Gas treatment apparatus and substrate treatment apparatus

Abstract

To reduce the usage of a solution.SOLUTION: A gas treatment apparatus comprises: a duct; a partition plate; and a liquid supply part. The duct comprises therein a flow passage through which gas flows. The partition plate is a partition plate that divides the flow passage into a plurality of spaces and made of a porous material that can transmit gas and hold liquid. The liquid supply part supplies, to the partition plate, a solution that can dissolve an object component contained in the gas. The gas treatment apparatus causes the gas flowing through the flow passage to contact the solution held in the partition plate.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present disclosure relates to a gas processing apparatus and a substrate processing apparatus. [Background technology]

[0002] 2. Description of the Related Art Exhaust gas discharged from a substrate processing apparatus that processes substrates such as semiconductor wafers may contain components of chemicals used in the substrate processing, such as acid components, alkaline components, and organic components.

[0003] Since exhaust gas containing chemical components may have an adverse effect on the environment and human health if it is released into the atmosphere, a removal device called a scrubber that removes chemical components from the exhaust gas is sometimes installed in the exhaust path of the exhaust gas from the substrate processing equipment.

[0004] Patent Document 1 discloses a scrubber that has a housing with a nozzle inside that sprays a dissolving liquid that dissolves chemical components contained in exhaust gas, and removes chemical components from exhaust gas by bringing the dissolving liquid sprayed from the nozzle into contact with the exhaust gas introduced into the inside of the housing. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2010-114307 A Summary of the Invention [Problem to be solved by the invention]

[0006] The present disclosure provides a technique that can reduce the amount of dissolving liquid used. [Means for solving the problem]

[0007] A gas treatment device according to one aspect of the present disclosure includes a duct, a partition plate, and a liquid supply unit. The duct has an internal flow path through which gas passes. The partition plate is a partition plate that divides the flow path into a plurality of spaces, and is formed of a porous material that is permeable to gas and can retain liquid. The liquid supply unit supplies a dissolving liquid capable of dissolving a target component contained in the gas to the partition plate. The gas treatment device then brings the dissolving liquid retained in the partition plate into contact with the gas passing through the flow path. Effect of the Invention

[0008] According to the present disclosure, an effect is achieved in that the amount of dissolving liquid used can be reduced. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment. [Diagram 2] FIG. 2 is a diagram showing the configuration of a processing unit according to the first embodiment. [Diagram 3] FIG. 3 is a diagram showing a configuration of an exhaust path of the processing unit according to the first embodiment. [Figure 4] FIG. 4 is a diagram showing the configuration of the gas treatment device according to the first embodiment. [Diagram 5] FIG. 5 is a diagram showing the configuration of a gas processing apparatus according to the second embodiment. [Figure 6] FIG. 6 is a timing chart showing an example of the operation of each unit in the flow rate adjustment process according to the second embodiment. [Figure 7] FIG. 7 is a diagram showing the configuration of a gas processing apparatus according to the third embodiment. [Figure 8] FIG. 8 is a flowchart illustrating an example of a procedure for a flow rate adjustment process according to the third embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the gas processing apparatus and the substrate processing apparatus disclosed in the present application will be described in detail with reference to the accompanying drawings. Note that the disclosed technology is not limited to the embodiments described below.

[0011] (First embodiment) First, the configuration of a substrate processing system according to a first embodiment will be described with reference to FIG.

[0012] 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment. In the following, to clarify the positional relationship, an X-axis, a Y-axis, and a Z-axis that are perpendicular to each other are defined, and the positive direction of the Z-axis is defined as the vertical upward direction.

[0013] 1, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

[0014] The carry-in / out station 2 includes a carrier placement section 11 and a transport section 12. On the carrier placement section 11, a plurality of carriers C are placed, each of which accommodates a plurality of substrates, in this embodiment, semiconductor wafers (hereinafter referred to as wafers W), in a horizontal state.

[0015] The transfer section 12 is provided adjacent to the carrier placement section 11, and includes therein a substrate transfer device 13 and a transfer section 14. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. The substrate transfer device 13 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and transfers the wafer W between the carrier C and the transfer section 14 using the wafer holding mechanism.

[0016] The processing station 3 is provided adjacent to the transport section 12. The processing station 3 includes a transport section 15 and a plurality of processing units 16. The plurality of processing units 16 are provided side by side on both sides of the transport section 15.

[0017] The transfer section 15 includes a substrate transfer device 17 therein. The substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. The substrate transfer device 17 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and transfers the wafer W between the delivery section 14 and the processing unit 16 using the wafer holding mechanism.

[0018] The processing unit 16 performs a predetermined substrate processing on the wafer W transferred by the substrate transfer device 17 .

[0019] The substrate processing system 1 also includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs for controlling various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading out and executing the programs stored in the storage unit 19.

[0020] Such a program may be recorded in a computer-readable storage medium and installed from that storage medium into the storage unit 19 of the control device 4. Examples of computer-readable storage media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.

[0021] In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 in the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement part 11, and places the taken-out wafer W on the transfer part 14. The wafer W placed on the transfer part 14 is taken out of the transfer part 14 by the substrate transfer device 17 in the processing station 3, and is carried into the processing unit 16.

[0022] The wafer W carried into the processing unit 16 is processed by the processing unit 16, and then carried out of the processing unit 16 by the substrate transfer device 17 and placed on the delivery section 14. Then, the processed wafer W placed on the delivery section 14 is returned to the carrier C of the carrier placement section 11 by the substrate transfer device 13.

[0023] Next, the configuration of the processing unit 16 and the exhaust path of the processing unit 16 will be described with reference to Figures 2 and 3. Figure 2 is a diagram showing the configuration of the processing unit 16 according to the first embodiment.

[0024] As shown in FIG. 2, the processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a processing fluid supply unit 40, and a collection cup 50.

[0025] The chamber 20 accommodates a substrate holding mechanism 30, a processing fluid supply unit 40, and a collection cup 50. An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20. A gas supply source 23 is connected to the FFU 21 via an air supply pipe 22. The FFU 21 supplies gas, which is supplied from the gas supply source 23 via the air supply pipe 22, from the top to the bottom of the chamber 20, thereby forming a downflow in the chamber 20.

[0026] The substrate holding mechanism 30 includes a holding part 31, a support part 32, and a driving part 33. The holding part 31 holds the wafer W horizontally. The support part 32 is a member extending in the vertical direction, and has a base end rotatably supported by the driving part 33, and supports the holding part 31 horizontally at its tip end. The driving part 33 rotates the support part 32 around a vertical axis. The substrate holding mechanism 30 rotates the support part 32 using the driving part 33 to rotate the holding part 31 supported by the support part 32, thereby rotating the wafer W held by the holding part 31.

[0027] The processing fluid supply unit 40 supplies a processing fluid to the wafer W. The processing fluid supply unit 40 is connected to a processing fluid supply source 70.

[0028] Recovery cup 50 is disposed to surround holder 31, and collects the processing liquid scattered from wafer W due to rotation of holder 31. A drainage outlet 51 is formed in the bottom of recovery cup 50. A drainage pipe 52 is connected to drainage outlet 51, and the processing liquid collected by recovery cup 50 is discharged from drainage outlet 51 through drainage pipe 52 to the outside of processing unit 16.

[0029] Further, an exhaust port 53 is formed at the bottom of the collection cup 50, through which the gas supplied from the FFU 21 is exhausted to the outside of the processing unit 16. An exhaust pipe 54 is connected to the exhaust port 53, and the gas supplied from the FFU 21 to the processing unit 16 is exhausted from the exhaust port 53 through the exhaust pipe 54 to the outside of the processing unit 16.

[0030] Here, the gas discharged from the treatment unit 16 (hereinafter referred to as "exhaust gas") may contain components of the treatment fluid supplied from the treatment fluid supply part 40. For example, when the treatment fluid is an acid, alkaline or organic chemical, the exhaust gas may contain an acid component, an alkaline component or an organic component, respectively.

[0031] Examples of acid-based chemicals include DHF (dilute hydrofluoric acid) and BHF (a mixture of hydrofluoric acid and ammonium fluoride). Examples of alkaline-based chemicals include SC1 (a mixture of ammonia, hydrogen peroxide, and water). Examples of organic chemicals include IPA (isopropyl alcohol). Chemicals are not limited to liquids and may be gases.

[0032] Exhaust gas containing the above components may have an adverse effect on the environment and the human body if released into the atmosphere. Therefore, the substrate processing system 1 according to the first embodiment includes a gas processing device 100 (see FIG. 3) that removes target components including at least one of an acid component, an alkaline component, and an organic component from the exhaust gas discharged from the processing unit 16. The gas processing device 100 is provided in an exhaust path included in the substrate processing system 1.

[0033] Fig. 3 is a diagram showing the configuration of an exhaust path of the processing unit 16 according to the first embodiment. As shown in Fig. 3, the substrate processing system 1 according to the first embodiment includes a plurality of exhaust pipes 54. One ends of the plurality of exhaust pipes 54 are connected to exhaust ports 53 of the plurality of processing units 16, and the other ends are connected to a collective exhaust pipe 55.

[0034] As shown in FIG. 3, the gas processing device 100 is provided in a collective exhaust pipe 55. The collective exhaust pipe 55 constitutes a part of an exhaust path provided in the substrate processing system 1, and is provided inside the substrate processing system 1. The gas processing device 100 is also provided inside the substrate processing system 1. The exhaust gas from which the target components have been removed by the gas processing device 100 is exhausted from the substrate processing system 1 through the collective exhaust pipe 55. When the collective exhaust pipe 55 extends outside the substrate processing system 1, the gas processing device 100 may be provided outside the substrate processing system 1. When a plurality of collective exhaust pipes 55 provided in each of a plurality of substrate processing systems 1 are connected to one combined exhaust pipe, the gas processing device 100 may be provided in the combined exhaust pipe.

[0035] Next, the configuration of the gas processing device 100 will be described with reference to Fig. 4. Fig. 4 is a diagram showing the configuration of the gas processing device 100 according to the first embodiment. In Fig. 4, the flow of exhaust gas is indicated by dashed arrows, and the flow of the dissolving liquid is indicated by solid arrows.

[0036] As shown in FIG. 4, the gas processing device 100 includes a first duct 110, a second duct 120, a partition plate 130, a liquid supply section 140, a gas introduction section 150, a gas discharge section 160, a storage tank 170, and a liquid discharge section 180.

[0037] The first duct 110 has a first flow path F1 therein, and the second duct 120 has a second flow path F2 therein. The first duct 110 and the second duct 120 are arranged to extend in the vertical direction (Z-axis direction). The first duct 110 and the second duct 120 may have any shape, such as a cylindrical shape or a square tube shape.

[0038] The gas introduction section 150 connects the upstream exhaust pipe 55a (see FIG. 3) located upstream of the gas processing device 100 in the exhaust pipe 55 to the first duct 110, and introduces the exhaust gas flowing through the upstream exhaust pipe 55a into the first flow path F1. The gas discharge section 160 connects the downstream exhaust pipe 55b (see FIG. 3) located downstream of the gas processing device 100 in the exhaust pipe 55 to the second duct 120, and discharges the exhaust gas that has passed through the second flow path F2 from the second duct 120 to the downstream exhaust pipe 55b. The lower end side of the first duct 110, i.e., the lower part of the first flow path F1, and the lower end side of the second duct 120, i.e., the lower part of the second flow path F2, are connected via a storage tank 170.

[0039] Specifically, the gas introduction section 150 is connected to the upper end side of the first duct 110, and introduces the exhaust gas from the upper end side of the first duct 110 (i.e., the upper part of the first flow path F1) into the first flow path F1. The gas discharge section 160 is connected to the upper end side of the second duct 120, and discharges the exhaust gas from the upper end side of the second duct 120 (i.e., the upper part of the second flow path F2) to the downstream exhaust manifold 55b. Therefore, in the first flow path F1, a flow of exhaust gas from the top to the bottom is formed, in the storage tank 170, a flow of exhaust gas from the lower part of the first flow path F1 to the lower part of the second flow path F2 is formed, and in the second flow path F2, a flow of exhaust gas from the bottom to the top is formed.

[0040] A partition plate 130 is disposed in each of the first flow path F1 of the first duct 110 and the second flow path F2 of the second duct 120. The partition plate 130 divides each of the first flow path F1 and the second flow path F2 into a plurality of spaces S adjacent to each other in the vertical direction.

[0041] The partition plate 130 is a porous member formed of a porous material that is permeable to exhaust gas and capable of retaining liquid. For example, porous ceramics are used as the porous material forming the partition plate 130. The porous ceramics are ceramics that contain at least silicon (Si) and silicon carbide (SiC). The porous ceramics are formed by reinforcing a three-dimensional skeleton made of silicon (Si) with silicon carbide (SiC). The porous ceramics may further contain aluminum nitride or silicon nitride.

[0042] The partition plate 130 is detachably attached to a plurality of attachment positions that allow the size of the plurality of spaces S in each of the first flow path F1 and the second flow path F2 to be adjusted. For example, a plurality of rails extending in the horizontal direction are formed at equal intervals in the vertical direction in the first flow path F1 and the second flow path F2, and the partition plate 130 is detachably attached to a desired rail among the plurality of rails in the first flow path F1 and the second flow path F2. By attaching the partition plate 130 to all the rails in the first flow path F1 and the second flow path F2, the size of the plurality of spaces S becomes the same. By removing the partition plate 130 from some of the rails among all the rails, the size of some of the spaces S can be increased. The size of the plurality of spaces S may be the same or different between the first duct 110 and the second duct 120. Also, the size of the plurality of spaces S may be the same or different in the first duct 110 or the second duct 120.

[0043] At least one liquid supply unit 140 is disposed in each space S. Specifically, the liquid supply unit 140 is disposed above the partition plate 130 in each space S. The liquid supply unit 140 supplies the dissolving liquid toward the partition plate 130 below.

[0044] The liquid supply unit 140 includes a first liquid supply unit 141 and a second liquid supply unit 142 .

[0045] The first liquid supply unit 141 is connected to a dissolving liquid supply source 141b via a supply pipe 141a. A supply equipment group 141c is provided on the supply pipe 141a in correspondence with the first liquid supply unit 141 of each space S. The dissolving liquid supply source 141b supplies, for example, pure water or city water as a dissolving liquid for dissolving the target component contained in the exhaust gas. The dissolving liquid supplied from the dissolving liquid supply source 141b is not limited to pure water or city water, and can be appropriately selected depending on the type of the target component contained in the exhaust gas. The supply equipment group 141c includes, for example, an opening and closing valve for opening and closing the supply pipe 141a, a mass flow controller, and a temperature regulator capable of adjusting the temperature of the dissolving liquid. In addition, for ease of explanation, FIG. 5 only shows the dissolution liquid supply system (supply pipe 141a, dissolution liquid supply source 141b and supply equipment group 141c) on the first duct 110 side, but the dissolution liquid supply system on the second duct 120 side is similar to the dissolution liquid supply system on the first duct 110 side.

[0046] The first liquid supply unit 141 supplies the dissolving liquid supplied from the dissolving liquid supply source 141b to the lower partition plate 130. The dissolving liquid supplied to the partition plate 130 permeates from the upper surface of the partition plate 130 into the porous structure inside the partition plate 130 and is temporarily held by the partition plate 130.

[0047] The second liquid supply unit 142 is connected to the circulating liquid pipe 142a. A pump 142b is provided in the circulating liquid pipe 142a. A supply device group 142c is provided in the circulating liquid pipe 142a in correspondence with the second liquid supply unit 142 of each space S. The circulating liquid pipe 142a is in contact with the used dissolving liquid stored in the storage tank 170, that is, the dissolving liquid containing the target component removed from the exhaust gas. The pump 142b pulls up the dissolving liquid from the storage tank 170 through the circulating liquid pipe 142a and pumps it toward the second liquid supply unit 142. As a result, the dissolving liquid stored in the storage tank 170 is circulated through a circulation path composed of the circulating liquid pipe 142a and the pump 142b. The supply device group 141c includes, for example, an opening and closing valve that opens and closes the circulating liquid pipe 142a, a mass flow controller, and a temperature regulator that can adjust the temperature of the circulating liquid. In addition, for the sake of convenience, FIG. 5 only shows the circulating fluid supply system (circulating fluid pipe 142a and pump 142b) on the first duct 110 side, but the circulating fluid supply system on the second duct 120 side is similar to the circulating fluid supply system on the first duct 110 side.

[0048] The second liquid supply unit 142 supplies the circulating liquid obtained by circulating the dissolving liquid stored in the storage tank 170 through a circulation path to the partition plate 130 below. The circulating liquid supplied to the partition plate 130 permeates from the upper surface of the partition plate 130 into the porous structure inside the partition plate 130 and is temporarily held by the partition plate 130. Hereinafter, the circulating liquid supplied from the second liquid supply unit 142 and the dissolving liquid supplied from the first liquid supply unit 141 may be collectively referred to as the "dissolving liquid" as appropriate.

[0049] The liquid supply unit 140 supplies the dissolution liquid from the upstream side of the first flow path F1 inside the first duct 110 toward the partition plate 130 below, and supplies the dissolution liquid from the downstream side of the second flow path F2 inside the second duct 120 toward the partition plate 130 below. The dissolution liquid supplied inside the first duct 110 and the dissolution liquid supplied inside the second duct 120 are the same type of liquid.

[0050] The reservoir 170 connects the downstream side of the first flow path F1 of the first duct 110 and the upstream side of the second flow path F2 of the second duct 120, and stores the dissolving liquid that drops from the partition plate .

[0051] The liquid discharge unit 180 discharges the dissolving liquid stored in the storage tank 170 from the storage tank 170. A drain pipe 181 is connected to the liquid discharge unit 180, and a valve 182 is provided in the drain pipe 181.

[0052] The gas processing device 100 also includes a liquid amount detector 171. The liquid amount detector 171 is provided in the storage tank 170, and detects the amount of the dissolving liquid stored in the storage tank 170.

[0053] The detection result by the liquid amount detection unit 171 is output to the control unit . In addition, the supply devices 141c and 142c, the pump 142b, and the valve 182 are controlled by the control unit .

[0054] The control unit 18 determines whether or not to execute the supply of circulating liquid from the second liquid supply unit 142 based on the detection result by the liquid volume detection unit 171. When it is determined that the liquid volume detected by the liquid volume detection unit 171, i.e., the liquid volume of the dissolving liquid stored in the storage tank 170, exceeds a predetermined upper limit, the control unit 18 determines to execute the supply of circulating liquid from the second liquid supply unit 142. Then, the control unit 18 controls the supply equipment group 142c and the pump 142b to start the supply of circulating liquid from the second liquid supply unit 142.

[0055] Furthermore, the control unit 18 adjusts the flow rate and temperature of the dissolving liquid and circulating liquid supplied to the partition plate 130 from the first liquid supply unit 141 and the second liquid supply unit 142 for each space S by controlling the supply device groups 141c and 142c.

[0056] Furthermore, the control unit 18 determines whether or not to execute discharge of the dissolving liquid from the liquid discharge unit 180 based on the detection result by the liquid amount detection unit 171. When it is determined that the liquid amount detected by the liquid amount detection unit 171, i.e., the liquid amount of the dissolving liquid stored in the storage tank 170, exceeds a predetermined upper limit, the control unit 18 determines to execute discharge of the dissolving liquid from the liquid discharge unit 180. Then, the control unit 18 opens the valve 132. As a result, the dissolving liquid is discharged from the storage tank 170 by the liquid discharge unit 180, and the dissolving liquid discharged from the storage tank 170 is discharged to the outside through the drain pipe 181.

[0057] Here, it is determined whether or not to supply the circulating liquid or discharge the dissolving liquid based on the detection result by the liquid amount detection unit 171, but the control unit 18 may determine whether or not to supply the circulating liquid or discharge the dissolving liquid based on the detection result by another detection unit. For example, the control unit 18 may determine whether or not to supply the circulating liquid from the second liquid supply unit 142 based on the detection result by a concentration detection unit (not shown) that detects the concentration of the target component contained in the dissolving liquid stored in the storage tank 170. Also, for example, the control unit 18 may determine whether or not to discharge the dissolving liquid from the liquid discharge unit 180 based on the detection result by a concentration detection unit (not shown) that detects the concentration of the target component contained in the dissolving liquid stored in the storage tank 170. Also, the control unit 18 may adjust the flow rate of the circulating liquid supplied from the second liquid supply unit 142 to the partition plate 130 and the flow rate of the dissolving liquid discharged from the liquid discharge unit 180 based on the detection result by the liquid amount detection unit 171 and the concentration detection unit (not shown).

[0058] The gas treatment device 100 is configured as described above, and the exhaust gas introduced from the gas introduction part 150 into the first flow path F1 of the first duct 110 passes through the partition plate 130 and passes through the first flow path F1 from above to below.

[0059] The exhaust gas that has passed through the first flow path F1 is introduced into the second flow path F2 of the second duct 120 via the inside of the storage tank 170, and then passes through the second flow path F2 from bottom to top while permeating the partition plate 130.

[0060] A dissolving liquid is held in the partition plate 130. Therefore, the exhaust gas comes into contact with the dissolving liquid held in the partition plate 130 while passing through the first flow path F1 from above to below while passing through the partition plate 130, or while passing through the second flow path F2 from below to above while passing through the partition plate 130.

[0061] When the exhaust gas comes into contact with the dissolving liquid held on the partition plate 130, the target components contained in the exhaust gas are dissolved in the dissolving liquid. This removes the target components from the exhaust gas. The exhaust gas from which the target components have been removed is discharged by the gas discharge unit 160 from the second flow path F2 of the second duct 120 to the downstream exhaust manifold 55b (see FIG. 3). The dissolving liquid containing the target components removed from the exhaust gas falls from the partition plate 130 and is stored in the storage tank 170, and is then discharged from the storage tank 170 by the liquid discharge unit 180.

[0062] In this way, the gas treatment device 100 retains the dissolving liquid using the partition plate 130 formed from a porous material that is permeable to exhaust gas and can retain liquid, and removes the target components from the exhaust gas by bringing the exhaust gas into contact with the dissolving liquid retained by the partition plate 130.

[0063] The dissolved liquid held by the partition plate 130 tends to remain there temporarily, so compared to a scrubber that constantly sprays the dissolved liquid, the dissolved liquid can be kept in the first duct 110 and the second duct 120 for a longer period of time. Therefore, the gas treatment device 100 can reduce the amount of dissolved liquid used compared to a scrubber.

[0064] As described above, the gas treatment device according to the first embodiment (for example, the gas treatment device 100) includes a duct (for example, the first duct 110, the second duct 120), a partition plate (for example, the partition plate 130), and a liquid supply unit (for example, the liquid supply unit 140). The duct has a flow path (for example, the first flow path F1, the second flow path F2) through which a gas (for example, exhaust gas) passes. The partition plate is a partition plate that divides the flow path into a plurality of spaces (for example, the space S), and is formed of a porous material that is permeable to gas and can retain liquid. The liquid supply unit supplies a dissolving liquid capable of dissolving a target component contained in the gas to the partition plate. Then, the gas treatment device brings the dissolving liquid retained in the partition plate into contact with the gas passing through the flow path. As a result, the gas treatment device according to the first embodiment can reduce the amount of dissolving liquid used.

[0065] In addition, the partition plate according to the first embodiment is detachably attached to a plurality of attachment positions that allow the size of the plurality of spaces in the flow path to be adjusted. Thus, the gas processing device according to the first embodiment allows the size of the plurality of spaces to be freely adjusted.

[0066] The gas treatment device according to the first embodiment also includes a plurality of ducts. The plurality of ducts include a first duct (e.g., first duct 110) having a first flow path (e.g., first flow path F1) through which the gas passes from above to below, and a second duct (e.g., second duct 120) having a second flow path (e.g., second flow path F2) through which the gas passes from below to above. The partition plate is disposed in each of the first flow path and the second flow path, and divides each of the first flow path and the second flow path into a plurality of spaces. The gas treatment device further includes a storage tank (e.g., storage tank 170) that connects the downstream side of the first flow path and the upstream side of the second flow path and stores the dissolving liquid that falls from the partition plate. As a result, according to the gas treatment device according to the first embodiment, the used dissolving liquid stored in the storage tank, i.e., the dissolving liquid containing the target component removed from the exhaust gas, can be reused.

[0067] At least one liquid supply unit according to the first embodiment is disposed in each space. As a result, according to the gas processing device according to the first embodiment, the gas passing through the flow path can be brought into contact with the dissolving liquid held in the partition plate in each space, thereby improving the efficiency of dissolving the target component by the dissolving liquid.

[0068] Furthermore, the liquid supply unit according to the first embodiment supplies the dissolving liquid from the upstream side of the first flow path toward the partition plate inside the first duct, and supplies the dissolving liquid from the downstream side of the second flow path toward the partition plate inside the second duct. As a result, the gas treatment device according to the first embodiment can increase the possibility of contact between the exhaust gas passing through the partition plate and the dissolving liquid supplied from the liquid supply unit, thereby improving the efficiency of dissolving the target component by the dissolving liquid.

[0069] In addition, the dissolving liquid supplied inside the first duct and the dissolving liquid supplied inside the second duct according to the first embodiment are the same type of liquid. As a result, according to the gas treatment device according to the first embodiment, it is possible to remove target components including at least one of acid components, alkaline components, and organic components from the exhaust gas using the same type of dissolving liquid common to the first duct and the second duct.

[0070] Moreover, the liquid supply unit according to the first embodiment has a first liquid supply unit (e.g., first liquid supply unit 141) and a second liquid supply unit (e.g., second liquid supply unit 142). The first liquid supply unit supplies the dissolution liquid supplied from a dissolution liquid supply source (e.g., dissolution liquid supply source 141b) to the partition plate. The second liquid supply unit supplies the circulating liquid obtained by circulating the dissolution liquid stored in the storage tank through a circulation path (e.g., circulating liquid pipe 142a and pump 142b) to the partition plate. As a result, according to the gas processing device according to the first embodiment, the amount of fresh dissolution liquid supplied from the dissolution liquid supply source can be reduced.

[0071] Furthermore, the flow rates and temperatures of the dissolution liquid and circulating liquid supplied to the partition plate from the first liquid supply unit and the second liquid supply unit according to the first embodiment are adjusted for each space. As a result, according to the gas treatment device according to the first embodiment, the flow rates and temperatures of the dissolution liquid and circulating liquid supplied to the partition plate can be adjusted to flow rates and temperatures suitable for removing the target components for each space.

[0072] Moreover, the gas processing device according to the first embodiment further includes a liquid volume detection unit (e.g., liquid volume detection unit 171) and a control unit (e.g., control unit 18). The liquid volume detection unit detects the volume of the dissolution liquid stored in the storage tank. The control unit determines whether or not to execute the supply of circulating liquid from the second liquid supply unit based on the detection result of the liquid volume detection unit. As a result, according to the gas processing device according to the first embodiment, the supply of circulating liquid can be put on hold until the volume of the dissolution liquid stored in the storage tank reaches an appropriate volume, thereby preventing excessive use of circulating liquid.

[0073] The gas treatment device according to the first embodiment further includes a liquid discharge unit that discharges the dissolving liquid stored in the storage tank from the storage tank. The control unit determines whether or not to execute discharge of the dissolving liquid from the liquid discharge unit based on the detection result of the liquid volume detection unit. As a result, according to the gas treatment device according to the first embodiment, discharge of the dissolving liquid can be postponed until the volume of the dissolving liquid stored in the storage tank reaches an appropriate volume, so that the volume of the dissolving liquid to be reused can be secured.

[0074] Moreover, the substrate processing apparatus (e.g., substrate processing system 1) according to the first embodiment includes a plurality of processing sections (e.g., processing units 16), an exhaust path (e.g., collective exhaust pipe 55), and a gas processing apparatus (e.g., gas processing apparatus 100). The plurality of processing sections process substrates (e.g., wafers W) using chemicals (e.g., processing fluids). Gas (e.g., exhaust gas) discharged from the plurality of processing sections flows through the exhaust path. The gas processing apparatus 100 is provided in the exhaust path, and removes target components contained in the gas flowing through the exhaust path from the gas. As a result, according to the substrate processing apparatus according to the first embodiment, clean exhaust gas from which the target components have been removed can be discharged to the outside of the substrate processing apparatus.

[0075] Moreover, the gas treatment device (for example, the gas treatment device 100) according to the first embodiment includes a duct (for example, the first duct 110, the second duct 120), a porous member (for example, the partition plate 130), and a liquid supply unit (for example, the liquid supply unit 140). The duct has a flow path (for example, the first flow path F1, the second flow path F2) through which a gas (for example, exhaust gas) passes. The porous member is disposed in the flow path and is formed of a porous material that is permeable to gas and can retain liquid. The liquid supply unit supplies a dissolving liquid capable of dissolving a target component contained in the gas to the porous member. The porous material forming the porous member is a porous ceramic. Then, the gas treatment device brings the dissolving liquid retained in the porous member into contact with the gas passing through the flow path. As a result, according to the gas treatment device according to the first embodiment, the amount of dissolving liquid used can be reduced while improving the durability of the porous member.

[0076] The porous ceramic according to the first embodiment is a ceramic containing at least silicon (Si) and silicon carbide (SiC). As a result, the gas treatment device according to the first embodiment can maintain the strength of the porous member even when the porous member is thinned, and therefore the durability of the porous member can be further improved.

[0077] Second embodiment Incidentally, in the substrate processing system 1, the operating status of the multiple processing units 16 changes from moment to moment. For example, the number of operating processing units 16, i.e., the number of processing units 16 performing substrate processing using processing fluids, increases or decreases depending on the time period.

[0078] If the flow rate of the dissolving liquid supplied from the liquid supply section 140 to the partition plate 130 were constant regardless of the number of operating processing units 16, there is a risk that more dissolving liquid would be consumed than necessary, for example, during times when the number of operating processing units 16 is decreasing.

[0079] Therefore, the substrate processing system 1 according to the second embodiment performs a flow rate adjustment process to adjust the flow rate of the dissolving liquid supplied from the liquid supply section 140 (the first liquid supply section 141 and the second liquid supply section 142) to the partition plate 130 in accordance with operation information indicating the operating status of the multiple processing units 16.

[0080] Fig. 5 is a diagram showing the configuration of a gas treatment device 100A according to a second embodiment. In Fig. 6, the flow of exhaust gas is indicated by dashed arrows and the flow of cleaning liquid is indicated by solid arrows, as in Fig. 4. In Fig. 6, the same parts as in Fig. 4 are denoted by the same reference numerals.

[0081] The plurality of processing units 16 and the gas processing device 100A of the substrate processing system 1 according to the second embodiment are controlled by a control unit 18A. The flow rate adjustment process described above is performed, for example, according to recipe information 191 stored in a storage unit 19A.

[0082] The recipe information 191 is an example of operation information indicating the operation status of a plurality of processing units 16, and is information including the number of processing units 16 that should be operated for each time period.

[0083] The control unit 18A performs a flow rate adjustment process based on the number of processing units 16 included in the recipe information 191. That is, the control unit 18A adjusts the flow rate of the dissolving liquid supplied from the first liquid supply unit 141 to the partition plate 130 and the flow rate of the circulating liquid supplied from the second liquid supply unit 142 to the partition plate 130 based on the number of processing units 16 included in the recipe information 191.

[0084] Next, the flow rate adjustment process of the dissolving liquid by the control unit 18A will be described with reference to FIG. 6. FIG. 6 is a timing chart showing an example of the operation of each unit in the flow rate adjustment process according to the second embodiment. In FIG. 6, "dissolving liquid flow rate" indicates the movement of the flow rate of the dissolving liquid supplied from the first liquid supply unit 141 to the partition plate 130, and "circulating liquid flow rate" indicates the movement of the flow rate of the circulating liquid supplied from the second liquid supply unit 142 to the partition plate 130. Also, in FIG. 6, "reserved liquid volume" indicates the liquid volume detected by the liquid volume detection unit 171, that is, the movement of the liquid volume of the dissolving liquid stored in the storage tank 170. Also, in FIG. 6, "number of operating units" indicates the number of processing units 16 included in the recipe information 191.

[0085] 6, the preparation process, the flow rate adjustment process, and the standby process are performed in this order. First, the control unit 18A operates the supply device group 141c from time T0 to start the preparation process of supplying the dissolving liquid at the maximum flow rate from the first liquid supply unit 141 to the partition plate 130. This preparation process is a process of storing the dissolving liquid to be reused in the storage tank 170 before the flow rate adjustment process is started.

[0086] Next, at time T1 when the amount of dissolving liquid stored in storage tank 170 reaches a predetermined amount and preparation processing is completed, controller 18A transmits a signal to start supplying processing fluid to processing unit 16 which is to be operated first among multiple processing units 16. As a result, multiple processing units 16 start processing wafer W using processing fluid.

[0087] Furthermore, the control unit 18A starts a flow rate adjustment process from time T1. Specifically, the control unit 18A operates the supply equipment group 141c, 142c and the pump 142b from time T1 to start supply of the dissolving liquid from the liquid supply unit 140 (the first liquid supply unit 141 and the second liquid supply unit 142).

[0088] In the flow rate adjustment process, the control unit 18A first increases the flow rate of the dissolving liquid supplied from the first liquid supply unit 141 and the flow rate of the circulating liquid supplied from the second liquid supply unit 142 as the number of processing units 16 (number of operating units) included in the recipe information 191 increases from time T1.

[0089] The more the supply flow rates of the dissolving liquid and the circulating liquid to the partition plate 130 are increased in accordance with an increase in the number of processing units 16 included in the recipe information 191, i.e., the number of processing units 16 in operation, the more the amount of dissolving liquid held in the partition plate 130 increases. This increases the possibility of contact between the exhaust gas passing through the partition plate 130 and the dissolving liquid held in the partition plate 130, thereby improving the efficiency of dissolving the target component by the dissolving liquid.

[0090] Next, from time T2 when the number of operating units reaches the maximum value, dissolving liquid is supplied from first liquid supply unit 141 to partition plate 130 at the maximum flow rate, and circulating liquid is supplied from second liquid supply unit 142 to partition plate 130 at the maximum flow rate.

[0091] Next, from time T3, which is a predetermined time after time T2, the control unit 18A reduces the flow rate of the dissolving liquid supplied from the first liquid supply unit 141 and the flow rate of the circulating liquid supplied from the second liquid supply unit 142 as the number of operating units decreases.

[0092] During a time period when the number of processing units 16 included in the recipe information 191, i.e., the number of processing units 16 in operation, is decreasing, the components of the processing fluid contained in the exhaust gas are not so numerous. In such a case, it is possible to reduce the supply flow rate of the dissolving liquid and the circulating liquid to the partition plate 130, thereby lowering the dissolving efficiency of the target components by the dissolving liquid. In this way, excessive use of the dissolving liquid can be suppressed, and therefore the amount of dissolving liquid used can be reduced.

[0093] Next, at time T4 when the control unit 18A receives signals from all the processing units 16 indicating that the processing of the wafer W has been completed, the control unit 18A stops the supply equipment group 141c, 142c and the pump 142b to stop the supply of the dissolving liquid from the liquid supply unit 140. Then, the control unit 18A starts a standby process from time T4. This standby process is a process of waiting until the next substrate processing by the multiple processing units 16 starts.

[0094] During this standby process, the supply of the dissolving liquid from the liquid supply unit 140 is stopped, which can reduce the amount of dissolving liquid used.

[0095] In this example, recipe information 191 is information including the number of processing units 16 to be operated for each time period, but the contents of recipe information 191 are not limited to this. Recipe information 191 may be any information indicating the operating status of multiple processing units 16. For example, recipe information 191 may be information including the amount or concentration of target components contained in exhaust gas discharged from multiple processing units 16 for each time period. In this case, control unit 18A adjusts the flow rate of the dissolving liquid supplied from liquid supply unit 140 to partition plate 130 based on the amount or concentration of the target components included in recipe information 191.

[0096] Furthermore, the recipe information 191 may further include the type of the target component in addition to the amount or concentration of the target component. In this case, the control unit 18A may change the type of dissolving liquid supplied from the liquid supply unit 140 to the partition plate 130 based on the type of the target component included in the recipe information 191. This makes it possible to appropriately change the type of dissolving liquid depending on the type of the target component. Furthermore, the control unit 18A may control the supply device group 141c, 142c based on the type of the target component included in the recipe information 191 to adjust the temperature of the dissolving liquid supplied from the liquid supply unit 140 to the partition plate 130. This makes it possible to adjust the temperature of the dissolving liquid to a temperature suitable for the type of the target component.

[0097] As described above, the substrate processing apparatus (e.g., substrate processing system 1) according to the second embodiment includes a plurality of processing sections (e.g., processing units 16), an exhaust path (e.g., collective exhaust pipe 55), a gas processing apparatus (e.g., gas processing apparatus 100A), and a control section (e.g., control section 18A). The plurality of processing sections process a substrate (e.g., wafer W) using a chemical (e.g., processing fluid). Gas (e.g., exhaust gas) discharged from the plurality of processing sections flows through the exhaust path. The gas processing apparatus 100 is provided in the exhaust path and removes target components contained in the gas flowing through the exhaust path from the gas. The control section 18A controls the plurality of processing sections and the gas processing apparatus. The gas processing apparatus includes a duct (e.g., first duct 110, second duct 120), a partition plate (e.g., partition plate 130), and a liquid supply section (e.g., liquid supply section 140). The duct has a flow path (e.g., a first flow path F1, a second flow path F2) through which a gas (e.g., exhaust gas) passes. The partition plate is a partition plate that separates the flow path into a plurality of spaces (e.g., space S), and is made of a porous material that is permeable to gas and can retain liquid. The liquid supply unit supplies a dissolving liquid capable of dissolving a target component contained in the gas to the partition plate. Then, the control unit adjusts the flow rate of the dissolving liquid supplied from the liquid supply unit to the partition plate in accordance with operation information indicating the operation status of the plurality of processing units. As a result, the substrate processing apparatus according to the second embodiment can reduce the amount of dissolving liquid used.

[0098] Moreover, the control unit according to the second embodiment starts the supply of the dissolving liquid from the liquid supply unit at the time (e.g., time T1) when a signal to start the supply of chemicals is sent to the first processing unit to operate among the plurality of processing units. As a result, the substrate processing apparatus according to the second embodiment can start the supply of the dissolving liquid in the gas processing unit in synchronization with the supply of chemicals in the processing unit.

[0099] Furthermore, the control unit according to the second embodiment stops the supply of dissolving liquid from the liquid supply unit when signals indicating that the substrate processing is completed are received from all processing units (e.g., at time T4).Therefore, according to the substrate processing apparatus according to the second embodiment, the supply of dissolving liquid in the gas processing device can be stopped in synchronization with the completion of the substrate processing using chemicals in the processing unit.

[0100] Moreover, the liquid supply unit according to the second embodiment has a first liquid supply unit (e.g., first liquid supply unit 141) and a second liquid supply unit (e.g., second liquid supply unit 142). The first liquid supply unit supplies the dissolving liquid supplied from a dissolving liquid supply source (e.g., dissolving liquid supply source 141b) to the partition plate. The second liquid supply unit supplies the circulating liquid obtained by circulating the dissolving liquid stored in the storage tank through a circulation path (e.g., circulating liquid pipe 142a and pump 142b) to the partition plate. The control unit adjusts the flow rate of the dissolving liquid supplied from the first liquid supply unit to the partition plate and the flow rate of the circulating liquid supplied from the second liquid supply unit to the partition plate according to the operation information.

[0101] Specifically, the operation information according to the second embodiment is recipe information (e.g., recipe information 191) including the number of processing units to be operated for each time period. The control unit adjusts the flow rate of the dissolving liquid supplied from the first liquid supply unit to the partition plate and the flow rate of the circulating liquid supplied from the second liquid supply unit to the partition plate based on the number of processing units included in the recipe information. As a result, the substrate processing apparatus according to the second embodiment can prevent excessive use of the dissolving liquid, thereby reducing the amount of dissolving liquid used.

[0102] Furthermore, the operation information according to the second embodiment may be recipe information including the amount or concentration of a target component contained in the gas discharged from each of the plurality of processing units for each time period. In this case, the control unit may adjust the flow rate of the dissolving liquid supplied from the liquid supply unit to the partition plate based on the amount or concentration of the target component included in the recipe information. As a result, the substrate processing apparatus according to the second embodiment can prevent excessive use of the dissolving liquid, thereby reducing the amount of dissolving liquid used.

[0103] Furthermore, the recipe information according to the second embodiment may further include the type of the target component. In this case, the control unit may change the type of dissolving liquid supplied from the liquid supply unit to the partition plate based on the type of the target component included in the recipe information. In this way, the substrate processing apparatus according to the second embodiment can appropriately change the type of dissolving liquid according to the type of the target component.

[0104] Furthermore, the control unit according to the second embodiment may adjust the temperature of the dissolving liquid supplied from the liquid supply unit to the partition plate based on the type of the target component included in the recipe information. In this way, the substrate processing apparatus according to the second embodiment can adjust the temperature of the dissolving liquid to a temperature suitable for the type of the target component.

[0105] (Third embodiment) The substrate processing system 1 according to the third embodiment differs from the substrate processing system 1 according to the second embodiment in that a flow rate adjustment process is performed based on the detection results of a concentration detection unit that detects the concentration of a target component contained in the exhaust gas.

[0106] Fig. 7 is a diagram showing the configuration of a gas treatment device 100B according to a third embodiment. In Fig. 7, the flow of exhaust gas is indicated by dashed arrows and the flow of cleaning liquid is indicated by solid arrows, as in Fig. 5. In Fig. 7, the same parts as in Fig. 5 are denoted by the same reference numerals.

[0107] The plurality of processing units 16 and the gas processing device 100B of the substrate processing system 1 according to the third embodiment are controlled by a controller 18B.

[0108] The gas treatment device 100B according to the third embodiment includes a first concentration detection unit 151 and a second concentration detection unit 161. The first concentration detection unit 151 is provided in the gas introduction unit 150 and detects the concentration of a target component contained in the exhaust gas introduced into the first flow path F1 of the first duct 110 by the gas introduction unit 150. The second concentration detection unit 161 is provided in the gas discharge unit 160 and detects the concentration of a target component contained in the exhaust gas discharged from the second flow path F2 of the second duct 120 by the gas discharge unit 160.

[0109] The detection results by the first concentration detection section 151 and the second concentration detection section 161 are output to the control section 18B.

[0110] The control unit 18B monitors the detection results by the first concentration detection unit 151 and the second concentration detection unit 161 as operation information indicating the operation status of the multiple processing units 16, and performs a flow rate adjustment process based on the detection results by the first concentration detection unit 151 and the second concentration detection unit 161. That is, the control unit 18B adjusts the flow rate of the dissolving liquid supplied from the first liquid supply unit 141 to the partition plate 130 and the flow rate of the circulating liquid supplied from the second liquid supply unit 142 to the partition plate 130 based on the detection results by the first concentration detection unit 151 and the second concentration detection unit 161.

[0111] Next, the flow rate adjustment process of the dissolving liquid by the control unit 18B will be described with reference to Fig. 8. Fig. 8 is a flowchart showing an example of the procedure of the flow rate adjustment process according to the third embodiment.

[0112] 8, the control unit 18B determines whether or not the concentration detected by the second concentration detection unit 161, i.e., the concentration of the target component contained in the exhaust gas flowing through the gas discharge unit 160, exceeds a predetermined upper limit (step S101). When it is determined that the concentration detected by the second concentration detection unit 161 exceeds the predetermined upper limit (step S101; Yes), the control unit 18B performs the following process. That is, the control unit 18B controls the supply equipment group 141c, 142c to increase the flow rate of the dissolving liquid supplied from the first liquid supply unit 141 to the partition plate 130 and the flow rate of the circulating liquid supplied from the second liquid supply unit 142 to the partition plate 130 (step S102).

[0113] The more the supply flow rates of the dissolving liquid and the circulating liquid to the partition plate 130 are increased, the more the amount of dissolving liquid held in the partition plate 130 increases. This increases the possibility of contact between the exhaust gas passing through the partition plate 130 and the dissolving liquid held in the partition plate 130, thereby improving the efficiency of dissolving the target component by the dissolving liquid. As a result, the concentration of the target component contained in the exhaust gas discharged from the gas discharge portion 160 can be reduced.

[0114] On the other hand, when the concentration detected by the second concentration detection unit 161 does not exceed the predetermined upper limit (step S101; No), the control unit 18B judges whether the concentration detected by the second concentration detection unit 161 is below the predetermined lower limit (step S103). When the concentration detected by the second concentration detection unit 161 is judged to be below the predetermined lower limit (step S103; Yes), the control unit 18B performs the following process. That is, the control unit 18B controls the supply device group 141c, 142c to reduce the flow rate of the dissolving liquid supplied from the first liquid supply unit 141 to the partition plate 130 and the flow rate of the circulating liquid supplied from the second liquid supply unit 142 to the partition plate 130 (step S104).

[0115] When the processes of steps S102 and S104 are completed, or when the concentration detected by the second concentration detection unit 161 in step S103 is not below the predetermined lower limit (step S103; No), the control unit 18B returns the process to step S101. As a result, the processes of steps S101 to S104 are repeated.

[0116] If the concentration detected by the second concentration detector 161 is below a predetermined lower limit, it means that the target component has been removed from the exhaust gas more than necessary. In such a case, the flow rate of the dissolving liquid and the flow rate of the circulating liquid may be reduced to lower the efficiency of dissolving the target component by the dissolving liquid. In this way, excessive use of the dissolving liquid can be suppressed.

[0117] Although the flow rate is adjusted based on the detection result of the second concentration detection unit 161 here, the control unit 18B may perform the flow rate adjustment process of steps S101 to S104 based on the detection result of the first concentration detection unit 151. The control unit 18B may also perform the flow rate adjustment process of steps S101 to S104 based on the concentration detected by a third concentration detection unit (not shown) that detects the concentration of a target component contained in the exhaust gas passing through the first flow path F1 of the first duct 110 or the second flow path F2 of the second duct 120.

[0118] Furthermore, the control unit 18B may determine whether the concentration detected by the first concentration detection unit 151 or the second concentration detection unit 161 exceeds a threshold value that is greater than a predetermined upper limit value. When the control unit 18B determines that the concentration detected by the first concentration detection unit 151 or the second concentration detection unit 161 exceeds the threshold value, the control unit 18B may perform control to reduce the flow rate of the exhaust gas discharged from the multiple processing units 16. For example, the control may be to limit the processing units 16 that operate, that is, the processing units 16 that perform substrate processing using a processing fluid. For example, the control may be to stop the wafers W corresponding to the next lot of the lot including the wafers W being processed in the processing unit 16 from being unloaded from the carrier C. By performing control to reduce the flow rate of the exhaust gas discharged from the multiple processing units 16, the concentration of the target component contained in the exhaust gas introduced from the gas introduction unit 150 can be reduced.

[0119] As described above, the gas processing apparatus (for example, gas processing apparatus 100B) of the substrate processing apparatus (for example, substrate processing system 1) according to the third embodiment includes a concentration detection unit (for example, first concentration detection unit 151, second concentration detection unit 161). The concentration detection unit detects the concentration of a target component contained in a gas (for example, exhaust gas). Then, the control unit (for example, control unit 18B) according to the third embodiment monitors the detection result of the concentration detection unit as operation information. Based on the detection result of the concentration detection unit, the control unit adjusts the flow rate of the dissolving liquid supplied from the first liquid supply unit (for example, first liquid supply unit 141) to the partition plate (for example, partition plate 130) and the flow rate of the circulating liquid supplied from the second liquid supply unit (for example, second liquid supply unit 142) to the partition plate. As a result, according to the substrate processing apparatus according to the third embodiment, excessive use of the dissolving liquid can be suppressed, and therefore the amount of dissolving liquid used can be reduced.

[0120] (others) In each of the above embodiments, the first duct 110 and the second duct 120 are arranged to extend in the vertical direction (Z-axis direction), but the arrangement of the first duct 110 and the second duct 120 is not limited to this. For example, the first duct 110 and the second duct 120 may be arranged to be inclined with respect to the vertical direction (Z-axis direction).

[0121] In addition, in each of the above embodiments, the storage tank 170 is described as storing the dissolving liquid dropping from the partition plate 130 arranged in each of the first flow path F1 of the first duct 110 and the second flow path F2 of the second duct 120. However, the storage tank 170 may be divided for each duct. For example, the storage tank 170 may be divided into a first storage section corresponding to the first duct 110 and a second storage section corresponding to the second duct 120 by a partition wall. In this case, the first storage section stores the dissolving liquid dropping from the partition plate 130 arranged in the first flow path F1 of the first duct 110, and the second storage section stores the dissolving liquid dropping from the second flow path F2 of the second duct 120. Furthermore, when the storage tank 170 is divided into a first storage section and a second storage section by a partition wall, different types of dissolving liquid may be supplied from the liquid supply section 140 to the inside of the first duct 110 and the inside of the second duct 120.

[0122] In the second and third embodiments, the flow rate of the dissolving liquid is adjusted in accordance with the operation information, but the number of liquid supplying units 140 that supply the dissolving liquid to the partition plate 130 among the multiple liquid supplying units 140 may be increased or decreased in accordance with the operation information. For example, the control unit 18A may control the supply device groups 141c and 142c to reduce the number of liquid supplying units 140 that supply the dissolving liquid to the partition plate 130 as the number of processing units 16 included in the recipe information 191, i.e., the number of processing units 16 in operation, decreases. This makes it possible to reduce the amount of dissolving liquid used.

[0123] Furthermore, in the second and third embodiments, the number of liquid supply parts 140 that supply the dissolving liquid to the partition plate 130 may be increased or decreased according to lot identification information that identifies a lot including a wafer W to be processed in the processing unit 16. For example, the control part 18A may control the supply equipment groups 141c, 142c to reduce the number of liquid supply parts 140 that supply the dissolving liquid to the partition plate 130 during a period in which the wafer W included in the lot identified by the lot identification information is not removed from the carrier C. This can reduce the amount of dissolving liquid used.

[0124] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0125] 1. Substrate Processing System 16 Processing Unit 18, 18A, 18B Control section 19, 19A Storage section 55 Collector exhaust pipe 100, 100A, 100B Gas treatment device 110 First Duct 120 Second Duct 130 Partition 140 Liquid supply section 141 1st liquid supply section 142 Second liquid supply section 150 Gas introduction section 151 First concentration detection unit 160 Gas exhaust section 161 Second concentration detection unit 170 Reservoir 171 Liquid volume detector 180 Liquid discharge part 191 Recipe Information F1 First flow path F2 Second flow path S space

Claims

1. A duct having an internal flow path through which a gas passes; a partition plate that divides the flow path into a plurality of spaces, the partition plate being made of a porous material that is permeable to the gas and capable of retaining a liquid; a liquid supply unit that supplies a dissolving liquid capable of dissolving a target component contained in the gas to the partition plate; a storage tank for storing the dissolving liquid dropping from the partition plate; Equipped with bringing the gas passing through the flow path into contact with the dissolution liquid held by the partition plate; At least one liquid supply unit is disposed in each of the spaces, The liquid supply unit includes: a first liquid supply unit that supplies the dissolving liquid supplied from a dissolving liquid supply source to the partition plate in each of the spaces; a second liquid supply unit that supplies a circulating liquid obtained by circulating the dissolving liquid stored in the storage tank through a circulation path to the partition plate in each of the spaces; A gas treatment device comprising:

2. The gas treatment device according to claim 1 , wherein the partition plate is detachably attached to a plurality of attachment positions that allow adjustment of sizes of the plurality of spaces in the flow path.

3. A plurality of said ducts are provided, The plurality of ducts include a first duct having a first flow passage therein through which the gas passes from above to below; a second duct having a second flow passage therein through which the gas passes from below to above; Including, the partition plates are disposed in the first flow path and the second flow path, respectively, and partition the first flow path and the second flow path into a plurality of spaces; The gas treatment device according to claim 1 , wherein the storage tank connects a downstream side of the first flow path and an upstream side of the second flow path.

4. The gas processing device of claim 3, wherein the liquid supply unit supplies the dissolution liquid from the upstream side of the first flow path toward the partition plate inside the first duct, and supplies the dissolution liquid from the downstream side of the second flow path toward the partition plate inside the second duct.

5. The gas treatment device according to claim 4 , wherein the dissolving liquid supplied inside the first duct and the dissolving liquid supplied inside the second duct are the same type of liquid.

6. 2 . The gas treatment device according to claim 1 , wherein a flow rate and a temperature of the dissolving liquid and the circulating liquid supplied to the partition plate from the first liquid supply section and the second liquid supply section are adjusted for each space.

7. a liquid amount detection unit that detects the amount of the dissolving liquid stored in the storage tank; a control unit that determines whether or not to supply the circulating fluid from the second fluid supply unit based on a detection result of the fluid amount detection unit; The gas treatment apparatus of claim 1 further comprising:

8. The liquid discharging device further includes a liquid discharging unit that discharges the dissolving liquid stored in the storage tank from the storage tank, The gas treatment device according to claim 7 , wherein the control unit determines whether or not to execute discharge of the dissolution liquid from the liquid discharge unit based on a detection result of the liquid amount detection unit.

9. a concentration detection unit that detects a concentration of the target component contained in the dissolution liquid stored in the storage tank; a control unit that determines whether or not to supply the circulating fluid from the second fluid supply unit based on a detection result of the concentration detection unit; The gas treatment apparatus of claim 1 further comprising:

10. The liquid discharging device further includes a liquid discharging unit that discharges the dissolving liquid stored in the storage tank from the storage tank, The gas treatment device according to claim 9 , wherein the control unit determines whether or not to execute discharge of the dissolution liquid from the liquid discharge unit based on a detection result of the concentration detection unit.

11. A duct having an internal flow path through which a gas passes, a partition plate that divides the flow path into a plurality of spaces, the partition plate being made of a porous material that is permeable to the gas and capable of retaining a liquid; a liquid supply unit that supplies a dissolving liquid capable of dissolving a target component contained in the gas to the partition plate; Equipped with bringing the gas passing through the flow path into contact with the dissolution liquid held by the partition plate; The partition plate is detachably attached to a plurality of attachment positions that allow adjustment of sizes of the plurality of spaces in the flow path.

12. A plurality of processing sections for processing substrates using chemicals; an exhaust path through which gas exhausted from the plurality of processing units flows; a gas treatment device provided in the exhaust path and configured to remove target components contained in the gas flowing through the exhaust path from the gas; Equipped with The gas treatment device includes: a duct having an internal flow path through which the gas passes; a partition plate that divides the flow path into a plurality of spaces, the partition plate being made of a porous material that is permeable to the gas and capable of retaining a liquid; a liquid supply unit that supplies a dissolving liquid capable of dissolving a target component contained in the gas to the partition plate; a storage tank for storing the dissolving liquid dropping from the partition plate; Equipped with bringing the gas passing through the flow path into contact with the dissolution liquid held by the partition plate; At least one liquid supply unit is disposed in each of the spaces, The liquid supply unit includes: a first liquid supply unit that supplies the dissolving liquid supplied from a dissolving liquid supply source to the partition plate in each of the spaces; a second liquid supply unit that supplies a circulating liquid obtained by circulating the dissolving liquid stored in the storage tank through a circulation path to the partition plate in each of the spaces; The substrate processing apparatus includes:

13. A duct having an internal flow path through which a gas passes; a porous member disposed in the flow path and formed of a porous material that is permeable to the gas and capable of retaining a liquid; a liquid supply unit that supplies a dissolving liquid capable of dissolving a target component contained in the gas to the porous member; a storage tank for storing the dissolution liquid dropping from the porous member; Equipped with The porous material forming the porous member is a porous ceramic, bringing the gas passing through the flow path into contact with the dissolution liquid held in the porous member; The porous member divides the flow path into a plurality of spaces, At least one liquid supply unit is disposed in each of the spaces, The liquid supply unit includes: a first liquid supply unit that supplies the dissolving liquid supplied from a dissolving liquid supply source to the porous member in each of the spaces; a second liquid supply unit that supplies a circulating liquid obtained by circulating the dissolving liquid stored in the storage tank through a circulation path to the porous member in each of the spaces; A gas treatment device comprising:

14. The gas treatment device according to claim 13 , wherein the porous ceramic is a ceramic containing at least silicon (Si) and silicon carbide (SiC).

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