Liquid crystal display device

Abstract

To provide a liquid crystal display device having high visibility and high image quality by eliminating color irregularity.SOLUTION: A light-shielding layer is selectively provided so as to overlap with a contact hole for electrical connection to a source region or a drain region of a thin film transistor. Alternatively, by providing an opening portion of a colored layer (color filter) with an opening so as to overlap with the contact hole, uneven alignment of liquid crystal molecules does not influence display, and a liquid crystal display having high image quality can be provided.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to an active matrix liquid crystal display device.

Background Art

[0002] Conventionally, an active matrix liquid crystal display device using active elements such as thin film transistors (TFTs) has been known. Since the active matrix liquid crystal display device can have a high pixel density, is small and lightweight, and has low power consumption, it has been developed as one of the flat panel displays to replace CRTs, such as monitors for personal computers, liquid crystal televisions, and monitors for car navigation.

[0003] A liquid crystal display device includes a substrate (active matrix substrate) on which a pixel portion including a plurality of thin film transistors (TFTs), wirings, a first electrode (pixel electrode), etc. is formed, and a second electrode (counter electrode), a light shielding layer (black matrix), and a coloring layer (color filter), etc. are formed. The substrate (counter substrate) is bonded together, liquid crystal is encapsulated therebetween, and the liquid crystal molecules are aligned by an electric field applied between the pixel electrode and the counter electrode, and display is performed by controlling the amount of light from a light source.

[0003]

[0004]

[0004] When displaying on a liquid crystal display device, if the alignment of liquid crystal molecules is disturbed, high-definition image display cannot be achieved. In order to align the liquid crystal molecules, it is necessary to equalize (flatten) the distance (cell gap) between the pixel electrode and the counter electrode. As a method therefor, for example, there is a method of forming an insulating film by a coating method or the like as a flattening film (see Patent Document 1). Described in Patent Document 1 The obtained organic film is an organic insulating film for planarization and is an acrylic-based transparent organic film. As shown in the figure From the surface and the like, when an organic film is used, since the film thickness of the organic film is thick, the contact hole becomes deep.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] As described in Patent Document 1, the film thickness of the interlayer film used for planarization is relatively thick When the film thickness of the interlayer film is thick, the contact hole for forming the wiring that electrically connects the pixel electrode and the thin film transistor becomes deep. When the contact hole becomes deep inevitably, the distance (cell gap) between the pixel electrode and the counter electrode also becomes long. Therefore, at the location where the contact hole is formed, the thickness of the liquid crystal layer becomes thick by the film thickness of the interlayer film Therefore, the thickness of the liquid crystal layer is significantly different between the location where the contact hole is formed and the location where it is not formed. That is, around the location where the contact hole is formed, the alignment of the liquid crystal molecules is likely to be disturbed. In particular, at the edge of the contact hole, the interlayer film is inclined so that the alignment of the liquid crystal molecules is most likely to be disturbed. When the alignment of the liquid crystal molecules is disturbed, color unevenness occurs in the liquid crystal display. Therefore, an object of the present invention is to provide a liquid crystal display device that eliminates color unevenness, has high visibility, and high image quality. When the alignment of the liquid crystal molecules is disturbed, color unevenness occurs in the liquid crystal display. Therefore, an object of the present invention is to provide a liquid crystal display device that eliminates color unevenness, has high visibility, and high image quality.

[0007] Therefore, an object of the present invention is to provide a liquid crystal display device that eliminates color unevenness, has high visibility, and high image quality. is the purpose.

[0008] In addition, the present invention aims to provide a high-quality liquid crystal display device that eliminates color unevenness and has a high aperture ratio. To achieve this object.

Means for Solving the Problems

[0009] The liquid crystal display device of the present invention includes a thin film transistor, a conductive layer electrically connected to the thin film transistor, an insulating film provided on the conductive layer and having a contact hole, and a pixel electrode provided on the insulating film having the conductive layer and the contact hole and electrically connected to the conductive layer through the contact hole, and a light-shielding layer provided in at least a region overlapping the edge of the contact hole. , and is characterized by having. The liquid crystal display device of the present invention includes a thin film transistor, a conductive layer electrically connected to the thin film transistor, an insulating film provided on the conductive layer and having a contact hole, and a pixel electrode provided on the insulating film having the conductive layer and the contact hole and electrically connected to the conductive layer through the contact hole, and a colored layer having an opening, and the opening of the colored layer is provided in at least a region overlapping the edge of the contact hole. , and is characterized by being. The liquid crystal display device of the present invention includes a thin film transistor, a conductive layer electrically connected to the thin film transistor, an insulating film provided on the conductive layer and having a contact hole, and a pixel electrode provided on the insulating film having the conductive layer and the contact hole and electrically connected to the conductive layer through the contact hole, and a colored layer having an opening, and a light-shielding layer provided in at least a region overlapping the edge of the contact hole, and the opening of the colored layer is provided in at least a region overlapping the edge of the contact hole.

[0010] The liquid crystal display device of the present invention includes a thin film transistor, a conductive layer electrically connected to the thin film transistor, an insulating film provided on the conductive layer and having a contact hole, and a pixel electrode provided on the insulating film having the conductive layer and the contact hole and electrically connected to the conductive layer through the contact hole, and a colored layer having an opening, and a light-shielding layer provided in at least a region overlapping the edge of the contact hole, and the opening of the colored layer is provided in at least a region overlapping the edge of the contact hole. The liquid crystal display device of the present invention includes a thin film transistor, a conductive layer electrically connected to the thin film transistor, an insulating film provided on the conductive layer and having a contact hole, and a pixel electrode provided on the insulating film having the conductive layer and the contact hole and electrically connected to the conductive layer through the contact hole, and a colored layer having an opening, and the opening of the colored layer is provided in at least a region overlapping the edge of the contact hole. The liquid crystal display device of the present invention includes a thin film transistor, a conductive layer electrically connected to the thin film transistor, an insulating film provided on the conductive layer and having a contact hole, and a pixel electrode provided on the insulating film having the conductive layer and the contact hole and electrically connected to the conductive layer through the contact hole, and a colored layer having an opening, and the opening of the colored layer is provided in at least a region overlapping the edge of the contact hole. The liquid crystal display device of the present invention includes a thin film transistor, a conductive layer electrically connected to the thin film transistor, an insulating film provided on the conductive layer and having a contact hole, and a pixel electrode provided on the insulating film having the conductive layer and the contact hole and electrically connected to the conductive layer through the contact hole, and a colored layer having an opening, and a light-shielding layer provided in at least a region overlapping the edge of the contact hole, and the opening of the colored layer is provided in at least a region overlapping the edge of the contact hole. , and is characterized by being provided.

[0011] The liquid crystal display device of the present invention includes a thin film transistor, a conductive layer electrically connected to the thin film transistor, an insulating film provided on the conductive layer and having a contact hole, and a pixel electrode provided on the insulating film having the conductive layer and the contact hole and electrically connected to the conductive layer through the contact hole, and a colored layer having an opening, and a light-shielding layer provided in at least a region overlapping the edge of the contact hole, and the opening of the colored layer is provided in at least a region overlapping the edge of the contact hole. The liquid crystal display device of the present invention includes a thin film transistor, a conductive layer electrically connected to the thin film transistor, an insulating film provided on the conductive layer and having a contact hole, and a pixel electrode provided on the insulating film having the conductive layer and the contact hole and electrically connected to the conductive layer through the contact hole, and a colored layer having an opening, and a light-shielding layer provided in at least a region overlapping the edge of the contact hole, and the opening of the colored layer is provided in at least a region overlapping the edge of the contact hole. The liquid crystal display device of the present invention includes a thin film transistor, a conductive layer electrically connected to the thin film transistor, an insulating film provided on the conductive layer and having a contact hole, and a pixel electrode provided on the insulating film having the conductive layer and the contact hole and electrically connected to the conductive layer through the contact hole, and a colored layer having an opening, and a light-shielding layer provided in at least a region overlapping the edge of the contact hole, and the opening of the colored layer is provided in at least a region overlapping the edge of the contact hole. The liquid crystal display device of the present invention includes a thin film transistor, a conductive layer electrically connected to the thin film transistor, an insulating film provided on the conductive layer and having a contact hole, and a pixel electrode provided on the insulating film having the conductive layer and the contact hole and electrically connected to the conductive layer through the contact hole, and a colored layer having an opening, and a light-shielding layer provided in at least a region overlapping the edge of the contact hole, and the opening of the colored layer is provided in at least a region overlapping the edge of the contact hole. The liquid crystal display device of the present invention includes a thin film transistor, a conductive layer electrically connected to the thin film transistor, an insulating film provided on the conductive layer and having a contact hole, and a pixel electrode provided on the insulating film having the conductive layer and the contact hole and electrically connected to the conductive layer through the contact hole, and a colored layer having an opening, and a light-shielding layer provided in at least a region overlapping the edge of the contact hole, and the opening of the colored layer is provided in at least a region overlapping the edge of the contact hole. , and is characterized by being provided.

[0012] In the above configuration, the light-shielding layer is a light-shielding metal film, a resin film in which a pigment or a dye is dispersed and is characterized by this.

[0013] In the above configuration, the insulating film is characterized by being a resin film.

[0014] The liquid crystal display device of the present invention is characterized in that a portion where the alignment of liquid crystal molecules is disturbed does not function as a display portion and is characterized by this.

Effects of the Invention

[0015] In the liquid crystal display device of the present invention, a light-shielding layer is selectively formed so as to hide contact holes and a display without color unevenness can be provided.

[0016] In the liquid crystal display device of the present invention, a color filter is selectively removed so as not to reflect the disturbance of the alignment of liquid crystal molecules in the contact hole portion and a display without color unevenness can be provided. and a display without color unevenness can be provided.

Brief Description of the Drawings

[0017]

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[0018] Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings. The present invention may be practiced in many different ways without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the form and details of the present invention may be modified in various ways without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the present embodiment.

[0019] (Embodiment 1) In this embodiment, a configuration of a liquid crystal display device using the present invention will be described.

[0020] There are two main ways to prevent areas with distorted liquid crystal molecular orientation from functioning as a display. One is to provide a light-shielding layer to hide the parts where the alignment of the liquid crystal molecules is disturbed. The other is a structure in which no color filter is provided in the area where the alignment of the liquid crystal molecules is disturbed. be.

[0021] The structure of providing a light-shielding layer to hide the parts where the alignment of the liquid crystal molecules is disturbed is a round type and a dot type. The round type covers the entire contact hole, while the doughnut type covers only the A structure in which a portion excluding the central portion of the contact hole is covered with a light shielding layer. In the donut shape, it is preferably shaped to cover at least the edge of the contact hole. Note that the edge of the contact hole refers to the region where the insulating film is inclined in the contact hole.

[0022] When the light shielding layer is formed in a circular shape, since it covers the entire contact hole, it is possible to hide the entire portion where the alignment of the liquid crystal molecules is disturbed. By adopting this configuration, a display with no color unevenness and a high aperture ratio can be manufactured. Further, since this circular light shielding layer can be formed by the same process as the process of forming the light shielding layer on the wiring portion, there is no increase in the number of processes, and there is no need to use a complicated process.

[0023] When the light shielding layer is formed in a donut shape, since it covers the edge of the contact hole, that is, the region where the insulating film is inclined in the contact hole, it is possible to hide the alignment disturbance at the edge of the contact hole, which is the portion where the alignment of the liquid crystal molecules is most likely to be disturbed. In the portion other than the edge of the contact hole, since there is almost no change in the thickness of the liquid crystal layer, it is considered that the alignment of the liquid crystal molecules is not disturbed in that portion. By adopting this configuration, a display with no color unevenness and a high aperture ratio can be manufactured. Further, since this donut-shaped light shielding layer can be formed by the same process as the process of forming the light shielding layer on the wiring portion, there is no increase in the number of processes, and there is no need to use a complicated process. Note that in this specification, the shape of the light shielding layer is described as "circular" and "donut shape", but it can be appropriately changed according to the shape of the contact hole. That is, any shape can be used as long as it is provided with the intention of covering the contact hole. It may be, for example, a circle, an ellipse, a square, a rectangle, a triangle, etc.

[0024] As a configuration in which a color filter is not provided in a portion where the alignment of liquid crystal molecules is disordered, there are a circular shape and a donut shape. The circular shape is a configuration in which a color filter is not provided on the entire upper part of the contact hole, and the donut shape is a configuration in which a color filter is not provided above the edge of the contact hole, that is, in the region where the insulating film is inclined in the contact hole.

[0025] When removing the color filter in a circular shape, since there is no color filter in the entire contact hole, the thickness of the liquid crystal layer is greatly different, and it reflects the portion where the alignment of liquid crystal molecules is disordered and does not become a configuration. By adopting this configuration, a display with no color unevenness and a high aperture ratio can be produced. In addition, the configuration of removing the color filter in a circular shape does not increase the number of steps, nor is it necessary to use a complicated process.

[0026] When removing the color filter in a donut shape, the color filter in the edge of the contact hole, that is, in the region where the insulating film is inclined in the contact hole, is removed. In the portion other than the edge of the contact hole, since there is almost no change in the thickness of the liquid crystal layer, it is considered that the alignment of liquid crystal molecules is not disordered in that portion. By adopting this configuration, a display with no color unevenness and a high aperture ratio can be produced. In addition, the configuration of removing the color filter in a donut shape does not increase the number of steps, nor is it necessary to use a complicated process. Note that, in this specification, although the shape of the color filter is described as "circular shape" and "donut shape", it can be appropriately changed according to the shape of the contact hole. That is, the contact hole shape can be appropriately changed according to the shape of the contact hole. That is, the contact hole ​​​​​​​​ Any shape may be used as long as it is removed with the intention of removing the color filter in the overlapping region with the rut, and examples include a circle, an ellipse, a square, a rectangle, a triangle, etc.

[0027] (Embodiment 2) In this embodiment, a liquid crystal display device in which a light-shielding layer is selectively formed will be described with reference to FIGS. 1 and 2.

[0028] FIG. 1(B) is a top view of the liquid crystal display device to which the present invention is applied, as viewed from the counter substrate side. The active matrix substrate has a thin film transistor, a wiring layer electrically connected to the thin film transistor, an insulating film, a pixel electrode, an alignment film, etc. formed on the substrate. The counter substrate bonded to the active matrix substrate has a light-shielding layer, a counter electrode, an alignment film, etc. formed on the substrate. In FIG. 1(B), the gate line 151, the source line 152, the contact hole 103, the semiconductor layer 154 of the thin film transistor, the first light-shielding layer 108, and the second light-shielding layer 109 are shown, and the others are omitted.

[0029] As shown in FIG. 1(B), as the light-shielding layer, a first light-shielding layer 108 formed in a region corresponding to the gate line 151 and the source line 152, and a second light-shielding layer 109 formed in a region corresponding to the contact hole 103 in the source region or the drain region of the thin film transistor are formed.

[0030] FIG. 1(A) is an enlarged view of the contact hole portion, and is a cross-sectional view taken along A-A' in FIG. 1(B). The configuration of the active matrix substrate of this embodiment will be described below.

[0031] A thin film transistor 101 is formed on a substrate 100. As the substrate 100, in addition to glass substrates such as aluminosilicate glass, barium borosilicate glass, and quartz glass, substrates made of plastics represented by PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PES ( polyethersulfone), polypropylene, and synthetic resins represented by acrylic can be used. The thin film transistor 101 can be of any type such as top gate type, bottom gate type, channel etch type, or channel protection type. In FIG. 1(A), a channel etch type transistor is illustrated.

[0032] An insulating film 102 is formed on the thin film transistor 101, and a contact hole 103 for electrically connecting to the thin film transistor 101 is formed. The insulating film 102 can be formed using an organic resin film, an inorganic insulating film, or an insulating film containing a Si-O-Si bond formed using a siloxane-based material as a starting material (siloxane-based insulating film). Here, siloxane refers to a substance in which a skeletal structure is composed of a bond between silicon (Si) and oxygen (O), and at least an organic group containing hydrogen (e.g., alkyl group, aryl group) is used as a substituent . Also, a fluoro group may be used as a substituent. Or, at least an organic group containing hydrogen and a fluoro group may be used as substituents. Also, a low dielectric constant material may be used for the insulating film.

[0033] Note that it is also possible to form the contact hole 103 perpendicular to the substrate. However, in order to improve the step coverage when forming the pixel electrode 104 in a later process, as shown in FIG. 1(A), the contact hole 103 is opened such that the edge thereof is inclined. is preferred. Therefore, in this specification, the contact hole is assumed to have an inclined portion , and the inclined portion is referred to as the edge of the contact hole.

[0034] A pixel electrode 104 is formed so as to cover the thin film transistor 101 and the insulating film 102. . The pixel electrode 104 is electrically connected to the exposed drain electrode 105b of the thin film transistor 101.

[0035] When manufacturing a reflective liquid crystal display device, a reflective metal can be used as the pixel electrode 104. When manufacturing a transmissive liquid crystal display device, indium tin oxide (ITO) obtained by mixing tin oxide with indium oxide, indium tin silicon oxide (ITSO) obtained by mixing silicon oxide with indium tin oxide (ITO), indium zinc oxide (IZO) obtained by mixing zinc oxide with indium oxide, zinc oxide (ZnO), or tin oxide (S nO ), etc. can be used. When manufacturing a transflective liquid crystal display device, a reflective metal is used as the pixel electrode in the reflective region, and a light-transmissive material (for example, indium tin oxide (ITO) obtained by mixing tin oxide with indium oxide, indium tin silicon oxide (ITSO) obtained by mixing silicon oxide with indium tin oxide (ITO), indium zinc oxide (IZO) obtained by mixing zinc oxide with indium oxide, zinc oxide (ZnO), or tin oxide (S nO ), etc.) can be used in the transmissive region. 2 ) etc. can be used. In the case of manufacturing a transflective liquid crystal display device, a reflective metal is used as the pixel electrode in the reflective region, and a light-transmissive material (for example, indium tin oxide (ITO) obtained by mixing tin oxide with indium oxide, indium tin oxide (ITO) mixed with silicon oxide to form indium tin silicon oxide (ITSO), indium zinc oxide (IZO) obtained by mixing zinc oxide with indium oxide, zinc oxide (ZnO), or tin oxide (S nO ), etc.) can be used in the transmissive region. In the case of manufacturing a transflective liquid crystal display device, a reflective metal is used as the pixel electrode in the reflective region, and a light-transmissive material (for example, indium tin oxide (ITO) obtained by mixing tin oxide with indium oxide, indium tin silicon oxide (ITSO) obtained by mixing silicon oxide with indium tin oxide (ITO), indium zinc oxide (IZO) obtained by mixing zinc oxide with indium oxide, zinc oxide (ZnO), or tin oxide (S nO 2 ) etc.) can be used.

[0036] An alignment film 106 is formed on the pixel electrode 104. A polyimide resin or the like can be used for the alignment film 106.

[0037] Next, the configuration of the counter substrate of the present embodiment will be described.

[0038] A first light-shielding layer 108 and a second light-shielding layer 109 are formed in contact with the substrate 107. The first light-shielding layer 108 is formed so as to cover the source wiring and cover a part of the source electrode 105a formed in that way. The second light-shielding layer 109 is formed in accordance with the contact hole 103 on the substrate 107. As the substrate 107, in addition to glass substrates such as aluminoborosilicate glass, barium borosilicate glass, and quartz glass, substrates made of synthetic resins typified by PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PES (polyethersulfone), and polypropylene, and substrates made of synthetic resins typified by acrylic can be used. PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PES (polyethersulfone), and polypropylene are representative of plastics, and acrylic is representative of synthetic resins. Substrates made of these materials can be used. For the first light-shielding layer 108 and the second light-shielding layer 109, a light-shielding film (for example, a single-layer film of chromium (Cr), a laminated film of chromium oxide (Cr O ) and chromium (Cr), a resin film in which pigments, dyes, etc. such as carbon black are dispersed, etc.) can be used. ) and chromium (Cr), a resin film in which pigments, dyes, etc. such as carbon black are dispersed, etc.) can be used. x O y ) and chromium (Cr), a resin film in which pigments, dyes, etc. such as carbon black are dispersed, etc.) can be used. For the first light-shielding layer 108 and the second light-shielding layer 109, a light-shielding film (for example, a single-layer film of chromium (Cr), a laminated film of chromium oxide (Cr

[0039] As shown in FIG. 1(B), as the light-shielding layer, there are formed a first light-shielding layer 108 formed in a region corresponding to the gate line 151 and the source line 152 on the active matrix substrate, and a second light-shielding layer 109 formed in a region corresponding to the contact hole 103 in the source region or the drain region of the thin film transistor on the active matrix substrate. As shown in FIG. 1(B), as the light-shielding layer, there are formed a first light-shielding layer 108 formed in a region corresponding to the gate line 151 and the source line 152 on the active matrix substrate, and a second light-shielding layer 109 formed in a region corresponding to the contact hole 103 in the source region or the drain region of the thin film transistor on the active matrix substrate. The region corresponding to the contact hole 103 in the source region or the drain region of the thin film transistor on the active matrix substrate refers to the region overlapping the contact hole 103. The region corresponding to the contact hole 103 in the source region or the drain region of the thin film transistor on the active matrix substrate refers to the region overlapping the contact hole 103. The region corresponding to the contact hole 103 in the source region or the drain region of the thin film transistor on the active matrix substrate refers to the region overlapping the contact hole 103.

[0040] The second light-shielding layer 109 is formed in a region corresponding to the gate line 151 and the source line 152. Independently of the first light-shielding layer 108, it is formed in a region corresponding to the contact hole 103 of the active matrix substrate. Therefore, since that region does not function as a display portion, even if the alignment state of the liquid crystal molecules existing above the contact hole 103 is disturbed, no color unevenness occurs, and it becomes possible to fabricate a high-quality display device with high contrast.

[0041] Also, the first light-shielding layer 108 is provided above the gate line 151 and the source line 152, but does not cover the entire thin film transistor. Due to such a configuration, a decrease in the aperture ratio can be minimized.

[0042] By forming the light-shielding layer in two parts, the first light-shielding layer 108 and the second light-shielding layer 109, a decrease in the aperture ratio can be minimized, no color unevenness occurs, and a high-quality display device with high contrast can be fabricated.

[0043] The shape of the second light-shielding layer 109 may be any shape as long as it is provided in a region corresponding to the contact hole 103 of the active matrix substrate. For example, a circle, an ellipse, a square, a rectangle, a triangle, etc. can be mentioned.

[0044] The counter electrode 110 is formed in contact with the substrate 107, the first light-shielding layer 108, and the second light-shielding layer 109. For the counter electrode 110, indium tin oxide (ITO) obtained by mixing indium oxide with tin oxide, indium tin silicon oxide (ITSO) obtained by mixing indium tin oxide (ITO) with silicon oxide, indium zinc oxide (IZO) obtained by mixing indium oxide with zinc oxide, zinc oxide (ZnO), or tin oxide (SnO 2 ) etc. can be used. ​​

[0045] An alignment film 111 is formed on the counter electrode 110. A polyimide resin or the like can be used for the alignment film 111.

[0046] The active matrix substrate and the counter substrate having the above-described configuration are bonded together, and a liquid crystal layer 112 is formed between the active matrix substrate and the counter substrate. For the liquid crystal, ferroelectric liquid crystal (FLC), nematic liquid crystal, smectic liquid crystal, liquid crystal that achieves homogeneous alignment, liquid crystal that achieves homeotropic alignment, or the like can be used.

[0047] When the configuration shown in FIGS. 1(A) and (B) is adopted, as shown in FIG. 7, the second light-shielding layer 402 is provided independently of the first light-shielding layer 401.

[0048] In addition to the configuration of FIGS. 1(A) and (B), a coloring layer (color filter) may be formed on the active matrix substrate side, or a coloring layer (color filter) may be formed on the counter substrate side. Further, when forming the coloring layer (color filter), it may be a single color or a plurality of colors.

[0049] The thin film transistor formed on the active matrix substrate may be of a top gate type, a bottom gate type, a channel etch type, a channel protection type, or any other type. Further, the source electrode or the drain electrode of the thin film transistor does not have to be directly connected to the pixel electrode. FIG. 9(A) shows the configuration shown in FIG. 1(A). In FIG. 9(A), the pixel electrode 602 is in contact with the source electrode or the drain electrode 601 of the channel etch type transistor. FIG. 9(B) shows the source electrode of the channel etch type thin film transistor shown in FIG. 9(A). ​​​​​​​​​​​​The source or drain electrode 611 and the pixel electrode 612 are electrically connected via the conductive layer 613. This is the configured state.

[0050] Fig. 9(C) shows a top-gate type thin-film transistor, where the source region or drain region 621 of the thin-film transistor is in contact with the pixel electrode 622. Fig. 9( D) shows that the source region or drain region 631 of the top-gate type thin-film transistor shown in Fig. 9(C) and the pixel electrode 632 are electrically connected via the conductive layer 633. This is the configured state.

[0051] Note that the thin-film transistors shown in Figs. 9(A) to (D) are merely examples. In this embodiment, although a thin-film transistor formed on a glass substrate is shown, the thin-film transistors that can be used in the present invention are not limited to these, and transistors using a silicon wafer can also be used.

[0052] By adopting the configurations shown in Figs. 1(A) and (B), since the alignment of the liquid crystal molecules disturbed above the contact hole 103 is not reflected in the image display, a display without color unevenness can be produced. Also, since the second light-shielding layer 109 is selectively formed, a decrease in the aperture ratio can be suppressed. Further, since the first light-shielding layer 108 formed in the region corresponding to the gate line 151 and the source line 152 on the active matrix substrate can be formed by the same process as the process of forming the first light-shielding layer 108, there is no increase in the number of steps and no need to use a complicated process.

[0053] Also, in the region corresponding to the portion where the insulating film 102 is inclined in the contact hole 103 ​​​​​​​​, that is, it is also possible to adopt a configuration in which a light-shielding layer is provided in a region overlapping the edge of the contact hole. This is because the alignment of the liquid crystal molecules is most disturbed in the region where the insulating film 102 is inclined (the edge of the contact hole).

[0054] FIG. 2(B) is a top view of the liquid crystal display device to which the present invention is applied, as viewed from the counter substrate side. It is different from FIG. 1(B) in that the light-shielding layer 122 in FIG. 2 is donut-shaped instead of circular. As the active matrix substrate, a thin film transistor, a wiring layer electrically connected to the thin film transistor, an insulating film, a pixel electrode, an alignment film, etc. are formed on the substrate. As the counter substrate to be bonded to the active matrix substrate, a light-shielding layer, a counter electrode, an alignment film, etc. are formed on the substrate. In FIG. 2(B), only the gate line 151, the source line 152, the contact hole 153, the semiconductor layer 154 of the thin film transistor, the first light-shielding layer 108, and the second light-shielding layer 122 are shown, and the others are omitted. Note that the same reference numerals are given to those common to FIG. 1(B).

[0055] As shown in FIG. 2(B), the light-shielding layer is composed of a first light-shielding layer 108 formed in a region corresponding to the gate line 151 and the source line 152, and a second light-shielding layer 122 formed in a region corresponding to a portion 121 where the insulating film is inclined among the contact holes 153 in the source region or the drain region of the thin film transistor. The region corresponding to the portion 121 where the insulating film is inclined among the contact holes 153 refers to a region overlapping the edge of the contact hole 153.

[0056] FIG. 2(A) is an enlarged view of the contact hole portion, and is taken along the line B-B' in FIG. 2(B). ​​​​​​​​​​​​​​is a cross-sectional view. Regarding the configuration of the active matrix substrate, FIGS. 1(A) and (B) are the same, so the description is omitted here. Note that the same reference numerals are used for those that are common to FIG. 1(A).

[0057] The configuration of the counter substrate is as follows. A first light-shielding layer 108 and a second light-shielding layer 122 are formed in contact with the substrate 107. The second light-shielding layer 122 is formed in accordance with the region corresponding to the inclined portion 121 of the insulating film 102 formed on the active matrix substrate. Note that the region corresponding to the inclined portion 121 of the insulating film 102 refers to the region overlapping the edge of the contact hole.

[0058] As the substrate 107, in addition to glass substrates such as aluminoborosilicate glass, barium borosilicate glass, and quartz glass, substrates made of plastics typified by PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PES (polyethersulfone), and polypropylene, or substrates made of synthetic resins typified by acrylic can be used. For the second light-shielding layer 122, a light-shielding film (for example, a single-layer film of chromium (Cr), a laminated film of chromium (Cr) and chromium (Cr), a resin film in which pigments such as carbon black and dyes are dispersed, etc.) can be used. r x O y

[0059] A counter electrode 110 is formed in contact with the substrate 107 and the second light-shielding layer 122. For the counter electrode 110, indium tin oxide (ITO) in which indium oxide is mixed with tin oxide, indium tin silicon oxide (ITS) in which silicon oxide is mixed with indium tin oxide (ITO) ​​​​​​​​​​​​(O) Indium zinc oxide (IZO) obtained by mixing zinc oxide with indium oxide, zinc oxide (ZnO), or tin oxide (SnO 2 ) etc. can be used.

[0060] An alignment film 111 is formed on the counter electrode 110. For the alignment film 111, a polyimide resin or the like can be used.

[0061] The counter substrate having the above-described configuration and the active matrix substrate described with reference to FIG. 1(A) are bonded together, and liquid crystal is injected between the active matrix substrate and the counter substrate. As the liquid crystal, ferroelectric liquid crystal (FLC), nematic liquid crystal, smectic liquid crystal, liquid crystal that becomes homogeneous alignment, liquid crystal that becomes homeotropic alignment, etc. can be used.

[0062] In addition to the configurations shown in FIGS. 2(A) and (B), a coloring layer (color filter) may be formed on the active matrix substrate side, or a coloring layer (color filter) may be formed on the counter substrate side. Also, when forming the coloring layer (color filter), it may be single color or multiple colors.

[0063] The thin film transistor formed on the active matrix substrate may be of a top gate type, bottom gate type, channel etch type, channel protection type, or any of them. Also, the source electrode or drain electrode of the thin film transistor does not have to be directly connected to the pixel electrode. In FIGS. 2(A) and (B) as well, the transistors shown in FIGS. 9(A) to (D) similar to FIGS. 1(A) and (B) can be used.

[0064] By adopting the configurations shown in FIGS. 2(A) and (B), among the contact holes 153 ​The liquid crystal is disordered at the inclined portion 121 of the insulating film 102, that is, at the edge of the contact hole. Since the orientation of the molecules is not reflected in the image displayed, it is possible to create a display without color unevenness. In addition, since the second light-shielding layer 122 is selectively formed, the decrease in the aperture ratio can be suppressed. In addition, the gate lines 151 and the source lines 152 on the active matrix substrate can be The first light-shielding layer 108 is formed in the corresponding region in the same process as the first light-shielding layer 108. Therefore, there is no increase in the number of steps, and there is no need to use a complicated process.

[0065] (Embodiment 3) In this embodiment, a liquid crystal display device in which a colored layer (color filter) is selectively removed is described. This will be explained with reference to FIG. 3 and FIG.

[0066] FIG. 3(B) is a top view of a liquid crystal display device to which the present invention is applied, as viewed from the opposing substrate side. As an active matrix substrate, thin film transistors, insulating films, pixel electrodes, alignment films, etc. are mounted on the substrate. The substrate is used as an opposing substrate to be bonded to the active matrix substrate. On top of this, a light-shielding layer, a colored layer, a counter electrode, an alignment film, etc. are formed. In FIG. Gate line 251, source line 252, contact hole 203, semiconductor of thin film transistor Only the layer 254, the light-shielding layer 208, and the colored layer (color filter) 209 are shown. Omitted.

[0067] As shown in FIG. 3B, the colored layer (color filter) 209 is an active matrix. A contact hole 203 for the source region or drain region of a thin film transistor on a substrate The area corresponding to the contact hole 203 is removed. Refers to the area overlapping with the contact hole 203.

[0068] FIG. 3(A) is an enlarged view of the contact hole portion and is a cross-sectional view taken along C-C' of FIG. 3(B). The configuration of the active matrix substrate of the present embodiment will be described below. This will be described below. to do.

[0069] A thin film transistor 201 is formed on the substrate 200. As the substrate 200, in addition to glass substrates such as aluminosilicate glass, barium borosilicate glass, and quartz glass, substrates made of plastics typified by PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PES (polyethersulfone), polypropylene, and synthetic resins typified by acrylic can be used. The thin film transistor 201 can be of any type, such as a top gate type, a bottom gate type, a channel etch type, or a channel protection type. In FIG. 3(A), a channel etch type transistor is illustrated. aluminosilicate glass, barium borosilicate glass, quartz glass, etc., in addition to plastic substrates such as PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PES (polyethersulfone), polypropylene, and substrates made of synthetic resins such as acrylic can be used as the raw material. The thin film transistor 201 ET (polyethylene terephthalate), PEN (polyethylene naphthalate), PES ( polyethersulfone), plastics typified by polypropylene, and substrates made of synthetic resins such as acrylic can be used. The thin film transistor 201 can be of any type, such as a top gate type, a bottom gate type, a channel etch type, or a channel protection type. In FIG. 3(A), a channel etch type transistor is illustrated. can be either a top gate type, a bottom gate type, a channel etch type, or a channel protection type. In FIG. 3(A), a channel etch type transistor is illustrated. is shown.

[0070] An insulating film 202 is formed on the thin film transistor 201, and a contact hole 203 for electrically connecting to the thin film transistor 201 is formed. The insulating film 202 can be formed using an organic resin film, an inorganic insulating film, or an insulating film containing a Si-O-Si bond formed using a siloxane-based material as a starting material (siloxane-based insulating film). Here, siloxane is a structure in which a skeletal structure is formed by a bond between silicon (Si) and oxygen (O), and at least an organic group containing hydrogen (for example, an alkyl group or an aryl group) is used as a substituent is a structure in which a skeletal structure is formed by a bond between silicon (Si) and oxygen (O), and at least an organic group containing hydrogen (for example, an alkyl group or an aryl group) is used as a substituent is a structure in which a skeletal structure is formed by a bond between silicon (Si) and oxygen (O), and at least an organic group containing hydrogen (for example, an alkyl group or an aryl group) is used as a substituent is a structure in which a skeletal structure is formed by a bond between silicon (Si) and oxygen (O), and at least an organic group containing hydrogen (for example, an alkyl group or an aryl group) is used as a substituent is a structure in which a skeletal structure is formed by a bond between silicon (Si) and oxygen (O), and at least an organic group containing hydrogen (for example, an alkyl group or an aryl group) is used as a substituent is used. Also, a fluorine group may be used as a substituent. Alternatively, at least an organic group containing hydrogen and a fluorine group may be used as substituents. Also, a low dielectric constant material can be used for the insulating film. It may be.

[0071] The pixel electrode 204 is formed so as to cover the thin film transistor 201 and the insulating film 202. . The pixel electrode 204 is electrically connected to the drain electrode 205b of the exposed thin film transistor 201. connected.

[0072] When manufacturing a reflective liquid crystal display device, a reflective metal can be used as the pixel electrode 204. When manufacturing a transmissive liquid crystal display device, indium tin oxide (ITO) obtained by mixing tin oxide with indium oxide, indium tin silicon oxide (ITSO) obtained by mixing silicon oxide with indium tin oxide (ITO), indium zinc oxide (IZO) obtained by mixing zinc oxide with indium oxide, zinc oxide (ZnO), or tin oxide (S nO etc.) can be used. When manufacturing a transflective liquid crystal display device, a reflective metal is used as the pixel electrode in the reflective region, and a light-transmissive material (for example, indium tin oxide (ITO) obtained by mixing tin oxide with indium oxide, indium tin silicon oxide (ITSO) obtained by mixing silicon oxide with indium tin oxide (ITO), indium zinc oxide (IZO) obtained by mixing zinc oxide with indium oxide, zinc oxide (ZnO), or tin oxide (S nO nO 2 ) etc.) can be used in the transmissive region. is used. etc.) can be used. oxide (ITO), indium tin silicon oxide (ITSO) obtained by mixing silicon oxide with indium tin oxide (ITO), indium zinc oxide (IZO) obtained by mixing zinc oxide with indium oxide, zinc oxide (ZnO), or tin oxide (S etc.) can be used. or tin oxide (SnO 2 ) etc.) can be used.

[0073] An alignment film 206 is formed on the pixel electrode 204. A polyimide resin or the like can be used for the alignment film 206. etc. can be used.

[0074] Next, the configuration of the counter substrate of the present embodiment will be described.

[0075] In contact with the substrate 207, a light-shielding layer 208 and a colored layer (color filter) 209 are formed. The colored layer (color filter) is removed in accordance with the contact hole 203 formed in the insulating film 202. As the substrate 207, in addition to glass substrates such as aluminoborosilicate glass, barium borosilicate glass, and quartz glass, substrates made of plastics typified by PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PES (polyethersulfone), polypropylene, and substrates made of synthetic resins typified by acrylic, using plastics or synthetic resins as raw materials can be used. Also, the colored layer (color filter) 209 may be single-colored or multi-colored.

[0076] The shape of the portion where the colored layer (color filter) is removed may be any shape as long as it is formed in a region corresponding to the contact hole 203 of the active matrix substrate, that is, a region overlapping the contact hole 203. For example, a circle, an ellipse, a square, a rectangle, a triangle, etc. can be mentioned.

[0077] A counter electrode 210 is formed in contact with the substrate 207, the light-shielding layer 208, and the colored layer (color filter) 209. As the counter electrode 210, indium tin oxide (ITO) obtained by mixing indium oxide with tin oxide, indium tin silicon oxide (ITSO) obtained by mixing indium tin oxide (ITO) with silicon oxide, indium zinc oxide (IZO) obtained by mixing indium oxide with zinc oxide, zinc oxide (ZnO), or tin oxide (SnO 2 ) etc. can be used.

[0078] An alignment film 211 is formed on the counter electrode 210. As the alignment film 211, a polyimide resin Fats and the like can be used.

[0079] Bond the active matrix substrate and the counter substrate having the above-described configuration, and form a liquid crystal layer 212 between the active matrix substrate and the counter substrate. As the liquid crystal, ferroelectric liquid crystal (FLC ), nematic liquid crystal, smectic liquid crystal, liquid crystal that becomes homogeneous alignment, liquid crystal that becomes homeotropic alignment, and the like can be used.

[0080] The thin film transistor formed on the active matrix substrate may be of a top gate type, bottom gate type, channel etch type, or channel protection type. Also, the source electrode or drain electrode of the thin film transistor does not have to be directly connected to the pixel electrode. In FIGS. 3(A) and (B) as well, the transistors shown in FIGS. 9(A) to (D) can be used in the same manner as in FIGS. 1(A) and (B).

[0081] By adopting the configuration shown in FIGS. 3(A) and (B), since the alignment of the liquid crystal molecules disturbed above the contact hole 203 is not reflected in the image display, a display without color unevenness can be manufactured. Also, in order to selectively remove the coloring layer (color filter), the reduction in aperture ratio can be suppressed more than in the configuration where a light shielding layer is provided. Also, since the process of manufacturing a normal coloring layer (color filter) can be formed in the same process, there is no increase in the number of processes, and there is no need to use a complicated process. (color filter) can be formed in the same process, so there is no increase in the number of processes, and there is no need to use a complicated process.

[0082] Also, it is also possible to adopt a configuration in which the coloring layer (color filter) in the region corresponding to the portion where the insulating film 202 is inclined among the contact holes 203 of the active matrix substrate is removed. ​​​​This is possible. The alignment of the liquid crystal molecules is most disrupted at the portion where the insulating film 202 is inclined, i.e., at the edge of the contact hole.

[0083] Figure 4(B) is a top view of the liquid crystal display device to which the present invention is applied, as viewed from the counter substrate side. It is different from Figure 3(B) in that the color layer (color filter) is removed in a donut shape instead of a round shape. As the active matrix substrate, a thin film transistor, an insulating film, a picture element electrode, an alignment film, etc. are formed on the substrate. As the counter substrate to be bonded to the active matrix substrate, a light-shielding layer, a color layer, a counter electrode, an alignment film, etc. are formed on the substrate. In Figure 4(B ), only the gate line 251, the source line 252, the contact hole 253, the semiconductor layer 254 of the thin film transistor, the light-shielding layer 208, the first color layer (color filter) 223, and the second color layer (color filter) 222 are shown, and the others are omitted. Note that the same reference numerals are used for those common to Figure 3 (B). 20. In addition, the same reference numerals are used for those common to Figure 3(B). (B).

[0084] As shown in Figure 4(B), the color layer (color filter) has a region corresponding to the portion 221 where the insulating film 202 is inclined removed from among the contact holes in the source region or the drain region of the thin film transistor on the active matrix substrate. The region corresponding to the portion 221 where the insulating film 202 is inclined among the contact holes refers to the region overlapping with the edge of the contact hole. That is, in addition to the first color layer (color filter) 223, the second color layer (color filter) 222 is formed in the region corresponding to the opening portion of the insulating film 202. is formed.

[0085] Figure 4(A) is an enlarged view of the contact hole portion, and is cut along D-D' in Figure 4(B). is a cross-sectional view. Regarding the configuration of the active matrix substrate, FIGS. 3(A) and (B) are the same, so the description is omitted here.

[0086] The configuration of the counter substrate is as follows. A light-shielding layer 208, a first coloring layer (color filter) 223, and a second coloring layer (color filter) 222 are formed on the substrate 207. The coloring layer (color filter) is removed in accordance with the region corresponding to the inclined portion of the insulating film 202 formed on the active matrix substrate. The region corresponding to the inclined portion of the insulating film 202 refers to the region overlapping the edge of the contact hole. That is, the first coloring layer (color filter) 223 and the second coloring layer (color filter) 222 are formed.

[0087] A counter electrode 210 is formed in contact with the substrate 207, the first coloring layer (color filter) 223, and the second coloring layer (color filter) 222. For the counter electrode 210, indium tin oxide (ITO) obtained by mixing tin oxide with indium oxide, indium tin silicon oxide (ITSO) obtained by mixing silicon oxide with indium tin oxide (ITO), indium zinc oxide (IZO) obtained by mixing zinc oxide with indium oxide, zinc oxide (ZnO), or tin oxide (SnO etc. can be used. 2 ) etc. can be used.

[0088] An alignment film 211 is formed on the counter electrode 210. For the alignment film 211, polyimide resin etc. can be used.

[0089] The counter substrate having the above-described configuration and the active matrix substrate described in FIG. 3(A) are bonded together ​​​A liquid crystal layer 212 is formed between the active matrix substrate and the counter substrate. The liquid crystal used may be , ferroelectric liquid crystal (FLC), nematic liquid crystal, smectic liquid crystal, liquid crystal that forms a homogeneous alignment , liquid crystal that forms a homeotropic alignment, etc.

[0090] The thin film transistor formed on the active matrix substrate may be of a top gate type, bottom gate type, channel etch type, channel protection type, or any other type. Also, the source electrode or drain electrode of the thin film transistor does not have to be directly connected to the pixel electrode. In FIGS. 4(A) and (B), as well as in FIGS. 1(A) and (B), the transistors shown in FIGS. 9(A) to (D) can be used.

[0091] By adopting the configuration shown in FIGS. 4(A) and (B), the orientation of the disordered liquid crystal molecules above the inclined portion 221 of the insulating film 202 in the contact hole is not reflected in the image display, so that a display with no color unevenness can be manufactured. Also, since the coloring layer (color filter) is selectively formed, a decrease in the aperture ratio can be minimized. Also, since it can be formed by the same process as the process for manufacturing a normal coloring layer, there is no increase in the number of processes , and there is no need to use a complicated process.

[0092] (Embodiment 4) In this embodiment, a liquid crystal display device in which a light-shielding layer is selectively formed and a coloring layer (color filter) is selectively removed will be described with reference to FIGS. 5 and 6.

[0093] FIG. 5(B) is a top view of the liquid crystal display device to which the present invention is applied, as viewed from the counter substrate side. A As the active matrix substrate, a thin film transistor, an insulating film, a pixel electrode, an alignment film, etc. are formed on the substrate. As the counter substrate to be bonded to the active matrix substrate, the substrate has a light-shielding layer, a counter electrode, an alignment film, a coloring layer (color filter), etc. formed thereon. In FIG. 5(B), only the gate line 351, the source line 352, the contact hole 303, the semiconductor layer 354 of the thin film transistor, the first light-shielding layer 308, the second light-shielding layer 309, and the coloring layer (color filter) 310 are shown, and the others are omitted.

[0094] As shown in FIG. 5(B), as the light-shielding layer, there are two layers: the first light-shielding layer 308 formed in the region corresponding to the gate line 351 and the source line 352, and the second light-shielding layer 309 formed in the region corresponding to the contact hole 303 in the source region or the drain region of the thin film transistor. Also, in the coloring layer (color filter), the region corresponding to the contact hole 303 in the source region or the drain region of the thin film transistor is removed. The region corresponding to the contact hole 303 refers to the region overlapping the contact hole 303. In FIG. 5( B), the light-shielding layer is formed in the region where the coloring layer (color filter) is removed. hole 303 refers to the region overlapping the contact hole 303. In FIG. 5( B), the light-shielding layer is formed in the region where the coloring layer (color filter) is removed. B), the light-shielding layer is formed in the region where the coloring layer (color filter) is removed. is the configuration.

[0095] FIG. 5(A) is an enlarged view of the contact hole portion and is a cross-sectional view taken along E-E' in FIG. 5(B). The configuration of the active matrix substrate of the present embodiment will be described below. The thin film transistor 301 is formed on the substrate 300. As the substrate 300, in addition to glass substrates such as aluminosilicate glass, barium borosilicate glass, and quartz glass, P will be described.

[0096] A thin film transistor 301 is formed on the substrate 300. As the substrate 300, in addition to glass substrates such as aluminosilicate glass, barium borosilicate glass, and quartz glass, P In addition to glass substrates such as aluminosilicate glass, barium borosilicate glass, and quartz glass, P ET (polyethylene terephthalate), PEN (polyethylene naphthalate), PES ( polyethersulfone), plastics represented by polypropylene, and substrates made of synthetic resins represented by acrylic, etc. can be used. The thin film transistor 301 is either a top gate type, a bottom gate type, a channel etch type, or a channel protection type. In FIG. 5(A), a channel etch type transistor is illustrated.

[0097] An insulating film 302 is formed on the thin film transistor 301, and a contact hole 303 for electrically connecting to the thin film transistor 301 is formed. The insulating film 302 can be formed using an organic resin film, an inorganic insulating film, or an insulating film containing a Si-O-Si bond formed using a siloxane-based material as a starting material (siloxane-based insulating film). Here, siloxane is a structure in which a skeletal structure is composed of a bond between silicon (Si) and oxygen (O), and at least an organic group containing hydrogen (e.g., an alkyl group, an aryl group) is used as a substituent. Also, a fluoro group may be used as a substituent. Or, at least an organic group containing hydrogen and a fluoro group may be used as substituents. Also, a low dielectric constant material may be used for the insulating film.

[0098] A pixel electrode 304 is formed so as to cover the thin film transistor 301 and the insulating film 302. The pixel electrode 304 is electrically connected to the drain electrode 305b of the exposed thin film transistor 301.

[0099] When manufacturing a reflective liquid crystal display device, a reflective metal can be used as the pixel electrode 304. When manufacturing a transmissive liquid crystal display device, indium oxide doped with acid ​​​​​​​​​​ Indium tin oxide (ITO) mixed with tin oxide, indium tin oxide (ITO) Indium tin silicon oxide (ITSO) mixed with silicon oxide, indium oxide and zinc oxide mixed indium zinc oxide (IZO), zinc oxide (ZnO), or tin oxide (S nO 2 ) etc. can be used. When manufacturing a transflective liquid crystal display device, in the reflection region a reflective metal is used for the pixel electrode, and in the transmission region, a light-transmissive material (for example, acid indium tin oxide (ITO) obtained by mixing tin oxide with indium oxide, indium tin acid oxide (ITO) mixed with silicon oxide, indium zinc oxide (IZO) obtained by mixing indium oxide with zinc oxide, zinc oxide (ZnO), or tin oxide (SnO ) etc.) can be used. 2 ) etc.) can be used.

[0100] An alignment film 306 is formed on the pixel electrode 304. For the alignment film 306, a polyimide resin etc. can be used.

[0101] Next, the configuration of the counter substrate of the present embodiment will be described.

[0102] In contact with the substrate 307, a first light-shielding layer 308, a second light-shielding layer 309, and a coloring layer (color filter lter) 310 are formed. The first light-shielding layer 308 is formed so as to cover the source wiring, but the source electrode 305a covers only a part thereof. The second light-shielding layer 309 is formed in accordance with the contact hole 303. On the substrate 307, in addition to glass substrates such as aluminoborosilicate glass, barium borosilicate glass, and quartz glass, PET (polyethylene tere phthalate), PEN (polyethylene naphthalate), PES (polyethersulfone ), etc. rate), PEN (polyethylene naphthalate), PES (polyethersulfone ) Substrates made of plastics represented by polypropylene and synthetic resins represented by acrylic can be used. The first light-shielding layer 308 and the second light-shielding layer 309 can use light-shielding films (for example, single-layer films of chromium (Cr), laminated films of chromium oxide (Cr O x and chromium ( y Cr)), resin films in which pigments such as carbon black and dyes are dispersed, etc.). can be used.

[0103] As shown in FIG. 5(B), the first light-shielding layer 308 formed in the region corresponding to the gate line 351 and the source line 352 on the active matrix substrate, and the contact hole 303 in the source region or drain region of the thin film transistor on the active matrix substrate Two second light-shielding layers 309 corresponding to the region are formed. Note that the region corresponding to the contact hole 3 03 refers to the region overlapping with the contact hole 303.

[0104] The second light-shielding layer 309 is formed in the region corresponding to the contact hole 303 of the active matrix substrate independently of the first light-shielding layer 308 formed in the region corresponding to the gate line 351 and the source line 352. Therefore, since that region does not function as a display portion, even if the alignment state of the liquid crystal molecules existing above the contact hole 303 is disturbed, it is possible to fabricate a high-quality display device with no color unevenness.

[0105] Also, the first light-shielding layer 308 is provided above the gate line 351 and the source line 352, but does not cover the entire thin film transistor. Because of such a configuration, it is possible to minimize the reduction of the aperture ratio.

[0106] By forming the light-shielding layer in two parts, namely the first light-shielding layer 308 and the second light-shielding layer 309, it is possible to minimize the reduction in aperture ratio, achieve uniform color, and produce a high-quality display device with high contrast.

[0107] Note that the shape of the second light-shielding layer 309 can be any shape as long as it is provided in the region corresponding to the contact hole of the active matrix substrate. For example, circular, elliptical, square, rectangular, triangular, etc. can be mentioned.

[0108] Next, a coloring layer (color filter) 310 is formed. The coloring layer (color filter) is removed in accordance with the contact hole 303 formed in the insulating film 302. Also, the coloring layer (color filter) 310 can be single-colored or multi-colored.

[0109] The shape of the removed coloring layer (color filter) can be any shape as long as it is formed in the region corresponding to the contact hole 303 of the active matrix substrate. For example, circular, elliptical, square, rectangular, triangular, etc. can be mentioned.

[0110] Next, a counter electrode 311 is formed. For the counter electrode 311, indium tin oxide (ITO) obtained by mixing indium oxide with tin oxide, indium tin silicon oxide (ITSO) obtained by mixing indium tin oxide (ITO) with silicon oxide, indium zinc oxide (IZO) obtained by mixing indium oxide with zinc oxide, zinc oxide (ZnO), or tin oxide (SnO 2 ) etc. can be used.

[0111] An alignment film 312 is formed on the counter electrode 311. The alignment film 312 is made of a polyimide resin Fats or the like can be used.

[0112] The active matrix substrate having the above-described configuration and the counter substrate are bonded together, and a liquid crystal layer 313 is formed between the active matrix substrate and the counter substrate. For the liquid crystal, ferroelectric liquid crystal (FLC), nematic liquid crystal, smectic liquid crystal, liquid crystal that becomes homogeneous alignment, liquid crystal that becomes homeotropic alignment, or the like can be used.

[0113] The thin film transistor formed on the active matrix substrate may be any of a top gate type, a bottom gate type, a channel etch type, and a channel protection type. Also, the source electrode or drain electrode of the thin film transistor does not have to be directly connected to the pixel electrode. In FIGS. 5(A) and (B) as well, the transistors shown in FIGS. 9(A) to (D) can be used in the same manner as in FIGS. 1(A) and (B).

[0114] By adopting the configuration shown in FIGS. 5(A) and (B), since the alignment of the liquid crystal molecules disturbed above the contact hole 303 is not reflected in the image display, a display without color unevenness can be manufactured. Also, by selectively providing a light shielding layer and selectively removing a coloring layer (color filter), a decrease in the aperture ratio can be suppressed. Further, since it can be formed by the same process as the process of manufacturing a normal light shielding layer and coloring layer (color filter), there is no increase in the number of processes and there is no need to use a complicated process.

[0115] ​​It is also possible to adopt a configuration for removing (the protrusion). This is because the alignment of the liquid crystal molecules is most disrupted in the region where the insulating film 302 is inclined (the edge of the contact hole).

[0116] FIG. 6(B) is a top view of the liquid crystal display device to which the present invention is applied, as viewed from the counter substrate side. The second light-shielding layer 322 is formed in a donut shape instead of a circular shape, and the coloring layer (color filter) is removed in a donut shape instead of a circular shape, which is different from FIG. 5(B). As the active matrix substrate, a thin film transistor, an insulating film, a pixel electrode, an alignment film, etc. are formed on the substrate. As the counter substrate to be bonded to the active matrix substrate, a light-shielding layer , a coloring layer, a counter electrode, an alignment film, etc. are formed on the substrate. In FIG. 6(B), the gate line 35 1, the source line 352, the semiconductor layer 354 of the thin film transistor, the first light-shielding layer 308, the second light-shielding layer 322, the first coloring layer (color filter) 323, and the second coloring layer (color filter ter) 324 are only shown, and the others are omitted. Note that the same reference numerals are used for those common to FIG. 5(B).

[0117] As shown in FIG. 6(B), among the contact holes in the source region or the drain region of the thin film transistor formed on the active matrix substrate, the second light-shielding layer 322 is formed in the region corresponding to the portion 321 where the insulating film 302 is inclined, and the coloring layer (color filter er) is removed. Note that the region corresponding to the portion 321 where the insulating film 302 is inclined refers to the region overlapping the edge of the contact hole.

[0118] FIG. 6(A) is an enlarged view of the contact hole portion, and is cut along F-F' in FIG. 6(B). ​​​is a cross-sectional view. Regarding the configuration of the active matrix substrate, see FIGS. 5(A) and (B). Since it is the same as that, the description is omitted here.

[0119] The configuration of the counter substrate is as follows. In contact with the substrate 307, a first light-shielding layer 308, a second light-shielding layer 322, a first colored layer (color filter) 323, and a second colored layer (color filter ter) 324 are formed. The first light-shielding layer 308 is formed so as to cover the source wiring, but covers only a part of the source electrode 305a. The second light-shielding layer 322 is formed in accordance with the portion 321 where the insulating film 302 is inclined among the contact holes. The substrate 307 can be a glass substrate such as aluminoborosilicate glass, barium borosilicate glass, or quartz glass, or a substrate made of a plastic such as PET (polyethylene terephthalate), PEN (polyethylene naphthalate rate), PES (polyethersulfone), or polypropylene, or a substrate made of a synthetic resin such as acrylic. For the first light-shielding layer 308 and the second light-shielding layer 322, a light-shielding film (for example, a single-layer film of chromium (Cr), a laminated film of chromium oxide (Cr O x y y y ) and chromium (Cr), a resin film in which pigments such as carbon black , dyes, etc. are dispersed, etc.) can be used.

[0120] As shown in FIG. 6(B), the first light-shielding layer 308 formed in the region corresponding to the gate line 351 and the source line 352 on the active matrix substrate, and the contact hole in the source region or drain region of the thin film transistor on the active matrix substrate Two of the second light-shielding layers 322 formed in the region corresponding to the portion 321 where the insulating film 3 02 is inclined are formed in the region corresponding to the portion 321 where the insulating film 302 is inclined among the contact holes in the source region or drain region of the thin film transistor on the active matrix substrate It is formed. The region corresponding to the inclined portion 321 of the insulating film 302 refers to the region overlapping with the edge of the contact hole. It refers to the region overlapping with the edge of the contact hole.

[0121] The second light-shielding layer 322 is formed in a region corresponding to the gate line 351 and the source line 352. Independent of the first light-shielding layer 308, it is formed in a region corresponding to the portion 321 where the insulating film 302 is inclined among the contact holes of the active matrix substrate. Therefore, since that region does not function as a display portion, even if the alignment state of the liquid crystal molecules is disturbed, a high-quality display device without color unevenness can be manufactured. since that region does not function as a display portion, even if the alignment state of the liquid crystal molecules is disturbed, a high-quality display device without color unevenness can be manufactured. a high-quality display device without color unevenness can be manufactured.

[0122] Also, the first light-shielding layer 308 is provided above the gate line 351 and the source line 352, but does not cover the entire thin film transistor. Due to such a configuration, a decrease in the aperture ratio can be minimized. a decrease in the aperture ratio can be minimized.

[0123] By forming the light-shielding layer in two parts, the first light-shielding layer 308 and the second light-shielding layer 322, a decrease in the aperture ratio can be minimized, and a high-quality display device without color unevenness and with high contrast can be manufactured. a high-quality display device without color unevenness and with high contrast can be manufactured.

[0124] The shape of the second light-shielding layer 322 may be any shape as long as it is provided in a region corresponding to the contact hole of the active matrix substrate. For example, a circle, an ellipse, a square, a rectangle, a triangle, etc. can be mentioned. a rectangle, a triangle, etc. can be mentioned.

[0125] Next, the first coloring layer (color filter) 323 and the second coloring layer (color filter ) 324 are formed. The coloring layer (color filter) is formed on the active matrix substrate. The area of ​​the formed contact hole where the insulating film is inclined (the edge of the contact hole) The colored layer (color filter) may be of a single color or of multiple colors.

[0126] The shape of the colored layer (color filter) to be removed is the contact of the active matrix substrate. The shape may be any shape as long as it is formed in the area corresponding to the hole. For example, Shapes include oval, square, rectangle, triangle, etc.

[0127] Next, the counter electrode 311 is formed. The counter electrode 311 is made of indium oxide and tin oxide. Indium tin oxide (ITO) mixed with silicon oxide, Indium tin oxide (ITO) mixed with silicon oxide Indium tin silicon oxide (ITSO) mixed with zinc oxide, indium oxide mixed with zinc oxide Indium zinc oxide (IZO), zinc oxide (ZnO), or tin oxide (SnO 2 ) etc. can be used.

[0128] An alignment film 312 is formed on the counter electrode 311. The alignment film 312 is made of a polyimide resin. Grease, etc. can be used.

[0129] The active matrix substrate and the opposing substrate are bonded together to form an active matrix. A liquid crystal layer 313 is formed between the pixel substrate and the opposing substrate. ), nematic liquid crystals, smectic liquid crystals, liquid crystals that are homogeneously aligned, home A liquid crystal or the like that exhibits an orthotropic alignment can be used.

[0130] The thin-film transistors formed on the active matrix substrate are top-gate and bottom-gate. The thin film transistor may be of any type, such as a gate type, a channel etch type, or a channel protection type. The source electrode or drain electrode may not be directly connected to the pixel electrode. FIG. 6(A) And (B), similar to FIGS. 1(A) and (B), the transistors shown in FIGS. 9(A) to (D) can also be used.

[0131] By adopting the configurations shown in FIGS. 6(A) and (B), the alignment of the disordered liquid crystal molecules above the inclined portion 321 of the insulating film 302 among the contact holes is not reflected in the image display. Therefore, a display with no color unevenness can be fabricated. Also, since the light shielding layer is selectively formed and the coloring layer (color filter) is selectively removed, a decrease in the aperture ratio can be suppressed. Further, the second light shielding layer 322 can be formed by the same process as the process of forming the first light shielding layer 308 formed in the region corresponding to the gate line 351 and the source line 352 on the active matrix substrate. Since the coloring layer can also be formed by the same process as the process of fabricating a normal coloring layer, there is no increase in the number of processes and no need to use a complicated process.

[0132] (Embodiment 5) In this embodiment, other aspects of Embodiments 2 and 4 will be described.

[0133] Shown in FIGS. 15(A) and (B) are other aspects of FIG. 1(B). In FIGS. 15(A) and (B), the gate line 151, the source line 152, and the first light shielding layer 108 are common with FIG. 1(B).

[0134] In FIG. 1(B), the second light shielding layer 109 and the contact hole 103 are shown in a shape smaller than the drain electrode. However, as shown in FIG. 15(A), the second light shielding layer 132 is the contact hole ​​​​​​​​​It may be formed to cover the rule 131 and such that a part thereof does not overlap with the drain electrode. Also as shown in FIG. 15(B), a part of the second light-shielding layer 134 and a part of the edge of the contact hole 133 may be formed so as not to overlap with the drain electrode.

[0135] Also, it is also possible to combine FIGS. 15(A) and (B) with FIG. 2(B). In FIG. 2 (B), the second light-shielding layer 122 and the contact hole 153 are shown in a shape smaller than the drain electrode but the second light-shielding layer may cover the edge of the contact hole and a part thereof may not overlap with the drain electrode . Also, a part of the second light-shielding layer and a part of the edge of the contact hole may be formed so as not to overlap with the drain electrode.

[0136] Similarly, it is also possible to combine FIGS. 15(A) and (B) with FIG. 3(B). In FIG 3(B), the shape of the portion where the coloring layer (color filter) is removed is shown to be smaller than the drain electrode but the shape of the portion where the coloring layer (color filter) is removed may cover the contact hole and a part thereof may be formed so as not to overlap with the drain electrode.

[0137] Similarly, it is also possible to combine FIGS. 15(A) and (B) with FIG. 4(B). In FIG 4(B), the shape of the portion where the coloring layer (color filter) is removed is shown to be smaller than the drain electrode but the shape of the portion where the coloring layer (color filter) is removed may cover the edge of the contact hole and a part thereof may be formed so as not to overlap with the drain electrode. Also the shape of the portion where the coloring layer (color filter) is removed and a part of the edge of the contact hole may be formed so as not to overlap with the drain electrode.

[0138] Similarly, it is also possible to combine FIGS. 15(A) and (B) with FIG. 5(B). In FIG. 5(B), the second light-shielding layer 309 and the contact hole 303 are shown to be smaller than the drain electrode, but the second light-shielding layer may be formed so as to cover the contact hole and partially not overlap with the drain electrode. Also, a part of the second light-shielding layer and a part of the edge of the contact hole may be formed so as not to overlap with the drain electrode.

[0139] Similarly, it is also possible to combine FIGS. 15(A) and (B) with FIG. 6(B). In FIG. 6(B), the second light-shielding layer 322 and the contact hole are shown to be smaller than the drain electrode, but the second light-shielding layer may be formed so as to cover the edge of the contact hole and partially not overlap with the drain electrode. Also, a part of the second light-shielding layer and a part of the edge of the contact hole may be formed so as not to overlap with the drain electrode.

[0140] (Embodiment 6) In this embodiment, a method for manufacturing a counter substrate using the present invention will be described with reference to FIG. 8.

[0141] A metal chromium film serving as the light-shielding layer 501 is formed on the substrate 500. As the substrate 500, in addition to glass substrates such as alumino borosilicate glass, barium borosilicate glass, and quartz glass, substrates made of plastics represented by PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PES (poly ether sulfone), polypropylene, and synthetic resins represented by acrylic can be used. As a method for forming the metal chromium film, it is preferable to use a sputtering method or the like. Subsequently, a desired pattern is formed by photolithography. ​​​​​​By processing it into the shape shown, the light-shielding layer 501 is formed (FIG. 8(A)).

[0142] Note that as the material of the light-shielding layer, a light-shielding film (for example, a single-layer film of chromium (Cr), a laminated film of chromium oxide (Cr O x ), a pigment such as carbon black, a resin film in which a dye or the like is dispersed, etc.) can be used. Also, the RGB color filters y may be stacked and used as the light-shielding layer. At this time, to adopt the configuration shown in FIG. 1, the light-shielding layer is formed in the regions corresponding to the gate line 151 and the source line 152 of the active matrix substrate, and in the region corresponding to the contact hole 103 of the source region or the drain region of the thin film transistor.

[0143] To adopt the configuration shown in FIG. 2, the light-shielding layer is formed in the regions corresponding to the gate line 151 and the source line 152 of the active matrix substrate and, among the contact holes 153 of the source region or the drain region of the thin film transistor, in the region corresponding to the portion 121 (edge of the contact hole) where the insulating film 102 is inclined. To adopt the configurations shown in FIGS. 3 and 4, the light-shielding layer is formed in the regions corresponding to the gate line 251 and the source line 252 of the active matrix substrate. To adopt the configuration shown in FIG. 5, the light-shielding layer is formed in the regions corresponding to the gate line 351 and the source line 352 of the active matrix substrate and in the region corresponding to the contact hole 303 of the source region or the drain region of the thin film transistor. To adopt the configuration shown in FIG. 6, the light-shielding layer is formed in the regions corresponding to the gate line 351 and the source line 352 of the active matrix substrate and, among the contact holes of the source region or the drain region of the thin film transistor, in the portion 321 (contact edge) where the insulating film 302 is inclined. To adopt the configuration shown in FIGS. 3 and 4, the light-shielding layer is formed in the regions corresponding to the gate line 251 and the source line 252 of the active matrix substrate. To adopt the configuration shown in FIG. 5, the light-shielding layer is formed in the regions corresponding to the gate line 351 and the source line 352 of the active matrix substrate and in the region corresponding to the contact hole 303 of the source region or the drain region of the thin film transistor. To adopt the configuration shown in FIG. 6, the light-shielding layer is formed in the regions corresponding to the gate line 351 and the source line 352 of the active matrix substrate and, among the contact holes of the source region or the drain region of the thin film transistor, in the portion 321 (contact edge) where the insulating film 302 is inclined. drain region of the thin film transistor, in the portion 321 (contact A light-shielding layer is formed in a region corresponding to the edge of the cut hole.

[0144] Next, a coloring layer (color filter) is formed. Methods for forming the color filter include the pigment dispersion method, the dyeing method, the electrodeposition method, the printing method, etc., and any method may be used. In this embodiment the case of using the pigment dispersion method will be described.

[0145] There are two types of pigment dispersion methods: the etching method and the color resist method. When using the etching method, first, a colored resin in which R pigment is dispersed is applied onto the substrate on which the light-shielding layer is formed by a spin coating method or the like, dried, and preheated. Subsequently, after applying a positive resist, mask exposure is performed. Subsequently, development of the positive resist and etching of the colored resin film are performed with an alkaline aqueous solution, and the positive resist is peeled off with an organic solvent, whereby the R colored resin film 502 can be formed (FIG. 8(B)).

[0146] The same steps are repeated for the G and B colored resins to form the G colored resin film 503 and the B colored resin film 504 (FIGS. 8(C) to (D)). Subsequently, a protective film is applied (not shown ). The color filter is formed by the above steps.

[0147] When using the color resist method (not shown), a color resist having photocurability like a resist is used for the colored resin. The color resist is a material in which a pigment is dispersed in an acrylic-epoxy-based ultraviolet curable resin (negative resist), etc., and dissolved in a solvent. The color resist (R) is applied onto the substrate on which the light-shielding layer is formed by a spin coating method or the like. Next, exposure is performed through a mask and developed to process it into a desired shape.

[0148] The same process is repeated for the color resists of G and B, and a protective film is applied. Through the above processes, a colored layer (color filter) is formed.

[0149] At this time, when adopting the configurations shown in FIGS. 1 and 2, there is no need to particularly remove the colored layer (color filter ). To adopt the configurations shown in FIGS. 3 and 5, the colored layer corresponding to the contact hole in the source region or the drain region of the thin film transistor on the active matrix substrate is removed. To adopt the configurations shown in FIGS. 4 and 6, the colored layer (color filter ) corresponding to the region of the contact hole in the source region or the drain region of the thin film transistor on the active matrix substrate where the insulating film is inclined (the edge of the contact hole) is removed.

[0150] Next, a counter electrode 505 is formed (FIG. 8(E)). For the counter electrode 505, indium tin oxide (ITO) obtained by mixing tin oxide with indium oxide, indium tin silicon oxide (ITSO) obtained by mixing silicon oxide with indium tin oxide (ITO), indium zinc oxide (IZO) obtained by mixing zinc oxide with indium oxide, zinc oxide (ZnO), or tin oxide (SnO ), etc. can be used. Examples of the film forming method include a vacuum evaporation method and a sputtering method. 2 ) method, etc.

[0151] Subsequently, an insulating film 506 that functions as an alignment film is formed (FIG. 8(F)). The insulating film 506 can be formed by printing a polymer compound film such as polyimide or polyvinyl alcohol by a printing method, a roll coating method, etc. and then rubbing. Also, silicon oxide can be applied to the substrate It can also be formed by vapor deposition obliquely. Further, polarized UV light is irradiated onto a photoreactive polymer compound to polymerize the photoreactive polymer compound to form it. Here is to print a polymer compound film such as polyimide or polyvinyl alcohol by a printing method, bake it, and then form it by rubbing. By the above steps, a counter substrate with a selectively formed light-shielding layer can be manufactured.

[0152] This embodiment can be freely combined with Embodiments 1 to 4.

[0153] This embodiment can be freely combined with Embodiments 1 to 4.

[0154] (Embodiment 7) In this embodiment, the configuration of the liquid crystal display device of the present invention will be described with reference to FIG. 10. FIG. 10(A) is a top view of a liquid crystal panel in which a liquid crystal layer is sandwiched between an active matrix substrate 701 and a counter substrate 702, and FIG. 10(B) is a cross-sectional view taken along the line G-G' of FIG. 10(A). corresponding. Further, as the active matrix substrate 701, any one formed in any manner may be used, and as the counter substrate 702, those described in Embodiments 1 to 4 will be used. Here, the counter substrate shown in Embodiment 2 is illustrated. Here, the counter substrate shown in Embodiment 2 is illustrated. In FIG. 10(A), 705 is a pixel portion and 706 is a drive circuit portion. In this embodiment

[0155] the pixel portion 705 is formed within a region surrounded by a sealing material 703, and the drive circuit portion 70 6 is mounted outside that region. 6 is mounted outside that region.

[0156] Further, the sealing material 703 that seals the active matrix substrate 701 and the counter substrate 702 contains a gap material for maintaining the interval of the sealed space, and is formed by these. The space formed is filled with liquid crystal. Note that FIG. 10(A) shows the case where the active matrix substrate 701 and the counter substrate 702 are bonded together by a sealing material 703, and then liquid crystal is injected between the two substrates and sealed with a sealing material 704. However, the present invention is not limited to this method, and a method (ODF method) in which liquid crystal is dropped on one of the active matrix substrate 701 and the counter substrate 702 and then the two substrates are bonded together can also be used.

[0157] Next, the cross-sectional structure will be described with reference to FIG. 10(B). On the first substrate 707 forming the active matrix substrate 701, a pixel portion 705 is formed and includes a plurality of semiconductor elements typified by TFTs. Also, in the present embodiment, the drive circuit portion 706 mounted on the substrate includes a source line drive circuit and a gate line drive circuit.

[0158] In the pixel portion 705, a plurality of pixels are formed, and the first electrode 711, which is a pixel electrode, is electrically connected to the TFT 713.

[0159] On the other hand, on the second substrate 708 forming the counter substrate 702, a first light-shielding layer 716, a second light-shielding layer 717, and a second electrode 719 are formed. Also, an alignment film 720 is formed on the second electrode 719.

[0160] The second light-shielding layer 717 is provided in a region corresponding to the contact hole formed in the active matrix substrate 701.

[0161] In the liquid crystal display device shown in the present embodiment, on the active matrix substrate 701 The portion formed between the first electrode 711 formed thereon and the second electrode 719 formed on the counter substrate 702, with a liquid crystal layer 712 sandwiched therebetween, is the liquid crystal element. The portion formed between the first electrode 711 formed thereon and the second electrode 719 formed on the counter substrate 702, with a liquid crystal layer 712 sandwiched therebetween, is the liquid crystal element.

[0162] Also, 721 is a columnar spacer, which is provided to control the distance (cell gap) between the active matrix substrate 701 and the counter substrate 7 02. The columnar spacer 7 21 is formed by etching an insulating film into a desired shape. Note that spherical spacers may be used. Note that spherical spacers may be used.

[0163] Various signals and potentials supplied to the pixel portion 705 and the drive circuit portion 706 are supplied from the FPC 723 via the connection wiring 7 22. Note that the connection wiring 722 and the FPC 723 are electrically connected by an anisotropic conductive film or anisotropic conductive resin 724. Note that conductive pastes such as solder or silver paste may be used instead of the anisotropic conductive film or anisotropic conductive resin. Note that conductive pastes such as solder or silver paste may be used instead of the anisotropic conductive film or anisotropic conductive resin.

[0164] Also, although not shown, a polarizing plate is fixed to one or both surfaces of the active matrix substrate 701 and the counter substrate 702 by an adhesive. Note that a retardation plate may be provided in addition to the polarizing plate. Note that a retardation plate may be provided in addition to the polarizing plate.

[0165] (Embodiment 8) In this embodiment, a method for mounting a drive circuit in the liquid crystal display device of the present invention will be described with reference to FIG. 1 11.

[0166] In the case of FIG. 11(A), a source line drive circuit 802 and gate line drive circuits 803a and 803b are mounted around the pixel portion 801. That is, a mounting method using a known anisotropic conductive adhesive and anisotropic conductive film, a COG method, a wire bonding method, and a By performing a reflow process or the like using an underbump, the IC chip 805 is mounted on the substrate 800. As a result, the source line drive circuit 802 and the gate line drive circuits 803a, 803b, etc. are mounted. Note that the IC chip 805 is connected to an external circuit via an FPC (Flexible Printed Circuit) 806.

[0167] Note that a part of the source line drive circuit 802, for example, an analog switch, may be formed on the substrate, and the other parts may be separately mounted on an IC chip.

[0168] Also, in the case of FIG. 11(B), the pixel portion 801 and the gate line drive circuits 803a, 803b, etc. are formed on the substrate, and the source line drive circuit 802, etc. are separately mounted on an IC chip. That is, by mounting the IC chip 805 on the substrate 800 on which the pixel portion 801 and the gate line drive circuits 803a, 803b, etc. are formed by an implementation method such as the COG method, the source line drive circuit 802, etc. are mounted. Note that the IC chip 805 is connected to an external circuit via the FPC806.

[0169] Note that a part of the source line drive circuit 802, for example, an analog switch, may be formed on the substrate, and the other parts may be separately mounted on an IC chip.

[0170] Furthermore, in the case of FIG. 11(C), the source line drive circuit 802, etc. are mounted by the TAB method. Note that the IC chip 805 is connected to an external circuit via the FPC806. In FIG. 11(C), the source line drive circuit 802, etc. are mounted by the TAB method, but the gate line drive circuit, etc. may also be mounted by the TAB method.

[0171] When the IC chip 805 is implemented by the TAB method, a larger pixel portion can be provided for the substrate, and narrow bezeling can be achieved.

[0172] Alternatively, an IC formed on a glass substrate instead of the IC chip 805 (hereinafter referred to as a dry driver IC) may be provided. The IC chip 805 has restrictions on the shape of the mother substrate in order to extract the IC chip from a circular silicon wafer. On the other hand, since the mother substrate of the dry driver IC is glass and there are no restrictions on the shape, productivity can be increased. Therefore, the shape and dimensions of the driver IC can be freely set. For example, when the length of the long side of the driver IC is formed to be 15 to 80 mm, the required number can be reduced compared to the case of mounting an IC chip. As a result, the number of connection terminals can be reduced, and the manufacturing yield can be improved.

[0173] The driver IC can be formed using a crystalline semiconductor formed on a substrate, and the crystalline semiconductor may be formed by irradiating a continuous oscillation type laser beam. The semiconductor film obtained by irradiating a continuous oscillation type laser beam has few crystal defects and has large grain size crystal grains. As a result, a transistor having such a semiconductor film has good mobility and response speed, enables high-speed driving, and is suitable for the driver IC.

[0174] (Embodiment 9) In this embodiment, a liquid crystal module formed by connecting external circuits such as a power supply circuit and a controller to the liquid crystal display device of the present invention formed by implementing Embodiments 1 to 7 is a liquid crystal module that performs color display using white light, and will be described with reference to the cross-sectional view of FIG. 12.

[0175] As shown in FIG. 12, the active matrix substrate 901 and the counter substrate 902 are fixed by a sealing material 903, and a liquid crystal layer 905 is provided therebetween, forming a liquid crystal display panel .

[0176] In addition, the color filter 906 formed on the active matrix substrate 901 is necessary for performing color display. In the case of the RGB system, color filters corresponding to red, green, and blue are provided corresponding to each pixel . Alignment films 918 and 919 are formed on the inner sides of the active matrix substrate 901 and the counter substrate 902. In addition, polarizing plates 907 and 908 are disposed on the outer sides of the active matrix substrate 90 1 and the counter substrate 902. Further, a protective film 909 is formed on the surface of the polarizing plate 907, mitigating the impact from the outside . . A wiring substrate 912 is connected to the connection terminal 910 provided on the active matrix substrate 901 via an FPC 911 . External circuits 913 such as pixel drive circuits (IC chips

[0177] , driver ICs, etc.), control circuits, and power supply circuits are incorporated in the wiring substrate 912 . .

[0178] The cold cathode tube 914, the reflector 915, the optical film 916, and the inverter (not shown) are a backlight unit, and these serve as a light source to project light onto the liquid crystal display panel . The liquid crystal display panel, the light source, the wiring substrate 912, the FPC 911, etc. are held and protected by the bezel 917

[0179] (Embodiment 10) As an electronic device equipped with the liquid crystal display device of the present invention, a television device (simply a TV, or​ (also referred to as a television receiver), digital camera, digital video camera, telephone device (simply referred to as a telephone, phone), information terminals such as PDAs, electronic books, game machines, computer monitors for computers, computers, audio playback devices such as car audio and MP3 players , and image playback devices equipped with recording media such as home game machines. A preferred form thereof will be described with reference to FIG. 13.

[0180] The television device shown in FIG. 13(A) includes a main body 8001, a display unit 8002, etc. The liquid crystal display device of the present invention can be applied to the display unit 8002. The liquid crystal display device of the present invention can provide a television device capable of realizing highly visible image display.

[0181] The information terminal device shown in FIG. 13(B) includes a main body 8101, a display unit 8102, etc. The liquid crystal display device of the present invention can be applied to the display unit 8102. The liquid crystal display device of the present invention can provide an information terminal device capable of realizing highly visible image display.

[0182] The digital video camera shown in FIG. 13(C) includes a main body 8201, a display unit 8202, etc. The liquid crystal display device of the present invention can be applied to the display unit 8202. The liquid crystal display device of the present invention can provide a digital video camera capable of realizing highly visible image display.

[0183] The telephone shown in FIG. 13(D) includes a main body 8301, a display unit 8302, etc. The display unit 8302 can apply the liquid crystal display device of the present invention. The liquid crystal display device of the present invention can provide a telephone capable of realizing highly visible image display.

[0184] The monitor shown in Fig. 13(E) includes a main body 8401, a display unit 8402, etc. The display unit 8402 can apply the liquid crystal display device of the present invention. The liquid crystal display device of the present invention can provide a monitor capable of realizing highly visible image display.

[0185] (Embodiment 11) In Embodiments 1 to 10, the liquid crystal display device has been described. However, the present invention can also be used for a light-emitting device in addition to the liquid crystal display device. In the light-emitting device, when light is emitted from the contact hole portion, the optical path length through which light passes is different between the contact hole portion and the other portions, resulting in color unevenness.

[0186] In Fig. 14, 1000 is a substrate, 1001 is a thin film transistor, 1002 is an insulating film, 1003 is a contact hole, 1004 is a first electrode, 1005a is a source electrode, 100 5b is a drain electrode, 1006 is a layer including a light-emitting layer, 1007 is a second electrode, 1008 is a base plate, 1009 is a light-shielding layer, and 1010 is a space.

[0187] As shown in Fig. 14, similar to the case of the liquid crystal display device, when a light-shielding layer is formed in the region corresponding to the contact hole 1 003 of the light-emitting device, an image display without color unevenness is obtained.

[0188] Note that Fig. 14 shows a light-emitting device to which the configuration shown in Embodiment 2 is applied. However, any of the configurations of Embodiments 1 to 5 can be applied to the light-emitting device. Further, it is also possible to use a light-emitting device for the display unit of Embodiment 10.

Explanation of Reference Numerals

[0189] 100 Substrate​​​ 101 Thin film transistor 102 Insulating film 103 Contact hole 104 Pixel electrode 105a Source electrode 105b Drain electrode 106 Alignment film 107 Substrate 108 First light-shielding layer 109 Second light-shielding layer 110 Counter electrode 111 Alignment film 112 Liquid crystal layer 121 Portion where the insulating film is inclined 122 Second light-shielding layer 131 Contact hole 132 Second light-shielding layer 133 Contact hole 134 Second light-shielding layer 151 Gate line 152 Source line 153 Contact hole 154 Semiconductor layer 200 Substrate 201 Thin film transistor 202 Insulating film 203 Contact hole 204 Pixel electrode 205a Source electrode 205b Drain electrode 206 Alignment film 207 Substrate 208 Light-shielding layer 209 Coloring layer (color filter) 210 Counter electrode 211 Alignment film 212 Liquid crystal layer 221 Portion where the insulating film is inclined 222 Second coloring layer (color filter) 223 First coloring layer (color filter) 251 Gate line 252 Source line 253 Contact hole 254 Semiconductor layer 300 Substrate 301 Thin film transistor 302 Insulating film 303 Contact hole 304 Pixel electrode 305a Source electrode 305b Drain electrode 306 Alignment film 307 Substrate 308 First light-shielding layer 309 Second light-shielding layer 310 Coloring layer (color filter) 311 Counter electrode 312 Alignment film 313 Liquid crystal layer 321 Portion where the insulating film is inclined 322 Second light-shielding layer 323 First coloring layer (color filter) 324 Second coloring layer (color filter) 351 Gate line 352 Source line 354 Semiconductor layer 401 First light-shielding layer 402 Second light-shielding layer 500 Substrate 501 Light-shielding layer 502 R coloring resin 503 G coloring resin 504 B coloring resin 505 Counter electrode 506 Insulating film 601 Source electrode or drain electrode 602 Pixel electrode 611 Source electrode or drain electrode 612 Pixel electrode 613 Conductive layer 621 Source region or drain region 622 Pixel electrode 631 Source region or drain region 632 Pixel electrode 633 Conductive layer 701 Active matrix substrate 702 Counter substrate 703 Sealing material 704 Encapsulant 705 Pixel portion 706 Driving circuit section 707 First substrate 708 Second substrate 710 Liquid crystal element 711 First electrode 712 Liquid crystal layer 713 TFT 716 First light-shielding layer 717 Second light-shielding layer 719 Second electrode 720 Alignment film 721 Columnar spacer 722 Connection wiring 723 FPC 724 Anisotropic conductive resin 800 Substrate 801 Pixel portion 802 Source line driving circuit 803a Gate line driving circuit 803b Gate line driving circuit 805 IC chip 806 FPC 901 Active matrix substrate 902 Counter substrate 903 Sealing material 905 Liquid crystal layer 906 Coloring film 907 Polarizer 909 Protective film 910 Connection terminal 911 FPC 912 Wiring substrate 913 External circuit 914 Cold cathode tube 915 Reflector 916 Optical film 917 Bezel 918 Alignment film 1000 Substrate 1001 Thin film transistor 1002 Insulating film 1003 Contact hole 1004 First electrode 1005a Source electrode 1005b Drain electrode 1006 Layer including a light-emitting layer 1007 Second electrode 1008 Substrate 1009 Light-shielding layer 1010 Space 8001 Body 8002 Display unit 8101 Body 8102 Display unit 8201 Body 8202 Display unit 8301 Body 8302 Display unit 8401 Body 8402 Display unit

Claims

1. a semiconductor layer over a first substrate; a first conductive layer having a region overlapping the semiconductor layer and functioning as a gate line; a first insulating film having a region located above the first conductive layer and having a first contact hole and a second contact hole; a second conductive layer having a region connected to the semiconductor layer through the first contact hole and having a region functioning as a source line; a third conductive layer having a region connected to the semiconductor layer through the second contact hole; a second insulating film having a region located above the second conductive layer and above the third conductive layer, and having a third contact hole; a fourth conductive layer having a region connected to the third conductive layer through the third contact hole and having a region functioning as a pixel electrode; A first layer having a light blocking function; a second layer having a light blocking function; a second substrate above the first layer and above the second layer, the second insulating film is an organic resin film, the first layer has an opening; the first layer has a region overlapping an edge of the third contact hole; the second layer has an area overlapping the first conductive layer; the second layer has an area overlapping the fourth conductive layer; the second layer does not have a region overlapping the first contact hole; the second layer does not have a region overlapping the second contact hole; A liquid crystal display device, wherein the first layer has no area in contact with the second layer.

2. a semiconductor layer over a first substrate; a first conductive layer having a region overlapping the semiconductor layer and functioning as a gate line; a first insulating film having a region located above the first conductive layer and having a first contact hole and a second contact hole; a second conductive layer having a region connected to the semiconductor layer through the first contact hole and having a region functioning as a source line; a third conductive layer having a region connected to the semiconductor layer through the second contact hole; a second insulating film having a region located above the second conductive layer and above the third conductive layer, and having a third contact hole; a fourth conductive layer having a region connected to the third conductive layer through the third contact hole and having a region functioning as a pixel electrode; A first layer having a light blocking function; a second layer having a light blocking function; a second substrate above the first layer and above the second layer, the second insulating film is an organic resin film, the first layer has an opening; the first layer has a region overlapping with a sloped portion of the third contact hole; the second layer has an area overlapping the first conductive layer; the second layer has an area overlapping the fourth conductive layer; the second layer does not have a region overlapping the first contact hole; the second layer does not have a region overlapping the second contact hole; A liquid crystal display device, wherein the first layer has no area in contact with the second layer.

Images