Display device with touch and fingerprint sensors

Abstract

To provide a display device with a touch and fingerprint sensor having the excellent response speed.SOLUTION: A display device with a touch and fingerprint sensor includes a sensor part comprising a first sensor electrode extending in a first direction and a second sensor electrode extending in a second direction intersecting the first direction, a display part having a region overlapping with the sensor part, a shield electrode sandwiched between the sensor part and the display part, a first insulating layer between the first and second sensor electrodes and the shield electrode, and a second insulating layer between the shield electrode and the display part. The display part includes a transistor overlapping with the second sensor electrode. The shield electrode has an opening in a region overlapping with the second sensor electrode. The transistor includes a gate electrode. The gate electrode is electrically connected to the second sensor electrode through a contact hole penetrating the first and second insulating layers. The contact hole overlaps with the opening and has a smaller diameter than the opening.SELECTED DRAWING: Figure 13A

Description

[Technical field]

[0001] In one embodiment of the present invention, in addition to the function as a touch sensor, it is possible to detect biometric information such as fingerprints and palm prints. The present invention relates to a display device having a sensor that can output a signal. [Background technology]

[0002] To prevent fraud and protect personal information, we have developed a system that uses biometric authentication to identify users. Development of child devices is underway. For example, display panels with pixels made of organic light-emitting diodes are A display device with a fingerprint sensor attached to the back of the panel has been disclosed (Patent Document 1 In addition, a touch sensor is installed on the display panel, and it can recognize fingerprints and touch pressure. A possible display device is disclosed in US Pat. No. 5,399,633. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2018-085114 A [Patent Document 2] JP 2018-005910 A Summary of the Invention [Problem to be solved by the invention]

[0004] For portable electronic devices whose display screen occupies the entire front of the device, the display screen There is a market need to enable fingerprint authentication on any surface. In contrast to the conventional display devices, the display device disclosed in Patent Document 1 has a small fingerprint authentication sensor. Because it is installed as a separate component, it cannot detect fingerprints across the entire screen. There is a problem. If we try to enable fingerprint authentication across the entire screen, the housing will become larger. There is such a problem.

[0005] On the other hand, in the display device disclosed in Patent Document 2, since the circuit for image display and the circuit for driving the fingerprint sensor are completely separated, the number of connection terminals for signal input and output significantly increases. There is such a problem. The dimensions of the display panel are determined by the electronic device to be mounted, and the positions where the connection terminals can be arranged are also limited. Therefore, in addition to the connection terminals for inputting video signals, when adding terminals for outputting the signals of the fingerprint sensor, it is necessary to narrow the pitch of the connection terminals. However, when the pitch of the terminal electrodes becomes narrow, it becomes difficult to connect to the flexible printed circuit board using the conventional anisotropic conductive film (ACF), and the yield decreases, which becomes a problem. The dimensions of the display panel are determined by the electronic device to be mounted, and the positions where the connection terminals can be arranged are also limited. Accordingly, in addition to the connection terminals for inputting video signals, when adding terminals for outputting the signals of the fingerprint sensor, it is necessary to narrow the pitch of the connection terminals. However, when the pitch of the terminal electrodes becomes narrow, it becomes difficult to connect to the flexible printed circuit board using the conventional anisotropic conductive film (ACF), and the yield decreases, which becomes a problem. However, when the pitch of the terminal electrodes becomes narrow, it becomes difficult to connect to the flexible printed circuit board using the conventional anisotropic conductive film (ACF), and the yield decreases, which becomes a problem. However, when the pitch of the terminal electrodes becomes narrow, it becomes difficult to connect to the flexible printed circuit board using the conventional anisotropic conductive film (ACF), and the yield decreases, which becomes a problem.

Means for Solving the Problems

[0006] The display device with touch and fingerprint detection functions according to an embodiment of the present invention includes a display unit including a plurality of data signal lines and at least one first sensor electrode, a terminal unit including a first terminal and a second terminal, and a switching circuit disposed between the display unit and the terminal unit, having one input end and a plurality of output ends, and distributing the input signal input to the one input end to the plurality of output ends. The switching circuit has a structure in which the input side is connected to the first terminal, the plurality of data signal lines are connected to the plurality of output ends, and at least one first sensor electrode is connected to the second terminal. The display device with touch and fingerprint detection functions according to an embodiment of the present invention includes a display unit including a plurality of data signal lines and at least one first sensor electrode, a terminal unit including a first terminal and a second terminal, and a switching circuit disposed between the display unit and the terminal unit, having one input end and a plurality of output ends, and distributing the input signal input to the one input end to the plurality of output ends. The switching circuit has a structure in which the input side is connected to the first terminal, the plurality of data signal lines are connected to the plurality of output ends, and at least one first sensor electrode is connected to the second terminal. The display device with touch and fingerprint detection functions according to an embodiment of the present invention includes a display unit including a plurality of data signal lines and at least one first sensor electrode, a terminal unit including a first terminal and a second terminal, and a switching circuit disposed between the display unit and the terminal unit, having one input end and a plurality of output ends, and distributing the input signal input to the one input end to the plurality of output ends. The switching circuit has a structure in which the input side is connected to the first terminal, the plurality of data signal lines are connected to the plurality of output ends, and at least one first sensor electrode is connected to the second terminal. The switching circuit has a structure in which the input side is connected to the first terminal, the plurality of data signal lines are connected to the plurality of output ends, and at least one first sensor electrode is connected to the second terminal.

[0007] The display device with touch and fingerprint sensor according to an embodiment of the present invention includes a first sensor electrode extending in a first direction, a second sensor electrode extending in a second direction intersecting the first direction, and a second direction. The display device with touch and fingerprint sensor according to an embodiment of the present invention includes a first sensor electrode extending in a first direction, a second sensor electrode extending in a second direction intersecting the first direction, and a second direction. ​A scanning signal line extending thereto, a pixel overlapping with the second sensor electrode, and a transistor provided in the pixel. The gate electrode of the transistor is connected to the scanning signal line, and the scanning signal line is connected to the second sensor electrode.

Advantages of the Invention

[0008] According to an embodiment of the present invention, by having a switching circuit connected to a plurality of data signal lines, the first sensor electrodes can be arranged at a high density, and even in that case, an increase in the number of connection terminals can be suppressed. As a result, connection failures with the flexible circuit board at the terminal portion can be reduced. According to an embodiment of the present invention, since the scanning signal line is connected to the second sensor electrode, the scanning signal line can be used in combination as an auxiliary electrode of the second sensor electrode.

Brief Description of the Drawings

[0009]

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Mode for Carrying Out the Invention

[0010] Hereinafter, embodiments of the present invention will be described with reference to the drawings and the like. However, the present invention includes many different aspects and is not construed as being limited to the embodiments illustrated below. The drawings attached to this specification are schematically represented in terms of the width, thickness, shape of each part, etc. compared to the actual aspect in order to make the description clearer, but this is only an example and does not necessarily limit the content of the present invention. Further, in the present invention, when a specific element described in one drawing and a specific element described in another drawing are in the same or corresponding relationship, the same reference numeral (or a reference numeral with a, b, etc. appended after the numeral described as a reference numeral) is attached, and the repeated description may be appropriately omitted. Furthermore, the letters "first" and "second" appended to each element are for convenience of distinguishing each element and have no further meaning unless otherwise specified.

[0011] In this specification, when a certain member or region is "above (or below)" another member or region​ When it is set as such, unless there are special limitations, this is not only the case where it is directly above (or directly below) another member or region, but also includes the case where it is above (or below) another member or region. That is, it also includes the case where another component is included between a member or region located above (or below) another member or region.

[0012] [First Embodiment] This embodiment shows an example of a display device in which a display unit and a touch and fingerprint sensor unit are arranged overlappingly.

[0013] 1-1. Configuration of Display Device with Touch and Fingerprint Sensor FIG. 1 shows an exploded view of a display device 100 with a touch and fingerprint sensor according to an embodiment of the present invention. The display device 100 with a touch and fingerprint sensor includes a display unit 102 in which a plurality of pixels 104 are arranged, and a touch and fingerprint sensor unit 110 including at least one first sensor electrode 112 and at least one second sensor electrode 114. A shield electrode 116 is arranged between the display unit 102 and the touch and fingerprint sensor unit 110.

[0014] At least one first sensor electrode 112 is arranged to extend in the Y direction, and at least one second sensor electrode 114 is arranged to extend in the X direction. At least one first sensor electrode 112 is composed of a plurality of first sensor electrodes (hereinafter, the same reference numeral "112" is attached in the same manner), and the plurality of first sensor electrodes 112 are arranged in the X direction. At least one second sensor electrode 114 is composed of a plurality of second sensor electrodes (hereinafter, the same reference numeral "114" is attached in the same manner), and the plurality of second sensor electrodes 114 are arranged in the Y direction. The plurality of first sensor electrodes 112 and The plurality of second sensor electrodes 114 are arranged to intersect with each other with an insulating layer (not shown) interposed therebetween. .

[0015] In the region outside the display unit 102, a first drive circuit 118, a switching circuit 120 (also referred to as a "multiplexer" or "demultiplexer"), and a terminal unit 122 are provided. The shield electrode 116 is provided to electrically isolate the display unit 102 from the touch and fingerprint sensor unit 110. The shield electrode 116 is provided to electrically separate the display unit 102 from the touch and fingerprint sensor unit 110. A constant potential (for example, ground potential) is applied to the shield electrode 116.

[0016] Each of the plurality of pixels 104 includes a light-emitting element. As the light-emitting element, for example, an electroluminescence element (hereinafter also referred to as an "EL element") is used. The EL elements provided in each of the plurality of pixels 104 are of a bottom emission type that emits light toward the side of the shield electrode 116. The first sensor electrode 112, the second sensor electrode 114, and the shield electrode 116 are translucent. The first sensor electrode 112, the second sensor electrode 114, and the shield electrode 116 are formed of a transparent conductive film. Alternatively, the first sensor electrode 112, the second sensor electrode 114, and the shield electrode 116 may be provided with openings in accordance with the arrangement of the plurality of pixels 104. With such a configuration, the light emitted from the EL element is emitted through the shield electrode 116 and the touch and fingerprint sensor unit 110. The first sensor electrode 112, the second sensor electrode 114, and the shield electrode 116 are formed of a transparent conductive film. Or, the first sensor electrode 112, the second sensor electrode 114, and the shield electrode 116 may have openings provided in accordance with the arrangement of the plurality of pixels 104. The first sensor electrode 112, the second sensor electrode 114, and the shield electrode 116 are of a bottom emission type that emits light toward the side of the shield electrode 116. The first sensor electrode 112, the second sensor electrode 114, and the shield electrode 116 are translucent. The first sensor electrode 112, the second sensor electrode 114, and the shield electrode 116 are formed of a transparent conductive film. The first sensor electrode 112, the second sensor electrode 114, and the shield electrode 116 may be provided with openings in accordance with the arrangement of the plurality of pixels 104. With such a configuration, the light emitted from the EL element is emitted through the shield electrode 116 and the touch and fingerprint sensor unit 110. The touch and fingerprint sensor-equipped display device 100 has a configuration in which an image displayed on the display unit 102 is visible from the side where the touch and fingerprint sensor unit 110 is provided. Since the touch and fingerprint sensor unit 110 is provided so as to overlap the display unit 102,

[0017] the touch and fingerprint sensor-equipped display device 100 has a configuration in which an image displayed on the display unit 102 is visible from the side where the touch and fingerprint sensor unit 110 is provided. The touch and fingerprint sensor unit 110 is provided so as to overlap the display unit 102. the touch and fingerprint sensor unit 110 is provided so as to overlap the display unit 102. The display device 100 can detect touches and fingerprints at any position on the display screen.

[0018] A sealing layer 124 may be provided on the display unit 102. The sealing layer 124 is provided to protect the display unit 102, the first drive circuit 118, and the switching circuit 120. The configuration of the sealing layer 124 is arbitrary. For example, the sealing layer 124 is formed of an inorganic insulating film such as a silicon oxide film or a silicon nitride film. Also, the sealing layer 124 may be formed using a resin material such as a polyimide resin, an acrylic resin, or an epoxy resin.

[0019] FIG. 2 shows the display unit 102, the touch and fingerprint sensor unit 110, the first drive circuit 118, the switching circuit 120, the terminal unit 122, and the second drive circuit 128 of the display device 100 with a touch and fingerprint sensor according to the present embodiment. The display unit 102, the touch and fingerprint sensor unit 110, the first drive circuit 118, the switching circuit 120, and the terminal unit 122 are provided on the transparent resin substrate 200. The second drive circuit 128 is provided on the flexible circuit board 126. The second drive circuit 12 8 is mounted on the flexible circuit board 126 by COF (Chip on Film).

[0020] The display unit 102 includes a plurality of pixels 104. The plurality of pixels 104 are arranged, for example, in an array such as a stripe arrangement, a delta arrangement, a Bayer arrangement, a pentile arrangement, a diamond pentile arrangement, etc. Data signal lines 108 and scanning signal lines (not shown) are provided in the display unit 102. For the plurality of pixels 104 arranged in the first direction (column direction) and the second direction (row direction), the data signal lines 108 extend in the first direction (column direction), and the scanning signal lines are arranged to extend in the second direction (row direction) intersecting the first direction.

[0021] The first drive circuit 118 is disposed in an area outside the display unit 102 (hereinafter also referred to as the "peripheral area"). The first drive circuit 118 is connected to a scanning signal line (not shown). The first drive circuit 118 is disposed along one side of the display unit 102. A plurality of data signal lines 1 08 (not shown) are arranged in the first direction (column direction) and are connected to the switching circuit 120.

[0022] A terminal portion 122 having a plurality of connection terminals arranged at one end of the transparent resin substrate 200 is provided. The switching circuit 120 is disposed in an area between the display unit 102 and the terminal portion 122. The switching circuit 12 0 has a function of distributing one input to a plurality of outputs. The switching circuit 120 connects one connection terminal provided in the terminal portion 122 to the plurality of data signal lines 108.

[0023] The touch and fingerprint sensor unit 110 includes a plurality of first sensor electrodes 112 extending in the first direction (column direction) and a plurality of second sensor electrodes 114 extending in the second direction (row direction). Each of the plurality of first sensor electrodes 112 is connected to a connection terminal disposed in the terminal portion 122. The plurality of second sensor electrodes 114 are connected to the first drive circuit 118. The plurality of first sensor electrodes 112 and the plurality of second sensor electrodes 114 are arranged to intersect with each other with an insulating layer (not shown) interposed therebetween and function as a fingerprint sensor and a touch sensor.

[0024] The flexible circuit board 126 includes wirings connecting the first drive circuit 118, the switching circuit 120, and the first sensor electrodes 112 to the second drive circuit 128. The flexible circuit board 1 26 is connected to the connection terminals of the terminal portion 122 via an anisotropic conductive material. The second drive circuit 12 8 ​​​​​The scanning signal line driving circuit block 130 of 8 is connected to the first driving circuit 118 and the data signal The line driving circuit block 132 is connected to the switching circuit 120, and the touch and fingerprint sensor detection circuit block 134 is connected to the first sensor electrode 112.

[0025] In the second driving circuit 128, the scanning signal line driving circuit block 130 has a function of outputting a signal for driving the first driving circuit 11 8 that outputs the scanning signal of the display unit 102 and the scan signal of the touch and fingerprint sensor unit 110. The data signal line driving circuit block 132 has a function of outputting a video signal, and the touch and fingerprint sensor detection circuit block 134 amplifies the sensing signal output from the first sensor electrode 112 and has a function of generating a digital signal as a sensor output.

[0026] FIG. 2 shows an example in which the second driving circuit 128 is provided as an integrated circuit (hybrid IC) in which a plurality of circuit blocks are integrated on one semiconductor chip. By using such an integrated circuit in this way, the number of manufacturing steps can be reduced compared to the case of mounting individual IC chips, and the manufacturing cost can be reduced. Note that the second driving circuit 128 is not limited to this example, and those in which each circuit block is realized by an individual integrated circuit may be used.

[0027] FIGS. 3A and 3B show the timing charts of the display device 100 with a touch and fingerprint sensor shown in FIG. 2. The display device 100 with a touch and fingerprint sensor has the first driving circuit 118 serving as both the scanning signal line driving circuit of the display unit 102 and the scan signal output circuit of the touch and fingerprint sensor unit 110. Therefore, the display device 100 with a touch and fingerprint sensor has a display period It is driven so that the sensing period and the display period appear alternately.

[0028] FIG. 3A shows an example in which a sensing period appears for each display period of one frame. FIG. 3B shows an example in which a sensing period appears at a rate of once per display period for two frames. The length of the sensing period is arbitrary and can be set shorter than one frame period. Since the frame frequency is 60 Hz or higher, even if a sensing period is provided between frames, it is possible to perform touch or fingerprint sensing while displaying an image without affecting the vision on the display unit 102. FIG. 3B shows an example in which a sensing period appears at a rate of once per display period for two frames. The length of the sensing period is arbitrary and can be set shorter than one frame period. Since the frame frequency is 60 Hz or higher, even if a sensing period is provided between frames, it is possible to perform touch or fingerprint sensing while displaying an image without affecting the vision on the display unit 102. The length of the sensing period is arbitrary and can be set shorter than one frame period. Since the frame frequency is 60 Hz or higher, even if a sensing period is provided between frames, it is possible to perform touch or fingerprint sensing while displaying an image without affecting the vision on the display unit 102. Since the frame frequency is 60 Hz or higher, even if a sensing period is provided between frames, it is possible to perform touch or fingerprint sensing while displaying an image without affecting the vision on the display unit 102. Since the frame frequency is 60 Hz or higher, even if a sensing period is provided between frames, it is possible to perform touch or fingerprint sensing while displaying an image without affecting the vision on the display unit 102. can be done.

[0029] 1-2. Equivalent circuit of pixel FIG. 4 shows an example of the equivalent circuit of the pixel 104. The pixel 104 includes a first sub-pixel 105r, a second sub-pixel 105g, and a third sub-pixel 105b. The first sub-pixel 105r includes a driving transistor 136, a selection transistor 138, a capacitive element 140, and an EL element 142. The second sub-pixel 105g and the third sub-pixel 105b also have the same configuration. In FIG. 4, the symbols indicating the driving transistor 136 and the selection transistor 138 indicate a dual-gate structure in which a semiconductor layer is sandwiched between two gate electrodes. The driving transistor 136 has a lower first gate electrode 150 and an upper second gate electrode 151, and the selection transistor 138 has a lower first gate electrode 152 and an upper second gate electrode 153. The driving transistor 136 and the selection transistor 138 are n-channel type transistors. FIG. 4 shows an example of the equivalent circuit of the pixel 104. The pixel 104 includes a first sub-pixel 105r, a second sub-pixel 105g, and a third sub-pixel 105b. The first sub-pixel 105r includes a driving transistor 136, a selection transistor 138, a capacitive element 140, and an EL element 142. The second sub-pixel 105g and the third sub-pixel 105b also have the same configuration. In FIG. 4, the symbols indicating the driving transistor 136 and the selection transistor 138 indicate a dual-gate structure in which a semiconductor layer is sandwiched between two gate electrodes. The driving transistor 136 has a lower first gate electrode 150 and an upper second gate electrode 151, and the selection transistor 138 has a lower first gate electrode 152 and an upper second gate electrode 153. The driving transistor 136 and the selection transistor 138 are n-channel type transistors. The first sub-pixel 105r includes a driving transistor 136, a selection transistor 138, a capacitive element 140, and an EL element 142. The second sub-pixel 105g and the third sub-pixel 105b also have the same configuration. In FIG. 4, the symbols indicating the driving transistor 136 and the selection transistor 138 indicate a dual-gate structure in which a semiconductor layer is sandwiched between two gate electrodes. The driving transistor 136 has a lower first gate electrode 150 and an upper second gate electrode 151, and the selection transistor 138 has a lower first gate electrode 152 and an upper second gate electrode 153. The driving transistor 136 and the selection transistor 138 are n-channel type transistors. In FIG. 4, the symbols indicating the driving transistor 136 and the selection transistor 138 indicate a dual-gate structure in which a semiconductor layer is sandwiched between two gate electrodes. The driving transistor 136 has a lower first gate electrode 150 and an upper second gate electrode 151, and the selection transistor 138 has a lower first gate electrode 152 and an upper second gate electrode 153. The driving transistor 136 has a lower first gate electrode 150 and an upper second gate electrode 151, and the selection transistor 138 has a lower first gate electrode 152 and an upper second gate electrode 153. The driving transistor 136 has a lower first gate electrode 150 and an upper second gate electrode 151, and the selection transistor 138 has a lower first gate electrode 152 and an upper second gate electrode 153. The driving transistor 136 and the selection transistor 138 are n-channel type transistors.

[0030] The second gate electrode 153 of the selection transistor 138 is connected to the scanning signal line 106a, the source side is connected to the data signal line 108, and the drain side is connected to the capacitive element 140 and the second gate electrode of the driving transistor 136. The second gate electrode 153 of the selection transistor 138 is connected to the scanning signal line 106a, the source side is connected to the data signal line 108, and the drain side is connected to the capacitive element 140 and the second gate electrode of the driving transistor 136. It is connected to the gate electrode 151. The first gate electrode 150 of the driving transistor 136 is common wiring 144b, the source side is the common electrode 144a, and the drain side is the cathode of the EL element 142 and is connected. One terminal (first terminal) of the capacitor element 140 is connected to the drain side of the selection transistor 138 and the other terminal is connected to the common wiring 144b. The anode of the EL element 142 is connected to the power supply line 154.

[0031] In FIG. 4, the common electrode 144a and the common wiring 144b are shown separately in the equivalent circuit, but both are at the same potential and are fixed at a certain potential (for example, the ground potential) and are functionally the same in this regard. The power supply line 154 is supplied with a power supply potential VDD higher than the potential of the common electrode 144a and the common wiring 1 44b. When the driving transistor 136 is in the on state , a current flows from the power supply line 154 to the common electrode 144a in the EL element 142 . The current flowing at this time is also the drain current of the driving transistor 136, and it is possible to control the amount of current (which is also the light emission intensity of the EL element) by the potential of the second gate electrode 151 .

[0032] Note that the equivalent circuit of the pixel shown in FIG. 4 is an example, and the touch and fingerprint sensor-equipped display device 100 according to the present embodiment can also apply a pixel circuit having another circuit configuration. For example, a pixel circuit in which a circuit for correcting the threshold voltage of the driving transistor is incorporated can be applied .

[0033] 1-3. Switching Circuit FIG. 5 shows the configuration of the switching circuit 120 (120_1 to 120_h), the terminal portion 122, and the second driving circuit 128 of the touch and fingerprint sensor-equipped display device 100 according to the present embodiment. The switching circuit The path 120 (120_1 to 120_h) and the terminal portion 122 are provided on the transparent resin substrate 200. The second drive circuit 128 is mounted on the flexible circuit board 126.

[0034] The terminal portion 122 includes a first connection terminal 146a and a second connection terminal 146b. The first connection terminal 146a is a terminal connected to the switching circuit 120 (120_1 to 120_h), and the second connection terminal 146b is a terminal connected to the first sensor electrode 112 (112_1 to 112_k). The flexible circuit board 126 includes a third connection terminal 148a and a fourth connection terminal 148b. The first connection terminal 146a is connected to the third connection terminal 148a, and the second connection terminal 146b is connected to the fourth connection terminal 148b. The connection terminals provided on the transparent resin substrate 200 side and the flexible circuit board 126 side are connected by an anisotropic conductive adhesive.

[0035] The switching circuit 120 (120_1 to 120_h) includes one input end and three output ends. The switching circuit 120 (120_1 to 120_h) includes a first switching element 156a, a second switching element 156b, and a third switching element 156c provided between the input end and the output ends. The first switching element 156a, the second switching element 156b, and the third switching element 156c are formed of transistors. The first switching element 1 56a, the second switching element 156b, and the third switching element 156c are turned on and off controlled by control signal lines 157a, 157b, 157c connected to the gates of the transistors.

[0036] The first switching circuit 120_1 includes the first switching element 156a, the second switching element 1 56b and a third switching element 156c, and are exclusively switched by control signals on control signal lines 157a, 157b, 1 57c. That is, the first switching element 1 56a is switched by the control signal on control signal line 157a, the second switching element 156b is switched by the control signal on the control signal line 1 57b, and the third switching element 156c is switched by the control signal on control signal line 157 c, so that any one of these switching elements is turned on and the other two switching elements are turned off. Such operation is the same for the other switching circuits 120_2 to 120_h. The first switching circuit 120_1 has a first connection terminal 146a connected to its input end and a plurality of

[0037] data signal lines 108 (S1 to S3) connected to its output end. Specifically, in the first switching circuit 120_1, the first switching element 156a is connected between the first connection terminal 146a and the data signal line 108 (S1), the second switching element 156b is connected between the first connection terminal 146a and the data signal line 108 (S2), and the third switching element 156c is connected between the first connection terminal 146a and the data signal line 108 (S3). The other switching circuits 120_ 2 to 120_h have a similar circuit configuration. The first switching circuit 120_1 has the function of distributing the signal input to the first connection terminal 146a to the plurality of data signal lines 108 (S1 to S3) by the switching operations of the first switching element 156a, the second switching element 156b, and the third switching element 156 c. The other switching circuits 120_2 to 120 _h have a similar function. The other switching circuits 120_2 to 120 _h also have a similar function.

[0038] Between the first switching circuit 120_1 and the second switching circuit 120_2, a first sensor electrode 112_ 1 is disposed. The first sensor electrode 112_1 is connected to the second connection terminal 146b. The other first sensor electrodes 112_2 to 112_k are similarly disposed between the other switching circuits 120_2 to 120_h .

[0039] The shield electrode 116 is provided so as to overlap the region of the terminal portion 122. The end of the shield electrode 116 is located outside the first connection terminal 146a and the second connection terminal 146b . The first connection terminal 146a and the second connection terminal 146b are provided on the upper layer side of the shield electrode 116 with an insulating layer (not shown) interposed therebetween. By providing the first connection terminal 146a and the second connection terminal 146b on the upper side of the shield electrode 116, they can withstand the crimping process when connecting the flexible circuit board 126, and can prevent sinking, deformation, and peeling. . Also, by providing the first connection terminal 146a and the second connection terminal 146b on the upper side of the shield electrode 116 , it is possible to prevent a video signal from propagating as noise to the touch and fingerprint sensor unit 110 .

[0040] The first sensor electrodes 112_1 to 112_k are provided on the lower layer side of the shield electrode 116 with an insulating layer (not shown) interposed therebetween. To connect the first sensor electrode 112_1 and the wiring extending from the second connection terminal 146b, a first opening 158 is provided in the shield electrode 116, and a first contact hole 159 penetrating the insulating layer (not shown) is provided inside the first opening 158 . The first sensor electrode 112_1 and the second connection terminal 146b are connected by the first contact hole 159 having a hole diameter smaller than the diameter of the first opening 158 . .

[0041] The second drive circuit 128 includes a data signal line drive circuit block 132 and a touch and fingerprint sensor detection circuit block 134 (including a scanning signal line drive circuit block 130 not further shown). The data signal line drive circuit block 132 includes a circuit that controls the operation of the switching circuit 120 (120_1 to 1 20_h). In the second drive circuit 128, the arrangement of each circuit block is arbitrary, and the arrangement of the data signal line drive circuit block 132 and the touch and fingerprint sensor detection circuit block 134 may be interchanged with the illustrated arrangement.

[0042] In the terminal portion where connection terminals are arranged, if all of a plurality of data signal lines and a plurality of first sensor electrodes are to be separately and independently connected by individual connection terminals, the pitch of the connection terminals becomes small. Generally, when the pitch of the connection terminals provided in the terminal portion becomes small, it becomes difficult to connect to the flexible circuit board, defects occur, and the manufacturing yield decreases, which becomes a problem.

[0043] On the other hand, in the display device 100 with a touch and fingerprint sensor according to the present embodiment, the number of connection terminals is reduced by providing the switching circuit 1 20 (120_1 to 120_h). That is, by providing the switching circuit 120, a plurality of data signal lines 108 (for example, S1 to S3) can be connected to one first connection terminal 146a, and the number of connection terminals is reduced. As a result, even if a second connection terminal 146b connected to the first sensor electrode 112 is added to the terminal portion 122, a simple increase in the number of connection terminals is prevented, and the narrow pitch of the connection terminals can be prevented. As a result, connection failures with the flexible circuit board 126 can be prevented. ​

[0044] FIG. 6 shows an example in which the first switching element 156a, the second switching element 156b, and the third switching element 156c that constitute the switching circuit 120 (120_1 to 120_h) are configured by dual-gate type transistors. By using dual-gate type transistors as the first switching element 156a, the second switching element 156b, and the third switching element 156c, the rise and fall of switching become steep, and the switching circuit 120 (120_1 to 120_h) can operate even when the drive frequency is increased. As a result, even when the frame frequency of the display device 100 with a touch and fingerprint sensor becomes high, the switching circuit 120 (120_1 to 120_h) can be operated in synchronization with the frame frequency. Also, by using dual-gate type transistors as the first switching element 156a, the second switching element 156b, and the third switching element 156c, the off-current (leakage current when the switch is off) can be reduced, and a reliable switching operation can be performed, and the power consumption can be reduced. FIG. 7 shows an example in which the end portion of the shield electrode 116 is disposed inside the terminal portion 122. The end portion of the shield electrode 116 is disposed in a region between the terminal portion 122 and the first opening 158, and the first connection terminal 146a and the second connection terminal 146b are disposed outside the shield electrode 116. According to such a structure, the parasitic capacitance between the first connection terminal 146a and the second connection terminal 146b and the shield electrode 116 can be reduced, and the power consumption can be reduced.

[0045] Note that in FIG. 7, the configuration other than the shield electrode 116 is the same as that shown in FIG. 5. The end portion of the shield electrode 116 is disposed in a region between the terminal portion 122 and the first opening 158, and the first connection terminal 146a and the second connection terminal 146b are disposed outside the shield electrode 116. According to such a structure, the parasitic capacitance between the first connection terminal 146a and the second connection terminal 146b and the shield electrode 116 can be reduced, and the power consumption can be reduced. Note that in FIG. 7, the configuration other than the shield electrode 116 is the same as that shown in FIG. 5. Note that in FIG. 7, the configuration other than the shield electrode 116 is the same as that shown in FIG. 5.

[0046] FIG. 5 shows a configuration in which one first sensor electrode 112 is provided for an array of one column of pixels 104. When the sensitivity as a fingerprint sensor can be tolerated even if it decreases to some extent, it is also possible to reduce the number of the first sensor electrodes 112. For example, one first sensor electrode 112 may be provided for an array of two columns of pixels 104. FIG. 8 shows the switching circuit 120 and the arrangement of the first sensor electrodes 112 in this case. As shown in FIG. 8, even when the number of the first sensor electrodes 112 is reduced, the switching circuit 120 can be arranged, and the pitch of the connection terminals of the terminal portion 122 can be increased. When the number of the first sensor electrodes 112 is reduced, the switching circuit 120 can be arranged, and the pitch of the connection terminals of the terminal portion 122 can be increased. FIG. 8 shows the switching circuit 120 and the arrangement of the first sensor electrodes 112 in this case. As shown in FIG. 8, even when the number of the first sensor electrodes 112 is reduced, the switching circuit 120 can be arranged, and the pitch of the connection terminals of the terminal portion 122 can be increased. As shown in FIG. 8, even when the number of the first sensor electrodes 112 is reduced, the switching circuit 120 can be arranged, and the pitch of the connection terminals of the terminal portion 122 can be increased. Even when the number of the first sensor electrodes 112 is reduced, the switching circuit 120 can be arranged, and the pitch of the connection terminals of the terminal portion 122 can be increased. Even when the number of the first sensor electrodes 112 is reduced, the switching circuit 120 can be arranged, and the pitch of the connection terminals of the terminal portion 122 can be increased.

[0047] In FIGS. 5, 6, 7, and 8, the pitch of the connection terminals of the terminal portion 122 is not uniformly arranged. However, in order to further improve the yield of the process of connecting the terminal portion 122 and the flexible circuit board 126, it is preferable to uniformly arrange the pitch of the connection terminals. In FIGS. 5, 6, 7, and 8, the pitch of the connection terminals of the terminal portion 122 is not uniformly arranged. However, in order to further improve the yield of the process of connecting the terminal portion 122 and the flexible circuit board 126, it is preferable to uniformly arrange the pitch of the connection terminals. In order to further improve the yield of the process of connecting the terminal portion 122 and the flexible circuit board 126, it is preferable to uniformly arrange the pitch of the connection terminals.

[0048] 1-4. Structure of Sensor Electrodes 1-4-1. First Sensor Electrode FIG. 9 shows the arrangement of an array of a plurality of pixels 104, a plurality of first sensor electrodes 112, and a plurality of second sensor electrodes 114. FIG. 9 shows an example in which a plurality of pixels 104 include a first sub-pixel 105r corresponding to red (R), a second sub-pixel 105g corresponding to green (G), and a third sub-pixel 105b corresponding to blue (B), and the sub-pixels corresponding to each color are arranged in a stripe shape in the first direction (column direction). The first sensor electrode 112 extending in the first direction (column direction) is arranged corresponding to the arrangement of the plurality of pixels 104 in the first direction (column direction), and the second sensor electrode 114 extending in the second direction (row direction) is also arranged corresponding to the arrangement of the plurality of pixels 104 in the second direction (row direction). FIG. 9 shows the arrangement of an array of a plurality of pixels 104, a plurality of first sensor electrodes 112, and a plurality of second sensor electrodes 114. FIG. 9 shows an example in which a plurality of pixels 104 include a first sub-pixel 105r corresponding to red (R), a second sub-pixel 105g corresponding to green (G), and a third sub-pixel 105b corresponding to blue (B), and the sub-pixels corresponding to each color are arranged in a stripe shape in the first direction (column direction). FIG. 9 shows an example in which a plurality of pixels 104 include a first sub-pixel 105r corresponding to red (R), a second sub-pixel 105g corresponding to green (G), and a third sub-pixel 105b corresponding to blue (B), and the sub-pixels corresponding to each color are arranged in a stripe shape in the first direction (column direction). FIG. 9 shows an example in which a plurality of pixels 104 include a first sub-pixel 105r corresponding to red (R), a second sub-pixel 105g corresponding to green (G), and a third sub-pixel 105b corresponding to blue (B), and the sub-pixels corresponding to each color are arranged in a stripe shape in the first direction (column direction). The first sensor electrode 112 extending in the first direction (column direction) is arranged corresponding to the arrangement of the plurality of pixels 104 in the first direction (column direction), and the second sensor electrode 114 extending in the second direction (row direction) is also arranged corresponding to the arrangement of the plurality of pixels 104 in the second direction (row direction). The first sensor electrode 112 extending in the first direction (column direction) is arranged corresponding to the arrangement of the plurality of pixels 104 in the first direction (column direction), and the second sensor electrode 114 extending in the second direction (row direction) is also arranged corresponding to the arrangement of the plurality of pixels 104 in the second direction (row direction). The second sensor electrode 114 extending in the second direction (row direction) is also arranged corresponding to the arrangement of the plurality of pixels 104 in the second direction (row direction). do.

[0049] In order to detect a fingerprint, the first sensor electrodes 112 are provided at a pitch of 25 μm to 120 μm. It is necessary to have a pitch range of 45μm to 75μm. The first sensor electrode 112 and the second sensor electrode 114 must also be arranged at a similar pitch. If the pitch of the electrodes 114 is too large, the resolution decreases and the fingerprint cannot be detected accurately. On the other hand, even if the pitch is reduced to less than 25 μm, there is no improvement in the fingerprint detection accuracy, and the number of sensor electrodes increases. This will result in over-spec.

[0050] Although not shown in FIG. 9, the data signal lines are connected to the first subpixel 105r, the second subpixel 105g, and the third sub-pixels 105b are provided corresponding to the arrangement in the first direction (column direction). The first sensor electrodes 112 are provided at a ratio of one to three data signal lines. The data signal lines corresponding to the pixel 105r, the second subpixel 105g, and the third subpixel 105b The pitch is, for example, that of a 5.5-inch, full HD smartphone display panel. Therefore, the distance between the first sensor electrodes 111 and 112 in the column direction of each pixel 104 is 17 μm. 12, the pitch of the first sensor electrodes 112 is 51 μm. 6 and 7, the first connection terminals 146a are arranged at a pitch of 51 μm. Since the second connection terminal 146b is disposed between the terminals 122, The pitch of the second sensor electrode 114 is 25.5 μm. 105r, the second subpixel 105g, and the third subpixel 105b in the second direction (row direction). The pitch of the scanning signal lines is 51 μm, and the pitch of the second sensor electrodes 114 is also 51 μm. becomes m.

[0051] As a sensor for detecting fingerprints, from the perspective of resolution, the pitch of the sensor electrodes is about 50 μm is considered necessary. In a case where a certain degree of reduction in the sensitivity as a fingerprint sensor is acceptable, the number of the first sensor electrodes 112 may be reduced. For example, the first sensor electrodes 112 may be arranged every other pixel. In that case, according to the above example, the pitch of the first sensor electrodes 112 becomes 102 μm, and the pitch of the connection terminals in the terminal portion 122 can be widened to about 34 μm .

[0052] FIG. 10 shows an example in the case where the pitches of both the first sensor electrode 112 and the second sensor electrode 114 shown in FIG. 9 are increased. That is, FIG. 10 shows an example in which one first sensor electrode 112 is provided for a two-column arrangement in the column direction of pixels 104, and one second sensor electrode 114 is provided for a two-row arrangement in the row direction. As described above, the pitch of the first sensor electrode 112 and the second sensor electrode 114 is about 100 μm, but even with such a pitch, fingerprints can be detected. For the arrangement of the first sensor electrode 112 shown in FIG. 10 in the column direction, the arrangement of the connection terminals in the switching circuit 120 and the terminal portion 122 is as shown in FIG. 8, and the pitch of the connection terminals can be widened.

[0053] FIGS. 11A and 11B show an example of the first sensor electrode 112. FIG. 11A shows a plan view of the first sensor electrode 112, and FIG. 11B shows a cross-sectional view corresponding to between A1 - A2.

[0054] The first sensor electrode 112 extends along the first direction (column direction) in the display unit 102 It has a stripe pattern. The first sensor electrode 112 is a first sensor electrode having translucency. It is formed in the first sensor electrode layer 204. The first sensor electrode layer 204 is, for example, indium tin oxide (Indi um Tin Oxide: ITO), zinc oxide (ZnO) doped with aluminum (Al) or gallium (Ga), indium zinc oxide (Indium Zinc Oxide: IZO), tin oxide (SnO2), titanium oxide (TiO ) doped with niobium (Nb), etc. x of a metal oxide having conductivity, titanium nitride (TiN ), titanium oxynitride (TiON), etc. x of a metal nitride or metal oxynitride such as a conductive transparent conductive film, an organic substance having conductivity such as polyaniline or graphene. The width W1 of the first sensor electrode 112 is provided to be wider than the width Wp of the sub-pixel 105. Since the first sensor electrode layer 204 is arranged in accordance with the arrangement in the first direction (column direction) of the sub-pixels 105, the first sensor electrode 112 is provided so as to cover the entire sub-pixel 105. The first sensor electrode layer 204 may have a first auxiliary electrode 205a added thereto. The first auxiliary electrode 205a has a thin line pattern along the upper edges on both sides of the stripe pattern of the first sensor electrode layer 204. Also, the first auxiliary electrode 205a has a strip pattern that connects the thin line patterns on both sides in a region where the sub-pixels 105 arranged in the first direction (column direction) are separated from each other. The first auxiliary electrode 205a may be included. The first auxiliary electrode 205a is formed of a material having a lower resistance than the transparent conductive film material forming the first sensor electrode layer 204. For example, the first auxiliary electrode 205a is a metal film such as aluminum (Al), a metal nitride such as titanium nitride (TiN), titanium silicide (

[0055] ), etc. along the upper edges on both sides of the stripe pattern of the first sensor electrode layer 204. Also, the first auxiliary electrode 205a has a strip pattern that connects the thin line patterns on both sides in a region where the sub-pixels 105 arranged in the first direction (column direction) are separated from each other. The first auxiliary electrode 205a may be included. The first auxiliary electrode 205a is formed of a material having a lower resistance than the transparent conductive film material forming the first sensor electrode layer 204. For example, the first auxiliary electrode 205a is a metal film such as aluminum (Al), a metal nitride such as titanium nitride (TiN), titanium silicide ( ), etc. The first auxiliary electrode 205a is formed of a material having a lower resistance than the transparent conductive film material forming the first sensor electrode layer 204. For example, the first auxiliary electrode 205a is a metal film such as aluminum (Al), a metal nitride such as titanium nitride (TiN), titanium silicide ( ), etc. ), etc. TiSi x ) and other conductive materials such as metal silicides. By using such a conductive material The first auxiliary electrode 205a formed is provided with substantially the same width (thickness) as the data signal line 108 provided in the display unit 102 and is arranged at a position overlapping the data signal line 108. By providing the first auxiliary electrode 205a in contact with the first sensor electrode layer 204, the resistance of the first sensor electrode 112 can be reduced.

[0056] Since the width W1 of the first sensor electrode layer 204 is larger than the width Wp of the sub-pixel 105, the resistance of the first sensor electrode 112 can be reduced without reducing the aperture ratio of the sub-pixel 105. For example, in the case of the display panel of the 5.5-inch, full high-definition compatible smartphone exemplified above, the width of the first sensor electrode 112 can be made wider than 17 μm (51 μm / 3) and 20 μm. Also, the pitch L1 of the strip pattern of the first auxiliary electrode 205a is preferably larger than the length Lp of the sub-pixel 105. The pitch L1 of this strip pattern may be the same as the pitch of the scanning signal line. According to the above example, the pitch L1 may be 51 μm.

[0057] The width (thickness) of this strip pattern is formed to be substantially the same width (thickness) as the scanning signal line 106 and is arranged at a position overlapping the scanning signal line 106. By such an arrangement, the resistance of the first sensor electrode 112 can be reduced without reducing the aperture ratio.

[0058] By providing the first auxiliary electrode 205a in the first sensor electrode layer 204 in this way, the resistance of the first sensor electrode 112 can be reduced. As a result, the touch and fingerprint sensor unit 11 It is possible to prevent a decrease in sensitivity and a decrease in response speed of 0.

[0059] FIGS. 12A and 12B show another example of the first sensor electrode 112. FIG. 12A shows a plan view of the first sensor electrode 112, and FIG. 12B shows a cross-sectional view corresponding to between B1 and B2. The first auxiliary electrode 205b is provided in contact with the first sensor electrode layer 204. The first auxiliary electrode 205b has a shape in which a linear pattern provided in the central portion of the first sensor electrode layer 204 and a strip-shaped pattern provided in the region between the sub-pixels 105 are combined.

[0060] The first auxiliary electrode 205b is formed of a metal film, a metal nitride film, or a metal silicide film. The first auxiliary electrode 205b having the shape shown in FIGS. 12A and 12B is formed with substantially the same width (thickness) as the data signal line 108 of the display unit 102 and is arranged to overlap the data signal line 108. The strip-shaped pattern of the first auxiliary electrode 205b is formed with substantially the same width (thickness) as the scanning signal line 106 and is arranged to overlap the scanning signal line 106. The first sensor electrode 112 can also be made to have a lower resistance by such a first auxiliary electrode 205b. 1-4-2. Second Sensor Electrode FIG. 13A shows a plan view of the second sensor electrode 114. FIG. 13A further shows a part of the structure of the selection transistor 138 provided on the second sensor electrode 114 (the first gate electrode 152, the second oxide semiconductor layer 180b, the second gate electrode 153) in dotted lines. FIG. 13B shows a cross-sectional structure corresponding to between C1 and C2 shown in FIG. 13A. The second sensor electrode 114 extends along the second direction (row direction) in the display unit 102.

[0061]

[0062] ​​​​​​​​​​The second sensor electrode 114 has a stripe pattern. The second sensor electrode 114 is disposed so as to extend across the substrate 111 in the direction perpendicular to the substrate 111 and reach the peripheral region at both ends. The second sensor electrode layer 206 is formed of a light-transmitting second sensor electrode layer 206. Like the first sensor electrode layer 204, it is formed of a transparent conductive film.

[0063] The second sensor electrode 114 is provided with a second auxiliary electrode 207. The second auxiliary electrode 207 is The second auxiliary electrode 207 is provided in contact with the second sensor electrode layer 206. The second auxiliary electrode 207 is formed of a metal film, a metal nitride film, a metal The second sensor electrode 114 is formed of a silicide film. The second sensor electrode layer 206 and the second auxiliary electrode 207 are formed to reduce resistance. do.

[0064] FIG. 13B shows a transparent resin substrate 200 including a first transparent resin layer 202a, a second transparent resin layer 2 02b, the third transparent resin layer 202c, the fourth transparent resin layer 202d, the first insulating layer 210, the second insulating The second sensor electrode layer 206 is a laminate of the second transparent resin layer 202. The second auxiliary electrode 207 is provided between the second sensor electrode 202b and the third transparent resin layer 202c. The shield electrode 116 is provided between the electrode layer 206 and the third transparent resin layer 202c. The fourth transparent resin layer 202c is provided on the shield electrode 116. A first insulating layer 210 is provided on the fourth transparent resin layer 202d. The second oxide semiconductor layer 180b is provided between the first insulating layer 210 and the second insulating layer 212. A second gate electrode 153 is provided on the second insulating layer 212 .

[0065] A second light-shielding layer 208b is provided on the lower layer side of the first gate electrode 152. The second light-shielding layer 208 b is formed of a conductive film continuous from the second auxiliary electrode 207. In other words, as shown in FIG. 13A , a linear pattern of the second auxiliary electrode 207 extending in the second direction (row direction) has a pattern that protrudes convexly in the region where the selection transistor 138 is provided. The second auxiliary electrode 207 having such a pattern functions as the second light-shielding layer 208b for the sub-pixel 105 . Note that the shape in plan view of the second light-shielding layer 208b protruding from the second auxiliary electrode 207 is arbitrary and is not limited to the shape shown in FIG. 13A .

[0066] The second auxiliary electrode 207 also functions as a scanning signal line (gate bus line) 106 of the display unit 102 . The second gate electrode 153 is provided on the second insulating layer 212. The second gate electrode 153 is separated for each sub-pixel 105 and provided individually. The second gate electrode 153 is connected to the second auxiliary electrode 207 through a third contact hole 163 that penetrates the second insulating layer 212, the first insulating layer 210, the fourth transparent resin layer 202d, and the third transparent resin layer 2 02c . A shield electrode 1 16 disposed between the third transparent resin layer 202c and the fourth transparent resin layer 202d has a third opening portion 162 having a diameter d1 larger than the diameter d2 of the third contact hole 163 . The third contact hole 163 is provided so as to penetrate the region inside the third opening portion 162

[0067] The first gate electrode 152 is provided in a state of being connected on the shield electrode 116 . The first gate electrode 152 is fixed to the same potential as the shield electrode 116. The selection transistor ​A constant potential is applied to the opposite side (back channel side) of the second gate electrode 153. By providing the first gate electrode 152, fluctuations in electrical characteristics are suppressed.

[0068] In the structure shown in FIGS. 13A and 13B, since the scanning signal line 106 is disposed on the lower layer side than b of the second oxide semiconductor layer 180 the thickness of the second insulating layer 212 can be reduced to about 100 nm to 200 nm. The second gate electrode 153 does not cross the data signal line 108, so even if the thickness of the second insulating layer 212 is reduced, they will not short-circuit. By thinning the second insulating layer 212 that functions as a gate insulating layer, a selection transistor 138 with excellent switching characteristics and a high response speed can be obtained. Note that FIG. 13A shows only the selection transistor 138, and the drive transistor 136 is omitted. However, a light-shielding layer can be similarly provided for the drive transistor 136 using the metal layer for forming the second auxiliary electrode 207.

[0069] Note that FIG. 13A shows only the selection transistor 138, and the drive transistor 136 is omitted. However, a light-shielding layer can be similarly provided for the drive transistor 136 using the metal layer for forming the second auxiliary electrode 207. 36.

[0070] FIGS. 14A and 14B show a mode different from the structure shown in FIGS. 13A and 13B for the second sensor electrode 114. FIG. 14A shows a plan view of the second sensor electrode 114. FIG. 14A further shows a partial structure (the first gate electrode 152, the second oxide semiconductor layer 180b, the second gate electrode 153, the scanning signal line 10 6) of the selection transistor 138 provided on the second sensor electrode 114. FIG. 14B shows a cross-sectional structure corresponding to the C3-C4 interval shown in FIG. 14A, and FIG. 1 4C shows a cross-sectional structure corresponding to the C5-C6 interval shown in FIG. 14A. 6). 4C shows a cross-sectional structure corresponding to the C5-C6 interval shown in FIG. 14A.

[0071] The second sensor electrode 114 is formed of a second sensor electrode layer 206 and a second auxiliary electrode 207. The second auxiliary electrode 207 extends along the longitudinal direction of the second sensor electrode 114 in the display unit 102. It has a linear pattern extending along the longitudinal direction of the second sensor electrode 114. On the second sensor electrode 114, a second light shielding layer 208b overlapping the second oxide semiconductor layer 180b is provided by a metal film forming the second auxiliary electrode 207. It is provided.

[0072] The second gate electrode 153 and the scanning signal line 106 are provided on the second insulating layer 212. The second gate electrode 153 is formed in a continuous pattern from the scanning signal line 106. That is, the second gate electrode 153 and the scanning signal line 106 are formed of the same conductive layer. The second gate electrode 153 is provided in a state of being connected by the scanning signal line 106 for each row of the sub-pixels 105.

[0073] The scanning signal line 106 is connected to the second auxiliary electrode 207 in the peripheral region. A fourth opening 164 is provided in the shield electrode 116 in the peripheral region. The scanning signal line 106 is provided inside the fourth opening 164 and is connected to the second auxiliary electrode 207 by a fourth contact hole 165 having a hole diameter smaller than the diameter of the fourth opening 164. The second light shielding layer 208b may be separated from the second auxiliary electrode 207 as shown in the figure, or may be provided continuously from the second auxiliary electrode 207 as shown in FIG. 13B.

[0074] Thus, by connecting the scanning signal line 106 to the second auxiliary electrode 207 in the peripheral region, the wiring resistance can be reduced. In other words, the second auxiliary electrode 207 can be used as an auxiliary wiring for the scanning signal line 106.

[0075] Note that FIGS. 14A and 14C show only the selection transistor 138 and the driving transistor 1 36 is omitted. The driving transistor 136 has the same structure as the selection transistor 138 and may be provided with a second light-shielding layer 208b using a metal film that forms the second auxiliary electrode 207.

[0076] 1-5. Partial Structures of Pixel and Sensor FIG. 15 shows an example of a planar layout of the sub-pixels 105 (corresponding to the first sub-pixel 105r, the second sub-pixel 10 5g, and the third sub-pixel 105b respectively) shown in the equivalent circuit of FIG. 4. Note that in FIG. 15, the detailed laminated structures of the first sensor electrode 112, the second sensor electrode 114, and the EL element 142 are omitted.

[0077] As shown in FIG. 15, the sub-pixel 105 includes a driving transistor 136, a selection transistor 13 8, a capacitive element 140, and an EL element 142. In the region of the sub-pixel 105, scanning signal lines 10 6a, data signal lines 108, a common electrode 144a, and a common wiring 144b are provided. The driving transistor 136 has a structure in which a first gate electrode 150 ( lower layer side) and a second gate electrode 151 (upper layer side) are provided with the first oxide semiconductor layer 180a therebetween. The selection transistor 138 has a structure in which a first gate electrode 152 (lower layer side) and a second gate electrode 153 (upper layer side) are provided with the second oxide semiconductor layer 180b therebetween. On the lower layer side of the driving transistor 136, a first light-shielding layer 208a is provided, and on the lower layer side of the selection transistor 138, a second light-shielding layer 208b is provided. The first light-shielding layer 208a and the second light-shielding layer 208b are formed of the same conductive layer that forms the scanning signal line 1 06a. The first light-shielding layer 208a and the second light-shielding layer 208b are formed in a pattern continuous from the scanning signal line 106a.

[0078] ​​The driving transistor 136 includes a first oxide semiconductor layer 180a, a first metal oxide conductive layer 17 6a, and a second metal oxide conductive layer 176b. The first metal oxide conductive layer 176a and the second metal oxide conductive layer 176b are provided so as to be in contact with the first oxide semiconductor layer 180a. The first metal oxide conductive layer 176a and the second metal oxide conductive layer 176b include a region where the ends are separated and face each other. The ends and the separated region are disposed at positions overlapping with the first gate electrode 150, the second gate electrode 151, and the first oxide semiconductor layer 180a. The channel of the driving transistor 136 is formed in a portion where the first metal oxide conductive layer 176a and the second metal oxide conductive layer 176b are separated. The first metal oxide conductive layer 176a is provided in contact with the source wiring 170. The source wiring 1 70 is connected to the common electrode 144a through the fifth contact hole 166. The second metal

[0079] oxide conductive layer 176b is formed in contact with the first electrode 220 forming the EL element 142. The second metal oxide conductive layer 176b and the first electrode 220 are provided in a continuous pattern. The second metal oxide conductive layer 176b extends into the region of the EL element 142 to form the first electrode (cathode) 220. The first oxide semiconductor layer 180a extends into the region of the EL element 142 to form the first electron transport layer 222a. The first electron transport layer 222a is provided so as to cover the first electrode 220.

[0080] The second metal oxide conductive layer 176b extends into the region of the EL element 142 to form the first electrode (cathode) 220. The first oxide semiconductor layer 180a extends into the region of the EL element 142 to form the first electron transport layer 222a. The first electron transport layer 222a is provided so as to cover the first electrode 220. The selection transistor 138 includes a second oxide semiconductor layer 180b, a third metal oxide conductive layer 17

[0081] 6c, and a fourth metal oxide conductive layer 176d. The third metal oxide conductive layer 176c and the fourth metal oxide conductive layer 176d are provided so as to be in contact with the second oxide semiconductor layer 180b. The 4-metal oxide conductive layer 176d is provided so as to be in contact with the second oxide semiconductor layer 180b. . The third metal oxide conductive layer 176c and the fourth metal oxide conductive layer 176d include a region where their ends are separated and face each other. The ends and the separated region are arranged at positions overlapping with the first gate electrode 152, the second gate electrode 153, and the second oxide semiconductor layer 180b. The channel of the selection transistor 138 is formed in a portion where the third metal oxide conductive layer 176c and the fourth metal oxide conductive layer 176d are separated. The third metal oxide conductive layer 176c is provided so as to include a region overlapping and contacting the data signal line 108. The fourth metal oxide conductive layer 176d is provided so as to be in contact with the drain wiring 173. The fourth metal oxide conductive layer 176d and the drain wiring 173 are provided so as to extend into the region of the capacitor element 140.

[0082] The second gate electrode 153 of the selection transistor 138 is provided individually for each sub-pixel 105 and is connected to the scanning signal line 106a(207) via the third contact hole 163. The second gate electrode 151 of the driving transistor 136 is connected to the drain wiring 173 via the seventh contact hole 168. The capacitor element 140 is formed in a region where the drain wiring 173 and the fourth metal oxide conductive layer 176d overlap with the common wiring 144b. An insulating layer is interposed between the drain wiring 173 and the fourth metal oxide conductive layer 176d and the common wiring 144b (not shown in FIG. 15). FIG. 16A shows a cross-sectional structure of the sub-pixel 105 corresponding to the D1-D2 line shown in FIG. 15.

[0083] The second gate electrode 153 of the selection transistor 138 is provided individually for each sub-pixel 105 and is connected to the scanning signal line 106a(207) via the third contact hole 163. The second gate electrode 151 of the driving transistor 136 is connected to the drain wiring 173 via the seventh contact hole 168. The capacitor element 140 is formed in a region where the drain wiring 173 and the fourth metal oxide conductive layer 176d overlap with the common wiring 144b. An insulating layer is interposed between the drain wiring 173 and the fourth metal oxide conductive layer 176d and the common wiring 144b (not shown in FIG. 15). The capacitor element 140 is formed in a region where the drain wiring 173 and the fourth metal oxide conductive layer 176d overlap with the common wiring 144b. An insulating layer is interposed between the drain wiring 173 and the fourth metal oxide conductive layer 176d and the common wiring 144b (not shown in FIG. 15).

[0084] The capacitor element 140 is formed in a region where the drain wiring 173 and the fourth metal oxide conductive layer 176d overlap with the common wiring 144b. An insulating layer is interposed between the drain wiring 173 and the fourth metal oxide conductive layer 176d and the common wiring 144b (not shown in FIG. 15). The capacitor element 140 is formed in a region where the drain wiring 173 and the fourth metal oxide conductive layer 176d overlap with the common wiring 144b. An insulating layer is interposed between the drain wiring 173 and the fourth metal oxide conductive layer 176d and the common wiring 144b (not shown in FIG. 15). An insulating layer is interposed between the drain wiring 173 and the fourth metal oxide conductive layer 176d and the common wiring 144b (not shown in FIG. 15). FIG. 16A shows a cross-sectional structure of the sub-pixel 105 corresponding to the D1-D2 line shown in FIG. 15.

[0085] FIG. 16A shows a cross-sectional structure of the sub-pixel 105 corresponding to the D1-D2 line shown in FIG. 15. 16B shows a cross-sectional structure of the sub-pixel 105 corresponding to the D3-D4 line shown in FIG. 15. FIG. 16 A shows a cross-sectional structure of the driving transistor 136 and the EL element 142, and FIG. 16B shows the selection tra nsistor 138 and the cross-sectional structure of the capacitor element 140.

[0086] The first sensor electrode 112 and the second sensor electrode 114 are provided on the transparent resin substrate 200. The driving transistor 136, the selection transistor 138, the capacitor element 140, and the EL element 14 2 are provided on the transparent resin substrate 200. The transparent resin substrate 200 has a structure in which a plurality of transparent resin layers are stacked. The transparent resin substrate 200 has a structure in which a first transparent resin layer 202a, a second transparent resin layer 202b, and a third transparent resin layer 202c are stacked. The first transparent resin layer 2 02a and the second transparent resin layer 202b are provided with the first sensor electrode 112 therebetween, and the second transparent resin layer 202b and the third transparent resin layer 202c are provided with the second sensor electrode 114 therebetween. The touch and fingerprint sensor unit 110 is provided in a state of being embedded in the transparent resin substrate 200.

[0087] In the display device 100 with a touch and fingerprint sensor according to the present embodiment, the light emitted from the pixel 104 (specifically the EL element 142 provided in each sub-pixel 105) is emitted from the transparent resin substrate 200 side. The first sensor electrode 112 and the second sensor electrode 114 disposed in the region overlapping the pixel 104 are formed of a transparent conductive film so that the light emitted from the pixel 104 can pass through. Also an opening through which light passes may be provided in accordance with the arrangement of the first sensor electrode 112 and the second sensor electrode 114. That is, the first sensor electrode 112 and the second sensor electrode 114 ​​​has a ladder-shaped pattern such as the first auxiliary electrode 205a shown in FIGS. 11A and 11B and may be formed of a metal film such as aluminum (Al), a metal nitride film such as titanium nitride (TiN), or a metal silicide film such as titanium silicide (TiSi x ).

[0088] The first transparent resin layer 202a, the second transparent resin layer 202b, the third transparent resin layer 202c, and the fourth transparent resin layer 202d have a thickness of 3 μm to 20 μm, preferably 10 μm to 15 μm . The transparent resin substrate 200 has flexibility due to a structure in which transparent resin layers having such a film thickness are laminated. In the display device 100 with a touch and fingerprint sensor, the transparent resin substrate 200 side serves as a sensing and display surface. When the first sensor electrode 112 and the second sensor electrode 114 are used as electrodes for detecting fingerprints, the thickness of the first transparent resin layer 202a is preferably thin . The first transparent resin layer 202a and the second transparent resin layer 202b are provided with a thickness of about 10 μm to 15 μm, whereby high fingerprint detection sensitivity can be obtained. In order to form contact holes, the second transparent resin layer 202b, the third transparent resin layer 202c, and the fourth transparent resin layer 202d are preferably as thin as possible as long as pinholes are not generated, but in practice, they preferably have a thickness of 3 μm to 5 μm because of the problem of increased parasitic capacitance. Since the first transparent resin layer 202a is a layer that forms the backbone of the transparent resin substrate 200, it preferably has a thickness of about 20 μm to 50 μm . On the second sensor electrode 114, a first light shielding layer 208a overlapping the driving transistor 136 and a second light shielding layer 208b overlapping the selection transistor 138 are provided. The first light shielding layer 20

[0089] ​​​​​​​​​​The first light-shielding layer 208a and the second light-shielding layer 208b are formed of a metal film, a metal nitride film, or a metal silicide film. The first light-shielding layer 208a and the second light-shielding layer 208b are provided in the same layer as the scanning signal line 106a (which is also the second auxiliary electrode 207) provided on the second sensor electrode 114 as shown in FIG. 15. as provided in the same layer as the scanning signal line 106a (which is also the second auxiliary electrode 207) provided on the second sensor electrode 114 as shown in FIG. 15. is provided.

[0090] A shield electrode 116 is provided between the driving transistor 136, the selection transistor 138, the capacitive element 140, and the EL element 142, and the first sensor electrode 112 and the second sensor electrode 114. A shield electrode 116 is provided between the driving transistor 136, the selection transistor 138, the capacitive element 140, and the EL element 142, and the first sensor electrode 112 and the second sensor electrode 114. The shield electrode 116 is provided between the third transparent resin layer 202c and the fourth transparent resin layer 202d. The shield electrode 116 is provided over the entire display unit 102. The shield electrode 116 is provided between the third transparent resin layer 202c and the fourth transparent resin layer 202d. The shield electrode 116 is provided over the entire display unit 102.

[0091] The shield electrode 116 is formed of a transparent conductive film. As the transparent conductive film, a conductive metal oxide such as indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), tin oxide (SnO2), etc., a metal nitride such as titanium nitride (TiNx) or titanium oxynitride (TiON), or a conductive organic material such as polyaniline or graphene is used. Alternatively, the shield electrode 116 may be formed of a metal material such as aluminum, titanium, or copper, and may have a structure in which openings are provided so that light is transmitted in accordance with the pixel arrangement. The shield electrode 116 is formed of a transparent conductive film. As the transparent conductive film, a conductive metal oxide such as indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), tin oxide (SnO2), etc., a metal nitride such as titanium nitride (TiNx) or titanium oxynitride (TiON), or a conductive organic material such as polyaniline or graphene is used. Alternatively, the shield electrode 116 may be formed of a metal material such as aluminum, titanium, or copper, and may have a structure in which openings are provided so that light is transmitted in accordance with the pixel arrangement. The shield electrode 116 is formed of a transparent conductive film. As the transparent conductive film, a conductive metal oxide such as indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), tin oxide (SnO2), etc., a metal nitride such as titanium nitride (TiNx) or titanium oxynitride (TiON), or a conductive organic material such as polyaniline or graphene is used. Alternatively, the shield electrode 116 may be formed of a metal material such as aluminum, titanium, or copper, and may have a structure in which openings are provided so that light is transmitted in accordance with the pixel arrangement. The shield electrode 116 is formed of a transparent conductive film. As the transparent conductive film, a conductive metal oxide such as indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), tin oxide (SnO2), etc., a metal nitride such as titanium nitride (TiNx) or titanium oxynitride (TiON), or a conductive organic material such as polyaniline or graphene is used. Alternatively, the shield electrode 116 may be formed of a metal material such as aluminum, titanium, or copper, and may have a structure in which openings are provided so that light is transmitted in accordance with the pixel arrangement. The shield electrode 116 is formed of a transparent conductive film. As the transparent conductive film, a conductive metal oxide such as indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), tin oxide (SnO2), etc., a metal nitride such as titanium nitride (TiNx) or titanium oxynitride (TiON), or a conductive organic material such as polyaniline or graphene is used. Alternatively, the shield electrode 116 may be formed of a metal material such as aluminum, titanium, or copper, and may have a structure in which openings are provided so that light is transmitted in accordance with the pixel arrangement. The shield electrode 116 is formed of a transparent conductive film. As the transparent conductive film, a conductive metal oxide such as indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), tin oxide (SnO2), etc., a metal nitride such as titanium nitride (TiNx) or titanium oxynitride (TiON), or a conductive organic material such as polyaniline or graphene is used. Alternatively, the shield electrode 116 may be formed of a metal material such as aluminum, titanium, or copper, and may have a structure in which openings are provided so that light is transmitted in accordance with the pixel arrangement. The shield electrode 116 is formed of a transparent conductive film. As the transparent conductive film, a conductive metal oxide such as indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), tin oxide (SnO2), etc., a metal nitride such as titanium nitride (TiNx) or titanium oxynitride (TiON), or a conductive organic material such as polyaniline or graphene is used. Alternatively, the shield electrode 116 may be formed of a metal material such as aluminum, titanium, or copper, and may have a structure in which openings are provided so that light is transmitted in accordance with the pixel arrangement. The shield electrode 116 is formed of a transparent conductive film. As the transparent conductive film, a conductive metal oxide such as indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), tin oxide (SnO2), etc., a metal nitride such as titanium nitride (TiNx) or titanium oxynitride (TiON), or a conductive organic material such as polyaniline or graphene is used. Alternatively, the shield electrode 116 may be formed of a metal material such as aluminum, titanium, or copper, and may have a structure in which openings are provided so that light is transmitted in accordance with the pixel arrangement. A common electrode 144a and a common wiring 144b are provided in contact with the upper surface of the shield electrode 116. The common wiring 144b is provided so as to extend in the same direction as the direction in which the scanning signal line 106a extends. A common electrode 144a and a common wiring 144b are provided in contact with the upper surface of the shield electrode 116. The common wiring 144b is provided so as to extend in the same direction as the direction in which the scanning signal line 106a extends. ) It is formed of a metal film such as. The common electrode 144a, the common wiring 144b, and the shield electrode 1 16 are at the same potential and a constant potential is applied. For example, the shield electrode 116, the common electrode 144a, and the common wiring 144b have a ground potential applied thereto.

[0092] On the shield electrode 116, a first gate electrode 150 of the drive transistor 136 and a selection first gate electrode 152 of the transistor 138 are provided. The first gate electrode 150 and the first gate electrode 152 are formed in the same layer as the common electrode 144a and the common wiring 144b. . The first gate electrode 150 and the first gate electrode 152 are formed of a metal film. The first gate electrode 150 and the first gate electrode 152 are provided in contact with the upper surface of the shield electrode 116. The first gate electrode 150 and the first gate electrode 152 have the same potential applied thereto as the shield electrode 116.

[0093] In the touch and fingerprint sensor unit 110, the first sensor electrode 112 is a receiver electrode (Rx electrode), and the second sensor electrode 114 functions as a transmitter electrode (Tx electrode). When the touch and fingerprint sensor unit 110 is driven, a rectangular pulse voltage is applied to the second sensor electrode 114. The electric field generated by the rectangular pulse voltage applied to the second sensor electrode 114 is shielded by the shield electrode 116. Due to the electric field shielding effect of the shield electrode 116, the display unit 102 and the touch and fingerprint sensor unit 110 can be driven without interfering with each other. The touch and fingerprint sensor unit 110 is free from the influence of noise associated with the driving of the display unit 102, and high-precision fingerprint detection can be performed. Also, the display unit 102 can display an image in a stable state without being affected by the touch and fingerprint sensor unit 110. ​

[0094] A fourth transparent resin layer 202d is provided on the shield electrode 116. Since the first transparent resin layer 2 02a, the second transparent resin layer 202b, the third transparent resin layer 202c, and the fourth transparent resin layer 202 d are formed by applying a resin composition, the unevenness caused by the first sensor electrode 112, the second sensor electrode 11 4, the first gate electrode 150, the first gate electrode 152, and the common electrode 144a, the common wiring 144b can be filled, and the surface of the fourth transparent resin layer 202d can be flattened.

[0095] As the resin material for forming the first transparent resin layer 202a, the second transparent resin layer 202b, the third transparent resin layer 202c, and the fourth transparent resin layer 202d, a transparent polyimide resin, a transparent polyethylene naphthalate resin, a transparent para-based polyamide resin, etc. are used. Since the transparent polyimide resin and the transparent polyethylene naphthalate resin have inferior gas barrier properties compared to the glass substrate, a gas barrier film formed of a silicon nitride film or the like may be further provided. On the other hand, since the transparent para-based polyamide resin has transparency, heat resistance, and gas barrier properties, it can be suitably used as a material for forming the transparent resin substrate 200. The first transparent resin layer 202a, the second transparent resin layer 202b, the third transparent resin layer 202c, and the fourth transparent resin layer 202d may be formed of the same resin material, or some layers or all layers may be formed of different resin materials. For example, the fourth transparent resin layer 202d can enhance the long-term reliability of the EL element 142 by using a transparent para-based polyamide resin having high rigidity and high gas barrier properties.

[0096] The transparent resin substrate 200 preferably has heat resistance of 150°C to 400°C. Driving When the maximum process temperature (heating temperature) when forming the driving transistor 136 and the selection transistor 138 is 250°C or lower, a para-based polyamide resin can be used as the resin material. By using a para-based polyamide resin, the transparent resin substrate 200 itself can be provided with gas barrier properties. On the other hand, when the maximum process temperature (heating temperature) when forming the driving transistor 136 and the selection transistor 138 is 250°C or higher, it is preferable to use a transparent polyimide resin as the material for forming the transparent resin substrate 200 from the viewpoint of heat resistance. Moreover, nanocellulose fiber (CNF) may be mixed into the transparent polyimide resin and the transparent para-based polyamide resin. The transparent polyimide resin and the transparent para-based polyamide resin mixed with nanocellulose fiber (CNF) have the advantages that the rigidity is improved, the shrinkage is suppressed, and the dimensional stability is improved. To improve the heat resistance of the transparent resin substrate 200, nanocellulose fiber (CNF) may be mixed into at least one of the first transparent resin layer 202a, the second transparent resin layer 202b, the third transparent resin layer 202c, and the fourth transparent resin layer 202d. The mixing ratio of nanocellulose fiber (CNF) with respect to the transparent polyimide resin and the transparent para-based polyamide resin is preferably 1 wt% to 10 wt%. The driving transistor 136 shown in FIG. 16A is a stacked structure of a first gate electrode 150, a first insulating layer 210, a first oxide semiconductor layer 180a, a second insulating layer 212, and a second gate electrode 151.

[0097]

[0098] It has a structure. The first gate electrode 150 is disposed to overlap with the first oxide semiconductor layer 1 80a via the first insulating layer 210, and the second gate electrode 151 is disposed to overlap with the first oxide semiconductor layer 180a via the second insulating layer 212. The first gate electrode 150, the second gate electrode 151, and the first oxide semiconductor layer 180a have regions that overlap with each other, and a channel is formed in the overlapping region of the driving transistor 1 36. Note that for the driving transistor 1 36, the same potential as that of the shield electrode 116 is applied to the first gate electrode 150, and a voltage (a voltage based on a video signal) based on a data signal is applied to the second gate electrode 151.

[0099] The first metal oxide conductive layer 176a and the second metal oxide conductive layer 176b are disposed between the first insulating layer 21 0 and the first oxide semiconductor layer 180a. The first metal oxide conductive layer 176a and the second metal oxide conductive layer 176b are disposed to sandwich the first gate electrode 150 and the second gate electrode 151 from both sides in a plan view. The first metal oxide conductive layer 176a and the second metal oxide conductive layer 176b are provided to be in contact with the lower surface of the first oxide semiconductor layer 180a In the driving transistor 136, the region where the second metal oxide conductive layer 176b is in contact with the first oxide semiconductor layer 1 80a becomes the drain region, and the region where the first metal oxide conductive layer 176a is in contact with the first oxide semiconductor layer 180a becomes the source region.

[0100] The first oxide semiconductor layer 180a is formed using a metal oxide semiconductor material. As the metal oxide semiconductor material, a quaternary metal oxide material, a ternary metal oxide material, a binary metal oxide material, and a unary metal oxide semiconductor material are used. These metal oxide semiconductor materials are It may have a single-layer structure or a laminated structure. Also, the metal oxide semiconductor material may be amorphous or may have crystallinity.

[0101] As the quaternary oxide material, In2O3-Ga2O3-SnO2-ZnO-based oxide material, As the ternary oxide material, In2O3-Ga2O3-SnO2-based oxide material, In2O3- Ga2O3-ZnO-based oxide material, In2O3-SnO2-ZnO-based oxide material, In2 O3-Al2O3-ZnO-based oxide material, Ga2O3-SnO2-ZnO-based oxide material, Ga2O3-Al2O3-ZnO-based oxide material, SnO2-Al2O3-ZnO-based oxide material, as the binary oxide material, In2O3-ZnO-based oxide material, SnO2-ZnO-based acid oxide material, Al2O3-ZnO-based oxide material, MgO-ZnO-based oxide material, SnO2- MgO-based oxide material, In2O3-MgO-based oxide material, as the single-component oxide material, In 2O3-based metal oxide material, SnO2-based metal oxide material, ZnO-based metal oxide material, etc. can be used In addition, silicon (Si), nickel (Ni), tungsten (W), hafnium (Hf), titanium (Ti), tantalum (Ta) may be contained in the above oxide semiconductor. Note that, for example, the In-Ga-Zn-O-based oxide material shown above is an oxide material containing at least In, Ga, and Zn, and there is no particular limitation on its composition ratio. Note that the above quaternary oxide material, ternary oxide material, binary oxide material, single-component oxide material are not limited to those having a stoichiometric composition of the contained oxides, and may be composed of oxide materials having a composition deviated from the stoichiometric composition. Such a metal oxide semiconductor material has a band gap of 3.0 eV or more and is transparent to light in the visible light band. is not limited to those having a stoichiometric composition of the contained oxides, and may be composed of oxide materials having a composition deviated from the stoichiometric composition. Such a metal oxide semiconductor material has a band gap of 3.0 eV or more and is transparent to light in the visible light band. or more and is transparent to light in the visible light band.

[0102] The first metal oxide conductive layer 176a and the second metal oxide conductive layer 176b are conductive. They are made using a metal oxide material, a metal nitride material, or a metal oxynitride material. Having conductivity Examples of the conductive metal oxide material include indium tin oxide (ITO), zinc oxide (Zn O), indium zinc oxide (IZO), tin oxide (SnO2), titanium oxide added with niobium (TiNbO x ), etc. are used. Also, titanium nitride (TiN x ), titanium oxynitride (TiON), etc., which are metal nitrides and metal oxynitrides having transparency and conductivity, can also be used.

[0103] The source electrode (the first metal oxide conductive layer 176a) of the driving transistor 136 is connected to the common electrode 144a. The first metal oxide conductive layer 176a is provided so as to be in contact with the common electrode 144a through the fifth contact hole 166. On the first metal oxide conductive layer 176a, a source wiring 170 formed of a metal film is provided. The source wiring 170 extends to the region of the fifth con tact hole 166. The fifth contact hole 166 is formed so as to penetrate the first insulating layer 210 and the fourth transparent resin layer 202d. The source wiring 170 and the common electrode 144a and the common wiring 144b are formed of a metal material such as titanium (Ti), aluminum (Al ), molybdenum (Mo), copper (Cu), etc.

[0104] The first insulating layer 210 has, for example, a structure in which a first silicon nitride film 214a and a first silicon oxide film 215a are laminated from the side of the fourth transparent resin layer 202d. The second insulating layer 212 ​​, for example, from the side of the first oxide semiconductor layer 180a, a structure in which a second silicon oxide film 215b and a second silicon nitride film 214b are laminated. The first oxide semiconductor layer 180a is provided in contact with the first silicon oxide film 215a and the second silicon oxide film 215b. By providing the first oxide semiconductor layer 180a with its upper and lower surfaces in contact with the silicon oxide film, the generation of oxygen deficiency is suppressed. The first gate electrode 150 and the second gate electrode 151 are made of a metal material such as aluminum (Al), molybdenum (Mo), tungsten (W), zirconium (Zr), copper (Cu), etc. As the aluminum alloy, aluminum-neodymium alloy (AlNd), aluminum-neodymium-nickel alloy (AlNdNi), aluminum-carbon-nickel alloy (AlCNi), copper-nickel alloy (CuNi), etc. can be used. For example, the first gate electrode 150 and the second gate electrode 151 are formed of a film such as aluminum (Al), molybdenum-tungsten (MoW) alloy, molybdenum-titanium (MoTi) alloy, etc. The selection transistor 138 has a structure in which a first gate electrode 152, a first insulating layer 210, a second oxide semiconductor layer 180b, a second insulating layer 212, and a second gate electrode 153 are laminated. In the selection transistor 138, a channel is formed in a region where the second oxide semiconductor layer 180b overlaps with the first gate electrode 152 and the second gate electrode 153. The first gate electrode 152 is provided in contact with the shield electrode 116. The third metal oxide conductive layer 176c and the fourth metal oxide conductive layer 176d are the first insulating layer 210

[0105] The first gate electrode 150 and the second gate electrode 151 are made of a metal material such as aluminum (Al), molybdenum (Mo), tungsten (W), zirconium (Zr), copper (Cu), etc. As the aluminum alloy, aluminum-neodymium alloy (AlNd), aluminum-neodymium-nickel alloy (AlNdNi), aluminum-carbon-nickel alloy (AlCNi), copper-nickel alloy (CuNi), etc. can be used. For example, the first gate electrode 150 and the second gate electrode 151 are formed of a film such as aluminum (Al), molybdenum-tungsten (MoW) alloy, molybdenum-titanium (MoTi) alloy, etc. The selection transistor 138 has a structure in which a first gate electrode 152, a first insulating layer 210, a second oxide semiconductor layer 180b, a second insulating layer 212, and a second gate electrode 153 are laminated. In the selection transistor 138, a channel is formed in a region where the second oxide semiconductor layer 180b overlaps with the first gate electrode 152 and the second gate electrode 153. The first gate electrode 152 is provided in contact with the shield electrode 116. The third metal oxide conductive layer 176c and the fourth metal oxide conductive layer 176d are the first insulating layer 210 The first gate electrode 150 and the second gate electrode 151 are made of a metal material such as aluminum (Al), molybdenum (Mo), tungsten (W), zirconium (Zr), copper (Cu), etc. As the aluminum alloy, aluminum-neodymium alloy (AlNd), aluminum-neodymium-nickel alloy (AlNdNi), aluminum-carbon-nickel alloy (AlCNi), copper-nickel alloy (CuNi), etc. can be used. For example, the first gate electrode 150 and the second gate electrode 151 are formed of a film such as aluminum (Al), molybdenum-tungsten (MoW) alloy, molybdenum-titanium (MoTi) alloy, etc. The selection transistor 138 has a structure in which a first gate electrode 152, a first insulating layer 210, a second oxide semiconductor layer 180b, a second insulating layer 212, and a second gate electrode 153 are laminated. In the selection transistor 138, a channel is formed in a region where the second oxide semiconductor layer 180b overlaps with the first gate electrode 152 and the second gate electrode 153. The first gate electrode 152 is provided in contact with the shield electrode 116. The third metal oxide conductive layer 176c and the fourth metal oxide conductive layer 176d are the first insulating layer 210

[0106] The selection transistor 138 has a structure in which a first gate electrode 152, a first insulating layer 210, a second oxide semiconductor layer 180b, a second insulating layer 212, and a second gate electrode 153 are laminated. In the selection transistor 138, a channel is formed in a region where the second oxide semiconductor layer 180b overlaps with the first gate electrode 152 and the second gate electrode 153. The first gate electrode 152 is provided in contact with the shield electrode 116. The third metal oxide conductive layer 176c and the fourth metal oxide conductive layer 176d are the first insulating layer 210 The selection transistor 138 has a structure in which a first gate electrode 152, a first insulating layer 210, a second oxide semiconductor layer 180b, a second insulating layer 212, and a second gate electrode 153 are laminated. In the selection transistor 138, a channel is formed in a region where the second oxide semiconductor layer 180b overlaps with the first gate electrode 152 and the second gate electrode 153. The first gate electrode 152 is provided in contact with the shield electrode 116.

[0107] The third metal oxide conductive layer 176c and the fourth metal oxide conductive layer 176d are the first insulating layer 210 is provided between the second oxide semiconductor layer 180b and the third metal oxide conductive layer 176c and the fourth metal oxide conductive layer 176d is provided in contact with the lower surface of the second oxide semiconductor layer 180b so as to function as a source region and a drain region. The third metal oxide conductive layer 176c and the fourth metal oxide conductive layer 176d are provided so as to sandwich the first gate electrode 152 and the second gate electrode 153 from both sides in plan view.

[0108] The third metal oxide conductive layer 176c is provided in contact with the lower surface of the data signal line 108. The data signal line 108 has an increased contact area and a reduced contact resistance as compared with the case where it is connected through a contact hole by direct contact with the third metal oxide conductive layer 176c.

[0109] The drain wiring 173 is provided in contact with the upper surface of the fourth metal oxide conductive layer 176d. The second oxide semiconductor layer 180b is provided so as to cover the upper surfaces of the fourth metal oxide conductive layer 176d and the drain wiring 173. The drain wiring 173 is connected to the second gate electrode 151 of the driving transistor 136 through the seventh contact hole 168.

[0110] The capacitor element 140 shown in FIG. 16B is formed in a region where the drain wiring 173, the fourth metal oxide conductive layer 176d, the first insulating layer 210, the fourth transparent resin layer 202d, and the common wiring 144b are stacked. The capacitor element 140 has the fourth metal oxide conductive layer 176d and the drain wiring 173 forming one capacitor electrode, and the common wiring 144b forming the other capacitor electrode. The capacitor element 140 is provided between the drain electrode of the selection transistor 138 and the common wiring 144b.

[0111] ​The driving transistor 136 and the selection transistor 138 are covered with the third insulating layer 216. . The third insulating layer 216 is formed of an organic resin material such as acrylic resin, polyimide resin, epoxy resin, polysiloxane resin, polyamide resin, etc. The third insulating layer 216 is formed of these resins to have a function as a planarization film that embeds the driving transistor 136 and the selection transistor 138. The third insulating layer 216 may be formed of an inorganic insulating film such as a silicon oxide film or a silicon nitride film.

[0112] As shown in FIG. 16A, the EL element 142 includes, from the side of the transparent resin substrate 200, a first electrode 220 corresponding to the cathode, an electron transport layer 222 (a first electron transport layer 222a and a second electron transport layer 22 2b), an electron injection layer 224, a light emitting layer 226, a hole transport layer 228, a hole injection layer 230, and a second electrode 232 corresponding to the anode stacked. For convenience, the EL element has a structure in which a hole transport layer, a light emitting layer, an electron transport layer, and a cathode are stacked from the anode side in this order, which is called a forward stacking structure, and a case where the stacking order is reversed may be called a reverse stacking structure. The EL element 142 shown in FIG. 16A is classified as a reverse stacking structure. The first electrode 220 is continuous from the first metal oxide conductive layer 176a, and the first electron transport layer 222a has a structure continuous from the first oxide semiconductor layer 180a. Having such a structure forms a state in which the driving transistor 136 and the EL element 142 are connected without using a contact hole. The first electrode 220 corresponding to the cathode is formed of the same metal oxide conductive material as the first metal oxide conductive layer 17

[0113] 6a. Also, the first electron transport layer 222a is formed of the same oxide semiconductor material as the first oxide semiconductor layer 180a. ​

[0114] In the region where the EL element 142 is formed, a third insulating layer 216 and a second insulating layer 212 have a third opening 234 provided therein. Through the third opening 234, the upper surface of the first electron transport layer 222a disposed on the upper layer side of the first electrode 220 is exposed. On the first electron transport layer 222a, a second electron transport layer 222b, an electron injection layer 224, a light emitting layer 226, a hole transport layer 228, a hole injection layer 230, and a second electrode 232 as an anode are laminated. The region where these laminated bodies overlap with the first electrode 220 becomes the light emitting region of the EL element 142. 0 becomes the light emitting region of the EL element 142. 0 and the first electrode 220 is the light emitting region of the EL element 142.

[0115] On the upper layer of the first electrode 220, a first electron transport layer 222a formed of the same layer as the first oxide semiconductor layer 180a is provided. The first electron transport layer 222a preferably has a band gap of 3.0 eV or more and has translucency with respect to visible light. The second electron transport layer 222b is formed of a metal oxide material containing one or more elements selected from indium oxide, zinc oxide, gallium (Ga) oxide, tin (Sn) oxide, magnesium (Mg) oxide, silicon (Si) oxide, hafnium (Hf) oxide, tantalum (Ta) oxide, and niobium (Nb) oxide. These metal oxide materials have a band gap of 3.0 eV or more and have translucency with respect to visible light. The second electron transport layer 222b is formed with a film thickness of 50 nm to 1000 nm. The EL element 142 is prevented from short-circuiting between the first electrode 220 and the second electrode 232 by the second electron transport layer 222b having a film thickness within this range. 、indium oxide, zinc oxide, gallium (Ga) oxide, tin (Sn) oxide, magnesium (Mg) oxide, silicon (Si) oxide, hafnium (Hf) oxide, tantalum (Ta) oxide, niobium (Nb) oxide. These metal oxide materials have a band gap of 3.0 eV or more and have translucency with respect to visible light. The second electron transport layer 222b is formed with a film thickness of 50 nm to 1000 nm. The EL element 142 is prevented from short-circuiting between the first electrode 220 and the second electrode 232 by the second electron transport layer 222b having a film thickness within this range. oxide, niobium (Nb) oxide. These metal oxide materials have a band gap of 3.0 eV or more and have translucency with respect to visible light. The second electron transport layer 222b is formed with a film thickness of 50 nm to 1000 nm. The EL element 142 is prevented from short-circuiting between the first electrode 220 and the second electrode 232 by the second electron transport layer 222b having a film thickness within this range. nm. The EL element 142 is prevented from short-circuiting between the first electrode 220 and the second electrode 232 by the second electron transport layer 222b having a film thickness within this range. nm. The EL element 142 is prevented from short-circuiting between the first electrode 220 and the second electrode 232 by the second electron transport layer 222b having a film thickness within this range. nm. The EL element 142 is prevented from short-circuiting between the first electrode 220 and the second electrode 232 by the second electron transport layer 222b having a film thickness within this range.

[0116] The carrier concentration of the second electron transport layer 222b is the carrier concentration of the first electron transport layer 222a It is preferably 1 / 10 or less, more preferably 1 / 100 or less. Specifically, the second The carrier concentration of the electron transport layer 222b is 10 13 / cm 3 ~10 17 / cm 3 whereas the carrier concentration of the first electron transport layer 222a is 10 15 / cm 3 ~10 19 / cm 3 in the range, and the difference in the carrier concentrations of both is preferably at least one digit, more preferably at least two digits, as described above. The first electron transport layer 222a has a carrier concentration of 10 15 / cm 3 ~10 19 / cm 3 in the range, so that resistance loss can be reduced and an increase in driving voltage can be suppressed when connecting the driving transistor 136 and the EL element 142. When the carrier concentration of the second electron transport layer 222 b is 10 20 / cm 3 or more, the excited state in the light-emitting layer 226 is deactivated and the luminous efficiency decreases. On the other hand, when the carrier concentration of the second electron transport layer 222b is less than 10 13 / cm 3 the carriers supplied to the light-emitting layer 226 are reduced and sufficient luminance cannot be obtained. Thus, by providing the first electron transport layer 222a in contact with the second electron transport layer 222b and making the carrier concentrations of both different, an increase in driving voltage can be prevented and the luminous efficiency of the EL element 142 can be increased.

[0117] The carrier concentrations of the first electron transport layer 222a and the second electron transport layer 222b can be controlled by the concentration of oxygen vacancies in the oxide semiconductor. The oxygen vacancies in the oxide semiconductor act as donors. It works. When the oxygen deficiency density of the oxide semiconductor is increased, the carrier concentration increases, and when the oxygen deficiency density is decreased, the carrier concentration is decreased. The oxygen deficiency of the oxide semiconductor can be increased, for example, by acting on hydrogen, and can be decreased by supplying oxygen.

[0118] In the EL element, the electron injection layer is used to reduce the energy barrier for injecting electrons from the cathode to the electron transport layer. The electron injection layer 224 is provided to facilitate the injection of electrons from the second electron transport layer 222b into the light emitting layer 226. The electron injection layer 224 is provided between the second electron transport layer 222b and the light emitting layer 226.

[0119] A material with a small work function is used for the electron injection layer 224. The electron injection layer 224 is formed of, for example, , C12A7(12CaO·7Al2O3) electride, Mg 0.3 Zn 0.7 O, Zn 0.7 Si 0.3 O x oxide semiconductor material containing. The electron injection layer 224 is formed with a thickness of 1 nm to 100 nm. By using such an electron injection layer 224, the amount of electrons injected from the second electron transport layer 222b into the light emitting layer 226 can be increased, and the luminous efficiency can be enhanced.

[0120] Various light emitting materials can be applied to the light emitting layer 226. The light emitting layer 226 is formed of, for example, fluorescent materials, phosphorescent materials that emit phosphorescence, and thermally activated delayed fluorescence (TADF: Thermally Activated De layed Fluorescence) materials. The light emitting layer 226 is included in the pixel 104 ​​Materials with different emission colors are used corresponding to a plurality of sub-pixels 105. To make the light-emitting layer 226 a white light-emitting layer, a structure in which a blue light-emitting layer and a yellow light-emitting layer are laminated is used. The light-emitting layer 22 6 can be manufactured by a vapor deposition method, a transfer method, a spin coating method, a spray coating method, a gravure printing method, or the like. The film thickness of the light-emitting layer 226 may be appropriately selected, and for example, it is provided in the range of 10 nm to 100 nm. ~100nm.

[0121] The hole transport layer 228 is formed of, for example, an arylamine-based compound, an amine compound containing a carbazole group, and an amine compound containing a fluorene derivative. The hole transport layer 228 is manufactured by a vacuum vapor deposition method, a coating method, or the like. The hole transport layer 228 has a film thickness of 10 nm to 500 nm. When the hole injection layer 230 is formed, the hole transport layer 228 may be omitted .

[0122] The hole injection layer 230 is formed using metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tantalum sten oxide, and manganese oxide. Also, the hole injection layer 230 is formed using materials such as phthalocyanine (H2Pc), copper (II) phthalocyanine (abbreviation: CuPc) , and hexaazatriphenylene hexacarbonitrile (HAT-(CN)6). The hole injection layer 230 is formed with a thickness of 1 nm to 100 nm.

[0123] The second electrode 232 corresponding to the anode is preferably formed of a material having a work function of 4.0 eV or more. The second electrode 232 is, for example, indium tin oxide (ITO), indium ium zinc oxide (IZO), tungsten oxide (WO ) and zinc oxide (ZnO) contained in the oxide x . It is formed using a conductive metal oxide such as indium (IWZO). Since the EL element 142 is of the bottom emission type, it is preferable that the second electrode 232 has a light reflecting surface. Since the EL element 142 is of the bottom emission type, it is preferable that the second electrode 232 has a light reflecting surface. Since the above-mentioned conductive metal oxide has translucency, it is preferable to form a light reflecting surface by laminating a metal film such as aluminum (Al) or silver (Ag). ) etc.

[0124] Although omitted in FIGS. 16A and 16B, a passivation film for blocking the intrusion of oxygen and moisture may be provided on the EL element 142. Although omitted in FIGS. 16A and 16B, a passivation film for blocking the intrusion of oxygen and moisture may be provided on the EL element 142.

[0125] Thus, the sub-pixel 105 according to the present embodiment has a structure in which the n-channel driving transistor 13 6 and the EL element 142 are connected. The EL element 142 has a structure of the bottom emission type and emits light toward the side of the shield electrode 116. Since the EL element 142 has an electron transport layer and an electron injection layer formed of an inorganic metal oxide semiconductor material, it has a structure for suppressing the deterioration of the light emission characteristics due to moisture (H2O) and oxygen (O2). and oxygen (O2). and oxygen (O2).

[0126] FIG. 17 shows a plan layout diagram showing another configuration of the sub-pixel 105. The sub-pixel 105 shown in FIG. 17 has a structure in which the second gate electrode 153 of the selection transistor 138 and the scanning signal line 106a are formed of the same conductive layer. A second auxiliary electrode 2 07 is provided on the second sensor electrode 114 (in FIG. 17, the pattern of the second sensor electrode 114 is omitted and only the second auxiliary electrode 207 is shown). The first light shielding layer 208a and the second light shielding layer 208b are formed of the same metal film as the second auxiliary electrode 207 and are provided on the second sensor electrode 114. 207 is shown). The first light shielding layer 208a and the second light shielding layer 208b are formed of the same metal film as the second auxiliary electrode 207 and are provided on the second sensor electrode 114. electrode 207 and are provided on the second sensor electrode 114.

[0127] FIG. 18 shows the planar layout of sub-pixel 105, and shows a mode in which the connection structure between the driving transistor 136 and the common electrode 144a is different from that of the sub-pixel 105 shown in FIG. 15. Also, FIG. 19A shows a cross-sectional structure corresponding to the D5-D6 lines shown in FIG. 18, and FIG. 19B shows a cross-sectional structure corresponding to the D7-D8 lines. As shown in FIGS. 18 and 19A, the source wiring 170 of the driving transistor 136 is connected to the common electrode 144

[0128] a by a connection wiring 172 formed of the same conductive layer as the second gate electrode 151. The connection wiring 172 is connected to the source wiring 170 by an eighth contact hole 171 formed in the second insulating layer 212, and is connected to the common electrode 1 44a by a fifth contact hole 166 formed in the second insulating layer 212, the first insulating layer 210, and the fourth transparent resin layer 202d. Even with such a connection structure, the first sub-pixel shown in the equivalent circuit of FIG. 4 can be realized for each of the 105r, the second sub-pixel 105g, and the third sub-pixel 105b.

[0129] FIG. 20 shows the planar layout of sub-pixel 105, and shows a mode in which the connection structure between the selection transistor 138 and the data signal line 108 is different from that of the sub-pixel 105 shown in FIG. 18. Also, FIG. 21A shows a cross-sectional structure corresponding to the D9-D10 lines shown in FIG. 20, and FIG. 21B shows a cross-sectional structure corresponding to the D11- D12 lines.

[0130] As shown in FIGS. 20 and 21B, the source electrode 174 of the selection transistor 138 is connected to the data signal line 108 formed of the same conductive layer as the second gate electrode 153. The data signal line 108 is provided on the second insulating layer 212 and is connected via a ninth contact hole 175. ​​​​​​​It is connected to the source electrode 174. The scanning signal line 106a is on the lower layer side than the first insulating layer 210. It is provided. Therefore, even when the second insulating layer 212 is formed thinly, the data signal line 108 provided in the same layer as the second gate electrode 153 can be provided so as to cross the scanning signal line 106a, and short - circuit at the crossing part can be prevented.

[0131] 1 - 6. Sealing structure FIG. 22A shows an example of the connection structure between the first sensor electrode 112 and the lead - out wiring 147. The lead - out wiring 147 is a wiring that connects the first sensor electrode 112 and the second connection terminal 146b. The first sensor electrode 112 is connected to the lead - out wiring 147 in the outer region of the display unit 102. The lead - out wiring 147 is provided on the fourth transparent resin layer 202d, similar to the second connection terminal 146b. Similar to the structure shown in FIG. 5, the shield electrode 116 is provided to extend down to the second connection terminal 14 6b. The second connection terminal 146b is provided above the shield electrode 116, so that it can withstand the crimping process when connecting the flexible circuit board 126, and it can prevent the depression, deformation, and peeling of the second connection terminal 146b.

[0132] The shield electrode 116 has a first opening 158. A first contact hole 159 having a hole diameter smaller than the opening diameter of the first opening 158 is provided in this part. The first contact hole 159 penetrates the fourth transparent resin layer 202d, the third transparent resin layer 202c, and the second transparent resin layer 202b, and exposes the upper surface of the first sensor electrode 112. The lead - out wiring 14 7 extends from the second connection terminal 146b to the first contact hole 159 and is connected to the first sensor electrode 112.

[0133] ​​​​ On the fourth transparent resin layer 202d, a first insulating layer 210, a second insulating layer 212, and a third insulating layer 216 are provided. A second electrode 232 is provided on the third insulating layer 216. FIG. 22 shows a state in which a sealing layer 236 is provided on the upper layer side of the second electrode 232. The structure of the sealing layer 236 is various. For example, it has a structure in which a silicon carbonitride film 237a, a silicon nitride film 238, and a silicon carbonitride film 237b are laminated.

[0134] The lead wiring 147 extends outward (to the end side of the transparent resin substrate 200) from the region covered by the third insulating layer 216 and the sealing layer 236, and is connected to the second connection terminal 146b. The lead wiring 147 and the second connection terminal 146b are formed of the same conductive layer and are formed in one continuous pattern.

[0135] FIG. 22A shows an aspect having a dividing region 240 in a region near the end of the transparent resin substrate 200. The transparent resin substrate 200 is provided on a support substrate (not shown) in the manufacturing process and is divided at the dividing region 240 when it is separated into individual panels. In the dividing region 240, continuous opening grooves are formed so as to surround the display panel. The opening grooves are formed, for example, by laser processing. The transparent resin substrate 200 is peeled from the support substrate by laser ablation processing after forming the dividing region 240.

[0136] FIG. 22B shows a structure in which the shield electrode 116 does not extend to the region of the second connection terminal 146b as shown in FIG. 7. In this structure, it is preferable that the first insulating layer 210 is provided below the lead wiring 147 and the second connection terminal 146b. The lead wiring 147 is the first ​​​​​​​​​​The insulating layer 210, the fourth transparent resin layer 202d, the third transparent resin layer 202c, and the second transparent resin layer are connected to the first sensor electrode 112 through the first contact hole 159 that penetrates the second transparent resin layer 202b .

[0137] Even when the shield electrode 116 is not provided below the second connection terminal 146b, the first insulating layer 210 is provided, so that it can withstand the crimping process when connecting the flexible circuit board 126, and can prevent the second connection terminal 146b from being sunken, deformed, and peeled off. Although not shown, the same effect can be obtained even if both the first insulating layer 210 and the shield electrode 116 are provided on the lower layer side of the second connection terminal 146b. Also, although not shown in FIGS. 22A and 22B, the structure of the first connection terminal 146a in the terminal portion is the same as that of the second connection terminal 146b, and the same effect can be obtained.

[0138] FIGS. 23A and 23B show a state in which the configuration of the second insulating layer 212 is different from that in FIGS. 22A and 22B. Regarding the description of FIGS. 23A and 23B, the description will be centered on the parts different from FIGS. 22A and 22B.

[0139] FIG. 23A has a structure in which the shield electrode 116 is provided below the second connection terminal 146b, and has a structure in which the second insulating layer 212 is provided on the lead wiring 147. The second insulating layer 212 covers the upper surface and side surface of the lead wiring 147, and is provided in contact with the fourth transparent resin layer 202d in a region where the lead wiring 147 is not provided, although not shown. The second insulating layer 212 extends to the outside of the third insulating layer 216 (the side of the second connection terminal 146b). The second insulating layer 212 has a region in contact with the sealing layer 236 outside the third insulating layer 216. ​​​

[0140] The second insulating layer 212 and the sealing layer 236 include an insulating film made of an inorganic insulating material. The second insulating layer 212 and the sealing layer 236 are provided in contact with the outside of the third insulating layer 216. As shown in FIG. 16A, the EL element 142 is formed as follows. The layer that constitutes the third insulating layer 216 is provided in contact with the EL element 142. 16 is sandwiched between the second insulating layer 212 and the sealing layer 236, and the end of the third insulating layer 216 is The second insulating layer 212 and the sealing layer 236 are disposed on the inner side of the outer end of the EL element 1. In addition, the second insulating layer 212 can improve the performance of preventing deterioration of the wiring 42. In addition, since it has a function as a protective film for the wiring 147, deterioration and damage of the wiring can be prevented. Other structures are the same as those in Fig. 22A, and similar effects can be obtained.

[0141] FIG. 23B shows a structure in which a first insulating layer 210 is provided under the second connection terminal 146b. In addition, a second insulating layer 212 is provided on the lead-out wiring 147. 23A, the sealing performance can be improved. The other structures are the same as those shown in FIG. 22B. In addition, although not shown in FIG. 23B, the same effect can be obtained. The first insulating layer 210 and the shield electrode 116 are both provided on the lower layer side of the second connection terminal 146b. The same effect can be obtained even if the

[0142] 24A and 24B show that the configurations of the first insulating layer 210 and the second insulating layer 212 are the same as those in FIG. 23A and FIG. 24A and 24B are different from those in FIG. 23A and The following description will focus on the differences from FIG. 23B.

[0143] FIGS. 24A and 24B have a structure in which a shield electrode 116 is provided under the second connection terminal 146b, and have a structure in which a first insulating layer 210 and a second insulating layer 212 are provided under the lead wiring 147 and the second connection terminal 146b. Since the first insulating layer 210 and the second insulating layer 212 are provided on the entire lower surface of the second connection terminal 146b, the flexible circuit board 126 can withstand the crimping process when connecting, and the second connection terminal 146b can be more resistant to sinking, deformation, and peeling. 0 and the second insulating layer 212 are provided. Since the first insulating layer 210 and the second insulating layer 212 are provided on the entire lower surface of the second connection terminal 146b, the flexible circuit board 12 6 can withstand the crimping process when connecting, and the second connection terminal 146b can be more resistant to sinking, deformation, and peeling. 6 can withstand the crimping process when connecting, and the second connection terminal 146b can be more resistant to sinking, deformation, and peeling. and peeling.

[0144] Also, in the region outside the third insulating layer 216, there is a region where the sealing layer 236 is in contact with the lead wiring 147 and also in contact with the second insulating layer 212 (not shown), so the sealing performance can be improved, and deterioration of the EL element 142 can be prevented. and also in contact with the second insulating layer 212 (not shown), so the sealing performance can be improved, and deterioration of the EL element 142 can be prevented. and deterioration of the EL element 142 can be prevented.

[0145] FIGS. 25A and 25B show an aspect in which the configuration of the lead wiring 147 is different from that in FIGS. 22A and 22B. The difference between FIGS. 25A and 25B lies in the presence or absence of the shield electrode 116 under the second connection terminal 146b. Regarding the description of FIGS. 25A and 25B, the description will be centered on the parts different from FIGS. 22A and 22B. FIGS. 25A and 25B show an aspect in which the configuration of the lead wiring 147 is different from that in FIGS. 22A and 22B. The difference between FIGS. 25A and 25B lies in the presence or absence of the shield electrode 116 under the second connection terminal 146b. Regarding the description of FIGS. 25A and 25B, the description will be centered on the parts different from FIGS. 22A and 22B. 16. Regarding the description of FIGS. 25A and 25B, the description will be centered on the parts different from FIGS. 22A and 22B. different from FIGS. 22A and 22B.

[0146] As shown in FIGS. 25A and 25B, the connection structure between the first sensor electrode 112 and the second connection terminal 146b has a structure connected by a plurality of contact holes and a plurality of lead wirings. Specifically, a contact hole 169a is formed in the second transparent resin layer 202b, the first lead wiring 147a is connected to the first sensor electrode 112, a contact hole 169b is formed in the third transparent resin layer 202c, and the second lead wiring 147b is connected to the first lead wiring As shown in FIGS. 25A and 25B, the connection structure between the first sensor electrode 112 and the second connection terminal 146b has a structure connected by a plurality of contact holes and a plurality of lead wirings. Specifically, a contact hole 169a is formed in the second transparent resin layer 202b, the first lead wiring 147a is connected to the first sensor electrode 112, a contact hole 169b is formed in the third transparent resin layer 202c, and the second lead wiring 147b is connected to the first lead wiring As shown in FIGS. 25A and 25B, the connection structure between the first sensor electrode 112 and the second connection terminal 146b has a structure connected by a plurality of contact holes and a plurality of lead wirings. Specifically, a contact hole 169a is formed in the second transparent resin layer 202b, the first lead wiring 147a is connected to the first sensor electrode 112, a contact hole 169b is formed in the third transparent resin layer 202c, and the second lead wiring 147b is connected to the first lead wiring As shown in FIGS. 25A and 25B, the connection structure between the first sensor electrode 112 and the second connection terminal 146b has a structure connected by a plurality of contact holes and a plurality of lead wirings. Specifically, a contact hole 169a is formed in the second transparent resin layer 202b, the first lead wiring 147a is connected to the first sensor electrode 112, a contact hole 169b is formed in the third transparent resin layer 202c, and the second lead wiring 147b is connected to the first lead wiring As shown in FIGS. 25A and 25B, the connection structure between the first sensor electrode 112 and the second connection terminal 146b has a structure connected by a plurality of contact holes and a plurality of lead wirings. Specifically, a contact hole 169a is formed in the second transparent resin layer 202b, the first lead wiring 147a is connected to the first sensor electrode 112, a contact hole 169b is formed in the third transparent resin layer 202c, and the second lead wiring 147b is connected to the first lead wiring It is connected to 147a, and a contact hole 169c is formed in the fourth transparent resin layer 202d. It has a structure in which the third lead wiring 147c is connected to the second lead wiring 147b.

[0147] A contact hole 169a provided to connect the first lead wiring 147a to the first sensor electrode 112, and a contact hole 169b for connecting the second lead wiring 147b to the first lead wiring 147a are in different positions. Also. The position of the contact hole 169b for connecting the second lead wiring 147b to the first lead wiring 147a, and the position of the contact hole 169c for connecting the third lead wiring 147c to the second lead wiring 147b are different. In this way, by shifting the positions of the plurality of contact holes, the depth of the contact hole per stage can be made shallower, and the connection of the lead wiring can be surely formed. The configuration shown in FIGS. 25A and 25B can be applied to the configurations shown in FIGS. 23A and 23B, FIGS. 24A and 24B. 1-7. Flexible Circuit Board and Integrated Circuit FIG. 26 shows the configuration of the transparent resin substrate 200 provided with the display unit 102 and the touch and fingerprint sensor unit 110, and the configuration of the flexible circuit board 126 provided with the second drive circuit 128. The flexible circuit board 126 includes a third connection terminal 148a, a fourth connection terminal 148b, a fifth connection terminal 148c, a sixth connection terminal 149, and wiring groups 129a and 129b provided on a film base material 127. The wiring group 129 includes the third connection terminal 148a to the fifth connection terminal 148

[0148] The configuration shown in FIGS. 25A and 25B can be applied to the configurations shown in FIGS. 23A and 23B, FIGS. 24A and 24B. It can be applied to the configurations shown in FIGS. 23A and 23B, FIGS. 24A and 24B.

[0149] 1-7. Flexible Circuit Board and Integrated Circuit FIG. 26 shows the configuration of the transparent resin substrate 200 provided with the display unit 102 and the touch and fingerprint sensor unit 110, and the configuration of the flexible circuit board 126 provided with the second drive circuit 128. The flexible circuit board 126 includes a third connection terminal 148a, a fourth connection terminal 148b, a fifth connection terminal 148c, a sixth connection terminal 149, and wiring groups 129a and 129b provided on a film base material 127. The wiring group 129 includes the third connection terminal 148a to the fifth connection terminal 148 shown.

[0150] The flexible circuit board 126 includes a third connection terminal 148a, a fourth connection terminal 148b, a fifth connection terminal 148c, a sixth connection terminal 149, and wiring groups 129a and 129b provided on a film base material 127. a, the fourth connection terminal 148b, the fifth connection terminal 148c, the sixth connection terminal 149, and wiring groups 129a, 129b. The wiring group 129 includes the third connection terminal 148a to the fifth connection terminal 148 a to the fifth connection terminal 148 Between c and the second drive circuit 128, and between the second drive circuit 128 and the sixth connection terminal 149 Connect. The third connection terminal 148a is connected to the first connection terminal 146a on the side of the transparent resin substrate 200 Continued, the fourth connection terminal 148b is connected to the second connection terminal 146b on the side of the transparent resin substrate 200 Continued, the fifth connection terminal 148c is connected to a connection terminal connected to the first drive circuit 118 on the side of the transparent resin substrate 200 The sixth connection terminal 149 is connected to an external circuit that drives the display device 100 with a touch and fingerprint sensor 00.

[0151] As shown in FIG. 5, the second drive circuit 128 is a complex integrated circuit in which a first scan signal line drive circuit block, a data Signal line drive circuit block, and a touch and fingerprint sensor detection circuit block are integrated Integrated circuit. The second drive circuit 128 is mounted on the surface of the film base material 127 by COF (Chip on Film) Of.

[0152] FIG. 27 shows a plan view of the flexible circuit board 126. The flexible circuit board 126 Is formed on the first side of the film base material 127 formed of polyimide or the like with a third connection terminal 148a, A fourth connection terminal 148b, and a fifth connection terminal 148c are provided, and a sixth connection terminal 149 is provided on the second side opposite to the first side Side. The second drive circuit 128 is mounted in a central region of the film base material 127. FIG. 27 shows the region where the second drive circuit 128 is mounted with a dotted line Of. .

[0153] A wiring group 129a is provided in the region between the third connection terminal 148a, the fourth connection terminal 148b, and the fifth connection terminal 148c and the second drive Circuit 128. A wiring group 129b is provided in the region between the second drive circuit 128 and the sixth connection Terminal 149. Each of the wiring groups 129b The wiring extends from the sixth connection terminal 149 to the area where the pad 135 of the second drive circuit 128 is located. Each wiring in the wiring group 129a extends from the area where the pad 135 of the second drive circuit 128 is located to the third connection terminal 148a, the fourth connection terminal 148b, and the fifth connection terminal 148c.

[0154] The pad 135 of the second drive circuit 128 is provided corresponding to the functional blocks. That is, the pad 135 of the second drive circuit 128 is arranged in the area of each circuit block corresponding to the scan signal line drive circuit block 130, the data signal line drive circuit block 132, and the touch and fingerprint sensor detection circuit block 134. The connection between each wiring in the wiring groups 129a and 129b and the pad 135 is made by a conductive material. Also, the connection between the third connection terminal 148 a, the fourth connection terminal 148b, and the fifth connection terminal 148c and the connection terminals on the side of the transparent resin substrate 200 is also made by a conductive material.

[0155] FIG. 28 corresponds to the configuration of the switching circuit 120 and the first sensor electrode 112 shown in FIG. 7, and shows a state in which the flexible circuit board 126 is overlaid on the terminal portion 122 and the connection terminals are connected with a conductive material. The flexible circuit board 126 is provided with a third connection terminal 148 a and a fourth connection terminal 148b corresponding to the first connection terminal 146a and the second connection terminal 146b provided on the terminal portion 122 of the transparent resin substrate 200. As described with reference to FIG. 5, the first connection terminal 146a is connected to the switching circuit 120, and the second connection terminal 146b is connected to the first sensor electrode 112 through the first contact hole 159 provided in the area inside the first opening 158 of the shield electrode 116. a and the fourth connection terminal 148b. As described with reference to FIG. 5, the first connection terminal 146a is connected to the switching circuit 120, and the second connection terminal 146b is connected to the first sensor electrode 112 through the first contact hole 159 provided in the area inside the first opening 158 of the shield electrode 116.

[0156] The first connection terminal 146a and the third connection terminal 148a, and the second connection terminal 146b and the fourth connection terminal 148b are arranged to face each other in a separated state. At least one conductive particle 242 is provided between the first connection terminal 146a and the third connection terminal 148a. At least one conductive particle 242 is held in a state of being pressure-deformed between the first connection terminal 146a and the third connection terminal 148a. At least one conductive particle 242 is in contact with the first connection terminal 146a and the third connection terminal 148a. The first connection terminal 146a and the third connection terminal 148a are electrically connected by at least one conductive particle 242. Conductive particles are similarly provided between the second connection terminal 146b and the fourth connection terminal 148b. Note that it is preferable that at least one conductive particle 242 is composed of a plurality of conductive particles.

[0157] The conductive particles 242 are arranged on the first connection terminal 146a (or the third connection terminal 148a) in a state of being dispersed in the resin 244. In this state, the first connection terminal 146a and the third connection terminal 148a are opposed to each other, and the distance between them is narrowed to such an extent that the conductive particles 242 are pressure-deformed, so that the conductive particles 242 can protrude from the resin 244 and come into direct contact with the first connection terminal 146a and the third connection terminal 148a.

[0158] It is preferable that a plurality of conductive particles 242 are contained in the resin 244. For example, it is preferable that 2 to 7 conductive particles 242 are contained in one region of the resin 244. As a result, a plurality of conductive particles 242 are interposed between the first connection terminal 146a and the third connection terminal 148a, and reliable electrical connection can be achieved.

[0159] As shown in FIG. 28, the resin 244 containing a plurality of conductive particles 242 is arranged so as to be dispersed at a plurality of positions between the first connection terminal 14 6a and the third connection terminal 148a. In other words , between the first connection terminal 146a and the third connection terminal 148a, the conductive particles 242 are arranged in a state where their number and position are controlled. Thus, in the region between the first connection terminal 146a and the third connection terminal 148a, by arranging the conductive particles 242 in a state where their number and position are controlled , an electrical connection state can be surely formed, and short-circuiting with adjacent connection terminals can be prevented. Such a configuration effectively acts when the pitch of the connection terminals becomes narrow .

[0160] The diameter of the conductive particles 242 is preferably in the range of 2 μm or more and 10 μm or less. With such a size, even when the pitch of the connection terminals becomes 30 μm or less, short-circuiting between adjacent connection terminals can be prevented. Also, as shown in FIG. 28, when the resin 244 containing the conductive particles 242 is arranged so as to be discrete at a plurality of positions between the connection terminals, the interval between the discrete positions is preferably 5 μm or more. By arranging in such a manner, the resin 244 containing the conductive particles 242 can be prevented from protruding from the first connection terminal 146a and the third connection terminal 148a , and the interval between the first connection terminal 146a and the third connection terminal 148a can be kept constant .

[0161] The structure, shape, and material of the conductive particles 242 are not limited. For example, a particle core coated with a high-hard resin material with a rubber -like elastic resin, or a particle core coated with a high-hard inorganic material with a rubber-like inorganic elastic body ​​It may be metal-coated particles coated with a metal such as nickel (Ni), copper (Cu), gold (Au), etc. Also, the shape of the conductive particles 242 is not limited to spherical, and may be oblong or compact type. It may be.

[0162] As the resin 244, a curable resin material is used. The curable resin material includes a radical polymerization type resin. As the radical polymerization type resin material, it is preferably a (meth)acrylic monomer or a (meth)acrylic rate oligomer, and more preferably one having an ester type bond. The (meth)acrylic oligomer has at least one or more (meth)acryloyl groups, and for example, epoxy acrylate, urethane acrylate, polyester acrylate, polybutadiene acrylate, polyol acrylate, polyether acrylate, silicone resin acrylate, melamine acrylate, etc. can be used. It may be monofunctional or polyfunctional, but it is more preferably to contain a polyfunctional monomer or oligomer. The curable resin material may be composed of two or more selected from (meth)acrylate monomers and (meth)acrylate oligomers. The (meth)acrylic oligomer has at least one or more (meth)acryloyl groups, and for example, epoxy acrylate, urethane acrylate, polyester acrylate, polybutadiene acrylate, polyol acrylate, polyether acrylate, silicone resin acrylate, melamine acrylate, etc. can be used. The (meth)acrylic oligomer has at least one or more (meth)acryloyl groups, and for example, epoxy acrylate, urethane acrylate, polyester acrylate, polybutadiene acrylate, polyol acrylate, polyether acrylate, silicone resin acrylate, melamine acrylate, etc. can be used. The (meth)acrylic oligomer has at least one or more (meth)acryloyl groups, and for example, epoxy acrylate, urethane acrylate, polyester acrylate, polybutadiene acrylate, polyol acrylate, polyether acrylate, silicone resin acrylate, melamine acrylate, etc. can be used. The (meth)acrylic oligomer has at least one or more (meth)acryloyl groups, and for example, epoxy acrylate, urethane acrylate, polyester acrylate, polybutadiene acrylate, polyol acrylate, polyether acrylate, silicone resin acrylate, melamine acrylate, etc. can be used. It may be monofunctional or polyfunctional, but it is more preferably to contain a polyfunctional monomer or oligomer. The curable resin material may be composed of two or more selected from (meth)acrylate monomers and (meth)acrylate oligomers. It may be monofunctional or polyfunctional, but it is more preferably to contain a polyfunctional monomer or oligomer. The curable resin material may be composed of two or more selected from (meth)acrylate monomers and (meth)acrylate oligomers. The curable resin material may be composed of two or more selected from (meth)acrylate monomers and (meth)acrylate oligomers. It may be composed of two or more selected from (meth)acrylate monomers and (meth)acrylate oligomers.

[0163] Although not shown, a second resin may be provided around the resin 244. As the second resin, a curable resin material is used. As the curable resin material, fluorene-based acrylate can be used, and an ene compound having two or more functional groups selected from the group consisting of an allyl ether group, a vinyl ether group, an acrylate group, and a methacrylate group in the molecule or a mixture of two or more of the above-mentioned ene compounds, and an ene / thiol-based curable resin containing a thiol compound having two or more thiol groups in one molecule is treated with an oxidizing compound. As the second resin, a curable resin material is used. As the curable resin material, fluorene-based acrylate can be used, and an ene compound having two or more functional groups selected from the group consisting of an allyl ether group, a vinyl ether group, an acrylate group, and a methacrylate group in the molecule or a mixture of two or more of the above-mentioned ene compounds, and an ene / thiol-based curable resin containing a thiol compound having two or more thiol groups in one molecule is treated with an oxidizing compound. As the curable resin material, fluorene-based acrylate can be used, and an ene compound having two or more functional groups selected from the group consisting of an allyl ether group, a vinyl ether group, an acrylate group, and a methacrylate group in the molecule or a mixture of two or more of the above-mentioned ene compounds, and an ene / thiol-based curable resin containing a thiol compound having two or more thiol groups in one molecule is treated with an oxidizing compound. As the curable resin material, fluorene-based acrylate can be used, and an ene compound having two or more functional groups selected from the group consisting of an allyl ether group, a vinyl ether group, an acrylate group, and a methacrylate group in the molecule or a mixture of two or more of the above-mentioned ene compounds, and an ene / thiol-based curable resin containing a thiol compound having two or more thiol groups in one molecule is treated with an oxidizing compound. As the curable resin material, fluorene-based acrylate can be used, and an ene compound having two or more functional groups selected from the group consisting of an allyl ether group, a vinyl ether group, an acrylate group, and a methacrylate group in the molecule or a mixture of two or more of the above-mentioned ene compounds, and an ene / thiol-based curable resin containing a thiol compound having two or more thiol groups in one molecule is treated with an oxidizing compound. As the curable resin material, fluorene-based acrylate can be used, and an ene compound having two or more functional groups selected from the group consisting of an allyl ether group, a vinyl ether group, an acrylate group, and a methacrylate group in the molecule or a mixture of two or more of the above-mentioned ene compounds, and an ene / thiol-based curable resin containing a thiol compound having two or more thiol groups in one molecule is treated with an oxidizing compound. Those obtained by this may also be used.

[0164] Resin 244 and the second resin further contain a photo-curing initiation component. The photo-curing initiation component is a photo-radical initiator that generates radicals when irradiated with ultraviolet or visible light. Any compound may be used as long as it is a compound. As the ultraviolet radical initiator, for example, acetophenone-based initiators , benzoin ether-based initiators, benzophenone-based initiators, α-diketone-based initiators, and thioxanthone-based initiators and the like can be used.

[0165] The resin 244 containing the conductive particles 242 can be provided on the first connection terminal 146a (or the third connection terminal 148a) by a printing method. As the printing method, an offset printing method is used. Since the resin 244 corresponding to the ink contains the conductive particles 242, it is preferable to use a pad printing method using a gravure plate among the offset printing methods.

[0166] The resin 244 containing the conductive particles 242 is arranged on the first connection terminal 146a (or the third connection terminal 148a) by a printing method, and the flexible circuit board 126 is connected to the transparent resin substrate 200. Therefore, even if the connection terminals are miniaturized and the pitch is narrowed, accurate connection can be achieved. The touch and fingerprint sensor-equipped display device 100 according to the present embodiment has the first sensor electrode 112 of the touch and fingerprint sensor unit 110 miniaturized, so that the number of connection terminals for extracting sensor signals increases. As shown in FIG. 26, among the terminal portions 122, a connection terminal for inputting a signal for displaying an image on the display portion 102 and a connection terminal for the touch and fingerprint sensor unit 110 are included in the same array. Even when the pitch is narrowed, the resin containing the conductive particles 242 can be used. ​By connecting the flexible circuit board 126 with the flexible circuit board 244, 126 can be attached to the terminal portion 122 to form an electrical connection.

[0167] FIG. 29 corresponds to the configuration of the switching circuit 120 and the first sensor electrode 112 shown in FIG. A flexible circuit board 126 is placed on the portion 122, and a connection terminal is connected to the flexible circuit board 126 by a conductive material. 29 shows a state in which one first sensor electrode 112 is provided for two columns of pixels 104. Therefore, a first connection terminal that is provided in the terminal portion 122 and connected to the switching circuit 120 is provided. The terminal 146a and the third connection terminal 148a provided on the flexible circuit board 126 are adjacent to each other. Even with such an arrangement of the connection terminals, the first connection terminal 146a and the third connection terminal When connecting the connecting terminal 148a, the conductive material dispersed in the resin 244 in a controlled number is By using the conductive particles 242, short circuits between adjacent terminals can be prevented.

[0168] FIG. 30 shows a second driving circuit 128 configured as a composite integrated circuit in which multiple functions are integrated. The display device 100 with a touch and fingerprint sensor according to the present embodiment is not limited to this example. As shown in FIG. 30, the driver IC 125a that drives the display unit 102 and the touch and The driver IC 125b that drives the fingerprint sensor is formed on a separate IC chip. The signal processing circuit may be mounted on a cable circuit board 126.

[0169] FIG. 31 shows a driver IC 125a that drives the display unit 102 and a touch and fingerprint sensor. FIG. 1 shows a plan view of a flexible circuit board 126 on which a driver IC 125b that operates the The wiring through which the signal of the first sensor electrode 112 is output is connected to the driver IC 12 that drives the display unit. It passes through the area of 5a and reaches the driver IC 125b that drives the touch and fingerprint sensor and is arranged in this way. The wiring connecting the driver IC 125a that drives the display unit and the sixth connection terminal 149 passes through the area of the driver IC 125b that drives the touch and fingerprint sensor and reaches the sixth connection terminal 149 and is arranged in this way.

[0170] The driver IC 125a that drives the display unit may be partitioned into a scanning signal line driving circuit block 130 and a data signal line driving circuit block 132. In this embodiment, as shown in FIG. 2 the first driving circuit 118 serves as both the scanning signal line driving circuit and the driving circuit for the second sensor electrode 114 For the first driving circuit 118, the signal for driving the scanning signal line is output from the driver IC 125a that drives the display unit, and the signal for controlling the driving of the second sensor electrode is output from the driver IC 125b that drives the touch and fingerprint sensor.

[0171] As shown in FIGS. 30 and 31, even when the driver IC for driving the display unit and the driver IC for driving the touch and fingerprint sensor unit are provided separately, two driver ICs can be mounted on the flexible circuit board 126 by changing the wiring structure.

[0172] According to the display device with a touch and fingerprint sensor according to this embodiment, by connecting the data signal line to the switching circuit, even when the touch and fingerprint sensor unit is provided, an increase in the connection terminals can be suppressed. In other words, by connecting the data signal line to the switching circuit, even when the first sensor electrodes (receiver electrodes) are arranged at high density, an increase in the connection terminals can be suppressed As a result, poor connection between the flexible circuit board at the terminal portion can be reduced. ​​

[0173] According to the touch and fingerprint sensor-equipped display device according to this embodiment, the touch and fingerprint sensor connects the second sensor electrode (transmitter electrode) of the unit 110 and the scanning signal line of the display unit 102 so that the scanning signal line of the display unit 102 can be used in combination as an auxiliary electrode for reducing the resistance of the second sensor electrode In addition, the scanning signal line is provided in contact with the second sensor electrode, and the second gate electrode and the scanning signal line are connected via a contact hole, so that even if the second gate insulating layer is made thin a short circuit between the data signal line and the scanning signal line can be prevented, and the driving ability of the transistor (thin film transistor) can be enhanced. Further, by forming the scanning signal line with a metal layer in contact with the second sensor electrode a light-shielding layer for the transistor can be formed with the metal layer .

[0174] [Second Embodiment] FIG. 32 shows a touch and fingerprint sensor-equipped display device 100 provided with a display unit 102 in which pixels 104 are arranged, a touch and fingerprint sensor unit 110 in which a first sensor electrode 112 and a second sensor electrode 114 are arranged, a first drive circuit 118, a switching circuit 120, a terminal unit 122, and a flexible circuit board 126. The first drive circuit 118 includes a scanning signal line drive circuit 118a that outputs a scanning signal to the scanning signal line and a scan signal to the second sensor electrode 114, and an output switching circuit 118b that switches the connection between the scanning line and the second sensor electrode 114. The second drive circuit 128 may be formed of a complex integrated circuit in which circuit blocks having different functions are integrated together in the same manner as in the first embodiment. The scanning signal line drive circuit 118a and the output switch The circuit 118b

[0175] The second drive circuit 128 may be formed of a complex integrated circuit in which circuit blocks having different functions are integrated together in the same manner as in the first embodiment. The scanning signal line drive circuit 118a and the output switch circuit 118b The control signal of the substitution circuit 118b is output from the scanning signal line driving circuit block 130.

[0176] FIG. 33 shows an example of the output switching circuit 118b corresponding to the array of the second sensor electrodes 114 shown in FIG. 9. The output switching circuit 118b includes a first switching element 141_1 connected to the scanning signal line (G_1) for the output of the first driving circuit 118 and a second switching element 145_1 connected to the second sensor electrode 114 (SC_1). The first switching element 141_1 and the second switching element 145_1 are connected in parallel. The first switching elements 141_1 to 141_n are provided for the scanning signal lines (G_1 to G_n), and the second switching elements 145_1 to 145_n are provided for the second sensor electrodes 114 (SC_1 to SC_n). The first switching element 141_1 and the second switching element 145_1 are formed of transistors, and gates for controlling on / off are connected to the first output switching signal line 143a and the second output switching signal line 143b. The first output switching signal line 143a and the second output switching signal line 143b are connected to the second driving circuit 128, and their on / off is controlled by a control signal output from the scanning signal line driving circuit block 130. During the display period, the first switching elements 141_1 to 141_n are turned on by the control signal of the first output switching signal line 143a, and the second switching elements 145_1 to 145_n are turned off by the control signal of the second output switching signal line 143b, and scanning signals are sequentially output to the scanning signal lines (G_1 to G_n). During the sensing period, the first switching elements 141_1 to 141_n are turned off by the control signal of the first output switching signal line 143a, and the second During the sensing period, the first switching elements 141_1 to 141_n are turned off by the control signal of the first output switching signal line 143a, and the second During the sensing period, the first switching elements 141_1 to 141_n are turned off by the control signal of the first output switching signal line 143a, and the second During the sensing period, the first switching elements 141_1 to 141_n are turned off by the control signal of the first output switching signal line 143a, and the second During the sensing period, the first switching elements 141_1 to 141_n are turned off by the control signal of the first output switching signal line 143a, and the second

[0177] During the display period, the first switching elements 141_1 to 141_n are turned on by the control signal of the first output switching signal line 143a, and the second switching elements 145_1 to 145_n are turned off by the control signal of the second output switching signal line 143b, and scanning signals are sequentially output to the scanning signal lines (G_1 to G_n). During the display period, the first switching elements 141_1 to 141_n are turned on by the control signal of the first output switching signal line 143a, and the second switching elements 145_1 to 145_n are turned off by the control signal of the second output switching signal line 143b, and scanning signals are sequentially output to the scanning signal lines (G_1 to G_n). During the display period, the first switching elements 141_1 to 141_n are turned on by the control signal of the first output switching signal line 143a, and the second switching elements 145_1 to 145_n are turned off by the control signal of the second output switching signal line 143b, and scanning signals are sequentially output to the scanning signal lines (G_1 to G_n). During the sensing period, the first switching elements 141_1 to 141_n are turned off by the control signal of the first output switching signal line 143a, and the second During the sensing period, the first switching elements 141_1 to 141_n are turned off by the control signal of the first output switching signal line 143a, and the second The second switching elements 145_1 to 145_n are turned on by the control signal of the output switching signal line 143b and a scan signal is sequentially output to the second sensor electrodes 114 (SC_1 to SC_n). In this way, the first drive circuit 118 uses the first switching elements 141_1 to 141 _n and the second switching elements 145_1 to 145_n to switch the scanning signal lines (G_1 to G _n) and the second sensor electrodes 114 (SC_1 to SC_n), thereby serving as a scanning signal line drive circuit for driving the display unit 102 and a scan circuit for the touch and fingerprint sensor unit 110 and making them shareable.

[0178] FIG. 34 shows the configuration of the switching circuit 118b corresponding to the arrangement of the second sensor electrodes 114 shown in FIG. 10. In FIG. 10, one second sensor electrode 114 is disposed for every two rows of pixels 104, so the number of the second sensor electrodes 114 is half the number of the scanning signal lines. Therefore, the output switching circuit 118b has a configuration in which a circuit in which the first switching element 141_1 connected to the scanning signal line (G_1) and the second switching element 145_1 connected to the second sensor electrode 114 (SC_1) are provided in parallel and a circuit of only the first switching element 141_2 connected to the second scanning signal line (G_2 ) are alternately arranged. Similarly, with the configuration of the switching circuit 118b shown in FIG. 34, the scanning signal lines (G_1 to G _n) and the second sensor electrodes 114 (SC_1 to SC_(n + 1) / 2) can be switched to drive the touch and fingerprint sensor-equipped display device 100.

[0179] The touch and fingerprint sensor-equipped display device shown in FIG. 32 has a different configuration of the first drive circuit 118 ​​​The other features are the same as those of the display device with a touch and fingerprint sensor shown in the first embodiment, and the same functions are performed. The effect can be obtained.

[0180] [Third embodiment] In the present embodiment, in contrast to the first embodiment, the driving circuit for outputting the scanning signal and the scanning signal is An example of a display device with a touch and fingerprint sensor having a different configuration is shown. In this embodiment, the differences from the first embodiment will be mainly described.

[0181] FIG. 35 shows a display section 102 in which pixels 104 are arranged, a first sensor electrode 112, and a second sensor electrode 113. A touch and fingerprint sensor unit 110 having a touch electrode 114 arranged thereon, a first driving circuit 118, a switching circuit A touch and fingerprint sensor having a circuit 120, a terminal portion 122, and a flexible circuit board 126. The display device 100 includes a first driving circuit 118 that outputs a scanning signal to the scanning signal line. A scanning signal line driving circuit 118c and a scanning The circuit 118c is divided into two circuit blocks, a circuit 118d and a circuit 118e.

[0182] The second driving circuit 128 is an integrated circuit having circuit blocks with different functions, similar to the first embodiment. The scanning signal line driving circuit 11 of the display unit 102 may be formed of a composite integrated circuit. 8c and the control signal to the scan circuit 118d of the touch and fingerprint sensor unit 110 is a scan signal It is output from the line driver block 130 .

[0183] The display device 100 with a touch and fingerprint sensor shown in FIG. c and scan circuit 118d are formed as two independent circuit blocks. Image display and touch and fingerprint sensor sensing can be performed simultaneously.

[0184] FIG. 36A shows a plan view of the second sensor electrode 114 corresponding to the configuration shown in FIG. 35. FIG. 3 6B also shows the scanning signal line 106 provided on the second sensor electrode 114, the selection transistor 138 is shown by a dotted line. FIG. 36B shows a cross-sectional structure corresponding to between C7-C8 shown in FIG. 36A and FIG. 36C shows a cross-sectional structure corresponding to between C9-C10.

[0185] As shown in FIG. 36A, the second sensor electrode 114 is composed of a second sensor electrode layer 206 and a second auxiliary electrode 207. As shown in FIG. 36B, between the second sensor electrode 114 and the scanning signal line 1 06, a fourth transparent resin layer 202d, a first insulating layer 210, and a second insulating layer 212 are provided and they are insulated from each other. According to such a wiring structure, it is possible to simultaneously input a scan signal for the second sensor electrode 114 and a scan signal for the scanning signal line 106. That is, the display device 100 with a touch and fingerprint sensor can detect fingerprints while displaying an image.

[0186] FIG. 37 shows a timing chart of the display device 100 with a touch and fingerprint sensor shown in FIG. 35. As shown in FIG. 37, in the display device 100 with a touch and fingerprint sensor according to the present embodiment, a display period and a sensing period appear at the same timing. In the display device 100 with a touch and fingerprint sensor according to the present embodiment, in the first driving circuit 118, the scanning signal line driving circuit 118c of the display unit 102 and the scan circuit 118d of the touch and fingerprint sensor unit 110 are provided as independent circuit blocks, and also in the second driving circuit 128, the data signal line driving circuit block 132 and the touch and fingerprint sensor detection circuit block 134 are also independent circuits and in FIG. 36C shows a cross-sectional structure corresponding to between C9-C10. Since it is a road block, it is possible to display images and perform sensing at the same time. .

[0187] According to the display device 100 with a touch and fingerprint sensor according to the present embodiment, for example, Touch or fingerprint sensing can be performed while displaying. Other configurations are the same as those of the first embodiment. The present invention relates to a display device with a touch and fingerprint sensor, and the present invention provides the same effects as the display device with a touch and fingerprint sensor. Cut.

[0188] [Fourth embodiment] In this embodiment, the display device 100 with the touch and fingerprint sensor shown in the first embodiment is A part of the transparent resin substrate 200 is replaced with ultra-thin tempered glass (Ultra-Thin Glass: UTG). An example will be described.

[0189] FIG. 38 shows a touch and fingerprint sensor in which ultra-thin reinforced glass is used in a part of a transparent resin substrate 200. The sensor-equipped display device 100 is specifically a transparent resin substrate 200 according to this embodiment. In the structure of the transparent resin substrate 200 shown in FIG. 16A and FIG. 16B, the first transparent resin layer 202a The thickness of the ultra-thin tempered glass that can be applied is 25μm~50μm. As shown in FIG. 38, the transparent resin substrate 20 according to this embodiment has a thickness of 30 μm. 0 has four corners rounded with a radius (R) of 2mm to 5mm to prevent breakage. The ultra-thin tempered glass is bendable, and such a transparent resin substrate 200 is The display device 100 with touch and fingerprint sensor used is a foldable electronic display device. This can be applied to child devices (e.g., smartphones, tablet terminals, etc.). The configuration according to this embodiment is a touch and fingerprint sensor-equipped device shown in the second and third embodiments. It can be applied to the display device.

[0190] [Fifth Embodiment] This embodiment shows an example of a display device with a touch and fingerprint sensor that adopts a mounting method by Chip On Plastic (COP) as an implementation method of a drive circuit. shown.

[0191] FIG. 39 shows a display device 100 with a touch and fingerprint sensor in which an ultra-thin reinforced glass is used for a part of a transparent resin substrate 200. A display unit 102, a touch and fingerprint sensor unit 110, a first drive circuit 118, a switching circuit 120, a terminal unit 122, and a transparent resin substrate 200 are the same as those shown in the fourth embodiment. On the other hand, in this embodiment, it is different in that a second drive circuit 128 is mounted on the transparent resin substrate 200.

[0192] Similar to the transparent resin substrate shown in the fourth embodiment, the transparent resin substrate 200 of this embodiment also has its four corner portions processed into a round shape with a radius (R) of 2 mm to 5 mm. When an ultra-thin reinforced glass is used for the transparent resin substrate 200, having such a corner shape can prevent breakage at the four corners in the assembly process and improve the yield.

[0193] FIG. 40 shows a cross-sectional structure of a region where the second drive circuit 128 is mounted and the terminal unit 122. The second drive circuit 128 includes a first pad 135a and a second pad 135b. The first pad 1 35a is connected to a first connection terminal 146a via conductive particles 242, and the second pad 135 b is connected to a second connection terminal 146b via conductive particles 242. The second drive circuit 128 can be mounted on the transparent resin substrate 200 by adopting a non-heating room-temperature pressurization mounting technique.​​​​ It is. The conductive particles 242 are dispersed in the resin 244, and the details are as described in detail in the description of FIG. 28. It is as described in detail.

[0194] The terminal portion 122 is provided outside the region where the second drive circuit 128 is mounted. FIG. 40 shows the structure in which the shield electrode 116 and the first insulating layer 210 extend from the region where the second drive circuit 128 is mounted to the region of the terminal portion 122. By adopting such a structure, the rigidity of the region where the second drive circuit 128 is mounted can be increased, and deformation and peeling of the connection terminals can be prevented. Thereby, the yield of the process of connecting the second drive circuit 128 can be improved. In addition, it is more preferable to use a rigid para-based polyamide resin for the fourth transparent resin layer 202d. It is more preferable. As shown in FIGS. 39 and 40, by mounting the second drive circuit 128 on the transparent resin substrate 200 by CPO, the touch and fingerprint sensor-equipped display device 100 can also be realized. The touch and fingerprint sensor-equipped display device 100 according to the present embodiment omits the flexible circuit board by mounting the second drive circuit 128 on the transparent resin substrate 200, and the number of components and the manufacturing process can be reduced.

[0195]

[0196]

[0197] [Sixth Embodiment] This embodiment shows the configuration of a touch and fingerprint sensor-equipped display device 100 in which the circuit configuration of the pixel 104 is different from that of the first embodiment. It shows the configuration of the touch and fingerprint sensor-equipped display device 100.

[0197] FIG. 41 is an example of an equivalent circuit of the pixel 104 and shows an example of a pixel circuit of a voltage writing method. As described in the first embodiment, the pixel 104 includes a first sub-pixel 105r and a second sub-pixel As described in the first embodiment, the pixel 104 includes a first sub-pixel 105r and a second sub-pixel It includes the first sub-pixel 105r and the third sub-pixel 105b. However, Fig. 41 shows the configuration of the first sub-pixel 105r and the second sub-pixel 10 5g in detail. The pixel 104 has a configuration in which columns of the first sub-pixel 105r, columns of the second sub-pixel 105g and columns of the third sub-pixel 105b are arranged in a stripe pattern.

[0198] The first sub-pixel 105r includes a driving transistor 136r, a selection transistor 138r, a capacitor element 140r, and an EL element 142r. The second sub-pixel 105g includes a driving transistor 136g, a selection transistor 138g, a capacitor element 140g, and an EL element 142g. The selection transistor 138r of the first sub-pixel 105r has its second gate electrode connected to the scanning signal line 10 6 (GBn) and its source side connected to the data signal line 108 (Dm). The selection transistor 138g of the second sub-pixel 105g has its second gate electrode connected to the scanning signal line 136 (GAn ) and its source side connected to the data signal line 108 (Dm + 1). Also, the selection transistor 138b of the third sub-pixel 105b has its second gate electrode connected to the scanning signal line 136 (GBn ) and its source side connected to the data signal line 108 (Dm + 1). Thus, the pixel circuit according to this embodiment has a configuration in which the second gate electrodes of the selection transistors of adjacent sub-pixels are connected to different scanning signal lines and their source sides are connected to the same data signal line. Also, the pixel 104 is arranged such that the common wiring 144 is shared by the column Lr of the first sub-pixel 105r and the column Lg of the second sub-pixel 10 5g.

[0199] Fig. 42 shows a timing chart when driving the pixel 104 shown in Fig. 41. Fig. 4 2 shows that the scanning signal of the scanning signal line 106 (GAn) is at a low level (L level) at time t -1 or It transitions to the high level (H level), and the selection transistor 138g is turned on. At the same time, a data signal is input to the data signal line 108 (Dm+1), and data is written to the second sub-pixel 105g. At time t0, the scanning signal transitions to the L level, and the selection transistor 138g is turned off. At the same time, the scanning signal on the scanning signal line 106 (GBn) transitions from the low level (L level) to the high level (H level) at time t0, and the selection transistor 138r and the selection transistor 138b are turned on. At the same time, data signals are input to the data signal line 108 (Dm) and the data signal line 108 (Dm+1), and data is written to the first sub-pixel 108r and the third sub-pixel 108b. At time t1, the scanning signal transitions to the L level, and the selection transistor 138r and the selection transistor 1438b are turned off, which shows the operation. A data signal is input to the data signal line 108 (Dm+1), and data is written to the second sub-pixel 105g. At time t0, the scanning signal transitions to the L level, and the selection transistor 138g is turned off. At the same time, the scanning signal on the scanning signal line 106 (GBn) transitions from the low level (L level) to the high level (H level) at time t0, and the selection transistor 138r and the selection transistor 138b are turned on. A data signal is input to the data signal line 108 (Dm) and the data signal line 108 (Dm+1), and data is written to the first sub-pixel 108r and the third sub-pixel 108b. At time t1, the scanning signal transitions to the L level, and the selection transistor 138r and the selection transistor 1438b are turned off. This shows the operation. At time t1, the scanning signal transitions to the L level, and the selection transistor 138r and the selection transistor 1438b are turned off. This shows the operation.

[0200] In this way, the selection transistors of adjacent sub-pixels (the first sub-pixel 105r and the second sub-pixel 105g, the second sub-pixel 105g and the third sub-pixel 105b) are connected to different scanning signal lines. In this way, adjacent sub-pixels (for example, the second sub-pixel 105b and the third sub-pixel 105b) share the data signal line 108 (Dm+1) and can write data at different timings. With such a configuration of the pixel circuit, the number of data signal lines can be reduced. That is, the number of connection terminals at the terminal portion 122 can be reduced. With such a configuration of the pixel circuit, the number of data signal lines can be reduced. That is, the number of connection terminals at the terminal portion 122 can be reduced.

[0201] Figure 43 is an example of the equivalent circuit of the pixel 104 and shows an example of a pixel circuit of the current writing method. The pixel 104 includes the first sub-pixel 105r, the second sub-pixel 105g, and the third sub-pixel 105b. Figure 43 shows the configuration of the first sub-pixel 105r and the second sub-pixel 105g in detail. The pixel 104 includes the first sub-pixel 105r, the second sub-pixel 105g, and the third sub-pixel 105b. Figure 43 shows the configuration of the first sub-pixel 105r and the second sub-pixel 105g in detail.

[0202] The first sub-pixel 105r includes a first transistor 138r (selection transistor), a second transistor 139r, a driving transistor 136r, a light emission control transistor 137r, a capacitive element 140r, and an EL element 142r. The first transistor 138r and the second transistor 139r have their second gate electrodes connected to the scanning signal line 106 (GBn) and their source sides connected to the data signal line 108 (Dm). The drain side of the first transistor 138r is connected to the second gate electrode of the driving transistor 136 and the capacitive element 140, and is used to control the writing timing of the data signal. The second transistor 139r is connected to the drain of the driving transistor 136, and its on / off operation is controlled at the same timing as that of the first transistor 138r, and it is provided to compensate for the threshold voltage of the driving transistor 136r. The light emission control transistor 137r is connected in series between the EL element 142r and the driving transistor 136r, and its second gate is connected to the second scanning signal line 107 (En) to control the light emission timing of the EL element 142r. The second sub-pixel 105g has a similar configuration.

[0203] A second capacitive element 274r may be provided between the second scanning signal line 107 and the drain of the first transistor 138r. By providing the second capacitive element 274r, it is possible to suppress the variation in the gate-drain capacitance Cgd when the first transistor 138r turns off, and suppress the variation in the voltage of the capacitive element 140r by ΔVgd.

[0204] Although not shown, the column Lr of the first sub-pixel 105r has a similar configuration, and the source sides of the first transistor and the second transistor are connected to the data signal line 108 (Dm+1), and the The two gate electrodes are connected to the scanning signal line 106 (GBn), and the second gate electrode of the emission control transistor is connected to the second scanning signal line 107 (En), and has a column of the third sub-pixel 105b. .

[0205] FIG. 44 shows a timing chart when driving the pixel 104 shown in FIG. 43. FIG. 4 4 shows that the scanning signal of the scanning signal line 106 (GAn) transitions from a low level (L level) to a high level (H level) at time t0, and the first transistor 138g and the second transistor 13 9g are turned on. In synchronization with this, a data signal is input to the data signal line 108 (Dm+1), data is written to the second sub-pixel 105g, and an operation is performed to compensate the threshold voltage of the driving transistor 136g. At time t1, the scanning signal of the scanning signal line 106 (GAn) transitions to the L level, the first transistor 138g and the second transistor 139g are turned off, and at the same time, the scanning signal of the scanning signal line 106 (GBn) transitions from a low level (L level ) to a high level (H level) at time t1, the first transistor 138r and the second transistor 13 9r are turned on. In synchronization with this, a data signal is input to the data signal line 108 (Dm), data is written in the first sub-pixel 108r, and an operation is performed to compensate the threshold voltage of the driving transistor 136r. During such a data writing period, the second scanning signal line 107 is at the L level, and the emission control transistors 137r and 137g are off. When the data writing period ends, a transition occurs to the emission period. That is, the second scanning signal line 1 07 transitions from the L level to the H level, an emission signal is input, and the emission control transistor 13 7r and 137g are turned on. Data is written, and an operation is performed to compensate the threshold voltage of the driving transistor 136r. During such a data writing period, the second scanning signal line 107 is at the L level, and the emission control transistors 137r and 137g are off. 107 is at the L level, and the emission control transistors 137r and 137g are off. .

[0206] When the data writing period ends, a transition occurs to the emission period. That is, the second scanning signal line 1 07 transitions from the L level to the H level, an emission signal is input, and the emission control transistor 13 7r and 137g are turned on. As a result, the first sub-pixel 105r and the second sub-pixel 108g In this case, a current corresponding to the drain currents of the driving transistors 136r and 136g flows through the EL elements 142 r and 142g, causing them to emit light.

[0207] By connecting the selection transistors of adjacent sub-pixels (the first sub-pixel 105r and the second sub-pixel 105g) to different scanning signal lines, the number of data signal lines 108 can be reduced, and the number of connection terminals in the terminal portion 122 can be decreased.

[0208] FIG. 47 shows the arrangement of the data signal lines 108 and the common wiring 144 shown in FIGS. 41 and 43. The data signal lines 108 are provided on the upper layer side with respect to the fourth transparent resin layer 202d, whereas the common wiring 144 is provided between the third transparent resin layer 202c and the fourth transparent resin layer 202d and is provided so as to be in contact with the shield electrode 116. The shield electrode 116 is formed of a transparent conductive film whereas the common wiring 144 is formed of a metal film. By providing the common wiring 144 in a stripe pattern extending from one end to the other end of the shield electrode 116, the resistance of the shield electrode 116 can be reduced.

[0209] FIG. 46 shows a display device 100 with a touch and fingerprint sensor in which an ultra-thin reinforced glass is used for a part of the transparent resin substrate 200 according to the present embodiment. The display device 100 with a touch and fingerprint sensor shown in FIG. 46 has the same configuration as that shown in FIG. 39 except that a switching circuit 120 is not provided and the configurations of the third connection terminal 148a and the second scanning signal line driving circuit 118e are different. has.

[0210] In the second driving circuit 128, a third connection terminal 148a is provided in the data signal line driving circuit block 132. The third connection terminal 148a is connected to the data signal line 108, and data signals are output to the respective pixels 104 of the display unit 102 without passing through the switching circuit. As shown in FIGS. 41 and 43, since the number of data signal lines 108 is arranged to be shared by adjacent pixel columns, the number of the third connection terminals 148a is reduced as compared with the conventional case. FIG. 45 shows details of the connection portion between the transparent resin substrate 200 and the second driving circuit 128. The transparent resin substrate 200 is provided with a first connection terminal 146a and a second connection terminal 146b. The first connection terminal 146a is connected to the data signal line 108, and the second connection terminal 146b is connected to the first sensor electrode 112. The third connection terminal 148a of the second driving circuit 128 is connected to the first connection terminal 146a, and the fourth terminal 148b is connected to the second connection terminal 146b. Conductive particles 242 dispersed in the resin 244 are used for the connection portion. Details of the connection structure are the same as the structure shown in FIG. 28. According to the present embodiment, in the case where the display unit 102 has a configuration in which pixels corresponding to respective colors are arranged in a stripe shape, by having a pixel circuit in which adjacent pixel columns share the data signal line 108, the number of data signal lines 108 can be reduced, and as a result, the number of connection terminals can be reduced without using the switching circuit 120.

[0211] FIG. 45 shows details of the connection portion between the transparent resin substrate 200 and the second driving circuit 128. The transparent resin substrate 200 is provided with a first connection terminal 146a and a second connection terminal 146b. The first connection terminal 146a is connected to the data signal line 108, and the second connection terminal 146b is connected to the first sensor electrode 112. The third connection terminal 148a of the second driving circuit 128 is connected to the first connection terminal 146a, and the fourth terminal 148b is connected to the second connection terminal 146b. In the connection portion, conductive particles 242 dispersed in the resin 244 are used. Details of the connection structure are the same as the structure shown in FIG. 28.

[0212] According to the present embodiment, when the display unit 102 has a configuration in which pixels corresponding to respective colors are arranged in a stripe shape, by having a pixel circuit in which adjacent pixel columns share the data signal line 108, the number of data signal lines 108 can be reduced, and as a result, the number of connection terminals can be reduced without using the switching circuit 120.

[0213] [Seventh Embodiment] This embodiment shows an example of the layout of each element constituting the voltage writing type pixel 104 shown in FIG. 43.

[0214] FIG. 48 shows an example of the layout of the first sub-pixel 105r and the second sub-pixel 105g. The first sub-pixel 105r includes a first transistor 138r, a second transistor 139r, a driving transistor 136r, a light emission control transistor 137r, and a capacitor element 140r. The second sub- pixel 105g includes a first transistor 138g, a second transistor 139g, a driving transistor 136g, a light emission control transistor 137g, and a capacitor element 140g. Note that the layers constituting the EL elements 142r and 142g are omitted. Also, the first sensor electrode 112 and the second sensor electrode 114 are omitted.

[0215] Focusing on the first sub-pixel 105r, the first transistor 138r includes a first oxide semiconductor layer 180a, a third metal oxide conductive layer 176c forming a source, a fourth metal oxide conductive layer 176d forming a drain, and is laminated with a first scanning signal line 106(GBn). A second gate electrode 153 formed of a transparent conductive film extending to the region of the first transistor 138r is laminated via a second insulating layer 212 not shown, and a first gate electrode 152 formed by a shield electrode 116 not shown is laminated via a first insulating layer 210 not shown. With respect to the first oxide semiconductor layer 180a, the first gate electrode 152 is provided in a lower layer, and the second gate electrode 153 is provided in an upper layer.

[0216] The second transistor 139r has the same configuration as the first transistor 138r, and a fifth metal oxide conductive layer 176e forming a drain is connected to a second metal oxide conductive layer 176a forming the driving transistor 136r.

[0217] The driving transistor 136r has a structure in which a second gate electrode 151 of the same layer as the second gate electrode 153 covers the first oxide semiconductor layer 180a, the first metal oxide conductive layer 1 76a, and the second metal oxide conductive layer 176b. A capacitor element 140r is formed in a region where the second gate electrode 151 and the second metal oxide conductive layer 176b overlap.

[0218] The light emission control transistor 137r includes a sixth metal oxide conductive layer 176f connected to the first oxide semiconductor layer 180a and the first metal oxide conductive layer 176a, a seventh metal oxide conductive layer 176g disposed with a gap in this conductive layer, overlapping these two metal oxide conductive layers, and forming the second scanning signal line 107(En), and a second gate electrode 268 formed in a region overlapping the region of the light emission control transistor 137r, and a first gate electrode (266) formed by a shield electrode 116 (not shown) are stacked. An EL element 142r (not shown) is connected to the light emission control transistor 137r via an eighth contact hole 264.

[0219] The second sub-pixel 105g has a similar configuration, and has a layout in which the first sub-pixel 105r is inverted with the common wiring 144 as the center and further inverted in the vertical direction.

[0220] FIG. 49 shows a partial cross-sectional structure of the first sub-pixel 105r, mainly showing the cross-sectional structures of the light emission control transistor 137r, the capacitor element 140r, and the EL element 142r described in FIG. 48. As shown in FIG. 49, in the light emission control transistor 137r, the sixth metal oxide conductive layer 176 f and the second metal oxide conductive layer 176g are between the first insulating layer 210 and the first oxide semiconductor layer 180 a. It is provided between a and the first gate electrode 248 is formed in the same layer as the shield electrode 116. The second gate electrode 250 (second scanning signal line 107) is provided so as to overlap the first oxide semiconductor layer 180a via the second insulating layer 212. Also, the capacitor element 140r is formed by a transparent conductive film forming the second gate electrode 151 that overlaps with the second insulating layer 212 interposed therebetween and the second metal oxide conductive layer 176b. The second metal oxide conductive layer 176b has a structure connected to the shield electrode 116 by the fifth contact hole 166. The EL element 142r has a structure in which, from the first electrode 220 (cathode) side, an electron transport layer 222, an electron injection layer 224, a light emitting layer 226, an electron blocking layer 227, a hole transport layer 228, a hole injection layer 230, and a second electrode 232 are laminated. A planarization layer 246 and a passivation layer 248 are provided on elements such as the light emission control transistor 137r. The EL element 142r is provided on the planarization layer 246. Figure 50 shows the planar layout of the EL element 142 and the cross-sectional structure between E1 - E2 and between E3 - E4. The peripheral portion of the first electrode 220 is covered by the partition wall 262. Also, the eighth contact hole 264 through which the first electrode 220 is connected to the light emission control transistor 137 is also provided at a position covered by the partition wall 262. When the electron transport layer 222 is formed of a coating type material, the electron transport layer 222 is provided on the upper surface of the first electrode 220 and in a region surrounded by the partition wall 262.

[0221] When the electron injection layer 224, the electron blocking layer 227, the hole transport layer 228, and the hole injection layer 230 are formed by vapor deposition, they are provided so as to cover the partition wall 262 and spread over the entire display portion 102. The light emitting layer 226 uses a shadow mask during vapor deposition and overlaps the opening of the partition wall 262. 0 is provided at a position covered by the partition wall 262. When the electron transport layer 222 is formed of a coating type material, the electron transport layer 222 is provided on the upper surface of the first electrode 220 and in a region surrounded by the partition wall 262. When the electron injection layer 224, the electron blocking layer 227, the hole transport layer 228, and the hole injection layer 230 are formed by vapor deposition, they are provided so as to cover the partition wall 262 and spread over the entire display portion 102. When the electron injection layer 224, the electron blocking layer 227, the hole transport layer 228, and the hole injection layer 230 are formed by vapor deposition, they are provided so as to cover the partition wall 262 and spread over the entire display portion 102. When the electron injection layer 224, the electron blocking layer 227, the hole transport layer 228, and the hole injection layer 230 are formed by vapor deposition, they are provided so as to cover the partition wall 262 and spread over the entire display portion 102. The light emitting layer 226 uses a shadow mask during vapor deposition and overlaps the opening of the partition wall 262. It is provided so as to be. Further, the light-emitting layer 226 can also be formed using an inkjet coating method, a gravure offset printing method, or the like. It is also possible to form using a gravure offset printing method or the like.

[0222] As is apparent from referring to FIGS. 48 and 50, the EL element 142, the first transistor 138, the second transistor 139, the driving transistor 136, and the light emission control transistor 137 are arranged so as to overlap. The gate electrodes, source and drain electrodes, and oxide semiconductor layers of these transistors forming the pixel circuit are formed of a transparent material that transmits visible light. Therefore, even if the EL element 142 is a bottom emission type, light can be emitted to the outside through the transparent resin substrate 200. Since it is formed of a transparent material that transmits visible light, even if the EL element 142 is a bottom emission type, light can be emitted to the outside through the transparent resin substrate 200. Light can be emitted to the outside through the transparent resin substrate 200.

[0223] [Eighth Embodiment] The driving transistor 136 that drives the EL element 142 has a capacitive element 140 in order to hold a voltage based on a data signal. Here, the voltage information written in the capacitive element 140 varies by ΔVgd when the gate voltage drops due to the gate-drain capacitance Cgd of the selection transistor 138. When the capacitance of the capacitive element 140 is large, there is no problem. However, due to the high definition in medium and small-sized displays, the pixel size is reduced and the capacitance of the capacitive element 140 cannot be increased, and this effect cannot be ignored. Also, in the current write-in method, when the capacitance of the capacitive element 140 is increased, it is necessary to increase the write-in time. However, due to the relationship between the number of pixels and the driving frequency, there is a problem that sufficient write-in time cannot be obtained, which hinders gradation expression. This problem cannot be ignored when the capacitance of the capacitive element 140 cannot be increased due to the reduction of the pixel size. Also, in the current write-in method, when the capacitance of the capacitive element 140 is increased, it is necessary to increase the write-in time. However, due to the relationship between the number of pixels and the driving frequency, sufficient write-in time cannot be obtained, which hinders gradation expression. There is a problem that it causes an obstacle to gradation expression.

[0224] FIG. 51 shows an example of a pixel circuit capable of suppressing the variation of ΔVgd as described above. . Specifically, in a configuration where the sub-pixel 105 is connected such that the first transistor 138 (selection transistor) applies a data signal to the gate of the driving transistor 136, and a light emission control transistor 137 is connected between the EL element 142 and the driving transistor 136, the second transistor 139 is connected between the data line signal 108 and the drain of the light emission control transistor 137, and further, a second capacitor element 274 is connected between the second transistor 139 and the second gate electrode of the driving transistor 136, so that when the gate voltage of the first transistor 138 falls, the voltage of the capacitor element 140 does not vary by ΔVgd. .

[0225] FIG. 52 shows the planar layout of the sub-pixel 105 shown in FIG. 51, and FIG. 53 shows a partial cross-sectional structure of the sub-pixel 105, showing the cross-sectional structures of the first transistor 138, the second capacitor element 274, and the EL element 142 disposed on the upper layer side thereof. The second capacitor element 274 has a structure in which the second capacitor electrode 272 is provided so as to overlap with the fourth metal oxide conductive layer 176d extending from the first transistor 138 via the second insulating layer 212. Since the second capacitor electrode 272 can be formed in the same layer as the second gate electrode 151 of the driving transistor 136, it can be formed without adding a new layer and without increasing the number of photomasks. .

[0226] Also, as shown in the layout diagram of the sub-pixel 105 in FIG. 54 and the partial cross-sectional view of the sub-pixel 105 in FIG. 55, the second gate electrode 151 of the driving transistor 136 is connected to the drain of the light emission control transistor 137, and the fourth metal oxide conductive layer 17 extending from the first transistor 138 ​​​​​​​​​​​​The second capacitive element 274 may be formed by providing it so as to overlap via 6d and the second insulating layer 212. This may be done.

[0227] Thus, by providing the second capacitive element 274, when the gate voltage drops due to the gate-drain capacitance Cgd of the selection transistor 138, the voltage fluctuation of the capacitive element 140 due to the fluctuation of ΔVgd can be suppressed. This embodiment can be implemented in appropriate combination with the touch and fingerprint sensor-equipped display device shown in the first embodiment. When the gate voltage drops due to the gate-drain capacitance Cgd of the selection transistor 138, the voltage fluctuation of the capacitive element 140 due to the fluctuation of ΔVgd can be suppressed. This embodiment can be implemented in appropriate combination with the touch and fingerprint sensor-equipped display device shown in the first embodiment. This embodiment can be implemented in appropriate combination with the touch and fingerprint sensor-equipped display device shown in the first embodiment.

[0228] [Embodiment 9] This embodiment shows an example of the light extraction structure of the EL element 142 provided in the touch and fingerprint sensor-equipped display device 100. This shows an example of the light extraction structure of the EL element 142 provided in the touch and fingerprint sensor-equipped display device 100.

[0229] FIG. 56 shows the cross-sectional structure of the sub-pixel 105 according to this embodiment. The sub-pixel 105 according to this embodiment has a structure in which a wire grid polarizer 250 is provided on the side where the EL element 142 emits light. For example, the wire grid polarizer 250 is provided between the transparent resin substrate 200 provided with the first sensor electrode 112 and the second sensor electrode 114 and the EL element 142. Specifically, FIG. 56 shows an example in which the wire grid polarizer 250 is provided on the upper surface of the shield electrode 116. The EL element 142 has a structure in which an electron transport layer 222, an electron injection layer 224, a light-emitting layer 226, a hole transport layer 228, and a hole injection layer 230 are laminated between the first electrode 220 and the second electrode 232, as described with reference to FIG. 16A. The sub-pixel 105 according to this embodiment has a structure in which a wire grid polarizer 250 is provided on the side where the EL element 142 emits light. For example, the wire grid polarizer 250 is provided between the transparent resin substrate 200 provided with the first sensor electrode 112 and the second sensor electrode 114 and the EL element 142. For example, the wire grid polarizer 250 is provided between the transparent resin substrate 200 provided with the first sensor electrode 112 and the second sensor electrode 114 and the EL element 142. Specifically, FIG. 56 shows an example in which the wire grid polarizer 250 is provided on the upper surface of the shield electrode 116. The EL element 142 has a structure in which an electron transport layer 222, an electron injection layer 224, a light-emitting layer 226, a hole transport layer 228, and a hole injection layer 230 are laminated between the first electrode 220 and the second electrode 232, as described with reference to FIG. 16A. Specifically, FIG. 56 shows an example in which the wire grid polarizer 250 is provided on the upper surface of the shield electrode 116. The EL element 142 has a structure in which an electron transport layer 222, an electron injection layer 224, a light-emitting layer 226, a hole transport layer 228, and a hole injection layer 230 are laminated between the first electrode 220 and the second electrode 232, as described with reference to FIG. 16A. The EL element 142 has a structure in which an electron transport layer 222, an electron injection layer 224, a light-emitting layer 226, a hole transport layer 228, and a hole injection layer 230 are laminated between the first electrode 220 and the second electrode 232, as described with reference to FIG. 16A. The EL element 142 has a structure in which an electron transport layer 222, an electron injection layer 224, a light-emitting layer 226, a hole transport layer 228, and a hole injection layer 230 are laminated between the first electrode 220 and the second electrode 232, as described with reference to FIG. 16A.

[0230] Since the EL element 142 emits light toward the transparent resin substrate 200 side, the first electrode 220 is formed of a transparent conductive film and the second electrode 232 is formed of a metal film. The EL element 1 shown in this embodiment Since the EL element 142 emits light toward the transparent resin substrate 200 side, the first electrode 220 is formed of a transparent conductive film and the second electrode 232 is formed of a metal film. The EL element 1 shown in this embodiment 42 further has a structure in which a light scattering layer 251 is provided between the electron injection layer 230 and the second electrode 232. The light scattering layer 251 is formed by applying a transparent adhesive ink 254 containing transparent light scattering beads 252 onto the electron injection layer 230. For example, the light scattering layer 251 can be formed by applying the transparent adhesive ink 254 containing the transparent light scattering beads 252 to the region of the sub-pixel 105 by a printing method such as an inkjet printing method.

[0231] FIG. 58 shows the detailed structure of the wire grid polarizer 250. The wire grid polarizer 250 has a structure in which fine wire patterns are arranged periodically. The fine wire patterns are formed of metal wires 258 formed of aluminum (Al), an aluminum-silver alloy (AlAg), silicon, or an aluminum alloy added with neodymium (Al—Si, Al—Nd), etc. A light absorption layer 256 that absorbs visible light may be provided on the shield electrode 116 side of the metal wire 258. The light absorption layer 256 is preferably formed of a semiconductor material having a light absorption band in visible light, such as silicon (Si), germanium (Ge), or silicon germanium (SiGe), or a high melting point metal silicide (a compound of a high melting point metal such as chromium (Cr), cobalt (Co), nickel (Ni), tantalum (Ta), molybdenum (Mo), titanium (Ti), niobium (Nb), etc. and silicon). The width of the metal wire 258 is 100 nm or less, preferably 70 nm or less, the thickness is 100 nm or more, preferably 200 nm or more, and it is arranged at a pitch of half or less of the wavelength of visible light (for example, 200 nm or less). Therefore, although a shiny surface of the metal is visually recognized, the metal wire 258 is on the side surface of the wire grid polarizer 250 that is visually recognized. ​​​​​​​​​​​​​​​By providing the light absorption layer 256 on top of 8, mirroring of the display screen can be prevented. It can be achieved.

[0232] Figure 59 shows an example in which a wire grid polarizer 250 is provided on the insulating layer 260. The metal fine wires 258 constituting the wire grid polarizer 250 are arranged at a pitch of half or less of the wavelength of visible light (for example, 200 nm or less), and thus can also serve as the shield electrode 116. At this time, the metal fine wires 258 are preferably controlled to a certain potential (for example, ground potential), similar to the shield electrode 116.

[0233] The wire grid polarizer 250 is a linear polarizer and has a transmission polarization axis and a reflection polarization axis. As shown in Figure 68, by providing the wire grid polarizer 250, among the emitted light of the EL element 1 42, the polarization component (TM wave) parallel to the transmission polarization axis passes through and is emitted from the transparent resin substrate 20 0, and the polarization component (TE wave) parallel to the reflection polarization axis is reflected. That is, Half of the light emitted from the EL element 142 is reflected by the wire grid polarizer 250 and re-enters the EL element 142. The light re-entering the EL element 142 is scattered by the light scattering layer 251 and the polarization axis becomes random. Then it is emitted again from the EL element 142, and a part of it passes through the wire grid polarizer 250 and is emitted to the outside, and the remaining components are reflected. By providing the wire grid polarizer 250 and the light scattering layer 251 in this way, the light emitted from the EL element 142 can be multi-reflected to converge the polarization axis of the emitted light in one direction.

[0234] Although not shown in Figure 56, the touch and fingerprint sensor-equipped display device 100 includes a controller A polarization axis rotating plate is provided on the display screen side to improve the contrast. The polarization axis rotating plate is a combination of a linear polarizer and a 1 / 2 retardation plate, and the linear polarization axis and the 1 / 2 retardation axis are combined at an angle of 45 degrees. At this time, as shown in FIG. 60, by arranging the linear polarization axis of the polarization axis rotating plate at an angle of 45 degrees with respect to the transmission polarization axis of the wire grid polarizer 250, the extraction efficiency of the light emitted from the EL element 142 can be greatly improved.

[0235] The direction of the transmission polarization axis of the wire grid polarizer 250 can be freely set by changing the direction in which the metal fine wires 258 extend. FIG. 61 shows an example in which a pattern of the metal fine wires 258 is provided in the region surrounded by the scanning signal line 106 and the data signal line 108 (the region of the sub-pixel 105). As shown in FIG. 61, the metal fine wires 258 have a pattern extending in a direction parallel to the direction in which the scanning signal line 106 extends, so that the transmission polarization axis is parallel to the direction in which the data signal line 1 08 extends. Although not shown, the metal fine wires 258 may have a pattern extending in a direction parallel to the direction in which the data signal line 108 extends. FIG. 62 shows an example in which the pattern of the metal fine wires 258 is arranged at a predetermined angle with respect to the scanning signal line 106 and the data signal line 108, so that the transmission polarization axis is arranged in a direction perpendicular to the longitudinal direction of the metal fine wires 258.

[0236] FIG. 57 shows an example in which the wire grid polarizer 250 is provided so as to be embedded in the planarization layer 246. The metal fine wires 258 are formed to have a thickness of about 100 nm to 200 nm. By providing such metal fine wires 258 so as to be embedded in the planarization film 246, the wire grid ​​​​​​Even if the odd polarizer 250 is provided in the so-called in-cell form, the EL element 14 2 can be provided without inhibiting flatness.

[0237] FIG. 66 shows an example in which a wire grid polarizer 250 is provided on the upper surface of the first electrode 220. The metal fine wires 258 and the light absorption layer 256 constituting the wire grid polarizer 250 are formed on the transparent conductive film forming the first electrode 220. The metal fine wires 258 and the light absorption layer 256 form an uneven structure on the upper surface of the first electrode 220. However, by providing the electron transport layer 222 with a coating-type material so as to embed the metal fine wires 258, the light-emitting layer 226 is not affected, and a short circuit with the second electrode 232 can be prevented.

[0238] FIG. 67 shows a plan view of the first electrode 220 and the metal fine wires 258. The metal fine wires 258 are provided on the transparent conductive film forming the first electrode 220. The metal fine wires 258 are formed so as to extend from one end side of the first electrode 220 to the other end side. Further, as shown in FIG. 67, a metal pattern surrounding the outer periphery of the first electrode 238 is provided with the metal film forming the metal fine wires 258, and by connecting the metal fine wires 258, the low resistance of the transparent conductive film (first electrode 220) can be achieved.

[0239] As shown in the present embodiment, by providing the wire grid polarizer 250 in the layer forming the touch and fingerprint sensor-equipped display device 100, even if a polarization axis rotation plate is provided to improve contrast, the light extraction efficiency can be greatly improved.

[0240] [Embodiment 10] This embodiment shows a further barrier against the sealing structure and the structure of the lead wiring shown in the first embodiment.

[0241] FIG. 63A shows a structure in which the second sensor electrode 114 is connected to a wiring or a circuit on the transparent resin substrate 200 by a lead wiring 147 formed on the same layer as the data signal line 108. The lead wiring 147 is provided on the first insulating layer 210 and is connected to a contact hole 159 penetrating the first insulating layer 210, the fourth transparent resin layer 202d, and the third transparent resin layer 202c. A second insulating layer 212 is provided on the first lead wiring 147 and the first contact hole 159, and is further covered with a silicon nitride film 214c, thereby preventing invasion of moisture from the outside.

[0242] FIG. 63B shows a structure in which the second sensor electrode 114 is connected to a wiring or a circuit on the transparent resin substrate 200 by a lead wiring 147 formed on the same layer as the scanning signal line 106 or the second scanning signal line 107. This lead wiring 147 is provided on the second insulating layer 212, and is connected to a first lead wiring 147a formed on the same layer as the shield electrode 116 on the third transparent resin layer 202c by a contact hole 159 penetrating the second insulating layer 212, the first insulating layer 210, and the fourth transparent resin layer 202d. Further, the first lead wiring 147a is connected to the second sensor electrode 114 by a contact hole 169 formed in the third transparent resin layer 202c. With such a structure as well, the second sensor electrode 114 can be connected to a wiring or a circuit on the transparent resin substrate 2 00. 00.

[0243] FIG. 64A shows a structure in which, with respect to the structure shown in FIG. 22A, the lead wiring 147 is provided on the second insulating layer 212. The lead wiring 147 is formed on the same layer as the second scanning signal line 107. ​​​​​Since the upper part of the lead wiring 147 is covered with the silicon nitride film 214c, the lead wiring 147 has a structure that extends outward so as to form the second connection terminal 146b. Even in this structure, a structure that is in close contact with the sealing layer 236 can be formed, and the reliability can be improved. .

[0244] FIG. 64B shows the connection structure between the second electrode 232 and the third connection terminal 146c. The second electrode 232 is drawn out to the end of the transparent resin substrate 200 and is connected to the lead wiring 147 formed in the same layer as the second scanning signal line 107. The lead wiring 147 has a structure that extends outward so as to form the third connection terminal 146 c. Even in this structure, since the lead wiring 14 7 is covered with the silicon nitride film 214c, a structure that is in close contact with the sealing layer 236 can be formed, and the reliability can be improved.

[0245] FIG. 65A shows the connection structure between the data signal line 108 and the first connection terminal 146a. The data signal line 108 is drawn out to the end of the transparent resin substrate 200 and is connected to the lead wiring 147 formed in the same layer as the second scanning signal line 107. This lead wiring 147 has a structure that extends outward so as to form the first connection terminal 146a. Even in this structure, since the lead wiring 147 is covered with the silicon nitride film 214c, a structure that is in close contact with the sealing layer 236 can be formed, and the reliability can be improved.

[0246] FIG. 65B shows a structure in which the lead wiring 147 is directly connected to the second sensor electrode 114 through the contact hole 159 that penetrates the second insulating layer 212, the first insulating layer 210, the fourth transparent resin layer 202d, and the third transparent resin layer 202c with respect to FIG. 63B. With such a configuration, the lead wiring 147 can be directly connected to the second sensor electrode 114. However, the second sensor electrode 114 can be connected to the wiring or circuit on the transparent resin substrate 200. It is possible.

[0247] In FIGS. 16, 19, 21, 49, 53, and 55, external light incident on the display panel from the outside is reflected by various metals constituting the display panel and then emitted back to the outside again, resulting in a significant decrease in contrast. To prevent such a decrease in contrast, in practice, a circular polarizing plate (an optical member formed by combining a linear polarizing plate and a quarter-wave plate) is installed in close contact with the transparent resin layer 202a, but it is omitted in the above drawings. When external light is incident, it is reflected by various electrodes and wirings formed of metal materials constituting the display panel and then emitted back to the outside again, resulting in a significant decrease in contrast. To prevent such a decrease in contrast, it is preferable to provide a light absorption layer similar to the light absorption layer 256 constituting the wire grid polarizer 250 under the electrodes and wirings formed of the metal material constituting the display panel, but it is omitted in the above drawings. This significantly reduces the contrast. To prevent such a decrease in contrast, In fact, a circular polarizing plate (an optical material formed by combining a linear polarizing plate and a quarter-wave plate) is installed so as to be in close contact with the transparent resin layer 202a, but it is omitted in the above drawings. However, it is omitted in the above drawings. It is omitted.

[0248] FIGS. 56, 57, and 66 show a display panel incorporating a wire grid polarizer 250 to improve the light extraction efficiency. When external light is incident, it is reflected by various electrodes and wirings formed of metal materials constituting the display panel and then emitted back to the outside again, resulting in a significant decrease in contrast. To prevent such a decrease in contrast, When external light is incident, it is reflected by various electrodes and wirings formed of metal materials constituting the display panel and then emitted back to the outside again, resulting in a significant decrease in contrast. To prevent such a decrease in contrast, However, it is omitted in the above drawings. This significantly reduces the contrast. To prevent such a decrease in contrast, It is preferable to provide a light absorption layer similar to the light absorption layer 256 constituting the wire grid polarizer 250 under the electrodes and wirings formed of the metal material constituting the display panel, but it is omitted in the above drawings. However, it is omitted in the above drawings.

Explanation of Reference Numerals

[0249] 100... Touch and fingerprint sensor-equipped display device, 102... Display unit, 104... Pixel, 105... Sub-pixel, 106... Scanning signal line, 107... Second scanning signal line, 10 8... Data signal line, 110... Touch and fingerprint sensor unit, 112... First sensor electrode, 114... Second sensor electrode, 116... Fingerprint sensor, 118... Electrode, 114... Second sensor electrode, 116... Shield electrode, 118... First drive circuit, 118b... Output switching circuit, 118c... Scanning signal line drive circuit, 118d... ... Scan circuit, 120... Switching circuit, 122... Terminal section, 124... Sealing layer, 1 25... Driver IC, 126... Flexible circuit board, 127... Film base material, 128... Second drive circuit, 129... Wiring group, 130... Scanning signal line drive circuit block, 132... Data signal line drive circuit block, 134... Touch and fingerprint sen sor detection circuit block, 135... Pad, 136... Drive transistor, 137... ... Light emission control transistor, 138... Selection transistor (first transistor), 13 9... Second transistor, 140... Capacitive element, 142... EL element, 141... ... First switching element, 143... Output switching signal line, 144a... Common electrode, 1 44b... Common wiring, 145... Second switching element, 146... Connection terminal, 147... Lead-out wiring, 148... Connection terminal, 149... Sixth connection terminal, 150 ... First gate electrode, 151... Second gate electrode, 152... First gate electrode, 1 53... Second gate electrode, 154... Power supply line, 156... Switching element, 15 7... Control signal line, 158... First opening, 159... First contact hole, 1 60... Second opening, 161... Second contact hole, 162... Third opening, 163... Third contact hole, 164... Fourth opening, 165... Fourth conta ct hole, 166... Fifth contact hole, 168... Seventh contact hole, 169... Contact hole, 170... Source wiring, 171... Eighth contact Hole, 172 ··· Connection wiring, 173 ··· Drain wiring, 174 ··· Source electrode, 175 ··· Ninth contact hole, 176 ··· Metal oxide conductive layer, 180 ··· Oxide Semiconductor layer, 200 ··· Transparent resin substrate, 202 ··· Transparent resin layer, 204 ··· First sen sor electrode layer, 205 ··· First auxiliary electrode, 206 ··· Second sensor electrode layer, 207 ··· First Second auxiliary electrode, 208 ··· Light shielding layer, 210 ··· First insulating layer, 212 ··· Second insulating layer, 214 ··· Silicon nitride film, 215 ··· Silicon oxide film, 216 ··· Third insulating layer, 220 ··· First electrode, 222 ··· Electron transport layer, 224 ··· Electron injection layer, 226 ·· · Light emitting layer, 227 ··· Electron blocking layer, 228 ··· Hole transport layer, 230 ··· Positive hole injection layer, 232 ··· Second electrode, 234 ··· Third opening, 236 ··· Sealing layer, 23 7 ··· Silicon carbonitride film, 238 ··· Silicon nitride film, 240 ··· Division region, 2 42 ··· Conductive particles, 244 ··· Resin, 246 ··· Planarization layer, 248 ··· Pass ivation layer, 250 ··· Wire grid polarizer, 251 ··· Light scattering layer, 252 ·· · Beads, 254 ··· Adhesive ink, 256 ··· Light absorption layer, 258 ··· Metal fine wire, 2 60 ··· Insulating layer, 262 ··· Partition wall, 264 ··· Eighth contact hole, 266 ·· · First gate electrode, 268 ··· Second gate electrode, 270 ··· Second capacitor element, 272 · · Capacitor electrode, 274 ··· Second capacitor element

Claims

1. A first sensor electrode extends in a first direction, and a second sensor electrode extends in a second direction intersecting the first direction. a sensor portion including a sensor electrode; A display unit including an area overlapping the sensor unit; a shield electrode sandwiched between the sensor unit and the display unit; a first insulating layer between the first sensor electrode and the second sensor electrode and the shield electrode; and, a second insulating layer between the shield electrode and the display unit; having the display unit includes a transistor overlapping the second sensor electrode, the shield electrode has an opening in a region overlapping with the second sensor electrode, The transistor has a gate electrode, and the gate electrode is connected to the first insulating layer and the a contact hole penetrating the second insulating layer, and electrically connected to the second sensor electrode; the contact hole overlaps with the opening and has a smaller diameter than the opening; A display device with a touch and fingerprint sensor.

2. an auxiliary electrode extending in the second direction; The auxiliary electrode is provided in contact with an upper surface of the second sensor electrode. The display device with touch and fingerprint sensor according to claim 1 .

3. The contact hole overlaps with the auxiliary electrode, and the gate electrode is electrically connected to the auxiliary electrode. the auxiliary electrodes also function as scanning signal lines; The display device with touch and fingerprint sensor according to claim 2 .

4. The transistor is provided on the second insulating layer and has a region overlapping with the gate electrode. A semiconductor layer having The semiconductor layer is disposed so as to overlap the second sensor electrode. The display device with touch and fingerprint sensor according to claim 3 .

5. a light-shielding layer overlapping the semiconductor layer; the light-shielding layer is formed of a conductive layer extending from the auxiliary electrode; The display device with touch and fingerprint sensor according to claim 4 .

6. a second gate electrode overlapping the semiconductor layer; the second gate electrode is in contact with the shield electrode; The display device with touch and fingerprint sensor according to claim 4 .

7. The contact hole is provided in a region outside the semiconductor layer. The display device with touch and fingerprint sensor according to claim 4 .

8. the first sensor electrode, the second sensor electrode, and the shield electrode are light-transmitting; The width of the second sensor electrode is greater than the width of the auxiliary electrode. The display device with touch and fingerprint sensor according to claim 2 .

9. A first sensor electrode extends in a first direction, and a second sensor electrode extends in a second direction intersecting the first direction. a sensor portion including a sensor electrode; A display unit including an area overlapping the sensor unit; A peripheral area outside the display unit; a shield electrode sandwiched between the sensor unit and the display unit; a first insulating layer between the first sensor electrode and the second sensor electrode and the shield electrode; and, a second insulating layer between the shield electrode and the display unit; having the display unit includes a transistor overlapping the second sensor electrode and a scanning signal line; the second sensor electrode is provided from the display unit to the peripheral region, The shield electrode has an opening in a region overlapping with the second sensor electrode in the peripheral region. Having a department, The transistor has a gate electrode extending from the scanning signal line, The scanning signal line is provided on the second insulating layer, and the first insulating layer and the second insulating layer a contact hole penetrating the first sensor electrode and electrically connecting the second sensor electrode to the second sensor electrode; the contact hole overlaps with the opening and has a smaller diameter than the opening; A display device with a touch and fingerprint sensor.

10. an auxiliary electrode extending in the second direction; The auxiliary electrode is disposed so as to overlap the scanning signal line and is in contact with an upper surface of the second sensor electrode. The system is set up as follows: The display device with touch and fingerprint sensor according to claim 9.

11. The contact hole overlaps with the auxiliary electrode, and the scanning signal line is electrically connected to the auxiliary electrode. are actively connected, The display device with touch and fingerprint sensor according to claim 10.

12. The transistor is provided on the second insulating layer and has a region overlapping with the gate electrode. A semiconductor layer having The semiconductor layer is disposed so as to overlap the second sensor electrode. The display device with touch and fingerprint sensor according to claim 11.

13. a light-shielding layer overlapping the semiconductor layer; the light-shielding layer is formed of a conductive layer formed in the same layer as the auxiliary electrode; The display device with touch and fingerprint sensor of claim 12.

14. a second gate electrode overlapping the semiconductor layer; the second gate electrode is in contact with the shield electrode; The display device with touch and fingerprint sensor of claim 12.

15. A plurality of the contact holes are provided on one end side of the scanning signal line. The display device with touch and fingerprint sensor of claim 12.

16. the first sensor electrode, the second sensor electrode, and the shield electrode are light-transmitting; The width of the second sensor electrode is wider than the width of the scanning signal line and the auxiliary electrode. The display device with touch and fingerprint sensor according to claim 10.

Images