Film forming apparatus, control apparatus for film forming apparatus, and film forming method

Abstract

To provide a film deposition apparatus capable of improving an adhesion between a base material and an adhesion film without reducing the productivity, a control device of the film deposition apparatus, and a film deposition method.SOLUTION: A film deposition apparatus has a process chamber 50 and a treatment part FF1 that is arranged in the process chamber and forms an adhesion film on a base material S. An inner wall surface of the process chamber is formed with a material MS1 that has a large getter effect to a gas or water (H2O) remaining in the process chamber. A film deposition method repeats a first step and a second step at least two times or more, the first step for depositing a film of a material having a large getter effect to a gas or water (H2O) remaining in the process chamber and the second step for exhausting the process chamber for a predetermined time after the first step.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a film forming apparatus for forming a film on the surface of a base material including a printed circuit board and a flexible printed circuit board, a control apparatus for the film forming apparatus, and a film forming method.

Background Art

[0002] In a mounting process of mounting electronic components on a base material including a printed circuit board and a flexible printed circuit board, an adhesion layer serving as a base for wiring connected to the electronic components and a seed layer for forming the wiring by plating are formed. For forming each layer, for example, a plating method or a sputtering method is used.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] For example, in Patent Document 1, in order to form a thin film excellent in adhesion in a short time, after evacuating the gas in the vacuum chamber by evacuation, a gas discharge / replacement step of introducing a rare gas into the vacuum chamber and a film forming step of depositing a thin film forming substance on the adherend in a rare gas environment are performed. A thin film forming method in a low-pressure rare gas environment is described, in which the film forming step is performed after performing the gas discharge / replacement step at least twice or more. However, in the thin film forming method described in Patent Document 1, hydrogen and oxygen caused by water (H2O) gas are mixed in the interface between the adhesion film and the base material and in the film of the adhesion film, and sufficient adhesion between the adhesion film and the base material cannot be obtained.

[0005] Patent Document 2 describes a rare earth metal thin film deposition apparatus for depositing pure rare earth metal thin films, comprising a magnetron-type sputtering apparatus, a main cathode equipped with a rare earth metal main target, a substrate held by a substrate holder opposite the main target, and an auxiliary cathode with an active metal auxiliary target attached to the side of the substrate holder facing the inner wall of the chamber, and an inert gas introduction tube attached to the wall of the vacuum chamber. However, in the film deposition apparatus described in Patent Document 2, the auxiliary cathode to which the activated metal auxiliary target is attached faces the inner wall of the chamber at a position adjacent to the substrate and the substrate holder, making it insufficient as a getter to capture residual oxygen, nitrogen, etc. in the space other than the inner wall of the chamber.

[0006] The present invention has been made in view of the problems of the prior art described above, and aims to provide a film deposition apparatus, a control device for the film deposition apparatus, and a film deposition method that can improve the adhesion between a substrate and an adhesive film without reducing productivity. [Means for solving the problem]

[0007] To achieve the above objective, the invention described in claim 1 is a film deposition apparatus having a process chamber and a processing unit provided in the process chamber for forming an adhesive film on a substrate, wherein the inner wall surface of the process chamber is formed of a material that exhibits a large getter effect with respect to gas or water (H2O) remaining in the process chamber. To achieve the above objective, the invention described in claim 5 is a control device for a film deposition apparatus having a process chamber, a processing unit provided in the process chamber for forming an adhesive film on a substrate, an exhaust unit capable of vacuum-evacuating the process chamber, and a gas introduction unit for introducing a gas for forming the adhesive film into the process chamber, wherein the control device includes a storage unit for storing a control program, the control program comprising: a first step of forming a film in the process chamber of a substance that has a large getter effect with respect to gas or water (H2O) remaining in the process chamber; a second step of evacuating the process chamber for a predetermined time after the first step; and after the second step, the process The control device includes a third step of forming a film of a substance that has a large getter effect on gas or water (H2O) remaining in the process chamber inside the process chamber; a fourth step of exhausting the process chamber for a predetermined time after the third step; and an adhesion film forming step of forming an adhesion film on a substrate provided inside the process chamber after the fourth step. The control device is characterized by controlling the exhaust unit and the gas introduction unit so that the duty cycle D = P1 / P is between 34 percent and 66 percent, where P1 is the time of the first or third step, and P is the total time of the first and second steps or the total time of the third and fourth steps. To achieve the above objective, the invention described in claim 9 is a film-forming method comprising: a first step of forming a film of a substance that has a large getter effect on gas or water (H2O) remaining in the process chamber inside the process chamber; a second step of exhausting the process chamber for a predetermined time after the first step; a third step of forming a film of a substance that has a large getter effect on gas or water (H2O) remaining in the process chamber inside the process chamber after the second step; a fourth step of exhausting the process chamber for a predetermined time after the third step; and an adhesion film forming step of forming an adhesion film on a substrate provided in the process chamber after the fourth step. [Effects of the Invention]

[0008] According to the film deposition apparatus, control device for the film deposition apparatus, and film deposition method of the present invention, the adhesion between the substrate and the adhesive film can be improved without reducing productivity. Other features and advantages of the present invention will become apparent from the following description with reference to the accompanying drawings. In the accompanying drawings, the same or similar components are given the same reference numeral. [Brief explanation of the drawing]

[0009] [Figure 1] This is a cross-sectional view of a film deposition apparatus according to the first embodiment of the present invention, cut along a plane aligned with the vertical direction. [Figure 2] This figure shows a schematic configuration of the control system in the process chamber of the film deposition apparatus according to the first embodiment of the present invention. [Figure 3] This diagram shows the flow chart of the film formation method for Examples 1-1, 1-2, and 1-3 of the first embodiment of the present invention. [Figure 4] This figure shows specific operational examples of the film deposition procedure for Examples 1-1, 1-2, and 1-3 of the first embodiment of the present invention. [Figure 5] This figure shows specific operational examples of the film deposition procedure for Examples 1-1, 1-2, and 1-3 of the first embodiment of the present invention. [Figure 6] This figure shows specific operational examples of the film deposition procedure for Examples 1-1, 1-2, and 1-3 of the first embodiment of the present invention. [Figure 7] This figure shows specific operational examples of the film deposition procedure for Examples 1-1, 1-2, and 1-3 of the first embodiment of the present invention. [Figure 8] This figure shows specific operational examples of the film deposition procedure for Examples 1-1, 1-2, and 1-3 of the first embodiment of the present invention. [Figure 9] This is a schematic cross-sectional view of a film deposition apparatus according to a second embodiment of the present invention, obtained by cutting it with a plane parallel to the horizontal plane. [Figure 10] It is a diagram showing a schematic configuration of a control system in a load lock chamber and a process chamber of a film forming apparatus according to a second embodiment of the present invention. [Figure 11] It is a diagram showing the flow of a film forming method of Example 1-1, Example 1-2, and Example 1-3 according to a second embodiment of the present invention. [Figure 12] It is a diagram showing the flow of a film forming method of Example 2-1, Example 2-2, and Example 2-3 according to a second embodiment of the present invention. [Figure 13] It is a diagram showing the flow of a film forming method of Example 3-1, Example 3-2, and Example 3-3 according to a second embodiment of the present invention. [Figure 14] It is a diagram showing the flow of a film forming method of a conventional process. [Figure 15] It is a diagram showing an example of an output signal of a gas introduction system in a getter process of the present invention (first embodiment, second embodiment). [Figure 16] It is a diagram showing an example of an output signal of a power supply (IG) in a getter process of the present invention (first embodiment, second embodiment). [Figure 17] It is a diagram showing the relationship between the time of the getter process and the water (H2O) partial pressure in the process chamber after the getter process when the film forming methods of the first embodiment (Example 1-2), the second embodiment (Example 1-2, Example 2-2, Example 3-2), and the conventional process are applied. [Figure 18] It is a diagram showing the relationship between the duty ratio and the water (H2O) partial pressure in the process chamber after the getter process when the film forming methods of the first embodiment (Example 1-2), the second embodiment (Example 1-2, Example 2-2, Example 3-2), and the conventional process are used. [Figure 19] [[ID=3,6]]It is a diagram showing the relationship between the evacuation operation and the water (H2O) partial pressure in the process chamber when the film forming methods of the first embodiment (Example 1-2), the second embodiment (Example 1-2, Example 2-2, Example 3-2), and the conventional process are used.

Embodiments for Carrying Out the Invention

[0010] The inventors of this invention discovered the present invention based on the following findings. The inventors' findings will be explained using Figures 1, 2, and 3.

[0011] (First Embodiment) Figure 1 is a cross-sectional view of a film deposition apparatus according to the first embodiment of the present invention, cut along a plane parallel to the vertical direction. Here, the XY plane is a plane parallel to the horizontal plane, and the Z axis is an axis parallel to the vertical direction. The first major feature of the film deposition apparatus of the present invention is that the inner wall surface of the process chamber 50 is fitted with an anti-adhesion plate MS1 made of a material that has a large getter effect against gas or water (H2O) remaining in the process chamber 50, and functions as a getter material supply source MS1. The material with a large getter effect is, for example, titanium (Ti), and it is desirable that it be the material for the adhesion film. The adhesion film is preferably a film that serves as the base for wiring connected to electronic components on the substrate, and is preferably a Ti film, TiN film, Ta film, TaN film, Ni film, Cr film, NiCr alloy film, Ta alloy film, or Cu alloy film. The anti-adhesion plate MS1 is preferably installed on the upper surface of the inner wall of the process chamber 50 facing the substrate S, but it may also be installed on both sides of the inner wall of the process chamber 50 that do not face the substrate S. As shown in Figure 1, the film deposition apparatus of the present invention comprises a process chamber 50, a processing unit FF1 provided in the process chamber 50 for forming an adhesion film on a substrate S that serves as a base for wiring connected to electronic components, an exhaust unit V50 capable of vacuuming the process chamber 50, a gas introduction unit G1 for introducing gas for forming the adhesion film into the process chamber 50, a holding unit 60 for holding the substrate S in the process chamber 50, a drive unit (not shown) for moving the holding unit 60 holding the substrate S so that the substrate S passes through the film deposition region in the process chamber 50, a cooling unit (not shown) for cooling the holding unit 60, and a control device (not shown) for controlling the exhaust unit V50 and the gas introduction unit G1. Details of the control device will be explained in Figure 2 below. The control device includes a memory unit for storing the control program. The processing unit FF1 consists of a rotating cathode that rotates a support that holds multiple targets (T1, T2) and the ion gun I1. The target T1 is a substance that exhibits a large getter effect against gas or water (H2O) remaining in the process chamber 50, such as titanium (Ti), and is preferably the material of the adhesion film (Ti film, TiN film, Ta film, TaN film, Ni film, Cr film, NiCr alloy film, Ta alloy film, Cu alloy film) formed on the substrate S. The target T2 is preferably, for example, copper (Cu), and is the material for the seed film formed on the adhesion film. The seed film is preferably a film for forming wiring formed on the adhesion film, and is preferably a Cu film, a CuAl alloy film, or a CuW alloy film. As mentioned above, the inner wall surface of the process chamber 50 is fitted with an anti-adhesion plate that has a large getter effect against gas or water (H2O) remaining in the process chamber 50, and functions as a getter material supply source MS. In this state, if a voltage (not shown) is applied to the ion gun I1 to plasmaize the Ar gas, for example, the Ti protective plate MS1 can be sputtered, and a Ti film can be deposited on the inner wall of the process chamber 50 in the film deposition region FFA (the side facing the substrate S) and on the magnetic pole of the ion gun I1. Alternatively, instead of using the ion gun I1, a target T1 made of Ti may be used. In this case, the target T1 is directed away from the deposition region FFA (the side not facing the substrate S). When a voltage is applied to the target T1 in this state to plasmaize the Ar gas, a Ti film is deposited on the anti-deposition plate MS1, and a material with a large getter effect against the gas or water (H2O) remaining in the process chamber 50 is deposited on the inner wall of the process chamber 50 outside the deposition region FFA (the side not facing the substrate S).

[0012] Figure 2 is a block diagram showing the schematic configuration of the control system of the process chamber 50 in the film deposition apparatus 1 of the first embodiment of the present invention.

[0013] In Figure 2, the control device 1000 is a control unit that serves as a control means for controlling the process chamber 50 of the film deposition apparatus 1. This control device 1000 has a CPU 1001 that performs various processing operations such as calculations, control, and discrimination, and a ROM 1002 (also called a "memory unit") that stores control programs such as the processing described later in Figures 3 to 9, which are executed by the CPU 1001. The control device 1000 also has a RAM 1003 and a non-volatile memory 1004 that temporarily store data during the processing operation of the CPU 1001 and input data. The control device 1000 is also connected to an input operation unit 1005 that includes a keyboard or various switches for inputting predetermined commands or data, and a display unit 1006 that displays various information, including the input and setting status of the film deposition apparatus 1. Furthermore, the control device 1000 is connected to the power supply (SP) 1022 for the sputtering cathode of the process chamber 50, the power supply (IG) 1023 for the ion gun, the gas introduction system 1024, the substrate holder drive mechanism 1025, the pressure measuring instrument 1026, the holder transfer mechanism 1027, the cathode rotation mechanism 1028, and the exhaust section V50:1030, respectively, via drive circuits 1011 to 1017 and 1029.

[0014] (Example 1-1) Figure 3 is a diagram showing the flow of the film formation method for Examples 1-1, 1-2, and 1-3 of the first embodiment of the present invention. A major feature of the film formation method of the present invention is that, before the adhesion film formation step in which an adhesion film is formed on the substrate S provided in the process chamber 50 shown in Figure 1, a first step (step 102) is performed in which a substance with a large getter effect on the gas or water (H2O) remaining in the process chamber 50 is formed in the process chamber 50, and a second step (step 103) is performed after the first step (step 102) in which the process chamber 50 is exhausted for a predetermined time, and these steps are performed at least twice. As shown in Figure 3, the film formation method of the present invention includes a first step (step 102) of forming a film of a substance that has a large getter effect on gas or water (H2O) remaining in the process chamber 50 in a process chamber 50; a second step (step 103) of exhausting the process chamber 50 for a predetermined time after the first step (step 102); a third step (step 104) of forming a film of a substance that has a large getter effect on gas or water (H2O) remaining in the process chamber 50 in a process chamber 50 after the second step (step 103); a fourth step (step 105) of exhausting the process chamber 50 for a predetermined time after the third step (step 104); and an adhesion film formation step (step 107) of forming an adhesion film on a substrate S provided in the process chamber 50 after the fourth step (step 105). In this specification, "getter process" refers to the following, as shown in Figure 3: "a first step (step 102) in which a substance with a large getter effect on gas or water (H2O) remaining in the process chamber 50" and "a second step (step 103) in which the process chamber 50 is evacuated for a predetermined time after the first step (step 102)" or "a third step (step 104) in which a substance with a large getter effect on gas or water (H2O) remaining in the process chamber 50" and "a fourth step (step 105) in which the process chamber 50 is evacuated for a predetermined time after the third step (step 104)". A "getter process" refers to a process in which the getter process is performed at least two times. Steps 102 to 105 shown in Figure 3 are referred to as the "getter process". Therefore, in this specification, performing steps 102 and 103 or 104 and 105 shown in Figure 3 after step 104 is also referred to as the "getter process". As shown in Figure 3, the process may also include an etching step (step 101) to etch the surface of the substrate S before the first step (step 102), an etching step (step 106) to etch the surface of the substrate S after the fourth step (step 105), and etching steps (steps 101 and 106) to etch the surface of the substrate S before the first step (step 102) and after the fourth step (step 105). As shown in Figure 3, after the adhesion film formation step (step 107), a seed film formation step (step 107) may be included in which a seed film for forming wiring is formed on the adhesion film. The substrate S in step 101 or step 102 is preferably a Si substrate, a rectangular member made of glass or resin, or a resin film fixed to a support. The adhesion film in step 107 is preferably one of the following: Ti film, TiN film, Ta film, TaN film, Ni film, Cr film, NiCr alloy film, Ta alloy film, or Cu alloy film. The seed film in step 108 is preferably one of the following: a Cu film, a CuAl alloy film, or a CuW alloy film. When performing the etching process in step 101 or step 106, the holder that holds the multiple targets and ion gun is rotated to direct the ion gun I1 toward the film deposition region FFA (substrate S side). After the pressure in the process chamber 50 stabilizes from the gas introduction section G1, a voltage is applied to the ion gun I1 to plasmaize the Ar gas. Then, the substrate S is etched. When the etching process in step 101 or step 106 is completed, the voltage application to the ion gun I1 is stopped. When performing the first step in step 102 or the third step in step 104, the holder that holds the multiple targets and ion gun is rotated so that the ion gun I1 is directed away from the film deposition region FFA (the side not facing the substrate S). An anti-adhesion plate MS1 is installed on the inner wall of the process chamber 50 outside the film deposition region FFA as a getter material supply source MS1. When a voltage is applied to the ion gun I1 in this state to plasmaize Ar gas, the anti-adhesion plate MS1 is sputtered, and a material with a large getter effect against the gas or water (H2O) remaining on the inner wall of the process chamber 50 in the film deposition region FFA (the side facing the substrate S) can be deposited. In step 107, when performing the adhesion film formation process, the holder that holds multiple targets and ion guns is rotated to orient target T1 toward the film deposition area FFA (substrate S side). After the pressure in the process chamber 50 stabilizes, a preset power is supplied to target T1 to plasmaize the Ar gas. Then, an adhesion film is formed on the substrate S. In step 108, when performing the seed film formation process, the holder that holds multiple targets and ion guns is rotated to orient target T2 towards the film deposition region FFA (substrate S side). After the pressure in the process chamber 50 stabilizes, a preset power is supplied to target T2 to plasmaize the Ar gas. Then, a seed film is deposited on the adhesion film.

[0015] (Examples 1-2) Except for the first step in step 102 or the third step in step 104, the procedure is the same as in Example 1-1. The first step in step 102 or the third step in step 104 can also be performed with target T1. In this case, the holder that holds the multiple targets and ion guns is rotated so that target T1 is directed away from the deposition region FFA (the side not facing the substrate S). After the pressure in the process chamber 50 stabilizes, a preset power is supplied to target T1 to plasmaize the Ar gas. Then, a material with a large getter effect on the gas or water (H2O) remaining on the inner wall of the process chamber 50 outside the deposition region FFA can be deposited.

[0016] (Examples 1-3) Except for the first step in step 102 or the third step in step 104, the procedure is the same as in Example 1-1. The first step in step 102 or the third step in step 104 may be performed in combination with the method using the ion gun I1 and the method using the target T1 described above. A material with a large getter effect can be attached to the inner wall of the process chamber 50 in the film deposition region FFA (side facing the substrate S) and to the gas or water (H2O) remaining on the inner wall of the process chamber 50 in the film deposition region FFA (side facing the substrate S).

[0017] The ROM 1002 (also called the "memory unit") of the control device shown in Figure 2 stores the control program. The control program will be explained using the film deposition apparatus shown in Figure 1, the control device shown in Figure 2, and the film deposition method shown in Figure 3. The control program includes a first step (step 102) of depositing a material with a large getter effect on residual gas or water (H2O) in the process chamber 50, a second step (step 103) of exhausting the process chamber for a predetermined time after the first step (step 102), a third step (step 104) of depositing a material with a large getter effect on residual gas or water (H2O) in the process chamber 50 after the second step (step 103), a fourth step (step 105) of exhausting the process chamber 50 for a predetermined time after the third step (step 104), and after the fourth step (step 105) The process includes a step of forming an adhesive film on a substrate S provided in a process chamber 50, wherein when the time of the first step (step 102) or the third step (step 104) is P1, and the total time of the first step (step 102) and the second step (step 103) or the total time of the third step (step 104) and the fourth step (step 105) is P, the exhaust section V50 and the gas introduction section G1 are controlled so that the duty cycle D = P1 / P is between 34 percent and 66 percent.

[0018] The following describes specific operational examples of the film deposition apparatus of the first embodiment (Examples 1-1, 1-2, and 1-3) with reference to Figures 4 to 8.

[0019] (Example 1-1) First, as schematically shown in Figure 4, in order to form a film on the surface of the substrate S, the substrate S is transported into the process chamber 50 by a transport mechanism (not shown) and held in the holding section 60.

[0020] Next, as schematically shown in Figure 4 (corresponding to step 101 in Figure 3), the holder that holds the multiple targets and ion gun is rotated to direct the ion gun I1 towards the deposition area FFA (the side facing the substrate S). After the pressure in the process chamber 50 stabilizes from the gas introduction section G1, a voltage is applied to the ion gun I1 to plasmaize the Ar gas. Then, the substrate S is etched. As a result, the surface of the substrate S is planarized, roughened, cleaned and / or activated. When the etching process is complete, the voltage application to the ion gun I1 is stopped.

[0021] Next, as schematically shown in Figure 5 (corresponding to step 102 in Figure 3), the holder that holds the multiple targets and ion gun is rotated so that the ion gun I1 is directed away from the film deposition region FFA (the side not facing the substrate S). After the pressure in the process chamber 50 stabilizes from the gas introduction section G1, a voltage is applied to the ion gun I1 to plasmaize the Ar gas. An anti-deposition plate MS1 is installed on the inner wall of the chamber of the process chamber 50 outside the film deposition region FFA as a getter material supply source MS1. When a voltage is applied to the ion gun I1 in this state to plasmaize the Ar gas, the anti-deposition plate MS1 is sputtered, and a material with a large getter effect against the gas or water (H2O) remaining on the inner wall of the process chamber 50 in the film deposition region FFA (the side facing the substrate S) can be deposited. Furthermore, it is desirable that the Ar gas supplied to the process chamber 50 be supplied using the gas introduction section G1, starting to enter the process chamber 50 at the same time as the start of the first process (step 102 in Figure 3), and stopping the supply to the process chamber at the same time as the end of the first process. Furthermore, it is desirable to start exhausting the process chamber 50 using the exhaust unit V50 before or simultaneously with the start of the first process (step 102 in Figure 3). Furthermore, it is desirable that the power supplied to the process chamber 50 be supplied using the power supply (SP) or power supply (IG) shown in Figure 2, with the power supply to the process chamber starting simultaneously with the start of the first process and stopping simultaneously with the end of the first process.

[0022] After depositing a material with a large getter effect on the inner wall surface of the process chamber 50, the supply of Ar gas from the gas introduction section G1 into the process chamber 50 is stopped, and the process chamber 50 is exhausted for a predetermined time using the exhaust section V50 (corresponding to step 103 in Figure 3). This completes the first getter process (corresponding to steps 102 and 103 in Figure 3).

[0023] When starting the second getter process (the third step: step 104 and the fourth step: step 105 in Figure 3), as schematically shown in Figure 5 (corresponding to step 104 in Figure 3), a voltage is applied to the ion gun I1 after the pressure in the process chamber 50 has stabilized from the gas introduction section G1 to plasmaize the Ar gas. On the inner wall of the process chamber 50 outside the film deposition region FFA, an anti-deposition plate MS1 is installed as a getter material supply source MS1. When a voltage is applied to the ion gun I1 in this state to plasmaize the Ar gas, the anti-deposition plate MS1 is sputtered, and a material with a large getter effect against the gas or water (H2O) remaining on the inner wall of the process chamber 50 in the film deposition region FFA (the side facing the substrate S) can be deposited. Furthermore, it is desirable that the Ar gas supplied to the process chamber 50 be supplied using the gas introduction section G1, starting to be supplied into the process chamber 50 at the same time as the start of the third process (step 104 in Figure 3), and stopping the supply into the process chamber at the same time as the end of the third process. Furthermore, it is desirable that the power supplied to the process chamber 50 be supplied using the power supply (SP) or power supply (IG) shown in Figure 2, with the power supply to the process chamber starting simultaneously with the start of the third process and stopping simultaneously with the end of the third process.

[0024] After depositing a material with a large getter effect on the inner wall surface of the process chamber 50, the supply of Ar gas from the gas introduction section G1 into the process chamber 50 is stopped, and the process chamber 50 is exhausted for a predetermined time using the exhaust section V50 (corresponding to step 105 in Figure 3). This completes the second getter process (corresponding to steps 104 and 105 in Figure 3), and the "getter process" in Figure 3 is finished.

[0025] Next, as schematically shown in Figure 7 (corresponding to step 107 in Figure 3), the holder that holds the multiple targets and ion guns is rotated to orient target T1 towards the film deposition area (the side facing the substrate S). After the pressure in the process chamber 50 stabilizes, a preset power is supplied to target T1 to plasmaize the Ar gas. Then, an adhesive film can be deposited on the substrate S.

[0026] Next, as schematically shown in Figure 8 (corresponding to step 108 in Figure 3), the holder that holds the multiple targets and ion guns is rotated to orient target T2 towards the deposition area (the side facing the substrate S). After the pressure in the process chamber 50 stabilizes, a preset power is supplied to target T2 to plasmaize the Ar gas. Then, a seed film can be deposited on the substrate S.

[0027] (Examples 1-2) The first step of step 102 or the third step of step 104 shown in Figure 3 can also be performed with target T1. In this case, as schematically shown in Figure 6 (corresponding to step 102 or step 104 in Figure 3), the holder that holds the multiple targets and ion guns is rotated to orient target T1 away from the deposition region FFA (the side not facing the substrate S). After the pressure in the process chamber 50 stabilizes, a preset power is supplied to target T1 to plasmaize the Ar gas. Then, a material with a large getter effect on the gas or water (H2O) remaining on the inner wall of the process chamber 50 outside the deposition region FFA can be deposited.

[0028] (Examples 1-3) Furthermore, the first step of step 102 or the third step of step 104 shown in Figure 3 may be performed in combination with the method using the ion gun I1 and the method using the target T1 described above. In this case, as shown in Figure 5, the ion gun I1 is directed away from the deposition region FFA (the side not facing the substrate S). At this time, the target T1 is positioned facing the side wall of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 has stabilized, a voltage is applied to the ion gun I1 to supply a preset power to the target T1 and plasmaize the Ar gas. A material with a large getter effect can be deposited on the side wall of the inner wall of the process chamber 50 in the deposition region FFA (the side facing the substrate S) and on the inner wall of the process chamber 50 in the deposition region FFA (the side facing the substrate S). Furthermore, the method of using both the ion gun I1 and the target T1 described above is also possible in the case of Figure 6. In this case, as schematically shown in Figure 6 (corresponding to step 102 or step 104 in Figure 3), the holder that holds the multiple targets and ion guns is rotated so that target T1 is directed away from the film deposition region FFA (the side not facing the substrate S). In this case, the ion gun I1 is positioned facing the side wall of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 has stabilized, a voltage is applied to the ion gun I1 to supply a preset power to target T1 and plasmaize the Ar gas. A material with a large getter effect can be deposited on the side wall of the inner wall of the process chamber 50 in the film deposition region FFA (the side facing the substrate S) and on the inner wall of the process chamber 50 in the film deposition region FFA (the side facing the substrate S). Furthermore, the method of using the ion gun I1 and the method of using the target T1, as described above, can also be achieved by combining the cases shown in Figure 5 and Figure 6. In this case, as shown in Figure 5, the ion gun I1 is directed away from the deposition region FFA (the side not facing the substrate S). In this state, after the pressure in the process chamber 50 has stabilized, a voltage is applied to the ion gun I1 to plasmaize the Ar gas. A material with a large getter effect is attached to the side wall of the inner wall of the process chamber 50 in the deposition region FFA (the side facing the substrate S) and to the inner wall of the process chamber 50 in the deposition region FFA (the side facing the substrate S). At this time, the anti-adhesion plate MS1 formed on the upper inner wall of the process chamber 50 is sputtered by the ion gun I1. In this state, as shown in Figure 6, the holder that holds the multiple targets and ion gun is rotated so that target T1 is directed away from the deposition region FFA (the side not facing the substrate S), so that target T1 faces the upper inner wall of the process chamber 50. After the pressure in the process chamber 50 stabilizes, a preset power is supplied to target T1 to plasmaize the Ar gas. This makes it possible to deposit a material with a large getter effect on the protective plate MS1 formed on the upper inner wall of the process chamber 50, which has been sputtered by the ion gun I1.

[0029] (Second Embodiment) Hereinafter, with reference to the attached drawings, a film deposition apparatus, a control device for the film deposition apparatus, and a film deposition method according to a second embodiment of the present invention will be described through Examples 1-1 to 3-3.

[0030] Figure 9 is a schematic cross-sectional view of a film deposition apparatus according to one embodiment of the present invention, cut by a plane parallel to the horizontal plane. The film deposition apparatus 1 in Figure 9 consists of a process chamber 50, a platform 10 which can be used to transfer substrate S between the process chamber and other apparatus other than the film deposition apparatus, and a load lock chamber 30 which can be used to transfer untreated substrate S provided from the platform 10 and film-deposited substrate S provided from the process chamber 50. The basic configuration of the process chamber 50 in the second embodiment is the same as the basic configuration of the process chamber in the first embodiment, but differs from the basic configuration of the process chamber in that the processing unit FF consists of a first processing unit FF1 and a second processing unit FF2. The first major feature of the film deposition apparatus shown in Figure 9 is that the inner wall surface of the process chamber 50 is fitted with an anti-adhesion plate made of a material (e.g., a Ti film) that has a large getter effect against gas or water (H2O) remaining in the process chamber 50, and functions as a getter material supply source MS. The getter material supply source MS differs from the getter material supply source MS1 of the first embodiment in that it consists of a first getter material supply source MS1 of the first processing unit FF1 and a second getter material supply source MS2 of the second processing unit FF2. Here, the XY plane is a plane parallel to the horizontal plane, and the Z axis is an axis parallel to the vertical direction. The film deposition apparatus is configured as an apparatus for forming a film on a substrate S. The substrate S can be transported and processed, for example, while being held by a carrier CR.

[0031] The film deposition apparatus shown in this embodiment is a plasma processing apparatus capable of performing multiple types of processing in a single processing chamber. A plasma processing apparatus capable of performing multiple types of processing in a single processing chamber does not require a different processing chamber for each process, thus reducing the overall area occupied by the apparatus and thus being advantageous for space saving. In this embodiment, switching between processes is achieved by rotating a support that holds multiple targets and ion guns.

[0032] The film deposition apparatus includes a process chamber 50 for forming a film on a substrate S, as well as a platform 10 and a load lock chamber 30 equipped with a heating mechanism. The platform 10 is used to transfer the substrate S between other devices. The load lock chamber 30 is equipped with an exhaust section V30 that can evacuate the load lock chamber 30, and the process chamber 50 is equipped with an exhaust section V50 that can evacuate the process chamber 50. The exhaust sections V30 and V50 are vacuum pumps such as dry pumps and turbomolecular pumps. A gate valve 20 is provided between the platform 10 and the load lock chamber 30, and a gate valve 40 is provided between the load lock chamber 30 and the process chamber 50. The substrate S is transported while being held by a carrier CR. A transport device for transporting the carrier CR is incorporated into the load lock chamber 30 and the process chamber 50.

[0033] The transport device in the load lock chamber 30 includes a mechanism for operating a carrier CR containing unprocessed substrate S provided from the platform 10 and a carrier CR containing substrate S after film formation, provided from the process chamber 50. The operating mechanism 72 drives, for example, a container capable of holding multiple substrates S along the X-axis. Substrate S is transported between the platform 10 and the load lock chamber 30 by a transport mechanism (not shown). Carrier CR is transported between the load lock chamber 30 and the process chamber 50 by a transport mechanism 74.

[0034] The transport device for the process chamber 50 includes a transfer mechanism for transferring the carrier CR, which is transported from the load lock chamber 30, to the holding unit 60 within the process chamber 50, and a holding unit 60 for holding the carrier CR within the process chamber 50. The holding unit 60 has a first chuck CH1 and a second chuck CH2, which are located on opposite sides of each other. The first chuck CH1 and the second chuck CH2 may include, for example, electrostatic chucks or mechanical chucks. The film deposition apparatus shown in Figure 9 includes a drive unit for moving the holding unit 60, which holds the carrier CR, along a movement path TP so that the substrate S passes through the film deposition area FFA within the process chamber 50. The drive unit may employ, for example, a linear motor or a ball screw mechanism. The movement path TP is, for example, parallel to the surface of the substrate S to be processed.

[0035] The substrate S may be, for example, a Si substrate, a rectangular member made of glass or resin, or a resin film fixed to a support. Examples of rectangular members made of resin include glass epoxy substrates and build-up substrates. Examples of resin films include polyimide films. Furthermore, the substrate S may be a laminate of polyimide, epoxy, phenol, or polybenzoxazole resins as an interlayer insulating film. Here, the substrate S, being a laminate of resin, may have a wiring layer formed on it, or it may be a laminate where the resin is coated onto the base material without any wiring formation. However, the shape and material of the substrate S are not limited to any particular type.

[0036] The film deposition apparatus shown in Figure 9 may include a processing unit FF that performs the steps of: directing the plasma source away from the film deposition region FFA to deposit a material (e.g., a Ti film) with a large getter effect on the gas or water (H2O) remaining on the inner wall of the chamber; and etching and film formation on the substrate S passing through the film deposition region FFA. Here, the film deposition region FFA is the region on the substrate S where etching and film formation occur.

[0037] The processing unit FF may be configured to prevent the material from adhering to the substrate S during the process of depositing a material (e.g., a Ti film) that has a large getter effect on the gas or water (H2O) remaining on the inner wall of the process chamber 50 other than the film deposition region FFA. The processing unit FF may also be configured to perform etching and film formation on the substrate S both when the substrate S is moving in a first direction along the movement path TP and when the substrate S is moving in a second direction opposite to the first direction along the movement path TP. The processing unit FF may be arranged to simultaneously perform etching and film formation on two carriers held by the holding unit 60 such that the surfaces of the substrate S to be processed face opposite each other, and may include a first processing unit FF1 that forms a film on the first carrier and a second processing unit FF2 that forms a film on the second carrier. The film deposition region FFA may be located between the first processing unit FF1 and the second processing unit FF2. Furthermore, the first processing unit FF1 and the second processing unit FF2 are separated by a separation unit SP provided in the holding unit 60, so that they do not face each other while the substrate S is moving and undergoing etching and film formation.

[0038] Furthermore, the processing FF may include a getter material supply source MS for depositing a material (e.g., a Ti film) with a large getter effect on the gas or water (H2O) remaining on the inner wall of the chamber other than the film deposition region FFA, a plasma generation unit for generating plasma to deposit the material (e.g., a Ti film) on the inner wall of the chamber other than the film deposition region FFA, and a plasma generation unit for generating plasma for etching and film formation in the film deposition region FFA. For example, the processing FF may consist of a rotating cathode that rotates a support holding multiple targets and ion guns, but this is just one example. The processing FF may have other configurations.

[0039] The first processing unit may include a target T1, a target T2, an ion gun I1, and a getter material supply source MS1 for depositing a material with a large getter effect (e.g., a Ti film) onto the gas or water (H2O) remaining on the inner wall of the chamber other than the film deposition region FFA. For example, the getter material supply source MS1 for depositing a material with a large getter effect (e.g., a Ti film) onto the inner wall of the chamber other than the film deposition region FFA may consist of a Ti anti-deposition plate, a Ti target, or an anti-deposition plate made of a material other than Ti on which a Ti film has been deposited.

[0040] Similarly, the second processing unit may include a target T3, a target T4, an ion gun I2, and a getter material supply source MS2 for depositing a material (e.g., a Ti film) that exhibits a large getter effect on the gas or water (H2O) remaining on the inner wall of the chamber other than the film deposition region FFA. For example, the getter material supply source MS2 for depositing a material (e.g., a Ti film) that exhibits a large getter effect on the inner wall of the chamber other than the film deposition region FFA may consist of a Ti anti-deposition plate or a Ti target.

[0041] The holding portion 60 is equipped with a cooling portion for cooling the holding portion 60. By cooling the holding portion 60, the substrate S held by the holding portion 60 is cooled, which can suppress deformation of the substrate S, for example.

[0042] The following describes the processing procedure for substrate S in the film deposition apparatus. Hereafter, the substrates S will be referred to as substrate S1, S2, S3, and S4 to distinguish them from each other. First, substrates S1 and S2 are placed on the first carrier and second carrier, respectively, on the platform 10. The first carrier on which substrate S1 is placed and the second carrier on which substrate S2 is placed move to the load lock chamber 30, and the load lock chamber 30 is evacuated by the exhaust section V30. When heat treatment is performed in the load lock chamber 30, the substrate S is heated by a lamp heater when the pressure in the load lock chamber 30 falls below a predetermined pressure. Here, in order to process substrate S1 on the first carrier and substrate S2 on the second carrier simultaneously, the surfaces to be processed of substrate S1 on the first carrier and substrate S2 on the second carrier have surfaces facing opposite directions, with the surface to be processed of substrate S1 facing the +X direction and the surface to be processed of substrate S2 facing the -X direction.

[0043] Next, the operating mechanism 72 of the load lock chamber 30 prepares for transport to the process chamber 50, and the first carrier moves to the process chamber 50 and is transferred to the holding unit 60 provided within the process chamber 50. The same operation is performed for the second carrier. Here, the two carriers CR are held in the holding unit 60 provided within the process chamber 50 so that the surfaces to be processed of the substrate S installed on each carrier CR face opposite each other, with the surface to be processed of substrate S1 facing in the +X direction and the surface to be processed of substrate S2 facing in the -X direction. With the first and second carriers held in the holding unit 60 of the process chamber 50 with their surfaces to be processed facing opposite each other, they move along the movement path TP and pass through the film formation region FFA within the process chamber 50, thereby etching and film formation for both carriers simultaneously.

[0044] When the first and second carriers are positioned in the process chamber 50, the load lock chamber 30 is vented, the substrates S3 and S4 are placed on the third and fourth carriers on the platform 10, the third and fourth carriers with substrates S3 and S4 on them are moved to the load lock chamber 30, and the load lock chamber 30 is evacuated by the exhaust section V30 in sequence. If heat treatment is to be performed in the load lock chamber 30, the substrates S are heated by the lamp heater when the pressure in the load lock chamber 30 falls below a predetermined pressure.

[0045] After etching and film formation have been performed on the first and second carriers in the process chamber 50, the load lock chamber 30 is prepared for transport by the operating mechanism 72. After the transport preparation operation is complete, the first carrier is transferred from the holding unit 60 located in the process chamber 50 to the transport mechanism 74, and then the first carrier is moved to the load lock chamber 30. After the first carrier, which has been etched and film formed in the process chamber 50, is discharged to the load lock chamber 30, the operating mechanism 72 in the load lock chamber 30 is prepared for transport to move the third carrier to the process chamber 50. Then the third carrier is moved to the process chamber 50. After the third carrier has been moved to the process chamber 50, the second carrier is moved to the load lock chamber 30 by the same operation as the first carrier. After the second carrier has been moved from the process chamber 50 to the load lock chamber 30, the fourth carrier is moved to the process chamber 50 by the same operation as the second carrier. After the third and fourth carriers have been moved to the process chamber 50, the gate valve 40 is closed. After closing the gate valve 40, the load lock chamber 30 is vented, the first carrier and the second carrier are moved to the platform 10, and the substrates S1 and S2 are removed from their respective carriers CR. At the same time, in the process chamber 50, the third carrier and the fourth carrier are transferred to the holding section 60, and etching and film formation are performed.

[0046] When the third and fourth carriers are positioned in the process chamber 50, the load lock chamber 30 is vented, the base materials S5 and S6 are placed on the first and second carriers on the platform 10, the first and second carriers with the base materials S5 and S6 placed on them are moved to the load lock chamber 30, and the load lock chamber 30 is vacuumed by the exhaust section V30. If heat treatment is to be performed in the load lock chamber 30, the base materials S are heated by the lamp heater when the pressure in the load lock chamber 30 falls below a predetermined pressure.

[0047] After etching and film formation have been performed on the third and fourth carriers in the process chamber 50, the load lock chamber 30 is prepared for transport by the operating mechanism 72. After the transport preparation is complete, the third carrier is transferred from the holding unit 60 in the process chamber 50 to the transport mechanism 74, and then moved to the load lock chamber 30. The same operation is performed for the fourth carrier. After the carriers that have been etched and film formed in the process chamber 50 are discharged to the load lock chamber 30, the operating mechanism 72 in the load lock chamber 30 is prepared for transport to move the first carrier to the process chamber 50. Then the first carrier is moved to the process chamber 50. The same operation is performed for the second carrier. After closing the gate valve 40, the load lock chamber 30 is vented, and the third and fourth carriers are moved to the platform 10, respectively, and the substrates S3 and S4 are removed from their respective carriers. At the same time, in the process chamber 50, the first carrier and the second carrier are transferred to the holding unit 60, and etching and film formation are performed on the substrate S5 mounted on the first carrier and the substrate S6 mounted on the second carrier. Continuous processing is achieved by repeating the above operations.

[0048] Figure 10 is a block diagram showing the schematic configuration of the control system for the load lock chamber and process chamber in the film deposition apparatus 1 of the second embodiment of the present invention. The difference between the control system of Example 1-1 in Figure 11 and the control system in Figure 2 is that the control device 1000 includes a control unit as a control means for controlling the load lock chamber 10 of the film deposition apparatus 1.

[0049] In Figure 10, the control device 1000 is a control unit that serves as a control means for controlling the load lock chamber 10 and process chamber 50 of the film deposition apparatus 1. This control device 1000 has a CPU 1001 that performs various processing operations such as calculations, control, and discrimination, and a ROM 1002 (also called a "storage unit") that stores control programs such as the processing described later in Figures 11 to 13 and Figures 15 to 16, which are executed by the CPU 1001. The control device 1000 also has a RAM 1003 and a non-volatile memory 1004 that temporarily store data during the processing operation of the CPU 1001 and input data. The control device 1000 is also connected to an input operation unit 1005 that includes a keyboard or various switches for inputting predetermined commands or data, and a display unit 1006 that displays various information, including the input and setting status of the film deposition apparatus 1. Furthermore, the control device 1000 is connected to the power supply 1018 for the load lock chamber 30, the gas introduction system 1019, the substrate holder drive mechanism 1020, the pressure measuring instrument 1021, and the power supply (SP) 1022 for the sputtering cathode of the process chamber 50, the power supply (IG) 1023 for the ion gun, the gas introduction system 1024, the substrate holder drive mechanism 1025, the pressure measuring instrument 1026, the holder transfer mechanism 1027, the cathode rotation mechanism 1028, and the exhaust section V50:1030, respectively, via drive circuits 1007 to 1017 and 1029.

[0050] The control program is stored in ROM1002 (also called the "memory unit"). The control program consists of a first step (step 102 in Figure 2) in which a material with a large getter effect on residual gas or water (H2O) in the process chamber 50 is deposited in the process chamber 50; a second step (step 103 in Figure 2) in which the process chamber is evacuated for a predetermined time after the first step (step 102 in Figure 2); a third step (step 104 in Figure 2) in which a material with a large getter effect on residual gas or water (H2O) in the process chamber 50 is deposited in the process chamber 50 after the second step (step 103 in Figure 2); and a fourth step (step 104 in Figure 2) in which the process chamber 50 is evacuated for a predetermined time after the third step (step 104 in Figure 2). The process includes a step 105) and, after the fourth step (step 105 in Figure 2), an adhesion film formation step (step 107 in Figure 2) in which an adhesion film is formed on a substrate S provided in the process chamber 50. The exhaust section V50 and the gas introduction section G1 are controlled such that the duty cycle D = P1 / P is between 34 percent and 66 percent, where P1 is the time of the third step (step 104 in Figure 2) and P is the total time of the first step (step 102 in Figure 2) and the second step (step 103 in Figure 2) or the total time of the third step (step 104 in Figure 2) and the fourth step (step 105 in Figure 2).

[0051] (Example 1-1) Figure 11 is a flowchart showing the film deposition methods for Examples 1-1, 1-2, and 1-3 when using the film deposition apparatus of the second embodiment. Each step will be described below with reference to this flowchart. The basic configuration of the getter step 33 is the same as the film deposition method when using the film deposition apparatus of the first embodiment in Figure 2. That is, the getter step 33 in Figure 11 consists of steps 102 to 105 of the film deposition method in Figure 2. The difference between the film deposition method in Example 1-1 in Figure 11 and the film deposition method in Figure 2 is the addition of the following steps: carrier transfer (step 31), target cleaning process for the adhesion film (step 34), target cleaning process for the seed film (step 36), and carrier discharge process (step 38).

[0052] In step 31, the carrier CR is transferred to the holding unit 60 in the process chamber 50.

[0053] Step 32 involves performing an etching process. The holder that holds multiple targets and ion guns is rotated to direct the ion guns I1 and I2 towards the film deposition region FFA (the side facing the substrate S). After the pressure in the process chamber 50 stabilizes from the gas introduction section G1, a voltage is applied to the ion guns I1 and I2 to plasmaize the Ar gas. Then, to perform the etching process, the carrier is transported toward the film deposition region FFA and the substrate S is etched by passing it through the film deposition region FFA a specified number of times at a preset transport speed. When the etching process is complete, the voltage application to the ion guns I1 and I2 is stopped. In this embodiment, Ar gas was used as the introduction gas, but it is not limited to this, and reactive gases such as nitrogen, oxygen, and hydrogen can also be used.

[0054] In step 33, a getter process is performed. The holder that holds multiple targets and ion guns is rotated so that the ion guns I1 and I2 are directed away from the deposition region FFA (the side not facing the substrate S). On the inner wall of the process chamber 50 outside the deposition region FFA, an anti-deposition plate made of a material (e.g., a Ti film) that has a large getter effect on the gas or water (H2O) remaining on the inner wall of the process chamber 50 is installed as a getter material supply source MS. When a voltage is applied to the ion guns I1 and I2 to plasmaize the Ar gas, the anti-deposition plate is sputtered, and the aforementioned material (e.g., a Ti film) can be deposited on the inner wall of the chamber outside the deposition region FFA and on the magnetic poles of the ion guns I1 and I2. This "getter process" involves repeating the getter process (steps 102 and 103 in Figure 3 or steps 104 and 105 in Figure 3), which consists of sputtering the anti-adhesion plate MS and exhausting the wastewater after sputtering, two or more times. Therefore, it is desirable to continue until the pressure in the process chamber 50 or the partial pressure of water (H2O) falls below a predetermined pressure. If a reactive gas is used in the getter process of step 33, the introduction of the reactive gas should be stopped before the start of step 34.

[0055] In step 34, a cleaning process for the targets used in adhesion film formation is performed. The holder that holds the multiple targets and ion gun is rotated so that targets T1 and T3 (for example, both Ti targets) are directed away from the film deposition region FFA (the side not facing the substrate S). After the pressure in the process chamber 50 stabilizes, power is applied to targets T1 and T3 to plasmaize the Ar gas, and targets T1 and T3 are cleaned for a predetermined time at a preset power.

[0056] Step 35 involves the formation of an adhesion film. The holder that holds multiple targets and ion guns is rotated to direct targets T1 and T3 (for example, both Ti targets) towards the film deposition area FFA (the side facing the substrate S). After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T1 and T3 (for example, both Ti targets) to plasmaize the Ar gas. Then, in order to deposit an adhesion film (for example, a Ti film) on the substrate S, the carrier is transported toward the film deposition area FFA and passed through the film deposition area FFA a specified number of times at a preset transport speed, thereby depositing an adhesion film (for example, a Ti film) on the substrate S.

[0057] Step 36 involves cleaning the targets used for seed film formation. The holder that holds the multiple targets and ion gun is rotated so that targets T2 and T4 (for example, both Cu targets) are directed away from the film deposition region FFA (the side not facing the substrate S). After the pressure in the process chamber 50 stabilizes, power is applied to targets T2 and T4 (for example, both Cu targets) to plasmaize the Ar gas, and targets T2 and T4 (for example, both Cu targets) are cleaned at a predetermined power for a predetermined time.

[0058] Step 37 involves the seed film formation process. The holder that holds multiple targets and ion guns is rotated to direct targets T2 and T4 (for example, both Cu targets) towards the film deposition region FFA (the side facing the substrate S). After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T2 and T4 (for example, both Cu targets) to plasmaize the Ar gas. Then, in order to deposit a seed film (for example, a Cu film) on the adhesion film (for example, a Ti film), carrier transport is started toward the film deposition region FFA, and the carriers are passed through the film deposition region FFA a specified number of times at a preset transport speed, thereby depositing a seed film (for example, a Cu film) on the adhesion film (for example, a Ti film) deposited on the substrate S.

[0059] In step 38, the carrier is removed from the holding unit 60 in the process chamber 50, and the carrier CR is discharged from the process chamber 50.

[0060] According to this embodiment 1-1, by providing a getter material supply source MS separately from the cathode for film formation, it becomes unnecessary to install a target as a getter material supply source on the rotating cathode, and the getter process can be performed without being limited by the type of sputtered film. In addition, in addition to the area on the inner wall of the chamber where a material with a large getter effect (e.g., a Ti film) is attached by ion beam sputtering, the anti-adhesion plate MS (e.g., Ti), which is the getter material supply source MS, is activated by ion beam irradiation and acts as an adsorption surface for gas molecules. Therefore, the area of ​​the adsorption surface on which gas molecules are adsorbed is increased, and a high getter effect can be obtained. Furthermore, by performing the getter process multiple times in the getter process, the surface on which gas molecules are adsorbed can be activated with each getter process, thereby promoting the adsorption effect, and when the supply of Ar gas is stopped, water (H2O) gas is also quickly exhausted along with the Ar gas, thus promoting the cleaning of the process chamber 50. Furthermore, according to this embodiment 1-1, by continuously measuring the pressure inside the process chamber 50 or the partial pressure of water (H2O) inside the process chamber 50 with a quadrupole mass spectrometer RGA, the getter process can be continued until the pressure falls below a predetermined level, thereby stabilizing the atmosphere inside the process chamber 50 during the formation of the adhesive film.

[0061] (Examples 1-2) Next, using the flowchart of the film deposition method for Example 1-1 in Figure 11, we will explain the film deposition method for Example 1-2, which is a modified version of Example 1-1. The difference between the film deposition method for Example 1-2 and the film deposition method for Example 1-1 lies in step 33. The basic configuration of the getter step 33 is the same as that of the film deposition method in Figure 2. That is, the getter step 33 in Figure 11 consists of steps 102 to 105 of the film deposition method in Figure 2. The getter process consists of steps 102 and 103 or steps 104 and 105 of the film deposition method in Figure 2. Step 33 will be explained below with reference to the flowchart in Figure 11 and Figure 6. Steps 31, 32, and 34 through 38 are the same as those in Example 1-1, so their explanation will be omitted.

[0062] Step 33 of Example 1-2: In the getter step, as shown in Figure 6, the holder that holds the multiple targets and ion guns is rotated so that targets T1 and T3 are directed away from the film deposition region FFA (the side not facing the substrate S). After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T1 and T3 to plasmaize the Ar gas. Then, a material with a large getter effect can be deposited on the gas or water (H2O) remaining on the inner wall of the process chamber 50 outside the film deposition region FFA.

[0063] (Examples 1-3) Next, using the flowchart of the film deposition method for Example 1-1 in Figure 11, we will explain the film deposition method for Example 1-3, which is a modified version of Example 1-1. The difference between the film deposition method for Example 1-3 and the film deposition method for Example 1-1 lies in step 33. The basic configuration of the getter step 33 is the same as that of the film deposition method in Figure 2. That is, the getter step 33 in Figure 11 consists of steps 102 to 105 of the film deposition method in Figure 2. The getter process consists of steps 102 and 103 or steps 104 and 105 of the film deposition method in Figure 2. Step 33 will be explained below with reference to the flowchart in Figure 11 and Figure 5. Steps 31, 32, and 34 through 38 are the same as those in Example 1-1, so their explanation will be omitted.

[0064] Step 33 of Example 1-3: In the getter process, the method using ion guns I1 and I2 described above and the method using targets T1 and T3 are used in combination. In this case, as shown in Figure 5, ion guns I1 and I2 are directed away from the film deposition region FFA (the side not facing the substrate S). At this time, targets T1 and T3 are positioned facing the side walls of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 has stabilized, a voltage is applied to ion guns I1 and I2 to supply a preset power to targets T1 and T3 and plasmaize the Ar gas. A material with a large getter effect can be attached to the side walls of the inner wall of the process chamber 50 in the film deposition region FFA (the side facing the substrate S) and to the inner wall of the process chamber 50 in the film deposition region FFA (the side facing the substrate S). Furthermore, the method of using ion guns I1 and I2 and targets T1 and T3 in combination is also possible in the case of Figure 6. In this case, as shown in Figure 6, the holder that holds the multiple targets and ion guns is rotated so that targets T1 and T3 are directed away from the film deposition region FFA (the side not facing the substrate S). In this case, ion guns I1 and I2 are positioned facing the side walls of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 has stabilized, a voltage is applied to ion guns I1 and I2 to supply a preset power to targets T1 and T3 and plasmaize the Ar gas. A material with a large getter effect can be deposited on the side walls of the inner wall of the process chamber 50 in the film deposition region FFA (the side facing the substrate S) and on the inner wall of the process chamber 50 in the film deposition region FFA (the side facing the substrate S). Furthermore, the method of using ion guns I1 and I2 as described above in combination with the method of using targets T1 and T3 can also be achieved by combining the cases shown in Figure 5 and Figure 6. In this case, as shown in Figure 5, the ion guns I1 and I2 are directed away from the deposition region FFA (the side not facing the substrate S). In this state, after the pressure in the process chamber 50 has stabilized, a voltage is applied to the ion guns I1 and I2 to plasmaize the Ar gas. A material with a large getter effect is attached to the side walls of the inner wall of the process chamber 50 in the deposition region FFA (the side facing the substrate S) and to the inner wall of the process chamber 50 in the deposition region FFA (the side facing the substrate S) to which gas or water (H2O) remains. At this time, the anti-adhesion plates MS1 and MS2 formed on the upper inner wall of the process chamber 50 are sputtered by ion guns I1 and I2. In this state, as shown in Figure 6, the holder that holds the multiple targets and ion guns is rotated so that targets T1 and T3 are directed away from the deposition region FFA (the side not facing the substrate S), so that targets T1 and T3 face the upper inner wall of the process chamber 50. After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T1 and T3 to plasmaize the Ar gas. This makes it possible to deposit materials with a large getter effect on the protective plates MS1 and MS2 formed on the upper inner wall of the process chamber 50, which have been sputtered by the ion guns I1 and I2.

[0065] (Example 2-1) In Example 1-1 of Figure 11 described above, an example in which a getter process is performed between the etching process and the adhesion film formation process was explained, but the getter process may also be performed before the etching process. An example in which the getter process is performed before the etching process is described below as Example 2-1. Figure 12 is a flowchart showing the processing procedure of the film formation method for Examples 2-1, 2-2, and 2-3. The basic configuration of the getter process and getter step 42 is the same as the film formation method in Figure 2. That is, the getter step 42 in Figure 6 consists of steps 102 to 105 of the film formation method in Figure 2. The getter process consists of steps 102 and 103 or steps 104 and 105 of the film formation method in Figure 2.

[0066] In step 41, the carrier CR is transferred to the holding unit 60 in the process chamber 50.

[0067] In step 42, the getter process is performed. The holder that holds multiple targets and ion guns is rotated so that ion guns I1 and I2 are directed away from the deposition region FFA. On the inner wall of the process chamber 50 outside the deposition region FFA, an anti-deposition plate (e.g., made of Ti) is installed as a getter material supply MS. When voltage is applied to the ion guns I1 and I2 to plasmaize Ar gas, the anti-deposition plate (e.g., made of Ti) is sputtered, and a material with a large getter effect (e.g., a Ti film) can be deposited on the inner wall of the chamber outside the deposition region FFA and on the magnetic poles of the ion guns. This "getter process" is a getter process in which sputtering of the Ti anti-deposition plate and exhaust after sputtering are performed as a series of operations, and since this operation is repeated two or more times, it is desirable to continue until the pressure inside the process chamber 50 or the partial pressure of H2O falls below a predetermined pressure.

[0068] Step 43 involves performing an etching process. The holder that holds multiple targets and ion guns is rotated to direct the ion guns I1 and I2 towards the film deposition region FFA. After the pressure in the process chamber 50 stabilizes, a voltage is applied to the ion guns I1 and I2 to plasmaize the Ar gas. Then, to perform the etching process, the carrier CR is transported toward the film deposition region FFA and etched by passing it through the film deposition region FFA (the side facing the substrate S) a specified number of times at a preset transport speed. The voltage application to the ion guns I1 and I2 is stopped when the etching process is complete. In this embodiment, Ar gas was used as the gas introduced from the gas introduction section G1, but it is not limited to this, and reactive gases such as nitrogen, oxygen, and hydrogen can also be used.

[0069] Step 44 involves cleaning the targets used for adhesion film formation. The holder that holds the multiple targets and ion gun is rotated so that targets T1 and T3 (for example, both are Ti targets) are directed away from the film deposition region FFA (the side not facing the substrate S). After the pressure in the process chamber 50 stabilizes, power is applied to targets T1 and T3 (for example, both are Ti targets) to plasmaize the Ar gas, and targets T1 and T3 (for example, both are Ti targets) are cleaned at a predetermined power for a set time.

[0070] Step 45 involves the adhesion film formation process. The holder that holds multiple targets and ion guns is rotated to direct targets T1 and T3 (for example, both Ti targets) towards the film deposition area FFA (the side facing the substrate S). After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T1 and T3 (for example, both Ti targets) to plasmaize the Ar gas. Then, in order to deposit an adhesion film (for example, a Ti film), the transport of carrier CR toward the film deposition area FFA is started, and the carrier CR is passed through the film deposition area FFA a specified number of times at a preset transport speed, thereby depositing an adhesion film (for example, a Ti film) on the substrate S.

[0071] Step 46 involves cleaning the targets used for seed film formation. The holder that holds the multiple targets and ion gun is rotated so that targets T2 and T4 (for example, both Cu targets) are directed away from the film deposition region FFA. After the pressure in the process chamber 50 stabilizes, power is applied to targets T2 and T4 (for example, both Cu targets) to plasmaize the Ar gas, and targets T2 and T4 (for example, both Cu targets) are cleaned at a predetermined power for a set time.

[0072] Step 47 involves the seed film formation process. The holder, which holds multiple targets and ion guns, is rotated to direct targets T2 and T4 (for example, both Cu targets) towards the film deposition area FFA (the side facing the substrate S). After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T2 and T4 (for example, both Cu targets) to plasmaize the Ar gas. Then, in order to deposit a seed film (for example, a Cu film), the carrier CR is transported toward the film deposition area FFA and passed through the film deposition area FFA a specified number of times at a preset transport speed, thereby depositing a seed film (for example, a Cu film) on the adhesive film formed on the substrate S.

[0073] In step 48, the carrier is removed from the holding unit 60 in the process chamber 50, and the carrier CR is discharged from the process chamber 50.

[0074] According to this embodiment 2-1, a material with a large getter effect (e.g., a Ti film) can be attached to the inner wall of the chamber other than the film deposition region FFA before the etching process. Furthermore, since a material with a large getter effect (e.g., a Ti film) is coated on the magnetic pole of the ion gun during the getter process, an active adsorption surface with getter activity is exposed in the film deposition region FFA during the etching process. As a result, water (H2O) gas released from the substrate S during etching can be adsorbed in real time.

[0075] (Example 2-2) Next, using the flowchart of the film deposition method for Example 2-1 in Figure 12, we will explain the film deposition method for Example 2-2, which is a modified version of Example 2-1. The difference between the film deposition method for Example 2-2 and the film deposition method for Example 2-1 lies in step 42. The basic configuration of the getter step 42 is the same as that of the film deposition method in Figure 2. That is, the getter step 33 in Figure 12 consists of steps 102 to 105 of the film deposition method in Figure 2. The getter process consists of steps 102 and 103 or steps 104 and 105 of the film deposition method in Figure 2. Step 42 will be explained below with reference to the flowchart in Figure 12 and Figure 6. Steps 41 and 43 through 48 are the same as those in Example 2-1, so their explanation will be omitted.

[0076] Step 42 of Example 2-2: In the getter step, as shown in Figure 6, the holder that holds the multiple targets and ion guns is rotated so that targets T1 and T3 are directed away from the film deposition region FFA (the side not facing the substrate S). After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T1 and T3 to plasmaize the Ar gas. Then, a material with a large getter effect can be deposited on the gas or water (H2O) remaining on the inner wall of the process chamber 50 outside the film deposition region FFA.

[0077] (Examples 2-3) Next, using the flowchart of the film deposition method for Example 2-1 in Figure 12, we will explain the film deposition method for Example 2-3, which is a modified version of Example 2-1. The difference between the film deposition method for Example 2-3 and the film deposition method for Example 2-1 lies in step 42. The basic configuration of the getter step 42 is the same as that of the film deposition method in Figure 2. That is, the getter step 42 in Figure 12 consists of steps 102 to 105 of the film deposition method in Figure 2. The getter process consists of steps 102 and 103 or steps 104 and 105 of the film deposition method in Figure 2. Step 42 will be explained below with reference to the flowchart in Figure 12 and Figure 5. Steps 41 and 43 through 48 are the same as those in Example 2-1, so their explanation will be omitted.

[0078] Step 33 of Example 2-3: In the getter process, the method using ion guns I1 and I2 described above and the method using targets T1 and T3 are used in combination. In this case, as shown in Figure 5, ion guns I1 and I2 are directed away from the film deposition region FFA (the side not facing the substrate S). At this time, targets T1 and T3 are positioned facing the side walls of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 has stabilized, a voltage is applied to ion guns I1 and I2 to supply a preset power to targets T1 and T3 and plasmaize the Ar gas. A material with a large getter effect can be attached to the side walls of the inner wall of the process chamber 50 in the film deposition region FFA (the side facing the substrate S) and to the inner wall of the process chamber 50 in the film deposition region FFA (the side facing the substrate S). Furthermore, the method of using ion guns I1 and I2 and targets T1 and T3 in combination is also possible in the case of Figure 6. In this case, as shown in Figure 6, the holder that holds the multiple targets and ion guns is rotated so that targets T1 and T3 are directed away from the film deposition region FFA (the side not facing the substrate S). In this case, ion guns I1 and I2 are positioned facing the side walls of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 has stabilized, a voltage is applied to ion guns I1 and I2 to supply a preset power to targets T1 and T3 and plasmaize the Ar gas. A material with a large getter effect can be deposited on the side walls of the inner wall of the process chamber 50 in the film deposition region FFA (the side facing the substrate S) and on the inner wall of the process chamber 50 in the film deposition region FFA (the side facing the substrate S). Furthermore, the method of using ion guns I1 and I2 as described above in combination with the method of using targets T1 and T3 can also be achieved by combining the cases shown in Figure 5 and Figure 6. In this case, as shown in Figure 5, the ion guns I1 and I2 are directed away from the deposition region FFA (the side not facing the substrate S). In this state, after the pressure in the process chamber 50 has stabilized, a voltage is applied to the ion guns I1 and I2 to plasmaize the Ar gas. A material with a large getter effect is attached to the side walls of the inner wall of the process chamber 50 in the deposition region FFA (the side facing the substrate S) and to the inner wall of the process chamber 50 in the deposition region FFA (the side facing the substrate S) to which gas or water (H2O) remains. At this time, the anti-adhesion plates MS1 and MS2 formed on the upper inner wall of the process chamber 50 are sputtered by ion guns I1 and I2. In this state, as shown in Figure 6, the holder that holds the multiple targets and ion guns is rotated so that targets T1 and T3 are directed away from the deposition region FFA (the side not facing the substrate S), so that targets T1 and T3 face the upper inner wall of the process chamber 50. After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T1 and T3 to plasmaize the Ar gas. This makes it possible to deposit materials with a large getter effect on the protective plates MS1 and MS2 formed on the upper inner wall of the process chamber 50, which have been sputtered by the ion guns I1 and I2.

[0079] (Example 3-1) In Example 1-1 described above, an example was given in which the getter process is performed between the etching process and the adhesion film formation process, and in Example 2-1, an example was given in which the getter process is performed before the etching process. However, the getter process may be performed both before the etching process and between the etching process and the adhesion film formation process. An example in which the getter process is performed both before the etching process and between the etching process and the adhesion film formation process is described below as Example 3-1. Figure 13 is a flowchart of the film formation method for Examples 3-1, 3-2, and 3-3. The basic configuration of getter process 52 and getter process 54 is the same as the film formation method in Figure 2. That is, getter process 42 in Figure 6 consists of steps 102 to 105 of the film formation method in Figure 2. The getter process consists of steps 102 and 103 or steps 104 and 105 of the film formation method in Figure 2.

[0080] In step 51, the carrier CR is transferred to the holding unit 60 in the process chamber 50.

[0081] In step 52, the getter process is performed. The holder that holds multiple targets and ion guns is rotated so that ion guns I1 and I2 are directed away from the deposition region FFA. A protective plate (e.g., made of Ti) is installed on the inner wall of the process chamber 50 outside the deposition region FFA as a getter material supply MS. When voltage is applied to the ion guns I1 and I2 to plasmaize Ar gas, the protective plate (e.g., made of Ti) is sputtered, and a Ti film can be deposited on the inner wall of the chamber outside the deposition region FFA and on the magnetic poles of the ion guns I1 and I2. This "getter process" is a getter process in which sputtering of the Ti protective plate and exhausting after sputtering are performed as a series of operations, and since this operation is repeated two or more times, it is desirable to continue until the pressure inside the process chamber 50 or the partial pressure of H2O falls below a predetermined pressure.

[0082] Step 53 involves performing an etching process. The holder that holds multiple targets and ion guns is rotated to direct the ion guns I1 and I2 towards the film deposition region FFA. After the pressure in the process chamber 50 stabilizes from the gas introduction section G1, a voltage is applied to the ion guns I1 and I2 to plasmaize the Ar gas. Then, to perform the etching process, the carrier CR is transported toward the film deposition region FFA and etched by passing it through the film deposition region FFA a specified number of times at a preset transport speed. The voltage application to the ion guns is stopped when the etching process is complete. In this embodiment, Ar gas was used as the introduction gas, but it is not limited to this, and reactive gases such as nitrogen, oxygen, and hydrogen can also be used.

[0083] Step 54 involves performing a getter process. The holder that holds multiple targets and ion guns is rotated to direct ion guns I1 and I2 away from the deposition region FFA. A protective plate (e.g., made of Ti) is installed on the inner wall of the process chamber 50 outside the deposition region FFA as a getter material supply MS. When voltage is applied to the ion guns I1 and I2 to plasmaize Ar gas, the protective plate (e.g., made of Ti) is sputtered, and a material with a large getter effect (e.g., a Ti film) can be deposited on the inner wall of the chamber outside the deposition region FFA and on the magnetic poles of the ion guns I1 and I2. This "getter process" is a getter process in which sputtering of the Ti protective plate and exhausting after sputtering are performed as a series of operations, and since this operation is repeated two or more times, it is desirable to continue until the pressure inside the process chamber 50 or the partial pressure of H2O falls below a predetermined pressure.

[0084] Step 55 involves cleaning the targets used for adhesion film formation. The holder that holds the multiple targets and ion gun is rotated so that targets T1 and T3 (e.g., Ti targets) are directed away from the film deposition region FFA (the side not facing the substrate S). After the pressure in the process chamber stabilizes, power is applied to targets T1 and T3 (e.g., Ti targets) to plasmaize the Ar gas, and targets T1 and T3 (e.g., Ti targets) are cleaned at a predetermined power for a set time.

[0085] Step 56 involves the adhesion film formation process. The holder that holds multiple targets and ion guns is rotated to direct targets T1 and T3 (for example, both Ti targets) towards the film deposition region FFA. After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T1 and T3 (for example, both Ti targets) to plasmaize the Ar gas. Then, in order to deposit an adhesion film (for example, a Ti film), the transport of carrier CR toward the film deposition region FFA is started, and the carrier CR is passed through the film deposition region FFA a specified number of times at a preset transport speed, thereby depositing an adhesion film (for example, a Ti film) on the substrate S.

[0086] Step 57 involves cleaning the targets used for seed film formation. The holder that holds the multiple targets and ion gun is rotated so that targets T2 and T4 (for example, both Cu targets) are directed away from the film deposition region FFA (the side not facing the substrate S). After the pressure in the process chamber 50 stabilizes, power is applied to the Cu targets to plasmaize the Ar gas, and targets T2 and T4 (for example, both Cu targets) are cleaned at a predetermined power for a set time.

[0087] Step 58 involves the seed film formation process. The holder, which holds multiple targets and ion guns, is rotated to direct targets T2 and T4 (for example, both Cu targets) towards the film deposition area FFA (the side facing the substrate S). After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T2 and T4 (for example, both Cu targets) to plasmaize the Ar gas. Then, in order to deposit a seed film (for example, a Cu film), the carrier CR is transported toward the film deposition area FFA and passed through the film deposition area FFA a specified number of times at a preset transport speed, thereby depositing a seed film (for example, a Cu film) on the adhesive film formed on the substrate S.

[0088] In step 59, the carrier CR is removed from the holding unit 60 in the process chamber 50, and the carrier CR is discharged from the process chamber 50.

[0089] This embodiment 3-1 can achieve the effects of both embodiments 1-1 and 2-1 described above. Specifically, it can be expected to achieve both a real-time getter effect during the etching process and the purification of the atmosphere in the process chamber before the adhesion film formation process.

[0090] (Example 3-2) Next, using the flowchart of the film deposition method for Example 3-1 in Figure 13, we will explain the film deposition method for Example 3-2, which is a modified version of Example 3-1. The difference between the film deposition method for Example 3-2 and the film deposition method for Example 3-1 lies in steps 52 and 54. The basic configuration of getter steps 52 and 54 is the same as that of the film deposition method in Figure 2. That is, getter steps 52 and 54 in Figure 13 consist of steps 102 to 105 of the film deposition method in Figure 2. The getter process consists of steps 102 and 103 or steps 104 and 105 of the film deposition method in Figure 2. Steps 52 and 54 will be explained below with reference to the flowchart in Figure 13 and Figure 6. Steps 51, 53, and 55 through 58 are the same as those in Example 3-1, so their explanation will be omitted.

[0091] Steps 52 and 54 of Example 3-2: In the getter process, as shown in Figure 6, the holder that holds the multiple targets and ion guns is rotated so that targets T1 and T3 are directed away from the film deposition region FFA (the side not facing the substrate S). After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T1 and T3 to plasmaize the Ar gas. Then, a material with a large getter effect can be deposited on the gas or water (H2O) remaining on the inner wall of the process chamber 50 outside the film deposition region FFA.

[0092] (Example 3-3) Next, using the flowchart of the film deposition method for Example 3-1 in Figure 13, we will explain the film deposition method for Example 3-3, which is a modified version of Example 3-1. The difference between the film deposition method for Example 3-3 and the film deposition method for Example 3-1 lies in steps 52 and 54. The basic configuration of getter steps 52 and 54 is the same as that of the film deposition method in Figure 2. That is, getter steps 52 and 54 in Figure 13 consist of steps 102 to 105 of the film deposition method in Figure 2. The getter process consists of steps 102 and 103 or steps 104 and 105 of the film deposition method in Figure 2. Steps 52 and 54 will be explained below with reference to the flowchart in Figure 13 and Figure 5. Steps 51, 53, and 55 through 58 are the same as those in Example 3-1, so their explanation will be omitted.

[0093] Steps 52 and 54 of Example 3-3: In the getter process, the method using ion guns I1 and I2 as described above and the method using targets T1 and T3 are used in combination. In this case, as shown in Figure 5, ion guns I1 and I2 are directed away from the film deposition region FFA (the side not facing the substrate S). At this time, targets T1 and T3 are positioned facing the side walls of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 has stabilized, a voltage is applied to ion guns I1 and I2 to supply a preset power to targets T1 and T3 and plasmaize the Ar gas. A material with a large getter effect can be attached to the side walls of the inner wall of the process chamber 50 in the film deposition region FFA (the side facing the substrate S) and to the inner wall of the process chamber 50 in the film deposition region FFA (the side facing the substrate S). Furthermore, the method of using ion guns I1 and I2 and targets T1 and T3 in combination is also possible in the case of Figure 6. In this case, as shown in Figure 6, the holder that holds the multiple targets and ion guns is rotated so that targets T1 and T3 are directed away from the film deposition region FFA (the side not facing the substrate S). In this case, ion guns I1 and I2 are positioned facing the side walls of the inner wall of the process chamber 50. In this state, after the pressure in the process chamber 50 has stabilized, a voltage is applied to ion guns I1 and I2 to supply a preset power to targets T1 and T3 and plasmaize the Ar gas. A material with a large getter effect can be deposited on the side walls of the inner wall of the process chamber 50 in the film deposition region FFA (the side facing the substrate S) and on the inner wall of the process chamber 50 in the film deposition region FFA (the side facing the substrate S). Furthermore, the method of using ion guns I1 and I2 as described above in combination with the method of using targets T1 and T3 can also be achieved by combining the cases shown in Figure 5 and Figure 6. In this case, as shown in Figure 5, the ion guns I1 and I2 are directed away from the deposition region FFA (the side not facing the substrate S). In this state, after the pressure in the process chamber 50 has stabilized, a voltage is applied to the ion guns I1 and I2 to plasmaize the Ar gas. A material with a large getter effect is attached to the side walls of the inner wall of the process chamber 50 in the deposition region FFA (the side facing the substrate S) and to the inner wall of the process chamber 50 in the deposition region FFA (the side facing the substrate S) to which gas or water (H2O) remains. At this time, the anti-adhesion plates MS1 and MS2 formed on the upper inner wall of the process chamber 50 are sputtered by ion guns I1 and I2. In this state, as shown in Figure 6, the holder that holds the multiple targets and ion guns is rotated so that targets T1 and T3 are directed away from the deposition region FFA (the side not facing the substrate S), so that targets T1 and T3 face the upper inner wall of the process chamber 50. After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T1 and T3 to plasmaize the Ar gas. This makes it possible to deposit materials with a large getter effect on the protective plates MS1 and MS2 formed on the upper inner wall of the process chamber 50, which have been sputtered by the ion guns I1 and I2.

[0094] (Comparative example) The adhesion film formation process was carried out using a conventional process (as described in Patent Document 1 above) that does not involve the getter process of the present invention. Figure 14 is a flowchart showing the processing procedure of the film formation method without the getter process.

[0095] In step 61, the carrier CR is transferred to the holding unit 60 in the process chamber 50.

[0096] Step 62 involves performing an etching process. The holder that holds multiple targets and ion guns is rotated to direct the ion guns I1 and I2 towards the film deposition region FFA. After the pressure in the process chamber 50 stabilizes, a voltage is applied to the ion guns I1 and I2 to plasmaize the Ar gas. Then, to perform the etching process, the carrier CR is transported toward the film deposition region FFA and etched by passing it through the film deposition region FFA a specified number of times at a preset transport speed. The voltage application to the ion guns I1 and I2 is stopped when the etching process is complete. In this embodiment, Ar gas was used as the introduction gas, but it is not limited to this, and reactive gases such as nitrogen, oxygen, and hydrogen can also be used.

[0097] Step 63 involves cleaning the targets used for adhesion film formation. The holder that holds the multiple targets and ion gun is rotated so that targets T1 and T3 (for example, both are Ti targets) are directed away from the film deposition region FFA. After the pressure in the process chamber 50 stabilizes, power is applied to targets T1 and T3 (for example, both are Ti targets) to plasmaize the Ar gas, and targets T1 and T3 (for example, both are Ti targets) are cleaned for a predetermined time at a preset power.

[0098] Step 64 involves the adhesion film formation process. The holder that holds multiple targets and ion guns is rotated to direct targets T1 and T3 (for example, both Ti targets) towards the film deposition region FFA (the side facing the substrate S). After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T1 and T3 (for example, both Ti targets) to plasmaize the Ar gas. Then, in order to deposit an adhesion film (for example, a Ti film), the transport of carrier CR toward the film deposition region FFA is started, and the carrier CR is passed through the film deposition region FFA a specified number of times at a preset transport speed, thereby depositing an adhesion film (for example, a Ti film) on the substrate S.

[0099] Step 65 involves cleaning the targets used for seed film formation. The holder that holds the multiple targets and ion gun is rotated so that targets T2 and T4 (for example, both Cu targets) are directed away from the film deposition region FFA. After the pressure in the process chamber 50 stabilizes, power is applied to targets T2 and T4 (for example, both Cu targets) to plasmaize the Ar gas, and targets T2 and T4 (for example, both Cu targets) are cleaned at a predetermined power for a set time.

[0100] Step 66 involves the seed film formation process. The holder, which holds multiple targets and ion guns, is rotated to direct targets T2 and T4 (for example, both Cu targets) towards the film deposition region FFA. After the pressure in the process chamber 50 stabilizes, a preset power is supplied to targets T2 and T4 (for example, both Cu targets) to plasmaize the Ar gas. Then, in order to deposit a seed film (for example, a Cu film), the carrier CR is transported toward the film deposition region FFA and passed through the film deposition region FFA a specified number of times at a preset transport speed, thereby depositing a seed film (for example, a Cu film) on the adhesion film formed on the substrate S.

[0101] In step 67, the carrier CR is removed from the holding unit 60 in the process chamber 50, and the carrier CR is discharged from the process chamber 50.

[0102] Figure 15 shows an example of the output signal of the gas introduction system 1024 when the getter process is repeated two or more times in the getter process of the first embodiment (Examples 1-1 to 1-3) and the second embodiment (Examples 1-1 to 1-3, Examples 2-1 to 2-3, Examples 3-1 to 3-3). Ar gas is supplied to the process chamber 50. In the output signal of this gas introduction system 1024, the period of the gas introduction system output signal (period of the getter process) is P, the gas supply time (time for supplying Ar gas to the process chamber 50, time for forming a film of a substance with a large getter effect against the gas or water (H2O) remaining in the process chamber 50) is P1, the time for exhausting the process chamber 50 for a predetermined time is P2, and the duty cycle is D = P1 / P. In addition, in P1, it is desirable that the Ar gas supplied to the process chamber 50 be supplied to the process chamber at the same time as the start of the first or third process shown in Figure 3, and to stop supplying it to the process chamber at the same time as the end of the first or third process. Furthermore, it is desirable to start exhausting the process chamber 50 before or simultaneously with the start of the first process shown in Figure 3. Furthermore, in P2, it is desirable to evacuate the process chamber 50 for a predetermined period of time while the supply of Ar gas to the process chamber is stopped simultaneously with the completion of the first or third step shown in Figure 3. Ar gas is supplied into the process chamber 50 at the gas inlet G1 of the film deposition apparatus shown in Figures 1 and 9, and exhaust from the process chamber 50 is performed at the exhaust section V50 of the film deposition apparatus shown in Figures 1 and 9.

[0103] Figure 16 shows an example of the output signal of power supply (SP) 1022 or 1023 and power supply (IG) 1023 when the getter process is repeated two or more times in the getter process of the first embodiment (Examples 1-1 to 1-3) and the second embodiment (Examples 1-1 to 1-3, Examples 2-1 to 2-3, Examples 3-1 to 3-3). In this case, Ar gas is supplied to the process chamber 50. In the output signal of this power supply (SP) 1022 or power supply (IG) 1023, the period of the power supply output signal (period of the getter process) is P, the gas supply time (time for forming a film of a substance with a large getter effect relative to the gas or water (H2O) remaining in the process chamber 50) is P1, the time for exhausting the process chamber 50 for a predetermined time is P2, and the duty cycle is D = P1 / P, and it is output in synchronization with the gas introduction system in Figure 15. In P1, the power supplied to the process chamber 50 begins to be supplied to the process chamber at the same time as the start of the first or third process shown in Figure 3, and stops being supplied to the process chamber at the same time as the end of the first or third process. Furthermore, it is desirable to start exhausting the process chamber 50 before or simultaneously with the start of the first process shown in Figure 3. Furthermore, in P2, it is desirable to evacuate the process chamber 50 for a predetermined period of time while the supply of Ar gas to the process chamber is stopped simultaneously with the completion of the first or third step shown in Figure 3. Power is output into the process chamber 50 by the output signals of power supply (SP) 1022 or power supply (IG) 1023 shown in Figures 2 and 10, and exhaust from the process chamber 50 is performed by the exhaust section V50 of the film deposition apparatus shown in Figures 1 and 9.

[0104] Figure 17 shows the relationship between the time of the getter step and the partial pressure of water (H2O) in the process chamber after the getter step for the film formation methods of Example 1-2 of the first embodiment and Examples 1-2, 2-2, and 3-2 of the second embodiment. The inventors discovered that, considering the adhesion between the substrate and the adhesive film without reducing productivity, it is desirable for the partial pressure of water (H2O) to be 0.3 or less. As shown in Figure 17, when the getter process time was 300 seconds, repeating the getter process two or more times with a duty cycle of 50 percent resulted in a partial pressure of water (H2O) of 0.3. In contrast, as shown in Figure 17, when the getter process time was 300 seconds, repeating the getter process once with a duty cycle of 100 percent resulted in a partial pressure of water (H2O) of 0.45. Repeating the getter process two or more times with a duty cycle of 50 percent can reduce the partial pressure of water (H2O) to approximately 2 / 3 (0.3 / 0.45) compared to repeating the getter process once. On the other hand, as shown in Figure 17, when the getter process is performed once, the H2O partial pressure becomes 0.3 after a getter process time of 400 seconds. Thus, by repeating the getter process two or more times with a duty cycle of 50 percent, the getter process time can be reduced by 100 seconds (400 seconds). Therefore, by repeating the getter process two or more times with a duty cycle of 50 percent, the throughput can be reduced to approximately 3 / 4 (300 / 400) compared to the case where the getter process is performed once with a duty cycle of 100 percent. Furthermore, when the getter steps of the other film deposition methods described above (Examples 1-1 and 1-3 of Embodiment 1, and Examples 1-1, 1-3, 2-1, 2-3, 3-1, and 3-3 of Embodiment 2) are performed, a material with a large getter effect can be attached to the gas or water (H2O) remaining on the inner wall of the chamber of the process chamber 50 of the film deposition region and on the magnetic poles of the ion gun, thus obtaining a better effect than that shown in Figure 17.

[0105] Figure 18 shows the relationship between the duty cycle at a getter process time of 300 seconds and the partial pressure of water (H2O) in the process chamber after the getter process for the film deposition methods of Example 1-2 of the first embodiment and Examples 1-2, 2-2, and 3-2 of the second embodiment. As shown in Figure 18, when the duty cycle is 0 percent and vacuum evacuation is performed without the getter process, the partial pressure of water (H2O) is 0.6. As shown in Figure 18, when the getter process is performed once at a duty cycle of 100 percent, the partial pressure of water (H2O) is 0.45. In contrast, when the getter process is repeated two or more times, the partial pressure of water (H2O) in the process chamber decreases, and the H2O partial pressure becomes 0.3 or less in the duty cycle range of 34 percent to 66 percent, reducing the partial pressure of water (H2O) to about half (0.3 / 0.6) compared to the case of a duty cycle of 0 percent. Furthermore, repeating the getter process two or more times reduces the partial pressure of water (H2O) in the process chamber, with the partial pressure of water (H2O) being 0.3 or less in the duty cycle range of 34 percent to 66 percent. Compared to the case of a 100 percent duty cycle, the partial pressure of water (H2O) is reduced to approximately 2 / 3 (0.3 / 0.45). Furthermore, when the getter steps of the other film deposition methods described above (Examples 1-1 and 1-3 of Embodiment 1, and Examples 1-1, 1-3, 2-1, 2-3, 3-1, and 3-3 of Embodiment 2) are performed, a material with a large getter effect can be attached to the gas or water (H2O) remaining on the inner wall of the chamber of the process chamber 50 of the film deposition region and on the magnetic poles of the ion gun, thus obtaining a better effect than that shown in Figure 18.

[0106] Figure 19 shows the relationship between the repetitive operation and exhaust operation in the getter step and the partial pressure of water (H2O) in the process chamber for the film deposition methods of Example 1-2 of Embodiment 1 and Examples 1-2, 2-2, and 3-2 of Embodiment 2. In the case of a process in which only one Ti film is deposited while Ar gas is introduced into the process chamber (right graph in Figure 19), the partial pressure of water (H2O) is 0.45. In the case of a process in which Ti film deposition is intermittently repeated while Ar gas is introduced into the process chamber (no exhaust between Ti film depositions) (corresponding to Patent Document 2, center graph in Figure 19), the partial pressure of water (H2O) is 0.4. In contrast, in the getter process of the present invention (left graph in Figure 19), in which the getter process of depositing a Ti film and exhausting the air after depositing the Ti film is repeated two or more times as a series of operations, the partial pressure of H2O becomes 0.3 or less. Compared to the process in which only one Ti film is deposited while Ar gas is introduced into the process chamber (right graph in Figure 19), the partial pressure of water (H2O) can be reduced to about 2 / 3 (0.3 / 0.45), and compared to the process in which Ti film deposition is intermittently repeated while Ar gas is introduced into the process chamber (no exhaust between Ti film depositions) (corresponding to Patent Document 2, center graph in Figure 19), it can be reduced to about 3 / 4 (0.3 / 0.4). Thus, according to the present invention, the partial pressure of water (H2O) becomes 0.3 or less, and the adhesion between the substrate S and the adhesive film can be improved without reducing productivity.

[0107] Although preferred embodiments 1 and 2 of the present invention have been described above, the present invention is not limited to these embodiments 1 and 2, and various modifications and changes are possible within the scope of its gist.

[0108] In Embodiments 1 and 2, the getter material was described as Ti, but it is not limited to Ti. Any substance with a large getter effect on oxygen and water, such as Ta, Zr, Cr, Nb, or Mo, can be used. Furthermore, two or more alloys with large getter effects can also be used.

[0109] Furthermore, although the adhesion film in Embodiment 1 and Embodiment 2 has been described as a Ti film, it is not limited to a Ti film, and TiN, Ta, TaN, Ni, Cr, NiCr alloy, Ta alloy, Cu alloy, etc. can be used. Considering productivity, since a Cu film is formed on the adhesion film as a seed film for stable growth of electrolytic Cu plating, a Cu alloy is preferred for the adhesion film, as the adhesion film and seed film can be removed together with a Cu etching solution. Cu alloys do not have a large getter effect with respect to oxygen and water, so when a Cu alloy is used as the adhesion film, no material with a large getter effect is mounted on the cathode. However, the present invention has a getter material supply source MS, and the getter process can be carried out without being limited by the type of sputtered film.

[0110] Furthermore, although the seed film in Embodiment 1 and Embodiment 2 has been described as a Cu film, it is not limited to a Cu film, and CuAl alloys, CuW alloys, etc., can be used.

[0111] Furthermore, in Figures 15 and 16, it is preferable to control the gas inlet G1 in Figure 1 or Figure 9 and the exhaust section V50 in Figure 1 or Figure 9 so that the duty cycle D=P1 / P is within the range of 34 percent to 66 percent, and the duty cycle D=P1 / P of the third and fourth steps is smaller than the duty cycle D=P1 / P of the first and second steps. Furthermore, in Figures 15 and 16, it is preferable to control the gas inlet G1 in Figure 1 or Figure 9 and the exhaust section V50 in Figure 1 or Figure 9 such that the duty cycle D=P1 / P is within the range of 34 percent to 66 percent, and the duty cycle D=P1 / P of the fifth and sixth steps is smaller than the duty cycle D=P1 / P of the third and fourth steps. As a result, the time P1 of the third process becomes smaller than the time P1 of the first process, and the time P1 of the fifth process becomes smaller than the time P1 of the third process. Therefore, relatively, the time P2 of the fourth process becomes larger than the time P2 of the second process, and the time P2 of the sixth process becomes larger than the time P2 of the fourth process. This increases the getter effect in the early stages of the getter process when the partial pressure of water (H2O) is high, allowing the desired partial pressure of water (H2O) to be reached in a shorter time, thus improving productivity.

Claims

1. a process chamber; a processing section provided in the process chamber for forming an adhesive film; A film forming apparatus having: A film forming apparatus characterized in that the inner wall surface of the process chamber is formed of a material that has a large getter effect on gas or water (H2O) remaining in the process chamber.

2. a holder for holding a substrate in the process chamber; a driving unit that moves the holding unit that holds the substrate so that the substrate passes through a film formation region in the process chamber; a cooling unit that cools the holding unit; 2. The film forming apparatus according to claim 1, further comprising:

3. the deposition apparatus includes a platform that can be used to transfer the substrate between the deposition apparatus and another apparatus other than the deposition apparatus; a load lock chamber that can be used to transfer an unprocessed substrate provided from the platform and a substrate after film formation provided from the process chamber; 3. The film forming apparatus according to claim 1, further comprising:

4. 4. The film forming apparatus according to claim 1, wherein the processing section is configured with a rotating cathode that rotates a support that holds a plurality of targets and an ion gun.

5. a first step of depositing a film of a substance having a large getter effect on gas or water (H2O) remaining in the process chamber in the process chamber; a second step of evacuating the process chamber for a predetermined time after the first step; a third step of forming a film of a substance having a large getter effect on gas or water (H2O) remaining in the process chamber after the second step; a fourth step of evacuating the process chamber for a predetermined time after the third step; and after the fourth step, forming an adhesion film on the substrate disposed in the process chamber.

6. 6. The film forming method according to claim 5, wherein the substrate is any one of a Si substrate, a glass or resin angular member, and a resin film fixed to a support.

7. 7. The film forming method according to claim 5, wherein the gas supplied to the process chamber starts to be supplied to the process chamber simultaneously with the start of the first step or the third step, and stops to be supplied to the process chamber simultaneously with the end of the first step or the third step.

8. 8. The film forming method according to claim 5, wherein the evacuation of the process chamber starts simultaneously with the start of the first step.

9. 9. The film forming method according to claim 5, wherein the power supplied to the process chamber starts to be supplied to the process chamber simultaneously with the start of the first step or the third step, and stops to be supplied to the process chamber simultaneously with the end of the first step or the third step.

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