Semiconductor Device

Abstract

To provide: a semiconductor device which includes a metal oxide film including a crystal part; a semiconductor device which includes a metal oxide film and has high field-effect mobility; and a highly reliable semiconductor device including a metal oxide film.SOLUTION: A transistor 200 includes insulators 214, 216, a conductor 205 formed over the insulator 214, insulators 220-224 formed over the conductor 205, an oxide 230 formed over the insulator 224, an insulator 250 formed over the oxide 230, a conductor 260 formed over the insulator 250, an insulator 280 formed over the insulator 250 and the conductor 260, and an insulator 282 formed over the insulator 280. The oxide 230 contains In, M (M is Al, Ga, Y, or Sn), and Zn, and includes a first crystal part and a second crystal part. The first crystal part has c-axis orientation, and the second crystal part does not have c-axis orientation.SELECTED DRAWING: Figure 30

Claims

1. A first insulator; a first conductor on the first insulator; and a second insulator on the first conductor; and a first metal oxide on the second insulator; and a second conductor on the first metal oxide, a third conductor, and a second metal oxide; a third insulator on the second conductor; and a fourth insulator on the third conductor; and a fifth insulator on the second metal oxide; and a fourth conductor on the fifth insulator; and a sixth insulator on the fifth insulator and the fourth conductor; and a seventh insulator on the sixth insulator; the first metal oxide has a first crystal portion and a second crystal portion, the first crystal portion has a c-axis orientation in a direction perpendicular or substantially perpendicular to an upper surface of the first metal oxide; the second crystal portion does not have a c-axis orientation in a direction perpendicular or substantially perpendicular to an upper surface of the first metal oxide, the first metal oxide is a mixture of a third region and a fourth region, the third region includes In, an element M, Zn, and O; the fourth region includes In, an element M, Zn, and O; the element M of the third region and the element M of the fourth region are Al, Ga, Y, or Sn; the third region has a higher atomic ratio of In to the element M than the fourth region; The semiconductor device, wherein the second insulator, the fifth insulator, and the sixth insulator contain oxygen and silicon.

2. In claim 1, The semiconductor device, wherein the third insulator and the fourth insulator are any one of aluminum oxide, gallium oxide, and silicon nitride.

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