Subsequent film and its evaluation method, and method for manufacturing semiconductor device and dicing / die bonding integrated film

Abstract

To provide an evaluation method for adhesive films that can be used to evaluate adhesive films with a thickness of 20 μm or less and that is useful for addressing the problem of peeling caused by warping of semiconductor chips in the semiconductor device manufacturing process.SOLUTION: An evaluation method of the present disclosure includes the process of performing a tack test with a heated probe, and the thickness of the adhesive film to be evaluated is 20 μm or less. The tack test is performed, for example, using an apparatus equipped with a stage supporting a sample of adhesive film and a probe that is movable in a vertical direction with respect to the stage and whose temperature can be set, with a polyimide film interposed between the stage and the sample.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to an adhesive film used in a manufacturing process of a semiconductor device, a method for evaluating the same, a method for manufacturing a semiconductor device, and a dicing / die bonding integrated film.

Background Art

[0002] Conventionally, a semiconductor device is manufactured through the following steps. First, a semiconductor wafer is attached to a dicing adhesive sheet, and in this state, the semiconductor wafer is diced into individual semiconductor chips (dicing step). Thereafter, a pick-up step, a pressure bonding step, a die bonding step, and the like are performed.

[0003] Patent Document 1 discloses a dicing die bond film having a function of fixing a semiconductor wafer in a dicing step and a function of bonding a semiconductor chip to a substrate in a die bonding step. In the dicing step, an adhesive chip is obtained by dicing a semiconductor wafer and an adhesive layer.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] Conventionally, as shown in FIG. 8, when relatively thin chips C1 to C4 are arranged in multiple stages on a substrate 30 via an adhesive layer A, peeling easily occurs between the first-stage chip C1 and the second-stage chip C2 due to the warping stress of the chips C1 to C4. Patent Document 1 states that problems caused by chip warping can be solved by setting the tensile storage modulus at 150°C before thermosetting of the die bond film within a predetermined range.

[0006] However, with the progress of the thinning of the adhesive film (die bond film), there are an increasing number of issues in the semiconductor manufacturing process that cannot be addressed by conventional metrics. According to the investigations of the present inventors, physical properties such as the tensile storage modulus, shear viscosity, and die share of the adhesive film do not necessarily show a correlation with the process evaluation results. Therefore, the present inventors decided to newly develop an evaluation method for the adhesive film that is useful for suppressing the occurrence of peeling in a semiconductor package due to chip warpage.

[0007] The present disclosure provides an evaluation method for an adhesive film that can be used to evaluate an adhesive film with a thickness of 20 μm or less and is useful for addressing the problem of peeling caused by chip warpage in the manufacturing process of semiconductor devices. Further, the present disclosure provides an adhesive film capable of sufficiently suppressing the occurrence of the above peeling, a method for manufacturing a semiconductor device using the same, and a dicing / die bonding integrated film including the above adhesive film.

Means for Solving the Problems

[0008] One aspect of the present disclosure relates to an evaluation method for an adhesive film used in the manufacturing process of semiconductor devices. This evaluation method includes a step of performing a tack test with a heated probe, and the thickness of the adhesive film to be evaluated is 20 μm or less.

[0009] As a result of observing the cross-section of a semiconductor package with an electron microscope, the inventors have found that the mode of delamination occurring within the semiconductor package is mainly delamination at the interface between the adhesive film and the chip, rather than cohesive failure of the adhesive film. From this, the inventors inferred that delamination occurs within a short time after the chip is pressed, and came to the recognition that it is necessary to capture the instantaneous adhesiveness (tackiness) of the adhesive film. Based on this recognition, they came up with the idea of evaluating the adhesive film by means of a tack test. Note that the tack test using a probe can be carried out in accordance with the method described in ASTM D-2979 (Standard Test Method for Pressure-Sensitive Tack of Adhesives Using an Inverted Probe Machine).

[0010] The above-mentioned tack test can be carried out using a device comprising a stage for supporting a sample of the adhesive film and a probe that is movable in the vertical direction with respect to the stage and whose temperature can be set. From the perspective of obtaining data with little variation, it is preferable to carry out the tack test with a resin film interposed between the stage and the sample. Since a thin adhesive film is the object of evaluation, if the surfaces of the stage and the probe are not strictly horizontal, the surface of the probe is likely to push the sample unilaterally, and it is difficult to efficiently obtain data with little variation in this way. By using a resin film, it is possible to avoid a state in which the surface of the probe pushes the sample unilaterally. Examples of the resin film include polyimide films. Polyimide films have appropriate elasticity and heat resistance.

[0011] From the correlation between the results of the above evaluation method and the presence or absence of delamination in an actually manufactured semiconductor package, when the adhesive film satisfies both of the following Conditions 1 and 2, the adhesive film can be determined to be good. (Condition 1) In the tack test with the probe temperature set to 100°C, the tack is 2.5 N / 5 mmφ or more. In the tack test with the probe temperature set at 120°C, the tack is 2.5 N / 5 mmφ or more (Condition 2).

[0012] One aspect of the present disclosure relates to a method for manufacturing a semiconductor device. The manufacturing method includes a step of preparing a laminated film including an adhesive film having a thickness of 20 μm or less, a step of attaching the laminated film to a wafer such that the adhesive film contacts the surface of the wafer, a step of producing an adhesive-chip-attached chip by singulating the wafer and the adhesive film, and a step of bonding the adhesive-chip-attached chip to the surface of a substrate or another chip, wherein the adhesive film is an adhesive film determined to be good in the above evaluation method. According to this method, peeling hardly occurs inside, and a highly reliable semiconductor device can be manufactured.

[0013] One aspect of the present disclosure relates to an adhesive film used in a semiconductor device manufacturing process. The adhesive film has a thickness of 20 μm or less and is determined to be good in the above evaluation method. One aspect of the present disclosure relates to a dicing / die bonding integrated film. The film includes a base film, an adhesive layer having a thickness of 20 μm or less, and an adhesive layer in this order, and the adhesive layer is composed of an adhesive film determined to be good in the above evaluation method.

Advantages of the Invention

[0014] According to the present disclosure, an evaluation method of an adhesive film that can target an adhesive film having a thickness of 20 μm or less and is useful for addressing the problem of peeling caused by warping of a semiconductor chip in a semiconductor device manufacturing process is provided. Further, according to the present disclosure, an adhesive film capable of sufficiently suppressing the occurrence of the above peeling, a method for manufacturing a semiconductor device using the same, and a dicing / die bonding integrated film including the above adhesive film are provided.

Brief Description of the Drawings

[0015]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Embodiments for Carrying Out the Invention

[0016] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In the following description, the same or corresponding parts are denoted by the same reference numerals, and redundant descriptions are omitted. Also, the positional relationships such as up, down, left, and right are based on the positional relationships shown in the drawings unless otherwise specified. The dimensional ratios in the drawings are not limited to the illustrated ratios. In this specification, (meth)acrylate means acrylate or the corresponding methacrylate. The same applies to other similar expressions such as (meth)acryloyl group and (meth)acrylic copolymer.

[0017] In the description and claims of this specification, when terms such as "left", "right", "front", "back", "top", "bottom", "above", "below" are used, these are for the purpose of explanation and do not necessarily mean that they are permanently in this relative position. Also, the term "layer" includes not only the structure of the shape formed over the entire surface but also the structure of the shape formed in part when observed as a plan view. "A or B" means that either A or B may be included, or both may be included.

[0018] In this specification, the term "step" includes not only an independent step but also a step in which the intended action of the step is achieved even if it cannot be clearly distinguished from other steps. Also, the numerical range indicated by "~" indicates a range that includes the numerical values described before and after "~" as the minimum value and the maximum value, respectively.

[0019] In this specification, the content of each component in a composition means the total amount of the plurality of substances corresponding to each component in the composition when there are a plurality of substances corresponding to each component in the composition, unless otherwise specified. Also, the exemplified materials may be used alone or in combination of two or more, unless otherwise specified. Also, in the numerical ranges described step by step in this specification, the upper limit value or the lower limit value of the numerical range at a certain step may be replaced by the upper limit value or the lower limit value of the numerical range at another step. Also, in the numerical ranges described in this specification, the upper limit value or the lower limit value of the numerical range may be replaced by the value shown in the examples.

[0020] <Method for Evaluating Adhesive Film> The evaluation method of the adhesive film according to this embodiment includes a step of performing a tack test with a heated probe. The adhesive film to be evaluated is used in the manufacturing process of semiconductor devices. The thickness of the adhesive film is 20 μm or less, and may be 18 μm or less, 15 μm or less, 12 μm or less, or 10 μm or less. The lower limit of the thickness of the adhesive film is not particularly limited, and may be, for example, 1 μm or 5 μm. When the thickness of the adhesive film is 20 μm or less, a thinning type of semiconductor device can be realized. On the other hand, when it is 1 μm or more, it is easy to ensure sufficient adhesive strength.

[0021] FIG. 1 is a cross-sectional view schematically showing an example of an apparatus for performing a tack test. The apparatus 10 shown in this figure includes a stage 1, a probe 2, and a pressing jig 3. The probe 2 is pressed against the sample S (adhesive film) on the stage 1, and the adhesive force during the process of pulling it away is measured. The probe 2 is movable in the vertical direction with respect to the stage 1 and its temperature can be set. The tip of the probe 2 is made of stainless steel and has a cylindrical shape. The tip surface of the probe 2 is sufficiently flat and smooth. The pressing jig 3 is for pressing the sample S on the stage so that the sample S does not stick to the probe 2 and move upward. By converting the load applied to the probe 2 into an electrical signal, data on the adhesive force of the sample can be obtained. The tack test can be carried out using a commercially available apparatus (for example, the tacking tester TAC1000 (trade name), manufactured by Reska Corporation).

[0022] The conditions of the tack test may be within the following ranges. · Temperature of the stage 1: 20 - 25°C (room temperature) · Temperature of the probe 2: 80 - 140°C · Entering speed of the probe 2: 0.5 - 2.0 mm / second · Pressing force: 0.05 - 0.2 MPa · Pressing time: 0.5 - 5 seconds · Pulling - away speed of the probe 2: 0.5 - 5.0 mm / second

[0023] From the perspective of obtaining data with little variation, as shown in Fig. 1, it is preferable to conduct a tack test with a polyimide film 5 (resin film) interposed between the stage 1 and the sample S. The thickness of the polyimide film 5 may be, for example, 50 to 200 μm or 100 to 150 μm. The tensile modulus of the polyimide film 5 is, for example, 2.5 to 4.5 GPa. This tensile modulus means a value measured in accordance with the method described in ASTM D-882. The heat resistance temperature of the polyimide film 5 is, for example, 250 to 320 °C. Here, the case of using the polyimide film 5 is exemplified, but other resin films may also be used. The resin film may have elasticity comparable to that of the polyimide film and heat resistance above the probe setting temperature. Specific examples thereof include aramid films, polyphenylene sulfide films, polyethylene naphthalate films, polyethylene terephthalate films, and the like.

[0024] From the correlation between the results of the evaluation method by the tack test and the presence or absence of peeling in the actually manufactured semiconductor package, when the adhesive film satisfies both of the following conditions 1 and 2, the adhesive film can be determined to be good. (Condition 1) In the tack test with the probe temperature set to 100 °C, the tack is 2.5 N / 5 mmφ or more. (Condition 2) In the tack test with the probe temperature set to 120 °C, the tack is 2.5 N / 5 mmφ or more.

[0025] When determining whether the adhesive film satisfies Conditions 1 and 2, the tack test is carried out under the following conditions. · Temperature of stage 1: 25 °C · Temperature of probe 2: 100 °C or 120 °C · Entering speed of probe 2: 1.0 mm / second · Pressing force: 0.1 MPa · Pressing time: 1.0 second · Pulling speed of probe 2: 1.0 mm / second · Tip surface of probe 2: Circular with a diameter of 5 mm

[0026] In the tack test with the probe temperature set at 100°C, as described above, the tack is 2.5 N / 5 mmφ or more (Condition 1), but this value may also be 3.0 N / 5 mmφ or more. The upper limit value of this value is, for example, 6.0 N / 5 mmφ. In the tack test with the probe temperature set at 120°C, as described above, the tack is 2.5 N / 5 mmφ or more (Condition 2), but this value may also be 3.0 N / 5 mmφ or more. The upper limit value of this value is, for example, 6.0 N / 5 mmφ.

[0027] <Dicing·Die Bonding Integrated Film> The adhesive film that satisfies both Conditions 1 and 2 can be applied to the adhesive layer of the dicing·die bonding integrated film. FIG. 2(a) is a plan view schematically showing the dicing·die bonding integrated film according to the present embodiment, and FIG. 2(b) is a schematic cross-sectional view taken along line B-B of FIG. 2(a). The dicing·die bonding integrated film 20 (hereinafter, sometimes simply referred to as "film 20") includes a base film 11, an adhesive layer 13, and an adhesive layer 15 in this order. The adhesive layer 15 is made of an adhesive film that satisfies both of the above Conditions 1 and 2. In the present embodiment, an embodiment in which a laminate of the adhesive layer 13 and the adhesive layer 15 is formed on the square base film 11 is illustrated, but the base film 11 has a predetermined length (for example, 100 m or more), and the laminate of the adhesive layer 13 and the adhesive layer 15 is arranged at a predetermined interval so as to be aligned in the longitudinal direction thereof. This mode may also be used.

[0028] Examples of the base film 11 include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. The base film 11 may be subjected to surface treatments such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment, if necessary.

[0029] The adhesive layer 13 has a first surface F1 facing the base film 11 and a second surface F2 on the opposite side thereof. The adhesive layer 13 is formed, for example, through a process of coating a coating liquid containing a resin composition having an appropriate adhesive force on the surface of the plastic film. The adhesive layer 13 may have a property that its adhesive force decreases when irradiated with ultraviolet rays, for example.

[0030] The adhesive layer 15 is provided so as to cover the central portion of the second surface F2 of the adhesive layer 13. As described above, the adhesive layer 15 is made of an adhesive film (film-shaped adhesive) that satisfies both Conditions 1 and 2. The adhesive layer 15 is made of a thermosetting resin composition and has excellent adhesive force (tackiness). By using the adhesive layer 15 to fabricate a semiconductor device, peeling due to chip warping can be sufficiently suppressed within the semiconductor device.

[0031] The adhesive layer 15 contains, for example, a thermosetting resin (hereinafter sometimes referred to as “component (A)”), a curing agent (hereinafter sometimes referred to as “component (B)”), and an elastomer (hereinafter sometimes referred to as “component (C)”). In addition to the component (A), the component (B), and the component (C), the adhesive layer 15 may further contain an inorganic filler (hereinafter sometimes referred to as “component (D)”), a coupling agent (hereinafter sometimes referred to as “component (E)”), a curing accelerator (hereinafter sometimes referred to as “component (F)”), and other components. The adhesive layer 15 may be one that can reach a fully cured (C-stage) state after curing treatment through a semi-cured (B-stage) state.

[0032] (A) component: Thermosetting resin From the viewpoint of adhesiveness, the component (A) may contain an epoxy resin and may be composed of one or more epoxy resins. As the component (A), the adhesive layer 15 contains, for example, an epoxy resin having a fluorene skeleton (hereinafter sometimes referred to as “component (A1)”).

[0033] (A1) component is, for example, a compound having a fluorene skeleton in the molecule and having an epoxy group. The (A1) component can be used without particular limitation as long as it is a compound satisfying such conditions. By including the (A1) component as the thermosetting resin, the adhesive layer 15 can be excellent in the fracturability due to cooling expansion and also excellent in the adhesiveness to the wafer. The inventors of the present disclosure consider the reason for such an effect as follows. Since the fluorene skeleton has a rigid and sterically bulky structure, it is presumed that molecules of other materials can enter the gaps in the structure. Therefore, the (A1) component is likely to be miscible with an elastomer (for example, acrylic rubber), and it is considered that the properties of the elastomer are modified from those that are flexible and difficult to be cut to those that are hard and easy to be cut. Along with this, it is considered that the adhesiveness to the wafer is also improved by the improvement of the elastic modulus.

[0034] (A1) component may be, for example, an epoxy resin represented by the following general formula (X).

[0035]

Chemical formula

[0036] In formula (X), Z 1 and Z 2 each independently represents a divalent aromatic hydrocarbon group. Z 1 and Z 2may be the same or different, and may be the same. The divalent aromatic hydrocarbon group is a monocyclic aromatic hydrocarbon (for example, benzene), or a polycyclic aromatic hydrocarbon (for example, bicyclic aromatic hydrocarbons such as naphthalene and indene; tricyclic aromatic hydrocarbons such as anthracene, phenanthrene, dihydrophenanthrene, and fluorene; tetracyclic aromatic hydrocarbons such as benzoanthracene, benzophenanthrene, benzofluorene, pyrene, and fluoranthene, etc.). Examples include a group obtained by removing two hydrogen atoms directly bonded to the carbon atoms constituting the ring. The divalent aromatic hydrocarbon group includes a group (for example, biphenyldiyl group, terphenyldiyl group, etc.) obtained by removing two hydrogen atoms directly bonded to the carbon atoms constituting the ring from an aromatic hydrocarbon formed by connecting a plurality of these aromatic hydrocarbons. The divalent aromatic hydrocarbon group may be a benzenediyl group (phenylene group) or a naphthalenediyl (naphthalenylene group).

[0037] The fluorene skeleton in the epoxy resin represented by formula (X), and Z 1 and Z 2 The divalent aromatic hydrocarbon group represented by may have a substituent. Examples of the substituent include an alkyl group such as a methyl group, an ethyl group, and a propyl group; a cycloalkyl group such as a cyclopentyl group and a cyclohexyl group; an aryl group such as a phenyl group and a naphthyl group; an aralkyl group such as a benzyl group; an acyl group such as an acetyl group, a propionyl group, and a benzoyl group; an alkoxy group such as a methoxy group, an ethoxy group, a propyloxy group, and an isopropyloxy group; an alkoxycarbonyl group such as a methoxycarbonyl group and an ethoxycarbonyl group; a cyano group; a carboxyl group; a nitro group; an amino group; a substituted amino group (for example, a mono- or dialkylamino group, etc.); a halogen atom such as a fluorine atom and a chlorine atom, etc.

[0038] In formula (X), R 1A and R 2A each independently represents an alkylene group having 1 to 10 carbon atoms. R 1A and R 2AThey may be the same or different, and may be the same. Examples of the alkylene group include linear or branched alkylene groups having 1 to 10 carbon atoms such as a methylene group, an ethylene group, a propylene group, a trimethylene group, a tetramethylene group, and a hexamethylene group. The alkylene group may be an alkylene group having 2 to 6 carbon atoms, or may be an alkylene group having 2 or 3 carbon atoms.

[0039] In formula (X), p1 and p2 each independently represent an integer of 0 or more. p1 and p2 may be the same or different, and may be the same. p1 and p2 may be an integer of 0 to 4, or may be an integer of 1 to 4.

[0040] In formula (X), R 1B , R 1C , R 1D , R 1E , R 1F , R 2B , R 2C , R 2D , R 2E , and R 2F each independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms. R 1B , R 1C , R 1D , R 1E , R 1F , R 2B , R 2C , R 2D , R 2E , and R 2F may be the same or different. Examples of the alkyl group having 1 to 6 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, an s-butyl group, a t-butyl group, a pentyl group, and a hexyl group. R 1B , R 1C , R 1D , R 1E , R 1F , R 2B , R 2C , R 2D , R 2E , and R 2F may be a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, or may be a hydrogen atom.

[0041] Commercially available epoxy resins represented by general formula (X) include, for example, PG-100, EG-200, and CG-500 (product names, all manufactured by Osaka Gas Chemicals Co., Ltd.).

[0042] The epoxy equivalent of the (A1) component is not particularly limited, but may be 80 to 600 g / eq, 100 to 500 g / eq, or 200 to 400 g / eq. When the epoxy equivalent of the (A1) component is in this range, better reactivity and flowability tend to be obtained.

[0043] The content of the (A1) component may be 40 to 100% by mass based on the total mass of the (A) component. When the content of the (A1) component is in this range, the effects of the present disclosure tend to be more pronounced. The content of the (A1) component may be 50% by mass or more, 60% by mass or more, 70% by mass or more, or 80% by mass or more based on the total mass of the (A) component.

[0044] The content of the (A1) component may be 1 mass% or more, 3 mass% or more, or 5 mass% or more, and may be 30 mass% or less, 20 mass% or less, or 15 mass% or less, based on the total mass of the adhesive layer 15. When the content of the (A1) component is 1 mass% or more, based on the total mass of the adhesive layer 15, the elastic modulus after curing tends to be better. When the content of the (A1) component is 30 mass% or less, based on the total mass of the adhesive layer 15, the flexibility before curing tends to be better.

[0045] Component (A) may further contain, in addition to component (A1), an epoxy resin having no fluorene skeleton in the molecule (hereinafter sometimes referred to as “component (A2)”). Examples of component (A2) include, for example, bisphenol A type epoxy resin; bisphenol F type epoxy resin; bisphenol S type epoxy resin; phenol novolac type epoxy resin; cresol novolac type epoxy resin; bisphenol A novolac type epoxy resin; bisphenol F novolac type epoxy resin; stilbene type epoxy resin; triazine skeleton-containing epoxy resin; triphenol methane type epoxy resin; biphenyl type epoxy resin; xylylene type epoxy resin; biphenyl aralkyl type epoxy resin; naphthalene type epoxy resin; polyfunctional phenols, diglycidyl ether compounds of polycyclic aromatics such as anthracene, and the like. Among these, component (A2) may contain a cresol novolac type epoxy resin.

[0046] The epoxy equivalent of component (A2) is not particularly limited, but may be 80 to 600 g / eq, 100 to 500 g / eq, or 200 to 400 g / eq. When the epoxy equivalent of component (A1) is in such a range, better reactivity and fluidity tend to be obtained.

[0047] The content of component (A2) may be 0 to 60% by mass based on the total mass of component (A). The content of component (A2) may be 50% by mass or less, 40% by mass or less, 30% by mass or less, or 20% by mass or less based on the total mass of component (A).

[0048] The content of component (A) may be 1% by mass or more, 3% by mass or more, or 5% by mass or more, and may be 30% by mass or less, 20% by mass or less, or 15% by mass or less based on the total mass of the adhesive layer 15. When the content of component (A) is 1% by mass or more based on the total mass of the adhesive layer 15, the elastic modulus after curing tends to be more excellent. When the content of component (A) is 30% by mass or less based on the total mass of the adhesive layer 15, the flexibility before curing tends to be more excellent.

[0049] (B) component: curing agent (A) As the curing agent, those generally used can be used. When the (A) component contains an epoxy resin (consisting of one or more epoxy resins), examples of the (B) component include phenolic resins, ester compounds, aromatic amines, aliphatic amines, acid anhydrides, etc. Among these, from the viewpoints of reactivity and stability over time, the (B) component may be a phenolic resin.

[0050] The phenolic resin can be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule. Examples of the phenolic resin include novolak-type phenolic resins obtained by condensing or co-condensing phenols such as phenol, cresol, resorcinol, catechol, bisphenol A, bisphenol F, phenylphenol, aminophenol, etc. and / or naphthols such as α-naphthol, β-naphthol, dihydroxynaphthalene, etc. with a compound having an aldehyde group such as formaldehyde under an acidic catalyst, allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenolic novolak, phenolic resins such as phenol, etc. and / or naphthols and phenol aralkyl resins, naphthol aralkyl resins, biphenyl aralkyl-type phenolic resins, phenyl aralkyl-type phenolic resins, etc. synthesized from dimethoxyparaxylene or bis(methoxymethyl)biphenyl.

[0051] The hydroxyl equivalent of the phenolic resin may be 70 g / eq or more, or 70 to 300 g / eq. When the hydroxyl equivalent of the phenolic resin is 70 g / eq or more, the storage modulus tends to be more improved, and when it is 300 g / eq or less, it becomes possible to prevent problems caused by the generation of foaming, outgassing, etc.

[0052] The softening point of the phenolic resin may be 90°C or higher, and may also be 95°C or higher, 100°C or higher, 105°C or higher, 110°C or higher, or 115°C or higher. The upper limit of the softening point of the phenolic resin may be, for example, 200°C or lower. Note that the softening point means a value measured by the ring and ball method in accordance with JIS K7234.

[0053] (B) The content may be 1% by mass or more, 2% by mass or more, or 3% by mass or more, and may be 20% by mass or less, 15% by mass or less, or 10% by mass or less, based on the total mass of the adhesive layer 15.

[0054] When component (A) is an epoxy resin and component (B) is a phenolic resin, the ratio of the epoxy equivalent of the epoxy resin to the hydroxyl equivalent of the phenolic resin (epoxy equivalent of the epoxy resin / hydroxyl equivalent of the phenolic resin) may be 0.30 / 0.70 to 0.70 / 0.30, 0.35 / 0.65 to 0.65 / 0.35, 0.40 / 0.60 to 0.60 / 0.40, or 0.45 / 0.55 to 0.55 / 0.45 from the viewpoint of curability. When the equivalent ratio is 0.30 / 0.70 or more (the epoxy equivalent of the epoxy resin is 0.30 or more), a more sufficient curability tends to be obtained. When the equivalent ratio is 0.70 / 0.30 or less (the epoxy equivalent of the epoxy resin is 0.70 or less), it is possible to prevent the viscosity from becoming too high and obtain more sufficient fluidity.

[0055] (A) The total content of component (A) and component (B) may be 1% by mass or more, 5% by mass or more, or 10% by mass or more, based on the total mass of the adhesive layer 15. When the total content of component (A) and component (B) is in such a range, the adhesiveness tends to be further improved. (A) The total content of component (A) and component (B) may be 40% by mass or less, 30% by mass or less, or 20% by mass or less, based on the total mass of the adhesive layer 15, from the viewpoint of handleability.

[0056] (C) Component: Elastomer Examples of the component (C) include acrylic resins, polyester resins, polyamide resins, polyimide resins, silicone resins, and butadiene resins; modified products of these resins, and the like. These may be used alone or in combination of two or more. Among these, the component (C) may be an acrylic resin (acrylic rubber) having, as a main component, a structural unit derived from a (meth)acrylic acid ester because it has less ionic impurities and is more excellent in heat resistance, it is easier to ensure connection reliability of a semiconductor device, and it is more excellent in fluidity. The content of the structural unit derived from the (meth)acrylic acid ester in the component (C) may be, for example, 70% by mass or more, 80% by mass or more, or 90% by mass or more based on the total amount of the structural units. The acrylic resin (acrylic rubber) may contain a structural unit derived from a (meth)acrylic acid ester having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group.

[0057] (C) component's glass transition temperature (Tg) may be 5°C or higher, and may also be 10°C or higher. When the Tg of (C) component is 5°C or higher, it becomes possible to further improve the adhesiveness of the adhesive layer 15, and furthermore, it tends to be able to prevent the flexibility of the adhesive layer 15 from becoming too high. As a result, it becomes easier to cut the adhesive layer 15 during wafer dicing, and it becomes possible to prevent the generation of burrs. The upper limit of the Tg of (C) component is not particularly limited, but for example, it may be 55°C or lower, 50°C or lower, 45°C or lower, 40°C or lower, 35°C or lower, 30°C or lower, or 25°C or lower. When the Tg of (C) component is 55°C or lower, it tends to be able to suppress the decrease in the flexibility of the adhesive layer 15. As a result, when attaching the adhesive layer 15 to the wafer, it tends to be easier to sufficiently embed voids. Also, it becomes possible to prevent chipping during dicing due to the decrease in the adhesion to the wafer. Here, the glass transition temperature (Tg) means the value measured using a DSC (Differential Scanning Calorimeter) (for example, manufactured by Rigaku Corporation, Thermo Plus 2). The Tg of (C) component can be adjusted to a desired range by adjusting the types and contents of the structural units constituting (C) component (when (C) component is an acrylic resin (acrylic rubber), the structural units derived from (meth)acrylate).

[0058] (C) component's weight average molecular weight (Mw) may be 100,000 or higher, 300,000 or higher, or 500,000 or higher, and may be 3,000,000 or lower, 2,000,000 or lower, or 1,000,000 or lower. When the Mw of (C) component is within such a range, film formability, film strength, flexibility, tackiness, etc. can be appropriately controlled, and it has excellent reflowability and can improve the embedding property. Here, Mw means the value measured by gel permeation chromatography (GPC) and converted using a calibration curve with standard polystyrene.

[0059] (C) component's commercially available products include SG-P3, SG-80H (both manufactured by Nagase ChemteX Corporation), KH-CT-865 (manufactured by Hitachi Chemical Co., Ltd.), etc.

[0060] (C) component content may be 30% by mass or more, 40% by mass or more, or 45% by mass or more based on the total mass of the adhesive layer 15. When the content of (C) component is in such a range, it tends to be excellent in thin film coating property. The content of (C) component may be 80% by mass or less, 70% by mass or less, or 65% by mass or less based on the total mass of the adhesive layer 15. When the content of (C) component is in such a range, the contents of (A) component and (B) component can be sufficiently ensured, and it tends to be compatible with other properties.

[0061] (D) component: Inorganic filler Examples of (D) component include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, silica, etc. These may be used alone or in combination of two or more. Among these, (D) component may be silica from the viewpoint of adjusting the melt viscosity. The shape of (D) component is not particularly limited, but may be spherical.

[0062] The average particle size of (D) component may be 0.7 μm or less, 0.6 μm or less, or 0.5 μm or less from the viewpoints of fluidity and storage elastic modulus. The average particle size of (D) component may be, for example, 0.01 μm or more. Here, the average particle size means a value obtained by conversion from the BET specific surface area.

[0063] (D) component content may be 60% by mass or less, 50% by mass or less, or 45% by mass or less based on the total mass of the adhesive layer 15. When the content of (D) component is in such a range, it tends to be excellent in thin film coating property. The content of (D) component may be 10% by mass or more, 15% by mass or more, or 20% by mass or more based on the total mass of the adhesive layer 15.

[0064] (E) component: Coupling agent (E) component may be a silane coupling agent. Examples of the silane coupling agent include γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3-(2-aminoethyl)aminopropyltrimethoxysilane, etc.

[0065] (F) component: curing accelerator Examples of the (F) component include imidazoles and their derivatives, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, etc. These may be used alone or in combination of two or more. Among these, from the viewpoint of reactivity, the (F) component may be imidazoles and their derivatives.

[0066] Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, etc. These may be used alone or in combination of two or more.

[0067] The adhesive layer 15 may further contain other components. Examples of the other components include pigments, ion scavengers, antioxidants, etc.

[0068] The total content of the (E) component, (F) component, and other components may be 0.1% by mass or more, 0.3% by mass or more, or 0.5% by mass or more, and may be 20% by mass or less, 10% by mass or less, or 5% by mass or less based on the total mass of the adhesive layer 15.

[0069] <Semiconductor device> FIG. 3 is a cross-sectional view schematically showing the semiconductor device according to this embodiment. The semiconductor device 50 shown in this figure includes a substrate 30, four chips C1, C2, C3, C4 laminated on the surface of the substrate 30, wires W1, W2, W3, W4 electrically connecting electrodes (not shown) on the surface of the substrate 30 and the four chips C1, C2, C3, C4, and a sealing layer 35 sealing these.

[0070] The substrate 30 is, for example, an organic substrate, or may be a metal substrate such as a lead frame. From the viewpoint of suppressing the warpage of the semiconductor device 50, the thickness of the substrate 30 is, for example, 70 to 140 μm, and may be 80 to 100 μm.

[0071] The four chips C1, C2, C3, and C4 are laminated via the cured product 15c of the adhesive sheet 15p. The shapes of the chips C1, C2, C3, and C4 in plan view are, for example, square or rectangular. The area of the chips C1, C2, C3, and C4 in plan view is 30 to 250 mm 2 and may be 40 to 200 mm 2 or 50 to 150 mm 2 and may be. The length of one side of the chips C1, C2, C3, and C4 in plan view is, for example, 6.0 mm or more, and may be 7.0 to 18 mm or 8.0 to 15 mm. The thickness of the chips C1, C2, C3, and C4 is, for example, 10 to 150 μm, and may be 20 to 80 μm. Note that the lengths of one side of the four chips C1, C2, C3, and C4 may be the same or different from each other, and the same applies to the thickness. Also, the four chips C1, C2, C3, and C4 may be relatively small in size. That is, the area of the chips C1, C2, C3, and C4 may be less than 30 mm 2 and may be, for example, 0.1 to 20 mm 2 or 1 to 15 mm 2 and may be.

[0072] <Chip with Adhesive Sheet> FIG. 4 is a cross-sectional view schematically showing an example of a chip with an adhesive sheet. The chip with an adhesive sheet 25 shown in FIG. 4 is composed of an adhesive sheet 15p and a chip C. As shown in this figure, the adhesive sheet 15p and the chip C1 are substantially the same size. This is the same for the adhesive sheet 15p and the chips C2, C3, and C4.

[0073] An example of a method for manufacturing a chip 25 with an adhesive sheet will be described. First, a protective film (also referred to as a BG tape) is attached to the circuit surface Wa of the wafer W. The wafer W is irradiated with a laser to form a plurality of planned cutting lines L (stealth dicing). Thereafter, if necessary, the wafer W is subjected to back grinding and polishing processes. Here, stealth dicing using a laser is exemplified, but instead of this, the wafer W may be half-cut with a blade. Half-cutting means forming a notch corresponding to the planned cutting line L of the wafer W, rather than cutting the wafer W. The wafer W may be single-crystalline silicon, or may be polycrystalline silicon, various ceramics, or a compound semiconductor such as gallium arsenide.

[0074] Next, as shown in FIG. 5(a), a film 20 is attached so that the adhesive layer 15 contacts the back surface Wb of the wafer W. Also, a dicing ring DR is attached to the peripheral edge 13a of the adhesive layer 13. Thereafter, the wafer W and the adhesive layer 15 are singulated by cooling expansion under a temperature condition of 0 to -15°C. That is, as shown in FIG. 5(b), tension is applied to the base film 11 by pushing up the inner region 11a of the dicing ring DR in the base film 11 with a ring Ra. Thereby, the wafer W is divided along the planned cutting line L, and accordingly, the adhesive layer 15 is divided into adhesive sheets 15p. A plurality of chips 25 with adhesive sheets are obtained on the surface of the adhesive layer 13. The chip 25 with an adhesive sheet is composed of a chip C and an adhesive sheet 15p.

[0075] By heating the inner region 11a of the dicing ring DR in the base film 11, the inner region 11a is contracted. FIG. 6(a) is a cross-sectional view schematically showing the state where the inner region 11a is heated by the blow of the heater H. By annularly contracting the inner region 11a to apply tension to the base film 11, the interval between adjacent chips 25 with adhesive pieces can be widened. Thereby, the occurrence of pickup errors can be further suppressed, and the visibility of the chips 25 with adhesive pieces in the pickup process can be improved.

[0076] Next, as shown in FIG. 6(b), the adhesive force of the adhesive layer 13 is reduced by irradiation with activation energy (for example, ultraviolet ray UV). The irradiation amount of the active energy ray to the adhesive layer 13 is, for example, 10~1000 mJ / cm 2 and may be 100~700 mJ / cm 2 or 200~500 mJ / cm 2 After that, as shown in FIG. 6(c), the chip 25 with an adhesive piece is peeled off from the adhesive layer 13 by pushing up the chip 25 with an adhesive piece with a push-up jig 42, and the chip 25 with an adhesive piece is sucked and picked up by a suction collet 44.

[0077] <Method for manufacturing semiconductor device> A method for manufacturing a semiconductor device 50 will be described. First, as shown in FIG. 7(a), the first-stage chip C1 is pressure-bonded onto the surface of the substrate 30. That is, the chip C1 is pressure-bonded to a predetermined position on the substrate 30 via the adhesive piece 15p of the chip 25 with an adhesive piece. This pressure-bonding process is preferably carried out under the conditions of, for example, 80~180°C and 0.01~0.50 MPa for 0.5~3.0 seconds. Next, the adhesive piece 15p is cured by heating. This curing process is preferably carried out under the conditions of, for example, 60~175°C and 0.01~1.0 MPa for 5 minutes or more. Thereby, the adhesive piece 15p is cured to become a cured product 15c. The curing process of the adhesive piece 15p may be carried out in a pressurized atmosphere from the viewpoint of reducing voids.

[0078] In the same manner as the installation of the chip C1 on the substrate 30, the second-stage chip C2 is installed on the surface of the chip C1. Further, by installing the third-stage and fourth-stage chips C3 and C4, the structure 40 shown in FIG. 7(b) is fabricated. After electrically connecting the chips C1, C2, C3, C4 and the substrate 30 with wires W1, W2, W3, W4, the semiconductor device 50 shown in FIG. 3 is completed by encapsulating the chips and the wires with the encapsulation layer 35.

[0079] As described above, the embodiments of the present disclosure have been described in detail, but the present invention is not limited to the above embodiments. For example, in the above embodiments, the case of singulating the wafer W by stealth dicing is exemplified, but the wafer W may be singulated using a blade.

Example

[0080] Hereinafter, the present disclosure will be described more specifically based on examples, but the present invention is not limited to these examples. Unless otherwise specified, all chemicals used were reagents.

[0081] (Examples 1 and 2 and Comparative Examples 1 and 2) <Preparation of Adhesive Varnish> Cyclohexanone was added to a mixture composed of components (A), (B), and (D) with the components and contents (unit: parts by mass) shown in Table 1, and stirred and mixed. To this, component (C) was added with the components and contents (unit: parts by mass) shown in Table 1, and stirred. Further, components (E) and (F) were added and stirred until each component became uniform to prepare an adhesive varnish. Note that each component shown in Table 1 means the following, and the numerical values shown in Table 1 mean parts by mass of the solid content.

[0082] (A) component: epoxy resin (A1) component: epoxy resin having a fluorene skeleton (A1-1) PG-100 (trade name, manufactured by Osaka Gas Chemical Co., Ltd., epoxy resin having a fluorene skeleton, epoxy equivalent: 260 g / eq) (A1-2) CG-500 (trade name, manufactured by Osaka Gas Chemical Co., Ltd., epoxy resin with a fluorene skeleton, epoxy equivalent: 310 g / eq) (A2) Component: Epoxy resin without a fluorene skeleton (A2-1) N-500P-10 (trade name, manufactured by DIC Corporation, o-cresol novolak type epoxy resin, epoxy equivalent: 204 g / eq) (A2-2) EXA-830CRP (trade name, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., bisphenol F type epoxy resin, epoxy equivalent: 159 g / eq)

[0083] (B) Component: Hardening agent (B-1) PSM-4326 (trade name, manufactured by Gunei Chemical Industry Co., Ltd., phenol novolak type phenol resin, hydroxyl equivalent: 105 g / eq, softening point: 118 - 122 °C) (B-2) GPH-103 (trade name, manufactured by Nippon Kayaku Co., Ltd., biphenyl aralkyl type phenol resin, hydroxyl equivalent: 220 - 240 g / eq, softening point: 99 - 106 °C) (B-3) MEH-7800M (trade name, manufactured by Meiwafosis Co., Ltd., phenol novolak type phenol resin, hydroxyl equivalent: 175 g / eq, softening point: 78 °C)

[0084] (C) Component: Elastomer (C-1) Methyl ethyl ketone solution of acrylic rubber (in the acrylic rubber of SG-P3 (trade name, manufactured by Nagase ChemteX Corporation), acrylic rubber with a part of the structural units of the acrylic rubber changed, weight average molecular weight: 800,000, Tg: 12 °C)

[0085] (D) Component: Inorganic filler (D-1) R972 (trade name, manufactured by Nippon Aerosil Co., Ltd., silica particles, average particle size: 0.016 μm) (D-2) SC2050-HLG (trade name, manufactured by Admatechs Co., Ltd., silica filler dispersion, average particle size: 0.50 μm) (D-3) Prototype silica filler (prototype, manufactured by Admatechs Co., Ltd., silica filler dispersion, average particle size: 0.2 μm)

[0086] (E) Component: Coupling agent (E-1) Y-9669 (trade name, manufactured by Momentive Performance Materials Japan, 3-phenylaminopropyltrimethoxysilane) (E-2) A-189 (trade name, manufactured by Nippon Unicar Co., Ltd., γ-mercaptopropyltrimethoxysilane) (E-3) Z-6119 (trade name, manufactured by Toray Dow Corning Co., Ltd., ureidopropyltriethoxysilane)

[0087] (F) Component: Curing accelerator (F-1) 2PZ-CN (trade name, manufactured by Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole)

[0088]

Table 1

[0089] <Production of Adhesive Film> The prepared adhesive varnish was filtered through a 100-mesh filter and degassed under vacuum. As a support film, a polyethylene terephthalate (PET) film with a thickness of 38 μm and subjected to a release treatment was prepared, and the adhesive varnish after degassing under vacuum was applied onto the PET film. The applied adhesive varnish was dried by heating in two steps at 90 °C for 5 minutes and then at 130 °C for 5 minutes to obtain the adhesive films (thickness: 10 μm) of Examples 1 and 2 and Comparative Examples 1 and 2 in the B-stage state.

[0090] <Production of Dicing Film> [Synthesis of Acrylic Copolymer] Using the following components as raw materials and ethyl acetate as the solvent, a copolymer was obtained by solution radical polymerization. · 2-Ethylhexyl acrylate: 78 parts by mass · 2-Hydroxyethyl acrylate: 20 parts by mass · Methacrylic acid: 2 parts by mass To this acrylic copolymer, 8 parts by mass of 2-methacryloyloxyethyl isocyanate was reacted to synthesize a radiation-reactive acrylic copolymer having a carbon-carbon double bond. In the above reaction, 0.05 parts by mass of hydroquinone monomethyl ether was used as a polymerization inhibitor. When the weight-average molecular weight of the synthesized acrylic copolymer was measured by GPC, it was 800,000.

[0091] The acrylic copolymer thus obtained, 8.0 parts by mass of a polyisocyanate compound (manufactured by Nippon Polyurethane Industry Co., Ltd., trade name: Coronate L) as a curing agent in terms of solid content, and 0.5 parts by mass of 1-hydroxycyclohexyl phenyl ketone as a photopolymerization initiator were mixed to prepare a radiation-curable adhesive solution. Next, the radiation-curable adhesive solution obtained as described above was applied and dried on a polyethylene terephthalate release film (thickness: 38 μm) so that the thickness after drying was 10 μm. Thereafter, an ionomer resin film (Hymilan 1855, thickness 90 μm) in which the intermolecular space of an ethylene-methacrylic acid copolymer subjected to corona discharge treatment on one side was crosslinked with metal ions was laminated on the adhesive layer. The laminated sample was aged in a constant temperature bath at 40 °C for 72 hours to produce a dicing film.

[0092] <Production of Dicing and Die Bonding Integrated Film> By laminating the adhesive films according to the examples and comparative examples on the adhesive layer of the dicing film obtained as described above, dicing and die bonding integrated films according to the examples and comparative examples were obtained.

[0093] [Tack Test] Samples for conducting the tack test were prepared by the following procedure. (1) By irradiating ultraviolet rays from the dicing film side of the dicing and die bonding integrated film, the adhesive strength of the dicing film was reduced. The ultraviolet irradiation conditions were as follows. · Intensity of ultraviolet rays: 100 mW / cm 2 · UV irradiation dose: 150 mJ / cm 2 (2) A dicing and die-bonding integrated film was laminated on the polyimide film so that the adhesive film was in contact with the surface of the polyimide film. The following polyimide film was used. The lamination conditions were as follows. (Polyimide film) · Kapton 500H (trade name, manufactured by Toray DuPont Co., Ltd.) · Thickness: 125 μm · Tensile modulus: 3.35 GPa · Heat-resistant temperature: 270 °C (Lamination conditions) · Temperature: 65 °C · Speed: 5 mm / sec (3) After lamination, the laminate was left at room temperature for 1 day to enhance the adhesion between the polyimide film and the adhesive film. (4) The laminate was cut into a size of 40 mm in length × 40 mm in width, and the dicing film was peeled off. As a result, a plurality of samples were obtained for each of the examples and comparative examples.

[0094] With the adhesive film on the upper surface, the sample was set on the stage of a tacking tester (TAC1000 (trade name), manufactured by Reska Corporation). The tack test was carried out on the adhesive films according to the examples and comparative examples under the following conditions. · Stage temperature: 25 °C · Probe temperature: 100 °C or 120 °C · Probe penetration speed: 1.0 mm / sec · Pressing force: 0.1 MPa · Pressing time: 1.0 sec · Probe pulling speed: 1.0 mm / sec · Probe tip surface: circular with a diameter of 5 mm · Probe material: SUS304

[0095] For each of the examples and comparative examples, nine measurements were carried out, and the average value of seven measured values excluding the maximum and minimum values was taken as the tack (N / 5 mmφ). The results are shown in Table 2.

[0096]

Table 2

[0097] As shown in Table 2, the adhesive films according to Examples 1 and 2 both satisfy Conditions 1 and 2 and are judged to be good. The adhesive film according to Comparative Example 1 does not satisfy both Conditions 1 and 2. The adhesive film according to Comparative Example 2 satisfies Condition 1 but does not satisfy Condition 2.

[0098] [Reproduction of peeling in the manufacturing process of semiconductor devices] In order to reproduce the peeling in the manufacturing process of semiconductor devices, a dicing / die bonding integrated film according to Example 1 was used, and through the processes shown in FIGS. 5 and 6, an adhesive chip having the configuration shown in FIG. 4 was produced. The size of the chip was as follows. · Thickness: 36 μm · Length: 6 mm · Width: 12 mm

[0099] Eight adhesive chips were used to produce a structure having the configuration shown in FIG. 9. The structure 90 in FIG. 9 is composed of a substrate 30, a silicon spacer 32, and eight adhesive chips S1 to S8. The crimping conditions of the adhesive chips were as follows, and two structures were produced. · 120°C / 15 N / 1 second · 120°C / 7.5 N / 1 second

[0100] Except for using the dicing / die bonding integrated films according to Example 2 and Comparative Examples 1 and 2, structures according to Example 2 and Comparative Examples 1 and 2 were produced in the same manner as above. For the structures according to the examples and comparative examples, in order to evaluate the adhesive strength of the first-stage adhesive chip S1 with respect to the surface of the silicon spacer, the separation distance D shown in FIG. 9 was measured. The results are shown in Table 3.

[0101]

Table 3

[0102] In the structures according to Examples 1 and 2, despite the thickness of the adhesive layer being 10 μm, the separation distance D was 30 μm or less, and peeling was suppressed. In contrast, in the structures according to Comparative Examples 1 and 2, the separation distance D exceeded 30 μm, and peeling could not be sufficiently suppressed with an adhesive layer having a thickness of 10 μm. The evaluation results shown in Table 2 are consistent with the results shown in Table 3.

Explanation of Reference Numerals

[0103] 1... stage, 2... probe, 3... pressing jig, 5... polyimide film (resin film), 10... apparatus for performing tack test, 11... base film, 13... adhesive layer, 15... adhesive layer, 15c... cured product of adhesive piece, 15p... adhesive piece, 20... dicing / die bonding integrated film, 25... chip with adhesive piece, 30... substrate, 35... sealing layer, 40... structure, 50... semiconductor device, C, C1, C2, C3, C4... chips, S... sample, W... wafer.

Claims

1. A method for evaluating an adhesive film used in a semiconductor device manufacturing process, including a step of performing a tack test with a heated probe, wherein the thickness of the adhesive film to be evaluated is 20 μm or less, and when the adhesive film satisfies both of the following Conditions 1 and 2, the adhesive film is determined to be good: A method for evaluating an adhesive film. (Condition 1) In the tack test with the probe temperature set to 100°C, the tack is 2.5 N / 5 mmφ or more. (Condition 2) In the tack test with the probe temperature set to 120°C, the tack is 2.5 N / 5 mmφ or more.

2. Using an apparatus including a stage for supporting a sample of the adhesive film and a probe that is movable in the vertical direction with respect to the stage and has a temperature setting function, The method for evaluating an adhesive film according to claim 1, wherein the tack test is performed with a resin film interposed between the stage and the sample.

3. A step of preparing a laminated film including an adhesive film having a thickness of 20 μm or less, a step of attaching the laminated film to the wafer so that the adhesive film contacts the surface of the wafer, a step of producing an adhesive-attached chip by singulating the wafer and the adhesive film, a step of bonding the adhesive-attached chip to the surface of a substrate or another chip, including, wherein the adhesive film is an adhesive film determined to be good in the evaluation method according to claim 1 or 2, and the adhesive film contains (A) a thermosetting resin, (B) a curing agent, and (C) an elastomer having a glass transition temperature of 5 to 55°C: A method for manufacturing a semiconductor device.

4. An adhesive film used in a semiconductor device manufacturing process, having a thickness of 20 μm or less, determined to be good in the evaluation method according to claim 1 or 2, and the adhesive film contains (A) a thermosetting resin, (B) a curing agent, and (C) an elastomer having a glass transition temperature of 5 to 55°C: An adhesive film.

5. A base film, an adhesive layer having a thickness of 20 μm or less, a pressure-sensitive adhesive layer, provided in this order, wherein the adhesive layer is composed of an adhesive film determined to be good in the evaluation method according to claim 1 or 2, and the adhesive film contains (A) a thermosetting resin, (B) a curing agent, and (C) an elastomer having a glass transition temperature of 5 to 55°C: A dicing / die bonding integrated film.

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