Substrate support unit and processing apparatus

Abstract

To provide a substrate support and a processing device that improves the uniformity of temperature distribution in an electrostatic chuck.SOLUTION: In a plasma processing device, a substrate support disposed within a plasma processing chamber and having a substrate support surface for supporting a substrate includes an electrostatic chuck 113 for placing an object to be processed, a base 116 having an electrostatic chuck mounting surface and supporting the electrostatic chuck on the electrostatic chuck mounting surface, a first adhesive layer by an adhesive 117 disposed between the electrostatic chuck and the base, and a first filling layer by a filler 118 disposed around the first adhesive layer between the electrostatic chuck and the base. The first filling layer has different thermal conductivities in the circumferential direction of the base.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present disclosure relates to a substrate support portion and a processing apparatus.

Background Art

[0002] For example, Patent Document 1 discloses a technique for suppressing a decrease in the uniformity of the temperature distribution of an electrostatic chuck by applying a paste-like adhesive to a concave portion of a base and alleviating unevenness and undulation.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of improving the uniformity of the temperature distribution of an electrostatic chuck.

Means for Solving the Problems

[0005] According to one aspect of the present disclosure, there is provided a substrate support portion including: an electrostatic chuck on which a workpiece is placed; a base having a placement surface of the electrostatic chuck and supporting the electrostatic chuck on the placement surface of the electrostatic chuck; a first adhesive layer disposed between the electrostatic chuck and the base; and a first filling layer disposed around the first adhesive layer between the electrostatic chuck and the base, wherein the first filling layer has different thermal conductivities in the circumferential direction of the base.

Effects of the Invention

[0006] According to one aspect, the uniformity of the temperature distribution of the electrostatic chuck can be improved.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Mode for Carrying Out the Invention

[0008] Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. In each drawing, the same reference numerals are given to the same components, and redundant descriptions may be omitted.

[0009] [Substrate Processing System] In one embodiment, the plasma processing system shown in FIG. 1 includes a plasma processing apparatus 1 and a control unit 2. The plasma processing apparatus 1 is an example of a processing apparatus according to one embodiment. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support part 11, and a plasma generation part 12. The plasma processing chamber 10 has a plasma processing space. Further, the plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas discharge port for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply part 20 described later, and the gas discharge port is connected to an exhaust system 40 described later. The substrate support part 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR plasma (Electron-Cyclotron-resonance plasma), helicon wave plasma (HWP), surface wave plasma (SWP), or the like. Also, various types of plasma generation units including an AC (Alternating Current) plasma generation unit and a DC (Direct Current) plasma generation unit may be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency within the range of 100 kHz to 10 GHz. Accordingly, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency within the range of 200 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to execute various processes described in the present disclosure. The control unit 2 can be configured to control each element of the plasma processing apparatus 1 to execute the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include, for example, a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 can be configured to perform various control operations based on programs and recipes stored in the storage unit 2a2. The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0012] Next, a configuration example of a capacitively coupled plasma processing apparatus 1 as an example of the processing apparatus 1 will be described with reference to FIG. 2. The plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a showerhead 13. The substrate support unit 11 is disposed inside the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support unit 11. In one embodiment, the showerhead 13 constitutes at least a part of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, the side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The side wall 10a is grounded. The showerhead 13 and the substrate support unit 11 are electrically insulated from the plasma processing chamber 10 housing.

[0013] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. In one embodiment, the main body portion 111 includes a base 116 and an electrostatic chuck 113. The base 116 includes a conductive member. The base 116 is formed of aluminum or titanium. The conductive member of the base 116 functions as a lower electrode. The electrostatic chuck 113 is disposed on the base 116. The electrostatic chuck 113 is formed of ceramics. The main body portion 111 has a central region (substrate support surface) 111a for supporting a substrate (wafer) W, which is an example of a workpiece, and an annular region (mounting surface 111b of the ring assembly 112) for supporting the ring assembly 112. The upper surface of the electrostatic chuck 113 is the substrate support surface 111a, and the substrate W is placed on the substrate support surface 111a. By applying a DC voltage to a chuck electrode 113b embedded in the electrostatic chuck 113, the substrate W is adsorbed and held on the substrate support surface 111a. The central region of the base 116 is the mounting surface 111c of the electrostatic chuck 113, and the outer peripheral region of the base 116 surrounding the mounting surface 111c is the mounting surface 111b of the ring assembly 112. The mounting surface 111b of the ring assembly 112 (the annular region 111b of the main body portion 111) surrounds the central region 111a of the main body portion 111 (the mounting surface 111c of the electrostatic chuck 113) in plan view. The substrate W is disposed on the central region 111a of the main body portion 111, and the ring assembly 112 is disposed on the annular region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. The ring assembly 112 includes one or more annular members. At least one of the one or more annular members is an edge ring. Also, although not shown, the substrate support portion 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck 113, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path, or a combination thereof. In the present disclosure, the base 116 has a flow path 115 inside, and a heat transfer fluid such as brine or gas flows through the flow path 115. Further, the substrate support portion 11 includes a heat transfer gas supply portion configured to supply a heat transfer gas between the back surface of the substrate W and the substrate support surface 111a. The heat transfer gas supply portion has a heat transfer gas source 119 and a heat transfer gas line 119a.The base 116 has a through hole 114, and the through hole 114 provided in the base 116 communicates with a through hole 113c that penetrates the electrostatic chuck 113. The heat transfer gas output from the heat transfer gas source 119 is supplied to the back surface of the substrate W through the heat transfer gas line 119a, the through hole 114, and the through hole 113c.

[0014] The shower head 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c. Further, the shower head 13 includes a conductive member. The conductive member of the shower head 13 functions as an upper electrode. Note that the gas introduction unit may include, in addition to the shower head 13, one or more side gas injectors (SGI) attached to one or more openings formed in the side wall 10a.

[0015] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from the corresponding gas source 21 to the shower head 13 through the corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Further, the gas supply unit 20 may include at least one flow modulation device that modulates or pulsates the flow rate of at least one process gas.

[0016] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power), such as a source RF signal and a bias RF signal, to the conductive member of the substrate support 11 and / or the conductive member of the shower head 13. Thereby, plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Accordingly, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Also, by supplying a bias RF signal to the conductive member of the substrate support 11, a bias potential is generated on the substrate W, and the ion component in the formed plasma can be drawn into the substrate W.

[0017] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to the conductive member of the substrate support unit 11 and / or the conductive member of the shower head 13 via at least one impedance matching circuit, and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency within the range of 13 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to the conductive member of the substrate support unit 11 and / or the conductive member of the shower head 13. The second RF generation unit 31b is coupled to the conductive member of the substrate support unit 11 via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency within the range of 400 kHz to 13.56 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to the conductive member of the substrate support unit 11. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0018] In addition, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generation unit 32a and a second DC generation unit 32b. In one embodiment, the first DC generation unit 32a is connected to the conductive member of the substrate support 11 and configured to generate a first DC signal. The generated first DC signal is applied to the conductive member of the substrate support 11. In one embodiment, the first DC signal may be applied to other electrodes such as the electrodes within the electrostatic chuck. In one embodiment, the second DC generation unit 32b is connected to the conductive member of the shower head 13 and configured to generate a second DC signal. The generated second DC signal is applied to the conductive member of the shower head 13. In various embodiments, the first and second DC signals may be pulsed. Note that the first and second DC generation units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generation unit 32a may be provided in place of the second RF generation unit 31b.

[0019] The exhaust system 40 can be connected to, for example, the gas outlet 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbo molecular pump, a dry pump, or a combination thereof.

[0020] [Temperature Distribution of Electrostatic Chuck] Next, the temperature distribution of the electrostatic chuck 113 will be described with reference to FIGS. 3 and 4. FIG. 3 is a diagram showing the adhesion between the electrostatic chuck 113 and the base 116 below the central region (substrate support surface) 111a of the main body 111 according to the embodiment. FIG. 4 is a cross-sectional view taken along line A-A of FIG. 3.

[0021] Referring to FIG. 3, an adhesive 117 and a filler 118 are disposed between the electrostatic chuck 113 and the base 116. The electrostatic chuck 113 and the base 116 are adhered by the adhesive 117 and the filler 118. The adhesive 117 is an example of a first adhesive layer disposed between the electrostatic chuck 113 and the base 116. The filler 118 is an example of a first filler layer disposed around the adhesive 117 between the electrostatic chuck 113 and the base 116. The filler 118 has an adhesive function, but may not have an adhesive function.

[0022] The periphery of the adhesive 117 is the outermost peripheral region of the electrostatic chuck 113, and the filler 118 is disposed in the outermost peripheral region. Referring to FIG. 4 which is a cross-section taken along line A-A of FIG. 3, the filler 118 covers the adhesive 117 over the entire circumference of the outermost peripheral region of the electrostatic chuck 113.

[0023] In the manufacture of the substrate support portion 11, the substrate support portion 11 is designed based on the simulation results so that the temperature distribution of the electrostatic chuck 113 becomes uniform, and the substrate support portion 11 is manufactured according to such design. However, in the actually manufactured substrate support portion 11, the temperature distribution of the electrostatic chuck 113 may not become uniform.

[0024] Currently, since there is no method to change the structure after the manufacture of the substrate support portion 11 to make the temperature distribution of the electrostatic chuck 113 uniform, if the non-uniformity of the temperature distribution of the electrostatic chuck 113 exceeds the allowable range, redesign and remanufacture of the substrate support portion 11 are required. Therefore, a method for making the temperature distribution of the electrostatic chuck 113 uniform during and after the manufacture of the substrate support portion 11 is desired.

[0025] Therefore, in the present disclosure, a substrate support portion 11 capable of improving the uniformity of the temperature distribution of the electrostatic chuck 113 during and after the manufacture of the substrate support portion 11 is provided. For this purpose, in the electrostatic chuck 113 of the present disclosure, a filler 118 is provided around the adhesive 117. Since the filler 118 has plasma resistance, it is disposed around the entire circumference of the adhesive 117 so that the adhesive 117 is not exposed to plasma.

[0026] The adhesive 117 and the filler 118 have thermal conductivity. Therefore, when the filler 118 is not arranged around the adhesive 117, the outermost peripheral region of the electrostatic chuck 113 where the adhesive 117 is not arranged around the adhesive 117 becomes high temperature. On the other hand, when the adhesive 117 is arranged up to the outermost peripheral region of the electrostatic chuck 113, the adhesive 117 is exposed to the plasma and consumed. For this reason, the filler 118 is arranged all around the adhesive 117. Thereby, while suppressing the consumption of the adhesive 117 by the plasma by the filler 118, it is possible to prevent the outermost peripheral region of the electrostatic chuck 113 from becoming high temperature around the adhesive 117 and the temperature distribution of the electrostatic chuck 113 from becoming non-uniform.

[0027] In addition, the filler 118 has different thermal conductivities in the circumferential direction of the base 116. For example, when the thermal conductivity of the filler 118 is lowered, it becomes difficult for heat to be transferred from the electrostatic chuck 113 of the ceramic plate to the base 116 of the conductive material, and the temperature of the electrostatic chuck 113 above the filler 118 rises. Conversely, when the thermal conductivity of the filler 118 is increased, heat is easily transferred from the electrostatic chuck 113 to the base 116, and the temperature of the electrostatic chuck 113 above the filler 118 drops. Therefore, by arranging the filler 118 having a high thermal conductivity under the portion where it is desired to lower the temperature of the electrostatic chuck 113, the temperature of the electrostatic chuck 113 in that portion can be actively lowered. Conversely, by arranging the filler 118 having a low thermal conductivity under the portion where it is desired to raise the temperature of the electrostatic chuck 113, the temperature of the electrostatic chuck 113 in that portion can be actively raised. By arranging the filler 118 having different thermal conductivities in the circumferential direction of the base 116 in this way in the outermost peripheral region of the electrostatic chuck 113, the uniformity of the temperature distribution of the electrostatic chuck 113 can be enhanced.

[0028] A temperature singularity occurs in the electrostatic chuck 113. For example, the vicinity of the through hole 113c provided in the electrostatic chuck 113 has poor heat transfer and is likely to become a temperature singularity. Therefore, a filler 118 with a high thermal conductivity is disposed in the vicinity of the through hole 113c. This increases the heat conduction in the vicinity of the through hole 113c and suppresses the through hole 113c from becoming a temperature singularity in the electrostatic chuck 113.

[0029] Also, when a coolant such as brine flows through the flow path 115 of the base 116, the vicinity of the flow path 115 is likely to be cooled and is likely to become a temperature singularity. Therefore, a filler 118 with a low thermal conductivity is disposed in the vicinity of the flow path 115. This reduces the heat conduction in the vicinity of the flow path 115 and suppresses the flow path 115 from becoming a temperature singularity in the electrostatic chuck 113.

[0030] Similarly, for the heater (see the heater (heating element) 113a in FIG. 5) disposed in the electrostatic chuck 113, the portion where the heater is disposed is likely to become a temperature singularity of the electrostatic chuck 113. For this reason, a filler 118 with a high thermal conductivity is disposed in the vicinity of the heater. This increases the heat conduction in the vicinity of the heater and suppresses the heater from becoming a temperature singularity in the electrostatic chuck 113. Note that the structures that become singularities are not limited to this, and examples include through holes of lifter pins provided in the electrostatic chuck 113 and / or the base 111, and other convex portions and concave portions.

[0031] FIG. 4 is a cross section taken along line A-A of FIG. 3 and shows an example of the arrangement of fillers 118 having different thermal conductivities in the circumferential direction of the base 116. In the example of FIG. 4, fillers 118a and 118b having different thermal conductivities in the circumferential direction of the base 116 are shown. However, the arrangement of the fillers 118a and 118b is merely an example and is not limited thereto. Also, the values of the thermal conductivities of the fillers 118 are not limited to two, and may be a plurality of combinations.

[0032] As shown in FIG. 4, a filler 118b having a higher thermal conductivity than that of the filler 118a is disposed near the through hole 113c where heat transfer is likely to be poor. Thereby, the heat conduction in the vicinity of the through hole 113c is increased to suppress the through hole 113c from becoming a temperature singularity. There are also locations other than the through hole 113c that become temperature singularities. Although the illustration of the structure of other singularities is omitted in FIG. 4, from the above, according to the through hole 113c and other temperature singularities, the arrangement and range of the filler 118a with low thermal conductivity and the filler 118b with high thermal conductivity are determined.

[0033] In the example of FIG. 4, the thermal conductivity of the filler 118 is shown in two types, the thermal conductivity of the filler 118a and the thermal conductivity of the filler 118b, but it is not limited to this. By disposing fillers 118 with various thermal conductivities with respect to the unevenness, hole structure and shape, and other configurations of the electrostatic chuck 113, the uniformity of the temperature distribution of the electrostatic chuck 113 can be further enhanced. For example, the fillers 118 may have different thermal conductivities at a plurality of locations in the circumferential direction of the base 116. Further, the fillers 118 may gradually (in a gradient shape) have different thermal conductivities in the circumferential direction of the base 116. Further, the fillers 118 may have a multilayer structure in the height direction made of different thermal conductivity materials. Further, the fillers 118 may have a multilayer structure in the radial direction of the base 116 made of different thermal conductivity materials.

[0034] For example, as shown in FIG. 5, the electrostatic chuck 113 may have a heating element 113a inside. The heating element 113a may be a heater or a Peltier element. The heating element 113a is one of the parts that affect the temperature distribution of the electrostatic chuck 113. Therefore, it is preferable to dispose fillers 118 with different thermal conductivities so that the uniformity of the temperature distribution can be obtained from the structure of the electrostatic chuck 113 including the heating element 113a. However, the through hole 113c and the heating element 113a are examples of the structure and parts of the electrostatic chuck 113, and the thermal conductivity of the filler 118 is determined in consideration of other structures and components that affect the temperature distribution of the electrostatic chuck 113.

[0035] In addition, it is also possible to measure the temperature distribution on the surface of the manufactured electrostatic chuck 113, accumulate the measurement results to form big data, and arrange the filler 118 with an optimal thermal conductivity by machine learning. The temperature distribution on the surface of the manufactured electrostatic chuck 113 can be measured, the filler 118 can be removed, and the filler 118 with an optimal thermal conductivity can be refilled (re-potting) according to the measurement results. As a result, when a non-permissible temperature distribution non-uniformity occurs in the electrostatic chuck 113, without remanufacturing the electrostatic chuck 113, only the filler 118 can be removed and refilled with a filler 118 having an appropriate thermal conductivity to eliminate the non-uniformity of the temperature distribution. Thereby, the electrostatic chuck 113 can be reused. Also, similarly, with respect to the change in the temperature distribution corresponding to the deterioration of the electrostatic chuck 113 according to the usage conditions of the electrostatic chuck 113, the non-uniformity of the temperature distribution can be corrected by refilling the filler 118.

[0036] The filler 118 has a predetermined thermal conductivity and has plasma resistance that the adhesive 117 does not have. From the above, in the substrate support portion 11 of the present disclosure, the adhesive 117 and the filler 118 are separated, and the filler 118 is arranged around the adhesive 117 over the entire circumference.

[0037] The adhesive 117 is formed of, for example, an epoxy resin or a silicone resin. The filler 118 is a mixture of the adhesive 117 and alumina ceramics (Al 2 O 3 ) at a desired blending ratio, and the thermal conductivity is determined by the blending ratio. That is, the filler 118 can have different thermal conductivities depending on the blending ratio of the adhesive 117 and alumina ceramics. Thereby, fillers 118 with different thermal conductivities can be arranged at specific positions. For example, the filler 118 may use a mixture of the adhesive 117 and alumina ceramics at a ratio of 10:90. That is, the thermal conductivity of the filler 118 is determined by the content of alumina ceramics with respect to the adhesive 117. That is, the filler 118 can change the thermal conductivity by changing the blending ratio of the adhesive 117 and alumina ceramics.

[0038] [Edge Ring] Next, the uniformity of the temperature distribution of the edge ring 112a when the ring assembly 112 includes the edge ring 112a will be described with reference to FIG. 5. FIG. 5 is a schematic cross-sectional view showing an example of the substrate support portion 11 and the edge ring 112a according to the embodiment.

[0039] As shown in FIG. 5, the base 116 has a mounting surface 111b for the edge ring 112a disposed around the substrate W, and supports the edge ring 112a on the mounting surface 111b. An adhesive 211 is disposed between the edge ring 112a and the base 116. The adhesive 211 is an example of a second adhesive layer disposed between the edge ring 112a and the base 116.

[0040] Also, a filler 212 is disposed around the adhesive 211 between the edge ring and the base 116. The filler 212 is an example of a second filler layer disposed around the adhesive 211 between the edge ring 112a and the base 116.

[0041] The periphery of the adhesive 211 includes the outermost peripheral region and the innermost peripheral region of the edge ring 112a. The filler 212 covers the adhesive 211 over the entire circumference of the outermost peripheral region and the innermost peripheral region of the edge ring 112a. The filler 212 has different thermal conductivities in the circumferential direction of the base 116. Thereby, the uniformity of the temperature distribution of the edge ring 112a can be improved.

[0042] The adhesive 211 is formed of an epoxy resin or a silicone resin, similar to the adhesive 117. Also, the filler 212 is a mixture of the adhesive 211 and alumina ceramics at a desired mixing ratio, similar to the filler 118, and the thermal conductivity is determined by the mixing ratio. That is, the thermal conductivity of the filler 212 can be varied depending on the mixing ratio of the adhesive 211 and alumina ceramics. Thereby, fillers 212 having different thermal conductivities can be arranged over the entire circumference of the outermost peripheral region and the innermost peripheral region of the edge ring 112a. As a result, the uniformity of the temperature distribution of the edge ring 112a can be achieved. For example, the filler 212 may have different thermal conductivities at a plurality of locations in the circumferential direction of the base 116. Also, the filler 212 may gradually (in a graded manner) have different thermal conductivities in the circumferential direction of the base 116. Also, the filler 212 may have a multilayer structure in the height direction with different thermal conductivity materials. Also, the filler 212 may have a multilayer structure in the radial direction of the base 116 with different thermal conductivity materials.

[0043] By applying a DC voltage to the edge ring electrode 210 embedded inside the edge ring 112a, the edge ring 112a can be electrostatically adsorbed to the base 116.

[0044] As described above, according to the substrate support portion and the processing apparatus of the embodiment, the uniformity of the temperature distribution of the electrostatic chuck 113 can be improved. Also, the uniformity of the temperature distribution of the edge ring 112a (ring assembly 112) can be improved. Furthermore, by arranging a filler around the adhesive, deterioration and consumption of the adhesive can be suppressed, and an O-ring with plasma resistance, which was previously arranged around the adhesive to protect the adhesive from plasma, can be made unnecessary.

[0045] In the example of FIG. 5, the substrate support portion 11 in which the edge ring 112a and the electrostatic chuck 113 are integrally formed has been described as an example. However, the present invention is not limited to this, and it can also be applied to a substrate support portion 11 in which the base 116 is separated between the edge ring 112a and the electrostatic chuck 113, and the edge ring 112a and the electrostatic chuck 113 are formed separately.

[0046] The substrate support part and the processing apparatus according to the embodiments disclosed this time should be considered as illustrative in all respects and not restrictive. The embodiments can be modified and improved in various forms without departing from the scope and gist of the appended claims. The matters described in the above-described multiple embodiments can also adopt other configurations within a non-contradictory range and can be combined within a non-contradictory range.

[0047] The processing apparatus of the present disclosure is applicable to any type of apparatus such as an Atomic Layer Deposition (ALD) apparatus, a Capacitively Coupled Plasma (CCP), an Inductively Coupled Plasma (ICP), a Radial Line Slot Antenna (RLSA), an Electron Cyclotron Resonance Plasma (ECR), and a Helicon Wave Plasma (HWP).

[0048] In addition, although a plasma processing apparatus has been described as an example of the processing apparatus, the processing apparatus may be any apparatus that performs a predetermined process (for example, a film formation process, an etching process, etc.) on a workpiece to be processed, and is not limited to a plasma processing apparatus.

Explanation of Reference Numerals

[0049] 1 Plasma processing apparatus 2 Control unit 2a Computer 2a1 Processing unit 2a2 Storage unit 2a3 Communication interface 10 Plasma processing chamber 11 Substrate support part 13 Shower head 21 Gas source 20 Gas supply unit 30 Power supply 31 RF power supply 31a First RF generation unit 31b Second RF generation unit 32a First DC generation unit 32b Second DC generation unit 40 Exhaust system 111 Main body part 112 Ring assembly 112a Edge ring 113 Electrostatic chuck 113a Heating element 115 Flow path 116 Base 117, 211 Adhesive 118, 212 Filler

Claims

1. An electrostatic chuck on which a workpiece is placed, a base having a placement surface of the electrostatic chuck and supporting the electrostatic chuck on the placement surface of the electrostatic chuck, a first adhesive layer disposed between the electrostatic chuck and the base, a first filling layer disposed around the first adhesive layer between the electrostatic chuck and the base, and having: the first filling layer having different thermal conductivities in a gradient shape in the circumferential direction of the base, a substrate support.

2. The periphery of the first adhesive layer is the outermost peripheral region of the electrostatic chuck, The substrate support according to claim 1.

3. The electrostatic chuck has a heating element inside, The substrate support according to claim 1 or 2.

4. The base has a flow path inside, The substrate support according to any one of claims 1 to 3.

5. The first filling layer has different thermal conductivities at a plurality of locations in the circumferential direction of the base, The substrate support according to any one of claims 1 to 4.

6. The first filling layer has a multilayer structure in the height direction made of materials with different thermal conductivities, The substrate support according to any one of claims 1 to 5.

7. The first filling layer has a multilayer structure in the radial direction of the base made of materials with different thermal conductivities, The substrate support according to any one of claims 1 to 6.

8. The first filling layer covers the first adhesive layer over the entire circumference of the outermost peripheral region of the electrostatic chuck, The substrate support according to any one of claims 1 to 7.

9. The base has a placement surface of an edge ring disposed around the workpiece, and supports the edge ring on the placement surface of the edge ring, further comprising an edge ring, a second adhesive layer disposed between the edge ring and the base, a second filling layer disposed around the second adhesive layer between the edge ring and the base, and having: the second filling layer having different thermal conductivities in the circumferential direction of the base, The substrate support according to any one of claims 1 to 8.

10. The periphery of the second adhesive layer includes the outermost peripheral region and the innermost peripheral region of the edge ring, The substrate support according to claim 9.

11. The second filling layer has different thermal conductivities at a plurality of locations in the circumferential direction of the base, The substrate support according to claim 9 or 10.

12. The second filling layer has different thermal conductivities in a gradient shape in the circumferential direction of the base, The substrate support according to any one of claims 9 to 11.

13. The second filling layer has a multilayer structure in the height direction made of materials with different thermal conductivities. The substrate support portion according to any one of claims 9 to 12.

14. The second filling layer has a multilayer structure in the radial direction of the base made of materials with different thermal conductivities. The substrate support portion according to any one of claims 9 to 13.

15. The second filling layer covers the second adhesive layer over the entire circumference of the outermost peripheral region and the innermost peripheral region of the edge ring. The substrate support portion according to any one of claims 9 to 14.

16. The adhesive layer composed of the first adhesive layer and / or the second adhesive layer is formed of an epoxy resin or a silicone resin. The substrate support portion according to any one of claims 9 to 15.

17. The filling layer composed of the first filling layer and / or the second filling layer has a thermal conductivity obtained by blending the adhesive layer and alumina ceramics at a desired blending ratio. The substrate support portion according to claim 16.

18. The filling layer changes its thermal conductivity by changing the blending ratio. The substrate support portion according to claim 17.

19. A processing apparatus having a processing chamber in which a workpiece is processed and a substrate support portion disposed in the processing chamber, wherein the substrate support portion has an electrostatic chuck on which the workpiece is placed, has a mounting surface of the electrostatic chuck and a base that supports the electrostatic chuck on the mounting surface of the electrostatic chuck, has a first adhesive layer disposed between the electrostatic chuck and the base, and has a first filling layer disposed around the first adhesive layer between the electrostatic chuck and the base, wherein the first filling layer has different thermal conductivities in a gradient shape in the circumferential direction of the base. Processing apparatus.

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