Substrate processing apparatus

Abstract

The present invention discloses an improved substrate processing apparatus that can symmetrically form a reaction space in which a process is carried out after a substrate is loaded. [Solution] The substrate processing apparatus includes a chamber forming a reaction space having an opening in at least one side wall, and a valve for opening and closing the opening, the valve being housed in the chamber including the side wall forming the reaction space and the chamber bottom, and including a blade for opening and closing the opening, and a drive unit for raising and lowering the blade. Therefore, in the substrate processing apparatus of the present invention, one surface of the blade is made flush with the inner surface of the chamber by closing the opening.

Description

Technical Field

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[0001] The present invention relates to a substrate processing apparatus improved so that a reaction space for advancing a semiconductor process can be symmetrically formed after a substrate is loaded in the substrate processing apparatus.

Background Art

[0002] Generally, in order to manufacture semiconductor elements, flat panel displays, etc., a thin film layer, a thin film circuit pattern, or an optical pattern is formed on a substrate such as a wafer.

[0003] For this purpose, substrate processing steps such as a deposition step of depositing a thin film of a specific substance and an etching step of selectively removing the thin film to form a pattern are required, and the substrate processing steps are performed by a substrate processing apparatus designed to be suitable for each step.

[0004] A general substrate processing apparatus can include, for example, a process chamber that processes a substrate by plasma or the like, and a transfer chamber that transfers a substrate before the process is performed or transfers a substrate after the process is performed.

[0005] [[ID=2%]]Among these, in the case of the process chamber, a slot is formed in one side wall, and the substrate is carried in or out through the slot. Generally, the opening and closing of the slot are performed by a slot valve configured outside the slot or outside the chamber.

[0006] When the substrate processing step is performed, a process environment such as a vacuum must be maintained inside the process chamber, that is, in the reaction space. And a uniform process environment must be applied to the entire reaction space. [[ID=Z9]]

[0007] Generally, the reaction space has an opening connected to the slot through which the substrate is carried in or out, and the slot is opened and closed by the external slot valve. Therefore, even when the slot is closed by the external slot valve, a free space is formed between the slot valve and the opening.

[0008] The aforementioned empty space is connected to the reaction space, and as a result, the reaction space is formed asymmetrically by the empty space. This asymmetrical reaction space makes it difficult to form a uniform process environment overall.

[0009] For example, when plasma is formed in a reaction space, the plasma is difficult to distribute uniformly within the reaction space due to the influence of empty space, making it difficult to perform etching or deposition uniformly across the entire surface of the substrate. [Overview of the project] [Problems that the invention aims to solve]

[0010] The present invention aims to solve these problems by preventing the reaction space from being connected to the slots when carrying out a semiconductor process on a substrate, thereby enabling a uniform process environment to be formed within the reaction space.

[0011] Furthermore, another objective of the present invention is to enable the semiconductor process to proceed uniformly across the entire surface of the substrate by symmetrically forming the reaction space of the substrate processing apparatus when carrying out a semiconductor process on a substrate, and by making the process environment, such as plasma, uniform within the reaction space. [Means for solving the problem]

[0012] The substrate processing apparatus of the present invention includes a chamber forming a reaction space having an opening in at least one side wall, and a valve for opening and closing the opening, wherein the valve includes a blade housed in the side wall for opening and closing the opening, a body coupled to the blade and at least a portion of which is housed in the side wall and the bottom of the reaction space, and a drive unit for raising and lowering the blade and the body, wherein one surface of the blade forms the same surface as the inner surface of the chamber by the closing operation of the opening. [Effects of the Invention]

[0013] In this invention, when carrying out a semiconductor process on a substrate, the reaction space and the slot can be blocked by a blade, and the opening of the reaction space can be covered so that it is flush with the other side wall.

[0014] Therefore, when carrying out semiconductor processes, it is possible to prevent the reaction space from being connected to unnecessary spaces, and there is an advantage in that the reaction space within the substrate processing apparatus can be formed symmetrically.

[0015] Furthermore, due to the above advantages, the present invention has the effect of creating a uniform process environment within the reaction space and allowing the process to proceed uniformly across the entire surface of the substrate. [Brief explanation of the drawing]

[0016] [Figure 1] A perspective view showing a preferred embodiment of the substrate processing apparatus of the present invention. [Figure 2] A longitudinal section of the 2-2 portion of Figure 1. [Figure 3] Cross-sectional view of section 3-3 in Figure 2. [Figure 4] A longitudinal cross-sectional view showing the chamber in section 2-2 of Figure 1. [Figure 5] Cross-sectional view of section 5-5 in Figure 4. [Figure 6] A perspective view illustrating a blade. [Figure 7] A longitudinal cross-sectional view of portion 2-2 in Figure 1, showing a modified embodiment of the substrate processing apparatus of the present invention. [Figure 8] A longitudinal cross-sectional view illustrating the operation of a valve. [Figure 9] A longitudinal cross-sectional view illustrating the operation of a valve. [Modes for carrying out the invention]

[0017] Preferred embodiments of the present invention will be described in detail below with reference to the attached drawings. Terms used herein and in the claims should not be construed as being limited to their ordinary or dictionary meanings, but rather as meanings and concepts relating to the technical matters of the present invention.

[0018] The embodiments described in this specification and the configurations illustrated in the drawings are preferred embodiments of the present invention and do not represent all of the technical ideas of the present invention. Therefore, there can be various equivalents and modifications that can replace them at the time of this application.

[0019] The substrate processing apparatus of the present invention can be understood by referring to the perspective view of FIG. 1. The substrate processing apparatus of FIG. 1 can include a chamber 100 and a valve 200.

[0020] The detailed configurations of the chamber 100 and the valve 200 will be described with reference to FIGS. 2 to 6. Here, FIG. 2 is a longitudinal sectional view of the 2-2 portion of FIG. 1, FIG. 3 is a cross-sectional view of the 3-3 portion of FIG. 2, FIG. 4 is a longitudinal sectional view showing the chamber 100 of the 2-2 portion of FIG. 1, FIG. 5 is a cross-sectional view of the 5-5 portion of FIG. 4, and FIG. 6 is a perspective view illustrating the blade 20 of the valve The detailed configurations of the chamber 100 and the valve 200 will be described with reference to FIGS. 2 to 6. Here, FIG. 2 is a longitudinal sectional view of the 2-2 portion of FIG. 1, FIG. 3 is a cross-sectional view of the 3-3 portion of FIG. 2, FIG. 4 is a longitudinal sectional view showing the chamber 100 of the 2-2 portion of FIG. 1, FIG. 5 is a cross-sectional view of the 5-5 portion of FIG. 4, and FIG. 6 is a perspective view illustrating the blade 20 of the valve 200.

[0021] First, the chamber 100 can form a reaction space 10 having an opening 16 in at least one side wall. For this purpose, it is shown as including a side wall 12 as the first wall and a chamber bottom 14 as the second wall. The side wall 12 and the chamber bottom 14 are understood to be used for forming the reaction space 10.

[0022] Although not specifically shown, a chamber lid (not shown) is formed on the upper part of the side wall 12.

[0023] Among these, the chamber bottom portion urchased substrate SS is understood to include a lower structure such as a susceptor that supports the substrate SS, but is shown in a simplified manner for convenience of explanation. And the chamber lid is understood to include a device for supplying process gas to the reaction space 10 from the upper part to the lower part, but the illustration and specific description are omitted for convenience of explanation.

[0024] The valve 200 is for opening and closing the opening 16 of the reaction space 10 and is configured to include a blade 20 and a drive unit 40. The drive unit 40 is connected to and supported by another housing (not shown) on the side wall 12 or bottom 14 of the chamber.

[0025] Of these, the blade 20 is configured such that at least a portion of it is housed in the side wall 12 and the chamber bottom 14, and the opening 16 can be opened and closed.

[0026] In one embodiment of the present invention, the blade 20 can form part of the side wall 12 when raised and lowered by the drive unit 40 to close the opening 16. At this time, one surface of the blade 20 is configured to form a flush surface with the inner surface of the chamber 100 when the opening 16 is closed.

[0027] The drive unit 40 is connected to the blade 20 via a coupling (not shown) and is configured to raise and lower the blade 20. The coupling may include, for example, an actuator (not shown). The coupling is also connected to a bellows (not shown) that can contract and expand. The bellows is connected to the lower part of the valve space 30, which will be described later, and can contract or expand in conjunction with the raising and lowering of the blade 20 by the drive unit 40. The drive unit 40 is configured to include a power source that generates and provides driving force, such as a drive motor (not shown). The drive unit 40 and the coupling can be configured in various ways by the manufacturer, so specific illustrations and descriptions are omitted.

[0028] The drive unit 40 can provide a driving force for raising or lowering the blade 20, i.e., vertical movement, or for moving the blade 20 forward or backward relative to the opening 16, i.e., forward and backward movement.

[0029] The following describes the detailed configuration of the chamber 100 and valve 200 mentioned above.

[0030] First, the chamber 100 may include a side wall 12 as a first wall forming a reaction space 10 inside, and a chamber bottom 14 at the bottom of the reaction space 10 as a second wall.

[0031] The reaction space 10 has a planar structure corresponding to the planar shape of the substrate SS placed inside, and is formed in a cylindrical shape with a predetermined height. For example, if the substrate SS is a circular wafer, the reaction space 10 is formed to have a cylindrical shape. That is, the reaction space 10 can have a circular bottom and curved sides.

[0032] As described above, the opening 16 of the reaction space 10 is configured to penetrate horizontally through the side wall 12.

[0033] The opening 16 is used as an entrance / exit for transporting the substrate SS into the reaction space 10 and for transporting the substrate SS to the outside after the semiconductor process is complete. In Figure 1, the arrow IN illustrates the direction in which the substrate SS is transported through the opening 16, and the direction in which the substrate SS is transported is opposite to the arrow IN. The opening 16 is designed to have a width and height that allows the substrate SS and a robot (not shown) that transports it to enter and exit.

[0034] The substrates SS can be loaded or unloaded one by one through the opening 16, for example, and can be placed on top of the bottom 14 of the chamber in the reaction space 10 to carry out the semiconductor process.

[0035] Spaces are formed in the side walls 12 and the bottom 14 of the chamber 100 to accommodate the upper and lower parts 22 of the blade 20. For the sake of explanation, these spaces are referred to as valve spaces 30.

[0036] The vertical structure of the valve space 30 can be understood by referring to Figure 4, and the horizontal structure can be understood by referring to Figure 5.

[0037] The valve space 30 may have a space corresponding to the shape of the blade 20 when the opening 16 is closed by the valve 200.

[0038] One side of the valve space 30 is connected to the reaction space 10 via an opening 16. A slot 18 is formed on the surface of the valve space 30 facing the opening 16. That is, the valve space 30 is understood to be formed between the slot 18 and the opening 16.

[0039] The upper part of the valve space 30 has a shape for accommodating the upper part of the blade 20.

[0040] The valve space 30 has a shape for accommodating the blade 20, which can be understood by referring to Figure 6, and may have a height that covers the opening 16 and a portion of the upper side surface of the chamber bottom 14.

[0041] The upper part of the valve space 30 is formed with a slot 18 and has a first side surface that forms a vertical plane and a second side surface that has a recessed curved surface facing the opening 16 and the upper side surface of the bottom 14. The first and second sides are positioned to face each other. A vertical channel 32 is formed on the other side of the valve space 30 between the first and second sides. The vertical channel 32 is understood as a space that gradually widens towards the bottom in order to accommodate the side ends 26 that extend on both sides of the blade 20, which will be described later.

[0042] Furthermore, a detachment prevention part is provided on one surface of the side wall 12 that forms the upper end of the valve space 30.

[0043] In other words, a slip prevention portion is formed on one surface of the side wall 12 facing the upper end 24 of the blade 20, which will be described later, and the slip prevention portion is configured to include a groove 34 connected to the lower valve space 30.

[0044] The groove 34 is for connecting with the upper end of the blade 20 when the blade 20 closes the opening 16.

[0045] As described above, when the upper end 24 of the blade 20 is coupled to the groove 34, even if high pressure is formed in the reaction space 10 for the reaction, the coupling between the upper end 24 of the blade 20 and the groove 34 prevents the blade 20 from shifting.

[0046] On the other hand, the lower part of the valve space 30 has a shape for accommodating the lower part 22 of the blade 20, as can be understood by referring to Figure 6, and is formed across the side wall 12 and the chamber bottom 14. The lower part of the valve space 30 has a height less than the thickness of the chamber bottom 14 and is formed to include a rectangular space that is a certain height from the bottom surface of the chamber bottom 14.

[0047] Preferably, the lower part of the valve space 30 is isolated from the external space of the chamber 100. For this purpose, the drive unit 40 may be equipped with a connecting part (not shown) to which the bellows (not shown) described above is connected. In this case, the bellows is configured in the lower part of the valve space 30, isolating the lower part of the valve space 30 from the external space of the chamber 100, and the drive unit 40 can contract or expand in conjunction with the raising and lowering of the blade 20.

[0048] On the other hand, the shape of the blade 20 can be understood by referring to Figure 6, the vertical structure of the blade 20 can be understood by referring to Figure 2, and the horizontal structure can be understood by referring to Figure 3.

[0049] First, the blade 20 may have two wide, vertical sides that face each other.

[0050] Of the two sides, one is formed as a rectangular plane facing the outside of the chamber 100 in a position to close the opening 16, and the other is formed as a horizontally recessed curved surface 57 facing the opening 16 of the reaction space 10 and the upper surface of the chamber bottom 14 in a position to close the opening 16.

[0051] In other words, one of the two sides may include a concave curved surface. The curved surface 57 corresponds to the curved surface of the valve space 30, and the upper part of the curved surface 57 is configured to form a flush surface with the inner surface of the chamber 100 when the opening 16 is closed, and the lower part of the curved surface 57 is configured to face the upper surface of the chamber bottom 14. The upper and lower parts of the curved surface 57 have the same curvature and are configured to extend in the same plane vertically.

[0052] To form the curved surface 57, a protrusion 28 is formed on one side of the blade 20, and the protrusion 28 can form a curved surface that is horizontally recessed toward the opening 16 and the upper side of the chamber bottom 14, and can have a horizontally protruding shape. Furthermore, the protrusion 28 can have a shape in which the thickness gradually increases from the center toward the horizontal edge, so as to form the curved surface 57 in the horizontal direction.

[0053] Then, side ends 26 are formed at both ends of the blade 20 between the two sides which form a plane and a curved surface. The side ends 26 may have a protruding portion 28 that projects from one side to form a curved surface and a stepped surface 53. An O-ring OR is configured on the surface 53 as a sealing portion for sealing. The sealing portion may be an O-ring or gasket for airtightness. However, this is merely an example and is not limited thereto. The side ends 26 are inserted into the channel 32 of the valve space 30 and are formed to have a gradually increasing width towards the bottom. Therefore, the surface 53 is formed to have an inclination.

[0054] Furthermore, an upper end 24 is formed on the upper part of the blade 20 for connecting with the groove 34 at the top of the valve space 30. The upper end 24 of the blade 20 has a shape that protrudes to a predetermined height upward for connecting with the groove 34, and is formed to have various cross-sections for connecting with the groove 34.

[0055] On one of the surfaces of the upper end 24 of the blade 20 facing the groove 34, the surface 51 connected to the inclined surface 53 of the side end 26 is configured as a sealing portion with an O-ring OR for sealing.

[0056] On the other hand, the lower part of the blade 20 is configured to be accommodated, at least in part, by the side wall 12 and the chamber bottom 14 of the reaction space 10.

[0057] The lower part of the blade 20 is formed to have a rectangular volume. That is, the lower part of the blade 20 is configured to have a flat horizontal surface 59 that intersects with the curved surface 57.

[0058] Furthermore, an O-ring OR is configured as a sealing portion for sealing on the side surface 55 connected to the horizontal surface 59 at the bottom of the blade 20.

[0059] The O-ring OR is configured to connect to the side surface 55 of the blade 20, the inclined surface 53 of the side end 26 of the blade 20 connected to the side surface 55, and one surface 51 of the upper end 24 of the blade 20 connected to the surface 53, thereby forming a sealing portion. With this configuration, the sealing portion is configured to surround the opening 16 of the reaction space 10.

[0060] In an embodiment of the substrate processing apparatus of the present invention, the valve 200 is configured to have a blade 20 having the structure described above.

[0061] Therefore, in the embodiment of the present invention, the drive unit 40 can raise and lower the blade 20 so that it closes the opening 16, or it can lower the blade 20 so that it opens the opening 16.

[0062] Therefore, before the semiconductor process is carried out on the substrate, the blade 20 closes the opening 16 of the reaction space 10, and the blade 20 blocks the reaction space 10 from the slot 18.

[0063] At this time, the opening 16 of the reaction space 10 is covered by the blade 20 so as to be flush with the other side walls.

[0064] Therefore, when proceeding with the semiconductor process, the reaction space 10 is prevented from being connected to unnecessary spaces such as slots 18, and the reaction space 10 within the substrate processing apparatus is formed symmetrically.

[0065] In the embodiment of the present invention, the reaction space 10 can be formed symmetrically to advance the semiconductor process, so that the process environment within the reaction space 10 can be formed uniformly, and the process can be carried out uniformly across the entire surface of the substrate.

[0066] Furthermore, in embodiments of the present invention, the blade 20 may have a shape that extends inward from the chamber bottom 14. That is, by coupling the blade 20 to the side wall 12 and the lower part of the chamber bottom 14, a supporting force can be ensured to prevent the blade 20 from flowing even when the reaction space 10 is under high pressure or vacuum.

[0067] Furthermore, in the embodiment of the present invention, the upper end 24 of the blade 20 can be coupled to the displacement prevention portion of the chamber 100, i.e., the groove 34. Therefore, displacement of the blade 20 that may occur when the reaction space 10 is under high pressure or vacuum can be prevented.

[0068] Furthermore, in the embodiment of the present invention, an O-ring OR is configured as a sealing portion so as to surround the opening 16 of the reaction space 10. Therefore, when the opening 16 of the reaction space 10 is closed by the blade 20, the airtight state to the reaction space 10 can be maintained by the sealing portion.

[0069] In embodiments of the present invention, a temperature control means can be included inside the blade 20. Specifically, a heater and a temperature control channel CL are formed inside the blade 20 as the temperature control means.

[0070] In embodiments of the present invention, the blade 20 is adjustable by an internal temperature control means to have a temperature equal to or within a predetermined temperature difference of the temperature of the side wall 12 or the bottom 14 of the chamber 100. Here, the temperature control means may include a temperature control channel CL for flowing a refrigerant, which is a temperature control fluid, and the refrigerant is controllable by being connected to a heat exchanger (not shown) or the like. Depending on the reaction conditions of the reaction space 10, the refrigerant can either heat or cool the blade 20.

[0071] To ensure uniform temperature across the entire blade 20 and to compensate for areas with high temperature loss, the heater and temperature control means may be configured to allow individual temperature control in at least multiple zones within the blade 20. The temperature control channel CL is configured to circulate at least within the blade 20. The temperature control channel CL can operate in conjunction with other temperature control means formed in the side wall 12 of the chamber 100 or the bottom 14 of the chamber.

[0072] On the other hand, the blade 20 of the present invention is configured to be driven in the valve space 30, as shown in Figures 7 to 9. Figure 7 is a longitudinal cross-sectional view of the 2-2 portion of Figure 1 showing a modified embodiment, and Figures 8 and 9 are longitudinal cross-sectional views for illustrating the drive of the valve. In Figures 7 to 9, the same parts as in the embodiments of Figures 1 to 6 are represented by the same reference numerals, and redundant explanations related to them are omitted.

[0073] The modified embodiment shown in Figure 7 differs from the embodiments in Figures 1 to 6 in that the blade 20 is configured to have a thickness that allows it to move back and forth relative to the opening 16 within the valve space 30.

[0074] In the embodiments shown in Figures 1 to 6, the opening 16 can be closed and opened by raising and lowering the blade 20.

[0075] However, in the embodiments shown in Figures 7 to 9, the drive unit 40 is configured to raise the blade 20, which is positioned as shown in Figure 8, as indicated by arrow A, to the position shown in Figure 9, and then to advance the blade 20 toward the opening 16 of the reaction space 10 as indicated by arrow B. By advancing toward the opening 16 as indicated by arrow B at the position shown in Figure 9, one side of the blade 20 can be joined to the opening 16 as shown in Figure 7.

[0076] In other words, in the embodiments shown in Figures 7 to 9, the blade 20 can be moved in the order of Figures 8, 9, and 7 to close the opening 16, and the blade 20 can be moved in the order of Figures 7, 9, and 8 to open the opening 16.

[0077] In the embodiments shown in Figures 7 to 9 above, the blade 20 can be advanced and the contact force that connects and makes contact with the opening 16 can be received by the drive unit 40.

[0078] Therefore, displacement and flow of the blade 20 can be more effectively prevented by the driving force of the drive unit 40, and the airtight state of the opening 16 can be firmly maintained by the driving force of the drive unit 40.

[0079] In the embodiments shown in Figures 7 to 9, the opening 16 of the reaction space 10 can be covered with the blade 20 so as to be flush with the other side walls, thereby forming the reaction space 10 within the substrate processing apparatus symmetrically.

[0080] Therefore, in the embodiments shown in Figures 7 to 9, a uniform process environment can be formed within the reaction space 10, and the process can be carried out uniformly across the entire surface of the substrate.

Claims

1. a chamber forming a reaction space having an opening in at least one side wall; a valve that opens and closes the opening, The valve is a blade housed in the chamber including the sidewall and the chamber bottom that define the reaction space, and configured to open and close the opening; a drive unit that raises and lowers the blade, The substrate processing apparatus is characterized in that one surface of the blade is formed flush with the inner surface of the chamber by closing the opening.

2. 2. The substrate processing apparatus according to claim 1, wherein a space for accommodating the blade is formed between the side wall and the chamber bottom.

3. The substrate processing apparatus according to claim 1 , wherein the blade becomes a part of the side wall by closing the opening.

4. 2. The substrate processing apparatus of claim 1, wherein a sealing portion is formed at an upper end of the blade.

5. a slip prevention portion is formed on one surface of the chamber facing the upper end of the blade; The substrate processing apparatus of claim 1 , wherein an upper end of the blade is coupled to the anti-shift portion when the blade is positioned to close the opening.

6. The substrate processing apparatus according to claim 5 , wherein the misalignment prevention portion includes a groove that accommodates an upper end of the blade.

7. 2. The substrate processing apparatus according to claim 1, wherein the blade maintains a temperature equal to or different from the temperature of the side wall or the chamber bottom.

8. 2. The substrate processing apparatus according to claim 1, wherein the blade includes a heater or temperature adjusting means therein.

9. A temperature control channel is formed in the blade, The substrate processing apparatus according to claim 1 , wherein the temperature control flow path is formed so that a temperature control fluid circulates through the blade.

10. 2. The substrate processing apparatus according to claim 1, wherein the blade opens or closes the opening by moving up and down and back and forth relative to the opening.

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