External substrate rotation in semiconductor processing systems

Abstract

To provide an improved apparatus and method for film uniformity in semiconductor processing.SOLUTION: A processing system 100 for semiconductor processing, as a processing chamber, includes two transfer chambers 104a, 104b, a rotation module 106, a processing chamber 108, and a load lock chamber 110 to form a vacuum tight platform 116. The processing chamber is coupled to the transfer chamber. The rotation module is positioned between the transfer chambers to rotate a substrate. The transfer chambers transfer the substrate between the processing chamber and the transfer chamber.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates generally to methods and apparatus for film uniformity in semiconductor processing, and more particularly to a processing system having a rotation module coupled between two transfer chambers to increase film uniformity in semiconductor processing. [Background technology]

[0002]

[0002] The performance of a semiconductor device is determined by a variety of factors. One important factor is the uniformity of the film deposited on the substrate. It is desirable to deposit the film uniformly so that the thickness variation across the surface of the substrate is minimal. For example, it may be desirable to form a film having a thickness variation of less than about 5% across the surface of the substrate.

[0003]

[0003] However, film uniformity can be adversely affected by several factors including heater temperature, chamber geometry, process gas flow non-uniformity, plasma non-uniformity, etc. These factors can result in non-uniform film deposition on the surface of the substrate, ultimately degrading device performance.

[0004]

[0004] Rotating the substrate during processing improves uniformity, however, requiring expensive equipment such as slip rings and rotary unions.

[0005] Therefore, there is a need for improved apparatus and methods for film uniformity in semiconductor processing. Summary of the Invention

[0006] In one embodiment, a semiconductor processing system is disclosed herein. The processing system includes two transfer chambers, a processing chamber, and a rotation module. The processing chamber is coupled to one of the two transfer chambers. The rotation module is disposed between the transfer chambers. The rotation module is configured to rotate a substrate.

[0007]

[0007] In another embodiment, a method of processing a substrate is disclosed herein. The method includes depositing a first portion of a film on a substrate in a processing chamber. The method includes transferring the substrate to a rotation module. The method includes rotating the substrate a predetermined amount. The method includes returning the substrate into the processing chamber. The method includes depositing a second portion of the film on the substrate.

[0008] In another embodiment, a semiconductor processing system is disclosed herein. The processing system includes a transfer chamber, a processing chamber, and a rotation module. The processing chamber is coupled to two transfer chambers. The rotation module is coupled to the transfer chamber. The rotation module is configured to rotate a substrate while a portion of the substrate remains within the transfer chamber.

[0009]

[0009] In order that the above-mentioned features of the present disclosure may be understood in detail, a more detailed description of the present disclosure briefly summarized above may be obtained by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only representative embodiments of the present disclosure and therefore should not be considered as limiting the scope of the disclosure, which may admit of other equally effective embodiments. [Brief description of the drawings]

[0010] [Figure 1] 1 illustrates a top view of a processing system including at least one rotation module, according to one embodiment. [Diagram 2] 2 illustrates a side view of the rotation module of FIG. 1 according to one embodiment. [Diagram 3]2 illustrates a side view of another embodiment of a rotating module portion of the processing system of FIG. 1, according to one embodiment. [Figure 4] 1 illustrates a method for processing a substrate, according to one embodiment. [Figure 5A] 2 illustrates a side view of the rotation module of FIG. 1 showing how a substrate is placed on a substrate support assembly according to one embodiment. [Figure 5B] 2 illustrates a side view of the rotation module of FIG. 1 showing how a substrate is placed on a substrate support assembly according to one embodiment. [Figure 5C] 2 illustrates a side view of the rotation module of FIG. 1 showing how a substrate is placed on a substrate support assembly according to one embodiment. [Figure 6] 1 illustrates a top view of a processing system having a rotation module, according to one embodiment. [Figure 7] 1 illustrates a top view of a processing system having a rotation module, according to one embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011]

[0017] For clarity, where applicable, the same reference numbers have been used to designate identical elements common to the figures. In addition, elements of one embodiment may be advantageously adapted for use with other embodiments described herein.

[0012]

[0018] 1 shows a schematic diagram of a processing system 100 for processing substrates (not shown). The processing system 100 includes two transfer chambers 104a, 104b, a rotation module 106, and one or more processing chambers 108. The processing system 100 may include a load lock chamber 110, a factory interface 112, and a controller 113. The factory interface 112 is configured to load and unload substrates from the processing system 100. The factory interface 112 may include various robots and load ports adapted to load substrates to be processed and store processed substrates.

[0013]

[0019] A load lock chamber 110 couples the transfer chamber 104a to a factory interface 112. The load lock chamber 110 is selectively fluidly connected to the transfer chamber 104a such that substrates may be transferred between the atmospheric environment of the factory interface 112 and the load lock chamber 110. The transfer chamber 104a includes a robot 114a. The robot 114a is configured to transfer substrates into and out of the chambers 106, 108. The transfer chamber 104b includes a robot 114b. The robot 114b is configured to transfer substrates into and out of the chambers 106, 108.

[0014]

[0020] The processing chambers 108 are coupled to the transfer chambers 104a, 104b. In one embodiment, the processing chambers 108 can be deposition or treatment chambers. Examples of suitable deposition chambers include, but are not limited to, chemical vapor deposition (CVD) chambers, spin-on coating chambers, flowable CVD chambers, physical vapor deposition (PVD) chambers, atomic layer deposition (ALD) chambers, epitaxial deposition chambers, and the like. Examples of treatment chambers include, but are not limited to, thermal treatment chambers, annealing chambers, rapid thermal annealing chambers, laser treatment chambers, electron beam treatment chambers, UV treatment chambers, ion beam implantation chambers, ion immersion implantation chambers, and the like. It is contemplated that one or more of the processing chambers 108 can be other types of vacuum processing chambers.

[0015]

[0021] A rotation module 106 is coupled to the transfer chambers 104a, 104b. The rotation module 106 separates the transfer chamber 104a from the transfer chamber 104b. The rotation module 106 allows fluid communication between the transfer chambers 104a, 104b such that a substrate being transferred from the transfer chamber 104a to the transfer chamber 104b passes through the rotation module 106. The rotation module 106 is configured to rotate the substrate. The rotation module 106 is discussed in more detail in FIG. 2.

[0016]

[0022] Continuing with reference to FIG. 1 , the processing chamber 108, the rotation module 106, the transfer chambers 104a, 104b, and the load lock chamber 110 are connected to form a vacuum tight platform 116. One or more pumping systems 118 are coupled to the load lock chamber 110, the transfer chambers 104a, 104b, the rotation module 106, and the processing chambers 108. In FIG. 1 , only one pumping system 118 is shown coupled to the load lock chamber 110 to avoid cluttering the drawing. The pumping system 118 controls the pressure within the processing system 100. The pumping system 118 can be utilized to pump down and vent the load lock chamber 110 as needed to facilitate the loading and unloading of substrates into and out of the vacuum tight platform 116.

[0017]

[0023] The processing system 100 is connected to a controller 113 by a communication cable 120. The controller 113 serves to control the processing of substrates within the processing system 100. The controller 113 includes a programmable central processing unit (CPU) 122 operable with a memory 124 and mass storage device, input controls, and a display device (not shown), such as power supplies, clocks, cache, input / output (I / O) circuits, etc., and is coupled to various components of the processing system 100 to facilitate control of the process of processing the substrates. The controller 113 may also include hardware for monitoring the processing of the substrates through sensors (not shown) within the processing system 100.

[0018]

[0024] To facilitate control of the processing system 100 and processing of substrates, the CPU 122 may be one of any form of general purpose computer processor for controlling substrate processing. A memory 124 is coupled to the CPU 122 and may be non-transitory and may be one or more of readily available memory such as random access memory (RAM), read only memory (ROM), a floppy disk drive, a hard disk, or any other form of local or remote digital storage. Support circuits 126 are coupled to the CPU 122 for supporting the CPU 122 in a conventional manner. Processes for processing substrates are typically stored in the memory 124. Processes for processing substrates may also be stored and / or executed by a second CPU (not shown) located remote from the hardware controlled by the CPU 122.

[0019]

[0025] The memory 124 is in the form of a computer-readable storage medium that stores instructions that, when executed by the CPU 122, facilitate processing a substrate in the processing system 100. The instructions in the memory 124 are in the form of a program product, such as a program that performs the processing of a substrate. The program code may conform to any one of several different programming languages. In one example, the present disclosure may be implemented as a program product stored in a computer-readable storage medium for use with a computer system. The program(s) of the program product define the functionality of the embodiment. Exemplary computer-readable storage media include, but are not limited to, (i) non-writable storage media in which information is permanently stored (e.g., a read-only memory device inside a computer, such as a CD-ROM disk readable by a CD-ROM drive, a flash memory, a ROM chip, or any type of solid-state non-volatile semiconductor memory) and (ii) writable storage media in which changeable information is stored (e.g., a floppy disk or a hard disk drive inside a diskette drive, or any type of solid-state random access semiconductor memory). Such computer-readable storage media, when carrying computer-readable instructions that direct the functions of the methods described herein, are embodiments of the present disclosure.

[0020]

[0026] 2 illustrates one embodiment of the rotation module 106. The rotation module 106 includes a chamber body 202 and a substrate support assembly 212. The chamber body 202 includes a sidewall 204, a ceiling 206, and a bottom 208. The sidewall 204, the ceiling 206, and the bottom 208 define an interior volume 210. The substrate support assembly 212 is disposed within the interior volume 210. The substrate support assembly 212 includes a platform 290, a shaft 216, and a rotation actuator 218. The platform 290 has a substrate receiving surface 214 configured to receive a substrate. The shaft 216 extends through an opening 224 and through the bottom 208 of the chamber body 202. The opening 224 is sealed by a bellows 226. A plate 294 is coupled to the bellows 226 and surrounds the shaft 216. The shaft seal 292 is a sliding seal that provides a vacuum-tight coupling between the plate 294 and the shaft 216 during operation of the shaft. The shaft 216 is coupled to the platform 290. In one embodiment, the substrate support assembly 212 further includes a plurality of lift pins 222. The plurality of lift pins 222 extend through the substrate receiving surface 214 and are configured to raise and / or lower the substrate and facilitate robotic transfer.

[0021]

[0027] The rotational actuator 218 may be a stepper motor, a servo motor, etc. In one embodiment, the substrate support assembly 212 further includes a rotational sensor 223. The rotational actuator 218 is coupled to the shaft 216 of the substrate support assembly 212. The rotational actuator 218 may be configured to rotate the substrate support assembly 212. The rotational sensor 223 is coupled to the rotational actuator 218. The rotational sensor is configured to measure the rotation of the substrate support assembly 212. The rotational sensor 223 may be connected to a controller (not shown) and provide real-time feedback to the controller. In one embodiment, the rotational sensor 223 may be an encoder.

[0022]

[0028] In one embodiment, the substrate support assembly 212 further includes a vertical actuator 220. The vertical actuator 220 is configured to move the shaft 216 vertically in the Z direction, thereby raising and / or lowering the platform 290. In Figure 2, the platform 290 is shown in a raised position.

[0023]

[0029] A measurement device 228 is coupled to the ceiling 206 of the rotation module 106. In one embodiment, the measurement device 228 may be an ellipsometry device configured to detect the dielectric properties of the film deposited on the substrate through a window 230 formed in the ceiling 206 of the chamber body 202. The dynamic metrology can provide real-time feedback on the effectiveness of substrate rotation on film property uniformity.

[0024]

[0030] 2, the substrate support assembly 212 is entirely within the interior volume 210 of the rotation module 106. The substrate support assembly 212 does not extend into either the interior volume 280 of the first transfer chamber 104a or the interior volume 282 of the second transfer chamber 104b.

[0025]

[0031] FIG. 3 illustrates a side view of a portion of the processing system 100 of FIG. 1, according to one embodiment. FIG. 3 includes a first transfer chamber 104a, a second transfer chamber 104b, and a rotation module 106. The rotation module 106 is coupled to both the first transfer chamber 104a and the second transfer chamber 104b. The rotation module 106 allows for a fluid connection between the first transfer chamber 104a and the second transfer chamber 104b, such that a substrate can be transferred between the first transfer chamber 104a and the second transfer chamber 104b. In the embodiment illustrated in FIG. 3, the substrate support assembly 212 is not entirely within the interior volume 210 of the rotation module 106. Instead, the substrate support assembly 212 extends partially into the interior volume 280 of the first transfer chamber 104a and the interior volume 282 of the second transfer chamber 104b. For example, a platform 290 may extend into the transfer chambers 104a, 104b. 2. Thus, in the embodiment shown in FIG. 3, the rotation module 106 has an interior volume 210 that is smaller than the interior volume 210 of the rotation module 106 shown in FIG.

[0026]

[0032] FIG. 4 illustrates a method 400 of processing a substrate in a processing system 100 as described in FIG. 1. The method 400 begins in block 402 by performing a first portion of a film deposition process on the substrate in a first processing chamber 108. The substrate is transferred to the first processing chamber 108 by a robot 114a disposed in a first transfer chamber 104a. The robot 114a is configured to move the substrate between the transfer chamber 104a and the processing chamber 108. The robot 114a transfers the substrate from the load lock chamber 110 into the first transfer chamber 104a. The first processing chamber 108 may be a deposition chamber, such as a CVD chamber, a spin-on coating chamber, a flowable CVD chamber, a PVD chamber, and an ALD chamber, or any other deposition chamber suitable for depositing a thin film on a substrate. In the first processing chamber 108, a first portion of a film deposition process is performed on the substrate.

[0027]

[0033] At block 404, as illustrated by Figures 5A-5B, the substrate is transferred from the first processing chamber 108 to the rotation module 106. Figures 5A-5B show the rotation module 106 at block 404 of the method 400. Figure 5A shows the rotation module 106 when the robot is positioning the substrate 501 on the substrate support assembly 212. The vertical actuator 220 actuates the substrate support assembly 212 downward in the Z direction, allowing the robot 114a to place the substrate 501 on the substrate support assembly 212. The substrate lift pins 222 are formed through the platform 290 of the support assembly 212. When the substrate support assembly 212 is lowered, the lift pins 222 are actuated upward in the Z direction to extend above the substrate receiving surface 214. In the lowered position, the lift pins 222 contact the bottom 208 of the chamber body 202. As a result, the lift pins 222 extend above the substrate receiving surface 214. A robot blade 550 from the robot 114a extends from the transfer chamber 104a through the opening and positions the substrate 501 in the interior volume 210. Actuating the lift pins 222 allows the substrate receiving surface 214 to receive the substrate 501 from the robot blade 550 without obstructing the path of the robot blade 550. When the blade is removed from under the substrate 501, the lift pins 222 can be actuated downward in the Z direction to position the substrate 501 on the substrate receiving surface 214 of the platform 290. To actuate the lift pins 222 downward in the Z direction, the substrate support assembly 212 is actuated upward in the Z direction such that the lift pins 222 are no longer in contact with the bottom 208 of the chamber body 202.

[0028]

[0034] 5B shows the rotation module 106 with the substrate support assembly 212 raised to an extended position. The vertical actuator 220 actuates the substrate support assembly 212 to the extended position. In the extended position, the rotation actuator 218 is configured to rotate the substrate support assembly 212 (shown in FIG. 5C). As shown, the lift pins 222 are removed from contact with the substrate. The substrate now rests on the substrate receiving surface 214. In the extended position, properties of the film deposited on the substrate in the first processing chamber 108 can be measured using the measurement device 228. Measuring the properties of the film allows for a better understanding of the film uniformity during the stages of the deposition process.

[0029]

[0035] Returning to FIG. 4, in block 406, the rotation module 106 is rotated by a predetermined angle, as shown in FIG. 5C. FIG. 5C illustrates the rotation of the substrate 501 by the rotation actuator 218, as described in block 406. The rotation actuator 218 rotates the shaft 216 of the substrate support assembly 212, thereby causing the platform 290 and the substrate 501 to rotate with the shaft 216. The rotation of the substrate 501 changes the position of the substrate 501 relative to the initial position of the substrate. In one embodiment, the rotation actuator 218 may rotate between about 1 degree and 360 degrees around the central axis of the substrate 501. For example, the rotation actuator 218 may rotate the substrate 501 between about 90 degrees and 180 degrees. Once the substrate 501 has been rotated, the processes illustrated in FIGS. 5A-5C are performed in reverse order so that the robot 114a can remove the substrate 501 from the rotation module 106.

[0030]

[0036] Continuing with reference to FIG. 4, in block 408, the substrate 501 is transferred from the rotation module 106 to the second processing chamber 108. In the second processing chamber 108, the substrate 501 undergoes a second portion of the film deposition process, as indicated by block 410. The robot 114b transfers the substrate 501 from the rotation module 106 to the second transfer chamber 104b and then to the second processing chamber 108. The second portion of the film deposition process may be the same film deposition process as the first portion of the film deposition process. For example, the second portion of the film deposition process may be a CVD chamber, a spin-on coating chamber, a flowable CVD chamber, a PVD chamber, and an ALD chamber, or any other deposition chamber suitable for depositing a thin film on a substrate.

[0031]

[0037] Processing of the substrate may proceed by repeating the method 400 described in FIG. 4 until a satisfactory film is formed on the substrate. The substrate may then be removed from the processing system 100. In one embodiment, the substrate may be rotated approximately 90 degrees four times to undergo four film deposition processes and be transferred to the rotation module 106 four times. Thus, the substrate may be in four different orientations within the processing chamber 108 as it is processed therein. Film properties may also be measured four separate times using the measurement device 228 on top of the rotation module 106.

[0032]

[0038] 6 illustrates a processing system 600 for processing a substrate, according to one embodiment. The processing system 600 is similar to the processing system 100. Thus, like numbers are used to refer to like components described above with reference to FIG. 1. The processing system 600 includes a transfer chamber 104, a rotation module 606, and one or more processing chambers 108. The processing system 600 may include a load lock chamber 110, a factory interface 112, and a controller 113. The one or more processing chambers 108 and the rotation module 606 are coupled to the transfer chamber 104.

[0033]

[0039] The rotation module 606 is similar to the rotation module 106. Thus, similar numbers are used to refer to similar components described above with reference to Figures 1, 2, and 3. The rotation module 606 is fluidly coupled to the transfer chamber 104. The rotation module 606 is configured to rotate a substrate. The rotation module 606 further includes a substrate support assembly 612. The substrate support assembly 612 includes a platform 690. The rotation module 606 is sized to have a length L that is less than a diameter D of the platform 690. Thus, the substrate support assembly 612 extends partially into the transfer chamber 104. The length L of the rotation module 606 compared to the diameter D of the platform 690 has several advantages. The processing volume V of the rotation module 606 is reduced, which results in less time required to pump down the rotation module 606. Additionally, because the platform 690 extends into the rotation module 606, moving parts such as a slit valve door between the transfer chamber and the rotation module are eliminated.

[0034]

[0040] 7 illustrates a processing system 700 for processing a substrate, according to one embodiment. The processing system 700 is similar to the processing system 100. Thus, like numbers are used to refer to like components described above with reference to FIG. 1. The processing system 700 includes a transfer chamber 104, a rotation module 706, and one or more processing chambers 108. The rotation module 706 is positioned at a load lock position. The rotation module 706 is configured to rotate the substrate. The rotation module 706 and the one or more processing chambers 108 are in fluid communication with the transfer chamber 104.

[0035]

[0041] While the above is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, the scope of which is determined by the claims that follow. [Explanation of symbols]

[0036] 100 Processing Systems 104a Chamber 104b Chamber 106 Chamber 108 Chamber 110 Load Lock Chamber 112 Factory Interface 113 Controller 114a Robot 114b Robot 116 Vacuum-tight platform 118 Pump System 120 Communication Cable 122 CPU 124 Memory 126 Support Circuit 202 Chamber body 204 Side wall 206 Ceiling 210 Internal volume 212 Substrate Support Assembly 214 Substrate receiving surface 216 Shaft 218 Rotary Actuator 220 Vertical Actuator 222 Lift pin 223 Rotation Sensor 224 Aperture 226 Bellows 228 Measuring Devices 230 Window 280 Internal volume 282 Internal volume 290 Platform 292 Shaft seal 294 Plate 400 ways 402 Block 404 Block 406 Block 408 Block 410 Block 501 Substrate 550 Robot Blade 600 Processing System 606 Rotation Module 612 Substrate Support Assembly 690 Platform 700 Processing System 706 Rotation Module

Claims

1. A method for processing a substrate, comprising: Positioning a substrate in a processing chamber in a first orientation; performing a first process on the substrate in the processing chamber while the substrate is in the first orientation; transferring the substrate in the first orientation from the processing chamber to a rotation module; rotating the substrate with the rotation module a first predetermined amount; transferring the substrate from the rotation module to the processing chamber and positioning the substrate in a second orientation different from the first orientation; performing a second process on the substrate in the processing chamber while the substrate is in the second orientation; transferring the substrate in the second orientation from the processing chamber to the rotation module; performing a uniformity measurement on the substrate at the rotation module after transferring the substrate at the second orientation from the processing chamber to the rotation module; a difference between the second orientation and the first orientation is related to a first predetermined amount of rotation of the substrate in the rotation module. method.

2. A method for processing a substrate, comprising: Positioning a substrate in a processing chamber in a first orientation; performing a first process on the substrate in the processing chamber while the substrate is in the first orientation; transferring the substrate in the first orientation from the processing chamber to a rotation module; rotating the substrate with the rotation module a first predetermined amount; transferring the substrate from the rotation module to the processing chamber and positioning the substrate in a second orientation different from the first orientation; performing a second process on the substrate in the processing chamber while the substrate is in the second orientation; transferring the substrate in the second orientation from the processing chamber to the rotation module; rotating the substrate with the rotation module a second predetermined amount; transferring the substrate from the rotation module to the processing chamber and positioning the substrate in a third orientation different from the second orientation; performing a third process on the substrate in the processing chamber while the substrate is in the third orientation; a difference between the second orientation and the first orientation is related to a first predetermined amount of rotation of the substrate in the rotation module; The method, wherein the difference between the third orientation and the second orientation is related to a second predetermined amount of rotation of the substrate in the rotation module.

3. The method of claim 1 or 2, wherein the first process is the same process as the second process.

4. 3. The method of claim 1 or 2, wherein measurements from a rotation sensor are used to control rotation of a substrate support in the rotation module and to rotate the substrate on the rotation module the first defined amount.

5. The method of claim 1 , wherein the uniformity measurement is performed using an ellipsometer.

6. The method of claim 2 , wherein the third process is the same process as the first process and the second process.

7. The method of claim 2 , wherein the third orientation is different from the first orientation.

8. The method of claim 1 or 2, wherein the first process and the second process are each a deposition process.

9. A method for processing a substrate, comprising: Positioning a substrate in a first orientation in a first processing chamber; performing a first process on the substrate in the first processing chamber while the substrate is in the first orientation; transferring the substrate in the first orientation from the first processing chamber to a rotation module; rotating the substrate with the rotation module a first predetermined amount; transferring the substrate from the rotation module to a second processing chamber and positioning the substrate in a second orientation different from the first orientation; performing a second process on the substrate in the second processing chamber while the substrate is in the second orientation; transferring the substrate from the second processing chamber to the rotation module in the second orientation; performing a uniformity measurement on the substrate at the rotation module after transferring the substrate at the second orientation from the second processing chamber to the rotation module; The method, wherein the difference between the second orientation and the first orientation is related to a first predetermined amount of rotation of the substrate in the rotation module.

10. A method for processing a substrate, comprising: Positioning a substrate in a first orientation in a first processing chamber; performing a first process on the substrate in the first processing chamber while the substrate is in the first orientation; transferring the substrate in the first orientation from the first processing chamber to a rotation module; rotating the substrate with the rotation module a first predetermined amount; transferring the substrate from the rotation module to a second processing chamber and positioning the substrate in a second orientation different from the first orientation; performing a second process on the substrate in the second processing chamber while the substrate is in the second orientation; transferring the substrate from the second processing chamber to the rotation module in the second orientation; rotating the substrate with the rotation module a second predetermined amount; transferring the substrate from the rotation module to the first processing chamber, the second processing chamber, or a third processing chamber and positioning the substrate in a third orientation different from the second orientation; performing a third process on the substrate in the corresponding first, second or third processing chamber while the substrate is in the third orientation; a difference between the second orientation and the first orientation is related to a first predetermined amount of rotation of the substrate in the rotation module; The method, wherein the difference between the third orientation and the second orientation is related to a second predetermined amount of rotation of the substrate in the rotation module.

11. 11. The method of claim 9 or 10, wherein the first process is the same process as the second process.

12. 11. The method of claim 9 or 10, wherein measurements from a rotation sensor are used to control rotation of a substrate support in the rotation module and to rotate the substrate on the rotation module the first defined amount.

13. The method of claim 9 , wherein the uniformity measurement is performed using an ellipsometer.

14. The method of claim 10 , wherein the third process is the same process as the first process and the second process.

15. The method of claim 10 , wherein the third orientation is different from the first orientation.

16. The method of claim 9 or 10, wherein the first process and the second process are each a deposition process.

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