Semiconductor device

Abstract

To provide a flexible and thinned touch panel with high detection sensitivity.SOLUTION: A touch panel includes a first flexible substrate, a first insulating layer over the first substrate, a transistor and a light-emitting element over the first insulating layer, a color filter over the light-emitting element, a pair of sensor electrodes over the color filter, a second insulating layer over the sensor electrodes, a second flexible substrate over the second insulating layer, and a protective layer over the second substrate. A first bonding layer is between the light-emitting element and the color filter. A thickness of the first substrate and the second substrate is each 1 μm to 200 μm. The first bonding layer includes a region with a thickness of 50 nm to 10 μm.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] One aspect of the present invention relates to a display device. In particular, it relates to a display device that has flexibility and can be curved. One aspect of the present invention also relates to a touch panel. In particular, it relates to a touch panel that has flexibility and can be curved.

[0002] Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the invention disclosed in this specification, etc. relates to an article, a method, or a manufacturing method. Or, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition (composition of matter). Therefore, more specifically, examples of the technical field of one aspect of the present invention disclosed in this specification include semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, their driving methods, or their manufacturing methods.

Background Art

[0003] In recent years, display devices are expected to be applied to various uses and diversification is required. For example, the thinning, high performance, and multifunctionalization of smartphones and tablet terminals equipped with touch panels as portable information terminals are progressing.

[0004] In addition, Patent Document 1 discloses a flexible active matrix light-emitting device including a transistor as a switching element and an organic EL element on a film substrate.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

[0006] There is a demand for a touch panel that is thinned to have flexibility and has a function of inputting by touching the screen with a finger or the like as a user interface.

[0007] One aspect of the present invention is to provide a flexible touch panel as one of the problems. Also, or, one of the problems is to achieve both thinning of the touch panel and high detection sensitivity.

[0008] Or, one of the problems is to provide a novel display device. Or, one of the problems is to provide a novel touch sensor. Or, one of the problems is to provide a novel touch panel.

[0009] Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention is not required to solve all of these problems. Also, problems other than the above will be apparent from the description in the specification and the like, and problems other than the above can be extracted from the description in the specification and the like. MEANS FOR SOLVING THE PROBLEMS

[0010] One aspect of the present invention includes a flexible first substrate, a first insulating layer on the first substrate, a transistor and a light-emitting element on the first insulating layer, a color filter on the light-emitting element, a pair of sensor electrodes on the color filter, a second insulating layer on the sensor electrodes, a flexible second substrate on the second insulating layer, and a protective layer on the second substrate.​​​ Yes. Further, it has a first adhesive layer between the light-emitting element and the color filter, and the thicknesses of the first substrate and the second substrate are 1 μm or more and 200 μm or less, and the thickness of the first adhesive layer has a region of 50 nm or more and 10 μm or less. Yes. Further, it has a first adhesive layer between the light-emitting element and the color filter, and the thicknesses of the first substrate and the second substrate are 1 μm or more and 200 μm or less, and the thickness of the first adhesive layer has a region of 50 nm or more and 10 μm or less. Yes. Further, it has a first adhesive layer between the light-emitting element and the color filter, and the thicknesses of the first substrate and the second substrate are 1 μm or more and 200 μm or less, and the thickness of the first adhesive layer has a region of 50 nm or more and 10 μm or less.

[0011] Further, a first conductive film is provided on the first insulating layer, and it is preferable that either one of the sensor electrodes and the first conductive film are electrically connected via a conductive connector. Further, a first conductive film is provided on the first insulating layer, and it is preferable that either one of the sensor electrodes and the first conductive film are electrically connected via a conductive connector.

[0012] Another aspect of the present invention is a touch panel including a flexible first substrate, a pair of sensor electrodes on the first substrate, a first insulating layer on the sensor electrodes, a transistor and a light-emitting element on the first insulating layer, a color filter below the light-emitting element, a second insulating layer on the light-emitting element, a flexible second substrate on the second insulating layer, and a protective layer below the first substrate. Further, it has a first adhesive layer between the light-emitting element and the second insulating layer, the thicknesses of the first substrate and the second substrate are 1 μm or more and 200 μm or less, and the thickness of the first adhesive layer has a region of 50 nm or more and 10 μm or less. Another aspect of the present invention is a touch panel including a flexible first substrate, a pair of sensor electrodes on the first substrate, a first insulating layer on the sensor electrodes, a transistor and a light-emitting element on the first insulating layer, a color filter below the light-emitting element, a second insulating layer on the light-emitting element, a flexible second substrate on the second insulating layer, and a protective layer below the first substrate. Further, it has a first adhesive layer between the light-emitting element and the second insulating layer, the thicknesses of the first substrate and the second substrate are 1 μm or more and 200 μm or less, and the thickness of the first adhesive layer has a region of 50 nm or more and 10 μm or less. Another aspect of the present invention is a touch panel including a flexible first substrate, a pair of sensor electrodes on the first substrate, a first insulating layer on the sensor electrodes, a transistor and a light-emitting element on the first insulating layer, a color filter below the light-emitting element, a second insulating layer on the light-emitting element, a flexible second substrate on the second insulating layer, and a protective layer below the first substrate. Further, it has a first adhesive layer between the light-emitting element and the second insulating layer, the thicknesses of the first substrate and the second substrate are 1 μm or more and 200 μm or less, and the thickness of the first adhesive layer has a region of 50 nm or more and 10 μm or less. Another aspect of the present invention is a touch panel including a flexible first substrate, a pair of sensor electrodes on the first substrate, a first insulating layer on the sensor electrodes, a transistor and a light-emitting element on the first insulating layer, a color filter below the light-emitting element, a second insulating layer on the light-emitting element, a flexible second substrate on the second insulating layer, and a protective layer below the first substrate. Further, it has a first adhesive layer between the light-emitting element and the second insulating layer, the thicknesses of the first substrate and the second substrate are 1 μm or more and 200 μm or less, and the thickness of the first adhesive layer has a region of 50 nm or more and 10 μm or less. Another aspect of the present invention is a touch panel including a flexible first substrate, a pair of sensor electrodes on the first substrate, a first insulating layer on the sensor electrodes, a transistor and a light-emitting element on the first insulating layer, a color filter below the light-emitting element, a second insulating layer on the light-emitting element, a flexible second substrate on the second insulating layer, and a protective layer below the first substrate. Further, it has a first adhesive layer between the light-emitting element and the second insulating layer, the thicknesses of the first substrate and the second substrate are 1 μm or more and 200 μm or less, and the thickness of the first adhesive layer has a region of 50 nm or more and 10 μm or less. Another aspect of the present invention is a touch panel including a flexible first substrate, a pair of sensor electrodes on the first substrate, a first insulating layer on the sensor electrodes, a transistor and a light-emitting element on the first insulating layer, a color filter below the light-emitting element, a second insulating layer on the light-emitting element, a flexible second substrate on the second insulating layer, and a protective layer below the first substrate. Further, it has a first adhesive layer between the light-emitting element and the second insulating layer, the thicknesses of the first substrate and the second substrate are 1 μm or more and 200 μm or less, and the thickness of the first adhesive layer has a region of 50 nm or more and 10 μm or less. Another aspect of the present invention is a touch panel including a flexible first substrate, a pair of sensor electrodes on the first substrate, a first insulating layer on the sensor electrodes, a transistor and a light-emitting element on the first insulating layer, a color filter below the light-emitting element, a second insulating layer on the light-emitting element, a flexible second substrate on the second insulating layer, and a protective layer below the first substrate. Further, it has a first adhesive layer between the light-emitting element and the second insulating layer, the thicknesses of the first substrate and the second substrate are 1 μm or more and 200 μm or less, and the thickness of the first adhesive layer has a region of 50 nm or more and 10 μm or less.

[0013] Further, it is preferable that the semiconductor layer where the channel of the transistor is formed has an oxide semiconductor. Further, it is preferable that the semiconductor layer where the channel of the transistor is formed has an oxide semiconductor.

[0014] Further, it may have polycrystalline silicon in the semiconductor layer where the channel of the transistor is formed. Further, it may have polycrystalline silicon in the semiconductor layer where the channel of the transistor is formed.

[0015] Further, it is preferable that the protective layer contains aluminum oxide or yttrium oxide. Further, it is preferable that the protective layer contains aluminum oxide or yttrium oxide.

[0016] Also, a second adhesive layer is provided between the first insulating layer and the first substrate, and the thickness of the second adhesive layer is preferably 50 nm or more and 10 μm or less.

[0017] Also, a third adhesive layer is provided between the second insulating layer and the second substrate, and the thickness of the third adhesive layer is preferably 50 nm or more and 10 μm or less.

Advantages of the Invention

[0018] According to one aspect of the present invention, a flexible touch panel can be provided. Alternatively, it is possible to achieve both thinning of the touch panel and high detection sensitivity.

[0019] Alternatively, a novel display device, touch sensor, or touch panel can be provided. Note that this description of these effects does not preclude the existence of other effects. Note that one aspect of the present invention does not necessarily have to have all of these effects. Note that other effects will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract these other effects from the description in the specification, drawings, claims, etc.

Brief Description of the Drawings

[0020]

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Embodiments for Carrying Out the Invention

[0021] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and various changes can be made to its form and details without departing from the spirit and scope of the present invention, which can be easily understood by those skilled in the art. Therefore, the present invention It should not be construed as being limited to the described content.

[0022] In the configuration of the invention described below, for the same part or parts having similar functions, the same reference numerals are commonly used among different drawings, and repeated descriptions thereof are omitted. Also, when referring to similar functions, the hatching patterns may be the same, and there may be cases where no reference numerals are particularly assigned.

[0023] In each of the drawings described in this specification, the size of each component, the thickness of each layer, or the area may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

[0024] Note that the ordinal numbers such as "first" and "second" in this specification are attached to avoid confusion of components and are not numerically limiting.

[0025] (Embodiment 1) In this embodiment, a configuration example of a touch panel according to an aspect of the present invention will be described with reference to the drawings.

[0026] [Configuration Example of Touch Panel] FIG. 1(A) is a perspective schematic view of a touch panel 100 exemplified below.

[0027] The touch panel 100 includes at least a display device 110 and a touch sensor 120 between a flexible substrate 101 and a flexible substrate 102.

[0028] FIG. 1(B) is a perspective schematic view showing the touch sensor 120 in FIG. 1(A), and FIG. 1(C ) is a perspective schematic view showing a configuration including the display device 110, the wiring 131, the wiring 132, and the wiring 144 in FIG. 1(A).

[0029] ​​​​As the touch sensor 120, for example, a capacitance-type touch sensor can be applied. Electrostatic As the capacitance method, there are a surface capacitance method, a projection capacitance method, etc. As the projection capacitance method, mainly due to the difference in the driving method, there are a self-capacitance method, a mutual-capacitance method, etc. Using the mutual capacitance method is preferable because simultaneous multi-point detection becomes possible.

[0030] Hereinafter, the case of applying a projection capacitance type touch sensor will be described.

[0031] Note that various sensors (for example, an optical sensor using a photoelectric conversion element, a pressure sensor using a pressure-sensitive element) that can detect the proximity or contact of a detection target such as a finger can also be applied. be applied.

[0032] The touch sensor 120 has a plurality of electrodes 121 and a plurality of electrodes 122. The electrode 121 is electrically connected to any one of the plurality of wirings 131, and the electrode 122 is electrically connected to any one of the plurality of wirings 132. An FPC 142 is electrically connected to the wiring 131. Also, an FPC 143 is electrically connected to the wiring 132.

[0033] The electrode 121 has a shape extending in one direction. Also, the electrode 122 has a shape extending in a direction intersecting the electrode 121. Also, a dielectric layer is provided between the electrode 121 and the electrode 122, and a capacitance is formed at these intersection portions. The touch sensor 120 has a configuration in which a plurality of such electrodes 12 1 and a plurality of electrodes 122, and the dielectric layer therebetween, form a plurality of capacitive elements arranged in a matrix. arranged.

[0034] Also, the electrode 121 and the electrode 122 preferably have translucency. Here, FIG. 1 As shown in (B), the electrodes 121 and 122 are preferably arranged in a shape that minimizes the gap between them. Also, a dummy electrode including the same conductive film as the electrode 121 or the electrode 122 may be provided in these gaps. By minimizing the gap between the electrodes 121 and 122 in this way, unevenness in transmittance can be reduced. As a result, unevenness in the luminance of the light transmitted through the touch sensor 120 can be reduced. Further, it is preferable that the electrodes 121 and 122 be arranged in a shape such that as little gap as possible is formed between them. Also, a dummy electrode including the same conductive film as the electrode 121 or the electrode 122 may be provided in these gaps. By minimizing the gap between the electrodes 121 and 122 in this way, unevenness in transmittance can be reduced. As a result, unevenness in the luminance of the light transmitted through the touch sensor 120 can be reduced. Further, it is preferable that the electrodes 121 and 122 be arranged in a shape such that as little gap as possible is formed between them. Also, a dummy electrode including the same conductive film as the electrode 121 or the electrode 122 may be provided in these gaps. By minimizing the gap between the electrodes 121 and 122 in this way, unevenness in transmittance can be reduced. As a result, unevenness in the luminance of the light transmitted through the touch sensor 120 can be reduced. Further, it is preferable that the electrodes 121 and 122 be arranged in a shape such that as little gap as possible is formed between them. Also, a dummy electrode including the same conductive film as the electrode 121 or the electrode 122 may be provided in these gaps. By minimizing the gap between the electrodes 121 and 122 in this way, unevenness in transmittance can be reduced. As a result, unevenness in the luminance of the light transmitted through the touch sensor 120 can be reduced. Further, it is preferable that the electrodes 121 and 122 be arranged in a shape such that as little gap as possible is formed between them. Also, a dummy electrode including the same conductive film as the electrode 121 or the electrode 122 may be provided in these gaps. By minimizing the gap between the electrodes 121 and 122 in this way, unevenness in transmittance can be reduced. As a result, unevenness in the luminance of the light transmitted through the touch sensor 120 can be reduced.

[0035] The display device 110 includes at least a display unit 111 including a plurality of pixels, and a wiring 144 for supplying signals and power to the display unit 111. The pixels included in the display unit 111 preferably include transistors and display elements. As the display element, typically an organic EL element can be used. The display device 110 includes at least a display unit 111 including a plurality of pixels, and a wiring 144 for supplying signals and power to the display unit 111. The pixels included in the display unit 111 preferably include transistors and display elements. As the display element, typically an organic EL element can be used. The display device 110 includes at least a display unit 111 including a plurality of pixels, and a wiring 144 for supplying signals and power to the display unit 111. The pixels included in the display unit 111 preferably include transistors and display elements. As the display element, typically an organic EL element can be used. The display device 110 includes at least a display unit 111 including a plurality of pixels, and a wiring 144 for supplying signals and power to the display unit 111. The pixels included in the display unit 111 preferably include transistors and display elements. As the display element, typically an organic EL element can be used.

[0036] Also, in FIG. 1, the display device 110 shows a configuration including not only the display unit 111 but also a driving circuit 112. As the driving circuit 112, for example, a circuit that functions as a scanning line driving circuit, a signal line driving circuit, or the like can be applied. Also, in FIG. 1, the display device 110 shows a configuration including not only the display unit 111 but also a driving circuit 112. As the driving circuit 112, for example, a circuit that functions as a scanning line driving circuit, a signal line driving circuit, or the like can be applied. Also, in FIG. 1, the display device 110 shows a configuration including not only the display unit 111 but also a driving circuit 112. As the driving circuit 112, for example, a circuit that functions as a scanning line driving circuit, a signal line driving circuit, or the like can be applied.

[0037] An FPC 141 is electrically connected to the wiring 144. Signals and power for driving the display device 110 can be supplied from the FPC 141 via the wiring 144. An FPC 141 is electrically connected to the wiring 144. Signals and power for driving the display device 110 can be supplied from the FPC 141 via the wiring 144.

[0038] Also, in FIG. 1, an example is shown in which an IC 114 mounted by the COF method is provided on the FPC 141. The IC 114 can be an IC that functions as, for example, a scanning line driving circuit or a signal line driving circuit. When the display device 110 includes a circuit that functions as a scanning line driving circuit and a signal line driving circuit, or when the display device 110 includes a circuit that functions as a scanning line driving circuit or a signal line driving circuit, Also, in FIG. 1, an example is shown in which an IC 114 mounted by the COF method is provided on the FPC 141. The IC 114 can be an IC that functions as, for example, a scanning line driving circuit or a signal line driving circuit. When the display device 110 includes a circuit that functions as a scanning line driving circuit and a signal line driving circuit, or when the display device 110 includes a circuit that functions as a scanning line driving circuit or a signal line driving circuit, Also, in FIG. 1, an example is shown in which an IC 114 mounted by the COF method is provided on the FPC 141. The IC 114 can be an IC that functions as, for example, a scanning line driving circuit or a signal line driving circuit. When the display device 110 includes a circuit that functions as a scanning line driving circuit and a signal line driving circuit, or when the display device 110 includes a circuit that functions as a scanning line driving circuit or a signal line driving circuit, Also, in FIG. 1, an example is shown in which an IC 114 mounted by the COF method is provided on the FPC 141. The IC 114 can be an IC that functions as, for example, a scanning line driving circuit or a signal line driving circuit. When the display device 110 includes a circuit that functions as a scanning line driving circuit and a signal line driving circuit, or when the display device 110 includes a circuit that functions as a scanning line driving circuit or a signal line driving circuit, A circuit that functions is provided externally, and a signal for driving the display device 110 is input via the FPC 141. In the case of inputting such a signal, etc., the IC 114 may not be provided.

[0039] In FIG. 1, an example is shown in which the display device 110, the wiring 131, and the wiring 132 are provided on the first substrate 101 side, and the touch sensor 120 is provided on the second substrate 102 side.

[0040] [Cross-sectional configuration example] FIG. 2(A) shows an example of the cross-sectional configuration at the cutting lines A1 - A2, B1 - B2, C1 - C2, and D1 - D2 shown in FIG. 1(A). In FIG. 2(A), as an example of the display unit 111, a cross-section of one pixel included in the display unit 111 is shown.

[0041] The first substrate 101 and the second substrate 102 are adhered by the first adhesive layer 151. The first adhesive layer 151 may also be provided between the light-emitting element 180 and the color filter 184.

[0042] The first substrate 101 and the second substrate 102 having flexibility have a thickness of, for example, 1 μm or more and 200 μm or less, preferably 3 μm or more and 100 μm or less, more preferably 5 μm or more and 50 μm or less. Typically, it may be about 20 μm. If the thickness is less than 1 μm, the mechanical strength of the touch panel 100 is insufficient, which becomes a factor of breakage. Also, if the thickness is greater than 200 μm, not only does the flexibility become poor, but also the bending stress generated when bent becomes large, and there is a risk that the substrate itself or the wiring and elements provided on the substrate may be damaged.

[0043] ​​​​​​​​​​In addition, it is preferable that the thicknesses of the first substrate 101 and the second substrate 102 are equal or approximately equal. By making the thicknesses of the first substrate 101 and the second substrate 102 uniform, the display device 110 and the touch sensor 120 disposed thereon can be arranged at the center of the touch panel. As a result, the influence of the bending stress generated when the touch panel is curved is suppressed from reaching the display device 110 and the touch sensor 120, so that problems such as breakage due to bending can be suppressed, and a highly reliable touch panel 100 can be realized. For example, of the thickness of the first substrate 101 and the thickness of the second substrate 102, the smaller thickness may be 80% or more, preferably 90% or more, more preferably 95% or more of the larger thickness. In addition, it is preferable that the thicknesses of the first substrate 101 and the second substrate 102 are equal or approximately equal. By making the thicknesses of the first substrate 101 and the second substrate 102 uniform, the display device 110 and the touch sensor 120 disposed thereon can be arranged at the center of the touch panel. As a result, the influence of the bending stress generated when the touch panel is curved is suppressed from reaching the display device 110 and the touch sensor 120, so that problems such as breakage due to bending can be suppressed, and a highly reliable touch panel 100 can be realized. For example, of the thickness of the first substrate 101 and the thickness of the second substrate 102, the smaller thickness may be 80% or more, preferably 90% or more, more preferably 95% or more of the larger thickness. In addition, it is preferable that the thicknesses of the first substrate 101 and the second substrate 102 are equal or approximately equal. By making the thicknesses of the first substrate 101 and the second substrate 102 uniform, the display device 110 and the touch sensor 120 disposed thereon can be arranged at the center of the touch panel. As a result, the influence of the bending stress generated when the touch panel is curved is suppressed from reaching the display device 110 and the touch sensor 120, so that problems such as breakage due to bending can be suppressed, and a highly reliable touch panel 100 can be realized. For example, of the thickness of the first substrate 101 and the thickness of the second substrate 102, the smaller thickness may be 80% or more, preferably 90% or more, more preferably 95% or more of the larger thickness. In addition, it is preferable that the thicknesses of the first substrate 101 and the second substrate 102 are equal or approximately equal. By making the thicknesses of the first substrate 101 and the second substrate 102 uniform, the display device 110 and the touch sensor 120 disposed thereon can be arranged at the center of the touch panel. As a result, the influence of the bending stress generated when the touch panel is curved is suppressed from reaching the display device 110 and the touch sensor 120, so that problems such as breakage due to bending can be suppressed, and a highly reliable touch panel 100 can be realized. For example, of the thickness of the first substrate 101 and the thickness of the second substrate 102, the smaller thickness may be 80% or more, preferably 90% or more, more preferably 95% or more of the larger thickness. In addition, it is preferable that the thicknesses of the first substrate 101 and the second substrate 102 are equal or approximately equal. By making the thicknesses of the first substrate 101 and the second substrate 102 uniform, the display device 110 and the touch sensor 120 disposed thereon can be arranged at the center of the touch panel. As a result, the influence of the bending stress generated when the touch panel is curved is suppressed from reaching the display device 110 and the touch sensor 120, so that problems such as breakage due to bending can be suppressed, and a highly reliable touch panel 100 can be realized. For example, of the thickness of the first substrate 101 and the thickness of the second substrate 102, the smaller thickness may be 80% or more, preferably 90% or more, more preferably 95% or more of the larger thickness. In addition, it is preferable that the thicknesses of the first substrate 101 and the second substrate 102 are equal or approximately equal. By making the thicknesses of the first substrate 101 and the second substrate 102 uniform, the display device 110 and the touch sensor 120 disposed thereon can be arranged at the center of the touch panel. As a result, the influence of the bending stress generated when the touch panel is curved is suppressed from reaching the display device 110 and the touch sensor 120, so that problems such as breakage due to bending can be suppressed, and a highly reliable touch panel 100 can be realized. For example, of the thickness of the first substrate 101 and the thickness of the second substrate 102, the smaller thickness may be 80% or more, preferably 90% or more, more preferably 95% or more of the larger thickness. In addition, it is preferable that the thicknesses of the first substrate 101 and the second substrate 102 are equal or approximately equal. By making the thicknesses of the first substrate 101 and the second substrate 102 uniform, the display device 110 and the touch sensor 120 disposed thereon can be arranged at the center of the touch panel. As a result, the influence of the bending stress generated when the touch panel is curved is suppressed from reaching the display device 110 and the touch sensor 120, so that problems such as breakage due to bending can be suppressed, and a highly reliable touch panel 100 can be realized. For example, of the thickness of the first substrate 101 and the thickness of the second substrate 102, the smaller thickness may be 80% or more, preferably 90% or more, more preferably 95% or more of the larger thickness. In addition, it is preferable that the thicknesses of the first substrate 101 and the second substrate 102 are equal or approximately equal. By making the thicknesses of the first substrate 101 and the second substrate 102 uniform, the display device 110 and the touch sensor 120 disposed thereon can be arranged at the center of the touch panel. As a result, the influence of the bending stress generated when the touch panel is curved is suppressed from reaching the display device 110 and the touch sensor 120, so that problems such as breakage due to bending can be suppressed, and a highly reliable touch panel 100 can be realized. For example, of the thickness of the first substrate 101 and the thickness of the second substrate 102, the smaller thickness may be 80% or more, preferably 90% or more, more preferably 95% or more of the larger thickness.

[0044] Also, it is preferable to use materials for the first substrate 101 and the second substrate 102 such that their linear thermal expansion coefficients are equal or approximately equal. By making these linear thermal expansion coefficients uniform, even when the heat applied during the manufacturing process or the temperature during use changes, the touch panel 100 can be prevented from being unintentionally bent. In addition, the temperature range in which stable operation of the touch panel is guaranteed can be widened. The difference between the linear thermal expansion coefficient of the material used for the second substrate 102 and the linear thermal expansion coefficient of the material used for the first substrate 101 is, for example, 10 ppm / K or less, preferably 5 ppm / K or less, more preferably 2 ppm / K or less in the range from 0°C to 200°C. Also, it is preferable to use materials for the first substrate 101 and the second substrate 102 such that their linear thermal expansion coefficients are equal or approximately equal. By making these linear thermal expansion coefficients uniform, even when the heat applied during the manufacturing process or the temperature during use changes, the touch panel 100 can be prevented from being unintentionally bent. In addition, the temperature range in which stable operation of the touch panel is guaranteed can be widened. The difference between the linear thermal expansion coefficient of the material used for the second substrate 102 and the linear thermal expansion coefficient of the material used for the first substrate 101 is, for example, 10 ppm / K or less, preferably 5 ppm / K or less, more preferably 2 ppm / K or less in the range from 0°C to 200°C. Also, it is preferable to use materials for the first substrate 101 and the second substrate 102 such that their linear thermal expansion coefficients are equal or approximately equal. By making these linear thermal expansion coefficients uniform, even when the heat applied during the manufacturing process or the temperature during use changes, the touch panel 100 can be prevented from being unintentionally bent. In addition, the temperature range in which stable operation of the touch panel is guaranteed can be widened. The difference between the linear thermal expansion coefficient of the material used for the second substrate 102 and the linear thermal expansion coefficient of the material used for the first substrate 101 is, for example, 10 ppm / K or less, preferably 5 ppm / K or less, more preferably 2 ppm / K or less in the range from 0°C to 200°C. Also, it is preferable to use materials for the first substrate 101 and the second substrate 102 such that their linear thermal expansion coefficients are equal or approximately equal. By making these linear thermal expansion coefficients uniform, even when the heat applied during the manufacturing process or the temperature during use changes, the touch panel 100 can be prevented from being unintentionally bent. In addition, the temperature range in which stable operation of the touch panel is guaranteed can be widened. The difference between the linear thermal expansion coefficient of the material used for the second substrate 102 and the linear thermal expansion coefficient of the material used for the first substrate 101 is, for example, 10 ppm / K or less, preferably 5 ppm / K or less, more preferably 2 ppm / K or less in the range from 0°C to 200°C. Also, it is preferable to use materials for the first substrate 101 and the second substrate 102 such that their linear thermal expansion coefficients are equal or approximately equal. By making these linear thermal expansion coefficients uniform, even when the heat applied during the manufacturing process or the temperature during use changes, the touch panel 100 can be prevented from being unintentionally bent. In addition, the temperature range in which stable operation of the touch panel is guaranteed can be widened. The difference between the linear thermal expansion coefficient of the material used for the second substrate 102 and the linear thermal expansion coefficient of the material used for the first substrate 101 is, for example, 10 ppm / K or less, preferably 5 ppm / K or less, more preferably 2 ppm / K or less in the range from 0°C to 200°C. Also, it is preferable to use materials for the first substrate 101 and the second substrate 102 such that their linear thermal expansion coefficients are equal or approximately equal. By making these linear thermal expansion coefficients uniform, even when the heat applied during the manufacturing process or the temperature during use changes, the touch panel 100 can be prevented from being unintentionally bent. In addition, the temperature range in which stable operation of the touch panel is guaranteed can be widened. The difference between the linear thermal expansion coefficient of the material used for the second substrate 102 and the linear thermal expansion coefficient of the material used for the first substrate 101 is, for example, 10 ppm / K or less, preferably 5 ppm / K or less, more preferably 2 ppm / K or less in the range from 0°C to 200°C. Also, it is preferable to use materials for the first substrate 101 and the second substrate 102 such that their linear thermal expansion coefficients are equal or approximately equal. By making these linear thermal expansion coefficients uniform, even when the heat applied during the manufacturing process or the temperature during use changes, the touch panel 100 can be prevented from being unintentionally bent. In addition, the temperature range in which stable operation of the touch panel is guaranteed can be widened. The difference between the linear thermal expansion coefficient of the material used for the second substrate 102 and the linear thermal expansion coefficient of the material used for the first substrate 101 is, for example, 10 ppm / K or less, preferably 5 ppm / K or less, more preferably 2 ppm / K or less in the range from 0°C to 200°C. Also, it is preferable to use materials for the first substrate 101 and the second substrate 102 such that their linear thermal expansion coefficients are equal or approximately equal. By making these linear thermal expansion coefficients uniform, even when the heat applied during the manufacturing process or the temperature during use changes, the touch panel 100 can be prevented from being unintentionally bent. In addition, the temperature range in which stable operation of the touch panel is guaranteed can be widened. The difference between the linear thermal expansion coefficient of the material used for the second substrate 102 and the linear thermal expansion coefficient of the material used for the first substrate 101 is, for example, 10 ppm / K or less, preferably 5 ppm / K or less, more preferably 2 ppm / K or less in the range from 0°C to 200°C.

[0045] In FIG. 2(A), the transistors 161 and 162 included in the drive circuit 112, and the transistors 163 and 164 included in the pixels of the display unit 111 In FIG. 2(A), the transistors 161 and 162 included in the drive circuit 112, and the transistors 163 and 164 included in the pixels of the display unit 111 64 is shown. Each transistor is provided on the first insulating layer 171.

[0046] In FIGS. 1 and 2(A), a configuration of a driver-integrated display device is shown in which a driving circuit 112 is formed on a first insulating layer 171 on which a display portion 111 is formed. However, one or both of a scanning line driving circuit and a signal line driving circuit that function as circuits separate from the insulating surface on which the display portion 111 is formed may be provided. For example, a driving circuit IC may be mounted by a COG method, or an FPC (Flexible Printed Circuit) on which a driving circuit IC is mounted by a COF method may be mounted. In FIG. 2(A), a bottom gate type transistor is shown as an example of a transistor provided in the driving circuit 112 and the display portion 111. Here, as a pixel included in the display portion 111 provided in the display device 110 and a transistor used in the driving circuit 112 or the like, it is preferable to apply an oxide semiconductor to a semiconductor layer in which a channel is formed. In particular, it is preferable to apply an oxide semiconductor having a larger bandgap than silicon.

[0047] Using a semiconductor material having a wider bandgap and a lower carrier density than silicon is preferable because it can reduce the current in the off state of the transistor. For example, as the oxide semiconductor, it is preferable to contain at least indium (In) or zinc (Zn).

[0048] Further, as the oxide semiconductor, it is more preferable to contain an oxide represented by an In-M-Zn-based oxide (M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf).

[0049] ​​​​​​​​

[0050] In particular, as the semiconductor layer, it has a plurality of crystal parts, and the c-axis of the crystal part is the surface to be formed of the semiconductor layer , or is oriented perpendicular to the upper surface of the semiconductor layer, and there are no grain boundaries between adjacent crystal parts , it is preferable to use an oxide semiconductor film.

[0051] Since such an oxide semiconductor has no grain boundaries, when the display panel is curved , the occurrence of cracks in the oxide semiconductor film due to stress is suppressed. Therefore, , such an oxide semiconductor can be suitably used for a display panel having flexibility and used in a curved state .

[0052] By using such a material as the semiconductor layer, fluctuations in electrical characteristics are suppressed, and a transistor with high reliability can be realized.

[0053] In addition, a transistor using an oxide semiconductor for the semiconductor layer has a low leakage current (off-current) between the source and drain in the off state. Therefore, the charge accumulated in the capacitor via the transistor can be held for a long time. By applying such a transistor to a pixel , it is also possible to stop the drive circuit while maintaining the gradation of the image displayed in each display area . As a result, an electronic device with extremely low power consumption can be realized.

[0054] Note that the preferred form of the oxide semiconductor applicable to the semiconductor layer and its formation method will be described in detail in the subsequent embodiments .

[0055] In addition, it is preferable to operate the touch sensor 120 during the period when the driving of the pixels is paused . By performing such an operation, the influence of noise generated during the driving of the pixels can be eliminated This enables an increase in the detection sensitivity of the touch sensor 120. In addition, since the influence of such noise can be eliminated, the distance between the touch sensor and the display unit 111 or the drive circuit 11 2 can be made extremely small. Specifically, in the region where the light-emitting element 180 and the color filter 184 overlap, the first substrate 101 and the second substrate 102 can be brought closer to each other to such an extent that the thickness of the adhesive layer 151 has a range of 50 nm or more and 10 μm or less, preferably 50 nm or more and 5 μm or less, more preferably 100 nm or more and 3 μm or less. The thickness of the adhesive layer 151 is 50 nm or more and 10 μm or less, preferably 50 nm or more and 5 μm or less, more preferably 100 nm or more and 3 μm or less. The thickness of the adhesive layer 151 is 50 nm or more and 10 μm or less, preferably 50 nm or more and 5 μm or less, more preferably 100 nm or more and 3 μm or less. The thickness of the adhesive layer 151 is 50 nm or more and 10 μm or less, preferably 50 nm or more and 5 μm or less, more preferably 100 nm or more and 3 μm or less.

[0056] Examples of the driving methods of the touch sensor 120 and the display device 110 will be described in a later embodiment form.

[0057] Alternatively, silicon may be used for the semiconductor layer in which a channel is formed as the pixels included in each display area provided in the display device 110 or the transistors used in each drive circuit. Silicon may be amorphous silicon, but it is particularly preferable to use silicon having crystallinity. For example, it is preferable to use microcrystalline silicon, polycrystalline silicon, single-crystalline silicon, etc. Silicon may be amorphous silicon, but it is particularly preferable to use silicon having crystallinity. For example, it is preferable to use microcrystalline silicon, polycrystalline silicon, single-crystalline silicon, etc. Silicon may be amorphous silicon, but it is particularly preferable to use silicon having crystallinity. For example, it is preferable to use microcrystalline silicon, polycrystalline silicon, single-crystalline silicon, etc. Silicon may be amorphous silicon, but it is particularly preferable to use silicon having crystallinity. For example, it is preferable to use microcrystalline silicon, polycrystalline silicon, single-crystalline silicon, etc. In particular, polycrystalline silicon can be formed at a lower temperature compared to single-crystalline silicon and has a higher field-effect mobility and higher reliability compared to amorphous silicon. By applying such a polycrystalline semiconductor to the pixels, the aperture ratio of the pixels can be improved. In addition, even when the pixels are extremely high-definition, it becomes possible to form the gate drive circuit and the source drive circuit on the same substrate as the pixels, and the number of components constituting the electronic device can be reduced. In addition, even when the pixels are extremely high-definition, it becomes possible to form the gate drive circuit and the source drive circuit on the same substrate as the pixels, and the number of components constituting the electronic device can be reduced. In addition, even when the pixels are extremely high-definition, it becomes possible to form the gate drive circuit and the source drive circuit on the same substrate as the pixels, and the number of components constituting the electronic device can be reduced. This enables an increase in the detection sensitivity of the touch sensor 120. In addition, since the influence of such noise can be eliminated, the distance between the touch sensor and the display unit 111 or the drive circuit 11

[0058] In addition, the transistor 161 and the transistor 162 are the second transistor as shown in FIG. For example, the second gate of the transistor 161 may have a gate of the transistor The gate of the transistor 161 may be electrically connected to the gate of the transistor 162, or different potentials may be applied to them. If necessary, a second gate may be provided for the transistor 163 or the transistor 164. If not required, the transistors 161 and 162 may be provided. Alternatively, the second gate may not be provided.

[0059] In addition to the gate, source, and drain of the transistor, the various wiring that makes up the touch panel Wires and electrodes include aluminum, titanium, chromium, nickel, copper, yttrium, The elemental metals zirconium, molybdenum, silver, tantalum, or tungsten; can be used as a single layer or a laminated structure of an alloy containing this as its main component. A single layer structure of aluminum film containing silicon, and a double layer structure of aluminum film laminated on titanium film A two-layer structure in which an aluminum film is laminated on a tungsten film, a copper-magnesium-aluminum film, Two-layer structure with copper film laminated on aluminum alloy film, two-layer structure with copper film laminated on titanium film, A two-layer structure in which a copper film is laminated on a tungsten film, a titanium film or titanium nitride film, and the titanium An aluminum film or a copper film is laminated on the silicon film or the titanium nitride film, and then an aluminum film or a copper film is laminated on the aluminum film or the copper film. Three-layer structure forming titanium film or titanium nitride film, molybdenum film or molybdenum nitride film Then, an aluminum film or a copper film is laminated on the molybdenum film or the molybdenum nitride film. There are three-layer structures, such as a layer of a molybdenum nitride film on top of the layer of a molybdenum nitride film. A transparent conductive material containing indium oxide, tin oxide, or zinc oxide may also be used. In addition, when using copper containing manganese, it is preferable because the controllability of the shape by etching is enhanced. .

[0060] One pixel in the display unit 111 includes a transistor 163 for switching, a transistor 164 for current control, and a first electrode 181 that is electrically connected to one electrode (source electrode or drain electrode) of the transistor 164 and is provided on the insulating layer 176. Further, an insulating layer 175 that covers the end portion of the first electrode 181 is provided. of the transistor 164 and a first electrode 181 provided on the insulating layer 176 and electrically connected to one electrode (source electrode or drain electrode) of the transistor 164. In addition, an insulating layer 175 that covers the end portion of the first electrode 181 is provided. An insulating layer 175 that covers the end of the first electrode 181 is provided.

[0061] Here, the structure of the transistors included in the display unit 111, the drive circuit 112, etc. is not limited to the above. For example, a staggered transistor or an inverse staggered transistor may be used. Also, either a top gate type or a bottom gate type transistor structure may be used. is not limited to the above. For example, a staggered transistor or an inverse staggered transistor may be used. Also, either a top gate type or a bottom gate type transistor structure may be used. Further, either a top gate type or a bottom gate type transistor structure may be used. may be used.

[0062] In FIG. 3, the case where transistors 161, 162, 163, and 164 are provided as transistors having a bottom gate structure of a channel protection type is shown. A protection layer is provided to cover the upper surface of the semiconductor layer of the transistor, and the semiconductor layer is electrically connected to the source electrode or the drain electrode through an opening provided in the protection layer. By adopting such a configuration, it is possible to suppress the thinning of the semiconductor layer due to etching when processing the source electrode and the drain electrode. A protection layer is provided to cover the upper surface of the semiconductor layer of the transistor, and the semiconductor layer is electrically connected to the source electrode or the drain electrode through an opening provided in the protection layer. By adopting such a configuration, it is possible to suppress the thinning of the semiconductor layer due to etching when processing the source electrode and the drain electrode. With such a configuration, it is possible to suppress the thinning of the semiconductor layer due to etching when processing the source electrode and the drain electrode. can be suppressed.

[0063] Also, FIG. 4 shows an example in which transistors 161, 162, 163, and 164 are transistors having a top gate structure. Also, FIG. 4 shows an example in which transistors 161, 162, 163, and 164 are transistors having a top gate structure.

[0064] When an oxide semiconductor is used for the semiconductor layer of a transistor, a bottom gate structure is used. It is preferable that an oxide semiconductor having a higher mobility than amorphous silicon is used at low temperatures. Therefore, the heat resistance of the gate electrode located under the semiconductor layer is not an issue. The range of materials to be used can be expanded. In comparison with the top gate structure, the manufacturing process can be simplified and the manufacturing costs can be reduced.

[0065] In particular, by using CAAC-OS as an oxide semiconductor, It is possible to improve the resistance of the oxide semiconductor to etching during the processing of the rain electrode. Therefore, when the CAAC-OS is used for the semiconductor layer, a channel etch structure is preferably used. This is preferable because it is possible to apply the same structure and the manufacturing process can be further simplified.

[0066] In addition, it is formed by transferring it onto polycrystalline silicon or an insulating layer as a semiconductor layer of a transistor. When single crystal silicon is used, it is preferable to use a top gate structure. By applying a gate-structure transistor, the material for the wiring and electrodes above the semiconductor layer can be This allows the use of materials with low heat resistance, broadening the range of material choices. In addition, when a highly heat-resistant material is used for the gate electrode or when polycrystalline silicon is used at an extremely low temperature ( For example, when the above-mentioned bottom gate structure is used, This is preferable since it reduces the manufacturing process.

[0067] The light emitting element 180 includes a first electrode 181, a second electrode 183, and an E It has an L layer 182. The light-emitting element 180 will now be described.

[0068] In the light-emitting element 180, for the light emitted from the EL layer 182, a material having translucency is used for the electrode provided on the light-emitting side.

[0069] As the material having translucency, in addition to the above-described conductive oxide and graphene, gold, silver, platinum , magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, pa lladium, or a metal material such as titanium, or an alloy material containing the metal material can be used. Alternatively, a nitride of the metal material (for example, titanium nitride) may be used. Note that when a metal material, an alloy material (or a nitride thereof) is used, it may be made thin enough to have translucency. In addition, a laminated film of the above materials can be used as the conductive layer. For example, when using a laminated film of an alloy of silver and magnesium and indium tin oxide, it is preferable because the conductivity can be enhanced.

[0070] Such an electrode is formed by a vapor deposition method, a sputtering method, or the like. In addition, it can be formed by a discharge method such as an inkjet method, a printing method such as a screen printing method, or a plating method.

[0071] When forming the above-described conductive oxide having translucency by a sputtering method, when the conductive oxide is formed into a film in an atmosphere containing argon and oxygen, the translucency can be improved.

[0072] When forming a conductive oxide film on the EL layer 182, a first conductive oxide film formed into a film in an atmosphere containing argon with a reduced oxygen concentration and a laminated film of a second conductive oxide film formed into a film in an atmosphere containing argon and oxygen are used, and the film formation damage to the EL layer 182 can be reduced. ​ Since it can be made, it is preferable. Here, in particular, when forming the first conductive oxide film, it is preferable that the purity of the argon gas used is high. For example, argon gas with a dew point of -70°C or lower, preferably - 100°C or lower is preferably used.

[0073] For the electrode provided on the side opposite to the light emission side, a material having reflectivity to the light emission is used.

[0074] Examples of the light-reflective material include metal materials such as aluminum, gold, platinum, silver, nickel, tan gsten, chromium, molybdenum, iron, cobalt, copper, or palladium, and alloy materials containing the metal material can be used. Further, lanthanum, neodymium, germanium, etc. may be added to such a metal material or alloy material. Examples of alloy materials include alloys containing aluminum such as an alloy of aluminum and titanium, an alloy of aluminum and nickel, an alloy of aluminum and neodymium (aluminum alloy), and alloys containing silver such as an alloy of silver and copper, an alloy of silver and para dium and copper, and an alloy of silver and magnesium. An alloy containing silver and copper is preferable because of its high heat resistance. Further, by laminating a metal film or a metal oxide film in contact with the aluminum-containing film, oxidation of the aluminum-containing film can be suppressed. Examples of the metal material or metal oxide material provided in contact with the aluminum-containing film include titanium, titanium oxide, etc. Further, a film made of the above light-transmissive material and a film made of a metal material may be laminated. For example, a laminated film of silver and indium tin oxide, a laminated film of an alloy of silver and magnesium and indium tin oxide, etc. can be used.

[0075] Such electrodes are formed by vapor deposition, sputtering, or the like. In addition, they can be formed using a jetting method such as an inkjet method, a printing method such as a screen printing method, or an electroplating method.

[0076] The EL layer 182 may include at least a layer containing a light-emitting organic compound (hereinafter also referred to as a light-emitting layer), and may be composed of a single layer or a plurality of layers stacked. As a configuration in which a plurality of layers are stacked, an example is a configuration in which a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer are stacked from the anode side. Note that not all of these layers other than the light-emitting layer need to be provided in the EL layer 182. In addition, these layers can be provided in duplicate. Specifically, a plurality of light-emitting layers may be stacked in the EL layer 182. In addition, other configurations such as a charge generation region can be appropriately added. Further, for example, a configuration in which a plurality of light-emitting layers exhibiting different emission colors are stacked may be used. For example, white light emission can be obtained by stacking two or more light-emitting layers having a complementary color relationship.

[0077] The EL layer 182 can be formed using a vacuum vapor deposition method, a jetting method such as an inkjet method or a dispensing method, a coating method such as a spin coating method, or a printing method.

[0078] In this embodiment, a material having reflectivity is used as the first electrode 181, and a material having translucency is used as the second electrode 1 83. Therefore, the light-emitting element 180 is a top emission type (top emission type) light-emitting element, and emits light toward the second substrate 102 side.

[0079] The above is the description of the light-emitting element 180.

[0080] ​​​​​​​​​ The second electrode 122 that constitutes the touch sensor 120 is formed in contact with the second insulating layer 172. Further, a dielectric layer 123 is provided to cover the second insulating layer 172, and a first electrode 121 that intersects the second electrode 122 is provided via the dielectric layer 123. As the first electrode 121 and the second electrode 122, the above-described translucent conductive material can be used.

[0081] After forming a film of a translucent conductive material on the insulating layer 172 by sputtering, unnecessary portions are removed by various patterning techniques such as photolithography to form the first electrode 121 and the second electrode 122. Graphene may be formed by, for example, the CVD method or by applying a solution in which graphene oxide is dispersed and then reducing the same. As the material used for the dielectric layer 123, for example, resins such as acrylic and epoxy, resins having a siloxane bond, and inorganic insulating materials such as silicon oxide, silicon oxynitride, and aluminum oxide can also be used.

[0082] After forming a film of a translucent conductive material on the insulating layer 172 by sputtering, unnecessary portions are removed by various patterning techniques such as photolithography to form the first electrode 121 and the second electrode 122. Graphene may be formed by, for example, the CVD method or by applying a solution in which graphene oxide is dispersed and then reducing the same. After forming a film of a translucent conductive material on the insulating layer 172 by sputtering, unnecessary portions are removed by various patterning techniques such as photolithography to form the first electrode 121 and the second electrode 122. Graphene may be formed by, for example, the CVD method or by applying a solution in which graphene oxide is dispersed and then reducing the same. After forming a film of a translucent conductive material on the insulating layer 172 by sputtering, unnecessary portions are removed by various patterning techniques such as photolithography to form the first electrode 121 and the second electrode 122. Graphene may be formed by, for example, the CVD method or by applying a solution in which graphene oxide is dispersed and then reducing the same. After forming a film of a translucent conductive material on the insulating layer 172 by sputtering, unnecessary portions are removed by various patterning techniques such as photolithography to form the first electrode 121 and the second electrode 122. Graphene may be formed by, for example, the CVD method or by applying a solution in which graphene oxide is dispersed and then reducing the same.

[0083] As the material used for the dielectric layer 123, for example, resins such as acrylic and epoxy, resins having a siloxane bond, and inorganic insulating materials such as silicon oxide, silicon oxynitride, and aluminum oxide can also be used. As the material used for the dielectric layer 123, for example, resins such as acrylic and epoxy, resins having a siloxane bond, and inorganic insulating materials such as silicon oxide, silicon oxynitride, and aluminum oxide can also be used. As the material used for the dielectric layer 123, for example, resins such as acrylic and epoxy, resins having a siloxane bond, and inorganic insulating materials such as silicon oxide, silicon oxynitride, and aluminum oxide can also be used.

[0084] Also, an insulating layer 125 is provided to cover the first electrode 121, the dielectric layer 123, and the second electrode 122 that constitute the touch sensor 120. The insulating layer 125 covers the step of the touch sensor 120 and functions as a planarization layer for making the thickness of the color filter 184 uniform. Also, an insulating layer 125 is provided to cover the first electrode 121, the dielectric layer 123, and the second electrode 122 that constitute the touch sensor 120. The insulating layer 125 covers the step of the touch sensor 120 and functions as a planarization layer for making the thickness of the color filter 184 uniform. Also, an insulating layer 125 is provided to cover the first electrode 121, the dielectric layer 123, and the second electrode 122 that constitute the touch sensor 120. The insulating layer 125 covers the step of the touch sensor 120 and functions as a planarization layer for making the thickness of the color filter 184 uniform. Also, an insulating layer 125 is provided to cover the first electrode 121, the dielectric layer 123, and the second electrode 122 that constitute the touch sensor 120. The insulating layer 125 covers the step of the touch sensor 120 and functions as a planarization layer for making the thickness of the color filter 184 uniform.

[0085] Also, the insulating layer 125 has a function of alleviating parasitic capacitance that is formed between the wirings and electrodes that constitute the touch sensor 120 and the wirings and electrodes included in the display device 110. Insulation Also, the insulating layer 125 has a function of alleviating parasitic capacitance that is formed between the wirings and electrodes that constitute the touch sensor 120 and the wirings and electrodes included in the display device 110. Insulation As the layer 125, it is preferable to use an organic material with a low relative permittivity. Also, the insulating layer 125 is, for example, set to have a thickness of 1 μm or more and 20 μm or less, preferably 1 μm or more and 10 μm or less, which is preferable because it can simultaneously achieve thinning of the touch panel 100 and relaxation of parasitic capacitance.

[0086] A color filter 184 is formed in a region overlapping with the light-emitting element 180 on the insulating layer 125.

[0087] The color filter 184 is provided for the purpose of adjusting the color of light emitted from the pixel and enhancing color purity. For example, when a white light-emitting element is provided as the light-emitting element 180, full-color display can be achieved by using a plurality of pixels provided with color filters of different colors. In this case, three-color color filters of red (R), green (G), and blue (B) may be used, or four colors including yellow (Y) may be used. Also, in addition to R, G, B (and Y ), white (W) pixels may be used to make it four colors (or five colors).

[0088] Also, a black matrix 185 is provided between adjacent color filters 184. The black matrix 185 blocks light leaking from adjacent pixels and suppresses color mixing between adjacent pixels. The black matrix 185 may be arranged only between adjacent pixels with different emission colors and not provided between pixels of the same color. Here, by providing the end portion of the color filter 184 to overlap with the black matrix 185, light leakage can be suppressed. The black matrix 185 can use a material that blocks light and can be formed using a metal material or a resin material containing a pigment, etc. Note that as shown in Fig. 2(A), ​​​​The black matrix 185 is provided in a region other than the display unit 111 such as the drive circuit 112 as described above. This is preferable because it can suppress unintentional light leakage due to guided light or the like.

[0089] As shown in Fig. 2(A), the first electrode 121 and the second electrode 122 constituting the touch sensor 120 are arranged on the second substrate 102 side, and the color filter 184 is arranged on the side closer to the light-emitting element 180. This configuration is preferable. By doing so, the distance between the touch sensor 120 and the touch surface can be reduced, and the sensitivity of the touch sensor 120 can be improved. Furthermore, by reducing the distance between the color filter 184 and the light-emitting element 180, it is possible to suppress the light emitted from the light-emitting element 180 from leaking into the color filter 184 of an adjacent pixel.

[0090] It is preferable to use a material that suppresses the diffusion of impurities from the outside for the insulating layer 171 and the insulating layer 172. For example, oxides, nitrides, or oxynitrides of semiconductors such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, or inorganic insulating materials such as metal oxides, metal nitrides, and metal oxynitrides such as aluminum oxide, aluminum nitride, and aluminum oxynitride are preferably used. Alternatively, a laminated film of such an inorganic insulating material or a laminated film of an inorganic insulating material and an organic insulating material may be used.

[0091] The wiring 132 is provided on the insulating layer 171. An insulating layer 176 and a conductive layer 166 are provided on the wiring 132. The conductive layer 166 is electrically connected to the wiring 132 through an opening provided in the insulating layer 176. Here, in Fig. 2(A), the wiring 132 is formed by processing the same conductive film as the source electrode and the drain electrode of the transistor, and the conductive layer 166 shows an example formed by processing the same conductive film as the first electrode 181 of the light-emitting element 180 In addition, the wiring 131 in FIG. 1 is preferably configured in the same manner as the wiring 132 .

[0092] On the second substrate 102 side, the electrode 121 of the touch sensor 120 extends to a region overlapping with the conductive layer 1 66 and is provided, and its upper surface (the surface facing the conductive layer 166) includes a portion where no structure other than the adhesive layer is provided. Although not shown, the same applies to the electrode 122 .

[0093] The electrode 121 of the touch sensor 120 and the conductive layer 166 are electrically connected by the conductive particles 165 . The conductive particles 165 are provided so as to be dispersed in the adhesive layer 151 . Therefore, the electrode 121 and the wiring 132 are electrically connected by the conductive particles 165 and the conductive layer 166 . Also, the electrode 122 and the wiring 131 in FIG. 1 are similarly electrically connected by the conductive particles 165

[0094] As the conductive particles 165, it is preferable to use particles whose surfaces such as organic resin or silica are coated with a conductive material such as a metal material or an alloy material . Using nickel or gold as the metal material is preferable because the contact resistance can be reduced . Also, it is preferable to use particles coated with two or more kinds of metal materials in layers, such as coating nickel with gold . Alternatively, conductive particles 165 may be particles of a conductive material .

[0095] The conductive particles 165 sandwiched between the electrode 121 and the conductive layer 166 are preferably deformed into a crushed shape by the pressure applied in the vertical direction. With such a configuration, the conductivity​​ The contact area between the conductive particles 165 and the electrode 121 (or electrode 122) or the conductive layer 166 is increased, so that the electrical resistance in these connections can be reduced. In the schematic cross-sectional view shown in Fig. 2(A), for the sake of convenience, the cross-sectional shape of the conductive particles 165 is illustrated as an elliptical shape having a major axis in a direction perpendicular to the substrate. However, in many actual cases, its cross-sectional shape is circular, or an elliptical shape having a major axis component in a direction parallel to the substrate. Fig. 2(B) shows an example in which the cross-section of the conductive particles 165 is an elliptical shape having a major axis component in a direction parallel to the substrate.

[0096] At the outer peripheral portion of the substrate 101, a part of the wiring 132 constitutes the connection terminal 156. In Fig. 2(A), as the connection terminal 156, a case is shown where it has a laminated structure of a conductive layer obtained by processing a conductive film the same as the gate electrode of the transistor and a part of the wiring 132. In this way, by making the connection terminal 156 have a laminated structure of a plurality of layers, the mechanical strength when the FPC 143 is pressure-bonded can be increased. The connection terminal 156 and the FPC 143 are electrically connected via the connection layer 157. As the connection layer 157, an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), etc. can be used. :Anisotropic Conductive Film) or an anisotropic conductive paste (ACP:Anisotropic Conductive Paste) and the like can be used.

[0097] In addition, the wiring 144 electrically connected to the display unit 111 or the drive circuit 112 is routed to the other outer peripheral portion of the substrate 101. Also, at the outer peripheral portion of the substrate 101, a part of the wiring 144 constitutes a part of the connection terminal 155. The connection terminal 155 is the same as the connection terminal 1 described above. ​​​​​The same configuration as that of 56 can be used. The connection terminal 155 is electrically connected to FP and C141 via the connection layer 158.

[0098] Here, the first substrate 101 and the insulating layer 171 are adhered by the adhesive layer 152. Also, the second substrate 102 and the insulating layer 172 are adhered by the adhesive layer 153.

[0099] As the adhesive layers 152 and 153, the same material as the adhesive layer 151 can be used. As each adhesive layer, curable resins such as thermosetting resins, photocurable resins, and two-component curable resins can be used. For example, resins such as those having acrylic, urethane, epoxy, or siloxane bonds can be used.

[0100] Here, it is preferable to use the same material for at least two, preferably all, of the adhesive layer 151, the adhesive layer 152, and the adhesive layer 153. By using the same material for these adhesive layers, it becomes possible to equalize the linear thermal expansion coefficients, and even when the heat during the manufacturing process or the temperature during use changes, it is possible to suppress the touch panel 100 from bending unintentionally. Moreover, the range of temperature that guarantees stable operation of the touch panel can be widened.

[0101] Also, it is preferable that the thicknesses of at least two, preferably all, of the adhesive layer 151, the adhesive layer 152, and the adhesive layer 153 are approximately equal. For example, among the thicknesses of two of the above adhesive layers, the smaller thickness should be 50% or more, preferably 80% or more, more preferably 90% or more of the larger thickness.

[0102] Next, the adhesive layers 152 and 153, similar to the adhesive layer 151, have a thickness of 50 nm or more and 10 μm or less, preferably 50 nm or more and 5 μm or less, more preferably 100 nm or more and 3 μm or less It is preferably thin enough to have the following regions. By making the thicknesses of these three adhesive layers thin, the thickness of the touch panel 100 can be reduced, and a touch panel with excellent flexibility can be realized.

[0103] Here, a configuration in which neither or both of the adhesive layer 152 and the adhesive layer 153 are provided may be employed. Fig. 5 shows a case where neither the adhesive layer 152 nor the adhesive layer 153 is provided. In Fig. 5, an insulating layer 171 is provided in contact with the upper surface of the flexible first substrate 101, and an insulating layer 172 is provided in contact with the upper surface of the second substrate 102. Here, a configuration without the adhesive layer 152 and the adhesive layer 153 is shown with respect to the configuration shown in Fig. 2(A). However, a configuration in which neither or either one or both of the adhesive layer 152 or the adhesive layer 153 are not provided may be employed with respect to the configurations shown in Fig. 2(A), Fig. 3, Fig. 4, etc.

[0104] It is preferable that a protective layer 178 is provided on the surface of the substrate 102. The protective layer 178 can also be called a ceramic coat and has a function of protecting the surface of the substrate 102 when operating the touch panel 100 with a finger or a stylus, etc. As the protective layer 178, for example, inorganic insulating materials such as silicon oxide, aluminum oxide, yttrium oxide, and yttria-stabilized zirconia ( YSZ) can be used. The protective layer 178 can be formed by a sputtering method, a sol-gel method, or the like. In particular, when the protective layer 178 is formed using the aerosol deposition method described later, a highly dense film can be formed, and the mechanical strength can be increased, which is preferable. ​

[0105] Here, a method for forming a flexible touch panel will be described.

[0106] Here, for the sake of convenience, a configuration including pixels and a driving circuit, a configuration including optical members such as color filters or a configuration including a touch sensor will be referred to as an element layer. The element layer includes, for example, a display element and may include wirings electrically connected to the display element, transistors used for pixels and circuits and other elements.

[0107] Also, here, a support having an insulating surface on which the element layer is formed will be referred to as a base material.

[0108] As a method for forming an element layer on a base material having a flexible insulating surface, there are a method of directly forming an element layer on the base material and a method of forming an element layer on a support base material having a rigidity different from that of the base material and then peeling the element layer from the support base material and transferring the element layer to the base material.

[0109] When the material constituting the base material has heat resistance against the heat applied in the element layer forming process , it is preferable to directly form the element layer on the base material because the process is simplified. At this time, when forming the element layer with the base material fixed to the support base material, it is preferable because conveyance within the apparatus and between apparatuses becomes easy.

[0110] Also, when using the method of transferring to the base material after forming the element layer on the support base material, first, a release layer and an insulating layer are laminated on the support base material, and the element layer is formed on the insulating layer. Subsequently, the support base material and the element layer are peeled and transferred to the base material. At this time, a material that causes peeling at the interface between the support base material and the release layer, the interface between the release layer and the insulating layer, or within the release layer may be selected. ​​​​​

[0111] For example, a layer containing a high melting point metal material such as tungsten as a peeling layer and an oxide layer of the metal material A layer containing a silicon nitride layer or a silicon oxynitride layer is laminated on the peeling layer as an insulating layer. It is preferable to use a layer in which a plurality of high melting point metal materials are laminated. This is preferable because it increases the degree of freedom.

[0112] Peeling can be achieved by applying mechanical force, etching the peeling layer, or by delaminating the peeling interface. The peeling may be performed by dropping a liquid on a portion of the surface and allowing it to penetrate into the entire peeling interface. Alternatively, the peeling may be performed by applying heat to the peeling interface, utilizing the difference in thermal expansion.

[0113] In addition, when peeling is possible at the interface between the support substrate and the insulating layer, it is not necessary to provide a peeling layer. For example, glass is used as the support substrate, and an organic resin such as polyimide is used as the insulating layer. A part of the organic resin is locally heated using a laser beam or the like to form a peeling starting point. The separation may be performed at the interface between the glass and the insulating layer. A metal layer is provided between the edge layers, and a current is passed through the metal layer to heat the metal layer, The separation may be performed at the interface between the metal layer and the insulating layer. At this time, the insulating layer made of an organic resin is It can be used as a substrate.

[0114] Examples of flexible substrates include polyethylene terephthalate (PET), poly Polyester resins such as ethylene naphthalate (PEN), polyacrylonitrile resins, Polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethylene - Polysulfone (PES) resin, polyamide resin, cycloolefin resin, polystyrene Resins, polyamideimide resins, polyvinyl chloride resins, etc. may be mentioned. In particular, it is preferable to use a material with a low coefficient of linear thermal expansion. For example, a polyamideimide resin, polyimide resin, PET, etc. with a coefficient of linear thermal expansion of 30 ppm / K or less can be preferably used. Also, a substrate (also referred to as a prepreg) impregnated with resin in a fibrous body, or a substrate in which an inorganic filler is mixed with an organic resin to reduce the coefficient of linear thermal expansion can also be used.

[0115] When a fibrous body is included in the above materials, the fibrous body uses high-strength fibers of organic or inorganic compounds. Specifically, high-strength fibers refer to fibers with a high tensile elastic modulus or Young's modulus. Representative examples include polyvinyl alcohol-based fibers, polyester-based fibers, polyamide-based fibers, polyethylene-based fibers, aramid-based fibers, polyphenylene benzobisoxazole fibers, glass fibers, or carbon fibers. As glass fibers, glass fibers using E glass, S glass, D glass, Q glass, etc. may be mentioned. These are used in the state of woven fabric or non-woven fabric, and a structure in which this fibrous body is impregnated with resin and the resin is cured may be used as a flexible substrate. As a flexible substrate, using a structure composed of a fibrous body and resin is preferable because the reliability against breakage due to bending or local pressing is improved.

[0116] The touch panel 100 according to one aspect of the present invention has a configuration in which a display device 1 10 and a touch sensor 120 are provided between a pair of flexible substrates. Therefore, it is possible to arrange the display device 110 and the touch sensor 120 at the central portion in the thickness direction of the touch panel 100. As a result, the influence of the bending stress generated when the touch panel 100 is bent is suppressed from reaching the display device 110 and the touch sensor 120, so that defects such as breakage due to bending can be suppressed, and a highly reliable touch panel 100 can be realized.

[0117] Furthermore, the touch panel 100 according to one aspect of the present invention has a configuration in which a terminal for connecting the wiring of the touch sensor 120 and the FPC is arranged on the substrate side where the display device 110 is provided. Furthermore, by arranging the terminal in a region different from the region where the drive circuit of the display device 110 is provided on the outer peripheral portion of the touch panel, the degree of freedom in the position where the FPC is arranged can be increased.

[0118] Note that the positions of the FPCs 141, 142, and 143 are not limited to the configuration shown in FIG. 1, and may be appropriately changed according to the shape and specifications of the housing of an electronic device or the like in which the touch panel 100 is incorporated. For example, as shown in FIG. 6(A), the FPC 142 electrically connected to the wiring 131 may be arranged on the side where the FPC 143 is provided. Also, in FIG. 6(A), the FPCs 142 and 143 are provided individually, but for example, as shown in FIG. 6(B), these may be combined into one FPC 140. Also, although not shown, the FPCs 142 and 143 may be arranged on the side where the FPC 141 of the first substrate 101 is provided.

[0119] Note that the display device according to one aspect of the present invention can use an active matrix method in which the pixels have active elements, or a passive matrix method in which the pixels do not have active elements.

[0120] In the active matrix method, as active elements (active elements, non-linear elements), not only transistors, but also various active elements (active elements, non-linear elements) can be used. For example, it is also possible to use MIM (Metal Insulator Metal), or TFD (Thin Film Diode), etc. Since these elements have fewer manufacturing processes, it is possible to reduce the manufacturing cost or improve the yield. Or, since these elements are small in size, the aperture ratio can be improved, and low power consumption and high brightness can be achieved.

[0121] As something other than the active matrix method, it is also possible to use a passive matrix type that does not use active elements (active elements, non-linear elements). ) Since it does not use active elements (active elements, non-linear elements) and has fewer manufacturing processes, it is possible to reduce the manufacturing cost or improve the yield. Or, since it does not use active elements (active elements, non-linear elements), the aperture ratio can be improved, and low power consumption, high brightness, etc. can be achieved.

[0122] [Modification Example] Below, the configuration of a touch panel with a partially different configuration from the above will be described. Note that the description of the overlapping parts with the above will be omitted, and only the main differences will be described.

[0123] Fig. 7(A) shows a schematic cross-sectional view of the touch panel exemplified below.

[0124] The configuration shown in Fig. 7(A) is mainly different from the configuration exemplified in Fig. 2(A) in that it includes a bottom emission type light emitting element and the position of the touch sensor is different.

[0125] On the first substrate 101, an insulating layer 172 is provided via an adhesive layer 192, and on top of the insulating layer 17 2, electrodes 121, 122 and a dielectric layer 123 etc. that constitute the touch sensor 120 are provided. Also, the electrodes 121, 122 and the dielectric layer 123 etc. are provided below the insulating layer 171 via an adhesive layer 191. In other words, the touch panel shown in Fig. 7(A) has a configuration in which the touch sensor 120 is provided between the display device 110 and the first substrate 101.

[0126] Also, the light-emitting element 180 in Fig. 7(A) applies a bottom-emission type light-emitting element. That is, the light emitted from the light-emitting element 180 is extracted toward the first substrate 101 side. The color filter 184 is arranged closer to the first substrate 101 side than the light-emitting element 180. In Fig. 7( A), an example of being arranged between the inorganic insulating layer covering the transistor and the insulating layer 176 is shown. Note that a black matrix may be provided covering the transistor and the wiring.

[0127] On the first substrate 101, connection terminals 156 between the electrode 121 of the touch sensor 120 and the FPC 143 (or between the electrode 122 and the FPC 142) are provided. In the region where the connection terminals 156 are provided, there are no structures above the adhesive layer 191 and the adhesive layer 191, and at least a part of the upper surface of the connection terminal 156 is exposed. As shown in Fig. 7(A), the first substrate 101 preferably extends outward more than the second substrate 102 at least in the direction in which the connection terminals 156 are provided.

[0128] Also, on the lower surface (the surface on the light-emitting element 180 side) of the second substrate 102, an insulating layer 173 is provided. It is preferable. As the insulating layer 173, it is preferable to use an inorganic insulating material similar to the insulating layer 171 or the insulating layer 172.

[0129] Since the first substrate 101 side serves as the display surface and the operation surface, it is preferable to provide a protective layer 178 on the surface of the first substrate 101.

[0130] Also, as shown in FIG. 7(B), a configuration may be adopted in which the adhesive layer 19 2 is not provided between the first substrate 101 and the insulating layer 172, and the insulating layer 172 is directly formed on the upper surface of the first substrate 101. That is also acceptable.

[0131] The adhesive layer 191 and the adhesive layer 192 may have the same configuration as the above-described adhesive layer 152 or adhesive layer 153.

[0132] Note that the configuration of the transistor and its periphery is not limited to the configuration shown in FIG. 7, and the laminated structure of the transistor structure and its peripheral insulating layers described above, such as the transistor configuration shown in FIGS. 2 to 4, can be adopted. That is the explanation about the modification example.

[0133] This is the description of the modification example.

[0134] This embodiment can be implemented in appropriate combination with at least a part of other embodiments described in this specification. That is possible.

[0135] (Embodiment 2) In this embodiment, an example of a driving method for a touch panel according to an aspect of the present invention will be described with reference to the drawings. That is described below.

[0136] [Example of sensor detection method] FIG. 8(A) is a block diagram showing the configuration of a mutual capacitance type touch sensor. FIG. 8(A ) shows the pulse voltage output circuit 501 and the current detection circuit 502. Note that in FIG. 8(A) , the electrode 121 to which a pulse voltage is applied and the electrode 122 for detecting a change in current are each shown as six wirings of X1-X6 and Y1-Y6 respectively. Further, FIG. 8(A) shows the capacitor 503 formed by the superposition of the electrode 121 and the electrode 122. Note that the functions of the electrode 121 and the electrode 122 may be replaced with each other.

[0137] The pulse voltage output circuit 501 is a circuit for sequentially applying a pulse voltage to the wirings of X1-X6. When a pulse voltage is applied to the wirings of X1-X6, an electric field is generated between the electrode 121 and the electrode 122 that form the capacitor 503. By utilizing the fact that the electric field generated between these electrodes causes a change in the mutual capacitance of the capacitor 503 due to shielding or the like, the proximity or contact of the object to be detected can be detected.

[0138] The current detection circuit 502 is a circuit for detecting a change in the current in the wirings of Y1 to Y6 due to a change in the mutual capacitance in the capacitor 503. In the wirings of Y1 to Y6, there is no change in the detected current value when there is no proximity or contact of the object to be detected, but when the mutual capacitance decreases due to the proximity or contact of the object to be detected, a change in which the current value decreases is detected. Note that the detection of the current may be performed using an integration circuit or the like.

[0139] Note that in the above-described Embodiment 1, either one or both of the pulse voltage output circuit 501 and the current detection circuit 50 2 may be formed on the first substrate 101. For example, forming them simultaneously with the display unit 111 or the drive circuit 112 can simplify the process and, in addition, touch ​​​​​​​It is preferable because it can reduce the number of components of the electronic device to which the panel 100 is applied. Also, Either one or both of the pulse voltage output circuit 501 and the current detection circuit 502 may be mounted on an FPC (FPC142, FPC143 (or FPC140)) that is electrically connected to the touch sensor 120 by a COF method.

[0140] In particular, as a transistor formed on the first substrate 101, when crystalline silicon such as polycrystalline silicon or single-crystalline silicon is used for the semiconductor layer in which the channel is formed, the driving ability of circuits such as the pulse voltage output circuit 501 and the current detection circuit 502 is improved, and the sensitivity of the touch sensor can be improved.

[0141] Next, FIG. 8(B) shows a timing chart of input / output waveforms in the mutual capacitance type touch sensor shown in FIG. 8(A). In FIG. 8(B), it is assumed that the object to be detected in each matrix is detected within one frame period. Also, FIG. 8(B) shows two cases: when the object to be detected is not detected (non-touch) and when the object to be detected is detected (touch). For the wirings of Y1 - Y6, waveforms corresponding to the current values to be detected are shown.

[0142]

[0143] Pulse voltages are sequentially applied to the wirings of X1 - X6, and the waveforms in the wirings of Y1 - Y6 change according to the pulse voltages. When there is no proximity or contact of the object to be detected, the waveforms of Y1 - Y6 change uniformly according to the voltage changes in the wirings of X1 - X6. On the other hand, at the location where the object to be detected is in proximity or contact, since the current value decreases, the waveform of the voltage value corresponding thereto also changes.

[0143]

[0143] Thus, by detecting the change in mutual capacitance, the proximity or contact of the object to be detected can be detected. This can be achieved.

[0144] Also, in Fig. 8(A), the configuration of a touch sensor using a passive matrix method in which only the capacitance 503 is provided at the intersection of the wirings is shown. However, it may also be an active matrix method touch sensor including a transistor and a capacitor. Fig. 9 shows an example of one sensor circuit included in the active matrix method touch sensor. The sensor circuit has a capacitance 503, a transistor 511, a transistor 512, and a transistor 513. The transistor 513 has a signal G2 applied to its gate, a voltage VRES applied to one of its source or drain, and the other is electrically connected to one electrode of the capacitance 503 and the gate of the transistor 511. One of the source or drain of the transistor 511 is electrically connected to one of the source or drain of the transistor 512, and a voltage VSS is applied to the other. The transistor 512 has a signal G1 applied to its gate, and the other of its source or drain is electrically connected to the wiring ML. A voltage VSS is applied to the other electrode of the capacitance 503. Next, the operation of the sensor circuit will be described. First, a potential that turns on the transistor 513 is applied as the signal G2, so that a potential corresponding to the voltage VRES is applied to the node n to which the gate of the transistor 511 is connected. Then, a potential that turns off the transistor 513 is applied as the signal G2, so that the potential of the node n is held.

[0145]

[0146]

[0147]

[0146] Subsequently, the operation of the sensor circuit will be described. First, a potential that turns on the transistor 513 is applied as the signal G2, so that a potential corresponding to the voltage VRES is applied to the node n to which the gate of the transistor 511 is connected. Then, a potential that turns off the transistor 513 is applied as the signal G2, so that the potential of the node n is held.

[0147]

[0147] Subsequently, due to the proximity or contact of a detected object such as a finger, the mutual capacitance of capacitor 503 changes accordingly. As a result, the potential of node n changes from VRES.

[0148] In the read operation, a potential that turns on transistor 512 is applied to signal G1. The current flowing through transistor 511 according to the potential of node n, that is, the current flowing through wiring ML changes. By detecting this current, the proximity or contact of the detected object can be detected. is possible.

[0149] As transistors 511, 512, and 513, it is preferable to use transistors in which an oxide semiconductor is applied to the semiconductor layer in which the channel is formed. In particular, by applying an oxide semiconductor to the semiconductor layer forming the channel of transistor 513, it becomes possible to hold the potential of node n for a long period of time, and the frequency of the operation (refresh operation) of supplying VRES to node n again can be reduced.

[0150] [Example of Driving Method of Display Device] FIG. 10(A) is a block diagram showing the configuration of a display device as an example. In FIG. 10(A), a gate drive circuit GD, a source drive circuit SD, and pixels pix are shown. In FIG. 10(A), gate lines x_1 to x_m (m is a natural number) electrically connected to the gate drive circuit GD and source lines y_1 to y_n (n is a natural number) electrically connected to the source drive circuit SD are shown. Corresponding to these, in pixel pix, signs (1,1) to (n,m) are attached respectively.

[0151] Next, FIG. 10(B) shows the gate lines and source lines in the display device shown in FIG. 10(A). ​​​​​​It is a timing chart diagram of the signal applied to. In FIG. 10(B), it is shown separately for the case of rewriting the data signal every frame period and the case of not rewriting the data signal. When rewriting the data signal every frame period and when not rewriting the data signal. Note that in FIG. 10(B), periods such as the retrace period are not considered.

[0152] When rewriting the data signal every frame period, scan signals are sequentially applied to the gate lines x_1 to x_m. During the horizontal scan period 1H which is the period when the scan signal is at the H level, the data signal D is applied to the source lines y_1 to y_n of each column.

[0153] When not rewriting the data signal every frame period, the scan signals applied to the gate lines x_1 to x_m are stopped. Also, during the horizontal scan period 1H, the data signals applied to the source lines y_1 to y_n of each column are stopped. When not rewriting the data signal every frame period, the scan signals applied to the gate lines x_1 to x_m are stopped. Also, during the horizontal scan period 1H, the data signals applied to the source lines y_1 to y_n of each column are stopped. When not rewriting the data signal every frame period, the scan signals applied to the gate lines x_1 to x_m are stopped. Also, during the horizontal scan period 1H, the data signals applied to the source lines y_1 to y_n of each column are stopped.

[0154] The driving method of not rewriting the data signal every frame period is particularly effective when an oxide semiconductor is applied to the semiconductor layer in which a channel is formed as a transistor of the pixel. When an oxide semiconductor is applied to the transistor, it is possible to make the off-current extremely small compared to a transistor to which a semiconductor such as silicon is applied. Therefore, it is possible to hold the data signal written in the previous period without rewriting the data signal every frame period, and for example, it is also possible to hold the gradation of the pixel for 1 second or more, preferably 5 seconds or more. When an oxide semiconductor is applied to the transistor, it is possible to make the off-current extremely small compared to a transistor to which a semiconductor such as silicon is applied. Therefore, it is possible to hold the data signal written in the previous period without rewriting the data signal every frame period, and for example, it is also possible to hold the gradation of the pixel for 1 second or more, preferably 5 seconds or more. When an oxide semiconductor is applied to the transistor, it is possible to make the off-current extremely small compared to a transistor to which a semiconductor such as silicon is applied. Therefore, it is possible to hold the data signal written in the previous period without rewriting the data signal every frame period, and for example, it is also possible to hold the gradation of the pixel for 1 second or more, preferably 5 seconds or more. When an oxide semiconductor is applied to the transistor, it is possible to make the off-current extremely small compared to a transistor to which a semiconductor such as silicon is applied. Therefore, it is possible to hold the data signal written in the previous period without rewriting the data signal every frame period, and for example, it is also possible to hold the gradation of the pixel for 1 second or more, preferably 5 seconds or more. When an oxide semiconductor is applied to the transistor, it is possible to make the off-current extremely small compared to a transistor to which a semiconductor such as silicon is applied. Therefore, it is possible to hold the data signal written in the previous period without rewriting the data signal every frame period, and for example, it is also possible to hold the gradation of the pixel for 1 second or more, preferably 5 seconds or more. When an oxide semiconductor is applied to the transistor, it is possible to make the off-current extremely small compared to a transistor to which a semiconductor such as silicon is applied. Therefore, it is possible to hold the data signal written in the previous period without rewriting the data signal every frame period, and for example, it is also possible to hold the gradation of the pixel for 1 second or more, preferably 5 seconds or more.

[0155] Also, when applying polycrystalline silicon to the semiconductor layer in which a channel is formed as a transistor of the pixel, it is necessary to increase the size of the holding capacitance of the pixel in advance. Also, when applying polycrystalline silicon to the semiconductor layer in which a channel is formed as a transistor of the pixel, it is necessary to increase the size of the holding capacitance of the pixel in advance. is preferable. The larger the holding capacitance is, the longer the gradation of the pixel can be held. The magnitude of the holding capacitance may be set according to the leakage current of the transistor or display element electrically connected to the holding capacitance. For example, the holding capacitance per pixel may be set to 5 fF or more and 5 pF or less, preferably 10 fF or more and 5 pF or less, more preferably 20 fF or more and 1 pF or less. In this case, the data signal written in the previous period can be held without rewriting the data signal every frame period. For example, the gradation of the pixel can be held over a period of several frames or several tens of frames.

[0156] [Examples of driving methods for display devices and touch sensors] FIGS. 11(A) to (D) are diagrams for explaining the operations in consecutive frame periods when, as an example, the touch sensor described in FIGS. 8(A) and (B) and the display device described in FIGS. 10(A) and (B) are driven for 1 sec. (1 second). In FIG. 11(A), the case where one frame period of the display device is 16.7 ms (frame frequency: 60 Hz) and one frame period of the touch sensor is 16.7 ms (frame frequency: 60 Hz) is shown. In the touch panel according to the present embodiment, the operations of the display device and the touch sensor are independent of each other, and the touch detection period can be set parallel to the display period. Therefore, as shown in FIG. 11(A), the one frame period of both the display device and the touch sensor can be set to 16.7 ms (frame frequency: 60 Hz). The frame frequencies of the touch sensor and the display device may be different. For example, as shown in FIG. 11(B), the one frame period of the display device

[0157] In the touch panel according to the present embodiment, the operations of the display device and the touch sensor are independent of each other, and the touch detection period can be set parallel to the display period. Therefore, as shown in FIG. 11(A), the one frame period of both the display device and the touch sensor can be set to 16.7 ms (frame frequency: 60 Hz). The frame frequencies of the touch sensor and the display device may be different. For example, as shown in FIG. 11(B), the one frame period of the display device is set to 16.7 ms (frame frequency: 60 Hz), and the one frame period of the touch sensor is set to 8.3 ms (frame frequency: 120 Hz). Set it to 8.3 ms (frame frequency: 120 Hz), and the one-frame period of the touch sensor Can also be set to 16.7 ms (frame frequency: 60 Hz). Although not shown , the frame frequency of the display device may be set to 33.3 ms (frame frequency: 30 Hz) .

[0158] In addition, the configuration is such that the frame frequency of the display device can be switched. When displaying a moving image, the frame Frequency is increased (for example, 60 Hz or more or 120 Hz or more), and when displaying a still image The frame frequency is decreased (for example, 60 Hz or less, 30 Hz or less, or 1 Hz or less ). By doing so, the power consumption of the display device can be suppressed. Also, the frame Frequency of the touch sensor can be configured to be switchable, and the frame frequency can be Made different between standby and when a touch is detected.

[0159] In addition, the touch panel in the present embodiment holds the data signal rewritten in the previous period without Rewriting the data signal in the display device, so that the one-frame period of the display device Can be made longer than 16.7 ms. Therefore, as shown in Fig. 11(C) , the one-frame period of the display device is set to 1 sec. (frame frequency: 1 Hz), and the One-frame period of the touch sensor can be set to 16.7 ms (frame frequency: 60 Hz) As well.

[0160] In addition, when the touch panel in the present embodiment performs the driving shown in Fig. 11(C), it can Continuously drive the touch sensor. Therefore, as shown in Fig. 11(D), at the timing when the proximity or contact of the detected object in the Touch sensor is detected, the data The signal of the display device can also be rewritten.

[0161] Here, during the sensing period of the touch sensor, the data signal of the display device is rewritten. When driving the display device, noise may be transmitted to the touch sensor, which may reduce the sensitivity of the touch sensor. Therefore, in particular, it is preferable to drive so as to shift the rewriting period of the data signal of the display device and the sensing period of the touch sensor.

[0162] In FIG. 12(A), an example in which the rewriting of the data signal of the display device and the sensing of the touch sensor are performed alternately is shown. Further, in FIG. 12(B), an example in which the sensing of the touch sensor is performed once every two times of performing the rewriting operation of the data signal of the display device is shown. Note that the present invention is not limited to this, and the sensing of the touch sensor may be performed once every three or more rewriting operations.

[0163] When an oxide semiconductor is used for the semiconductor layer in which a channel is formed in the transistor applied to the pixel of the display device, the off-current can be extremely reduced, so that the frequency of rewriting the data signal can be sufficiently reduced. Specifically, after rewriting the data signal, it is possible to provide a sufficiently long pause period until the next rewriting of the data signal. The pause period can be, for example, 0.5 seconds or more, 1 second or more, or 5 seconds or more. The upper limit of the pause period is limited by the capacitance connected to the transistor and the leakage current of the display element or the like, but can be, for example, about 1 minute or less, 10 minutes or less, 1 hour or less, or 1 day or less.

[0164] In FIG. 12(C), an example in which the data signal of the display device is rewritten at a frequency of once every 5 seconds is shown. ​​​​​​​​​​​​​is shown. In FIG. 12(C), after the display device rewrites the data signal, a pause period during which the operation stops is provided until the next data signal rewrite operation. During the pause period, the touch sensor can be driven at a frame frequency of i Hz (i is equal to or higher than the frame frequency of the display device, here 0 .2 Hz or higher). Also, as shown in FIG. 12(C), if the sensing of the touch sensor is performed during the pause period and not during the rewrite period of the data signal of the display device, it is preferable because the sensitivity of the touch sensor can be improved. Further, as shown in FIG. 12(D), performing the rewrite of the data signal of the display device and the sensing of the touch sensor simultaneously can simplify the signal for driving.

[0165] Also, during the pause period when the rewrite operation of the data signal of the display device is not performed, the supply of only the signal to the drive circuit may be stopped, or in addition to this, the supply of the power potential may also be stopped, so that power consumption can be further reduced.

[0166] As shown in Embodiment 1, a touch panel according to one aspect of the present invention has a configuration in which a display device and a touch sensor are sandwiched between two flexible substrates, and the distance between the display device and the touch sensor can be made extremely close. At this time, noise during the driving of the display device is likely to propagate to the touch sensor, and there is a risk that the sensitivity of the touch sensor will decrease. However, by applying the driving method exemplified in this embodiment, a touch panel that achieves both thinning and high detection sensitivity can be realized.

[0167] (Embodiment 3) In this embodiment, a configuration of a touch panel according to one aspect of the present invention and an example of a driving method will be described with reference to the drawings.

[0168] [Touch panel configuration] FIG. 13 is a block diagram showing a configuration example of a touch panel to be exemplified below. As shown in the figure, the touch panel 80 includes a display device 800, a control circuit 810, a counter circuit 820, It has a touch sensor 850.

[0169] The touch panel 80 receives an image signal (Video) which is digital data, and a display device. A synchronization signal (SYNC) for controlling rewriting of the screen of the device 800 is input. Examples of the signals include a horizontal synchronization signal (Hsync), a vertical synchronization signal (Vsync), and There are reference clock signals (CLK), etc.

[0170] The display device 800 includes a display unit 801, a gate driver 802, and a source driver 803. The display unit 801 has a plurality of pixels PIX. The pixels PIX in the same row are shared The gate line L_X is connected to the gate driver 802, and the pixels PIX in the same column share a common The source line L_Y connects to the source driver 803 .

[0171] The display device 800 includes a high level potential (VH), a low level potential (VL), and a power supply The high power supply potential (VDD) and the low power supply potential (VSS) are supplied as potentials. High level The potential (VH) is supplied to each pixel PIX of the display unit 801 via the wiring L_H. The low level potential (VL) is supplied to each pixel PIX of the display unit 801 via the wiring L_L. will be done.

[0172] The source driver 803 processes the input image signal, generates a data signal, and outputs the source The gate driver 802 outputs a data signal to the line L_Y. Output a scanning signal for selecting pixel PIX to gate line L_X.

[0173] The pixel PIX has a switching element whose electrical connection to the source line L_Y is controlled by the scanning signal. When the switching element is turned on, a data signal is written from the source line L_Y to the pixel PIX. The data signal is written.

[0174] The control circuit 810 is a circuit that controls the entire touch panel 80 and includes a circuit that generates control signals for the circuits that make up the touch panel 80. It includes a circuit that generates control signals for the circuits that make up the touch panel 80.

[0175] The control circuit 810 has a control signal generation circuit that generates control signals for the gate driver 802 and the source driver 803 from a synchronization signal (SYNC). As control signals for the gate driver 802, there are a start pulse (GSP), a clock signal (GCLK), etc., and as control signals for the source driver 803, there are a start pulse (SSP), a clock signal (SCLK), etc. For example, the control circuit 810 generates a plurality of clock signals with the same period and shifted phases as the clock signals (GCLK, SCLK). It has a control signal generation circuit that generates control signals for the gate driver 802 and the source driver 803 from a synchronization signal (SYNC). As control signals for the gate driver 802, there are a start pulse (GSP), a clock signal (GCLK), etc., and as control signals for the source driver 803, there are a start pulse (SSP), a clock signal (SCLK), etc. For example, the control circuit 810 generates a plurality of clock signals with the same period and shifted phases as the clock signals (GCLK, SCLK). As control signals for the gate driver 802, there are a start pulse (GSP), a clock signal (GCLK), etc., and as control signals for the source driver 803, there are a start pulse (SSP), a clock signal (SCLK), etc. For example, the control circuit 810 generates a plurality of clock signals with the same period and shifted phases as the clock signals (GCLK, SCLK). As control signals for the source driver 803, there are a start pulse (SSP), a clock signal (SCLK), etc. For example, the control circuit 810 generates a plurality of clock signals with the same period and shifted phases as the clock signals (GCLK, SCLK). For example, the control circuit 810 generates a plurality of clock signals with the same period and shifted phases as the clock signals (GCLK, SCLK). For example, the control circuit 810 generates a plurality of clock signals with the same period and shifted phases as the clock signals (GCLK, SCLK).

[0176] Also, the control circuit 810 controls the output of the image signal (Video) input from outside the touch panel 80 to the source driver 803. to the source driver 803.

[0177] Also, the control circuit 810 receives the sensor signal (S_touch) input from the touch sensor 850 and corrects the image signal according to the sensor signal. The correction of the image signal varies according to the sensor signal, but image processing corresponding to the touch will be performed. The control circuit 810 receives the sensor signal (S_touch) input from the touch sensor 850 and corrects the image signal according to the sensor signal. The correction of the image signal varies according to the sensor signal, but image processing corresponding to the touch will be performed. The correction of the image signal varies according to the sensor signal, but image processing corresponding to the touch will be performed.

[0178] The source driver 803 has a digital / analog conversion circuit 804 (hereinafter referred to as the D-A conversion circuit 804).) The D-A conversion circuit 804 converts the image signal into an analog signal and generates a data signal.

[0179] In addition, when the image signal input to the touch panel 80 is an analog signal, the control circuit 810 converts it into a digital signal and outputs it to the display device 800.

[0180] The image signal consists of image data for each frame. The control circuit 810 processes the image data and controls the output of the image signal to the source driver 803 based on the information obtained from the processing. Therefore, the control circuit 810 includes a motion detection unit 811 that processes the image data and detects motion from the image data for each frame. When a sensor signal is input, the image signal will be corrected based on the image data according to the sensor signal.

[0181] When the motion detection unit 811 determines that there is motion, the control circuit 810 continues to output the image signal to the source driver 803. Conversely, when it is determined that there is no motion, the control circuit 810 stops the output of the image signal to the source driver 803. Also, when it is determined again that there is motion, the output of the image signal is resumed.

[0182] Based on the determination of the motion detection unit 811, the control circuit 810 can switch between a first mode for displaying a moving image (video display) and a second mode for displaying a non-moving image (still image display) to control the display of the display unit 801. The first mode is For example, when the vertical synchronization signal (Vsync) is 60 Hz, the frame frequency is 60 Hz or higher ​​​​​​​​This is the mode to be set as the upper one. Also, the second mode is, for example, when the vertical synchronization signal (Vsync) is 60 Hz, it is the mode where the frame frequency is set to less than 60 Hz.

[0183] In the second mode, the frame frequency to be set is preferably set in advance according to the voltage holding characteristics of the pixels. For example, when it is determined in the motion detection unit 811 that there is no motion for a certain period and the output of the image signal to the source driver 803 is stopped, the voltage corresponding to the gradation of the image signal written to the pixel PIX will decrease. Therefore, it is desirable to write (also referred to as refreshing) the voltage corresponding to the gradation of the image signal of the same image every period of the frame frequency. This refreshing timing (also referred to as the refresh rate) may be configured to be performed every certain period based on the signal obtained by counting the H level of the vertical synchronization signal (Vsync) in the counter circuit 820, for example. For example, when it is determined in the motion detection unit 811 that there is no motion for a certain period and the output of the image signal to the source driver 803 is stopped, the voltage corresponding to the gradation of the image signal written to the pixel PIX will decrease. Therefore, it is desirable to write (also referred to as refreshing) the voltage corresponding to the gradation of the image signal of the same image every period of the frame frequency. This refreshing timing (also referred to as the refresh rate) may be configured to be performed every certain period based on the signal obtained by counting the H level of the vertical synchronization signal (Vsync) in the counter circuit 820, for example. For example, when the refresh rate is set to once per second in the counter circuit 820, if the frequency of the vertical synchronization signal (Vsync) is 60 Hz, the refresh may be performed based on the count signal (Count) obtained by counting the H level of the vertical synchronization signal (Vsync) 60 times. When the refresh rate is set to once every 5 seconds, if the frequency of the vertical synchronization signal (Vsync) is 60 Hz, the refresh may be performed based on the count signal (Count) obtained by counting the H level of the vertical synchronization signal (Vsync) 300 times. Also, when a sensor signal is input from the touch sensor 850 to the counter circuit 820, the counter circuit 820 forcibly switches from the second mode to the first mode according to the sensor signal. For example, when the refresh rate is set to once per second in the counter circuit 820, if the frequency of the vertical synchronization signal (Vsync) is 60 Hz, the refresh may be performed based on the count signal (Count) obtained by counting the H level of the vertical synchronization signal (Vsync) 60 times.

[0184] When the refresh rate is set to once per second in the counter circuit 820, if the frequency of the vertical synchronization signal (Vsync) is 60 Hz, the refresh may be performed based on the count signal (Count) obtained by counting the H level of the vertical synchronization signal (Vsync) 60 times. If the frequency of the vertical synchronization signal (Vsync) is 60 Hz, the refresh may be performed based on the count signal (Count) obtained by counting the H level of the vertical synchronization signal (Vsync) 60 times. When the refresh rate is set to once every 5 seconds, if the frequency of the vertical synchronization signal (Vsync) is 60 Hz, the refresh may be performed based on the count signal (Count) obtained by counting the H level of the vertical synchronization signal (Vsync) 300 times. When the refresh rate is set to once every 5 seconds, if the frequency of the vertical synchronization signal (Vsync) is 60 Hz, the refresh may be performed based on the count signal (Count) obtained by counting the H level of the vertical synchronization signal (Vsync) 300 times. (Vsync), the refresh may be performed based on the count signal (Count) obtained by counting the H level of the vertical synchronization signal (Vsync) 300 times. When the refresh rate is set to once every 5 seconds, if the frequency of the vertical synchronization signal (Vsync) is 60 Hz, the refresh may be performed based on the count signal (Count) obtained by counting the H level of the vertical synchronization signal (Vsync) 300 times. Also, when a sensor signal is input from the touch sensor 850 to the counter circuit 820, the counter circuit 820 forcibly switches from the second mode to the first mode according to the sensor signal. When a sensor signal is input from the touch sensor 850 to the counter circuit 820, the counter circuit 820 forcibly switches from the second mode to the first mode according to the sensor signal. It may be configured to switch.

[0185] Note that there are no particular restrictions on the image processing for motion detection performed by the motion detection unit 811. For example, as a motion detection method, for example, there is a method of obtaining difference data from image data between two consecutive frames. It is possible to determine the presence or absence of motion from the obtained difference data. There is also a method of detecting a motion vector, etc.

[0186] The touch sensor 850 can apply the operations and structures described in the above embodiment.

[0187] In the present embodiment, the operation of the display device and the operation of the touch sensor 850 can be performed independently of each other. Therefore, a touch sensing period can be provided in parallel with the display period. For this reason, even in a configuration where the control circuit 810 switches between the first mode and the second mode, the operation of the touch sensor can be controlled independently. Further, by synchronizing the operations of the display device 800 and the touch sensor 850 and performing the data signal rewriting operation of the display device 800 and the sensing operation of the touch sensor 850 in different periods, the sensitivity of sensing can be increased.

[0188] [Example of Pixel Configuration] FIG. 14(A) is a circuit diagram showing an example of the configuration of the pixel PIX. The pixel PIX includes a transistor TR1, a transistor TR2, a light emitting element EL, and a capacitive element CAP.

[0189] The transistor TR1 functions as a switching element that controls the electrical connection between the source line L_Y and the gate of the transistor TR2, and is controlled to be turned on and off by a scan signal input to the gate of the transistor TR1. The transistor TR2 controls the current flowing through the light emitting element EL. ​ functions as a switching element for controlling

[0190] Note that for the transistors TR1 and TR2, it is preferable to apply an oxide semiconductor or polycrystalline silicon to the semiconductor layer in which the channel is formed.

[0191] The light-emitting element EL sandwiches an EL layer containing a light-emitting organic compound between two electrodes. The luminance of the light emitted from the light-emitting element changes according to the current flowing between these two electrodes. One electrode of the light-emitting element is supplied with a low-level potential from the wiring L_L, and the other electrode is supplied with a high-level potential from the wiring L_H via the transistor TR2.

[0192] The capacitor element CAP has a function of holding the potential of the gate of the transistor TR2.

[0193] FIG. 14(B) shows an example of a pixel PIX including a liquid crystal element. The pixel PIX has a transistor TR, a liquid crystal element LC, and a capacitor element CAP.

[0194] The transistor TR is a switching element that controls the electrical connection between one electrode of the liquid crystal element LC and the source line L_Y, and is turned on and off by a scanning signal input from its gate.

[0195] Note that for the transistor TR, it is preferable to apply an oxide semiconductor or polycrystalline silicon to the semiconductor layer in which the channel is formed.

[0196] The liquid crystal element LC has two electrodes and liquid crystal. The orientation of the liquid crystal changes due to the action of the electric field between these two electrodes. Of the two electrodes of the liquid crystal element LC, one is supplied with a potential from the wiring L_Y via the transistor TR. ​​​​​​​​​One of the electrodes connected to the source line L_Y corresponds to the pixel electrode, and Vcom is applied. The other electrode connected to the common line L_com corresponds to the common electrode.

[0197] The capacitor element CAP is connected in parallel with the liquid crystal element LC. In this case, one electrode of the capacitor element is connected to the source or drain of the transistor TR, and the other electrode of the capacitor element is connected to the capacitor line L_cap to which the capacitor voltage is applied. The capacitor element CAP is connected in parallel with the liquid crystal element LC. In this case, one electrode of the capacitor element is connected to the source or drain of the transistor TR, and the other electrode of the capacitor element is connected to the capacitor line L_cap to which the capacitor voltage is applied. The capacitor element CAP is connected in parallel with the liquid crystal element LC. In this case, one electrode of the capacitor element is connected to the source or drain of the transistor TR, and the other electrode of the capacitor element is connected to the capacitor line L_cap to which the capacitor voltage is applied.

[0198] Here, examples in the case of using the liquid crystal element LC or the light emitting element EL as the display element are shown, but one aspect of the present invention is not limited thereto. Here, examples in the case of using the liquid crystal element LC or the light emitting element EL as the display element are shown, but one aspect of the present invention is not limited thereto.

[0199] For example, in this specification and the like, the display element, the display device having the display element, the light emitting element, and the light emitting device having the light emitting element can use various forms or have various elements. As an example of the display element, the display device, the light emitting element, or the light emitting device, there are an EL (electroluminescence) element (EL element including organic and inorganic substances, organic EL element, inorganic EL element), an LED (white LED, red LED, green LED, blue LED, etc.), a transistor (transistor that emits light according to current), an electron emission element, a liquid crystal element, an electronic ink, an electrophoretic element, a grating light valve (GLV), a plasma display panel (PDP), a display element using MEMS (micro-electro-mechanical system), a digital micromirror device (DMD), a DMS (digital micro shutter), a MIRASOL (registered trademark), an IMOD (interference modulation) element, a shutter type MEMS display element, a light interference type MEMS display element. For example, in this specification and the like, the display element, the display device having the display element, the light emitting element, and the light emitting device having the light emitting element can use various forms or have various elements. As an example of the display element, the display device, the light emitting element, or the light emitting device, there are an EL (electroluminescence) element (EL element including organic and inorganic substances, organic EL element, inorganic EL element), an LED (white LED, red LED, green LED, blue LED, etc.), a transistor (transistor that emits light according to current), an electron emission element, a liquid crystal element, an electronic ink, an electrophoretic element, a grating light valve (GLV), a plasma display panel (PDP), a display element using MEMS (micro-electro-mechanical system), a digital micromirror device (DMD), a DMS (digital micro shutter), a MIRASOL (registered trademark), an IMOD (interference modulation) element, a shutter type MEMS display element, a light interference type MEMS display element. For example, in this specification and the like, the display element, the display device having the display element, the light emitting element, and the light emitting device having the light emitting element can use various forms or have various elements. As an example of the display element, the display device, the light emitting element, or the light emitting device, there are an EL (electroluminescence) element (EL element including organic and inorganic substances, organic EL element, inorganic EL element), an LED (white LED, red LED, green LED, blue LED, etc.), a transistor (transistor that emits light according to current), an electron emission element, a liquid crystal element, an electronic ink, an electrophoretic element, a grating light valve (GLV), a plasma display panel (PDP), a display element using MEMS (micro-electro-mechanical system), a digital micromirror device (DMD), a DMS (digital micro shutter), a MIRASOL (registered trademark), an IMOD (interference modulation) element, a shutter type MEMS display element, a light interference type MEMS display element. For example, in this specification and the like, the display element, the display device having the display element, the light emitting element, and the light emitting device having the light emitting element can use various forms or have various elements. As an example of the display element, the display device, the light emitting element, or the light emitting device, there are an EL (electroluminescence) element (EL element including organic and inorganic substances, organic EL element, inorganic EL element), an LED (white LED, red LED, green LED, blue LED, etc.), a transistor (transistor that emits light according to current), an electron emission element, a liquid crystal element, an electronic ink, an electrophoretic element, a grating light valve (GLV), a plasma display panel (PDP), a display element using MEMS (micro-electro-mechanical system), a digital micromirror device (DMD), a DMS (digital micro shutter), a MIRASOL (registered trademark), an IMOD (interference modulation) element, a shutter type MEMS display element, a light interference type MEMS display element. For example, in this specification and the like, the display element, the display device having the display element, the light emitting element, and the light emitting device having the light emitting element can use various forms or have various elements. As an example of the display element, the display device, the light emitting element, or the light emitting device, there are an EL (electroluminescence) element (EL element including organic and inorganic substances, organic EL element, inorganic EL element), an LED (white LED, red LED, green LED, blue LED, etc.), a transistor (transistor that emits light according to current), an electron emission element, a liquid crystal element, an electronic ink, an electrophoretic element, a grating light valve (GLV), a plasma display panel (PDP), a display element using MEMS (micro-electro-mechanical system), a digital micromirror device (DMD), a DMS (digital micro shutter), a MIRASOL (registered trademark), an IMOD (interference modulation) element, a shutter type MEMS display element, a light interference type MEMS display element. For example, in this specification and the like, the display element, the display device having the display element, the light emitting element, and the light emitting device having the light emitting element can use various forms or have various elements. As an example of the display element, the display device, the light emitting element, or the light emitting device, there are an EL (electroluminescence) element (EL element including organic and inorganic substances, organic EL element, inorganic EL element), an LED (white LED, red LED, green LED, blue LED, etc.), a transistor (transistor that emits light according to current), an electron emission element, a liquid crystal element, an electronic ink, an electrophoretic element, a grating light valve (GLV), a plasma display panel (PDP), a display element using MEMS (micro-electro-mechanical system), a digital micromirror device (DMD), a DMS (digital micro shutter), a MIRASOL (registered trademark), an IMOD (interference modulation) element, a shutter type MEMS display element, a light interference type MEMS display element. For example, in this specification and the like, the display element, the display device having the display element, the light emitting element, and the light emitting device having the light emitting element can use various forms or have various elements. As an example of the display element, the display device, the light emitting element, or the light emitting device, there are an EL (electroluminescence) element (EL element including organic and inorganic substances, organic EL element, inorganic EL element), an LED (white LED, red LED, green LED, blue LED, etc.), a transistor (transistor that emits light according to current), an electron emission element, a liquid crystal element, an electronic ink, an electrophoretic element, a grating light valve (GLV), a plasma display panel (PDP), a display element using MEMS (micro-electro-mechanical system), a digital micromirror device (DMD), a DMS (digital micro shutter), a MIRASOL (registered trademark), an IMOD (interference modulation) element, a shutter type MEMS display element, a light interference type MEMS display element. For example, in this specification and the like, the display element, the display device having the display element, the light emitting element, and the light emitting device having the light emitting element can use various forms or have various elements. As an example of the display element, the display device, the light emitting element, or the light emitting device, there are an EL (electroluminescence) element (EL element including organic and inorganic substances, organic EL element, inorganic EL element), an LED (white LED, red LED, green LED, blue LED, etc.), a transistor (transistor that emits light according to current), an electron emission element, a liquid crystal element, an electronic ink, an electrophoretic element, a grating light valve (GLV), a plasma display panel (PDP), a display element using MEMS (micro-electro-mechanical system), a digital micromirror device (DMD), a DMS (digital micro shutter), a MIRASOL (registered trademark), an IMOD (interference modulation) element, a shutter type MEMS display element, a light interference type MEMS display element. For example, in this specification and the like, the display element, the display device having the display element, the light emitting element, and the light emitting device having the light emitting element can use various forms or have various elements. As an example of the display element, the display device, the light emitting element, or the light emitting device, there are an EL (electroluminescence) element (EL element including organic and inorganic substances, organic EL element, inorganic EL element), an LED (white LED, red LED, green LED, blue LED, etc.), a transistor (transistor that emits light according to current), an electron emission element, a liquid crystal element, an electronic ink, an electrophoretic element, a grating light valve (GLV), a plasma display panel (PDP), a display element using MEMS (micro-electro-mechanical system), a digital micromirror device (DMD), a DMS (digital micro shutter), a MIRASOL (registered trademark), an IMOD (interference modulation) element, a shutter type MEMS display element, a light interference type MEMS display element. For example, in this specification and the like, the display element, the display device having the display element, the light emitting element, and the light emitting device having the light emitting element can use various forms or have various elements. As an example of the display element, the display device, the light emitting element, or the light emitting device, there are an EL (electroluminescence) element (EL element including organic and inorganic substances, organic EL element, inorganic EL element), an LED (white LED, red LED, green LED, blue LED, etc.), a transistor (transistor that emits light according to current), an electron emission element, a liquid crystal element, an electronic ink, an electrophoretic element, a grating light valve (GLV), a plasma display panel (PDP), a display element using MEMS (micro-electro-mechanical system), a digital micromirror device (DMD), a DMS (digital micro shutter), a MIRASOL (registered trademark), an IMOD (interference modulation) element, a shutter type MEMS display element, a light interference type MEMS display element. For example, in this specification and the like, the display element, the display device having the display element, the light emitting element, and the light emitting device having the light emitting element can use various forms or have various elements. As an example of the display element, the display device, the light emitting element, or the light emitting device, there are an EL (electroluminescence) element (EL element including organic and inorganic substances, organic EL element, inorganic EL element), an LED (white LED, red LED, green LED, blue LED, etc.), a transistor (transistor that emits light according to current), an electron emission element, a liquid crystal element, an electronic ink, an electrophoretic element, a grating light valve (GLV), a plasma display panel (PDP), a display element using MEMS (micro-electro-mechanical system), a digital micromirror device (DMD), a DMS (digital micro shutter), a MIRASOL (registered trademark), an IMOD (interference modulation) element, a shutter type MEMS display element, a light interference type MEMS display element. Electrowetting elements, piezoelectric ceramic displays, carbon nanotubes, etc., there are those having a display medium in which contrast, brightness, reflectance, transmittance, etc. change due to electromagnetic action. As an example of a display device using an EL element, there is an EL display etc. As an example of a display device using an electron-emitting element, there is a field emission display (FED) or an SED type flat panel display (SED: Surface-c onduction Electron-emitter Display), etc. As an example of a display device using a liquid crystal element, there are liquid crystal displays (transmissive liquid crystal displays, semi-transmissive liquid crystal displays, reflective liquid crystal displays, direct-view liquid crystal displays, projection type liquid crystal displays), etc. As an example of a display device using electronic ink or an electrophoretic element, there is electronic paper, etc. In addition, when realizing a semi-transmissive liquid crystal display or a reflective liquid crystal display, part or all of the pixel electrodes may have the function of a reflective electrode. For example, part or all of the pixel electrodes may have aluminum, silver, etc. Further, in that case, it is possible to provide a storage circuit such as an SRAM under the reflective electrode. Thereby, further power consumption can be reduced.

[0200] [Examples of touch panel driving methods] Hereinafter, the operation of the touch panel 80 that performs display in a first mode for video display and a second mode for still image display will be described using the timing chart shown in FIG. 15. FIG. 1 5 shows the signal waveforms of the vertical synchronization signal (Vsync) and the data signal (Vdata) output from the source driver 803 to the source line L_Y . ​

[0201] As an example, FIG. 15 shows the timing chart of the touch panel 80 when video display, then still image display, and then video display again are performed. Here, it is assumed that there is movement in the image data from the first frame to the k-th frame. Then, it is assumed that there is no movement in the image data from the (k + 1)-th frame to the (k + 3)-th frame. Next, it is assumed that there is movement in the image data after the (k + 4)-th frame. Note that k is an integer of 2 or more. In the first video display period, in the motion detection unit 811, it is determined that there is movement in the image data of each frame. Therefore, the touch panel 80 operates in the first mode. In the control circuit 810, the frame frequency is set to be equal to or higher than the frequency of the vertical synchronization signal, here the frame frequency f and, the image signal (Video) is output to the source driver 803. Then, the source driver 803 continuously outputs the data signal (Vdata) to the source line L_Y. Note that the length of one frame period in the video display period is represented by 1 / f (seconds).

[0202] Next, in the still image display period, in the motion detection unit 811, image processing for motion detection is performed, and it is determined that there is no movement in the image data of the (k + 1)-th frame. Therefore, the touch panel 8 0 operates in the second mode. In the control circuit 810, the frame frequency is set to be lower than the frequency of the vertical synchronization signal, here the frame frequency f and, it is output to the source driver 803. Then 1 and the source driver 803 intermittently outputs the data signal (Vdata) to the source line L_Y. Note that the length of one frame period in the still image display period is 1 / f (seconds). Note that the length of one frame period in the video display period is represented by 1 / f 1 (seconds).

[0203] Next, in the still image display period, in the motion detection unit 811, image processing for motion detection is performed, and it is determined that there is no movement in the image data of the (k + 1)-th frame. Therefore, the touch panel 8 0 operates in the second mode. In the control circuit 810, the frame frequency is set to be lower than the frequency of the vertical synchronization signal, here the frame frequency f and, it is output to the source driver 803. Then the source driver 803 intermittently outputs the data signal (Vdata) to the source line L_Y. Note that the length of one frame period in the still image display period is 1 / f 2 and, it is output to the source driver 803. Then the source driver 803 intermittently outputs the data signal (Vdata) to the source line L_Y. Note that the length of one frame period in the still image display period is 1 / f (seconds).2 (seconds ) is represented by

[0204] Since the source driver 803 can intermittently output the data signal (Vdata), the supply of control signals (start pulse signal, clock signal, etc.) to the gate driver 802 and the source driver 803 may also be intermittently performed, and the gate driver 8 02 and the source driver 803 can be periodically stopped.

[0205] Regarding the intermittent output of the data signal (Vdata) to the source line L_Y in the second mode, it will be specifically described. As an example, as shown in FIG. 15, when it comes to the (k + 1)-th frame, the control circuit 810 outputs control signals to the gate driver 802 and the source driver 803, and outputs the image signal Vide o to the source driver 803 with the frame frequency being f 2 The source driver 803 outputs the data signal written in the previous period, that is, the data signal (k_data) output to the source line L_Y in the k-th frame, to the source line L_Y. In this way, during the still image display period, the data signal (k_data) written in the previous period is repeatedly written to the source line L_Y every period of 1 / f (seconds). Therefore, the voltage corresponding to the gradation of the image signal of the same image can be refreshed. 2 By refreshing periodically, the flicker (flicker) caused by the gradation deviation due to the voltage drop can be reduced, and a touch panel with improved display quality can be obtained.

[0206] Then, in the control circuit 810, the motion detection unit 811 determines that there is motion in the image data. It operates in the second mode until an input of a result, or a sensor signal, is obtained.

[0207] Then, when the motion detection unit 811 determines that there is motion in the image data after the (k + 4)-th frame, the touch panel 80 operates in the first mode again. The control circuit 810 outputs an image signal (Video) to the source driver 803 at a frame frequency equal to or higher than the frequency of the vertical synchronization signal, here the frame frequency f as 1 and the source driver 803 continuously outputs the data signal (Vdata) to the source line L_Y.

[0208] As shown in Embodiment 1, a touch panel according to an aspect of the present invention has a configuration in which a display device and a touch sensor are sandwiched between two flexible substrates, and the distance between the display device and the touch sensor can be made extremely close. At this time, noise during driving of the display device is likely to propagate to the touch sensor, and there is a risk that the sensitivity of the touch sensor will decrease. However, by applying the driving method exemplified in this embodiment, a touch panel that achieves both thinning and high detection sensitivity can be realized.

[0209] This embodiment can be implemented in appropriate combination with at least some of the other embodiments described in this specification.

[0210] (Embodiment 4) In this embodiment, an example of forming a protective film or the like on the surface of members such as the touch panel described above by aerosol deposition is shown below.

[0211] The aerosol deposition (AD) method is a method of forming a film without heating the substrate. ​​​​​An aerosol refers to fine particles dispersed in a gas.

[0212] FIG. 16(A) shows an example of a cross-sectional structure of a film-forming apparatus for forming a film with an aerosol.

[0213] The film-forming apparatus includes a chamber 53, a stage 59 installed in the chamber 53 for holding a film-forming object (e.g., a substrate 60, etc.), an exhaust device 55 such as a pump (a mechanical booster pump, a rotary pump, etc.) for evacuating the inside of the chamber 53, spraying means (such as a nozzle 56), a raw material container 63 connected to the spraying means via a supply line, a gas line for introducing a carrier gas, and a gas tank 51, at least.

[0214] First, vibration (such as ultrasonic waves) is applied to the raw material powder in the raw material container 63 by a vibrator 62 and heated to remove the moisture in the raw material container 63, and the moisture is exhausted by an exhaust device 54 via an exhaust line.

[0215] Next, a carrier gas is introduced into the raw material container 63 via a gas line to aerosolize the raw material powder. As the carrier gas, dry air, oxygen, an inert gas (nitrogen, helium gas, argon gas, etc.) is used, and the flow rate of the carrier gas can be adjusted by a flow meter 52.

[0216] In the chamber 53 depressurized by the exhaust device 55, an aerosol containing fine particles of an inorganic material (50 nm or more and 500 nm or less) is ejected from the nozzle 56 and sprayed onto the substrate 60 to collide the fine particles, thereby solidifying the aerosol and forming an inorganic material layer on the surface of the substrate 60. The film formation method that can be achieved is called the AD method. The aerosol ejected from nozzle 56 is directed at the film-forming object (e.g., substrate 60, etc.) with a specific incident angle θ (0° ≤ θ ≤ 90°) so that it impacts the film-forming object (e.g., substrate 60, etc.). The positions of the film-forming object (e.g., substrate 60, etc.) and the nozzle 56 are appropriately set. As the incident angle increases, the impact force when the fine particles collide with the surface of the substrate 60 tends to increase. On the other hand, when the incident angle decreases, the mechanical action including the impact force of the fine particles on the surface of the substrate 60 becomes smaller. Depending on the material of the fine particles used, the optimal incident angle θ for ejecting the aerosol onto the film-forming object (e.g., substrate 60, etc.) may also vary. Therefore, it is important to appropriately set this incident angle θ. In the device of Fig. 16(A), an example is shown where the incident angle θ is fixed by the angle adjustment means 61, but it is not particularly limited. A device configuration where the nozzle is fixed and the angle of the stage 59 can be appropriately changed may also be used.

[0217] Moreover, an enlarged perspective view of the tip portion of the nozzle 56 is shown in Fig. 16(B). Here, a wide nozzle opening 57 is illustrated, but it is not particularly limited, and a nozzle having a plurality of nozzle openings may also be used.

[0218] Also, it is possible to selectively form a film by installing a mask having an opening between the nozzle 56 and the substrate 60. Further, by the drive device 58 that moves the stage 59 in the X direction or the Y direction, the substrate 60 can be moved in the X direction or the Y direction to form a film over a wide area.

[0219] As the material of the fine particles used in the AD method, aluminum oxide, yttrium oxide, aluminum nitride,

[0220] As the material of the fine particles used in the AD method, aluminum oxide, yttrium oxide, aluminum nitride, ​​​​​​​Examples of inorganic materials include aluminum, silicon carbide, silicon nitride, titanium oxide, and the like.

[0221] By using the aerosol deposition (AD) method, a film can be formed at a low temperature such as room temperature on the surface of a resin substrate or an organic material layer. In the aerosol deposition (AD) method, after the fine particles collide with the substrate surface, the fine particles undergo plastic deformation and, in some cases, are crushed and pressed onto the substrate, causing the fine particles to adhere. By repeating this phenomenon, a film grows. In this embodiment, for example, a film formed by the aerosol deposition method can be used for a protective layer 178 or the like applied to the surface of the substrate on the touch sensor side in the touch panel 100. For example, an aluminum oxide film with a film thickness of 100 nm or more and 200 nm or less is formed on an aramid film by the aerosol deposition method to serve as the protective layer 178. The film obtained by the aerosol deposition method is dense, and at the same time as film formation, fine irregularities are given to the film surface, enabling the realization of a protective film with strong adhesion. In this embodiment, for example, a film formed by the aerosol deposition method can be used for a protective layer 178 or the like applied to the surface of the substrate on the touch sensor side in the touch panel 100. For example, an aluminum oxide film with a film thickness of 100 nm or more and 200 nm or less is formed on an aramid film by the aerosol deposition method to serve as the protective layer 178. The film obtained by the aerosol deposition method is dense, and at the same time as film formation, fine irregularities are given to the film surface, enabling the realization of a protective film with strong adhesion. In this embodiment, for example, a film formed by the aerosol deposition method can be used for a protective layer 178 or the like applied to the surface of the substrate on the touch sensor side in the touch panel 100. For example, an aluminum oxide film with a film thickness of 100 nm or more and 200 nm or less is formed on an aramid film by the aerosol deposition method to serve as the protective layer 178. The film obtained by the aerosol deposition method is dense, and at the same time as film formation, fine irregularities are given to the film surface, enabling the realization of a protective film with strong adhesion.

[0222] In this embodiment, for example, a film formed by the aerosol deposition method can be used for a protective layer 178 or the like applied to the surface of the substrate on the touch sensor side in the touch panel 100. For example, an aluminum oxide film with a film thickness of 100 nm or more and 200 nm or less is formed on an aramid film by the aerosol deposition method to serve as the protective layer 178. The film obtained by the aerosol deposition method is dense, and at the same time as film formation, fine irregularities are given to the film surface, enabling the realization of a protective film with strong adhesion. In this embodiment, for example, a film formed by the aerosol deposition method can be used for a protective layer 178 or the like applied to the surface of the substrate on the touch sensor side in the touch panel 100. For example, an aluminum oxide film with a film thickness of 100 nm or more and 200 nm or less is formed on an aramid film by the aerosol deposition method to serve as the protective layer 178. The film obtained by the aerosol deposition method is dense, and at the same time as film formation, fine irregularities are given to the film surface, enabling the realization of a protective film with strong adhesion. In this embodiment, for example, a film formed by the aerosol deposition method can be used for a protective layer 178 or the like applied to the surface of the substrate on the touch sensor side in the touch panel 100. For example, an aluminum oxide film with a film thickness of 100 nm or more and 200 nm or less is formed on an aramid film by the aerosol deposition method to serve as the protective layer 178. The film obtained by the aerosol deposition method is dense, and at the same time as film formation, fine irregularities are given to the film surface, enabling the realization of a protective film with strong adhesion. In this embodiment, for example, a film formed by the aerosol deposition method can be used for a protective layer 178 or the like applied to the surface of the substrate on the touch sensor side in the touch panel 100. For example, an aluminum oxide film with a film thickness of 100 nm or more and 200 nm or less is formed on an aramid film by the aerosol deposition method to serve as the protective layer 178. The film obtained by the aerosol deposition method is dense, and at the same time as film formation, fine irregularities are given to the film surface, enabling the realization of a protective film with strong adhesion. In this embodiment, for example, a film formed by the aerosol deposition method can be used for a protective layer 178 or the like applied to the surface of the substrate on the touch sensor side in the touch panel 100. For example, an aluminum oxide film with a film thickness of 100 nm or more and 200 nm or less is formed on an aramid film by the aerosol deposition method to serve as the protective layer 178. The film obtained by the aerosol deposition method is dense, and at the same time as film formation, fine irregularities are given to the film surface, enabling the realization of a protective film with strong adhesion. In this embodiment, for example, a film formed by the aerosol deposition method can be used for a protective layer 178 or the like applied to the surface of the substrate on the touch sensor side in the touch panel 100. For example, an aluminum oxide film with a film thickness of 100 nm or more and 200 nm or less is formed on an aramid film by the aerosol deposition method to serve as the protective layer 178. The film obtained by the aerosol deposition method is dense, and at the same time as film formation, fine irregularities are given to the film surface, enabling the realization of a protective film with strong adhesion.

[0223] (Embodiment 5) In this embodiment, an electronic device that can be manufactured by applying a touch panel according to one aspect of the present invention will be described with reference to FIGS. 17 and 18. In this embodiment, an electronic device that can be manufactured by applying a touch panel according to one aspect of the present invention will be described with reference to FIGS. 17 and 18.

[0224] Examples of electronic devices include television devices (also referred to as televisions or television receivers), monitors for computers, digital cameras, digital video cameras, digital photo frames, mobile phones (also referred to as mobile phones or mobile phone devices), portable game machines, Examples of electronic devices include television devices (also referred to as televisions or television receivers), monitors for computers, digital cameras, digital video cameras, digital photo frames, mobile phones (also referred to as mobile phones or mobile phone devices), portable game machines, Examples of electronic devices include television devices (also referred to as televisions or television receivers), monitors for computers, digital cameras, digital video cameras, digital photo frames, mobile phones (also referred to as mobile phones or mobile phone devices), portable game machines, portable information terminals, audio playback devices, and large game machines such as pachinko machines.

[0225] In addition, since the device according to one aspect of the present invention is flexible, it can also be incorporated along the inner or outer wall of a house or building, or along the curved surface of the interior or exterior of an automobile.

[0226] FIG. 17(A) shows an example of a mobile phone. The mobile phone 7400 includes, in addition to a display unit 7402 incorporated in a housing 740 1, operation buttons 7403, an external connection port 7404 , a speaker 7405, a microphone 7406, and the like. Note that the mobile phone 7400 is manufactured by using a display device manufactured by applying one aspect of the present invention to the display unit 7402. According to one aspect of the present invention, a mobile phone having a curved display unit and high reliability can be provided with a high yield.

[0227] In the mobile phone 7400 shown in FIG. 17(A), information can be input by touching the display unit 7402 with a finger or the like. Also, any operation such as making a call or inputting characters can be performed by touching the display unit 7402 with a finger or the like.

[0228] In addition, by operating the operation buttons 7403, the power can be turned on and off, and the type of image displayed on the display unit 7402 can be switched. For example, it can be switched from the mail creation screen to the main menu screen.

[0229] FIG. 17(B) shows an example of a wristwatch-type portable information terminal. The portable information terminal 7100 includes a housing 7101, a display unit 7102, a band 7103, a buckle 7104, operation buttons 7 105, input / output terminals 7106, and the like.

[0230] The portable information terminal 7100 can be used for mobile phones, e-mails, text viewing and creation, music playback, and Internet It is possible to execute various applications such as Internet communication and computer games.

[0231] The display unit 7102 is provided with a curved display surface and can perform display along the curved display surface. In addition, the display unit 7102 is provided with a touch sensor and can be operated by touching the screen with a finger, a stylus, etc. For example, an application can be launched by touching the icon 7107 displayed on the display unit 7102.

[0232] The operation button 7105 can have various functions such as time setting, power on / off operation, wireless communication on / off operation, execution and cancellation of the manner mode, execution and cancellation of the power saving mode, etc. For example, the function of the operation button 7105 can also be freely set by the operation system incorporated in the portable information terminal 7100.

[0233] In addition, the portable information terminal 7100 can execute communication-standardized short-range wireless communication. For example, it can communicate hands-free by communicating with a wireless communication-enabled headset.

[0234] In addition, the portable information terminal 7100 is provided with an input / output terminal 7106 and can directly exchange data with other information terminals via a connector. In addition, charging can also be performed via the input / output terminal 7106. Note that the charging operation may be performed by wireless power supply without passing through the input / output terminal 7106.

[0235] In the display unit 7102 of the portable information terminal 7100, a display is manufactured by applying one aspect of the present invention. ​​​​​​​​​​​A light device is incorporated. According to one aspect of the present invention, a portable information terminal having a curved display unit and high reliability can be provided with good yield. can be provided with good yield.

[0236] FIG. 17(C) shows an example of a portable display device. The display device 7300 includes a housing 7301, a display unit 7302, operation buttons 7303, a drawer member 7304, and a control unit 730 5.

[0237] The display device 7300 includes a flexible display unit 7302 wound in a roll shape within a cylindrical housing 7301. is provided.

[0238] Further, the display device 7300 can receive a video signal by the control unit 7305 and display the received video on the display unit 7302. Also, the control unit 7305 is provided with a battery. Further, the control unit 7305 is provided with a terminal unit to which a connector is connected, and may be configured to directly supply a video signal and power from the outside by a wire. image can be displayed on the display unit 7302. Also, the control unit 7305 is provided with a battery. Also, the control unit 7305 is provided with a terminal unit to which a connector is connected, and a video signal and power can be directly supplied from the outside by a wire. is provided with a terminal portion to which a connector is connected, and a video signal and power can be directly supplied from the outside by a wire. It may be configured to be directly supplied from the outside by a wire.

[0239] Also, by the operation buttons 7303, operations such as turning on and off the power and switching the video to be displayed can be performed. can be performed.

[0240] FIG. 17(D) shows the display device 7300 in a state where the display unit 7302 is pulled out by the drawer member 7304. In this state, a video can be displayed on the display unit 7302. Also a video can be displayed on the display unit 7302. Also it can be easily operated with one hand by the operation buttons 7303 arranged on the surface of the housing 7301. Also, as shown in FIG. 17(C), by arranging the operation buttons 7303 off-center on one side of the housing 7301 it can be easily operated with one hand. and placing them on one side without placing them in the center of the housing 7301, it can be easily operated with one hand.

[0241] When the display unit 7302 is pulled out, the display surface of the display unit 7302 is made flat. For fixing, a reinforcing frame may be provided on the side of the display portion 7302.

[0242] In addition to this configuration, a speaker is provided on the housing, and the audio signal received together with the video signal is output. The configuration may be such that sound is outputted.

[0243] 18(A) to (C) show a foldable mobile information terminal 310. 18(B) shows the portable information terminal 310 in the unfolded or folded state. The mobile information terminal 310 is in the process of changing from one folded state to the other. FIG. 3C) shows the portable information terminal 310 in a folded state. When folded, it is highly portable, and when unfolded, it has a seamless, large display area that allows you to see the display clearly. Excellent overview.

[0244] The display panel 312 is supported by three housings 315 connected by hinges 313. The two housings 315 are bent via the hinge 313, so that the portable information terminal 3 10 can be reversibly transformed from the unfolded state to the folded state. A display device manufactured according to one embodiment can be used for the display panel 312. For example, In this case, a display device that can be bent with a radius of curvature of 1 mm or more and 150 mm or less can be applied.

[0245] 18(D) and (E) show a foldable mobile information terminal 320. 1 shows the portable information terminal 320 in a folded state with the display unit 322 facing outward. 8(E), the portable information terminal 320 is folded so that the display unit 322 faces inward. Shown. When the mobile information terminal 320 is not in use, by folding the non-display part 325 outward, soiling and damage to the display part 322 can be suppressed. A display device manufactured by applying one aspect of the present invention can be used for the display part 322.

[0246] FIG. 18(F) is a perspective view for explaining the outer shape of the mobile information terminal 330. FIG. 18(G) is a top view of the mobile information terminal 330. FIG. 18(H) is a perspective view for explaining the outer shape of the mobile information terminal 340.

[0247] The mobile information terminals 330 and 340 have one or more functions selected from, for example, a telephone, a notebook, or an information browsing device, etc. Specifically, they can each be used as a smartphone.

[0248] The mobile information terminals 330 and 340 can display character and image information on their multiple surfaces. For example, three operation buttons 339 can be displayed on one surface (FIG. 18(F), (H)). Also, information 337 indicated by a dashed rectangle can be displayed on another surface (FIG. 18 (G), (H)). Examples of the information 337 include displays for notifying incoming calls such as e-mails, SNS (Social Networking Service), and telephones, the titles of e-mails and SNS, the sender names of e-mails and SNS, the date and time, the remaining battery level, the antenna reception strength, etc. Alternatively, operation buttons 339, icons, etc. may be displayed at the position where the information 337 is displayed instead of the information 337. In FIGS. 18(F) and (G), an example where the information 337 is displayed on the upper side is shown, but one aspect of the present invention is not limited to this. For example, as in the mobile information terminal 340 shown in FIG. 18(H), it may be displayed on the side. ​​​​​​​​​

[0249] For example, the user of the mobile information terminal 330 may store the mobile information terminal 330 in a breast pocket of a suit. When the item is stored, the display (information 337 in this example) can be confirmed.

[0250] Specifically, the telephone number or name of the caller of the incoming call is displayed on the mobile information terminal 330. The user takes the mobile information terminal 330 out of his pocket and You can check the display and decide whether or not to answer the call without having to turn your phone back on.

[0251] The housing 335 of the portable information terminal 330 and the housing 336 of the portable information terminal 340 each have A display device manufactured according to one embodiment of the present invention can be used for the display portion 333. According to one embodiment of the present invention, a display device having a curved display portion and high reliability can be manufactured with high yield. Can be provided well.

[0252] In addition, even if information is displayed on three or more screens, as in the case of a portable information terminal 345 shown in FIG. Here, information 355, information 356, and information 357 are displayed on different sides. Here is an example.

[0253] A display portion 358 of a housing 351 of a portable information terminal 345 is provided with one embodiment of the present invention. According to one embodiment of the present invention, a display device having a curved display portion can be used. Moreover, highly reliable display devices can be provided with a high yield.

[0254] The touch panel of one embodiment of the present invention can be applied to the display portion of the electronic device described above. This allows electronic devices to be made thinner, lighter, and more multifunctional while providing high detection sensitivity. The electronic device can achieve this.

[0255] This embodiment can be implemented in appropriate combination with at least some of the other embodiments described in this specification.

[0256] (Embodiment 6) In this embodiment, an oxide semiconductor that can be suitably used for a semiconductor layer of a semiconductor device applicable to a display panel of one aspect of the present invention will be described.

[0257] The oxide semiconductor has a large energy gap of 3.0 eV or more, and an oxide semiconductor film obtained by processing the oxide semiconductor under appropriate conditions and sufficiently reducing its carrier density is applied. In the transistor, the off-current can be made extremely low as compared with a transistor using conventional silicon.

[0258] As the applicable oxide semiconductor, it is preferably contained at least indium (In) or zinc (Zn). In particular, it is preferably contained In and Zn. Further, as a stabilizer for reducing the variation in the electrical characteristics of a transistor using the oxide semiconductor, in addition to them, gallium (Ga), tin (Sn), hafnium (Hf), zirconium (Zr), titanium (Ti), scandium (Sc), yttrium (Y), lanthanoids (for example, cerium (Ce), neodymium (Nd), gadolinium (Gd)) selected from one or more kinds are preferably contained.

[0259] For example, as the oxide semiconductor, indium oxide, tin oxide, zinc oxide, In-Zn-based oxide, Sn-Zn-based oxide, Al-Zn-based oxide, Zn-Mg-based oxide, Sn-Mg-based oxide, Oxides, In-Mg oxides, In-Ga oxides, In-Ga-Zn oxides (also denoted as IGZO ), In-Al-Zn oxides, In-Sn-Zn oxides, Sn-Ga- Zn oxides, Al-Ga-Zn oxides, Sn-Al-Zn oxides, In-Hf-Z n oxides, In-Zr-Zn oxides, In-Ti-Zn oxides, In-Sc-Zn oxides, In-Y-Zn oxides, In-La-Zn oxides, In-Ce-Zn oxide s, In-Pr-Zn oxides, In-Nd-Zn oxides, In-Sm-Zn oxides , In-Eu-Zn oxides, In-Gd-Zn oxides, In-Tb-Zn oxides , In-Dy-Zn oxides, In-Ho-Zn oxides, In-Er-Zn oxides, In-Tm-Zn oxides, In-Yb-Zn oxides, In-Lu-Zn oxides, I n-Sn-Ga-Zn oxides, In-Hf-Ga-Zn oxides, In-Al-Ga- Zn oxides, In-Sn-Al-Zn oxides, In-Sn-Hf-Zn oxides, I n-Hf-Al-Zn oxides can be used.

[0260] Here, the In-Ga-Zn oxide means an oxide having In, Ga, and Zn as main components, and the ratio of In, Ga, and Zn is not limited. Also, metal elements other than In, Ga, and Zn may be included.

[0261] Also, as the oxide semiconductor, InMO 3 (ZnO) m (where m > 0 and m is not an integer ) can be used. Here, M represents one metal element or a plurality of metal elements selected from Ga, Fe, Mn, and Co, or the elements as the above stabilizers . ​. Further, as the oxide semiconductor, In 2 SnO 5 (ZnO) n (n > 0, and n is an integer) The material represented by may also be used.

[0262] For example, In:Ga:Zn = 1:1:1, In:Ga:Zn = 1:3:2, In:Ga :Zn = 1:3:4, In:Ga:Zn = 1:3:6, In:Ga:Zn = 3:1:2 or An In-Ga-Zn-based oxide having an atomic ratio of In:Ga:Zn = 2:1:3 or an oxide in the vicinity of its composition may be used.

[0263] When a large amount of hydrogen is contained in the oxide semiconductor film, by bonding with the oxide semiconductor, a part of the hydrogen becomes a donor and generates electrons as carriers. As a result, the threshold voltage of the transistor shifts in the negative direction. Therefore, after the formation of the oxide semiconductor film, a dehydration treatment (dehydrogenation treatment) is performed to remove hydrogen or moisture from the oxide semiconductor film and purify it to a high purity so that impurities are not contained as much as possible.

[0264] Note that, by the dehydration treatment (dehydrogenation treatment) of the oxide semiconductor film, oxygen may also decrease simultaneously from the oxide semiconductor film. Therefore, in order to compensate for the oxygen deficiency increased by the dehydration treatment (dehydrogenation treatment) of the oxide semiconductor film, it is preferable to perform a treatment of adding oxygen to the oxide semiconductor film. In this specification and the like, the case of supplying oxygen to the oxide semiconductor film may sometimes be referred to as an oxygen addition treatment. Or the case of making the oxygen contained in the oxide semiconductor film more than the stoichiometric composition may sometimes be referred to as a peroxide treatment. In this specification and the like, when oxygen is supplied to the oxide semiconductor film it may sometimes be referred to as an oxygen addition treatment. Or the case of making the oxygen contained in the oxide semiconductor film more than the stoichiometric composition may sometimes be referred to as a peroxide treatment.

[0265] ​Thus, the oxide semiconductor film can be made into a type-I (intrinsic) or substantially type-I (intrinsic) oxide semiconductor film by removing hydrogen or moisture through a dehydration treatment (dehydrogenation treatment) and compensating for oxygen vacancies through an oxygen addition treatment. Note that substantially intrinsic means that the carrier density of the oxide semiconductor layer is less than 1×10 17 / cm 3 , preferably less than 1×10 / cm 15 , more preferably less than 1×1 3 0 / cm 13 , even more preferably less than 8×10 11 / cm 3 , even more preferably less than 1 11 ×10 / cm 3 , even more preferably less than 1×10 10 / cm 3 , and even more preferably less than 1×10 -9 / cm 3 , and more than 1×10 -18 / cm

[0266] Also, a transistor having a type-I or substantially type-I oxide semiconductor film can achieve extremely excellent off-current characteristics. For example, when the transistor using the oxide semiconductor film is in the off state, the drain current at room temperature (about 25°C) is 1×10 A or less, preferably 1×10 -21 A or less, more preferably 1×10 A or less, or at 85 -24 ℃, it is 1×10 -15 A or less, preferably 1×10 A or less, more preferably 1× -18 10 -21 A or less. Note that the off state of the transistor means that for an n-channel 4 In the case of a transistor of a certain type, it refers to a state where the gate voltage is sufficiently smaller than the threshold voltage. Specifically if the gate voltage is 1 V or more, 2 V or more, or 3 V or more smaller than the threshold voltage , the transistor is in an off state.

[0267] Hereinafter, the structure of the oxide semiconductor film will be described.

[0268] In this specification, "parallel" means a state where two straight lines are arranged at an angle of -10° or more and 10° or less. Therefore, the case of -5° or more and 5° or less is also included. Also , "substantially parallel" means a state where two straight lines are arranged at an angle of -30° or more and 30° or less. Also, "perpendicular" means a state where two straight lines are arranged at an angle of 80° or more and 100° or less. Therefore, the case of 85° or more and 95° or less is also included. Also, "substantially perpendicular" means a state where two straight lines are arranged at an angle of 60° or more and 120° or less.

[0269] Also, in this specification, when the crystal is trigonal or rhombohedral, it is expressed as a hexagonal system.

[0270] Oxide semiconductors can be divided into single-crystalline oxide semiconductors and other non-single-crystalline oxide semiconductors. Examples of non-single-crystalline oxide semiconductors include CAAC-OS (C Axis Aligned Crystalline Oxide Semiconductor), polycrystalline oxide semiconductors, microcrystalline oxide semiconductors, amorphous oxide semiconductors, and the like.

[0271] From another perspective, oxide semiconductors can be divided into amorphous oxide semiconductors and other crystalline oxide semiconductors. Examples of crystalline oxide semiconductors include single-crystalline oxide semiconductors, CAAC- ​There are OS, polycrystalline oxidesemiconductors, microcrystalline oxidesemiconductors, etc.

[0272] First, CAAC-OS will be described. Note that CAAC-OS can also be called an oxide semiconductor having CANC (C-Axis Aligned nanocrystals).

[0273] CAAC-OS is one of the oxide semiconductors having a plurality of crystal parts (also referred to as pellets) oriented in the c-axis direction.

[0274] By a transmission electron microscope (TEM: Transmission Electron Microscope), when observing a composite analysis image (also referred to as a high-resolution TEM image) of a bright-field image and a diffraction pattern of CAAC-OS, a plurality of pellets can be confirmed. On the other hand, in a high-resolution TEM image, the boundaries between pellets, that is, grain boundaries (also referred to as grain boundaries), cannot be clearly confirmed. Therefore, it can be said that in CAAC-OS, a decrease in electron mobility due to grain boundaries is unlikely to occur.

[0275] Hereinafter, CAAC-OS observed by TEM will be described. FIG. 19(A) shows a high-resolution TEM image of a cross section of CAAC-OS observed from a direction substantially parallel to the sample surface. For observation of a high-resolution TEM image, a spherical aberration correction (Spherical Aberration Corrector) function was used. A high-resolution TEM image using a spherical aberration correction function is particularly called a Cs-corrected high-resolution TEM image. Acquisition of a Cs-corrected high-resolution TEM image can be performed, for example, by an atomic resolution analysis electron microscope JEM-ARM200F manufactured by JEOL Ltd.

[0276] ​​​​​​​​​​​​​ An enlarged Cs-corrected high-resolution TEM image of the region (1) in Fig. 19(A) is shown in Fig. 19(B). From Fig. 19(B), it can be confirmed that in the pellet, metal atoms are arranged in layers. The arrangement of each layer of metal atoms reflects the unevenness of the surface (also referred to as the surface to be formed) or the upper surface of the CAAC-OS, and is parallel to the surface to be formed or the upper surface of the CAAC-OS. Also, as shown in Fig. 19(B), CAAC-OS has a characteristic atomic arrangement. Fig. 19(C) shows the characteristic atomic arrangement indicated by auxiliary lines. From Fig. 19(B) and Fig. 19(C), the size of one pellet is about 1 nm or more and 3 nm or less, and the size of the gap formed by the inclination between pellets is about 0.8 nm. Therefore, the pellet can also be called a nanocrystal (nc).

[0277] As shown in Fig. 19(B), CAAC-OS has a characteristic atomic arrangement. Fig. 19(C) shows the characteristic atomic arrangement indicated by auxiliary lines. From Fig. 19(B) and Fig. 19(C), the size of one pellet is about 1 nm or more and 3 nm or less, and the size of the gap formed by the inclination between pellets is about 0.8 nm. Therefore, the pellet can also be called a nanocrystal (nc). Here, based on the Cs-corrected high-resolution TEM image, when the arrangement of the CAAC-OS pellets 5100 on the substrate 5120 is schematically shown, it has a structure like bricks or blocks stacked (see Fig. 19(D)). The location where an inclination occurs between the pellets observed in Fig. 19(C) corresponds to the region 5161 shown in Fig. 19(D). Here, based on the Cs-corrected high-resolution TEM image, when the arrangement of the CAAC-OS pellets 5100 on the substrate 5120 is schematically shown, it has a structure like bricks or blocks stacked (see Fig. 19(D)). The location where an inclination occurs between the pellets observed in Fig. 19(C) corresponds to the region 5161 shown in Fig. 19(D). Also, Fig. 20(A) shows a Cs-corrected high-resolution TEM image of the plane of CAAC-OS observed from a direction substantially perpendicular to the sample surface. Enlarged Cs-corrected high-resolution TEM images of the regions (1), (2), and (3) in Fig. 20(A) are shown in Fig. 20(B), Fig. 20(C), and Fig. 20(D), respectively. From Fig. 20(B), Fig. 20(C), and Fig. 20(D), it can be seen that the pellets Here, based on the Cs-corrected high-resolution TEM image, when the arrangement of the CAAC-OS pellets 5100 on the substrate 5120 is schematically shown, it has a structure like bricks or blocks stacked (see Fig. 19(D)). The location where an inclination occurs between the pellets observed in Fig. 19(C) corresponds to the region 5161 shown in Fig. 19(D).

[0278] Here, based on the Cs-corrected high-resolution TEM image, when the arrangement of the CAAC-OS pellets 5100 on the substrate 5120 is schematically shown, it has a structure like bricks or blocks stacked (see Fig. 19(D)). The location where an inclination occurs between the pellets observed in Fig. 19(C) corresponds to the region 5161 shown in Fig. 19(D). Here, based on the Cs-corrected high-resolution TEM image, when the arrangement of the CAAC-OS pellets 5100 on the substrate 5120 is schematically shown, it has a structure like bricks or blocks stacked (see Fig. 19(D)). The location where an inclination occurs between the pellets observed in Fig. 19(C) corresponds to the region 5161 shown in Fig. 19(D). Here, based on the Cs-corrected high-resolution TEM image, when the arrangement of the CAAC-OS pellets 5100 on the substrate 5120 is schematically shown, it has a structure like bricks or blocks stacked (see Fig. 19(D)). The location where an inclination occurs between the pellets observed in Fig. 19(C) corresponds to the region 5161 shown in Fig. 19(D). Here, based on the Cs-corrected high-resolution TEM image, when the arrangement of the CAAC-OS pellets 5100 on the substrate 5120 is schematically shown, it has a structure like bricks or blocks stacked (see Fig. 19(D)). The location where an inclination occurs between the pellets observed in Fig. 19(C) corresponds to the region 5161 shown in Fig. 19(D).

[0279] Also, Fig. 20(A) shows a Cs-corrected high-resolution TEM image of the plane of CAAC-OS observed from a direction substantially perpendicular to the sample surface. Enlarged Cs-corrected high-resolution TEM images of the regions (1), (2), and (3) in Fig. 20(A) are shown in Fig. 20(B), Fig. 20(C), and Fig. 20(D), respectively. From Fig. 20(B), Fig. 20(C), and Fig. 20(D), it can be seen that the pellets Also, Fig. 20(A) shows a Cs-corrected high-resolution TEM image of the plane of CAAC-OS observed from a direction substantially perpendicular to the sample surface. Enlarged Cs-corrected high-resolution TEM images of the regions (1), (2), and (3) in Fig. 20(A) are shown in Fig. 20(B), Fig. 20(C), and Fig. 20(D), respectively. From Fig. 20(B), Fig. 20(C), and Fig. 20(D), it can be seen that the pellets Also, Fig. 20(A) shows a Cs-corrected high-resolution TEM image of the plane of CAAC-OS observed from a direction substantially perpendicular to the sample surface. Enlarged Cs-corrected high-resolution TEM images of the regions (1), (2), and (3) in Fig. 20(A) are shown in Fig. 20(B), Fig. 20(C), and Fig. 20(D), respectively. From Fig. 20(B), Fig. 20(C), and Fig. 20(D), it can be seen that the pellets Also, Fig. 20(A) shows a Cs-corrected high-resolution TEM image of the plane of CAAC-OS observed from a direction substantially perpendicular to the sample surface. Enlarged Cs-corrected high-resolution TEM images of the regions (1), (2), and (3) in Fig. 20(A) are shown in Fig. 20(B), Fig. 20(C), and Fig. 20(D), respectively. From Fig. 20(B), Fig. 20(C), and Fig. 20(D), it can be seen that the pellets , it can be confirmed that the metal atoms are arranged in a triangular, square, or hexagonal shape. However, no regularity is observed in the arrangement of the metal atoms between different pellets.

[0280] Next, CAAC-OS analyzed by X-ray diffraction (XRD) will be described. For example, for CAAC-OS having a crystal of InGaZnO, when a structural analysis is performed by the out-of-plane method, 4 a peak may appear near a diffraction angle (2θ) of 31° as shown in Fig. 21(A). Since this peak is attributed to the (009) plane of the InGaZnO crystal, it can be confirmed that the crystal of CAAC-OS has c-axis orientation and the c-axis is oriented in a direction substantially perpendicular to the formed surface or the upper surface. In the structural analysis of CAAC-OS by the out-of-plane method, in addition to the peak near 2θ of 31°, ZnO 4 a peak may also appear near 2θ of 36°. The peak near 2θ of 36° indicates that a part of CAAC-OS contains crystals having no c-axis orientation. More preferable CAAC-OS shows a peak near 2θ of 31° and does not show a peak near 2θ of 36° in the structural analysis by the out-of-plane method.

[0281] In the structural analysis of CAAC-OS by the out-of-plane method, in addition to the peak near 2θ of 31°, a peak may also appear near 2θ of 36°. The peak near 2θ of 36° indicates that a part of CAAC-OS contains crystals having no c-axis orientation. More preferable CAAC-OS shows a peak near 2θ of 31° and does not show a peak near 2θ of 36° in the structural analysis by the out-of-plane method. On the other hand, when a structural analysis is performed on CAAC-OS by the in-plane method in which X-rays are incident from a direction substantially perpendicular to the c-axis, a peak appears near 2θ of 56°. This peak is attributed to the (110) plane of the InGaZnO crystal. In the case of CAAC-OS, while fixing 2θ near 56°,

[0282] while rotating the sample with the normal vector of the sample surface as the axis (φ axis) for analysis. a peak appears near 2θ of 56°. This peak is attributed to the (110) plane of the InGaZnO crystal. In the case of CAAC-OS, while fixing 2θ near 56°, nGaZnO 4 while rotating the sample with the normal vector of the sample surface as the axis (φ axis) for analysis. while rotating the sample with the normal vector of the sample surface as the axis (φ axis) for analysis. Even when (φ scan) is performed, no distinct peak appears as shown in Fig. 21(B). To this contrary, if it is a single crystal oxide semiconductor of InGaZnO 4 , when φ is fixed at around 56° for 2θ and φ is scanned, six peaks attributable to crystal planes equivalent to the (110) plane are observed as shown in Fig. 21(C). Therefore, from the structural analysis using XRD, it can be confirmed that CAAC-OS has irregular orientations of the a-axis and b-axis.

[0283] Next, the CAAC-OS analyzed by electron diffraction will be described. For example, for CAAC-OS having a crystal of InGa ZnO 4 , when an electron beam with a probe diameter of 300 nm is incident parallel to the sample surface, a diffraction pattern (also referred to as a limited field transmission electron diffraction pattern) as shown in Fig. 22(A) may appear. This diffraction pattern contains spots attributable to the (009) plane of the InGaZnO crystal. Therefore, also by electron diffraction , it can be seen that the pellets contained in CAAC-OS have c-axis orientation, and the c-axis is oriented in a direction substantially perpendicular to the formed surface or the upper surface. On the other hand, Fig. 22(B) shows the diffraction pattern when an electron beam with a probe diameter of 300 nm is incident perpendicular to the sample surface for the same sample. From Fig. 2 4 2(B), a ring-shaped diffraction pattern is confirmed. Therefore, also by electron diffraction , it can be seen that the a-axis and b-axis of the pellets contained in CAAC-OS have no orientation . Note that the first ring in Fig. 22(B) is considered to be attributable to the (010) plane and the (100) plane, etc. of the InGaZnO crystal. Also, the second ring in Fig. 22(B) is considered to be attributable to the (110) plane, etc. . 4 and the like. Also, the second ring in Fig. 22(B) is considered to be attributable to the (110) plane, etc.

[0284] In addition, CAAC-OS is an oxide semiconductor with a low density of defect levels. Defects in the oxide semiconductor include, for example, defects caused by impurities and oxygen deficiencies. Therefore, CA AC-OS can also be said to be an oxide semiconductor with a low impurity concentration. Also, CAAC-O S can also be said to be an oxide semiconductor with few oxygen deficiencies.

[0285] Impurities contained in the oxide semiconductor may become carrier traps or carrier generation sources. Also, oxygen deficiencies in the oxide semiconductor may become carrier traps or become carrier generation sources by capturing hydrogen.

[0286] Note that impurities are elements other than the main components of the oxide semiconductor, such as hydrogen, carbon, silicon, and transition metal elements. For example, elements with a stronger binding force to oxygen than the metal elements constituting the oxide semiconductor, such as silicon, take oxygen from the oxide semiconductor and disrupt the atomic arrangement of the oxide semiconductor, becoming a factor in reducing crystallinity. Also, heavy metals such as iron and nickel, argon, carbon dioxide, etc., have a large atomic radius (or molecular radius), so they disrupt the atomic arrangement of the oxide semiconductor and become a factor in reducing crystallinity.

[0287] In addition, an oxide semiconductor with a low density of defect levels (few oxygen deficiencies) can have a low carrier density. Such an oxide semiconductor is called a high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor. CAAC-OS has a low impurity concentration and a low density of defect levels. That is it is likely to become a high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor. Therefore, a transistor using CA AC-OS has electrical characteristics (normally where the threshold voltage becomes negative)​​​ (Also referred to as “on”) rarely occurs. Further, a highly pure genuine or substantially highly pure genuine oxide semiconductor has few carrier traps. The charge trapped in the carrier traps of the oxide semiconductor takes a long time to be released and behaves like a fixed charge. Therefore, a transistor using an oxide semiconductor with a high impurity concentration and a high defect level density may have unstable electrical characteristics. On the other hand, a transistor using CAAC-OS has small fluctuations in electrical characteristics and becomes a highly reliable transistor.

[0288] Further, since CAAC-OS has a low defect level density, carriers generated by light irradiation or the like are rarely trapped in defect levels. Therefore, a transistor using CAAC-OS has small fluctuations in electrical characteristics due to irradiation with visible light or ultraviolet light.

[0289] Next, the microcrystalline oxide semiconductor will be described.

[0290] The microcrystalline oxide semiconductor has a region where a crystal part can be confirmed and a region where a clear crystal part cannot be confirmed in a high-resolution TEM image. The crystal part contained in the microcrystalline oxide semiconductor often has a size of 1 nm or more and 100 nm or less, or 1 nm or more and 10 nm or less. In particular, an oxide semiconductor having nanocrystals that are microcrystals of 1 nm or more and 10 nm or less, or 1 nm or more and 3 nm or less is called nc-OS (nanocrystalline Oxide Semiconductor). nc-OS may not clearly show grain boundaries in a high-resolution TEM image, for example. Note that the nanocrystals may have the same origin as the pellets in CAAC-OS. Therefore, hereinafter, nc- ​ The crystalline part of the OS may be referred to as a pellet.

[0291] nc-OS has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). Also, nc-OS has no regularity in the crystal orientation between different pellets. Therefore, no orientation is observed over the entire film. Thus, depending on the analysis method, nc-OS may not be distinguishable from an amorphous oxide semiconductor. For example, when performing structural analysis on nc-OS using an XRD apparatus that uses X-rays with a diameter larger than that of the pellet, no peak indicating a crystal plane is detected in the analysis by the out-of-plane method. Also, when performing electron diffraction (also referred to as limited-field electron diffraction) on nc-OS using an electron beam with a probe diameter larger than that of the pellet (for example, 50 nm or more), a diffraction pattern such as a halo pattern is observed. On the other hand, when performing nano-beam electron diffraction on nc-OS using an electron beam with a probe diameter close to the size of the pellet or smaller than the pellet, spots are observed. Also, when performing nano-beam electron diffraction on nc-OS, regions with high luminance may be observed so as to draw a circle (in a ring shape). Furthermore, multiple spots may be observed within the ring-shaped region.

[0292] As described above, since there is no regularity in the crystal orientation between the pellets (nanocrystals), nc -OS can also be referred to as an oxide semiconductor having RANC (Random Aligned nanocrystals), or an oxide semiconductor having NANC (Non-Aligned nanocrystals).

[0293] nc-OS is an oxide semiconductor with higher regularity than amorphous oxide semiconductors. Therefore , the density of defect energy levels in nc-OS is lower than that in amorphous oxide semiconductors. However, nc-O S does not show regularity in crystal orientation among different pellets. Therefore, nc-OS has a higher density of defect energy levels than C AAC-OS.

[0294] Next, amorphous oxide semiconductors will be described.

[0295] An amorphous oxide semiconductor is an oxide semiconductor in which the atomic arrangement in the film is irregular and has no crystalline part. An oxide semiconductor having an amorphous state like quartz is an example. In a high-resolution TEM image, no crystalline part can be confirmed in an amorphous oxide semiconductor.

[0296] When performing structural analysis on an amorphous oxide semiconductor using an XRD apparatus, no peak indicating a crystal plane is detected in the analysis by the out-of-p

[0297] lane method. Also, when performing electron diffraction on an amorphous oxide semiconductor, a halo pattern is observed. Also, when performing nano-beam electron diffraction on an amorphous oxide semiconductor, no spot is observed and only a halo pattern is observed. Regarding the amorphous structure, various views have been presented. For example, a structure with no order in the atomic arrangement is sometimes called a completely amorphous structure. Also, a structure having order in the nearest-neighbor atomic distance or the second-nearest-neighbor atomic distance and having no long-range order is sometimes called an amorphous structure. Therefore, according to the strictest definition, an oxide semiconductor having even a slight order in the atomic arrangement is non

[0298] crystalline.​​​​​​ It cannot be called a crystalline oxide semiconductor. Also, at least an oxide semiconductor having long-range order cannot be called an amorphous oxide semiconductor. Therefore, since it has a crystalline part, for example, CAAC-OS and nc-OS cannot be called amorphous oxide semiconductors or perfect amorphous oxide semiconductors. Furthermore, since it has a crystalline part, for example, CAAC-OS and nc-OS cannot be called amorphous oxide semiconductors or perfect amorphous oxide semiconductors. For example, CAAC-OS and nc-OS cannot be called amorphous oxide semiconductors or perfect amorphous oxide semiconductors. For example, CAAC-OS and nc-OS cannot be called amorphous oxide semiconductors or perfect amorphous oxide semiconductors.

[0299] In addition, an oxide semiconductor may have a structure between nc-OS and an amorphous oxide semiconductor. An oxide semiconductor having such a structure is particularly called an amorphous-like oxide semiconductor (a-like OS: amorphous-like Oxide Semiconductor). In addition, an oxide semiconductor may have a structure between nc-OS and an amorphous oxide semiconductor. An oxide semiconductor having such a structure is particularly called an amorphous-like oxide semiconductor (a-like OS: amorphous-like Oxide Semiconductor). In addition, an oxide semiconductor may have a structure between nc-OS and an amorphous oxide semiconductor. An oxide semiconductor having such a structure is particularly called an amorphous-like oxide semiconductor (a-like OS: amorphous-like Oxide Semiconductor). In addition, an oxide semiconductor may have a structure between nc-OS and an amorphous oxide semiconductor. An oxide semiconductor having such a structure is particularly called an amorphous-like oxide semiconductor (a-like OS: amorphous-like Oxide Semiconductor).

[0300] Voids may be observed in the high-resolution TEM image of a-like OS. Also, in the high-resolution TEM image, it has a region where a crystalline part can be clearly confirmed and a region where a crystalline part cannot be confirmed. Voids may be observed in the high-resolution TEM image of a-like OS. Also, in the high-resolution TEM image, it has a region where a crystalline part can be clearly confirmed and a region where a crystalline part cannot be confirmed. Voids may be observed in the high-resolution TEM image of a-like OS. Also, in the high-resolution TEM image, it has a region where a crystalline part can be clearly confirmed and a region where a crystalline part cannot be confirmed.

[0301] Because it has voids, a-like OS has an unstable structure. Hereinafter, to show that a-like OS has a more unstable structure than CAAC-OS and nc-OS, the change in structure due to electron irradiation is shown. Because it has voids, a-like OS has an unstable structure. Hereinafter, to show that a-like OS has a more unstable structure than CAAC-OS and nc-OS, the change in structure due to electron irradiation is shown. Because it has voids, a-like OS has an unstable structure. Hereinafter, to show that a-like OS has a more unstable structure than CAAC-OS and nc-OS, the change in structure due to electron irradiation is shown.

[0302] Prepare a-like OS (denoted as sample A), nc-OS (denoted as sample B), and CAAC-OS (denoted as sample C) as samples for electron irradiation. Any of the samples is an In-Ga-Zn oxide. Prepare a-like OS (denoted as sample A), nc-OS (denoted as sample B), and CAAC-OS (denoted as sample C) as samples for electron irradiation. Any of the samples is an In-Ga-Zn oxide. Prepare a-like OS (denoted as sample A), nc-OS (denoted as sample B), and CAAC-OS (denoted as sample C) as samples for electron irradiation. Any of the samples is an In-Ga-Zn oxide.

[0303] First, obtain the high-resolution cross-sectional TEM image of each sample. From the high-resolution cross-sectional TEM image, it can be seen that each sample has a crystalline part. First, obtain the high-resolution cross-sectional TEM image of each sample. From the high-resolution cross-sectional TEM image, it can be seen that each sample has a crystalline part.

[0304] Note that the determination of which part is regarded as one crystal part may be performed as follows. For example , InGaZnO 4 The unit cell of the crystal has three In-O layers and also has six Ga-Zn-O layers and is known to have a structure in which a total of nine layers are stacked in the c-axis direction. These The distance between these adjacent layers is about the same as the lattice plane spacing of the (009) plane (also referred to as the d value).) and the value is determined to be 0.29 nm from crystal structure analysis. Therefore, the portion where the lattice fringe spacing is between 0.28 nm and 0.30 nm can be regarded as the crystal part of InGaZnO . Note that the lattice fringe corresponds to the a-b plane of the InGaZnO 4 crystal. 4

[0305] FIG. 23 is an example in which the average size of the crystal parts (from 22 to 45 locations) of each sample was investigated . However, the length of the lattice fringe described above is regarded as the size of the crystal part. From FIG. 23, it can be seen that the crystal part of a-like OS increases as the cumulative electron irradiation dose increases. Specifically , as shown by (1) in FIG. 23, the crystal part (also referred to as the initial nucleus) having a size of about 1.2 nm at the initial stage of observation by TEM grows to a size of about 2.6 nm when the cumulative irradiation dose is 4.2×10 e / nm 8 . On the other hand, it can be seen that nc-OS and CAAC-OS do not show a change in the size of the crystal part in the range from the start of electron irradiation to a cumulative electron irradiation dose of 4.2×10 - e / nm 2 . Specifically S and CAAC-OS, it can be seen that there is no change in the size of the crystal part in the range up to 4.2×10 8 e - / nm 2 . Specifically ​​As shown by (2) and (3) in Fig. 23, regardless of the cumulative electron irradiation dose, the sizes of the crystal parts of nc-OS and CAAC-OS are about 1.4 nm and about 2.1 nm, respectively. It can be seen that this is the case.

[0306] Thus, crystal growth of a-like OS can be observed upon electron irradiation in some cases. On the other hand, it can be seen that crystal growth of nc-OS and CAAC-OS due to electron irradiation is hardly observed. That is, it can be seen that a-like OS has an unstable structure compared with nc-OS and CAAC- OS.

[0307] In addition, because it has looseness, a-like OS has a lower density structure compared with nc-OS and CAAC-OS. Specifically, the density of a-like OS is 78.6% or more and less than 92.3% of the density of a single crystal of the same composition. Also, the density of nc-OS and the density of CAAC- OS are 92.3% or more and less than 100% of the density of a single crystal of the same composition. An oxide semiconductor with a density of less than 78% of the density of a single crystal is difficult to form a film itself. For example, in an oxide semiconductor satisfying In:Ga:Zn = 1:1:1 [atomic ratio],

[0308] for example, in an oxide semiconductor satisfying In:Ga:Zn = 1:1:1 [atomic ratio], the density of a single crystal InGaZnO having a rhombohedral crystal structure 4 is 6.357 g / cm 3 Thus, for example, in an oxide semiconductor satisfying In:Ga:Zn = 1:1:1 [atomic ratio], the density of a-like OS is 5.0 g / cm or more and less than 5.9 g / cm 3 or less. Also, for example, in an oxide semiconductor satisfying In:Ga:Zn = 1:1:1 [atomic ratio], 3 the density of a-like OS is 5.0 g / cm or more and less than 5.9 g / cm , the density of nc-OS and the density of CAAC-OS are 5.9 g / cm 3 or more and less than 6.3 g / cm 3 .

[0309] Note that there may be no single crystal with the same composition. In that case, by combining single crystals with different compositions in any ratio, the density corresponding to the single crystal in the desired composition can be estimated . The density corresponding to the single crystal of the desired composition may be estimated using a weighted average with respect to the ratio of combining single crystals with different compositions. However, it is preferable to estimate the density by combining as few types of single crystals as possible . As described above, the oxide semiconductor has various structures, each having various characteristics .

[0310] Note that the oxide semiconductor may be, for example, a laminated film having two or more of an amorphous oxide semiconductor, an a-like OS, a microcrystalline oxide semiconductor, and a CAAC-OS . The CAAC-OS film can be formed, for example, by the following method

[0311] .

[0312] The CAAC-OS film is formed, for example, by a sputtering method using a target for sputtering an oxide semiconductor that is polycrystalline .

[0313] By increasing the substrate temperature during film formation, migration of sputtering particles occurs after reaching the substrate. Specifically, the film is formed with the substrate temperature being 100°C or higher and 740°C or lower, preferably 200°C or higher and 500°C or lower. By increasing the substrate temperature during film formation, when sputtering particles reach the substrate, migration occurs on the substrate, and the flatness of the sputtering particles ​​​A surface adheres to the substrate. At this time, since the sputtering particles are positively charged, the sputtering particles adhere to the substrate while repelling each other, so that the sputtering particles do not gather unevenly and overlap, and a CAAC-OS film with uniform thickness can be formed.

[0314] By reducing the incorporation of impurities during film formation, it is possible to suppress the breakdown of the crystal state due to impurities. For example, the concentration of impurities (such as hydrogen, water, carbon dioxide, and nitrogen) present in the film formation chamber may be reduced. Alternatively, the concentration of impurities in the film formation gas may be reduced. Specifically, a film formation gas having a dew point of -80°C or lower, preferably -100°C or lower, is used.

[0315] In addition, it is preferable to reduce the plasma damage during film formation by increasing the oxygen ratio in the film formation gas and optimizing the power. The oxygen ratio in the film formation gas is 30% by volume or more, preferably 100 % by volume.

[0316] Alternatively, the CAAC-OS film is formed by the following method.

[0317] First, a first oxide semiconductor film is formed with a thickness of 1 nm or more and less than 10 nm. The first oxide semiconductor film is formed by sputtering. Specifically, the substrate temperature is 100°C or higher and 500°C or lower, preferably 150°C or higher and 450°C or lower, and the oxygen ratio in the film formation gas is 30 % by volume or more, preferably 100% by volume, for film formation.

[0318] Next, a heat treatment is performed to obtain a first CAAC-OS film with high crystallinity from the first oxide semiconductor film. The temperature of the heat treatment is 350°C or higher and 740°C or lower, preferably 450°C or higher and 650 °C or lower. Also, the time of the heat treatment is 1 minute or more and 24 hours or less, preferably 6 minutes or more and 4 hours Make it less than or equal to the following. Also, the heat treatment may be performed in an inert atmosphere or an oxidizing atmosphere. Preferably, after performing the heat treatment in an inert atmosphere, perform the heat treatment in an oxidizing atmosphere. By the heat treatment in an inert atmosphere, the impurity concentration of the first oxide semiconductor film can be reduced in a short time. On the other hand, oxygen vacancies may be generated in the first oxide semiconductor film by the heat treatment in an inert atmosphere. In that case, the oxygen vacancies can be reduced by the heat treatment in an oxidizing atmosphere. Note that the heat treatment may be performed under a reduced pressure of 1000 Pa or less, 100 Pa or less, 10 Pa or less, or 1 Pa or less. Under reduced pressure, the impurity concentration of the first oxide semiconductor film can be reduced in an even shorter time.

[0319] Since the first oxide semiconductor film has a thickness of 1 nm or more and less than 10 nm, it can be more easily crystallized by heat treatment than when the thickness is 10 nm or more.

[0320] Next, a second oxide semiconductor film having the same composition as the first oxide semiconductor film is formed with a thickness of 10 nm or more and 5 0 nm or less. The second oxide semiconductor film is formed by a sputtering method. Specifically, the substrate temperature is set to 100°C or more and 500°C or less, preferably 150°C or more and 450 °C or less, and the oxygen ratio in the film-forming gas is set to 30 vol% or more, preferably 100 vol% for film formation.

[0321] Next, heat treatment is performed to cause solid-phase growth of the second oxide semiconductor film from the first CAAC-OS film to obtain a second CAAC-OS film with high crystallinity. The temperature of the heat treatment is 350 °C or more and 740°C or less, preferably 450°C or more and 650°C or less. Also, during the heat treatment The heating time is from 1 minute to 24 hours, preferably from 6 minutes to 4 hours. The heat treatment may be performed in an inert atmosphere or an oxidizing atmosphere. Preferably, the heat treatment is performed in an inert atmosphere. After that, a heat treatment is performed in an oxidizing atmosphere. The impurity concentration of the nitride semiconductor film can be reduced in a short time. Oxygen vacancies may be generated in the second oxide semiconductor film by the heat treatment. The oxygen vacancies can be reduced by heat treatment in a reactive atmosphere. The pressure may be reduced to 000 Pa or less, 100 Pa or less, 10 Pa or less, or 1 Pa or less. Under reduced pressure, the impurity concentration in the second oxide semiconductor film can be reduced in a shorter time. Cut.

[0322] In this manner, a CAAC-OS film having a total thickness of 10 nm or more is formed. can be done.

[0323] This embodiment may be combined, at least in part, with other embodiments described in this specification. It can be implemented in combination. [Explanation of symbols]

[0324] 51 Gas Tank 52 Flow meter 53 Chamber 54 Exhaust system 55 Exhaust system 56 Nozzle 57 Nozzle mouth 58 Drive unit 59 Stages 60 Substrates 61 Angle adjustment means 62 Vibrator 63 Raw material container 80 Touch Panel 100 Touch Panel 101 Substrate 102 Substrate 110 Display device 111 Display unit 112 Driving circuit 114 IC 120 Touch sensor 121 Electrode 122 Electrode 123 Dielectric layer 125 Insulating layer 131 Wiring 132 Wiring 140 FPC 141 FPC 142 FPC 143 FPC 144 Wiring 151 Adhesive layer 152 Adhesive layer 153 Adhesive layer 155 Connection terminal 156 Connection terminal 157 Connection layer 158 Connection layer 161 Transistor 162 Transistor 163 Transistor 164 Transistor 165 Conductive particles 166 Conductive layer 171 Insulating layer 172 Insulating layer 173 Insulating layer 175 Insulating layer 176 Insulating layer 178 Protective layer 180 Light-emitting element 181 Electrode 182 EL layer 183 Electrode 184 Color filter 185 Black matrix 191 Adhesive layer 192 Adhesive layer 310 Portable information terminal 312 Display panel 313 Hinge 315 Housing 320 Portable Information Terminal 322 Display Unit 325 Non-display Unit 330 Portable Information Terminal 333 Display Unit 335 Housing 336 Housing 337 Information 339 Operation Button 340 Portable Information Terminal 345 Portable Information Terminal 351 Housing 355 Information 356 Information 357 Information 358 Display Unit 501 Pulse Voltage Output Circuit 502 Current Detection Circuit 503 Capacitance 511 Transistor 512 Transistor 513 Transistor 800 Display Device 801 Display Unit 802 Gate Driver 803 Source Driver 804 D-A Conversion Circuit 810 Control Circuit 811 Detection Unit 820 Counter Circuit 850 Touch Sensor 5100 Pellet 5120 Substrate 5161 Region 7100 Portable Information Terminal 7101 Housing 7102 Display Unit 7103 Band 7104 Buckle 7105 Operation Button 7106 Input / Output Terminal 7107 Icon 7300 Display Device 7301 Housing 7302 Display Unit 7303 Operation Button Part 7304 Control Unit 7305 Mobile Phone 7400 Housing 7401 Display Unit 7402 Operation Button 7403 External Connection Port 7404 Speaker 7405 Microphone 7406

Claims

[Claim 1] A first substrate; a first insulating layer having a region overlying the first substrate; a conductive layer having a region overlying the first insulating layer; an electrode having a region located above the conductive layer; a second insulating layer having a region overlying the electrode; a second substrate having a region overlying the second insulating layer; the first insulating layer has an opening; An adhesive layer is provided between the conductive layer and the electrode, the adhesive layer has a plurality of conductive particles; one of the plurality of conductive particles has a region overlapping the first insulating layer and a region in contact with the conductive layer and the electrode; Another one of the plurality of conductive particles is located inside the opening.

Images