Adhesive composition for semiconductor processes, semiconductor film for semiconductor processes containing the same, and method for manufacturing semiconductor package using the same

Abstract

The present invention relates to an adhesive composition for semiconductor processing that can realize a film for semiconductor processing having excellent adhesion reliability to a wafer even during a debonding process of a wafer carrier, a film for semiconductor processing including the same, and a method for manufacturing a semiconductor package using the same.

Description

Technical Field

[0001] This specification claims the benefit of the filing date of Korean Patent Application No. 10-2022-0011247, filed with the Korean Intellectual Property Office on January 26, 2022, and all of its contents are incorporated herein by reference. The present invention relates to an adhesive composition for semiconductor processes, a film for semiconductor processes including the same, and a method for manufacturing a semiconductor package using the same.

Background Art

[0002] Generally, the manufacturing process of semiconductor chips includes a process of forming a fine pattern on a wafer and a process of polishing and packaging the wafer to meet the specifications of the final device.

[0003] Recently, with the high performance of semiconductor package technology, the integration degree of semiconductors has increased, and the thickness of wafers has become ultra-thin. Therefore, in the process, a carrier is temporarily attached to the wafer for smooth handling, and a debonding process of peeling the carrier is performed after handling the wafer. The debonding process of the carrier uses a heat treatment method or a laser irradiation method. In particular, the process of debonding the carrier using an excimer laser has the advantage of being able to perform very fast processing in a selective area.

[0004] However, the output of the excimer laser is high, and most of the base materials of the films for semiconductor processes, such as PET films, PEN films, and PO films, have problems of being deformed or damaged by the excimer laser. For this reason, during the debonding process of the carrier, the base material of the film for semiconductor processes is damaged by the excimer laser, resulting in phenomena such as the film for semiconductor processes breaking or lifting off at the adhesive layer, reducing the adhesion reliability of the wafer and causing problems in the wafer processing process.

[0005] Therefore, at present, there is a need for a technology that can develop a film for semiconductor processes with excellent adhesion reliability to wafers even during the carrier debonding process using an excimer laser.

Summary of the Invention

Problems to be Solved by the Invention

[0006] The present invention provides an adhesive composition for semiconductor processes, a film for semiconductor processes containing the same, and a method for manufacturing a semiconductor package, which can realize a film for semiconductor processes with excellent adhesion reliability to wafers even during the wafer carrier debonding process. However, the problems to be solved by the present invention are not limited to the above-mentioned problems, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

Means for Solving the Problems

[0007] One embodiment of the present invention provides an adhesive composition for semiconductor processes, which includes a pressure-sensitive binder resin, a photoinitiator, and a laser absorber, wherein the laser absorber absorbs a laser having one wavelength value among the wavelengths of 250 nm to 350 nm, and the photoinitiator is activated by light having a wavelength different from that of the laser. Another embodiment of the present invention provides a film for semiconductor processes, which includes a base material and an adhesive layer containing the adhesive composition for semiconductor processes.

[0008] Furthermore, one embodiment of the present invention provides a method for manufacturing a semiconductor package, which includes the steps of preparing a wafer laminate including a wafer and a carrier provided on one surface of the wafer, attaching the adhesive layer of the film for semiconductor processes to the other surface of the wafer, irradiating the wafer laminate with a laser to peel the carrier from one surface of the wafer, processing the wafer, irradiating the adhesive layer with light to cure it, and then peeling the film for semiconductor processes from the other surface of the wafer.

Effects of the Invention

[0009] The pressure-sensitive adhesive composition for semiconductor processes according to one embodiment of the present invention can effectively absorb a laser and easily realize a pressure-sensitive adhesive layer whose adhesive force can be effectively reduced after light irradiation. The film for semiconductor processes according to one embodiment of the present invention can effectively absorb the laser irradiated during the debonding process of the wafer carrier, and the adhesive force can be effectively reduced after light irradiation, so that it can be easily peeled off from the wafer.

[0010] The method for manufacturing a semiconductor package according to one embodiment of the present invention can easily peel off the carrier using an excimer laser after processing the wafer, can effectively peel off the film for semiconductor processes by light irradiation, and can effectively improve the manufacturing efficiency of the semiconductor package. The effects of the present invention are not limited to the above-described effects, and the effects not mentioned will be clearly understood by those skilled in the art from the present specification and the attached drawings.

Brief Description of the Drawings

[0011]

Figure 1

Modes for Carrying Out the Invention

[0012] Throughout the present specification, when a part includes a certain component, this means that, unless otherwise stated, it does not exclude other components but can further include other components. Throughout the present specification, when a member is located "on" another member, this includes not only the case where a member is in contact with another member but also the case where there is still another member between the two members. Throughout the present specification, the unit "parts by weight" can mean the weight ratio between each component. Throughout the present specification, "(meth)acrylate" is used in the general sense to refer to acrylate and methacrylate. Throughout this specification, terms including ordinal numbers such as "first" and "second" are used for the purpose of distinguishing one component from other components and are not limited by the ordinal numbers. For example, within the scope of the invention, the first component may be named the second component, and similarly, the second component may be named the first component.

[0013] Hereinafter, this specification will be described in more detail. One embodiment of the present invention provides a pressure-sensitive adhesive composition for semiconductor processes, which includes a pressure-sensitive adhesive binder resin, a photoinitiator, and a laser absorber. The laser absorber absorbs a laser having one wavelength value among the wavelengths of 250 nm to 350 nm, and the photoinitiator is activated by light having a wavelength different from that of the laser.

[0014] The pressure-sensitive adhesive composition for semiconductor processes according to one embodiment of the present invention can effectively absorb a laser and easily realize a pressure-sensitive adhesive layer whose adhesive force can be effectively reduced after light irradiation.

[0015] Specifically, in the method for manufacturing a semiconductor package described below, the composition for semiconductor processes can effectively absorb an excimer laser irradiated for debonding (peeling) of a semiconductor carrier. Thereby, it is possible to effectively prevent the excimer laser from reaching the base material of the film for semiconductor processes described below. This can prevent the base material for semiconductor processes from being damaged or deformed by the excimer laser, and further improve the adhesion reliability of the film for semiconductor processes to the wafer. In addition, the composition for semiconductor processes can be cured by irradiation with light having a wavelength different from that of the laser, and the adhesive force can be effectively reduced. After debonding of the wafer carrier, the film for semiconductor processes is irradiated with light, and the adhesive force of the pressure-sensitive adhesive layer including the composition for semiconductor processes can be effectively reduced. Thereby, the film for semiconductor processes can be effectively debonded from the wafer.

[0016] According to one embodiment of the present invention, the wavelength range of the laser absorbed by the laser absorber may be 250 nm to 350 nm, 270 nm to 330 nm, 290 nm to 310 nm, or 300 nm to 320 nm. The laser may have one wavelength value within the above-described wavelength range.

[0017] According to one embodiment of the present invention, the laser absorber can absorb an excimer laser having one wavelength value within the wavelength range of 300 nm to 320 nm. Specifically, the laser absorber can absorb an excimer laser, and the wavelength range of the excimer laser absorbed by the laser absorber may be 305 nm to 315 nm, 300 nm to 320 nm, or 310 nm to 320 nm. The excimer laser having the above-described wavelength range can effectively perform the carrier debonding step from the wafer in the method for manufacturing a semiconductor package described later. As a result, the laser absorber contained in the adhesive composition for semiconductor processes can effectively absorb the excimer laser having the above-described wavelength range.

[0018] According to one embodiment of the present invention, the laser absorber can include at least one of a triazine-based compound and a cyanoacrylate-based compound. That is, the laser absorber can include at least one of a laser absorber containing a triazine-based compound and a laser absorber containing a cyanoacrylate-based compound. The laser absorber containing the above-described compound can effectively absorb the excimer laser having the above-described wavelength range. In addition, the adhesive composition for semiconductor processes containing the laser absorber has a large change in light transmittance even during heat treatment at a high temperature (for example, 240°C), and may be easily applicable to the semiconductor package manufacturing process.

[0019] On the one hand, when using a laser absorber containing a benzoate compound, a benzotriazole compound, or an oxanilide compound, it is difficult to effectively absorb the excimer laser, the light transmittance changes greatly during heat treatment at high temperature, and it may be difficult to apply to the semiconductor package manufacturing process.

[0020] According to one embodiment of the present invention, the triazine compound contained in the laser absorber may include at least one of 2-(4,6-diphenyl-1,3,5-triazin-2-yl)-5-[2-(2-ethylhexanoyloxy)ethoxy]-phenol (ADK STAB LA46, manufactured by ADEKA), 2-hydroxyphenyl-s-triazine derivative (Tinuvin1600, manufactured by BASF), 2,4-bis-[{4-(4-ethylhexyloxy)-4-hydroxy}-phenyl]-6-(4-methoxyphenyl)-1,3,5-triazine (Tinosorb S, manufactured by BASF), 2,4-bis[2-hydroxy-4-butoxyphenyl]-6-(2,4-dibutoxyphenyl)-1,3,5-triazine (TINUVIN460, manufactured by BASF), reaction product of 2-(4,6-bis(2,4-dimethylphenyl)-1,3,5-triazin-2-yl)-5-hydroxyphenyl and [(C10-C16 (mainly C12-C13) alkyloxy)methyl]oxirane (TINUVIN400, manufactured by BASF), 2-[4,6-bis(2,4-dimethylphenyl)-1,3,5-triazin-2-yl]-5-[3-(dodecyloxy)-2-hydroxypropoxy]phenol, reaction product of 2-(2,4-dihydroxyphenyl)-4,6-bis-(2,4-dimethylphenyl)-1,3,5-triazine and (2-ethylhexyl)-glycidic acid ester (TINUVIN405, manufactured by BASF), 2-(4,6-diphenyl-1,3,5-triazin-2-yl)-5-[(hexyl)oxy]-phenol (TINUVIN1577, manufactured by BASF), and 2-(2-hydroxy-4-[1-octyloxycarbonylethoxy]phenyl)-4,6-bis(4-phenylphenyl)-1,3,5-triazine (TINUVIN479, manufactured by BASF).

[0021] In addition, the cyanoacrylate compound contained in the laser absorber may include at least one of 1,3-bis-((2’-cyano-3’,3’-diphenylacryloyl)oxy) 2,2-bis-(((2’-cyano-3’,3’-diphenylacryloyl)oxy)methyl)-propane (Uvinul 3030, manufactured by BASF), alkyl-2-cyanoacrylate, cycloalkyl-2-cyanoacrylate, alkoxyalkyl-2-cyanoacrylate, alkenyl-2-cyanoacrylate, and alkynyl-2-cyanoacrylate.

[0022] According to one embodiment of the present invention, the content of the laser absorber may be 0.5 parts by weight or more and 3 parts by weight or less with respect to 100 parts by weight of the pressure-sensitive binder resin. Specifically, with respect to 100 parts by weight of the pressure-sensitive binder resin, the content of the laser absorber may be 0.7 parts by weight or more and 2.7 parts by weight or less, 0.9 parts by weight or more and 2.3 parts by weight or less, 1 part by weight or more and 2 parts by weight or less, 0.5 parts by weight or more and 1.5 parts by weight or less, or 1 part by weight or more and 2.5 parts by weight or less. When the content of the laser absorber contained in the pressure-sensitive adhesive composition for semiconductor processes is within the above-described range, the pressure-sensitive adhesive composition for semiconductor processes can effectively absorb excimer laser, the light transmittance does not change significantly even during high-temperature heat treatment, and it may be easy to apply to the semiconductor package manufacturing process.

[0023] According to an embodiment of the present invention, the pressure-sensitive adhesive composition for semiconductor processes may contain a photoinitiator. Any photoinitiator used in the art can be adopted and used without limitation as the photoinitiator. Specifically, the photoinitiator may contain at least one of benzophenone-based photoinitiators, acetophenone-based photoinitiators, ketal-based photoinitiators, and thioxanthone-based photoinitiators. As the photoinitiator, at least one of Irgacure#819 (IGM Resins), Omnirad907 (IGM Resins), HP-8 (Miwon Specialty), Irgacure#651 (BASF), Irgacure#184 (BASF), Irgacure#1173 (BASF), and CP-4 (Irgacure#184) can be used, but the types of the photoinitiator are not limited.

[0024] According to an embodiment of the present invention, based on 100 parts by weight of the pressure-sensitive binder resin, the content of the photoinitiator may be 1 part by weight or more and 5 parts by weight or less. Specifically, based on 100 parts by weight of the pressure-sensitive binder resin, the content of the photoinitiator may be 1.3 parts by weight or more and 4.5 parts by weight or less, 1.5 parts by weight or more and 4 parts by weight or less, 1.7 parts by weight or more and 3.5 parts by weight or less, 2 parts by weight or more and 3 parts by weight or less, 1 part by weight or more and 3 parts by weight or less, or 2 parts by weight or more and 4 parts by weight or less. When the content of the photoinitiator contained in the pressure-sensitive adhesive composition for semiconductor processes is within the above-described range, the adhesive force can be effectively reduced during photocuring without preventing the laser absorber from absorbing the excimer laser.

[0025] According to an embodiment of the present invention, the weight ratio of the photoinitiator to the laser absorber may be 1:0.3 to 1:1.5. Specifically, the weight ratio of the photoinitiator to the laser absorber may be 1:0.5 to 1:1.5, 1:0.5 to 1:1.3, 1:0.5 to 1:1, or 1:0.3 to 1:1. When the weight ratio of the photoinitiator to the laser absorber contained in the pressure-sensitive adhesive composition for semiconductor processes is within the above-mentioned range, the pressure-sensitive adhesive composition for semiconductor processes can effectively absorb excimer laser and, at the same time, the adhesive force can be effectively reduced after photocuring. In addition, the pressure-sensitive adhesive composition for semiconductor processes has a large change in light transmittance even during heat treatment at high temperature, and may be easily applicable to the semiconductor package manufacturing process.

[0026] According to an embodiment of the present invention, the pressure-sensitive binder resin may include a polymer of a monomer mixture containing an alkyl group-containing (meth)acrylate monomer having 1 to 10 carbon atoms and a polar group-containing (meth)acrylate monomer, and a (meth)acrylic copolymer which is a reaction product of the polymer with a (meth)acryloyl group-containing isocyanate compound.

[0027] By including the (meth)acrylic copolymer in the pressure-sensitive binder resin, the pressure-sensitive adhesive composition for semiconductor processes can achieve excellent adhesive physical properties before photocuring.

[0028] According to one embodiment of the present invention, the alkyl group-containing (meth)acrylate monomer may include at least one of methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, n-butyl (meth)acrylate, isobutyl (meth)acrylate, n-pentyl (meth)acrylate, isopentyl (meth)acrylate, n-hexyl (meth)acrylate, isohexyl (meth)acrylate, n-heptyl (meth)acrylate, isoheptyl (meth)acrylate, n-octyl (meth)acrylate, isooctyl (meth)acrylate, ethylhexyl (meth)acrylate, n-nonyl (meth)acrylate, isononyl (meth)acrylate, n-decyl (meth)acrylate, and isodecyl (meth)acrylate. When a (meth)acrylate compound containing an alkyl group having the number of carbon atoms in the above-described range is used as the first (meth)acrylate monomer, it is possible to suppress a decrease in the physical properties of the adhesive layer.

[0029] According to one embodiment of the present invention, based on 100 parts by weight of the monomer mixture, the content of the alkyl group-containing (meth)acrylate monomer may be 60 parts by weight or more and 85 parts by weight or less, 65 parts by weight or more and 82.5 parts by weight or less, 70 parts by weight or more and 80 parts by weight or less, or 72.5 parts by weight or more and 78 parts by weight or less. When the content of the alkyl group-containing (meth)acrylate monomer is within the above-described range, the adhesive composition for semiconductor processes has excellent adhesive strength and can have the physical properties required for the substrate for semiconductor processes.

[0030] According to one embodiment of the present invention, the polar group-containing (meth)acrylate monomer can contain a hydroxy group as the polar group. The polar group-containing (meth)acrylate monomer can contain at least one of 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 2-hydroxyethylene glycol (meth)acrylate, and 2-hydroxypropylene glycol (meth)acrylate. By using a (meth)acrylate monomer containing a hydroxy group, the glass transition temperature and weight average molecular weight of the (meth)acrylic copolymer can be adjusted to achieve the physical properties required for the substrate for semiconductor processes.

[0031] According to one embodiment of the present invention, with respect to 100 parts by weight of the monomer mixture, the content of the polar group-containing (meth)acrylate monomer may be 15 parts by weight or more and 40 parts by weight or less, 17.5 parts by weight or more and 35 parts by weight or less, 20 parts by weight or more and 30 parts by weight or less, or 20 parts by weight or more and 25 parts by weight or less. When the content of the polar group-containing (meth)acrylate monomer is within the above-described range, the pressure-sensitive adhesive composition for semiconductor processes has excellent adhesive strength, and the glass transition temperature and weight average molecular weight of the (meth)acrylic copolymer are adjusted to an appropriate range, so that the physical properties required for the substrate for semiconductor processes can be achieved.

[0032] According to one embodiment of the present invention, the (meth)acrylic copolymer may be a reaction product of a polymer of the monomer mixture and a (meth)acryloyl group-containing isocyanate compound. Specifically, the (meth)acrylic copolymer is formed by an addition reaction of the polymer and the (meth)acryloyl group-containing isocyanate compound. At this time, the addition reaction can mean an addition polymerization reaction, and the hydroxy group present at the terminal of the polymer reacts with the isocyanate group of the (meth)acryloyl group-containing isocyanate compound, and a urethane bond is formed in the side chain of the (meth)acrylic copolymer. By forming a urethane bond in the side chain of the (meth)acrylic copolymer, mechanical properties such as the shear strength of the adhesive layer including the adhesive composition for semiconductor processes can be improved, and the physical properties required for the substrate for semiconductor processes can be realized.

[0033] In addition, when the (meth)acryloyl group-containing isocyanate compound is introduced into the (meth)acrylic copolymer, the adhesive composition for semiconductor processes can more easily realize the physical property of absorbing excimer laser and the physical property of decreasing adhesive force after photocuring.

[0034] According to one embodiment of the present invention, the (meth)acryloyl group-containing isocyanate compound can include at least one of methacryloyloxyethyl isocyanate (MOI) and acryloyloxyethyl isocyanate (AOI).

[0035] According to one embodiment of the present invention, the content of the (meth)acryloyl group-containing isocyanate compound may be 65 mol% or more and 90 mol% or less with respect to 100 mol% of the polar group-containing (meth)acrylate monomer. Specifically, it may be 65 mol% or more and 90 mol% or less, 70 mol% or more and 90 mol% or less, 75 mol% or more and 90 mol% or less, 80 mol% or more and 90 mol% or less, or 85 mol% or more and 90 mol% or less with respect to 100 mol% of the polar group-containing (meth)acrylate monomer used in the production of the polymer. When the content of the (meth)acryloyl group-containing isocyanate compound is within the above-described range, the composition for semiconductor processes can improve mechanical properties and achieve the physical properties required for the substrate for semiconductor processes. Further, when the content of the (meth)acryloyl group-containing isocyanate compound is within the above-described range, the pressure-sensitive adhesive composition for semiconductor processes can more easily achieve the physical properties of absorbing excimer laser and reducing the adhesive force after photocuring, and the light transmittance does not change significantly even during heat treatment at a high temperature (for example, 240 °C), and it may be easily applicable to the semiconductor package manufacturing process.

[0036] According to one embodiment of the present invention, the pressure-sensitive adhesive composition for semiconductor processes may further contain a curing agent. At this time, the curing agent may be a thermosetting agent, and those used in the industry as thermosetting agents can be used without limitation. For example, an isocyanate-based curing agent can be used as the curing agent, but the type of the curing agent is not limited.

[0037] According to one embodiment of the present invention, the content of the curing agent may be 0.5 part by weight or more and 1.5 parts by weight or less with respect to 100 parts by weight of the pressure-sensitive adhesive binder resin. When the content of the curing agent is within the above-described range, the pressure-sensitive adhesive composition for semiconductor processes can effectively form an adhesive layer during heat treatment at a temperature of 100 °C or more and 150 °C or less.

[0038] According to one embodiment of the present invention, the adhesive composition for semiconductor processes may have a light transmittance of 10% or less with respect to light having a wavelength value of 310 nm. Specifically, the adhesive composition for semiconductor processes may have a light transmittance of 9% or less, 8% or less, 7% or less, 6% or less, 4% or less, 3% or less, 2% or less, 1% or less, 0.5% or less, or 0.3% or less with respect to light having a wavelength value of 310 nm. Further, the adhesive composition for semiconductor processes may have a light transmittance of 0.1% or more, 0.3% or more, 0.5% or more, 1% or more, 2% or more, or 3% or more with respect to light having a wavelength value of 310 nm. The adhesive composition for semiconductor processes having a light transmittance with respect to light having a wavelength value of 310 nm satisfying the above-described range can effectively absorb excimer laser light.

[0039] According to one embodiment of the present invention, the adhesive composition for semiconductor processes can satisfy the following Mathematical Formula 1. [Equation 1] 0 ≦ (T2 - T1) / T1 ≦ 0.4 (Mathematical Formula 1) In the above Mathematical Formula 1, T1 is the initial light transmittance (%) with respect to light having a wavelength value of 310 nm of the adhesive composition for semiconductor processes, and T2 is the light transmittance (%) with respect to light having a wavelength value of 310 nm after heat-treating the adhesive composition for semiconductor processes at 240° C. for 10 minutes. Specifically, the (T2 - T1) / T1 value of the above Mathematical Formula 1 may be 0 or more and 0.35 or less, 0 or more and 0.3 or less, 0 or more and 0.25 or less, 0 or more and 0.2 or less, 0 or more and 0.15 or less, or 0 or more and 0.1 or less. The composition for semiconductor processes satisfying the above Mathematical Formula 1 can effectively absorb excimer laser light, and the light transmittance does not change significantly even during heat treatment at a high temperature (for example, 240° C.), and may be easily applicable to the semiconductor package manufacturing process.

[0040] According to an embodiment of the present invention, the adhesive composition for semiconductor processes may have a curing degree of 50% or more during photocuring. Specifically, the adhesive composition for semiconductor processes may have a curing degree of 60% or more, or 70% or more, and may also be 90% or less, or 80% or less during photocuring. The adhesive composition for semiconductor processes that satisfies the above-mentioned range of curing degree after photocuring can be effectively cured by light irradiation, and its adhesiveness can be more easily reduced. As will be described later, the curing degree of the adhesive composition for semiconductor processes after photocuring can be calculated by using FT-IR based on the C=C (carbon-carbon double bond) peak area before and after light irradiation.

[0041] According to an embodiment of the present invention, the adhesive composition for semiconductor processes may have an adhesive force of 20 gf / in or more before photocuring. Specifically, the adhesive force of the adhesive layer including the photocured product of the adhesive composition for semiconductor processes to the wafer may be 20 gf / in or more, 40 gf / in or more, 60 gf / in or more, 70 gf / in or more, or 80 gf / in or more. Also, the adhesive force of the adhesive layer including the photocured product of the adhesive composition for semiconductor processes to the wafer may be 200 gf / in or less, 180 gf / in or less, 160 gf / in or less, 140 gf / in or less, or 120 gf / in or less. The semiconductor process film including the adhesive layer containing the adhesive composition for semiconductor processes that satisfies the above-mentioned range of adhesive force before photocuring can firmly fix the wafer during the semiconductor process, and can prevent the occurrence of chip flying phenomenon where the semiconductor chip flies and chipping phenomenon where the edge of the semiconductor chip chips.

[0042] According to one embodiment of the present invention, the adhesive composition for semiconductor processes may have an adhesive force of 30 gf / in or less after photocuring. Specifically, the adhesive force of the adhesive layer containing the photocured product of the adhesive composition for semiconductor processes with respect to the wafer may be 30 gf / in or less, 20 gf / in or less, 10 gf / in or less, 7.5 gf / in or less, 5 gf / in or less, or 3.5 gf / in or less. Further, the adhesive composition for semiconductor processes may have an adhesive force of 2 gf / in or more, 2.5 gf / in or more, 3 gf / in or more, or 4 gf / in or more after photocuring. The adhesive composition for semiconductor processes whose adhesive force satisfies the above-described range after photocuring can easily achieve the physical properties required for the semiconductor process film used in the semiconductor package manufacturing method described later.

[0043] In order to measure the adhesive force after photocuring of the adhesive composition for semiconductor processes, UV having a wavelength range of 200 nm to 400 nm can be irradiated on the adhesive composition for semiconductor processes under the conditions of 2,000 mJ to 4,000 mJ.

[0044] According to one embodiment of the present invention, the adhesive composition for semiconductor processes can satisfy the following Mathematical Formula 2. [Equation 2] 0.5 ≦ (A1 - A2) / A1 ≦ 0.99 (Mathematical Formula 2) In the above Mathematical Formula 2, A1 is the initial adhesive force (gf / in) of the adhesive composition for semiconductor processes, and A2 is the adhesive force (gf / in) of the adhesive composition for semiconductor processes after photocuring. Specifically, the value of (A1 - A2) / A1 in the above Mathematical Formula 2 may be 0.5 or more and 0.99 or less, 0.6 or more and 0.99 or less, 0.7 or more and 0.99 or less, 0.8 or more and 0.99 or less, 0.9 or more and 0.99 or less, or 0.95 or more and 0.99 or less. The semiconductor process composition that satisfies the above Mathematical Formula 2 effectively reduces the adhesive force after photocuring compared to before photocuring, and can easily achieve the physical properties required for the semiconductor process film used in the semiconductor package manufacturing method described later.

[0045] One embodiment of the present invention provides a film for semiconductor processes, including a substrate and an adhesive layer containing the above-described adhesive composition for semiconductor processes. The film for semiconductor processes according to one embodiment of the present invention can effectively absorb a laser irradiated during the debonding process of a wafer carrier, and the adhesive force can be effectively reduced after light irradiation, enabling easy peeling from the wafer.

[0046] According to one embodiment of the present invention, the film for semiconductor processes may include a release film, and the substrate, the adhesive layer, and the release film may be laminated in this order. The release film can serve to protect the adhesive layer of the film for semiconductor processes. The release film is peeled off before the adhesive layer is attached to the surface of the wafer.

[0047] According to one embodiment of the present invention, the adhesive layer can contain the adhesive composition for semiconductor processes according to the above-described embodiment. Specifically, the adhesive layer can contain a thermoset (or dried product) of the adhesive composition for semiconductor processes. That is, after applying the liquid adhesive composition for semiconductor processes onto the substrate, heat treatment can be performed at a temperature of 100°C or higher and 150°C or lower for 3 to 10 minutes to form a film-like adhesive layer.

[0048] According to one embodiment of the present invention, the thickness of the adhesive layer may be 25 μm or more. Specifically, the thickness of the adhesive layer may be 25 μm or more and 50 μm or less, 27 μm or more and 48 μm or less, 30 μm or more and 45 μm or less, 30 μm or more and 42 μm or less, 30 μm or more and 40 μm or less, or 25 μm or more and 35 μm or less. When the thickness of the adhesive layer is within the above-described range, the film for semiconductor processes can be stably adhered to a semiconductor wafer, and excellent adhesion reliability can be realized during the processing process of the wafer. According to one embodiment of the present invention, the base material may be a polyethylene terephthalate film, a polyolefin film, a PEN ((polyethylenemaphthatlate) film, an ethylene-vinyl acetate film, a polybutylene terephthalate film, a polypropylene film or a polyethylene film, but the type of the base material is not limited.

[0049] According to one embodiment of the present invention, the thickness of the base material may be 10 μm or more and 100 μm or less. Specifically, the thickness of the base material may be 20 μm or more and 80 μm or less, 40 μm or more and 60 μm or less, 10 μm or more and 70 μm or less, 15 μm or more and 65 μm or less, 25 μm or more and 62.5 μm or less, 30 μm or more and 57 μm or less, 35 μm or more and 55 μm or less, 45 μm or more and 50 μm or less, 40 μm or more and 100 μm or less, 42.5 μm or more and 75 μm or less, 45 μm or more and 72.5 μm or less, or 50 μm or more and 65 μm or less. When the thickness of the base material is within the above-mentioned range, the semiconductor process film excellent in mechanical properties can be realized.

[0050] One embodiment of the present invention provides a method for manufacturing a semiconductor package, including the steps of preparing a wafer laminate including a wafer and a carrier provided on one surface of the wafer, attaching an adhesive layer of the semiconductor process film to the other surface of the wafer, irradiating the wafer laminate with a laser to peel the carrier from one surface of the wafer, processing the wafer, and peeling the semiconductor process film from the other surface of the wafer after irradiating the adhesive layer with light to cure it.

[0051] The method for manufacturing a semiconductor package according to one embodiment of the present invention can easily peel the carrier using an excimer laser after processing the wafer, can effectively peel the semiconductor process film by light irradiation, and can effectively improve the manufacturing efficiency of the semiconductor package.

[0052] According to an embodiment of the present invention, the wafer may be an unprocessed silicon wafer itself or a pre-processed wafer. For example, the pre-processed wafer may be a device wafer provided with a functional coating on the surface of the wafer or on which wirings, bumps, etc. are formed. However, the type of the wafer is not limited, and wafers used in the art can be applied without limitation.

[0053] FIG. 1 is a diagram schematically showing a method for manufacturing a semiconductor package according to an embodiment of the present invention. Referring to FIG. 1(a), a carrier 10 can be provided on one surface of a wafer W to prepare a wafer laminate. At this time, the carrier may be a wafer carrier, and those used as wafer carriers in the art can be used without limitation. For example, glass, silicon, silicon nitride, or quartz can be used as the carrier.

[0054] Referring to FIG. 1(b), lamination can be performed such that the adhesive layer 22 of the semiconductor process film according to the above-described embodiment adheres to the other surface of the wafer W. Thereafter, a laser L can be irradiated in a direction from the carrier 10 toward the base material 21 of the semiconductor process film. At this time, the laser may be the above-described excimer laser. On the other hand, as described above, the adhesive layer containing the semiconductor process adhesive composition contains a laser absorber, so that the laser can be absorbed, and the laser can be effectively prevented from reaching the base material. Thereby, it is possible to effectively suppress deformation or damage of the base material in the debonding (peeling) process of the carrier, and effectively maintain excellent adhesion reliability of the semiconductor process film to the wafer.

[0055] Referring to FIG. 1(c), after irradiating the laser L, the carrier 10 can be peeled off (debonded) from one surface of the wafer W. Thereafter, the semiconductor wafer can be processed by a method generally used in the art. After the processing of the semiconductor wafer is completed, light can be irradiated in the direction from the substrate toward the wafer. At this time, the light is ultraviolet (UV) having a wavelength range of 200 nm to 400 nm and is irradiated under the conditions of 2,000 mJ to 4,000 mJ. By irradiating the light, the adhesive layer is photocured and the adhesive force can be significantly reduced.

[0056] Referring to FIG. 1(d), the adhesive layer 22 with reduced adhesive force can be peeled off (debonded) from the other surface of the wafer W to obtain a processed semiconductor wafer.

[0057] Hereinafter, in order to specifically describe the present invention, examples will be given and described in detail. However, the examples according to the present invention can be deformed into various different forms, and the scope of the present invention is not construed as being limited to the examples described below. The examples in this specification are provided to more completely explain the present invention to those having average knowledge in the art.

Example

[0058] Hereinafter, in order to specifically describe the present invention, examples will be given and described in detail. Example 1 Manufacture of Adhesive Binder Resin A reactor equipped with a cooling device to allow nitrogen gas to reflux and facilitate temperature adjustment was charged with a monomer mixture consisting of 76.35 g of 2-ethylhexyl acrylate (2-EHA) and 23.65 g of hydroxyethyl acrylate (HEA). Next, based on 100 g of the monomer mixture, 200 g of ethyl acetate (EAc) as a solvent was added, and while injecting nitrogen to remove oxygen from the reactor, it was thoroughly mixed at 30 °C for 30 minutes or more. Thereafter, the temperature was maintained at 65 °C, 0.1 g of V-60 (Azobisisbutylonitrile) as a polymerization initiator was added in portions to start the reaction, and then polymerized for 6 hours to produce a primary reaction product (polymer).

[0059] To the primary reaction product, 26.88 g of 2-methacryloyloxyethyl isocyanate (MOI) (85 mol% based on HEA in the primary reaction product) and 0.27 g of a catalyst (DBTDL: dibutyl tin dilaurate) were added, and reacted at 40 °C for 24 hours to introduce an ultraviolet-curing group into the polymer side chain in the primary reaction product to produce a (meth)acrylate copolymer (adhesive binder resin) having a photopolymerizable side chain. At this time, the weight average molecular weight of the produced (meth)acrylate copolymer (adhesive binder resin) was about 700,000 g / mol.

[0060] Manufacture of an Adhesive Composition for Semiconductor Processes Irgacure819 (IGM Resins) was prepared as a photoinitiator, 2-(4,6-diphenyl-1,3,5-triazin-2-yl)-5-[2-(2-ethylhexanoyloxy)ethoxy]-phenol (LA46, manufactured by ADEKA), a triazine-based compound, was prepared as a laser absorber, and AK-75, an isocyanate-based curing agent, was prepared as a curing agent. Thereafter, 2 parts by weight of a photoinitiator, 1 part by weight of a laser absorber, and 0.95 part by weight of a curing agent were mixed with 100 parts by weight of the produced (meth)acrylate copolymer to produce an adhesive composition for semiconductor processes.

[0061] Manufacture of a Film for Semiconductor Processes The manufactured pressure-sensitive adhesive composition for semiconductor processes was diluted with methyl ethyl ketone (MEK) as a solvent so as to have a viscosity suitable for coating (about 1,000 cp), and mixed for 15 minutes using a stirrer. The pressure-sensitive adhesive composition for semiconductor processes was left at room temperature to remove the bubbles generated during mixing, and then coated on a polyethylene terephthalate film (thickness: 38 μm) subjected to a release treatment using an applicator. After that, it was dried at 110°C for 4 minutes using a mathis oven to form a pressure-sensitive adhesive layer with a thickness of about 30 μm. Thereafter, the pressure-sensitive adhesive layer was laminated on the corona-treated surface of a PEN film (Q65H, manufactured by Toyob) with a thickness of 50 μm corona-treated on one side as a base material, and aged at 40°C for 3 days to manufacture a film for semiconductor processes.

[0062] Example 2 The (meth)acrylate copolymer (pressure-sensitive adhesive binder resin) manufactured in Example 1 was prepared. Thereafter, a pressure-sensitive adhesive composition for semiconductor processes and a film for semiconductor processes were manufactured in the same manner as in Example 1, except that Tinuvin 1600 (manufactured by BASF), which is a triazine-based compound, was used as a laser absorber.

[0063] Example 3 The (meth)acrylate copolymer (pressure-sensitive adhesive binder resin) manufactured in Example 1 was prepared. Thereafter, a pressure-sensitive adhesive composition for semiconductor processes and a film for semiconductor processes were manufactured in the same manner as in Example 1, except that Uvinul 3030 (manufactured by BASF), which is a cyanoacrylate-based compound, was used as a laser absorber.

[0064] Example 4 In Example 3, a pressure-sensitive adhesive composition for semiconductor processes and a film for semiconductor processes were manufactured in the same manner as in Example 3, except that the content of the laser absorber was adjusted to 2 parts by weight with respect to 100 parts by weight of the pressure-sensitive adhesive binder resin.

[0065] Example 5 In Example 3 above, a semiconductor process adhesive composition and a semiconductor process film were produced in the same manner as in Example 3, except that Omnirad 907 (IGM Resins) was used as the photoinitiator and a 50-μm-thick PET film (TOR50, SKC) was used as the substrate.

[0066]

Table 1

[0067] Comparative Example 1 In Example 1 above, a semiconductor process adhesive composition and a semiconductor process film were produced in the same manner as in Example 1, except that no laser absorber was used during the production of the semiconductor process adhesive composition.

[0068] Comparative Example 2 A semiconductor process adhesive composition and a semiconductor process film were produced in the same manner as in Example 1, except that SONGSORB UV-1 (Sunwon Industry Co., Ltd.), a benzoate-based compound, was used as the laser absorber.

[0069] Comparative Example 3 A semiconductor process adhesive composition and a semiconductor process film were produced in the same manner as in Example 1, except that SONGSORB CS928 (Sunwon Industry Co., Ltd.), a benzotriazole-based compound, was used as the laser absorber.

[0070] Comparative Example 4 A semiconductor process adhesive composition and a semiconductor process film were produced in the same manner as in Example 1, except that SONGSORB CS312 (manufactured by Sunwon Industry Co., Ltd.), an oxanilide-based compound, was used as the laser absorber.

[0071]

Table 2

[0072] In Example 1, a semiconductor process adhesive composition and a semiconductor process film were produced in the same manner as in Example 1, except that no laser absorber was used during the production of the semiconductor process adhesive composition.

[0073] Experimental Example Measurement of Light Transmittance The light transmittance of the adhesive layers themselves produced in Examples 1 to 5 and Comparative Examples 1 to 4 was measured as follows. An adhesive layer produced using the semiconductor process adhesive composition produced in Example 1 was separately bonded to LCD Bare glass (0.5 mm thick) to prepare a sample with a size of 50 mm × 50 mm. Subsequently, using Shimadzu-UV2500, the light transmittance in the wavelength range of 200 nm to 800 nm was measured, and then the light transmittance value at 310 nm was confirmed.

[0074] On the other hand, the produced sample was placed in an oven and stored at 240°C for 10 minutes. Then, using Shimadzu-UV2500, the light transmittance in the wavelength range of 200 nm to 800 nm was measured, and then the light transmittance value at 310 nm was confirmed. Also, the light transmittance of the pressure-sensitive adhesive layers produced in Examples 2 to 5 and Comparative Examples 1 to 4 was measured in the same manner. The light transmittance before heat treatment, the light transmittance after heat treatment, and the change rate of the light transmittance calculated by the above formula (1) are shown in Table 3 below.

[0075] Measurement of degree of curing The degree of curing of the pressure-sensitive adhesive layers produced in Examples 1 to 5 and Comparative Examples 1 to 4 was measured as follows.

[0076] A semiconductor process film provided with a pressure-sensitive adhesive layer produced using the pressure-sensitive adhesive composition for semiconductor processes produced in Example 1 was prepared. Thereafter, after irradiating 3,000 mJ of UV (about 350 nm to 400 nm) in the direction from the base material of the semiconductor process film toward the pressure-sensitive adhesive layer, the degree of curing was measured by a method of calculating the peak change of IR.

[0077] Specifically, it was measured in the FT-IR ATR mode, the C=C peak area at 814 nm before and after UV irradiation was confirmed, and the degree of curing (%) was calculated by the following formula (3). [Equation 3] Degree of curing (%) = (1 - ((C=C peak area at 814 nm after UV irradiation) / (C=C peak area at 814 nm before UV irradiation))) × 100 (Equation 3)

[0078] Also, the degree of curing of the pressure-sensitive adhesive layers produced in Examples 2 to 5 and Comparative Examples 1 to 4 was measured in the same manner, and the results are shown in Table 3 below.

[0079] Measurement of adhesive force The adhesive force of the pressure-sensitive adhesive layers produced in Examples 1 to 5 and Comparative Examples 1 to 4 with respect to the wafers was measured as follows.

[0080] A semiconductor process film provided with an adhesive layer manufactured using the adhesive composition for semiconductor processes manufactured in Example 1 was prepared. Thereafter, after cutting the semiconductor process film into a size of 1 inch × 25 cm, the adhesive layer was bonded to a wafer and left at room temperature for 1 day. Thereafter, using TA (texture analyze), the semiconductor process film was peeled from the wafer at a speed of 0.3 mpm and a peeling angle of 180° to measure the peeling force (adhesive force).

[0081] On the other hand, with respect to the other prepared sample, UV (about 350 nm to 400 nm) of 3,000 mJ was irradiated in the direction from the base material of the semiconductor process film toward the adhesive layer. Thereafter, the peeling force (adhesive force) was measured by the same method as described above.

[0082] Also, with respect to the adhesive layers manufactured in Examples 2 to 5 and Comparative Examples 1 to 4, the peeling force (adhesive force) was measured by the same method.

[0083] The peeling force (adhesive force) before UV irradiation, the peeling force (adhesive force) after UV irradiation, and the change rate of the peeling force (adhesive force) calculated by the above formula 2 are shown in Table 3 below.

[0084] Appearance evaluation After irradiating the semiconductor process films manufactured in Examples 1 to 5 and Comparative Examples 1 to 4 with an excimer laser, the appearance evaluation was carried out. A semiconductor process film provided with an adhesive layer manufactured using the adhesive composition for semiconductor processes manufactured in Example 1 was prepared. Thereafter, an excimer laser having a wavelength value of 308 nm was irradiated in the direction from the adhesive layer of the semiconductor process film toward the base material. Thereafter, if there were bubbles, fumes generated, lifting, etc. at the interface between the base material and the adhesive layer of the semiconductor process film, it was evaluated as "X", and if not, it was evaluated as "O".

[0085] Also, the appearance evaluation was carried out for the semiconductor process films manufactured in Examples 2 to 5 and Comparative Examples 1 to 4, and the results are shown in Table 3 below.

[0086]

Table 3

[0087] Referring to Table 3 above, by using the pressure-sensitive adhesive compositions for semiconductor processes manufactured in Examples 1 to 5 of the present invention, although the initial light transmittance at 310 nm is low, the change rate of the light transmittance after heat treatment is low, and although it has excellent adhesive force before UV curing, it can be seen that an adhesive layer can be provided in which the adhesive force effectively decreases after UV curing. Further, in the case of a semiconductor process film provided with an adhesive layer manufactured using the pressure-sensitive adhesive compositions for semiconductor processes manufactured in Examples 1 to 5, it can be seen that the appearance evaluation results after excimer laser irradiation are excellent.

Explanation of Reference Signs

[0088] W: Wafer 10: Carrier 21: Substrate 22: Adhesive layer L: Laser

Claims

1. An adhesive binder resin; a photoinitiator; and a laser absorber; comprising, The laser absorber absorbs a laser having one wavelength value among wavelengths of 250 nm to 350 nm, The photoinitiator is an adhesive composition for semiconductor processes activated by light having a wavelength different from that of the laser, Satisfies the following formula 1: [Formula 1] 0 ≦ (T2 - T1) / T1 ≦ 0.4 (Formula 1) In the above formula 1, T1 is the initial light transmittance (%) with respect to light having a wavelength value of 310 nm of the adhesive composition for semiconductor processes, T2 is the light transmittance (%) with respect to light having a wavelength value of 310 nm after heat-treating the adhesive composition for semiconductor processes at 240 °C for 10 minutes, the adhesive composition for semiconductor processes.

2. The laser absorber according to claim 1, which absorbs an excimer laser having one wavelength value among wavelengths of 300 nm to 320 nm.

3. The laser absorber Contains at least one of a triazine-based compound and a cyanoacrylate-based compound, the adhesive composition for semiconductor processes according to claim 1.

4. The weight ratio of the photoinitiator to the laser absorber is 1:0.3 to 1:1.5, the adhesive composition for semiconductor processes according to claim 1.

5. Based on 100 parts by weight of the adhesive binder resin, the content of the laser absorber is 0.5 part by weight or more and 3 parts by weight or less, the adhesive composition for semiconductor processes according to claim 1.

6. Based on 100 parts by weight of the adhesive binder resin, the content of the photoinitiator is 1 part by weight or more and 5 parts by weight or less, the adhesive composition for semiconductor processes according to claim 1.

7. The adhesive binder resin Is a reaction product of a polymer of a monomer mixture containing an alkyl group-containing (meth)acrylate monomer having 1 to 10 carbon atoms and a polar group-containing (meth)acrylate monomer and a (meth)acryloyl group-containing isocyanate compound, and contains a (meth)acrylic copolymer, the adhesive composition for semiconductor processes according to claim 1.

8. Based on 100 parts by weight of the monomer mixture, the content of the alkyl group-containing (meth)acrylate monomer having 1 to 10 carbon atoms is 60 parts by weight or more and 85 parts by weight or less, the adhesive composition for semiconductor processes according to claim 7.

9. The semiconductor process adhesive composition according to claim 7, wherein the content of the polar group-containing (meth)acrylate monomer is 15 parts by weight or more and 40 parts by weight or less with respect to 100 parts by weight of the monomer mixture.

10. The semiconductor process adhesive composition according to claim 7, wherein the content of the (meth)acryloyl group-containing isocyanate compound is 65 mol% or more and 90 mol% or less with respect to 100 mol% of the polar group-containing (meth)acrylate monomer.

11. Further comprising a curing agent, The semiconductor process adhesive composition according to claim 1, wherein the content of the curing agent is 0.5 part by weight or more and 1.5 parts by weight or less with respect to 100 parts by weight of the pressure-sensitive binder resin.

12. The semiconductor process adhesive composition according to claim 1, wherein the light transmittance with respect to light having a wavelength value of 310 nm is 10% or less.

13. The semiconductor process adhesive composition according to claim 1, wherein the degree of curing is 50% or more during photocuring.

14. The semiconductor process adhesive composition according to claim 1, wherein the adhesive force after photocuring is 30 gf / in or less.

15. The semiconductor process adhesive composition according to claim 1, which satisfies the following Mathematical Formula 2: [Mathematical Formula 2] 0.5 ≦ (A1 - A2) / A1 ≦ 0.99 (Mathematical Formula 2) In the above Mathematical Formula 2, A1 is the initial adhesive force (gf / in) of the semiconductor process adhesive composition, A2 is the adhesive force (gf / in) of the semiconductor process adhesive composition after photocuring.

16. The semiconductor process adhesive composition according to claim 1, wherein the adhesive force before photocuring is 20 gf / in or more.

17. A substrate, A semiconductor process film comprising an adhesive layer containing the semiconductor process adhesive composition according to claim 1.

18. Including a release film, The semiconductor process film according to claim 17, wherein the substrate, the adhesive layer, and the release film are laminated in this order.

19. Preparing a wafer laminate including a wafer and a carrier provided on one surface of the wafer; Attaching the adhesive layer of the semiconductor process film according to claim 17 to the other surface of the wafer; Irradiating the wafer laminate with a laser to peel the carrier from one surface of the wafer; Processing the wafer; A method for manufacturing a semiconductor package, comprising peeling the semiconductor process film from the other surface of the wafer after irradiating the adhesive layer with light for curing.

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