Semiconductor light-emitting device, method for manufacturing semiconductor light-emitting device, and sterilization device

Abstract

To provide a semiconductor light-emitting device which does not invite increase of production cost, prevents an alloy contained in a junction disposed between a light-emitting element and a substrate from being molten even if high heat is applied to the junction, and prevents occurrence of short-circuiting of the light-emitting element or a new defect.SOLUTION: A semiconductor light-emitting device comprises: a semiconductor light-emitting element; a base substrate; an eutectic part disposed between the semiconductor light-emitting element and the substrate; a frame erected from an edge of the base substrate and enclosing the semiconductor light-emitting element; a lid covering an opening of the frame; and a junction joining the frame and the lid. The eutectic part includes an alloy containing a first metal and a second metal, and a melt point of the alloy rises as a composition ratio of the first metal increases. A plurality of locations where the composition ratio of the first metal is higher than the surroundings are included in the eutectic part, and a melt point of the eutectic part is higher than a melt point of the junction.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a semiconductor light-emitting device, a method for manufacturing a semiconductor light-emitting device, and a sterilization device.

Background Art

[0002] Conventionally, semiconductor light-emitting elements such as LEDs (Light Emitting Diodes) have been used as light sources for various light-emitting devices (for example, lighting devices and sterilization devices). Further, due to recent technological developments, not only visible light-emitting LEDs (visible light LEDs) but also LEDs having peak wavelengths of light emission in the deep ultraviolet region (for example, the ultraviolet region with wavelengths from 100 nm to 280 nm) and the near ultraviolet region (for example, the ultraviolet region with wavelengths from 280 nm to 400 nm) (sometimes referred to as deep ultraviolet LEDs and near ultraviolet LEDs) are also provided.

[0003] As an example of deep ultraviolet LEDs and near ultraviolet LEDs, a light-emitting element including an AlGaN-based semiconductor can be mentioned. Such a light-emitting element is grown on an aluminum nitride (AlN) single crystal substrate and includes the AlN single crystal substrate even when formed into an element. This AlN single crystal substrate is hydrolyzed by moisture from the outside, which causes element degradation. To prevent such a situation, a light-emitting element including an AlN single crystal substrate is housed in a package filled with an inert gas (for example, nitrogen gas) and hermetically sealed so as not to come into contact with moisture from the outside.

[0004] By the way, in the package sealing process, in order to fix a lid (for example, quartz glass) to the main body of the package, high heat is applied to a metal joint portion disposed between the portions where both come into contact. On the other hand, the light-emitting element is supported by a substrate with high thermal conductivity (for example, a submount substrate) via a solder alloy (eutectic portion). Therefore, due to the heating during sealing of the package, high heat is transmitted to the solder alloy between the light-emitting element and the substrate, and the eutectic portion may remelt.

[0005] At this time, the edge of the eutectic part crushed by the self-weight of the light-emitting element may be pushed outwards from the bottom surface of the light-emitting element and come into contact with the side surface of the light-emitting element. In this case, problems such as a short circuit (pn short) between the p-layer and the n-layer of the light-emitting element (LED) occur. Further, as a result of the melting of the eutectic part, defects such as voids are generated at each interface of the light-emitting element / eutectic part / substrate and inside the eutectic part. Due to these defects, the thermal resistance and electrical resistance increase. Under such circumstances, an invention for solving the problems when the eutectic part exposed to high temperature melts is disclosed in Patent Document 1 below.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0007] The invention disclosed in Patent Document 1 is a method of connecting an electrode of a semiconductor chip on which a solder bump (eutectic part) is formed to a wiring substrate, and includes the following steps. That is, a sealing resin that cures at a curing temperature lower than the melting temperature of the eutectic part is supplied between the semiconductor chip and the wiring substrate, and the sealing resin is heated and cured at a temperature equal to or lower than the melting temperature of the eutectic part while applying a load from the back side of the semiconductor chip. Then, heat is applied to the eutectic part to melt it, and the electrode of the semiconductor chip and the wiring substrate are connected.

[0008] However, the invention disclosed in Patent Document 1 necessarily includes a sealing resin that cures at a temperature lower than the melting temperature of the eutectic portion between the semiconductor chip and the wiring board. In addition, the invention disclosed in Patent Document 1 includes two steps: a step of heating and curing the sealing resin, and a step of further increasing the temperature to melt the eutectic portion. As a result, the invention disclosed in Patent Document 1 has a complex structure and the steps are not simplified, leading to an increase in production costs. Furthermore, the invention disclosed in Patent Document 1 melts the eutectic portion after heating and curing the sealing resin, and does not prevent the re-melting of the already cured eutectic portion.

[0009] In view of the above problems, an object of the present invention is to provide a semiconductor light-emitting device, a method for manufacturing a semiconductor light-emitting device, and a sterilization device that do not cause an increase in production costs, and that prevent melting of the alloy contained in the eutectic portion (element containing an alloy) even when high heat is applied to the eutectic portion disposed between the light-emitting element and the substrate, and do not cause a short circuit or new defects in the light-emitting element.

Means for Solving the Problems

[0010] To solve the above problems, a semiconductor light-emitting device according to the present invention includes: a semiconductor light-emitting element; a base substrate; a eutectic portion disposed between the semiconductor light-emitting element and the base substrate; a frame portion standing from the edge of the base substrate and surrounding the semiconductor light-emitting element; a lid portion closing the opening of the frame portion; a joining portion joining the frame portion and the lid portion; and is provided with: the eutectic portion is: The composition ratio of Au and Sn is 73% or more of Au an AuSn-based alloy having a composition ratio in the Au-rich range; the composition ratio of the alloy is a composition ratio in which the melting point increases as the composition ratio of Au in the AuSn-based alloy increases; furthermore, the eutectic portion contains a plurality of locations where the composition ratio of the Au metal is higher than the surroundings; and is characterized in that the melting point of the eutectic portion is higher than the melting point of the joining portion.

[0011] In addition, the semiconductor light-emitting device according to the present invention includes a semiconductor light-emitting element, a submount substrate, a eutectic portion disposed between the semiconductor light-emitting element and the submount substrate, a base substrate on which the submount substrate is mounted, a frame portion standing from the edge of the base substrate and surrounding the semiconductor light-emitting element, a lid portion closing the opening of the frame portion, a joining portion joining the frame portion and the lid portion, and is provided with the eutectic portion is an AuSn-based alloy having a composition ratio in an Au-rich range where the composition ratio of Au and Sn is 73% or more of Au, the alloy has a composition ratio in which the melting point rises as the composition ratio of Au in the AuSn-based alloy increases, furthermore, in the eutectic portion, Said Au there are a plurality of portions where the composition ratio of the metal is higher than the surroundings, the melting point of the eutectic portion is higher than the melting point of the joining portion.

[0012] According to these aspects of the present invention, in the eutectic portion containing the first metal and the second metal, there are a plurality of portions where the composition ratio of the first metal is higher than the surroundings. Here, the eutectic portion of the present invention is an alloy containing the first metal and the second metal, and the melting point rises as the composition ratio of the first metal increases. Therefore, the portions where the composition ratio of the first metal is high do not melt even when exposed to an environment at a temperature higher than the temperature at which the eutectic portion normally melts (for example, the environment when joining the frame portion and the lid portion). As a result, it is possible to prevent a situation where a part of the melted alloy comes into contact with the side surface of the semiconductor light-emitting element and causes a short circuit, or a situation where new defects (voids, etc.) occur in the eutectic portion.

[0013] Note that the composition ratio refers to, for example, the ratio of the number of metal atoms of the same metal as the first metal contained in the alloy to the number of atoms of the alloy. For example, when the alloy is composed of metal atoms of the same metal as the first metal and other metal atoms (for example, the second metal), the composition ratio of the metal atoms of the same metal as the first metal in the alloy is represented by the following formula. (Formula) Composition ratio = N 1 / (N 1 + N 2 ) Here, in the above formula, N 1 : The number of atoms of the same metal atom as the first metal in the alloy N 2 : The number of atoms of other metal atoms in the alloy is shown.

[0014] Also, the manufacturing method of the semiconductor light-emitting device according to the present invention is a first step of preparing a semiconductor light-emitting element having an electrode, a second step of preparing a substrate provided with a wiring electrode, a third step of disposing a pre-eutectic metal part on at least one of the surface of the electrode or the surface of the wiring electrode, a fourth step of disposing a metal part containing the same first metal as the metal contained in the pre-eutectic metal part at at least one of the surface of the electrode, the surface of the wiring electrode, or the pre-eutectic metal part, a fifth step of aligning the electrode and the wiring electrode, applying pressure, and heating to eutectify the pre-eutectic metal part to form an eutectic part, and includes the eutectic part is , an Au-Sn alloy with a composition ratio of Au and Sn after melting such that the composition ratio of Au is 73% or more , In the process of eutectifying the pre-eutectic metal part in the fifth step, the first metal in the metal part moves to the eutectic part, increasing the composition ratio of the first metal in the eutectic part and mutating the melting point of the eutectic part to be higher than that of other parts.

[0015] According to this aspect of the present invention, in the process of eutectifying the pre-eutectic metal part, the first metal moves to the eutectic part, increasing the composition ratio of the first metal in the eutectic part and raising the melting point of the eutectic part. Therefore, the part with a high composition ratio of the first metal does not melt even when exposed to an environment at a temperature higher than the normal melting temperature of the eutectic part. This can prevent a situation where a part of the melted alloy contacts the side surface of the semiconductor light-emitting element and causes a short circuit, or a situation where new defects (voids, etc.) occur in the eutectic part.

[0016] In addition, the sterilization device according to the present invention is characterized in that it includes the semiconductor light-emitting device.

Advantages of the Invention

[0017] According to the present invention, it is possible to provide a semiconductor light-emitting device, a method for manufacturing a semiconductor light-emitting device, and a sterilization device that do not cause an increase in production cost, prevent melting of the alloy contained in the eutectic portion even when high heat is applied to the joint disposed between the semiconductor light-emitting element and the substrate, and do not cause a short circuit or new defects in the semiconductor light-emitting element.

Brief Description of the Drawings

[0018]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Embodiments for Carrying Out the Invention

[0019] Hereinafter, with reference to the drawings, a semiconductor light-emitting device according to an embodiment of the present invention will be described in detail. First, with reference to FIGS. 1 to 3, the semiconductor light-emitting device 1 according to the present embodiment will be described. Here, FIG. 1 is a vertical cross-sectional view of the semiconductor light-emitting device 1. Further, FIG. 2 is a schematic view showing a state before the semiconductor light-emitting element 10, the substrate (submount substrate) 20, and the eutectic portion 30 of the semiconductor light-emitting device 1 are taken out from the state of FIG. 1 and the semiconductor light-emitting element 10 and the substrate (submount substrate 20) are joined. Furthermore, FIG. 3 is a graph showing an outline of the phase diagram of the AuSn-based alloy contained in the eutectic portion in the present embodiment (horizontal axis: composition ratio of Au in the AuSn-based alloy. Vertical axis: melting point of the AuSn-based alloy).

[0020] Note that the vertical direction in FIG. 1 corresponds to the height direction of the semiconductor light-emitting device 1, the left-right direction in FIG. 1 corresponds to the width direction of the semiconductor light-emitting device 1, and the front-back direction in FIG. 1 corresponds to the depth direction of the semiconductor light-emitting device 1.

[0021] As shown in FIG. 1, the semiconductor light-emitting device 1 includes a semiconductor light-emitting element 10, a substrate (submount substrate) 20, a eutectic portion 30, a base substrate 40, and a package 50 including a frame portion 51 surrounding the semiconductor light-emitting element 10 and the like. Further, the semiconductor light-emitting device 10 further includes a submount substrate back surface electrode 60 and the like that are connected to an external power supply and supply power to the semiconductor light-emitting element 10.

[0022] Next, the semiconductor light-emitting element 10 in the present embodiment is an LED, but is not limited thereto. Examples of other semiconductor light-emitting elements 10 include semiconductor laser diodes. Further, the semiconductor light-emitting element 10 in the present embodiment is, for example, a deep ultraviolet LED including an AlGaN-based semiconductor, but is not limited thereto.

[0023] Examples of LEDs other than deep ultraviolet LEDs include near ultraviolet LEDs containing AlGaN-based semiconductors (however, the composition ratio of Al and Ga is different from that of deep ultraviolet LEDs), visible light LEDs containing GaN-based semiconductors, InGaN-based semiconductors, and the like. Although not particularly limited, deep ultraviolet LEDs are assumed to be LEDs whose peak emission wavelength belongs to the range of 100 nm to 280 nm. Also, near ultraviolet LEDs are assumed to be LEDs whose peak emission wavelength belongs to the range of 280 nm to 400 nm.

[0024] Next, the substrate 20 in the present embodiment is a ceramic formed into a flat plate shape called a so-called submount substrate (hereinafter, may be referred to as "submount substrate 20"). Further, the submount substrate 20 has high thermal conductivity. Heat generated in the semiconductor light emitting element 10 is exhausted through the submount substrate 20. The type of the submount substrate 20 in the present embodiment is AlN, but other ceramics, metals, etc. having high thermal conductivity may also be used.

[0025] The submount substrate 20 in the present embodiment is placed, for example, on a base substrate 40 such as AlN. However, the type of the base substrate 40 is not limited thereto. For example, as the material of the base substrate 40, silicon nitride (Si 3 N 4 ), silicon carbide (SiC), aluminum oxide (Al 2 O 3Ceramics made of nitrides, carbides, or oxides such as , diamond, and silicon (Si) can be used. The ceramics may be either high-temperature fired or low-temperature fired. Also, although this embodiment includes both the submount substrate 20 and the base substrate 40, it may include only the base substrate 40 without the submount substrate 20. In this case, the base substrate 40, the eutectic portion 30, and the semiconductor light-emitting element 10 are arranged in order from the bottom of the semiconductor light-emitting device 1. That is, the base substrate 40 functions as a substrate for fixing the semiconductor light-emitting element 10 at a predetermined position and as a substrate for exhausting heat from the semiconductor light-emitting element 10. Also, if it is a substrate made of a ceramic material, since it has ultraviolet resistance, even if a semiconductor light-emitting element 10 that emits ultraviolet light is selected, it will not deteriorate over a long period and can maintain the light output.

[0026] The semiconductor light-emitting element 10, the submount substrate 20, and the eutectic portion 30 that joins the two are housed in the package 50. As shown in FIG. 1, the package 50 includes a frame portion 51 that stands up from the edge of the base substrate 40 and surrounds the semiconductor light-emitting element 10 and the like, a lid portion 52 that closes the opening of the frame portion 51, and a joining portion 53 for joining the lid portion 52 covering the frame portion 51 to the frame portion 51.

[0027] Here, the lid portion 52 in this embodiment is quartz glass. However, as long as it is a member that does not absorb light (for example, deep ultraviolet light) from the semiconductor light-emitting element 10, the type of the lid portion 52 is not limited to quartz glass and may be quartz, UV-transmitting glass, or the like.

[0028] In this embodiment, the state before joining the semiconductor light-emitting element 10 and the submount substrate 20 is shown in FIG. 2. For clarity, the package 50 and the like are omitted. In the p-side electrode 11 and the n-side electrode 12 of the semiconductor light-emitting element 10, a plurality of conductive materials (Ni, Cr, Au, Cu, Pt, Ti, Pd, Al, W, ITO, etc.) are laminated, and a predetermined first metal, for example, Au, is disposed on the outermost surface thereof. Further, a pre-eutectic metal part 30' is formed on the p-side wiring electrode 21 and the n-side wiring electrode 22 formed on the surface of the submount substrate 20. In the pre-eutectic metal part 30', a predetermined first metal, for example, an Au layer and a predetermined second metal, for example, an Sn layer are alternately laminated, and the film thickness is adjusted so that the composition ratio of Au and Sn after melting is a composition ratio in which Au is 73% or more, for example, Au 75%:Sn 25%. Alternatively, the pre-eutectic metal part 30' includes an alloy layer in which a predetermined first metal, for example, Au and a predetermined second metal, for example, Sn have a composition ratio of Au:Sn of 75:25. Further, a plurality of metal parts 31 containing a predetermined first metal are disposed on the surface of the pre-eutectic metal part 30'. This metal part 31 has, for example, a particulate form. The size of the metal part 31 is, for example, about 1 to 5 μm. Further, the thickness of the pre-eutectic metal part 30' is preferably larger than the size of the metal part 31. Although the metal part 31 is disposed on the pre-eutectic metal part 30' in FIG. 2, it may be disposed on the surface of the p-side electrode 11 or the n-side electrode 12. Further, for attaching the particulate metal part 31, for example, electron beam evaporation may be used. By adjusting the irradiation conditions of the electron beam, the density and size of the particles can be controlled. In this case, the arrangement of the metal parts 31 becomes random.

[0029] When joining the semiconductor light-emitting element 10 and the submount substrate 20, alignment is performed so that the p-side electrode 11 and the n-side electrode 12 are respectively aligned with the pre-eutectic metal part 30' on the p-side wiring electrode 21 and the pre-eutectic metal part 30' on the n-side wiring electrode 22. While applying pressure from the vertical direction to the semiconductor light-emitting element 10 and the submount substrate 20, heating is performed to melt the pre-eutectic metal part 30'. To melt the pre-eutectic metal part 30', for example, if it is an AuSn alloy with a composition ratio of Au 75%:Sn 25%, heating is performed at 280°C, which is its eutectic temperature. The metal part 31 is sandwiched between the surface of the p-side electrode 11 and the surface of the pre-eutectic metal part 30' on the p-side wiring electrode 21, or between the surface of the n-side electrode 12 and the surface of the pre-eutectic metal part 30' on the n-side wiring electrode 22. Then, in the process where the surrounding pre-eutectic metal part 30' melts and becomes eutectic, the first metal in the metal part 31 diffuses to the surroundings, causing the composition ratio in the eutectic part 30 in the diffused range to be biased more towards the first metal-rich side. That is, the composition ratio of the first metal around the location where the metal part 31 exists becomes higher than that of other locations. As a result, the eutectic temperature of the eutectic part 30 around the metal part 31 rises, and the fluidity decreases.

[0030] More specifically, as shown in FIG. 3, the melting point of the AuSn-based alloy rapidly rises in a range with a high composition ratio of Au (Au-rich range) containing 75% or more of Au atoms, for example. As described above, when a high temperature (for example, 280°C) is applied to the eutectic part 30, the Au atoms contained in the metal part 31 move towards the AuSn-based alloy contained in the pre-eutectic metal part 30'. As a result, the melting point of the AuSn-based alloy rises and mutates to have a melting point higher than the applied temperature.

[0031] Thus, even when a high temperature is applied to the eutectic portion 30 as in the sealing process of the package 50, melting of the eutectic portion 30 can be prevented. Along with this, it is possible to prevent a situation where the eutectic alloy comes into contact with the side surface of the semiconductor light-emitting element and causes a short circuit, and a situation where new defects (voids, etc.) occur at each interface of the semiconductor light-emitting element / eutectic portion / substrate and within the eutectic portion 30. However, the type of metal contained in the metal portion 31 and the alloy contained in the pre-eutectic metal portion 30' is not limited to this as long as the alloy has the property that the melting point increases when the metal becomes rich in the alloy. Examples of alloys having this property include CuSn alloys, AgSn alloys, and the like.

[0032] The package sealing process in the present embodiment is as follows, for example. First, in an environment of a chemically inert gas (e.g., nitrogen gas), a semiconductor light-emitting element 10 or a submount substrate 20 with the semiconductor light-emitting element 10 mounted thereon is placed on the wiring formed on the base substrate 40 inside the frame portion 51 not covered by the lid portion 52. Subsequently, a bonding portion 53 is applied to the upper end 51U of the frame portion 51, and the lid portion 52 is covered. Then, the bonding portion 53 is heated (a high temperature is applied) to bond the lid portion 52 to the frame portion 51. Thereby, the package 50 is sealed. Along with this, the inside of the package 50 is filled with an inert gas. As the bonding portion 53, for example, one containing the same components as the eutectic portion 30 such as AuSn solder is used (for example, when the eutectic portion 30 is composed of Au and Sn, the bonding portion 53 is also composed of Au and Sn. However, the composition ratio of Au and Sn in the bonding portion 53 is different from that in the eutectic portion 30).

[0033] The eutectic temperature of the eutectic portion 30 provided in the semiconductor light-emitting device 1 has been raised to such an extent that it does not melt at the temperature at which the lid portion 52 is bonded in the package sealing process. Therefore, when the package 50 is sealed, the eutectic portion 30 does not melt even when a high temperature is applied. That is, the present embodiment is suitable for a semiconductor light-emitting device sealed to prevent moisture absorption.

[0034] The metal part 31 does not necessarily remain in a form with a clearly distinguishable boundary within the eutectic part 30. However, even in such a case, at the location where the metal part 31 exists, within the eutectic part 30 as well, the composition ratio of a predetermined first metal, for example Au, is higher than that of the surroundings, which can be observed by scanning the cleavage plane with a Scanning Electron Microscopy (SEM) and confirmed by Energy Dispersive X-ray Spectroscopy (EDX).

[0035] Next, referring to FIG. 4, a first modification example of the semiconductor light-emitting device 1 according to the present embodiment will be shown. As described above, the metal part 31 does not necessarily remain in a form with a distinguishable boundary within the eutectic part 30. However, for the convenience of explaining the following modification examples, in FIGS. 4 to 7, the metal part 31 is represented as remaining. Also, similar to FIG. 2, the package 50 and the like are omitted. First, in FIG. 4(a), the metal part 31 is formed on the pre-eutectic metal part 30' with a regular and uniform density by patterning or the like, and is sandwiched between the p-side electrode 11, the n-side electrode 12, and the pre-eutectic metal part 30' through the eutectic bonding process. Then, after the heat treatment, it is disposed between the p-side electrode 11, the n-side electrode 12, and the eutectic part 30. The state after the eutectic bonding process is shown in FIG. 4(b). Thereby, the metal part 31 and the eutectic part 30 are adjacent along the height direction. At this time, the first metal constituting the metal part 31 moves to the eutectic part 30, and a first metal-rich region is formed at least in the vicinity of the metal part 31 in the eutectic part 30. As a result, even when a high temperature is applied to the eutectic part 30, during the eutectic bonding process, the metal atoms already contained in the metal part 31 have moved over a wide range within the eutectic part 30, and since the melting point has increased, it will not melt.

[0036] In the example shown in FIG. 4(a), the metal part 31 may be disposed on the pre-eutectic metal part 30', and the semiconductor light-emitting element 10 may be bonded thereon. On the other hand, the metal part 31 may be attached to the bottom surface of the semiconductor light-emitting element 10, and both may be bonded with the attachment surface (bottom surface side) of the metal part 31 of the semiconductor light-emitting element 10 facing the pre-eutectic metal part 30'.

[0037] Next, referring to FIG. 5, a second modification example of the semiconductor light-emitting device 1 according to the present embodiment will be described. In FIG. 5(a), the metal part 31 and the pre-eutectic metal part 30' are alternately arranged on the p-side wiring electrode 21 and the n-side wiring electrode 22. Then, in FIG. 5(b), the p-side electrode 11 and the n-side electrode 12 are placed through an eutectic bonding process. As a result, the metal part 31 is in contact with the eutectic part 30 and the p-side electrode 11 and the n-side electrode 12 (including a predetermined first metal on the outermost surface) at both interfaces in the width direction and the interface in the height direction of FIG. 5(b) (that is, at least at three interfaces). At this time, the first metal constituting the metal part 31 moves to the eutectic part 30, and a first metal-rich region is formed in at least the vicinity of the metal part 31 in the eutectic part 30. As a result, even when a high temperature is applied to the eutectic part 30, during the eutectic bonding process, the metal atoms already contained in the metal part 31 have moved over a wide range in the eutectic part 30, and since the melting point has increased, it does not melt.

[0038] Next, referring to FIG. 6, a third modification example of the semiconductor light-emitting device 1 according to the present embodiment will be described. In FIG. 6(a), the metal part 31 and the pre-eutectic metal part 30' that are alternately arranged in the width direction are arranged on the p-side wiring electrode 21 and the n-side wiring electrode 22 so that their height dimensions are different. Then, in FIG. 6(b), the p-side electrode 11 and the n-side electrode 12 are placed through an eutectic bonding process. Also in this example, the metal part 31 is in contact with the eutectic part 30 at both interfaces in the width direction. At this time, the first metal constituting the metal part 31 moves to the eutectic part 30, and a first metal-rich region is formed in at least the vicinity of the metal part 31 in the eutectic part 30. As a result, even when a high temperature is applied to the eutectic part 30, during the eutectic bonding process, the metal atoms already contained in the metal part 31 have moved over a wide range in the eutectic part 30, and since the melting point has increased, it does not melt.

[0039] Next, referring to FIG. 7(a), a fourth modification example of the semiconductor light-emitting device 1 according to the present embodiment will be described. In FIG. 7(a), particulate metal portions 31 are disposed on the p-side wiring electrode 21 and the n-side wiring electrode 22. On the other hand, pre-eutectic metal portions 30' are formed on the surfaces of the p-side electrode 11 and the n-side electrode 12. Then, in FIG. 7(b), through an eutectic bonding process, the p-side wiring electrode 21 and the p-side electrode 11, and the n-side wiring electrode 22 and the n-side electrode 12 are bonded by an eutectic portion 30. As a result, the metal portions 31 are adjacent to the eutectic portion 30 along the height direction and the width direction. At this time, the first metal constituting the metal portions 31 moves to the eutectic portion 30, and a first metal-rich region is formed at least in the vicinity of the metal portions 31 in the eutectic portion 30. As a result, even when a high temperature is applied to the eutectic portion 30, during the eutectic bonding process, the metal atoms already contained in the metal portions 31 have moved over a wide range within the eutectic portion 30, and since the melting point has risen, they do not melt.

[0040] Note that, in the semiconductor light-emitting device 1 according to the above-described embodiment, an example in which only one semiconductor light-emitting element 10 is mounted on the base substrate 40 and the submount substrate 20 has been shown. However, the number of semiconductor light-emitting elements 10 to be mounted may be two or more.

[0041] Also, in the semiconductor light-emitting device 1 according to the above-described embodiment, an example including a frame portion 51 erected from the edge of the base substrate 40 and a lid portion 52 closing the opening of the frame portion 51 has been shown. However, instead of the frame portion 51 and the lid portion 52, for example, a dome-shaped window material may be used to seal the periphery of the element.

[0042] The semiconductor light-emitting device 1 described above can be used as a light source for, for example, a lighting device, a sterilization device, a deodorization device, a resin curing device, and the like.

[0043] The embodiments of the present invention have been described in detail above. However, the foregoing description is for facilitating the understanding of the present invention, and is not described with the intention of limiting the present invention. The present invention may include those that can be changed and improved without departing from the gist thereof. Also, equivalents of the present invention are included therein.

Description of Reference Numerals

[0044] 1…Semiconductor light-emitting device 10…Semiconductor light-emitting element 11…p-side electrode 12…n-side electrode 20…Substrate (submount substrate) 21…p-side wiring electrode 22…n-side wiring electrode 30…Eutectic part 40…Substrate (base substrate) 50…Package 51…Frame part 51u…Upper surface of the frame part 52…Cover part 53…Joint part 60…Back surface electrode of the submount substrate

Claims

1. A semiconductor light-emitting element, a base substrate, a eutectic portion disposed between the semiconductor light-emitting element and the base substrate, a frame portion erected from an edge of the base substrate and surrounding the semiconductor light-emitting element, a lid portion closing an opening of the frame portion, a joining portion joining the frame portion and the lid portion, comprising, the eutectic portion is an AuSn-based alloy having a composition ratio in an Au-rich range where the composition ratio of Au and Sn is 73% or more of Au, the composition ratio of the alloy is a composition ratio in which the melting point increases as the composition ratio of Au in the AuSn-based alloy increases, furthermore, the eutectic portion includes a plurality of locations where the composition ratio of the Au metal is higher than the surroundings, a semiconductor light-emitting device in which the melting point of the eutectic portion is higher than the melting point of the joining portion.

2. A semiconductor light-emitting element, a submount substrate, a eutectic portion disposed between the semiconductor light-emitting element and the submount substrate, a base substrate on which the submount substrate is mounted, a frame portion erected from an edge of the base substrate and surrounding the semiconductor light-emitting element, a lid portion closing an opening of the frame portion, a joining portion joining the frame portion and the lid portion, comprising, the eutectic portion is an AuSn-based alloy having a composition ratio in an Au-rich range where the composition ratio of Au and Sn is 73% or more of Au, the alloy is a composition ratio in which the melting point increases as the composition ratio of Au in the AuSn-based alloy increases, furthermore, the eutectic portion includes a plurality of locations where the composition ratio of the Au metal is higher than the surroundings, a semiconductor light-emitting device in which the melting point of the eutectic portion is higher than the melting point of the joining portion.

3. The semiconductor light-emitting device according to claim 1 or claim 2, wherein in the eutectic portion, locations where the composition ratio of the Au metal is higher than the surroundings are randomly arranged.

4. The semiconductor light-emitting device according to claim 1 or claim 2, wherein in the eutectic portion, locations where the composition ratio of the Au metal is higher than the surroundings are regularly arranged.

5. A first step of preparing a semiconductor light-emitting element having electrodes, a second step of preparing a substrate having wiring electrodes, a third step of disposing a pre-eutectic metal portion on at least one of the surface of the electrodes or the surface of the wiring electrodes, a fourth step of disposing a metal portion containing the same first metal as the metal contained in the pre-eutectic metal portion on at least one of the surface of the electrodes, the surface of the wiring electrodes, or the pre-eutectic metal portion, a fifth step of aligning the electrodes and the wiring electrodes, applying pressure, and heating to eutectify the pre-eutectic metal portion to form a eutectic portion, including, The eutectic part is an Au—Sn based alloy having a composition ratio of Au and Sn after melting such that the composition ratio of Au is 73% or more, The process in which the pre-eutectic metal part in the fifth step undergoes eutectic is a method for manufacturing a semiconductor light-emitting device in which the first metal of the metal part moves to the eutectic part, increasing the composition ratio of the first metal in the eutectic part higher than other locations, and mutating the melting point of the eutectic part to be higher than other locations.

6. The method for manufacturing a semiconductor light-emitting device according to claim 5, wherein the metal part containing the first metal is in a particulate state.

7. The fourth step is the method for manufacturing a semiconductor light-emitting device according to claim 5, wherein a metal part containing the first metal is arranged by patterning at at least any one of the surface of the electrode, the surface of the wiring electrode, or the pre-eutectic metal part.

8. The method for manufacturing a semiconductor light-emitting device according to any one of claims 5 to 7, wherein the substrate is a submount substrate.

9. The method for manufacturing a semiconductor light-emitting device according to any one of claims 5 to 7, wherein the substrate is a base substrate.

10. The substrate is further provided with a frame part that stands along the edge of the substrate so as to surround the semiconductor light-emitting element, The method for manufacturing a semiconductor light-emitting device according to claim 9, further comprising a sixth step of joining a lid part to the upper end of the frame part so as to cover the semiconductor light-emitting element after the fifth step.

11. A sterilization device including the semiconductor light-emitting device according to any one of claims 1 to 4.

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