Exposure apparatus, exposure method, device manufacturing method, and flat panel display manufacturing method

Abstract

An exposure apparatus (1) exposes a second exposure pattern (90) in a state of being superimposed on a first exposure pattern (85) while moving, in a scanning direction, a substrate (10) onto which the first exposure pattern (85) in which a section of a first exposure portion (85A) and a section of a second exposure portion (85B) are joined is exposed. The exposure apparatus is provided with a plurality of exposure modules that divide and expose the second exposure pattern (90). The plurality of exposure modules each comprise a spatial light modulator that has a plurality of elements, the plurality of elements being controlled according to the second exposure pattern (90), an illumination optical system that illuminates the spatial light modulator, and a projection optical system (84) that projects an image of the spatial light modulator controlled according to the second exposure pattern (90) onto the substrate (10). At least one of the plurality of exposure modules exposes a joint (85C) at which the section of the first exposure portion (85A) and the section of the second exposure portion (85B) are joined.

Description

Technical Field

[0001] The present invention relates to an exposure apparatus, Exposure method, a device manufacturing method, and a method for manufacturing a flat panel display. This application claims priority based on Japanese Patent Application No. 2021-111777 filed on July 5, 2021, the content of which is incorporated herein by reference.

Background Art

[0002] Conventionally, as an exposure apparatus that irradiates a substrate with illumination light through an optical system, there is known an exposure apparatus that passes light modulated using a spatial light modulator through a projection optical system, and forms an image by this light on a resist applied on the substrate for exposure (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

[0004] One aspect of the present invention is an exposure apparatus that exposes a substrate on which a first exposure pattern in which a part of a first exposure portion and a part of a second exposure portion are joined together is exposed while moving the substrate in a scanning direction, and exposes a second exposure pattern by overlapping it on the first exposure pattern Exposure method using the same wherein By the exposure module of the exposure apparatus the second exposure pattern is divided and exposed Do the plurality of exposure modules In the spatial light modulator have a plurality of elements and control the plurality of elements according to the second exposure pattern Be control Do illuminate the spatial light modulator Do project an image of the spatial light modulator controlled according to the second exposure pattern onto the substrate Do at least one of the plurality of exposure modules exposes a joint portion where a part of the first exposure portion and a part of the second exposure portion are joined together. Another aspect of the present invention is an exposure apparatus that exposes a second exposure pattern over a first exposure pattern while moving a substrate on which a first exposure pattern in which a part of a first exposure portion and a part of a second exposure portion are joined is exposed in a scanning direction, the exposure apparatus including a plurality of exposure modules that divide and expose the second exposure pattern, the plurality of exposure modules including a spatial light modulator having a plurality of elements and the plurality of elements being controlled according to the second exposure pattern, an illumination optical system that illuminates the spatial light modulator, a projection optical system that projects an image of the spatial light modulator controlled according to the second exposure pattern onto the substrate, a measurement system that measures the position of the joint portion before the substrate is exposed by the plurality of exposure modules, and a control unit that controls the exposure position of the second exposure pattern by the plurality of exposure modules based on the measurement result of the measurement system, wherein at least one of the plurality of exposure modules exposes a joint portion where a part of the first exposure portion and a part of the second exposure portion are joined.

[0005] Another aspect of the present invention is an exposure apparatus that exposes a second exposure pattern over a first exposure pattern while moving a substrate on which the first exposure pattern has been exposed in a scanning direction, the exposure apparatus including: a plurality of exposure modules that divide and expose the second exposure pattern; a detection unit that detects a predetermined region in the first exposure pattern where the exposure state is different from the exposure states of other regions; and an adjustment unit that adjusts the exposure modules based on the detection result of the detection unit. The plurality of exposure modules include a spatial light modulator having a plurality of elements and in which the plurality of elements are controlled according to the second exposure pattern, an illumination optical system that illuminates the spatial light modulator, and a projection optical system that projects an image of the spatial light modulator controlled according to the second exposure pattern onto the substrate. At least one of the plurality of exposure modules adjusted by the adjustment unit exposes the predetermined region. , before the second exposure pattern is exposed by the exposure module, detects; and an adjustment unit that adjusts the exposure module based on the detection result of the detection unit. Do and control the exposure position of the second exposure pattern and an adjustment unit. The plurality of exposure modules include a spatial light modulator having a plurality of elements and in which the plurality of elements are controlled according to the second exposure pattern, an illumination optical system that illuminates the spatial light modulator, and a projection optical system that projects an image of the spatial light modulator controlled according to the second exposure pattern onto the substrate. At least one of the plurality of exposure modules adjusted by the adjustment unit exposes the predetermined region.

[0006] Another aspect of the present invention is an exposure apparatus that exposes a first exposure pattern while moving a substrate in a scanning direction, the exposure apparatus including: an exposure module including a spatial light modulator having a plurality of elements and in which the plurality of elements are controlled according to the first exposure pattern, an illumination optical system that illuminates the spatial light modulator, and a projection optical system that projects an image of the spatial light modulator controlled according to the first exposure pattern onto the substrate; a reception unit that receives information regarding another exposure apparatus that exposes a second exposure pattern over the first exposure pattern with respect to the substrate on which the first exposure pattern has been exposed, before the first exposure pattern is exposed on the substrate; and an adjustment unit that adjusts the exposure module based on the information received by the reception unit.

[0007] One aspect of the present invention includes exposing the substrate using the exposure apparatus described above and developing the exposed substrate.

[0008] One aspect of the present invention includes exposing a substrate for a flat panel display using the exposure apparatus described above, and developing the exposed substrate.

[0009] One aspect of the present invention is a device manufacturing method for superposing and exposing patterns of different layers of an electronic device on a substrate using a first exposure apparatus that projects and exposes a fixed pattern on a mask onto the substrate and a second exposure apparatus that projects and exposes a variable pattern by a spatial light modulator onto the substrate. When the size of a first projection area of the first exposure apparatus is smaller than the size of the electronic device to be formed on the substrate, a first step of forming a first layer of the electronic device by splicing and exposing a projected image of the fixed pattern that appears in the first projection area by moving the substrate, and the second exposure apparatus has a plurality of exposure modules that project the variable pattern within a second projection area smaller than the size of the first projection area, and a second step of forming a second layer of the electronic device by splicing and exposing projected images of the variable pattern projected onto the substrate from each of the plurality of exposure modules. When the second step is performed after the first step, in the second step, the position of the projected image of the variable pattern from each of the plurality of exposure modules is corrected based on the splicing error generated in the first step. When the first step is performed after the second step, in the second step, the position of the projected image of the variable pattern from each of the plurality of exposure modules is corrected based on a predicted splicing error that may occur in the first step.

Brief Description of the Drawings

[0010]

FIG. 1

FIG. 2

FIG. 3

FIG. 4

FIG. 5

FIG. 6

FIG. 7

FIG. 8

FIG. 9

FIG. 10

FIG. 11

FIG. 12

FIG. 13

FIG. 14

FIG. 15

Mode for Carrying Out the Invention

[0011] Hereinafter, embodiments will be described in detail with reference to the drawings.

[0012] FIG. 1 is a perspective view showing an example of an exposure apparatus 1 according to the present embodiment. The exposure apparatus 1 is an apparatus that exposes the substrate 10 through an optical system. The exposure apparatus 1 passes the light modulated by the spatial light modulator 75 (see FIG. 2) through the projection optical system 7B, and forms an image of this light on a photosensitive material (resist) for exposure. At this time, the spatial light modulator 75 and the substrate 10 are provided in an optically conjugate relationship via the projection optical system 7B. The substrate 10 is, for example, a glass substrate for a display with a resist applied to its surface.

[0013] As shown in FIG. 1, the exposure apparatus 1 includes a substrate stage 4 that supports the substrate 10, an exposure apparatus main body 2 that performs scanning exposure of a predetermined exposure pattern on the substrate 10, a substrate exchange unit 3 for transporting and placing the substrate 10 on the substrate stage 4, and a control system 9 that controls these components.

[0014] Here, the direction in which the substrate stage 4 moves during the scanning exposure of the substrate 10 is indicated as the X direction (first direction). The direction orthogonal (intersecting) to the first direction is the Y direction (second direction). Also, the direction orthogonal to the X direction and the Y direction is the Z direction (third direction).

[0015] The substrate stage 4 holds the rectangular substrate 10 in plan view. The substrate stage 4 moves in the X direction with respect to the exposure apparatus main body 2 during the scanning exposure. This X direction is also referred to as the scanning direction. Also, the substrate stage 4 moves in the Y direction in order to expose a plurality of exposure regions on the substrate 10 respectively. This Y direction is also referred to as the non-scanning direction.

[0016] The exposure apparatus main body 2 includes a light source unit 6, an exposure unit 20, and an optical table 21. The exposure unit 20 includes a plurality of exposure modules 7. The exposure module 7 incorporates a spatial light modulator 75 (see FIG. 2), is supplied with light from the light source 61, and irradiates light in a preset exposure pattern.

[0017] The light source unit 6 supplies light to a plurality of exposure modules 7. As the light source unit 6, a light source unit using a laser with high coherence as the light source 61, a light source unit using a light source 61 such as a semiconductor laser type UV-LD, and a light source unit using a lens relay type retarder can be adopted. The light source 61 is, for example, a lamp or a laser diode that emits a wavelength such as 405 nm or 365 nm.

[0018] The exposure unit 20 is mounted on the optical table 21. The optical table 21 is kinematically supported at three points with respect to a column 22 provided so as to straddle a base plate 11 extending in the X direction on which the substrate stage 4 is placed. The optical table 21 is arranged such that its center of gravity is located approximately at the central portion of the base plate 11 in the X direction.

[0019] The column 22 has a pair of cross members 221 extending in the Y direction and legs 222 extending downward from both ends of the cross members 221 and connected to the base plate 11. Since a load is applied to the legs 222 on which the optical table 21 is mounted, an anti-vibration base (not shown) may be arranged at the connection portion between the base plate 11 and the legs 222. Three V-grooves are formed at appropriate positions on the upper surface of the cross member 221. The optical table 21 is placed on the pair of cross members 221 via three balls with its upper surface 21a facing horizontally in the V-grooves.

[0020] In addition to the exposure module 7, an autofocus system 23 and a second alignment measurement system 5B of the measurement system 5 as shown in FIG. 2 described later are mounted on the optical table 21. And, a plurality of first through holes 21b penetrating in the thickness direction are provided in the optical table 21 to guide exposure light onto the substrate 10. Note that the fixing method of the optical table 21 to the column 22 is not particularly limited as long as it can ensure rigidity.

[0021] As shown in FIG. 1, the base plate 11 is installed on the floor surface via a plurality of vibration isolators 111. The base plate 11 is a base extending in the X direction, and the substrate stage 4 is mounted on its upper surface 11a. On the upper surface 11a of the base plate 11, a guide guide (not shown) for guiding the substrate stage 4 along the X direction is provided.

[0022] The substrate stage 4 is for positioning the substrate 10 with high precision with respect to the exposure pattern projected through the projection optical system 7B of the exposure module 7. The substrate stage 4 is driven in six degrees of freedom (the X direction, the Y direction, the Z direction, and further the θX, θY, and θZ directions of rotation about the axes of the X direction, the Y direction, and the Z direction).

[0023] The substrate stage 4 is formed in a flat plate shape, and the substrate 10 is adsorbed and held on its upper surface 4a by a method such as vacuum adsorption. The substrate stage 4 is guided by a guide guide (not shown) on the base plate 11 and moves in the X direction, the Y direction, etc. As a moving mechanism of the substrate stage 4, for example, a linear motor method that floats the substrate stage 4 by air and moves it by magnetic force can be adopted. The position of the substrate stage 4 is measured by the interferometer 53 shown in FIG. 2 and an encoder (not shown), and is controlled by the control system 9.

[0024] The movement path of the substrate stage 4 is set to pass below the exposure unit 20. That is, the substrate stage 4 is configured to be transported to the light exposure position by the exposure unit 20 and pass through the exposure position. Then, in the process of the substrate stage 4 passing through the exposure unit 20, the exposure pattern of the image formed by the exposure unit 20 is exposed onto the substrate 10.

[0025] On the upper surface 4a of the substrate stage 4, a plurality of replacement pins (not shown) used when replacing the substrate 10 are provided so as to be able to protrude and retract in the vertical direction (Z direction). These replacement pins are arranged at a predetermined interval in the X direction and the Y direction in the region of the upper surface 4a of the substrate stage 4 where the substrate 10 is arranged.

[0026] When the exchange pin protrudes upward, the lower surface of the substrate 10 is supported by the tip of the pin. That is, the substrate 10 can be raised and lowered by moving the exchange pin in and out. The protruding length from the upper surface 4a of the exchange pin is set to a length at which at least the substrate support portion 31 of the exchange arm 3A shown in FIG. 1 can advance below the raised substrate 10.

[0027] The substrate exchange unit 3 carries out the exposed substrate 10 on the substrate stage 4 out of the substrate stage 4, and then carries the substrate 10 to be exposed onto the substrate stage 4 from which the exposed substrate 10 has been carried out. The substrate exchange unit 3 includes an exchange arm 3A for exchanging the substrate 10 on the substrate stage 4. The substrate exchange unit 3 includes, as the exchange arm 3A, a loading arm for loading the substrate 10 onto the substrate stage 4 and an unloading arm for unloading the substrate 10.

[0028] The exchange arm 3A has a substrate support portion 31 at the tip of the arm. The exchange arm 3A is provided so as to be movable in the X direction, Y direction, and Z direction. The exchange arm 3A moves in the Y direction to advance the substrate support portion 31 below the substrate 10, further raises it to support the substrate 10 from below, and then moves in the direction away from the substrate stage 4 in the Y direction to take out the substrate 10 from the substrate stage 4.

[0029] The substrate 10 is coated with a photosensitive resist and carried into the exposure apparatus 1, and is placed on a plurality of the above-described exchange pins provided on the substrate stage 4 by the exchange arm 3A. Then, the substrate 10 is adsorbed and held by the substrate holder on the substrate stage 4 by the lowering of the exchange pin.

[0030] FIG. 2 is a diagram showing the configuration of the exposure unit 20. As shown in FIG. 2, the exposure unit 20 includes a plurality of exposure modules 7 each including an illumination optical system 7A, a projection optical system 7B, and a modulation unit 7C. As shown in Fig. 1, the exposure modules 7 are arranged at predetermined intervals in the Y direction to form a module array. Further, a plurality of (four columns in Fig. 1) module arrays of the exposure modules 7 are formed with intervals in the X direction. Note that each exposure module 7 in each module array is arranged with a shift in the Y direction.

[0031] As shown in Fig. 2, the illumination optical system 7A is provided in a one-to-one relationship with the projection optical system 7B. That is, the illumination optical system 7A and the projection optical system 7B are provided in the same number. The illumination optical system 7A makes the output light output from the light source 61 of the light source unit 6 shown in Fig. 1 enter the spatial light modulator 75 as illumination light for exposure substantially uniformly.

[0032] Fig. 3 is a diagram showing the configuration of the exposure module 7. As shown in Fig. 3, the illumination optical system 7A includes an optical fiber 71, a collimating lens 721, an illumination wedge 722, a fly-eye lens 723, a main condenser lens 724, and a mirror 725.

[0033] For the optical fiber 71, for example, a quartz fiber is used. The output light (laser light L) of the light source 61 is guided by the optical fiber 71 and enters the collimating lens 721. The collimating lens 721 converts the light that exits the optical fiber 71 and spreads into parallel light and emits it. The illumination wedge 722 adjusts the intensity (power) of the light emitted from the optical fiber 71.

[0034] The light that has passed through the collimating lens 721 passes through the fly-eye lens 723 and the main condenser lens 724 and is reflected by the mirror 725, and enters the spatial light modulator 75 at a predetermined reflection angle. Note that the illumination optical system 7A and the light source unit 6 may also be considered to illuminate the spatial light modulator 75 together, and the two may be collectively referred to as the illumination optical system.

[0035] In the illumination optical system 7A, a module shutter 73 is disposed between the optical fiber 71 and the collimating lens 721. The module shutter 73 can turn on (open) / off (block) the optical path of the laser beam L emitted from the optical fiber 71 at high speed for each of the illumination optical system 7A and the projection optical system 7B.

[0036] The modulation unit 7C modulates illumination light to create a pattern (variable pattern), and includes a spatial light modulator 75 and an OFF light absorption plate 74. As an example, a digital micromirror device is adopted for the spatial light modulator 75. The spatial light modulator 75 includes a plurality of elements (mirrors in the case of a digital micromirror device). Note that the overall reflective surface of the spatial light modulator 75 is arranged to be parallel to the XY plane in the apparatus so as to be orthogonal to the optical axis of the projection optical system 7B. Therefore, the angle formed by the optical axis of the main condenser lens 724 bent by the mirror 725 and the optical axis of the projection optical system 7B is the incident angle for obliquely illuminating the spatial light modulator 75. The incident angle is set to be approximately twice the tilt angle when each mirror of the digital micromirror device is driven.

[0037] FIG. 4 is a perspective view showing the ON / OFF operation of the spatial light modulator 75. As shown in FIG. 4, each element of the spatial light modulator 75 is capable of rotating about the X axis and the Y axis.

[0038] FIG. 5 is a perspective view showing the operation of the element of the spatial light modulator 75. FIG. 5(A) shows the operation of the element when the spatial light modulator 75 is not powered on. In the state shown in FIG. 5(A), the element is not rotated about either the X axis or the Y axis.

[0039] FIG. 5(B) shows the ON state in which the spatial light modulator 75 is powered on, the element is rotated and tilted about the Y axis, and the light incident from the illumination optical system 7A is reflected toward the projection optical system 7B.

[0040] (C) of FIG. 5 shows a state in which the spatial light modulator 75 is powered on, the element is rotated and inclined around the X axis, and the light from the illumination optical system 7A is reflected not by the projection optical system 7B but toward the OFF light absorption plate 74 as indicated by reference numeral L2 in FIG. 3, showing the OFF state.

[0041] As described above, the spatial light modulator 75 can control the ON state and OFF state of each element based on control data for each element, and form a pattern (variable pattern).

[0042] Each element of the spatial light modulator 75 can be driven periodically, and the pattern (variable pattern) on the spatial light modulator 75 can be updated periodically. Since the light source 61 needs to illuminate the spatial light modulator 75 for each update period of the pattern, it is preferably a light source that emits pulses at a constant period or a light source that can emit pulses for a predetermined period. Note that the light source 61 may emit continuous light. In that case, the light emitted from the light source 61 may be regarded as substantially pulsed light by converting the continuous light into pulsed light by switching a shutter (not shown), modulating with an acousto-optic modulator (not shown), or the like.

[0043] The spatial light modulator 75 is mounted on a stage (not shown) and is finely moved in the X direction and / or Y direction while mounted on the stage (see FIG. 3). As a result, the spatial light modulator 75 is moved with respect to the illumination light, and the position of the projected image of the pattern on the substrate 10 can be changed, for example, correction for the deviation from the target value of the projection position can be performed.

[0044] As shown in FIG. 2, the projection optical system 7B is supported by the optical table 21 and is disposed below the spatial light modulator 75. The projection optical system 7B projects, exposes, and forms an image of the pattern formed on the spatial light modulator 75 on the substrate 10. As shown in FIG. 3, the projection optical system 7B includes a magnification adjustment unit 76 that adjusts the magnification for projecting one pixel of the spatial light modulator 75 with a predetermined size, and a focus adjustment unit 77 that adjusts the focus by driving the lens in the Z direction.

[0045] The magnification adjustment unit 76 includes a magnification adjustment lens 761 that reduces the image from the spatial light modulator 75, for example, from 1 / 2 times to 1 / 10 times and projects it onto the focus adjustment unit 77. The magnification adjustment unit 76 can slightly correct the projection magnification by driving the magnification adjustment lens 761 in the Z direction. Note that the projection magnification is not limited to reduction, and may also be enlargement or equal magnification. The focus adjustment unit 77 includes a plurality of focus lenses 771 that collect the reflected light from the spatial light modulator 75 (the reflected light from the ON-state mirrors) passing through the magnification adjustment unit 76 and form an optical image corresponding to the distribution of the ON-state mirrors on the substrate surface 10a, which is the focal plane.

[0046] As shown in FIG. 2, on the optical table 21, autofocus systems 23 are arranged on both sides of the projection optical system 7B with respect to the X direction. The autofocus system 23 can measure the position of the substrate 10 in the Z direction prior to the exposure process regardless of the scanning direction (X direction) of the substrate 10. The focus adjustment unit 77 drives the focus lens 771 based on the measurement result of the autofocus system 23 to adjust the focus of the pattern image of the spatial light modulator 75.

[0047] FIG. 6 is a side view showing a schematic configuration of a first alignment measurement system 5A provided on the substrate stage 4. As shown in FIG. 6, the measurement system 5 includes a first alignment measurement system 5A provided on the substrate stage 4 and a second alignment measurement system 5B provided on the optical table 21 as shown in FIG. 2.

[0048] As shown in FIG. 6, the first alignment measurement system 5A is embedded at a predetermined position of the substrate stage 4. The first alignment measurement system 5A measures the position of the substrate 10 adsorbed to a holder (not shown) with respect to the substrate stage 4. The first alignment measurement system 5A is arranged at at least four corners of the substrate stage 4. Through holes 42 penetrating in the stage thickness direction are provided at the four corner locations where the first alignment measurement system 5A is provided on the substrate stage 4.

[0049] The first alignment measurement system 5A includes a lens 511 disposed in the through hole 42 of the substrate stage 4, a light source 513 such as an LED that is disposed below the lens 511 and irradiates non-photosensitive light toward the alignment mark 12 of the substrate 10 placed at a predetermined position on the substrate stage 4, and a measurement unit 512 that detects the light reflected by the alignment mark 12.

[0050] In the first alignment measurement system 5A, when the substrate 10 is placed on the substrate stage 4, for example, the positions of the four corners of the substrate 10 are measured to measure six parameters (position information) including the X-direction position, Y-direction position, rotation amount (angle in the θZ direction), reduction / enlargement ratio in the X direction, reduction / enlargement ratio in the Y direction, and orthogonality.

[0051] Note that the arrangement of the first alignment measurement system 5A on the substrate stage 4 is not limited to the four corners as described above. For example, when it occurs due to a process such as the non-linear shape of the substrate 10, a corresponding number of first alignment measurement systems 5A, such as 4 locations × 4 columns, are arranged.

[0052] The first alignment measurement system 5A is an off-axis alignment measurement system. The first alignment measurement system 5A measures the alignment mark 12 of the substrate 10 based on pixels such as a CCD or CMOS provided in the measurement unit 512.

[0053] Also, as shown in FIG. 2, the substrate stage 4 has a calibration measurement system 52, an interferometer 53 that measures the position of the substrate stage 4, and an illuminance meter 54. The calibration measurement system 52, the interferometer 53, and the illuminance meter 54 are acquisition units that acquire information regarding the light of the exposure unit 20 during or before the exposure of the substrate 10.

[0054] The calibration measurement system 52 is used for measuring and calibrating the positions of various modules. The calibration measurement system 52 is also used for calibrating the second alignment measurement system 5B disposed on the optical surface plate 21.

[0055] Thus, in the exposure apparatus 1 of the present embodiment, by measuring the imaging position of the pattern generated by the spatial light modulator 75 that performs exposure with the first alignment measurement system 5A in the substrate stage 4, the position of the substrate stage 4 can be measured based on the image positions of the interferometer 53 that measures the position of the substrate stage 4 and the second alignment measurement system 5B, and the position of the first alignment measurement system 5A on the substrate stage 4 with respect to the imaging system can be measured.

[0056] Further, as shown in FIG. 2, on the optical table 21, the second alignment measurement system 5B is disposed at a position above the substrate stage 4. The second alignment measurement system 5B measures the position of the substrate 10 adsorbed to a holder (not shown) with respect to the substrate stage 4.

[0057] The second alignment measurement system 5B includes a lens 551 disposed below the optical table 21, a light sensor 552 that irradiates non-photosensitive measurement light upward of the lens 551 toward the alignment mark 12 of the substrate 10 placed at a predetermined position on the substrate stage 4, and a measurement unit (not shown) that detects the light reflected by the alignment mark 12.

[0058] Similar to the first alignment measurement system 5A, when the substrate 10 is placed on the substrate stage 4, the second alignment measurement system 5B measures six parameters (position information), namely, the X-direction position, Y-direction position, rotation amount (angle in the θZ direction), reduction / enlargement magnification in the X direction, reduction / enlargement magnification in the Y direction, and orthogonality, regarding the substrate 10.

[0059] In the X direction, the second alignment measurement system 5B is provided on the optical table 21 away from the illumination optical system 7A. The substrate stage 4 moves the alignment mark 12 on the substrate 10 to a position where the second alignment measurement system 5B can measure it. By driving the substrate stage 4, the second alignment measurement system 5B can measure the alignment mark 12 disposed on the substrate 10, so that measurement can be performed on substantially the entire surface of the substrate 10.

[0060] A method for exposing the substrate 10 in the exposure apparatus 1 having the above configuration will be described. First, when a recipe for exposure is input into the exposure apparatus 1, the control system 9 shown in FIG. 1 selects mask data for exposure from the mask pattern server. Then, the control system 9 divides the mask data according to the number of exposure modules 7, generates the divided mask data, and stores it in the memory.

[0061] At this time, since the spatial light modulator 75 updates 4M pixels at an update rate of approximately 10 kHz, for example, the memory stores a large amount of mask data at high speed. The control system 9 transmits the mask data stored in the memory to each of the plurality of exposure modules 7. When receiving the mask data, the exposure module 7 performs various exposure preparations. That is, the exposure module 7 loads the received mask data into the spatial light modulator 75.

[0062] Next, the exposure apparatus 1 measures and calibrates the illuminance (light information) according to the recipe. For example, the illuminance measuring device 54 disposed on the substrate stage 4 measures the illuminance of the light from the illuminance measurement pattern generated on the spatial light modulator 75. The exposure apparatus 1 uses each of the plurality of exposure modules 7 and adjusts the illuminance using the measurement result of the measured illuminance so that there is no illuminance difference between the exposure modules by the illumination wedge 722 disposed in the illumination optical system 7A.

[0063] Next, as shown in FIG. 2, the exposure apparatus 1 measures the exposure positions of the second alignment measurement system 5B disposed on the optical table 21, the illumination optical system 7A, and the projection optical system 7B by the calibration measurement system 52. That is, the calibration measurement system 52 measures the arrangements of the illumination optical system 7A and the projection optical system 7B and the position of the second alignment measurement system 5B (microscope), and calculates the relative positional relationship between the illumination optical system 7A and the projection optical system 7B and the second alignment measurement system 5B (microscope).

[0064] The position of the first alignment measurement system 5A provided on the substrate stage 4 is measured based on the pixels of the camera of the measurement unit 512 shown in FIG. 6. The first alignment measurement system 5A measures using the exposure pattern (for example, a test pattern) of the spatial light modulator 75 projected by the projection optical system 7B. The exposure apparatus 1 calculates the relative positional relationship between the illumination optical system 7A and the projection optical system 7B and the first alignment measurement system 5A based on the measurement result.

[0065] Next, as shown in FIG. 6, the substrate exchange unit 3 places the substrate 10 for exposure on the substrate stage 4. At this time, the first alignment measurement system 5A observes and measures the alignment mark 12 of the substrate 10, and calculates the relative position of the first alignment measurement system 5A with respect to the apparatus with respect to the substrate 10.

[0066] Alternatively, the substrate stage 4 moves below the second alignment measurement system 5B, and the second alignment measurement system 5B observes and measures the alignment mark 12 of the substrate 10, and calculates the relative position of the second alignment measurement system 5B with respect to the apparatus with respect to the substrate 10.

[0067] Thereby, based on the relative positional relationship between the illumination optical system 7A and the projection optical system 7B and the alignment measurement system calculated in advance, and the relative position of the alignment measurement system with respect to the substrate 10, it is possible to know at which position on the substrate 10 the pattern is exposed, that is, the projection position.

[0068] In this operation, the deviation amount between the position to be exposed on the recipe and the position where the pattern is exposed on the substrate 10 based on the arrangement relationship between the current substrate 10 and the projection optical system 7B can be known. In the present embodiment, in order to correct this deviation amount, the control system 9 corrects the exposure data. Note that the control system 9 may not only correct with the exposure data, but also move the substrate stage 4 itself to reduce the deviation amount and then generate correction data. In this case, the correction amount of the data correction by the control system 9 can be reduced.

[0069] Note that the control system 9 may move the spatial light modulator 75 to change the exposure position on the substrate 10. The control system 9 may correct the deviation amount by data correction and the movement of the substrate stage 4, or may correct the deviation amount by data correction and the movement of the spatial light modulator 75, or may correct the deviation amount by a combination of data correction, the movement of the substrate stage 4, and the movement of the spatial light modulator 75.

[0070] In the exposure apparatus 1, it is also possible to calculate the correction value in units of panels such as liquid crystal televisions on the substrate 10 and obtain the correction value of the substrate stage 4. When correcting the substrate 10 partially in this way, in most cases, the correction values are different for each of the illumination optical system 7A and the projection optical system 7B. The correction value is calculated for each of the illumination optical system 7A and the projection optical system 7B, and the digital exposure data to be exposed is corrected.

[0071] The control system 9 is connected to each part of the exposure apparatus 1 (measurement system 5, substrate stage 4, optical systems (illumination optical system 7A, projection optical system 7B, and modulation unit 7C)), and has a control unit that performs transmission and reception of measurement values and commands for control operations to each part of the exposure apparatus 1. Further, the control system 9 has a data generation unit that generates digital exposure data (control data) for driving the spatial light modulator 75.

[0072] The control unit has a function of correcting digital exposure data based on the measurement result of the measurement system 5. The correction data of the digital exposure data is stored in the memory of the control system 9. This control system 9 is incorporated in, for example, a personal computer or the like. The exposure apparatus 1 performs superimposed exposure on the substrate 10 on the substrate stage 4 based on the correction data of the digital exposure data transmitted from the control system 9 and the recipe information.

[0073] In the operation of performing data correction on the substrate stage 4, it is also possible to perform calibration or the like during data correction. For example, the control system 9 uses the light information such as the illuminance measured by the illuminance measuring device 54 or the calibration measurement system 52 provided on the substrate stage 4 during exposure as correction data, and can adjust the illuminance of the exposure module 7 based on this correction data. The light information at this time is transmitted to the exposure module 7 before the start of data correction on the substrate stage 4. It is also possible to transmit the above light information to the exposure module 7 while data correction is being performed on the substrate stage 4.

[0074] In addition, in the exposure apparatus 1, measurements related to the exposure position and data correction are performed in advance in combination with the arrangement measurement of the plurality of illumination optical systems 7A and projection optical systems 7B, and then illuminance measurement, correction of the bending (straightness) of a moving mirror (not shown) provided on the substrate stage 4, etc. are performed. Thus, it is possible to calculate the correction value based on the data and transmit the correction data during the exposure operation without affecting the tact considering the alignment of the substrate 10 and the arrangement of the modules.

[0075] A predetermined exposure pattern is formed in advance on the substrate 10 to be exposed by the exposure apparatus 1. That is, the exposure apparatus 1 performs exposure on the substrate 10 for the second and subsequent exposures (hereinafter referred to as 2nd exposure). In the present embodiment, the first exposure (hereinafter referred to as 1st exposure) is performed by the exposure apparatus 8 that exposes using the mask shown in FIG. 7. That is, the maskless exposure apparatus 1 using the spatial light modulator 75 supports and moves the substrate 10 that has been 1st exposed by the mask exposure apparatus 8 on the substrate stage 4, and performs superimposed exposure that becomes the 2nd exposure on the substrate 10.

[0076] FIG. 7 is a perspective view showing a schematic configuration of the exposure apparatus 8. As shown in FIG. 7, the exposure apparatus 8 exposes a pattern (fixed pattern) formed on a mask M (see FIG. 8) onto a substrate 10. The exposure apparatus 8 includes a substrate stage 80 that supports and moves the substrate 10, a light source unit 81 that irradiates light, an illumination optical system 82, a mask stage 83 that supports and moves the mask M, and a projection optical system 84.

[0077] FIG. 8 is a plan view showing a scan layout of the substrate 10 by the exposure apparatus 8. As shown in FIG. 8, the exposure apparatus 8 exposes a first exposure pattern 85 formed by the projection optical system 84 via the mask M onto the substrate 10. At this time, the mask M and the substrate 10 are provided in an optically conjugate relationship via the projection optical system 84. The first exposure pattern 85 has a first exposure portion 85A arranged at a predetermined interval in the Y direction as a first row, and a second exposure portion 85B spaced apart in the X direction from the first row and arranged at a predetermined interval in the Y direction as a second row.

[0078] The first exposure portion 85A and the second exposure portion 85B are each formed in a trapezoid shape having two sides parallel to the Y direction. The adjacent end portions (hypotenuse portions) of the first exposure portion 85A and the second exposure portion 85B in the Y direction are formed in opposite directions facing each other in the X direction. Also, the adjacent end portions (hypotenuse portions) of the first exposure portion 85A and the second exposure portion 85B in the Y direction are arranged so as to overlap each other in the Y direction.

[0079] When performing exposure (scanning exposure) while scanning the substrate 10 in the X direction with respect to the first exposure portion 85A and the second exposure portion 85B, a joint portion 85C (a region sandwiched by two lines in FIG. 8) that is repeatedly exposed (double exposure) is formed. In this way, the exposure apparatus 8 exposes the substrate 10 without gaps by joining the first exposure portion 85A and the second exposure portion 85B formed by the projection optical system 84 with the joint portion 85C.

[0080] In the exposure apparatus 8, while repeating a scan operation of relatively moving the substrate stage 80 and the mask stage 83 in the X direction with respect to the projection optical system 84 and a step movement of relatively moving the substrate stage 80 in the Y direction or the X direction with respect to the mask stage 83, the entire surface of the substrate 10 is exposed. Note that, as shown in FIG. 8, the mask M is not limited to a size that is 1 / 4 times that of the substrate 10. For example, the mask M can also have a size that is 1 / 6 times or 1 / 8 times.

[0081] FIG. 9 is a plan view showing a scan layout of the substrate 10 by the maskless exposure apparatus 1. As shown in FIG. 9, in the maskless exposure apparatus 1, while moving the substrate 10 in the X direction, the second exposure pattern 90 is superposed and exposed by the projection optical system 7B on four exposure regions R1 of the substrate 10 where the first exposure pattern 85 has been exposed. Note that the exposure region R2 of the substrate 10 shown in FIG. 9 indicates a region where the second exposure pattern 90 is superposed and exposed on the first exposure pattern 85.

[0082] Among the substrate 10 shown in FIG. 9, the exposure region R1 in the right half of the drawing shows the exposure result of the 1st exposure by the exposure apparatus 8, and the exposure region R2 in the left half of the drawing shows the exposure result of the 2nd exposure by the exposure apparatus 1. The exposure apparatus 1 has no restrictions on the size of the mask M or on the apparatus like the exposure apparatus 8, and the second exposure pattern 90 can be freely laid out. The second exposure pattern 90 exposes the entire surface of the substrate 10 by connecting the ends of the second exposure patterns 90 that are adjacent to each other in the Y direction and are rectangular in plan view.

[0083] Incidentally, in the step-and-scan type exposure apparatus 8, exposure is performed by synchronously moving the mask stage 83 on which the mask M is placed and the substrate stage 80 on which the substrate 10 is placed in the X direction (scanning direction). At this time, as the mask M and the substrate 10 increase in size, it is becoming difficult to control the trajectories of the mask M and the substrate 10 to match with high precision. As a result, a deviation (feed error) occurs between the trajectory of the mask M and the trajectory of the substrate 10. This feed error of the exposure apparatus 8 is a factor causing exposure deviation (seam unevenness) at the joint 85C between the first exposure portion 85A in the first column and the second exposure portion 85B in the second column of the first exposure pattern 85. In addition, slight differences in optical characteristics between the projection optical system 84 that exposes the first exposure portion 85A shown in FIGS. 8 and 9 and the projection optical system 84 that exposes the second exposure portion 85B, and mechanical drifts, vibrations, etc. due to temperature changes in each projection optical system 84 also cause seam unevenness. Next, this countermeasure will be described. Before that, the occurrence state of seam unevenness will be briefly described.

[0084] FIG. 10 is an explanatory diagram showing the state of the joint portion of the exposure image formed on the substrate 10 by the exposure apparatus 8. In FIG. 10, the state at the joint portion of the exposure image formed on the substrate 10 by scanning and exposing the line-shaped patterns PM1, PM2, and PM3 that are connected in one line in the Y direction on the mask M in the exposure apparatus 8 is exaggeratedly shown. FIG. 10(A) shows the arrangement of the patterns PM1 to PM3 of the mask M, the first exposure portion 85A, and the second exposure portion 85B at a certain time during the scanning exposure, and FIG. 10(B) exaggeratedly shows the state of each exposure image (resist image) PM1', PM2', and PM3' of the patterns PM1 to PM3 exposed on the substrate 10 at that time.

[0085] In Fig. 10(A), if each of the first exposure portion 85A and the second exposure portion 85B is taken as a projection area (projection image) 85A, 85B projected onto the substrate 10 via each respective projection optical system 84, most of the stitching errors occur when the relative positional relationship of the projection areas 85A, 85B that are stitched-exposed in the Y direction is slightly shifted in the XY directions from the specified state. Here, as an example, assume that the projection area 85A is shifted by ΔXd in the X direction and ΔYd in the Y direction from the specified position.

[0086] When such a relative positional shift (ΔXd, ΔYd) occurs between the two projection areas (projection images) 85A, 85B to be joined, as shown in Fig. 10(B), the exposure images PM1´, PM2´, PM3´ exposed on the projection area 85A side and the exposure images PM1´, PM2´, PM3´ exposed on the projection area 85B side are displaced, and within the stitching portion 85C on the substrate 10, the relatively displaced images are over-exposed, so that changes in line width, changes in pattern center position, or changes in shape occur. Such stitching errors can occur in each of the plurality of stitching portions 85C set at regular intervals in the Y direction.

[0087] As described above, stitching errors (stitching unevenness) occur in the entire pattern of the first layer (1st layer) formed on the substrate 10 by the exposure apparatus 8 using the stitching exposure method. Looking at it another way, this means that pattern portions with slightly changed positions or slightly changed shapes occur in the entire pattern. When exposing the pattern for the second layer to be superposed on the first layer by the maskless exposure apparatus 1, the pattern data is generally created based on the pattern of the mask M for the first layer. Therefore, if there are no stitching errors (stitching unevenness) outside the allowable range in the entire pattern of the first layer on the substrate 10, even in the case of alignment exposure by the maskless exposure apparatus 1 based on the pattern data created for the second layer, if the alignment accuracy and the position accuracy of the stages are good, sufficient superposition accuracy can be obtained for any part in the entire pattern on the substrate 10.

[0088] In the following description, "correcting the splicing error (splicing unevenness)" and "splicing error correction" are described, but this also means correcting so that the relative positional deviation error (overlay error) when overlaying and exposing a new pattern on the pattern formed on the substrate 10 becomes small.

[0089] FIG. 11 is an explanatory diagram exaggerating the relationship between the first exposure pattern 85 by the exposure apparatus 8 and the second exposure pattern 90 of the maskless exposure apparatus 1. As shown in FIG. 11(A), the first exposure pattern 85 has a joint portion 85C where the first exposure portion (projection region) 85A and the second exposure portion (projection region) 85B are joined. The plurality of circles shown in FIG. 11(B) indicate the center positions of the respective projection images (that is, the center coordinates of each exposure module of the exposure apparatus 8) by the projection optical system 84 that generates each of the first exposure portion (projection region) 85A and the second exposure portion (projection region) 85B. The circles shown in FIG. 11(B) are assumed to have a splicing error and to be displaced only in the X direction (scanning movement direction) relatively. For example, between the projection regions 85A and 85B, they are displaced by ΔXd as described with reference to FIG. 10.

[0090] As shown in FIG. 11(C), the maskless exposure apparatus 1 exposes the second exposure pattern 90 overlaid on the first exposure pattern 85. The plurality of circles shown in FIG. 11(C) indicate the center positions of the projection images of the spatial light modulator 75 projected by each of the plurality of projection optical systems 7B of the maskless exposure apparatus 1 that exposes the second exposure pattern 90 (that is, the center coordinates of each exposure module 7 of the maskless exposure apparatus 1). At least one of the pattern images (divided images) exposed by each projection optical system 7B in the second exposure pattern 90 is formed at a position corresponding to the inside of the joint portion 85C in the first exposure pattern 85.

[0091] As shown in (C) of FIG. 11, for example, the pattern image projected by the exposure module 7 at the non-joining part within the projection area 85A and the pattern image projected by the exposure module 7 at the non-joining part within the projection area 85B are set such that their positions are shifted in the X direction by ΔXd. Also, as described with reference to FIG. 10 above, the pattern image projected by the exposure module 7 within the joining part 85C is such that the center position of the pattern formed on the substrate 10 is shifted in the X direction by ΔXd / 2. Therefore, the projection image from the module 7 that exposes the joining part 85C is also position-corrected by ΔXd / 2.

[0092] As shown in FIG. 1, the maskless exposure apparatus 1 includes a plurality of exposure modules 7 juxtaposed in the Y direction. That is, at least one of the plurality of exposure modules 7 is arranged to expose the joining part 85C. The exposure width 101 in the Y direction of the projection area by the exposure module 7 that exposes the joining part 85C is smaller than the exposure width 102 of the joining part 85C. Specifically, the exposure module 7 that exposes the joining part 85C sets the projection magnification of the projection optical system 7B such that the exposure width 101 is smaller than the exposure width 102 of the joining part 85C. Thereby, the exposure module 7 that exposes the joining part 85C exposes the second exposure pattern 90 on the joining part 85C, and can correct the joining unevenness of the joining part 85C. That is, within the entire first exposure pattern 85 already formed on the substrate 10, the overlay error due to the local relative position shift caused by the joining error (joining unevenness) is corrected. Note that the exposure width 101 in the Y direction by each exposure module of the maskless exposure apparatus 1 that exposes the second exposure pattern 90 is smaller than the exposure width 100 in the Y direction excluding the joining part 85C within the projection area by one of the projection optical systems 84 of the exposure apparatus 8 that exposes the first exposure pattern 85.

[0093] The first exposure pattern 85 has a plurality of joints 85C at a first interval P1 in the non-scanning direction (Y direction) orthogonal to the scanning direction (X direction) in the plane direction along the substrate 10. Further, the second exposure pattern 90 has a plurality of divided images of the second exposure pattern 90 at a second interval P2 smaller than the first interval P1 in the same non-scanning direction (Y direction). That is, the plurality of exposure modules 7 are arranged at a second interval P2 smaller than the first interval P1 in the non-scanning direction (Y direction). Note that the second interval P2 is smaller than the exposure width 102 of the joint 85C. The second interval P2 in the present embodiment is an interval of 1 / 2 of the exposure width 102 of the joint 85C, but an interval smaller than that may also be used.

[0094] The maskless exposure apparatus 1 performs an alignment operation before exposing the second exposure pattern 90. The alignment operation is an operation performed before the second exposure, and measures the position of the first exposure through the alignment mark 12, so as to overlap the exposure position of the second exposure with the exposure position of the first exposure. The maskless exposure apparatus 1 corrects the exposure positions of the plurality of exposure modules 7 based on the measurement results of the measurement system 5 (for example, the first alignment measurement system 5A and the second alignment measurement system 5B).

[0095] FIG. 12 is an explanatory diagram showing the relationship between the first exposure pattern 85 by the exposure apparatus 8 and the alignment mark 120 formed around it. FIG. 13 is an explanatory diagram showing the alignment mark 12 formed around the substrate 10. The alignment mark 12 indicated by the circle in FIG. 13 is measured by the first alignment measurement system 5A provided on the substrate stage 4 as shown in FIG. 6 described above, and the relative position of the substrate stage 4 with respect to the substrate 10 is calculated.

[0096] As shown in Fig. 12(A), the first exposure pattern 85 has a joint portion 85C where the first exposure portion 85A and the second exposure portion 85B are joined together. The alignment marks 120 indicated by circles in Fig. 12(B) are formed in pairs on both sides of each exposure portion simultaneously with the first exposure pattern 85 during the first exposure. The alignment marks 120 are measured, for example, by the second alignment measurement system 5B provided on the optical table 21.

[0097] By measuring the relative coordinates of a pair of alignment marks 120 formed across each exposure portion of the first exposure pattern 85, the position in the X direction, the position in the Y direction, the angle θ in the θZ direction, the projection magnification β, etc. of the first exposure pattern 85 can be calculated, and the correction value of the second exposure pattern 90 of the exposure module 7 can be calculated.

[0098] Also, in the example shown in Fig. 12(B), one or more alignment marks 120 are formed on the joint portion 85C, and the position of the joint portion 85C can also be measured. In the example shown in Fig. 12(C), although no alignment mark 120 is formed on the joint portion 85C, the position of the joint portion 85C can be estimated and calculated from the relative coordinates of a pair of alignment marks 120 formed across each exposure portion of the first exposure pattern 85.

[0099] As described above, the maskless exposure apparatus 1 corrects the exposure positions of the plurality of exposure modules 7 based on the measurement results of the measurement system 5 (for example, the first alignment measurement system 5A and the second alignment measurement system 5B). As one of the correction methods, there is a method of correcting the pattern data sent to the spatial light modulator 75 based on the measured deviation amount. Specifically, for each spatial light modulator 75, correction is performed to shift the scanning direction of the pattern data to the + side or the - side.

[0100] Also, as another correction method, based on the measured deviation amount, for each exposure module 7, correction may be performed by moving the optical member in the projection optical system 7B to adjust the (exposure start) position of the projection area on the substrate 10 for each exposure module 7.

[0101] As yet another correction method, based on the measured deviation amount, for each exposure module 7, as a measurement method for moving the spatial light modulator 75 to adjust the position of the projection area on the substrate 10 for each exposure module 7, it may be acceptable. In this way, the correction method can mechanically, optically, and furthermore, add data correction including the spatial light modulator 75. However, generally, since it is difficult to convert a huge amount of data at high speed in a short time from the measurement of the deviation amount until the start of exposure, it is mainly mechanically and optically corrected.

[0102] Note that by adopting at least one measurement method among the above-described correction methods, the start of exposure can be adjusted for each exposure module 7, and the second exposure pattern 90 can be superimposed and exposed with respect to the position where the joint portion 85C is exposed.

[0103] Although the embodiments of the present invention have been described above, the correspondence between the present invention and the above embodiments will be supplemented and described here.

[0104] (1) In the above embodiment, the exposure apparatus 1 that exposes the second exposure pattern 90 by superimposing it on the first exposure pattern 85 while moving the substrate 10 on which the first exposure pattern 85 in which the first exposure portion 85A and the second exposure portion 85B are joined is exposed in the scanning direction, includes a plurality of exposure modules 7 that divide and expose the second exposure pattern 90. The plurality of exposure modules 7 include a spatial light modulator 75 having a plurality of elements and in which the plurality of elements are controlled according to the second exposure pattern 90, an illumination optical system 7A that illuminates the spatial light modulator 75, and a projection optical system 7B that projects an image of the spatial light modulator 75 controlled according to the second exposure pattern 90 onto the substrate 10. At least one of the plurality of exposure modules 7 exposes the joint portion 85C where the first exposure portion 85A and the second exposure portion 85B are joined.

[0105] In the maskless exposure apparatus 1 configured as described above, when the second exposure pattern 90 is superimposed and exposed while moving the substrate 10 on which the first exposure pattern 85 has been exposed in the scanning direction (X direction), with respect to the joint portion 85C where the first exposure portion 85A and the second exposure portion 85B in the first exposure pattern 85 are joined together, a partial projection image of the second exposure pattern 90 projected from at least one of the plurality of exposure modules 7 including the spatial light modulator 75 can be finely exposed with high precision. As a result, correction can be made for the positional deviation due to the joint unevenness (joint error) generated in the first exposure pattern 85, and exposure can be performed with a reduced superimposition error for each local portion of the entire second exposure pattern 90.

[0106] (2) Also, in the above embodiment, the exposure width 101 of the exposure module 7 that exposes the joint portion 85C is smaller than the exposure width 102 of the joint portion 85C.

[0107] According to such a configuration, the superimposed exposure of the second exposure pattern 90 in which local positional deviations such as the deviation of the center position and the shape change of the pattern on the substrate 10 caused by joint unevenness in the joint portion 85C are corrected becomes easy. Also, even in non-joint portions other than the joint portion 85C on the substrate 10, fine superimposed exposure can be performed in response to local positional deviations in the first exposure pattern 85.

[0108] (3) Also, in the above embodiment, for the exposure module 7 that exposes the joint portion 85C, the size of the spatial light modulator 75 and the projection magnification of the projection optical system 7B are set such that the exposure width 101 is smaller than the exposure width 102 of the joint portion 85C.

[0109] According to such a configuration, by setting the size of the spatial light modulator 75 and the projection magnification of the projection optical system 7B, the exposure width 101 of the exposure module 7 that exposes the joint portion 85C can be easily made smaller than the exposure width 102 of the joint portion 85C.

[0110] (4) Further, in the above-described embodiment, the plurality of exposure modules 7 are arranged at a second interval P2 that is smaller than a first interval P1 in which a plurality of joints 85C are formed on the first exposure pattern 85 in a non-scanning direction orthogonal to the scanning direction.

[0111] According to such a configuration, since the second interval P2 of the projection area of the spatial light modulator 75 by the exposure modules 7 adjacent to each other in the Y direction is smaller than the first interval P1 of the joints 85C, the inside of the joints 85C can be exposed by one or more projection images of the spatial light modulator 75.

[0112] (5) Further, in the above-described embodiment, before exposing the substrate 10 with the plurality of exposure modules 7, it includes a measurement system 5 that measures the position of the joint 85C, and a control unit (control system 9) that controls the exposure position of the second exposure pattern 90 by the plurality of exposure modules 7 based on the measurement result of the measurement system 5.

[0113] According to such a configuration, the start of exposure can be adjusted for each exposure module 7, and the second exposure pattern 90 can be overlaid and exposed at the position where the joint 85C is exposed.

[0114] (6) Further, in the above-described embodiment, it includes a data generation unit (control system 9) that generates control data for controlling a plurality of elements according to the second exposure pattern 90, and the control unit controls at least one of the projection optical system 7B, the spatial light modulator 75, and the data generation unit based on the measurement result of the measurement system 5, and controls the exposure position of the second exposure pattern 90 by the plurality of exposure modules 7.

[0115] According to such a configuration, at least one of the projection optical system 7B, the spatial light modulator 75, and the data generation unit is controlled according to the measurement result by the measurement system 5, the exposure position is controlled for each exposure module 7, and the pattern portions of the second exposure pattern 90 divided into a plurality are exposed on the substrate 10 respectively, thereby reducing the overlay error caused by the positional deviation in the first exposure pattern 85 on the substrate 10 resulting from stitching unevenness.

[0116] (7) Also, in the above embodiment, the control unit corrects the control data of the data generation unit based on the measurement result of the measurement system 5.

[0117] According to such a configuration, by correcting the control data (digital exposure data) of the spatial light modulator 75, the exposure position of the exposure module 7 can be controlled.

[0118] (8) Also, in the above embodiment, the control unit corrects at least one of the projection position, rotation, and projection magnification of the second exposure pattern 90 by the projection optical system 7B based on the measurement result of the measurement system 5.

[0119] According to such a configuration, by driving the optical member of the projection optical system 7B, at least one of the projection position, rotation, and projection magnification of the second exposure pattern 90 can be corrected, and the exposure position of the exposure module 7 can be controlled.

[0120] (9) Also, in the above embodiment, the measurement system 5 includes a first alignment measurement system 5A and a second alignment measurement system 5B that measure the alignment marks 12, 120 formed on the substrate 10 together with the first exposure pattern 85.

[0121] According to such a configuration, based on the measurement result of the alignment marks 12, 120, the exposure position of the exposure module 7 can be corrected.

[0122] (10) Further, in the above-described embodiment, there is an exposure apparatus 1 that exposes the second exposure pattern 90 while moving the substrate 10 on which the first exposure pattern 85 has been exposed in the scanning direction, and overlaps the second exposure pattern 90 with the first exposure pattern 85. The exposure apparatus 1 includes a plurality of exposure modules 7 that divide and expose the second exposure pattern 90, a detection unit that detects a predetermined region in the first exposure pattern 85 where the exposure state is different from the exposure states of other regions, and an adjustment unit that adjusts the exposure modules 7 based on the detection result of the detection unit. The plurality of exposure modules 7 include a spatial light modulator 75 having a plurality of elements and in which the plurality of elements are controlled according to the second exposure pattern 90, an illumination optical system 7A that illuminates the spatial light modulator 75, and a projection optical system 7B that projects an image of the spatial light modulator 75 controlled according to the second exposure pattern 90 onto the substrate 10. At least one of the plurality of exposure modules 7 adjusted by the adjustment unit exposes the predetermined region.

[0123] Here, the predetermined region in this embodiment is particularly the splicing portion 85C in the first exposure pattern 85. However, even outside the splicing portion 85C, it includes a region where the positional deviation of the pattern of the first layer (underlayer) is conspicuous on the substrate 10 and a region where the exposure state (imaging state) is different from other regions. Further, the detection unit that detects a predetermined region in the first exposure pattern 85 where the exposure state is different from the exposure states of other regions includes the measurement system 5 described above and the control system 9 that detects the predetermined region according to the measurement result of the measurement system 5. Further, the adjustment unit includes a portion that can perform mechanical, optical, and further data correction under the control of the control system 9 described above and the control system 9. In the exposure apparatus 1 having such a configuration, when the second exposure pattern 90 is overlapped and exposed while moving the substrate 10 on which the first exposure pattern 85 has been exposed in the scanning direction, a part of the second exposure pattern 90 can be accurately positioned and exposed from at least one of the plurality of exposure modules 7 including the spatial light modulator 75 so as to be overlapped with a pattern in a region where the exposure state on the substrate 10 is different from other regions.

[0124] In the above-described embodiment, it was explained that the first exposure is performed by the exposure apparatus 8 that performs exposure using a mask, and the second exposure is performed by the maskless exposure apparatus 1. However, the first exposure may be performed by the maskless exposure apparatus 1, and the second exposure may be performed by the exposure apparatus 8 that performs exposure using a mask. In this case, the following configuration may be adopted.

[0125] (11) An exposure apparatus 1 that exposes a first exposure pattern while moving a substrate 10 in a scanning direction, the exposure apparatus 1 including a spatial light modulator 75 having a plurality of elements and in which the plurality of elements are controlled according to the first exposure pattern 85, an illumination optical system 7A that illuminates the spatial light modulator 75, and a projection optical system 7B that projects an image of the spatial light modulator 75 controlled according to the first exposure pattern 85 onto the substrate 10; an exposure module 7; a receiving unit that receives, before the first exposure pattern is exposed onto the substrate 10, information regarding another mask exposure apparatus 8 that exposes a second exposure pattern over the first exposure pattern with respect to the substrate 10 on which the first exposure pattern has been exposed; and an adjusting unit that adjusts the exposure module 7 based on the information received by the receiving unit.

[0126] Here, the first exposure pattern is formed by the first exposure of the maskless exposure apparatus 1. Also, here, the second exposure pattern is formed by the second exposure of the exposure apparatus 8. Further, the receiving unit includes a control system 9 (at least a receiver) of the maskless exposure apparatus 1 that can communicate with the exposure apparatus 8. Also, the adjusting unit includes a portion that can mechanically, optically, and further, perform data correction under the control of the above-described control system 9 and the control system 9. According to this configuration, the first exposure is performed by the maskless exposure apparatus 1, and the second exposure is performed by the exposure apparatus 8. When it is known that exposure unevenness (seam error) occurs in the exposure (second exposure) of the exposure apparatus 8, at the stage of the first exposure by the maskless exposure apparatus 1, exposure unevenness is deliberately generated for exposure. However, the position of the projection image of the exposure pattern in the first exposure is corrected in a state where the exposure unevenness generated in the second exposure of the mask exposure apparatus 8 is predicted. For example, when the second exposure is performed by the exposure apparatus 8, as shown in FIG. 10(A), the projection area 85A is displaced by ΔYd in the Y direction from the specified position, and the pattern center position at the joint 85C is displaced in the Y direction. Therefore, when the first exposure is performed by the maskless exposure apparatus 1, the pattern center position of the area that will overlap the joint 85C may be displaced in the Y direction. That is, the overlapping error and position error that occur as exposure unevenness in total are eliminated by the second exposure by the exposure apparatus 8. The maskless exposure apparatus 1 receives information that the second exposure is performed by the exposure apparatus 8 before starting the first exposure, further position information of the joint portion when exposed by the exposure apparatus 8, and information on the prediction of exposure unevenness at the joint portion (information on the predicted seam error). The maskless exposure apparatus 1 includes a receiving unit that receives such a series of information. Based on the information obtained by the receiving unit, the maskless exposure apparatus 1 creates data for controlling, for example, the spatial light modulator 75 and / or controls the exposure module 7 to deliberately generate exposure unevenness (position displacement of the exposure image corresponding to the seam error).

[0127] (12) Further, in the above embodiment, the receiving unit receives information regarding the position on the substrate 10 where a part of the first exposure portion and a part of the second exposure portion are joined and exposed by the exposure apparatus, and the adjustment unit adjusts the exposure module 7 based on the information.

[0128] In the maskless exposure apparatus 1 configured as described above, when performing second exposure with the exposure apparatus 8 that performs exposure using a mask, the position of the projection image of the first exposure pattern is corrected in a state where exposure unevenness due to stitching errors or the like that may occur between the first exposure portion and the second exposure portion is predicted, and first exposure is performed. By doing so, it is possible to suppress a decrease in the alignment accuracy due to exposure unevenness during the second exposure. Here, the exposure unevenness is the same as in the previous first embodiment, and in addition to the stitching error (stitching unevenness), it includes exposure amount unevenness in which the exposure amount varies in a partial region on the substrate 10, focus unevenness in which the focusing of the projection image on the surface of the substrate 10 varies partially, and the like. Exposure amount unevenness and focus unevenness cause the pattern line width formed on the substrate 10 to deviate from the design value (target value).

[0129] (13) Further, the device manufacturing method of the above embodiment includes exposing the substrate 10 using the exposure apparatus 1 and developing the exposed substrate 10.

[0130] According to such a configuration, by developing the substrate 10 exposed using the exposure apparatus 1, it is possible to manufacture a device with reduced stitching unevenness (alignment error) at the joint portion 85C.

[0131] (14) Further, the manufacturing method of the flat panel display of the above embodiment includes exposing the substrate 10 for the flat panel display using the exposure apparatus 1 and developing the exposed substrate 10.

[0132] According to such a configuration, by developing the substrate 10 exposed using the maskless exposure apparatus 1, it is possible to manufacture a flat panel display in which the alignment error of the pattern is uniformly reduced for the entire display pixel portion and the peripheral circuit portion regardless of the presence or absence of stitching unevenness. Note that the electronic device formed on the substrate 10 is not limited to a display panel such as a flat panel display, and may be a large multilayer wiring substrate on which fine wiring patterns such as copper and aluminum are formed, a color filter plate for a liquid crystal panel, or a substrate on which a large number of sensor chips (functional elements) are formed together.

[0133] As described above, an embodiment of the present invention has been described in detail with reference to the drawings. However, the specific configuration is not limited to the above, and various design changes and the like can be made without departing from the gist of the present invention.

[0134] For example, regarding the alignment system, an example provided at a position away from the projection optical system 7B in the X direction, that is, the off-axis alignment where the position of the optical axis of the projection optical system 7B and the axis of alignment is shifted, has been described. However, it is not limited to this. An on-axis alignment where the optical axis of the projection optical system 7B and the alignment axis overlap, or an alignment of the TTL (Through the lens) configuration measured through the projection optical system 7B may be provided together.

[0135] Also, for example, the spatial light modulator 75 includes a liquid crystal element, a digital micromirror device (digital micro mirror device, DMD), a magneto-optic spatial light modulator (Magneto Optic Spatial Light Modulator, MOSLM), etc. The spatial light modulator 75 may be a reflection type that reflects the illumination light from the illumination optical system 7A, a transmission type that transmits the illumination light, or a diffraction type that diffracts the illumination light. The spatial light modulator 75 can modulate the illumination light spatially and temporally.

[0136] Also, for example, in the above embodiment, the method is such that the first exposure is performed by the exposure apparatus 8 and the second exposure is performed by the exposure apparatus 1, but it is not limited to this. For example, a method may be used where the first exposure and the second exposure are performed by the exposure apparatus 8, and the third exposure is performed by a maskless exposure machine (exposure apparatus 1). Furthermore, as in the first embodiment, the first exposure is not limited to being the exposure by the exposure apparatus 8. The first exposure may be by the exposure apparatus 1. Also, as described above, the first exposure may be performed by the maskless exposure apparatus 1, and the second exposure may be performed by the exposure apparatus 8.

[0137] 〔Modification Example 1〕 FIG. 14 is a front view showing an example of an exposure apparatus 8 that performs exposure using the mask according to Modification 1. As shown in FIG. 14, the exposure apparatus 8 may be a mirror projection type scanning exposure apparatus having an arc-shaped projection region SF extending in the Y direction. In that case, the substrate 10 is moved so that the left half portion of the exposure region R1 on the substrate 10 is scanned and exposed in the projection region SF along the scanning locus SL1. Thereafter, the substrate 10 is stepwise moved in the Y direction, and then the substrate 10 is moved again so that the right half portion of the exposure region R1 is scanned and exposed in the projection region SF along the scanning locus SL2.

[0138] Also in this configuration, a joint portion 85C may be formed in the central portion of the exposure region 8. Therefore, at the end portion of the arc-shaped projection region SF that overlaps with the joint portion 85C, the illuminance distribution in the Y direction of the illumination light on the mask is set to smoothly incline. Even when such an exposure apparatus 8 is used, there is a possibility that exposure unevenness (such as joint error) may occur. Therefore, by combining with the maskless exposure apparatus 1 as shown in FIG. 1 having a plurality of projection regions that are sufficiently smaller than the width of the projection region SF in the Y direction, and performing overlay exposure between different layers, a display panel or the like can be manufactured with good yield.

[0139] 〔Modification 2〕 FIG. 15 is an explanatory diagram showing the positional relationship of alignment marks in an exposure apparatus 8 that performs exposure using the mask according to Modification 2. As also described in FIG. 12, the exposure apparatus 8 is provided with a plurality of alignment systems. For example, as shown in FIG. 15, a plurality of alignment systems AL1, AL2,... AL5 are arranged in the Y direction orthogonal to the scanning movement direction (X direction) of the substrate 10. Further, a rectangular exposure region R1 such as a display is arranged on the substrate 10, and a plurality of alignment marks M1, M2,... M8 are arranged around it. For example, eight marks M1 to M8 are arranged at predetermined intervals in the Y direction near the +X direction end portion and the -X direction end portion of the exposure region R1, respectively.

[0140] Of the eight marks arranged on each of the +X side and the -X side of the exposure area R1, the marks M2, M3, ··· M7 are each arranged within the joint portion 85C set by the exposure apparatus 8 shown in FIG. 7. Therefore, when the exposure area R1 (underlying pattern) and the marks M1 to M8 are already formed on the substrate 10 and overlay exposure is performed on the exposure area R1 with the exposure apparatus 8, the substrate 10 is moved in the XY directions by the stage 80 shown in FIG. 7 in advance, and the positions of the plurality of marks M1 to M8 are measured by the plurality of alignment systems AL1, AL2, ··· AL5, and alignment is performed.

[0141] Assuming that the exposure area R1 and the plurality of marks M1 to M8 as shown in FIG. 15 are simultaneously exposed on the substrate 10 by the exposure apparatus 8 in FIG. 7, the relative positional relationships of the marks M1 to M8 on the substrate 10 include positional deviation errors due to splicing errors (ΔXd, ΔYd in FIG. 10). Therefore, when performing overlay exposure on the substrate 10 with marks M1 to M8 as shown in FIG. 15 using the maskless exposure apparatus 1 in FIGS. 1 to 6, the degree of the splicing error can be measured by detecting the positional relationships of the marks M1 to M8 by the second alignment measurement system 5B shown in FIG. 2 of the maskless exposure apparatus 1.

[0142] Also, marks M2', M3', ··· M7' may be formed at the same Y-direction positions as each of the marks M2 to M7 provided at the position of the joint portion 85C also within the exposure area R1. When there are marks M2' to M7' within the exposure area R1, using the second alignment measurement instrument 5B of the maskless exposure apparatus 1, for example, the positional deviation error of the pattern array, particularly the non-linear deformation error, within the block area Ab surrounded by the marks M2, M4, M2', M4' in FIG. 15 can also be measured in detail.

[0143] 〔Modification Example 3〕 In the exposure apparatus 8 that performs exposure using the mask of FIG. 7, a plurality of trapezoidal projection regions by the projection optical system 84 are joined together and exposed in the Y direction orthogonal to the scanning direction (X direction). However, it can also be used in such a way that stitching exposure is performed in the scanning direction. In that case, for example, after transferring the first mask pattern to the region up to about half in the X direction on the substrate 10 by the first scanning exposure, the second mask pattern is transferred to the remaining about half region by the second scanning exposure. At that time, the first mask pattern and the second mask pattern transferred onto the substrate 10 are joined together in the X direction.

[0144] Such a joining method is also called scan stitching exposure. Also in this case, since a stitching error occurs between the patterns joined in the X direction on the substrate 10, when performing overlay exposure by the maskless exposure apparatus 1 in the same manner as in the previous embodiments and modifications, it is possible to perform a fine correction with high precision of the positional deviation caused by the stitching error for the overlay.

[0145] Regarding the embodiments described above, the following additional remarks are further disclosed. [Supplementary Note 1] Exposing a first pattern onto a substrate through a first projection optical system; Exposing a second pattern onto the substrate on which the first pattern has been exposed (on the substrate on which a circuit pattern has been formed based on the first pattern) through a second projection optical system; including A device manufacturing method of making the size of the first projection region on the substrate by the first projection optical system different from the size of the second projection region on the substrate by the second projection optical system. [Supplementary Note 2] One of the first pattern and the second pattern is exposed by light through a mask; The other of the first pattern and the second pattern is exposed by light through a spatial light modulator. The device manufacturing method according to Supplementary Note 1. [Supplementary Note 3] Arranging the substrate and the mask in an optically conjugate relationship with each other through one of the first projection optical system and the second projection optical system; Disposing the substrate and the spatial light modulator in an optically conjugate relationship via the other of the first projection optical system and the second projection optical system; The device manufacturing method according to Addendum 2 including the above. [Addendum 4] Exposing a first pattern onto a substrate via a first projection optical system; Exposing a second pattern onto the substrate on which the first pattern has been exposed (the substrate on which a circuit pattern has been formed based on the first pattern) via a second projection optical system; including; One of the first pattern and the second pattern is exposed by light via a mask; The other of the first pattern and the second pattern is exposed by light via a spatial light modulator. A device manufacturing method.

Explanation of reference numerals

[0146] 1... Exposure apparatus, 5... Measurement system, 5A... First alignment measurement system, 5B... Second alignment measurement system, 6... Light source unit, 7... Exposure module, 7A... Illumination optical system, 7B... Projection optical system, 7C... Modulation unit, 8... Mask exposure apparatus, 9... Control system, 10... Substrate, 12... Alignment mark, 75... Spatial light modulator, 80... Substrate stage, 81... Light source unit, 82... Illumination optical system, 83... Mask stage, 84... Projection optical system, 85... First exposure pattern, 85A... First exposed portion, 85B... Second exposed portion, 85C... Joint portion, 90... Second exposure pattern, 100... Exposure width, 101... Exposure width, 102... Exposure width, 120... Alignment mark, P1... First interval, P2... Second interval, R1... Exposure region, R2... Exposure region, β... Projection magnification, θ... Angle

Claims

1. An exposure method using an exposure apparatus that exposes a second exposure pattern by overlapping it with a first exposure pattern while moving a substrate on which a first exposure pattern in which a part of a first exposed portion and a part of a second exposed portion are joined together is exposed in a scanning direction, wherein the second exposure pattern is divided and exposed by a plurality of exposure modules of the exposure apparatus, the plurality of exposure modules have a plurality of elements in a spatial light modulator and control the plurality of elements according to the second exposure pattern, illuminate the spatial light modulator, and project an image of the spatial light modulator controlled according to the second exposure pattern onto the substrate, and at least one of the plurality of exposure modules exposes a joint portion where a part of the first exposed portion and a part of the second exposed portion are joined together.

2. The exposure method according to claim 1, wherein an exposure width of the exposure module that exposes the joint portion is smaller than an exposure width of the joint portion.

3. The exposure method according to claim 2, wherein the exposure module that exposes the joint portion sets a size of the spatial light modulator and a projection magnification onto the substrate such that an exposure width is smaller than an exposure width of the joint portion.

4. The exposure method according to any one of claims 1 to 3, wherein the plurality of exposure modules are arranged in a second interval smaller than a first interval in which a plurality of the joint portions are formed on the first exposure pattern in a non-scanning direction orthogonal to the scanning direction.

5. Before exposing the substrate by the plurality of exposure modules, a position of the joint portion is measured, and an exposure position of the second exposure pattern by the plurality of exposure modules is controlled based on a measurement result of the position of the joint portion.

6. An exposure apparatus that exposes a second exposure pattern by overlapping it with a first exposure pattern while moving a substrate on which a first exposure pattern in which a part of a first exposed portion and a part of a second exposed portion are joined together is exposed in a scanning direction, comprising a plurality of exposure modules that divide and expose the second exposure pattern, wherein the plurality of exposure modules include a spatial light modulator having a plurality of elements and in which the plurality of elements are controlled according to the second exposure pattern, an illumination optical system that illuminates the spatial light modulator, and a projection optical system that projects an image of the spatial light modulator controlled according to the second exposure pattern onto the substrate. Before exposing the substrate with the plurality of exposure modules, a measurement system for measuring the position of the joint portion; A control unit that controls the exposure position of the second exposure pattern by the plurality of exposure modules based on the measurement result of the measurement system; An exposure apparatus, wherein at least one of the plurality of exposure modules exposes a joint portion where a part of the first exposure portion and a part of the second exposure portion are joined together.

7. The exposure apparatus according to claim 6, wherein an exposure width of the exposure module that exposes the joint portion is smaller than an exposure width of the joint portion.

8. The exposure apparatus according to claim 7, wherein the exposure module that exposes the joint portion sets the size of the spatial light modulator and the projection magnification of the projection optical system so that the exposure width becomes smaller than the exposure width of the joint portion.

9. The exposure apparatus according to claim 6, wherein the plurality of exposure modules are arranged in a plurality of numbers at a second interval smaller than a first interval in which a plurality of the joint portions are formed on the first exposure pattern in a non-scanning direction orthogonal to the scanning direction.

10. A data generation unit that generates control data for controlling the plurality of elements according to the second exposure pattern; The exposure apparatus according to claim 6, wherein the control unit controls at least one of the projection optical system, the spatial light modulator, and the data generation unit based on the measurement result of the measurement system, and controls the exposure position of the second exposure pattern by the plurality of exposure modules.

11. The exposure apparatus according to claim 10, wherein the control unit corrects the control data of the data generation unit based on the measurement result of the measurement system.

12. The exposure apparatus according to claim 10, wherein the control unit corrects at least one of a projection position, rotation, and projection magnification of the second exposure pattern by the projection optical system based on the measurement result of the measurement system.

13. The exposure apparatus according to claim 6, wherein the measurement system includes an alignment measurement system that measures alignment marks formed on the substrate together with the first exposure pattern.

14. An exposure apparatus that exposes the second exposure pattern over the first exposure pattern while moving the substrate on which the first exposure pattern has been exposed in the scanning direction, A plurality of exposure modules that divide and expose the second exposure pattern; A detection unit that detects a predetermined region in the first exposure pattern where the exposure state is different from the exposure states of other regions; An adjustment unit that adjusts the exposure module based on the detection result of the detection unit, The detection unit includes: A measurement system that measures the position of the predetermined region before the substrate is exposed by the plurality of exposure modules, A control unit that controls the exposure position of the second exposure pattern by the plurality of exposure modules based on the measurement result of the measurement system, The plurality of exposure modules include a spatial light modulator having a plurality of elements and the plurality of elements being controlled according to the second exposure pattern, an illumination optical system that illuminates the spatial light modulator, and a projection optical system that projects an image of the spatial light modulator controlled according to the second exposure pattern onto the substrate, At least one of the plurality of exposure modules adjusted by the adjustment unit exposes the predetermined region, and the exposure apparatus.

15. An exposure apparatus that exposes a first exposure pattern while moving a substrate in a scanning direction, An exposure module having a spatial light modulator having a plurality of elements and the plurality of elements being controlled according to the first exposure pattern, an illumination optical system that illuminates the spatial light modulator, and a projection optical system that projects an image of the spatial light modulator controlled according to the first exposure pattern onto the substrate, A receiving unit that receives information about another exposure apparatus that exposes a second exposure pattern over the first exposure pattern with respect to the substrate on which the first exposure pattern has been exposed, before the first exposure pattern is exposed on the substrate, An exposure apparatus including an adjustment unit that adjusts the exposure module based on the information received by the receiving unit.

16. The receiving unit receives the information about the position on the substrate where a part of the first exposure portion and a part of the second exposure portion are joined and exposed by the exposure apparatus, The adjustment unit adjusts the exposure module based on the information, and the exposure apparatus according to claim 15.

17. Exposing the substrate using the exposure apparatus according to any one of claims 6 to 16, And developing the exposed substrate, and a device manufacturing method including the steps.

18. Exposing a substrate for a flat panel display using the exposure apparatus according to any one of claims 6 to 16, And developing the exposed substrate, and a manufacturing method of a flat panel display including the steps.

19. A device manufacturing method for overlay exposure of patterns of different layers of an electronic device on a substrate, using a first exposure apparatus that projects and exposes a fixed pattern on a mask onto the substrate and a second exposure apparatus that projects and exposes a variable pattern by a spatial light modulator onto the substrate, wherein: When the size of a first projection area of the first exposure apparatus is smaller than the size of the electronic device to be formed on the substrate, a first step of forming a first layer of the electronic device by splicing and exposing a projection image of the fixed pattern that appears in the first projection area due to movement of the substrate; The second exposure apparatus includes a plurality of exposure modules that project the variable pattern within a second projection area smaller than the size of the first projection area, and a second step of forming a second layer of the electronic device by splicing and exposing projection images of the variable pattern projected onto the substrate from each of the plurality of exposure modules; When the second step is performed after the first step, in the second step, the position of the projection image of the variable pattern from each of the plurality of exposure modules is corrected based on the splicing error generated in the first step; When the first step is performed after the second step, in the second step, a device manufacturing method for correcting the position of the projection image of the variable pattern from each of the plurality of exposure modules based on a predicted splicing error that may occur in the first step.

Images