Member with Heat Spreader Structure and Method for Manufacturing the Same

Abstract

To provide a more efficient heat dissipation structure and a manufacturing method of the heat dissipation structure which can be easily formed without applying damage to an integrated circuit.SOLUTION: A member 34 with a heat spreader structure comprises a substrate member 31, on which an integrated circuit part 10 is formed, and a heat spreader structure part 9 which is formed on the integrated circuit part 10. The integrated circuit part 10 is formed in a recessed-and-projected shape, and the heat spreader structure part 9 is configured by forming a projected-and-recessed shape, which is fitted to the recessed-and-projected shape of the integrated circuit part 10, in a diamond layer 6 or forming a projected-and-recessed shape, which is fitted to the recessed-and-projected shape of the integrated circuit part 10, in a silicon substrate 8 where the diamond layer 6 is formed. The projected-and-recessed shape of the heat spreader structure part 9 is fitted to the recessed-and-projected shape of the integrated circuit part 10, and the heat spreader structure part 9 is bonded to the substrate member 31.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a member with a heat spreader structure and a method for manufacturing the same. It relates to a semiconductor substrate and a semiconductor device, and particularly provides a more efficient structure and means when using diamond having a high thermal conductivity as a heat dissipation material for semiconductor elements with increasing performance.

Background Art

[0002] Entering the full-fledged IoT era, the capacity (processing capacity, data storage capacity) of data centers has been continuously expanding through the active use of the cloud, and the performance has also been continuously improving. Along with the improvement in performance, the problem of heat generation from elements is considered to have become more important than ever. As actually shown in Non-Patent Document 1, the power consumption of one element is about 600 W, and the accompanying heat control has become important.

[0003] In Non-Patent Document 1, it is connected to an integrated heat spreader through a thermal interface material on a Compute Tile and an HBM (High Band pass Memory).

[0004] On the other hand, with the advent of 5G, solid-state power amplifiers, which are easy to miniaturize and lightweight as high-frequency amplifiers for mobile communication base stations and satellite communication systems, have been widely used. Also in these cases, similar to the above, the temperature inside the element rises due to self-heating generated during the amplification operation, and the element characteristics and reliability deteriorate, which has become a problem.

[0005] As a specific solution, generally, a metal with high thermal conductivity such as copper is connected to an element (heating element) (heat spreader), fins are made on this metal, and air cooling or cooling with a coolant (such as water cooling) is performed to control the temperature rise. From Non-Patent Document 2, focusing on the thermal conductivity (unit: W / mK), copper has a thermal conductivity of 386 - 402, while diamond has a high thermal conductivity of 1000 - 2000, indicating that diamond is very effective as an element heat sink.

[0006] Actually, focusing on this high thermal conductivity, the use of diamond as a heat dissipation material for semiconductor elements has been proposed. Patent Document 1 discloses a method of attaching diamond or a diamond-containing material with high thermal conductivity to the back surface of a semiconductor element. In addition, Patent Document 2 discloses a method of growing diamond or attaching diamond in an integrated circuit package in which semiconductor elements are integrated. Furthermore, Patent Document 3 discloses a method of controlling the isotopes of carbon that make up diamond to improve the thermal conductivity by focusing on the diamond thermal conduction mechanism itself.

[0007] As described above, heat dissipation (heat spreader) using diamond has attracted much attention because of its high thermal conductivity. Although there are methods to increase the thermal conductivity of diamond to the limit as in Patent Document 3, a practical problem is how to bring diamond into contact with a semiconductor element.

[0008] Patent Document 2 discloses growing diamond on an integrated circuit or attaching a substrate on which diamond has been grown on another substrate. However, for diamond growth, regardless of single crystal or polycrystal, a temperature of 800°C or higher and plasma are required, and growing it on a semiconductor integrated circuit is considered to have many restrictions due to element protection problems.

[0009] Based on FIG. 6, the heat spreader formed on an integrated circuit using diamond will be described. FIG. 6 is an explanatory diagram of a structure including a general heat sink. As shown in FIG. 6, a structure 134 including a general heat sink has a core 103 such as a CPU, Cache an intermediate material (dummy silicon) 102 is interposed on an integrated circuit support substrate 105 such as a laminate or a PCB forming / HBM104-1 and 104-2, and a heat spreader (heat sink) metal 101 is formed. Thus, current integrated circuits mainly have a structure in which a core such as a CPU and Cache a memory such as HBM are stacked on silicon or other substrates. Therefore, due to the different heights of the elements (CPU or memory, etc.), there is a difference in height when integrated. Generally, as shown in FIG. 6, in order to eliminate this step, after laminating dummy silicon or other materials, a metal such as Cu is bonded as a heat spreader, or diamond as in Patent Document 2 is bonded.

Prior Art Documents

Patent Documents

[0010]

Patent Document 1

Patent Document 2

Patent Document 3

Non-Patent Documents

[0011]

Non-Patent Document 1

Non-Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0012] In high-performance CPUs / GPUs / NPUs used in data centers and the like that are becoming more highly integrated with advanced performance and functionality, measures against heat dissipation are extremely important to prevent malfunction and reliability degradation of elements.

[0013] An object of the present invention is to provide a more efficient heat dissipation structure and a method for manufacturing a heat dissipation structure that can be easily formed without damaging the integrated circuit. The present invention has been made to solve the above problems, and when using diamond having a high thermal conductivity as a heat dissipation material for semiconductor elements with increasing performance, it provides a more efficient structure and means.

Means for Solving the Problems

[0014] The present invention has been made to achieve the above object, and is a member with a heat spreader structure having a substrate member on which an integrated circuit portion is formed and a heat spreader structure portion formed on the integrated circuit portion, wherein the integrated circuit portion forms an uneven shape, and the heat spreader structure portion is a diamond layer having an uneven shape fitted to the uneven shape of the integrated circuit portion, or a silicon substrate on which a diamond layer is formed, and the silicon substrate has an uneven shape fitted to the uneven shape of the integrated circuit portion, and the uneven shape of the heat spreader structure portion is fitted to the uneven shape of the integrated circuit portion, and the heat spreader structure portion is bonded to the substrate member. A member with a heat spreader structure is provided.

[0015] According to such a member with a heat spreader structure, an element with higher heat dissipation efficiency can be manufactured. Specifically, when laminating diamond for heat dissipation (heat spreader) on an integrated circuit, a shape adapted to the unevenness of the integrated circuit is prepared in advance on a separate substrate and laminated, and then bonded. By using diamond, it is possible to expect an improvement in heat dissipation characteristics by utilizing the high thermal conductivity of diamond. Further, diamond grown on a silicon substrate is used, and after removing or partially removing the silicon substrate, they are bonded together. By using such an easily processable silicon substrate as a material, it becomes possible to maintain heat dissipation characteristics even if there are irregularities in the integrated circuit.

[0016] At this time, the heat spreader structure portion is a wafer, the substrate member is a wafer having the integrated circuit portion, and the wafers are bonded together. The member with a heat spreader structure described above can be formed.

[0017] In the case of wafer-to-wafer bonding, by processing silicon (thickness and XY-direction shape) in advance according to the integrated circuit fabricated on the silicon substrate, bonding can be performed efficiently, and a high heat dissipation structure can be easily formed.

[0018] At this time, the heat spreader structure portion is a chip, the substrate member is a wafer having the integrated circuit portion, and the chip and the wafer are bonded together. The member with a heat spreader structure described above can be formed.

[0019] Regarding the method of arranging (diamond chips) by cutting out a silicon substrate on which diamond has grown to the size of an integrated circuit as chip-to-wafer, small pieces of this diamond chip are prepared in advance, attached to the concave portion of the integrated circuit, and then a silicon substrate on which diamond has grown is attached so as to cover the entire integrated circuit, and finally the silicon is removed. By this manufacturing method, a high heat dissipation structure can be easily formed without damaging the integrated circuit.

[0020] At this time, the heat spreader structure portion is a chip, the substrate member is a chip, and the chip-to-chip bonded members can be the heat spreader structure-attached member described above.

[0021] Regarding the chip-to-chip method of cutting a silicon substrate on which diamond has grown into the size of an integrated circuit (diamond chips) and arranging them, a shape adapted to the integrated circuit is prepared on the diamond chips by a method such as photolithography and pasted, and then to this a silicon substrate on which diamond has grown is pasted so as to cover the entire integrated circuit, and finally silicon is removed. By this manufacturing method, a high heat dissipation structure can be easily formed without damaging the integrated circuit.

[0022] At this time, the diamond layer is a CVD diamond layer, and the heat spreader structure-attached member described above can be used.

[0023] By using diamond grown by CVD method on a silicon substrate, a high heat dissipation structure can be easily formed.

[0024] The present invention has been made to achieve the above object, and is a method for manufacturing a member with a heat spreader structure, the method including: a step of preparing a substrate member on which an integrated circuit portion is formed and which has an uneven shape; a step of preparing a silicon substrate on which a diamond layer is formed; a step of forming an uneven shape that fits into the uneven shape of the integrated circuit portion on the diamond layer, or forming an uneven shape that fits into the uneven shape of the integrated circuit portion on the silicon substrate; a step of fitting the uneven shape of the diamond layer into the uneven shape of the integrated circuit portion, bonding them, and then removing the silicon substrate on the surface to form a heat spreader structure portion composed only of the diamond layer on the substrate member, or a step of fitting the uneven shape of the silicon substrate into the uneven shape of the integrated circuit portion, bonding them, and forming a heat spreader structure portion composed of the diamond layer and the silicon substrate. A method for manufacturing a member with a heat spreader structure is provided, characterized by including the above steps.

[0025] Prepare a hetero-substrate with diamond grown on a silicon substrate as this heat spreader, and form an uneven shape that fits into the uneven shape of the integrated circuit portion on the diamond layer of this substrate, or thin the silicon portion in advance and then process the silicon portion according to the shape of the integrated circuit.

[0026] By adjusting the thickness when thinning the silicon portion according to the unevenness of the integrated circuit, the heat spreader can be in close contact with each element of the integrated circuit, making it possible to effectively conduct heat.

[0027] In addition, for the above silicon processing, general photolithography technology and subsequent etching technology can be used as they are. Also, for handling the thinned wafer, there are several methods such as attaching a dummy substrate to the diamond side in advance and leaving only the outer peripheral portion of the silicon thick. There is no limitation to the method here.

[0028] In this way, by pre-processing the silicon, it becomes possible to make the silicon layer between the diamond and the integrated circuit as thin as possible, and an efficient heat spreader can be formed.

[0029] By this manufacturing method, a high heat dissipation structure can be easily formed without damaging the integrated circuit.

[0030] At this time, in the uneven shape forming step, it is preferable to remove at least a part of the silicon substrate according to the uneven shape of the integrated circuit portion to form an uneven shape.

[0031] By this manufacturing method, a high heat dissipation structure can be easily formed without damaging the integrated circuit.

[0032] At this time, further, a step of cutting out the silicon substrate on which the diamond layer is formed into small pieces to form diamond chips is included, and in the step of forming the heat spreader structure portion, the diamond chips are arranged so that the uneven shape of the diamond layer or the silicon substrate fits the uneven shape of the integrated circuit portion, and the heat spreader structure portion is bonded to the substrate member. The manufacturing method of the member with the heat spreader structure described above can be adopted.

[0033] By this manufacturing method, a high heat dissipation structure can be easily formed without damaging the integrated circuit.

[0034] At this time, further, after the step of forming the heat spreader structure portion, a step of attaching a silicon substrate on which another diamond layer is grown so as to cover all the diamond chips arranged on the substrate member with the silicon substrate on the front side, and a step of removing the silicon substrate can be included.

[0035] By this manufacturing method, a high heat dissipation structure can be easily formed without damaging the integrated circuit.

[0036] At this time, further, a step of cutting out the silicon substrate on which the diamond layer is formed into small pieces to form diamond chips, and a step of cutting out the substrate member on which the integrated circuit portion is formed into small pieces to form chips with integrated circuits are included. In the step of forming the heat spreader structure portion, after arranging the chips with integrated circuits, the diamond chips are bonded so that the concavo-convex shape is fitted to the concavo-convex shape of the integrated circuit portion, and the heat spreader structure portion can be formed on the substrate member.

[0037] By this manufacturing method, a high heat dissipation structure can be easily formed without damaging the integrated circuit.

[0038] At this time, further, after the step of forming the heat spreader structure portion, a step of bonding a silicon substrate on which another diamond layer is grown so as to cover all the diamond chips arranged on the substrate member with the silicon substrate on the front side, and a step of removing the silicon substrate are included, and the manufacturing method of the member with a heat spreader structure described above can be adopted.

[0039] By this manufacturing method, a high heat dissipation structure can be easily formed without damaging the integrated circuit.

Effect of the Invention

[0040] As described above, in the case of the member with a heat spreader structure of the present invention, by using diamond, it is possible to improve the heat dissipation characteristics by utilizing the high thermal conductivity of diamond.

[0041] Also, in the case of the manufacturing method of the member with a heat spreader structure, a diamond layer can be formed without damaging the integrated circuit, and a high heat dissipation structure can be easily formed. In addition, the diamond material grown on the silicon substrate can be utilized, and it becomes possible to use a large-diameter substrate.

Brief Description of the Drawings

[0042]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Embodiments for Carrying Out the Invention

[0043] Hereinafter, embodiments of the present invention will be described, but the present invention is not limited thereto.

[0044] As described above, there has been a demand for the development of an integrated circuit having high thermal conductivity and a simple manufacturing method thereof without causing damage.

[0045] Therefore, as a result of repeated studies on the above problems, the inventors have found that an integrated circuit having high thermal conductivity and a simple manufacturing method thereof without causing damage can be achieved by using diamond grown on a silicon substrate for the heat spreader structure of the integrated circuit and its manufacturing method, and have completed the present invention.

[0046] (First Embodiment) Hereinafter, a member with a heat spreader structure according to the first embodiment of the present invention will be described with reference to FIG. 1.

[0047] (Member with Heat Spreader Structure) FIG. 1 shows an explanatory diagram of a member with a heat spreader structure of the present invention. As shown in FIG. 1, the member 34 with a heat spreader structure of the present invention has a substrate member 31 on which an integrated circuit portion 10 is formed, and a heat spreader structure portion 9 formed on the integrated circuit portion 10.

[0048] (Substrate member) The substrate member 31 is composed of a substrate 5 and an integrated circuit portion 10 formed on the substrate 5. The substrate 5 is an integrated circuit support substrate such as a silicon substrate, a laminate, or a PCB. For example, the substrate member 31 is composed of a 300 mmφ silicon substrate and an integrated circuit such as a CPU fabricated on the silicon substrate.

[0049] (Integrated circuit portion) The integrated circuit portion 10 includes a core 3 such as a CPU, and Cache / HBM4-1 and 4-2. Cache / HBM4-2 is Cache formed by being laminated on / HBM4-1 and has a structure protruding with respect to only the portion of the core 3. Thus, the integrated circuit portion 10 forms an uneven shape.

[0050] (Heat spreader structure portion) The heat spreader structure portion 9 is a silicon substrate 8 on which a diamond layer 6 is formed, and the silicon substrate 8 has a concavo-convex shape formed to fit the concavo-convex shape of the integrated circuit portion 10. As can be seen from FIG. 1, through holes are formed in the silicon substrate 8, and the diamond layer 6 Cache is in contact with / HBM4-2. That is, the silicon substrate 8 is processed like a watermark engraving.

[0051] The member 34 with a heat spreader structure fits the concavo-convex shape of the heat spreader structure portion 9 to the concavo-convex shape of the integrated circuit portion 10, so that the heat spreader structure portion 9 is bonded to the substrate member 31 and attached thereto.

[0052] (Diamond layer) Although various synthesis methods are known for the diamond layer 6, in the case of semiconductor substrate applications, there are CVD (Chemical Vapor Deposition) methods such as microwave plasma and hot filament. Among these, the hot filament method, which can be applied to large-diameter substrates, can be said to be preferable.

[0053] The hot filament method is a method of growing diamond by decomposing and activating gas by applying an electric current to a tungsten or titanium filament installed on a substrate in a state where a substrate is placed in a reaction vessel under reduced pressure and methane and hydrogen are introduced as gases to heat it to a high temperature.

[0054] (Method for manufacturing a member with a heat spreader structure) Next, a method for manufacturing a member with a heat spreader structure according to the first embodiment of the present invention will be described with reference to FIG. 2. FIG. 2 shows an explanatory diagram of the method for manufacturing a member with a heat spreader structure of the present invention. As shown in FIG. 2, the method for manufacturing a member with a heat spreader structure of the present invention includes a substrate member preparation step, a diamond layer formation silicon substrate preparation step, a concavo-convex shape formation step, and a heat spreader structure portion formation step.

[0055] (Substrate member preparation step) This is a step of preparing a substrate member 31 on which an integrated circuit portion 10 is formed and which has a concavo-convex shape. For example, it can be prepared by forming an integrated circuit on a silicon substrate using a conventional method such as photolithography.

[0056] (Diamond layer formation silicon substrate preparation step) This is a step of preparing a silicon substrate 7 on which a diamond layer 6 is formed. Prepare a diamond hetero-substrate grown by CVD on a silicon substrate. The silicon substrate 7 on which the diamond layer 6 is formed is the diamond layer formation silicon substrate 32.

[0057] (Convex and concave shape forming process) This is a process of forming a convex and concave shape on the silicon substrate 7 that fits the convex and concave shape of the integrated circuit portion 10. The silicon substrate 7 is processed into a processed silicon substrate 8. For example, in the convex and concave shape forming process, at least a part of the silicon substrate 7 is removed according to the convex and concave shape of the integrated circuit portion 10 to form a convex and concave shape. First, the silicon substrate 7 is thinned (determined based on the step of the integrated circuit), and silicon is removed by photolithography according to the shape of the integrated circuit. The diamond layer 6 is formed, and the processed silicon substrate 8 is used as the convex and concave shape forming substrate 33.

[0058] (Heat spreader structure forming process) This is a process of fitting the convex and concave shape of the silicon substrate 8 to the convex and concave shape of the integrated circuit portion 10, bonding them together, and forming a heat spreader structure portion 9 composed of the diamond layer 6 and the silicon substrate 8 on the substrate member 31. At this time, for example, the surface of the silicon substrate 8 may be activated by plasma, or bonding may be performed using an adhesive or the like.

[0059] Figure 3 is an explanatory diagram of a method for manufacturing a member with a heat spreader structure according to the present invention by and is a diagram showing wafer-to-wafer bonding. As shown in Figure 3, the heat spreader structure portion 9 is a wafer, the substrate member 31 is a wafer having an integrated circuit portion, and the wafers are bonded together.

[0060] (Second embodiment) Hereinafter, a member with a heat spreader structure according to the second embodiment of the present invention will be described. The member with a heat spreader structure according to the second embodiment of the present invention has the same configuration as the first embodiment, except that the heat spreader structure portion 9 has a convex and concave shape formed on the diamond layer 6 that fits the convex and concave shape of the integrated circuit portion 10. Further, in the method for manufacturing a member with a heat spreader structure according to the second embodiment of the present invention, the uneven shape forming step is a step of forming an uneven shape on the diamond layer that fits into the uneven shape of the integrated circuit portion, and the step of forming the heat spreader structure portion is to fit the uneven shape of the diamond layer into the uneven shape of the integrated circuit portion, and after bonding, the silicon substrate on the surface is removed to form a heat spreader structure portion consisting only of the diamond layer on the substrate member. Otherwise, it has the same configuration as the first embodiment. Note that the removal of the silicon substrate can be performed by etching, grinding, or polishing.

[0061] (Third Embodiment) Hereinafter, a method for manufacturing a member with a heat spreader structure according to the third embodiment of the present invention will be described. FIG. 4 is an explanatory diagram of a method for manufacturing a member with a heat spreader structure according to the third embodiment of the present invention. by It is a diagram showing the bonding of chip-to-Wafer. As shown in FIG. 4, the heat spreader structure portion 9 is a chip, the substrate member 31 is a wafer having an integrated circuit portion, and the chip and the wafer are bonded together.

[0062] The method for manufacturing a member with a heat spreader structure according to the third embodiment of the present invention has the same configuration as the first embodiment except that it is a chip-to-Wafer bonding. The first embodiment was an example of wafer-to-wafer, but chip-to-wafer is also possible. Although the integrated circuit is in wafer form, for the diamond to be bonded to it, different from the first embodiment, a die (chip) is prepared in advance as a heat sink, and it is arranged and bonded on the integrated circuit (the bonding method may be surface activation of the diamond die or an adhesive). In this case as well, by thinning the silicon substrate on which diamond has been grown in advance, efficient heat dissipation becomes possible.

[0063] Also, in this case, it is possible to arbitrarily select whether to bond the diamond surface or the silicon surface to the integrated circuit.

[0064] The method for manufacturing a member with a heat spreader structure according to the third embodiment of the present invention further includes a step of cutting out the silicon substrate 8 on which the diamond layer 6 is formed into small pieces to form diamond chips 35. In the step of fitting the uneven shape of the diamond layer 6 or the silicon substrate 8 to the uneven shape of the integrated circuit portion 10 and bonding them to form the heat spreader structure portion 9 on the substrate member 31, the diamond chips 35 are arranged so that the uneven shape of the diamond layer 6 or the silicon substrate 8 is fitted to the uneven shape of the integrated circuit portion 10, and the heat spreader structure portion 9 is bonded to the substrate member 31. Thereby, a chip-to-Wafer bonded substrate 36 is produced.

[0065] Furthermore, after the step of fitting the uneven shape of the diamond layer 6 or the silicon substrate 8 to the uneven shape of the integrated circuit portion 10 and bonding them to form the heat spreader structure portion 9 on the substrate member 31, a step of attaching a silicon substrate on which another diamond layer has grown, with the silicon substrate on the front side, so as to cover all the diamond chips arranged on the substrate member, and a step of removing the silicon substrate are preferably included. In this way, furthermore, a large diamond substrate may be bonded on top to cover the whole.

[0066] (Fourth Embodiment) Hereinafter, the method for manufacturing a member with a heat spreader structure according to the fourth embodiment of the present invention will be described.

[0067] FIG. 5 is an explanatory diagram of the method for manufacturing a member with a heat spreader structure of the present invention by and is a diagram showing chip-to-chip bonding. As shown in FIG. 5, the heat spreader structure portion 9 is a chip, the substrate member 31 is a chip, and the chips are bonded together.

[0068] The manufacturing method of the member with a heat spreader structure according to the fourth embodiment of the present invention has the same configuration as the first embodiment, except that it is a chip-to-chip bonding. The first embodiment is an example of wafer-to-wafer, and the third embodiment is an example of chip-to-wafer, but chip-to-chip is also possible. Prepare dies (chips) in advance for integrated circuit chips and heat sinks, and arrange and bond the dies (chips) on the integrated circuit chips (the bonding method may be either surface activation of a diamond die or an adhesive). In this case as well, by thinning the silicon substrate on which diamond has been grown in advance, efficient heat dissipation becomes possible.

[0069] The manufacturing method of the member with a heat spreader structure according to the fourth embodiment of the present invention further includes a step of cutting out the silicon substrate 8 on which the diamond layer 6 is formed into small pieces to form diamond chips 35, and a step of cutting out the substrate member on which the integrated circuit portion is formed into small pieces to form chips 37 with integrated circuits. In the step of fitting the uneven shape of the diamond layer 6 or the silicon substrate 8 to the uneven shape of the integrated circuit portion and bonding them to form the heat spreader structure portion 9 on the substrate member, the diamond chips 35 are arranged so that the uneven shape of the diamond layer 6 or the silicon substrate 8 is fitted to the uneven shape of the integrated circuit portion, and the heat spreader structure portion 9 is bonded to the substrate member 31. Thereby, a chip-to-chip bonded substrate 38 is produced.

[0070] Furthermore, after the step of fitting the uneven shape of the diamond layer 6 or the silicon substrate 8 to the uneven shape of the integrated circuit portion 10 and bonding them to form the heat spreader structure portion 9 on the substrate member 31, it is preferable to have a step of attaching a silicon substrate on which another diamond layer has grown so as to cover all the diamond chips arranged on the substrate member with the silicon substrate on the front side, and a step of removing the silicon substrate.

Example

[0071] Hereinafter, the present invention will be specifically described with reference to examples, but this does not limit the present invention.

[0072] (Example 1) A diamond layer was formed on a 300 mmφ silicon substrate by the hot filament method. The diamond was in a microcrystalline state and had a thickness of 0.05 mm. Using such a silicon wafer, the silicon on the side opposite to the surface on which diamond was formed was thinned by grinding. At this time, the outer peripheral portion of the silicon was left with the original thickness so that photolithography was possible. Photolithography was performed to form a concavo-convex structure. It was bonded to a wafer on which an integrated circuit was fabricated to produce a heat spreader structure.

[0073] (Example 2) A diamond layer was formed on a 300 mmφ silicon substrate by the hot filament method. The diamond was in a microcrystalline state and had a thickness of 0.05 mm. Using such a silicon wafer, it was cut to an appropriate size, the silicon on the side opposite to the surface on which diamond was formed was thinned by grinding to form chips, photolithography was performed, and a concavo-convex structure was formed. It was bonded to a wafer on which an integrated circuit was fabricated to produce a heat spreader structure.

[0074] Through the performance evaluation test of the integrated circuit, it was found that even when a heat spreader structure was fabricated, there was no damage to the integrated circuit, and the heat spreader structure had high heat dissipation efficiency.

[0075] Note that the present invention is not limited to the above-described embodiments. The above-described embodiments are examples, and any structure that has substantially the same configuration as the technical idea described in the claims of the present invention and exhibits the same operational effects is included in the technical scope of the present invention.

Description of Symbols

[0076] 3…Core such as CPU, 4-1…Cash / HBM, 4-2…Cash / HBM, 5…Substrate, 6…Diamond layer, 7…Silicon substrate, 8…Processed silicon substrate, 9…Heat spreader structure part, 10…Integrated circuit part, 31…Substrate member, 32…Silicon substrate for diamond layer formation, 33…Substrate with uneven shape, 34…Member with heat spreader structure, 35…Diamond chip, 36…Chip-to-Wafer bonding substrate, 37…Chip with integrated circuit, 38…Chip-to-chip bonding substrate, 101…Heat spreader (heat sink) metal, 102…Intermediate material (dummy silicon), 103…Core such as CPU, 104-1…Cash / HBM, 104-2…Cash / HBM, 105…Integrated circuit support substrate such as laminate or PCB, 134…Structure including a general heat sink.

Claims

1. A member with a heat spreader structure, comprising a substrate member on which an integrated circuit portion is formed, and a heat spreader structure portion formed on the integrated circuit portion, wherein the integrated circuit portion forms an uneven shape, the heat spreader structure portion is a diamond layer with an uneven shape formed to fit the uneven shape of the integrated circuit portion, or a silicon substrate on which a diamond layer is formed and having an uneven shape formed to fit the uneven shape of the integrated circuit portion, the uneven shape of the heat spreader structure portion is fitted to the uneven shape of the integrated circuit portion, and the heat spreader structure portion is bonded to the substrate member, the heat spreader structure portion is a wafer, the substrate member is a wafer having the integrated circuit portion, and the wafers are bonded together, or the heat spreader structure portion is a chip, the substrate member is a wafer having the integrated circuit portion, and the chip and the wafer are bonded together, characterized in that it is a member with a heat spreader structure.

2. The member with a heat spreader structure according to claim 1, characterized in that the diamond layer is a CVD diamond layer.

3. A method for manufacturing a member with a heat spreader structure, comprising: preparing a substrate member on which an integrated circuit portion is formed and has an uneven shape; preparing a silicon substrate on which a diamond layer is formed; forming an uneven shape on the diamond layer to fit the uneven shape of the integrated circuit portion, or forming an uneven shape on the silicon substrate to fit the uneven shape of the integrated circuit portion; fitting the uneven shape of the diamond layer or the silicon substrate to the uneven shape of the integrated circuit portion, bonding them, and then removing the silicon substrate on the surface to form a heat spreader structure portion consisting only of the diamond layer on the substrate member, or fitting the uneven shape of the silicon substrate to the uneven shape of the integrated circuit portion, bonding them to form a heat spreader structure portion consisting of a diamond layer and a silicon substrate, characterized in that it is a method for manufacturing a member with a heat spreader structure.

4. The method for manufacturing a member with a heat spreader structure according to claim 3, wherein in the uneven shape forming step, at least a part of the silicon substrate is removed in accordance with the uneven shape of the integrated circuit portion to form an uneven shape.

5. Furthermore, it has a step of cutting out the silicon substrate on which the diamond layer is formed into small pieces to form diamond chips, In the step of forming the heat spreader structure portion, the diamond chips are arranged so that the uneven shape of the diamond layer or the silicon substrate fits the uneven shape of the integrated circuit portion, and the heat spreader structure portion is bonded to the substrate member. The method for manufacturing a member with a heat spreader structure according to claim 3 or 4, characterized in that.

6. Furthermore, after the step of forming the heat spreader structure portion, a step of attaching a silicon substrate on which another diamond layer has grown, with the silicon substrate on the front side, so as to cover all the diamond chips arranged on the substrate member, And a step of removing the silicon substrate. The method for manufacturing a member with a heat spreader structure according to claim 5.

7. Furthermore, a step of cutting out the silicon substrate on which the diamond layer is formed into small pieces to form diamond chips, It has a step of cutting out the substrate member on which the integrated circuit portion is formed into small pieces to form a chip with an integrated circuit, In the step of forming the heat spreader structure portion, after arranging the chips with integrated circuits, the diamond chips are bonded so that the uneven shape fits the uneven shape of the integrated circuit portion, and the heat spreader structure portion is formed on the substrate member. The method for manufacturing a member with a heat spreader structure according to claim 3 or 4, characterized in that.

8. Furthermore, after the step of forming the heat spreader structure portion, a step of attaching a silicon substrate on which another diamond layer has grown, with the silicon substrate on the front side, so as to cover all the diamond chips arranged on the substrate member, And a step of removing the silicon substrate. The method for manufacturing a member with a heat spreader structure according to claim 7.

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