Method for manufacturing optoelectronic component, and optoelectronic component

Abstract

A method for producing an optoelectronic component is described, the method comprising the steps of providing a semiconductor layer sequence, applying a matrix material, the matrix material comprising ferromagnetic particles, the matrix material being heatable by inductive heating with the ferromagnetic particles, inductively heating the ferromagnetic particles to at least partially soften the matrix material, and hardening the matrix material to form at least a part of a support with the matrix material. Also described is an optoelectronic component producible by the method described herein.

Description

Technical Field

[0001] A process for manufacturing optoelectronic components is specified. The optoelectronic components are further specified.

[0002] This patent application claims the priority of German Patent Application No. 10 2021 118 151.8, the disclosure content of which is incorporated herein by reference.

Background Art

[0003] One problem to be solved is to specify a manufacturing process for optoelectronic components with reduced damage due to thermal overload. A further problem to be solved is to provide optoelectronic components manufactured by such a process.

Summary of the Invention

[0004] A process for manufacturing optoelectronic components is specified. For example, the optoelectronic component is a radiation-emitting component. However, it is also possible to configure the optoelectronic component to detect electromagnetic radiation. Specifically, the optoelectronic component is a thin-film chip.

[0005] In at least one embodiment, the process includes a step of providing a semiconductor layer stack. Specifically, the semiconductor layer stack has an active region configured to generate or detect electromagnetic radiation. The semiconductor layer stack can also be generated by an epitaxial growth method. In other words, for example, the semiconductor layer stack is an epitaxial semiconductor layer stack.

[0006] In at least one embodiment, the process includes a further step in which a matrix material is applied. The matrix material includes ferromagnetic particles. Further, it is possible to heat the matrix material by induction heating using the ferromagnetic particles. In other words, the matrix material can be indirectly heated by the ferromagnetic particles. The ferromagnetic particles are preferably distributed uniformly throughout the matrix material. That is, the ferromagnetic particles have a uniform concentration throughout the matrix material. The uniform distribution of the ferromagnetic particles throughout the matrix material enables the matrix material to be heated uniformly with certainty. Specifically, the matrix material has electrical insulation.

[0007] In at least one embodiment, in a further step of the process, the ferromagnetic particles are induction heated, whereby the matrix material is at least partially softened. Thus, the ferromagnetic particles transfer the heat energy generated by induction to the matrix material surrounding the ferromagnetic particles. In this way, the matrix material is also heated, and as a result, the matrix material is at least partially softened.

[0008] That is, the viscosity of the matrix material is reduced by indirect heating using ferromagnetic particles.

[0009] When induction heating the ferromagnetic particles, a coil, for example a coil having an iron core, is introduced in the vicinity of the matrix material containing the ferromagnetic particles. An alternating voltage or an alternating current is applied to the coil, whereby an alternating magnetic field is generated in the ferromagnetic particles. The alternating magnetic field in the ferromagnetic particles causes eddy currents, specifically transformer magnetization. This causes heat loss and heating of the ferromagnetic particles.

[0010] In at least one embodiment, in a further step of the process, the matrix material is cured. The cured matrix material here forms at least a part of a support of an optoelectronic component. Specifically, the curing of the matrix material is achieved, for example, by cooling to room temperature.

[0011] In at least one embodiment, a process for manufacturing an optoelectronic component comprises the following steps: - providing a semiconductor layer stack; - applying a matrix material, which contains ferromagnetic particles and is heatable by induction heating using the ferromagnetic particles; - inductively heating the ferromagnetic particles to at least partially soften the matrix material; - curing the matrix material to form at least part of a support with the matrix material; and includes.

[0012] Specifically, the process steps are carried out in the stated order.

[0013] By inductive heating of the ferromagnetic particles, and thus also by inductive heating of the matrix material, it is possible to protect the components of the optoelectronic component from thermal overload during manufacture. This can be explained by the fact that inductive heating selectively heats the ferromagnetic particles. Unlike in the case of conventional heating methods, heat is introduced only at the sites where the ferromagnetic particles are present. Thus, heating the entire optoelectronic component during manufacture is avoided.

[0014] In at least one embodiment, the matrix material is applied as a suspension. For this purpose, for example, the powder of the matrix material is suspended in a solvent. Specifically, water and / or alcohol is used as the solvent. The suspension is applied by a printing method such as bar coating or screen printing. The solvent is preferably removed before inductive heating of the ferromagnetic particles.

[0015] During inductive heating of the ferromagnetic particles, the matrix material softens by heat transfer from the ferromagnetic particles. Thereby, the individual components of the matrix material powder are bonded and a continuous phase is formed. Thus, put another way, inductive heating of the ferromagnetic particles results in the formation of a cohesive layer from the powdered matrix material.

[0016] In at least one embodiment, the matrix material is applied as a ready-made sheet. Thanks to the inductive heating of the ferromagnetic particles, the entire sheet is softened and can thus conform to any possible unevenness. Specifically, the ready-made sheet has a thickness of at least 50 micrometers, preferably at least 100 micrometers, more preferably at least 150 micrometers. The ready-made sheet preferably has a thickness of 100 micrometers or more and 200 micrometers or less.

[0017] In at least one embodiment, the semiconductor layer stack is grown on a growth substrate. The growth substrate is at least partially transmissive, in particular to electromagnetic radiation. For example, the growth substrate includes sapphire, GaAs, or silicon. Specifically, the growth substrate is sapphire. The semiconductor layer stack is preferably epitaxially deposited on the growth substrate. Advantageously, the growth substrate helps to create a semiconductor layer stack with a low defect density.

[0018] In at least one embodiment, after the matrix material has been cured, the growth substrate is at least partially removed. For example, the growth substrate is at least partially removed by a lift-off method, in particular by laser lift-off (LLO). By at least partially removing the growth substrate, advantageously, the electromagnetic radiation generated in the active region of the semiconductor layer stack can be emitted from the optoelectronic component with low or zero radiation loss. In the case of an optoelectronic component configured to detect electromagnetic radiation, the detected electromagnetic radiation can reach the active region with low or zero radiation loss. That is, at least partial removal of the growth substrate prevents the growth substrate from absorbing electromagnetic radiation.

[0019] In at least one embodiment, prior to the application of the matrix material, a connection structure is added to the semiconductor layer stack. Specifically, this connection structure includes a connection layer and connection elements. The connection layer and the connection elements preferably contain metal or are formed from metal. For example, the connection layer contains Ag or is formed from Ag. For example, the connection elements contain Ni or Cu, or are formed from Ni, Cu, or an alloy of Ni and / or Cu. Specifically, the connection elements are produced by electrodeposition. The connection structure preferably serves for electrical contact connection of the semiconductor layer stack.

[0020] In at least one embodiment, following the curing of the matrix material, a part of the matrix material is removed. Specifically, the matrix material is removed by chemical mechanical polishing (abbreviated as CMP). This forms a flat surface of the matrix material and thus also a flat surface of the support. The removal can likewise serve to expose the connection structure. This means that it is preferred that the matrix material is removed such that the connection structure and the matrix material each have a surface on a common plane. That is, the connection structure and the matrix material can terminate in the same plane.

[0021] Specifically, the removal of the matrix material on the surface of the matrix material leaves traces that are exposed in the finished component.

[0022] In at least one embodiment, the matrix material includes an inorganic polymer or an organic polymer. Specifically, the matrix material consists of an inorganic polymer or an organic polymer. For example, the organic polymer is an epoxy resin. Specifically, a filler material is introduced into the organic polymer.

[0023] In at least one embodiment, the matrix material includes glass. Specifically, the matrix material consists of glass. Specifically, the glass is a low melting point glass. Compared with conventional materials of the support, especially organic polymers, the glass can have higher thermal stability. Furthermore, it is worth noting that the glass has low gas permeability and high reliability.

[0024] In at least one embodiment, the process creates clusters of a number of optoelectronic components. In this way, a number of optoelectronic components are advantageously created in an efficient manner.

[0025] In at least one embodiment, following the removal of the matrix material, the singulation of the optoelectronic components created in clusters is performed. For example, the singulation is achieved by a laser scribing method or a mechanical cutting method.

[0026] In at least one embodiment, following the curing of the matrix material, a heat treatment by induction heating of ferromagnetic particles is performed. Since local limited heat input can be achieved by the induction heating of ferromagnetic particles, the heat treatment can be performed at several locations or over the entire matrix material.

[0027] It is understood that the heat treatment means heating the matrix material for a long period, for example up to several days. It is possible to control the mechanical stress in the matrix material to be cured by the heat treatment. When the matrix material is gradually cooled after the heat treatment, it is possible to prevent the internal stress of the matrix material that may adversely affect the optical properties of the matrix material. When the matrix material is quenched after the heat treatment, a compressive stress is generated on the surface of the matrix material. The compressive stress results in a matrix material with low sensitivity to mechanical stress and / or thermal stress.

[0028] Furthermore, an optoelectronic component is identified. The optoelectronic component is preferably manufacturable by the optoelectronic component manufacturing process described herein. Thus, the features and embodiments described in connection with the process are also applicable to the optoelectronic component, and vice versa.

[0029] In at least one embodiment, the optoelectronic component includes a semiconductor layer stack and a support. The semiconductor layer stack is intended to generate or detect electromagnetic radiation. The support has a matrix material containing ferromagnetic particles.

[0030] In at least one embodiment, a connection layer is disposed between the semiconductor layer stack and the support. The connection layer serves, for example, as an electrical contact connection for the semiconductor layer stack. The connection layer preferably contains or consists of a metal. Specifically, the connection layer contains or consists of Ag.

[0031] In at least one embodiment, the connection layer is reflective at at least some locations. The connection layer may also be reflective over its entire area. Specifically, the connection layer has a reflectivity of at least 90%, preferably at least 95%, more preferably at least 99% with respect to the electromagnetic radiation generated in the operation of the optoelectronic component. The connection layer that is reflective at at least some locations can increase the efficiency of the optoelectronic component because the radiation loss is reduced.

[0032] In at least one embodiment, the optoelectronic component has connection elements for the electrical contact connection of the semiconductor layer stack. The optoelectronic component preferably has two connection elements. The connection elements are formed particularly from a metal, for example Ni.

[0033] In at least one embodiment, the connecting element penetrates the matrix material of the support. Such a design of the connecting element enables a simple electrical contact connection of the optoelectronic component. Since the matrix material of the support is particularly electrically insulating, a short circuit of the connecting element can be prevented.

[0034] In at least one embodiment, the connecting element and the support terminate in the same plane on the side remote from the semiconductor layer stack. That is, the connecting element and the support each have a surface on a common plane. By terminating the connecting element and the support in the same plane, it is possible to efficiently attach the optoelectronic component to the parent component. Specifically, it can be seen that the fact that the connecting element and the support terminate in the same plane is advantageous because the flat surface area is maximized and the mechanical connection to the parent component is improved.

[0035] In at least one embodiment, the matrix material comprises or consists of glass. Advantageously, by using glass for the matrix material, the optoelectronic component is effectively protected from external influences and its mechanical stability is increased.

[0036] In at least one embodiment, the glass has a glass transition temperature T of 350 °C or lower, preferably 300 °C or lower. g Thus, specifically, the glass is a low melting point glass. Since the glass transition temperature is low, the processing temperature of the glass can be lowered. This makes it possible to protect further components of the optoelectronic component from thermal overload.

[0037] Specifically, the reflective connection layer of Ag is unstable at high temperatures, for example above 350 °C, and thus the reflective connection layer is at least partially destroyed. This can have an adverse effect on the reflectivity of the layer. Since the glass transition temperature is 350 °C or lower, preferably 300 °C or lower, it is possible to process the glass at a low temperature. This makes it possible to protect the reflective connection layer from destruction. In this way, the reflectivity of the reflective connection layer is maintained.

[0038] In at least one embodiment, the glass is tellurite glass, bismuth glass, vanadate glass, or a mixture of at least two of these glasses. These glasses have a particularly low glass transition temperature and thus excellent suitability for the applications described herein. For example, as the glass, TeO 2 V 2 O 5 is used. Since the glass transition temperature of TeO 2 V 2 O 5 is about 280 °C, it can be processed at a temperature of 300 °C.

[0039] In at least one embodiment, the ferromagnetic particles contain at least one of the elements Fe, Ni, Co. The particles can consist of one of the mentioned elements or a compound with the elements. For example, the ferromagnetic particles are formed from an alloy with at least one of the elements.

[0040] In at least one embodiment, the ferromagnetic particles have a diameter of 10 nanometers or more and 5 micrometers or less. The ferromagnetic particles preferably have a diameter of 10 nanometers or more and 1 micrometer or less, preferably 50 nanometers or more and 500 nanometers or less.

[0041] In at least one embodiment, in the matrix material, the ferromagnetic particles are present in a proportion of 30% by weight or less, preferably 20% by weight or less, more preferably 10% by weight or less.

[0042] The content of the ferromagnetic particles in the matrix material and the diameter of the ferromagnetic particles enable effective heat introduction into the matrix material during induction heating of the ferromagnetic particles. The concentration and particle size of the ferromagnetic particles are selected so as not to cause a short circuit in the connecting element of the optoelectronic component.

[0043] The manufacturing process of optoelectronic components and further advantageous embodiments, configurations, and developments of optoelectronic components will become apparent from the examples described below in conjunction with the drawings.

Brief Description of the Drawings

[0044]

Figure 1

Figure 2A

Figure 2B

Figure 2C

Figure 2D

Figure 2E

Figure 3

Figure 4

Figure 5

Modes for Carrying Out the Invention

[0045] Elements that are the same, of the same type, or have the same effect are given the same reference numeral. The drawings and the relative size ratios of the elements shown in the drawings should not be considered to be to an exact scale. Instead, individual elements, in particular layer thicknesses, may be represented in an overly large size for better representability and / or better understanding.

[0046] Embodiments may have additional elements, such as intermediate layers, similar to the elements shown in the figures, but these are not shown for clarity.

[0047] According to an example, in a first step of a process for manufacturing an optoelectronic component, a substrate 1 is provided as shown with FIG. 1A. Specifically, substrate 1 is a growth substrate for a semiconductor layer stack 2. For example, substrate 1 is sapphire.

[0048] In a further step of the process, a semiconductor layer stack 2 is added to and thus provided on substrate 1. This step is shown with FIG. 1B. For example, by epitaxial growth, a semiconductor layer stack 2 is provided on substrate 1. The semiconductor layer stack 2 has an active region 3 that can generate or detect electromagnetic radiation.

[0049] In the next process step, a matrix material 4 is applied to the side of the semiconductor layer stack 2 remote from substrate 1 as shown in FIG. 1C. Specifically, matrix material 4 is a low melting point glass, for example, TeO 2 V 2 O 5 . Matrix material 4 contains ferromagnetic particles 5 and can be heated by induction heating using ferromagnetic particles 5. The ferromagnetic particles are, for example, nanoparticles containing Fe or nanoparticles consisting of Fe.

[0050] When the matrix material 4 containing ferromagnetic particles 5 is applied to the semiconductor layer series 2, the ferromagnetic particles 5 are inductively heated. As a result, the matrix material 4 is at least partially softened. To perform inductive heating, a coil is introduced near the matrix material 4 containing ferromagnetic particles 5. By applying an alternating current or an alternating voltage, an alternating magnetic field is generated in the ferromagnetic particles 5. The alternating magnetic field generates eddy currents in the ferromagnetic particles 5, and transformer magnetization can occur in the ferromagnetic particles 5. This causes heat loss and heating of the ferromagnetic particles 5.

[0051] The ferromagnetic particles 5 heated in this way transfer heat to the surrounding matrix material 4. Therefore, the ferromagnetic particles 5 play a role in indirectly heating the matrix material 4. By heating the matrix material 4, the viscosity of the matrix material 4 decreases. That is, the matrix material 4 is softened.

[0052] Following the inductive heating of the ferromagnetic particles 4 and thus also following the inductive heating of the matrix material 5, the matrix material 4 is cured. When the matrix material 4 is glass, curing is achieved, for example, by cooling to room temperature. The cured matrix material 4 forms at least a part of the support 6. The support 6 provides stability to the completed optoelectronic component and enables easy attachment to the parent component.

[0053] With reference to FIGS. 2A - 2E, a process for manufacturing an optoelectronic component in a further embodiment is described. The optoelectronic component is here shown as a cluster and is unified after the completion of all process steps.

[0054] FIG. 2A shows that a connection layer 8 is added on the side surface of the semiconductor layer series 2 far from the substrate 1. The semiconductor layer series 2 here is epitaxially grown on the substrate 1 as described in connection with FIGS. 1A and 1B.

[0055] Specifically, the connection layer 8 in FIG. 2A is a metal layer of, for example, Ag. The connection layer 8 enables electrical contact connection of the semiconductor layer stack 2. Further, the connection layer 8 may be at least partially reflective with respect to electromagnetic radiation that can be generated or detected in the active region 3 of the semiconductor layer stack 2. Thereby, radiation loss in the completed optoelectronic component is reduced.

[0056] As shown in FIG. 2B, a connection element 9 is attached to the connection layer 8. Both the connection layer 8 and the connection element 9 form the connection structure 7. The connection element 9 can be used to electrically connect the completed optoelectronic component to, for example, a printed circuit board. The connection element 9 is formed of a metal, in particular Ni.

[0057] In a further process step shown in FIG. 2C, a matrix material 4 is applied to the connection structure 7 including the connection element 9 and the connection layer 8. Two possible embodiments of this process step are explained in connection with FIGS. 3 and 4.

[0058] The matrix material 4 includes ferromagnetic particles 5 and preferably has electrical insulation properties. Specifically, the matrix material 4 is a low-melting glass, for example TeO 2 V 2 O 5 . The matrix material 4 is applied so as to completely surround the connection element 9 in the lateral direction. That is, all sides of the connection element 9 are completely covered with the matrix material 4. The ferromagnetic particles 5 are preferably arranged in the matrix material 4 so that no short circuit occurs between two adjacent connection elements 9. Accordingly, the diameter and concentration of the ferromagnetic particles 5 in the matrix material are selected.

[0059] To achieve complete coverage of the connection element 9 by the matrix material 4, the matrix material is heated and thus softened by induction heating of the ferromagnetic particles 5. Subsequently, the matrix material 4 is cured, for example, by cooling to room temperature, thus forming the support 6.

[0060] Specifically, the heat treatment of the matrix material 4 can be performed by reheating using induction heating of the ferromagnetic particles 5. The heat treatment can affect the optical and / or mechanical properties of the matrix material 4. For example, the matrix material 4 can be hardened by the heat treatment.

[0061] After hardening the matrix material 4 containing the ferromagnetic particles 5, as shown with FIG. 2D, the substrate 1 is removed by laser lift-off. Thereby, radiation loss is avoided or at least reduced such that the substrate 1 does not absorb, for example, the electromagnetic radiation generated or detected in the active region 3 of the semiconductor layer stack 2.

[0062] A process step in which the matrix material 4 is partially removed is shown with FIG. 2E. Specifically, the matrix material 4 is removed using chemical mechanical polishing. A sufficient amount of the matrix material 4 is removed so that no matrix material 4 is present on the surface of the connection element 9 far from the semiconductor layer stack 2. Thus, the connection element 9 penetrates the matrix material 4 of the support 6 and terminates in the same plane on the side far from the semiconductor layer stack 2. In other words, the connection element 9 is exposed by the removal of the matrix material 4 and can be used for electrical contact connection of the semiconductor layer stack 2.

[0063] To complete the optoelectronic component, the components created in the cluster are singulated by a dicing method.

[0064] As shown in connection with FIG. 3, in one embodiment of the process for manufacturing an optoelectronic component, a matrix material 4 containing ferromagnetic particles 5 is applied as a sheet 10. The induction heating of the ferromagnetic particles 5, and thus the heating of the matrix material 4, also results in softening of the matrix material 4. That is, the viscosity of the matrix material 4 decreases. Thereby, it becomes possible to flow the matrix material 4 between the connection elements 9 attached to the semiconductor layer stack 2. Preferably, all exposed surfaces of the connection element 9 are covered with the matrix material 4. The connection element 9 and the underlying layers can be protected from mechanical stress by the matrix material.

[0065] As an alternative to the method of applying the matrix material 4 shown in FIG. 3, the matrix material 4 may be applied as a suspension. Such an operation process is shown with reference to FIG. 4. The suspension 11 contains the particles of the matrix material 4 and the ferromagnetic particles 5 in a state of being suspended in a solvent. Examples of the solvent used include a mixture of water and alcohol. Specifically, a binder may be added to the suspension 11. The suspension 11 is applied to the connection structure 7 by a printing method such as bar coating or screen printing. Since the viscosity of the suspension 11 is low, the suspension completely covers the connection structure 7. This means that all the surfaces of the connection structure 7 that were exposed before the application of the matrix material 4 are covered with the suspension 11. Before the ferromagnetic particles 5 are inductively heated and the matrix material 4 is also heated, the solvent of the suspension 11 is at least partially removed. Thereafter, the connection structure 7 is mainly surrounded by the particles of the matrix material 4 and the ferromagnetic particles 5.

[0066] To form an adherent support 6 from the matrix material 4 applied as the suspension 11, the matrix material 4 is heated using the ferromagnetic particles 5. The ferromagnetic particles 5 are inductively heated, and the heat of the ferromagnetic particles 5 is transferred to the surrounding matrix material 4. By heating, the particles of the matrix material 4 are softened, and they combine to form a layer with adhesion and close adhesion.

[0067] FIG. 5 shows a optoelectronic component 12 according to an embodiment that can be manufactured by the process described herein. The optoelectronic component 12 has a semiconductor layer stack 2 including an active region 3. The active region 3 is configured to generate electromagnetic radiation. The optoelectronic component in this case is, for example, a light-emitting diode chip.

[0068] A connection layer 8 is added on the semiconductor layer stack 2. The connection layer 8 is preferably a metal layer that is at least partially reflective. For example, the connection layer 8 contains Ag or is formed from Ag. The connection layer 8 reflects the electromagnetic radiation generated in the active region 3, and thus plays a role in avoiding or at least reducing the radiation loss in the optoelectronic component 12. Furthermore, the semiconductor layer stack 2 can be electrically contacted via the connection layer 8.

[0069] Furthermore, the optoelectronic component 12 has two connection elements 9 configured for the electrical contact connection of the semiconductor layer stack 2. For example, the connection elements are formed from a metal, in particular Ni. The two connection elements 9 and the connection layer 8 together form a connection structure 7. The connection element 9 is attached on the side surface of the connection layer 8 far from the semiconductor layer stack 2.

[0070] The optoelectronic component 12 also has a support 6 for mechanical stabilization. The support 6 contains a matrix material 4. The matrix material 4 has electrical insulation. In this way, a short circuit between the connection elements 9 is prevented. The matrix material 4 is, for example, a low melting point glass, in particular TeO 2 V 2 O 5 is. Using a low melting point glass for the matrix material 4 is preferred because it reduces the thermal stress on other elements of the optoelectronic component 12, in particular the connection layer 8, during the manufacturing process. In contrast to the conventionally used organic polymers, such as epoxy resins, for the matrix material 4, the optoelectronic component 12 has durability at higher temperatures.

[0071] The matrix material 4 completely surrounds the side surfaces of the connection elements 9. The connection elements 9 penetrate the matrix material 4. The surfaces of the connection elements 9 far from the connection layer 8 and the surface of the matrix material 4 terminate in the same plane with each other.

[0072] The matrix material 4 contains ferromagnetic particles 5. The ferromagnetic particles 5 can be used to indirectly heat the matrix material 4. The ferromagnetic particles 5 are preferably induction heated. Specifically, the ferromagnetic particles 5 contain Fe or are formed from Fe. In order to achieve uniform heat input into the matrix material 4, the ferromagnetic particles are uniformly distributed within the matrix material 4. For example, the ferromagnetic particles 5 are nanoparticles having a diameter of 50 nanometers or more and 500 nanometers or less. In order to prevent short circuits between the connection elements 9 due to the ferromagnetic particles 5, the proportion of the ferromagnetic particles 5 in the matrix material is 40% by weight or less.

[0073] The features and examples described with reference to the figures may be combined with each other in further examples even if not all combinations are explicitly described. Furthermore, the examples described with reference to the figures may alternatively or additionally have further features in accordance with the description in the summary part.

[0074] The present invention is not limited to the examples by the description with reference to the examples. Instead, any new features and any combinations of features, including any combination of the features in the claims, are to be included in the present invention even if the features themselves of that combination are not explicitly described in the claims or the examples.

[0075] List of reference numerals 1 Substrate 2 Semiconductor layer series 3 Active region 4 Matrix material 5 Ferromagnetic particles 6 Support 7 Connection structure 8 Connection layer 9 Connection element 10 Sheet 11 Suspension 12 Optoelectronic component

Claims

1. A process for manufacturing an optoelectronic component, comprising: providing a semiconductor layer stack (2); applying a matrix material (4), which comprises ferromagnetic particles (5) and which is heatable by induction heating using the ferromagnetic particles (5), and which comprises glass or consists of glass; induction heating the ferromagnetic particles (5) to at least partially soften the matrix material; hardening the matrix material (4) to form at least part of a support (6) with the matrix material (4); A process for manufacturing an optoelectronic component, comprising the steps above.

2. The process for manufacturing an optoelectronic component according to claim 1, wherein the matrix material (4) is applied as a suspension (11).

3. The process for manufacturing an optoelectronic component according to claim 1, wherein the matrix material (4) is applied as a ready-made sheet (10).

4. The process for manufacturing an optoelectronic component according to claim 1, wherein the semiconductor layer stack (2) is grown on a growth substrate (1).

5. The process for manufacturing an optoelectronic component according to claim 4, wherein the growth substrate (1) is at least partially removed after the matrix material (4) has been hardened.

6. The process for manufacturing an optoelectronic component according to claim 1, wherein a connection structure (7) comprising a connection layer (8) and connection elements (9) is applied to the semiconductor layer stack (2) prior to the application of the matrix material (4).

7. The process for manufacturing an optoelectronic component according to claim 1, wherein part of the matrix material (4) is removed after the hardening of the matrix material (4).

8. The process for manufacturing an optoelectronic component according to claim 1, wherein a plurality of optoelectronic components are provided in a cluster.

9. The process for manufacturing an optoelectronic component according to claim 1, wherein singulation of the optoelectronic component is carried out after the removal of the matrix material (4).

10. a semiconductor layer stack (2) intended to generate or to detect electromagnetic radiation, A support (6) having a matrix material (4) containing ferromagnetic particles (5), wherein the matrix material (4) contains glass or consists of glass, the support (6), and An optoelectronic component (12) provided therewith.

11. The optoelectronic component (12) according to claim 10, wherein a connection layer (8) is disposed between the semiconductor layer stack (2) and the support (6).

12. The optoelectronic component (12) according to claim 11, wherein the connection layer (8) has reflectivity at at least some locations.

13. The optoelectronic component (12) according to claim 10, wherein the optoelectronic component has a connection element (9) for electrical contact connection of the semiconductor layer stack (2).

14. The optoelectronic component (12) according to claim 13, wherein the connection element (9) penetrates the matrix material (4) of the support (6).

15. The optoelectronic component (12) according to claim 13, wherein the connection element (9) and the support (6) terminate in the same plane with respect to their sides remote from the semiconductor layer stack (2).

16. The optoelectronic component (12) according to claim 10, wherein the glass has a glass transition temperature of 350 °C or lower.

17. The optoelectronic component (12) according to claim 10, wherein the glass is tellurite glass, bismuth glass, vanadate glass, or a mixture of at least two of these glasses.

18. The optoelectronic component (12) according to claim 10, wherein the ferromagnetic particles (5) contain at least one of the elements Fe, Ni, and Co.

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