Substrate processing apparatus and substrate processing method

Abstract

To provide a substrate processing apparatus and a substrate processing method that can facilitate adhesion of a solvent to a substrate.SOLUTION: A solvent supply unit 19 of a substrate processing apparatus 1 is disposed at a position higher than an opening 2A on the upper surface of a processing tank 2, and supplies mist of a solvent from the outside of the processing tank 2 toward the inside of the processing tank 2 in a plan view. When the substrate W is immersed in the processing liquid, a control unit 61 performs a solvent supply operation of reducing the pressure in a chamber 3 and supplying the mist of the solvent from the solvent supply unit 19. In a solvent supply state in which the pressure in the chamber 3 is reduced and the solvent is supplied, the control unit 61 causes a lifter 4 to remove the substrate W from the processing liquid in the processing tank 2, and then opens a QDR valve 11 to discharge the processing liquid from the processing tank 2. In the solvent supply state, the control unit 61 causes the lifter 4 to lower the substrate W to a lower position H3 in the processing tank 2 where no processing liquid is stored, and then causes the lifter 4 to raise the substrate W.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate. Examples of the substrate include a semiconductor substrate, a substrate for a flat panel display (FPD), a glass substrate for a photomask, a substrate for an optical disk, a substrate for a magnetic disk, a ceramic substrate, a substrate for a solar cell, and the like. Examples of the FPD include a liquid crystal display device, an organic electroluminescence (EL) display device, and the like.

Background Art

[0002] Conventional substrate processing apparatuses include a chamber, a processing tank installed in the chamber, and a holding unit for holding a substrate (see, for example, Patent Document 1). The processing tank stores a processing liquid. The substrate held by the holding unit is raised and lowered between a lower position in the processing tank and an upper position in the chamber above the processing tank.

[0003] The substrate processing apparatus also includes a solvent discharge unit and a water repellent discharge unit. The solvent discharge unit and the water repellent discharge unit are each disposed in the chamber. The solvent discharge unit discharges vapor of isopropyl alcohol (IPA). The water repellent discharge unit discharges water repellent vapor.

[0004] The substrate held by the holding unit is immersed in the processing liquid in the processing tank. Then, the inside of the chamber is depressurized, and IPA vapor is discharged into the chamber from the solvent discharge unit. In this state, the substrate is pulled up above the processing tank. As a result, the substrate is exposed to the atmosphere of the IPA vapor, and thereby the processing liquid attached to the substrate is replaced with IPA (solvent). Then, water repellent vapor is discharged into the chamber from the water repellent discharge unit.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] However, IPA vapor hardly adheres to the substrate, and the substitution treatment with IPA (solvent) may be insufficient. For example, if the treatment liquid (e.g., pure water) remains on the substrate, the water-repellent treatment (silylation treatment) will be insufficient. As a result, pattern collapse cannot be prevented well.

[0007] The present invention has been made in view of such circumstances, and an object thereof is to provide a substrate processing apparatus and a substrate processing method capable of easily adhering a solvent to a substrate.

Means for Solving the Problems

[0008] In order to achieve such an object, the present invention has the following configuration. That is, a substrate processing apparatus for processing a substrate according to the present invention includes a processing tank for storing a processing liquid, a chamber for accommodating the processing tank, a decompression pump for decompressing the inside of the chamber, a lifter for raising and lowering the substrate in the chamber while holding the substrate, an on-off valve for discharging the processing liquid from the processing tank, and a solvent supply unit provided in the chamber, which is disposed at a position higher than an opening formed on the upper surface of the processing tank, and also supplies at least one of mist-shaped and droplet-shaped solvents from the outside of the processing tank toward the inside of the processing tank in a plan view, and a control unit. The control unit performs a solvent supply operation of decompressing the inside of the chamber by the decompression pump and supplying at least one of mist-shaped and droplet-shaped solvents from the solvent supply unit when the substrate is immersed in the processing liquid. The control unit takes out the substrate from the processing liquid in the processing tank by the lifter in a solvent supply state where the inside of the chamber is decompressed and the solvent is supplied, and then discharges the processing liquid from the processing tank by opening the on-off valve. The control unit lowers the substrate by the lifter to a position in the processing tank where the processing liquid is not stored in the solvent supply state, a preset lower standby time, causing the lifter to standby with the substrate at a position within the processing tank, and then raises the substrate by the lifter, a preset upper standby time, causing the lifter to standby with the substrate at a position where the substrate has been lifted perform the substrate lifting operation and the lower standby time is longer than the upper standby time which is characterized in that...

[0009] According to the substrate processing apparatus of the present invention, at least one of a mist-like and a droplet-like solvent is supplied from the solvent supply unit. Thereby, after taking out the substrate from the processing liquid stored in the processing tank, it is possible to make the solvent more likely to adhere to the substrate than the solvent vapor. Therefore, the solvent can be efficiently adhered to the substrate.

[0011] For example, when supplying a mist-like solvent, the substrate is lifted and lowered to suppress uneven adhesion of the solvent. At this time, the lower standby time for the substrate to standby at the position in the processing tank is made longer than the upper standby time for the substrate to standby at the position where the substrate is lifted. This is because, for example, when supplying a mist-like solvent, the amount of the solvent adhering to the substrate is larger when the substrate is arranged at the position in the processing tank than when the substrate is arranged at the position above the processing tank in the chamber. Thereby, the solvent can be adhered to the substrate more efficiently. That is, the consumption amount of the solvent can be reduced and the processing time can be shortened.

[0012] Further, in the above-described substrate processing apparatus, it is preferable that the substrate lifting operation is performed a plurality of times. The more the substrate lifting operation is repeated, the more uneven adhesion of the solvent can be suppressed.

[0013] Also, A substrate processing apparatus according to the present invention includes a processing tank for storing a processing liquid, a chamber for accommodating the processing tank, a decompression pump for decompressing the inside of the chamber, a lifter for raising and lowering the substrate within the chamber while holding the substrate, an on-off valve for discharging the processing liquid from the processing tank, and a solvent supply unit provided within the chamber, which is disposed at a position higher than an opening formed on the upper surface of the processing tank, and which supplies at least one of mist-shaped and droplet-shaped solvents from the outside of the processing tank toward the inside of the processing tank in a plan view. a water repellent nozzle for supplying water repellent vapor into the chamber and a control unit. The control unit performs a solvent supply operation of decompressing the inside of the chamber by the decompression pump and supplying at least one of mist-shaped and droplet-shaped solvents from the solvent supply unit when the substrate is immersed in the processing liquid. The control unit causes the lifter to take out the substrate from the processing liquid within the processing tank when the inside of the chamber is decompressed and in a solvent supply state where the solvent is supplied, and then discharges the processing liquid from the processing tank by opening the on-off valve. The control unit performs a substrate lifting and lowering operation of lowering the substrate to a position within the processing tank where the processing liquid is not stored by the lifter and then raising the substrate by the lifter when in the solvent supply state. The control unit causes the water repellent nozzle to supply the water repellent vapor to the substrate after performing the substrate lifting operation and after stopping the supply of the solvent. It is characterized by the above.

[0014] According to the substrate processing apparatus of the present invention, at least one of mist-shaped and droplet-shaped solvents is supplied from the solvent supply unit. Thereby, after taking out the substrate from the processing liquid stored in the processing tank, it is possible to make the solvent more likely to adhere to the substrate than the solvent vapor. Therefore, the solvent can be efficiently adhered to the substrate. Also, Since at least one of a mist-like and a droplet-like solvent is supplied from the solvent supply unit, it is possible to easily attach the solvent to the substrate. Therefore, it is possible to prevent the substitution treatment with the solvent from becoming insufficient and the treatment liquid from remaining on the substrate. Further, the treatment liquid remaining on the substrate hinders the attachment of the water repellent to the substrate. By being able to sufficiently perform the substitution treatment with the solvent, it is possible to favorably perform the water repellency treatment with the water repellent.

[0015] Further, in the substrate processing apparatus described above, it is preferable that, after stopping the supply of the water repellent vapor, the control unit performs a second solvent supply operation of reducing the pressure inside the chamber by the vacuum pump and supplying at least one of a mist-like and a droplet-like solvent from the solvent supply unit. Thereby, the water repellent and the particles derived from the water repellent can be washed away.

[0016] Further, in the substrate processing apparatus described above, it is preferable that the second solvent supply operation is performed when the lifter has the substrate waiting at a position in the processing tank where the processing liquid is not stored. When washing away the water repellent or the like, it is possible to increase the amount of the solvent attached to the substrate.

[0017] Further, in the substrate processing apparatus described above, when the second solvent supply operation is being performed, the control unit lowers the substrate to a position in the processing tank by the lifter, makes the lifter wait with the substrate at the position in the processing tank for a preset second lower waiting time, then raises the substrate by the lifter, makes the lifter wait with the substrate at the position where the substrate has been raised for a preset second upper waiting time, and it is preferable that the second lower waiting time is longer than the second upper waiting time.

[0018] For example, when supplying a mist-like solvent, the substrate is raised and lowered to suppress uneven adhesion of the solvent. At this time, the lower standby time for waiting for the substrate at a position in the processing tank is made longer than the upper standby time for waiting for the substrate at the position where the substrate is raised. This is because, for example, when supplying a mist-like solvent, the amount of the solvent adhering to the substrate is larger when the substrate is arranged at a position in the processing tank than when the substrate is arranged at a position above the processing tank in the chamber. Thereby, the solvent can be adhered to the substrate more efficiently. That is, the consumption amount of the solvent can be reduced and the processing time can be shortened.

[0019] Further, the substrate processing method according to the present invention is a substrate processing method of a substrate processing apparatus including a processing tank for storing a processing liquid, a chamber for housing the processing tank, a decompression pump for decompressing the inside of the chamber, a lifter for raising and lowering the substrate in the chamber while holding the substrate, and an on-off valve for discharging the processing liquid from the processing tank, the method including: a solvent supply step of decompressing the inside of the chamber by the decompression pump and supplying at least one of a mist-like and a droplet-like solvent from a solvent supply unit when the substrate is immersed in the processing liquid; a substrate taking-out step of taking out the substrate from the processing liquid in the processing tank by the lifter when the inside of the chamber is decompressed and in a solvent supply state where the solvent is supplied; a processing liquid discharging step of discharging the processing liquid from the processing tank by opening the on-off valve when in the solvent supply state and after performing the substrate taking-out step; and a substrate raising and lowering step of lowering the substrate by the lifter to a position in the processing tank where the processing liquid is not stored, a preset lower standby time, causing the lifter to standby with the substrate at a position within the processing tank, and then raising the substrate by the lifter , a preset upper standby time, causing the lifter to standby with the substrate at a position where the substrate has been lifted characterized in that the solvent supply unit is provided in the chamber, the solvent supply unit is arranged at a position higher than an opening formed on the upper surface of the processing tank, and in a plan view, at least one of the mist-like and the droplet-like solvents is supplied from the outside of the processing tank toward the inside of the processing tank. and the lower standby time is longer than the upper standby time This is what is characterized thereby.

Effect of the Invention

[0020] According to the substrate processing apparatus and the substrate processing method of the present invention, it is possible to easily attach a solvent to the substrate.

Brief Description of the Drawings

[0021]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Example 1

[0022] Hereinafter, Example 1 of the present invention will be described with reference to the drawings. FIG. 1 is a longitudinal sectional view showing a schematic configuration of a substrate processing apparatus according to Example 1. FIG. 2 is a plan view showing the mist nozzles 29 and 30 of two solvent supply units 19.

[0023] (1) Configuration of the substrate processing apparatus Refer to FIG. 1. The substrate processing apparatus 1 performs a drying process on a plurality of substrates W (for example, 50 or 25 substrates). Each substrate W is formed, for example, in a disc shape. On the front surface (surface or main surface) of each substrate W, patterns such as elements are formed, for example. In this case, the surface on the opposite side of the front surface of the substrate W is called the back surface.

[0024] The substrate processing apparatus 1 includes a processing tank 2 for storing a processing liquid, a chamber 3 for housing the processing tank 2, a lifter 4, and two ejection pipes 5. The processing tank 2 is disposed at the lower part inside the chamber 3 and is spaced apart from the bottom surface inside the chamber 3. An opening 2A is formed on the upper surface of the processing tank 2. The processing liquid that overflows from the opening 2A is stored at the bottom inside the chamber 3.

[0025] The lifter 4 raises and lowers a plurality of substrates W inside the chamber 3 while holding the plurality of substrates W. The lifter 4 includes a holding portion 4A for holding the plurality of substrates W in a vertical posture and a lifting portion 4B for raising and lowering the holding portion 4A in the vertical direction (Z direction). The plurality of substrates W held by the holding portion 4A are arranged at equal intervals in the thickness direction of each substrate W. For example, in FIG. 1, the direction in which the plurality of substrates W are aligned is the Y direction.

[0026] The lifting portion 4B includes, for example, an electric motor. The lifting portion 4B can move the plurality of substrates W held by the holding portion 4A to, for example, a delivery position H1 above the chamber 3, an upper position H2 inside the chamber 3 and above the processing tank 2, and a lower position (immersion processing position) H3 inside the processing tank 2. Note that the upper position H2 is preferably a position where the lower end of each substrate W is higher than the two solvent supply portions 19 described later. Also, the upper position H2 may be a height position where the two solvent supply portions 19 are disposed between the center of each substrate W and the lower end of each substrate W.

[0027] At the bottom inside the processing tank 2, two ejection pipes 5 for supplying the processing liquid into the processing tank 2 are provided. Each ejection pipe 5 is linearly formed along the Y direction in which the plurality of substrates W are aligned. Each ejection pipe 5 has a plurality of ejection ports arranged in the Y direction.

[0028] The tip of the processing liquid pipe 7 branches into two. As a result, the two tips of the processing liquid pipe 7 are respectively connected to the two ejection pipes 5. The base end of the processing liquid pipe 7 is connected to the processing liquid supply source 9. The processing liquid supply source 9 sends, for example, pure water as the processing liquid to the processing liquid pipe 7. As the pure water, for example, deionized water (DIW) is used. An on-off valve V1 is provided in the processing liquid pipe 7. The on-off valve V1 supplies and stops the supply of pure water. For example, when the on-off valve V1 is opened, pure water is supplied from the two ejection pipes 5. Also, when the on-off valve V1 is closed, the supply of pure water from the two ejection pipes 5 is stopped.

[0029] Note that, as the processing liquid, a diluted IPA liquid obtained by diluting an isopropyl alcohol (IPA) liquid with pure water may be used. Also, the two ejection pipes 5 may be configured to be able to selectively eject pure water and the diluted IPA liquid.

[0030] Also, the substrate processing apparatus 1 includes a QDR valve 11 provided at the bottom of the processing tank 2. The QDR valve 11 discharges the processing liquid (for example, pure water) from the processing tank 2. Specifically, the QDR valve 11 discharges the pure water in the processing tank 2 to the bottom surface in the chamber 3. When the QDR valve 11 is opened, the pure water in the processing tank 2 is rapidly discharged to the bottom of the chamber 3. When the QDR valve 11 is closed, the pure water can be stored in the processing tank 2. Note that the QDR valve 11 corresponds to the on-off valve of the present invention.

[0031] The chamber 3 includes an opening 3A through which a plurality of substrates W pass and an upper cover 13 that closes the opening 3A. The opening 3A is provided in the ceiling portion of the chamber 3. When the upper cover 13 is opened, a plurality of substrates W can be passed through the opening 3A. When the upper cover 13 is closed, the space in the chamber 3 is closed.

[0032] In addition, the substrate processing apparatus 1 includes two inert gas nozzles 15, two water repellent agent vapor nozzles 17, and two solvent supply units (two nozzle rows) 19. The two inert gas nozzles 15, the two water repellent agent vapor nozzles 17, and the two solvent supply units 19 are each provided in the chamber 3. Note that the solvent supply unit 19 corresponds to the solvent supply unit of the present invention. The water repellent agent vapor nozzle 17 corresponds to the water repellent agent nozzle of the present invention.

[0033] Between the upper cover 13 and the processing tank 2, two inert gas nozzles 15, two water repellent agent vapor nozzles 17, and two solvent supply units 19 are arranged in order from above. Specifically, the two inert gas nozzles 15 are arranged near the upper cover 13. In addition, the two inert gas nozzles 15 are arranged between the upper cover 13 and the two water repellent agent vapor nozzles 17. The two water repellent agent vapor nozzles 17 are arranged between the two inert gas nozzles 15 and the two solvent supply units 19.

[0034] The two solvent supply units 19 are arranged between the two water repellent agent vapor nozzles 17 and the processing tank 2. The two solvent supply units 19 are arranged at a position higher than the opening 2A formed in the upper surface of the processing tank 2. The two solvent supply units 19 are arranged near the outer edge of the opening 2A of the processing tank 2, that is, near the upper end of the side wall of the processing tank 2.

[0035] Each solvent supply unit 19 supplies mist-like solvent from the outside of the processing tank 2 (or the opening 2A) toward the inside of the processing tank 2 in a plan view. That is, as shown in FIG. 2, the two solvent supply units 19 are arranged on both sides of the processing tank 2 (or the opening 2A) in a plan view. Similarly, the two inert gas nozzles 15 are arranged on both sides of the processing tank 2 in a plan view. Similarly, the two water repellent agent vapor nozzles 17 are arranged on both sides of the processing tank 2 in a plan view.

[0036] The two inert gas nozzles 15 and the two water repellent agent vapor nozzles 17 each extend linearly in the Y direction. Each inert gas nozzle 15 and each water repellent agent vapor nozzle 17 are formed in a tubular shape. Each inert gas nozzle 15 and each water repellent agent vapor nozzle 17 have a plurality of discharge ports arranged in the Y direction.

[0037] The two inert gas nozzles 15 each supply an inert gas into the chamber 3. The tip of the supply pipe 21 branches into two. As a result, the two tips of the supply pipe 21 are respectively connected to the two inert gas nozzles 15 as shown in FIG. 1. The base end of the supply pipe 21 is connected to the first inert gas supply source 23. The first inert gas supply source 23 sends, for example, nitrogen gas as an inert gas to the supply pipe 21. An on-off valve V2 is provided in the supply pipe 21. The on-off valve V2 supplies and stops the supply of the inert gas.

[0038] The two water repellent agent vapor nozzles 17 each supply a water repellent agent vapor into the chamber 3. The tip of the supply pipe 25 branches into two. As a result, the two tips of the supply pipe 25 are respectively connected to the two water repellent agent vapor nozzles 17. The base end of the supply pipe 25 is connected to the water repellent agent vapor supply source 27. The water repellent agent vapor supply source 27 sends the water repellent agent vapor to the supply pipe 25. The water repellent agent vapor is generated by evaporating a liquid water repellent agent with a heater. The water repellent agent vapor may contain an inert gas (for example, nitrogen gas) as a carrier gas. An on-off valve V3 is provided in the supply pipe 25. The on-off valve V3 supplies and stops the supply of the water repellent agent vapor. The water repellent agent modifies the surface of the substrate W to be water repellent. As the water repellent agent, for example, a silicon-based water repellent agent or a metal-based water repellent agent is used. The water repellent agent is also called a silylating agent.

[0039] The two solvent supply units 19 each supply a mist-like solvent into the chamber 3. Referring to FIG. 2. The first solvent supply unit 19 includes a plurality of mist nozzles 29 arranged in the Y direction. The second solvent supply unit 19 includes a plurality of mist nozzles 30 arranged in the Y direction. Each of the mist nozzles 29, 30 is composed of a two-fluid nozzle. The two-fluid nozzle is a nozzle that mixes a solvent and an inert gas and ejects a mist-like solvent. That is, the solvent is sprayed by the two-fluid nozzle.

[0040] The tip of the solvent supply pipe 31 is connected to each of the mist nozzles 29, 30 (solvent supply section 19). For example, when the solvent supply section 19 includes six mist nozzles 29, 30, the tip of the solvent supply pipe 31 branches into six. For example, the six tips are respectively connected to the six mist nozzles 29, 30. The base end of the solvent supply pipe 31 is connected to a solvent supply source 33. The solvent supply source 33 sends, for example, an isopropyl alcohol (IPA) solution as a solvent (organic solvent). The solvent preferably has hydrophilicity. An on-off valve V4 is provided in the solvent supply pipe 31. The on-off valve V4 supplies the solvent and stops the supply thereof.

[0041] Also, the tip of an inert gas supply pipe 35 is connected to each of the mist nozzles 29, 30 (solvent supply section 19). Similarly, for example, when the solvent supply section 19 includes six mist nozzles 29, 30, the tip of the inert gas supply pipe 35 branches into six. For example, the six tips of the inert gas supply pipe 35 are respectively connected to the six mist nozzles 29, 30. The base end of the inert gas supply pipe 35 is connected to a second inert gas supply source 37. The second inert gas supply source 37 sends, for example, nitrogen gas as an inert gas. An on-off valve V5 is provided in the inert gas supply pipe 35. The on-off valve V5 supplies the inert gas and stops the supply thereof.

[0042] Also, the substrate processing apparatus 1 includes a vacuum pump 43. An exhaust port 39 is provided in the side wall of the chamber 3. The exhaust port 39 is disposed below a shield plate 49 described later. An exhaust pipe 41 is connected to the exhaust port 39. An on-off valve V6 and a vacuum pump 43 are provided in the exhaust pipe 41 in order from the exhaust port 39 side. The vacuum pump 43 evacuates the gas in the chamber 3 to reduce the pressure in the chamber 3.

[0043] Also, a discharge port 45 is provided in the bottom wall of the chamber 3. A discharge pipe 47 is connected to the discharge port 45. An on-off valve V7 is provided in the discharge pipe 47. When the on-off valve V7 is opened, liquids such as the processing liquid stored at the bottom of the chamber 3 are discharged through the discharge port 45 and the discharge pipe 47. When the on-off valve V7 is closed, the liquids such as the processing liquid are not discharged from the chamber 3.

[0044] In addition, the chamber 3 is provided with a shield plate 49. The shield plate 49 partitions the upper space and the lower space in the chamber 3. It is provided slightly below the upper edge (or the opening 2A) of the processing tank 2. The shield plate 49 is formed so as to surround the processing tank 2. There are gaps between the shield plate 49 and the outer wall of the processing tank 2, and between the shield plate 49 and the inner wall of the chamber 3. Through these gaps, the processing liquid, gas, and mist-like solvent flow.

[0045] The substrate processing apparatus 1 includes a control unit 61 and a storage unit (not shown). The control unit 61 controls each component of the substrate processing apparatus 1. The control unit 61 includes one or more processors such as a central processing unit (CPU). The storage unit includes at least one of, for example, a ROM (Read-Only Memory), a RAM (Random-Access Memory), and a hard disk. The storage unit stores computer programs necessary for controlling each component of the substrate processing apparatus 1.

[0046] For example, the control unit 61 raises and lowers a plurality of substrates W on the lifter 4, or evacuates the inside of the chamber 3 with the vacuum pump 43. Also, the control unit 61 discharges the processing liquid from the processing tank 2 to the bottom inside the chamber 3 by opening the QDR valve 11. Further, the control unit 61 operates the on-off valves V4 and V5 to supply a mist-like solvent from the solvent supply unit 19, or operates the on-off valve V3 to supply a water repellent vapor into the chamber 3 from the water repellent vapor nozzle 17.

[0047] (2) Operation of the substrate processing apparatus 1 Next, the operation of the substrate processing apparatus 1 will be described with reference to FIGS. 3 and 4. In FIG. 3, the illustration of the lifter 4 is omitted. Also, in FIG. 3, the exhaust operation by the vacuum pump 43 etc. is indicated by the symbol VAC. In FIG. 4, the symbol CL indicates the closed state of the on-off valves V2 etc., and the symbol OP indicates the open state of the on-off valves V2 etc. Also, a plurality of substrates W will be described as "substrate W" as appropriate below.

[0048] [Step S01] First Immersion Treatment (Loading of Substrate into Chamber) Pure water is stored in the treatment tank 2 as the treatment liquid. The pure water is supplied from the ejection pipe 5. The lifter 4 receives a plurality of substrates W from a transfer robot (not shown) at the transfer position H1 with the holding part 4A. The lifter 4 lowers the substrate W from the transfer position H1 to the lower position H3 in the treatment tank 2. That is, the entire substrate W is immersed in the pure water in the treatment tank 2. By immersing the substrate W in the pure water, the substrate W is cleaned and drying is prevented. Thereafter, the opening 3A of the chamber 3 is closed by the upper cover 13.

[0049] [Step S02] Exhaust in Chamber Thereafter, the on-off valve V2 is opened and nitrogen gas is supplied into the chamber 3 from the inert gas nozzle 15. Also, when the substrate W is immersed in the treatment liquid, the vacuum pump 43 decompresses the chamber 3. That is, by opening the on-off valve V6 while operating the vacuum pump 43, the gas in the chamber 3 is exhausted through the exhaust port 39 and the exhaust pipe 41. As a result, the chamber 3 is in a decompressed state (negative pressure state) where the pressure is lower than the atmospheric pressure.

[0050] The vacuum pump 43 is operated during steps S02 to S08. Similarly, the on-off valve V6 is opened during steps S02 to S08. Note that the chamber 3 is in a decompressed state during steps S02 to S08 and step S13.

[0051] [Step S03] Supply of First IPA (Formation of Mist-like IPA Atmosphere) Thereafter, by closing the on-off valve V2, the supply of nitrogen gas from the inert gas nozzle 15 is stopped. Also, while decompressing the chamber 3 when the substrate W is immersed in the treatment liquid, mist-like IPA is supplied from the solvent supply unit 19 (solvent supply operation). That is, the on-off valves V4 and V5 are opened and mist-like IPA is supplied into the chamber 3 from the solvent supply unit 19. As a result, the chamber 3 is filled with a mist-like IPA atmosphere. Note that the on-off valves V4 and V5 are opened during steps S03 to S06.

[0052] In addition, mist-like IPA can be contained in the pure water in the treatment tank 2. Therefore, it can be said that it becomes an IPA solution diluted with the pure water in the treatment tank 2. As a result, in step S04 described later, when the substrate W is taken out from the pure water containing IPA in the treatment tank 2, it is possible to promote the replacement of the pure water adhering to the substrate W with the IPA solution.

[0053] 〔Step S04〕Supply of the first IPA (IPA replacement) Thereafter, when the inside of the chamber 3 is depressurized and mist-like IPA is being supplied (solvent supply state), the lifter 4 takes out the substrate W from the pure water in the treatment tank 2. Specifically described. The depressurization inside the chamber 3 and the supply of mist-like IPA from the solvent supply unit 19 are continued. In such a state, the lifter 4 pulls up the substrate W from the pure water in the treatment tank 2. That is, the lifter 4 raises the substrate W from the lower position H3 to the upper position H2.

[0054] When the substrate W is exposed to the mist-like IPA, the replacement process in which the pure water adhering to the substrate W is replaced with IPA proceeds. In step S04, the vacuum pump 43 may be stopped and the on-off valve V6 may be closed. In this case, the depressurized state is maintained.

[0055] 〔Step S05〕Supply of the first IPA (discharge of pure water from the treatment tank) Thereafter, by opening the QDR valve 11, pure water is discharged from the treatment tank 2. Specifically described. After performing step S04, the inside of the chamber 3 is depressurized and the state of supplying mist-like IPA (solvent supply state) is continued. In such a state, by opening the QDR valve 11, pure water is rapidly discharged from the treatment tank 2 to the bottom surface inside the chamber 3. After the inside of the treatment tank 2 becomes empty, the QDR valve 11 is closed.

[0056] 〔Step S06〕Supply of the first IPA (substrate lifting and lowering operation) After that, in the solvent supply state, the lifter 4 lowers the substrate W to the lower position H3 in the processing tank 2 where pure water is not stored, and then performs a substrate lifting and lowering operation to lift the substrate W. This will be specifically described. FIG. 5 is a timing chart for explaining three substrate lifting and lowering operations in the solvent supply state.

[0057] In step S06, three substrate lifting and lowering operations are performed. In FIG. 5, the first substrate lifting and lowering operation is performed between time points t1 and t5. The second substrate lifting and lowering operation is performed between time points t5 and t9. The third substrate lifting and lowering operation is performed between time points t9 and t13. By performing the substrate lifting and lowering operation, uneven adhesion of mist-like IPA is suppressed, and IPA can be uniformly adhered to the substrate W. The three substrate lifting and lowering operations perform the same operation. Therefore, the first substrate lifting and lowering operation will be described as a representative.

[0058] Before time point t1 in FIG. 5, step S05 is performed. At time points t1 to t2, the lifter 4 lowers the substrate W to the lower position H3 in the processing tank 2. Then, at time points t2 to t3, the lifter 4 waits with the substrate W at the lower position H3 for a preset lower standby time LT. Then, at time points t3 to t4, the lifter 4 raises the substrate W to the upper position H2 above the processing tank 2 inside the chamber 3. Then, at time points t4 to t5, the lifter 4 waits with the substrate W at the upper position H2 where the substrate W has been raised for a preset upper standby time UT. Also, in this substrate lifting and lowering operation, the lower standby time LT is set to be longer than the upper standby time UT.

[0059] IPA adheres more easily to the substrate W when the lower standby time LT is longer than the upper standby time UT. Therefore, it is possible to prevent the replacement treatment with IPA from being insufficient and pure water remaining on the substrate W. In the next step S07, water repellent vapor is supplied. Here, the pure water remaining on the substrate W hinders the adhesion of the water repellent to the substrate W. By performing the replacement treatment with IPA sufficiently, this can be prevented.

[0060] Thereafter, at time points t5 to t13, the second and third substrate lifting and lowering operations are performed. Thereafter, at time point t13, the supply operation of the water repellent vapor in the next step S07 is started. For example, the descent time (descent speed) from time points t1 to t2 is shorter (faster) than the ascent time (ascent speed) from time points t3 to t4. In this regard, the descent time may be the same as the ascent time, or may be longer than the ascent time.

[0061] Note that in step S06, three substrate lifting and lowering operations are performed. In this regard, one substrate lifting and lowering operation may be performed. Also, two or four or more substrate lifting and lowering operations may be performed. That is, in step S06, one or a plurality of substrate lifting and lowering operations may be performed. In FIG. 5, reference numeral MD indicates a height position intermediate between the upper position H2 and the lower position H3. The solvent supply unit 19 may be disposed at the height position MD or in the vicinity thereof.

[0062] 〔Step S07〕Supply of water repellent vapor Thereafter, the exhaust in the chamber 3 is continued. Also, by closing the on-off valves V4 and V5, the supply of mist-like IPA from the solvent supply unit 19 is stopped. Thereafter, by opening the on-off valve V3, water repellent vapor is supplied into the chamber 3 from the water repellent vapor nozzles 17. At this time, the lifter 4 raises and lowers the substrate W so as to pass the substrate W between the two water repellent vapor nozzles 17. Thereby, the water repellent vapor is uniformly supplied to the entire substrate W. The supply of the water repellent vapor replaces the IPA adhering to the substrate W with the water repellent. The water repellent modifies the surface of the substrate W to be water repellent. In steps S04 to S06, by sufficiently performing the substitution treatment with IPA, the water repellent treatment can be sufficiently performed, thereby favorably preventing pattern collapse.

[0063] 〔Step S08〕Supply of the second IPA After stopping the supply of the water-repellent agent vapor, the mist-like solvent is supplied from the solvent supply unit 19 (second solvent supply operation). This operation will be specifically described. After step S07, the exhaust in the chamber 3 continues. By closing the on-off valve V3, the supply of the water-repellent agent vapor from the water-repellent agent vapor nozzle 17 is stopped. Also, by opening the on-off valves V4 and V5, the mist-like IPA is supplied from the solvent supply unit 19. Thereby, the water-repellent agent adhering to the substrate W is replaced with IPA. That is, the water-repellent agent adhering to the substrate W is washed away by the IPA. Also, the particles derived from the water-repellent agent adhering to the substrate W are washed away by the IPA. These particles are generated, for example, when moisture and the water-repellent agent come into direct contact with each other.

[0064] 〔Step S09〕Discharge of pure water to the outside of the chamber Thereafter, the vacuum pump 43 is stopped and the on-off valve V6 is closed. Thereby, the exhaust in the chamber 3 is stopped. By closing the on-off valves V4 and V5, the supply of the mist-like IPA from the solvent supply unit 19 is stopped. Also, by opening the on-off valve V2, nitrogen gas is supplied into the chamber 3 from the inert gas nozzle 15. Thereby, the inside of the chamber 3 is returned from the reduced pressure state to the atmospheric pressure. Thereafter, by opening the on-off valve V7, the pure water stored at the bottom of the chamber 3 is discharged to the outside of the chamber 3 through the discharge port 45 and the discharge pipe 47. When all the pure water is discharged from the bottom of the chamber 3 (after the inside of the chamber 3 becomes empty), the on-off valve V7 is closed. Note that nitrogen gas is supplied during steps S09 to S11.

[0065] 〔Step S10〕Cleaning of the treatment tank (supply of cleaning liquid) Thereafter, the supply of nitrogen gas from the inert gas nozzle 15 continues. In such a state, by opening the on-off valve V1, pure water is supplied as a cleaning liquid into the treatment tank 2 from the ejection pipe 5. The inside of the treatment tank 2 is cleaned by the pure water stored in the treatment tank 2. When storing pure water in the treatment tank 2, the pure water supplied into the treatment tank 2 from the ejection pipe 5 may be made to overflow from the treatment tank 2.

[0066] 〔Step S11〕Cleaning of the treatment tank (discharge of cleaning liquid) Thereafter, the supply of nitrogen gas from the inert gas nozzle 15 is continued. In such a state, by closing the on-off valve V1, the supply of pure water from the ejection pipe 5 is stopped. Also, by opening the QDR valve 11, pure water is rapidly discharged from the bottom surface of the chamber 3 into the processing tank 2. Further, by opening the on-off valve V7, the pure water (cleaning liquid) stored at the bottom of the chamber 3 is discharged. After the inside of the processing tank 2 becomes empty, the QDR valve 11 is closed. Also, after the inside of the chamber 3 becomes empty, the on-off valve V7 is closed.

[0067] 〔Step S12〕Second immersion treatment Thereafter, the supply of nitrogen gas from the inert gas nozzle 15 is continued. In such a state, by opening the on-off valve V1, pure water is supplied from the ejection pipe 5 into the processing tank 2. When a preset amount of pure water is stored in the processing tank 2, the lifter 4 lowers the substrate W from the upper position H2 to the lower position H3. Then, the substrate W is immersed in the pure water in the processing tank 2 for a preset period. Thereby, a cleaning process is performed to further remove particles and the like adhering to the substrate W.

[0068] 〔Step S13〕Supply of the third (final) IPA (drying process) Thereafter, by closing the on-off valve V1, the supply of pure water from the ejection pipe 5 is stopped. Thereafter, while operating the vacuum pump 43, by opening the on-off valve V6, the gas in the chamber 3 is exhausted. As a result, the inside of the chamber 3 becomes a reduced pressure state. Thereafter, by opening the on-off valves V4 and V5, mist-like IPA is supplied from the solvent supply unit 19. Thereafter, after the inside of the chamber 3 becomes an atmosphere of mist-like IPA, the lifter 4 pulls up the substrate W from the pure water in the processing tank 2. That is, the lifter 4 raises the substrate W from the lower position H3 to the upper position H2. When the substrate W is exposed to the mist-like IPA, the pure water adhering to the substrate W is replaced with IPA.

[0069] With the evacuation in the chamber 3 by the vacuum pump 43 etc. being continued, by closing the on-off valves V4 and V5, the supply of mist-like IPA from the solvent supply unit 19 is stopped. Since the supply of mist-like IPA is stopped and the inside of the chamber 3 is under reduced pressure, the IPA adhering to the substrate W volatilizes actively and the substrate W is dried. In the drying process, after stopping the supply of mist-like IPA, nitrogen gas may be supplied from the inert gas nozzle 15.

[0070] 〔Step S14〕Supply of nitrogen gas Stop the vacuum pump 43 and close the on-off valve V6. Also, open the on-off valve V2 and supply nitrogen gas from the inert gas nozzle 15. Thereby, the inside of the chamber 3 is returned from the reduced pressure state to the atmospheric pressure. Thereafter, by opening the QDR valve 11 and the on-off valve V7, pure water is discharged from the inside of the processing tank 2 and pure water is discharged from the bottom of the chamber 3.

[0071] 〔Step S15〕Carrying out of the substrate from the chamber By opening the upper cover 13, the opening 3A is released. The lifter 4 raises the substrate W held by the holding portion 4A from the upper position H2 to the delivery position H1. The substrate W raised to the delivery position H1 is moved to the next destination by a transfer robot (not shown).

[0072] According to the present embodiment, a mist-like solvent (for example, IPA) is supplied from the solvent supply unit 19. Thereby, after taking out the substrate W from the processing liquid (for example, pure water) stored in the processing tank 2, it is possible to make the solvent more likely to adhere to the substrate W than the solvent vapor. Therefore, the solvent can be efficiently adhered to the substrate W.

[0073] For example, when supplying a mist-like solvent, the substrate W is raised and lowered to suppress uneven adhesion of the solvent. At this time, the lower standby time LT for waiting for the substrate W at the lower position H3 in the processing tank 2 is made longer than the upper standby time UT for waiting for the substrate W at the upper position H2 where the substrate W is raised. This is because, for example, when supplying a mist-like solvent, the amount of the solvent adhering to the substrate W is larger when the substrate W is placed at the lower position H3 in the processing tank 2 than when it is placed at the upper position H2 above the processing tank 2 in the chamber 3. Thereby, the solvent can be adhered to the substrate W more efficiently. That is, the consumption amount of the solvent can be reduced and the processing time can be shortened.

[0074] Here, the effect is supplemented by the experimental results. FIG. 6(a) is a diagram of experimental results comparing the amount of IPA adhering to the substrate W under four conditions when supplying mist-like IPA. FIG. 6(b) is a diagram showing a state where the substrate W is arranged at the upper position H2 above the processing tank 2. FIG. 6(c) is a diagram showing a state where the substrate W is arranged at the lower position H3 in the processing tank 2. In FIGS. 6(b) and 6(c), the illustration of the lifter 4 is omitted. Note that in FIG. 6(a), the same IPA processing time means the same IPA supply amount.

[0075] In FIG. 6(a), the black triangle mark is the result when supplying mist-like IPA from the solvent supply unit 19 when one substrate W is arranged at the lower position H3 in the processing tank 2 shown in FIG. 6(c). Also, the white triangle mark is the result when supplying mist-like IPA from the solvent supply unit 19 when one substrate W is arranged at the upper position H2 above the processing tank 2 shown in FIG. 6(b). Comparing the two, it can be seen that the black triangle mark (lower position H3 in the processing tank 2) has a larger amount of IPA adhesion.

[0076] In addition, in FIG. 6(a), the black circular marks are the results when mist-like IPA is supplied from the solvent supply unit 19 when 50 substrates W are arranged at the lower position H3 in the processing tank 2 shown in FIG. 6(c). The white circular marks are the results when mist-like IPA is supplied from the solvent supply unit 19 when 50 substrates W are arranged at the upper position H2 above the processing tank 2 shown in FIG. 6(b). Comparing the two, it can be seen that, similarly, the black circular marks (lower position H3 in the processing tank 2) have a larger amount of IPA adhesion.

[0077] Thus, it is considered that the reason why the amount of IPA adhesion is larger when the substrate W is arranged at the lower position H3 in the processing tank 2 is that the mist-like IPA tends to remain in the processing tank 2.

[0078] Returning to the description of the effects of this embodiment. The substrate lifting and lowering operation is performed a plurality of times (for example, 3 times). The more the substrate lifting and lowering operation is repeated, the more uneven adhesion of the solvent can be suppressed.

[0079] In addition, in step S07, the control unit 61 causes the water repellent agent vapor to be supplied to the substrate W from the two water repellent agent vapor nozzles 17. In this regard, there are the following effects. Since the mist-like solvent is supplied from the solvent supply unit 19, it is possible to easily adhere the solvent to the substrate W. Therefore, it is possible to prevent the substitution treatment with the solvent from being insufficient and the processing liquid from remaining on the substrate W. In addition, the processing liquid remaining on the substrate W hinders the adhesion of the water repellent agent to the substrate W. By being able to sufficiently perform the substitution treatment with the solvent, the water repellent treatment with the water repellent agent can be performed well.

Example 2

[0080] Next, Example 2 of the present invention will be described with reference to the drawings. Note that descriptions overlapping with those of Example 1 are omitted. FIG. 7 is a diagram for explaining step S08A according to Example 2. FIGS. 8(a) and 8(b) are diagrams for explaining the operation of the substrate processing apparatus 1 according to Example 2.

[0081] In Example 1, after replacing IPA adhering to substrate W with a water repellent by water repellent vapor, the water repellent was washed away with mist-like IPA. At this time, mist-like IPA was supplied in a state where substrate W was located at the upper position H2. In this regard, mist-like IPA may be supplied in a state where substrate W is located at the lower position H3 of processing tank 2 in which no processing liquid (for example, pure water) is stored. That is, instead of step S08 shown in FIG. 3, step S08A shown in FIG. 7 is executed.

[0082] 〔Step S08A〕Supply of Second IPA (Second Solvent Supply Operation) Referring to FIG. 7. After stopping the supply of water repellent vapor, the inside of chamber 3 is depressurized by vacuum pump 43, and mist-like solvent is supplied from solvent supply unit 19 (second solvent supply operation). This operation will be specifically described. After step S07, the exhaust inside chamber 3 continues. By closing on-off valve V3, the supply of water repellent vapor from water repellent vapor nozzle 17 is stopped.

[0083] Thereafter, by opening on-off valves V4 and V5, mist-like IPA is supplied from solvent supply unit 19. Also, lifter 4 lowers substrate W from the upper position H2 to the lower position H3. That is, when lifter 4 has standby (positioned) substrate W at the lower position H3 inside processing tank 2 in which no processing liquid (for example, pure water) is stored, mist-like solvent is supplied from solvent supply unit 19 (that is, the second solvent supply operation is performed). Since mist-like IPA is supplied when substrate W is on standby at the lower position H3, the amount of IPA adhering to substrate W can be increased.

[0084] As shown in FIG. 8(a), by opening on-off valves V4 and V5, mist-like IPA can be supplied from solvent supply unit 19, and at the same time, lifter 4 can lower substrate W from the upper position H2 to the lower position H3. Also, after supplying mist-like IPA from solvent supply unit 19 by opening on-off valves V4 and V5, lifter 4 may lower substrate W to the lower position H3 (refer to the dashed-dotted line indicated by symbol DL in FIG. 8(a)).

[0085] Also, as shown in FIG. 8(b), while the lifter 4 is lowering the substrate W toward the lower position H3, by opening the on-off valves V4 and V5, mist-like IPA may be supplied from the solvent supply unit 19. In this case, when the water repellent agent vapor is being supplied from the water repellent agent vapor nozzle 17, the lowering of the substrate W toward the lower position H3 is started. Further, after the lifter 4 has lowered the substrate W to the lower position H3, that is, when the substrate W is located at the lower position H3, the supply of mist-like IPA from the solvent supply unit 19 may be started.

[0086] Note that, as shown in FIGS. 8(a) and 8(b), in step S09, the lifter 4 may be raised from the lower position H3 to the upper position H2.

[0087] According to the present embodiment, after stopping the supply of the water repellent agent vapor, the control unit 61 performs a second solvent supply operation of depressurizing the inside of the chamber 3 with the vacuum pump 43 and supplying mist-like solvent from the solvent supply unit 19. Thereby, the water repellent agent and particles derived from the water repellent agent can be washed away. Further, the second solvent supply operation is performed when the lifter 4 has the substrate W waiting at the lower position H3 in the processing tank 2 where the processing liquid is not stored. When washing away the water repellent agent or the like, the amount of the solvent adhering to the substrate W can be increased. Therefore, the solvent can be efficiently adhered to the substrate. Also, as shown in FIG. 5, the processing time can be shortened as compared with the case of performing a plurality of substrate lifting and lowering operations.

Example 3

[0088] Next, Example 3 of the present invention will be described with reference to the drawings. Note that descriptions overlapping with those of Examples 1 and 2 are omitted. FIG. 9 is a longitudinal sectional view showing a schematic configuration of a substrate processing apparatus according to Example 3.

[0089] In Example 1, the mist nozzles 29 and 30 of the two solvent supply units 19 supplied mist-like solvent (for example, IPA). In this regard, in Example 3, the mist nozzles 29 and 30 may supply mist-like water repellent agent.

[0090] Refer to FIG. 9. The substrate processing apparatus 1 does not include the two water repellent vapor nozzles 17 shown in FIG. 1. Therefore, the tip of the supply pipe 25 is connected to the solvent supply pipe 31 between the mist nozzles 29, 30 and the on-off valve V4. Specifically, the tip of the supply pipe 25 is connected to the solvent supply pipe 31 between the branch pipe 65 and the on-off valve V4 shown in FIG. 2. The branch pipe 65 is a member that divides into the mist nozzle 29 side and the mist nozzle 30 side.

[0091] The base end of the supply pipe 25 is connected to the water repellent supply source 27A. The water repellent supply source 27A sends the liquid of the water repellent to the supply pipe 25. The on-off valve V3 is provided in the supply pipe 25. Note that heaters HT1, HT2 may be provided between the on-off valve V4 and the solvent supply source 33 and between the on-off valve V3 and the water repellent supply source 27A, respectively. For example, the heater HT2 heats the liquid of the water repellent passing through the supply pipe 25 from the outside of the supply pipe 25 to a preset temperature. Similarly, the heater HT1 heats the solvent to a preset temperature.

[0092] With such a configuration, the two solvent supply units (two nozzle rows) 19 can selectively supply mist-like solvent (e.g., IPA) and mist-like water repellent into the chamber 3.

[0093] The operation of the substrate processing apparatus 1 of this embodiment will be briefly described. In step S07 shown in FIG. 3, the exhaust in the chamber 3 is being continued. By closing the on-off valves V4, V5, the supply of mist-like IPA from the two solvent supply units 19 is stopped. Then, by opening the on-off valves V3, V5, mist-like water repellent is supplied from the two solvent supply units 19 into the chamber 3. At this time, the lifter 4 raises and lowers the substrate W so that the substrate W passes between the two solvent supply units 19. The supply of the water repellent vapor replaces the IPA adhering to the substrate W with the water repellent.

[0094] Also, the operation of raising and lowering the substrate W may be performed in the same manner as the substrate raising and lowering operation at times t1 to t5 shown in FIG. 5, for example. That is, the operation of raising and lowering the substrate W is to lower the substrate W to the lower position H3 in the processing tank 2 by the lifter 4 when the mist-like water repellent is being supplied, wait for the preset lower standby time LT with the substrate W held at the lower position H3 by the lifter 4, then raise the substrate W by the lifter 4, and wait for the preset upper standby time UT with the substrate W held at the upper position H2 where the substrate W has been raised by the lifter 4. Also, the lower standby time LT is set to be longer than the upper standby time UT. When stopping the supply of the mist-like water repellent, close the on-off valves V3 and V5.

[0095] According to this embodiment, since the mist-like water repellent is supplied, it is possible to make the water repellent more likely to adhere to the substrate W than the solvent vapor. Therefore, the water repellent can be efficiently adhered to the substrate W. Also, when raising and lowering the substrate W while supplying the mist-like water repellent, the lower standby time LT is made longer than the upper standby time UT. Thereby, more water repellent can be adhered to the substrate W.

[0096] Also, the solvent and the water repellent can be selectively ejected from the mist nozzles 29 and 30 of the solvent supply unit 19. For example, as shown in FIG. 1, assume that the two solvent supply units 19 and the two water repellent vapor nozzles 17 are arranged at different heights. If the substrate W is passed between the two solvent supply units 19 during the ejection of the solvent and the substrate W is passed between the two water repellent vapor nozzles 17 during the ejection of the water repellent, the distance that the substrate W moves up and down may become longer. Therefore, the height of the chamber 3 may become longer. However, according to this embodiment, the height of the chamber 3 can be suppressed.

[0097] The present invention is not limited to the above-described embodiment and can be modified as follows.

[0098] (1) In step S08 of the above-described Example 1, when mist-like IPA is being supplied (second solvent supply operation), the substrate W is located at the upper position H2 and the substrate W does not move up and down. In this regard, when mist-like IPA is being supplied, the lifter 4 may lower the substrate W to the lower position H3 and then raise the substrate W (second substrate lifting operation).

[0099] Also, the second substrate lifting operation in step S08 of this modified example may be performed in the same manner as the substrate lifting operation at times t1 to t5 shown in FIG. 5, for example. That is, in the second substrate lifting operation, when mist-like IPA is being supplied, the lifter 4 lowers the substrate W to the lower position H3 in the processing tank 2, waits the substrate W at the lower position H3 for a preset lower standby time LT, then raises the substrate W by the lifter 4, and waits the substrate W at the upper position H2 where the substrate W has been raised for a preset upper standby time UT by the lifter 4. Also, the lower standby time LT is set to be longer than the upper standby time UT.

[0100] For example, when supplying a mist-like solvent, the substrate W is lifted and lowered to suppress uneven adhesion of the solvent. At this time, the lower standby time LT for waiting the substrate W at the lower position H3 in the processing tank 2 is made longer than the upper standby time UT for waiting the substrate W at the upper position H2 where the substrate W has been raised. This is because, for example, when supplying a mist-like solvent, the amount of the solvent adhering to the substrate W is larger when the substrate W is arranged at the lower position H3 in the processing tank 2 than when the substrate W is arranged at the upper position H2 above the processing tank 2 in the chamber 3. Thereby, the solvent can be adhered to the substrate W more efficiently. That is, the consumption amount of the solvent can be reduced and the processing time can be shortened. Note that the lower standby time LT in step S08 corresponds to the second lower standby time of the present invention. The upper standby time UT in step S08 corresponds to the second upper standby time of the present invention.

[0101] (2) In step S13 of each of the above-described embodiments and modification examples (1), when mist-like IPA is being supplied, the substrate W is located at the upper position H2 and the substrate W does not move up and down. In this regard, step S13 may be operated as steps S03 to S06 shown in FIGS. 3 and 5. At this time, the substrate lifting operation may be performed one or more times.

[0102] (3) In each of the above-described embodiments and modification examples, the two solvent supply units 19 shown in FIG. 2 are provided with mist nozzles 29, 30. In this regard, the two solvent supply units 19 may be provided with a plurality of shower heads (shower nozzles) that supply droplet-like solvents (for example, IPA) instead of the mist nozzles 29, 30. Each shower head discharges droplets instead of discharging a linearly continuous solvent. A shower head is also called a one-fluid nozzle. Each solvent supply unit 19 may be configured to supply at least one of mist-like and droplet-like solvents.

[0103] (4) In each of the above-described embodiments and modification examples (1) and (2), the mist nozzles 29, 30 of the two solvent supply units 19 are constituted by two-fluid nozzles. In this regard, the mist nozzles 29, 30 may be constituted by one-fluid nozzles. A one-fluid nozzle is a nozzle that makes a liquid into a mist state using the pressure of the liquid without using gas.

[0104] (5) In each of the above-described embodiments and modification examples, in the three substrate lifting operations of FIG. 5, after the substrate W is lifted to the upper position H2, the substrate W is made to standby at the upper position H2. The height position at which the substrate W is made to standby on the upper side does not have to coincide with the upper position H2. The position at which the substrate W is made to standby on the upper side may be, for example, a position H2A near the upper position H2 as shown in FIG. 5. Also, the position at which the substrate W is made to standby on the upper side may be a height position such that the lower end of the substrate W fits into the processing tank 2. Note that the upper position H2 or the position H2A corresponds to the position where the substrate of the present invention is lifted.

[0105] (6) In each of the above-described embodiments and each modification, in the three substrate lifting and lowering operations of FIG. 5, after the substrate W was lifted to the lower position H3, the substrate W was made to wait at the lower position H3. The height position at which the substrate W waits on the lower side does not have to coincide with the lower position H3. The position at which the substrate W waits on the lower side may be, for example, a position H3A near the position H3 as shown in FIG. 5. Note that the lower position H3 or the position H3A corresponds to the position in the processing tank of the present invention.

[0106] (7) In each of the above-described embodiments and each modification, the substrate processing apparatus 1 includes a QDR valve 11 that discharges a processing liquid (for example, pure water) from the processing tank 2. In this regard, the substrate processing apparatus 1 may include a discharge pipe extending from the processing tank 2 to the outside of the chamber 3 and an on-off valve provided in the discharge pipe. By opening this on-off valve, the processing liquid may be directly discharged from the processing tank 2 to the outside of the chamber 3 without being stored at the bottom in the chamber.

[0107] (8) In each of the above-described embodiments and each modification, in step S06, the QDR valve 11 was closed. In this regard, if a relationship holds such that the amount of IPA adhering to the substrate W is larger when the substrate W is disposed at the lower position H3 than when the substrate W is disposed at the upper position H2, the QDR valve 11 may be open.

[0108] (9) In the above-described embodiments 1, 2 and each modification, the two water repellent agent vapor nozzles 17 supplied water repellent agent vapor into the chamber 3. Instead of the two water repellent agent vapor nozzles 17, two nozzle arrays may be provided. Each of the two nozzle arrays includes a plurality of mist nozzles arranged in the Y direction. The mist nozzles of the two nozzle arrays supply mist-like water repellent agent into the chamber 3.

Explanation of reference numerals

[0109] 1... Substrate processing apparatus 2... Processing tank 2A... Opening 3... Chamber 4... Lifter 11... QDR valve 17... Water repellent agent vapor nozzle 43... Vacuum pump 61... Control unit H2... Upper position H3... Lower position V1~V7... On-off valve

Claims

1. In a substrate processing apparatus for processing a substrate, a processing tank for storing a processing liquid; a chamber for housing the processing tank; a vacuum pump for reducing the pressure inside the chamber; a lifter for raising and lowering the substrate inside the chamber while holding the substrate; an on-off valve for discharging the processing liquid from the processing tank; a solvent supply unit provided inside the chamber, disposed at a position higher than an opening formed on the upper surface of the processing tank, and supplying at least one of mist-shaped and droplet-shaped solvents from the outside of the processing tank toward the inside of the processing tank in a plan view; a control unit, and comprising: When the substrate is immersed in the processing liquid, the control unit performs a solvent supply operation of reducing the pressure inside the chamber by the vacuum pump and supplying at least one of the mist-shaped and droplet-shaped solvents from the solvent supply unit. When in a solvent supply state where the pressure inside the chamber is reduced and the solvent is supplied, the control unit causes the lifter to take out the substrate from the processing liquid in the processing tank, and then discharges the processing liquid from the processing tank by opening the on-off valve. When in the solvent supply state, the control unit performs a substrate lifting and lowering operation of lowering the substrate by the lifter to a position inside the processing tank where the processing liquid is not stored, waiting the substrate by the lifter at the position inside the processing tank for a preset lower standby time, then raising the substrate by the lifter, and waiting the substrate by the lifter at the position where the substrate is raised for a preset upper standby time. The substrate processing apparatus, wherein the lower standby time is longer than the upper standby time.

2. In the substrate processing apparatus according to Claim 1, the substrate lifting and lowering operation is performed a plurality of times.

3. In a substrate processing apparatus for processing a substrate, a processing tank for storing a processing liquid; a chamber for housing the processing tank; a vacuum pump for reducing the pressure inside the chamber; a lifter for raising and lowering the substrate inside the chamber while holding the substrate; an on-off valve for discharging the processing liquid from the processing tank; a solvent supply unit provided inside the chamber, disposed at a position higher than an opening formed on the upper surface of the processing tank, and supplying at least one of mist-shaped and droplet-shaped solvents from the outside of the processing tank toward the inside of the processing tank in a plan view; a water repellent agent nozzle for supplying water repellent agent vapor inside the chamber A control unit, and when the substrate is immersed in the processing liquid, the control unit performs a solvent supply operation of reducing the pressure in the chamber by the vacuum pump and supplying at least one of the mist-shaped and droplet-shaped solvents from the solvent supply unit. When the chamber is in a reduced pressure state and the solvent is being supplied, the control unit causes the lifter to take out the substrate from the processing liquid in the processing tank, and then discharges the processing liquid from the processing tank by opening the on-off valve. When in the solvent supply state, the control unit performs a substrate lifting and lowering operation of lowering the substrate by the lifter to a position in the processing tank where the processing liquid is not stored, and then raising the substrate by the lifter. A substrate processing apparatus, wherein after performing the substrate lifting and lowering operation and after stopping the supply of the solvent, the control unit supplies the water repellent agent vapor from the water repellent agent nozzle to the substrate.

4. In the substrate processing apparatus according to claim 3, after stopping the supply of the water repellent agent vapor, the control unit performs a second solvent supply operation of reducing the pressure in the chamber by the vacuum pump and supplying at least one of the mist-shaped and droplet-shaped solvents from the solvent supply unit. A substrate processing apparatus characterized by that.

5. In the substrate processing apparatus according to claim 4, The second solvent supply operation is performed when the lifter is waiting with the substrate at a position in the processing tank where the processing liquid is not stored. A substrate processing apparatus characterized by that.

6. In the substrate processing apparatus according to claim 4, when the second solvent supply operation is being performed, the control unit lowers the substrate to a position in the processing tank by the lifter, waits with the substrate at the position in the processing tank for a preset second lower waiting time, and then raises the substrate by the lifter. Wait with the substrate at the raised position for a preset second upper waiting time. A substrate processing apparatus, wherein the second lower waiting time is longer than the second upper waiting time.

7. A processing tank for storing a processing liquid, a chamber for housing the processing tank, a vacuum pump for reducing the pressure in the chamber, a lifter for raising and lowering the substrate in the chamber while holding the substrate, an on-off valve for discharging the processing liquid from the processing tank, A substrate processing method for a substrate processing apparatus comprising: A solvent supply step of reducing the pressure in the chamber by the vacuum pump and supplying at least one of a mist-shaped and a droplet-shaped solvent from a solvent supply unit when the substrate is immersed in the processing liquid; A substrate removal step of removing the substrate from the processing liquid in the processing tank by the lifter when the pressure in the chamber is reduced and the solvent is in a solvent supply state where the solvent is supplied; A processing liquid discharge step of discharging the processing liquid from the processing tank by opening the on-off valve when the solvent is in the solvent supply state and after the substrate removal step has been performed; A substrate lifting and lowering step of lowering the substrate by the lifter to a position in the processing tank where the processing liquid is not stored in the solvent supply state, waiting the substrate by the lifter at the position in the processing tank for a preset lower standby time, then raising the substrate by the lifter, and waiting the substrate by the lifter at the position where the substrate has been raised for a preset upper standby time; and The solvent supply unit is provided in the chamber; The solvent supply unit is disposed at a position higher than an opening formed on the upper surface of the processing tank, and supplies at least one of a mist-shaped and a droplet-shaped solvent from the outside of the processing tank toward the inside of the processing tank in a plan view; A substrate processing method, characterized in that the lower standby time is longer than the upper standby time.

Images