Semiconductor device

Abstract

A semiconductor device (10) is provided with: a first switching element (30A); a driver (40) positioned so as to be displaced with respect to the first switching element (30A) in the z-direction, the driver (40) driving the first switching element (30A); a first resin layer (50A) for sealing the first switching element (30A); and a first control via conductor (81) penetrating through the first resin layer (50A) in the z-direction and electrically connecting the first switching element (30A) and the driver (40).

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device.

Background Art

[0002] Conventionally, a semiconductor device in which a plurality of semiconductor elements are encapsulated with a sealing resin to form a package has been known. For example, the semiconductor device of Patent Document 1 has a configuration in which a switching element and a driver for driving the switching element are encapsulated with a sealing resin. The switching element is a transistor and has a control pad electrode (gate electrode). The driver has a pad electrode that is electrically connected to the control pad electrode. The control pad electrode of the switching element and the pad electrode of the driver are connected by a bonding wire.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] By the way, when connecting the control pad electrode of the switching element and the pad electrode of the driver with a bonding wire, since the wire is formed in a curved convex shape, it is difficult to shorten the length of the wire. For this reason, it becomes difficult to shorten the conductive path between the control pad electrode of the switching element and the pad electrode of the driver, and there is room for improvement in reducing the inductance caused by the length of this conductive path.

[0005] An object of the present disclosure is to provide a semiconductor device capable of reducing inductance.

Means for Solving the Problems

[0006] The semiconductor device for solving the above problems includes a switching element and a resin layer that seals at least the switching element, and is a semiconductor device with the thickness direction of the resin layer as the height direction. In the height direction of the semiconductor device, it is arranged offset from the switching element, and includes a driver for driving the switching element, and a control via conductor that penetrates the resin layer in the height direction of the semiconductor device and electrically connects the switching element and the driver.

[0007] According to this configuration, the switching element and the driver are arranged offset in the height direction of the semiconductor device, and the control via conductor penetrates the resin layer in the height direction of the semiconductor device, so that the switching element and the driver are electrically connected. Thereby, compared with the configuration in which the switching element and the driver are arranged on the same plane and both are connected by wires, the conductive path between the switching element and the driver is likely to be shortened. Therefore, the inductance caused by the length of the conductive path can be reduced.

Effect of the Invention

[0008] According to the above semiconductor device, the inductance can be reduced.

Brief Description of the Drawings

[0009]

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Embodiments for Carrying Out the Invention

[0010] Hereinafter, embodiments of a semiconductor device will be described with reference to the drawings. The embodiments shown below illustrate configurations and methods for embodying the technical idea, and do not limit the materials, shapes, structures, arrangements, dimensions, etc. of each component to those described below. The following embodiments can be variously modified.

[0011] (Configuration of Semiconductor Device) With reference to FIGS. 1 to 9, an embodiment of a semiconductor device 10 will be described. As shown in FIG. 1, the semiconductor device 10 is formed in a rectangular flat plate shape. The semiconductor device 10 has a device front surface 11 and a device back surface 12 facing opposite sides to each other, and a direction intersecting both the device front surface 11 and the device back surface 12 extends to device side surfaces 13 to 16. In the present embodiment, the device side surfaces 13 to 16 are in a direction orthogonal to both the device front surface 11 and the device back surface 12 extends being.

[0012] The front surface 11 of the device and the back surface 12 of the device are arranged to be spaced apart from each other. In the following description, the arrangement direction between the front surface 11 of the device and the back surface 12 of the device is defined as the z direction. Note that the z direction can also be said to be the height direction of the semiconductor device 10. Of the two directions orthogonal to the z direction that are orthogonal to each other, they are defined as the x direction and the y direction, respectively. In the present embodiment, when viewed from the z direction, the side surfaces 13 and 14 of the device are surfaces along the x direction, and the side surfaces 15 and 16 of the device are surfaces along the y direction. The side surfaces 13 and 14 of the device are surfaces facing opposite sides in the y direction, and the side surfaces 15 and 16 of the device are surfaces facing opposite sides in the x direction. In the present embodiment, the shape of the semiconductor device 10 when viewed from the z direction is a rectangular shape in which the x direction is the short side direction and the y direction is the long side direction.

[0013] The semiconductor device 10 includes a substrate 20, a switching element 30 mounted on the substrate 20, a driver 40 for driving the switching element 30, and a sealing resin 50 which is an example of a resin layer laminated on the substrate 20 and sealing the switching element 30 and the driver 40. In the present embodiment, the switching element 30 includes a first switching element 30A and a second switching element 30B. That is, the semiconductor device 10 has a plurality of switching elements 30. The driver 40 includes a drive circuit for driving each of the plurality of switching elements 30. More specifically, the driver 40 includes a drive circuit for driving each of the first switching element 30A and the second switching element 30B.

[0014] The substrate 20 is made of a material having electrical insulation properties, for example, made of an epoxy resin. The substrate 20 has a conductor portion 60 that is electrically connected to the switching element 30 and the driver 40. That is, the substrate 20 can also be said to be a wiring layer that is electrically connected to the switching element 30 and the driver 40.

[0015] As shown in FIG. 2, the substrate 20 is formed in a rectangular plate shape and constitutes the device back surface 12 and a part of each of the device side surfaces 13 to 16 in the z direction. The substrate 20 has a substrate front surface 21 and a substrate back surface 22 (see FIG. 5) facing opposite sides in the z direction, and a direction orthogonal to both the substrate front surface 21 and the substrate back surface 22 extends to and substrate side surfaces 23 to 26. The substrate front surface 21 faces the same side as the device front surface 11 (see FIG. 1), and the substrate back surface 22 faces the same side as the device back surface 12 (see FIG. 1). That is, the substrate back surface 22 constitutes the device back surface 12. The substrate side surface 23 faces the same side as the device side surface 13, the substrate side surface 24 faces the same side as the device side surface 14, the substrate side surface 25 faces the same side as the device side surface 15, and the substrate side surface 26 faces the same side as the device side surface 16. The shape of the substrate 20 viewed from the z direction is a rectangular shape with the x direction being the short side direction and the y direction being the long side direction.

[0016] As shown in FIG. 1, the encapsulation resin 50 is formed in a rectangular plate shape and constitutes the device front surface 11 and a part of each of the device side surfaces 13 to 16 in the z direction. The encapsulation resin 50 is laminated on the substrate front surface 21 of the substrate 20. The length of the encapsulation resin 50 in the z direction is longer than the length of the substrate 20 in the z direction. In other words, the thickness of the encapsulation resin 50 is thicker than the thickness of the substrate 20. The encapsulation resin 50 is made of a material having electrical insulation properties, and in this embodiment, it is made of a black epoxy resin.

[0017] As shown in FIGS. 1 and 4, the encapsulation resin 50 has a resin front surface 51 (see FIG. 5) and a resin back surface 52 facing opposite sides in the z direction, and a direction orthogonal to both the resin front surface 51 and the resin back surface 52 extends toIt has resin side surfaces 53 to 56. The resin main surface 51 faces the same side as the device main surface 11 (substrate main surface 21), and the resin back surface 52 faces the same side as the device back surface 12 (substrate back surface 22). That is, the resin main surface 51 constitutes the device main surface 11. The resin side surface 53 faces the same side as the device side surface 13 (substrate side surface 23), the resin side surface 54 faces the same side as the device side surface 14 (substrate side surface 24), the resin side surface 55 faces the same side as the device side surface 15 (substrate side surface 25), and the resin side surface 56 faces the same side as the device side surface 16 (substrate side surface 26). When viewed from the z direction, the shape of the encapsulation resin 50 is a rectangular shape with the y direction being the long side direction and the x direction being the short side direction. As shown in FIG. 1, in this embodiment, the resin side surface 53 and the substrate side surface 23 are flush, the resin side surface 54 and the substrate side surface 24 are flush, the resin side surface 55 and the substrate side surface 25 are flush, and the resin side surface 56 and the substrate side surface 26 are flush.

[0018] As shown in FIGS. 1 and 5, the encapsulation resin 50 has a first resin layer 50A formed on the substrate main surface 21 and a second resin layer 50B laminated on the first resin layer 50A. As shown in FIG. 5, the thickness direction of the first resin layer 50A coincides with the z direction. That is, it can also be said that the thickness direction of the first resin layer 50A is the height direction of the semiconductor device 10. As shown in FIG. 5, the length of the first resin layer 50A in the z direction is shorter than the length of the second resin layer 50B in the z direction. In other words, the thickness of the first resin layer 50A is thinner than the thickness of the second resin layer 50B. An interface 57 is formed at the boundary between the first resin layer 50A and the second resin layer 50B.

[0019] Next, the internal structure of the semiconductor device 10 will be described. As shown in FIGS. 2 and 3, the conductor part 60 is provided so as to penetrate the substrate 20 in the z direction. In other words, the conductor part 60 is exposed from both the substrate main surface 21 and the substrate back surface 22. The conductor part 60 is made of a conductive material, for example, a laminate of Ti (titanium) and Cu (copper). The conductor part 60 has a power supply wiring 61, a ground wiring 62, an output wiring 63, and a plurality (14 in this embodiment) of control wirings 64.

[0020] The power supply wiring 61, the ground wiring 62, and the output wiring 63 constitute a driving wiring through which a driving current supplied to the switching element 30 flows in the conductor portion 60 of the semiconductor device 10. As shown in FIG. 2, the power supply wiring 61, the ground wiring 62, and the output wiring 63 are arranged closer to the substrate side surface 24 than the substrate side surface 23 in the y direction. In the present embodiment, the power supply wiring 61, the ground wiring 62, and the output wiring 63 are arranged closer to the substrate side surface 24 than the center of the substrate main surface 21 in the y direction. The power supply wiring 61, the ground wiring 62, and the output wiring 63 are arranged at intervals from each other in the x direction in a state of being aligned with each other in the y direction.

[0021] Viewed from the z direction, each of the power supply wiring 61, the ground wiring 62, and the output wiring 63 is formed in a strip shape extending along the y direction. In the present embodiment, the length of the power supply wiring 61 in the x direction is equal to the length of each of the ground wiring 62 and the output wiring 63 in the x direction. In other words, the width dimension of the power supply wiring 61 is equal to the width dimension of each of the ground wiring 62 and the output wiring 63. Note that the length of the output wiring 63 in the x direction may be longer than the length of each of the power supply wiring 61 and the ground wiring 62 in the x direction. In other words, the width dimension of the output wiring 63 may be larger than the width dimension of the power supply wiring 61 and the width dimension of the ground wiring 62. Also, the length of the power supply wiring 61 in the y direction, the length of the ground wiring 62 in the y direction, and the length of the output wiring 63 in the y direction are equal to each other.

[0022] The output wiring 63 is arranged between the power supply wiring 61 and the ground wiring 62 in the x direction. The power supply wiring 61 is arranged closer to the substrate side surface 25 than the output wiring 63. The ground wiring 62 is arranged closer to the substrate side surface 26 than the output wiring 63.

[0023] The plurality of control wirings 64 are arranged closer to the substrate side surface 23 than the substrate side surface 24 in the y direction. In the present embodiment, the plurality of control wirings 64 are arranged closer to the substrate side surface 23 than the center of the substrate main surface 21 in the y direction. Further, the plurality of control wirings 64 are arranged closer to the substrate side surface 23 than each of the power supply wiring 61, the ground wiring 62, and the output wiring 63 in the y direction. A plurality of the control wirings 64 are arranged at both ends of the substrate main surface 21 in the x direction and at both ends of the substrate main surface 21 in the y direction, closer to the substrate side surface 23. In the present embodiment, three control wirings 64 are arranged at intervals in the y direction while being aligned in the x direction at the end of both ends of the substrate main surface 21 in the x direction, closer to the substrate side surface 25. Four control wirings 64 are arranged at intervals in the y direction while being aligned in the x direction at the end of both ends of the substrate main surface 21 in the x direction, closer to the substrate side surface 26. Seven control wirings 64 are arranged at intervals in the x direction while being aligned in the y direction at the end of both ends of the substrate main surface 21 in the y direction, closer to the substrate side surface 23.

[0024] As shown in FIG. 3, on the back surface 22 of the substrate, an exterior terminal 70 for electrically connecting the semiconductor device 10 to an external electronic device or the like is provided. The exterior terminal 70 is composed of, for example, a laminate of a Ni (nickel) layer, a Pd (palladium) layer, and an Au (gold) layer.

[0025] The external terminals 70 include a power supply terminal 71, a ground terminal 72, an output terminal 73, and a plurality (14 in this embodiment) of control terminals 74. As shown in FIGS. 5 to 8, the power supply terminal 71 is laminated on the surface of the power supply wiring 61 that is exposed from the back surface 22 of the substrate. The ground terminal 72 is laminated on the surface of the ground wiring 62 that is exposed from the back surface 22 of the substrate. The output terminal 73 is laminated on the surface of the output wiring 63 that is exposed from the back surface 22 of the substrate. The plurality of control terminals 74 are individually laminated on the surface of the plurality of control wirings 64 that are exposed from the back surface 22 of the substrate. Thereby, the power supply terminal 71 is electrically connected to the power supply wiring 61, the ground terminal 72 is electrically connected to the ground wiring 62, the output terminal 73 is connected to the output wiring 63, and the plurality of control terminals 74 are individually electrically connected to the plurality of control wirings 64.

[0026] As shown in FIG. 2, a first switching element 30A and a second switching element 30B are mounted on the main surface 21 of the substrate. In this embodiment, each of the switching elements 30A and 30B is joined to the main surface 21 of the substrate by a joining material. The joining material is an adhesive such as an epoxy resin or a silicone resin. Each of the switching elements 30A and 30B is, for example, a transistor. In this embodiment, each of the switching elements 30A and 30B has a gallium nitride high electron mobility transistor (GaNHEMT). In this embodiment, the same size of GaNHEMT is used for each of the switching elements 30A and 30B. The shape of each of the switching elements 30A and 30B viewed from the z direction is a rectangular shape having a long side direction and a short side direction. In this embodiment, each of the switching elements 30A and 30B is arranged on the main surface 21 of the substrate such that the y direction is the long side direction and the x direction is the short side direction. As shown in FIG. 2, in this embodiment, the length of each of the switching elements 30A and 30B in the y direction is shorter than the length of the power supply wiring 61, the ground wiring 62, and the output wiring 63 in the y direction.

[0027] As shown in FIG. 2, the first switching element 30A is disposed between the power supply wiring 61 and the output wiring 63 in the x direction. The center of the first switching element 30A in the y direction is disposed closer to the substrate side surface 23 than the centers in the y direction of the power supply wiring 61 and the output wiring 63, respectively, in the y direction. In the present embodiment, the first switching element 30A is disposed on the substrate main surface 21 such that the first control pad electrode 31AC is at a corner near the substrate side surface 23 and the substrate side surface 26 among the four corners of the first element main surface 31A.

[0028] The second switching element 30B is disposed between the output wiring 63 and the ground wiring 62 in the x direction. The center of the second switching element 30B in the y direction is disposed closer to the substrate side surface 23 than the centers in the y direction of the output wiring 63 and the ground wiring 62, respectively, in the y direction. In the present embodiment, the second switching element 30B is disposed on the substrate main surface 21 such that the second control pad electrode 31BC is at a corner near the substrate side surface 23 and the substrate side surface 25 among the four corners of the second element main surface 31B.

[0029] The first switching element 30A has a first element main surface 31A and a first element back surface 32A facing opposite sides in the z direction. The first element main surface 31A faces the same side as the device main surface 11 (substrate main surface 21), and the first element back surface 32A faces the same side as the device back surface 12 (substrate back surface 22). On the first element main surface 31A, a first drive pad electrode 31AA, a second drive pad electrode 31AB, and a first control pad electrode 31AC are formed. In the present embodiment, the first drive pad electrode 31AA constitutes the drain electrode of the first switching element 30A, the second drive pad electrode 31AB constitutes the source electrode of the first switching element 30A, and the first control pad electrode 31AC constitutes the gate electrode of the first switching element 30A.

[0030] Viewed from the z - direction, the first control pad electrode 31AC is disposed at one of the four corners of the first element main surface 31A. The first drive pad electrode 31AA and the second drive pad electrode 31AB are arranged along the short - side direction of the first switching element 30A. In the short - side direction of the first switching element 30A, the first drive pad electrode 31AA is disposed closer to the power supply wiring 61 than the second drive pad electrode 31AB. In other words, the second drive pad electrode 31AB is disposed closer to the output wiring 63 than the first drive pad electrode 31AA. The first control pad electrode 31AC is surrounded by the first drive pad electrode 31AA and the second drive pad electrode 31AB from one side in the long - side direction and one side in the short - side direction of the first switching element 30A.

[0031] The second switching element 30B has a second element main surface 31B and a second element back surface 32B that face opposite sides in the z - direction. The second element main surface 31B faces the same side as the device main surface 11 (substrate main surface 21), and the second element back surface 32B faces the same side as the device back surface 12 (substrate back surface 22). On the second element main surface 31B, a first drive pad electrode 31BA, a second drive pad electrode 31BB, and a second control pad electrode 31BC are formed. In this embodiment, the first drive pad electrode 31BA constitutes the drain electrode of the second switching element 30B, the second drive pad electrode 31BB constitutes the source electrode of the second switching element 30B, and the second control pad electrode 31BC constitutes the gate electrode of the second switching element 30B.

[0032] When viewed from the z-direction, the second control pad electrode 31BC is disposed at one of the four corners of the second element main surface 31B. The first drive pad electrode 31BA and the second drive pad electrode 31BB are arranged along the short side direction of the second switching element 30B. In the short side direction of the second switching element 30B, the first drive pad electrode 31BA is disposed closer to the output wiring 63 than the second drive pad electrode 31BB. In other words, the second drive pad electrode 31BB is disposed closer to the ground wiring 62 than the first drive pad electrode 31BA. The second control pad electrode 31BC is surrounded by the first drive pad electrode 31BA and the second drive pad electrode 31BB from one side in the long side direction and one side in the short side direction of the second switching element 30B.

[0033] As described above, each of the switching elements 30A and 30B is a lateral transistor in which a drain electrode, a source electrode, and a gate electrode are formed on one surface facing the z-direction. Note that each of the switching elements 30A and 30B is not limited to a gallium nitride high electron mobility transistor, and may be a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) containing Si (silicon) or a MOSFET containing SiC (silicon carbide).

[0034] As shown in FIG. 5, each of the switching elements 30A and 30B is sealed by a first resin layer 50A. The first resin layer 50A is formed over the entire surface of the substrate main surface 21. That is, the conductor portion 60 is covered by the first resin layer 50A.

[0035] As shown in FIGS. 2 and 4, when viewed from the z direction, the driver 40 is disposed at a position overlapping a part of each of the switching elements 30A and 30B. More specifically, when viewed from the z direction, the driver 40 is disposed so as to overlap both the first control pad electrode 31AC of the first switching element 30A and the second control pad electrode 31BC of the second switching element 30B. As shown in FIGS. 1 and 2, the driver 40 is formed in a rectangular plate shape having a shorter length in the z direction than the lengths in the x and y directions. As shown in FIG. 2, in the present embodiment, the shape of the driver 40 when viewed from the z direction is a rectangular shape in which the y direction is the long side direction and the x direction is the short side direction. Note that the shape of the driver 40 when viewed from the z direction can be arbitrarily changed. In one example, the shape of the driver 40 when viewed from the z direction is a rectangular shape in which the x direction is the short side direction and the y direction is the long side direction. Note that the shape of the driver 40 when viewed from the z direction can be arbitrarily changed. In one example, the shape of the driver 40 when viewed from the z direction may be a square.

[0036] As shown in FIG. 5, the driver 40 has a driver front surface 41 and a driver back surface 42 facing opposite sides in the z direction. The driver front surface 41 faces the same side as the device front surface 11, and the driver back surface 42 faces the same side as the device back surface 12. Further, the driver 40 has a plurality of driver pad electrodes 43. Each driver pad electrode 43 is exposed from the driver back surface 42.

[0037] As shown in FIGS. 2 and 4, the driver 40 is disposed at the center of the semiconductor device 10 in the x direction. In the y direction, the driver 40 is disposed offset toward the device side surface 13 (substrate side surface 23, resin side surface 53) with respect to each of the switching elements 30A and 30B. As shown in FIGS. 5 and 6, the driver 40 is disposed offset in the z direction with respect to each of the switching elements 30A and 30B. That is, as shown in FIG. 6, the driver 40 is disposed offset with respect to each of the switching elements 30A and 30B in both the y direction and the z direction.

[0038] As shown in FIG. 5, the driver 40 is disposed closer to the main surface 11 of the device than each of the switching elements 30A and 30B in the z direction. In the present embodiment, the driver 40 is disposed closer to the main surface 11 of the device than the first element main surface 31A of the first switching element 30A and the second element main surface 31B of the second switching element 30B in the z direction. More specifically, the driver 40 is disposed closer to the main surface 11 of the device than the element main surfaces 31A and 31B of each of the switching elements 30A and 30B in the z direction, and is spaced apart from the element main surfaces 31A and 31B in the z direction. Specifically, the driver 40 is disposed on the first resin layer 50A and is sealed by the second resin layer 50B. The driver 40 is joined to the wiring portion 80 by a conductive bonding material such as solder or Ag paste.

[0039] As shown in FIG. 5, in the present embodiment, the thickness of the portion of the first resin layer 50A that covers each of the switching elements 30A and 30B is thinner than the thickness of the portion of the second resin layer 50B that covers the driver 40. For this reason, the distance in the z direction between the back surface 42 of the driver 40 and the element main surfaces 31A and 31B of each of the switching elements 30A and 30B is shortened. Here, the thickness of the portion of the first resin layer 50A that covers each of the switching elements 30A and 30B is defined by the distance in the z direction between the element main surfaces 31A and 31B of each of the switching elements 30A and 30B and the interface 57 between the first resin layer 50A and the second resin layer 50B. Further, the thickness of the portion of the second resin layer 50B that covers the driver 40 is defined by the distance D in the z direction between the main surface 41 of the driver 40 and the surface of the second resin layer 50B on the side opposite to the first resin layer 50A.

[0040] In the present embodiment, the driver 40 is an integrated circuit including a drive circuit that drives each of the switching elements 30A and 30B. The driver 40 turns on and off each of the switching elements 30A and 30B complementarily based on a signal input from the outside of the semiconductor device 10.

[0041] As shown in FIG. 4, the semiconductor device 10 includes a wiring portion 80 that electrically connects each of the switching elements 30A and 30B, the driver 40, and the conductor portion 60. The wiring portion 80 is provided in the encapsulation resin 50. That is, each of the switching elements 30A and 30B, the driver 40, and the conductor portion 60 are electrically connected inside the semiconductor device 10. The wiring portion 80 is made of, for example, a laminate of Ti and Cu.

[0042] The wiring portion 80 has a first control via conductor 81, a second control via conductor 82, a power supply connection conductor 83, a ground connection conductor 84, an output connection conductor 85, and a plurality of control connection conductors 86.

[0043] As shown in FIG. 5, the first control via conductor 81 is a conductor that electrically connects the first control pad electrode 31AC of the first switching element 30A and the driver pad electrode 43 of the driver 40. The first control via conductor 81 is provided so as to penetrate the first resin layer 50A in the z direction. In other words, the first control via conductor 81 is provided so as to penetrate a portion of the first resin layer 50A that covers the first element main surface 31A of the first switching element 30A in the z direction. More specifically, the first control via conductor 81 is provided so as to connect the first control pad electrode 31AC of the first switching element 30A and the interface 57 between the first resin layer 50A and the second resin layer 50B. That is, the first control via conductor 81 is provided so as to penetrate, in the z direction, a portion of the first resin layer 50A between the first element main surface 31A of the first switching element 30A and the interface 57.

[0044] Specifically, in the first resin layer 50A, in the portion between the first element main surface 31A of the first switching element 30A and the interface 57, that is, in the portion of the first resin layer 50A that covers the first element main surface 31A of the first switching element 30A, a through hole 58a that penetrates that portion in the z direction is provided. When viewed from the interface 57 side in the z direction, the through hole 58a exposes the first control pad electrode 31AC of the first switching element 30A. In the present embodiment, the first control via conductor 81 is embedded in the through hole 58a. More specifically, the first control via conductor 81 is provided so as to fill the entirety of the through hole 58a. In the present embodiment, the first control via conductor 81 extends along the z direction. Also, the length of the first control via conductor 81 in the z direction is less than 1 mm. In the present embodiment, the length of the first control via conductor 81 in the z direction is on the order of several hundred μm. As shown in FIGS. 2 and 4, in the present embodiment, the shape of the first control via conductor 81 when viewed from the z direction is circular. Also, in the present embodiment, the diameter of the first control via conductor 81 is 100 μm or more and 200 μm or less. Note that the diameter of the first control via conductor 81 can be arbitrarily changed.

[0045] The first control via conductor 81 faces the driver pad electrode 43 of the driver 40 in the z direction. In other words, when viewed from the z direction, the first control via conductor 81 is provided at a position overlapping the driver pad electrode 43. Thus, the driver 40 is disposed at a position where the driver pad electrode 43 faces the first control via conductor 81 in the z direction. In other words, when viewed from the z direction, the driver 40 is disposed at a position where the driver pad electrode 43 overlaps the first control via conductor 81. The driver pad electrode 43 that faces the first control via conductor 81 corresponds to the first driver pad electrode.

[0046] A connection conductor 88a is provided on the first control via conductor 81. The connection conductor 88a is composed of, for example, a laminate of Ti and Cu. The connection conductor 88a is in contact with the first control via conductor 81. The connection conductor 88a covers the entire surface of the first control via conductor 81 in the z direction. A driver pad electrode 43 of the driver 40 is mounted on the connection conductor 88a via a conductive bonding material such as solder. Thereby, the first control via conductor 81 and the driver pad electrode 43 are electrically connected via the connection conductor 88a and the conductive bonding material.

[0047] As shown in FIG. 5, in the present embodiment, the length of the first control via conductor 81 in the z direction is equal to the thickness of the portion of the first resin layer 50A that covers the first element main surface 31A of the first switching element 30A. That is, the length of the first control via conductor 81 in the z direction is shorter than the distance D in the z direction between the driver main surface 41 of the driver 40 and the second resin layer 50B.

[0048] The second control via conductor 82 is a conductor that electrically connects the second control pad electrode 31BC of the second switching element 30B and the driver pad electrode 43 of the driver 40. The second control via conductor 82 is provided so as to penetrate the first resin layer 50A in the z direction. In other words, the second control via conductor 82 is provided so as to penetrate in the z direction the portion of the first resin layer 50A that covers the second element main surface 31B of the second switching element 30B. More specifically, the second control via conductor 82 is provided so as to connect the second control pad electrode 31BC of the second switching element 30B and the interface 57 between the first resin layer 50A and the second resin layer 50B. That is, the second control via conductor 82 is provided so as to penetrate in the z direction the portion between the second element main surface 31B of the second switching element 30B and the interface 57 in the first resin layer 50A.

[0049] Specifically, in the first resin layer 50A, in the portion between the second main element surface 31B of the second switching element 30B and the interface 57, that is, in the portion of the first resin layer 50A that covers the second main element surface 31B of the second switching element 30B, a through hole 58b that penetrates this portion in the z direction is provided. When viewed from the interface 57 side in the z direction, the through hole 58b exposes the second control pad electrode 31BC of the second switching element 30B. In the present embodiment, the second control via conductor 82 is embedded in the through hole 58b. More specifically, the second control via conductor 82 is provided so as to fill the entire inside of the through hole 58b. In the present embodiment, the second control via conductor 82 extends along the z direction. Also, the length of the second control via conductor 82 in the z direction is less than 1 mm. In the present embodiment, the length of the second control via conductor 82 in the z direction is about several hundred μm. As shown in FIGS. 2 and 4, in the present embodiment, the shape of the second control via conductor 82 when viewed from the z direction is circular. Also, in the present embodiment, the diameter of the second control via conductor 82 is 100 μm or more and 200 μm or less. The diameter of the second control via conductor 82 is equal to the diameter of the first control via conductor 81. Note that the diameter of the second control via conductor 82 can be arbitrarily changed.

[0050] The second control via conductor 82 faces the driver pad electrode 43 of the driver 40 in the z direction. In other words, when viewed from the z direction, the second control via conductor 82 is provided at a position overlapping the driver pad electrode 43. Thus, the driver 40 is arranged at a position where the driver pad electrode 43 faces the second control via conductor 82 in the z direction. In other words, the driver 40 is arranged at a position where the driver pad electrode 43 overlaps the second control via conductor 82 when viewed from the z direction. The driver pad electrode 43 facing the second control via conductor 82 corresponds to the second driver pad electrode.

[0051] A connection conductor 88b is provided on the second control via conductor 82. The connection conductor 88b is made of, for example, copper foil. The connection conductor 88b is in contact with the second control via conductor 82. The connection conductor 88b covers the entire second control via conductor 82 in the z direction. On the connection conductor 88b, a driver pad electrode 43 of the driver 40 is mounted via a conductive bonding material. Thereby, the second control via conductor 82 and the driver pad electrode 43 are electrically connected via the connection conductor 88b and the conductive bonding material.

[0052] As shown in FIG. 5, in the present embodiment, the length of the second control via conductor 82 in the z direction is equal to the thickness of the portion of the first resin layer 50A that covers the second element main surface 31B of the second switching element 30B. That is, the length of the second control via conductor 82 in the z direction is shorter than the distance D in the z direction between the driver main surface 41 of the driver 40 and the second resin layer 50B. Also, the length of the second control via conductor 82 in the z direction is equal to the length of the first control via conductor 81 in the z direction.

[0053] As shown in FIGS. 4 and 7, the power supply connection conductor 83 is a conductor that electrically connects the first drive pad electrode 31AA of the first switching element 30A and the power supply wiring 61. The power supply connection conductor 83 includes a plurality of first power supply via conductors 83a connected to the first drive pad electrode 31AA of the first switching element 30A, a plurality of second power supply via conductors 83b connected to the power supply wiring 61, and a power supply connection wiring 83c that connects the plurality of first power supply via conductors 83a and the plurality of second power supply via conductors 83b.

[0054] As shown in FIG. 4, each first power supply via conductor 83a is arranged at a position overlapping the first drive pad electrode 31AA of the first switching element 30A when viewed from the z direction. When viewed from the z direction, the plurality of first power supply via conductors 83a are arranged in a state of being aligned with each other in the x direction and separated from each other in the y direction. In the present embodiment, the shape of the first power supply via conductor 83a when viewed from the z direction is circular. The diameter of the first power supply via conductor 83a is, for example, 100 μm or more and 200 μm or less.

[0055] As shown in FIG. 7, each first power supply via conductor 83a is provided so as to penetrate the first resin layer 50A in the z direction. In other words, each first power supply via conductor 83a is provided so as to penetrate a portion of the first resin layer 50A that covers the first element main surface 31A of the first switching element 30A. More specifically, each first power supply via conductor 83a is provided so as to connect the first drive pad electrode 31AA of the first switching element 30A and the interface 57 between the first resin layer 50A and the second resin layer 50B. That is, the first power supply via conductor 83a is provided so as to penetrate, in the z direction, a portion of the first resin layer 50A between the first element main surface 31A of the first switching element 30A and the interface 57.

[0056] Specifically, in a portion of the first resin layer 50A between the first element main surface 31A of the first switching element 30A and the interface 57, that is, in a portion of the first resin layer 50A that covers the first element main surface 31A of the first switching element 30A, a plurality of through holes 58c that penetrate the portion in the z direction are provided. Each through hole 58c exposes the first drive pad electrode 31AA of the first switching element 30A when viewed from the interface 57 side in the z direction. In the present embodiment, the plurality of first power supply via conductors 83a are individually embedded in the plurality of through holes 58c. More specifically, the first power supply via conductor 83a is provided so as to fill the entire inside of the through hole 58c. In the present embodiment, each first power supply via conductor 83a extends along the z direction. The length of each first power supply via conductor 83a in the z direction is equal to the length of the first control via conductor 81 in the z direction. Each first power supply via conductor 83a is in contact with the first drive pad electrode 31AA of the first switching element 30A.

[0057] As shown in FIG. 4, each second power supply via conductor 83b is arranged at a position overlapping with the power supply wiring 61 when viewed from the z direction. When viewed from the z direction, the plurality of second power supply via conductors 83b are arranged at intervals from each other in the x direction and the y direction. In the present embodiment, the shape of the second power supply via conductor 83b when viewed from the z direction is circular. The diameter of the second power supply via conductor 83b is equal to the diameter of the first power supply via conductor 83a.

[0058] As shown in FIG. 7, each second power supply via conductor 83b is provided so as to penetrate the first resin layer 50A in the z direction. More specifically, each second power supply via conductor 83b is provided so as to connect the resin back surface 52 of the sealing resin 50 and the interface 57 between the first resin layer 50A and the second resin layer 50B. For this reason, the length of each second power supply via conductor 83b in the z direction is equal to the length of the first resin layer 50A in the z direction. The length of each second power supply via conductor 83b in the z direction is longer than the length of each first power supply via conductor 83a in the z direction.

[0059] When viewed from the z direction, a plurality of through holes 58d are provided in a portion of the first resin layer 50A that overlaps with the power supply wiring 61. Each through hole 58d is provided so as to penetrate the first resin layer 50A. For this reason, each through hole 58d exposes the power supply wiring 61 when viewed from the interface 57 side in the z direction. In the present embodiment, the plurality of second power supply via conductors 83b are individually embedded in the plurality of through holes 58d. More specifically, the second power supply via conductor 83b is provided so as to fill all of the inside of the through hole 58d. In the present embodiment, each second power supply via conductor 83b extends along the z direction. Each second power supply via conductor 83b is in contact with the power supply wiring 61.

[0060] The power supply connection wiring 83c is disposed on the first resin layer 50A. As shown in FIG. 4, when viewed from the z direction, the power supply connection wiring 83c extends along the x direction. The power supply connection wiring 83c is in contact with both each first power supply via conductor 83a and each second power supply via conductor 83b. That is, the power supply connection wiring 83c is formed so as to cover all of the plurality of first power supply via conductors 83a from the z direction, and is formed so as to cover all of the plurality of second power supply via conductors 83b from the z direction. For this reason, the length of the power supply connection wiring 83c in the y direction is larger than the total length of the diameters of the plurality of first power supply via conductors 83a and the total length of the diameters of the plurality of second power supply via conductors 83b.

[0061] As shown in FIGS. 4 and 6, the ground connection conductor 84 is a conductor that electrically connects the second drive pad electrode 31BB of the second switching element 30B and the ground wiring 62.

[0062] The ground connection conductor 84 includes a plurality of first ground via conductors 84a connected to the second drive pad electrode 31BB of the second switching element 30B, a plurality of second ground via conductors 84b connected to the ground wiring 62, and a ground connection wiring 84c that connects the plurality of first ground via conductors 84a and the plurality of second ground via conductors 84b.

[0063] As shown in FIG. 4, each first ground via conductor 84a is disposed at a position overlapping the second drive pad electrode 31BB of the second switching element 30B when viewed from the z direction. When viewed from the z direction, the plurality of first ground via conductors 84a are arranged in a state of being aligned with each other in the x direction and separated from each other in the y direction. In the present embodiment, the shape of the first ground via conductor 84a when viewed from the z direction is circular. The diameter of the first ground via conductor 84a is, for example, 100 μm or more and 200 μm or less.

[0064] As shown in FIG. 7, each first ground via conductor 84a is provided so as to penetrate the first resin layer 50A in the z direction. In other words, each first ground via conductor 84a is provided so as to penetrate a portion of the first resin layer 50A that covers the second element main surface 31B of the second switching element 30B. More specifically, each first ground via conductor 84a is provided so as to connect the second drive pad electrode 31BB of the second switching element 30B and the interface 57 between the first resin layer 50A and the second resin layer 50B. That is, the first ground via conductor 84a is provided so as to penetrate in the z direction a portion of the first resin layer 50A between the second element main surface 31B of the second switching element 30B and the interface 57.

[0065] Specifically, in a portion of the first resin layer 50A between the second element main surface 31B of the second switching element 30B and the interface 57, that is, in a portion of the first resin layer 50A that covers the second element main surface 31B of the second switching element 30B, a plurality of through holes 58e are provided that penetrate that portion in the z direction. Each through hole 58e exposes the second drive pad electrode 31BB of the second switching element 30B when viewed from the interface 57 side in the z direction. In the present embodiment, the plurality of first ground via conductors 84a are individually embedded in the plurality of through holes 58e. More specifically, the first ground via conductor 84a is provided so as to fill all of the through hole 58e. In the present embodiment, each first ground via conductor 84a extends along the z direction. The length of each first ground via conductor 84a in the z direction is equal to the length of the second control via conductor 82 in the z direction. Each first ground via conductor 84a is in contact with the second drive pad electrode 31BB of the second switching element 30B.

[0066] As shown in FIG. 4, each second ground via conductor 84b is arranged at a position overlapping the ground wiring 62 when viewed from the z direction. When viewed from the z direction, the plurality of second ground via conductors 84b are arranged at intervals from each other in the x direction and the y direction. In the present embodiment, the shape of the second ground via conductor 84b when viewed from the z direction is circular. The diameter of the second ground via conductor 84b is equal to the diameter of the first ground via conductor 84a.

[0067] As shown in FIG. 7, each second ground via conductor 84b is provided so as to penetrate the first resin layer 50A in the z direction. More specifically, each second ground via conductor 84b is provided so as to connect the resin back surface 52 of the sealing resin 50 and the interface 57 between the first resin layer 50A and the second resin layer 50B. Therefore, the length of each second ground via conductor 84b in the z direction is equal to the length of the first resin layer 50A in the z direction. The length of each second ground via conductor 84b in the z direction is longer than the length of each first ground via conductor 84a in the z direction. The length of each second ground via conductor 84b in the z direction is equal to the length of each second power supply via conductor 83b in the z direction.

[0068] When viewed from the z direction, a plurality of through holes 58f are provided in a portion of the first resin layer 50A that overlaps the ground wiring 62. Each through hole 58f is provided so as to penetrate the first resin layer 50A. Therefore, each through hole 58f exposes the ground wiring 62 when viewed from the interface 57 side in the z direction. In the present embodiment, the plurality of second ground via conductors 84b are individually embedded in the plurality of through holes 58f. More specifically, the second ground via conductor 84b is provided so as to fill the entire inside of the through hole 58f. In the present embodiment, each second ground via conductor 84b extends along the z direction. Each second ground via conductor 84b is in contact with the ground wiring 62.

[0069] The ground connection wiring 84c is disposed on the first resin layer 50A. As shown in FIG. 4, when viewed from the z direction, the ground connection wiring 84c extends along the x direction. The ground connection wiring 84c is in contact with both each first ground via conductor 84a and each second ground via conductor 84b. That is, the ground connection wiring 84c is formed so as to cover all of the plurality of first ground via conductors 84a from the z direction, and is formed so as to cover all of the plurality of second ground via conductors 84b from the z direction. For this reason, the length of the ground connection wiring 84c in the y direction is larger than the total length of the diameters of the plurality of first ground via conductors 84a and the total length of the diameters of the plurality of second ground via conductors 84b. In the present embodiment, the length of the ground connection wiring 84c in the y direction is equal to the length of the power supply connection wiring 83c in the y direction.

[0070] As shown in FIGS. 4, 6, and 7, the output connection conductor 85 is a conductor that electrically connects the second drive pad electrode 31AB of the first switching element 30A and the first drive pad electrode 31BA of the second switching element 30B to the output wiring 63.

[0071] The output connection conductor 85 includes an element connection conductor 87 that connects both the second drive pad electrode 31AB of the first switching element 30A and the first drive pad electrode 31BA of the second switching element 30B, and a plurality of output via conductors 85a that connect the element connection conductor 87 and the output wiring 63.

[0072] The element connection conductor 87 is provided so as to straddle the output wiring 63 in the x direction when viewed from the z direction. The element connection conductor 87 includes a plurality of first drive via conductors 87a connected to the second drive pad electrode 31AB of the first switching element 30A, a plurality of second drive via conductors 87b connected to the first drive pad electrode 31BA of the second switching element 30B, and a drive connection wiring 87c that connects the plurality of first drive via conductors 87a and the plurality of second drive via conductors 87b.

[0073] As shown in FIG. 4, each first driving via conductor 87a is arranged at a position overlapping with the second driving pad electrode 31AB of the first switching element 30A when viewed from the z direction. When viewed from the z direction, the plurality of first driving via conductors 87a are arranged in a state of being aligned with each other in the x direction and separated from each other in the y direction. In the present embodiment, the shape of the first driving via conductor 87a when viewed from the z direction is circular. The diameter of the first driving via conductor 87a is, for example, 100 μm or more and 200 μm or less.

[0074] As shown in FIG. 6, each first driving via conductor 87a is provided so as to penetrate the first resin layer 50A in the z direction. In other words, each first driving via conductor 87a is provided so as to penetrate in the z direction the portion of the first resin layer 50A that covers the first element main surface 31A of the first switching element 30A. More specifically, each first driving via conductor 87a is provided so as to connect the second driving pad electrode 31AB of the first switching element 30A and the interface 57 between the first resin layer 50A and the second resin layer 50B. That is, the first driving via conductor 87a is provided so as to penetrate in the z direction the portion between the first element main surface 31A of the first switching element 30A and the interface 57 in the first resin layer 50A.

[0075] Specifically, when viewed from the z - direction, in the first resin layer 50A, the portion overlapping with the second drive pad electrode 31AB of the first switching element 30A, that is, the portion of the first resin layer 50A covering the first element main surface 31A of the first switching element 30A, a plurality of through - holes 58g penetrating in the z - direction are provided. The plurality of through - holes 58g penetrate in the z - direction the portion between the first element main surface 31A of the first switching element 30A and the interface 57 in the first resin layer 50A. When viewed from the interface 57 side in the z - direction, each through - hole 58g exposes the second drive pad electrode 31AB of the first switching element 30A. In the present embodiment, the plurality of first drive via conductors 87a are individually embedded in the plurality of through - holes 58g. More specifically, the first drive via conductor 87a is provided so as to fill the entire inside of the through - hole 58g. In the present embodiment, each first drive via conductor 87a extends along the z - direction. The length of each first drive via conductor 87a in the z - direction is equal to the length of the first control via conductor 81 in the z - direction. Each first drive via conductor 87a is in contact with the second drive pad electrode 31AB of the first switching element 30A.

[0076] As shown in FIG. 4, each second drive via conductor 87b is arranged at a position overlapping with the first drive pad electrode 31BA of the second switching element 30B when viewed from the z - direction. When viewed from the z - direction, the plurality of second drive via conductors 87b are arranged in a state of being aligned with each other in the x - direction and separated from each other in the y - direction. In the present embodiment, the shape of the second drive via conductor 87b when viewed from the z - direction is circular. The diameter of the second drive via conductor 87b is equal to the diameter of the first drive via conductor 87a.

[0077] As shown in FIG. 7, each second driving via conductor 87b is provided so as to penetrate the first resin layer 50A in the z direction. In other words, each second driving via conductor 87b is provided so as to penetrate, in the z direction, the portion of the first resin layer 50A that covers the second element main surface 31B of the second switching element 30B. More specifically, each second driving via conductor 87b is provided so as to connect the first driving pad electrode 31BA of the second switching element 30B and the interface 57 between the first resin layer 50A and the second resin layer 50B. That is, the second driving via conductor 87b is provided so as to penetrate, in the z direction, the portion between the second element main surface 31B of the second switching element 30B and the interface 57 in the first resin layer 50A.

[0078] Specifically, when viewed from the z direction, in the portion of the first resin layer 50A that overlaps the first driving pad electrode 31BA of the second switching element 30B, that is, in the portion of the first resin layer 50A that covers the second element main surface 31B of the second switching element 30B, a plurality of through holes 58h that penetrate that portion in the z direction are provided. The plurality of through holes 58h penetrate, in the z direction, the portion between the second element main surface 31B of the second switching element 30B and the interface 57 in the first resin layer 50A. Each through hole 58h exposes the first driving pad electrode 31BA of the second switching element 30B when viewed from the interface 57 side in the z direction. In the present embodiment, the plurality of second driving via conductors 87b are individually embedded in the plurality of through holes 58h. More specifically, the second driving via conductor 87b is provided so as to fill the entirety of the through hole 58h. In the present embodiment, each second driving via conductor 87b extends along the z direction. The length of each second driving via conductor 87b in the z direction is equal to the length of the second control via conductor 82 in the z direction. Each second driving via conductor 87b is in contact with the first driving pad electrode 31BA of the second switching element 30B.

[0079] The drive connection wiring 87c is disposed on the first resin layer 50A. As shown in FIG. 4, when viewed from the z direction, the drive connection wiring 87c extends along the x direction. The drive connection wiring 87c is in contact with both each first drive via conductor 87a and each second drive via conductor 87b. That is, the drive connection wiring 87c is formed so as to cover all of the plurality of first drive via conductors 87a from the z direction, and is formed so as to cover all of the plurality of second drive via conductors 87b from the z direction. For this reason, the length of the drive connection wiring 87c in the y direction is greater than the total length of the diameters of the plurality of first drive via conductors 87a and the total length of the diameters of the plurality of second drive via conductors 87b. In the present embodiment, the length of the drive connection wiring 87c in the y direction is equal to the length of the power supply connection wiring 83c in the y direction and the length of the ground connection wiring 84c in the y direction. The drive connection wiring 87c has, when viewed from the z direction, a portion overlapping with the second drive pad electrode 31AB of the first switching element 30A, a portion overlapping with the first drive pad electrode 31BA of the second switching element 30B, and a portion overlapping with the output wiring 63.

[0080] Each output via conductor 85a is a conductor that connects a portion of the drive connection wiring 87c that overlaps with the output wiring 63 when viewed from the z direction and the output wiring 63. As shown in FIG. 4, each output via conductor 85a is disposed at a position overlapping both the drive connection wiring 87c and the output wiring 63 when viewed from the z direction. The plurality of output via conductors 85a are arranged spaced apart from each other in the x direction and the y direction when viewed from the z direction. In the present embodiment, the shape of the output via conductor 85a when viewed from the z direction is circular. The diameter of the output via conductor 85a is, for example, 100 μm or more and 200 μm or less.

[0081] As shown in FIGS. 6 and 7, each output via conductor 85a is provided so as to penetrate the first resin layer 50A in the z direction. More specifically, each output via conductor 85a is provided so as to connect the resin back surface 52 of the sealing resin 50 and the interface 57 between the first resin layer 50A and the second resin layer 50B. For this reason, the length of each output via conductor 85a in the z direction is equal to the length of the first resin layer 50A in the z direction. The length of each output via conductor 85a in the z direction is longer than each of the lengths of each first driving via conductor 87a and each second driving via conductor 87b in the z direction. The length of each output via conductor 85a in the z direction is equal to each of the lengths of each second ground via conductor 84b and each second power supply via conductor 83b in the z direction. The output via conductor 85a is in contact with both the driving connection wiring 87c and the output wiring 63.

[0082] Specifically, when viewed from the z direction, a plurality of through holes 58i penetrating the first resin layer 50A in the z direction are provided in a portion of the first resin layer 50A that overlaps both the driving connection wiring 87c and the output wiring 63. The plurality of through holes 58i expose the output wiring 63 when viewed from the interface 57 side in the z direction, and expose the driving connection wiring 87c when viewed from the substrate 20 side in the z direction. In the present embodiment, the plurality of output via conductors 85a are individually embedded in the plurality of through holes 58i. More specifically, the output via conductor 85a is provided so as to fill all of the through hole 58i. In the present embodiment, each output via conductor 85a extends along the z direction.

[0083] As shown in FIG. 4, the plurality of control connection conductors 86 are conductors that individually connect the plurality of driver pad electrodes 43 formed on the driver back surface 42 of the driver 40 and the plurality of control wirings 64.

[0084] Each control connection conductor 86 has a control connection wiring 86a and a connection via conductor 86b. As shown in FIG. 8, the control connection wiring 86a is a wiring electrically connected to the driver pad electrode 43 of the driver 40 and is disposed on the first resin layer 50A. As shown in FIG. 4, the control connection wiring 86a has, when viewed from the z direction, a portion overlapping with the driver pad electrode 43 of the driver 40, a portion overlapping with the control wiring 64, and a portion connecting these portions. Each control connection wiring 86a is connected to the driver pad electrode 43 via a conductive bonding material.

[0085] As shown in FIG. 4, the connection via conductor 86b is disposed at a position overlapping both the control connection wiring 86a and the control wiring 64 when viewed from the z direction. In the present embodiment, the shape of the connection via conductor 86b when viewed from the z direction is circular. The diameter of the connection via conductor 86b is 100 μm or more and 200 μm or less.

[0086] As shown in FIG. 8, the connection via conductor 86b is provided so as to penetrate the first resin layer 50A in the z direction. More specifically, the connection via conductor 86b is provided so as to connect the resin back surface 52 of the sealing resin 50 and the interface 57 between the first resin layer 50A and the second resin layer 50B. Therefore, the length of the connection via conductor 86b in the z direction is equal to the length of the first resin layer 50A in the z direction. The length of the connection via conductor 86b in the z direction is equal to the length of each second ground via conductor 84b and the length of each second power supply via conductor 83b in the z direction, respectively. The connection via conductor 86b is in contact with both the control connection wiring 86a and the control wiring 64.

[0087] Specifically, when viewed from the z direction, a plurality of through holes 58j penetrating the first resin layer 50A in the z direction are provided in a portion of the first resin layer 50A that overlaps both the control connection wiring 86a and the control wiring 64. When viewed from the interface 57 side in the z direction, the plurality of through holes 58j expose the control wiring 64, and when viewed from the substrate 20 side in the z direction, the control connection wiring 86a is exposed. In the present embodiment, the plurality of connection via conductors 86b are individually embedded in the plurality of through holes 58j. More specifically, the connection via conductors 86b are provided so as to fill the entire inside of the through holes 58j. In the present embodiment, each connection via conductor 86b extends along the z direction.

[0088] Next, with reference to FIG. 9, an example of the circuit configuration of the semiconductor device 10 will be described. A plus terminal of a drive power source DV, which is a DC power source, is electrically connected to the first drive pad electrode 31AA (drain electrode) of the first switching element 30A. The second drive pad electrode 31AB (source electrode) of the first switching element 30A is electrically connected to the first drive pad electrode 31BA (drain electrode) of the second switching element 30B. The second drive pad electrode 31BB (source electrode) of the second switching element 30B is connected to the ground. In this way, the first switching element 30A and the second switching element 30B are connected in series.

[0089] A capacitor C1 is connected to the series combination of the first switching element 30A and the second switching element 30B. The capacitor C1 has a function of removing noise of the voltage supplied from the drive power source DV to the first drive pad electrode 31AA of the first switching element 30A.

[0090] A node N between the second drive pad electrode 31AB of the first switching element 30A and the first drive pad electrode 31BA of the second switching element 30B is electrically connected to a load L to which the semiconductor device 10 supplies power. The load L is provided outside the semiconductor device 10. An example of the load L is a motor.

[0091] Driver 40 is electrically connected to the first control pad electrode 31AC (gate electrode) of the first switching element 30A and the second control pad electrode 31BC (gate electrode) of the second switching element 30B. Based on signals from a signal generation circuit (not shown) provided outside the semiconductor device 10, driver 40 generates gate voltages for controlling the on / off operations of the switching elements 30A and 30B, and supplies them to the control pad electrodes 31AC and 31BC.

[0092] The plurality of driver pad electrodes 43 of driver 40 include a first signal input terminal HIN, a second signal input terminal LIN, a control-side power supply terminal VCC, a control-side ground terminal GND, a bootstrap terminal VB, a first signal output terminal HOH, a second signal output terminal HOL, an output-side power supply terminal VS, a third signal output terminal LOH, a fourth signal output terminal LOL, and an output-side ground terminal PGND. Note that the plurality of driver pad electrodes 43 may include terminals other than the above-described terminals.

[0093] The first signal input terminal HIN is a terminal to which a high-potential-side signal from the signal generation circuit is input. The second signal input terminal LIN is a terminal to which a low-potential-side signal from the signal generation circuit is input. Based on the high-potential-side signal and the low-potential-side signal input from the signal generation circuit via the signal input terminals HIN and LIN, driver 40 generates gate voltages to be output to the control pad electrodes 31AC and 31BC of the switching elements 30A and 30B.

[0094] The control-side power supply terminal VCC is a terminal to which the plus terminal of the control power supply CV, which is a DC power supply provided outside the semiconductor device 10, is electrically connected. The minus terminal of the control power supply CV is connected to the ground. A capacitor C2 is connected in parallel with the control power supply CV between the control-side power supply terminal VCC and the control power supply CV. The capacitor C2 has a function of removing noise from the voltage supplied from the control power supply CV to the control-side power supply terminal VCC. The first terminal of the capacitor C2 is connected to the plus terminal of the control-side power supply terminal VCC, and the second terminal of the capacitor C2 is connected to the ground. The control-side ground terminal GND is connected to the ground. More specifically, the control-side ground terminal GND is electrically connected to the second terminal of the capacitor C2. The driver 40 is driven based on the voltage of the control power supply CV (for example, 5V).

[0095] The output-side power supply terminal VS is a terminal that serves as the power supply for the load L. The output-side power supply terminal VS is connected to the node N between the second drive pad electrode 31AB of the first switching element 30A and the first drive pad electrode 31BA of the second switching element 30B.

[0096] Each of the first signal output terminal HOH and the second signal output terminal HOL is a terminal that supplies the gate voltage generated in the driver 40 to the first control pad electrode 31AC of the first switching element 30A. Each signal output terminal HOH, HOL is electrically connected to the first control pad electrode 31AC. A current limiting resistor R1 is provided between the first signal output terminal HOH and the first control pad electrode 31AC.

[0097] Each of the third signal output terminal LOH and the fourth signal output terminal LOL is a terminal that supplies the gate voltage generated in the driver 40 to the second control pad electrode 31BC of the second switching element 30B. Each signal output terminal LOH, LOL is electrically connected to the second control pad electrode 31BC. A current limiting resistor R2 is provided between the third signal output terminal LOH and the second control pad electrode 31BC.

[0098] The bootstrap terminal VB is a terminal to which a bootstrap capacitor BC that constitutes a bootstrap circuit (not shown) for generating the gate voltage output from the first signal output terminal HOH and the second signal output terminal HOL to a high potential is connected. A bootstrap diode that constitutes the bootstrap circuit is provided in the driver 40. The first terminal of the bootstrap capacitor BC is connected to the bootstrap terminal VB, and the second terminal of the bootstrap capacitor BC is connected to a node N between the second drive pad electrode 31AB of the first switching element 30A and the first drive pad electrode 31BA of the second switching element 30B.

[0099] The output-side ground terminal PGND is electrically connected to the second drive pad electrode 31BB (source electrode) of the second switching element 30B. That is, the output-side ground terminal PGND is connected to the ground.

[0100] According to this configuration, when the high-potential side signal and the low-potential side signal from the signal generation circuit are input to the driver 40, the driver 40 generates a gate voltage based on these signals and supplies it to the respective control pad electrodes 31AC and 31BC of the switching elements 30A and 30B. The switching elements 30A and 30B perform an on / off operation based on the gate voltage.

[0101] (Method for manufacturing a semiconductor device) With reference to FIGS. 10 to 21, an example of a method for manufacturing the semiconductor device 10 will be described. The method for manufacturing the semiconductor device 10 mainly includes a wiring layer formation step, a switching element mounting step, a first resin layer formation step, a connection conductor formation step, a driver mounting step, a second resin layer formation step, an external terminal formation step, and a cutting step.

[0102] The wiring layer formation step includes a conductor portion formation step shown in FIG. 10, a base material formation step shown in FIG. 11, and a grinding step shown in FIG. 12. As shown in FIG. 10, in the conductor part forming step, first, a support substrate 800 made of, for example, Si is prepared. The support substrate 800 has a substrate main surface 801 facing one side in the z direction. Next, a conductor part 860 is formed on the substrate main surface 801. More specifically, first, an insulating film (not shown) is formed on the substrate main surface 801. This insulating film is formed by thermally oxidizing an oxide film on the entire surface of the substrate main surface 801 and then forming a nitride film on this oxide film by plasma CVD (Chemical Vapor Deposition). Next, a seed layer is formed on the insulating film. The seed layer is formed by sputtering a barrier layer over the entire insulating film and then forming a seed layer on this barrier layer by sputtering. The seed layer is made of, for example, Ti. Next, a plating layer is formed on the seed layer. The plating layer is formed by electrolytic plating using the seed layer as a conductive path after performing lithographic patterning on the seed layer. The plating layer is made of Cu. The plating layer is formed at a position corresponding to the conductor part 60 of the semiconductor device 10 in the seed layer. Next, the portions of the barrier layer and the seed layer that are not covered by the plating layer are removed. Thus, the conductor part 860 is composed of a laminate of the seed layer and the plating layer. Note that the conductor part 860 may be formed of a columnar material of Cu. The length of the conductor part 860 in the z direction in the conductor part forming step is longer than the length of the conductor part 60 in the z direction.

[0103] In FIG. 10, conductor parts 860 corresponding to the power supply wiring 61, the ground wiring 62, and the output wiring 63 (all shown in FIG. 5) among the conductor parts 60 are shown. Although not shown, in the conductor part forming step, conductor parts 860 corresponding to a plurality of control wirings 64 (see FIG. 8) among the conductor parts 60 are also formed.

[0104] As shown in FIG. 11, in the base material forming step, a base material 820 is formed on the main surface 801 of the substrate. The base material 820 is a member that constitutes the substrate 20 of the semiconductor device 10 and is made of, for example, an epoxy resin. The base material 820 is formed so as to seal the conductor portion 860. That is, the end face of the conductor portion 860 on the side opposite to the support substrate 800 in the z direction is covered by the base material 820. The base material 820 is formed by, for example, transfer molding or compression molding. Although not shown in FIG. 11, the conductor portions 860 corresponding to the plurality of control wirings 64 in the conductor portion 60 are also sealed by the base material 820.

[0105] As shown in FIG. 12, in the grinding step, the base material 820 and the conductor portion 860 are removed in the z direction. More specifically, the portion of the base material 820 on the side opposite to the support substrate 800 in the z direction is removed by mechanical grinding. At this time, the portion of the conductor portion 860 on the side opposite to the support substrate 800 in the z direction is also removed together. As a result, the lengths of the base material 820 and the conductor portion 860 in the z direction are shortened, and the conductor portion 860 is exposed from the base material 820 in the z direction. Thereby, the length of the base material 820 in the z direction becomes equal to the length of the substrate 20 in the z direction, and the length of the conductor portion 860 in the z direction becomes equal to the length of the conductor portion 60 in the z direction. Through the above steps, the conductor portion 60 is formed.

[0106] As shown in FIG. 13, in the switching element mounting step, the first switching element 30A and the second switching element 30B are each mounted on the base material 820. More specifically, a bonding material made of an adhesive is applied to the positions on the base material 820 where the respective switching elements 30A and 30B are mounted. Next, each of the switching elements 30A and 30B is mounted on the bonding material. Subsequently, the bonding material is cured so that the bonding material and each of the switching elements 30A and 30B are bonded. That is, each of the switching elements 30A and 30B is bonded to the base material 820 by the bonding material.

[0107] The first resin layer forming step includes the resin layer forming step shown in FIG. 14 and the grinding step shown in FIG. 15. As shown in FIG. 14, in the resin layer forming step, a first resin layer 850A that seals each of the switching elements 30A and 30B is formed. The first resin layer 850A is a layer that constitutes the first resin layer 50A of the semiconductor device 10 and is made of, for example, a black epoxy resin. The length of the first resin layer 850A in the z direction is longer than the length of the first resin layer 50A in the z direction. The first resin layer 850A is formed, for example, by transfer molding or compression molding.

[0108] As shown in FIG. 15, in the grinding step, the first resin layer 850A is removed in the z direction. More specifically, by mechanical grinding, the portion of the first resin layer 850A on the side opposite to the base material 820 in the z direction is removed. The distance between the element main surfaces 31A and 31B of each of the switching elements 30A and 30B and the first resin layer 850A in the z direction is reduced. The first resin layer 850A is removed until this distance becomes, for example, about several hundred μm. Thereby, the length of the first resin layer 850A in the z direction becomes equal to the length of the first resin layer 50A in the z direction. In this way, the thickness of the portion of the first resin layer 850A that covers the element main surfaces 31A and 31B of each of the switching elements 30A and 30B is made thinner.

[0109] The connection conductor forming step includes a through hole forming step shown in FIG. 16, a via conductor forming step shown in FIG. 17, and a wiring forming step shown in FIG. 18. As shown in FIG. 16, in the through hole forming step, through holes 58a to 58j are formed in the first resin layer 850A by drilling such as laser processing. In FIG. 16, a through hole 58a that exposes the first control pad electrode 31AC of the first switching element 30A in the z direction and a through hole 58b that exposes the second control pad electrode 31BC of the second switching element 30B in the z direction are formed in the first resin layer 850A. The through holes 58a and 58b penetrate in the z direction through the portion of the first resin layer 850A that covers the element main surfaces 31A and 31B of each of the switching elements 30A and 30B.

[0110] Although not shown in the drawings, through holes 58c to 58j are also formed in the first resin layer 850A. Each of the through holes 58c, 58e, 58g, and 58h penetrates in the z direction through a portion of the first resin layer 850A that covers the main surfaces 31A and 31B of the respective switching elements 30A and 30B, similar to the through holes 58a and 58b. The through holes 58d, 58f, 58i, and 58j are formed to penetrate the first resin layer 850A in the z direction. That is, each of the through holes 58d, 58f, 58i, and 58j penetrates in the z direction through a portion of the first resin layer 850A other than the portion that covers the main surfaces 31A and 31B of the respective switching elements 30A and 30B.

[0111] As shown in FIG. 17, in the via conductor forming step, via conductors are embedded in each of the through holes 58a to 58j. More specifically, as shown in FIG. 17, the first control via conductor 81 is formed to be embedded in the through hole 58a, and the second control via conductor 82 is formed to be embedded in the through hole 58b.

[0112] Although not shown in the drawings, each of the power supply via conductors 83a and 83b, each of the ground via conductors 84a and 84b, the output via conductor 85a, the connection via conductor 86b, and each of the drive via conductors 87a and 87b, which are via conductors embedded in the through holes 58c to 58j, are also formed in the same manner as the control via conductors 81 and 82.

[0113] As shown in FIG. 18, in the wiring forming step, connection conductors 88a and 88b are formed by the same method as in the conductor portion forming step and the via conductor forming step. That is, the connection conductors 88a and 88b are composed of a laminate of Ti and Cu. The connection conductors 88a and 88b are formed on the first resin layer 850A.

[0114] Although not shown in the drawings, the power supply connection wiring 83c, the ground connection wiring 84c, the control connection wiring 86a, and the drive connection wiring 87c are also formed on the first resin layer 850A, similarly to the connection conductors 88a and 88b. Thus, since each of the connection conductors 88a and 88b, the power supply connection wiring 83c, the ground connection wiring 84c, the control connection wiring 86a, and the drive connection wiring 87c is formed on the first resin layer 850A, these conductors and wirings are formed simultaneously in the wiring formation process.

[0115] As shown in FIG. 19, in the driver mounting process, the driver 40 is mounted on the first resin layer 850A. More specifically, a conductive bonding material such as solder or Ag paste is applied to the positions on each of the control connection wirings 86a where the driver 40 is to be mounted and to each of the connection conductors 88a and 88b. Next, the driver 40 is mounted on the conductive bonding material, for example, by flip chip bonding. Subsequently, the conductive bonding material is liquefied by a reflow process. Subsequently, the conductive bonding material is solidified by cooling, whereby the conductive bonding material is joined to the driver 40. That is, the driver 40 is joined to each of the control connection wirings 86a and each of the connection conductors 88a and 88b by the conductive bonding material.

[0116] As shown in FIG. 20, in the second resin layer forming step, a second resin layer 850B is formed on the first resin layer 850A. The second resin layer 850B is a layer that constitutes the second resin layer 50B of the semiconductor device 10 and is made of, for example, a black epoxy resin. In the present embodiment, the second resin layer 850B is made of the same material as the first resin layer 850A. When viewed from the z direction, the second resin layer 850B is formed over the entire first resin layer 850A. The second resin layer 850B is formed so as to encapsulate the driver 40. The second resin layer 850B is formed by, for example, transfer molding or compression molding. As a result, an interface 857 is formed between the first resin layer 850A and the second resin layer 850B in the z direction. The length of the second resin layer 850B in the z direction is longer than the length of the first resin layer 850A in the z direction. In other words, the thickness of the second resin layer 850B is thicker than the thickness of the first resin layer 850A. Also, as shown in FIG. 20, the thickness of the portion of the second resin layer 850B that covers the driver main surface 41 of the driver 40 is thicker than the thickness of the portion of the first resin layer 850A that covers the respective element main surfaces 31A and 31B of the respective switching elements 30A and 30B. In other words, the thickness of the portion of the first resin layer 850A that covers the respective element main surfaces 31A and 31B of the respective switching elements 30A and 30B is thinner than the thickness of the portion of the second resin layer 850B that covers the driver main surface 41 of the driver 40.

[0117] As shown in FIG. 21, in the external terminal forming step, first, the support substrate 800 is separated from the base material 820. For example, the support substrate 800 is separated from the base material 820 by mechanical grinding or debonding. As a result, the conductor portion 60 is exposed from the surface of the base material 820 on the side opposite to the first resin layer 850A. Subsequently, a plating layer is formed on the conductor portion 60 exposed from the surface of the base material 820 on the side opposite to the first resin layer 850A. The plating layer is formed by, for example, electroless plating, for example, by depositing Ni, Pd, and Au in this order. As a result, the external terminals 70 are formed. In FIG. 21, as the external terminals 70, a power supply terminal 71, a ground terminal 72, and an output terminal 73 are formed. Although not shown, a plurality of control terminals 74 are also formed in the same manner as these terminals 71 to 73.

[0118] As shown in FIG. 21, in the cutting process, a dicing tape TP is attached onto the second resin layer 850B, and is cut along a cutting line CL shown by a one-dot chain line in FIG. 21 in the order of the second resin layer 850B, the first resin layer 850A, and the base material 820, for example, by a dicing blade. Thereby, the first resin layer 50A is formed from the first resin layer 850A, and the second resin layer 50B is formed from the second resin layer 850B. That is, the sealing resin 50 is formed. Further, the substrate 20 is formed from the base material 820. Through the above processes, the semiconductor device 10 is manufactured.

[0119] (Operation) With reference to FIGS. 5 and 22, the operation of the semiconductor device 10 of the present embodiment will be described. FIG. 22 is a cross-sectional view showing a schematic cross-sectional structure of a semiconductor device 10X of a comparative example.

[0120] As shown in FIG. 22, the semiconductor device 10X includes a substrate 20X, a switching element 30X and a driver 40X mounted on the substrate 20X, and a sealing resin 50X that seals both the switching element 30X and the driver 40X. As shown in FIG. 22, the switching element 30X and the driver 40X are arranged on the same plane.

[0121] The switching element 30X and the driver 40X are arranged to be spaced apart from each other in the y direction in a state of being aligned with each other in the z direction. The switching element 30X has an element main surface 31X and an element back surface 32X that face opposite sides in the z direction, and is arranged on the substrate 20X such that the element back surface 32X faces the substrate 20X side. A control pad electrode 31XC that is electrically connected to the driver 40X is formed on the element main surface 31X. The driver 40X has a driver main surface 41X and a driver back surface 42X that face opposite sides in the z direction, and is arranged on the substrate 20X such that the driver back surface 42X faces the substrate 20X side. A driver pad electrode 43X that is electrically connected to the control pad electrode 31XC is formed on the driver main surface 41X.

[0122] The driver pad electrode 43X and the control pad electrode 31XC are connected by a wire W. The wire W is, for example, a bonding wire formed by a wire bonding apparatus. First, the wire bonding apparatus joins a wire base material to the control pad electrode 31XC. Then, the wire bonding apparatus separates the wire base material from the control pad electrode 31XC in the z direction and moves it toward the driver pad electrode 43X. Then, after joining the wire base material to the driver pad electrode 43X, the wire bonding apparatus cuts the wire base material. Thereby, the wire W is formed. For this reason, as shown in FIG. 22, the wire W is curved convexly toward the resin main surface 51X of the sealing resin 50X. As a result, the maximum value DW of the distance in the z direction between the element main surface 31X and the wire W and the maximum value DW of the distance in the z direction between the driver main surface 41X and the wire W are each 1 mm or more. Here, in FIG. 22, since the element main surface 31X and the driver main surface 41X are aligned in the z direction, the maximum value DW of the distance in the z direction between the element main surface 31X and the wire W and the maximum value DW of the distance in the z direction between the driver main surface 41X and the wire W are equal to each other. Also, since the wire W is formed as described above, in the y direction, the switching element 30X and the driver 40X need to be spaced apart by an interval such that the curved convex wire W is formed. Due to such constraints, the length of the wire W is several millimeters (for example, 3 mm or more and 5 mm or less).

[0123] The parasitic inductance of the wire W becomes a factor of the surge included in the gate voltage supplied to the control pad electrode 31XC of the switching element 30X, and increases as the length of the wire W increases. That is, as the length of the wire W increases, there is a risk that the surge included in the gate voltage increases.

[0124] Also, since the surge is proportional to the rate of change of the gate voltage, it increases as the operation of the switching element 30X becomes faster. Therefore, if the switching element 30X is a switching element that does not operate at high frequencies, such as an IGBT (Insulated Gate Bipolar Transistor) or a bipolar transistor, the surge included in the gate voltage does not become excessively large. Accordingly, the influence on the operation of the switching element 30X due to the surge included in the gate voltage is reduced. On the other hand, if the switching element 30X is a switching element that operates at high frequencies, such as a GaN HEMT or a SiC MOSFET, the surge included in the gate voltage may become excessively large. Accordingly, the influence on the operation of the switching element 30X due to the surge included in the gate voltage increases. In one example, in the case of a switching element that operates at high frequencies, such as a GaN HEMT, an inductance of several nH due to the wire W greatly affects the operation of the switching element 30X.

[0125] Due to such circumstances, from the viewpoint of reducing the surge included in the gate voltage, it is necessary to reduce the inductance caused by the conductive path between the control pad electrode 31XC and the driver pad electrode 43X.

[0126] In this regard, in the present embodiment, as shown in FIG. 5, the first control pad electrode 31AC of the first switching element 30A and the driver pad electrode 43 of the driver 40 are connected by the first control via conductor 81, and the second control pad electrode 31BC of the second switching element 30B and the driver pad electrode 43 of the driver 40 are connected by the second control via conductor 82. The heights of these control via conductors 81 and 82 (the lengths of the respective control via conductors 81 and 82 in the z direction) are, for example, on the order of several hundred μm. As a result, the length of the conduction path between the first control pad electrode 31AC and the driver pad electrode 43 and the length of the conduction path between the second control pad electrode 31BC and the driver pad electrode 43 are each shorter than the length of the wire W, so that the inductance due to the lengths of these conduction paths is reduced. In addition, the cross-sectional area of each control via conductor 81, 82 cut in a plane (xy plane) orthogonal to the z direction is larger than the cross-sectional area of the wire W cut in a plane orthogonal to its length direction. For this reason, each control via conductor 81, 82 has a smaller inductance than the wire W. As a result, the surge included in the gate voltage supplied to the first control pad electrode 31AC is reduced, and the surge included in the gate voltage supplied to the second control pad electrode 31BC is reduced.

[0127] When each switching element 30A, 30B and the driver 40 are connected by the respective control via conductors 81, 82 of the present embodiment, the inductance between each control pad electrode 31AC, 31BC and the driver pad electrode 43 becomes less than 1 nH. For this reason, even if a switching element that operates at a high frequency such as a GaN HEMT is used for each of the switching elements 30A and 30B, it is possible to suppress a large influence on the operation of each of the switching elements 30A and 30B due to the inductance between each control pad electrode 31AC, 31BC and the driver pad electrode 43.

[0128] (Effect) According to the semiconductor device 10 of the present embodiment, the following effects can be obtained. (1) The semiconductor device 10 includes a first switching element 30A and a second switching element 30B, which are arranged offset in the z direction with respect to each switching element 30A, 30B, a driver 40 for driving each switching element 30A, 30B, a first resin layer 50A that seals at least each switching element 30A, 30B, and a first control via conductor 81 and a second control via conductor 82 that penetrate the first resin layer 50A in the z direction and electrically connect each switching element 30A, 30B and the driver 40.

[0129] According to this configuration, each switching element 30A, 30B and the driver 40 are arranged offset in the z direction, which is the height direction of the semiconductor device 10, and each control via conductor 81, 82 penetrates the first resin layer 50A in the z direction, whereby each switching element 30A, 30B and the driver 40 are electrically connected. As a result, compared with a configuration in which the switching element 30X and the driver 40X in the comparative example of the semiconductor device 10X shown in FIG. 22 are arranged on the same plane and both are connected by a wire W, the conductive path between each switching element 30A, 30B and the driver 40 is likely to be shortened. More specifically, the length of each control via conductor 81, 82 in the z direction can be shorter than the maximum value DW of the distance in the z direction between the element main surface 31X and the wire W and the maximum value DW of the distance in the z direction between the driver main surface 41X and the wire W, respectively, so that the conductive path between each switching element 30A, 30B and the driver 40 can be shortened. Therefore, the inductance caused by the length of the conductive path can be reduced.

[0130] (2) The driver main surface 41 of the driver 40 and the element main surfaces 31A, 31B of each switching element 30A, 30B face the same side, and the driver back surface 42 of the driver 40 is arranged closer to the device main surface 11 than each element main surface 31A, 31B in the z direction. A plurality of driver pad electrodes 43 are provided on the driver back surface 42 of the driver 40. A first control pad electrode 31AC is provided on the first element main surface 31A, and a second control pad electrode 31BC is provided on the second element main surface 31B.

[0131] According to this configuration, since the switching elements 30A and 30B and the driver 40 can be brought closer in the direction orthogonal to the z direction, both the conduction path between the first control pad electrode 31AC and the driver pad electrode 43 and the conduction path between the second control pad electrode 31BC and another driver pad electrode 43 can be shortened. Therefore, the inductance caused by the lengths of these conduction paths can be reduced.

[0132] (3) When viewed from the z direction, the driver 40 is disposed at a position overlapping the switching elements 30A and 30B. According to this configuration, both the conduction path between the driver pad electrode 43 of the driver 40 and the first control pad electrode 31AC of the first switching element 30A and the conduction path between another driver pad electrode 43 of the driver 40 and the second control pad electrode 31BC of the second switching element 30B can be shortened. Therefore, the inductance caused by the lengths of these conduction paths can be reduced.

[0133] (4) When viewed from the z direction, the first control pad electrode 31AC of the first switching element 30A and the driver pad electrode 43 of the driver 40 face each other, and the first control pad electrode 31AC and the driver pad electrode 43 are connected by a first control via conductor 81.

[0134] According to this configuration, the conduction path between the first control pad electrode 31AC and the driver pad electrode 43 can be further shortened, and the inductance caused by the length of this conduction path can be further reduced.

[0135] When viewed from the z direction, the second control pad electrode 31BC of the second switching element 30B and another driver pad electrode 43 of the driver 40 face each other, and the second control pad electrode 31BC and another driver pad electrode 43 are connected by a second control via conductor 82.

[0136] According to this configuration, the conductive path between the second control pad electrode 31BC and another driver pad electrode 43 can be further shortened, and the inductance caused by the length of this conductive path can be further reduced.

[0137] (5) The encapsulating resin 50 has a first resin layer 50A that encapsulates each switching element 30A, 30B, and a second resin layer 50B that is laminated on the first resin layer 50A and encapsulates the driver 40. According to this configuration, even if the driver 40 is displaced in the z direction with respect to each switching element 30A, 30B, both the switching elements 30A, 30B and the driver 40 can be protected by the encapsulating resin 50.

[0138] Further, the second resin layer 50B encapsulates the power connection wiring 83c of the power connection conductor 83, the ground connection wiring 84c of the ground connection conductor 84, the control connection wiring 86a of the control connection conductor 86, and the drive connection wiring 87c of the element - to - element connection conductor 87, respectively. Therefore, these wirings 83c, 84c, 86a, 87c can be protected by the second resin layer 50B.

[0139] (6) The first control via conductor 81 is provided so as to connect the interface 57 between the first resin layer 50A and the second resin layer 50B and the first control pad electrode 31AC of the first switching element 30A. The second control via conductor 82 is provided so as to connect the interface 57 between the first resin layer 50A and the second resin layer 50B and the second control pad electrode 31BC of the second switching element 30B. According to this configuration, in the manufacturing method of the semiconductor device 10, by reducing the thickness of the first resin layer 850A corresponding to the first resin layer 50A, the thickness of the portion of the first resin layer 850A that covers the main surfaces 31A, 31B of each switching element 30A, 30B is reduced. And since each control via conductor 81, 82 is provided so as to penetrate that portion, the z - direction length of each control via conductor 81, 82 can be shortened.

[0140] (7) The length of each control via conductor 81, 82 in the z-direction is shorter than the distance D between the driver 40 and the second resin layer 50B in the z-direction. That is, the thickness of the portion covering each switching element 30A, 30B in the first resin layer 50A is thinner than the thickness of the portion covering the driver 40 in the second resin layer 50B, and each control via conductor 81, 82 penetrates the portion covering each switching element 30A, 30B in the first resin layer 50A in the z-direction. According to this configuration, since the length of each control via conductor 81, 82 in the z-direction can be shortened, both the conductive path between the driver pad electrode 43 of the driver 40 and the first control pad electrode 31AC of the first switching element 30A and the conductive path between another driver pad electrode 43 of the driver 40 and the second control pad electrode 31BC of the second switching element 30B can be shortened. Therefore, the inductance caused by the length of these conductive paths can be reduced.

[0141] (8) The first drive pad electrode 31AA of the first switching element 30A and the power supply wiring 61 are connected by a power supply connection conductor 83. The power supply connection conductor 83 includes a first power supply via conductor 83a connected to the first drive pad electrode 31AA, a second power supply via conductor 83b connected to the power supply wiring 61, and a power supply connection wiring 83c connecting the first power supply via conductor 83a and the second power supply via conductor 83b. According to this configuration, compared with the configuration of connecting the first drive pad electrode 31AA of the first switching element 30A and the power supply wiring 61 by a wire, the conductive path between the first drive pad electrode 31AA of the first switching element 30A and the power supply wiring 61 can be shortened. Therefore, the inductance caused by the length of this conductive path can be reduced.

[0142] Viewed from the z - direction, the first power - supply via conductor 83a is provided at a position overlapping with the first drive - pad electrode 31AA of the first switching element 30A, and the power - supply connection wiring 83c is provided on the first resin layer 50A. Viewed from the z - direction, the first power - supply via conductor 83a and the power - supply connection wiring 83c are provided so as to overlap and are in contact with each other in the z - direction. Thus, the first power - supply via conductor 83a is provided in a portion of the first resin layer 50A that covers the first main surface 31A of the first switching element 30A, that is, in a portion close to the interface 57 between the first resin layer 50A and the second resin layer 50B and having a small thickness in the first resin layer 50A, and is directly connected to the power - supply connection wiring 83c. Therefore, the conductive path (the z - direction length of the first power - supply via conductor 83a) between the first drive - pad electrode 31AA of the first switching element 30A and the power - supply connection wiring 83c in the z - direction can be shortened. Thereby, the inductance caused by the length of this conductive path can be reduced.

[0143] (9) The second drive - pad electrode 31BB of the second switching element 30B and the ground wiring 62 are connected by a ground connection conductor 84. The ground connection conductor 84 includes a first ground - via conductor 84a connected to the second drive - pad electrode 31BB, a second ground - via conductor 84b connected to the ground wiring 62, and a ground connection wiring 84c connecting the first ground - via conductor 84a and the second ground - via conductor 84b. According to this configuration, compared with a configuration in which the second drive - pad electrode 31BB of the second switching element 30B and the ground wiring 62 are connected by a wire, the conductive path between the second drive - pad electrode 31BB of the second switching element 30B and the ground wiring 62 can be shortened. Therefore, the inductance caused by the length of this conductive path can be reduced.

[0144] Viewed from the z - direction, the first ground via conductor 84a is provided at a position overlapping the second drive pad electrode 31BB of the second switching element 30B, and the ground connection wiring 84c is provided on the first resin layer 50A. Viewed from the z - direction, the first ground via conductor 84a and the ground connection wiring 84c are provided so as to overlap and are in contact with each other in the z - direction. In this way, in the portion of the first resin layer 50A that covers the second main element surface 31B of the second switching element 30B, that is, in the portion of the first resin layer 50A close to the interface 57 between the first resin layer 50A and the second resin layer 50B and having a small thickness, the first ground via conductor 84a is provided and is directly connected to the ground connection wiring 84c. Therefore, the conductive path (the z - direction length of the first ground via conductor 84a) between the second drive pad electrode 31BB of the second switching element 30B and the ground connection wiring 84c in the z - direction can be shortened. Thereby, the inductance caused by the length of this conductive path can be reduced.

[0145] (10) The second drive pad electrode 31AB of the first switching element 30A and the first drive pad electrode 31BA of the second switching element 30B are connected by an element - to - element connection conductor 87. The element - to - element connection conductor 87 includes a first drive via conductor 87a connected to the second drive pad electrode 31AB of the first switching element 30A, a second drive via conductor 87b connected to the first drive pad electrode 31BA of the second switching element 30B, and a drive connection wiring 87c connecting the first drive via conductor 87a and the second drive via conductor 87b. According to this configuration, compared with a configuration in which the second drive pad electrode 31AB of the first switching element 30A and the first drive pad electrode 31BA of the second switching element 30B are connected by a wire, the conductive path between the second drive pad electrode 31AB of the first switching element 30A and the first drive pad electrode 31BA of the second switching element 30B can be shortened. Therefore, the inductance caused by the length of this conductive path can be reduced.

[0146] Viewed from the z direction, the first driving via conductor 87a is provided at a position overlapping the second driving pad electrode 31AB of the first switching element 30A, the second driving via conductor 87b is provided at a position overlapping the first driving pad electrode 31BA of the second switching element 30B, and the driving connection wiring 87c is provided on the first resin layer 50A. Viewed from the z direction, each of the driving via conductors 87a, 87b and the driving connection wiring 87c are provided so as to overlap, and are in contact with each other in the z direction. In this way, in the first resin layer 50A, the portion covering the first element main surface 31A of the first switching element 30A, that is, the portion of the first resin layer 50A close to the interface 57 between the first resin layer 50A and the second resin layer 50B and having a thin thickness, the first driving via conductor 87a is provided, and in the first resin layer 50A, the portion covering the second element main surface 31B of the second switching element 30B, that is, the portion of the first resin layer 50A close to the interface 57 between the first resin layer 50A and the second resin layer 50B and having a thin thickness, the second driving via conductor 87b is provided. And both of the driving via conductors 87a, 87b are directly connected to the driving connection wiring 87c. Thereby, the conductive path (the z-direction length of the first driving via conductor 87a) between the second driving pad electrode 31AB of the first switching element 30A and the driving connection wiring 87c in the z direction and the conductive path (the z-direction length of the second driving via conductor 87b) between the first driving pad electrode 31BA of the second switching element 30B and the driving connection wiring 87c in the z direction can both be shortened. Thereby, the inductance caused by the length of these conductive paths can be reduced.

[0147] (11) A plurality of each of the first power supply via conductor 83a and the second power supply via conductor 83b of the power supply connection conductor 83 are provided. According to this configuration, both the inductance of the conductive path between the power supply connection wiring 83c and the first driving pad electrode 31AA of the first switching element 30A and the inductance of the conductive path between the power supply connection wiring 83c and the power supply wiring 61 can be reduced.

[0148] (12) A plurality of first ground via conductors 84a and second ground via conductors 84b of the ground connection conductor 84 for the ground are provided respectively. According to this configuration, both the inductance of the conductive path between the ground connection wiring 84c and the second drive pad electrode 31BB of the second switching element 30B and the inductance of the conductive path between the ground connection wiring 84c and the ground wiring 62 can be reduced.

[0149] (13) A plurality of first drive via conductors 87a and second drive via conductors 87b of the element connection conductor 87 are provided respectively. According to this configuration, both the inductance of the conductive path between the drive connection wiring 87c and the second drive pad electrode 31AB of the first switching element 30A and the inductance of the conductive path between the drive connection wiring 87c and the first drive pad electrode 31BA of the second switching element 30B can be reduced.

[0150] (14) The second drive pad electrode 31AB of the first switching element 30A, the first drive pad electrode 31BA of the second switching element 30B, and the output wiring 63 are connected by an output connection conductor 85. The output connection conductor 85 has an element connection conductor 87 and an output via conductor 85a that connects the element connection conductor 87 and the output wiring 63. According to this configuration, compared with a configuration in which the second drive pad electrode 31AB of the first switching element 30A and the output wiring 63 are connected by a wire, and the first drive pad electrode 31BA of the second switching element 30B and the output wiring 63 are connected by another wire, both the conductive path between the second drive pad electrode 31AB of the first switching element 30A and the output wiring 63 and the conductive path between the first drive pad electrode 31BA of the second switching element 30B and the output wiring 63 can be shortened. Therefore, the inductance caused by the length of these conductive paths can be reduced.

[0151] (15) A plurality of output via conductors 85a of the output connection conductor 85 are provided. According to this configuration, the inductance of the conductive path between the drive connection wiring 87c of the element connection conductor 87 and the output wiring 63 can be reduced.

[0152] (16) The driver pad electrode 43 of the driver 40 and the control wiring 64 are connected by a control connection conductor 86. According to this configuration, compared with a configuration in which the driver pad electrode 43 and the control wiring 64 are connected by a wire, the conductive path between the driver pad electrode 43 and the control wiring 64 can be shortened. Therefore, the inductance caused by the length of this conductive path can be reduced.

[0153] (17) The output wiring 63 is disposed between the first switching element 30A and the second switching element 30B in the x direction. According to this configuration, both the conductive path between the second drive pad electrode 31AB of the first switching element 30A and the output wiring 63 and the conductive path between the first drive pad electrode 31BA of the second switching element 30B and the output wiring 63 can be shortened. Therefore, the inductance caused by the length of these conductive paths can be reduced.

[0154] (18) Each of the power connection wiring 83c of the power connection conductor 83, the ground connection wiring 84c of the ground connection conductor 84, the control connection wiring 86a of the control connection conductor 86, and the drive connection wiring 87c of the element - to - element connection conductor 87 is disposed on the first resin layer 50A. According to this configuration, these wirings 83c, 84c, 86a, 87c can be formed in the same process. Therefore, the manufacturing process of the semiconductor device 10 can be simplified.

[0155] (19) The manufacturing method of the semiconductor device 10 includes a step of forming a first resin layer 850A that seals each of the switching elements 30A, 30B, a step of forming through - holes 58a, 58b in the first resin layer 850A so that each of the switching elements 30A, 30B is exposed, a step of embedding a first control via conductor 81 in the through - hole 58a and embedding a second control via conductor 82 in the through - hole 58b, and a step of mounting a driver 40 that drives each of the switching elements 30A, 30B on the first resin layer 850A so as to be electrically connected to each of the control via conductors 81, 82.

[0156] According to this configuration, the length of each control via conductor 81, 82 in the z direction can be made shorter than the maximum value DW of the distance in the z direction between the main element surface 31X of the switching element 30X shown in FIG. 22 and the wire W and the maximum value DW of the distance in the z direction between the driver main surface 41X of the driver 40X and the wire W, respectively. As a result, compared with the connection between the switching element 30X and the driver 40X by the wire W, the conductive path between each of the switching elements 30A, 30B and the driver 40 can be shortened. Therefore, the inductance caused by the length of the conductive path can be reduced.

[0157] (20) The manufacturing method of the semiconductor device 10 includes a grinding process of removing the first resin layer 850A in the z direction. According to this configuration, the distance in the z direction between each main element surface 31A, 31B of each of the switching elements 30A, 30B in the first resin layer 850A and the surface of the first resin layer 850A opposite to the base material 820 can be made shorter than the distance in the z direction between the driver main surface 41 of the driver 40 in the second resin layer 850B without the grinding process and the surface of the second resin layer 850B on the side opposite to the first resin layer 850A. That is, the thickness of the portion covering each of the switching elements 30A, 30B in the first resin layer 850A can be made thinner than the thickness of the portion covering the driver 40 in the second resin layer 850B. And each control via conductor 81, 82 is provided so as to penetrate in the z direction the portion covering each of the switching elements 30A, 30B in the first resin layer 850A. As a result, the distance in the z direction between the driver back surface 42 of the driver 40 and each main element surface 31A, 31B of each of the switching elements 30A, 30B can be shortened. Therefore, both the conductive path between the driver pad electrode 43 provided on the driver back surface 42 and the first control pad electrode 31AC provided on the first main element surface 31A and the conductive path between another driver pad electrode 43 provided on the driver back surface 42 and the second control pad electrode 31BC provided on the second main element surface 31B can be shortened, so that the inductance caused by the length of these conductive paths can be reduced.

[0158] (21) In the method of manufacturing the semiconductor device 10, in the driver mounting step of mounting the driver 40 on the first resin layer 850A, the driver 40 is flip-chip mounted on the first resin layer 850A. According to this configuration, compared with the case where the driver pad electrode 43 of the driver 40 is connected to each control via conductor 81, 82 (connection conductors 88a, 88b) and the control wiring 64 by, for example, a wire, the driver pad electrode 43, each control via conductor 81, 82 (connection conductors 88a, 88b), and the control wiring 64 can be easily joined.

[0159] (Modified Example) The above embodiment is an example of a form that the semiconductor device related to the present disclosure can take, and is not intended to limit the form. The semiconductor device related to the present disclosure can take a form different from the form exemplified in the above embodiment. One example is a form in which a part of the configuration of the above embodiment is replaced, changed, or omitted, or a form in which a new configuration is added to the above embodiment. Also, the following modified examples can be combined with each other as long as there is no technical contradiction. In the following modified examples, parts common to the above embodiment are denoted by the same reference numerals as those in the above embodiment, and the description thereof is omitted.

[0160] · In the above embodiment, the semiconductor device 10 had two switching elements, the first switching element 30A and the second switching element 30B, as the switching element 30, but it is not limited to this. For example, as shown in FIG. 23, the semiconductor device 10 may include one switching element 30.

[0161] The switching element 30 is arranged at the center in the x direction and closer to the substrate side surface 24 than the substrate side surface 23 on the substrate main surface 21 of the substrate 20. On both sides of the switching element 30 in the x direction of the substrate 20, a power supply wiring 61 and a ground wiring 62 of the conductor part 60 are provided. The power supply wiring 61 is arranged closer to the substrate side surface 25 than the switching element 30 in the x direction. The ground wiring 62 is arranged closer to the substrate side surface 26 than the switching element 30 in the x direction. The power supply wiring 61 and the ground wiring 62 are strip-shaped extending in the y direction, similar to the above-described embodiment.

[0162] The switching element 30 has, for example, a GaN HEMT, similar to the above-described embodiment. The shape of the switching element 30 viewed from the z direction is a rectangular shape having a long side direction and a short side direction. In the illustrated example, the switching element 30 is arranged on the substrate main surface 21 such that the long side direction is along the y direction and the short side direction is along the x direction. On the element main surface 31 of the switching element 30, a first drive pad electrode 33A, a second drive pad electrode 33B, and a control pad electrode 33C are formed. The first drive pad electrode 33A constitutes a drain electrode, the second drive pad electrode 33B constitutes a source electrode, and the control pad electrode 33C constitutes a gate electrode. The first drive pad electrode 33A and the second drive pad electrode 33B are arranged spaced apart from each other in the x direction (the short side direction of the switching element 30) while being aligned with each other in the y direction (the long side direction of the switching element 30). The first drive pad electrode 33A is arranged closer to the power supply wiring 61 than the second drive pad electrode 33B on the element main surface 31. In other words, the second drive pad electrode 33B is arranged closer to the ground wiring 62 than the first drive pad electrode 33A on the element main surface 31. The control pad electrode 33C is arranged so as to be surrounded from one side in the longitudinal direction and both sides in the short side direction of the switching element 30. The control pad electrode 33C is arranged at the end on the other side in the longitudinal direction of the switching element 30. In the illustrated example, the control pad electrode 33C is arranged at the end closer to the substrate side surface 23 on the element main surface 31.

[0163] The driver 40 is arranged to be displaced with respect to the switching element 30 in the z direction, similarly to the above-described embodiment. Since the driver 40 is arranged on the first resin layer 50A (see FIG. 5, for example), it is arranged closer to the device main surface 11 than the element main surface 31 of the switching element 30.

[0164] As shown in FIGS. 23 and 24, the driver 40 is arranged to be displaced closer to the substrate side surface 23 with respect to the switching element 30 in the y direction. When viewed from the z direction, the driver 40 is arranged at a position overlapping with the end closer to the substrate side surface 23 among both ends of the switching element 30 in the y direction. As shown in FIG. 24, the driver 40 is arranged such that the driver pad electrode 43 faces the control pad electrode 33C of the switching element 30 in the z direction.

[0165] The driver pad electrode 43 and the control pad electrode 33C are electrically connected via a control via conductor 90. The control via conductor 90 has the same constituent material and size as each of the control via conductors 81 and 82. The control via conductor 90 penetrates through the portion of the first resin layer 50A where the element main surface 31 of the switching element 30 is arranged. More specifically, the control via conductor 90 extends along the z direction and connects the element main surface 31 and the interface 57 (see FIG. 5) between the first resin layer 50A and the second resin layer 50B.

[0166] The first drive pad electrode 33A of the switching element 30 and the power supply wiring 61 are connected by a power supply connection conductor 83. This connection structure is the same as that of the above-described embodiment. Each of the plurality of first power supply via conductors 83a of the power supply connection conductor 83 extends along the z direction and is in contact with both the first drive pad electrode 33A and the power supply connection wiring 83c of the power supply connection conductor 83. Each of the plurality of second power supply via conductors 83b of the power supply connection conductor 83 extends along the z direction and is in contact with both the power supply wiring 61 and the power supply connection wiring 83c.

[0167] The second drive pad electrode 33B of the switching element 30 and the ground wiring 62 are connected by a ground connection conductor 84. This connection structure is the same as that of the above-described embodiment. Each of the plurality of first ground via conductors 84a of the ground connection conductor 84 extends along the z direction and is in contact with both the second drive pad electrode 33B and the ground connection wiring 84c of the ground connection conductor 84. Each of the plurality of second ground via conductors 84b of the ground connection conductor 84 extends along the z direction and is in contact with both the ground wiring 62 and the ground connection wiring 84c.

[0168] When viewed from the z direction, a plurality of control wirings 64 are provided near the substrate side surface 23 closer to the substrate than the center in the y direction of the substrate 20. The plurality of control wirings 64 are the same as the plurality of control wirings 64 of the above-described embodiment in terms of constituent material, size, number, and arrangement position.

[0169] The other driver pad electrode 43 of the driver 40 and the control wiring 64 are connected by a control connection conductor 86. This connection structure is the same as that of the above-described embodiment. The control connection wiring 86a of the control connection conductor 86 is connected to the driver pad electrode 43 of the driver 40 via a conductive bonding material. The connection via conductor 86b of the control connection conductor 86 extends along the z direction and is in contact with both the control wiring 64 and the control connection wiring 86a.

[0170] The manufacturing method of the semiconductor device 10 of the modification example shown in FIGS. 23 and 24 is substantially the same as the manufacturing method of the above-described embodiment. Specifically, the manufacturing method of the semiconductor device 10 of the modification example mainly includes a wiring layer forming step, a switching element mounting step, a first resin layer forming step, a connection conductor forming step, a driver mounting step, a second resin layer forming step, an exterior terminal forming step, and a cutting step.

[0171] In the wiring layer forming step, the power supply wiring 61 and the ground wiring 62 are formed as the conductor portion 60, and the output wiring 63 is not formed. The formation and grinding of the base material 820 are the same as those of the above-described embodiment.

[0172] In the switching element mounting process, it is different in that the switching element 30 is mounted on the base material 820 instead of the respective switching elements 30A and 30B. The mounting method of the switching element 30 is the same as that in the above embodiment. The first resin layer forming process is the same as that in the above embodiment.

[0173] The connection conductor forming process is different from the connection conductor forming process of the above embodiment in that the control via conductor 90 is formed instead of the respective control via conductors 81 and 82, and the output connection conductor 85 is not formed. The forming methods of the power supply connection conductor 83 and the ground connection conductor 84 are the same as those in the above embodiment. Each of the driver mounting process and the second resin layer forming process is the same as that in the above embodiment.

[0174] The exterior terminal forming process is different from the exterior terminal forming process of the above embodiment in that the output terminal 73 is not formed. The forming methods of the power supply terminal 71, the ground terminal 72, and the control terminal 74 are the same as those in the above embodiment. The cutting process is the same as that in the above embodiment.

[0175] According to the semiconductor device 10 of the modification example shown in FIGS. 23 and 24, the effects according to (1) to (9), (11), (12), (16), and (19) to (21) of the above embodiment can be obtained.

[0176] · In the above embodiment, the semiconductor device 10 had two switching elements, i.e., the first switching element 30A and the second switching element 30B, as the switching element 30, and one driver 40, but it is not limited thereto. For example, as shown in FIG. 25, the semiconductor device 10 may include a first switching element 30A, a second switching element 30B, a third switching element 30C, and a fourth switching element 30D as four switching elements, and a first driver 40A and a second driver 40B as two drivers.

[0177] The third switching element 30C has the same configuration and size as the first switching element 30A, and the fourth switching element 30D has the same configuration and size as the second switching element 30B. The third switching element 30C has a third element main surface 31C and a third element back surface (not shown) facing opposite sides in the z direction. On the third element main surface 31C, a first drive pad electrode 31CA, a second drive pad electrode 31CB, and a third control pad electrode 31CC are formed. The fourth switching element 30D has a fourth element main surface 31D and a fourth element back surface (not shown) facing opposite sides in the z direction. On the fourth element main surface 31D, a first drive pad electrode 31DA, a second drive pad electrode 31DB, and a fourth control pad electrode 31DC are formed.

[0178] The first driver 40A is a driver that drives the first switching element 30A and the second switching element 30B. The second driver 40B is a driver that drives the third switching element 30C and the fourth switching element 30D. Each of the configuration of the first driver 40A and the configuration of the second driver 40B is the same as the configuration of the driver 40 in the above embodiment.

[0179] As shown in FIG. 25, the shape of the semiconductor device 10 viewed from the z direction is a rectangular shape in which the x direction is the long side direction and the y direction is the short side direction. Therefore, each of the shape of the substrate 20 viewed from the z direction and the shape of the sealing resin 50 viewed from the z direction is a rectangular shape in which the x direction is the long side direction and the y direction is the short side direction.

[0180] On the substrate 20, a first power supply wiring 61A, a first ground wiring 62A, and a first output wiring 63A that are electrically connected to the switching elements 30A and 30B, a second power supply wiring 61B, a second ground wiring 62B, and a second output wiring 63B that are electrically connected to the switching elements 30C and 30D, a first control wiring 64A that is electrically connected to the first driver 40A, and a second control wiring 64B that is electrically connected to the second driver 40B are provided.

[0181] The arrangement relationship of each switching element 30A to 30D and each driver 40A, 40B will be described. Each of the switching elements 30A to 30D is mounted on the main surface 21 of the substrate 20, similar to the above-described embodiment. The switching elements 30A to 30D are arranged at intervals in the x direction while being aligned with each other in the y direction. Each of the switching elements 30A to 30D is arranged closer to the side surface 24 of the substrate in the y direction. In the x direction, the first switching element 30A and the second switching element 30B are arranged closer to the side surface 25 of the substrate than the third switching element 30C and the fourth switching element 30D. In the x direction, the first switching element 30A is arranged closer to the side surface 25 of the substrate than the second switching element 30B. In the x direction, the third switching element 30C is arranged closer to the side surface 25 of the substrate than the fourth switching element 30D.

[0182] The first driver 40A is arranged offset in the z direction with respect to each of the switching elements 30A, 30B, similar to the driver 40 in the above-described embodiment. The first driver 40A is arranged closer to the main surface 11 of the device (see FIG. 5) than the main surfaces 31A, 31B of each of the switching elements 30A, 30B. The first driver 40A is arranged on the first resin layer 50A.

[0183] The second driver 40B is arranged offset in the z direction with respect to each of the switching elements 30C, 30D, similar to the driver 40 in the above-described embodiment. The second driver 40B is arranged closer to the main surface 11 of the device than the main surfaces 31C, 31D of each of the switching elements 30C, 30D. The second driver 40B is arranged on the first resin layer 50A. The second driver 40B is arranged at a position aligned with the first driver 40A in the z direction.

[0184] As shown in FIGS. 25 and 26, when viewed from the z direction, the first driver 40A and the second driver 40B are arranged at intervals in the x direction while being aligned with each other in the y direction.

[0185] As shown in FIG. 26, the first driver 40A is disposed at a position overlapping a part of each of the switching elements 30A and 30B when viewed from the z direction and is displaced with respect to each of the switching elements 30A and 30B in the y direction. More specifically, similar to the above-described embodiment, the first driver 40A is disposed with respect to each of the switching elements 30A and 30B such that the driver pad electrode 43A faces the first control pad electrode 31AC of the first switching element 30A in the z direction and another driver pad electrode 43A faces the second control pad electrode 31BC of the second switching element 30B in the z direction. When viewed from the z direction, the first driver 40A is disposed so as to protrude toward the substrate side surface 23 with respect to each of the switching elements 30A and 30B.

[0186] The second driver 40B is disposed at a position overlapping a part of each of the switching elements 30C and 30D when viewed from the z direction and is displaced with respect to each of the switching elements 30C and 30D in the y direction. More specifically, similar to the above-described embodiment, the second driver 40B is disposed with respect to each of the switching elements 30C and 30D such that the driver pad electrode 43B faces the third control pad electrode 31CC of the third switching element 30C in the z direction and another driver pad electrode 43B faces the fourth control pad electrode 31DC of the fourth switching element 30D in the z direction. When viewed from the z direction, the second driver 40B is disposed so as to protrude toward the substrate side surface 23 with respect to each of the switching elements 30C and 30D.

[0187] Next, the electrical connection relationship within the semiconductor device 10 will be described. As shown in FIG. 26, the first switching element 30A and the second switching element 30B are electrically connected to the first driver 40A. Specifically, the first control pad electrode 31AC of the first switching element 30A is electrically connected to the driver pad electrode 43A of the first driver 40A. The second control pad electrode 31BC of the second switching element 30B is electrically connected to another driver pad electrode 43A of the first driver 40A. The arrangement relationship and connection structure between the first switching element 30A and the second switching element 30B and the first driver 40A are the same as the arrangement relationship and connection structure between each of the switching elements 30A and 30B and the driver 40 in the above embodiment. That is, the first control pad electrode 31AC and the driver pad electrode 43A are electrically connected via the first control via conductor 81. The second control pad electrode 31BC and another driver pad electrode 43A are electrically connected via the second control via conductor 82.

[0188] The third switching element 30C and the fourth switching element 30D are electrically connected to the second driver 40B. Specifically, the third control pad electrode 31CC of the third switching element 30C is electrically connected to the driver pad electrode 43B of the second driver 40B. The fourth control pad electrode 31DC of the fourth switching element 30D is electrically connected to another driver pad electrode 43B of the second driver 40B. The arrangement relationship and connection structure between the third switching element 30C and the fourth switching element 30D and the second driver 40B are the same as the arrangement relationship and connection structure between each of the switching elements 30A and 30B and the driver 40 in the above embodiment. That is, the third control pad electrode 31CC and the driver pad electrode 43B are electrically connected via the third control via conductor 81A. The fourth control pad electrode 31DC and another driver pad electrode 43B are electrically connected via the fourth control via conductor 82A.

[0189] The arrangement relationship and connection structure among the switching elements 30A and 30B, the first power supply wiring 61A, the first ground wiring 62A, and the first output wiring 63A are the same as the arrangement relationship and connection structure among the switching elements 30A and 30B, the power supply wiring 61, the ground wiring 62, and the output wiring 63 in the above embodiment.

[0190] The first drive pad electrode 31AA of the first switching element 30A and the first power supply wiring 61A are connected by a first power supply connection conductor 83A. The first power supply connection conductor 83A has the same configuration as the power supply connection conductor 83 in the above embodiment.

[0191] The second drive pad electrode 31BB of the second switching element 30B and the first ground wiring 62A are connected by a first ground connection conductor 84A. The first ground connection conductor 84A has the same configuration as the ground connection conductor 84 in the above embodiment.

[0192] The second drive pad electrode 31AB of the first switching element 30A and the first drive pad electrode 31BA of the second switching element 30B are connected by a first inter-element connection conductor 87A. The first inter-element connection conductor 87A has the same configuration as the inter-element connection conductor 87 in the above embodiment.

[0193] Both the second drive pad electrode 31AB of the first switching element 30A and the first drive pad electrode 31BA of the second switching element 30B and the first output wiring 63A are connected by a first output connection conductor 85A. The first output connection conductor 85A includes a first inter-element connection conductor 87A and a plurality of first output via conductors 85b. Each first output via conductor 85b has the same configuration as the output via conductor 85a in the above embodiment. Each first output via conductor 85b extends along the z direction and is in contact with both the first output wiring 63A and the first inter-element connection conductor 87A.

[0194] The arrangement relationship and connection structure among the switching elements 30C and 30D, the second power supply wiring 61B, the second ground wiring 62B, and the second output wiring 63B are the same as the arrangement relationship and connection structure among the switching elements 30A and 30B, the power supply wiring 61, the ground wiring 62, and the output wiring 63 in the above embodiment.

[0195] The first drive pad electrode 31CA of the third switching element 30C and the second power supply wiring 61B are connected by a second power supply connection conductor 83B. The second power supply connection conductor 83B has the same configuration as the power supply connection conductor 83 in the above embodiment.

[0196] The second drive pad electrode 31DB of the fourth switching element 30D and the second ground wiring 62B are connected by a second ground connection conductor 84B. The second ground connection conductor 84B has the same configuration as the ground connection conductor 84 in the above embodiment.

[0197] The second drive pad electrode 31CB of the third switching element 30C and the first drive pad electrode 31DA of the fourth switching element 30D are connected by a second inter-element connection conductor 87B. The second inter-element connection conductor 87B has the same configuration as the inter-element connection conductor 87 in the above embodiment.

[0198] Both the second drive pad electrode 31CB of the third switching element 30C and the first drive pad electrode 31DA of the fourth switching element 30D and the second output wiring 63B are connected by a second output connection conductor 85B. The second output connection conductor 85B includes the second inter-element connection conductor 87B and a plurality of second output via conductors 85c. Each second output via conductor 85c has the same configuration as the output via conductor 85a in the above embodiment. Each second output via conductor 85c extends along the z direction and is in contact with both the second output wiring 63B and the second inter-element connection conductor 87B.

[0199] The substrate 20 is provided with a plurality of control wirings 64A electrically connected to the first driver 40A and a plurality of control wirings 64B electrically connected to the second driver 40B. The configuration of each of the control wirings 64A and 64B is the same as that of the control wiring 64 in the above embodiment.

[0200] The plurality of first control wirings 64A are dispersedly provided at a portion of the substrate 20 closer to the substrate side surface 23 than the first driver 40A and at a portion of the substrate 20 closer to the substrate side surface 25 than the first driver 40A. The plurality of second control wirings 64B are dispersedly provided at a portion of the substrate 20 closer to the substrate side surface 23 than the second driver 40B and at a portion of the substrate 20 closer to the substrate side surface 26 than the second driver 40B. Each of the control wirings 64A and 64B has the same configuration as that of the control wiring 64 in the above embodiment.

[0201] The first driver 40A and the plurality of first control wirings 64A are electrically connected by a first control connection conductor 86A. The second driver 40B and the plurality of second control wirings 64B are electrically connected by a second control connection conductor 86B. Each of the control connection conductors 86A and 86B has the same configuration as that of the control connection conductor 86 in the above embodiment.

[0202] In this way, each of the switching elements 30A, 30B and the first driver 40A are electrically connected to each other, and each of the switching elements 30C, 30D and the second driver 40B are electrically connected to each other. On the other hand, each of the switching elements 30A, 30B and the first driver 40A and each of the switching elements 30C, 30D and the second driver 40B are insulated from each other.

[0203] The manufacturing method of the semiconductor device 10 of the modified example shown in FIGS. 25 and 26 is substantially the same as the manufacturing method of the semiconductor device 10 of the above embodiment. Specifically, the manufacturing method of the semiconductor device 10 of the modified example mainly includes a wiring layer forming step, a switching element mounting step, a first resin layer forming step, a connection conductor forming step, a driver mounting step, a second resin layer forming step, an external terminal forming step, and a cutting step.

[0204] In the wiring layer forming process, the difference from the wiring layer forming process of the above embodiment lies in forming power supply wirings 61A and 61B, ground wirings 62A and 62B, output wirings 63A and 63B, and control wirings 64A and 64B as the conductor portions 60. The formation and grinding of the base material 820 are the same as those in the above embodiment.

[0205] In the switching element mounting process, the difference lies in mounting each of the switching elements 30C and 30D on the base material 820 in addition to each of the switching elements 30A and 30B. The mounting method of each of the switching elements 30C and 30D is the same as that in the above embodiment. The first resin layer forming process is the same as that in the above embodiment.

[0206] In the connection conductor forming process, the difference from the connection conductor forming process of the above embodiment lies in forming each of the control via conductors 81A and 82A, power supply connection conductors 83A and 83B, ground connection conductors 84A and 84B, output connection conductors 85A and 85B, and control connection conductors 86A and 86B. The forming method of these connection conductors 83A, 83B, 84A, 84B, 85A, 85B, 86A, and 86B is the same as that in the above embodiment. Each of the driver mounting process and the second resin layer forming process is the same as that in the above embodiment.

[0207] In the external terminal forming process, the difference from the external terminal forming process of the above embodiment lies in forming terminals corresponding to each of the power supply wirings 61A and 61B, ground wirings 62A and 62B, output wirings 63A and 63B, and control wirings 64A and 64B as the external terminals 70. The forming method of the above terminals is the same as that in the above embodiment. The cutting process is the same as that in the above embodiment.

[0208] According to the configuration of the semiconductor device 10 of the modified example shown in FIGS. 25 and 26, the effects (1) to (21) of the above embodiment can be obtained. Note that, in the semiconductor device 10 of the modification examples shown in FIGS. 25 and 26, the configurations of the first driver 40A and the second driver 40B (for example, the arrangement configurations of the driver pad electrodes 43A and 43B) were different, but it is not limited thereto. For example, the first driver 40A and the second driver 40B may be drivers having the same configuration. Thereby, since the first driver 40A and the second driver 40B can be made common, the manufacturing cost of the semiconductor device 10 can be reduced.

[0209] Also, in the semiconductor device 10 of the modification examples shown in FIGS. 25 and 26, instead of the first driver 40A and the second driver 40B, a driver 40 for driving each of the switching elements 30A to 30D may be provided. That is, the semiconductor device 10 of the modification example may have a configuration including one driver 40.

[0210] ·In the above embodiment, the driver 40 was encapsulated by the encapsulating resin 50, but it is not limited thereto. The driver 40 may be provided outside the encapsulating resin 50. In one example, as shown in FIG. 27, the second resin layer 50B may be omitted from the encapsulating resin 50. That is, the encapsulating resin 50 is composed of the first resin layer 50A. In this case, the first resin layer 50A corresponds to the resin layer. The driver 40 is disposed on the first resin layer 50A. According to this configuration, the effects of (1) to (4) and (6) to (21) of the above embodiment can be obtained.

[0211] · In the above-described embodiment, the driver 40 is arranged with respect to each of the switching elements 30A and 30B such that the first control pad electrode 31AC of the first switching element 30A and the driver pad electrode 43 of the driver 40 face each other in the z direction, and the second control pad electrode 31BC of the second switching element 30B and another driver pad electrode 43 of the driver 40 face each other in the z direction. However, the present invention is not limited to this. For example, as shown in FIG. 28, the driver 40 may be arranged with respect to the first switching element 30A such that the driver pad electrode 43 of the driver 40 is closer to the device side surface 13 (resin side surface 53) than the first control pad electrode 31AC of the first switching element 30A. In the illustrated example, the driver 40 is arranged at a position where it does not overlap the first switching element 30A when viewed from the z direction.

[0212] The driver pad electrode 43 of the driver 40 and the first control pad electrode 31AC of the first switching element 30A are electrically connected via the first control via conductor 81 and the control connection wiring 91. More specifically, the control connection wiring 91 is formed on the first resin layer 50A. The control connection wiring 91 extends in the y direction so as to overlap both the first control via conductor 81 and the driver pad electrode 43 when viewed from the z direction. The control connection wiring 91 is composed of, for example, a laminate of Ti and Cu. The first control via conductor 81 is in contact with the control connection wiring 91. The control connection wiring 91 is in contact with the driver pad electrode 43 via a conductive bonding material. Although not shown, the driver 40 is arranged shifted in the y direction with respect to the second switching element 30B in the same manner as the first switching element 30A.

[0213] The arrangement relationship between the driver 40 and the first switching element 30A is not limited to the driver 40 being arranged at a position where it does not overlap the first switching element 30A when viewed from the z direction as described above. For example, the driver 40 may be arranged at a position where it overlaps the first switching element 30A when viewed from the z direction in a state where the driver pad electrode 43 and the first control pad electrode 31AC do not face each other in the z direction.

[0214] · In the above-described embodiment, each of the switching elements 30A and 30B is a lateral transistor in which a first drive pad electrode 31AA, 31BA, a second drive pad electrode 31AB, 31BB, and each control pad electrode 31AC, 31BC are formed on each of the element main surfaces 31A and 31B. However, the configuration of the transistor is not limited to this. For example, each of the switching elements 30A and 30B may be a vertical transistor in which a first drive pad electrode 31AA, 31BA is formed on each of the element back surfaces 32A and 32B, and a second drive pad electrode 31AB, 31BB and each control pad electrode 31AC, 31BC are formed on each of the element main surfaces 31A and 31B.

[0215] FIGS. 29 and 30 show an example of the configuration of the substrate 20 and the wiring portion 80 when each of the switching elements 30A and 30B is a vertical transistor. As shown in FIG. 29, on the substrate 20, a power supply wiring 61, a ground wiring 62, an output wiring 63, and a plurality of control wirings 64 are provided. In FIG. 29, in the x direction, the power supply wiring 61 is arranged closer to the substrate side surface 26 than the output wiring 63, and the ground wiring 62 is arranged closer to the substrate side surface 25 than the output wiring 63. Note that the arrangement mode of the power supply wiring 61, the ground wiring 62, and the output wiring 63 may be the same as the arrangement mode of the power supply wiring 61, the ground wiring 62, and the output wiring 63 in the above-described embodiment.

[0216] As shown in FIG. 29, the first switching element 30A is mounted on the power supply wiring 61, and the second switching element 30B is mounted on the output wiring 63 provided on the substrate 20. For this reason, the length of the power supply wiring 61 in the x direction shown in FIG. 29 is longer than the length of the power supply wiring 61 in the x direction in the above-described embodiment, and the length of the output wiring 63 in the x direction shown in FIG. 29 is longer than the length of the output wiring 63 in the x direction in the above-described embodiment. As shown in FIG. 29, the length of the output wiring 63 in the x direction is longer than the length of the power supply wiring 61 in the x direction.

[0217] The back surface 32A of the first switching element 30A of the first switching element 30A is joined to the power supply wiring 61 by a conductive bonding material. As a result, the first drive pad electrode 31AA of the first switching element 30A is electrically connected to the power supply wiring 61.

[0218] The back surface 32B of the second switching element 30B of the second switching element 30B is joined to the output wiring 63 by a conductive bonding material. As a result, the first drive pad electrode 31BA of the second switching element 30B is electrically connected to the output wiring 63.

[0219] As shown in FIG. 30, the driver 40 is arranged to be displaced in the z direction with respect to each of the switching elements 30A and 30B, similarly to the above-described embodiment. The driver 40 is arranged closer to the device main surface 11 than the main surfaces 31A and 31B of each of the switching elements 30A and 30B. The driver 40 is arranged on the first resin layer 50A.

[0220] When viewed from the z direction, the driver 40 is arranged at a position overlapping a part of each of the switching elements 30A and 30B and displaced in the y direction with respect to each of the switching elements 30A and 30B. More specifically, the driver 40 is arranged with respect to each of the switching elements 30A and 30B such that the driver pad electrode 43 faces the first control pad electrode 31AC of the first switching element 30A in the z direction, and another driver pad electrode 43 faces the second control pad electrode 31BC of the second switching element 30B in the z direction. When viewed from the z direction, the driver 40 is arranged to protrude toward the substrate side surface 23 with respect to each of the switching elements 30A and 30B. The connection structure between the driver 40 and the plurality of control wirings 64 is the same as that of the above-described embodiment.

[0221] The first switching element 30A and the second switching element 30B are electrically connected to the driver 40. Specifically, the first control pad electrode 31AC of the first switching element 30A is electrically connected to the driver pad electrode 43 of the driver 40. The second control pad electrode 31BC of the second switching element 30B is electrically connected to another driver pad electrode 43 of the driver 40. The arrangement relationship and connection structure between the first switching element 30A and the second switching element 30B and the driver 40 are the same as the arrangement relationship and connection structure between each of the switching elements 30A and 30B and the driver 40 in the above embodiment. That is, the first control pad electrode 31AC and the driver pad electrode 43 are electrically connected via the first control via conductor 81. The second control pad electrode 31BC and another driver pad electrode 43 are electrically connected via the second control via conductor 82.

[0222] The second drive pad electrode 31AB of the first switching element 30A and the output wiring 63 are electrically connected by an output connection conductor 92. The output connection conductor 92 includes a plurality of first output via conductors 92a connected to the second drive pad electrode 31AB, a plurality of second output via conductors 92b connected to the output wiring 63, and an output connection wiring 92c connecting the plurality of first output via conductors 92a and the plurality of second output via conductors 92b.

[0223] Each of the plurality of first output via conductors 92a is arranged at a position overlapping the second drive pad electrode 31AB when viewed from the z direction. The plurality of first output via conductors 92a are arranged spaced apart from each other in the x direction and the y direction. The configuration and size of each first output via conductor 92a are the same as the configuration and size of the first power supply via conductor 83a. Each first output via conductor 92a is in contact with the second drive pad electrode 31AB.

[0224] Each of the plurality of second output via conductors 92b is arranged at a position overlapping with the protruding portion 63a of the output wiring 63 protruding in the x direction from the second switching element 30B as viewed from the z direction. The protruding portion 63a extends in the x direction toward the first switching element 30A with respect to the second switching element 30B. Therefore, the plurality of second output via conductors 92b are arranged between the first switching element 30A and the second switching element 30B in the x direction. The plurality of second output via conductors 92b are arranged spaced apart from each other in the x direction and the y direction. The configuration and size of each second output via conductor 92b are the same as the configuration and size of the second power supply via conductor 83b. Each second output via conductor 92b is in contact with the output wiring 63.

[0225] The output connection wiring 92c extends in the x direction so as to overlap both the first output via conductors 92a and the second output via conductors 92b as viewed from the z direction. The output connection wiring 92c is in contact with both the first output via conductors 92a and the second output via conductors 92b. The output connection wiring 92c is arranged on the first resin layer 50A (see FIG. 5).

[0226] The second drive pad electrode 31BB of the second switching element 30B is electrically connected to the ground wiring 62 by the ground connection conductor 84. The configuration of the ground connection conductor 84 is the same as the configuration of the ground connection conductor 84 in the above embodiment.

[0227] ·In the above embodiment, the external terminal 70 was provided on the back surface 12 of the device, but it is not limited to this. The external terminal 70 may be provided on the main surface 11 of the device. In this case, the substrate 20 is laminated, for example, on the second resin layer 50B. That is, the semiconductor device 10X has a configuration in which the first resin layer 50A, the second resin layer 50B, and the substrate 20 are laminated in this order. Each of the switching elements 30A and 30B is encapsulated in the first resin layer 50A, and the driver 40 is encapsulated in the second resin layer 50B. The power supply wiring 61, the ground wiring 62, the output wiring 63, and the plurality of control wirings 64 on the substrate 20 are electrically connected to each of the switching elements 30A and 30B and the driver 40 by via conductors penetrating both the first resin layer 50A and the second resin layer 50B and connection wirings formed on the second resin layer 50B.

[0228] ·In the above embodiment, the driver 40 is encapsulated without being exposed by the second resin layer 50B, but it is not limited to this. For example, the driver 40 may be encapsulated in the second resin layer 50B such that the main surface 41 of the driver is exposed in the z direction from the second resin layer 50B.

[0229] ·In the above embodiment, since each of the switching elements 30A and 30B is disposed on the main surface 21 of the substrate 20, the switching elements 30A and 30B are not exposed from the back surface 12 of the device, but it is not limited to this. For example, the back surfaces 32A and 32B of each of the switching elements 30A and 30B may be exposed from the back surface 12 of the device in the z direction.

[0230] ·In the above embodiment, each of the switching elements 30A and 30B is disposed on the main surface 21 of the substrate 20, and the driver 40 is disposed on the first resin layer 50A, but it is not limited to this. In one example, the driver 40 may be disposed on the main surface 21 of the substrate, and each of the switching elements 30A and 30B may be disposed on the first resin layer 50A. The driver 40 is encapsulated by the first resin layer 50A, and each of the switching elements 30A and 30B is encapsulated by the second resin layer 50B. Note that the second resin layer 50B may be omitted.

[0231] · In the above embodiment, the connection conductors 88a and 88b may be omitted. In this case, the first control via conductor 81 is electrically connected to the driver pad electrode 43 of the driver 40 via a conductive bonding material, and the second control via conductor 82 is electrically connected to another driver pad electrode 43 of the driver 40 via a conductive bonding material.

[0232] · In the above embodiment, the arrangement relationship of the power supply wiring 61, the ground wiring 62, and the output wiring 63 can be arbitrarily changed. In one example, the power supply wiring 61 may be arranged between the ground wiring 62 and the output wiring 63 in the x direction.

[0233] · In the above embodiment, the first switching element 30A and the second switching element 30B have different configurations, but the present invention is not limited to this. For example, the first switching element 30A and the second switching element 30B may have the same configuration. Thereby, in the semiconductor device 10, the first switching element 30A and the second switching element 30B can be made common, so that the manufacturing cost of the semiconductor device 10 can be reduced.

[0234] · In the above embodiment, the first drive pad electrode 31AA of the first switching element 30A and the power supply wiring 61 may be connected by, for example, one or a plurality of wires. The second drive pad electrode 31AB of the first switching element 30A and the first drive pad electrode 31BA of the second switching element 30B may be connected by one or a plurality of wires. The second drive pad electrode 31BB of the second switching element 30B and the ground wiring 62 may be connected by, for example, one or a plurality of wires.

[0235] · In the above embodiment, the number of the first control via conductors 81 and the number of the second control via conductors 82 can each be arbitrarily changed. In one example, a plurality of the first control via conductors 81 may be provided, or a plurality of the second control via conductors 82 may be provided.

[0236] · In the above embodiment, the number of the first power supply via conductors 83a of the power supply connection conductor 83 and the number of the second power supply via conductors 83b can each be arbitrarily changed. In one example, the number of the first power supply via conductors 83a may be 1, and the number of the second power supply via conductors 83b may be 1.

[0237] · In the above embodiment, the number of the first ground via conductors 84a of the ground connection conductor 84 and the number of the second ground via conductors 84b can each be arbitrarily changed. In one example, the number of the first ground via conductors 84a may be 1, and the number of the second ground via conductors 84b may be 1.

[0238] · In the above embodiment, the number of the output via conductors 85a of the output connection conductor 85 can be arbitrarily changed. In one example, the number of the output via conductors 85a may be 1. · In the above embodiment, the number of the first driving via conductors 87a of the element connection conductor 87 and the number of the second driving via conductors 87b can each be arbitrarily changed. In one example, the number of the first driving via conductors 87a may be 1, and the number of the second driving via conductors 87b may be 1.

[0239] · In the above embodiment, the diameter of each control via conductor 81, 82, each power supply via conductor 83a, 83b, each ground via conductor 84a, 84b, the output via conductor 85a, and each driving via conductor 87a, 87b can be arbitrarily changed. In one example, the diameters of each control via conductor 81, 82, each power supply via conductor 83a, 83b, each ground via conductor 84a, 84b, the output via conductor 85a, and each driving via conductor 87a, 87b may be equal to each other.

[0240] ·In the above-described embodiment, although each of the switching elements 30A and 30B was encapsulated by the first resin layer 50A, it is not limited thereto. For example, the first resin layer 50A may have a first encapsulation layer that encapsulates the first switching element 30A and a second encapsulation layer that encapsulates the second switching element 30B. The first encapsulation layer and the second encapsulation layer are formed individually. Thus, the semiconductor device 10 may include resin layers that individually encapsulate a plurality of switching elements.

[0241] ·In each of the above-described embodiments, the number and arrangement pattern of each of the first drive pad electrodes 31AA, the second drive pad electrodes 31AB, and the first control pad electrode 31AC of the first switching element 30A can be arbitrarily changed. In one example, a plurality of each of the drive pad electrodes 31AA and 31AB may be formed on the first element main surface 31A. In this case, the first drive pad electrode 31AA and the second drive pad electrode 31AB may be alternately arranged in the long side direction of the first element main surface 31A in a state where they are aligned with each other in the short side direction of the first element main surface 31A when viewed from the z direction.

[0242] ·In each of the above-described embodiments, the number and arrangement pattern of each of the first drive pad electrodes 31BA, the second drive pad electrodes 31BB, and the second control pad electrode 31BC of the second switching element 30B can be arbitrarily changed. In one example, a plurality of each of the drive pad electrodes 31BA and 31BB may be formed on the second element main surface 31B. In this case, the first drive pad electrode 31BA and the second drive pad electrode 31BB may be alternately arranged in the long side direction of the second element main surface 31B in a state where they are aligned with each other in the short side direction of the second element main surface 31B when viewed from the z direction. Note that the third switching element 30C and the fourth switching element 30D shown in FIGS. 25 and 26 can be similarly changed.

[0243] ·In the above-described embodiment, in the first resin layer forming step of the method for manufacturing the semiconductor device 10, the grinding step of grinding the first resin layer 850A in the z direction may be omitted. · In the above embodiment, the length of the first resin layer 50A in the z direction can be arbitrarily changed. In one example, the thickness of the portion of the first resin layer 50A that covers the main surfaces 31A and 31B of the respective switching elements 30A and 30B may be equal to the thickness (distance D) of the portion of the second resin layer 50B that covers the driver main surface 41 of the driver 40.

[0244] (Appendix) The technical idea that can be grasped from the above embodiment and each of the above modification examples is described below. (Appendix A1) A switching element, A resin layer that seals at least the driver, A semiconductor device comprising the resin layer with the thickness direction of the resin layer as the height direction, In the height direction of the semiconductor device, a driver that is arranged offset with respect to the switching element and drives the switching element, A control via conductor that penetrates the resin layer in the height direction of the semiconductor device and electrically connects the switching element and the driver, A semiconductor device comprising the above.

[0245] (Appendix B1) A switching element, A resin layer that seals at least the switching element, A semiconductor device comprising the resin layer with the thickness direction of the resin layer as the height direction, In the height direction of the semiconductor device, a driver that is arranged offset with respect to the switching element and drives the switching element, A control via conductor that penetrates the resin layer in the height direction of the semiconductor device and electrically connects the switching element and the driver, A semiconductor device comprising the above.

[0246] (Appendix B2) When viewed from the height direction of the semiconductor device, the driver is arranged at a position overlapping a part of the switching element The semiconductor device described in Supplementary Note B1.

[0247] (Supplementary Note B3) The switching element has an element main surface on which a control pad electrode electrically connected to the control via conductor is formed. The driver has a driver main surface and a driver back surface facing opposite sides in the height direction of the semiconductor device. The driver main surface faces the same side as the element main surface. On the driver back surface, a driver pad electrode electrically connected to the control via conductor is formed. In the height direction of the semiconductor device, the control pad electrode and the driver pad electrode face each other. The control pad electrode and the driver pad electrode are connected by the control via conductor. The length of the control via conductor in the height direction of the semiconductor device is less than 1 mm. The semiconductor device described in Supplementary Note B1.

[0248] (Supplementary Note B4) The driver is disposed on the resin layer. The semiconductor device according to any one of Supplementary Notes B1 to B3.

[0249] (Supplementary Note B5) The driver has a driver main surface and a driver back surface facing opposite sides in the height direction of the semiconductor device. The driver main surface faces the same side as the element main surface. On the driver back surface, a driver pad electrode electrically connected to the control via conductor is formed. The driver pad electrode is joined to the control via conductor via a conductive joining material. The semiconductor device described in Supplementary Note B4.

[0250] (Supplementary Note B6) The switching element includes a first switching element and a second switching element. When viewed from the height direction of the semiconductor device, the driver is disposed at a position overlapping both a part of the first switching element and a part of the second switching element. The semiconductor device according to appended note B1.

[0251] (Appended note B7) Each of the first element main surface of the first switching element and the second element main surface of the second switching element has a first drive pad electrode and a second drive pad electrode. It has an inter-element connection conductor connecting the second drive pad electrode of the first switching element and the first drive pad electrode of the second switching element. The inter-element connection conductor includes a first drive via conductor connected to the second drive pad electrode of the first switching element, a second drive via conductor connected to the first drive pad electrode of the second switching element, and a drive connection wiring connecting the first drive via conductor and the second drive via conductor. The drive connection wiring is disposed on the resin layer. The semiconductor device according to appended note B1.

[0252] (Appended note B8) It includes a substrate on which the first switching element and the second switching element are mounted. The substrate has a power supply wiring electrically connected to the first drive pad electrode of the first switching element, a ground wiring electrically connected to the second drive pad electrode of the second switching element, and an output wiring electrically connected to both the second drive pad electrode of the first switching element and the first drive pad electrode of the second switching element. A power connection conductor that electrically connects the first drive pad electrode of the first switching element and the power supply wiring, a ground connection conductor that electrically connects the second drive pad electrode of the second switching element and the ground wiring, and an output connection conductor that electrically connects both the second drive pad electrode of the first switching element and the first drive pad electrode of the second switching element and the output wiring, are provided. The power connection conductor includes a first power via conductor connected to the first drive pad electrode of the first switching element, a second power via conductor connected to the power supply wiring, and a power connection wiring that connects the first power via conductor and the second power via conductor. The ground connection conductor includes a first ground via conductor connected to the second drive pad electrode of the second switching element, a second ground via conductor connected to the ground wiring, and a ground connection wiring that connects the first ground via conductor and the second ground via conductor. The output connection conductor includes the element connection conductor and an output via conductor connected to the drive connection wiring of the element connection conductor. The power connection wiring and the ground connection wiring are disposed on the resin layer. The semiconductor device according to appended note B7.

[0253] (Appended note C1) A step of forming a first resin layer that encapsulates a switching element, A step of forming a through hole in the first resin layer so that the switching element is exposed, A step of embedding a via conductor in the through hole, A step of mounting a driver that drives the switching element on the first resin layer so as to be electrically connected to the via conductor. A method for manufacturing a semiconductor device, which includes these steps.

[0254] (Appended note C2) A step of forming a second resin layer that encapsulates the driver on the first resin layer is provided. The manufacturing method of the semiconductor device described in Supplementary Note C1.

[0255] (Supplementary Note C3) In the step of mounting the driver, the driver is flip-chip mounted on the first resin layer. The manufacturing method of the semiconductor device described in Supplementary Note C1. (Appendix D1) a switching element, and a resin layer that seals at least the switching element, the semiconductor device having the height direction as the thickness direction of the resin layer, a driver that is displaced with respect to the switching element in the height direction of the semiconductor device and drives the switching element, a control via conductor that penetrates the resin layer in the height direction of the semiconductor device and electrically connects the switching element and the driver, is provided with a semiconductor device. (Appendix D2) The switching element has an element main surface on which a control pad electrode electrically connected to the control via conductor is formed, the driver has a driver main surface and a driver back surface facing opposite sides in the height direction of the semiconductor device, the driver main surface faces the same side as the element main surface, and a driver pad electrode electrically connected to the control via conductor is formed on the driver back surface. The semiconductor device according to Appendix D1. (Appendix D3) In the height direction of the semiconductor device, the control pad electrode and the driver pad electrode face each other, and the control pad electrode and the driver pad electrode are connected by the control via conductor. The semiconductor device according to Appendix D2. (Appendix D4) The resin layer has a first resin layer that seals the switching element and a second resin layer that is laminated on the first resin layer in the height direction of the semiconductor device and seals the driver, and the control via conductor is provided so as to connect the interface between the first resin layer and the second resin layer and the control pad electrode. The semiconductor device according to Appendix D3. (Appendix D5) The length of the control via conductor in the height direction of the semiconductor device is shorter than the distance between the driver and the second resin layer in the height direction of the semiconductor device. The semiconductor device according to Appendix D4. (Appendix D6) The switching element includes a first switching element and a second switching element, The control via conductor includes a first control via conductor connecting the first switching element and the driver, and a second control via conductor connecting the second switching element and the driver. The semiconductor device according to Supplementary Note D1. (Supplementary Note D7) The first switching element has a first element main surface on which a first control pad electrode electrically connected to the first control via conductor is formed. The second switching element has a second element main surface on which a second control pad electrode electrically connected to the second control via conductor is formed. The second element main surface faces the same side as the first element main surface. The driver has a driver main surface and a driver back surface facing opposite sides in the height direction of the semiconductor device. The driver main surface faces the same side as the first element main surface and the second element main surface. On the driver back surface, a first driver pad electrode electrically connected to the first control via conductor and a second driver pad electrode electrically connected to the second control via conductor are formed. The semiconductor device according to Supplementary Note D6. (Supplementary Note D8) In the height direction of the semiconductor device, the first control pad electrode and the first driver pad electrode face each other, and the second control pad electrode and the second driver pad electrode face each other. The first control pad electrode and the first driver pad electrode are connected by the first control via conductor. The second control pad electrode and the second driver pad electrode are connected by the second control via conductor. The semiconductor device according to Supplementary Note D7. (Supplementary Note D9) The resin layer has a first resin layer that seals both the first switching element and the second switching element, and a second resin layer that is laminated on the first resin layer in the height direction of the semiconductor device and seals the driver. The first control via conductor is provided so as to connect the interface between the first resin layer and the second resin layer and the first control pad electrode. The second control via conductor is provided so as to connect the interface between the first resin layer and the second resin layer and the second control pad electrode. The semiconductor device according to Supplementary Note D8. (Supplementary Note D10) The length of each of the first control via conductors and the length of each of the second control via conductors in the height direction of the semiconductor device are shorter than the distance between the driver and the second resin layer in the height direction of the semiconductor device. The semiconductor device according to Supplementary Note D9. (Supplementary Note D11) The first switching element has a first element main surface on which a first control pad electrode electrically connected to the first control via conductor is formed. The second switching element has a second element main surface on which a second control pad electrode electrically connected to the second control via conductor is formed. Each of the first element main surface of the first switching element and the second element main surface of the second switching element has a first drive pad electrode and a second drive pad electrode. It has an inter-element connection conductor that connects the second drive pad electrode of the first switching element and the first drive pad electrode of the second switching element. The inter-element connection conductor includes a first drive via conductor connected to the second drive pad electrode of the first switching element, a second drive via conductor connected to the first drive pad electrode of the second switching element, and a drive connection wiring that connects the first drive via conductor and the second drive via conductor. The semiconductor device according to any one of Supplementary Notes D6 to D10. (Supplementary Note D12) A plurality of each of the first drive via conductors and the second drive via conductors are provided. The semiconductor device according to Supplementary Note D11. (Supplementary Note D13) It includes a substrate on which the first switching element and the second switching element are mounted. The substrate has a power supply wiring electrically connected to the first drive pad electrode of the first switching element, a ground wiring electrically connected to the second drive pad electrode of the second switching element, and an output wiring electrically connected to both the second drive pad electrode of the first switching element and the first drive pad electrode of the second switching element. A power supply connection conductor that electrically connects the first drive pad electrode of the first switching element and the power supply wiring, a ground connection conductor that electrically connects the second drive pad electrode of the second switching element and the ground wiring, and an output connection conductor that electrically connects both the second drive pad electrode of the first switching element and the first drive pad electrode of the second switching element to the output wiring, are provided. The power supply connection conductor has a first power supply via conductor connected to the first drive pad electrode of the first switching element, a second power supply via conductor connected to the power supply wiring, and a power supply connection wiring that connects the first power supply via conductor and the second power supply via conductor. The ground connection conductor has a first ground via conductor connected to the second drive pad electrode of the second switching element, a second ground via conductor connected to the ground wiring, and a ground connection wiring that connects the first ground via conductor and the second ground via conductor. The output connection conductor has the element connection conductor and an output via conductor connected to the drive connection wiring of the element connection conductor. The semiconductor device according to Supplementary Note D11 or D12. (Supplementary Note D14) A plurality of each of the first power supply via conductor, the second power supply via conductor, the first ground via conductor, the second ground via conductor, and the output via conductor are provided. The semiconductor device according to Supplementary Note D13. (Supplementary Note D15) A substrate on which the first switching element and the second switching element are mounted is provided. The substrate has a power supply wiring electrically connected to the first drive pad electrode of the first switching element, a ground wiring electrically connected to the second drive pad electrode of the second switching element, and an output wiring electrically connected to both the second drive pad electrode of the first switching element and the first drive pad electrode of the second switching element. On the side of the substrate opposite to the side on which the first switching element and the second switching element are mounted, a power supply terminal electrically connected to the power supply wiring, a ground terminal electrically connected to the ground wiring, and an output terminal electrically connected to the output wiring are provided. The semiconductor device according to any one of Supplementary Notes D11 to D14. (Supplementary Note D16) The switching element includes a first switching element, a second switching element, a third switching element, and a fourth switching element. The driver includes a first driver that drives each of the first switching element and the second switching element, and a second driver that drives each of the third switching element and the fourth switching element. The semiconductor device according to any one of Supplementary Notes D1 to D4. (Supplementary Note D17) The switching element has a gallium nitride high electron mobility transistor (GaN HEMT). The semiconductor device according to any one of Supplementary Notes D1 to D16.

Description of Symbols

[0256] 10…Semiconductor device 20…Substrate 30…Switching element 30A…First switching element 30B…Second switching element 30C…Third switching element 30D…Fourth switching element 31…Main element surface 31A…First main element surface 31AA…First drive pad electrode 31AB…Second drive pad electrode 31AC…First control pad electrode 32A…First back surface of the element 31B…Second main element surface 31BA…First drive pad electrode 31BB…Second drive pad electrode 31BC…Second control pad electrode 32B…Second back surface of the element 31C…Third main element surface 31CA…First drive pad electrode 31CB…Second drive pad electrode 31CC…Third control pad electrode 31D…Fourth main element surface 31DA…First drive pad electrode 31DB…Second drive pad electrode 31DC…Fourth control pad electrode 33A…First drive pad electrode 33B…Second drive pad electrode 33C…Control pad electrode 40…Driver 40A…First driver 40B…Second driver 41…Driver main surface 42…Driver back surface 43, 43A, 43B…Driver pad electrode 50…Sealing resin (resin layer) 50A…First resin layer 50B…Second resin layer 57…Interface between the first resin layer and the second resin layer 61, 61A, 61B…Power supply wiring 62, 62A, 62B…Ground wiring 63, 63A, 63B…Output wiring 64, 64A, 64B…Control wiring 70…Exterior terminal 71…Power supply terminal 72…Ground terminal 73…Output terminal 81, 81A…First control via conductor (control via conductor) 82, 82A…Second control via conductor (control via conductor) 83, 83A, 83B…Power supply connection conductor 83a…First power supply via conductor 83b…Second power supply via conductor 83c…Power supply connection wiring 84, 84A, 84B…Ground connection conductor 84a…First ground via conductor 84b…Second ground via conductor 84c…Ground connection wiring 85, 85A, 85B…Output connection conductor 85a…Output via conductor 87, 87A, 87B…Element connection conductor 87a…First drive via conductor 87b…Second drive via conductor 87c…Drive connection wiring 90… Control-use via conductor 92… Output-use connection conductor 850A… First resin layer 850B… Second resin layer 857… Interface

Claims

1. A switching element, a resin layer that seals at least the switching element, and a semiconductor device having a height direction that is the thickness direction of the resin layer, wherein, in the height direction of the semiconductor device, a driver that is displaced with respect to the switching element and drives the switching element is arranged, a control via conductor that penetrates the resin layer in the height direction of the semiconductor device and electrically connects the switching element and the driver is provided, and the semiconductor device includes: the switching element has an element main surface on which a control pad electrode electrically connected to the control via conductor is formed, the driver has a driver main surface and a driver back surface that face opposite sides in the height direction of the semiconductor device, the driver main surface faces the same side as the element main surface, a driver pad electrode electrically connected to the control via conductor is formed on the driver back surface, in the height direction of the semiconductor device, the control pad electrode and the driver pad electrode face each other, the control pad electrode and the driver pad electrode are connected by the control via conductor, the resin layer has a first resin layer that seals the switching element and a second resin layer that is laminated on the first resin layer in the height direction of the semiconductor device and seals the driver, and the control via conductor is provided so as to connect the interface between the first resin layer and the second resin layer and the control pad electrode. Semiconductor device.

2. The length of the control via conductor in the height direction of the semiconductor device is shorter than the distance between the driver and the second resin layer in the height direction of the semiconductor device. The semiconductor device according to Claim 1.

3. A switching element, a resin layer that seals at least the switching element, and a semiconductor device having a height direction that is the thickness direction of the resin layer, wherein, in the height direction of the semiconductor device, a driver that is displaced with respect to the switching element and drives the switching element is arranged, a control via conductor that penetrates the resin layer in the height direction of the semiconductor device and electrically connects the switching element and the driver is provided, and the semiconductor device includes: the switching element includes a first switching element and a second switching element, The control via conductor includes a first control via conductor connecting the first switching element and the driver, and a second control via conductor connecting the second switching element and the driver. A semiconductor device.

4. The first switching element has a first element main surface on which a first control pad electrode electrically connected to the first control via conductor is formed. The second switching element has a second element main surface on which a second control pad electrode electrically connected to the second control via conductor is formed. The second element main surface faces the same side as the first element main surface. The driver has a driver main surface and a driver back surface facing opposite sides in the height direction of the semiconductor device. The driver main surface faces the same side as the first element main surface and the second element main surface. On the driver back surface, a first driver pad electrode electrically connected to the first control via conductor and a second driver pad electrode electrically connected to the second control via conductor are formed. The semiconductor device according to claim 3.

5. In the height direction of the semiconductor device, the first control pad electrode and the first driver pad electrode face each other, and the second control pad electrode and the second driver pad electrode face each other. The first control pad electrode and the first driver pad electrode are connected by the first control via conductor. The second control pad electrode and the second driver pad electrode are connected by the second control via conductor. The semiconductor device according to claim 4.

6. The resin layer has a first resin layer that seals both the first switching element and the second switching element, and a second resin layer that is laminated on the first resin layer in the height direction of the semiconductor device and seals the driver. The first control via conductor is provided so as to connect the interface between the first resin layer and the second resin layer and the first control pad electrode. The second control via conductor is provided so as to connect the interface between the first resin layer and the second resin layer and the second control pad electrode. The semiconductor device according to claim 5.

7. The length of each of the first control via conductor and the second control via conductor in the height direction of the semiconductor device is shorter than the distance between the driver and the second resin layer in the height direction of the semiconductor device. The semiconductor device according to claim 6.

8. The first switching element has a first main element surface on which a first control pad electrode electrically connected to the first control via conductor is formed. The second switching element has a second main element surface on which a second control pad electrode electrically connected to the second control via conductor is formed. Each of the first main element surface of the first switching element and the second main element surface of the second switching element has a first drive pad electrode and a second drive pad electrode. It has an inter-element connection conductor that connects the second drive pad electrode of the first switching element and the first drive pad electrode of the second switching element. The inter-element connection conductor includes a first drive via conductor connected to the second drive pad electrode of the first switching element, a second drive via conductor connected to the first drive pad electrode of the second switching element, and a drive connection wiring that connects the first drive via conductor and the second drive via conductor. The semiconductor device according to any one of claims 3 to 7.

9. A plurality of each of the first drive via conductor and the second drive via conductor are provided. The semiconductor device according to claim 8.

10. It includes a substrate on which the first switching element and the second switching element are mounted. The substrate has a power supply wiring electrically connected to the first drive pad electrode of the first switching element, a ground wiring electrically connected to the second drive pad electrode of the second switching element, and an output wiring electrically connected to both the second drive pad electrode of the first switching element and the first drive pad electrode of the second switching element. It includes a power supply connection conductor that electrically connects the first drive pad electrode of the first switching element and the power supply wiring, a ground connection conductor that electrically connects the second drive pad electrode of the second switching element and the ground wiring, and an output connection conductor that electrically connects both the second drive pad electrode of the first switching element and the first drive pad electrode of the second switching element and the output wiring. The power supply connection conductor includes a first power supply via conductor connected to the first drive pad electrode of the first switching element, a second power supply via conductor connected to the power supply wiring, and a power supply connection wiring connecting the first power supply via conductor and the second power supply via conductor. The ground connection conductor includes a first ground via conductor connected to the second drive pad electrode of the second switching element, a second ground via conductor connected to the ground wiring, and a ground connection wiring connecting the first ground via conductor and the second ground via conductor. The output connection conductor includes the element connection conductor and an output via conductor connected to the drive connection wiring of the element connection conductor. The semiconductor device according to claim 8 or 9.

11. A plurality of each of the first power supply via conductor, the second power supply via conductor, the first ground via conductor, the second ground via conductor, and the output via conductor are provided. The semiconductor device according to claim 10.

12. A substrate on which the first switching element and the second switching element are mounted is provided. The substrate includes a power supply wiring electrically connected to the first drive pad electrode of the first switching element, a ground wiring electrically connected to the second drive pad electrode of the second switching element, and an output wiring electrically connected to both the second drive pad electrode of the first switching element and the first drive pad electrode of the second switching element. On the side of the substrate opposite to the side on which the first switching element and the second switching element are mounted, a power supply terminal electrically connected to the power supply wiring, a ground terminal electrically connected to the ground wiring, and an output terminal electrically connected to the output wiring are provided. The semiconductor device according to any one of claims 8 to 11.

13. A switching element, At least a resin layer that seals the switching element, A semiconductor device including the resin layer with the thickness direction as the height direction, In the height direction of the semiconductor device, a driver that is arranged offset with respect to the switching element and drives the switching element. A control via-conductor that penetrates the resin layer in the height direction of the semiconductor device and electrically connects the switching element and the driver, comprises, The switching element includes a first switching element, a second switching element, a third switching element, and a fourth switching element, The driver includes a first driver that drives each of the first switching element and the second switching element, and a second driver that drives each of the third switching element and the fourth switching element. Semiconductor device.

14. The switching element has a gallium nitride high electron mobility transistor (GaN HEMT). The semiconductor device according to any one of claims 1 to 13.

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