Processing equipment

Abstract

To provide a technology capable of adjusting a gas flow in an interface direction.SOLUTION: A treatment apparatus according to an aspect of the invention includes: a treatment container having a generally cylindrical shape; a gas supply tube for supplying a gas into the treatment container; an exhaust window that extends in a longitudinal direction of the treatment container and exhausts the gas from the treatment container; and an exhaust duct that forms a first exhaust route for exhausting the gas from one side in the longitudinal direction of the exhaust window and a second exhaust route for exhausting the gas from the other side in the longitudinal direction of the exhaust window, the gas being exhausted from the exhaust window. The exhaust duct has a first gas introduction part for introducing a ballast gas to the first exhaust route and a second gas introduction part for introducing the ballast gas to the second exhaust route.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a processing device. [Background technology]

[0002] There is known a processing apparatus that includes a processing vessel that houses a boat on which substrates are loaded, and an injector that extends vertically along the inner wall of the processing vessel near the processing vessel and has a plurality of gas holes in the longitudinal direction (see, for example, Patent Document 1). Patent Document 1 discloses a technology in which the processing vessel has an inner cylinder and an outer cylinder, and a flow straightening plate is provided between the outer peripheral wall of the inner cylinder and the inner peripheral wall of the outer periphery, thereby suppressing unevenness in the gas flow in the processing vessel. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2016-178136 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can adjust the gas flow in the inter-face direction. [Means for solving the problem]

[0005] A processing apparatus according to one aspect of the present disclosure includes a processing vessel having a substantially cylindrical shape. a processing vessel for accommodating a plurality of substrates therein at intervals in the longitudinal direction of the processing vessel, a gas supply pipe that supplies gas into the processing vessel, an exhaust window that extends in the longitudinal direction of the processing vessel and exhausts the gas from within the processing vessel, and an exhaust duct that forms a first exhaust flow path that exhausts the gas exhausted through the exhaust window from one longitudinal side of the exhaust window and a second exhaust flow path that exhausts the gas from the other longitudinal side of the exhaust window, wherein the exhaust duct has a first gas inlet portion that introduces a ballast gas into the first exhaust flow path and a second gas inlet portion that introduces a ballast gas into the second exhaust flow path. Effect of the Invention

[0006] According to the present disclosure, the flow of gas in the inter-surface direction can be adjusted. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a vertical cross-sectional view showing an example of a processing apparatus according to a first embodiment; [Diagram 2] FIG. 1 is a cross-sectional view showing an example of a processing apparatus according to a first embodiment; [Diagram 3] FIG. 1 is a side view illustrating an example of the processing apparatus according to a first embodiment; [Figure 4] FIG. 1 is a diagram showing an example of an exhaust duct of the processing apparatus of the first embodiment; [Diagram 5] FIG. 11 is a vertical cross-sectional view showing an example of a processing apparatus according to a second embodiment; [Figure 6] FIG. 11 is a cross-sectional view showing an example of a processing apparatus according to a second embodiment. [Figure 7] FIG. 11 is a vertical cross-sectional view showing an example of a processing apparatus according to a second embodiment; [Figure 8] FIG. 13 is a vertical cross-sectional view showing an example of a processing apparatus according to a third embodiment; [Figure 9] FIG. 13 is a cross-sectional view showing an example of a processing apparatus according to a third embodiment. [Figure 10] FIG. 13 is a diagram showing an example of an exhaust duct of the processing apparatus according to the third embodiment; [Figure 11] FIG. 13 is a cross-sectional view showing an example of a processing apparatus according to a fourth embodiment. [Figure 12] FIG. 13 is a diagram showing an example of an exhaust duct of the processing apparatus according to the fourth embodiment; [Figure 13] Schematic diagram of the model of the processing equipment used in the analysis [Figure 14] A diagram showing the results of an analysis of the inter-surface distribution of the mass flow rate of the processing gas passing through the exhaust hole. [Figure 15] Schematic diagram of the model of the processing equipment used in the analysis [Figure 16] A diagram showing the results of an analysis of the inter-surface distribution of the mass flow rate of the processing gas passing through the exhaust hole. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all of the accompanying drawings, the same or corresponding members or parts are designated by the same or corresponding reference numerals, and duplicated descriptions will be omitted.

[0009] [First embodiment] An example of a processing apparatus according to a first embodiment will be described with reference to Figs. 1 to 4. The processing apparatus according to the first embodiment is a batch-type vertical processing apparatus capable of simultaneously forming films on a plurality of substrates. The processing apparatus according to the embodiment is an apparatus for depositing a film on a substrate by, for example, chemical vapor deposition (CVD) or atomic layer deposition (ALD).

[0010] The processing apparatus 100 of the first embodiment includes a processing vessel 121 having an internal space for processing a substrate 110, a lid 130 that airtightly closes an opening at the bottom of the processing vessel 121, and a substrate holder 140 that holds the substrate 110. The substrate 110 is, for example, a semiconductor wafer such as a silicon wafer. The substrate holder 140 is also called a wafer boat.

[0011] The processing vessel 121 has a processing vessel body 122 having a generally cylindrical shape with a ceiling and an open lower end. The processing vessel body 122 is made of, for example, quartz. A flange portion 123 is formed at the lower end of the processing vessel body 122. The processing vessel 121 also has, for example, a manifold 124 having a generally cylindrical shape. The manifold 124 is made of, for example, stainless steel. A flange portion 125 is formed at the upper end of the manifold 124, and the flange portion 123 of the processing vessel body 122 is placed on the flange portion 125. A seal member 126 such as an O-ring is sandwiched between the flange portion 125 and the flange portion 123.

[0012] The lid 130 is airtightly attached to the opening at the lower end of the manifold 124 via a seal member 131 such as an O-ring. The lid 130 is made of, for example, stainless steel. A through hole is formed in the center of the lid 130, passing through the lid 130 in the vertical direction. A rotating shaft 134 is disposed in the through hole. The gap between the lid 130 and the rotating shaft 134 is sealed by a magnetic fluid seal unit 133. The lower end of the rotating shaft 134 is rotatably supported by an arm 136 of a lift unit (not shown). A rotating plate 137 is provided at the upper end of the rotating shaft 134. A substrate holder 140 is placed on the rotating plate 137 via a heat retention table 138.

[0013] The substrate holder 140 holds the plurality of substrates 110 at intervals in the vertical direction. Each of the plurality of substrates 110 is held horizontally. The substrate holder 140 is made of, for example, quartz (SiO 2 ) or silicon carbide (SiC). When arm 136 is raised by a lifting unit (not shown), lid 130 and substrate holder 140 are raised, substrate holder 140 is carried into processing vessel 121, and the opening at the bottom end of processing vessel 121 is sealed by lid 130. When arm 136 is lowered by a lifting unit (not shown), lid 130 and substrate holder 140 are lowered, and substrate holder 140 is carried out to the outside of processing vessel 121. When rotating shaft 134, substrate holder 140 rotates together with rotating plate 137.

[0014] The processing apparatus 100 in this embodiment has gas supply pipes 151 and 152. The gas supply pipe 151 is made of, for example, quartz (SiO 2 ) and supplies gas to the inside of the processing vessel 121. The processing apparatus 100 may further include another gas supply pipe.

[0015] The gas supply pipe 151 has a nozzle portion 151a disposed vertically inside the processing vessel body 122, for example. The nozzle portion 151a has a plurality of gas holes 151b spaced apart in the vertical direction. The plurality of gas holes 151b discharge gas horizontally. The nozzle portion 151a has a horizontal portion of the gas supply pipe that penetrates the manifold 124 horizontally, and gas supplied to each horizontal portion is sent to the nozzle portion 151a and discharged horizontally from each gas hole 151b. On the other hand, the gas supply pipe 152 penetrates the manifold 124 horizontally, and gas supplied to the gas supply pipe 152 from outside the manifold 124 is discharged inside the manifold 124.

[0016] The processing vessel body 122 is provided with an exhaust window 128. The exhaust window 128 is provided at a position facing the gas hole 151b. The exhaust window 128 exhausts the inside of the processing vessel 121. The exhaust window 128 is a rectangular exhaust slit whose longitudinal direction is the vertical direction. However, the exhaust window 128 may be a plurality of exhaust holes provided at intervals in the vertical direction. The exhaust hole may be, for example, circular or rectangular. The exhaust window 128 may be a combination of an exhaust slit and an exhaust hole. The processing vessel body 122 is provided with an exhaust duct 180 so as to surround the exhaust window 128.

[0017] The exhaust duct 180 includes a wall portion 181, a flow dividing plate 182, exhaust ports 183a and 183b, and gas inlets 184a and 184b.

[0018] The wall portion 181 is attached to the outer wall of the processing vessel body 122 so as to surround the exhaust window 128. The wall portion 181 is formed so as to protrude radially outward from the processing vessel body 122.

[0019] The flow dividing plate 182 is provided inside the wall 181. The flow dividing plate 182 has a rectangular shape and is provided parallel to the longitudinal direction of the exhaust window 128. The flow dividing plate 182 connects the outer wall of the processing vessel body 122 and the inner wall of the wall 181. The flow dividing plate 182 extends upward from a bottom 181a of the wall 181 to form a gap 185 between the bottom 181a and the top 181b of the wall 181. As a result, a part of the processing gas flowing into the wall 181 from the exhaust window 128 passes through an exhaust flow path 186a that runs from the lower part of the exhaust window 128 to the exhaust port 183a, and the rest passes through an exhaust flow path 186b that runs from the upper part of the exhaust window 128 through the gap 185 to the exhaust port 183b.

[0020] The exhaust port 183a is provided below the exhaust window 128 in the wall portion 181. The exhaust port 183a exhausts the process gas that flows into the inside of the wall portion 181 from the exhaust window 128, from below the exhaust window 128.

[0021] The exhaust port 183b is provided at a position on the wall portion 181 across the flow dividing plate 182. The exhaust port 183b exhausts the process gas that flows into the inside of the wall portion 181 from the exhaust window 128, from above the exhaust window 128.

[0022] The gas inlet 184a is provided on the side where the exhaust window 128 is provided in the bottom 181a of the wall 181. However, the gas inlet 184a may be provided below the exhaust window 128 in the side 181c of the wall 181 on the side where the exhaust window 128 is provided. The gas inlet 184a introduces ballast gas into the exhaust flow path 186a.

[0023] The gas inlet 184b is provided on the side of the bottom 181a of the wall 181 where the exhaust window 128 is not provided. However, the gas inlet 184b may be provided on the side 181d of the wall 181 where the exhaust window 128 is not provided. The gas inlet 184b may be provided above the exhaust window 128 on the side 181c of the wall 181 where the exhaust window 128 is provided. The gas inlet 184b may be provided on the top 181b of the wall 181. The gas inlet 184b introduces ballast gas into the exhaust flow path 186b.

[0024] The gas inlets 184a and 184b may be openings formed in the wall 181, or may be gas pipes extending through the wall 181 to the inside of the wall 181. The ballast gas may be, for example, N 2 , Ar, or other inert gas.

[0025] In the exhaust duct 180, the processing gas supplied into the processing vessel 121 passes through the exhaust window 128 and flows into the inside of the wall 181. The processing gas that flows into the inside of the wall 181 is exhausted through either the exhaust port 183a or 183b. At this time, the conductance of the exhaust flow path 186a and the conductance of the exhaust flow path 186b can be controlled by introducing ballast gas into the inside of the wall 181 from the gas inlet ports 184a and 184b. This makes it possible to adjust the balance between the flow rate of the processing gas exhausted through the exhaust port 183a and the flow rate of the processing gas exhausted through the exhaust port 183b. That is, the strength of upward and downward drawing of the processing gas flowing through the exhaust window 128 in the exhaust duct 180 can be adjusted. As a result, the flow rate distribution of the processing gas in the vertical direction (interface direction) in the processing vessel 121 can be adjusted.

[0026] For example, by increasing the flow rate of the ballast gas introduced from the gas inlet 184a to the exhaust flow path 186a, the flow rate of the process gas exhausted through the exhaust port 183a decreases and the flow rate of the process gas exhausted through the exhaust port 183b increases. Also, by decreasing the flow rate of the ballast gas introduced from the gas inlet 184a to the exhaust flow path 186a, the flow rate of the process gas exhausted through the exhaust port 183a increases and the flow rate of the process gas exhausted through the exhaust port 183b decreases.

[0027] For example, by increasing the flow rate of the ballast gas introduced from the gas inlet 184b to the exhaust passage 186b, the flow rate of the process gas exhausted through the exhaust port 183a increases and the flow rate of the process gas exhausted through the exhaust port 183b decreases. Also, by decreasing the flow rate of the ballast gas introduced from the gas inlet 184b to the exhaust passage 186b, the flow rate of the process gas exhausted through the exhaust port 183a decreases and the flow rate of the process gas exhausted through the exhaust port 183b increases.

[0028] An exhaust pipe 155 is connected to the exhaust ports 183a and 183b. An on-off valve 157 and an exhaust device 158 are connected to the exhaust pipe 155 in this order. Exhaust inside the processing vessel 121 is controlled by opening and closing the on-off valve 157. The on-off valve 157 also serves as a pressure control valve that controls the air pressure inside the processing vessel 121. The exhaust device 158 includes a vacuum pump and exhausts gas inside the processing vessel 121. The exhausted gas is sent to a detoxification device (not shown) where harmful components of the exhaust gas are removed, and then the exhausted gas is released into the atmosphere.

[0029] The processing apparatus 100 in this embodiment includes a heating unit 160. The heating unit 160 heats the inside of the processing vessel 121, thereby improving the processing capacity of the gas supplied into the inside of the processing vessel 121. The heating unit 160 is disposed outside the processing vessel 121, and heats the inside of the processing vessel 121 from the outside of the processing vessel 121. For example, the heating unit 160 is formed in a substantially cylindrical shape so as to surround the processing vessel body 122. The heating unit 160 is formed of, for example, an electric heater or the like.

[0030] The processing apparatus 100 in this embodiment includes a processing gas supply unit 170. The processing gas supply unit 170 supplies a processing gas into the processing vessel 121. The processing gas includes, for example, a raw material gas used in film formation. The processing gas supply unit 170 includes a processing gas source, a processing gas pipe, a flow controller, a valve (none of which are shown), and the like. The processing gas source and the gas supply pipe 151 are connected by the processing gas pipe, and the processing gas is supplied from the processing gas source to the gas supply pipe 151. The processing gas is horizontally discharged toward the substrate 110 from the gas hole 151b of the nozzle portion 151a. The flow controller and the valve are provided midway along the processing gas pipe, and the flow rate of the processing gas is controlled by the flow controller, and the supply of the processing gas is controlled by opening and closing the valve.

[0031] The processing apparatus 100 in this embodiment includes a purge gas supply unit 171. The purge gas supply unit 171 supplies a purge gas into the processing vessel 121 to remove the processing gas remaining in the processing vessel 121. The purge gas is, for example, N 2 The purge gas may be an inert gas such as Ar. The purge gas supply unit 171 includes a purge gas supply source, a purge gas pipe, a flow rate controller, a valve (none of which are shown). The purge gas supply source and the gas supply pipe 152 are connected by the purge gas pipe, and the purge gas is supplied from the purge gas supply source to the gas supply pipe 152. The purge gas supplied to the gas supply pipe 152 is discharged into the inside of the manifold 124. The flow rate controller and the valve are provided midway through the purge gas pipe, and the flow rate of the purge gas is controlled by the flow rate controller, and the supply of the purge gas is controlled by opening and closing the valve. In the present embodiment, the case where the purge gas is supplied from the gas supply pipe 152 has been described, but the present invention is not limited to this, and the purge gas may be supplied from the gas supply pipe 151, for example.

[0032] The processing apparatus 100 in this embodiment includes a ballast gas supply unit 172. The ballast gas supply unit 172 controls the flow of the processing gas in the exhaust duct 180 by supplying ballast gas into the exhaust duct 180. The ballast gas is, for example, N 2The ballast gas supply unit 172 includes a ballast gas supply source, a ballast gas pipe, a flow rate controller, a valve (none of which are shown), and the like. The ballast gas supply source and the gas inlets 184a and 184b are connected by the ballast gas pipe, and the ballast gas is supplied from the ballast gas supply source to the gas inlets 184a and 184b. The ballast gas supplied to the gas inlets 184a and 184b is discharged into the exhaust duct 180. The flow rate controller and the valve are provided midway through the ballast gas pipe, and the flow rate of the ballast gas is controlled by the flow rate controller, and the supply of the ballast gas is controlled by opening and closing the valve. Note that the purge gas pipe of the purge gas supply unit 171 may be branched and connected to the gas inlets 184a and 184b, and the purge gas from the purge gas supply source may be used as the ballast gas.

[0033] The processing device 100 in this embodiment has a control unit 190. The control unit 190 is, for example, a computer, and controls the overall operation of the processing device 100. In addition, a computer program that performs the overall operation of the processing device 100 may be stored in a storage medium. The storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.

[0034] Second Embodiment An example of a processing apparatus according to the second embodiment will be described with reference to Fig. 5 to Fig. 7. The processing apparatus according to the second embodiment is a batch-type vertical processing apparatus capable of simultaneously forming films on a plurality of substrates. The processing apparatus according to the embodiment is an apparatus for depositing a film on a substrate by, for example, CVD or ALD.

[0035] The processing apparatus 200 has a processing vessel 234 for accommodating a substrate W, and a lid 236 for closing an opening at the lower end of the processing vessel 234 on the Z2 side. The substrate W may be a semiconductor wafer such as a silicon wafer. The processing apparatus 200 can be accommodated in the processing vessel 234 and has a substrate holder 238 for holding a plurality of substrates W at predetermined intervals, a gas supply unit 240 for supplying gas into the processing vessel 234, and an exhaust unit 241 for exhausting gas from the processing vessel 234. A heating unit 242 for heating the inside of the processing vessel 234 is provided outside the processing vessel 234.

[0036] The processing vessel 234 is formed by an approximately cylindrical inner tube 244 whose lower end on the Z2 side is open and has a ceiling portion 244A on the Z1 side, and an approximately cylindrical outer tube 246 whose lower end on the Z2 side is open and has a ceiling on the Z1 side covering the outside of the inner tube 244. The inner tube 244 and the outer tube 246 are formed of a heat-resistant material such as quartz, and are arranged coaxially along the Z1-Z2 direction to form a double tube structure.

[0037] A ceiling portion 244A of the inner pipe 244 is, for example, flat. A nozzle accommodating portion 248 for accommodating a gas supply pipe is formed inside the inner pipe 244 along the Z1-Z2 direction. For example, as shown in Fig. 6, a protrusion 250 that protrudes outward in the X1 direction is formed in a part of the side wall of the inner pipe 244, and the inside of the formed protrusion 250 may be used as the nozzle accommodating portion 248. A rectangular exhaust window 252 having a width L1 is formed along the Z1-Z2 direction in the side wall on the X2 side, which is the opposite side of the inner pipe 244 facing the nozzle accommodating portion 248.

[0038] Exhaust window 252 is an exhaust port for exhausting the inside of inner tube 244. The length of exhaust window 252 in the Z1-Z2 direction is the same as or longer than the length of substrate holder 238. That is, the upper end of exhaust window 252 on the Z1 side is formed longer on the Z1 side than a position corresponding to the upper end of substrate holder 238, and the lower end of exhaust window 252 on the Z2 side is formed longer on the Z2 side than a position corresponding to the lower end of substrate holder 238.

[0039] The lower end of the processing vessel 234 on the Z2 side is supported by a manifold 254 having a substantially cylindrical shape and made of, for example, stainless steel. A flange portion 256 is formed on the upper end of the manifold 254 on the Z1 side, and the lower end of the outer tube 246 on the Z2 side is connected onto the flange portion 256. A seal member 258 such as an O-ring is provided between the flange portion 256 and the outer tube 246, and the flange portion 256 and the outer tube 246 are connected via the seal member 258. In this embodiment, the area surrounded by the inner tube 244, the manifold 254, and the lid 236 inside the processing vessel 234 may be referred to as the inside of the processing vessel.

[0040] An annular support 260 is provided on the inner wall on the Z1 side, which is the upper part of the manifold 254, and the lower end of the inner tube 244 on the Z2 side is placed on the support 260 to support it. A lid 236 is attached to the opening of the lower end on the Z2 side of the manifold 254 via a seal member 262 such as an O-ring, and hermetically closes the opening of the lower end on the Z2 side of the processing vessel 234, i.e., the opening of the manifold 254. The lid 236 is formed of, for example, stainless steel.

[0041] A rotating shaft 266 is provided penetrating the center of the lid 236 via a magnetic fluid seal portion 264. The lower portion of the rotating shaft 266 on the Z2 side is rotatably supported by an arm 268A of an elevation portion 268 formed of a boat elevator.

[0042] A rotating plate 269 is provided at the upper end on the Z1 side of the rotating shaft 266, and a substrate holder 238 that holds a substrate W is placed on the rotating plate 269 via a quartz heat retention stand 270. Therefore, by raising and lowering the arm 268A by the lifting part 268, the lid 236 and the substrate holder 238 move vertically as a unit, and the substrate holder 238 can be inserted into and removed from the processing vessel 234.

[0043] The gas supply unit 240 is provided in the manifold 254, and can supply a first source gas, a second source gas, a purge gas, and the like to the inside of the inner tube 244. The gas supply unit 240 has a plurality (for example, three) of quartz gas supply pipes 271, 272, 273. Each of the gas supply pipes 271, 272, 273 has a dispersion nozzle portion 271A, 272A, 273A along the Z1-Z2 direction inside the inner tube 244. The end portion of each of the gas supply pipes 271, 272, 273 on the Z2 direction side is bent toward the X1 side in an L shape, and passes through and is supported by the manifold 254.

[0044] As shown in FIG. 6, the gas supply pipes 271, 272, 273 are installed in the nozzle accommodating portion 248 of the inner pipe 244 along the circumferential direction. In each of the gas supply pipes 271, 272, 273, a plurality of gas holes 271B, 272B, 273B are formed at a predetermined interval in the distribution nozzle portion 271A, 272A, 273A provided inside the inner pipe 244. Each of the gas holes 271B, 272B, 273B emits each gas in a substantially horizontal direction. The predetermined interval is, for example, the same as the interval between the substrates W supported by the substrate holder 238. In addition, the positions of the gas holes 271B, 272B, 273B of the distribution nozzle portion 271A, 272A, 273A in the Z1-Z2 direction are located at the middle between the substrates W adjacent to each other in the Z1-Z2 direction, and each gas can be efficiently supplied to the space between the substrates W. However, the predetermined intervals between the gas holes 271B, 272B, and 273B are not limited to the above.

[0045] The positions of the gas holes 271B, 272B, 273B are not limited to the intermediate positions between adjacent substrates W, and may be any positions, such as at the same height as the substrate W. Furthermore, the orientation of the gas holes 271B, 272B, 273B may be any direction, such as toward the center of the substrate W, toward the outer periphery of the substrate W, or toward the inner tube 244.

[0046] A substantially cylindrical heating unit 242 is provided on the outer periphery of the outer tube 246 so as to surround the periphery of the outer tube 246. The heating unit 242 can heat the substrate W accommodated in the processing vessel 234 and the gas in the distribution nozzle units 271A and 272A of the gas supply pipes 271 and 272.

[0047] In this embodiment, a first source gas is supplied from the gas supply pipe 271, a second source gas is supplied from the gas supply pipe 272, and a purge gas is supplied from the gas supply pipe 273. A first source gas supply source 276a is connected to the gas supply pipe 271 via a flow rate controller 276b and an on-off valve 276c. A second source gas supply source 277a is connected to the gas supply pipe 272 via a flow rate controller 277b and an on-off valve 277c. A purge gas supply source 278a is connected to the gas supply pipe 273 via a flow rate controller 278b and an on-off valve 278c.

[0048] An exhaust pipe 278 is provided on the Z1 side wall which forms the upper part of the manifold 254, above the support portion 260, and gas inside the inner tube 244 is exhausted from the exhaust window 252 through the space S between the inner tube 244 and the outer tube 246.

[0049] The process gas flowing into the space S from the exhaust window 252 is divided into upper and lower flows by the exhaust duct 280 and exhausted.

[0050] The exhaust duct 280 includes a wall portion 281, a flow dividing plate 282, exhaust ports 283a and 283b, and gas inlets 284a and 284b.

[0051] The wall portion 281 is constituted by an inner tube 244 and an outer tube 246 .

[0052] The flow dividing plate 282 is provided inside the wall portion 281, in other words, in the space portion S between the inner pipe 244 and the outer pipe 246. The flow dividing plate 282 has a plate shape and connects the outer wall of the inner pipe 244 and the inner wall of the outer pipe 246. The flow dividing plate 282 limits one exhaust flow path 286a from the exhaust window 252 toward the exhaust pipe 278 to only the lower portion, and limits the other exhaust flow path 286b from the exhaust window 252 toward the exhaust pipe 278 to only the upper portion. As a result, a part of the process gas flowing from the exhaust window 252 into the space portion S is exhausted through the exhaust flow path 286a extending from below the exhaust window 252 to the exhaust pipe 278, and the rest is exhausted through the exhaust flow path 286b extending from above the exhaust window 252 to the exhaust pipe 278.

[0053] The exhaust port 283a is formed below the space S by the flow dividing plate 282. The exhaust port 283b is formed above the space S by the flow dividing plate 282.

[0054] The gas inlet 284a is a gas pipe that penetrates the manifold 254 and extends to the exhaust flow path 286a of the space S. The tip of the gas pipe is located at approximately the same height as the exhaust port 283a. Ballast gas with a controlled flow rate is supplied to the gas inlet 284a from a ballast gas supply unit 287. The gas inlet 284a introduces the ballast gas supplied from the ballast gas supply unit 287 into the exhaust flow path 286a.

[0055] The gas inlet 284b is a gas pipe that penetrates the manifold 254 and extends to the exhaust flow path 286b of the space S. The tip of the gas pipe is located at approximately the same height as the exhaust port 283b. Ballast gas with a controlled flow rate is supplied to the gas inlet 284b from a ballast gas supply unit 287. The gas inlet 284b introduces the ballast gas supplied from the ballast gas supply unit 287 into the exhaust flow path 286b.

[0056] The ballast gas is, for example, N 2 , Ar, or other inert gas.

[0057] In the exhaust duct 280, the process gas supplied into the inner pipe 244 passes through the exhaust window 252 and flows into the space S. The process gas flowing into the space S is exhausted through either the exhaust port 283a or 283b. At this time, the conductance of the exhaust flow path 286a and the conductance of the exhaust flow path 286b can be controlled by introducing ballast gas into the inside of the wall portion 281 from the gas inlet ports 284a and 284b. This makes it possible to adjust the balance between the flow rate of the process gas exhausted through the exhaust port 283a and the flow rate of the process gas exhausted through the exhaust port 283b. That is, the strength of upward and downward drawing of the process gas flowing through the exhaust window 252 in the exhaust duct 280 can be adjusted. As a result, the flow rate distribution of the process gas in the vertical direction (interface direction) in the inner pipe 244 can be adjusted.

[0058] For example, by increasing the flow rate of the ballast gas introduced from the gas inlet 284a to the exhaust passage 286a, the flow rate of the process gas exhausted through the exhaust port 283a decreases and the flow rate of the process gas exhausted through the exhaust port 283b increases. Also, by decreasing the flow rate of the ballast gas introduced from the gas inlet 284a to the exhaust passage 286a, the flow rate of the process gas exhausted through the exhaust port 283a increases and the flow rate of the process gas exhausted through the exhaust port 283b decreases.

[0059] Also, for example, by increasing the flow rate of the ballast gas introduced from the gas inlet 284b to the exhaust passage 286b, the flow rate of the process gas exhausted through the exhaust port 283a increases and the flow rate of the process gas exhausted through the exhaust port 283b decreases. Also, by decreasing the flow rate of the ballast gas introduced from the gas inlet 284b to the exhaust passage 286b, the flow rate of the process gas exhausted through the exhaust port 283a decreases and the flow rate of the process gas exhausted through the exhaust port 283b increases.

[0060] The exhaust pipe 278 is connected to the exhaust unit 241. In the exhaust unit 241, a pressure adjustment valve 279a, an exhaust passage 279b, and a vacuum pump 279c are provided in this order from the exhaust pipe 278, and the inside of the processing container 234 can be evacuated to a vacuum.

[0061] In this embodiment, inside the inner tube 244, a plurality of substrates W are placed along the Z1-Z2 direction perpendicular to the wafer surface with the wafer surface being parallel to the XY plane. The first source gas and the second source gas are discharged between the substrates W from the gas holes 271B, 272B of the distribution nozzle parts 271A, 272A. The discharged source gas passes between the substrates W to form a film, but the gas that does not contribute to the film formation exits the inner tube 244 from the exhaust window 252 on the X2 side to the outside, passes through the space S between the inner tube 244 and the outer tube 246, and is exhausted from the exhaust tube 278.

[0062] The processing device 200 in this embodiment has a control unit 290. The control unit 290 is, for example, a computer, and controls the overall operation of the processing device 200. In addition, a computer program that performs the overall operation of the processing device 200 may be stored in a storage medium. The storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.

[0063] Third embodiment An example of a processing apparatus 300 according to the third embodiment will be described with reference to Fig. 8 to Fig. 10. Processing apparatus 300 according to the third embodiment differs from processing apparatus 200 according to the second embodiment in that processing apparatus 300 according to the third embodiment includes exhaust duct 380 provided in inner tube 244 so as to surround exhaust window 252. The following description will focus on the differences from processing apparatus 200 according to the second embodiment.

[0064] The exhaust duct 380 is provided to surround the exhaust window 252. The exhaust duct 380 has a wall portion 381, a flow dividing plate 382, ​​exhaust ports 383a and 383b, and gas inlets 384a and 384b.

[0065] The wall portion 381 is attached to the outer wall of the inner tube 244 so as to surround the exhaust window 252. The wall portion 381 is formed so as to protrude radially outward from the inner tube 244.

[0066] The flow dividing plate 382 is provided inside the wall portion 381. The flow dividing plate 382 has a rectangular shape and is provided parallel to the longitudinal direction of the exhaust window 252. The flow dividing plate 382 connects the outer wall of the inner pipe 244 and the inner wall of the wall portion 381. The flow dividing plate 382 extends upward from a bottom portion 381a of the wall portion 381 and forms a gap 385 between the bottom portion 381a of the wall portion 381 and a top portion 381b of the wall portion 381. As a result, a part of the process gas flowing into the wall portion 381 from the exhaust window 252 passes through an exhaust flow path 386a that runs from the lower portion of the exhaust window 252 to the exhaust port 383a, and the rest passes through an exhaust flow path 386b that runs from the upper portion of the exhaust window 252 through the gap 385 to the exhaust port 383b.

[0067] The exhaust port 383a is provided below the exhaust window 252 in the wall portion 381. The exhaust port 383a exhausts the process gas that flows into the inside of the wall portion 381 from the exhaust window 252, from below the exhaust window 252.

[0068] The exhaust port 383b is provided at a position on the wall portion 381 across the flow dividing plate 382. The exhaust port 383b exhausts the process gas that flows into the inside of the wall portion 381 from the exhaust window 252, from above the exhaust window 252.

[0069] The gas inlet 384a is provided on the side where the exhaust window 252 is provided in the bottom 381a of the wall 381. However, the gas inlet 384a may be provided below the exhaust window 252 in the side 381c of the wall 381 on the side where the exhaust window 252 is provided. Ballast gas with a controlled flow rate is supplied to the gas inlet 384a from a ballast gas supply unit 387. The gas inlet 384a introduces the ballast gas supplied from the ballast gas supply unit 387 into the exhaust flow path 386a.

[0070] The gas inlet 384b is provided on the side of the bottom 381a of the wall 381 where the exhaust window 252 is not provided. However, the gas inlet 384b may be provided on the side 381d of the wall 381 where the exhaust window 252 is not provided. The gas inlet 384b may be provided above the exhaust window 252 on the side 381c of the wall 381 where the exhaust window 252 is provided. The gas inlet 384b may be provided on the top 381b of the wall 381. Ballast gas with a controlled flow rate is supplied from the ballast gas supply unit 387 to the gas inlet 384b. The gas inlet 384b introduces the ballast gas supplied from the ballast gas supply unit 387 into the exhaust flow path 386b.

[0071] The gas inlets 384a and 384b may be openings formed in the wall 381, or may be gas pipes extending through the wall 381 to the inside of the wall 381. The ballast gas may be, for example, N 2 , Ar, or other inert gas.

[0072] In the exhaust duct 380, the process gas supplied into the inner pipe 244 passes through the exhaust window 252 and flows into the inside of the wall 381. The process gas that flows into the inside of the wall 381 is exhausted through either the exhaust port 383a or 383b. At this time, the conductance of the exhaust flow path 386a and the conductance of the exhaust flow path 386b can be controlled by introducing ballast gas into the inside of the wall 381 from the gas inlet ports 384a and 384b. This makes it possible to adjust the balance between the flow rate of the process gas exhausted through the exhaust port 383a and the flow rate of the process gas exhausted through the exhaust port 383b. That is, the strength of upward and downward drawing of the process gas flowing through the exhaust window 252 in the exhaust duct 380 can be adjusted. As a result, the flow rate distribution of the process gas in the vertical direction (interface direction) in the inner pipe 244 can be adjusted.

[0073] For example, by increasing the flow rate of the ballast gas introduced from the gas inlet 384a to the exhaust passage 386a, the flow rate of the process gas exhausted through the exhaust port 383a decreases, and the flow rate of the process gas exhausted through the exhaust port 383b increases. Also, by decreasing the flow rate of the ballast gas introduced from the gas inlet 384a to the exhaust passage 386a, the flow rate of the process gas exhausted through the exhaust port 383a increases, and the flow rate of the process gas exhausted through the exhaust port 383b decreases.

[0074] Also, for example, by increasing the flow rate of the ballast gas introduced from the gas inlet 384b to the exhaust passage 386b, the flow rate of the process gas exhausted through the exhaust port 383a increases and the flow rate of the process gas exhausted through the exhaust port 383b decreases. Also, by decreasing the flow rate of the ballast gas introduced from the gas inlet 384b to the exhaust passage 386b, the flow rate of the process gas exhausted through the exhaust port 383a decreases and the flow rate of the process gas exhausted through the exhaust port 383b increases.

[0075] The exhaust ports 383a and 383b are connected to the space S. Thus, the processing gas that has passed through the exhaust ports 383a and 383b is exhausted by the exhaust unit 241 through the space S. The exhaust unit 241 is provided with a pressure adjustment valve 279a, an exhaust passage 279b, and a vacuum pump 279c in this order from an exhaust pipe 278, and can evacuate the inside of the processing container 234.

[0076] [Fourth embodiment] An example of a processing apparatus 400 according to a fourth embodiment will be described with reference to Figs. 11 and 12. The processing apparatus 400 according to the fourth embodiment differs from the processing apparatus 300 according to the third embodiment in that an exhaust port provided at the lower part of an exhaust duct extends in the circumferential direction of a processing vessel. The following description will focus on the differences from the processing apparatus 300 according to the third embodiment.

[0077] Exhaust duct 480 is provided to surround exhaust window 252. Exhaust duct 480 has a wall portion 481, a flow dividing plate 482, exhaust ports 483a and 483b, and gas inlets 484a and 484b.

[0078] The wall portion 481 is attached to the outer wall of the inner tube 244 so as to surround the exhaust window 252. The wall portion 481 is formed so as to protrude radially outward from the inner tube 244.

[0079] The flow dividing plate 482 is provided inside the wall portion 481. The flow dividing plate 482 has a rectangular shape and is provided parallel to the longitudinal direction of the exhaust window 252. The flow dividing plate 482 connects the outer wall of the inner pipe 244 and the inner wall of the wall portion 481. The flow dividing plate 482 extends upward from a bottom portion 481a of the wall portion 481 and forms a gap 485 between the bottom portion 481a of the wall portion 481 and a top portion 481b of the wall portion 481. As a result, a part of the process gas flowing into the wall portion 481 from the exhaust window 252 passes through an exhaust flow path 486a that reaches the exhaust port 483a from below the exhaust window 252, and the rest passes through an exhaust flow path 486b that reaches the exhaust port 483b from above the exhaust window 252 through the gap 485.

[0080] The exhaust port 483a is provided below the exhaust window 252 in the wall portion 481. The exhaust port 483a extends in the circumferential direction in the lower portion of the wall portion 481. The exhaust port 483a exhausts the process gas that flows into the inside of the wall portion 481 from the exhaust window 252, from below the exhaust window 252.

[0081] The exhaust port 483b is provided at a position on the wall portion 481 across the flow dividing plate 482. The exhaust port 483b extends in the circumferential direction at the lower part of the wall portion 481. The exhaust port 483b exhausts the process gas flowing into the wall portion 481 from the exhaust window 252, from above the exhaust window 252.

[0082] The gas inlet 484a is provided in a portion extending in the circumferential direction of the exhaust port 483a. This can prevent the ballast gas introduced from the gas inlet 484a into the exhaust flow path 486a from passing through the exhaust window 252 and diffusing back into the inside of the inner tube 244. However, the gas inlet 484a may be provided on the side where the exhaust window 252 is provided in the bottom part 481a of the wall part 481. The gas inlet 484a may be provided below the exhaust window 252 in the side part 481c of the wall part 481 on the side where the exhaust window 252 is provided. The gas inlet 484a is supplied with ballast gas whose flow rate is controlled from the ballast gas supply part 487. The gas inlet 484a introduces the ballast gas supplied from the ballast gas supply part 487 into the exhaust flow path 486a.

[0083] The gas inlet 484b is provided in a portion extending in the circumferential direction of the exhaust port 483b. This can prevent the ballast gas introduced from the gas inlet 484b to the exhaust flow path 486b from passing through the exhaust window 252 and diffusing back into the inside of the inner tube 244. However, the gas inlet 484b may be provided on the side of the bottom 481a of the wall 481 where the exhaust window 252 is not provided. The gas inlet 484b may be provided on the side 481d of the wall 481 where the exhaust window 252 is not provided. The gas inlet 484b may be provided above the exhaust window 252 on the side 481c of the wall 481 where the exhaust window 252 is provided. The gas inlet 484b may be provided on the top 481b of the wall 481. Ballast gas with a controlled flow rate is supplied to the gas inlet 484b from the ballast gas supply unit 487. The gas inlet 484b introduces the ballast gas supplied from a ballast gas supply unit 487 into the exhaust flow path 486b.

[0084] The gas inlets 484a and 484b may be openings formed in the wall 481, or may be gas pipes extending through the wall 481 to the inside of the wall 481. The ballast gas is, for example, N 2 , Ar, or other inert gas.

[0085] In the exhaust duct 480, the process gas supplied into the inner pipe 244 passes through the exhaust window 252 and flows into the inside of the wall portion 481. The process gas that flows into the inside of the wall portion 481 is exhausted through either the exhaust port 483a or 483b. At this time, the conductance of the exhaust flow path 486a and the conductance of the exhaust flow path 486b can be controlled by introducing ballast gas into the inside of the wall portion 481 from the gas inlet ports 484a and 484b. This makes it possible to adjust the balance between the flow rate of the process gas exhausted through the exhaust port 483a and the flow rate of the process gas exhausted through the exhaust port 483b. That is, the strength of upward and downward drawing of the process gas flowing through the exhaust window 252 in the exhaust duct 480 can be adjusted. As a result, the flow rate distribution of the process gas in the vertical direction (interface direction) in the inner pipe 244 can be adjusted.

[0086] For example, by increasing the flow rate of the ballast gas introduced from the gas inlet 484a to the exhaust flow path 486a, the flow rate of the process gas exhausted through the exhaust port 483a decreases and the flow rate of the process gas exhausted through the exhaust port 483b increases. Also, by decreasing the flow rate of the ballast gas introduced from the gas inlet 484a to the exhaust flow path 486a, the flow rate of the process gas exhausted through the exhaust port 483a increases and the flow rate of the process gas exhausted through the exhaust port 483b decreases.

[0087] Also, for example, by increasing the flow rate of the ballast gas introduced from the gas inlet 484b to the exhaust passage 486b, the flow rate of the process gas exhausted through the exhaust port 483a increases and the flow rate of the process gas exhausted through the exhaust port 483b decreases. Also, by decreasing the flow rate of the ballast gas introduced from the gas inlet 484b to the exhaust passage 486b, the flow rate of the process gas exhausted through the exhaust port 483a decreases and the flow rate of the process gas exhausted through the exhaust port 483b increases.

[0088] [Analysis results] First, with reference to FIGS. 13 and 14, a description will be given of the results of an analysis by computational fluid dynamics (CFD) (hereinafter referred to as "CFD analysis") in the case where a processing vessel having a single-tube structure is used.

[0089] Figure 13 is a schematic diagram of a model of the processing apparatus used in the analysis, in which (a) is a top view of the processing vessel, and (b) is a view of the exhaust duct as seen from the center of the processing vessel.

[0090] In this analysis, a model of an apparatus corresponding to the processing apparatus 100 of the first embodiment, that is, an apparatus equipped with a processing vessel having a single-tube structure as shown in FIG. 13(a), was used for the analysis. In this analysis, the surface distribution of the mass flow rate of the processing gas was analyzed when the flow rate of the ballast gas introduced from the gas inlets 14a, 14b provided at the bottom of the exhaust duct 13 was changed while the processing gas was supplied from the multiple gas holes 12a of the injector 12 in the processing vessel 11. Note that in this analysis, the exhaust window is formed by multiple exhaust holes 15, and the gas inlets 14a, 14b are provided corresponding to the exhaust ports 16a, 16b provided at the bottom of the exhaust duct 13. In addition, the number of gas holes 12a was 61 (diameter: 0.5 mm), the number of exhaust holes 15 was 61 (diameter: 8.0 mm), and the processing gas was N 2 , ballast gas N 2 It was decided.

[0091] FIG. 14 is a diagram showing an analysis result of the inter-surface distribution of the mass flow rate of the process gas passing through the exhaust hole 15. In FIG. 14, the horizontal axis indicates the slot number (Slot#) of the exhaust hole 15, and the vertical axis indicates the mass flow rate (Mass Flow Rate) [kg / s] of the process gas. The slot number is a number for identifying the exhaust hole 15, and the smaller the slot number, the more the exhaust hole 15 located on the top (TOP) side, and the larger the slot number, the more the exhaust hole 15 located on the bottom (BTM) side. In addition, in FIG. 14, the circle marks indicate the results when the amount of ballast gas introduced from the gas inlet 14a is 0 sccm and the amount of ballast gas introduced from the gas inlet 14b is 250 sccm. The diamond marks indicate the results when the amount of ballast gas introduced from the gas inlet 14a is 0 sccm and the amount of ballast gas introduced from the gas inlet 14b is 0 sccm. The triangular marks indicate the results when the amount of ballast gas introduced from gas inlet 14a was 250 sccm and the amount of ballast gas introduced from gas inlet 14b was 0 sccm.

[0092] As shown in FIG. 14, it can be seen that the distribution of the mass flow rate of the processing gas passing through the exhaust hole 15 changes by changing the amount of ballast gas introduced from the gas introduction port 14a and 14b. Specifically, it can be seen that by setting the amount of ballast gas introduced from the gas introduction port 14a to 0 sccm and the amount of ballast gas introduced from the gas introduction port 14b to 250 sccm, the mass flow rate of the processing gas on the BTM side is significantly larger than that on the TOP side (strong downward trend). It can also be seen that by setting the amount of ballast gas introduced from the gas introduction port 14a to 0 sccm and the amount of ballast gas introduced from the gas introduction port 14b to 0 sccm, the mass flow rate of the processing gas on the BTM side is slightly larger than that on the TOP side (weak downward trend). It can also be seen that by setting the amount of ballast gas introduced from the gas introduction port 14a to 250 sccm and the amount of ballast gas introduced from the gas introduction port 14b to 0 sccm, the mass flow rate of the processing gas on the TOP side is larger than that on the BTM side (upward trend). The above results show that by changing the amount of ballast gas introduced from the gas inlets 14a and 14b, it is possible to selectively realize a downward or upward drawing tendency.

[0093] Next, the results of a CFD analysis performed when a processing vessel having a double-tube structure is used will be described with reference to FIGS.

[0094] 15A and 15B are schematic diagrams of a model of a processing apparatus used in the analysis, in which Fig. 15(a) is a cross-sectional view of the processing apparatus including a processing vessel and an exhaust duct, and Fig. 15(b) is a perspective view of the processing apparatus including a processing vessel and an exhaust duct.

[0095] In this analysis, a model of an apparatus corresponding to the processing apparatus 300 of the third embodiment, that is, an apparatus equipped with a processing vessel having a double-tube structure as shown in FIG. 15(a), was used for the analysis. In this analysis, the surface distribution of the mass flow rate of the processing gas was analyzed when the flow rate of the ballast gas introduced from the gas inlets 24a, 24b provided at the bottom of the exhaust duct 23 was changed while the processing gas was supplied from the multiple gas holes 22a of the distribution injector 22 in the inner tube 21. Note that in this analysis, the exhaust window is formed by multiple exhaust holes 25, and the gas inlets 24a, 24b are provided corresponding to the exhaust ports 26a, 26b provided at the bottom of the exhaust duct 23. In addition, the number of gas holes 22a was 61 (diameter: 0.5 mm), the number of exhaust holes 25 was 61 (diameter: 8.0 mm), and the processing gas was N 2 , ballast gas N 2 It was decided.

[0096] FIG. 16 is a diagram showing an analysis result of the inter-surface distribution of the mass flow rate of the process gas passing through the exhaust hole 25. In FIG. 16, the horizontal axis indicates the slot number (Slot#) of the exhaust hole 25, and the vertical axis indicates the mass flow rate (Mass Flow Rate) [kg / s] of the process gas. The slot number is a number for identifying the exhaust hole 25, and the smaller the slot number, the more the exhaust hole 25 located on the top (TOP) side, and the larger the slot number, the more the exhaust hole 15 located on the bottom (BTM) side. In FIG. 16, the diamond marks indicate the results when the amount of ballast gas introduced from the gas inlet 24a is 0 sccm and the amount of ballast gas introduced from the gas inlet 24b is 0 sccm. The triangle marks indicate the results when the amount of ballast gas introduced from the gas inlet 24a is 250 sccm and the amount of ballast gas introduced from the gas inlet 24b is 0 sccm.

[0097] As shown in FIG. 16, it can be seen that the distribution of the mass flow rate of the processing gas passing through the exhaust hole 25 changes by changing the amount of ballast gas introduced from the gas introduction port 24a and the gas introduction port 24b. Specifically, it can be seen that by setting the amount of ballast gas introduced from the gas introduction port 24a to 0 sccm and the amount of ballast gas introduced from the gas introduction port 24b to 0 sccm, a downward drawing tendency is observed in which the mass flow rate of the processing gas is larger on the BTM side than on the TOP side. In addition, it can be seen that by setting the amount of ballast gas introduced from the gas introduction port 24a to 250 sccm and the amount of ballast gas introduced from the gas introduction port 24b to 0 sccm, a upward drawing tendency is observed in which the mass flow rate of the processing gas is larger on the TOP side than on the BTM side. From the above results, it was shown that the downward drawing and upward drawing tendencies can be selectively realized by changing the amount of ballast gas introduced from the gas introduction ports 24a and 24b.

[0098] In the above embodiment, the gas inlets 184a, 284a, 384a, and 484a are examples of a first gas inlet, and the gas inlets 184b, 284b, 384b, and 484b are examples of a second gas inlet. The exhaust flow paths 186a, 286a, 386a, and 486a are examples of a first exhaust flow path, and the exhaust flow paths 186b, 286b, 386b, and 486b are examples of a second exhaust flow path.

[0099] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0100] 100,200,300,400 Processing Units 121,234 Processing vessel 151,271,272,273 Gas supply pipes 128,252 Exhaust window 180,280,380,480 Exhaust duct 186a, 286a, 386a, 486a Exhaust flow path 186b, 286b, 386b, 486b Exhaust flow passage 184a, 284b, 384a, 484a Gas inlet 184b, 284b, 384b, 484b Gas inlet

Claims

1. a processing vessel having a substantially cylindrical shape and accommodating a plurality of substrates therein at intervals in a longitudinal direction of the processing vessel; a gas supply pipe for supplying a gas into the processing chamber; an exhaust window extending in a longitudinal direction of the processing vessel and configured to exhaust the gas from within the processing vessel; an exhaust duct that forms a first exhaust flow path for exhausting the gas exhausted through the exhaust window from one side in a longitudinal direction of the exhaust window and a second exhaust flow path for exhausting the gas from the other side in the longitudinal direction of the exhaust window; Equipped with The exhaust duct is a first gas introduction section that introduces a ballast gas into the first exhaust flow path; a second gas introduction section that introduces a ballast gas into the second exhaust flow path; having Processing unit.

2. The exhaust window includes a rectangular exhaust slit extending along a longitudinal direction of the processing vessel. The processing device of claim 1 .

3. The exhaust window includes a plurality of exhaust holes spaced apart along a longitudinal direction of the processing vessel. The processing device according to claim 1 or 2.

4. the processing vessel has a single-tube structure, and the exhaust window is formed on an outer wall thereof, The exhaust duct is a wall portion attached to an outer wall of the processing vessel so as to surround the exhaust window; a flow dividing plate provided inside the wall portion and dividing the gas exhausted from the exhaust window into the first exhaust flow path and the second exhaust flow path; having The processing device according to any one of claims 1 to 3.

5. The flow dividing plate is provided parallel to the longitudinal direction of the exhaust window. The processing device according to claim 4 .

6. The flow dividing plate extends upward from the bottom of the wall portion to form a gap between the bottom of the wall portion and the top of the wall portion. The processing device according to claim 5 .

7. the processing vessel has a double-tube structure including an inner tube and an outer tube, the exhaust window is formed on an outer wall of the inner tube, and an exhaust pipe that exhausts the gas between the inner tube and the outer tube is connected to the outer tube, the exhaust duct has a flow dividing plate that divides the gas exhausted from the exhaust window into the first exhaust flow path and the second exhaust flow path. The processing device according to any one of claims 1 to 3.

8. The flow dividing plate is provided parallel to the longitudinal direction of the exhaust window. The processing device of claim 7.

9. The flow dividing plate forms a gap at an upper portion of one of the spaces between the inner pipe and the outer pipe extending from the exhaust window to the exhaust pipe, and forms a gap at a lower portion of the other space. The processing device of claim 8.

10. the processing vessel has a double-tube structure including an inner tube and an outer tube, and the exhaust window is formed on an outer wall of the inner tube, The exhaust duct is a wall portion attached to an outer wall of the inner tube so as to surround the exhaust window; a flow dividing plate provided inside the wall portion and dividing the gas exhausted from the exhaust window into the first exhaust flow path and the second exhaust flow path; having The processing device according to any one of claims 1 to 3.

11. The flow dividing plate is provided parallel to the longitudinal direction of the exhaust window. The processing device of claim 10.

12. The flow dividing plate extends upward from the bottom of the wall portion to form a gap between the bottom of the wall portion and the top of the wall portion. The processing device of claim 11.

13. the wall portion is formed so that the first exhaust passage and the second exhaust passage extend in a circumferential direction of the processing vessel at a lower portion of the wall portion, the first gas introduction section introduces the ballast gas into the extending portion of the first exhaust flow path; The second gas introduction section introduces the ballast gas into the extending portion of the second exhaust flow path. The processing device of claim 12.

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