Semiconductor module

Abstract

To inhibit breakage in a sealing resin in a semiconductor module.SOLUTION: A semiconductor module 100 includes: a semiconductor chip 40; a circuit board 20 on which the semiconductor chip is placed; a sealing resin 12 which seals the semiconductor chip and the circuit board and includes an epoxide resin; a reinforcement material 120 which is provided adhering to the sealing resin at the upper side of at least a part of the sealing resin and has a Young's modulus higher than that of the sealing resin; and a resin case 10 which encloses a space for housing the semiconductor chip. The sealing resin may be provided in the resin case.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a semiconductor module.

Background Art

[0002] Conventionally, a semiconductor module in which a semiconductor chip is mounted on a circuit board and the semiconductor chip and the circuit pattern of the circuit board are connected by a wiring portion such as a lead frame is known. In such a semiconductor module, a sealing resin is used to protect the semiconductor chip and the like. (For example, see Patent Document 1). Patent Document 1 Japanese Utility Model Laid-Open No. 6-34256

Summary of the Invention

Problems to be Solved by the Invention

[0003] In a semiconductor module, it is preferable to suppress breakage in the sealing resin.

Means for Solving the Problems

[0004] In order to solve the above problems, in one aspect of the present invention, a semiconductor module is provided. The semiconductor module may include a semiconductor chip. The semiconductor module may include a circuit board. The circuit board may have the semiconductor chip mounted thereon. The semiconductor module may include a sealing resin. The sealing resin may seal the semiconductor chip and the circuit board. The sealing resin may contain an epoxy resin. The semiconductor module may include a reinforcing material. The reinforcing material may be provided in close contact with at least a part of the sealing resin above the sealing resin. The reinforcing material may have a higher Young's modulus than the sealing resin.

[0005] Note that the above summary of the invention does not list all of the necessary features of the present invention. Also, sub-combinations of these feature groups can also be inventions.

Brief Description of the Drawings

[0006]

Figure 1

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Figure 12

MODE FOR CARRYING OUT THE INVENTION

[0007] Hereinafter, the present invention will be described through embodiments of the invention. However, the following embodiments do not limit the invention according to the claims. Also, not all combinations of features described in the embodiments are essential for the solution means of the invention. In the present specification and drawings, elements having substantially the same function and configuration are denoted by the same reference numerals to omit redundant description, and elements not directly related to the present invention are not shown. Also, in one drawing, elements having the same function and configuration may be represented by reference numerals, and other elements may be omitted.

[0008] In this specification, one side in the direction parallel to the depth direction of the semiconductor chip is referred to as "upper", and the other side is referred to as "lower". Of the two main surfaces of the substrate, layer, or other member, one surface is referred to as the upper surface and the other surface is referred to as the lower surface. The directions of "upper" and "lower" are not limited to the direction of gravity or the direction during the mounting of the semiconductor module.

[0009] In this specification, when explaining technical matters, orthogonal coordinate axes of the X-axis, Y-axis, and Z-axis may be used. The orthogonal coordinate axes only specify the relative positions of the components and do not limit a specific direction. For example, the Z-axis does not limit and indicate the height direction with respect to the ground. Note that the +Z-axis direction and the -Z-axis direction are opposite directions. When described as the Z-axis direction without specifying positive or negative, it means the directions parallel to the +Z-axis and the -Z-axis. In this specification, the orthogonal axes parallel to the upper surface and the lower surface of the semiconductor chip are the X-axis and the Y-axis. Also, the axis perpendicular to the upper surface and the lower surface of the semiconductor substrate is the Z-axis. In this specification, the direction of the Z-axis may sometimes be referred to as the depth direction. Also, in this specification, the directions parallel to the upper surface and the lower surface of the semiconductor substrate, including the X-axis and the Y-axis, may sometimes be referred to as the horizontal direction.

[0010] In this specification, when referred to as "identical" or "equal", it may include cases having errors due to manufacturing variations or the like. The error is, for example, within 10%.

[0011] FIG. 1 is a diagram showing an example of a semiconductor module 100 according to an embodiment of the present invention. In FIG. 1, for ease of understanding, the reinforcing member 120 is shown by a dotted line, and the sealing resin 12 is shown omitted.

[0012] The semiconductor module 100 may function as a power conversion device such as an inverter. The semiconductor module 100 includes one or more circuit boards 160. In this specification, the orthogonal axes on the surface where one or more circuit boards 160 are provided are the X-axis and the Y-axis, and the axis perpendicular to the XY plane is the Z-axis. In FIG. 1, an example of the arrangement of each member in the XY plane is shown.

[0013] The semiconductor module 100 of this example includes three circuit boards 160 that respectively constitute the arms of the U phase, V phase, and W phase. In the example of FIG. 1, the semiconductor module 100 includes a circuit board 160-1, a circuit board 160-2, and a circuit board 160-3. One or more semiconductor chips 40 are mounted on the circuit board 160. The semiconductor chip 40 is protected by a resin package such as a resin case 10 surrounding the circuit board 160 or a sealing resin 12 (see FIG. 3) filled in the resin case 10.

[0014] The semiconductor chip 40 may include an insulated gate bipolar transistor (IGBT), a diode such as a FWD (Free Wheel Diode), an RC (Reverse Conducting)-IGBT combining these, and a MOS transistor, etc.

[0015] The resin case 10 is provided so as to surround a space 94 that houses the semiconductor chip 40 and the circuit board 160. The resin case 10 has side walls 18. The side walls 18 divide the space 94 that houses the semiconductor chip 40 and the circuit board 160. In FIG. 1, the side walls 18 divide the space 94 into a space 94-1, a space 94-2, and a space 94-3. Circuit boards 160 are respectively provided in the space 94-1, the space 94-2, and the space 94-3.

[0016] One or more terminals 86 may be provided so as to protrude from the resin case 10. The terminal 86 may be electrically connected to the circuit board 160 via a terminal connection portion 198. Further, the resin case 10 may be provided with a through hole 84 into which a fastening member such as a screw for fixing a cooling portion 16 (see FIG. 3) is inserted.

[0017] In this example, the resin case 10 is formed of a resin such as a thermosetting resin that can be formed by injection molding or an ultraviolet curable resin that can be formed by UV molding. The resin may include one or more polymer materials selected from, for example, polyphenylene sulfide (PPS) resin, polybutylene terephthalate (PBT) resin, polyamide (PA) resin, acrylonitrile butadiene styrene (ABS) resin, and acrylic resin.

[0018] In this example, the encapsulation resin 12 is provided inside the resin case 10. The encapsulation resin 12 contains an epoxy resin. Also, the encapsulation resin 12 contains a curing agent. The encapsulation resin 12 encapsulates the semiconductor chip 40 and the circuit board 160. The semiconductor chip 40 and the circuit board 160 can be protected by the encapsulation resin 12. In this example, the encapsulation resin 12 is divided by the side wall 18 into encapsulation resin 12-1, encapsulation resin 12-2, and encapsulation resin 12-3.

[0019] The encapsulation resin 12 in this example contains a silica filler as an inorganic filler. The silica filler is inorganic fine particles that enhance the functionality of the resin. The silica filler contains SiO 2 The encapsulation resin 12 may contain 40 wt% or more of the silica filler. The encapsulation resin 12 may contain 50 wt% or more of the silica filler. The encapsulation resin 12 may contain 60 wt% or more of the silica filler. The encapsulation resin 12 may contain 70 wt% or more of the silica filler. The encapsulation resin 12 may contain 80 wt% or more of the silica filler. The encapsulation resin 12 may contain 90 wt% or less of the silica filler. In this example, the encapsulation resin 12 contains about 70 wt% of the silica filler. By including the silica filler in the encapsulation resin 12, the heat resistance of the encapsulation resin 12 can be enhanced. For example, by including the silica filler in the encapsulation resin 12, the heat resistance at a temperature of 175°C or higher can be guaranteed. Note that the encapsulation resin 12 may also contain additives such as a curing accelerator, a release agent, a coloring agent, and a flame retardant.

[0020] When the encapsulating resin 12 contains a large amount of silica filler, the encapsulating resin 12 is likely to be damaged. That is, when the semiconductor module 100 is deformed as a whole due to heat or the like, cracks are likely to occur in the encapsulating resin 12. When the encapsulating resin 12 is damaged, the protection of the semiconductor chip 40 is weakened, which may cause withstand voltage failure and reliability degradation.

[0021] The semiconductor module 100 in this example includes a plate-shaped reinforcing member 120. The reinforcing member 120 is provided in close contact with at least a part of the encapsulating resin 12 above the encapsulating resin 12. Close contact means, for example, that when the vertical direction is reversed, the reinforcing member 120 does not separate from the encapsulating resin 12. Also, close contact may mean that the relative positions of the encapsulating resin 12 and the reinforcing member 120 do not change even when vibration is applied from the outside. In the example of FIG. 1, the reinforcing members 120 (reinforcing members 120-1, 120-2, and 120-3) are provided in close contact with the encapsulating resins 12-1, 12-2, and 12-3, respectively. In the present embodiment, close contact may refer to material bonding or chemical bonding and may not include mechanical bonding such as screw fixing, press fitting, shrink fitting, and caulking.

[0022] The reinforcing member 120 has a higher Young's modulus than the encapsulating resin 12. The Young's modulus is a proportionality constant of strain and stress calculated from Hooke's law. That is, the Young's modulus is a measure of the hardness of a material. By providing the reinforcing member 120 with a higher Young's modulus than the encapsulating resin 12 in close contact with the encapsulating resin 12, the deformation of the encapsulating resin 12 can be suppressed even when the semiconductor module 100 is deformed as a whole. Therefore, damage to the encapsulating resin 12 can be suppressed.

[0023] The area of the reinforcing member 120 in top view may be smaller than the area of the sealing resin 12 in top view. In this example, the area of the reinforcing member 120-1 in top view is smaller than the area of the sealing resin 12-1 in top view. Also, the area of the reinforcing member 120-2 in top view is smaller than the area of the sealing resin 12-2 in top view. Further, the area of the reinforcing member 120-3 in top view is smaller than the area of the sealing resin 12-3 in top view. By making the area of the reinforcing member 120 in top view smaller than the area of the sealing resin 12 in top view, a location where the reinforcing member 120 is not provided above the sealing resin 12 can be provided. In the curing process of the sealing resin 12 described later, gas is generated from the sealing resin 12. By providing a location where the reinforcing member 120 is not provided above the sealing resin 12, the gas can be vented from the sealing resin 12. The area of the reinforcing member 120 may be equal to or less than half of the area of the sealing resin 12.

[0024] The reinforcing member 120 may contain glass. By the reinforcing member 120 containing glass, the Young's modulus of the reinforcing member 120 can be made higher than the Young's modulus of the sealing resin 12.

[0025] The reinforcing member 120 may be provided near the interface 14 between the resin case 10 and the sealing resin 12 in a top view. The reinforcing member 120 may be provided near each of the interfaces 14 in the X-axis direction and the Y-axis direction among the interfaces 14 between the resin case 10 and the sealing resin 12 in a top view. That the reinforcing member 120 is provided near the interface 14 between the resin case 10 and the sealing resin 12 means that the shortest distance between the reinforcing member 120 and the interface 14 between the resin case 10 and the sealing resin 12 may be within 5 mm. That the reinforcing member 120 is provided near the interface 14 between the resin case 10 and the sealing resin 12 means that the shortest distance between the reinforcing member 120 and the interface 14 between the resin case 10 and the sealing resin 12 may also be within 3 mm. That the reinforcing member 120 is provided near the interface 14 between the resin case 10 and the sealing resin 12 means that the shortest distance between the reinforcing member 120 and the interface 14 between the resin case 10 and the sealing resin 12 may also be within 1 mm. Further, that the reinforcing member 120 is provided near the interface 14 between the resin case 10 and the sealing resin 12 means that the shortest distance between the reinforcing member 120 and the interface 14 between the resin case 10 and the sealing resin 12 may be shorter than either the lateral width L1 or the longitudinal width L2 of the edge in the top view of the resin case 10. The shortest distance between the reinforcing member 120 and the interface 14 between the resin case 10 and the sealing resin 12 may be shorter than each of the lateral width L1 and the longitudinal width L2. By providing the reinforcing member 120 near the interface 14 between the resin case 10 and the sealing resin 12, deformation of the sealing resin 12 can be further suppressed.

[0026] FIG. 2 is a diagram showing an example of the circuit board 160-1. Also in FIG. 2, for ease of understanding, the reinforcing material 120 is shown by a dotted line, and the encapsulating resin 12 is shown omitted. Here, the circuit board 160-1 that represents one phase of the arm is exemplified, but the circuit boards 160 of the other phases have the same configuration. The circuit board 160-1 in this example has a circuit pattern 26 provided on one surface of the insulating substrate 20 and a heat sink 22 (see FIG. 3) provided on the other surface. The circuit pattern 26 and the heat sink 22 may be configured by directly bonding a copper plate, an aluminum plate, or a plate plated with these materials to the insulating substrate 20 such as silicon nitride ceramics or aluminum nitride ceramics, or by bonding through a brazing material layer. Note that the circuit board 160 may be a conductive member such as a copper plate or an aluminum plate with an insulating sheet bonded thereto. That is, it may be a plate-like member in which a conductive member and an insulating member are integrated.

[0027] The semiconductor chip 40 in this example is bonded to the circuit pattern 26 provided on the upper surface of the insulating substrate 20 via a bonding layer 30 (see FIG. 3) such as solder. Also, the upper surface of the semiconductor chip 40 is connected to the wiring portion via a bonding layer 32 (see FIG. 3) such as solder. The wiring portion in this example is the lead frame 50. The lead frame 50 connects the semiconductor chip 40 to the circuit pattern 26 via a bonding layer 34 (see FIG. 3) such as solder. The lead frame 50 is a member formed of a metal material such as copper or aluminum. At least a part of the surface of the lead frame 50 may be plated with nickel or the like. Also, at least a part of the surface of the lead frame 50 may be coated with resin or the like. The lead frame 50 may have a plate-like portion. The plate-like shape refers to a shape in which the areas of two main surfaces arranged opposite to each other are larger than the areas of other surfaces. The lead frame 50 may be formed by bending a single metal plate.

[0028] The circuit pattern 26 transmits signals or power by being electrically connected to the semiconductor chip 40 or the lead frame 50. The circuit pattern 26 may be configured to include a plurality of island-shaped regions 26A, 26B, and 26C. Also, a plurality of semiconductor chips 40 may be arranged in one island-shaped region of the circuit pattern 26. In the example of FIG. 2, a plurality of semiconductor chips 40 are arranged in each of the island-shaped regions 26A and 26B. Also, a plurality of semiconductor chips 40 arranged in one island-shaped region may be connected to the same island-shaped region by the lead frame 50. In the example of FIG. 2, a plurality of semiconductor chips 40 arranged in the island-shaped region 26A are connected in parallel to the same island-shaped region 26B by two lead frames 50 arranged in the Y-axis direction. Also, a plurality of semiconductor chips 40 arranged in the island-shaped region 26B are connected in parallel to the same island-shaped region 26C by two lead frames 50 arranged in the Y-axis direction. In the two lead frames 50, the distance Y1 in the Y-axis direction of the connection portion connected to the same island-shaped region 26B or 26C may be smaller than the distance Y2 in the Y-axis direction of the two semiconductor chips 40. Thereby, the difference in the path length of the current passing through the two semiconductor chips 40 arranged apart can be reduced.

[0029] The semiconductor chip 40 in this example is a vertical chip having electrodes (for example, an emitter electrode and a collector electrode) formed on the upper and lower surfaces. The semiconductor chip 40 is connected to the circuit pattern 26 via the bonding layer 30 by the electrode formed on the lower surface, and is connected to the lead frame 50 via the bonding layer 32 by the electrode formed on the upper surface. Note that the semiconductor chip 40 is not limited to a vertical chip. The semiconductor chip 40 may have an electrode connected to the circuit pattern 26 on the upper surface. In this case, the circuit pattern 26 and the electrode may be connected by a wire or the like.

[0030] The terminal connection portion 198 directly or indirectly connects the circuit pattern 26 and the terminal 86 shown in FIG. 1. The terminal connection portion 198 may be a plate or rod-shaped member formed of metal, or may be a wire-shaped member. Thereby, the semiconductor chip 40 and the terminal 86 are electrically connected.

[0031] The reinforcing member 120 may be provided above at least a part of the semiconductor chip 40 in a top view. In this example, in a top view, the reinforcing members 120-1 are respectively provided above at least a part of the four semiconductor chips 40. Near the semiconductor chip 40, thermal stress and the like are generated and deformation is likely to occur. Therefore, by providing the reinforcing member 120 above at least a part of the semiconductor chip 40 in a top view, the destruction of the sealing resin 12 near the semiconductor chip 40 can be suppressed.

[0032] In the example of FIG. 2, the reinforcing member 120 is provided so as to connect two semiconductor chips 40. That is, the reinforcing member 120 is arranged so as to overlap the two semiconductor chips 40 in a top view. The reinforcing member 120 may overlap a part of each semiconductor chip 40, or may overlap the whole. Also, the reinforcing member 120 may be provided linearly in a top view from above one semiconductor chip 40 to above the other semiconductor chip 40. In other examples, the reinforcing member 120 may be provided in a curved shape in a top view. In FIG. 2, the reinforcing member 120 is provided so as to connect the semiconductor chip 40-1 and the semiconductor chip 40-4. Also, in FIG. 2, the reinforcing member 120 is provided so as to connect the semiconductor chip 40-2 and the semiconductor chip 40-3. By adopting such a configuration, while providing the reinforcing member 120 above the semiconductor chip 40, the area of the reinforcing member 120 can be reduced. Note that the example of connecting two semiconductor chips 40 is not limited to the above. The reinforcing member 120 may be provided so as to connect two semiconductor chips 40 with a large temperature difference due to heat generation.

[0033] FIG. 3 is an example of a cross-sectional view taken along line A-A of FIG. 2. Note that, different from FIGS. 1 and 2, the reinforcing member 120 and the sealing resin 12 are also illustrated with solid lines. FIG. 3 shows an example of the arrangement of each member when each member is projected onto the XZ plane. In the cross section, the semiconductor module 100 includes an insulating substrate 20, a heat sink 22, a bonding layer 24, a cooling unit 16, a circuit pattern 26, bonding layers 30, 32, 34, semiconductor chips 40, a lead frame 50, a sealing resin 12, and a reinforcing member 120.

[0034] The heat dissipation plate 22 may cover at least a part or the whole of the lower surface of the insulating substrate 20. The bonding layer 24 bonds the heat dissipation plate 22 to the cooling part 16. The bonding layer 24 is solder or the like. The cooling part 16 contains a refrigerant such as water inside. The cooling part 16 is directly or indirectly connected to the lower surface of the resin case 10 via the heat dissipation plate 22 or the like, and cools the semiconductor chip 40.

[0035] The circuit pattern 26 is disposed on the upper surface of the insulating substrate 20. In this example, the circuit pattern 26 may be formed of the same material as the heat dissipation plate 22 such as copper, or may be formed of a different material. The semiconductor chip 40 in this example is connected to the upper surfaces of the island-shaped regions 26A and 26B of the circuit pattern 26 by the bonding layer 30. The bonding layer 30 bonds the semiconductor chip 40 with a conductive material such as solder.

[0036] The lead frame 50 in this example connects the semiconductor chip 40 and the island-shaped regions 26B and 26C of the circuit pattern 26. The lead frame 50 in this example has a chip connection part 52, a circuit pattern connection part 56, and a bridging part 54. The chip connection part 52 is a part bonded to the upper surface of the semiconductor chip 40 by the bonding layer 32. The circuit pattern connection part 56 is a part connected to the upper surfaces of the island-shaped regions 26B and 26C of the circuit pattern 26 by the bonding layer 34. The chip connection part 52 and the circuit pattern connection part 56 may be plate-shaped parts substantially parallel to the XY plane. Note that substantially parallel means, for example, a state where the angle is 10 degrees or less. In this example, the area of the chip connection part 52 is configured to be larger than the area of the circuit pattern connection part 56. The area of the chip connection part 52 and the area of the circuit pattern connection part 56 may be, for example, the upper surface areas of the plate-shaped parts connected to the semiconductor chip 40 and the island-shaped regions 26B and 26C of the circuit pattern 26.

[0037] The bridging portion 54 connects the chip connection portion 52 and the circuit pattern connection portion 56. The bridging portion 54 is arranged away from conductive members such as the circuit pattern 26. The bridging portion 54 in this example is arranged above the circuit pattern 26 and is provided so as to straddle the circuit pattern 26 etc. from the chip connection portion 52 to the circuit pattern connection portion 56.

[0038] The bridging portion 54 is provided with an opening 74 (see FIG. 2) for injecting the sealing resin 12 below the bridging portion 54. In the bridging portion 54 of this example, a plurality of openings 74 are provided inside the bridging portion 54 in the XY plane and near the center of the bridging portion 54 in the X-axis direction. The plurality of openings 74 may be provided in a region that is not near the center of the bridging portion 54 in the X-axis direction. Note that the opening 74 is not limited to the bridging portion 54 and may be provided in other parts of the lead frame 50 such as the chip connection portion 52 and the circuit pattern connection portion 56. Thereby, the sealing resin 12 can be surely spread above and below the lead frame 50.

[0039] The sealing resin 12 is provided inside the resin case 10. The sealing resin 12 may be filled in the space 94 of the resin case 10 so that the semiconductor chip 40, the lead frame 50, and the circuit pattern 26 are not exposed.

[0040] The reinforcing material 120 is provided in contact with the sealing resin 12 above the sealing resin 12. In this example, the reinforcing material 120 is provided on the upper surface 21 of the sealing resin 12. By providing the reinforcing material 120 on the upper surface 21 of the sealing resin 12, the breakage of the sealing resin 12 can be suppressed.

[0041] FIG. 4 is another example of the A-A cross-sectional view of FIG. 2. The semiconductor module 100 in FIG. 4 is different from the semiconductor module 100 in FIG. 3 in that the reinforcing material 120 is embedded in the sealing resin 12. Other configurations in FIG. 4 may be the same as those in FIG. 3.

[0042] When the reinforcing member 120 is provided on the upper surface 21 of the sealing resin 12 as shown in FIG. 3, a step is generated. Since the reinforcing member 120 is embedded in the sealing resin 12, the generated step can be eliminated. Therefore, when the semiconductor module 100 is incorporated into a device or the like, it can be easily assembled. A part of the reinforcing member 120 may be exposed from the sealing resin 12, or the whole may be surrounded by the sealing resin 12. Also, the sealing resin 12 may be provided above the reinforcing member 120.

[0043] FIG. 5 is a diagram showing another example of the semiconductor module 100. In the semiconductor module 100 of FIG. 5, the configuration of the reinforcing member 120 is different from that of the semiconductor module 100 of FIG. 1. Other configurations of FIG. 5 may be the same as those of FIG. 1.

[0044] The reinforcing member 120 in FIG. 5 has a cross shape protruding in the X-axis direction and the Y-axis direction respectively. Even with such a shape, breakage of the sealing resin 12 can be suppressed. Also, the reinforcing member 120 can be easily processed.

[0045] FIG. 6 is a diagram showing another example of the semiconductor module 100. In the semiconductor module 100 of FIG. 6, the configuration of the reinforcing member 120 is different from that of the semiconductor module 100 of FIG. 1. Other configurations of FIG. 6 may be the same as those of FIG. 1.

[0046] The reinforcing member 120 in FIG. 6 has a longitudinal direction in the Y-axis direction. Two reinforcing members 120-1 are arranged in the X-axis direction above the sealing resin 12-1. Two reinforcing members 120-2 are arranged in the X-axis direction above the sealing resin 12-2. Two reinforcing members 120-3 are arranged in the X-axis direction above the sealing resin 12-3. Even with such a shape, breakage of the sealing resin 12 can be suppressed. Also, the reinforcing member 120 can be easily processed.

[0047] FIG. 7 is a diagram showing another example of the semiconductor module 100. In the semiconductor module 100 of FIG. 7, the configuration of the reinforcing member 120 is different from that of the semiconductor module 100 of FIG. 1. Other configurations of FIG. 7 may be the same as those of FIG. 1.

[0048] The reinforcing member 120 in FIG. 7 has a longitudinal direction in the X-axis direction. Two reinforcing members 120-1 are arranged side by side in the Y-axis direction above the sealing resin 12-1. Two reinforcing members 120-2 are arranged side by side in the Y-axis direction above the sealing resin 12-2. Two reinforcing members 120-3 are arranged side by side in the Y-axis direction above the sealing resin 12-3. Even with such a shape, the breakage of the sealing resin 12 can be suppressed. Also, the reinforcing member 120 can be easily processed.

[0049] FIG. 8 is a diagram showing another example of the semiconductor module 100. The semiconductor module 100 in FIG. 8 has a different configuration of the reinforcing member 120 from that of the semiconductor module 100 in FIG. 1. Other configurations in FIG. 8 may be the same as those in FIG. 1.

[0050] The reinforcing member 120 in FIG. 8 has a shape that combines the reinforcing member 120 in FIG. 6 and the reinforcing member 120 in FIG. 7. Even with such a shape, the breakage of the sealing resin 12 can be suppressed. Also, it is possible to suppress the breakage of the sealing resin 12 over a wider range compared to FIGS. 6 and 7.

[0051] In the semiconductor modules 100 of FIGS. 1 and 5 to 8, in a top view, the reinforcing member 120 is provided for each space 94 divided by the side wall 18. Thereby, it becomes possible to perform reinforcement for each sealing resin 12 injected into the space 94. Also, as in the semiconductor modules 100 of FIGS. 6 and 7, in a top view, a plurality of reinforcing members 120 may be provided for each space 94 divided by the side wall 18.

[0052] FIG. 9 is a diagram showing another example of the semiconductor module 100. The semiconductor module 100 in FIG. 9 has a different configuration of the reinforcing member 120 from that of the semiconductor module 100 in FIG. 1. Specifically, the reinforcing member 120 is provided so as to straddle the side wall 18 in a top view. Other configurations in FIG. 9 may be the same as those in FIG. 1.

[0053] The reinforcing member 120 in FIG. 9 is integrally provided above the sealing resins 12-1, 12-2, and 12-3. The reinforcing member 120 is provided above the side wall 18. Even with such a shape, the breakage of the sealing resin 12 can be suppressed. Also, compared with the semiconductor modules 100 in FIGS. 1 and 5 to 8, the number of the reinforcing members 120 can be reduced.

[0054] Note that the area of the reinforcing member 120 in a top view may be smaller than the area of the sealing resin 12 in a top view. In the example of FIG. 9, the area of the reinforcing member 120 in a top view may be smaller than the sum of the areas of the sealing resins 12-1, 12-2, and 12-3 in a top view. By making the area of the reinforcing member 120 in a top view smaller than the area of the sealing resin 12 in a top view, a portion where the reinforcing member 120 is not provided above the sealing resin 12 can be provided. By providing a portion where the reinforcing member 120 is not provided above the sealing resin 12, gas can be exhausted from the sealing resin 12.

[0055] FIG. 10 is a diagram showing an example of an inverter 1000 including a semiconductor module 200. The inverter 1000 includes a semiconductor module 200, a gate driver substrate 300, a capacitor module 400, a control substrate 500, and a case portion 600. The inverter 1000 is a power conversion device that converts power.

[0056] The semiconductor module 200 in FIG. 10 is different from the semiconductor module 100 in FIG. 1 in that a plate-shaped gate driver substrate 300 is provided as a plate-shaped reinforcing member. The other configurations of the semiconductor module 200 in FIG. 10 may be the same as those of the semiconductor module 100 in FIG. 1.

[0057] Above the semiconductor module 200, a gate driver substrate 300 is provided. One or more gate drivers are mounted on the gate driver substrate 300. The gate driver controls the semiconductor chip 40 of the semiconductor module 200. The gate driver may control the gate voltage applied to the gate electrode of the semiconductor chip 40 of the semiconductor module 200. The gate driver is a wiring substrate on which wiring is patterned.

[0058] Above the semiconductor module 200, a capacitor module 400 and a control substrate 500 are provided. The capacitor module 400 smoothes the voltage applied to the semiconductor module 200. The control substrate 500 controls the gate driver mounted on the gate driver substrate 300. The case portion 600 houses the semiconductor module 200, the gate driver substrate 300, the capacitor module 400, and the control substrate 500.

[0059] FIG. 11 is a diagram showing an arrangement example of the semiconductor module 200 and the gate driver substrate 300 in a top view.

[0060] In FIG. 11, the encapsulation resin 12 of the semiconductor module 200 overlaps the gate driver substrate 300 in a top view. Then, the encapsulation resin 12 of the semiconductor module 200 is arranged in close contact with the gate driver substrate 300, that is, directly bonded. Thereby, by making the gate driver substrate 300 of a material having a higher Young's modulus than the encapsulation resin 12, the gate driver substrate 300 can function as a reinforcing material. That is, the reinforcing material may be a wiring substrate on which wiring is patterned. The reinforcing material may be the gate driver substrate 300. Therefore, even when no reinforcing material is provided separately from the gate driver substrate 300, breakage in the encapsulation resin 12 can be suppressed. In this case, it is preferable to provide a portion in the encapsulation resin 12 where the gate driver substrate 300 is not provided above.

[0061] FIG. 12 is a diagram showing an example of a method for installing the reinforcing member 120. The installation method includes a sealing resin introduction step S101, a temporary curing step S102, a reinforcing member installation step S103, and a main curing step S104.

[0062] In the sealing resin introduction step S101, the sealing resin 12 is introduced into the resin case 10. In the sealing resin introduction step S101, the sealing resin 12 is introduced so as to fill the space 94.

[0063] In the temporary curing step S102, the sealing resin 12 is temporarily cured. In the temporary curing step S102, the sealing resin 12 is not completely cured. The temperature in the temporary curing step S102 is, for example, 60°C. In the temporary curing step S102, gas is generated from the sealing resin 12.

[0064] In the reinforcing member installation step S103, the reinforcing member 120 is installed. Since the reinforcing member 120 is installed after the temporary curing step S102, the reinforcing member 120 can be fixed to the sealing resin 12.

[0065] In the main curing step S104, the sealing resin 12 is main-cured. Main curing means curing the sealing resin 12 at a temperature higher than the temporary curing temperature. The temperature in the main curing step S104 is, for example, 185°C. Also in the main curing step S104, gas is generated from the sealing resin 12. By performing the main curing step S104, the reinforcing member 120 can be completely fixed to the sealing resin 12.

[0066] As described above, the present invention has been described using embodiments, but the technical scope of the present invention is not limited to the scope described in the above embodiments. It is obvious to those skilled in the art that various changes or improvements can be made to the above embodiments. It is clear from the description of the claims that forms with such changes or improvements can also be included in the technical scope of the present invention.

Explanation of Reference Numerals

[0067] 10··Resin case, 12··Sealing resin, 14··Interface, 16··Cooling part, 18··Side wall, 20··Insulating substrate, 21··Upper surface, 22··Heat sink, 24··Bonding layer, 26··Circuit pattern, 30··Bonding layer, 32··Bonding layer, 34··Bonding layer, 40··Semiconductor chip, 50··Lead frame, 52··Chip connection part, 54··Crosslinked part, 56··Circuit pattern connection part, 74··Opening, 84··Through hole, 86··Terminal, 94··Space, 100··Semiconductor module, 120··Reinforcing material, 160··Circuit board, 198··Terminal connection part, 200··Semiconductor module, 300··Gate driver board, 400··Capacitor module, 500··Control board, 600··Case part, 1000··Inverter, L1··Width of the edge, L2··Length of the edge, Y1··Distance, Y2··Distance

Claims

1. A semiconductor chip, A circuit board on which the semiconductor chip is mounted, A sealing resin containing an epoxy resin for sealing the semiconductor chip and the circuit board, A reinforcing material provided in close contact with at least a part of the sealing resin above the sealing resin, and having a higher Young's modulus than the sealing resin, A resin case surrounding a space for housing the semiconductor chip and comprising, The sealing resin is provided inside the resin case, In a top view, the shortest distance from the reinforcing material to the interface between the resin case and the sealing resin is shorter than either the lateral width or the longitudinal width of the edge of the resin case, The reinforcing material is not joined to the resin case A semiconductor module.

2. A semiconductor chip, A circuit board on which the semiconductor chip is mounted, A sealing resin containing an epoxy resin for sealing the semiconductor chip and the circuit board, A reinforcing material provided in close contact with at least a part of the sealing resin above the sealing resin, and having a higher Young's modulus than the sealing resin, A resin case surrounding a space for housing the semiconductor chip and comprising, The sealing resin is provided inside the resin case, In a top view, the shortest distance from the reinforcing material to the interface between the resin case and the sealing resin is shorter than either the lateral width or the longitudinal width of the edge of the resin case, The area of the reinforcing material in a top view is smaller than the area of the sealing resin in a top view A semiconductor module.

3. The area of the reinforcing material in a top view is not more than half of the area of the sealing resin in a top view The semiconductor module according to claim 2.

4. A semiconductor chip, A circuit board on which the semiconductor chip is mounted, A sealing resin containing an epoxy resin for sealing the semiconductor chip and the circuit board, A reinforcing material provided in close contact with at least a part of the sealing resin above the sealing resin, and having a higher Young's modulus than the sealing resin and comprising, The reinforcing material is a gate driver board on which a gate driver for controlling the semiconductor chip is mounted, The area of the reinforcing material in a top view is not more than half of the area of the sealing resin in a top view A semiconductor module.

5. The resin case has side walls for dividing the space The semiconductor module according to any one of claims 1 to 3.

6. In a top view, the reinforcing material is provided for each of the divided spaces The semiconductor module according to claim 5.

7. The reinforcing material is provided across the side wall in a top view. The semiconductor module according to claim 5. **Claim 8** The semiconductor module further includes a cooling part directly or indirectly connected to the lower surface of the resin case. The semiconductor module according to any one of claims 1 to 3 or 5 to 7. **Claim 9** The reinforcing material is provided on the upper surface of the encapsulating resin. The semiconductor module according to any one of claims 1 to 8. **Claim 10** The reinforcing material is embedded in the encapsulating resin. The semiconductor module according to any one of claims 1 to 3 or 5 to 8. **Claim 11** The reinforcing material is a plate-like member. The semiconductor module according to any one of claims 1 to 10. **Claim 12** The reinforcing material contains glass. The semiconductor module according to any one of claims 1 to 11. **Claim 13** The reinforcing material is provided above at least a part of the semiconductor chip in a top view. The semiconductor module according to any one of claims 1 to 12. **Claim 14** The encapsulating resin contains a silica filler. The semiconductor module according to any one of claims 1 to 13.

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