Bonded body, semiconductor device, method for manufacturing bonded body, and method for manufacturing semiconductor device

Abstract

One aspect of the bonded body of the present disclosure includes a metal member and a resin member bonded to the metal member. The bonding surface of the metal member has a concave portion and a convex portion, and a primer layer is formed on the convex portion, and the primer layer in the concave portion is less than that on the convex portion.

Description

Technical Field

[0001] The present disclosure relates to a bonded body, a semiconductor device, a method for manufacturing a bonded body, and a method for manufacturing a semiconductor device.

Background Art

[0002] Techniques for bonding metal members and resin members such as adhesion and resin encapsulation are utilized in various products. Since the adhesive strength of the bonded body greatly affects the reliability of the product, it is important to improve the adhesive strength. Conventionally, as a technique for improving the adhesive strength in a bonded body, for example, there is Patent Document 1.

[0003] Patent Document 1 discloses a bonding technique in which a concave portion on the order of micrometers is provided on the metal surface to be bonded to the polymer material by laser treatment, the inner wall of the concave portion has protrusions, and pores or concave portions on the order of nanometers are formed on the surface of the protrusions, thereby improving the adhesive strength in the bonded body by the anchor effect and the effect of covalent bonds.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] However, in the method described in Patent Document 1, although the adhesive strength is improved in the concave portion due to the anchor effect, there is no such effect in the convex portion, so there is a problem that sufficient adhesion reliability cannot be obtained.

[0006] The present disclosure has been made in view of the above problems, and one of its objects is to provide a bonded body that can obtain sufficient adhesion reliability. Another object is to provide a semiconductor device including such a bonded body, a method for manufacturing a bonded body, and a method for manufacturing a semiconductor device.

Means for Solving the Problem

[0007] One aspect of the bonded body of the present disclosure includes a metal member and a resin member bonded to the metal member. The bonding surface of the metal member has recesses and protrusions, a primer layer is formed on the protrusions, and the primer layer in the recesses is less than that on the protrusions.

[0008] One aspect of the semiconductor device of the present disclosure is that at least a part of the bonded body of the surface electrode, wire, conductive layer or electrode terminal and the resin member is the above-mentioned bonded body.

[0009] One aspect of the method for manufacturing the bonded body of the present disclosure includes a step of applying a primer to a metal member to form a primer layer, a step of performing laser treatment on the primer layer to form recesses and protrusions on the bonding surface of the metal member, and a step of, after forming the recesses and the protrusions, bonding and sealing with a resin member to form a bonded body.

[0010] One aspect of the method for manufacturing a semiconductor device of the present disclosure is to bond at least a part of the bonded body of the surface electrode, wire, conductive layer or electrode terminal and the resin member by the above-mentioned method for manufacturing the bonded body.

Advantages of the Invention

[0011] According to the bonded body, semiconductor device, method for manufacturing the bonded body, and method for manufacturing the semiconductor device of the present disclosure, sufficient adhesion reliability can be obtained.

Brief Description of the Drawings

[0012]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Embodiments for Carrying Out the Invention

[0013] Hereinafter, embodiments to which the present disclosure is applied will be described in detail with reference to the drawings. Note that the drawings used in the following description are for explaining the configuration of the embodiments of the present disclosure, and the sizes, thicknesses, dimensions, etc. of each part shown in the drawings may be different from the dimensional relationships of an actual toothbrush.

[0014] (Embodiment 1) [Bonded body] FIG. 1 is a cross-sectional view of a bonded body 100 in Embodiment 1. In FIG. 1, the bonded body 100 has a configuration in which a metal member 101 and a resin member 102 are bonded. The metal member 101 includes a concave portion 103 and a convex portion 104 on a bonding surface 106 facing the resin member 102. A plurality of (four in FIG. 1 as an example) concave portions 103 are arranged at intervals along the bonding surface 106. The convex portion 104 is provided between adjacent concave portions 103. Therefore, the concave portions 103 and the convex portions 104 are alternately provided along the bonding surface 106.

[0015] A primer layer 105 is formed on the convex portion 104. The primer layer 105 is formed so as to cover the convex portion 104. A primer layer 105 is also formed on the inner surface of the concave portion 103. The amount of the primer layer 105 formed in the concave portion 103 is less than that of the primer layer 105 formed on the convex portion 104.

[0016] The metal member 101 is not particularly limited as long as it is made of metal. The metal member 101 is, for example, a pure metal such as Al, Cu, or Fe, or an alloy containing at least one of Al, Cu, Fe, Ni, Au, Pd, and Ag as a main component.

[0017] The resin member 102 is not particularly limited, and examples thereof include epoxy resin, acrylic resin, modified silicone resin, silicone resin, nylon resin, urethane resin, polypropylene resin, polyethylene resin, polystyrene, polyether ketone resin, polyether ether ketone resin, vinyl chloride resin, ABS resin, amide resin, polycarbonate resin, polyimide resin, phenol resin, melamine resin, urea resin, polyacetal resin, or polyphenylene sulfide resin, etc.

[0018] The material for forming the primer layer 105 is not particularly limited, but compositions containing epoxy resin, acrylic resin, urethane resin, cyanoacrylate-based, silane coupling agent-based, synthetic rubber-based, amine-based, carboxyl-based, polyrotaxane-based, etc., which are generally used as primers, and other known primers can be used. In particular, it is preferably contained polyrotaxane.

[0019] A polyrotaxane is a compound having a composite molecular structure composed of an axial molecule and a plurality of cyclic molecules that encapsulate the axial molecule. Since the cyclic molecules can move freely, stress relaxation occurs and the adhesion of the joined body is improved. Examples of the polymer that forms the chain portion of the axial molecule include polyvinyl alcohol, polyvinyl pyrrolidone, cellulose-based resins, polyacrylamide, polyethylene oxide, polyether-based resins, polyvinyl acetal, polyvinyl methyl ether, polyamine, polyethyleneimine, polyacrylonitrile, polyoxazoline, casein, gelatin, starch, olefin-based resins, polyester-based resins, polyvinyl chloride, styrene-based resins, acrylic-based resins, polycarbonate, polyurethane, polyvinyl butyral, polyisobutylene, ABS resins, polyamide resins, polyimide resins, polysiloxane-based resins, polycarbonate resins, polysulfone resins, and the like. These polymers may be random copolymers or block copolymers as appropriate, and may also be modified. Furthermore, the bulky groups formed at both ends of the chain portion are not particularly limited as long as they are groups that prevent the cyclic molecules from detaching from the axial molecule. From the viewpoint of bulkiness, examples thereof include an adamantyl group, a trityl group, a fluoresceinyl group, a dinitrophenyl group, and a pyrenyl group. The cyclic molecule may have a ring of a size capable of encapsulating the axial molecule as described above. Examples of such a ring include a cyclodextrin ring, a crown ether ring, a benzo crown ring, a dibenzo crown ring, and a dicyclohexano crown ring.

[0020] It is desirable that the polyrotaxane has a carboxylic acid group or an aldehyde group or both as functional groups. Since carboxylic acids and aldehyde groups have high reactivity, strong interaction with the metal member 101 and the resin member 102 can be expected, and the adhesion is improved.

[0021] The depth of the recess 103 is desirably in the range of 1 μm or more and 1000 μm or less. When the depth of the recess 103 is less than 1 μm, a sufficient anchor effect is not exhibited, and the effect of improving the adhesion is poor. When the depth of the recess 103 exceeds 1000 μm, it is difficult for the resin member 102 to enter the recess 103, and sufficient adhesion cannot be obtained. By setting the depth of the recess 103 in the range of 1 μm or more and 1000 μm or less, a sufficient anchor effect and sufficient adhesion with the resin member 102 can be obtained.

[0022] Assuming that the area of the convex portion 104 is X and the area of the concave portion 103 is Y, the value of the area ratio of the convex portion 104 to the concave portion 103 represented by X / Y is desirably in the range of 0.001 or more and 5 or less. When the value represented by X / Y is less than 0.001, the area of the primer layer 105 is small and sufficient adhesion cannot be obtained. When the value represented by X / Y is greater than 5, a sufficient anchor effect cannot be obtained, so sufficient adhesion cannot be obtained. By setting the value represented by X / Y in the range of 0.001 or more and 5 or less, sufficient adhesion and anchor effect can be obtained.

[0023] [Method for manufacturing a bonded body] Next, a method for manufacturing the bonded body 100 according to Embodiment 1 will be described with reference to FIGS. 2 to 4. FIG. 2 is a process diagram related to the method for manufacturing the bonded body 100.

[0024] As shown in FIG. 2, the method for manufacturing the bonded body 100 includes forming a primer layer 105 on the metal member 101 (step S1), forming a recess 103 and a convex portion 104 on the bonding surface 106 of the metal member 101 (step S2), and bonding and sealing the resin member 102 to the metal member 101 (step S3). Details will be described below.

[0025] FIGS. 3 and 4 are cross-sectional views along the method for manufacturing the bonded body according to Embodiment 1. First, as shown in FIG. 3, in step S1, a primer is applied to the bonding surface 106 of the metal member 101 to form a primer layer 105.

[0026] The method of applying the primer may be any method, and examples include brushing, spray coating, spin coating, etc. The primer may be diluted with a volatile solvent, and examples of the diluting solvent include acetone, methyl ethyl ketone, toluene, cyclohexane, ethanol, methanol, propanol, 2-butanone, etc. Surface treatment may be performed on the metal member 101 before applying the primer. Examples of the type of surface treatment of the metal member 101 include solvent degreasing, water washing degreasing, polishing treatment, ultraviolet treatment, corona treatment, flame treatment, etc.

[0027] Next, as shown in FIG. 4, in step S2, by irradiating the surface of the metal member 101 with the laser L, the concave portion 103 and the convex portion 104 are formed on the joint surface 106 of the metal member 101. In the portion where the laser L is not irradiated, due to the thermal influence of the laser L, the primer layer 105 is heated, and the metal member 101 and the primer layer 105 are firmly adhered. In the portion where the laser L is irradiated, the metal member 101 is melted or evaporated by ablation, and the concave portion 103 is formed. At this time, since a part of the primer layer 105 also evaporates, the primer layer in the concave portion 103 becomes less than the primer layer 105 in the convex portion 104.

[0028] The laser L is preferably a pulse laser in order to avoid deformation of the metal member 101. Also, the wavelength of the pulse laser is not particularly limited, but as an example of a wavelength suitable for metal processing, a wavelength of 200 nm or more and 10000 nm or less is preferable, and further, a wavelength of 400 nm or more and 2000 nm or less is more preferable. Also, if necessary, the laser L may be irradiated in a gas atmosphere such as N2, Ar, or He.

[0029] The area ratio (X / Y) of the area X of the convex portion 104 and the area Y of the concave portion 103, and the depth of the concave portion 103 can be controlled by changing the energy of the pulse laser, the number of scanning times, and the interval between the spots of the laser L.

[0030] Next, as shown in FIG. 1, in step S3, the resin member 102 is joined and sealed to the metal member 101. Thereby, a joined body 100 in which the metal member 101 having the primer layer 105 and the resin member 102 are joined is obtained.

[0031] Note that the primer layer 105 formed in the recess 103 is not essential, and a configuration may be adopted in which the primer layer 105 is not formed in the recess 103 by irradiation with the laser L.

[0032] [Example of Embodiment 1] Hereinafter, the effects of the present disclosure will be made clearer by way of examples. Note that the present disclosure is not limited to the following examples, and can be implemented with appropriate modifications without changing the gist thereof.

[0033] (Examples 1-168, Comparative Example 1) In this example of the joined body of Embodiment 1, a shear tensile test in accordance with JIS K 6850 was performed on the samples of Examples 1-168 and Comparative Example 1 having the specifications shown in Tables 1-4.

[0034] As the primer in the samples of Examples 1-42, 3-aminopropyltrimethoxysilane, which is a silane coupling agent, was used. As the primer in the samples of Examples 43-84, a solution in which SH2400P (hydroxyl group) manufactured by Advanced Soft Materials Co., Ltd., which is a polyrotaxane, was dissolved in 10% acetone was used. As the primer in the samples of Examples 85-126, the SH2400P of Examples 43-84 was modified to a carboxylic acid group by oxidizing the hydroxyl group of the functional group. As the primer in the samples of Examples 127-168, the SH2400P of Examples 43-84 was modified to an aldehyde group by oxidizing the hydroxyl group of the functional group.

[0035] As the resin member 102, two-component epoxy adhesive EH456 manufactured by Mitsui Chemicals, Inc. was used, and as the metal member 101, A5052 material was used. After washing the A5052 material with acetone, it was coated with a primer solution. After volatilizing the solvent, laser treatment was performed using MX-Z2000H (wavelength: 1,062 nm, spot diameter of laser L: approximately 45 μm) manufactured by Omron Corporation.

[0036] At this time, by changing the energy of the pulsed laser, the number of scanning times, and the interval between the spots of laser L, the area ratio (X / Y) of the area X of the convex portion 104 and the area Y of the concave portion 103, and the depth of the concave portion 103 were controlled. The area ratio (X / Y) of the area X of the convex portion 104 and the area Y of the concave portion 103, and the depth of the concave portion 103 were measured with a laser microscope. EH456 was applied to the obtained metal member, and a bonded body was produced by bonding. In Comparative Example 1, there was no primer and no laser treatment.

[0037] The adhesive strength was measured by a shear tensile test according to JIS K 6850. When the strength was 5 MPa or less, it was marked as ×, when it was 5 MPa to 8 MPa, it was marked as 〇, when it was 8 MPa to 12 MPa, it was marked as ◎, and when it was higher than 12 MPa, it was marked as ◎◎.

[0038]

Table 1

[0039]

Table 2

[0040]

Table 3

[0041]

Table 4

[0042] As shown in Tables 1 - 4, Without a primer and without laser treatment, the determination was ×. In contrast, in the sample where the primer was applied and then laser treatment was performed, the strength was improved and the determination became ○, ◎, or ◎◎. It is considered that the adhesion strength was improved due to the anchor effect and the effect of the primer on the convex portion. Further, when the depth of the concave portion 103 was in the range of 1 μm or more and 1000 μm or less, and the area ratio (X / Y) of the area X of the convex portion 104 to the area Y of the concave portion 103 was in the range of 0.001 or more and 5 or less, the strength was further increased. This is considered to be because the effects of the primer and the anchor effect were sufficiently manifested. In the case of polyrotaxane, when the functional group was carboxylic acid or aldehyde, the strength was higher compared to the hydroxyl group. This is considered to be because carboxylic acid and aldehyde are more reactive than the hydroxyl group and thus strongly interacted with the A5052 material and the adhesive.

[0043] As described above, it was confirmed that in the joined body 100 in which the primer layer 105 was formed on the convex portion 104 and the primer layer 105 in the concave portion 103 was less than that on the convex portion 104, a sufficient anchor effect and adhesion reliability were obtained.

[0044] (Embodiment 2) Next, Embodiment 2 of the present disclosure will be described. In the description of the following other embodiments, for the parts that are the same as the configuration and operation described in Embodiment 1 above, the description will be omitted by appropriately attaching the same reference numerals, etc., and the parts different from Embodiment 1 will be described below.

[0045] [Semiconductor device] FIG. 5 is a cross-sectional view of a semiconductor device according to Embodiment 2 of the present invention. As shown in FIG. 5, the semiconductor device 200 includes a semiconductor element 201, wires 202A and 202B, electrode terminals 203, a resin member 204, an insulating substrate 207, a conductive layer 208, and a surface electrode 210.

[0046] The semiconductor element 201 is mounted on one side in the thickness direction of the insulating substrate 207 (hereinafter referred to as "one side in the thickness direction"). The surface on the other side in the thickness direction (hereinafter referred to as "the other side in the thickness direction"), which is the side opposite to the surface of the insulating substrate 207 on which the semiconductor element 201 is mounted, is joined to the heat spreader 209.

[0047] A conductive layer 208 formed of a metal member is provided on the surface of the insulating substrate 207. The semiconductor element 201 is joined to the conductive layer 208 by solder 206. The semiconductor element 201 has, for example, an insulated-gate bipolar transistor (IGBT), a diode (Di), etc. formed on a semiconductor substrate such as silicon (Si), silicon carbide (SiC), or gallium nitride (GaN).

[0048] However, the semiconductor element 201 is not limited to the above configuration, and for example, it may be an insulated-gate field-effect transistor (MOSFET) or a high electron mobility transistor (HEMT). Also, the semiconductor element 201 may be composed of a plurality of elements, or a plurality of types of semiconductor elements may be mounted.

[0049] The insulating substrate 207 is composed of, for example, aluminum nitride (AlN). A resin case 205 is fixed to the insulating substrate 207 on which the semiconductor element 201 is mounted. The resin case 205 is formed of, for example, polyphenylene sulfide resin.

[0050] An electrode terminal 203 formed of a metal member is attached to the resin case 205. The surface electrode 210 is provided on one side in the thickness direction of the semiconductor element 201. The surface electrode 210 is formed of a metal member. The electrode terminal 203 and the surface electrode 210 are electrically connected by a wire 202A. The wire 202A connects the electrode terminal 203 and the surface electrode 210 by wire bonding.

[0051] Also, the electrode terminal 203 and the conductive layer 208 are similarly electrically connected by the wire 202B. The wire 202B is connected to the electrode terminal 203 and the conductive layer 208 by wire bonding. The wires 202A and 202B are wires made of a conductive metal member such as Au or Al, for example.

[0052] Here, the wire 202A, the wire 202B, the surface electrode 210, the electrode terminal 203, and the conductive layer 208 are provided with the concave portion 103 and the convex portion 104 shown in FIGS. 1 and 4 on at least a part of their surfaces. A primer layer 105 is formed on the convex portion 104, and a primer layer 105 less than that on the convex portion 104 is formed on the concave portion 103.

[0053] Note that, for the locations where the wire 202A is electrically connected to the electrode terminal 203, the wire 202A is electrically connected to the surface electrode 210, the wire 202B is electrically connected to the electrode terminal 203, and the wire 202B is electrically connected to the conductive layer 208, there may or may not be locations where the concave portion 103, the convex portion 104, and the primer layer 105 are formed. Even if there are locations where the concave portion 103, the convex portion 104, and the primer layer 105 are formed at the above-mentioned electrically connected locations, electrical connection can be ensured in the concave portion 103 with less primer layer 105.

[0054] Furthermore, the semiconductor device 200 is sealed by a resin member 204 as a sealing resin. The semiconductor device configured in this way has a resin seal with long-term durability because the surface electrode 210, the wire 202A, the wire 202B, the conductive layer 208, the electrode terminal 203, and the resin member 204 are firmly joined due to the anchor effect and the effect of the primer on the convex portion 104.

[0055] [Manufacturing Method of Semiconductor Device] Next, a method for manufacturing a semiconductor device according to Embodiment 2 will be described. The manufacturing method of the semiconductor device 200 according to Embodiment 2 is a semiconductor device 200 in which a surface electrode 210, wires 202A and 202B, a conductive layer 208, or an electrode terminal 203 is sealed with a resin member 204, and at least a part of the joined body of the surface electrode 210, wires 202A and 202B, the conductive layer 208, or the electrode terminal 203 and the resin member 204 is joined by the method for manufacturing a joined body according to Embodiment 1. This will be described in detail below.

[0056] First, an insulating substrate 207 is prepared. The surface of the insulating substrate 207 is provided with a conductive layer 208 formed by a metal member. A semiconductor element 201 is disposed on the conductive layer 208 via solder 206, and the semiconductor element 201 is joined to the conductive layer 208 by a reflow process. Thereby, the semiconductor element 201 and the conductive layer 208 are electrically connected.

[0057] Here, the semiconductor element 201 may previously form a recess 103, a protrusion 104, and a primer layer 105 on a surface electrode 210 formed by a metal member. After applying the primer, the recess 103, the protrusion 104, and the primer layer 105 are formed by irradiating with a laser L. Due to the thermal influence of the laser L, the primer layer 105 is heated, and the surface electrode 210 and the primer layer 105 are firmly adhered. At the location irradiated with the laser L, the surface electrode 210 is melted or evaporated by ablation, and the recess 103 is formed. At this time, since a part of the primer layer 105 also evaporates, the primer layer in the recess 103 becomes less than the primer layer in the protrusion 104.

[0058] The laser L is preferably a pulse laser in order to avoid deformation of the surface electrode 210. Also, the wavelength of the pulse laser is not particularly limited, but as an example of a wavelength suitable for metal processing, a wavelength of 200 nm or more and 10000 nm or less is preferable, and further, a wavelength of 400 nm or more and 2000 nm or less is more preferable. Also, if necessary, the laser L may be irradiated in a gas atmosphere such as N2, Ar, or He.

[0059] The area ratio (X / Y) of the area X of the convex portion 104 and the area Y of the concave portion 103, and the depth of the concave portion 103 can be controlled by changing the energy of the pulsed laser, the number of scanning times, and the interval between the spots of the laser L. Further, in addition to the surface electrode 210, the conductive layer 208 may be irradiated with the laser L after applying a primer, and the concave portion 103, the convex portion 104, and the primer layer 105 may be formed on the surface of the conductive layer 208.

[0060] Next, the electrode terminal 203 formed of a metal member and the semiconductor element 201 are electrically connected by a wire 202A formed of a metal member. The wire 202A is joined to the electrode terminal 203 and the semiconductor element 201 by, for example, a wire bonding apparatus. Also, the electrode terminal 203 and the conductive layer 208 are similarly electrically connected by a wire 202B by, for example, a wire bonding apparatus.

[0061] Incidentally, as the wire 202A and the wire 202B, those in which the concave portion 103, the convex portion 104, and the primer layer 105 are respectively formed in advance on the surfaces of the wire 202A and the wire 202B by irradiating the laser L after applying the primer may be used.

[0062] Next, the resin member 204 is used to seal the insulating substrate 207 and the semiconductor element 201 mounted on the insulating substrate 207. As the resin member 204, for example, a liquid sealing material such as an epoxy resin is used, and it is poured into the resin case 205 until the semiconductor element 201, the wire 202A, and the wire 202B mounted on the insulating substrate 207 are immersed, and then cured by heat treatment. As described above, the concave portion 103, the convex portion 104, and the primer layer 105 are formed on at least a part of the surface electrode 210, the conductive layer 208, the electrode terminal 203, the wire 202A, and the wire 202B formed of a metal member, and are firmly joined to the resin member 204.

[0063] Therefore, in the semiconductor device according to the second embodiment, the semiconductor device 200 is a semiconductor device in which the surface electrode 210, the conductive layer 208, the electrode terminal 203, the wire 202A or the wire 202B is resin-sealed by the resin member 204, and at least a part of the joined body of the surface electrode 210, the conductive layer 208, the electrode terminal 203, the wire 202A or the wire 202B and the resin member 204 includes the joined body 100 described in the first embodiment. According to such a configuration, it is possible to obtain the semiconductor device 200 including the joined body in which the surface electrode 210, the conductive layer 208, the electrode terminal 203, the wire 202A, and the wire 202B formed of the metal member and the resin member 204 are firmly joined.

[0064] As described above, the preferred embodiments according to the present disclosure have been described with reference to the accompanying drawings. Needless to say, the present disclosure is not limited to such examples. The various shapes, combinations, etc. of the respective constituent members shown in the above examples are merely examples, and can be variously changed based on design requirements and the like without departing from the gist of the present disclosure.

[0065] For example, immediately before sealing by the resin member 204, for at least a part of the surface electrode 210, the conductive layer 208, the electrode terminal 203, the wire 202A, and the wire 202B, by irradiating the laser L after applying the primer, the concave portion 103, the convex portion 104, and the primer layer 105 may be formed to fabricate the semiconductor device 200.

[0066] Furthermore, the present disclosure is not limited to the application to the above-described semiconductor device, but is a technology widely applicable to fields where resin-metal bonding is used. For example, those to which resin-metal bonding is applied include vehicle parts, electric railway parts, elevator parts, aircraft parts, artificial satellite parts, optical communication parts, industrial robot parts, generator parts, air-conditioning and refrigeration equipment parts, and household electrical appliance parts.

Description of Reference Numerals

[0067] 100 Assembly, 101 Metal member, 102 Resin member, 103 Recessed portion, 104 Protruding portion, 105 Primer layer, 106 Bonding surface, 200 Semiconductor device, 201 Semiconductor element, 202A, 202B Wires, 203 Electrode terminal, 204 Resin member, 208 Conductive layer, 210 Surface electrode

Claims

1. A metal member; a resin member joined to the metal member; Equipped with The joining surface of the metal member has a recess and a protrusion, A primer layer is formed on the convex portion, The primer layer in the recessed portion is smaller than that in the protruding portion, the primer layer is a layer that improves adhesion between the metal member and the resin member, The primer layer contains polyrotaxane, the functional groups of the polyrotaxane include carboxylic acids or aldehydes or both; The depth of the recess is 1 μm or more and 1000 μm or less, If the area of ​​the convex portion is X and the area of ​​the concave portion is Y, then A conjugate, wherein the value represented by X / Y is 0.001 or more and 5 or less.

2. A semiconductor device in which a surface electrode, a wire, a conductive layer, or an electrode terminal is sealed with a resin member, A semiconductor device, wherein at least a part of a bonded structure between the surface electrode, the wire, the conductive layer or the electrode terminal and the resin member is the bonded structure according to claim 1 .

3. A step of applying a primer to a metal member to form a primer layer; a step of subjecting the primer layer to laser processing to form recesses and protrusions on the joining surface of the metal member; a step of forming the recessed portion and the protruding portion, and then bonding and sealing the recessed portion and the protruding portion with a resin member to obtain a bonded body; Equipped with the primer layer is a layer that improves adhesion between the metal member and the resin member, The primer layer contains polyrotaxane, the functional groups of the polyrotaxane include carboxylic acids or aldehydes or both; The depth of the recess is 1 μm or more and 1000 μm or less, If the area of ​​the convex portion is X and the area of ​​the concave portion is Y, then The method for producing a joint body, wherein the value represented by X / Y is 0.001 or more and 5 or less.

4. A method for manufacturing a semiconductor device in which a surface electrode, a wire, a conductive layer, or an electrode terminal is sealed with a resin member, comprising the steps of: A method for manufacturing a semiconductor device, comprising the steps of: bonding at least a part of a bonded body between the surface electrode, wire, conductive layer or electrode terminal and the resin member by the method for manufacturing a bonded body according to claim 3 .

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