Clamp-on dual channel shower head

Abstract

An exemplary dual channel showerhead may include an upper plate defining a first plurality of apertures. The showerhead may include a base having a lower plate. The lower plate may define a second plurality of apertures and a third plurality of apertures. Each of the first plurality of apertures may be fluidly coupled to each of the second plurality of apertures to define a fluid path extending from a top surface of the showerhead to a bottom surface of the showerhead. The base may define a gas inlet fluidly coupled to the third plurality of apertures. The base may be removably coupled to the upper plate using one or more fastening mechanisms. The showerhead may include a compressible gasket disposed between the upper plate and the lower plate.

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of and priority to U.S. patent application Ser. No. 63 / 236,998, entitled "CLAMPED DUAL-CHANNEL SHOWERHEAD," filed Aug. 25, 2021, the entire contents of which are incorporated herein by reference.

[0002]

[0002] The present technology relates to semiconductor processes and equipment. More specifically, the present technology relates to plasma components of processing systems. [Background technology]

[0003]

[0003] Integrated circuits are made possible by processes that produce intricately patterned layers of material on a substrate surface. Producing patterned materials on a substrate requires a controlled method for removing exposed material. Chemical etching is used for a variety of purposes, including transferring a pattern in a photoresist to an underlying layer, thinning a layer, or thinning the lateral dimensions of features already present on a surface. Often, it is desirable for an etching process to etch one material faster than another, for example, to facilitate the pattern transfer process. Such an etching process is said to be selective to the first material. As a result of the diversity of materials, circuits, and processes, etching processes have been developed that have selectivity to a variety of materials.

[0004]

[0004] Dry etches produced with a localized plasma formed within the substrate processing region are able to penetrate more constrained trenches with less distortion of delicate remaining structures. However, as integrated circuit technology shrinks, the equipment that delivers the precursors can affect the uniformity and quality of the precursors and plasma species used.

[0005]

[0005] Accordingly, there is a need for improved system components that can be used effectively in plasma environments while providing an appropriate degradation profile. These and other needs are addressed by the present technique. Summary of the Invention

[0006] An exemplary dual channel showerhead may include an upper plate defining a first plurality of apertures. The showerhead may include a base having a lower plate. The lower plate may define a second plurality of apertures and a third plurality of apertures. Each of the first plurality of apertures may be fluidly coupled to each of the second plurality of apertures to define a fluid path extending from a top surface of the showerhead to a bottom surface of the showerhead. The base may define a gas inlet fluidly coupled to the third plurality of apertures. The base may be removably coupled to the upper plate with one or more fastening mechanisms. The showerhead may include a compressible gasket fluidly isolating the first plurality of apertures and the second plurality of apertures from the third plurality of apertures. The compressible gasket may be disposed between the upper plate and the lower plate.

[0007] In some embodiments, each of the third plurality of apertures may be fluidly isolated from the first plurality of apertures and the second plurality of apertures. The base may define a plenum fluidly coupling the gas inlet to each of the third plurality of apertures. The base may define a recursive flow path fluidly coupling the gas inlet to the plenum. The gasket may include a body characterized by a top surface and a bottom surface. One or both of the top surface and the bottom surface may include a plurality of spigots projecting outwardly from the body of the gasket. Each of the plurality of spigots may be vertically aligned with a respective one of the first plurality of apertures. The gasket may include polytetrafluoroethylene (PTFE). One or both of the top surface of the gasket and the bottom surface of the gasket may include a plurality of spigots projecting outwardly from the body of the gasket. The gasket may have a thickness that decreases with increasing radial distance from a center of the gasket. The bottom plate may be removably coupled to the base using one or more fasteners. The gasket may have a thickness that decreases with increasing radial distance from the center of the gasket.

[0008] Some embodiments of the present technology may include a dual channel showerhead. The showerhead may include a top plate defining a first plurality of apertures. The showerhead may include a base having a bottom plate. The bottom plate may define a second plurality of apertures and a third plurality of apertures. Each of the first plurality of apertures may be fluidly coupled to a respective one of the second plurality of apertures to define a fluid path extending from a top surface of the showerhead to a bottom surface of the showerhead. The base may define a gas inlet fluidly coupled to the third plurality of apertures. The base may be removably coupled to the top plate using one or more fastening mechanisms.

[0009]

[0009] In some embodiments, the base may define a seat for receiving the upper plate. An outer region of the seat may taper upwardly toward a periphery of the seat. A periphery of the bottom surface of the upper plate may be tapered. A degree of taper of the outer region of the seat may match a degree of taper of a periphery of the bottom surface of the seat. The bottom surface of the upper plate may include a plurality of spigots extending downwardly from the bottom surface. Each of the plurality of spigots may define at least a portion of a respective one of the first plurality of apertures. The showerhead may include a plurality of seals. Each of the plurality of seals may be disposed at an interface between a bottom end of each of the plurality of spigots and an upper surface of the lower plate. The bottom surface of the upper plate may include a plurality of spigots extending downwardly from the bottom surface. Each of the plurality of spigots may define at least a portion of a respective one of the first plurality of apertures. The upper surface of the lower plate may include a plurality of receptor cups extending upwardly from the upper surface. Each of the plurality of receptor cups may receive a respective one of the plurality of spigots. Each of the first plurality of apertures and each of the second plurality of apertures may be generally cylindrical. An inner wall of each of the third plurality of apertures may taper inwardly to a choke point located within a central portion of the respective aperture. The base may include a heating coil extending at least partially around a circumference of the base.

[0010] Some embodiments of the present technique may include a method of processing a substrate. The method may include flowing plasma excited species into a processing chamber through a first plurality of apertures formed in an upper plate of a showerhead and a second plurality of apertures formed in a lower plate of the showerhead. The method may include flowing precursors into the processing chamber through a third plurality of apertures formed in the lower plate via a gas inlet formed in a base of the showerhead. The upper plate may be removably coupled to the base using one or more fastening mechanisms. The method may include removing a volume of material from a substrate disposed in the processing chamber.

[0011] In some embodiments, the showerhead can include a compressible gasket disposed between the upper plate and the lower plate. Flowing the precursor can include introducing the precursor into a plenum fluidly coupled to each of the third plurality of apertures via a recursive flow path extending between the gas inlet and the plenum.

[0012]

[0012] The above techniques may provide numerous advantages over conventional systems and techniques. For example, better cleaning of the dual channel showerhead may be facilitated by removably coupling the top and / or bottom plates of the dual channel showerhead to the base of the dual channel showerhead. Additionally, multiple precursors may be delivered through the assembly while remaining fluidically isolated from one another. For example, gaskets, seals, and / or coupling mechanisms may be used to fluidically isolate the two fluid paths from one another. These and other embodiments, along with their many advantages and features, are described in more detail in conjunction with the following description and accompanying figures.

[0013] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the drawings. [Brief description of the drawings]

[0014] [Figure 1] FIG. 2 illustrates a top view of one embodiment of an exemplary processing tool. [Figure 2A] 1 is a schematic cross-sectional view of an exemplary processing chamber. [Figure 2B] 1 is a schematic cross-sectional view of an exemplary processing chamber. [Figure 2C] 1 is a schematic cross-sectional view of an exemplary processing chamber. [Figure 3A] FIG. 1 is a schematic diagram illustrating an exemplary showerhead configuration in accordance with the disclosed technology. [Figure 3B] FIG. 1 is a schematic diagram illustrating an exemplary showerhead configuration in accordance with the disclosed technology. [Figure 3C]FIG. 1 is a schematic diagram illustrating an exemplary showerhead configuration in accordance with the disclosed technology. [Figure 3D] FIG. 1 is a schematic diagram illustrating an exemplary showerhead configuration in accordance with the disclosed technology. [Figure 3E] FIG. 1 is a schematic diagram illustrating an exemplary showerhead configuration in accordance with the disclosed technology. [Figure 4] FIG. 1 is a schematic diagram illustrating an exemplary showerhead configuration in accordance with the disclosed technology. [Diagram 5] FIG. 1 is a schematic diagram illustrating an exemplary showerhead configuration in accordance with the disclosed technology. [Figure 6] FIG. 1 is a schematic diagram illustrating an exemplary showerhead configuration in accordance with the disclosed technology. [Figure 7] FIG. 1 is a schematic diagram illustrating an exemplary showerhead configuration in accordance with the disclosed technology. [Figure 8] FIG. 1 is a schematic diagram illustrating an exemplary showerhead configuration in accordance with the disclosed technology. [Figure 9] FIG. 1 is a schematic diagram of an exemplary showerhead configuration in accordance with the disclosed technology. [Figure 10] FIG. 1 is a flow diagram of an exemplary method of semiconductor processing in accordance with some embodiments of the present technique. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015]

[0024] In the accompanying figures, similar components and / or features may be labeled with the same numerical reference label. Additionally, various components of the same type may be distinguished by following the reference label with a letter that distinguishes the similar components and / or features. When only a first numerical reference label is used herein, the description is applicable to any one of the similar components and / or features having the same first numerical reference label, regardless of the trailing letter.

[0016]

[0025] Dual channel showerheads and other gas distribution systems are often used to provide multiple fluid flow paths for delivering multiple process gases to a processing region of a semiconductor processing chamber during deposition and / or etching processes. A conventional dual channel showerhead includes a body including an upper plate and a lower plate that are fused together by brazing, electron beam welding, and / or other techniques. However, such dual channel showerheads can be difficult to clean because the small size of the apertures can make it difficult for cleaning fluids to flow into the interior of the dual channel showerhead. As a result, residues can accumulate inside the showerhead. This residue can change the flow conductance through the showerhead, causing residue particles to fall onto the wafer. Furthermore, process gases can react with the residues. The above problems can lead to non-uniformity problems and defects on the wafer.

[0017]

[0026] The present technology overcomes these challenges by incorporating a top plate and / or bottom plate that are removably coupled to the base of the dual channel showerhead, allowing the showerhead to be opened to expose and clean the interior of the various showerhead components. By facilitating better cleaning of the showerhead, the embodiments described herein can provide better uniformity of the processing steps and prevent drop defects and any residue buildup within the showerhead and reaction with the process gases. Additionally, the showerhead can include gaskets, seals, and / or connecting components that help fluidically isolate the flow paths for the two different gases, allowing the dual channel showerhead to deliver two different process gases to a process region of a processing chamber without the two gases mixing until they reach the processing region.

[0018]

[0027] While the remainder of the disclosure will always specify a particular deposition process using the disclosed technology, it will be readily understood that the systems and methods are equally applicable to other deposition and cleaning chambers, as well as processes that may occur in the described chambers. Thus, the technology should not be considered limited to use with only these particular deposition processes or chambers. The present disclosure will describe one possible system and chamber that may include a pedestal according to an embodiment of the present technology, before describing additional variations and adjustments to this system according to an embodiment of the present technology.

[0019]

[0028] 1 illustrates a top view of one embodiment of a deposition, etch, bake, and / or cure chamber processing tool 100 according to disclosed embodiments. In the figure, a pair of FOUPs (Front Opening Unified Pods) 102 provide substrates (e.g., semiconductor wafers of various specified diameters) that can be received by a robotic arm 104 and placed in a low pressure holding area 106 before being placed in one of the substrate processing sections 108a-f of tandem process chambers 109a-c. A second robotic arm 110 can be used to transport substrates back and forth from the holding area 106 to the processing chambers 108a-f.

[0020]

[0029] The substrate processing sections 108a-f of the tandem process chambers 109a-c may include one or more system components for depositing, annealing, curing and / or etching a substrate or a film thereon. An exemplary film may be a flowable dielectric, but many types of films may be formed or processed using the processing tool. In one configuration, two pairs of tandem processing sections of the processing chambers (e.g., 108c-d and 108e-f) may be used to deposit a dielectric material on a substrate, and a third pair of tandem processing sections (e.g., 108a-b) may be used to anneal the deposited dielectric. In another configuration, two pairs of tandem processing sections of the processing chambers (e.g., 108c-d and 108e-f) may be configured to both deposit and anneal a dielectric film on a substrate, and a third pair of tandem processing sections (e.g., 108a-b) may be used for UV or e-beam curing of the deposited film. In yet another configuration, all three pairs of tandem processing sections (e.g., 108a-f) can be configured to deposit and cure a dielectric film on a substrate, or to etch features in a deposited film.

[0021]

[0030] In yet another configuration, two pairs of tandem processing sections (e.g., 108c-d and 108e-f) can be used for both deposition and UV or e-beam curing of the dielectric film, and a third pair of tandem processing sections (e.g., 108a-b) can be used for annealing the dielectric film. Furthermore, one or more of the tandem processing sections 108a-f can be configured as processing chambers, which can be wet processing chambers or dry processing chambers. These process chambers can include heating the dielectric film in an atmosphere that includes moisture. Thus, an embodiment of the system 100 can include wet processing tandem processing sections 108a-b and annealing tandem processing sections 108c-d that perform both wet and dry annealing on the deposited dielectric film. It will be understood that additional configurations of deposition, annealing, and curing chambers for the dielectric film are contemplated by the system 100.

[0022]

[0031] FIG. 2A is a cross-sectional view of an exemplary process chamber section 200 with a divided plasma generation region within the processing chamber. During film deposition (e.g., silicon oxide, silicon nitride, silicon oxynitride, or silicon oxycarbide), process gases can be flowed through a gas inlet assembly 205 into a first plasma region 215. A remote plasma system (RPS) 201 can process the gases through the gas inlet assembly 205. Two different gas supply channels are visible within the gas inlet assembly 205. A first channel 206 delivers gases through the remote plasma system (RPS) 201, and a second channel 207 bypasses the RPS 201. In the disclosed embodiment, the first channel 206 can be used for process gases and the second channel 207 can be used for processing gases. The process gases can be excited before entering the first plasma region 215 within the remote plasma system (RPS) 201. A lid 212, a showerhead 225, and a substrate support 265 having a substrate 255 disposed thereon are shown according to disclosed embodiments. The lid 212 may be pyramidal, conical, or other similar structure that widens from a narrow top to a wide bottom. Lids 212 of other geometries may also be used. The lid (or conductive top) 212 and the showerhead 225 are shown with an insulating ring 220 therebetween, which allows an AC potential to be applied to the lid 212 relative to the showerhead 225. The insulating ring 220 may be disposed between the lid 212 and the showerhead 225 to allow a capacitively coupled plasma (CCP) to form in the first plasma region. A baffle (not shown) may also be disposed in the first plasma region 215 to affect the flow of fluid into the region through the gas inlet assembly 205.

[0023]

[0032] The showerhead embodiments described herein allow fluids such as precursors, e.g., silicon-containing precursors, to flow into the processing region 233. Excited species from the process gas in the plasma region 215 can travel through the apertures in the showerhead 225 and react with precursors flowing from the showerhead into the processing region 233. There may be little or no plasma present in the processing region 233. The excited derivatives of the process gas and precursors can combine in the region above the substrate and possibly on the substrate to form a film on the substrate that may be flowable in the disclosed applications. In a flowable film, as the film grows, the recently added material may have a higher mobility than the underlying material. As the organic content is reduced by evaporation, the mobility may decrease. After deposition is completed, the technique can be used to fill gaps with a flowable film without leaving a conventional density of organic content in the film. A curing step can be used to further reduce or remove the organic content from the deposited film.

[0024]

[0033] Directly exciting the process gas in the first plasma region 215, exciting the process gas in the RPS, or both may provide several advantages. The plasma in the first plasma region 215 may increase the concentration of excited species from the process gas in the processing region 233. This increase may be due to the location of the plasma in the first plasma region 215. By positioning the processing region 233 closer to the first plasma region 215 than the remote plasma system (RPS) 201, excited species may have less time to leave the excited state due to collisions with other gas molecules, chamber walls, and showerhead surfaces.

[0025]

[0034] The uniformity of the concentration of excited species originating from the process gas may also be improved within the processing region 233. This may result from the shape of the first plasma region 215, which may be more similar to the shape of the processing region 233. Excited species generated in the remote plasma system (RPS) 201 may travel a longer distance to pass through apertures near the edge of the showerhead 225 compared to species passing through apertures near the center of the showerhead 225. The longer distance may result in less excitation of the excited species, for example, slower growth rates near the edge of the substrate. Exciting the process gas in the first plasma region 215 may mitigate this variation.

[0026]

[0035] The process gases can be excited in the RPS 201 and can pass in an excited state through the showerhead 225 to the process region 233. Alternatively, power can be applied to the first process region to excite the plasma gases or enhance the process gases already exiting the RPS. A plasma can be generated in the process region 233, but a plasma may alternatively not be generated in the process region. In one embodiment, the excitation of the process gases or precursors is only to excite the process gases in the RPS 201 to react with the precursors in the process region 233.

[0027]

[0036] The processing chamber and the described tools are more fully described in patent application Ser. No. 12 / 210,940, filed Sep. 15, 2008, and patent application Ser. No. 12 / 210,982, filed Sep. 15, 2008, which are incorporated by reference herein to the extent not inconsistent with the claimed aspects and description herein.

[0028]

[0037] 2B-2C are side schematic views of one embodiment of a precursor flow process in a processing chamber and gas distribution assembly described herein. The gas distribution assembly for use in the processing chamber section 200 may be referred to as a dual channel showerhead (DCSH) or triple channel showerhead (TCSH) and is detailed in the embodiments described in Figures 3A-3E, 4, 5, 6, 7, 8A, 8B, and 9 herein. The dual or triple channel showerhead may allow for flowable deposition of dielectric materials and separation of precursors and processing fluids during processing. The showerhead may alternatively be utilized for etching processes that allow for separation of etchants outside of the reaction zone and limit interaction with chamber components.

[0029]

[0038] The precursors may be introduced into the distribution zone by first being introduced into an interior showerhead region 294 defined in the showerhead 225 by a first manifold 226 or top plate and a second manifold 227 or bottom plate. The manifold may be a perforated plate defining a plurality of apertures. The precursors in the interior showerhead region 294 may be flowed 295 into the processing region 233 through apertures 296 formed in the bottom plate. This flow path may be isolated from the rest of the process gases in the chamber, allowing the precursors to remain unreacted or substantially unreacted until they enter the processing region 233 defined between the substrate 255 and the bottom of the bottom plate 227. Once in the processing region 233, the precursors may react with the process gases. The precursors may be introduced into the interior showerhead region 294 defined in the showerhead 225 through side channels formed in the showerhead, such as gas inlets 322, 422, 522, 622, 722, 822, 922, as shown in the showerhead embodiments herein. The process gas may be in a plasma state including radicals from the RPS unit or radicals from a plasma generated in the first plasma region. Additionally, a plasma may be generated in the processing region.

[0030]

[0039] The processing gas may be delivered into the first plasma region 215 or an upper region defined by the faceplate 217 and the top of the showerhead 225. The processing gas may be plasma excited in the first plasma region 215 to generate the processing gas plasma and radicals. Alternatively, the processing gas may already be in a plasma state after passing through a remote plasma system before being introduced into the first plasma processing region 215 defined by the faceplate 217 and the top of the showerhead 225.

[0031]

[0040] The processing gas, including the plasma and radicals, can then be delivered to the processing region 233 for reaction with the precursors through channels, such as channels 290 formed through apertures in a showerhead plate or manifold. The processing gas passing through the channels can be fluidly isolated from the interior showerhead region 294 and can remain unreacted with the precursors passing through the interior showerhead region 294 as both pass through the showerhead 225. Once in the processing region, the processing gas and precursors can mix and react.

[0032]

[0041] In addition to the process gas and the dielectric material precursor, there may be other gases introduced at different times for different purposes. The process gas may be introduced to remove unwanted species from the chamber walls, the substrate, the deposited film and / or the film being deposited. The process gas may be excited in a plasma and then used to reduce or remove residual inclusions inside the chamber. In other disclosed embodiments, the process gas may be used without a plasma. If the process gas includes water vapor, it may be delivered using a mass flow meter (MFM), an injection valve, or a commercially available water vapor generator. The process gas may be introduced from the first process region through or bypassing the RPS unit and may be further excited in the first plasma region.

[0033]

[0042] Axis 292 of the opening of aperture 291 and axis 297 of the opening of aperture 296 may be parallel to one another or may be substantially parallel to one another. Alternatively, axis 292 and axis 297 may be at an angle from one another, such as from about 1° to about 80°, such as from about 1° to about 30°. Alternatively, each of the axes 292 may each be at an angle from one another, such as from about 1° to about 80°, such as from about 1° to about 30°, and each of the axes 297 may each be at an angle from one another, such as from about 1° to about 80°, such as from about 1° to about 30°.

[0034]

[0043] Each opening may be angled such that the opening has an angle of about 1° to about 80°, such as about 1° to about 30°, as shown for aperture 291 in Figure 2B. An opening axis 292 of aperture 291 and an opening axis 297 of aperture 296 may be perpendicular or substantially perpendicular to the surface of substrate 255. Alternatively, axis 292 and axis 297 may be at an angle from the substrate surface, such as less than about 5°.

[0035]

[0044] 2C is a partial schematic diagram of the processing chamber 200 and showerhead 225 showing the flow 295 of precursors from the inner region 294 into the processing region 233 through the apertures 296. This figure also shows an alternative embodiment showing the axes 297 and 297′ of the two apertures 296 at an angle to each other.

[0036]

[0045] FIG. 3A is a top perspective view of a dual channel showerhead 300. FIG. 3A may include one or more components described above with respect to FIG. 2A and may illustrate further details associated with the chamber. The dual channel showerhead 300 may be used to perform semiconductor processing steps, including deposition and / or etching steps of a stack of dielectric materials, as previously described. The dual channel showerhead 300 may be used in a semiconductor processing chamber, such as the chamber 200 described above, and may not include all of the components, such as the additional lid stack components described above, that are understood to be incorporated in some embodiments of the dual channel showerhead 300. In use, the dual channel showerhead 300 may have a substantially horizontal orientation such that the axes of the gas apertures formed therethrough may be perpendicular or substantially perpendicular to the plane of the substrate support (see substrate support 265 in FIG. 2A). FIG. 3B is an exploded perspective view of the dual channel showerhead 300. FIG. 3C is a cross-sectional side elevation view of the dual channel showerhead 300. FIGS. 3D and 3E are cross-sectional top views of the gas channel configuration of the dual channel showerhead 300.

[0037]

[0046] 3A-3E, the dual channel showerhead 300 generally includes a base 335 having an annular body 340, an upper plate 320, and a lower plate 325. In some embodiments, the lower plate 325 may be integrally formed with the annular body 340, while in other embodiments, the lower plate 325 may be a separate component. The annular body 340 may be a ring having an inner annular wall 301 located at an inner diameter, an outer annular wall 305 located at an outer diameter, an upper surface 315, and a lower surface 310. The upper surface 315 and the lower surface 310 define a thickness of the annular body 340. A conduit or annular temperature channel or recess may be defined within the annular body 340 and may be configured to receive a cooling fluid or a heating element that may be used to maintain or regulate the temperature of the annular body. For example, as shown in FIG. 3C, a conduit may be formed in the bottom surface 310 and a heating element 355 may be disposed therein. The heating element 355 and / or the cooling channels may extend around all or substantially all of the circumference of the annular body 340 .

[0038]

[0047] As shown in the disclosed embodiments, including the one depicted in FIG. 3D, one or more recesses and / or channels may be formed in or defined by the annular body. The annular body may include an upper recess 303 formed in the upper surface. The upper recess 303 may be an upper recess formed in the annular body 340. As shown in FIGS. 3B and 3C, a first fluid channel 306 may be defined in the upper surface 315 and may be located radially inward of the upper recess 303 in the annular body. The first fluid channel 306 may be annular in shape and may be formed the entire distance around the annular body 340. In the disclosed embodiment, the bottom of the upper recess 303 intersects with the outer wall of the first fluid channel 306. As best illustrated in FIGS. 3D and 3E, multiple ports 312 may be defined in the inner wall of the first fluid channel, as well as in the inner annular wall 301 of the annular body 340. The ports 312 may provide access between the first fluid channel and the interior region defined between the upper plate 320 and the lower plate 325. The ports 312 may be defined around the circumference of the channel 306 at specific intervals to facilitate distribution over the entire area of ​​the region defined between the upper and lower plates that may form the plenum 347. The spacing between the ports 312 may be constant or may vary at different positions to affect the flow of fluid into the region. In some embodiments, the length of each port 312 may be constant as shown in FIG. 3D. In other embodiments, one or more of the ports 312a may extend a greater distance into the interior of the plenum 347. 3E, four (of eight) evenly spaced ports 312a may extend further into the center of the plenum 347 (e.g., more than 30% of the radius of the channel 306, about 40% or more of the radius, about 50% or more of the radius, about 60% or more of the radius, about 70% or more of the radius, about 80% or more of the radius, or more) than the remaining ports 312. It will be understood that any number and / or configuration of ports may be used to achieve a desired gas distribution within the plenum 347. The radial inner and outer walls of the first fluid channel 306 may be of similar height or different heights.For example, the inner wall may be made higher than the outer wall to affect the distribution of fluid in the first fluid channel and to avoid or substantially avoid fluid flow over the inner wall of the first fluid channel.

[0039]

[0048] 3B and 3C again. A second fluid channel 308 may be defined in the upper surface 315 of the annular body, located radially outward of the first fluid channel 306. The second fluid channel 308 may be annular in shape, located radially outward from the first fluid channel 306, and concentric therewith. The second fluid channel 308 may also be located radially outward of the first upper recess 303. A second plurality of ports 314 may be defined in a portion of the annular body 340 that defines an outer wall of the first fluid channel 306 and an inner wall of the second fluid channel 308. The second plurality of ports 314 may be spaced apart at a predetermined distance around the second fluid channel 308 to provide fluid access to the first fluid channel 306 at several positions around the second fluid channel 308. In the process, precursors may be flowed from outside the process chamber into a feed channel or gas inlet 322 located on a side of the annular body 340. Fluid may flow into the second fluid channel 308, through the second plurality of ports 314 into the first fluid channel 306, through the first plurality of ports 312 into a plenum 347 defined between the upper and lower plates, and through a third aperture 375 located in the lower plate. Thus, fluid provided in this manner may be isolated, or substantially isolated, from all fluid provided into the first plasma region through the first aperture 360 ​​(formed in the upper plate 320) and the second aperture 365 (formed in the lower plate 325) until the fluids separately exit the lower plate 325. The fluid channels and fluid ports together may fluidly couple the gas inlet 322 to the plenum 347 to define a recursive flow path that evenly distributes the fluid within the plenum 347.

[0040]

[0049] The top plate 320 may be a disk-shaped body and may be coupled to the annular body 340 at the first upper recess 303 or other seat. Thus, the top plate 320 may cover the first fluid channel 306 to prevent or substantially prevent fluid flow from the top of the first fluid channel 306. The top plate may have a diameter selected to mate with the diameter of the upper recess 303, and the top plate may include a plurality of first apertures 360 formed therethrough. As seen in FIG. 3A, the first apertures 360 may be arranged in a polygonal pattern on the top plate 320 such that an imaginary line drawn through the center of the outermost first aperture 360 ​​defines, or substantially defines, a polygonal figure, which may be, for example, a six-sided polygon.

[0041]

[0050] The pattern may also feature a staggered array of about 5 to about 60 rows, e.g., about 15 to about 25 rows, of first apertures 360. Each row may have about 5 to about 20 first apertures 360 along the y-axis, with each row spaced apart by about 0.4 to about 0.7 inches. Each first aperture 360 ​​in a row may be offset from the previous aperture along the x-axis by about 0.4 to about 0.8 inches from the respective diameter. The first apertures 360 may be staggered from apertures in another row by about 0.2 to about 0.4 inches from the respective diameter along the x-axis. The first apertures 360 may be equally spaced from one another in each row.

[0042]

[0051] The top plate 320 may be removably secured to the annular body 340 of the base 335. For example, the periphery of the top plate 320 may include screws, bolts, clamps, and / or other fastening mechanisms 380. The fastening mechanisms 380 may extend through a thickness of the top plate 320 to at least a portion of the annular body 340. For example, the edge regions of the top plate 320 may be thinner than a central region of the top plate 320 such that an upper surface of the fastening mechanisms 380 is disposed below an upper surface of the central region of the top plate 320. The fastening mechanisms 380 may be used to removably secure the top plate 320 to the base 335, which may facilitate better cleaning of the dual channel showerhead 300 when the top plate 320 is removed, since a cleaning solution may be applied directly to the interior surface of the dual channel showerhead 300.

[0043]

[0052] The lower plate 325 may have a disk-shaped body with a number of second apertures 365 and third apertures 375 formed therethrough, as seen particularly in FIG. 3C. The lower plate 325 may have multiple thicknesses, with a defined thickness greater than the center thickness of the upper plate 320, and in the disclosed embodiment being at least about twice the thickness of the upper plate 320. The lower plate 325 may also have a diameter that mates with the diameter of the inner annular wall 301 of the annular body 340 at the first lower recess 302. The lower plate 325 may be formed separately from the annular body 340 and may be removably mated to the annular body 340 using one or more fastening mechanisms. In other embodiments, the lower plate 325 may be permanently bonded to the annular body 340, such as by brazing the components together. In other embodiments, the lower plate 325 may be integrally formed with the annular body 340. As previously mentioned, the lower plate 325 may have multiple thicknesses, for example, a first thickness of the plate may be a thickness through which the third aperture 375 extends. A second thickness, which is greater than the first thickness, may be a thickness of the plate around the second aperture 365. For example, the second aperture 365 may be defined by the lower plate 325 as a cylinder or spigot 327 extending upward toward the upper plate 320. In this manner, a channel may be formed between the first aperture and the second aperture that are fluidly isolated from each other. Additionally, the plenum 347 formed between the upper plate and the lower plate may be fluidly isolated from the channel formed between the first aperture and the second aperture. Thus, fluid flowing through the first aperture 360 ​​flows through the second aperture 365, and fluid in the plenum 347 between the plates flows through the third aperture 375, and the fluids are fluidly isolated from each other until they exit the bottom plate 325 through either the second aperture or the third aperture. This isolation can provide many benefits, including preventing the radical precursor from contacting the second precursor before reaching the reaction zone. Preventing gas interaction can minimize deposition in the chamber prior to the processing area where deposition is desired.

[0044]

[0053] The second apertures 365 may be arranged in a pattern aligned with the pattern of the first apertures 360 described above. In one embodiment, when the top plate 320 and the bottom plate 325 are placed one above the other, the axes of the first apertures 360 and the second apertures 365 are aligned. In the disclosed embodiment, the top plate and the bottom plate may be bonded together or directly glued. In either case, the plates may be bonded together such that the first apertures and the second apertures are aligned to form channels through the top plate and the bottom plate. The first apertures 360 and the second apertures 365 may have their respective axes parallel or substantially parallel to each other, e.g., the apertures 360, 365 may be concentric. Alternatively, the first apertures 360 and the second apertures 365 may have their respective axes arranged at an angle of about 1° to about 30° to each other. The bottom plate 325 may not have a second aperture 365 in the center.

[0045]

[0054] As previously discussed, the dual channel showerhead 300 is generally comprised of an annular body 340, an upper plate 320, and a lower plate 325. The lower plate 325 may be placed into the first lower recess 303 with the raised cylinder or spigot 327 facing the bottom surface of the upper plate 320, as shown in FIGURE 3B. The lower plate 325 may then be placed into the first lower recess 304 and rotatably oriented such that the axes of the first and second apertures 360, 365 may be aligned.

[0046]

[0055] The plurality of second apertures 365 and the plurality of third apertures 375 may form an alternating staggered arrangement. The third apertures 375 may be disposed between at least two of the second apertures 365 of the lower plate 325. Between each second aperture 365, there may be a third aperture 375 equally spaced between two second apertures 365. There may also be a number of third apertures 375 disposed around the center of the lower plate 325 in a hexagonal pattern, such as six third apertures, or a number of third apertures 375 forming other geometric shapes. There may not be a third aperture 375 formed in the center of the lower plate 325. There may also not be a third aperture 375 disposed between the peripheral second apertures 365 forming the vertices of the polygonal pattern of second apertures. Alternatively, there may be third apertures 375 located between the peripheral second apertures 365, and there may be additional third apertures 375 located outward from the peripheral second apertures 365 forming an outermost ring of apertures, for example as shown in FIG. 3C.

[0047]

[0056] Alternatively, the arrangement of the first and second apertures may form any other geometric pattern and may be distributed as rings of apertures located concentrically outward from one another and relative to a centrally located position on the plate. As an example, and without limiting the scope of the technology, FIG. 3A shows a pattern formed by apertures including concentric hexagonal rings extending outward from the center. Each outer ring may have the same number of apertures as the previous inner ring. In one embodiment, each concentric ring may have an additional number of apertures based on the geometry of each ring. In the example of a hexagonal polygon, each ring moving outward may have six more apertures than the ring directly inward, with the first inner ring having six apertures. If the first ring of apertures is located closest to the center of the top and bottom plates, the top and bottom plates may have more than one ring and may have from about 1 to about 50 rings of apertures depending on the geometric pattern of apertures used. Alternatively, the plate may have from about 2 to about 40 rings, or up to about 30 rings, about 20 rings, about 15 rings, about 12 rings, about 10 rings, about 9 rings, about 8 rings, about 7 rings, about 6 rings, etc., or fewer rings. In one example, there may be nine hexagonal rings in an exemplary top plate, as shown in FIG. 3A.

[0048]

[0057] The concentric rings of apertures may also be missing one of the concentric rings of apertures, or one of the rings of apertures extending outward may be removed from between the other rings. For example, referring to FIG. 3A, if the exemplary nine hexagonal rings are on the plate, the plate may instead have eight rings, but it may be ring 4 that is removed. In such an example, channels that may redistribute the gas flow of the fluid passing through the apertures may not be formed where the fourth ring would be. Rings may also have certain apertures removed from the geometric pattern. For example, referring again to FIG. 3A, the plate shown may be formed with a tenth hexagonal ring of apertures as the outermost ring. However, this ring may not include the apertures that would form the vertices of the hexagonal pattern, or other apertures within the ring.

[0049]

[0058] The first, second, and third apertures 360, 365, 375 may all be adapted to allow the passage of fluid therethrough. The first and second apertures 360, 365 may have a cylindrical shape, or alternatively may have various cross-sectional shapes, including conical, cylindrical, or a combination of shapes. In one embodiment, as shown in FIG. 3C, the first and second apertures may have a substantially cylindrical shape, and the third aperture may be formed by a series of cylinders with different diameters. For example, the third aperture may include three cylinders, with the diameter of the second cylinder being smaller than the diameter of the other cylinders. These and many other variations may be used to adjust the flow of fluid through the apertures. As shown, the third aperture 375 may include an inwardly tapered frustoconical shape that is joined to a cylindrical region that acts as a choke point in the center of the aperture. The choke point may transition to an outwardly tapered frustoconical shape and then to a larger cylindrical region, although other aperture profiles may be used in various embodiments.

[0050]

[0059] If the first and second apertures are all the same diameter, the flow of gas through the channels may not be uniform. When process gas flows into the processing chamber, the flow of gas may be such that a larger volume of gas preferentially flows through certain channels. Therefore, the diameter of certain apertures may be made smaller than other certain apertures so that the precursor flow is redistributed as the precursor flow is delivered to the first plasma region. The apertures may be selectively made smaller in diameter due to their relative location, such as near a baffle, such that the diameter of apertures located near the baffle may be made smaller to reduce the flow of process gas through those apertures. In one example, if nine hexagonal rings of first apertures are concentrically located in the plate, as shown in FIG. 3A, some or all of the apertures in a particular ring of apertures may be made smaller in diameter. For example, ring 4 may include a subset of first apertures having a smaller diameter than the other rings of first apertures. Alternatively, rings 2 through 8, rings 2 through 7, rings 2 through 6, rings 2 through 5, rings 2 through 4, rings 3 through 7, rings 3 through 6, rings 3 through 5, rings 4 through 7, rings 4 through 6, rings 2 and 3, rings 3 and 4, rings 4 and 5, rings 5 ​​and 6, etc., or some other combination of rings may reduce the aperture diameter for some or all of the apertures located in those rings.

[0051]

[0060] The dual-channel showerhead 300 can include a compressible gasket 385 that can be disposed between an upper plate 320 and a lower plate 325. For example, the gasket 385 can generally be disk-shaped and can be arranged so that the gasket 385 covers the upper part of the plenum 347. In certain embodiments, the annular body 340 can define a ledge disposed radially inwardly and / or above channels 306, 308 that support the bottom surface of the gasket 385. The gasket 385 can define a plurality of apertures 390 each having an axis aligned with the axis of each of the first plurality of apertures 360 and the second plurality of apertures 365 to define a flow path through the thickness of the dual-channel showerhead 300. The gasket 385 can be formed from a chemical-resistant compressible material. Suitable materials include, but are not limited to, thermoplastic plastics such as polytetrafluoroethylene (PTFE), Celazole® PBI, Semitron® ESD, and / or other compressible and chemical-resistant materials that can withstand a plasma chemical environment. The gasket 385 can have a thickness of from about 0.10 inches to 0.50 inches, from about 0.15 inches to 0.45 inches, from about 0.20 inches to 0.40 inches, from about 0.25 inches to 0.35 inches, from about 0.275 inches to about 0.325 inches, or from about 0.2875 inches to 0.3125 inches. When the upper plate 320 is fixed to the annular body 340, the gasket 385 can seal the upper part of the plenum 347 to fluidly isolate the plenum 347 and the third aperture 375 from the first aperture 360, the second aperture 365, and the aperture 390.

[0052]

[0061] The annular body 340 can define an isolation channel 324. For example, the isolation channel 324 can be formed in a top surface of the annular body 340 radially outward of the channels 306, 308 such that an upper portion of the isolation channel 324 is covered by the top plate 320 when the top plate 320 is disposed within the first recess 303. In operation, the isolation channel can receive, for example, an O-ring 326, or other isolation device. The O-ring 326 can provide a vacuum seal that separates the interior of the dual channel showerhead 300 from the remainder of the chamber.

[0053]

[0062] As mentioned above, in some embodiments, the bottom plate can be removably coupled to the annular body of the base. FIG. 4 is a cross-sectional side elevation view showing an embodiment of a dual channel showerhead 400 including a removable bottom plate 425. The dual channel showerhead 400 can include any feature or characteristic of the dual channel showerhead 300 and can be incorporated into any chamber in which a dual channel showerhead may be used, including any of the chambers previously described. For example, the dual channel showerhead 400 can include a base 435 having an annular body 440. The dual channel showerhead 400 can include an upper plate 420 defining a number of first apertures 460 and a lower plate 425 defining a second aperture 465 aligned with the first apertures 460. The upper plate 420 can be removably secured to the annular body 440. The lower plate 425 can also define a third aperture 475 fluidly isolated from the first apertures 460 and the second apertures 465. For example, the third aperture 475 may be fluidly coupled to the gas inlet 422 via one or more channels 406, 408 and / or the plenum 447. A gasket 485 may be disposed between the top plate 420 and the bottom plate 425 to fluidly isolate the plenum 447 and the third aperture 475 from the first aperture 460, the second aperture 465, and the aperture 490 (which may be formed through the gasket 485).

[0054]

[0063] The bottom plate 425 may include a flange 423 extending radially outward of an inner region of the bottom plate 425 that defines the second aperture 465 and the third aperture 475. The flange 423 may have an upper surface that is recessed relative to an upper surface of the first thickness of the bottom plate 425 and may seat on a bottom surface of the annular body 440. For example, the annular body 440 may define a recess that receives the flange 423, with an upper surface of the recess contacting an upper surface of the flange 423 and an outer surface of the recess contacting an outer surface of the flange 423. The bottom plate 425 may be removably coupled to the annular body 440 using a number of fasteners 424, such as screws, bolts, clamps, and / or other fastening mechanisms. By making the bottom plate 425 removable from the annular body 440, the inner region of the dual channel showerhead 400 may be more easily cleaned without the flow of cleaning fluids to the interior of the dual channel showerhead 400 being restricted by the various apertures. Additionally, by separating the bottom plate 425 from the annular body 440, it may be easier to machine intricate features in the dual channel showerhead 400.

[0055]

[0064] 5 is a cross-sectional side elevation view of one embodiment of a dual channel showerhead 500 in accordance with the present invention. The dual channel showerhead 500 may include any of the features or characteristics of the dual channel showerhead 300 or 400 and may be incorporated into any chamber in which a dual channel showerhead may be used, including any of the chambers previously described. For example, the dual channel showerhead 500 may include a base 535 having an annular body 540. The dual channel showerhead 500 may include an upper plate 520 defining a number of first apertures 560 and a lower plate 525 defining a second aperture 565 aligned with the first apertures 560. The lower plate 525 may also define a third aperture 575 fluidly isolated from the first apertures 560 and the second apertures 565. For example, the third aperture 575 may be fluidly coupled to a gas inlet 522 via one or more channels 506, 508 and / or a plenum 547. The top plate 520 and / or the bottom plate 525 may be removably secured to the annular body 540 as described in connection with Figures 3A-3E and 4. A gasket 585 may be disposed between the top plate 520 and the bottom plate 525 to fluidly isolate the plenum 547 and the third aperture 575 from the first aperture 560, the second aperture 565, and the aperture 590, which may be formed through the gasket 585.

[0056]

[0065] The gasket 585 may have a thickness that decreases as the radial distance from the center of the gasket 585 increases. That is, the inner region of the gasket 585 may be thicker than the peripheral region of the gasket 585. This may help to better seal the plenum 547 and the third aperture 575 from the first aperture 560, the second aperture 565, and the aperture 590 when the top plate 520 is secured to the annular body 540. For example, the compressive force applied by the fastening mechanism 580 is greater proximate the fastening mechanism 580 (e.g., near the peripheral region of the top plate 520). Thus, to better compress and seal the plenum 547, the gasket 585 may be thicker in the inner region of the gasket 585 in view of the lower degree of compression applied by the central portion of the top plate 520. The thickness transition between the inner and outer regions may be linear / angular, curved, and / or stepped to form two or more regions of different thickness. As shown, the gasket 585 has a curved thickness transition that varies with radial distance. In some embodiments, the center of the gasket 585 may be at least about 1.5 times the thickness of the peripheral region, at least about 2 times the thickness of the peripheral region, at least about 2.5 times the thickness of the peripheral region, at least about 3 times the thickness of the peripheral region, at least about 4 times the thickness of the peripheral region, at least about 5 times the thickness of the peripheral region, at least about 6 times the thickness of the peripheral region, at least about 7 times the thickness of the peripheral region, at least about 8 times the thickness of the peripheral region, at least about 9 times the thickness of the peripheral region, at least about 10 times the thickness of the peripheral region, or more.

[0057]

[0066] In some embodiments, the gasket may include a cylinder and / or spigots disposed on the upper and / or lower surfaces of the gasket. The spigots may provide a greater material thickness and / or thinner sidewalls, which may increase the amount of compression of the gasket to better seal the plenum from the first and second apertures. FIG. 6 is a cross-sectional side elevation view of one embodiment of a dual channel showerhead 600 in accordance with the present invention. The dual channel showerhead 600 may include any of the features or characteristics of the dual channel showerheads 300, 400, or 500 and may be incorporated into any chamber in which a dual channel showerhead may be used, including any of the chambers previously described. For example, the dual channel showerhead 600 may include a base 635 having an annular body 640. The dual channel showerhead 600 may include an upper plate 620 defining a number of first apertures 660 and a lower plate 625 defining a second aperture 665 aligned with the first apertures 660. The lower plate 625 may also define a third aperture 675 that is fluidly isolated from the first aperture 660 and the second aperture 665. For example, the third aperture 675 may be fluidly coupled to the gas inlet 622 via one or more channels 606, 608 and / or the plenum 647. The upper plate 620 and / or the lower plate 625 may be removably secured to the annular body 640 as described in connection with FIGS. 3A-3E and 4. A gasket 685 may be disposed between the upper plate 620 and the lower plate 625 to fluidly isolate the plenum 647 and the third aperture 675 from the first aperture 660, the second aperture 665, and the aperture 690 (which may be formed through the gasket 685).

[0058]

[0067] The bottom surface of the gasket 685 may include a number of cylinders or spigots 687 extending downwardly from the bottom surface. For example, the spigots 687 may extend downwardly and surround each aperture 690 formed through the thickness of the gasket 685 to partially define a fluid path formed by the first and second apertures through the thickness of the dual channel showerhead 600. In some embodiments, the height of each spigot 687 may be the same, while in other embodiments, the height of the spigots near the center of the gasket 685 may be higher than the height of the spigots 687 proximate the periphery of the gasket 685. The transition between spigots 687 of different heights may be linear, curvilinear, and / or stepped. In embodiments with linear and / or curvilinear transitions, the bottom surfaces of the individual spigots 687 may have variable heights. The graduated transition may include stages including a single row of spigots 687 and / or stages including multiple rows of spigots 687. In some embodiments, the height of each spigot 687 may be about 0.05 inches to 0.375 inches, about 0.1 inches to 0.35 inches, about 0.15 inches to 0.3 inches, or about 0.2 inches to 0.25 inches. Although spigots 687 are illustrated extending downward from a bottom surface of the gasket 685, in some embodiments, the gasket 685 may be inverted such that spigots 687 extend upward from a top surface of the gasket 685. The elastic modulus of the gasket 685 may be selected to prevent significant lateral deformation of the spigots 687 as they are compressed by the top plate 620.

[0059]

[0068] 7 is a cross-sectional side elevation view of one embodiment of a dual channel showerhead 700 in accordance with the present invention. The dual channel showerhead 700 may include any of the features or characteristics of the dual channel showerheads 300, 400, 500, or 600 and may be incorporated into any chamber in which a dual channel showerhead may be used, including any of the chambers previously described. For example, the dual channel showerhead 700 may include a base 735 having an annular body 740. The dual channel showerhead 700 may include an upper plate 720 defining a number of first apertures 760 and a lower plate 725 defining a second aperture 765 aligned with the first apertures 760. The lower plate 725 may also define a third aperture 775 fluidly isolated from the first apertures 760 and the second apertures 765. For example, the third aperture 775 may be fluidly coupled to the gas inlet 722 via one or more channels 706, 708 and / or plenum 747. The top plate 720 and / or bottom plate 725 may be removably secured to the annular body 740 as described in connection with Figures 3A-3E and 4. A gasket 785 may be disposed between the top plate 720 and bottom plate 725 to fluidly isolate the plenum 747 and the third aperture 775 from the first aperture 760, the second aperture 765, and the aperture 790 (which may be formed through the gasket 785).

[0060]

[0069] Both the top and bottom surfaces of the gasket 785 may include a number of cylinders or spigots 787 extending upwardly or downwardly from the respective surfaces of the gasket 785. For example, spigot 787a may extend upwardly from the top surface and surround each aperture 790 formed through the thickness of the gasket 785, and spigot 787b may extend downwardly from the bottom surface and surround each aperture 790 formed through the thickness of the gasket 785, such that the spigots 787 partially define the fluid pathways formed by the first and second apertures through the thickness of the dual channel showerhead 700. In some embodiments, the height of each spigot 787 may be the same, while in other embodiments, the height of the spigots near the center of the gasket 785 may be greater than the height of the spigots 787 proximate the periphery of the gasket 785. In some embodiments, only the height of spigot 787a or 787b may vary while spigots on other surfaces of gasket 785 have a constant height across the surface area of ​​gasket 785. The transition between spigots 787 of different heights may be linear, curvilinear, and / or stepped. In embodiments with linear and / or curvilinear transitions, the top or bottom surfaces of individual spigots 787 may have variable heights. The stepped transitions may include stages that include a single row of spigots 787 and / or stages that include multiple rows of spigots 787. In some embodiments, the height of each spigot 787 may be about 0.05 inches to 0.375 inches, about 0.1 inches to 0.35 inches, about 0.15 inches to 0.3 inches, or about 0.2 inches to 0.25 inches. In some embodiments, spigot 787a and spigot 787b may have the same height, while in other embodiments, spigot 787a may be shorter or taller than spigot 787b.

[0061]

[0070] In some embodiments, the dual channel showerhead may omit the use of a compressible gasket entirely. FIG. 8A is a cross-sectional side elevation view of one embodiment of a dual channel showerhead 800 in accordance with the present invention. The dual channel showerhead 800 may include any of the features or characteristics of the dual channel showerheads 300, 400, 500, 600, or 700 and may be incorporated into any chamber in which a dual channel showerhead may be used, including any of the chambers previously described. For example, the dual channel showerhead 800 may include a base 835 having an annular body 840. The dual channel showerhead 800 may include an upper plate 820 defining a number of first apertures 860 and a lower plate 825 defining a second aperture 865 aligned with the first apertures 860. The lower plate 825 may also define a third aperture 875 fluidly isolated from the first apertures 860 and the second apertures 865. For example, the third aperture 875 may be fluidly coupled to the gas inlet 822 via one or more channels 806, 808 and / or plenum 847. The top plate 820 and / or the bottom plate 825 may be removably secured to the annular body 840 as described in connection with Figures 3A-3E and 4.

[0062]

[0071] The first aperture 860 may extend beyond the bottom surface of the top plate 820, thereby forming a number of raised cylinders or spigots 823. There may be gaps between each of the spigots 823. The bottom plate 825 may include a number of receptor cups 824 extending upwardly from the top surface of the bottom plate 825. The receptor cups 824 may be axially aligned with the spigots 823 and may have an inner diameter sized to substantially match the outer diameter of each of the spigots 823 such that each spigot 823 may nest internally with and / or otherwise be coupled to each of the receptor cups 824, with the inner wall of the receptor cup 824 contacting or nearly contacting the outer wall of the spigot 823. If the walls of the receptor cup 824 and spigot 823 are close enough that no or only a small gap is formed between the walls, a gasket may not be necessary because, under normal process pressures / conditions, a high resistance area may be formed that would prevent process gases from flowing through the gap.

[0063]

[0072] 8B is a cross-sectional side elevation view of one embodiment of a dual channel showerhead 800b in accordance with the present invention. The dual channel showerhead 800b may be identical to the dual channel showerhead 800, except that at least a portion of the upper recess 803 formed in the annular body 840b of the dual channel showerhead 800b may be defined by tapered walls (rather than vertical walls as provided in the dual channel showerhead 800). Similarly, the bottom surface of the top plate 820b may have a tapered periphery 827 that may have a degree of taper that matches the degree of taper of the upper recess 803. These tapered surfaces may allow the top plate 820b to self-align within the annular body 840 before the components are secured together. The large tapered mating surfaces formed between the components may allow the components to be easily aligned without the use of other small alignment features, such as pins and outlet connections, that may be easily damaged when a user attempts to align the alignment features during assembly of the dual channel showerhead.

[0064]

[0073] 9 is a cross-sectional side elevation view of one embodiment of a dual channel showerhead 900 in accordance with the present invention. The dual channel showerhead 900 may include any of the features or characteristics of the dual channel showerheads 300, 400, 500, 600, 700, or 800 and may be incorporated into any chamber in which a dual channel showerhead may be used, including any of the chambers previously described. For example, the dual channel showerhead 900 may include a base 935 having an annular body 940. The dual channel showerhead 900 may include an upper plate 920 defining a number of first apertures 960 and a lower plate 925 defining a second aperture 965 aligned with the first apertures 960. The lower plate 925 may also define a third aperture 975 fluidly isolated from the first apertures 960 and the second apertures 965. For example, the third aperture 975 may be fluidly coupled to the gas inlet 922 via one or more channels 906, 908 and / or plenum 947. The top plate 920 and / or bottom plate 925 may be removably secured to the annular body 940 as described in connection with Figures 3A-3E and 4.

[0065]

[0074] The first aperture 960 may extend beyond the bottom surface of the top plate 920, thereby forming a number of raised cylinders or spigots 923. There may be gaps between each of the spigots 923. The dual channel showerhead 900 may include a number of seals 995 disposed at an interface between the bottom ends of each of the plurality of spigots 923 and the top surface of the bottom plate 925. For example, the seals 995 may be generally annular in shape and may be approximately the same size as the diameter of each of the spigots 923. The seals 995 may be formed from a chemically resistant compressible material. In some embodiments, the seals 995 may include elastomers, thermoplastic materials, and / or other chemically resistant materials. When the top plate 920 is secured to the annular body 940, the seals 995 may be compressed to seal the plenum 947 and the third aperture 975 from the first and second apertures.

[0066]

[0075] 10 illustrates steps of an exemplary method 1000 of semiconductor processing according to some embodiments of the present technique. Method 1000 may be performed in a variety of processing chambers, including the processing system 200 described above, which may include a dual channel showerhead including removable top and / or bottom plates according to embodiments of the present technique, such as dual channel showerheads 300, 400, 500, 600, 700, 800, and 900. Method 1000 may include a number of optional steps that may or may not be specifically associated with some embodiments of the method according to the present technique.

[0067]

[0076] Method 1000 may include processing methods that may include steps for forming a hardmask film or other deposition and / or etching steps. The method may include optional steps prior to the start of method 1000, or the method may include additional steps. For example, method 1000 may include steps performed in a different order than shown. In some embodiments, method 1000 may include, in step 505, flowing a first gas into the processing chamber through a first plurality of apertures formed in an upper plate of the showerhead and a second plurality of apertures formed in a lower plate of the showerhead. For example, the first gas may be CF 4 , N.H. 3 , N.F. 3 , Ar, He, H 2 O, H 2 , O 2The second gas may include, but is not limited to, a plasma generating gas such as a plasma generating gas, ... The method 1000 may include, in step 1015, removing a volume of material on a substrate disposed in a processing chamber.

[0068]

[0077] In the above description, for purposes of explanation, numerous details are set forth in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that certain embodiments may be practiced without some of these details or with additional details.

[0069]

[0078] Although several embodiments have been disclosed, it will be recognized by those skilled in the art that various modifications, alternative constructions, and equivalents may be used without departing from the spirit of the disclosed embodiments. Moreover, in order to avoid unnecessarily obscuring the present invention, some well-known processes and elements have not been described. Thus, the above description should not be construed as limiting the scope of the present invention.

[0070]

[0079] Where a range of values ​​is provided, it is understood that each intervening value between the upper and lower limit of that range, to the smallest fraction of the unit of the lower limit, is also specifically disclosed, unless the context clearly dictates otherwise. Each narrower range between any stated value or intervening value in a stated range and any other stated or intervening value in that stated range is also included. The upper and lower limits of these smaller ranges may be independently included or excluded, and each range in which either or both limits are included in the smaller ranges is also included within the invention, subject to any specifically excluded limit in the stated range. Where a stated range includes one or both of the limits, ranges excluding either or both of those included limits are also included.

[0071]

[0080] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural references unless the context clearly dictates otherwise. Thus, for example, reference to an "aperture" includes a plurality of such apertures, reference to a "plate" includes a reference to one or more plates and equivalents thereof known to those skilled in the art, and so forth.

[0072]

[0081] Additionally, as used in this specification and the claims that follow, the terms "comprise," "comprising," "contain," "containing," "include," and "including" specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, operations, or groups.

Claims

1. 1. A dual channel shower head, comprising: a top plate defining a first plurality of apertures; a base including a lower plate, the lower plate defining a second plurality of apertures and a third plurality of apertures; each of the first plurality of apertures is fluidly coupled to a respective one of the second plurality of apertures to define a fluid path extending from a top surface of the showerhead to a bottom surface of the showerhead; the base defines a gas inlet fluidly coupled to the third plurality of apertures; a base, the base being removably coupled to the top plate using one or more fastening mechanisms; a compressible gasket fluidly isolating the first and second plurality of apertures from the third plurality of apertures, the compressible gasket being disposed between the upper plate and the lower plate; Equipped with one or both of the top surface of the gasket and the bottom surface of the gasket include a plurality of spigots projecting outwardly from a body of the gasket, each of the plurality of spigots being vertically aligned with a respective one of the first plurality of apertures. Dual channel shower head.

2. 10. The dual channel showerhead of claim 1, wherein each of the third plurality of apertures is fluidly isolated from the first plurality of apertures and the second plurality of apertures.

3. 10. The dual channel showerhead of claim 1, wherein the base defines a plenum fluidly coupling the gas inlet to each of the third plurality of apertures.

4. 4. The dual channel showerhead of claim 3, wherein the base defines a recursive flow path fluidly coupling the gas inlet to the plenum.

5. The gasket comprises polytetrafluoroethylene (PTFE).

10. The dual channel showerhead of claim 1.

6. The gasket has a thickness that decreases with increasing radial distance from a center of the gasket.

10. The dual channel showerhead of claim 1.

7. 10. The dual channel showerhead of claim 1, wherein the bottom plate is removably coupled to the base with one or more fasteners.

8. 10. The dual channel showerhead of claim 1, wherein the gasket has a thickness that decreases with increasing radial distance from a center of the gasket.

9. 1. A dual channel shower head, comprising: a top plate defining a first plurality of apertures; a base including a lower plate, the lower plate defining a second plurality of apertures and a third plurality of apertures; each of the first plurality of apertures is fluidly coupled to a respective one of the second plurality of apertures to define a fluid path extending from a top surface of the showerhead to a bottom surface of the showerhead; the base defines a gas inlet fluidly coupled to the third plurality of apertures; the base is removably coupled to the top plate using one or more fastening mechanisms; Equipped with a bottom surface of the top plate including a plurality of spigots extending downwardly from the bottom surface, each of the plurality of spigots defining at least a portion of a respective one of the first plurality of apertures.

10. the base defines a seat for receiving the top plate; 10. The dual channel showerhead of claim 9.

11. an outer region of the seat tapers upwardly toward a periphery of the seat; the bottom surface of the upper plate has a tapered periphery; 11. The dual channel showerhead of claim 10, wherein a degree of taper of an outer region of the seat matches a degree of taper of a periphery of a bottom surface of the seat.

12. The showerhead including a plurality of seals, each of the plurality of seals disposed at an interface between a bottom end of each of the plurality of spigots and an upper surface of the lower plate.

10. The dual channel showerhead of claim 9.

13. The lower plate having an upper surface including a plurality of receptor cups extending upwardly from said upper surface, each of said receptor cups receiving a respective one of said plurality of spigots.

10. The dual channel showerhead of claim 9.

14. each of the first plurality of apertures and each of the second plurality of apertures are generally cylindrical; 10. The dual channel showerhead of claim 9.

15. an inner wall of each of the third plurality of apertures tapers inwardly to a choke point located within a central portion of the respective aperture; 10. The dual channel showerhead of claim 9.

16. the base includes a heating coil extending at least partially around a circumference of the base; 10. The dual channel showerhead of claim 9.

17. A method for processing a substrate, comprising the steps of: flowing a first gas into the processing chamber through a first plurality of apertures formed in an upper plate of the showerhead and a second plurality of apertures formed in a lower plate of the showerhead; flowing a second gas into the processing chamber through a gas inlet formed in a base of the showerhead and through a third plurality of apertures formed in the lower plate; the top plate is removably coupled to the base using one or more fastening mechanisms; and flowing a second gas into the processing chamber. removing a quantity of material from a substrate disposed in the processing chamber; Including, A method according to claim 1, wherein a bottom surface of the top plate includes a plurality of spigots extending downwardly from the bottom surface, each of the plurality of spigots defining at least a portion of a respective one of the first plurality of apertures.

18. 20. The method of claim 17, wherein the showerhead comprises a compressible gasket disposed between the upper plate and the lower plate.

19. 20. The method of claim 17, wherein flowing the second gas comprises introducing a precursor into the plenum fluidly coupled to each of the third plurality of apertures via a recursive flow path extending between the gas inlet and a plenum.

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