Indicating device

Abstract

To provide a novel functional panel which is superior in convenience or reliability, and to provide a method of manufacturing the novel functional panel that is superior in convenience or reliability.SOLUTION: A novel functional panel includes a first base material, a second base material having a region overlapping with the first base material, a bonding layer bonding the first base material and second base material to each other, and an insulating layer in contact with the first base material and second base material. Consequently, a gap which is apt to be formed in a region where the bonding layer is in contact with the first base material or a region where the bonding layer is in contact with the second base material can be filled with the insulating layer, and a phenomenon can be suppressed in which impurities are diffused in a functional layer in a region encircled with the first base material, the second base material, and the bonding layer bonding the first base material and second base material to each other.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] One aspect of the present invention relates to a functional panel, a method for manufacturing a functional panel, a module, or an information processing apparatus thereof.

[0002] Note that one aspect of the present invention is not limited to the above technical field. The technical field of one aspect of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Or, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition (composition of matter). Therefore, more specifically, examples of the technical field of one aspect of the present invention disclosed in this specification include semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, information processing apparatuses, driving methods thereof, or manufacturing methods thereof. One aspect of the present invention relates to a process, a machine, a manufacture, or a composition (composition of matter). Therefore, more specifically, examples of the technical field of one aspect of the present invention disclosed in this specification include semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, information processing apparatuses, driving methods thereof, or manufacturing methods thereof. information processing apparatuses, driving methods thereof, or manufacturing methods thereof. information processing apparatuses, driving methods thereof, or manufacturing methods thereof.

Background Art

[0003] There are functional elements whose functions are impaired by the diffusion of impurities. In order to maintain the functions of such functional elements, there is known an invention in which a functional element is sealed in a space surrounded by a substrate on which the functional element is provided, a sealing substrate, and a sealing material that bonds the front substrate and the sealing substrate (Patent Document 1).

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] ​​​​One aspect of the present invention is to provide a novel functional panel with excellent convenience or reliability. Or, one of the problems is to provide a method for manufacturing a novel functional panel with excellent convenience or reliability. Or, one of the problems is to provide a novel functional panel, a method for manufacturing a novel functional panel, or a novel semiconductor device.

[0006] Note that the description of these problems does not prevent the existence of other problems. One aspect of the present invention is not required to solve all of these problems. Note that other problems will become apparent from the descriptions in the specification, drawings, claims, etc., and it is possible to extract these other problems from the descriptions in the specification, drawings, claims, etc.

Means for Solving the Problems

[0007] One aspect of the present invention is a functional panel having a first base material, a second base material having a region overlapping the first base material, a bonding layer having a function of bonding the second base material to one surface of the first base material, an insulating layer in contact with the first base material, the second base material, and the bonding layer, and a functional layer in a region surrounded by the first base material, the second base material, and the bonding layer. And the functional layer includes a plurality of functional elements.

[0008]

[0009] Also, one aspect of the present invention is the above functional panel in which the functional element includes a light-emitting element.

[0010] Also, one aspect of the present invention is the above functional panel in which the functional element includes a display element.

[0011] Also, one aspect of the present invention is the above functional panel in which the functional element includes a transistor.

[0012] ​​​​​The functional panel according to one aspect of the present invention includes a first base material, a second base material having an area overlapping the first base material, a bonding layer bonding the first base material and the second base material, and an insulating layer in contact with the first base material, the second base material, and the bonding layer. Accordingly, the insulating layer can fill gaps that are likely to occur in an area where the bonding layer contacts the first base material or an area where the bonding layer contacts the second base material, and it is possible to suppress the phenomenon of impurities diffusing into the functional layer in the area surrounded by the first base material, the second base material, and the bonding layer that bonds the first base material and the second base material. As a result, a novel functional panel excellent in convenience or reliability can be provided. A second base material, a bonding layer that bonds the first base material and the second base material, and an insulating layer in contact with the first base material, the second base material, and the bonding layer are included. Thereby, gaps that are likely to occur in an area where the bonding layer contacts the first base material or an area where the bonding layer contacts the second base material are filled with the insulating layer, and the phenomenon of impurities diffusing into the functional layer in the area surrounded by the first base material, the second base material, and the bonding layer that bonds the first base material and the second base material can be suppressed. As a result, a novel functional panel excellent in convenience or reliability can be provided. Moreover, one aspect of the present invention is a method for manufacturing a functional panel having the following six steps. In the first step, a processing member having a first base material, a second base material having an area overlapping the first base material, a bonding layer having a function of bonding the second base material to one surface of the first base material, and a functional layer in the area surrounded by the first base material, the second base material, and the bonding layer, where the functional layer includes a plurality of functional elements, is prepared, and the processing member is supplied to a processing member support portion.

[0013] In the second step, the temperature of the processing member is controlled to a predetermined value, and the chamber provided inside the processing member support portion is evacuated.

[0014] In the third step, a source gas containing a precursor compound is supplied to the chamber, and after the supply, the source gas is purged from the chamber. In the fourth step, a source gas containing an oxidizing agent is supplied to the chamber, and after the supply, the source gas is purged from the chamber. In the fourth step, a source gas containing an oxidizing agent is supplied to the chamber, and after the supply, the source gas is purged from the chamber. In the fourth step, a source gas containing an oxidizing agent is supplied to the chamber, and after the supply, the source gas is purged from the chamber.

[0015] In the second step, the temperature of the processing member is controlled to a predetermined value, and the chamber provided inside the processing member support portion is evacuated. In the third step, a source gas containing a precursor compound is supplied to the chamber, and after the supply, the source gas is purged from the chamber.

[0016] In the third step, a source gas containing a precursor compound is supplied to the chamber, and after the supply, the source gas is purged from the chamber. In the fourth step, a source gas containing an oxidizing agent is supplied to the chamber, and after the supply, the source gas is purged from the chamber.

[0017] In the fourth step, a source gas containing an oxidizing agent is supplied to the chamber, and after the supply, the source gas is purged from the chamber. In the fourth step, a source gas containing an oxidizing agent is supplied to the chamber, and after the supply, the source gas is purged from the chamber.

[0018] In the fifth step, if the number of repetitions of the cycle including the third step and the fourth step is less than a predetermined number of times, return to the third step; if it is equal to or more than the predetermined number of times, proceed to the sixth step.

[0019] In the sixth step, carry the processed member out of the chamber. Here, the formation of the insulating layer is completed.

[0020] Also, one aspect of the present invention is a method for manufacturing a functional panel having the following eight steps.

[0021] In the first step, a first substrate, a second substrate having a region overlapping with the first substrate, a first bonding layer and a second bonding layer having a function of bonding the second substrate to one surface of the first substrate, a first functional layer in a region surrounded by the first substrate, the second substrate, and the first bonding layer, and a second functional layer in a region surrounded by the first substrate, the second substrate, and the second bonding layer are provided. The first functional layer and the second functional layer each prepare a processed member including a plurality of functional elements, and an opening is formed in a region of the second substrate that overlaps with a region between the first bonding layer and the second bonding layer.

[0022] In the second step, supply the processed member to a processed member support portion.

[0023] In the third step, control the temperature of the processed member to a predetermined value and evacuate a chamber provided inside the processed member support portion.

[0024] In the fourth step, supply a source gas containing a precursor compound to the chamber, and then purge the source gas from the chamber.

[0025] ​​​​​ In the fifth step, a raw material gas containing an oxidizing agent is supplied to the chamber, and after the supply, the raw material gas is purged from the chamber.

[0026] In the sixth step, if the number of repetitions of the cycle including the third step and the fourth step is less than a predetermined number of times, return to the fourth step, and if it is equal to or more than the predetermined number of times proceed to the seventh step.

[0027] In the seventh step, the processed member is carried out of the chamber. Here, the formation of the insulating layer is completed.

[0028] In the eighth step, the processed member is divided along the region overlapping the region between the first bonding layer and the second bonding layer.

[0029] The method for manufacturing a functional panel according to one aspect of the present invention includes supplying a raw material gas containing a precursor compound, purging the raw material gas from the chamber after the supply, and supplying a raw material gas containing an oxidizing agent, purging the raw material gas from the chamber after the supply, and is configured to include these steps. Thereby, an insulating layer containing an oxide of the precursor compound can be formed on the surface of the processed member. As a result, a novel method for manufacturing a functional panel can be provided.

[0030] A module having the functional panel according to any one of the above and an FPC or a touch sensor.

[0031] An information processing apparatus having the functional panel according to any one of the above or the above module and a microphone, an antenna, a battery, an operation switch, or a housing.

[0032] ​​​​​In addition, in this specification, the EL layer refers to a layer provided between a pair of electrodes of a light-emitting element. Therefore, a light-emitting layer containing an organic compound, which is a light-emitting substance sandwiched between electrodes, is one aspect of the EL layer.

[0033] In addition, in this specification, the light-emitting device refers to an image display device or a light source (including a lighting device). ). Further, a module to which a connector, for example, an FPC (Flexible print ed circuit) or a TCP (Tape Carrier Package) is attached, a module in which a printed wiring board is provided at the tip of the TCP, or a module in which an IC (integrated circuit) is directly mounted on a substrate on which a light-emitting element is formed by a COG (Chip On Glass) method may include a light-emitting device.

Advantages of the Invention

[0034] According to one aspect of the present invention, a novel functional panel excellent in convenience or reliability can be provided. Or, a method for manufacturing a novel functional panel excellent in convenience or reliability can be provided. Or a novel functional panel, a method for manufacturing a novel functional panel, or a novel semiconductor device can be provided. Note that the description of these effects does not prevent the existence of other effects. Note that one

[0035] aspect of the present invention does not necessarily have all of these effects. Note that other effects will be obvious from the description in the specification, drawings, claims, etc., and it is possible to extract these other effects from the description in the specification, drawings , claims, etc.

Brief Description of the Drawings

[0036] ​

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Figure 16

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Figure 21

Figure 22

Mode for Carrying Out the Invention

[0037] The functional panel according to one aspect of the present invention includes a first base material, a second base material having an area overlapping the first base material, a bonding layer bonding the first base material and the second base material, and an insulating layer in contact with the first base material, the second base material, and the

[0038] bonding layer. Thereby, the insulating layer can fill the gaps that are likely to occur in the region where the bonding layer contacts the first base material or the region where the bonding layer contacts the second base material, and impurities can be prevented from diffusing into the functional layer in the region surrounded by the first base material, the second base material, and the bonding layer that bonds the first base material and the second base material. As a result, a novel functional panel excellent in convenience or reliability can be provided.

[0039] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and those skilled in the art can easily understand that the form and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same reference numerals are commonly used between different drawings for the same part or parts having the same function, and the repeated description thereof will be omitted.

[0040] (Embodiment 1) In the present embodiment, the configuration of the functional panel according to one aspect of the present invention will be described with reference to FIGS. 1 to 4. while explaining.

[0041] FIG. 1 is a diagram for explaining the configuration of the functional panel according to one aspect of the present invention. FIG. 1(A) is a top view of the functional panel 200 according to one aspect of the present invention, and FIG. 1(B) is a cross-sectional view taken along the cutting lines A-B and C-D in FIG. 1(A). FIGS. 1(C) and 1(D) are cross-sectional views for explaining a configuration in which a part of the configuration shown in FIG. 1(B) can be replaced.

[0042] <Configuration Example 1 of Functional Panel.> The functional panel 200 described in the present embodiment includes a first base material 210, a second base material 270 having an overlapping region with the first base material 210, and a bonding layer 205 having a function of bonding the second base material 27 0 to one surface of the first base material 210, an insulating layer 290 in contact with the first base material 210, the second base material 270, and the bonding layer 205, and a functional layer in a region surrounded by the first base material 210, the second base material 270, and the bonding layer 205 (see FIG. 1(A)). And the functional layer includes a plurality of functional elements.

[0043] And the functional layer includes a plurality of functional elements.

[0044] The functional panel 200 described in the present embodiment includes a first base material 210, a second base material 270, and a bonding layer 205 for bonding the first base material 210 and the second base material 270, and an insulating layer 290 in contact with the first base material 21 0, the second base material 270, and the bonding layer 205. Further, a material having flexibility can be used for the first base material 210 and the second base material 270. can.

[0045] Thereby, in the region where the bonding layer is in contact with the first base material or the region where the bonding layer is in contact with the second base material The easily generated gaps can be filled with an insulating layer, and impurities can be prevented from diffusing into the functional layer in the region surrounded by the first substrate, the second substrate, and the bonding layer that bonds the first substrate and the second substrate. Further, when a flexible material is used for the first substrate 210 and the second substrate 270, it can be bent or folded. As a result, a novel functional panel excellent in convenience or reliability can be provided. In addition, the light-emitting element 250R can be used as the functional element. Further, the functional panel 200 including the light-emitting element 250R can be referred to as a light-emitting module.

[0046] In addition, a display element can be used as the functional element. Further, the functional panel 2 00 including the display element can be referred to as a display module.

[0047] In addition, the drive transistor M0 can be used as the functional element.

[0048] In addition, the functional panel 200 according to one aspect of the present invention has a pixel 202, a drive circuit GD that supplies a control signal to the pixel 202, a drive circuit SD that supplies a display signal to the pixel 202, and a region 201 in which the pixel 202 is disposed (see FIGS. 1(A) and 1(B)).

[0049] The pixel 202 is supplied with a display signal (see FIG. 1(A)). The pixel 202 includes sub-pixels 202 R, etc. The sub-pixel 202R has a function of displaying red. Further, for example, it includes a sub-pixel that displays green and a sub-pixel that displays blue.

[0050] The sub-pixel 202R includes a pixel circuit and a display module 280R (see FIG. 1(B)).

[0051] ​​​​​​​

[0052] The pixel circuit includes a drive transistor M0 and a capacitance element C.

[0053] The display module 280R includes a light emitting element 250R and a light emitting element 250R emitting light from the side where the light emitting element 250R emits light. The colored layer 267R has an area overlapping with the light element 250R. It can be said that the above is one aspect of a display element.

[0054] The light emitting element 250R includes a lower electrode, an upper electrode, and a layer containing a light emitting organic compound.

[0055] The circuit includes a driving transistor M0 and is disposed between the first substrate 210 and the light-emitting element 250R. The circuit is disposed with the insulating film 221 sandwiched between the light emitting element 250R.

[0056] The driving transistor M0 has a second electrode. The second electrode is provided on the insulating film 221. It is electrically connected to the lower electrode of the light emitting element 250R through the opening.

[0057] The capacitance element C has a first electrode and a second electrode. The first electrode is connected to the driving transistor M0 and a second electrode electrically connected to the second electrode of the driving transistor M0. are connected to the network.

[0058] The drive circuit SD includes a transistor MD and a capacitor CD.

[0059] The functional panel 200 according to the embodiment of the present invention includes wiring 211 electrically connected to the driving circuit SD. A terminal 219 electrically connected to the wiring 211 and a frame electrically connected to the terminal 219 and a flexible printed circuit board 209.

[0060] In addition, a light blocking layer 267BM having an opening in a region overlapping with the subpixel 202R is provided.

[0061] In addition, a partition wall 228 is provided with an opening in a region overlapping with the light emitting element 250R and covers an end of the lower electrode. Equipped with.

[0062] In addition, it has a functional film 267p having an area overlapping with the area 201 (see FIG. 1(B)).

[0063] The functional panel 200 displays information on the side where the second base material 270 is provided. This can be done.

[0064] The individual elements constituting the functional panel 200 according to one embodiment of the present invention will be described below. These configurations cannot be clearly separated, and one configuration may also be used for other configurations. Some may be included.

[0065] Overall Composition The functional panel 200 includes a first base material 210, a second base material 270, a bonding layer 205, an insulating layer 29, and a bonding layer 206. 0 or has a functional layer.

[0066] The functional panel 200 includes a pixel 202, a driving circuit GD, a driving circuit SD, and a region 201. Pixel 202R, driving transistor M0, capacitance element C, display module 280R, light-emitting element 250R, colored layer 267R, pixel circuit, insulating film 221, wiring 211, terminal 219, flex A sable printed circuit board 209, a light-shielding layer 267BM, a partition wall 228 or a functional film 267p do.

[0067] <<First substrate 210>> The first base material 210 has a heat resistance sufficient to withstand the manufacturing process and a thickness that is applicable to the manufacturing equipment. There is no particular limitation as long as it has the required length and size.

[0068] An organic material, an inorganic material, or a composite material such as a composite of an organic material and an inorganic material can be used for the first base material 210. For example, an inorganic material such as glass, ceramics, or metal can be used for the first base material 210. It can be used.

[0069] Specifically, non-alkali glass, soda-lime glass, potassium glass, or crystal glass or the like can be used for the first base material 210. Specifically, an inorganic oxide film, an inorganic nitride film, or an inorganic oxynitride film or the like can be used for the first base material 210. For example, silicon oxide nitride, silicon nitride, silicon oxynitride, alumina film, or the like can be used for the first base material 210. SUS or aluminum or the like can be used for the first base material 210.

[0070] For example, an organic material such as a resin, a resin film, or plastic can be used for the first base material 210. Specifically, a resin film or a resin plate such as polyester, polyolefin, polyamide, polyimide carbonate, or acrylic resin can be used for the first base material 2 10.

[0071] For example, a composite material in which a metal plate, a thin glass plate, or a film of an inorganic material or the like is bonded to a resin film or the like can be used for the first base material 210. For example, a composite material in which fibrous or particulate metal, glass, or inorganic material or the like is dispersed in a resin film can be used for the first base material 210. For example, a composite material in which fibrous or particulate resin or organic material or the like is dispersed in an inorganic material can be used for the first base material 210. For example, a composite material in which fibrous or particulate resin or organic material or the like is dispersed in an inorganic material can be used for the first base material 210. It can be used.

[0072] In addition, a single-layer material or a material in which a plurality of layers are laminated can be used for the first base material 210. For example, a material that is laminated with a base material and an insulating film that prevents the diffusion of impurities contained in the base material can be used. , can be used for the first substrate 210. Specifically, glass and impurities contained in glass can be used. A silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, or the like that prevents diffusion of substances A material having one or more films laminated thereon can be applied to the first substrate 210. Alternatively, a resin Silicon oxide, silicon nitride or silicon oxynitride film is used to prevent the diffusion of impurities through the resin. A material having a laminated layer such as a silicon film can be applied to the first substrate 210 .

[0073] Moreover, a flexible material can be used for the first base material 210. For example, Use a material that is flexible enough to be able to be folded or folded. Specifically, the thickness is 5 mm or more, preferably 4 mm or more, and more preferably 3 mm or more. It is particularly preferable to use a material that can be bent with a curvature radius of 1 mm or more. The thickness is 2.5 μm or more and 3 mm or less, preferably 5 μm or more and 1.5 mm or less, and more preferably 10 A material having a thickness of not less than 500 μm can be used for the first base material 210 (see FIG. 2).

[0074] Specifically, the substrate 210b has flexibility, the barrier film 210a prevents the diffusion of impurities, and The laminate in which the base material 210b and the resin layer 210c for bonding the barrier film 210a are laminated is The substrate 210 can be used in any one of the following ways:

[0075] Second substrate 270 A material that can be used for the first base material 210 and has light-transmitting properties in an area overlapping with the display element is used. , can be used for the second base material 270. In addition, a material having flexibility can be used for the second base material 270. It can be used for 0. Specifically, a flexible substrate 270b, a barrier film 270a that prevents the diffusion of impurities, and a resin layer 270c that bonds the substrate 270b and the barrier film 270a are laminated, and the laminate can be used as the second substrate 270. A material that can bond the first substrate 210 and the second substrate 270 can be used for the bonding layer 205. It can be used for the second substrate 270.

[0076] 《Bonding layer 205》 A material that can bond the first substrate 210 and the second substrate 270 can be used for the bonding layer 205. It can be used for the bonding layer 205.

[0077] An inorganic material, an organic material, a composite material of an inorganic material and an organic material, etc. can be used for the bonding layer 205. It can be used.

[0078] For example, a glass layer or an adhesive having a melting point of 400 °C or lower, preferably 300 °C or lower can be used. It can be used.

[0079] For example, an organic material such as a photocurable adhesive, a reaction-curable adhesive, a thermosetting adhesive, and / or an anaerobic adhesive can be used for the bonding layer 205. It can be used for the bonding layer 205.

[0080] Specifically, an adhesive containing an epoxy resin, an acrylic resin, a silicone resin, a phenolic resin, a polyimide resin, an imide resin, a PVC (polyvinyl chloride) resin, a PVB (polyvinyl butyral) resin, an EVA (ethylene vinyl acetate) resin, etc. can be used.

[0081] It can be used.

[0081] 《Insulating layer 290》 A material having electrical insulation properties or a material having a function of suppressing the diffusion of impurities can be used for the insulating layer 290. For example, an oxide, a nitride, a fluoride, a sulfide, a ternary compound, a metal, or a polymer can be used for the insulating layer 290. It can be used for the insulating layer 290. A metal or a polymer can be used for the insulating layer 290.

[0082] For example, materials containing aluminum oxide, hafnium oxide, hafnium silicate, lanthanum oxide, silicon oxide, strontium titanate, tantalum oxide, titanium oxide, zinc oxide, niobium oxide, zirconium oxide, tin oxide, yttrium oxide, cerium oxide, scandium oxide, erbium oxide, vanadium oxide, indium oxide, etc. can be used. .

[0083] For example, materials containing aluminum nitride, hafnium nitride, silicon nitride, tantalum nitride, titanium nitride, niobium nitride, molybdenum nitride, zirconium nitride, gallium nitride, etc. can be used.

[0084] For example, materials containing copper, platinum, ruthenium, tungsten, iridium, palladium, iron, cobalt, or nickel, etc. can be used.

[0085] For example, materials containing zinc sulfide, strontium sulfide, calcium sulfide, lead sulfide, calcium fluoride, strontium fluoride, zinc fluoride, etc. can be used.

[0086] For example, materials containing nitrides containing titanium and aluminum, oxides containing titanium and aluminum, oxides containing aluminum and zinc, sulfides containing manganese and zinc, sulfides containing cerium and strontium, oxides containing erbium and aluminum, oxides containing yttrium and zirconium, etc. can be used.

[0087] For example, materials that can be formed using the atomic layer deposition (ALD) method can be used for the insulating layer 290. Dense, crack-free An insulating layer 290 with defects such as hooks and pinholes reduced or having a uniform thickness can be formed using atomic layer deposition. Further, the damage imparted to the processing part when forming the insulating layer 290 can be reduced.

[0088] 《Functional layer》 A layer including a functional circuit, a functional element, an optical element, a functional film, etc. or a plurality selected from these can be used as the functional layer.

[0089] For example, an electrical element or a biochip, etc. can be used as the functional layer. Specifically, a transistor, a capacitive element, a resistive element, a memory element, a light-emitting element, or a display element, etc. can be used.

[0090] For example, a display element and a pixel circuit for driving the display element can be used as the functional layer.

[0091] For example, a touch sensor, a color filter, or a moisture-proof film, etc. can be used as the functional layer.

[0092] 《Region 201》 Region 201 includes a plurality of functional elements. For example, it includes functional elements arranged in a matrix. Specifically, it includes a plurality of pixels 202 arranged in a matrix. Thereby the functional panel 200 can display image information in region 201.

[0093] 《Pixel 202》 A plurality of sub-pixels can be used for pixel 202. For example, a sub-pixel 202R for displaying red, a sub-pixel for displaying green, and a sub-pixel for displaying blue can be used. Also a sub-pixel for displaying yellow, a sub-pixel for displaying white, a sub-pixel for displaying cyan, a sub-pixel for displaying magenta, etc. can be used.

[0094] Sub-pixel A display element and a pixel circuit for driving the display element can be used for the sub-pixel.

[0095] Also, the insulating film 221 can be used between the functional layer including the display element and the functional layer including the pixel circuit. is possible.

[0096] For example, an inorganic material, an organic material, or a composite material of an inorganic material and an organic material can be used for the insulating film 221. Specifically, a film containing silicon and nitrogen, a film containing silicon and oxygen, a film containing polyimide, a film containing an acrylic resin, a film containing a silicone resin, or a film formed by laminating a plurality of films selected from these films can be used for the insulating film 221.

[0097] Note that the functional panel 200 includes a light-shielding layer 267BM having an opening in a region overlapping with the sub-pixel 202R. The light-shielding layer 267BM has light-shielding properties.

[0098] For example, in addition to a resin in which a pigment is dispersed and a resin containing a dye, an inorganic film such as a black chromium film can be used for the light-shielding layer 267BM. Specifically, carbon black, an inorganic oxide, a composite oxide containing a solid solution of a plurality of inorganic oxides, etc. can be used for the light-shielding layer 267BM.

[0099] Note that a partition wall 228 having an opening in a region overlapping with the display element can be used for the functional panel 200. For example, a region overlapping with the opening of the partition wall 228 in a conductive film in which the partition walls 228 are provided in layers can be used as the lower electrode of the light-emitting element 250R. Thereby, it is possible to prevent a step from occurring at the end of the lower electrode.

[0100] Display Element For example, a display medium whose contrast, luminance, reflectance, transmittance, etc. change due to an electrical or magnetic action can be used as a display element.

[0101] Note that a display module 280R including a light-emitting element 250R and a coloring layer 267R that transmits at least a part of the light emitted from the light-emitting element 250R can be used as a display element.

[0102] For example, a layer containing a material such as a pigment or a dye can be used as the coloring layer 267R. By this, the color of the light emitted from the display module 280R can be made a specific color.

[0103] Also, a microresonator structure in which a light-emitting element 250R is disposed between a reflective film and a semi-transmissive / semi-reflective film can be used. Specifically, a light-emitting element 250R having a reflective conductive film on one electrode and a semi-transmissive / semi-reflective conductive film on the other electrode can be used.

[0104] For example, a microresonator that efficiently extracts red light and a coloring layer that transmits red light can be used for a display module 280R that displays red, a microresonator that efficiently extracts green light and a coloring layer that transmits green light can be used for a display module that displays green, or a microresonator that efficiently extracts blue light and a coloring layer that transmits blue light can be used for a display module that displays blue.

[0105] Note that, and a microresonator that efficiently extracts yellow light and a coloring layer that transmits yellow light may be used together with a display module.

[0106] Specifically, an EL (electroluminescence) element (an EL element including organic and inorganic substances) ​​​​​​​​​​, organic EL elements, inorganic EL elements), LEDs (white LEDs, red LEDs, green LEDs, blue LEDs, etc.), transistors (transistors that emit light according to current), electron-emitting elements, liquid crystal elements, electronic ink, electrophoretic elements, grating light valves (GLVs), plasma displays (PDPs), MEMS (micro-electro-mechanical systems) display elements, digital micromirror devices (DMDs), DMS (digital micro shutter), MIRASOL (registered trademark), IMOD (interference modulation) elements, shutter-type MEMS display elements, optical interference-type MEMS display elements, electro-wetting elements, piezoelectric ceramic displays, display elements using carbon nanotubes, etc. can be used.

[0107] 《Pixel Circuit》 Various pixel circuits suitable for display elements can be used.

[0108] For example, a pixel circuit including a driving transistor M0 or a capacitive element C can be used .

[0109] Various transistors can be used for the driving transistor M0.

[0110] For example, a transistor using an element of Group 14, a compound semiconductor, or an oxide semiconductor in the semiconductor layer can be applied. Specifically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, or a transistor using an oxide semiconductor containing indium, etc. can be applied to the semiconductor layer of the driving transistor M0.

[0111] For example, single-crystal silicon, polysilicon, or amorphous silicon, etc. can be used as the driving transistor It can be applied to the semiconductor layer of the M0 stage.

[0112] For example, it can be applied to a bottom-gate transistor, a top-gate transistor, etc. 。

[0113] 《Drive Circuit》 Various sequential circuits such as shift registers can be used in the drive circuit GD or the drive circuit SD. It can be done.

[0114] Also, various transistors can be used for the transistor MD of the drive circuit SD. 。For example, a configuration that can be formed in the same process as the drive transistor M0 can be used for the transistor stage MD.

[0115] Also, the same configuration as the capacitor element C can be used for the capacitor element CD.

[0116] 《Wiring, Terminals》 A material having conductivity can be used for the wiring 211 or the terminal 219.

[0117] For example, an inorganic conductive material, an organic conductive material, a metal, or a conductive ceramic can be used for the wiring 2 11 or the terminal 219.

[0118] Specifically, a metal element selected from aluminum, gold, platinum, silver, chromium, tantalum, titanium, molybdenum, ta ngsten, nickel, iron, cobalt, palladium, or manganese 、an alloy containing the above-mentioned metal element or an alloy combining the above-mentioned metal elements can be used for the wiring 2 11 or the terminal 219.

[0119] Indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, gallium added The conductive oxide such as added zinc oxide can be used for the wiring 211 or the terminal 219. .

[0120] Graphene or graphite can be used for the conductive film. The film containing graphene can be formed, for example, by reducing a film containing graphene oxide formed in a film shape. Reduction methods include a method of applying heat and a method of using a reducing agent.

[0121] A conductive polymer can be used.

[0122] Note that the terminal 219 can be electrically connected to the flexible printed circuit board 209. For example, it can be electrically connected using an anisotropic conductive film.

[0123] 《Others》 The functional panel 200 has a functional film 267p.

[0124] For example, a film containing an inorganic material, an organic material, or a composite material of an inorganic material and an organic material can be used for the functional film 267p. Specifically, a ceramic coating layer containing alumina or silicon oxide, a hard coating layer such as a UV curable resin, an antireflection film, a circular polarizing plate, etc. can be used for the functional film 2 67p.

[0125] 《Transistor》 Various transistors can be used for the driving transistor M0 or the transistor MD. can.

[0126] For example, a bottom gate type transistor can be used for the driving transistor M0 or the transistor MD. can be used.

[0127] For example, a semiconductor layer containing an oxide semiconductor, amorphous silicon, etc. is used for the driving transistor M 0 and can be applied to the transistor MD.

[0128] For example, at least indium (In), zinc (Zn), and M (a metal such as Al, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf) is preferably represented by an In-M-Zn oxide. Or, it is preferable to contain both In and Zn. Preferably, it contains a film.

[0129] Examples of the stabilizer include gallium (Ga), tin (Sn), hafnium (Hf), aluminum (Al), or zirconium (Zr). Further, other stabilizers include lanthanoids such as lanthanum (La), cerium (Ce), praseodymium (P r), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium ( Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc. .

[0130] Examples of the oxide semiconductor constituting the oxide semiconductor film include In-Ga-Zn-based oxides, I n-Al-Zn-based oxides, In-Sn-Zn-based oxides, In-Hf-Zn-based oxides, In -La-Zn-based oxides, In-Ce-Zn-based oxides, In-Pr-Zn-based oxides, In- Nd-Zn-based oxides, In-Sm-Zn-based oxides, In-Eu-Zn-based oxides, In-G d-Zn-based oxides, In-Tb-Zn-based oxides, In-Dy-Zn-based oxides, In-Ho -Zn-based oxides, In-Er-Zn-based oxides, In-Tm-Zn-based oxides, In-Yb- Zn-based oxides, In-Lu-Zn-based oxides, In-Sn-Ga-Zn-based oxides, In-H f-Ga-Zn based oxide, In-Al-Ga-Zn based oxide, In-Sn-Al-Zn based oxide, In-Sn-Hf-Zn based oxide, In-Hf-Al-Zn based oxide, In-G a based oxide can be used.

[0131] Here, the In-Ga-Zn based oxide means an oxide having In, Ga, and Zn as main components, and the ratio of In, Ga, and Zn is not limited. Also, metal elements other than In, Ga, and Zn may be contained.

[0132] For example, a semiconductor layer containing polycrystalline silicon crystallized by a process such as laser annealing can be applied to driving transistors M0 and MD (see Fig. 1(C)).

[0133] For example, a top-gate type transistor can be applied to driving transistors M0 and MD (see Fig. 1(D)).

[0134] For example, a semiconductor layer containing a single crystal silicon film or the like transposed from a semiconductor layer containing polycrystalline silicon or a single crystal silicon substrate, etc. can be applied to driving transistors M0 and MD.

[0135] Another configuration of the functional panel according to one aspect of the present invention will be described with reference to Figs. 17 to 22.

[0136] Figs. 17 to 22 are diagrams for explaining the configuration of the functional panel according to one aspect of the present invention. Figs. 17(A ) to 22(A) are top views of the functional panel according to one aspect of the present invention, and Figs. 17(B) to 22(B) are cross-sectional views taken along cutting lines A-B and cutting It is a cross-sectional view of the line C-D. FIGS. 17(C) to 22(C) and FIGS. 17(D) to FIGS. 22(D) are cross-sectional views for explaining a configuration that can replace a part of the configuration shown in the corresponding FIGS. 17(B) to 22(B).

[0137] The functional panel 200(1) has an insulating layer 291, and is different from the functional panel 200 in that a light-emitting element 250R is provided between the insulating layer 291 and the first base material 210 (see FIGS. 17(B) and FIGS. 18(B)).

[0138] The material that can be used for the insulating layer 290 can be used for the insulating layer 291. Further, the insulating layer 291 can be formed using the same method as the insulating layer 290.

[0139] The functional panel 200(2) has an insulating layer 291, and is different from the functional panel 200 in that a driving transistor M0 is provided between the insulating layer 291 and the first base material 210 (see FIGS. 19 and FIGS. 20).

[0140] The material that can be used for the insulating layer 290 can be used for the insulating layer 291. Further, the insulating layer 291 can be formed using the same method as the insulating layer 290.

[0141] The functional panel 200(3) is different from the functional panel 200 in that a functional film 267p is provided between the insulating layer 290 and the second base material 270 (see FIGS. 21 and 22).

[0142] <Configuration Example 2 of the Functional Panel.> Another configuration of the functional panel according to an aspect of the present invention will be described with reference to FIG. 3.

[0143] FIG. 3 is a diagram for explaining the configuration of the functional panel according to an aspect of the present invention. FIG. 3(A) is one ​​​​​​3(B) is a top view of the functional panel 200B of the embodiment, and FIG. 3(B) is a top view of the functional panel 200B of the embodiment, taken along the cutting lines AB and AB in FIG. 3(C) and 3(D) are cross-sectional views taken along the cutting line CD shown in FIG. FIG. 13 is a cross-sectional view illustrating a configuration that can replace a portion of the configuration.

[0144] The functional panel 200B described in this embodiment has an opening in a region overlapping with the subpixel 202R. The light-shielding layer 267BM and the colored layer 267R are provided between the first base material 210 and the light-emitting element 250R. The functional film 267p is disposed on the first base material 210 side. The display module 280R emits light to the side where the first base material 210 is provided. 1. This differs from the functional panel 200 which will be described with reference to FIG.

[0145] The first base material 210 is provided with light-transmitting properties in the area overlapping the display element, and the second base material 270 is necessarily The light-transmitting property is not required, and other similar structures can be used.

[0146] As a result, the functional panel 200B displays information on the side where the first base material 210 is provided. It can be shown.

[0147] In addition, a flexible material can be used for the first base material 210 and the second base material 270. For example, the flexibility of the material may be such that it can be bent or folded. Specifically, a material having a flexible base material 210b and a material having a low impurity concentration can be used. A barrier film 210a that prevents diffusion and a resin that bonds the substrate 210b and the barrier film 210a A laminate in which the layer 210c is laminated can be used as the first base material 210. The substrate 270b has a barrier film 270a for preventing the diffusion of impurities, and the substrate 270b and the barrier film 270b are The laminate in which the resin layer 270c to which the rear film 270a is bonded is laminated is placed on the second base material 270. It can be used for the following purposes (see Figure 4).

[0148] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification. .

[0149] (Embodiment 2) In this embodiment, a manufacturing method of a functional panel according to one embodiment of the present invention will be described with reference to FIGS. I will explain with reference to the above.

[0150] FIG. 5 is a flow diagram illustrating a method for manufacturing a functional panel according to one embodiment of the present invention, and FIG. FIG. 6(A-1) is a schematic diagram illustrating the configuration of a processed member according to one embodiment of the present invention. FIG. 6(B-1) is a schematic top view of a processed member according to an embodiment of the present invention and a method for manufacturing a processed member using the processed member. 6(A-2) and 6(B-2) are schematic top views of the functional panel. 2 is a schematic cross-sectional view taken along line W1-W2 in the diagram shown in FIG.

[0151] <Example 1 of how to make a functional panel> The method for producing a functional panel described in this embodiment has the following six steps (FIG. 5 reference).

[0152] First Step In the first step, the workpiece 10 is prepared and then processed by a processing method not shown in the figure. The processed member support section supports the processed member 10 at a temperature of 100. It has the function of controlling the degree.

[0153] The processed member 10 includes a first base material 310 and a second base material 311 having an area overlapping the first base material 310. The second base material 370 is provided with a function of bonding the second base material 370 to one surface of the first base material 310. a bonding layer 305, a first substrate 310, a second substrate 370, and a functional layer 330 surrounded by the bonding layer 305 in the region. And the functional layer 330 includes a plurality of functional elements (see FIGS. 6(A-1) and 6(A-2)).

[0154] 《Second Step》 In the second step, for example, using a processing member support, the temperature of the processing member 10 is controlled to a predetermined value to exhaust a chamber (not shown) that includes the processing member 10 and the processing member support (see FIG. 5(S2)). Note that the chamber has a space that can be sealed and has.

[0155] 《Third Step》 In the third step, a source gas containing a precursor compound is supplied to the chamber, and after the supply the source gas is purged from the chamber (see FIG. 5(S3)). For example, metal alkoxide or an organometallic compound or the like can be used as the precursor compound. Note that a method of exhausting the chamber or a method of exhausting while introducing an inert gas or the like can be used as a method of purging the source gas and has.

[0156] 《Fourth Step》 In the fourth step, a source gas containing an oxidizing agent is supplied to the chamber, and after the supply the source gas is purged from the chamber (see FIG. 5(S4)). For example, water vapor, ozone, etc. can be used as the oxidizing agent. Note that when this step is completed, an insulating layer containing an oxide of the precursor compound is formed on the surface of the processing member 10. According to this method, a dense film can be formed on a surface having a complicated shape and as a result, an insulating layer with few defects such as pinholes can be formed and has. ​​

[0157] "The Fifth Step" In the fifth step, if the number of repetitions of the cycle including the third step and the fourth step is less than a predetermined number of times, return to the third step; if it is equal to or more than the predetermined number of times, proceed to the sixth step (see Fig. 5 (S5)). Note that the unit of repetition includes one cycle, and one cycle includes the third step and the fourth step. (See Fig. 5 (S5)). Note that the unit of repetition includes one cycle, and one cycle includes the third step and the fourth step. In addition, a method of alternately supplying two or more precursor compounds can be used in the third step.

[0158] For example, a first third step of supplying a source gas containing a first precursor compound and a second third step of supplying a source gas containing a second precursor compound can be used. In this case, one cycle includes the first third step, the second third step, and the fourth step. (See Fig. 5 (S5)). Note that the unit of repetition includes one cycle, and one cycle includes the third step and the fourth step. In addition, a method of alternately supplying two or more precursor compounds can be used in the third step. For example, a first third step of supplying a source gas containing a first precursor compound and a second third step of supplying a source gas containing a second precursor compound can be used.

[0159] "The Sixth Step" In the sixth step, the processing member 10 is carried out of the chamber. Here, the formation of the insulating layer 390 is completed (see Fig. 5 (S6), Fig. 6 (B-1), and Fig. 6 (B-2)). Note that when this step is completed, a functional panel 300 having an insulating layer 390 containing an oxide of the precursor compound formed on the surface with a predetermined thickness can be provided. Note that when this step is completed, a functional panel 300 having an insulating layer 390 containing an oxide of the precursor compound formed on the surface with a predetermined thickness can be provided. Note that when this step is completed, a functional panel 300 having an insulating layer 390 containing an oxide of the precursor compound formed on the surface with a predetermined thickness can be provided.

[0160] The method for manufacturing the functional panel described in this embodiment includes a step of supplying a source gas containing a precursor compound and purging the source gas from the chamber after the supply, and a step of supplying a source gas containing an oxidizing agent and purging the source gas from the chamber after the supply. By this, an insulating layer containing an oxide of the precursor compound is formed on the surface of the processing member. The method for manufacturing the functional panel described in this embodiment includes a step of supplying a source gas containing a precursor compound and purging the source gas from the chamber after the supply, and a step of supplying a source gas containing an oxidizing agent and purging the source gas from the chamber after the supply. By this, an insulating layer containing an oxide of the precursor compound is formed on the surface of the processing member. As a result, a novel method for producing a functional panel can be provided.

[0161] The manufacturing method of the functional panel described in this embodiment mode may be the same as that described in the third embodiment mode, for example. The above-mentioned method can be carried out by using a film formation system according to one embodiment of the present invention.

[0162] Specifically, in the film forming apparatus 100, a functional layer is formed on the first substrate 310, and the sealing chamber SU In the above, the first base material 310 and the second base material 370 are bonded together using the bonding layer 305. The first base material 310 can be produced by the above steps.

[0163] Then, an insulating layer 390 can be formed using an atomic layer deposition (ALD) system.

[0164] In addition, a lift-off method or the like is used to provide a region in which the insulating layer 390 is not formed on a part of the processed member 10. The method can be used in the present invention.

[0165] For example, a resist mask that can be peeled off in a later process is formed on the area where the insulating layer 390 is not formed. A workpiece formed in the above-mentioned region is used as the workpiece 10.

[0166] After performing the above steps 1 to 6, the resist mask is stripped off. As a result, the insulating layer 390 formed on the resist mask is heated together with the resist mask. It can be separated from the construction member 10.

[0167] Specifically, photosensitive resist, soluble resin, adhesive tape, etc. are used as a resist mask. There can be.

[0168] <Example 2 of how to make a functional panel> For another configuration of the method for producing a functional panel according to an embodiment of the present invention, please refer to FIG. 7 and FIG. 8. I will explain.

[0169] FIG. 7 is a flow diagram illustrating a method for manufacturing a functional panel according to one embodiment of the present invention, and FIG. 8(A-1) to 8(D-1) are schematic diagrams for explaining the configuration of the processed member of the present invention. 8(A-2) to 8(D-2) are schematic top views of a processed member according to one embodiment of the present invention. 1 is a schematic cross-sectional view taken along line W1-W2 of the diagram shown on the left.

[0170] Another configuration of the method for manufacturing a functional panel described in this embodiment has the following eight steps: (See FIG. 7.) For example, in the film forming system according to one aspect of the present invention described in the third embodiment, This can be implemented using the system.

[0171] The method for producing a functional panel, which will be described with reference to FIG. 5, has the following three features: different.

[0172] The first difference is that a processed member 10B is used. The processed member 10B has a first bonding layer 3 05a, second bonding layer 305b, first substrate 310, second substrate 370 and first A first functional layer 330a, a first base material 310, and a second base material 311 are formed in a region surrounded by the bonding layer 305a. The second functional layer 330b is disposed in an area surrounded by the material 370 and the second bonding layer 305b. (Figures 8(A-1) and 8(A-2)).

[0173] The second difference is that the first bonding layer 305a and the second bonding layer 305b of the second base material 370 are a) and b) (FIG. 7(T1 ), see Figures 8(B-1) and 8(B-2).

[0174] The third difference is that it has a step of dividing the processing member 10B along a region overlapping with the region between the first bonding layer 305a and the second bonding layer 305b (see FIGS. 7 (T8), 8 (D-1) and 8 (D-2)).

[0175] Here, different steps will be described in detail, and for parts where the same steps can be used, the above description will be incorporated by reference.

[0176] 《First Step》 In the first step, prepare the processing member 10B (see FIGS. 8 (A-1) and 8 (A-2 ), and form an opening in the region of the second substrate 370 that overlaps with the region between the first bonding layer 305a and the second bonding layer 305b (see FIGS. 7 (T1), 8 (B-1) and 8 ( B-2)).

[0177] For example, divide the second substrate 370 into a second substrate 370a and a second substrate 370b, and form a continuous opening between the second substrate 370a and the second substrate 370b. Alternatively, a method of piercing the second substrate 370 using a sharp tip, a method using a laser or the like (for example, a laser ablation method), etc. may be used to form a plurality of openings in a dashed line shape.

[0178] 《Second Step》 In the second step, supply the processing member 10B to a processing member support portion (not shown) (see FIG. 7 (T2)).

[0179] 《Third Step》 In the third step, for example, using a processing member support portion, control the temperature of the processing member 10B to a predetermined value, and evacuate the chamber having the processing member support portion inside (see FIG. 7 (T3) for reference ). ​​​​​)。The chamber has a space that can be sealed.

[0180] 《Fourth Step》 In the fourth step, a source gas containing a precursor compound is supplied to the chamber, and after the supply the source gas is then purged from the chamber (see Fig. 7 (T4)).

[0181] 《Fifth Step》 In the fifth step, a source gas containing an oxidant is supplied to the chamber, and after the supply the cha mber is evacuated (see Fig. 7 (T5)).

[0182] Note that when this step is completed, an insulating layer containing an oxide of the precursor compound is formed on the surface of the processing member 10 B. According to this method, a dense film can be formed on a surface having a complex shape. As a result, an insulating layer with few defects such as pinholes can be formed. For example, from the opening formed in the first step, the source gas in the fourth and fifth steps can enter and an insulating layer can be formed inside the opening.

[0183] 《Sixth Step》 In the sixth step, if the number of repetitions of the cycle including the third and fourth steps is less than a predetermined number of times, return to the fourth step, and if it is greater than or equal to the predetermined number of times proceed to the seventh step (see Fig. 7 (T6)).

[0184] 《Seventh Step》 In the seventh step, the processing member 10B is taken out of the chamber. Here, the formation of the insulating layer 3 90 is completed (see Fig. 7 (T7), Fig. 8 (C-1) and Fig. 8 (C-2)).

[0185] 《Eighth Step》 In the eighth step, the processing member 10B is divided along the region overlapping the region between the first bonding layer 305a and the second bonding layer 305b (see FIGS. 7 (T8), 8 (D-1) and FIG. 8 (D-2)). When this step is completed, a first functional panel 300(1) with an insulating layer 390a containing an oxide of the precursor compound formed on the surface with a predetermined thickness and a second functional panel 300(2) with an insulating layer 390b formed on the surface with a predetermined thickness can be provided. The first functional panel 300(1) includes a first base material 310a, a second base material 370a having a region overlapping the first base material 310a, a bonding layer 305a having a function of bonding the second base material 370a to one surface of the first base material 310a, and a functional layer 330a in a region surrounded by the first base material 310a, the second base material 370a, and the bonding layer 305a. And the functional layer 3 30a includes a plurality of functional elements.

[0186] The first functional panel 300(1) has the first base material 310a, and with the division, the first base material 3 10a has an end face where the insulating layer 390a is not formed.

[0187]

[0188] The second functional panel 300(2) includes a first base material 310b, a second base material 370b having a region overlapping the first base material 310b, a bonding layer 305b having a function of bonding the second base material 370b to one surface of the first base material 310b, and a functional layer 330b in a region surrounded by the first base material 310b, the second base material 370b, and the bonding layer 305b. And the functional layer 3

[0189] 30b includes a plurality of functional elements.

[0189] The second functional panel 300(2) has a first base material 310b, and with the division, the first base material 3 10b has an end face on which the insulating layer 390b is not formed.

[0190] The method for manufacturing a functional panel described in this embodiment supplies a source gas containing a precursor compound , and after the supply, purges the source gas from the chamber, and supplies a source gas containing an oxidant , and after the supply, purges the source gas from the chamber, and is configured to include . Thereby, an insulating layer containing an oxide of the precursor compound can be formed on the surface of the processing member . As a result, a novel method for manufacturing a functional panel can be provided.

[0191] Note that this embodiment can be appropriately combined with other embodiments shown in this specification .

[0192] (Embodiment 3) In this embodiment, the configuration of a film forming system that can be used for manufacturing a functional panel according to one aspect of the present invention will be described with reference to FIGS. 9 and 10. FIG. 9 is a diagram for explaining the configuration of a film forming system that can be used for manufacturing a functional panel according to one aspect of the present invention.

[0193] FIG. 9 is a diagram for explaining the configuration of a film forming system that can be used for manufacturing a functional panel according to one aspect of the present invention. FIG. 9(A) is a schematic diagram of a cluster type film forming system 1000 according to one aspect of the present invention, and FIG. 9(B) is a schematic diagram of an in-line type film forming system 1000B.

[0194] FIG. 10 is a diagram for explaining the configuration of a film forming apparatus that can be used in a film forming system according to one aspect of the present invention. FIG. 10(A) shows a state in which a film is being formed on a first base material 310 using a film forming apparatus 100 and a shadow mask 170 that can be used in a film forming apparatus system according to one aspect of the present invention. is a cross-sectional view for explanation, and FIG. 10(B) is a cross-sectional view for explaining the state of forming a film on the processing member 10 using the atomic layer deposition apparatus ALD is a cross-sectional view for explaining the state of forming a film on it.

[0195] <Configuration Example 1 of Film Forming System.> The film forming system 1000 includes a loading device LD, a transfer chamber DC connected to the loading device LD, an unloading device ULD connected to the transfer chamber DC, a film forming device 100 connected to the transfer chamber DC, a sealing chamber SU , an atomic layer deposition apparatus ALD, and a chemical vapor deposition apparatus CVD (see FIG. 9(A)). .

[0196] And the loading device LD loads the first substrate 310. The transfer chamber DC receives the first substrate 310 and transfers the first substrate 310. Also, the unloading device ULD unloads the processing member 10 . .

[0197] Also, the film forming device 100 receives the first substrate 310 and forms a film of a film forming material on the first substrate 310 .

[0198] Also, the sealing chamber SU receives the first substrate 310, forms a sealing material on the first substrate 310 , and unloads the processing member 10. For example, a bonding layer is formed on the first substrate 310, and the first substrate 310 and the second substrate 370 are bonded together using the bonding layer to form a sealing material.

[0199] Also, the atomic layer deposition apparatus ALD receives the processing member 10 and forms a film of a film forming material on the processing member 10 .

[0200] Also, the chemical vapor deposition apparatus CVD receives the processing member 10 and forms a film of a film forming material on the processing member 10 .

[0201] The film forming device 100, the atomic layer deposition apparatus ALD, and the chemical vapor deposition apparatus CVD are provided with transfer ports​​ In addition, the film forming apparatus 100 receives the shadow mask 170.

[0202] Note that a plurality of film forming apparatuses, an atomic layer deposition apparatus ALD or a chemical vapor deposition apparatus CVD may be connected to the transfer chamber D C.

[0203] <Configuration Example 2 of Film Forming System.> The film forming system 1000B includes a loading apparatus LD, a film forming apparatus 100A connected to the loading apparatus LD , a film forming apparatus 100B connected to the film forming apparatus 100A, a film forming apparatus 100C connected to the film forming apparatus 100B, a film forming apparatus 100D connected to the film forming apparatus 100C, a sealing chamber SU connected to the film forming apparatus 100D, an atomic layer deposition apparatus ALD connected to the sealing chamber SU, and an atomic layer deposition apparatus ALD, a chemical vapor deposition apparatus CVD connected to the chemical vapor deposition apparatus CVD, and an unloading apparatus ULD connected to the chemical vapor deposition apparatus CVD (see FIG. 9(B)).

[0204] Then, the loading apparatus LD loads the first substrate 310. The unloading apparatus ULD unloads the processing member 1 0.

[0205] In addition, the film forming apparatuses 100A to 100D receive the first substrate 310 and deposit a film material on the first substrate 310 and convey the first substrate 310.

[0206] In addition, the sealing chamber SU receives the first substrate 310, forms a sealing material on the first substrate 310, and unloads the processing member 10. For example, a bonding layer is formed on the first substrate 310, and the first substrate 310 and the second substrate 370 are bonded together using the bonding layer to form a sealing material.

[0207] In addition, the atomic layer deposition apparatus ALD receives the processing member 10, deposits a film material on the processing member 10, and conveys the processing member 10.

[0208] In addition, the chemical vapor deposition apparatus CVD carries the workpiece 10 and deposits a film on the workpiece 10 with a film-forming material. Then, the processed workpiece 10 is transported.

[0209] The film forming apparatuses 100A to 100D, the sealing chamber SU, the atomic layer deposition apparatus ALD, and the chemical The vapor deposition apparatus CVD includes an entrance and an exit. A shadow mask 170 is carried into the film forming apparatus 100D.

[0210] Each of the devices constituting the film forming system 1000 or the film forming system 1000B is In order to prevent moisture from adhering, the container is filled with an inert gas (such as nitrogen gas) with a controlled dew point. It is preferable to keep the pressure reduced, and desirably maintain the reduced pressure.

[0211] The film forming system 1000B described in this embodiment includes a plurality of film forming apparatuses 100A to The apparatus 100D includes a sealing chamber SU, an atomic layer deposition apparatus ALD, and a chemical vapor deposition apparatus CVD. .

[0212] This allows a laminated film in which a plurality of films are laminated to be formed on the first base material 310. It is possible to laminate a film material onto a film that has been previously deposited without exposing the film to the atmosphere. In addition, the inclusion of impurities can be suppressed. In addition, the throughput is high. The first base material 310, the second base material 370, and the first base material 310 and the second base material 370 are bonded together. In the processed member 10 having the bonding layer, an insulating layer with few pinholes can be formed.

[0213] The individual elements constituting the film forming system 1000 or the film forming system 1000B will be described below. This will be described below. Note that these configurations cannot be clearly separated, and one configuration may also serve as another configuration or may include a part of another configuration.

[0214] 《Film Deposition Apparatus 100》 The film deposition apparatus 100 described in this embodiment includes a processing member support portion 110 having a function of supporting a first substrate 310 and a vapor deposition source 120A having a function of ejecting a film forming material so as to adhere to the first substrate 310 and a shadow mask support portion 115 having a function of supporting a shadow mask 170 between the first substrate 310 and the vapor deposition source 120A and a film deposition chamber 190 in which the processing member support portion 110, the vapor deposition source 120A, and the shadow mask support portion 115 are disposed inside (see Fig. 10(A)). It has (see Fig. 10(A)). (See Fig. 10(A)).

[0215] Also, the film deposition apparatus 100 may have power 140. For example, the film deposition apparatus 100 may have a function of relatively moving the processing member support portion 110 together with the first substrate 310 with respect to the vapor deposition source 120A using the power 140. Thereby, the film forming material ejected from the vapor deposition source 120A can be uniformly deposited on the surface of the first substrate 310. Thereby, the film forming material ejected from the vapor deposition source 120A can be uniformly deposited on the surface of the first substrate 310. Thereby, the film forming material ejected from the vapor deposition source 120A can be uniformly deposited on the surface of the first substrate 310.

[0216] Also, the film deposition apparatus 100 may move the shadow mask support portion 115 together with the shadow mask 170, the processing member support portion 110, and the first substrate 310, for example, using the power 140 . .

[0217] Also, the film deposition apparatus 100 may have a detector 198 for detecting the position of the shadow mask 170 with respect to the first substrate 310 . For example, it moves using the processing member support portion 110 or / and the shadow mask support portion 115, and with respect to the shadow mask 170, the first substrate 45 Place 310 at a predetermined position.

[0218] In addition, the film forming apparatus 100 may have an exhaust device 197 for controlling the pressure of the film forming chamber 190 and a pipe 196 for introducing a predetermined gas into the film forming chamber 1 90.

[0219] In addition, the film forming apparatus 100 may have a door valve 195 having a function of loading or unloading the first substrate 310 or / and the shadow mask 170 into or from the film forming chamber 190.

[0220] In addition, the film forming apparatus 100 may have a vapor deposition source 120B in addition to the vapor deposition source 120A. Further, it may have a shielding plate 121A for shielding the film forming material ejected from the vapor deposition source 120A. Further, it may have a detector 122A for detecting the amount of the film forming material ejected from the vapor deposition source 120A per unit time.

[0221] 《Sealing Chamber SU》 The sealing chamber SU has a function of bonding, for example, the first substrate 310 and the second substrate 370 with a bonding layer. Thereby, the functional layer or the like formed on the surface of the first substrate 310 is protected using the second substrate 370.

[0222] It can be provided with a function of replacing the first substrate 310. For example, a part of the functional panel fabricated on the first substrate 310 can be separated from the first substrate 310 and bonded to another substrate. Specifically, it can be replaced from a substrate without flexibility to a substrate with flexibility. In this specification, the term "first substrate 310" is also used for the substrate after replacing the first substrate 310.

[0223] ​​​​​​​​​​​"Atomic Layer Deposition (ALD) Equipment" The atomic layer deposition (ALD) equipment has a function of depositing various film-forming materials on the surface of the processing member 10 having a complex structure on its surface. For example, it has a function of forming a film having a thickness of 20 nm or more and 200 nm or less on the processing member 10.

[0224] For example, when small holes called pinholes are formed on the surface of the processing member 10, the film-forming material can be deposited by penetrating into the pinholes to fill the pinholes.

[0225] In a film-forming apparatus using the conventional CVD method, one or more kinds of source gases for the reaction are simultaneously supplied to the chamber during film formation. In a film-forming apparatus using the ALD method, the source gases for the reaction are sequentially introduced into the chamber, and film formation is performed by repeating the order of gas introduction. For example, by switching each switching valve (also called a high-speed valve), two or more kinds of source gases are sequentially supplied to the chamber, and an inert gas (such as argon or nitrogen) is introduced after the first source gas so that the plurality of source gases do not mix, and then the second source gas is introduced. Alternatively, instead of introducing the inert gas, the first source gas may be exhausted by vacuum pumping and then the second source gas may be introduced. The first source gas adsorbs on the surface of the substrate to form the first single atomic layer, and reacts with the second source gas introduced later to stack the second single atomic layer on the first single atomic layer to form a thin film. By repeating this gas introduction order a plurality of times while controlling it until the desired thickness is reached, a thin film with excellent step coverage can be formed. Since the thickness of the thin film can be adjusted by the number of times the gas introduction order is repeated, precise film thickness adjustment is possible, which is suitable for fabricating fine transistors. ​​​​

[0226] In addition, the ALD method has no plasma damage.

[0227] Fig. 10(B) shows an example of a film-forming apparatus that uses the ALD method (also referred to as an atomic layer deposition apparatus ALD). The atomic layer deposition apparatus ALD includes a film-forming chamber (chamber 180), raw material supply units 181a, 181b, high-speed valves 182a, 182b that are flow controllers, raw material inlets 183a, 183b, a raw material outlet 184, and an exhaust device 185. The raw material inlets 183a, 183b installed in the chamber 180 are connected to the raw material supply units 181a, 1 81b via supply pipes and valves respectively, and the raw material outlet 184 is connected to the exhaust device 185 via a discharge pipe, valves, and a pressure regulator.

[0228] Inside the chamber, there is a processing member support part 186 equipped with a heater, and a first substrate 310 to be film-formed is placed on the processing member support part 1 86.

[0229] In the raw material supply units 181a, 181b, raw material gas is formed from solid raw materials or liquid raw materials by means of vaporizers and heating means. Alternatively, the raw material supply units 181a, 181b may be configured to supply gaseous raw materials.

[0230] Also, although an example of providing two raw material supply units 181a, 181b is shown, it is not particularly limited , and three or more may be provided. In addition, the high-speed valves 182a, 182b can be precisely controlled by time and are configured to supply either raw material gas or inert gas. The high-speed valves 182a, 182b are flow controllers for raw material gas and can also be said to be flow controllers for inert gas.

[0231] In the film forming apparatus shown in Fig. 10(B), the processing member 10 is carried onto the processing member support portion 186, and after the chamber 180 is sealed, the processing member 10 is heated by the heater of the processing member support portion 186 to a desired temperature (for example, 80 °C or higher, 100 °C or higher, or 150 °C or higher), and the supply of the raw material gas, the exhaust by the exhaust device 185, the supply of the inert gas, and the exhaust by the exhaust device 185 are repeated to form a thin film on the surface of the substrate. In the film forming apparatus shown in Fig. 10(B), by appropriately selecting the raw materials (such as volatile organometallic compounds) used in the raw material supply portions 181a and 181b, an oxide (including composite oxides) containing one or more elements selected from hafnium, aluminum, tantalum, zirconium, etc. can be formed into an insulating layer. Specifically, an insulating layer composed of hafnium oxide, an insulating layer composed of aluminum oxide, an insulating layer composed of hafnium silicate, or an insulating layer composed of aluminum silicate can be formed. Also, by appropriately selecting the raw materials (such as volatile organometallic compounds) used in the raw material supply portions 181a and 181b, thin films such as a tungsten layer, a titanium layer, and a nitride layer such as a titanium nitride layer can also be formed. For example, when forming a hafnium oxide layer by an atomic layer deposition apparatus ALD, a raw material gas obtained by vaporizing a liquid containing a solvent and a hafnium precursor compound (hafnium alkoxide, hafnium amide such as tetrakis dimethylamide hafnium (TDMAH), etc.) and an oxidizing agent, ozone (O ) are used as two types of gases. In this case, the supply from the raw material supply portion 181a is carried out.

[0232] In the film forming apparatus shown in Fig. 10(B), by appropriately selecting the raw materials (such as volatile organometallic compounds) used in the raw material supply portions 181a and 181b, an oxide (including composite oxides) containing one or more elements selected from hafnium, aluminum, tantalum, zirconium, etc. can be formed into an insulating layer. Specifically, an insulating layer composed of hafnium oxide, an insulating layer composed of aluminum oxide, an insulating layer composed of hafnium silicate, or an insulating layer composed of aluminum silicate can be formed. Also, by appropriately selecting the raw materials (such as volatile organometallic compounds) used in the raw material supply portions 181a and 181b, thin films such as a tungsten layer, a titanium layer, and a nitride layer such as a titanium nitride layer can also be formed. For example, when forming a hafnium oxide layer by an atomic layer deposition apparatus ALD, a raw material gas obtained by vaporizing a liquid containing a solvent and a hafnium precursor compound (hafnium alkoxide, hafnium amide such as tetrakis dimethylamide hafnium (TDMAH), etc.) and an oxidizing agent, ozone (O ) are used as two types of gases. In this case, the supply from the raw material supply portion 181a is carried out. In the film forming apparatus shown in Fig. 10(B), by appropriately selecting the raw materials (such as volatile organometallic compounds) used in the raw material supply portions 181a and 181b, an oxide (including composite oxides) containing one or more elements selected from hafnium, aluminum, tantalum, zirconium, etc. can be formed into an insulating layer. Specifically, an insulating layer composed of hafnium oxide, an insulating layer composed of aluminum oxide, an insulating layer composed of hafnium silicate, or an insulating layer composed of aluminum silicate can be formed. Also, by appropriately selecting the raw materials (such as volatile organometallic compounds) used in the raw material supply portions 181a and 181b, thin films such as a tungsten layer, a titanium layer, and a nitride layer such as a titanium nitride layer can also be formed. For example, when forming a hafnium oxide layer by an atomic layer deposition apparatus ALD, a raw material gas obtained by vaporizing a liquid containing a solvent and a hafnium precursor compound (hafnium alkoxide, hafnium amide such as tetrakis dimethylamide hafnium (TDMAH), etc.) and an oxidizing agent, ozone (O is carried out. In the film forming apparatus shown in Fig. 10(B), by appropriately selecting the raw materials (such as volatile organometallic compounds) used in the raw material supply portions 181a and 181b, an oxide (including composite oxides) containing one or more elements selected from hafnium, aluminum, tantalum, zirconium, etc. can be formed into an insulating layer. Specifically, an insulating layer composed of hafnium oxide, an insulating layer composed of aluminum oxide, an insulating layer composed of hafnium silicate, or an insulating layer composed of aluminum silicate can be formed. Also, by appropriately selecting the raw materials (such as volatile organometallic compounds) used in the raw material supply portions 181a and 181b, thin films such as a tungsten layer, a titanium layer, and a nitride layer such as a titanium nitride layer can also be formed. For example, when forming a hafnium oxide layer by an atomic layer deposition apparatus ALD, a raw material gas obtained by vaporizing a liquid containing a solvent and a hafnium precursor compound (hafnium alkoxide, hafnium amide such as tetrakis dimethylamide hafnium (TDMAH), etc.) and an oxidizing agent, ozone (O

[0233] For example, when forming a hafnium oxide layer by an atomic layer deposition apparatus ALD, a raw material gas obtained by vaporizing a liquid containing a solvent and a hafnium precursor compound (hafnium alkoxide, hafnium amide such as tetrakis dimethylamide hafnium (TDMAH), etc.) and an oxidizing agent, ozone (O ) are used as two types of gases. In this case, the supply from the raw material supply portion 181a is carried out. In the film forming apparatus shown in Fig. 10(B), by appropriately selecting the raw materials (such as volatile organometallic compounds) used in the raw material supply portions 181a and 181b, an oxide (including composite oxides) containing one or more elements selected from hafnium, aluminum, tantalum, zirconium, etc. can be formed into an insulating layer. Specifically, an insulating layer composed of hafnium oxide, an insulating layer composed of aluminum oxide, an insulating layer composed of hafnium silicate, or an insulating layer composed of aluminum silicate can be formed. Also, by appropriately selecting the raw materials (such as volatile organometallic compounds) used in the raw material supply portions 181a and 181b, thin films such as a tungsten layer, a titanium layer, and a nitride layer such as a titanium nitride layer can also be formed. 3 In the film forming apparatus shown in Fig. 10(B), by appropriately selecting the raw materials (such as volatile organometallic compounds) used in the raw material supply portions 181a and 181b, an oxide (including composite oxides) containing one or more elements selected from hafnium, aluminum, tantalum, zirconium, etc. can be formed into an insulating layer. Specifically, an insulating layer composed of hafnium oxide, an insulating layer composed of aluminum oxide, an insulating layer composed of hafnium silicate, or an insulating layer composed of aluminum silicate can be formed. Also, by appropriately selecting the raw materials (such as volatile organometallic compounds) used in the raw material supply portions 181a and 181b, thin films such as a tungsten layer, a titanium layer, and a nitride layer such as a titanium nitride layer can also be formed. The first source gas is TDMAH, and the second source gas supplied from the source supply unit 181b is ozone. The chemical formula of tetrakis(dimethylamide)hafnium is Hf[N(CH 3 ) 2 4 is. Also, as other material liquids, there are tetrakis(ethylmethylamide)hafnium and the like.

[0234] When forming an aluminum oxide layer by an atomic layer deposition apparatus ALD, a liquid containing a solvent and an aluminum precursor compound (such as TMA: trimethylaluminum) is vaporized to obtain a source gas , and two types of gases, H 2 O, are used as the oxidant. In this case, the first source gas supplied from the source supply unit 181a is TMA, and the second source gas supplied from the source supply unit 181b is H 2 O. The chemical formula of trimethylaluminum is Al(CH 3 ) 3 is. Also, as other material liquids, there are tris(dimethylamide)aluminum, triisobutylal uminum, aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate) and the like.

[0235] When forming a tungsten layer by an atomic layer deposition apparatus ALD, WF 6 gas and B 2 H 6 gas are sequentially introduced repeatedly to form an initial tungsten layer, and then, WF 6 gas and H 2 gas are used to form a tungsten layer. Instead of B 2 H 6 gas, SiH 4 gas ​These gases may be controlled by a mass flow controller. You may do so.

[0236] Chemical Vapor Deposition Equipment (CVD) The chemical vapor deposition apparatus CVD can form a film of a film material on a processed member by using a chemical vapor deposition method. For example, a film forming apparatus that utilizes a plasma CVD method can be used.

[0237] Instead of or in addition to the chemical vapor deposition (CVD) apparatus, a metal organic chemical vapor deposition (MOCVD) method may be used. Metal Organic Chemical Vapor Deposition) Alternatively, a deposition apparatus utilizing a deposition method or a deposition apparatus utilizing a sputtering method may be used.

[0238] <Workpiece support portion 110> The processed member support 110 has a function of supporting the first base material 310. The holder 110 has a function of moving the first base member 310 relative to the deposition source 120A. This is also fine.

[0239] For example, a structure for gripping or supporting the vicinity of the end of the first base material 310 is provided as a processed member support part 1. Specifically, it can be used for a member having a clamp mechanism or an L-shaped support. In addition, a structure for holding or supporting the first base material 310 can be used. Specifically, when the first base material 310 has a rectangular shape, The first base material 310 may be supported in the vicinity of its four corners.

[0240] When the processed member support part 110 is moved relative to the deposition source 120A, for example, a power 40 can be used. Specifically, a servo motor or a stepping motor can be used. Alternatively, the processing member support portion 110 may be moved using an air cylinder. Specifically, the processing member support portion 110 may be rotated above the vapor deposition source 120A or passed across above the vapor deposition source 120A.

[0241] Note that the processing member support portion 110 may have a function of keeping the position of the first substrate 310 with respect to the shadow mask 170 constant. For example, it may have a function of bringing the first substrate 310 into close contact with the shadow mask 170. Specifically, an elastic body such as a spring may be used to press the first substrate 310 against the shadow mask. Also, a magnet or the like may be arranged so as to sandwich the first substrate 310 between the shadow mask and the shadow mask may be attracted to the first substrate 310.

[0242] Note that the first substrate 310 is not particularly limited as long as it has heat resistance to withstand the manufacturing process and a thickness and size applicable to the manufacturing apparatus.

[0243] Also, the first substrate 310 can include various functional layers. For example, a functional circuit, a functional element, an optical element, a functional film, or the like, or a layer including a plurality of these selected therefrom can be mentioned. Specifically, a pixel circuit of a known display device, a driving circuit of a pixel, a display element, a color filter,

[0244] a moisture-proof film, or the like, or a layer including a plurality of these selected therefrom can be mentioned.

[0245] For example, an inorganic material such as glass, ceramics, or metal can be used for the first substrate 310. ​​​​​​​​​

[0246] Specifically, alkali-free glass, soda-lime glass, potash glass, or crystal glass etc. can be used for the first substrate 310.

[0247] Specifically, an inorganic oxide film, an inorganic nitride film, or an inorganic oxynitride film etc. can be used for the first substrate 31 0. For example, silicon oxide, silicon nitride, silicon oxynitride, alumina film, etc. can be used for the first substrate 310.

[0248] For example, an organic material such as a resin, a resin film, or a plastic can be used for the first substrate 310 can be used.

[0249] Specifically, a resin film or a resin plate such as polyester, polyolefin, polyamide, polyimide, polycarbonate or acrylic resin etc. can be used for the first substrate 310. can be used.

[0250] For example, a composite material obtained by laminating a thin plate-like glass plate or a film of an inorganic material etc. on a resin film etc. can be used for the first substrate 310 can be used.

[0251] For example, a composite material in which fibrous or particulate metal, glass, or inorganic material etc. is dispersed in a resin film can be used for the first substrate 310 can be used.

[0252] For example, a composite material in which fibrous or particulate resin or organic material etc. is dispersed in an inorganic material can be used for the first substrate 310.

[0253] In addition, a single-layer material or a laminated material in which a plurality of layers are laminated can be used for the first substrate 310 can be used. For example, a laminate in which an insulating layer etc. that prevents diffusion of impurities contained in the material is laminated The layer material can be used for the first substrate 310.

[0254] Specifically, a laminated material in which one or more films selected from a silicon oxide film, a silicon nitride film, or a silicon oxynitride film or the like that prevents diffusion of impurities contained in the glass is laminated can be applied to the first substrate 310.

[0255] 《Shadow mask support portion 115》 The shadow mask support portion 115 has a function of supporting the shadow mask 170. Also, the shadow mask support portion 115 may have a function of relatively moving the shadow mask with respect to the evaporation source 120A.

[0256] For example, a structure for gripping or supporting the vicinity of the end portion of the shadow mask 170 or the like can be used for the shadow mask support portion 115. Specifically, a member having a clamp mechanism or a supporting member such as an L-shape can be used. Also, a plurality of structures for gripping or supporting the shadow mask 170 may be provided. Specifically, when the shadow mask 170 has a rectangular shape, the vicinity of the four corners of the shadow mask 170 may be supported.

[0257] When relatively moving the shadow mask support portion 115 with respect to the evaporation source 120A, for example, power 140 can be used. Specifically, the shadow mask support portion 115 may be moved using a servo motor, a stepping motor, or an air cylinder. Specifically, the shadow mask support portion 115 may be rotated above the evaporation source 120A or passed so as to cross above the evaporation source 12 0A.

[0258] 《Shadow mask 170》 ​​​​The shadow mask 170 has a shielding region that functions to block the film-forming material, and an opening region surrounded by the shielding region.

[0259] 《Evaporation source》 The film-forming apparatus 100 includes one or more evaporation sources. For example, it has an evaporation source 120A and an evaporation source 120B.

[0260] The same material may be ejected from the evaporation source 120A and the evaporation source 120B. Thereby, the thickness of the film-forming material deposited per unit time on the surface of the first substrate 310 can be increased.

[0261] Different materials may be ejected from the evaporation source 120A and the evaporation source 120B. Thereby, a film in which different materials are mixed can be formed on the surface of the first substrate 310. In other words, co-evaporation can be performed.

[0262] The evaporation source 120A has a function of ejecting the film-forming material. For example, it is preferable that the evaporation source 120A has directivity in the direction of ejecting the film-forming material. Thereby, the usage efficiency of the film-forming material can be increased.

[0263] Specifically, a point-source type evaporation source or a linear-source type evaporation source, etc. can be used for the evaporation source 120 A. Alternatively, an evaporation source in which point sources are arranged in a linear shape or a matrix shape, etc., or an evaporation source that ejects the vaporized film-forming material from a slit can be used.

[0264] Further, the film-forming apparatus 100 may have a function of relatively moving the evaporation source 120A with respect to the processing member support portion 110. For example, the evaporation source 120A may be scanned relative to the first substrate 310 using power while forming a film.

[0265] ​​​ "Film Deposition Chamber" The film deposition chamber 190 can reduce the internal pressure to below atmospheric pressure. For example, the internal pressure can be reduced to 10 - 3 Pa or less.

[0266] The exhaust device 197 can reduce the pressure inside the film deposition chamber 190. For example, a mechanical pump, a turbo pump, and / or a cryopump, etc. can be used for the exhaust device 197. It is possible.

[0267] The film deposition chamber 190 can be filled with gas inside. Also, the pipe 196 can supply, for example, nitrogen gas to the film deposition chamber. etc.

[0268] The film deposition chamber 190 can be equipped with a function to heat the inner wall. Thereby, the molecules adsorbed on the inner wall can be efficiently desorbed. For example, a heater or a pipe supplied with a heat medium, etc. may be provided on the wall surface. etc.

[0269] Note that this embodiment can be appropriately combined with other embodiments shown in this specification.

[0270] (Embodiment 4) In this embodiment, the configuration of the function panel of one aspect of the present invention that can be used for an input / output device will be described with reference to FIGS. 11 to 13.

[0271] FIGS. 11 to 13 are diagrams for explaining the configuration of the function panel of one aspect of the present invention.

[0272] FIG. 11(A) is a top view of the function panel 200TP of one aspect of the present invention, and FIG. 11(B) is a cross-sectional view taken along the cutting lines A - B and C - D in FIG. 11(A). Also, FIG. 11( ​​​​Figure (C) is a top view showing a partial configuration of the functional panel 200TP, and Figure 11(D) is a cross-sectional view taken along the cutting line W3-W4 shown in Figure 1 1(C).

[0273] Figure 13 is a projection view for explaining the functional panel 200TP according to one aspect of the present invention. For the sake of explanation, a part of the functional panel 200TP is enlarged and shown.

[0274] <Configuration Example of Functional Panel> The functional panel 200TP described in the present embodiment includes a first base material 210, a second base material 270 having a region overlapping with the first base material 21 0, a bonding layer 205 having a function of bonding the second base material 270 to one surface of the first base material 210, an insulating layer 290 in contact with the first base material 210, the second base material 270, and the bonding layer 205, and a functional layer in a region surrounded by the first base material 210, the second base material 270, and the bonding layer 205. And the functional layer includes a plurality of functional elements. Specifically, it includes pixels 202 and sensing elements in the region 201. Thereby, the functional panel 200TP has a function of being supplied with an image signal and displaying an image.

[0275] Also, it has a function of being supplied with a control signal and being able to supply a detection signal. Note that the functional panel 200TP can be referred to as an input / output panel or a touch panel.

[0276] The functional panel 200TP according to one aspect of the present invention has pixels 202, a driving circuit GD that supplies a control signal to the pixels 202, a driving circuit SD that supplies a display signal to the pixels 202, and a region 201 where the pixels 202 are disposed (see Figures 11(A) and 11(B)).

[0277]

[0278] ​​​​​The pixel 202 is supplied with a display signal (see Fig. 11(A)). The pixel 202 includes sub-pixels 20 such as 202R. The sub-pixel 202R has a function of displaying red. Also, for example, it includes a sub-pixel for displaying green and a sub-pixel for displaying blue, etc.

[0279] The sub-pixel 202R includes a pixel circuit and a display module 280R (see Fig. 11(B) ).

[0280] The pixel circuit includes a driving transistor M0 and a capacitive element C.

[0281] The display module 280R includes a light-emitting element 250R and a coloring layer 267R having a region overlapping with the light-emitting element 250R on the side where the light-emitting element 250R emits light. Note that the light-emitting element 250R can be said to be one aspect of the display element. The light-emitting element 250R includes a lower electrode, an upper electrode, and a layer containing a light-emitting organic compound.

[0282] The circuit includes a driving transistor M0 and is disposed between the first substrate 210 and the light-emitting element 250R.

[0283] Also, the circuit sandwiches an insulating film 221 between itself and the light-emitting element 250R. The driving transistor M0 includes a second electrode. The second electrode is electrically connected to the lower electrode of the light-emitting element 250R through an opening provided in the insulating film 221.

[0284] The capacitive element C includes a first electrode and a second electrode. The first electrode is electrically connected to the gate of the driving transistor M0, and the second electrode is electrically connected to the second electrode of the driving transistor M0.

[0285] The capacitive element C includes a first electrode and a second electrode. The first electrode is electrically connected to the gate of the driving transistor M0, and the second electrode is electrically connected to the second electrode of the driving transistor M0. The capacitive element C includes a first electrode and a second electrode. The first electrode is electrically connected to the gate of the driving transistor M0, and the second electrode is electrically

[0286] The drive circuit SD includes a transistor MD and a capacitor CD.

[0287] The functional panel 200TP according to one aspect of the present invention has a wiring 21 1 that is electrically connected to the drive circuit SD, a terminal 219 that is electrically connected to the wiring 211, and a flexible printed circuit board 209 that is electrically connected to the terminal 219.

[0288] Further, it includes a light-shielding layer 267BM having an opening in a region overlapping with the sub-pixel 202R.

[0289] Further, it includes a partition wall 228 that has an opening in a region overlapping with the light-emitting element 250R and covers an end portion of the lower electrode.

[0290] Further, it has a functional film 267p having a region overlapping with the region 201 (see FIG. 11(B)).

[0291] Note that the functional panel 200TP can display display information on the side where the second base material 270 is provided.

[0292] The functional panel 200TP has a second base material 270, and the second base material 270 has a function of supporting a plurality of control lines CL(i) and a plurality of signal lines ML(j).

[0293] The control line CL(i) extends in the row direction (the direction of the arrow indicated by R in the figure) and has a function of supplying a control signal. (See FIG. 13)

[0294] The signal line ML(j) extends in the column direction (the direction of the arrow indicated by C in the figure) and has a function of supplying a detection signal.

[0295] The functional panel 200TP has a first electrode C1(i) that is electrically connected to the control line CL(i). ​​​​and includes a second electrode C2(j) that does not overlap with the first electrode C1(i) and is electrically connected to the signal line ML(j) (see FIGS. 11(C) and 13).

[0296] The first electrode C1(i) or the second electrode C2(j) includes a conductive film having a light-transmissive region in a region overlapping with the pixel 202 or the sub-pixel 202R. Alternatively, the first electrode C1( i) or the second electrode C2(j) includes a mesh-shaped conductive film having an opening 767 in a region overlapping with the pixel 202 or the sub-pixel 202R.

[0297] The functional panel 200TP according to one aspect of the present invention has a terminal electrically connected to the control line CL(i) and a terminal electrically connected to the signal line ML(j). The terminal is electrically connected to the flexible printed circuit board FPFC2.

[0298] The functional panel 200TP described in this embodiment includes a first base material 210, a second base material 27 0, a bonding layer 205 that bonds the first base material 210 and the second base material 270, and a functional layer in a region surrounded by the first base material 210, the second base material 270, and the bonding layer 205. The functional layer includes a display element and a detection element. Thereby, an image signal supplied can be displayed, and a detection signal can be supplied according to a supplied control signal. As a result, a novel functional panel excellent in convenience or reliability can be provided.

[0299] For example, the functional panel 200TP has a function of detecting a proximity object and supplying detection information so as to be associated with the position information of the proximity object. Thereby, detection information including the position or locus of the detected object can be supplied. Specifically, the functional panel 200T ​​​​​​ The user of P can use a finger or the like that is close to or in contact with the function panel 200TP as a pointer to perform various gestures (such as tap, drag, swipe, or pinch-in).

[0300] In addition, the user of the function panel 200TP can supply various operation commands to the arithmetic unit. For example, the arithmetic unit supplied with the detection information supplied by the function panel 200TP can determine whether the supplied information satisfies a predetermined condition based on a program or the like and execute a command associated with a predetermined gesture.

[0301] Also, the function panel 200TP can display, for example, display information supplied by an arithmetic unit or the like.

[0302] The function panel 200TP has an insulating layer 290.

[0303] For example, a ceramic coating layer or a hard coat layer can be used as the insulating layer. Specifically, a layer containing aluminum oxide or a UV-cured resin layer can be used.

[0304] The function panel 200TP has a functional film 267p.

[0305] For example, an antireflection layer or the like that weakens the intensity of external light reflected by the function panel can be used as the functional film. Specifically, a circular polarizing plate or the like can be used.

[0306] Hereinafter, each element constituting the function panel 200TP will be described. Note that these configurations cannot be clearly separated, and there are cases where one configuration also serves as another configuration or includes a part of another configuration.

[0307] ​​​​​​​​​For example, the functional panel 200TP is a touch panel and also a detection panel or a display panel.

[0308] 《Overall Configuration》 The functional panel 200TP described in this embodiment has a first base material 210, a second base material 270, , a bonding layer 205, an insulating layer 290, or a functional layer.

[0309] The functional layer includes pixels 202, a driving circuit GD, a driving circuit SD, a region 201, sub-pixels 202R, a driving transistor M0, a capacitive element C, a display module 280R, a light-emitting element 250R, a coloring layer 267R, a pixel circuit, an insulating film 221, a wiring 211, a terminal 219, a light-shielding layer 267BM, or a partition wall 228.

[0310] The functional layer includes a control line CL(i), a wiring BR(i,j), a signal line ML(j), a first electrode C1 (i) or a second electrode C2(j).

[0311] In addition, the functional panel 200 has a flexible printed circuit board 209, a flexible printed circuit board FPC1, a flexible printed circuit board FPC2, or a functional film 267p.

[0312] 《First Base Material, Second Base Material, Bonding Layer, Insulating Layer》 For the first base material 210, the second base material 270, the bonding layer 205, and the insulating layer 290, for example, the same configuration as the functional panel described in Embodiment 1 can be used.

[0313] Also, a material having flexibility can be used for the first base material 210 and the second base material 270. For example, a material having a degree of flexibility that can be bent or folded can be used. Specifically, a flexible base material 210b, impurities ​A laminate in which a barrier film 210a for preventing diffusion, a base material 210b, and a resin layer 210c for bonding the barrier film 210a are laminated can be used as the first base material 210. Also, a laminate in which a flexible base material 270b, a barrier film 270a for preventing diffusion of impurities, and a resin layer 270c for bonding the base material 270b and the barrier film 270a are laminated can be used as the second base material 270 (see FIG. 12). A laminate in which a barrier film 210a for preventing diffusion, a base material 210b, and a resin layer 210c for bonding the barrier film 210a are laminated can be used as the first base material 210. Also, a laminate in which a flexible base material 270b, a barrier film 270a for preventing diffusion of impurities, and a resin layer 270c for bonding the base material 270b and the barrier film 270a are laminated can be used as the second base material 270 (see FIG. 12). A laminate in which a barrier film 210a for preventing diffusion, a base material 210b, and a resin layer 210c for bonding the barrier film 210a are laminated can be used as the first base material 210. Also, a laminate in which a flexible base material 270b, a barrier film 270a for preventing diffusion of impurities, and a resin layer 270c for bonding the base material 270b and the barrier film 270a are laminated can be used as the second base material 270 (see FIG. 12). A laminate in which a barrier film 210a for preventing diffusion, a base material 210b, and a resin layer 210c for bonding the barrier film 210a are laminated can be used as the first base material 210. Also, a laminate in which a flexible base material 270b, a barrier film 270a for preventing diffusion of impurities, and a resin layer 270c for bonding the base material 270b and the barrier film 270a are laminated can be used as the second base material 270 (see FIG. 12). A laminate in which a barrier film 210a for preventing diffusion, a base material 210b, and a resin layer 210c for bonding the barrier film 210a are laminated can be used as the first base material 210. Also, a laminate in which a flexible base material 270b, a barrier film 270a for preventing diffusion of impurities, and a resin layer 270c for bonding the base material 270b and the barrier film 270a are laminated can be used as the second base material 270 (see FIG. 12).

[0314] 《Functional Layer》 For example, the same configuration as the functional panel described in Embodiment 1 can be used for the sub-pixel 202R, the display element, the pixel circuit, the drive circuit GD, the wiring 211, and the terminal 219. For example, the same configuration as the functional panel described in Embodiment 1 can be used for the sub-pixel 202R, the display element, the pixel circuit, the drive circuit GD, the wiring 211, and the terminal 219.

[0315] 《Detection Element, Detection Circuit》 A detection element that detects capacitance, illuminance, magnetic force, radio waves, pressure, etc. and supplies a signal based on the detected physical quantity can be used in the functional layer. A detection element that detects capacitance, illuminance, magnetic force, radio waves, pressure, etc. and supplies a signal based on the detected physical quantity can be used in the functional layer.

[0316] For example, a conductive film, a photoelectric conversion element, a magnetic detection element, a piezoelectric element, a resonator, etc. can be used as the detection element. For example, a conductive film, a photoelectric conversion element, a magnetic detection element, a piezoelectric element, a resonator, etc. can be used as the detection element.

[0317] For example, a detection circuit having a function of supplying a signal that changes based on the capacitance parasitic on the conductive film can be used in the functional layer. Thereby, a finger or the like close to the conductive film in the air can be detected using the change in capacitance. For example, a detection circuit having a function of supplying a signal that changes based on the capacitance parasitic on the conductive film can be used in the functional layer. Thereby, a finger or the like close to the conductive film in the air can be detected using the change in capacitance. For example, a detection circuit having a function of supplying a signal that changes based on the capacitance parasitic on the conductive film can be used in the functional layer. Thereby, a finger or the like close to the conductive film in the air can be detected using the change in capacitance.

[0318] Specifically, a control signal can be supplied to the first electrode C1(i) using the control line CL(i), and the potential of the second electrode C2(j) that changes based on the supplied control signal and capacitance can be acquired using the signal line ML(j) and supplied as a detection signal. Specifically, a control signal can be supplied to the first electrode C1(i) using the control line CL(i), and the potential of the second electrode C2(j) that changes based on the supplied control signal and capacitance can be acquired using the signal line ML(j) and supplied as a detection signal. Specifically, a control signal can be supplied to the first electrode C1(i) using the control line CL(i), and the potential of the second electrode C2(j) that changes based on the supplied control signal and capacitance can be acquired using the signal line ML(j) and supplied as a detection signal.

[0319] For example, a circuit including a capacitive element to which one electrode is connected to a conductive film can be used as a detection circuit. This is possible.

[0320] The control line CL(i) includes the wiring BR(i,j). In the wiring BR(i,j), the control line CL(i) intersects the signal line ML(j) (see Fig. 11(C)). An insulating film 711 is provided between the wiring BR(i,j) and the signal line ML(j) (see Fig. 11(D)). Thereby, a short circuit between the wiring BR(i,j) and the signal line ML(j) can be prevented.

[0321] The functional panel 200TP detects a change in capacitance between, for example, a proximity or contact object and supplies a detection signal. This is possible.

[0322] Note that a film for forming a detection element may be formed on the second substrate 270, and the detection element may be manufactured using a method of processing the film. This is possible.

[0323] Alternatively, a part of the functional panel 200TP may be manufactured on another substrate, and the functional panel 200TP may be manufactured using a method of transferring the part to the substrate 610. This is possible.

[0324] 《Wiring》 The functional panel 200TP includes wiring. The wiring includes control lines CL(i), signal lines ML(j), etc. This is possible.

[0325] A material having conductivity can be used for the wiring and the like.

[0326] For example, an inorganic conductive material, an organic conductive material, a metal, or a conductive ceramic can be used for the wiring. This is possible.

[0327] Specifically, aluminum, gold, platinum, silver, chromium, tantalum, titanium, molybdenum, ta Tungsten, nickel, iron, cobalt, yttrium, zirconium, palladium or a metal element selected from manganese, an alloy containing the above-described metal element, or an alloy formed by combining the above-described metal elements can be used for wiring and the like. In particular, it is preferable to contain one or more elements selected from aluminum, chromium, copper, tantalum, titanium, molybdenum, and tungsten. In particular, an alloy of copper and manganese is suitable for microfabrication using the wet etching method.

[0328] Specifically, a two-layer structure in which a titanium film is laminated on an aluminum film, a two-layer structure in which a titanium film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a tantalum nitride film or a tungsten nitride film, a three-layer structure in which a titanium film is formed, an aluminum film is laminated on the titanium film,

[0329] and a titanium film is further formed thereon can be used. Specifically, a laminated film in which a film of an element selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium is laminated on an aluminum film can be used. Or a laminated film in which an alloy film containing a plurality of elements selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium is laminated on an aluminum film can be used. Or a laminated film in which a nitride film of an element selected from titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium

[0330] is laminated on an aluminum film can be used. Conductive oxides such as zinc oxide added with um can be used.

[0331] Alternatively, graphene or graphite can be used. The film containing graphene can be formed, for example, by reducing a film containing graphene oxide formed in a film shape. Reduction methods include methods of applying heat and methods of using a reducing agent.

[0332] Alternatively, a conductive polymer can be used.

[0333] 《Others》 The functional panel 200TP has a functional film 267p.

[0334] For example, a film containing an inorganic material, an organic material, or a composite material of an inorganic material and an organic material can be used as the functional film 267p. Specifically, a ceramic coating layer containing alumina or silicon oxide, a hard coating layer such as a UV curable resin, an antireflection film, a circular polarizing plate, etc. can be used as the functional film 2 67p.

[0335] Note that this embodiment can be appropriately combined with other embodiments shown in this specification .

[0336] (Embodiment 5) In this embodiment, the configuration of the information processing apparatus according to one aspect of the present invention will be described with reference to FIG. 14 .

[0337] FIG. 14 is a diagram for explaining an information processing apparatus according to one aspect of the present invention.

[0338] FIG. 14(A) is a projection view for explaining the state in which the input / output device K20 of the information processing apparatus K100 according to one aspect of the present invention is deployed, and FIG. 14(B) is a view taken along the cutting line X1-X2 of FIG. 14(A) . It is a cross-sectional view of the information processing apparatus K100. FIG. 14(C) is a projection view illustrating the state in which the input / output device K20 is folded.

[0339] <Configuration Example of Information Processing Apparatus> The information processing apparatus K100 described in this embodiment has an input / output device K20, an arithmetic device K10, or a housing K01(1) to a housing K01(3) (see FIG. 14).

[0340] 《Input / Output Device》 For example, the function panel described in Embodiment 4 can be used as the input / output device.

[0341] The input / output device K20 includes a display device K30 and an input device K40 (see FIG. 14(B)). The input / output device K20 is supplied with image information V and supplies detection information S.

[0342] The display device K30 is supplied with image information V, and the input device K40 supplies detection information S.

[0343] The input / output device K20 in which the input device K40 and the display device K30 are integrally overlapped is both the display device K3 0 and also the input device K40.

[0344] Note that the input / output device K20 using a touch sensor for the input device K40 and a display panel for the display device K30 is a touch panel.

[0345] The display device K30 has a region K31 in which a first region K31(11), a first foldable region K31(21), a second region K31(12), a second foldable region K31(22), and a third region K3 1(13) are arranged in a striped pattern in this order (see FIG. 14(A)).

[0346] The display device K30 has a first fold formed in the first foldable region K31(21) and​​ and a second fold formed in the second foldable region K31(22) can be folded and unfolded (see FIGS. 14(A) and 14(C)).

[0347] 《Arithmetic Unit》 The arithmetic unit K10 includes an arithmetic unit and a storage unit that stores a program to be executed by the arithmetic unit. Also, image information V is supplied and detection information S is supplied.

[0348] 《Housing》 The housing includes a housing K01(1), a hinge K02(1), a housing K01(2), a hinge K02(2 ) or a housing K01(3), and is arranged in this order of description.

[0349] The housing K01(3) houses the arithmetic unit K10. Also, the housings K01(1) to K0 1(3) hold the input / output device K20, and the input / output device K20 can be folded or unfolded (see FIG. 14(B)).

[0350] In the present embodiment, an information processing apparatus including three housings connected by two hinges is illustrated. The input / output device K20 of this information processing apparatus can be folded at the locations where there are two hinges.

[0351] Note that n (n is a natural number of 2 or more) housings may be connected using (n - 1) hinges. An information processing apparatus having this configuration can be folded by folding the input / output device K20 at (n - 1) locations.

[0352] The housing K01(1) overlaps with the first region K31(11) and includes a button K45(1).

[0353] The housing K01(2) overlaps with the second region K31(12).​​​

[0354] The housing K01(3) overlaps with the third region K31(13) and houses the arithmetic unit K10, the antenna K 10A and the battery K10B.

[0355] The hinge K02(1) overlaps with the first bendable region K31(21) and rotatably connects the housing K01(1 ) to the housing K01(2).

[0356] The hinge K02(2) overlaps with the second bendable region K31(22) and rotatably connects the housing K01(2 ) to the housing K01(3).

[0357] The antenna K10A is electrically connected to the arithmetic unit K10 and supplies or is supplied with signals .

[0358] Also, the antenna K10A is wirelessly supplied with power from an external device and supplies the power to the battery K1 0B.

[0359] The battery K10B is electrically connected to the arithmetic unit K10 and supplies or is supplied with power .

[0360] 《Folding Sensor》 The folding sensor K41 detects whether the housing is in a folded state or a deployed state and supplies information indicating the state of the housing.

[0361] The arithmetic unit K10 is supplied with information indicating the state of the housing.

[0362] When the information indicating the state of the housing K01 is information indicating a folded state, the arithmetic unit K10 supplies the image information V including the first image to the first region K31(11) (see Fig. 14(C) reference).

[0363] Also, when the information indicating the state of the housing K01 is the information indicating the deployed state, the arithmetic unit K 10 supplies the image information V to the area K31 of the display device K30 (FIG. 14(A)).

[0364] 《Detection Unit》 The detection unit K50 can detect the illuminance of the environment in which the display device K30 is used and supply detection information including information on the illuminance.

[0365] For example, a photoelectric conversion element and a detection circuit that supplies information on the illuminance of the environment based on the signal supplied by the photoelectric conversion element can be used for the detection unit K50.

[0366] Note that the present embodiment can be appropriately combined with other embodiments shown in this specification.

[0367] (Embodiment 6) In the present embodiment, the configuration of the information processing apparatus according to one aspect of the present invention will be described with reference to FIG. 15.

[0368] FIG. 15 is a diagram for explaining an information processing apparatus according to one aspect of the present invention.

[0369] FIG. 15(A) is a projection view of an information processing apparatus 3000A according to one aspect of the present invention.

[0370] FIG. 15(B) is a projection view of an information processing apparatus 3000B according to one aspect of the present invention.

[0371] FIGS. 15(C-1) and 15(C-2) are a top view and a bottom view of an information processing apparatus 3000C according to one aspect of the present invention.

[0372] 《Information Processing Apparatus A》 The information processing apparatus 3000A includes an input / output unit 3120 and a housing 3 that supports the input / output unit 3120 ​​​​​It has 101 (see Fig. 15(A)).

[0373] The input / output unit 3120 includes a function panel according to one aspect of the present invention. For example, the function panel described in Embodiment 4 can be used for the input / output unit 3120.

[0374] In addition, the information processing apparatus 3000A includes a calculation unit, a storage unit that stores a program to be executed by the calculation unit, and a power source such as a battery that supplies power to drive the calculation unit.

[0375] Note that the housing 3101 houses the calculation unit, the storage unit, the battery, etc.

[0376] The information processing apparatus 3000A can display display information on the side surface and / or the upper surface.

[0377] The user of the information processing apparatus 3000A can supply an operation command using a finger in contact with the side surface and / or the upper surface.

[0378] 《Information Processing Apparatus B》 The information processing apparatus 3000B has a housing 3101 and a housing 3101b connected to the housing 3101 by a hinge (see Fig. 15(B)).

[0379] The housing 3101 supports the input / output unit 3120.

[0380] The housing 3101b supports the input / output unit 3120b.

[0381] The input / output unit 3120 or the input / output unit 3120b includes a function panel according to one aspect of the present invention. For example, the function panel described in Embodiment 4 can be used for the input / output unit 3120.

[0382] ​​​​​In addition, the information processing apparatus 3000B includes an arithmetic unit, a storage unit that stores a program to be executed by the arithmetic unit, and a power source such as a battery that supplies power to drive the arithmetic unit. The housing 3101 houses the arithmetic unit, the storage unit, the battery, or the like.

[0383] The information processing apparatus 3000B can display information on the input / output unit 3120 or the input / output unit 3120b.

[0384] A user of the information processing apparatus 3000B can supply an operation command using a finger that touches the input / output unit 3120 or the input / output unit 3120b.

[0385]

[0386] 《Information Processing Apparatus C》 The information processing apparatus 3000C includes an input / output unit 3120 and a housing 3101 that supports the input / output unit 3120 (see FIGS. 15(C-1) and 15(C-2)).

[0387] The input / output unit 3120 includes a function panel according to an aspect of the present invention. For example, the function panel described in Embodiment 4 can be used for the input / output unit 3120.

[0388] In addition, the information processing apparatus 3000C includes an arithmetic unit, a storage unit that stores a program to be executed by the arithmetic unit, and a power source such as a battery that supplies power to drive the arithmetic unit. The housing 3101 houses the arithmetic unit, the storage unit, the battery, or the like.

[0389] Note that this embodiment can be appropriately combined with other embodiments described in this specification.

[0390]

[0391] (Embodiment 7) ​​​​​​​In this embodiment, the configuration of the information processing apparatus according to an aspect of the present invention will be described with reference to FIG. 16. Hereinafter.

[0392] FIG. 16 is a diagram for explaining an information processing apparatus according to an aspect of the present invention.

[0393] FIGS. 16(A-1) to 16(A-3) are projection views of an information processing apparatus according to an aspect of the present invention. Hereinafter.

[0394] FIGS. 16(B-1) and 16(B-2) are projection views of an information processing apparatus according to an aspect of the present invention. Hereinafter.

[0395] FIGS. 16(C-1) and 16(C-2) are top views and bottom views of an information processing apparatus according to an aspect of the present invention. Hereinafter.

[0396] 《Information Processing Apparatus A》 The information processing apparatus 4000A includes an input / output unit 4120 and a housing 4101 that supports the input / output unit 4120 (see FIGS. 16(A-1) to 16(A-3)). Hereinafter.

[0397] The input / output unit 4120 includes a function panel according to an aspect of the present invention. For example, the function panel described in Embodiment 4 can be used for the input / output unit 4120. Hereinafter.

[0398] In addition, the information processing apparatus 4000A includes a calculation unit, a storage unit that stores a program to be executed by the calculation unit, and a power source such as a battery that supplies power to drive the calculation unit. Hereinafter.

[0399] Note that the housing 4101 houses the calculation unit, the storage unit, the battery, or the like.

[0400] The information processing apparatus 4000A can display display information on the side surface and / or the upper surface. Hereinafter.

[0401] The user of the information processing apparatus 4000A can supply operation commands using fingers that contact the side surface and / or the upper surface.

[0402] "Information Processing Apparatus B" The information processing apparatus 4000B includes an input / output unit 4120 and an input / output unit 4120b (see FIGS. 16(B-1) and 16(B-2)).

[0403] Further, the information processing apparatus 4000B has a housing 4101 that supports the input / output unit 4120 and a belt-shaped housing 4101b having flexibility.

[0404] The input / output unit 4120 or the input / output unit 4120b includes a function panel according to an aspect of the present invention. For example, the function panel described in Embodiment 4 can be used for the input / output unit 4120.

[0405] Further, the information processing apparatus 4000B has a housing 4101 that supports the input / output unit 4120b.

[0406] Further, the information processing apparatus 4000B includes a power source such as a calculation unit, a storage unit that stores a program to be executed by the calculation unit, and a battery that supplies power to drive the calculation unit.

[0407] Note that the housing 4101 houses the calculation unit, the storage unit, the battery, or the like.

[0408] The information processing apparatus 4000B can display display information on the input / output unit 4120 supported by the flexible belt-shaped housing 4101b.

[0409] The user of the information processing apparatus 4000B can supply operation commands using fingers that contact the input / output unit 4120.

[0410] "Information Processing Apparatus C" The information processing apparatus 4000C includes an input / output unit 4120, and a housing 4101 and a housing 4101b that support the input / output unit 4120 (see FIGS. 16(C-1) and 16(C-2)). )

[0411] The input / output unit 4120 and the housing 4101b are flexible.

[0412] The input / output unit 4120 includes a function panel according to one aspect of the present invention. For example, the function panel described in Embodiment 4 can be used for the input / output unit 4120.

[0413] Further, the information processing apparatus 4000C includes a calculation unit, a storage unit that stores a program to be executed by the calculation unit, and a power source such as a battery that supplies power to drive the calculation unit.

[0414] Note that the housing 4101 houses the calculation unit, the storage unit, the battery, or the like.

[0415] The information processing apparatus 4000C can be folded in two at the portion of the housing 4101b.

[0416] Note that this embodiment can be appropriately combined with other embodiments shown in this specification.

[0417] For example, in this specification and the like, when it is explicitly described that X and Y are connected, it is disclosed in this specification and the like that the case where X and Y are electrically connected, the case where X and Y are functionally connected, and the case where X and Y are directly connected. Therefore, it is not limited to a predetermined connection relationship, for example, the connection relationship shown in the figure or the text, and those other than the connection relationship shown in the figure or the text are also regarded as those described in the figure or the text. ​​​​​​​​​

[0418] Here, let X and Y be objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers , etc.).

[0419] As an example of the case where X and Y are directly connected, when an element (for example, a switch, a transistor, a capacitor element, an inductor, a resistor element, a diode , a display element, a light-emitting element, a load, etc.) that enables the electrical connection between X and Y is not connected between X and Y, and X and Y are connected without an element (for example, a switch, a transistor, a capacitor element, an inductor, a resistor element, a diode, a display element, a light-emitting element, a load, etc.) that enables the electrical connection between X and Y. That is, it is a case where X and Y are connected without passing through an element (for example, a switch, a transistor, a capacitor element, an inductor, a resistor element, a diode, a display element, a light-emitting element, a load, etc.) that enables the electrical connection between X and Y.

[0420] As an example of the case where X and Y are electrically connected, one or more elements (for example, a switch, a transistor, a capacitor element, an inductor, a resistor element, a diode , a display element, a light-emitting element, a load, etc.) that enables the electrical connection between X and Y can be connected between X and Y. Note that the switch has a function of controlling on / off. That is, the switch can be in a conductive state (on state) or a non-conductive state (off state), and has a function of controlling whether to allow current to flow or not. Or, the switch has a function of selecting and switching the path through which current flows. Note that when X and Y are electrically connected, it includes the case where X and Y are directly connected. That is, it shall include the case where X and Y are directly connected.

[0421] As an example of the case where X and Y are functionally connected, a circuit (for example, a logic circuit (an inverter, a NAND circuit, a NOR circuit, etc.), a signal conversion circuit, etc.) that enables the functional connection between X and Y Conversion circuits (such as DA conversion circuits, AD conversion circuits, gamma correction circuits), potential level conversion circuits (power source circuits (such as boost circuits, buck circuits), level shifter circuits that change the potential level of signals, etc.) , voltage sources, current sources, switching circuits, amplification circuits (circuits that can increase the signal amplitude or current amount, etc., operational amplifiers, differential amplification circuits, source follower circuits, buffer circuits, etc.), signal generation circuits, memory circuits, control circuits, etc.) can be connected by one or more between X and Y. Note that, as an example, even if another circuit is sandwiched between X and Y, when the signal output from X is transmitted to Y, X and Y shall be regarded as functionally connected. Note that when X and Y are functionally connected, it includes the case where X and Y are directly connected and the case where X and Y are electrically connected.

[0422] Note that when it is explicitly described that X and Y are electrically connected, the case where X and Y are electrically connected (that is, connected with another element or another circuit sandwiched between X and Y ), the case where X and Y are functionally connected (that is, functionally connected with another circuit sandwiched between X and Y ), and the case where X and Y are directly connected (that is, connected without another element or another circuit sandwiched between X and Y ) shall be disclosed in this specification, etc. That is, when it is explicitly described as being electrically connected, it shall be disclosed in this specification, etc. that the same content as when it is only explicitly described as being connected is disclosed in this specification, etc. Note that, for example, the source (or the first terminal, etc.) of a transistor is connected via Z1 (or via ), etc.)

[0423] ​not connected), electrically connected to X, and the drain (or the second terminal, etc.) of the transistor is Z When it is electrically connected to Y via (or without) 2, or the source (or the first terminal, etc.) of the transistor is directly connected to a part of Z1, and another part of Z1 is directly connected to X connected, and the drain (or the second terminal, etc.) of the transistor is directly connected to a part of Z2 connected, and another part of Z2 is directly connected to Y, it can be expressed as follows can be done.

[0424] For example, it can be expressed as "X, Y, the source (or the first terminal, etc.) and the drain (or the second terminal, etc.) of the transistor are electrically connected to each other, and X, the source (or the first terminal, etc.) of the transistor, the drain (or the second terminal, etc.) of the transistor, and Y are electrically connected in this order." Or, it can be expressed as "The source (or the first terminal, etc.) of the transistor is electrically connected to X, the drain (or the second terminal, etc.) of the transistor is electrically connected to Y, and X, the source (or the first terminal, etc.) of the transistor, the drain (or the second terminal, etc.) of the transistor, and Y are electrically connected in this order." Or, it can be expressed as "X is electrically connected to Y via the source (or the first terminal, etc.) and the drain (or the second terminal, etc.) of the transistor, and X, the source (or the first terminal, etc.) of the transistor, the drain (or the second terminal, etc.) of the transistor, and Y are provided in this connection order." Using the same expression method as these examples, by stipulating the connection order in the circuit configuration, the source (or the first terminal, etc.) and the drain (or the second terminal, etc.) of the transistor can be distinguished ". etc.) and the drain (or the second terminal, etc.) of the transistor, and X, the source (or the first terminal, etc.) of the transistor, the drain (or the second terminal, etc.) of the transistor, and Y are electrically connected in this order." Or, it can be expressed as "X is electrically connected to Y via the source (or the first terminal, etc.) and the drain (or the second terminal, etc.) of the transistor, and X, the source (or the first terminal, etc.) of the transistor, the drain (or the second terminal, etc.) of the transistor, and Y are provided in this connection order." Using the same expression method as these examples, by stipulating the connection order in the circuit configuration, the source (or the first terminal, etc.) and the drain (or the second terminal, etc.) of the transistor can be distinguished using the same expression method as these examples, by stipulating the connection order in the circuit configuration, the source (or the first terminal, etc.) of the transistor and the drain (or the second terminal, etc.) can be distinguished from each other. Thus, the technical scope can be determined.

[0425] Or, as another expression method, for example, "the source of the transistor (or the first terminal, etc.) is electrically connected to X via at least a first connection path, and the first connection path does not have a second connection path, and the second connection path is the path between the source of the transistor (or the first terminal, etc.) and the drain of the transistor (or the second terminal, etc.) via the transistor, and the first connection path is the path via Z1, and the drain of the transistor (or the second terminal, etc.) is electrically connected to Y via at least a third connection path, and the third connection path does not have the second connection path, and the third connection path is the path via Z2." It can be expressed like this. Or, "the source of the transistor (or the first terminal, etc.) is electrically connected to X via Z1 by at least a first connection path, and the first connection path does not have a second connection path, and the second connection path has a connection path via the transistor, and the drain of the transistor (or the second terminal, etc.) is electrically connected to Y via Z2 by at least a third connection path, and the third connection path does not have the second connection path." It can be expressed like this. Or, "the source of the transistor (or the first terminal, etc.) is electrically connected to X via Z1 by at least a first electrical path, and the first electrical path does not have a second electrical path, and the second electrical path is the electrical path from the source of the transistor (or the first terminal, etc.) to the drain of the transistor (or the second terminal, etc.), and the drain of the transistor (or the second terminal, etc.) is electrically connected to Y via Z2 by at least a third electrical path, and the third electrical path does not have the second electrical path." It can be expressed like this. Or, "the source of the transistor (or the first terminal, etc.) is electrically connected to X via Z1 by at least a first electrical path, and the first electrical path does not have a second electrical path, and the second electrical path is the electrical path from the source of the transistor (or the first terminal, etc.) to the drain of the transistor (or the second terminal, etc.), and the drain of the transistor (or the second terminal, etc.) is electrically connected to Y via Z2 by at least a third electrical path, and the third electrical path does not have the second electrical path." It can be expressed like this. Or, "the source of the transistor (or the first terminal, etc.) is electrically connected to X via Z1 by at least a first electrical path, and the first electrical path does not have a second electrical path, and the second electrical path is the electrical path from the source of the transistor (or the first terminal, etc.) to the drain of the transistor (or the second terminal, etc.), and the drain of the transistor (or the second terminal, etc.) is electrically connected to Y via Z2 by at least a third is electrically connected to Y via Z2 by an electrical path, and the third electrical path does not have a fourth electrical path, and the fourth electrical path is from the drain (or the second terminal, etc.) of the transistor to the source (or the first terminal, etc.) of the transistor is an electrical path. It can be expressed as "". Using an expression method similar to these examples, by defining the connection path in the circuit configuration, the source (or the first terminal etc.) of the transistor and the drain (or the second terminal, etc.) can be distinguished to determine the technical scope.

[0426] Note that these expression methods are just examples and are not limited to these expression methods. Here, X , Y, Z1, and Z2 are assumed to be objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.).

[0427] Note that even if components that are independent on the circuit diagram are shown as being electrically connected, there may be a case where one component has the functions of a plurality of components. For example, when a part of the wiring also functions as an electrode, one conductive film has the functions of both a wiring and an electrode. Therefore, the electrical connection in this specification includes such a case where one conductive film has the functions of a plurality of components.

Explanation of Reference Numerals

[0428] BR wiring FPC2 Flexible printed circuit board K01 Housing K02 Hinge K10 Arithmetic unit K10A Antenna​​​​ K10B Battery K20 Input / Output Device K30 Display Device K31 Area K40 Input Device K41 Sensor K45 Button K50 Detection Unit K100 Information Processing Device M0 Drive Transistor 10 Processing Member 10B Processing Member 100 Film Deposition Device 100A Film Deposition Device 100B Film Deposition Device 100C Film Deposition Device 100D Film Deposition Device 110 Processing Member Support 115 Shadow Mask Support 120A Evaporation Source 120B Evaporation Source 121A Masking Plate 122A Detector 140 Power 170 Shadow Mask 180 Chamber 181a Raw Material Supply Section 181b Raw Material Supply Section 182a High-Speed Valve 182b High-Speed Valve 183a Raw Material Inlet 183b Raw Material Inlet 184 Raw Material Outlet 185 Exhaust Device 186 Processing Member Support 190 Film Deposition Chamber 195 Door Valve 196 Pipe 197 Exhaust Device 198 Detector 200 Function Panel 200(1) Function Panel 200(2) Function Panel 200(3) Function Panel 200B Function Panel 200TP Function Panel 201 Area 202 Pixels 202R Sub-Pixels 205 Bonding Layer 209 Flexible Printed Circuit Board 210 First Substrate 210a Barrier Film 210b Substrate 210c Resin Layer 211 Wiring 219 Terminals 221 Insulating Film 228 Partition Wall 250R Light-Emitting Element 267BM Light-Shielding Layer 267p Functional Film 267R Coloring Layer 270 Second Substrate 270a Barrier Film 270b Substrate 270c Resin Layer 280R Display Module 290 Insulating Layer 291 Insulating Layer 300 Function Panel 305 Bonding Layer 305a Bonding Layer 305b Bonding Layer 310 First Substrate 310a First Substrate 310b First Substrate 330 Functional Layer 330a Functional Layer 330b Functional Layer 370 Second Substrate 370a Second Substrate 370b Second Substrate 390 Insulating Layer 390a Insulating Layer 390b Insulating Layer 610 Substrate 711 Insulating Film 767 Opening 1000 Film Deposition System 1000B Film Deposition System 3000A Information Processing Device 3000B Information Processing Device 3000C Information Processing Device 3101 Housing 3101b Housing 3120 Input / Output Unit 3120b Input / Output Unit 4000A Information Processing Device 4000B Information Processing Device 4000C Information Processing Device 4101 Housing 4101b Housing 4120 Input / Output Unit 4120b Input / Output Unit

Claims

1. A pixel and a driver circuit having a function of supplying a display signal to the pixel, the pixel includes a top-gate first transistor, a capacitor, and a light-emitting element; The driving circuit is a display device having a second transistor of a top gate type, A first substrate; a terminal having a region disposed on the first substrate; a flexible printed circuit board electrically connected to the terminal; an insulating film on the first base material, the insulating film having a region disposed on a gate of the first transistor, a region disposed on the capacitive element, and a region disposed on a gate of the second transistor; a partition wall having a region disposed on the one insulating film and a region covering an end portion of a lower electrode of the light emitting element; an aluminum oxide layer having a region disposed on the partition wall and a region disposed on an upper electrode of the light emitting element; an adhesive disposed to have an area in contact with the upper surface of the aluminum oxide layer; a coloring layer having an area disposed on the adhesive and overlapping the light emitting element via the aluminum oxide layer; a second substrate having a region disposed on the color layer; a circular polarizer disposed on the second base material so as to have a region overlapping with the light-emitting element and a region overlapping with a gate of the first transistor; having a lower electrode of the light-emitting element is electrically connected to a source or a drain of the first transistor; the capacitive element is electrically connected to the first transistor; the aluminum oxide layer has a region overlapping with a gate of the first transistor, a region overlapping with the capacitance element, and a region overlapping with a gate of the second transistor; the aluminum oxide layer has a region that does not overlap with the second substrate, the aluminum oxide layer has a first region in contact with a side surface of the partition wall and a second region continuous with the first region and in contact with the first insulating film, In a plan view, the first region and the second region are disposed between the terminal and the drive circuit, The aluminum oxide layer has a thickness of 20 nm or more and 200 nm or less. Display device.

2. In claim 1, The light-emitting element is an organic EL element. Display device.

3. In claim 1 or 2, The first insulating film has a flat upper surface. Display device.

Images