Film forming apparatus

Abstract

Provided is a film formation device which controls plasma.　This film formation device is provided with: a reactive gas supply unit for supplying a reactive gas to a first chamber; a source gas supply unit for supplying a source gas to a second chamber; a first plasma mechanism for generating inductively coupled plasma which activates the reactive gas; a second plasma mechanism for generating capacitively coupled plasma which activates the reactive gas activated by the first plasma mechanism, and the source gas; and a control unit, wherein the second plasma mechanism includes: an upper electrode; a lower electrode which pairs with the upper electrode; a first high-frequency power source which applies a high-frequency wave to the upper electrode via a first matching device; a second high-frequency power source which applies a high-frequency wave to the upper electrode via a second matching device; and a third matching device which is connected to the lower electrode, the third matching device including a variable capacitor.

Description

Technical Field

[0001] The present disclosure relates to a film forming apparatus.

Background Art

[0002] For example, Patent Document 1 discloses a plasma processing apparatus including a lower electrode disposed in an airtight processing chamber and having a placement surface for placing an object to be processed, an upper electrode disposed in the processing chamber and facing the placement surface of the lower electrode, a high-frequency power source that generates an alternating electric field in the processing chamber to excite plasma, a matching circuit provided between the upper electrode and the high-frequency power source, a first filter connected between the lower electrode and the ground and having a circuit characteristic that can be freely changed, a sensor that detects the state of the plasma, and a control means that controls the circuit characteristic of the first filter based on a detection result output from the sensor.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a film forming apparatus for controlling plasma.

Means for Solving the Problems

[0005] According to one aspect of the present disclosure, a reaction gas supply unit that supplies a reaction gas to a first chamber, a raw material gas supply unit that supplies a raw material gas to a second chamber, a first plasma mechanism that generates inductively coupled plasma for activating the reaction gas, a second plasma mechanism that generates capacitively coupled plasma for activating the reaction gas activated by the first plasma mechanism and the raw material gas, and a control unit, wherein the second plasma mechanism includes an upper electrode, a lower electrode paired with the upper electrode, a first high-frequency power source that applies a high frequency to the upper electrode via a first matcher, a second high-frequency power source that applies a high frequency to the upper electrode via a second matcher, and a third matcher connected to the lower electrode, and the third matcher has a variable capacitor, and a film forming apparatus is provided.

Advantages of the Invention

[0006] According to one aspect, a film forming apparatus for controlling plasma can be provided.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4

Embodiments for Carrying Out the Invention

[0008] Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. In each drawing, the same reference numerals are assigned to the same components, and redundant descriptions may be omitted.

[0009] <First Embodiment> The film forming apparatus 10 according to the first embodiment will be described with reference to FIG. 1. FIG. 1 is a schematic cross-sectional view showing the film forming apparatus 10 according to the first embodiment.

[0010] The film forming apparatus 10 has a substantially cylindrical processing container 11, and accommodates a substrate W inside the processing container 11 (hereinafter, also referred to as "second chamber 10s"). The processing container 11 is grounded. An exhaust passage 61 is provided at the bottom of the processing container 11, and the exhaust device 60 connected to the exhaust passage 61 exhausts the gas inside the processing container 11.

[0011] Inside the processing container 11, a stage 12 for placing the substrate W is arranged. The stage 12 is made of an insulating ceramic such as AlN. The stage 12 is supported by a support member 12a made of an insulating ceramic that extends vertically from the bottom of the processing container 11. A heater 13 made of a high melting point metal such as molybdenum is embedded in the stage 12. The heater 13 heats the substrate W on the stage 12 to a predetermined temperature (for example, about 400°C to about 600°C) by being supplied with power from a heater power supply 14. Note that the stage 12 may be a conductor. A plurality of lift pins are inserted into the stage 12 so as to be able to protrude and retract with respect to its upper surface by a lifting mechanism, and the substrate W is transferred onto and from the stage 12 by the lifting operation of the plurality of lift pins.

[0012] A film-shaped electrode 15 is embedded inside the stage 12, and the electrode 15 is connected to a DC power supply 17 via a filter 16. When a DC voltage is applied from the DC power supply 17 to the electrode 15, an electrostatic attraction force is generated between the electrode 15 and the substrate W. Due to the electrostatic attraction force, the substrate W is held on the stage 12.

[0013] Further, the electrode 15 is grounded via a matcher (third matcher) 18. The matcher 18 includes a coil 181, a variable capacitor 182, and a variable capacitor 183. The variable capacitor 182 and the variable capacitor 183 are arranged in parallel. The coil 181 is arranged in series with the variable capacitors 182 and 183. A high-frequency sensor (third high-frequency sensor) 19 for detecting the current flowing through the matcher 18 (high-frequency current), the voltage applied to the matcher 18 (high-frequency voltage), and the self-bias voltage (Vdc) of the electrode 15 is provided in the matcher 18. The control unit 70 controls the variable capacitors 182 and 183 of the matcher 18 based on the detection result of the high-frequency sensor 19.

[0014] A shower head 21 is fitted to the top wall of the processing chamber 11 via an insulating member 20. The shower head 21 has a substantially disk shape and is formed of a conductive material. A first gas supply path 22 and a second gas supply path 23 are formed inside the shower head 21. The first gas supply path 22 and the second gas supply path 23 are separate gas paths. The first gas supply path 22 communicates with a plurality of first gas holes 22a, and the second gas supply path 23 communicates with a plurality of second gas holes 23a.

[0015] A heater (second heater) 24 made of a high melting point metal such as molybdenum is embedded in the shower head 21. The heater 24 is powered from a heater power supply 25 to heat the shower head 21 to a predetermined temperature (for example, about 150°C to about 350°C), and heats the gas flowing through the first gas supply path 22 formed in the shower head 21. Also, the gas flowing through the second gas supply path 23 formed in the shower head 21 is heated.

[0016] The film forming apparatus 10 includes a first plasma mechanism 30, a second plasma mechanism 40, a reaction gas supply unit 31, a raw material gas supply unit 51, and a control unit 70. The first plasma mechanism 30 generates inductively coupled plasma (ICP) inside an external container 32 installed outside a processing container 11 in which a substrate W is disposed (hereinafter, also referred to as a "first chamber 30s"). The first plasma mechanism 30 is an example of remote plasma that generates plasma of a reaction gas outside the processing container 11. The reaction gas supply unit 31 is connected to the external container 32 and supplies a reaction gas to the first chamber 30s. The reaction gas supply unit 31 includes a flow controller and an on-off valve, and supplies a reaction gas at a desired flow rate.

[0017] As the reaction gas, a gas that does not contain hydrogen atoms is used. Thereby, residual hydrogen in the film formed on the substrate W can be suppressed. For example, the reaction gas may contain at least any one of N2 gas, N2O gas, or O2 gas. In the first embodiment, an example in which N2 gas is used as the reaction gas will be described.

[0018] Inside the external container 32, a dielectric window 33 that airtightly seals the inside of the first chamber 30s is provided, and a coil-shaped RF antenna 34 is disposed outside the dielectric window 33 and inside the external container 32. The RF antenna 34 preferably has, for example, a form of a spiral coil or a concentric circle coil with a constant radius within one turn, and is fixed to the outer wall of the dielectric window 33 by an antenna fixing member made of an insulator.

[0019] One end of the RF antenna 34 is electrically connected to a high-frequency power supply 35 via a matcher 36. The other end of the RF antenna 34 is electrically connected to a ground potential via a ground wire.

[0020] The high-frequency power supply 35 outputs high-frequency power at a frequency suitable for plasma generation. The frequency of the high-frequency power supply 35 is preferably from 450 kHz to 40 MHz, for example, from 2.3 MHz to 2.5 MHz. The matcher 36 matches the impedance on the high-frequency power supply 35 side and the impedance on the load side, and functions such that the output impedance of the high-frequency power supply 35 and the load impedance appear to be the same when plasma is being generated in the first chamber 30s.

[0021] For example, when using N2 gas as the reaction gas, the first plasma mechanism 30 requires energy of 12 eV or more to dissociate the N2 gas. Therefore, the first plasma mechanism 30 generates an inductively coupled plasma 30p having energy for dissociating the reaction gas. That is, the high-frequency electric field formed through the dielectric window 33 by the high-frequency power applied via the RF antenna 34 sufficiently dissociates and activates the N2 gas in the first chamber 30s, thereby generating a plasma (active species) of the N2 gas. However, the first plasma mechanism 30 is not limited to forming an inductively coupled plasma. For example, the first plasma mechanism 30 may be a mechanism that generates a microwave plasma having energy for dissociating the reaction gas.

[0022] A gas inlet 26 is formed at the upper center of the shower head 21, and the gas inlet 26 is connected to the outer container 32. The plasma of the N2 gas activated in the first chamber 30s passes through the gas line 30a, the gas inlet 26, and the first gas supply path 22, and is shower-supplied from a plurality of first gas holes 22a to the second chamber 10s.

[0023] The second plasma mechanism 40 generates a capacitively coupled plasma (CCP) 10p in the first chamber 30s inside the processing container 11. However, the second plasma mechanism 40 is not limited to generating a capacitively coupled plasma, and may generate an inductively coupled plasma. The second plasma mechanism 40 activates the source gas. Also, the second plasma mechanism 40 re-activates the N2 gas activated by the first plasma mechanism 30.

[0024] The raw material gas supply unit 51 supplies the raw material gas to the second chamber 10s. For example, the raw material gas may contain at least any one of silane (SiH4) gas, disilane (Si2H6) gas, dichlorosilane (H2SiCl2) gas, or tetraethoxysilane (TEOS: Si(OC2H5)4) gas. In addition, it is preferable that the proportion of hydrogen in the molecule of the raw material gas is small. For example, compared with silane gas, disilane gas and dichlorosilane gas have a smaller proportion of hydrogen in the molecule, so they are preferable as the raw material gas. In the first embodiment, an example of using silane gas as the raw material gas will be described.

[0025] A gas inlet 27 is formed at the outer edge of the upper part of the shower head 21, and the gas inlet 27 is connected to the raw material gas supply unit 51 via a gas line 50a. The silane gas passes through the gas line 50a, the gas inlet 27 and the second gas supply path 23, and is supplied in a shower form to the second chamber 10s through a plurality of second gas holes 23a.

[0026] A high-frequency power supply (first high-frequency power supply) 41 is electrically connected to the shower head 21 via a matcher (first matcher) 42. The high-frequency power supply 41 outputs high-frequency power with a frequency suitable for plasma generation. The frequency of the high-frequency power supply 41 is preferably 10 MHz to 40 MHz, for example, 27.12 MHz. The matcher 42 matches the impedance between the high-frequency power supply 41 side and the load side, and functions so that the output impedance of the high-frequency power supply 41 and the load impedance seemingly match when plasma is generated in the second chamber 10s.

[0027] Specifically, the matcher 42 of the high-frequency power supply 41 includes a variable capacitor 421, a coil 422, and a variable capacitor 423. The variable capacitor 421, the coil 422, and the variable capacitor 423 are arranged in series. Further, a high-frequency sensor (first high-frequency sensor) 43 for detecting a reflected wave from the load side is provided in the matcher 42. The control unit 70 controls the variable capacitors 421 and 423 of the matcher 42 so that the impedance is matched based on the detection result of the high-frequency sensor 43.

[0028] In the second plasma mechanism 40, by applying high-frequency power to the high-frequency power supply 41, a high-frequency electric field is formed between the shower head 21 and the stage 12. The formed high-frequency electric field sufficiently dissociates and activates the silane gas in the second chamber 10s, thereby generating a plasma of the silane gas.

[0029] While transporting the plasma of the N2 gas activated in the first chamber 30s from the first chamber 30s to the second chamber 10s, the dissociated N atoms, ions, and radicals recombine or deactivate, weakening the activation state of the plasma. In contrast, the high-frequency electric field formed between the shower head 21 and the stage 12 can redissociate the recombined N2 gas in the second chamber 10s, thereby reactivating the plasma of the N2 gas.

[0030] Further, a high-frequency power supply (second high-frequency power supply) 44 is electrically connected to the shower head 21 via a matcher (second matcher) 45. The high-frequency power supply 44 outputs high-frequency power for attracting ions to the stage 12. The frequency of the high-frequency power supply 44 is preferably 300 kHz to 500 kHz, for example, 400 kHz. The matcher 45 matches the impedance between the high-frequency power supply 44 side and the load side, and functions so that the output impedance of the high-frequency power supply 44 and the load impedance apparently match when a plasma is generated in the second chamber 10s.

[0031] Specifically, the matcher 45 of the high-frequency power supply 44 includes a variable capacitor 451, a coil 452, and a variable capacitor 453. The variable capacitor 451, the coil 452, and the variable capacitor 453 are arranged in series. Further, a high-frequency sensor (second high-frequency sensor) 46 for detecting a reflected wave from the load side is provided in the matcher 45. The control unit 70 controls the variable capacitors 451 and 453 of the matcher 45 so that the impedance is matched based on the detection result of the high-frequency sensor 46.

[0032] The film forming apparatus 10 has a control unit 70 including, for example, a microcomputer. The control unit 70 controls the individual operations of each part of the film forming apparatus 10, such as the high-frequency power supplies 35, 41, and 44, the matchers 36, 42, and 45, the first plasma mechanism 30, the second plasma mechanism 40, the reaction gas supply unit 31, the raw material gas supply unit 51, etc., and the operation of the entire apparatus.

[0033] The control unit 70 performs the following controls during film formation. First, the control unit 70 controls to accommodate the substrate W in the second chamber 10s. Next, the control unit 70 controls the reaction gas supply unit 31 and the first plasma mechanism 30 to activate a reaction gas not containing hydrogen atoms, and further controls the second plasma mechanism 40 to activate the reaction gas again and supply it to the substrate W.

[0034] In addition, the control unit 70 controls the raw material gas supply unit 51 and the second plasma mechanism 40 to activate the raw material gas and supply it to the substrate. At this time, the control unit 70 may supply the raw material gas and the reaction gas to the substrate W simultaneously. Thereby, the control unit 70 causes the raw material gas and the reaction gas to react to form a film on the substrate W. By such control, a silicon nitride film of SiN can be formed on the substrate W by CVD (chemical vapor deposition method). An oxide film of SiOx or an oxynitride film of SiON may be formed by changing the raw material gas and the reaction gas.

[0035] When using N2 gas as the reaction gas, the first plasma mechanism 30 has a high-frequency power supply 35, a matcher 36, an RF antenna 34, and a dielectric window 33, and activates the N2 gas in the first chamber 30s within the external container 32. When using silane gas as the source gas, the second plasma mechanism 40 has a high-frequency power supply 41 and a matcher 42, and activates the silane gas in the second chamber 10s within the processing container 11. Further, the second plasma mechanism 40 re-activates the N2 gas whose activation has weakened during transportation from the first chamber 30s to the second chamber 10s.

[0036] N2 gas can be dissociated by energy greater than about 10 eV. On the other hand, when using silane gas as the source gas, silane gas can be dissociated by energy greater than about 4 eV.

[0037] The electron temperature of the inductively coupled plasma of the first embodiment is about 12 eV or higher. Therefore, the first plasma mechanism 30 can dissociate N2 gas by the collision between the electrons of the inductively coupled plasma and N2 gas by generating the inductively coupled plasma. Thereby, plasma of the N2 gas activated in the first chamber 30s is generated.

[0038] In contrast, the electron temperature of the capacitively coupled plasma of the first embodiment is in the range of about 7 eV to 8 eV. Therefore, the second plasma mechanism 40 can dissociate silane gas by the collision between the electrons of the capacitively coupled plasma and silane gas by generating the capacitively coupled plasma. Thereby, plasma of the silane gas activated in the second chamber 10s is generated.

[0039] That is, in the first embodiment, N2 gas is first supplied to the first chamber 30s, activated by using inductively coupled plasma within the first chamber 30s by the first plasma mechanism 30, and then transported to the second chamber 10s. On the other hand, silane gas is directly supplied to the second chamber 10s and activated by using capacitively coupled plasma within the second chamber 10s by the second plasma mechanism 40.

[0040] Since the first chamber 30s is provided outside the processing vessel 11, part of the activated N2 gas plasma is deactivated or molecular recombination occurs during transportation to the second chamber 10s.

[0041] Therefore, the second plasma mechanism 40 dissociates the plasma of N2 gas with weakened activation and the recombined N2 molecules within the second chamber 10s. Since the N2 gas has been dissociated once in the first chamber 30s, it is considered that N atoms and the like are in a dissociable state with a high energy level. Thus, the energy required to dissociate the plasma of N2 gas with weakened activity and the recombined N2 molecules when transported to the second chamber 10s may be lower than the energy required to dissociate the N2 gas in the first chamber 30s. That is, even a capacitively coupled plasma with a lower electron temperature and lower energy than an inductively coupled plasma can sufficiently dissociate the plasma of N2 gas with weakened activation and the recombined N2 molecules.

[0042] For this reason, in the first embodiment, the N2 gas is dissociated in two stages. In the first stage, the N2 gas is dissociated by the energy of the inductively coupled plasma in the first chamber 30s, and in the second stage, the N2 gas is redissociated by the energy of the capacitively coupled plasma in the second chamber 10s. Note that in the second stage, the N2 gas may be redissociated by the energy of the inductively coupled plasma in the second chamber 10s. However, in the second stage, using a capacitively coupled plasma with lower energy than the inductively coupled plasma results in better film thickness uniformity and easier control of film quality.

[0043] When N2 gas and silane gas pass through the same gas path in the shower head 21, N ions and N radicals react with the silane gas during transportation and are consumed. It is preferable that these gases be supplied into the second chamber 10s while maintaining an activated state. It is preferable to prevent them from being consumed as much as possible before being transported to the second chamber 10s. Therefore, in the first embodiment, the first gas supply path 22 and the second gas supply path 23 in the shower head 21 are made into separate gas paths. As a result, it is possible to make it difficult for the activated N2 gas and silane gas to be consumed before being supplied into the second chamber 10s.

[0044] FIG. 2 is a schematic diagram for explaining the control of the capacitively coupled plasma 10p generated in the second chamber.

[0045] When applying high-frequency power from the high-frequency power supplies 41 and 44 to the upper electrode (shower head 21), the matching units 42 and 45 perform impedance matching with respect to the process atmosphere (the state of the capacitively coupled plasma 10p) in the second chamber 10s. That is, based on the detection results of the high-frequency sensors 43, the control unit 70 controls the variable capacitors 421 and 423 (see FIG. 1) of the matching unit 42 so that the output impedance of the high-frequency power supply 41 and the load impedance of the capacitively coupled plasma 10p apparently match. Also, based on the detection results of the high-frequency sensor 46, the control unit 70 controls the variable capacitors 451 and 453 (see FIG. 1) of the matching unit 45 so that the output impedance of the high-frequency power supply 44 and the load impedance of the capacitively coupled plasma 10p apparently match.

[0046] Also, the lower electrode (electrode 15 of the stage 12) is grounded via the matching unit 18. Here, based on the detection results of the high-frequency sensor 19, the control unit 70 controls the variable capacitors 182 and 183 of the matching unit 18. Specifically, the control unit 70 controls the variable capacitors 182 and 183 to control the self-bias voltage (Vdc) of the electrode 15. By controlling the self-bias voltage (Vdc), the height position of the capacitively coupled plasma 10p generated between the upper electrode (shower head 21) and the lower electrode (electrode 15 of the stage 12) in the second chamber 10s is controlled.

[0047] That is, as shown in FIG. 2, let the RF input input from the high-frequency power supplies 41 and 44 be x, and let the RF output matched by the matching units 42 and 45 be x'. Let the process atmosphere (in the state of the capacitively coupled plasma 10p) in the second chamber 10s be represented by the function f(x).

[0048] Also, let the output controlled by the matching unit 18 be a. Here, the output a is the height position of the capacitively coupled plasma 10p.

[0049] Also, by controlling the variable capacitors 182 and 183 of the matching unit 18, the process atmosphere in the second chamber 10s changes. When the process atmosphere in the second chamber 10s changes, the control unit 70 performs impedance matching of the matching units 42 and 45 again corresponding to the changed process atmosphere. In other words, the control of the matching unit 18 is fed back b to the matching units 42 and 45 through the process atmosphere in the second chamber 10s.

[0050] As described above, according to the film forming apparatus according to the first embodiment, by controlling the input-side matching units 42 and 45 with respect to the process atmosphere and the output-side matching unit 18 with respect to the process atmosphere, the capacitively coupled plasma 10p can be controlled. In other words, the film forming apparatus according to the first embodiment can control the capacitively coupled plasma 10p by configuring a feedback loop as shown in FIG. 2 for an uncalculable process atmosphere.

[0051] Thereby, the height position of the capacitively coupled plasma 10p generated between the upper electrode (shower head 21) and the lower electrode (electrode 15 of the stage 12) in the second chamber 10s can be controlled.

[0052] In addition, the upper electrode (shower head 21) is supplied with high-frequency power of two frequencies having different frequencies from the high-frequency power supply 41 and the high-frequency power supply 44. On the other hand, the matching unit 18 has variable capacitors 182 and 183 in parallel, and forms a first LC series circuit with the coil 181 and the variable capacitor 182, and forms a second LC series circuit with the coil 181 and the variable capacitor 183. Thereby, the impedance can be controlled corresponding to each of the high-frequency powers of the two frequencies.

[0053] <Second Embodiment> Next, the film forming apparatus 10 according to the second embodiment will be described with reference to FIG. 3. FIG. 3 is a schematic cross-sectional view showing the film forming apparatus 10 according to the second embodiment. The film forming apparatus 10 according to the second embodiment is different from the film forming apparatus 10 according to the first embodiment in that a heater block 37 is provided in the gas line 30a. Other configurations are the same, and redundant descriptions are omitted.

[0054] The heater block 37 is disposed so as to cover the gas line 30a that connects the outer container 32 and the shower head 21. A heater (first heater) 38 made of a high melting point metal such as molybdenum is embedded in the heater block 37. The heater 38 is supplied with power from the heater power supply 39 to heat the heater block 37 to a predetermined temperature (for example, about 120° C.), and heats the gas flowing through the gas line 30a passing through the heater block 37.

[0055] FIG. 4 is an example of a graph showing the relationship between the temperature of the shower head 21 and the film formation rate (D / R) and the film stress (Stress) of the film formed on the substrate W. FIG. 4(a) shows the result when the temperature of the heater block 37 is controlled to be 120° C. in the film forming apparatus 10 according to the second embodiment. FIG. 4(b) shows the result in the film forming apparatus according to the reference example. Note that the film forming apparatus according to the reference example is different from the film forming apparatus 10 according to the second embodiment in that the heater block 37 is not provided. Other configurations are the same, and redundant descriptions are omitted.

[0056] Here, as shown in FIG. 4(b), in the film forming apparatus according to the reference example, as the temperature of the shower head 21 increases, the film forming rate of the film formed on the substrate W improves (see the dashed arrow). Further, as the temperature of the shower head 21 increases, the film stress of the film formed on the substrate W decreases (see the solid arrow).

[0057] On the other hand, as shown in FIG. 4(a), in the film forming apparatus 10 according to the second embodiment, as the temperature of the shower head 21 increases, the film forming rate of the film formed on the substrate W improves. Further, by heating the gas with the heater block 37, the film stress can be reduced. Specifically, the film stress can be reduced when the temperature of the shower head 21 is in the range of 150°C to 350°C. Thereby, for example, warping of the substrate W can be suppressed.

[0058] The film forming apparatus according to the embodiment disclosed this time should be considered as illustrative in all respects and not restrictive. The above embodiments can be modified and improved in various forms without departing from the scope and gist of the appended claims. The matters described in the above plurality of embodiments can also adopt other configurations within a non - conflicting range and can be combined within a non - conflicting range.

Description of Reference Numerals

[0059] 10 Film forming apparatus 10s Second chamber 10p Capacitively coupled plasma 11 Processing container 12 Stage (lower electrode) 12a Support member 13 Heater 14 Heater power supply 15 Electrode (lower electrode) 16 Filter 17 DC power supply 18 Matching unit (third matching unit) 181 Coil 182, 183 Variable capacitor 19 High - frequency sensor (third high - frequency sensor) 20 Insulating member 21 Shower head (upper electrode) 22 First gas supply path 23 Second gas supply path 22a First gas hole 23a Second gas hole 24 Heater (second heater) 25 Heater power supply 26 Gas inlet 27 Gas inlet 30 First plasma mechanism 30a Gas line 30s First chamber 30p Inductively coupled plasma 31 Reaction gas supply section 32 Outer container 33 Dielectric window 34 RF antenna 35 High-frequency power supply 36 Matching unit 37 Heater block 38 Heater (first heater) 39 Heater power supply 40 Second plasma mechanism 41 High-frequency power supply (first high-frequency power supply) 42 Matching unit (first matching unit) 421 Variable capacitor 422 Coil 423 Variable capacitor 43 High-frequency sensor (first high-frequency sensor) 44 High-frequency power supply (second high-frequency power supply) 45 Matching unit (second matching unit) 451 Variable capacitor 452 Coil 453 Variable capacitor 46 High-frequency sensor (second high-frequency sensor) 51 Source gas supply section 50a Gas line 60 Exhaust device 61 Exhaust path 70 Control unit W Substrate

Claims

1. A reaction gas supply unit that supplies a reaction gas to a first chamber, A raw material gas supply unit that supplies a raw material gas to a second chamber, A first plasma mechanism that generates inductively coupled plasma for activating the reaction gas, A second plasma mechanism that generates capacitively coupled plasma for activating the reaction gas activated by the first plasma mechanism and the raw material gas, A control unit, comprising: The second plasma mechanism includes: An upper electrode, A lower electrode paired with the upper electrode, A first high-frequency power source that applies a high frequency to the upper electrode via a first matcher, A second high-frequency power source that applies a high frequency to the upper electrode via a second matcher, A third matcher connected to the lower electrode, The third matcher has a variable capacitor, A film forming apparatus.

2. The third matcher includes: A first variable capacitor and a second variable capacitor arranged in parallel, A coil arranged in series with the first variable capacitor and the second variable capacitor, The film forming apparatus according to Claim 1.

3. The first matcher has a first high-frequency sensor, The control unit controls the variable capacitor of the first matcher based on the detection result of the first high-frequency sensor, The second matcher has a second high-frequency sensor, The control unit controls the variable capacitor of the second matcher based on the detection result of the second high-frequency sensor, The film forming apparatus according to Claim 1 or Claim 2.

4. The third matcher has a third high-frequency sensor, The control unit controls the variable capacitor of the third matcher based on the detection result of the third high-frequency sensor, The film forming apparatus according to Claim 3.

5. The control unit: Controls the variable capacitor of the third matcher, and after the state of the capacitively coupled plasma in the second plasma mechanism changes, Based on the detection result of the first high-frequency sensor, controls the variable capacitor of the first matcher again, Based on the detection result of the second high-frequency sensor, controls the variable capacitor of the second matcher again, The film forming apparatus according to Claim 4.

6. A first heater provided in a gas flow path connecting from the first plasma mechanism to a shower head of the second plasma mechanism, A second heater provided on the shower head, The film forming apparatus according to Claim 1 or Claim 2.

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