Electro-optical device and electronic apparatus

Abstract

To suppress generation of abnormal light emission.SOLUTION: An electro-optic device includes: light-emitting regions G1 and G2 where a pixel electrode 131G and a light-emitting layer are in contact in a region where the pixel electrode 131G and the light-emitting layer overlap in a plan view, a pixel contact region Ct_Px_G where the pixel electrode 131G and a relay layer overlap in a plan view, and a dummy contact region Ct_Dm_G where the pixel electrode 131G, a dummy relay layer, and a common electrode overlap. In a substrate thickness direction, the distance between a reflection layer and the pixel electrode 131G in the dummy contact region Ct_Dm_G is longer than the distance between the reflection layer and the pixel electrode 131 in the pixel contact region Ct_Px_G. In a plan view, a colored layer Cf_G is provided in a part overlapping with the dummy contact region Ct_Dm_G.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The present invention relates to an electro-optical device and an electronic device.

Background Art

[0002] An electro-optical device using, for example, an OLED as a light-emitting element is known. OLED is an abbreviation for Organic Light Emitting Diode. In this electro-optical device, a pixel portion including a transistor or the like for passing a current through the light-emitting element is provided on a substrate such as a semiconductor corresponding to each pixel of an image to be displayed. The OLED has a configuration in which a light-emitting layer is sandwiched between a pixel electrode and a common electrode, and emits light with a luminance corresponding to the current flowing through the light-emitting layer. In this configuration, in the pixel contact region, the pixel electrode is connected to the lower wiring, and the lower wiring is electrically connected to the transistor.

[0003] Further, for example, in a configuration in which pixel portions are provided for each of three colors of R (red), G (green), and B (blue), Patent Document 1 proposes a technique for adjusting the optical distance between a pixel electrode and a reflective layer for each pixel portion (color). In the technique described in Patent Document 1, among the three colors, in the pixel portion of R having a long wavelength, the upper surface position (observation side position) in the light-emitting layer is the highest compared to the other two colors in the light-emitting region and the pixel contact region.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In the manufacturing process of an electro-optical device, if pushing occurs toward the substrate for some reason, the light-emitting layer becomes thinner due to the pushing, and as a result, the resistance of the light-emitting layer decreases, causing abnormal light emission not assumed in the design.

Means for Solving the Problem

[0006] An electro-optical device according to an aspect of the present disclosure includes a substrate, a first light-emitting element including a common electrode, a first pixel electrode, and a light-emitting layer, a first reflective layer provided between the substrate and the first pixel electrode, and a first relay layer that electrically connects the first reflective layer and the first pixel electrode. The first light-emitting element includes, in a region where the first pixel electrode and the light-emitting layer overlap in plan view, a first light-emitting region where the first pixel electrode and the light-emitting layer are in contact, a first pixel contact region where the first pixel electrode and the first relay layer overlap in plan view, and a non-contact region that is outside the first light-emitting region in plan view and is different from the first pixel contact region. In the thickness direction of the substrate, the distance between the first reflective layer and the first pixel electrode in the non-contact region is longer than the distance between the first reflective layer and the first pixel electrode in the first pixel contact region, and it is provided so as to overlap the non-contact region in plan view, and has a first colored layer that shields light emitted from the non-contact region.

Brief Description of the Drawings

[0007]

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Mode for Carrying Out the Invention

[0008] Hereinafter, an electro-optical device according to an embodiment of the present invention will be described with reference to the drawings. In each figure, the dimensions and scales of each part are appropriately different from the actual ones. In addition, the embodiments described below are preferred specific examples, so various technically preferable limitations are imposed. However, the scope of the present invention is not limited to these embodiments unless otherwise specified in the following description.

[0009] <First Embodiment> FIG. 1 is a block diagram showing the configuration of an electro-optical device 10 according to the first embodiment. This electro-optical device 10 is a microdisplay panel that displays a color image, for example, in a head-mounted display or the like. A plurality of pixel portions, a drive circuit that drives the pixel portions, and structures are formed on a semiconductor substrate. In this embodiment, a silicon substrate is used as the semiconductor substrate, but other semiconductor substrates may also be used.

[0010] As shown in FIG. 1, the electro-optical device 10 is roughly divided into a control circuit 30, a data signal output circuit 50, a display area 100, and a scanning line drive circuit 120. In the display area 100, m scanning lines 12 are provided along the X direction in the figure, and (3n) data lines 14 are provided along the Y direction and electrically insulated from each of the scanning lines 12. Note that m and n are integers of 2 or more.

[0011] In the display area 100, pixel portions 110 are provided corresponding to the intersections of the m scanning lines 12 and the (3n) data lines 14. For this reason, the pixel portions 110 are arranged in a matrix of m rows in the vertical direction and (3n) columns in the horizontal direction. Among the matrix arrangements, in order to distinguish the rows, they may be referred to as the 1st, 2nd, 3rd,..., (m - 1)th, and mth rows in order from the top in the figure. Similarly, in order to distinguish the columns of the matrix, they may be referred to as the 1st, 2nd, 3rd,..., (3n - 2)th, (3n - 1)th, and (3n)th columns in order from the left in the figure. Note that, in order to generally describe the scanning lines 12, an integer i of 1 or more and m or less is used. Similarly, in order to generally describe the data lines 14, an integer j of 1 or more and (3n) or less is used.

[0012] The control circuit 30 controls each part based on video data Vid and a synchronization signal Sync supplied from a host device (not shown). Specifically, the control circuit 30 generates various control signals to control each part. The video data Vid specifies the gradation levels of the pixels in the image to be displayed, for example, with 8 bits. The synchronization signal Sync includes a vertical synchronization signal that indicates the start of the vertical scan of the video data Vid, a horizontal synchronization signal that indicates the start of the horizontal scan, and a dot clock signal that indicates the timing for one pixel of the video data.

[0013] In this embodiment, the pixels of the image to be displayed correspond one-to-one with the pixel portions 110 in the display area 100. The luminance characteristics at the gradation levels indicated by the video data Vid supplied from the host device do not necessarily match the luminance characteristics of the OLEDs included in the pixel portions 110. Therefore, in order to cause the OLEDs to emit light with a luminance corresponding to the gradation levels indicated by the video data Vid, the control circuit 30 up-converts the 8 bits of the video data Vid to, for example, 10 bits and outputs it as video data Vdata. For this reason, the 10-bit video data Vdata becomes data corresponding to the gradation levels specified by the video data Vid. Note that for the up-conversion, a look-up table that stores in advance the correspondence between the 8 bits of the input video data Vid and the 10 bits of the output video data Vdata is used.

[0014] The scan line drive circuit 120 is a circuit for driving the pixel portions 110 arranged in m rows (3n columns) one row at a time according to the control by the control circuit 30. For example, the scan line drive circuit 120 sequentially supplies scan signals / Gwr(1), / Gwr(2),..., / Gwr(m - 1), / Gwr(m) to the scan lines 12 of the first, second, third,..., (m - 1)th, and mth rows. Generally, the scan signal supplied to the scan line 12 of the ith row is denoted as / Gwr(i).

[0015] The data signal output circuit 50 is a circuit that outputs a data signal to the pixel portion 110 located in the row selected by the scanning line driving circuit 120 via the data line 14 in accordance with the control by the control circuit 30. The data signal is a voltage signal obtained by analog-converting 10-bit video data Vdata. That is, the data signal output circuit 50 analog-converts one row of video data Vdata corresponding to the pixel portion 110 in columns 1 to (3n) in the selected row, and outputs it to the data lines 14 in columns 1 to (3n) in this order.

[0016] In the figure, the data signals output to the data lines 14 in columns 1, 2, 3, …, (3n−2), (3n−1), and (3n) are denoted as Vd(1), Vd(2), Vd(3), …, Vd(3n−2), Vd(3n−1), and Vd(3n) in order. Generally, the potential of the data line 14 in the j-th column is denoted as Vd(j). Also, the two-dimensional plane determined by the X direction and the Y direction is the substrate surface of the semiconductor substrate. The Z direction is perpendicular to the X direction and the Y direction, and is the emission direction of light emitted from the OLED. Note that in this description, a plan view means looking at the semiconductor substrate from the direction opposite to the Z direction.

[0017] In the display area 100, as shown in FIG. 2, electrically, the pixel portions 110 of R, the pixel portions 110 of B, and the pixel portions 110 of G are arranged along the X direction, and the pixel portions 110 of the same color are arranged along the Y direction. Therefore, looking at any one column of the data lines 14, the pixel portions 110 of the same color will correspond. Note that one color is expressed by additive color mixing of the adjacent RB pixel portions 110 in the X direction. For this reason, strictly speaking, the pixel portion 110 should be called a sub-pixel portion, but for convenience of explanation, it is denoted as a pixel portion. G RB

[0018] ​​​​​​Note that the arrangement of the pixel portions 110 shown in FIG. 1 is only in terms of electrical view. Actually, as shown in FIG. 4 to be described later, the pixel portions 110 for R and the pixel portions 110 for B are arranged in the same column. If the data line 14 connected to the pixel portion 110 for R is located on the left and the data line 14 connected to the pixel portion 110 for B is located on the right, the arrangement of the pixel portions 110 in terms of electrical view can be regarded as the same as that in FIG. 1.

[0019] FIG. 2 is a diagram showing the electrical configuration of the pixel portion 110 in the electro-optical device 10. The pixel portions 110 arranged in 1080 rows (3n) and columns are identical to each other in terms of electrical view. Therefore, the pixel portion 110 will be described by being represented by one pixel portion 110 corresponding to the j-th column in the i-th row.

[0020] As shown in the figure, the pixel portion 110 includes, in terms of electrical view, P-channel MOS type transistors 121 and 122, an OLED 130, and a capacitive element 140. Note that in the description of the pixel portion 110, the phrase "in terms of electrical view" is used when referring to a plurality of elements constituting the pixel portion 110 and the connection relationship between the plurality of elements. Since the pixel portion 110 includes elements that do not contribute to the electrical connection relationship in terms of mechanical or physical view, such an expression is used.

[0021] The OLED 130 is an example of a light-emitting element, and sandwiches a light-emitting layer 132 between a pixel electrode 131 and a common electrode 133. The pixel electrode 131 functions as an anode, and the common electrode 133 functions as a cathode. Note that the details of the OLED 130 will be described later. When current flows from the anode to the cathode, holes injected from the anode and electrons injected from the cathode recombine in the light-emitting layer 132 to generate excitons, and white light is generated. The generated white light resonates in an optical resonator composed of a reflective layer and a semi-reflective and semi-transmissive layer (omitted in FIG. 2), and is emitted at a resonance wavelength set corresponding to any one of R (red), G (green), and B (blue). A color filter corresponding to the color is provided on the light emission side of the optical resonator. Therefore, the light emitted from the OLED 130 is visually recognized by the observer after being colored by the optical resonator and the color filter.

[0022] In the transistor 121 of the pixel portion 110 at the i-th row and j-th column, the gate node g is connected to the drain node of the transistor 122, the source node is connected to the power supply line 116 of the voltage Vel, and the drain node is connected to the pixel electrode 131 which is the anode of the OLED 130. In the transistor 122 of the pixel portion 110 at the i-th row and j-th column, the gate node is connected to the scanning line 12 of the i-th row, and the source node is connected to the data line 14 of the j-th column. The common electrode 133 functioning as the cathode of the OLED 130 is connected to the power supply line 118 of the voltage Vct. Further, since the electro-optical device 10 is formed on a silicon substrate, the substrate potential of the transistors 121 and 122 is, for example, a potential corresponding to the voltage Vel.

[0023] The pixel portion 110 shown in FIG. 2 is common for each of RGB electrically, and thus has been described generally without specifying the color. Next, however, it is different for each color structurally. Therefore, when describing by distinguishing by color, it is denoted as pixel portions 110R, 110G, and 110B. Similarly, for the OLED 130 and the pixel electrode 131, when describing by distinguishing by color, they are denoted as OLEDs 130R, 130G, and 130B, and the pixel electrodes 131R, 131G, and 131B.

[0024] FIG. 3 is a timing chart for explaining the operation of the electro-optical device 10. In the electro-optical device 10, the scanning lines 12 of m rows are scanned one by one in the order of the 1st, 2nd, 3rd, …, mth rows during the period of one frame (V). Specifically, as shown in the figure, the scanning signals / Gwr(1), / Gwr(2), …, / Gwr(m-1), / Gwr(m) are sequentially and exclusively set to the L level by the scanning line driving circuit 120 for each horizontal scanning period (H). In this embodiment, among the scanning signals / Gwr(1) to / Gwr(m), the periods during which adjacent scanning signals become the L level are temporally isolated. Specifically, after the scanning signal / Gwr(i-1) changes from the L level to the H level, the next scanning signal / Gwr(i) becomes the L level after a certain period. This period corresponds to the horizontal blanking period.

[0025] In this description, the period of one frame (V) refers to the period required to display one frame of the image specified by the video data Vid. If the length of the period of one frame (V) is the same as the vertical synchronization period, for example, if the frequency of the vertical synchronization signal included in the synchronization signal Sync is 60 Hz, it is 16.7 milliseconds corresponding to one cycle of the vertical synchronization signal. Also, the horizontal scanning period (H) is the time interval during which the scanning signals / Gwr(1) to / Gwr(m) sequentially become the L level. In the figure, for convenience, the start timing of the horizontal scanning period (H) is set approximately at the center of the horizontal blanking period.

[0026] Among the scanning signals / Gwr(1) to / Gwr(m), when a certain scanning signal, for example, the scanning signal / Gwr(i) supplied to the scanning line 12 of the ith row becomes the L level, in the jth column, the transistor 122 in the pixel portion 110 of the ith row and jth column is turned on. Therefore, the gate node g of the transistor 121 in the pixel portion 110 is electrically connected to the data line 14 of the jth column.

[0027] In addition, in this description, the "on state" of a transistor means that the source node and the drain node of the transistor are electrically closed and in a low impedance state. Also, the "off state" of a transistor means that the source node and the drain node are electrically open and in a high impedance state. In addition, in this description, "electrically connected" or simply "connected" means a state where two or more elements are directly or indirectly connected or coupled. "Electrically disconnected" or simply "disconnected" means a state where two or more elements are not directly or indirectly connected or coupled.

[0028] During the horizontal scanning period (H) when the scanning signal / Gwr(i) is at the L level, the data signal output circuit 50 converts the gradation levels of the pixels in the i-th row and columns 1 to n indicated by the video data Vdata into analog potentials Vd(1) to Vd(n) and outputs them as data signals to the data lines 14 in columns 1 to n. For the j-th column, the data signal output circuit 50 converts the gradation level d(i,j) of the pixel in the i-th row and j-th column into the potential Vd(j) of an analog signal and outputs it as a data signal to the data line 14 in the j-th column. During the horizontal scanning period (H) when the scanning signal / Gwr(i - 1) one row before the scanning signal / Gwr(i) is at the L level, the data signal output circuit 50 converts the gradation level d(i - 1,j) of the pixel in the (i - 1)-th row and j-th column into the potential Vd(j) of an analog signal and outputs it as a data signal to the data line 14 in the j-th column.

[0029] The data signal of the potential Vd(j) is applied via the data line 14 in the j-th column to the gate node g of the transistor 121 in the pixel portion 110 of the i-th row and j-th column, and the potential Vd(j) is held by the capacitive element 140. Therefore, the transistor 121 allows a current corresponding to the voltage between the gate node and the source node to flow to the OLED 130. Even when the scanning signal Gwr(i) becomes high level and the transistor 122 is turned off, the potential Vd(j) is held by the capacitive element 140, so a current continues to flow through the OLED 130. Therefore, in the pixel portion 110 of the i-th row and j-th column, until the period of one frame (V) has elapsed and the transistor 122 is turned on again and the voltage of the data signal is applied again, the OLED 130 continues to emit light with the voltage held by the capacitive element 140, that is, with brightness corresponding to the gradation level.

[0030] Here, although the pixel portion 110 of the i-th row and j-th column has been described, the OLEDs 130 of the pixel portions 110 other than the j-th column in the i-th row also emit light with the luminance indicated by the video data Vdata. Also, regarding the OLEDs 130 of the pixel portions 110 other than the i-th row, as the scanning signals / Gwr(1)~ / Gwr(m) sequentially become low level, they emit light with the luminance indicated by the video data Vdata. Therefore, in the electro-optical device 10, within the period of one frame (V), the OLEDs 130 in all the pixel portions 110 from the first row and first column to the m-th row and n-th column emit light with the luminance indicated by the video data Vdata, and an image of one frame is displayed.

[0031] FIG. 4 is a plan view showing the arrangement of pixel portions in the display region 100 of the electro-optical device, FIG. 5 is a plan view showing the shape of the pixel electrode, and FIG. 6 is a plan view showing the arrangement of the coloring layer.

[0032] Specifically, FIG. 4 is a diagram showing the arrangement of the light-emitting regions R, G1, G2, and B in the display region 100 in a plan view. The red light-emitting region R is the region of the pixel electrode 131R shown in FIG. 5 that is in contact with the light-emitting layer 132. In the case of green, the light-emitting region is divided into G1 and G2. The light-emitting regions G1 and G2 are the regions of the pixel electrode 131G that are in contact with the light-emitting layer 132. The light-emitting region B is the region of the pixel electrode 131B that is in contact with the light-emitting layer 132.

[0033] The light-emitting regions R, G1, G2, and B are defined by the openings Ap_R, Ap_G1, Ap_G2, and Ap_B, respectively. The openings Ap_R, Ap_G1, Ap_G2, and Ap_B are formed by patterning a pixel isolation layer provided to cover the pixel electrodes 131R, 131G, and 131B, as will be described later. In FIG. 4, one dot of color is represented by additive color mixing of the light generated from the light-emitting regions R, G1, G2, and B surrounded by the frame Dp.

[0034] The area of the light-emitting region B is larger than the area of the light-emitting region R. The sum of the areas of the light-emitting region G1 and the light-emitting region G2 is larger than the area of the light-emitting region B. In terms of luminous efficiency, R is the highest among RGB, so the area of the light-emitting region R is the smallest among the three colors. In terms of visibility, G is the highest among RGB, and also to ensure the lifespan, the area of the light-emitting region of G, that is, the sum of the areas of the light-emitting region G1 and the light-emitting region G2, is the largest among the three colors.

[0035] In FIG. 5, the pixel electrode 131R is connected to the lower wiring via the pixel contact region Ct_Px_R, and the lower wiring is further electrically connected to the drain node of the transistor 121 in the pixel portion 110R via a plurality of elements. The pixel contact region Ct_Px_R is provided avoiding the opening Ap_R as shown in FIG. 5 or FIG. 6 in plan view.

[0036] The pixel electrode 131G is connected to the lower wiring via the pixel contact region Ct_Px_G, and the lower wiring is further electrically connected to the drain node of the transistor 121 in the pixel portion 110G via a plurality of elements. The pixel contact region Ct_Px_G is provided in the vicinity of the light-emitting region G1 among the light-emitting regions G1 and G2, avoiding the opening Ap_G1. Note that the details of the pixel contact region Ct_Px_G will be described later. Also, let the shortest distance from the pixel contact region Ct_Px_G to the opening Ap_G1 be L1.

[0037] The pixel electrode 131G is provided with a dummy contact region Ct_Dm_G. Specifically, in the present embodiment, the dummy contact region Ct_Dm_G is provided in the vicinity of the light-emitting region G2 among the light-emitting regions G1 and G2, avoiding the opening Ap_G2. Here, assuming the shortest distance from the dummy contact region Ct_Dm_G to the opening Ap_G2 is L2, then L2 < L1. Also, assuming the shortest distance from the dummy contact region Ct_Dm_G to the light-emitting region R located diagonally upward to the right with respect to the light-emitting region G2 is L3, then L2 < L3. Details of the dummy contact region Ct_Dm_G will be described later.

[0038] In FIGS. 4, 5, and 6, the A direction is the direction obtained by rotating the Y direction clockwise by 45 degrees, and is parallel to the direction connecting two points when specifying the distances L1, L2, and L3.

[0039] The pixel electrode 131B is electrically connected to the drain node of the transistor 121 in the pixel portion 110B via the pixel contact region Ct_Px_B. The pixel contact region Ct_Px_B is provided avoiding the opening Ap_B in plan view.

[0040] As shown in FIG. 6, a red coloring layer Cf_R is provided in the light-emitting region R, a green coloring layer Cf_G is provided in the light-emitting regions G1 and G2, and a blue coloring layer Cf_B is provided in the light-emitting region B2. The pixel contact regions Ct_Px_R, Ct_Px_G, and Ct_Px_B are provided at the boundaries of the coloring layers Cf_R, Cf_G, and Cf_B in plan view, while the dummy contact region Ct_Dm_G is provided at a position overlapping the coloring layer Cf_G in plan view. The dummy contact region Ct_Dm_G is surrounded by four regions of the light-emitting regions R, G1, G2, and B in plan view. Also, when viewed in the A direction, they are arranged in the order of the light-emitting region R, the dummy contact region Ct_Dm_G, and the light-emitting region G2, and when viewed in the direction obtained by rotating the A direction clockwise by 90 degrees, they are arranged in the order of the light-emitting region B, the dummy contact region Ct_Dm_G, and the light-emitting region G1.

[0041] Next, the structures of the pixel contact region Ct_Px_R of the pixel unit 110R, the pixel contact region Ct_Px_G of the pixel unit 110G, the pixel contact region Ct_Px_B of the pixel unit 110B, and the dummy contact region Ct_Dm_G of the pixel unit 110G will be described in order.

[0042] FIG. 7 is a cross-sectional view of a main part including the light-emitting region R and the pixel contact region Ct_Px_R in the pixel unit 110R. Note that FIG. 7 is a cross-sectional view when the region including the light-emitting region R and the pixel contact region Ct_Px_R in FIG. 5 is broken along the A direction.

[0043] The contact electrode 61 is electrically connected to the circuit layer formed on the substrate 60 in the figure via a contact hole. The circuit layer located in the lower layer includes the scanning line 12, the data line 14, and the transistors 121 and 122. The reflective layer 62 is laminated on the contact electrode 61 and reflects light incident from the opposite direction in the Z direction in the Z direction. As the reflective layer 62, for example, a conductive layer in which an aluminum and copper alloy (AlCu) film is laminated on a titanium (Ti) film is used. The contact electrode 61 and the reflective layer 62 are individually formed in an island shape in plan view for each of the pixel units 110R, 110G, and 110B. Note that a gap 62Ct is generated by the island shape formation.

[0044] The antireflection enhancement layer 63 is a layer for enhancing the reflection characteristics of the reflective layer 62. The antireflection enhancement layer 63 has insulation and light transmissivity and is provided so as to cover the reflective layer 62. As the antireflection enhancement layer 63, for example, silicon oxide is used.

[0045] The first insulating layer 64 covers the antireflection layer 63 and is provided along the gap 62Ct. Therefore, the first insulating layer 64 has a recess 64a in the vicinity of the gap 62Ct. The embedded insulating layer 66 is provided so as to fill the recess 64a. The second insulating layer 65 is laminated on the first insulating layer 64 and the embedded insulating layer 66. As the first insulating layer 64 and the second insulating layer 65, for example, silicon nitride (SiN) is used, and as the embedded insulating layer 66, for example, silicon oxide is used. The protective layer 72 is an insulating film laminated on the second insulating layer 65, and for example, silicon oxide is used.

[0046] The antireflection layer 63, the first insulating layer 64, the second insulating layer 65, and the protective layer 72 have openings in the pixel contact region Ct_Px_R. The relay layer 71 is a conductive layer laminated along this opening and on the reflective layer 62 and the protective layer 72. The relay layer 71 will have a recess along this opening. For example, titanium nitride (TiN) is used for the relay layer 71.

[0047] The first optical adjustment layer 67 and the second optical adjustment layer 68 are insulating layers having light transmissivity for adjusting the optical distance in the optical resonator. For example, silicon oxide is used for the first optical adjustment layer 67 and the second optical adjustment layer 68. The first optical adjustment layer 67 and the second optical adjustment layer 68 have openings in the region CtR of the pixel contact region Ct_Px_R.

[0048] The pixel electrode 131R is a conductive layer having light transmissivity. The pixel electrode 131R is laminated on the second optical adjustment layer 68 or the relay layer 71, and in the region CtR where the first optical adjustment layer 67 and the second optical adjustment layer 68 have openings, it is laminated on the second insulating layer 65. When viewed in plan, the pixel electrode 131R is formed as shown in FIG. 5. Since the pixel electrode 131R is laminated along the opening in the region CtR, it will have a recess corresponding to the region CtR. For example, ITO (Indium Tin Oxide) is used for the pixel electrode 131R.

[0049] The pixel isolation layer 134 is an insulating film laminated on the second optical adjustment layer 68, the second insulating layer 65, or the pixel electrode 131R, and provided so as to cover the peripheral portion of the pixel electrode 131R. The pixel isolation layer 134 has an opening Ap_R in the shape shown in FIG. 4 in a plan view in the pixel portion 110R. As the pixel isolation layer 134, for example, silicon oxide is used.

[0050] The light-emitting layer 132 is laminated on the pixel electrode 131R or the pixel isolation layer 134. Although not particularly shown, the light-emitting layer 132 includes a hole injection layer, a hole transport layer, an organic light-emitting layer, and an electron transport layer, and is common to all pixels in R, G, and B.

[0051] The common electrode 133 is a conductive layer having light transmissivity and reflectivity. The common electrode 133 is , is provided so as to cover the light-emitting layer 132, and is common to all pixel portions in the pixel portions 110R, 110G, and 110B. As the common electrode 133, for example, an alloy of Mg and Ag or the like is used.

[0052] The light-emitting layer 132 is a region that is not covered by the pixel isolation layer 134 in the pixel electrode 131R, that is, a region in contact with the pixel electrode 131R, and holes are supplied from the region defined by the opening Ap_R, and emits white light. In a portion corresponding to the light-emitting region R of the pixel portion 110R, an optical resonator is formed by the reflection layer 62 and the common electrode 133, and the optical distance LR between the reflection layer 62 and the common electrode 133 is adjusted by the film thicknesses of the first optical adjustment layer 67 and the second optical adjustment layer 68. Note that the optical distance is, strictly speaking, a value obtained by multiplying the distance between the reflection layer 62 and the common electrode 133 by the refractive index of the medium between the reflection layer 62 and the common electrode 133, but here it is simply shown as a physical distance. In a portion corresponding to the light-emitting region R, the white light emitted from the light-emitting layer 132 is repeatedly reflected between the reflective layer 62 and the common electrode 133, and the intensity of light with a wavelength corresponding to the optical distance LR is enhanced. In the present embodiment, as an example, the intensity of light with a wavelength of 610 nm is enhanced in the pixel portion 110R. The enhanced light passes through the common electrode 133 and is emitted in the red color in the Z direction through the coloring layer Cf_R. In this way, red light is emitted from the light-emitting region R in the Z direction in a plan view.

[0053] The first encapsulation layer 81 is an insulating layer having light transmissibility and is provided so as to cover the common electrode 133. The planarization layer 82 is an insulating layer having light transmissibility and is provided so as to cover the first encapsulation layer 81 so that the observation surface becomes flat by eliminating steps. As the planarization layer 82, for example, an organic material such as an epoxy resin is used. The second encapsulation layer 83 is an insulating layer having light transmissibility and is provided so as to cover the planarization layer 82. The first encapsulation layer 81 and the second encapsulation layer 83 are provided to prevent moisture, oxygen, etc. from entering the light-emitting layer 132. As the first encapsulation layer 81 and the second encapsulation layer 83, for example, silicon oxynitride (SiON) is used.

[0054] In the pixel portion 110R, the coloring layer Cf_R is provided so as to cover the second encapsulation layer 83 and is provided as shown in FIG. 6 in a plan view. The coloring layer Cf_R is provided by patterning a photosensitive resin containing a pigment that transmits red light using photolithography technology.

[0055] Note that the coloring layer Cf_R is provided in the pixel portion 110R, but the green coloring layer Cf_G is provided in the pixel portion 110G, and the blue coloring layer Cf_B is provided in the pixel portion 110B. Further, a filling layer, a protective glass, etc. are provided in the coloring layers Cf_R, Cf_G, Cf_B, but they are omitted because they are not important in this case.

[0056] FIG. 8 is a cross-sectional view of a main part including a light-emitting region G1 and a pixel contact region Ct_Px_G in the pixel portion 110G. Note that FIG. 8 is a cross-sectional view when a region including the light-emitting region G1 and the pixel contact region Ct_Px_G in FIG. 5 is broken along the A direction. The difference from the pixel portion 110R in FIG. 7 is that the first optical adjustment layer 67 provided in the pixel portion 110R is not provided in the pixel portion 110G. Specifically, the first optical adjustment layer 67 and the second optical adjustment layer 68 are provided between the reflective layer 62 and the pixel electrode 131R in a portion corresponding to the light-emitting region R, whereas the first optical adjustment layer 67 is not provided between the reflective layer 62 and the pixel electrode 131G in a portion corresponding to the light-emitting region G1. Therefore, the optical distance LG between the reflective layer 62 and the common electrode 133 in a portion corresponding to the light-emitting region G1 is shorter than the optical distance LR in a portion corresponding to the light-emitting region R by the amount that the first optical adjustment layer 67 does not exist.

[0057] The pixel electrode 131G is laminated on the second optical adjustment layer 68 or the relay layer 71, and in the region CtG, it is laminated on the second insulating layer 65. The pixel electrode 131G is formed as shown in FIG. 5 in plan view. Since the pixel electrode 131G is laminated along the opening of the region CtG, it has a concave portion corresponding to the region CtG. In a portion corresponding to the light-emitting region G1, the white light emitted from the light-emitting layer 132 is repeatedly reflected between the reflective layer 62 and the common electrode 133, and the intensity of light having a wavelength corresponding to the optical distance LG is enhanced. In the present embodiment, as an example, the intensity of light having a wavelength of 540 nm is enhanced in the pixel portion 110G. The enhanced light passes through the common electrode 133, passes through the coloring layer Cf_G, and is emitted in the Z direction in green. In this way, green light is emitted in the Z direction from the light-emitting region G1 in plan view.

[0058] FIG. 9 is a cross-sectional view of a main part including the light-emitting region B and the pixel contact region Ct_Px_B in the pixel portion 110B. Note that FIG. 9 is a cross-sectional view when the region including the light-emitting region B and the pixel contact region Ct_Px_B in FIG. 5 is broken along the A direction. The difference from the pixel portion 110G in FIG. 8 is that the second optical adjustment layer 68 provided in the pixel portion 110G is not provided in the pixel portion 110B. Therefore, the optical distance LB between the reflective layer 62 and the common electrode 133 in the portion corresponding to the light-emitting region B of the pixel portion 110B is shorter than the optical distance LG in the portion corresponding to the light-emitting region G1 by the amount that the second optical adjustment layer 68 does not exist.

[0059] In the pixel electrode 131B, since the first optical adjustment layer 67 and the second optical adjustment layer 68 do not exist, it does not have the opening of the region CtR in the pixel portion 110R and the opening of the region CtG in the pixel portion 110G. Therefore, the pixel electrode 131B is laminated on the relay layer 71 in the pixel contact region Ct_Px_B and on the second insulating layer 65 in other regions. In the portion corresponding to the light-emitting region B, the white light emitted from the light-emitting layer 132 is repeatedly reflected between the reflective layer 62 and the common electrode 133, and the intensity of the light having a wavelength corresponding to the optical distance LB is enhanced. In the present embodiment, as an example, the intensity of the light having a wavelength of 470 nm is enhanced in the pixel portion 110B. The enhanced light passes through the common electrode 133, passes through the coloring layer Cf_B, and is emitted in the Z direction in blue. In this way, blue light is emitted in the Z direction from the light-emitting region B in a plan view.

[0060] As can be seen from FIGS. 7, 8, and 9, the distance LpxR from the reflective layer 62 to the pixel electrode 131R in the pixel contact region Ct_Px_R, the distance LpxG from the reflective layer 62 to the pixel electrode 131G in the pixel contact region Ct_Px_G, and the distance LpxB from the reflective layer 62 to the pixel electrode 131B in the pixel contact region Ct_Px_B are substantially equal to each other. That is, in the present embodiment, in each pixel contact region, the distances to the pixel electrodes 131R, 131G, and 131B with reference to the reflective layer 62 are substantially the same, and the heights of the pixel contact regions Ct_Px_R, Ct_Px_G, and Ct_Px_B are substantially aligned. Therefore, in the present embodiment, first, abnormal light emission caused by differences in height in the pixel contact regions Ct_Px_R, Ct_Px_G, and Ct_Px_B is suppressed.

[0061] FIG. 10 is a partial cross-sectional view of a region including the dummy contact region Ct_Dm_G in the pixel portion 110G. Note that FIG. 10 is a cross-sectional view when the region including the light-emitting region G2 and the dummy contact region Ct_Dm_G in FIG. 5 is broken along the A direction.

[0062] In FIG. 10, the light-emitting region G2 is substantially the same as the light-emitting region G1 in FIG. 8, and the optical distance between the reflective layer 62 and the common electrode 133 is also substantially the same at LG. In the dummy contact region Ct_Dm_G, the protective layer 72 and the dummy relay layer 71D are provided in this order on the Z-direction surface of the second insulating layer 65. The dummy relay layer 71D is formed by patterning the same layer as the relay layer 71, but is independent of the relay layer 71 and is not electrically connected to the relay layer 71. In the dummy contact region Ct_Dm_G, the first optical adjustment layer 67 is provided so as to cover the protective layer 72 and the dummy relay layer 71D. However, in the portion corresponding to the light-emitting region G2, the first optical adjustment layer 67 is not provided.

[0063] The second optical adjustment layer 68 is provided so as to cover the second insulating layer 65 in the portion corresponding to the light-emitting region G2, and is provided so as to cover the first optical adjustment layer 67 in the dummy contact region Ct_Dm_G. In the light-emitting region G2 and the dummy contact region Ct_Dm_G, the pixel electrode 131G is laminated on the second optical adjustment layer 68 and is formed in the shape shown in FIG. 5 in plan view. In the dummy contact region Ct_Dm_G, a first optical adjustment layer 67 and a second optical adjustment layer 68 are present between the pixel electrode 131G and the dummy relay layer 71D, and a protective layer 72, a second insulating layer 65, etc. are present between the dummy relay layer 71D and the reflective layer 62. Therefore, in the present embodiment, the pixel electrode 131G and the dummy relay layer 71D are not electrically connected, and the dummy relay layer 71D and the reflective layer 62 are also not electrically connected. In the present embodiment, the pixel electrode 131G is in a state of being electrically unconnected to the reflective layer 62 (drain node of the transistor 121) in the dummy contact region Ct_Dm_G, and is referred to as a dummy contact region in the sense that it does not contribute at all to electrical connection.

[0064] In the light-emitting region G2 and the dummy contact region Ct_Dm_G, the pixel isolation layer 134 is laminated on the second optical adjustment layer 68, the second insulating layer 65, or the pixel electrode 131G. The pixel isolation layer 134 has an opening Ap_G2 having the shape shown in FIG. 4 in plan view. For this reason, in addition to the light-emitting region G1, green light is also emitted in the Z direction from the light-emitting region G2 in plan view.

[0065] Thus, in the dummy contact region Ct_Dm_G in the present embodiment, in order from the reflective layer 62 to the pixel electrode 131G, an antireflection layer 63, a first insulating layer 64, a second insulating layer 65, a protective layer 72, a dummy relay layer 71D, a first optical adjustment layer 67, and a second optical adjustment layer 68 are provided. In the pixel contact regions Ct_Px_R, Ct_Px_G1, Ct_Px_B, the distances from the reflective layer 62 to the pixel electrode 131 are made uniform in the pixel portions 110R, 110G, 110B as described above. Specifically, in the pixel contact regions Ct_Px_R, Ct_Px_G1, Ct_Px_B, in order from the reflective layer 62 to the pixel electrode 131, an antireflection layer 63, a first insulating layer 64, a second insulating layer 65, a protective layer 72, and a relay layer 71 are provided.

[0066] In other words, in the pixel contact regions Ct_Px_R, Ct_Px_G1, and Ct_Px_B, the first optical adjustment layer 67 and the second optical adjustment layer 68 are not provided as compared with the dummy contact region Ct_Dm_G. Therefore, in the dummy contact region Ct_Dm_G, the distance LDm from the reflective layer 62 to the pixel electrode 131G is longer than the distances LpxR, LpxG, and LpxB in the pixel contact regions Ct_Px_R, Ct_Px_G1, and Ct_Px_B. That is, in the pixel portions 110R, 110G, and 110B, when the reflective layer 62 is used as a reference, the distance to the pixel electrode 131 in the Z direction is the longest (thickest) in the dummy contact region Ct_Dm_G.

[0067] The first sealing layer 81 is provided so as to cover the common electrode 133. The planarization layer 82 provided so as to cover the first sealing layer 81 is formed, for example, by screen printing. Screen printing is a printing method that uses a "screen mesh" in which synthetic fibers or metal fibers are folded. An organic material such as an epoxy resin is passed through the mesh of the screen mesh by the movement of a squeegee and printed so as to cover the first sealing layer 81. In screen printing, the intersections of the mesh press the first sealing layer 81 as the squeegee moves. When pressing, the force is not evenly applied in the display region 100, and some regions may be compressed more than other regions. In addition, in the manufacturing process of the electro-optical device 10, not limited to screen printing, there are quite a few cases where some regions are compressed due to some force being applied in the display region 100.

[0068] In the compressed region, the light-emitting layer 132 becomes locally thinner. In the portion where the light-emitting layer 132 becomes locally thinner, the resistance value becomes lower and a minute current easily flows. When a minute current flows, there is a tendency to emit light efficiently in red. Note that this red light is light in a wavelength range that resonates with the optical resonator of the optical distance LR. In order to prevent this phenomenon, it can be addressed by increasing the thickness of the planarization layer 82. However, since the distance from the light-emitting layer 132 to the coloring layers Cf_R, Cf_G, and Cf_B becomes longer, there is a problem that the viewing angle becomes narrower.

[0069] In this embodiment, when a part of the display area 100 is pressed, the pressing is suppressed with the dummy contact area Ct_Dm_G serving as a stopper, so that the light-emitting layer 132 is prevented from becoming locally thin in the light-emitting areas R, G1, G2, and B. Also, the light-emitting layer 132 becomes thin due to the pressing around the dummy contact area Ct_Dm_G. In the portion where the light-emitting layer 132 becomes locally thin, there is a tendency to emit light in red as described above. The dummy contact area Ct_Dm_G approaches the light-emitting area G2, is away from the coloring layer Cf_R, and is included in the coloring layer Cf_G when viewed in plan view. For this reason, even if light is emitted in red due to the thinning of the light-emitting layer 132 in the vicinity of the dummy contact area Ct_Dm_G, the red light is blocked by the coloring layer Cf_G and thus is not visually recognized by the observer. Therefore, according to this embodiment, it is possible to suppress a decrease in display quality caused by local pressing on the display area 100.

[0070] Note that the light-emitting element 130R electrically includes the pixel electrode 131R, the light-emitting layer 132, and the common electrode 133. Structurally, in addition to the light-emitting area R, it includes a relay layer 71 for supplying current from the transistor 121 to the pixel electrode 131R and the pixel contact area Ct_Px_R. The light-emitting element 130G electrically includes the pixel electrode 131G, the light-emitting layer 132, and the common electrode 1 33. Structurally, in addition to the light-emitting areas G1 and G2, it includes a relay layer 71 for supplying current from the transistor 121 to the pixel electrode 131G, the pixel contact area Ct_Px_G, the dummy contact area Ct_Dm_G, and the dummy relay layer 71D. The light-emitting element 130B electrically includes the pixel electrode 131 B and the light-emitting layer 132, and the common electrode 1 33. Structurally, in addition to the light-emitting area B, it includes a transistor in the pixel electrode 131B.​​​ It includes a relay layer 71 for supplying current from 121 and a pixel contact region Ct_Px_B.

[0071] Next, the electro-optical device 10 according to the second embodiment will be described. The second embodiment is obtained by changing the structure of the dummy contact region Ct_Dm_G, and other than the dummy contact region Ct_Dm_G, it is the same as the first embodiment. Therefore, for the second embodiment, the description other than the dummy contact region Ct_Dm_G will be omitted. Also, for the same elements as in the first embodiment, the same reference numerals will be given and the description thereof will be omitted as appropriate.

[0072] FIG. 11 is a partial cross-sectional view of a region including the dummy contact region Ct_Dm_G. Note that FIG. 11 is, like FIG. 10, a cross-sectional view when the region including the light-emitting region G2 and the dummy contact region Ct_Dm_G in FIG. 5 is broken along the A direction.

[0073] As shown in FIG. 11, in the second embodiment, in the dummy contact region Ct_Dm_G, an anti-reflection layer 63, a first insulating layer 64, a second insulating layer 65, and a protective layer 72 are formed with openings. For this reason, the dummy relay layer 71D is electrically connected to the reflection layer 62 in the dummy contact region Ct_Dm_G. The first optical adjustment layer 67 is provided so as to cover the dummy relay layer 71D and is not provided in the light-emitting region G2. The second optical adjustment layer 68 is provided so as to cover the first optical adjustment layer 67 in the dummy contact region Ct_Dm_G and the light-emitting region G2. In the light-emitting region G2 and the dummy contact region Ct_Dm_G, the pixel electrode 131G is laminated on the second optical adjustment layer 68 and is formed in the shape shown in FIG. 5 in plan view.

[0074] In the second embodiment, the relay layer 71, the first optical adjustment layer 67, the second optical adjustment layer 68, and the pixel electrode 131G are provided along the openings of the anti-reflection layer 63, the first insulating layer 64, the second insulating layer 65, and the protective layer 72 in the dummy contact region Ct_Dm_G. Therefore, in the dummy contact region Ct_Dm_G, the relay layer 71, the first optical adjustment layer 67, the second optical adjustment layer 68, and the pixel electrode 131G will have recesses 75 corresponding to the apertures. Thus, in the second embodiment, the pixel electrode 131G and the dummy relay layer 71D are in a non-electrically connected state, and the dummy relay layer 71D and the reflective layer 62 are in an electrically connected state.

[0075] According to the second embodiment, similar to the first embodiment, it is possible to suppress a decrease in display quality due to local pressing on the display region 100. Further, in the second embodiment, compared with the first embodiment, recesses 75 are provided in the dummy contact region Ct_Dm_G. Due to these recesses 75, the surrounding of the light-emitting layer 132 around the recesses 75 deteriorates, and the light-emitting layer 132 becomes locally thinner. When the light-emitting layer 132 becomes thinner, the resistance of the light-emitting layer 132 decreases, and abnormal light emission is likely to occur. The abnormal light emission due to the thinning of the light-emitting layer 132 is caused by the decrease in resistance of the light-emitting layer 132, so it emits light in red with high luminous efficiency. However, the dummy contact region Ct_Dm_G is provided at a position away from the light-emitting regions R, G1, G2, and B in plan view and at a position overlapping the coloring layer Cf_G. For this reason, the red abnormal light emission generated near the dummy contact region Ct_Dm_G is blocked by the green coloring layer Cf_G and is difficult to be visually recognized, so a decrease in display quality can be suppressed. In other words, in the second embodiment, abnormal light emission that is difficult to be visually recognized is concentrated and generated at the location where the light-emitting layer 132 is locally thinned by the recesses 75, and the adverse effects on the light-emitting regions R, G1, G2, and B can be reduced.

[0076] Also, in the second embodiment, due to the step in the dummy contact region Ct_Dm_G, not only the light-emitting layer 132 but also the surrounding of the first sealing layer 81 deteriorates. When the surrounding of the first sealing layer 81 deteriorates, the moisture shielding property decreases, but it is possible to easily detect the entry of foreign matter (dust) into the second sealing layer 83 laminated on the planarization layer 82.

[0077] Note that it is also possible to form a recess 75 in the dummy contact region Ct_Dm_G to create a step in the following first modification example and second modification example.

[0078] FIG. 12 is a partial cross-sectional view of a region including the dummy contact region Ct_Dm_G in the first modification example. As shown in FIG. 12, in the first modification example, compared with FIG. 10, in the dummy contact region Ct_Dm_G, the first optical adjustment layer 67 and the second optical adjustment layer 68 are apertured. For this reason, the pixel electrode 131G is electrically connected to the dummy relay layer 71D in the dummy contact region Ct_Dm_G. In the first modification example, an antireflection layer 63, a first insulating layer 64, a second insulating layer 65, and a protective layer 72 are provided between the reflective layer 62 and the dummy relay layer 71D. Therefore, in the first modification example, the pixel electrode 131G is electrically connected to the dummy relay layer 71D in the dummy contact region Ct_Dm_G, but the dummy relay layer 71D and the reflective layer 62 are in a non-electrically connected state.

[0079] According to the first modification example, similar to the first embodiment, it is possible to suppress a decrease in display quality due to local pressing on the display region 100. Further, according to the first embodiment, similar to the second embodiment, due to the step in the dummy contact region Ct_Dm_G, it is possible to easily detect the entry of foreign matter into the second sealing layer 83.

[0080] FIG. 13 is a partial cross-sectional view of a region including the dummy contact region Ct_Dm_G in the second modification example. As shown in FIG. 13, in the second modification example, in the dummy contact region Ct_Dm_G, a configuration is provided in which the dummy contact region according to the second embodiment and the dummy contact region according to the first modification example are arranged side by side. In the second modification example, the dummy relay layer 71D includes a first dummy relay layer 711D and a second dummy relay layer 712D. Among them, the first dummy relay layer 711D corresponds to the dummy relay layer 71D in the dummy contact region according to the first modification example and is electrically connected to the pixel electrode 131. Further, the second dummy relay layer 712D corresponds to the dummy relay layer 71D in the dummy contact region according to the second embodiment and is electrically connected to the reflective layer 62. The first dummy relay layer 711D and the second dummy relay layer 712D are formed by patterning the same conductive layer as the relay layer 71, but are not electrically connected to each other.

[0081] In the second modification example, compared with the second embodiment or the first modification example, the region with a step in the dummy contact region Ct_Dm_G expands, so that the entry of foreign matter into the second sealing layer 83 can be detected more easily.

[0082] <Electronic device> Next, an electronic device to which the electro-optical device 10 according to the embodiment or the like is applied will be described. The electro-optical device 10 is suitable for applications with small-sized pixels and high-definition displays. Therefore, as an electronic device, a head-mounted display will be described as an example.

[0083] FIG. 14 is a view showing the appearance of the head-mounted display, and FIG. 15 is a view showing its optical configuration. First, as shown in FIG. 14, the head-mounted display 300 has a temple 310, a bridge 320, and lenses 301L and 301R, similar to general glasses in appearance. Further, as shown in FIG. 15, in the vicinity of the bridge 320 and on the back side (lower side in the figure) of the lenses 301L and 301R, an electro-optical device 10L for the left eye and an electro-optical device 10R for the right eye are provided. The image display surface of the electro-optical device 10L is arranged to be on the left in FIG. 15. Accordingly, the display image by the electro-optical device 10L is emitted in the 9 o'clock direction in the figure through the optical lens 302L. The half mirror 303L reflects the display image by the electro-optical device 10L in the 6 o'clock direction while transmitting the light incident from the 12 o'clock direction. The image display surface of the electro-optical device 10R is arranged to be on the right, opposite to the electro-optical device 10L. Accordingly, the display image by the electro-optical device 10R is emitted in the 3 o'clock direction in the figure through the optical lens 302R. The half mirror 303R reflects the display image by the electro-optical device 10R in the 6 o'clock direction while transmitting the light incident from the 12 o'clock direction.

[0084] In this configuration, the wearer of the head-mounted display 300 can observe the display images by the electro-optical devices 10L and 10R in a see-through state where they are superimposed on the external situation. Also, in this head-mounted display 300, when the electro-optical device 10L displays the left-eye image and the electro-optical device 10R displays the right-eye image among the binocular images with parallax, the wearer can be made to perceive the displayed images as if they have depth and stereoscopic effects.

[0085] Note that the electronic device including the electro-optical device 10 can be applied not only to the head-mounted display 300 but also to an electronic viewfinder in a video camera, a lens-exchangeable digital camera, a portable information terminal, a display unit of a wristwatch, a light valve of a projection type projector, and the like.

[0086] <Supplementary Note> From the above description, for example, the following preferred embodiments of the present disclosure can be grasped. For the sake of easy understanding of each embodiment, the reference numerals in the drawings are also shown in parentheses for convenience below, but it is not intended to limit the present invention to the illustrated embodiments.

[0087] <Supplementary Note 1> An electro-optical device (10) according to one aspect (Aspect 1) includes a substrate (60), a first light-emitting element (130G) including a common electrode (133), a first pixel electrode (131G), and a light-emitting layer (132), a first reflective layer (62) provided between the substrate (60) and the first pixel electrode (131G), and a first relay layer (71) that electrically connects the first reflective layer (62) and the first pixel electrode (131G). The first light-emitting element (130G) includes, in a plan view, a first light-emitting region (G1) where the first pixel electrode (131G) and the light-emitting layer (132) are in contact with each other among the regions where the first pixel electrode (131G) and the light-emitting layer (132) overlap, a first pixel contact region (Ct_Px_G) where the first pixel electrode (131G) and the first relay layer (71) overlap in a plan view, and a non-contact region (Ct_Dm_G) that is outside the first light-emitting region (G1) in a plan view and is different from the first pixel contact region (Ct_Px_G). In the thickness direction of the substrate (60), the distance between the first reflective layer (62) and the first pixel electrode (131G) in the non-contact region (Ct_Dm_G) is longer than the distance between the first reflective layer (62) and the first pixel electrode (131G) in the first pixel contact region (Ct_Px_G), and it is provided so as to overlap the non-contact region (Ct_Dm_G) in a plan view, and has a first coloring layer (Cf_G) that shields light emitted from the non-contact region (Ct_Dm_G).

[0088] In Aspect 1, when a part of the electro-optical device (10) is pressed, the non-contact region (Ct_Dm_G) serves as a stopper and suppresses the pressing. Further, even if the light-emitting layer 132 becomes thinner due to the pressing, the thinned portion is limited to the periphery of the non-contact region (Ct_Dm_G). According to Aspect 1, even if abnormal light emission occurs around the non-contact region (Ct_Dm_G), it is shielded by the coloring layer (Cf_G). Therefore, according to Aspect 1, it is possible to prevent abnormal light emission from being visually recognized by an observer, and thus it is possible to suppress a decrease in display quality. Note that the pixel electrode 131G is an example of the first pixel electrode, the OLED 130G is an example of the first light-emitting element, the reflective layer 62 in the pixel portion 110 of G is an example of the first reflective layer, the relay layer 71 in the pixel portion 110 of G is an example of the first relay layer, and the colored layer Cf_G is an example of the first colored layer. Also, the dummy contact region (Ct_Dm_G) is an example of a non-connected region.

[0089] <Appendix 2> The electro-optical device (10) according to the specific aspect (Aspect 2) of Aspect 1 is provided between the first reflective layer (62) and the first pixel electrode (131G), and at least one of the first reflective layer (62) and the first pixel electrode (131G) has a dummy relay layer (71D) that is electrically non-connected. The non-connected region (Ct_Dm_G) is a region where the first pixel electrode (131G), the dummy relay layer (71D), the light-emitting layer (132), and the common electrode (133) overlap in a plan view. Note that in Aspect 2, at least one of the first reflective layer (62) and the first pixel electrode (131G) is electrically non-connected to the dummy relay layer (71D), and the following Aspects 3 to 5 are conceivable for such an aspect.

[0090] <Appendix 3> In the electro-optical device (10) according to the specific aspect (Aspect 3) of Aspect 2, the dummy relay layer (7 1D) is electrically non-connected to the first reflective layer (62) and is G ) and electrically non-connected to the first pixel electrode (131

[0091] <Appendix 4> In the electro-optical device (10) according to the specific aspect (Aspect 4) of Aspect 2, the dummy relay layer (71D) is electrically connected to the first reflective layer (62) and is electrically non-connected to the first pixel electrode (131G).

[0092] <Appendix 5> In the electro-optical device (10) according to the specific aspect (Aspect 5) of Aspect 2, the dummy relay layer (71D) is not electrically connected to the first reflective layer (62) and is electrically connected to the first pixel electrode (131G).

[0093] <Appendix 6> In the electro-optical device (10) according to the specific aspect (Aspect 6) of Aspect 2, the dummy relay layer (71D) includes a first dummy relay layer (711D) that is electrically connected to the first pixel electrode (131G) and a second dummy relay layer (712D) that is electrically connected to the first reflective layer (62), and the first dummy relay layer (711D) and the second dummy relay layer (712D) are not electrically connected to each other.

[0094] <Appendix 7> The electro-optical device (10) according to the specific aspect (Aspect 7) of Aspect 1 includes a common electrode (132) , a second light-emitting element (130B) including a second pixel electrode (131B) and a light-emitting layer (132), , a second reflective layer (62) provided between the substrate (60) and the second pixel electrode (131B), , and a second relay layer ( 71) that electrically connects the second reflective layer (62) and the second pixel electrode (131B). The second light-emitting element (130B) includes, in a plan view, a second light-emitting region (B) where the second pixel electrode (13 1B) and the light-emitting layer (132) are in contact with each other among the regions where the second pixel electrode (131B) and the light-emitting layer ( 132) overlap, and a second pixel contact region (Ct_Px_B) where the second pixel electrode (131B) and the second relay layer (71) overlap in a plan view. In the thickness direction of the substrate 60), the distance between the first reflective layer (62) and the first pixel electrode in the non-contact region (Ct_Dm_G) is longer than the distance between the second reflective layer in the second pixel contact region (Ct_Px_B) and the second pixel electrode (131 G ), and the first pixel contact region (62) and the second pixel electrode (131B). The distance between the first reflective layer (62) and the first pixel electrode (131G) in (Ct_Px_G) is substantially the same as the distance between the second reflective layer (62) and the second pixel electrode (13 1 B ) in the second pixel contact region (Ct_Px_B). According to Embodiment 7, since the height of the second pixel electrode (131 B) in the second pixel contact region (Ct_Px_B) is aligned with the height of the first pixel electrode (131G) in the first pixel contact region (Ct_Px_G), abnormal light emission due to surface steps can be suppressed. Note that the pixel electrode 131B is an example of the second pixel electrode, the OLED 130B is an example of the second light-emitting element, the reflective layer 62 in the pixel portion 110 of B is an example of the second reflective layer, and the relay layer 71 in the pixel portion 110 of B is an example of the second relay layer.

[0095] <Appendix 8> In the electro-optical device (10) according to the specific embodiment (Embodiment 8) of Embodiment 7, a third light-emitting element (130R) including a common electrode (133), a third pixel electrode (133R), and a light-emitting layer (132); a third reflective layer (62) provided between the substrate (60) and the third pixel electrode (131R); and a third relay layer (71) that electrically connects the third reflective layer (62) and the third pixel electrode (131R). In a plan view, the third light-emitting element (130R) includes a third light-emitting region (R) where the third pixel electrode (131R) and the light-emitting layer (132) are in contact with each other among the regions where the third pixel electrode (131R) and the light-emitting layer (132) overlap, and a third pixel contact region (Ct_Px_R) where the third pixel electrode (131R) and the third relay layer (71) overlap in a plan view. In the thickness direction of the substrate (60), the distance between the first reflective layer (62) and the first pixel electrode (131G) in the non-contact region (Ct_Dm_G) is longer than the distance between the third reflective layer (62) and the third pixel electrode (131R) in the third pixel contact region (Ct_Px_R), and the distance between the first reflective layer (62) and the first pixel electrode (131G) in the first pixel contact region (Ct_Px_G) is substantially the same as the distance between the third reflective layer (62) and the third pixel electrode (131R) in the third pixel contact region (Ct_Px_R). According to Embodiment 8, since the height of the third pixel electrode (131R) in the third pixel contact region (Ct_Px_R) is aligned with the height of the first pixel electrode (131G) in the first pixel contact region (Ct_Px_G), abnormal light emission due to surface steps is suppressed. Note that the pixel electrode 131R is an example of the third pixel electrode, the OLED 130R is an example of the third light-emitting element, the reflective layer 62 in the pixel portion 110 of B is an example of the third reflective layer, and the relay layer 71 in the pixel portion 110 of B is an example of the third relay layer.

[0096] <Appendix 9> In the electro-optical device (10) according to a specific aspect (Aspect 9) of Aspect 8, the first light-emitting element (130G) includes a fourth light-emitting region (G2). In plan view, the non-connection region (Ct_Dm_G) is provided between the first light-emitting region (G1), the second light-emitting region (B), the third light-emitting region (R), and the fourth light-emitting region (G2), and the distance (L2) between the non-connection region (Ct_Dm_G) and the fourth light-emitting region (G2) is shorter than the distance (L3) between the non-connection region (Ct_Dm_G) and the third light-emitting region (R). According to Aspect 9, since the first light-emitting element (130G) has the sum of the areas of the first light-emitting region (G1) and the fourth light-emitting region (G2), visibility can be enhanced. Further, according to Aspect 9, since the non-connection region (Ct_Dm_G) is separated from the third light-emitting region (R) and is close to the fourth light-emitting region (G2), it is possible to make it difficult to visually recognize abnormal light emission around the non-connection region (Ct_Dm_G).

[0097] <Appendix 10> In the electro-optical device (10) according to a specific aspect (Aspect 10) of any one of Aspects 2 to 5, no insulating layer is provided between the first relay layer (71) and the first pixel electrode (131G), and insulating layers (67, 68) are provided between the dummy relay layer (71D) and the first pixel electrode (131G). According to Aspect 10, by providing the insulating layers (67, 68), the distance between the dummy relay layer (71D) and the first pixel electrode (131G) can be increased.

[0098] <Appendix 11> In the electro-optical device (10) according to a specific aspect (Aspect 11) of either Aspect 8 or 9, in the first light-emitting region (G), an insulating layer (68) with a first layer thickness is provided between the first reflective layer (62) and the first pixel electrode (131G). In the third light-emitting region (R), an insulating layer (67, 68) with a second layer thickness thicker than the first layer thickness is provided between the third reflective layer (62) and the third pixel electrode (131R). The first optical distance (LG) between the common electrode (133) and the first reflective layer (62) in the first light-emitting region (G) is longer than the second optical distance (LB) between the common electrode (133) and the second reflective layer (62) in the second light-emitting region (B), and the first optical distance (LG) is shorter than the third optical distance (LR) between the common electrode (133) and the third reflective layer (62) in the third light-emitting region (R). According to Aspect 11, the wavelength of the light emitted from the light-emitting region can be made longer in the order of the third light-emitting region (R), the first light-emitting region (G), and the second light-emitting region (B).

[0099] <Appendix 12> In the electro-optical device (10) according to a specific aspect (Aspect 12) of Aspect 11, the light emission generated from the non-connection region (Ct_Dm_G) is light in a wavelength range resonating with the third optical distance (LR). According to Aspect 12, the light generated from the non-connection region (Ct_Dm_G) is blocked by the first light-shielding layer (Cf_G) having a wavelength shorter than that of the light.

[0100] <Appendix 13> The electronic device (300) according to Aspect 13 includes the electro-optical device (10) according to any one of Aspects 1 to 12.

[0101] <Appendix 14> Another electro-optical device (10) according to Aspect 14 is provided on a substrate (10), and sandwiches a light-emitting layer (132) between the first pixel electrode (131G) and the common electrode (133) to emit a first color from the first light-emitting region (G) of the first pixel portion (110G ), and provided on a substrate (60), and sandwiches a light-emitting layer (132)) is held, and a second pixel portion (110R) that emits a second color having a longer wavelength than the first color from the second light-emitting region (R) and includes The first pixel portion (110G) In plan view, a first pixel contact region (Ct_Px_G) where the first pixel electrode (131G) is connected to the lower wiring (61), and a dummy contact region (Ct_Dm_G) where the first pixel electrode (131G) is not connected to the lower wiring (61) and includes The second pixel portion (110R) includes, in plan view, a second pixel contact region (Ct_Px_R) where the second pixel electrode (131R) is connected to the lower wiring (61). In a cross-sectional view, when the substrate (60) is used as a reference, the first pixel electrode (131G) in the dummy contact region (Ct_Dm_G) is higher than the pixel electrode (131G) in the first pixel contact region (Ct_Px_G) and the second pixel electrode (131R) in the second pixel contact region (Ct_Px_R). In a portion that overlaps the dummy contact region (Ct_Dm_G) in plan view, there is a coloring layer (Cf_G) corresponding to the first color. In this Embodiment 1 4 when a part of the electro-optical device (10) is pressed, the pressing is suppressed by the dummy contact region (Ct_Dm_G) serving as a stopper. Also, even if the light-emitting layer 132 becomes thin due to the pressing, it is limited to the periphery of the dummy contact region (Ct_Dm_G). Therefore, according to Embodiment 1 even if abnormal light emission occurs around the dummy contact region (Ct_Dm_G), it is blocked by the coloring layer (Cf_G). 4 Therefore, according to Embodiment 1 abnormal light emission 4 is Since it is prevented from being visually recognized by an observer, a reduction in display quality can be suppressed.

Explanation of Signs

[0102] 10…Electro-optical device, 12…Scanning line, 14…Data line, 100…Display area, 60…Substrate, 62…Reflection layer, 71…Relay layer, 71D…Dummy relay layer, 110…Pixel portion, 121, 122…Transistor, 130, 130R, 130G, 130B…Light-emitting element, 131, 131R, 131G, 131B…Pixel electrode, 132…Light-emitting layer, 133…Common electrode, Ct_Px_G…Pixel contact area (first pixel contact area), Ct_Px_B…Pixel contact area (second pixel contact area), Ct_Px_R…Pixel contact area (third pixel contact area), Ct_Dm_G…Dummy contact area (non-connected area).

Claims

1. A substrate, a first light-emitting element including a common electrode, a first pixel electrode, and a light-emitting layer, a first reflective layer provided between the substrate and the first pixel electrode, a first relay layer electrically connecting the first reflective layer and the first pixel electrode, a dummy relay layer provided between the first reflective layer and the first pixel electrode and electrically non-connected to at least one of the first reflective layer and the first pixel electrode, comprising, in the first light-emitting element, in a region where the first pixel electrode and the light-emitting layer overlap in plan view among, a first light-emitting region where the first pixel electrode and the light-emitting layer are in contact with each other, a first pixel contact region where the first pixel electrode and the first relay layer overlap in plan view, a non-connected region outside the first light-emitting region in plan view and different from the first pixel contact region and, including, in the thickness direction of the substrate, the distance between the first reflective layer and the first pixel electrode in the non-connected region is longer than the distance between the first reflective layer and the first pixel electrode in the first pixel contact region and, a first colored layer provided so as to overlap the non-connected region in plan view and blocking light emission generated from the non-connected region, wherein the non-connected region is a region where the first pixel electrode, the dummy relay layer, the light-emitting layer, and the common electrode overlap in plan view characterized electro-optical device.

2. The dummy relay layer is electrically non-connected to the first reflective layer and electrically non-connected to the first pixel electrode The electro-optical device according to claim 1.

3. The dummy relay layer is electrically connected to the first reflective layer and electrically non-connected to the first pixel electrode The electro-optical device according to claim 1.

4. The dummy relay layer is electrically non-connected to the first reflective layer and electrically connected to the first pixel electrode The electro-optical device according to claim 1.

5. The dummy relay layer includes a first dummy relay layer electrically connected to the first pixel electrode and a second dummy relay layer electrically connected to the first reflective layer, wherein the first dummy relay layer and the second dummy relay layer are electrically non-connected The electro-optical device according to claim 1.

6. a second light-emitting element including the common electrode, a second pixel electrode, and the light-emitting layer, a second reflective layer provided between the substrate and the second pixel electrode, a second relay layer electrically connecting the second reflective layer and the second pixel electrode, comprising, ​ ​ ​ ​ The second light-emitting element is in a plan view, among the regions where the second pixel electrode and the light-emitting layer overlap, a second light-emitting region where the second pixel electrode and the light-emitting layer are in contact with each other, a second pixel contact region where the second pixel electrode and the second relay layer overlap in a plan view, and includes in the thickness direction of the substrate, the distance between the first reflective layer and the first pixel electrode in the non-connection region is longer than the distance between the second reflective layer and the second pixel electrode in the second pixel contact region 、 The distance between the first reflective layer and the first pixel electrode in the first pixel contact region is substantially the same as the distance between the second reflective layer and the second pixel electrode in the second pixel contact region The electro-optical device according to claim 1, characterized in that

7. A third light-emitting element including the common electrode, the third pixel electrode, and the light-emitting layer; A third reflective layer provided between the substrate and the third pixel electrode; A third relay layer that electrically connects the third reflective layer and the third pixel electrode; and includes The third light-emitting element is in a plan view, among the regions where the third pixel electrode and the light-emitting layer overlap, a third light-emitting region where the third pixel electrode and the light-emitting layer are in contact with each other, a third pixel contact region where the third pixel electrode and the third relay layer overlap in a plan view, and includes in the thickness direction of the substrate, the distance between the first reflective layer and the first pixel electrode in the non-connection region is longer than the distance between the third reflective layer and the third pixel electrode in the third pixel contact region The distance between the first reflective layer and the first pixel electrode in the first pixel contact region 、 is substantially the same as the distance between the third reflective layer and the third pixel electrode in the third pixel contact region The electro-optical device according to claim 6, characterized in that

8. The first light-emitting element includes a fourth light-emitting region, in a plan view, the non-connection region is provided between the first light-emitting region, the second light-emitting region, the third light-emitting region, and the fourth light-emitting region and the distance between the non-connection region and the fourth light-emitting region is shorter than the distance between the non-connection region and the third light-emitting region The electro-optical device according to claim 7, characterized in that

9. No insulating layer is provided between the first relay layer and the first pixel electrode, and an insulating layer is provided between the dummy relay layer and the first pixel electrode The electro-optical device according to any one of claims 1 to 4, characterized in that ​ ​ ​

10. In the first light-emitting region, an insulating layer with a first layer thickness is provided between the first reflective layer and the first pixel electrode, and in the third light-emitting region, an insulating layer with a second layer thickness thicker than the first layer thickness is provided between the third reflective layer and the third pixel electrode, wherein a first optical distance between the common electrode and the first reflective layer in the first light-emitting region is longer than a second optical distance between the common electrode and the second reflective layer in the second light-emitting region, and the first optical distance is shorter than a third optical distance between the common electrode and the third reflective layer in the third light-emitting region, characterizing the electro-optical device according to claim 7 or 8.

11. The light emission generated from the non-connected region is light in a wavelength range resonating with the third optical distance, characterizing the electro-optical device according to claim 10.

12. An electronic device having the electro-optical device according to any one of claims 1 to 11. ​ ​

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