[0092] When the above-mentioned substrate processing steps are repeatedly performed, unwanted reactants such as by-products may adhere to the wall surface, end surface 214, and side surface 212a of the processing vessel 202 (particularly, in the processing chamber 201). Therefore, the substrate processing apparatus 100 performs a cleaning process of the processing chamber 201 at a predetermined timing (for example, after performing a predetermined number of substrate processing steps, after processing a predetermined number of substrates S, after a predetermined time has elapsed since the previous cleaning process, etc.).

[0093] In the cleaning process S110, a cleaning gas and a cleaning auxiliary gas are supplied with no substrate S on the substrate mounting table 212 to remove deposits (reaction by-products, etc.) adhering to at least one of the inside of the buffer space 232, the processing chamber 201, the end face 214 of the substrate mounting table 212, and the side face 212a. At this time, the cleaning process is performed with no substrate in the processing chamber 201 and no processing gas present.

[0094] The cleaning process is carried out under the following conditions, for example. Temperature inside the treatment chamber: 200℃~600℃, Pressure inside the processing chamber: 133 Pa (1 Torr) to 66500 Pa (500 Torr), NF3 gas supply flow rate: 200sccm (0.2slm) to 4000sccm (4slm), NO gas supply flow rate: 200sccm (0.2slm) to 4000sccm (4slm), N2 gas supply flow rate: 500sccm (0.5slm) to 20000sccm (20sl m)

[0095] In this specification, the expression of a numerical range such as "1 to 2000 Pa" means that the lower limit and the upper limit are included in the range. Therefore, for example, "1 to 2000 Pa" means "1 Pa or more and 2000 Pa or less." The same applies to other numerical ranges.

[0096] When dilution of the cleaning gas or a carrier gas is required, the valve 245d is opened to supply an inert gas.

[0097] Next, a comparative example of the present technology will be described. As a comparative example, it is possible to supply only a cleaning gas to the processing chamber 201 without supplying a cleaning assist gas. For example, a first cleaning gas supplied from a fourth gas supply system is supplied to the processing chamber 201 via the buffer space 232. The cleaning gas supplied to the processing chamber 201 cleans the walls and the like constituting the processing chamber 201, and is then exhausted from the exhaust pipe 262 via the exhaust buffer structure 261.

[0098] As a result of intensive research by the present inventor, it was found that in the method of the comparative example, there are some areas on the downstream side of the cleaning gas flow that are insufficiently cleaned. The insufficiently cleaned areas are, for example, the end surface 214 and the side surface 212a. Next, the reason for insufficient cleaning will be explained. The cleaning gas reaches the end surface 214 and the side surface 212a via the buffer space 232 and the processing chamber 201. The cleaning gas is deactivated before reaching the end surface 214 and the side surface 212a because the cleaning gas is subjected to cleaning processing in the buffer space 232 and the processing chamber 201. Therefore, the energy of the cleaning gas is insufficient at the end surface 214 and the side surface 212a.

[0099] In particular, since the cleaning gas is exhausted through the exhaust buffer structure 261, although some of the cleaning gas reaches the side surface 212a, most of the cleaning gas flows toward the exhaust buffer 261. That is, the amount of cleaning gas at the side surface 212a may be insufficient.

[0100] In response to such concerns, the present disclosure will describe a method for thoroughly cleaning the end surface 214 and the side surface 212a. The specific contents will be described below.

[0101] (First position movement step S302) Next, the first position movement step S302 will be described. With no substrate on the substrate mounting table 212, the substrate mounting table 212 is moved to the first position. In this manner, a cleaning gas flow path 281 is formed between the side surface 212a and the side surface 208a. At this time, the heater 213 is set to a temperature of the side surface 212a, i.e., a temperature of the cleaning gas flow path at which the cleaning gas and the cleaning assist gas react with each other to perform cleaning processing. Due to the configuration of the substrate mounting table 212, the temperature of the cleaning gas flow path is lower than the temperature of the processing chamber 201, as described above.

[0102] (First cleaning process S304) Next, the first cleaning process S304 will be described. After the substrate mounting table 212 is moved to the first position, a cleaning gas is supplied from the first cleaning gas supply system 248 with the heater 213 operating. Furthermore, the valve 267 is opened and the valve 252 is closed. Since the heater 213 is operating, the temperature of the cleaning gas flow path becomes lower than the temperature of the process chamber 201.

[0103] The cleaning gas is supplied to the processing chamber 201 via the shower head 230. Although the valve 267 is opened and the valve 252 is closed in the above description, it is sufficient that the cleaning gas and the cleaning assist gas can be exhausted from the exhaust buffer structure 261, and for example, the opening degree of the valve may be adjusted so that the exhaust amount of the processing chamber exhaust system is greater than the exhaust amount of the shower head exhaust system.

[0104] More preferably, the cleaning auxiliary gas is controlled so as not to hinder the diffusion of the cleaning gas into the processing chamber 201 and the cleaning gas flow path 281. For example, the valve 248d is opened to supply the cleaning gas into the processing chamber 201 and the cleaning gas flow path, and the valve 274 is closed to prevent the cleaning auxiliary gas from being supplied into the processing chamber 201 and the cleaning gas flow path 281.

[0105] In this way, it is possible to prevent the cleaning assist gas from hindering the diffusion of the cleaning gas. Therefore, the cleaning gas can be diffused into the processing chamber 201, and the cleaning gas can be supplied to the processing chamber 201, the end face 214, and the side face 212a. If the cleaning assist gas is supplied to the processing chamber 201 or the cleaning gas flow passage 281 before the cleaning gas, the cleaning gas may not be sufficiently diffused to the end face 214 or the side face 212a, resulting in an insufficient cleaning process.

[0106] (Second cleaning process S306) The second cleaning step S306 will now be described. When a predetermined time has elapsed since the start of the supply of the cleaning gas, a cleaning auxiliary gas is supplied from the second cleaning gas supply system 270. At this time, following the first cleaning process S304, the supply of the cleaning gas and the exhaust from the processing chamber exhaust system are performed. Furthermore, the operation of the heater 213 is maintained. Therefore, the temperature of the cleaning gas flow path is maintained lower than the temperature of the processing chamber 201.

[0107] The cleaning auxiliary gas is supplied to the cleaning gas flow passage 281 through the transfer space 206. At this time, the cleaning gas and the cleaning auxiliary gas join in the cleaning gas flow passage 281 and react with each other, thereby activating the cleaning gas. This makes it possible to clean the side surface 212a. The joining cleaning gas and cleaning auxiliary gas are exhausted from the exhaust buffer 261.

[0108] In addition, the predetermined time in this process refers to a time during which the cleaning gas and the cleaning assist gas can join in the cleaning gas flow path 281. For example, it refers to at least the time during which the cleaning gas reaches the cleaning gas flow path 281. By delaying the supply of the cleaning assist gas for a predetermined time, the cleaning gas and the cleaning assist gas are made to join in the cleaning gas flow path 281.

[0109] At this time, the process chamber exhaust system, the first cleaning gas supply system, and the second cleaning gas supply system are controlled in cooperation with each other so that the cleaning gas and the cleaning auxiliary gas can join in the cleaning gas passage 281 .

[0110] In the cleaning gas flow passage 281, the deactivated cleaning gas is activated by the cleaning assist gas to clean the side surface 212a.

[0111] If the cleaning auxiliary gas is supplied before the predetermined time has elapsed, the cleaning gas flow path 281 will be filled with the cleaning auxiliary gas. This will result in a high pressure in the cleaning gas flow path 281, creating an environment in which the cleaning gas is difficult to supply to the cleaning gas flow path 281, and there is a risk that the cleaning of the side surface 212a will be insufficient. In contrast, by supplying the cleaning auxiliary gas after the predetermined time has elapsed as described above, the cleaning gas can be supplied to the cleaning gas flow path, and therefore the side surface 212a can be sufficiently cleaned.

[0112] (Third cleaning process: S308) Next, the third step S308 will be described. In this case, after a predetermined time has elapsed since the start of the supply of the cleaning gas in the second step S306, the cleaning assist gas is supplied from the second cleaning gas supply system while the supply of the cleaning gas from the first cleaning gas supply system is maintained. Furthermore, the valve 267 is closed, the valve 252 is opened, and the heater 213 is maintained in operation. The temperature of the cleaning gas flow path is maintained lower than the temperature of the process chamber 201.

[0113] In this manner, the cleaning auxiliary gas is exhausted from the shower head exhaust system via the transfer chamber 206, the cleaning gas flow path 281, and the end surface 214. On the end surface 214, the deactivated cleaning gas and the cleaning auxiliary gas join together and react with each other, and the deactivated cleaning gas is activated by the cleaning auxiliary gas to clean the end surface 214.

[0114] In this step, after the cleaning gas and the cleaning assist gas join on the end surface 214, the supply amount of the cleaning gas may be made smaller than that in the second cleaning step. For example, the supply of the cleaning gas may be stopped. In this case, the cleaning gas remaining on the end surface 214 reacts with the cleaning assist gas to clean the end surface 214. In contrast, the cleaning gas is not replenished with new cleaning gas on the substrate mounting surface 211 or the dispersion plate 234, so that the cleaning gas and the cleaning assist gas can be prevented from joining together. If the cleaning gas and the cleaning assist gas join together at the substrate mounting surface 211, the dispersion holes of the dispersion plate 234, the dispersion plate 270, or the like, the cleaning gas is more activated, and there is a risk that the substrate mounting surface 211, the dispersion plate 234, or the dispersion plate 270 will be etched.

[0115] In particular, since the substrate is placed on the substrate mounting surface 211 in the film forming step S104, there are few objects to be cleaned on the substrate mounting surface 211, and therefore the substrate mounting surface 211 is easily etched when it comes into contact with a high-energy cleaning gas.

[0116] In particular, when the substrate mounting table 210 is made of a heat-transmitting material such as quartz, etching the substrate mounting surface 211 may cause the heat from the heater 213 to be diffusely reflected, which may lead to uneven heating of the substrate S. In the case of the present technology, etching can be suppressed, so that uneven heating can be prevented even when the substrate mounting table 210 is made of a heat-transmitting material.

[0117] Furthermore, an inert gas may be supplied from the third gas supply system. In this way, residual cleaning gas can be purged from the substrate placement surface 211, the dispersion holes in the dispersion plate 234, and the vicinity of the dispersion plate 27. Therefore, etching can be further suppressed.

[0118] In this embodiment, the valve 252 is opened and the valve 267 is closed. However, it is sufficient if the cleaning gas and the cleaning assist gas that have contributed to cleaning the end surface 214 can be exhausted from the shower head exhaust system. For example, the opening degree of the valves may be adjusted so that the exhaust volume of the shower head exhaust system is greater than the exhaust volume of the processing chamber exhaust system.

[0119] (Purge process S310) After the third cleaning process S308 is completed, the valve 252 is opened and an inert gas is supplied from the third gas supply system to remove the cleaning gas and the cleaning auxiliary gas from the processing chamber 201 and the buffer space 232. At this time, the valve 267 may be opened.

[0120] In the above embodiment, the combination of the first cleaning step S304 to the third cleaning step S308 is performed once, but the present invention is not limited to this, and the combination of the first cleaning step S304 to the third cleaning step S308 may be performed two or more times. In this way, the cleaning process is performed with fresh cleaning gas and cleaning assist gas, which enables more precise cleaning.

[0121] In addition, when the first cleaning step S304 to the second cleaning step S308 are repeated one or more times, it is desirable to perform the purging step S310. This allows fresh cleaning gas and cleaning auxiliary gas to be used at all times, enabling more precise cleaning. <Other embodiments>

[0122] Although the embodiments of the present disclosure have been specifically described above, the present disclosure is not limited to the above-described embodiments, and various modifications are possible without departing from the spirit of the present disclosure.

[0123] For example, in the above embodiment, the cleaning gas is supplied from the first cleaning gas supply system 248, and the cleaning auxiliary gas is supplied from the second cleaning gas supply system 270, but the present invention is not limited to this. As long as the cleaning gas and the cleaning auxiliary gas join in the cleaning gas passage 218, for example, the cleaning auxiliary gas may be supplied from the first cleaning gas supply system 248, and the cleaning gas may be supplied from the second cleaning gas supply system 270.

[0124] In the above embodiment, the substrate processing step uses DCS gas as a source gas (first gas) and NH3 gas as a reactive gas (second chemical gas) to alternately supply these gases to form a SiN film on a wafer, but the present disclosure is not limited to this. That is, the processing gas used in the film formation process is not limited to DCS gas, NH3 gas, etc., and other types of gases may be used to form other types of thin films. Furthermore, the present disclosure can be applied even when three or more types of processing gases are used.

[0125] In the above embodiment, when forming a SiN film, which is a nitride film, on a wafer, an example is given in which NF3 gas, F2 gas, etc. are used as a cleaning gas and NO gas, O2 gas, etc. are used as a cleaning auxiliary gas, but the present disclosure is not limited to this. For example, when forming an oxide film (e.g., a SiO film) on a wafer, hydrogen fluoride (HF) may be used as a cleaning gas and water (H2O) or alcohol may be used as a cleaning auxiliary gas.

[0126] The above-mentioned aspects and modifications may be used in appropriate combination. The processing procedures and processing conditions in such a case may be the same as those of the above-mentioned aspects and modifications. [Explanation of symbols]

[0127] S...Substrate 201: processing chamber, 211: substrate mounting surface, 212: substrate mounting table, 248: first cleaning gas supply system, 270: second cleaning gas supply system, 400: controller

Claims

1. a processing chamber capable of processing a substrate; a transfer chamber provided below the processing chamber and capable of transferring the substrate; a substrate mounting table having a substrate mounting surface on which the substrate is mounted; a processing gas supply system capable of supplying a processing gas into the processing chamber; a cleaning gas supply system including a first cleaning gas supply system capable of supplying a cleaning gas or a cleaning assist gas that reacts with the cleaning gas into the processing chamber, and a second cleaning gas supply system capable of supplying a gas different from the gas supplied from the first cleaning gas supply system and capable of supplying the different gas to the processing chamber via the transfer chamber; supplying a processing gas into the processing chamber while the substrate is placed on the substrate placement surface; When the substrate is not present on the substrate mounting surface, the cleaning gas and the cleaning auxiliary gas are supplied to a side surface of the substrate mounting table. a control unit configured to be able to control the processing gas supply system and the cleaning gas supply system; A substrate processing apparatus comprising:

2. The substrate processing apparatus of claim 1 , wherein the different gas is the cleaning auxiliary gas.

3. 2 . The substrate processing apparatus according to claim 1 , wherein the cleaning auxiliary gas has a property capable of reacting with the cleaning gas to clean the side surface of the substrate placement table.

4. 2 . The substrate processing apparatus according to claim 1 , wherein the control unit is configured to be capable of controlling the cleaning gas supply system so as to start the supply of the cleaning auxiliary gas after a predetermined time has elapsed since the start of the supply of the cleaning gas.

5. The substrate processing apparatus according to claim 1 , wherein the control unit is configured to be capable of controlling the cleaning gas supply system so as to start the supply of the cleaning assist gas while maintaining the supply of the cleaning gas.

6. 2 . The substrate processing apparatus according to claim 1 , wherein the control unit is configured to be capable of controlling the cleaning gas supply system so as to stop supplying the cleaning auxiliary gas to the processing chamber and to start supplying the cleaning gas.

7. The substrate processing apparatus according to claim 1 , wherein the control unit is configured to be capable of controlling the cleaning gas supply system so as to repeat the supply of the cleaning gas and the supply of the cleaning assist gas at least once or more.

8. 8. The substrate processing apparatus according to claim 7, wherein the control unit is configured to be capable of controlling the processing gas supply system so as to purge an atmosphere in the processing chamber after the supply of the cleaning gas and the supply of the cleaning assist gas.

9. Further, a shower head is provided upstream of the processing chamber, 2 . The substrate processing apparatus according to claim 1 , wherein the control unit is configured to be capable of controlling the processing gas supply system to supply an inert gas to the shower head while the cleaning assist gas is being supplied from the cleaning gas supply system.

10. A substrate mounting table having a substrate mounting surface on which a substrate is placed and an end surface provided on a surface on which the substrate mounting surface is provided; a process gas supply system capable of supplying a process gas to the substrate mounting table; a cleaning gas supply system capable of supplying a cleaning gas and a cleaning auxiliary gas that reacts with the cleaning gas to the substrate mounting table; supplying a process gas to the substrate mounting table when the substrate is present on the substrate mounting surface; When the substrate is not present on the substrate mounting surface, the cleaning gas and the cleaning auxiliary gas are supplied so as to mix the cleaning gas and the cleaning auxiliary gas on the side of the substrate mounting table or to react with each other on the end surface. a control unit configured to be able to control the processing gas supply system and the cleaning gas supply system; A substrate processing apparatus comprising:

11. A substrate mounting table having a substrate mounting surface on which a substrate is placed; a lifting unit capable of lifting and lowering the substrate placement table; a process gas supply system for supplying a process gas to the substrate mounting table; a cleaning gas supply system including: a first cleaning gas supply system capable of supplying a cleaning gas or a cleaning auxiliary gas that reacts with the cleaning gas to a side surface of the substrate mounting table; and a second cleaning gas supply system capable of supplying a gas different from the gas supplied from the first cleaning gas supply system to a side surface of the substrate mounting table; supplying a process gas to the substrate mounting table when the substrate is present on the substrate mounting surface; When the substrate is not present on the substrate mounting surface, a control unit configured to control the process gas supply system, the cleaning gas supply system, and the lifting unit so as to form a cleaning gas flow path on a side of the substrate mounting table and supply the cleaning gas and the cleaning assist gas to the cleaning gas flow path to cause a reaction between the cleaning gas and the cleaning assist gas; A substrate processing apparatus comprising:

12. a heater is provided within the substrate placement table, The substrate placement table is provided in a processing chamber, The substrate processing apparatus of claim 11 , wherein the control unit is configured to control the heater so that the temperature of the cleaning gas flow path is lower than the temperature of the processing chamber when the cleaning auxiliary gas is supplied from the second cleaning gas supply system.

13. a processing chamber capable of processing a substrate; a shower head provided upstream of the processing chamber; a substrate mounting table having a substrate mounting surface on which the substrate is mounted; a process gas supply system for supplying a process gas into the process chamber; a cleaning gas supply system including a first cleaning gas supply system capable of supplying a cleaning gas or a cleaning assist gas that reacts with the cleaning gas to a side surface of the substrate mounting table, and a second cleaning gas supply system capable of supplying a gas different from the gas supplied from the first cleaning gas supply system; an exhaust system including a processing chamber exhaust system disposed on a side of the processing chamber and a shower head exhaust system provided to the shower head; supplying a processing gas to the processing chamber while the substrate is placed on the substrate placement surface; When the substrate is not present on the substrate mounting surface, supplying the cleaning gas and the cleaning auxiliary gas to a side surface of the substrate mounting table in a state in which the exhaust rate of the processing chamber exhaust system is greater than the exhaust rate of the shower head exhaust system; Alternatively, the cleaning gas and the cleaning auxiliary gas are supplied to a side surface of the substrate mounting table in a state in which the exhaust volume of the shower head exhaust system is greater than the exhaust volume of the processing chamber exhaust system. a control unit configured to be able to control the processing gas supply system, the cleaning gas supply system, and the exhaust system; A substrate processing apparatus comprising:

14. supplying a processing gas into the processing chamber when a substrate is placed on a substrate placement surface of a substrate placement table disposed in the processing chamber; When the substrate is not present on the substrate mounting surface, a first cleaning gas supply system supplies a cleaning gas or a cleaning auxiliary gas that reacts with the cleaning gas to a side surface of the substrate mounting table, and a second cleaning gas supply system supplies one of the cleaning gas and the cleaning auxiliary gas, which is different from the gas supplied from the first cleaning gas supply system, to the side surface of the substrate mounting table via a transfer chamber provided below the processing chamber. Processing methods.

15. supplying a process gas to the substrate mounting table when a substrate is present on the substrate mounting surface of the substrate mounting table; When the substrate is not present on the substrate mounting surface, the cleaning gas and the cleaning auxiliary gas are mixed on the side of the substrate mounting table, or the cleaning gas and the cleaning auxiliary gas are supplied so as to react with each other on an end face of the substrate mounting table that is provided on the surface on which the substrate mounting surface is provided. Processing methods.

16. supplying a processing gas into the processing chamber when a substrate is placed on a substrate placement surface of a substrate placement table provided in the processing chamber; When the substrate is not present on the substrate mounting surface, A lifting unit that lifts and lowers the substrate stage forms a cleaning gas flow path on a side of the substrate stage, a cleaning gas or a cleaning auxiliary gas that reacts with the cleaning gas is supplied from a first cleaning gas supply system to the cleaning gas flow path, and a gas different from the gas supplied from the first cleaning gas supply system, out of the cleaning gas or the cleaning auxiliary gas, is supplied from a second cleaning gas supply system to the cleaning gas flow path. Processing methods.

17. supplying a processing gas into the processing chamber when a substrate is placed on a substrate placement surface of a substrate placement table disposed in the processing chamber; When the substrate is not present on the substrate mounting surface, supplying a cleaning gas and a cleaning auxiliary gas to a side surface of the substrate mounting table in a state in which the exhaust volume of a processing chamber exhaust system disposed on the side of the processing chamber is larger than the exhaust volume of a shower head exhaust system disposed on a shower head disposed upstream of the processing chamber; Alternatively, the cleaning gas and the cleaning auxiliary gas are supplied to a side surface of the substrate mounting table in a state in which the exhaust volume of the shower head exhaust system is greater than the exhaust volume of the processing chamber exhaust system. Processing methods.

18. A method for manufacturing a semiconductor device, comprising the method according to any one of claims 14 to 17.

19. supplying a process gas into the process chamber while a substrate is placed on a substrate mounting surface of a substrate mounting table disposed in the process chamber; supplying a cleaning gas or a cleaning auxiliary gas that reacts with the cleaning gas from a first cleaning gas supply system to a side surface of the substrate mounting table while the substrate is not present on the substrate mounting surface, and supplying a gas, which is different from the gas supplied from the first cleaning gas supply system, out of the cleaning gas or the cleaning auxiliary gas from a second cleaning gas supply system to the side surface of the substrate mounting table via a transfer chamber provided below the processing chamber; A program for causing a computer to execute the above in a substrate processing apparatus.

20. supplying a process gas to the substrate mounting table when a substrate is present on the substrate mounting surface of the substrate mounting table; supplying the cleaning gas and the cleaning auxiliary gas so that, when the substrate is not present on the substrate mounting surface, the cleaning gas and the cleaning auxiliary gas are mixed on a side of the substrate mounting table, or the cleaning gas and the cleaning auxiliary gas are reacted on an end face of the substrate mounting table that is provided on the surface on which the substrate mounting surface is provided; A program for causing a computer to execute the above in a substrate processing apparatus.

21. supplying a process gas into the process chamber when a substrate is placed on a substrate placement surface of a substrate placement table provided in the process chamber; When the substrate is not present on the substrate mounting surface, a step of forming a cleaning gas flow path on a side of the substrate mounting table by a lifting unit which lifts and lowers the substrate mounting table, supplying a cleaning gas or a cleaning auxiliary gas which reacts with the cleaning gas from a first cleaning gas supply system to the cleaning gas flow path, and supplying a gas, which is different from the gas supplied from the first cleaning gas supply system, out of the cleaning gas or the cleaning auxiliary gas, from a second cleaning gas supply system to the cleaning gas flow path. A program that is executed by a computer in a substrate processing apparatus.

22. supplying a process gas into the process chamber when a substrate is present on a substrate mounting surface of a substrate mounting table disposed in the process chamber; When the substrate is not present on the substrate mounting surface, supplying a cleaning gas and a cleaning auxiliary gas to a side surface of the substrate mounting table in a state in which the exhaust volume of a processing chamber exhaust system disposed on the side of the processing chamber is larger than the exhaust volume of a shower head exhaust system disposed on a shower head disposed upstream of the processing chamber; or supplying the cleaning gas and the cleaning auxiliary gas to a side surface of the substrate mounting table in a state in which the exhaust volume of the shower head exhaust system is greater than the exhaust volume of the processing chamber exhaust system. A program that is executed by a computer in a substrate processing apparatus.

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