Semiconductor process exhaust gas treatment equipment

Abstract

There is provided a semiconductor process exhaust gas treatment device for treating exhaust gas generated from a semiconductor process and directed to a vacuum pump. The semiconductor process exhaust gas treatment device includes a plasma generation unit for generating plasma, a reaction chamber in which perfluorides are decomposed by the plasma to generate decomposition gas, and a gas supply unit for supplying the decomposition gas from the reaction chamber to a treatment chamber into which exhaust gas from the semiconductor process flows and into which the treated exhaust gas is discharged to the vacuum pump, and the decomposition gas can inhibit the generation of solid state salts by components of the exhaust gas by reacting with the exhaust gas in the treatment chamber.

Description

[Technical field]

[0001] The present invention relates to an exhaust gas treatment apparatus for a semiconductor process, and more particularly to an exhaust gas treatment apparatus for suppressing the generation of solid salts before the exhaust gas is discharged by a vacuum pump. [Background technology]

[0002] As the semiconductor, LCD, and other industries become larger and production increases, the gases used in the processes are also increasing. The semiconductor manufacturing process has many steps, and the types of gases used are as diverse as the number of steps.

[0003] For example, in a semiconductor device manufacturing process, processes such as photolithography, etching, diffusion, and metal deposition are repeatedly performed on a wafer supplied to a process chamber. Various process gases are used during such semiconductor manufacturing processes, and after a process is completed, exhaust gas is discharged from the process chamber by a vacuum pump. Since the exhaust gas may contain toxic components, it is purified by an exhaust gas treatment device such as a scrubber.

[0004] However, depending on the temperature and pressure conditions, powder is generated from the exhaust gas during the semiconductor process, which can be problematic. For example, titanium chloride (TiCl 4 ) gas and ammonia (NH 3 In the TiN process, titanium nitride (TiN) is deposited on the wafer by reacting with ammonium chloride (NH 4 Cl) powder can become a problem if it is deposited on exhaust pipes and vacuum pumps.

[0005] FIG. 1 is a diagram illustrating an example of how salt powder is generated by exhaust gas in a semiconductor process.

[0006] Ammonium chloride (NH 4 The ammonia (NH Cl) powder is extracted from the exhaust gas discharged from the process chamber during the TiN process.3 Ammonium chloride is produced by the reaction of ammonium chloride gas with hydrogen chloride (HCl) gas. At 160-170℃ in the foreline, where the pressure is about 1-2 Torr, ammonium chloride exists in the gas phase. However, below 760 Torr and 340℃, it changes into a solid phase.

[0007] Ammonium chloride (NH 4 In order to solve the problem of powder deposition in the exhaust pipe caused by hydrogen chloride (HCl) gas and ammonia (NH 3 ) gas reacts to produce solid ammonium chloride (NH 4 Cl) cannot be produced, and solid-state ammonium chloride (NH 4 Cl) is a mixture of hydrogen chloride (HCl) gas and ammonia (NH 3 ) technology is used to break down the substances into gases that pass through the exhaust pipe.

[0008] However, such conventional techniques use hydrogen chloride (HCl) gas and ammonia (NH 3 ) gas is highly reactive, so ammonium chloride (NH 4 Cl) powder is easily regenerated, so it is difficult to provide a fundamental solution to the powder deposition problem.

[0009] Thus, TiCl, NH 3 or WF 6 By-products from processes that use 4 Cl, etc., and in particular, ammonium chloride, which is formed in large quantities due to the characteristics of the ALD TiN process, turns into a solid salt, causing the problems mentioned above. This has resulted in an increase in the number of vacuum pump breakdowns and increased stoppage losses, which has caused frequent production and facility operation problems. In addition, frequent maintenance has caused various problems, such as increased cleaning costs. Therefore, a solution is needed to ensure the stable and economical operation of vacuum pumps. Summary of the Invention [Problem to be solved by the invention]

[0010] The technical problem that the present invention aims to achieve is to reduce the amount of NF 3 Gas decomposition (generation of F radicals) produces NH 4 The present invention provides a semiconductor process exhaust gas treatment device that reduces Cl salt powder generation and ensures plasma electrode life compared to the prior art.

[0011] The technical problems that the present invention aims to achieve are not limited to the technical problems mentioned above, and other technical problems not mentioned will be clearly understood by those having ordinary skill in the art to which the present invention pertains from the following. [Means for solving the problem]

[0012] In order to achieve the above technical objectives, one embodiment of the present invention provides a semiconductor process exhaust gas treatment device that treats exhaust gas generated from a semiconductor process and directed to a vacuum pump. The semiconductor process exhaust gas treatment device includes a plasma generation unit that generates plasma, a reaction chamber in which perfluorides are decomposed by the plasma to generate decomposition gas, and a gas supply unit that supplies the decomposition gas from the reaction chamber to a treatment chamber into which exhaust gas from the semiconductor process flows and into which the treated exhaust gas is discharged to the vacuum pump, and the decomposition gas can inhibit the generation of solid state salts by components of the exhaust gas as a result of reaction with the exhaust gas in the treatment chamber.

[0013] In an embodiment of the present invention, the plasma generating unit generates N 2 A plasma is generated to generate NF as the perfluoride supplied to the reaction chamber. 3 N 2 Decomposed by plasma, N 2 , N.F. 3 or F - The decomposition gas supplied to the treatment chamber is mixed with the NH 3 , or the generated NH 4Cl reacts with NH in the gas phase 4 The generation of F causes the formation of solid-phase NH 4 The production of Cl can be suppressed.

[0014] In an embodiment of the present invention, the gas supply unit may include a connecting pipe through which a decomposition gas from the reaction chamber moves; and a gas injection unit provided between the connecting pipe and the processing chamber and configured to inject the decomposition gas into the processing chamber.

[0015] In an embodiment of the present invention, the gas injection unit may include an outer tube portion having one end connected to the connecting tube; and a differential pressure centering member that is provided inside the outer tube through the other end of the outer tube portion and spaced apart from the inner surface of the outer tube portion to inject the decomposition gas into the processing chamber according to a pressure difference between the connecting tube and the processing chamber.

[0016] In an embodiment of the present invention, the cracked gas may flow uniformly into the differential pressure filtering section due to a vortex caused by a space between the differential pressure centering section and the inner surface of the outer tube.

[0017] In the present embodiment, NF 3 By supplying gas to the reaction chamber rather than between the positive and negative electrodes that generate the arc plasma, the life of the positive and negative electrodes may be improved.

[0018] In an embodiment of the present invention, ammonium chloride is formed by the exhaust gas according to the following reaction formula 1.

[0019] [Reaction Scheme 1] 6TiCl 4 + 20 NH 3 →6TiN+N 2 + 12 HCl+ 12 NH 4 Cl

[0020] In the processing chamber, the formation of solid-phase ammonium chloride salt can be suppressed according to the following reaction formulas 2 and 3.

[0021] [Reaction Scheme 2] TiCl 4 +4 NH 3 + 3F →TiN +3 NH 4 F +2Cl 2

[0022] [Reaction Scheme 3] 8 NH 4 Cl+ 6F → 6 NH 4 F +8 HCl +N 2

[0023] In an embodiment of the present invention, the N 2 Plasma supply amount, NF 3 The gas supply device may further include a control unit for controlling the components and supply amount of the decomposition gas by adjusting the supply amount. Effect of the Invention

[0024] According to the embodiment of the present invention, the generation of ammonium chloride salt is suppressed by decomposition gas, so that the number of vacuum pump failures is reduced and the stoppage loss is reduced, thereby improving productivity. Also, the PM cycle can be extended.

[0025] In addition, the outer tube and differential pressure centering structure in the gas supply section allow the cracked gas components to be supplied more uniformly.

[0026] In addition, the exhaust gas decomposition device of the present application overcomes the capacity limitations of conventional MicroWave, ICP, and RF methods. That is, conventional technologies have problems with increased capacity, energy consumption, and operating costs due to increased gas consumption in recent nano processes. However, the semiconductor process exhaust gas treatment device of the present application can smoothly respond to increases in process gas consumption by easily adjusting the amount of decomposition gas supplied.

[0027] In addition, NF is directly applied to the electrodes of the plasma generating section. 3 NF into the reaction chamber without injecting 3 Supply N 2 NF by plasma 3 By adopting a method of decomposing and generating decomposition gas, it is possible to solve the electrode life problem caused by vacuum and extend the life of the electrodes in the plasma generating part. Of course, highly corrosion-resistant materials can be used for the reaction parts such as the reaction chamber.

[0028] The effects of the present invention are not limited to the effects described above, and should be understood to include all effects that can be inferred from the configuration of the invention described in the detailed description of the present invention or the claims. [Brief description of the drawings]

[0029] [Figure 1] 1 is a diagram illustrating an example in which salt powder is generated by exhaust gas in a semiconductor process. [Diagram 2] 1 is a diagram showing an exhaust gas treatment device for a semiconductor process according to an embodiment of the present invention. [Diagram 3] 2 is a diagram illustrating a process in which a semiconductor process exhaust gas treatment device according to an embodiment of the present invention operates between semiconductor equipment and a vacuum pump. [Figure 4] 2 is a diagram illustrating a manner in which an exhaust gas treatment device for a semiconductor process according to an embodiment of the present invention is connected to an exhaust gas from a semiconductor process and a vacuum pump. [Diagram 5] 2 is a diagram showing an example of a plasma generating unit and a reaction chamber of a semiconductor process exhaust gas treatment device. [Figure 6] 1 is a diagram for explaining the supply of NF3 to a half-layer chamber. [Figure 7] 1 is a view for explaining a connection portion of an exhaust gas treatment device for a semiconductor process; [Figure 8] 1 is a diagram for explaining differential pressure centering at a connection portion of an exhaust gas treatment device. [Figure 9] 4 is a diagram illustrating a process of reducing salt powder in an exhaust gas treatment device for a semiconductor process according to an embodiment of the present invention. [Figure 10] 1 is a graph showing a test result of NF3 decomposition efficiency of an exhaust gas treatment device for a semiconductor process according to an embodiment of the present invention. [Figure 11] 1 is a graph showing a test result of NF3 decomposition efficiency of an exhaust gas treatment device for a semiconductor process according to an embodiment of the present invention. [Figure 12] 4 is a diagram showing a performance test result of an exhaust gas treatment device for a semiconductor process according to an embodiment of the present invention. [Figure 13] 4 is a diagram showing a performance test result of an exhaust gas treatment device for a semiconductor process according to an embodiment of the present invention. [Figure 14] 2 is a diagram illustrating the performance and effects of an exhaust gas treatment device for a semiconductor process according to an embodiment of the present invention; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0030] Although the present invention can be modified in various ways and can have various forms, specific embodiments are illustrated in the drawings and described in detail in the present text. However, this is not intended to limit the present invention to the specific disclosed form, but it should be understood that the present invention includes all modifications, equivalents, and alternatives within the spirit and technical scope of the present invention. Similar reference numerals are used for similar components in describing each drawing.

[0031] Unless otherwise defined, all terms used herein, including technical and scientific terms, have the same meaning as commonly understood by a person of ordinary skill in the art to which this invention pertains. Terms as commonly used and predefined should be interpreted as having a meaning consistent with the meaning they have in the context of the relevant art, and should not be interpreted as having an ideal or overly formal meaning unless expressly defined in this application.

[0032] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0033] The present invention is a semiconductor process exhaust gas treatment device that treats exhaust gas generated from a semiconductor process and directed to a vacuum pump. Exhaust gas treatment device is the main process of semiconductors. Generated To prevent by-products of special gases from entering the vacuum pump and causing problems in pump maintenance and facility operation. do. This improves the efficiency of pump maintenance and facility operation, and improves the vacuum pump's lifespan (V / P Life Time).

[0034] FIG. 2 is a diagram showing an exhaust gas treatment device for a semiconductor process according to an embodiment of the present invention.

[0035] Referring to FIG. 2, The semiconductor process exhaust gas treatment device 100 includes a plasma generating unit 110, a reaction chamber 120, and a gas supplying unit .

[0036] The plasma generating unit 110 has a positive electrode and a negative electrode, and can generate an arc plasma. In addition, the plasma generating unit 110 is supplied with nitrogen (N 2 ) gas is supplied and nitrogen (N 2 ) plasma can be generated.

[0037] In the reaction chamber 120, the perfluoride is decomposed by the plasma to generate decomposition gas. That is, perfluoride and plasma are introduced into the reaction chamber 120, and the perfluoride is decomposed into a decomposition gas by the plasma.

[0038] The gas supply unit 130 can supply the decomposition gas from the reaction chamber 120 to the processing chamber 200 . The decomposition gas has a uniform concentration within the gas supply unit 130. For this purpose, the gas supply unit 130 includes a connecting pipe 131 and a gas injection unit 132.

[0039] The connecting pipe 131 is an elbow part with a double structure, in which the outer space is cooled by water, and the decomposition gas is supplied to the inner space from the reaction chamber 120 to the connecting pipe 131. The connecting pipe 131 is disposed between the reaction chamber 120 and the gas injection unit 132, and cools the decomposition gas supplied from the reaction chamber 120 and supplies it to the gas injection unit 132.

[0040] The gas injection unit 132 has an outer tube part 1321 and a differential pressure centering 1322. One side of the outer tube part 1321 is connected to the connecting tube 131, and the differential pressure centering 1322 is fastened to the other side. The differential pressure centering 1322 is disposed inside the outer tube part 1321 and has a shape that protrudes toward the connecting tube 131. The decomposition gas in the gas injection unit 312 has a uniform concentration due to a vortex flow, and is discharged to the outside.

[0041] FIG. 3 is a diagram for explaining a process in which the semiconductor process exhaust gas processing device according to an embodiment of the present invention operates between a semiconductor device and a vacuum pump.

[0042] Referring to FIG. 3, The exhaust gas from the semiconductor process flows into the processing chamber 200, The decomposition gas supplied from the exhaust gas processing device 100 also flows into the processing chamber 200 . Processing Chamber Within 200, the exhaust gas reacts with the decomposition gas. Treated exhaust gas The treated exhaust gas is Discharged to the vacuum pump do.

[0043] The decomposition gas supplied from the gas supply unit 130 to the processing chamber reacts with the exhaust gas in the processing chamber. Fixed Inhibits the formation of solid state salts or remove the solid salts that have already been generated It is possible.

[0044] FIG. 4 is a diagram illustrating a manner in which an exhaust gas treatment device for a semiconductor process according to an embodiment of the present invention is connected to an exhaust gas from a semiconductor process and a vacuum pump.

[0045] Referring to FIG. 4, nitrogen gas is supplied to the plasma generating unit, and cooling water is supplied to the plasma generating unit. 3 Gas is supplied to the reaction chamber, and cooling water is supplied to the reaction chamber. The cooling water is also supplied to the gas supply section, and the supplied cooling water is filled in the external space of the connecting pipe, which is a double-structure elbow part, and is used to cool the cracked gas.

[0046] Figure 5 shows FIG. 3 is a cross-sectional view illustrating the plasma generating unit of FIG. 2 according to the present invention.

[0047] Referring to FIG. The plasma generating unit 110 generates N 2 The plasma generating unit 110 is made up of an electrode cooling PCW unit 111, a negative electrode 112, a positive electrode 113, and a N 2It may include a supply unit 114, a plasma circular tube 115, and a cooling PCW unit 116. The PCW is an abbreviation of process cooling water, and indicates a cooling operation using water. However, the cooling operation does not necessarily have to be water, and any liquid capable of performing a cooling operation may be used.

[0048] N 2 Through the supply 114, N 2 When the gas flows in, an arc discharge occurs between the negative electrode 112 and the positive electrode 113, causing N 2 Plasma is generated. The generated N 2 The plasma is discharged through the plasma circular tube 115. The electrode cooling PCW unit 111 prevents the negative electrode 112 or the positive electrode 113 from overheating and performs a cooling operation. In addition, the cooling PCW unit 116 prevents high temperature heat in the plasma generating unit 110 from being transferred to the reaction chamber 120 and hindering the decomposition of gas.

[0049] FIG. 6 is a cross-sectional view showing the reaction chamber of FIG. 2 of the present invention.

[0050] 6, the reaction chamber has a perfluoride inlet 121 and an inner chamber 122. A gaseous perfluoride is supplied through the perfluoride inlet 121 and flows into the inner chamber 122. Reaction chamber 120 The inner chamber of Perfluoridation provided to An example of As NF 3 N 2 Decomposed by plasma, N 2 , N.F. 3 , or F - Decomposition gases containing NF 3 By plasma decomposition of the gas, F radicals can be produced.

[0051] NF 3 Gas directly Plasma generation part The gas is not injected into the torch but into the reaction chamber 120 located at the bottom. Inflow That is, NF 3 Gas is supplied to the reaction chamber 120 rather than between the positive and negative electrodes that generate the arc plasma. Plasma generation part The life span of the positive and negative electrodes can be improved.

[0052] The reaction chamber 120 has a double-structure chamber for maintaining a plasma flame at a pressure close to atmospheric pressure, thereby ensuring plasma density.

[0053] The decomposition gas thus generated is supplied to the treatment chamber as described above, and the decomposition gas is converted into NH 3 , or the generated NH 4 Cl reacts with NH in the gas phase 4 F is generated, resulting in solid-phase NH 4 The production of Cl can be suppressed.

[0054] FIG. 7 shows the semiconductor process exhaust gas treatment device. Gas supply section Concatenation tube 1 is a diagram for explaining the above.

[0055] FIG. 8 shows an exhaust gas treatment device. Gas Injection Unit 1 is a diagram for explaining the above.

[0056] FIG. 9 is a diagram illustrating a process in which the semiconductor process exhaust gas treatment device according to an embodiment of the present invention reduces salt powder.

[0057] The gas supply unit 130 may include a connecting pipe 131 and a gas injection unit 132 .

[0058] Referring to FIG. One end of the connecting pipe 131 is connected to the reaction chamber 120, The other end is connected to a gas supply. The decomposition gas from the reaction chamber 120 can be transferred through the connecting pipe 131. For example, the connecting pipe 131 can be a double-structure elbow part. The double-structure elbow part can have a PCW supply structure, which can increase the temperature by the inner pipe cooling effect. The temperature of the cracked gas in the connecting pipe can be adjusted. That is, the outer space of the double structure is filled with cooling water, and the cracked gas is supplied to the inner space. The temperature-adjusted cracked gas flows into the gas injection part.

[0059] Referring to FIG. The gas injection unit 132 is provided between the connecting pipe 131 and the processing chamber. The gas injection unit 132 can inject the decomposition gas from the connecting pipe 131 into the processing chamber.

[0060] For example, the gas injection unit 132 may include an outer tube part 1321 having one end connected to the connecting tube 131 and a differential pressure centering 1322. The gas injection unit 132 may be a connecting centering that distributes the pressure inside the connecting tube 131.

[0061] The outer pipe portion 1321 may be a pipe-shaped connector that connects the connecting pipe 131 and the processing chamber. Differential Pressure Centering 1322 To approach The shape may have a diameter that decreases as the diameter increases. One side of the outer pipe part 1321 is connected to a connecting pipe, and the other side is connected to a differential pressure centering 1322 .

[0062] The differential pressure centering 1322 is disposed on the outer tube 1321 so as to be spaced apart from the inner surface of the outer tube 1321. 1322 The differential pressure centering 1322 has a tube-shaped structure having a smaller diameter than the outer tube portion 1321. 131. The differential pressure centering 1322 can inject the decomposition gas into the processing chamber by the pressure difference between the connecting pipe 131 and the processing chamber. For example, the pressure of the connecting pipe 131 is 10 -1 The process chamber pressure is 10 -3 Torr. Differential Pressure Centering Due to the structural feature of the differential pressure centering, a vortex of the fluid and an increase in the pressure of the fluid occur at the differential pressure centering portion. Therefore, the pressure of the fluid in the inner region of the outer tube where the differential pressure centering is arranged is higher than the pressure at the portion where the differential pressure centering is exhausted. Therefore, the decomposition gas at the differential pressure centering portion can be flowed into the treatment chamber due to the pressure difference. .

[0063] Differential Pressure Centering 1322 The space between the outer surface of the tube and the inner surface of the outer tube allows vortex currents to occur. A vortex is a phenomenon in which a part of a fluid is disturbed and flows in the opposite direction to the main flow. The decomposition gas flowing in from the connecting pipe 131 has a main flow that flows from the connecting pipe to the differential pressure centering 1322. The decomposition gas forms a vortex flow that flows in the opposite direction to the main flow in the space between the outer surface of the differential pressure centering 122 and the outer pipe part 1321. The radius of the outer pipe part 1321 decreases as it moves away from the connecting pipe 131, so the pressure is higher as it gets closer to the processing chamber of FIG. 3. Therefore, the speed of the vortex is greater than the speed of the main flow, and the decomposition gas in the gas injection part has a uniform concentration. As a result, the uniformity of the decomposition gas flowing from the connecting pipe 131 to the gas injection part 132 is improved, and the differential pressure centering Therefore, the decomposition gas can be supplied to the processing chamber with improved uniformity.

[0064] The semiconductor process can form the ammonium salt as shown in Reaction Scheme 1 below.

[0065] [Reaction Scheme 1] 6TiCl 4 + 20 NH 3 →6TiN+N2 + 12 HCl+ 12 NH 4 Cl

[0066] As mentioned above, ammonium chloride can change from a gaseous phase to a solid phase depending on the temperature and pressure conditions. If solid salt is generated and enters the vacuum pump, it can cause the vacuum pump to break down, interrupting the process and causing major problems in smooth operation.

[0067] The semiconductor process exhaust gas treatment device according to this embodiment can gasify solid salt generated from exhaust gas from a semiconductor process before it is discharged to a vacuum pump, thereby preventing problems such as vacuum pump failure.

[0068] Specifically, in the processing chamber, the generation of solid phase ammonium chloride can be suppressed as shown in the following reaction formulas 2 and 3.

[0069] [Reaction Scheme 2] TiCl 4 +4 NH 3 + 3F →TiN +3 NH 4 F +2Cl 2

[0070] [Reaction Scheme 3] 8 NH 4 Cl+ 6F → 6 NH 4 F +8 HCl +N 2

[0071] N 2 The decomposition gases formed by the plasma are N 2 , N.F. 3 or F -Such high energy components of the decomposition gas react with ammonia in the exhaust gas to suppress the generation of ammonium chloride, or react with already generated ammonium chloride to decompose the ammonium chloride, thereby suppressing the generation of solid ammonium chloride.

[0072] Figure 1 0 is NF of the semiconductor process exhaust gas treatment device according to one embodiment of the present invention 3 Gas Decomposition efficiency of 1 is a diagram showing test results.

[0073] FIG. 11 is a table showing the test conditions of FIG. 10 according to one embodiment of the present invention.

[0074] In Figure 11, 2 Process conditions such as plasma supply amount are presented.

[0075] Referring to Figs. 10 and 11, Under the current and voltage conditions set in the table, 2 Plasma is generated. N2 generated by flowing into the plasma generating section 2 The amount of plasma is as shown in the table in Figure 11. In addition, NF 3 is supplied at a flow rate of 3 L / m. The amount of NF3 gas is measured downstream of the vacuum pump under the condition that no exhaust gas is supplied. When the plasma is off, NF 3 A large amount of gas was detected, 2 When plasma is supplied at 6 L / m, NF 3 It can be seen that decomposition progresses as N 2 When plasma is increased, NF 3 It can be seen that the decomposition is smooth, since the amount detected is very small or not detected at all.

[0076] In this way, N 2 By adjusting the plasma supply amount, the decomposition gas components and amounts can be adjusted and supplied to the processing chamber. 2 , N.F. 3 , or F - The ingredients can be adjusted.

[0077] The semiconductor process exhaust gas treatment device of this embodiment is 2Plasma supply and NF 3 The gas supply device may further include a control unit for controlling the components and supply amount of the decomposition gas by adjusting the supply amount.

[0078] Figure 1 2 is , According to an embodiment of the present invention Processing Chamber Inside ammonia of The results of binding reactions are shown. It is a drawing .

[0079] FIG. 13 is a table disclosing the test conditions of FIG. 12 according to one embodiment of the present invention.

[0080] 12 and 13, NH 3 Gas is supplied to the plasma generating section, and N 2 Gas is supplied to the reaction chamber at a flow rate of 3 L (liter) / min. 3 Gas is supplied. N exhausted via vacuum pump 2 The flow rate of the plasma was 20 L / min. The current and voltage conditions were N 2 The power required to generate the plasma is shown in the graph of FIG. 3 and NH 3 The concentration is displayed and is measured in the gas exhausted through the vacuum pump.

[0081] Ammonia begins to flow into the treatment chamber from 30 seconds into the performance test. At 1 minute and 30 seconds, NH 3 The supply of N 2 NF to plasma 3 Gas is supplied. Also, from about 3 minutes and 30 seconds, NH 3 Gas is supplied and N 2 The plasma repeats on and off for separate time periods. 2 By repeatedly turning the plasma on and off, the process gas is evenly distributed in the reaction chamber, gas supply section, and process chamber, creating conditions for the various components to operate normally.

[0082] At approximately 8 minutes and 45 seconds, 2 When the plasma is turned on, NH 3 When the gas starts to decompose, the concentration drops rapidly. 2 The plasma is turned off and NH 3 Gas supplies will also be cut off. 2 NF by turning off the plasma 3 No decomposition gas is generated by the decomposition of NF 3 is discharged through a vacuum pump, and the discharged NF 3 The amount of NH 3 The gas supply was also interrupted, so the NH 3 is not detected either.

[0083] Finally, at 11 minutes and 35 seconds, 2 When the plasma is turned on, the plasma creates NF 3 The gas is decomposed and generated as decomposition gas. Therefore, the NF 3 The amount of decreases rapidly.

[0084] That is , P When I'm Rasmaon Generated decomposition gas It was confirmed that the components react very well with ammonia in the exhaust gas, and the decomposition gas was adjusted to produce N 2 Supply only N 2 Plasma R NF 3 Decomposition gas of and combine with ammonia to form a bond. Lead It is possible.

[0085] This suppresses the production of ammonium chloride, or converts the produced ammonium chloride into NH 4 It can be broken down into gases of the F form.

[0086] FIG. 14 is a diagram for explaining the performance of an exhaust gas treatment device for a semiconductor process according to an embodiment of the present invention. table It is.

[0087] Referring to FIG. 14, it can be seen that the semiconductor process exhaust gas treatment device according to the present invention has excellent and significant effects compared to the conventional method.

[0088] In the conventional technology, NF 3 Indirect decomposition methods using microwaves or ICP are used for the gas, and power consumption increases due to the indirect decomposition method. 2 Plasma is generated by directly arcing the gas, and NF 3 This method uses a direct decomposition method in which decomposition gas is generated by contacting gas, and therefore it is possible to generate high-density plasma with low power and generate large amounts of decomposition gas.

[0089] In other words, as mentioned above, by suppressing the generation of ammonium chloride salts using decomposition gas, the number of vacuum pump failures and loss of power can be reduced, improving productivity. In addition, the PM cycle can be extended.

[0090] In addition, the outer tube part 1321 and the differential pressure centering structure in the gas supply part 130 allow the components of the cracked gas to be supplied more uniformly.

[0091] In addition, the exhaust gas decomposition device of the present application overcomes the capacity limitations of conventional MicroWave, ICP, and RF methods. That is, conventional technologies have problems with increased capacity, energy consumption, and operating costs due to increased gas consumption in recent nano processes. However, the semiconductor process exhaust gas treatment device of the present application can smoothly respond to increases in process gas consumption by easily adjusting the amount of decomposition gas supplied.

[0092] In addition, NF 3 NF into the reaction chamber 120 without injecting 3 Supply N 2 NF by plasma 3 By adopting a method of decomposing the In the plasma generating section Electrode life (Life Time) is shortened This solves the problem and can extend the life of the electrodes of the plasma generating unit 110. Of course, a material with high corrosion resistance can be used for the reaction unit such as the reaction chamber.

[0093] The above description of the present invention is for illustrative purposes only, and those skilled in the art will understand that the present invention can be easily modified into other specific forms without changing the technical idea or essential features of the present invention. Therefore, it should be understood that the above-described embodiments are illustrative and not limiting in all respects. For example, each component described as a single type can be implemented in a distributed form, and similarly, each component described as a distributed type can be implemented in a combined form.

[0094] The scope of the present invention is defined by the claims set forth below, and all modifications and variations that fall within the meaning and scope of the claims and their equivalent concepts should be interpreted as being included in the scope of the present invention.

Claims

1. In a semiconductor process exhaust gas treatment device for treating exhaust gas generated from a semiconductor process and directed to a vacuum pump, A plasma generating unit that generates plasma; a reaction chamber in which the perfluoride is decomposed by the plasma to produce a decomposition gas; a gas supply unit that supplies the decomposition gas from the reaction chamber to a processing chamber into which exhaust gas from the semiconductor process flows; the exhaust gas and the decomposition gas flow into the processing chamber, and reaction products of the decomposition gas and the exhaust gas are exhausted by a vacuum pump; The decomposition gas reacts with the exhaust gas in the treatment chamber to suppress the generation of solid state salts by components of the exhaust gas; The plasma generating unit generates N 2 plasma by arc plasma, The NF 3 as the perfluoride supplied to the reaction chamber is decomposed by the N 2 plasma to generate the decomposition gas containing N 2 , NF 3 or F − ; The decomposition gas supplied to the processing chamber reacts with NH3 in the exhaust gas or NH4Cl generated to generate gas phase NH4F, thereby suppressing generation of solid phase NH4Cl.

2. The gas supply unit includes: a manifold through which decomposition gases travel from the reaction chamber; 2. The semiconductor process exhaust gas treatment device according to claim 1, further comprising: a gas injection unit disposed between the connecting pipe and the treatment chamber, for injecting the decomposition gas into the treatment chamber.

3. The gas injection unit is an outer tube portion, one end of which is connected to the connecting tube; 3. The semiconductor process exhaust gas treatment device of claim 2, further comprising: a differential pressure centering pipe provided inside the outer tube portion so as to pass through the other end of the outer tube portion and be spaced apart from an inner surface of the outer tube portion, and configured to inject the decomposition gas into the treatment chamber according to a pressure difference between the connecting pipe and the treatment chamber.

4. 4. The semiconductor process exhaust gas treatment device according to claim 3, wherein the decomposition gas flows into the differential pressure centering with improved uniformity due to a vortex caused by a space between the differential pressure centering and the inner surface of the outer tube portion.

5. 3. The device for treating exhaust gas from a semiconductor manufacturing process according to claim 2, wherein the NF3 is supplied to the reaction chamber, not between the positive and negative electrodes that generate the arc plasma, thereby improving the life of the positive and negative electrodes.

6. 2. The semiconductor process exhaust gas treatment device according to claim 1, wherein ammonium chloride is formed by the exhaust gas according to the following reaction formula 1, and generation of solid ammonium chloride salt is suppressed in the treatment chamber according to the following reaction formulas 2 and 3. [Reaction Scheme 1] 6TiCl ４ +8NH ３ →6TiN+N ２ +24HCl+NH ４ Cl [Reaction Scheme 2] <h2 style=";text-align:left;direction:ltr">TiCl<h2 style=";text-align:left;direction:ltr"> ４ <h2 style=";text-align:left;direction:ltr"> +N<h2 style=";text-align:left;direction:ltr"> ２ <h2 style=";text-align:left;direction:ltr"> +HCl+NH<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> +NF<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> →TiN+Ti<h2 style=";text-align:left;direction:ltr"> ｘ <h2 style=";text-align:left;direction:ltr"> F<h2 style=";text-align:left;direction:ltr"> ｙ <h2 style=";text-align:left;direction:ltr"> +NF<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> +HF+HCl+Ti<h2 style=";text-align:left;direction:ltr"> ３ <h2 style=";text-align:left;direction:ltr"> N<h2 style=";text-align:left;direction:ltr"> ４ <h2 style=";text-align:left;direction:ltr"> +NH<h2 style=";text-align:left;direction:ltr"> ４ <h2 style=";text-align:left;direction:ltr"> F [Reaction Scheme 3] NH ４ Cl+NF ３ →NH ４ F+Cl ２ +HCl

7. The N ２ The plasma supply amount, NF ３ 3. The semiconductor process exhaust gas treatment device according to claim 2, further comprising a control unit for controlling the amount of the decomposition gas supplied by adjusting the amount of the decomposition gas supplied.

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