Lead Frame, Semiconductor Device, and Method of Manufacturing Semiconductor Device

Abstract

The lead frame (100) includes an N lead (101) having an N electrode (1) at one of its both ends and connected to an outer frame (7) at both ends, and a P lead (102) provided side by side with a space from the N lead (101), having a P electrode (2) at one of its both ends and connected to the outer frame (7) at both ends. Further, the lead frame (100) includes an AC lead (103) provided side by side with a space between the N lead (101) and the P lead (102), having a base end connected to the outer frame (7) and a tip end being a free end, and an insulating support member (8) that connects the AC lead (103) and the N lead (101) and supports the AC lead (103). And at least one of the N electrode (1) and the P electrode (2) is provided on the side opposite to the side where the AC electrode (3) is disposed.

Description

Technical Field

[0001] The present disclosure relates to a lead frame, a semiconductor device, and a method for manufacturing a semiconductor device.

Background Art

[0002] Conventional lead frames suppress the sagging of leads by providing suspension leads at portions of the leads opposite to the electrodes connected to the outer frame and connecting them to the outer frame (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in the case of a lead frame encapsulated with resin, it is necessary to provide an insulation distance between adjacent suspension leads and electrodes for the electrodes and suspension leads that are not encapsulated with resin and are exposed to the outside. For example, when three leads are arranged side by side and a suspension lead is provided for the central lead sandwiched between the two leads, it is necessary to provide an insulation distance between this suspension lead and at least one of the electrodes of the two leads, resulting in an increase in the size of the encapsulated resin body. Here, a structure in which no suspension lead is provided for the central lead in order not to increase the size of the encapsulated resin body can be considered, but in this case, there is a problem that the central lead sags.

[0005] The present disclosure has been made to solve the above problems, and provides a lead frame, a semiconductor device, and a method for manufacturing a semiconductor device that can suppress the sagging of a central lead without providing a suspension lead for the central lead sandwiched between two leads.

Means for Solving the Problems

[0006] The lead frame according to the present disclosure includes a first double-end support lead having both ends connected to an outer frame and having a first electrode at one of the both ends, a second double-end support lead provided side by side with a space from the first double-end support lead, having both ends connected to the outer frame and having a second electrode at one of the both ends, and a single-end support lead provided side by side with a space between the first double-end support lead and the second double-end support lead, having a third electrode with a base end connected to the outer frame and a tip end being a free end. The lead frame further includes an insulating support member that connects the single-end support lead and the first double-end support lead and supports the single-end support lead, and at least one of the first electrode and the second electrode is provided on a side opposite to the side where the third electrode is disposed.

[0007] The semiconductor device according to the present disclosure includes a lead frame with semiconductor elements mounted in a row on one side, a sealing resin body formed inside the outer periphery of the lead frame, a heat dissipation insulating sheet attached to a surface opposite to the surface on which the semiconductor elements are mounted, and a cooler attached to the lead frame via the heat dissipation insulating sheet. The lead frame includes a first double-end support lead having both ends extending outside the sealing resin body and having a first electrode at one of the both ends, a second double-end support lead provided side by side with a space from the first double-end support lead, having both ends extending outside the sealing resin body and having a second electrode at one of the both ends, and a single-end support lead provided side by side with a space between the first double-end support lead and the second double-end support lead, having a third electrode with a base end extending outside the sealing resin body and a tip end provided inside the sealing resin body. The lead frame further includes an insulating support member that connects the single-end support lead and the first double-end support lead and supports the single-end support lead, and at least one of the first electrode and the second electrode is provided on a side opposite to the side where the third electrode is disposed.

[0008] The method for manufacturing a semiconductor device according to the present disclosure mounts semiconductor elements in a row on one side of a lead frame and attaches an insulating support member, and on the opposite side of the surface of the lead frame on which the semiconductor elements are mounted, in the order of a heat dissipation insulating sheet and a cooler, a sealing resin body that seals the lead frame, the heat dissipation insulating sheet, and the cooler is formed by transfer molding.

Effect of the Invention

[0009] According to the present disclosure, it is possible to obtain a lead frame, a semiconductor device, and a method for manufacturing a semiconductor device that can suppress the sagging of the leads while preventing an increase in the size of the sealing resin body without providing hanging leads on the leads sandwiched between two leads.

Brief Description of the Drawings

[0010]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Best Mode for Carrying Out the Invention

[0011] Embodiment 1. The semiconductor device 500 in Embodiment 1 is a transfer molded semiconductor device mounted on an inverter and having a lead frame 100 on which a semiconductor element 11 is mounted. Based on FIGS. 1 to 5, the lead frame 100, the semiconductor device 500, and the manufacturing method of the semiconductor device 500 will be described. In FIGS. 1 to 5, for the sake of convenience, the illustration of the signal terminals is omitted.

[0012] Hereinafter, for the sake of easy explanation, the description will be made with appropriate reference to the X-Y-Z axes shown in the drawings. ***Description of Lead Frame 100*** First, the configuration of the lead frame 100 in Embodiment 1 will be described. FIG. 1 is a top view of the lead frame (after mounting the semiconductor element and installing the bonding wire) before the tie bar cut in Embodiment 1. The X-Y-Z axes are illustrated such that the direction from left to right on the paper surface corresponds to the +X direction, the direction from bottom to top on the paper surface corresponds to the +Y direction, and the direction from the back to the front on the paper surface corresponds to the +Z direction.

[0013] In FIG. 1, the lead frame 100 includes a rectangular ring-shaped outer frame 7 formed so as to surround the outer periphery, an N (negative) lead 101, a P (positive) lead 102 provided side by side with a space from the N lead 101, and an AC (output) lead 103 provided side by side with a space between the N lead 101 and the P lead 102.

[0014] Both ends of the N lead 101 are connected to the outer frame 7, and it has an N (negative) electrode 1 at one end. Also, both ends of the P lead 102 are connected to the outer frame 7, and it has a P (positive) electrode 2 at one end. Further, the other end (base end) of the AC lead 103 is connected to the outer frame 7, and it has an AC (output) electrode 3 at the other end. Note that one end (tip end) of the AC lead 103 is a free end.

[0015] On the upper surfaces (+Z - direction sides) of the P - lead 102 and the AC - lead 103, the semiconductor element 11 is mounted. Also, between the N - lead 101 and the AC - lead 103, an insulating support member 8 that connects the N - lead 101 and the AC - lead 103 and supports the AC - lead 103 is provided.

[0016] The N - lead 101 is connected to the outer frame 7 on the - X direction side via the N - electrode 1, and the P - lead 102 is connected to the outer frame 7 on the - X direction side and on the - Y direction side of the N - lead 101 via the P - electrode 2. Then, the AC - lead 103 is connected to the outer frame 7 on the +X direction side, which is the opposite side of the N - electrode 1 and the P - electrode 2, via the AC - electrode 3.

[0017] The lead frame 100 is formed of copper. Note that the material of the lead frame 100 is preferably formed of copper or an alloy mainly composed of copper, but any material with conductivity and heat conductivity may be used.

[0018] The outer frame 7 is formed in a rectangular ring shape, and inside the outer frame 7, the N - lead 101, the AC - lead 103, and the P - lead 102 are arranged in this order from the +Y direction side, with intervals between them. Also, on the outer frame 7 on the +Y direction side, tie bars 12 arranged at intervals between the N - leads 101 are provided. Further, on the outer frame 7 on the - Y direction side, tie bars 13 arranged at intervals between the P - leads 102 are provided.

[0019] Both the tie bar 12 and the tie bar 13 have a rectangular parallelepiped shape extending in the X direction. Both ends of the tie bar 12 and the tie bar 13 are connected to the outer frame 7. Further, a suspension lead 4 extending in the +Y direction from the N - lead 101 is connected to the tie bar 12. Also, a suspension lead 5 extending in the - Y direction from the P - lead 102 is connected to the tie bar 13.

[0020] The N lead 101, P lead 102, and AC lead 103 all have a rectangular parallelepiped shape extending in the X direction. The N lead 101 and P lead 102 are arranged side by side with a gap therebetween, and the AC lead 103 is arranged with a gap between the N lead 101 and P lead 102. The N lead 101 has an N electrode 1 at the end on the -X direction side, the P lead 102 has a P electrode 2 at the end on the -X direction side, and the AC lead 103 has an AC electrode 3 at the end on the +X direction side.

[0021] The N lead 101 is an example of the first both-end supported lead. The end of the N lead 101 on the -X direction side is connected to the outer frame 7 via the N electrode 1, and the end on the +X direction side is connected to the tie bar 12 of the outer frame 7 via the suspension lead 4. Thus, since both ends of the N lead 101 are connected to the outer frame 7, it can be said that both ends are supported by the outer frame 7. Note that a plurality of signal terminals (not shown) extending from the outer periphery on the +Y direction side of the outer frame 7 toward the N lead 101 are installed in the gap between the N lead 101 and the tie bar 12 in the Y direction.

[0022] Also, the N lead 101, which is the first both-end supported lead, has a both-end supported lead side protruding portion 14 that branches in the -Y direction from the side facing the AC lead 103 and protrudes along one end (tip) of the AC lead 103.

[0023] The P lead 102 is an example of the second both-end supported lead. The end of the P lead 102 on the -X direction side is connected to the outer frame 7 via the P electrode 2, and the end on the +X direction side is connected to the tie bar 13 via the suspension lead 5. Thus, since both ends of the P lead 102 are connected to the outer frame 7, it can be said that both ends are supported by the outer frame 7. Note that a plurality of signal terminals (not shown) extending from the outer periphery on the -Y direction side of the outer frame 7 toward the P lead 102 are installed in the gap between the P lead 102 and the tie bar 13 in the Y direction. Also, semiconductor elements 11 are mounted in a row on the upper surface (+Z direction side surface) of the P lead 102.

[0024] The AC lead 103 is an example of a one-end supported lead. One end of the AC lead 103 in the +X direction is connected to the outer frame 7 via the AC electrode 3, while the end in the -X direction is not connected to the outer frame 7. Thus, it can be said that one end of the AC lead 103 in the X direction is supported by the outer frame 7. And it can be said that the end of the AC lead 103 in the -X direction is a free end. Also, semiconductor elements 11 are mounted in a row on the upper surface (+Z direction side) of the AC lead 103.

[0025] The suspension lead 4 extends in the +Y direction, which is a direction perpendicular to the longitudinal direction of the N lead 101, from near the tip of the end on the opposite side (+X direction side) of the N electrode 1 among both ends of the N lead 101. The suspension lead 4 is connected to the tie bar 12 of the outer frame 7. Since the N lead 101 is connected to the outer frame 7 via the suspension lead 4, it can also be said that the N lead 101 is suspended by the outer frame 7, and the suspension lead 4 plays a role of fixing the N lead 101 to the outer frame 7. Also, the suspension lead 5 extends in the -Y direction, which is a direction perpendicular to the longitudinal direction of the P lead 102, from near the tip of the end on the opposite side (+X direction side) of the P electrode 2 among both ends of the P lead 102. The suspension lead 5 is connected to the tie bar 13 of the outer frame 7. Since the P lead 102 is connected to the outer frame 7 via the suspension lead 5, it can also be said that the P lead 102 is suspended by the outer frame 7, and the suspension lead 5 plays a role of fixing the P lead 102 to the outer frame 7.

[0026] The semiconductor elements 11 are mounted in a row on the upper surfaces (+Z direction side) of the P lead 102 and the AC lead 103. The semiconductor elements 11 are, for example, power semiconductor elements such as IGBT (Insulated Gate Bipolar Transistor), MOSFET (Metal Oxide Semiconductor Field Effect Transistor), and diodes. Also, the power semiconductor element may be an RC-IGBT (Reverse-Conducting IGBT) in which an IGBT and a freewheeling diode are formed in one semiconductor substrate. Note that the semiconductor elements 11 are not limited to power semiconductor elements.

[0027] The semiconductor chip constituting the semiconductor element 11 is preferably formed of silicon (Si), but is not limited to silicon (Si). The semiconductor chip of the semiconductor element 11 is, for example, silicon carbide (SiC), a gallium nitride-based material (for example, gallium nitride (GaN)), or diamond. Note that the semiconductor chip constituting the semiconductor element 11 may be used alone or in combination with one of the materials of silicon carbide (SiC), a gallium nitride-based material (for example, gallium nitride (GaN)), and diamond.

[0028] The upper surface (+Z direction side surface) of the semiconductor element 11 installed on the upper surface of the P lead 102 (+Z direction side surface) and the upper surface of the AC lead 103 (+Z direction side surface) are electrically connected using a bonding wire 15. Also, the upper surface of the semiconductor element 11 installed on the upper surface of the AC lead 103 (+Z direction side surface) and the upper surface of the N lead 101 (+Z direction side surface) are similarly electrically connected using the bonding wire 15. Note that the material of the bonding wire 15 is preferably aluminum with high bonding reliability, but may also be copper, gold, or silver.

[0029] Note that, instead of the bonding wire 15, for example, a metal plate 16 made of metal may be installed. FIG. 2 is a top view of the lead frame before the tie bar cut in Embodiment 1 (after mounting the semiconductor element and installing the metal plate). In FIG. 2, in the lead frame 100, a metal plate 16 is used instead of the bonding wire 15. In the lead frame 100, the semiconductor element 11 is soldered to the upper surfaces (+Z direction side) of the P lead 102 and the AC lead 103, and at the same time, the metal plate 16 is also fixed to a predetermined position of the lead frame 100 by soldering.

[0030] The N electrode 1 is an example of the first electrode. The N electrode 1 is connected to the negative side of the bias power supply.

[0031] The P electrode 2 is an example of a second electrode. The P electrode 2 is connected to the positive side of the bias power supply.

[0032] The AC electrode 3 is an example of a third electrode. The AC electrode 3 serves to output an output signal from the inverter.

[0033] The insulating support member 8 has a rectangular parallelepiped shape. The insulating support member 8 is a ceramic chip component. The insulating support member 8 is formed of either aluminum nitride or silicon nitride, and has metal pieces at both ends. The metal pieces are electrodes formed of a metal such as nickel, for example. However, the insulating support member 8 is ultimately an insulating component made of ceramic and is not used in an electrical circuit for conduction. For example, it is used for heat dissipation purposes. The metal pieces are used to solder the insulating support member 8 to the lead frame 100.

[0034] The insulating support member 8 is aligned in the longitudinal direction in the X direction. One of the metal pieces at both ends of the insulating support member 8 is fixed by soldering to the upper surface (+Z direction side surface) of the both-end support lead protrusion 14 of the N lead 101, which is a first both-end support lead. The other of the metal pieces at both ends of the insulating support member 8 is fixed by soldering to the upper surface (+Z direction side surface) near the tip of the -X direction side end of the AC lead 103, which is a one-end support lead. As a result, the insulating support member 8 connects between the N lead 101 and the AC lead 103.

[0035] Note that the surface on which the insulating support member 8, which is a ceramic chip component, is installed is the same as the surface on which the semiconductor element 11 is mounted, that is, the upper surface (+Z direction side surface) of the lead frame 100. Therefore, in the process of manufacturing the semiconductor device 500, when the semiconductor element 11 is installed on the P lead 102 and the AC lead 103 by soldering, at the same time, the insulating support member 8 is installed by soldering to the upper surface (+Z direction side surface) of the both-end support lead protrusion 14 of the N lead 101 and the upper surface (+Z direction side surface) near the tip of the -X direction side end of the AC lead 103, which is a one-end support lead.

[0036] In Embodiment 1, the insulating support member 8 may be a resin piece made of epoxy resin. The insulating support member 8 made of an epoxy resin piece is adhered to the lead frame 100 via an epoxy-based adhesive or a silicone-based adhesive. The insulating support member 8 has its longitudinal direction aligned in the X direction. One of the both end portions in the X direction of the insulating support member 8 is adhered via an adhesive to the upper surface (+Z direction side surface) of the both end support lead side protrusion 14 of the N lead 101 which is the first both end support lead. Also, the other of the both end portions in the X direction of the insulating support member 8 is adhered via an adhesive to the upper surface (+Z direction side surface) near the tip of the -X direction side end portion of the AC lead 103 which is a one end support lead. As a result, the insulating support member 8 connects the N lead 101 and the AC lead 103.

[0037] Also, in Embodiment 1, the insulating support member 8 may be a resin piece made of silicone resin. The insulating support member 8 made of a silicone resin piece is adhered to the lead frame 100 via an epoxy-based adhesive or a silicone-based adhesive. The insulating support member 8 has its longitudinal direction aligned in the X direction. One of the both end portions in the X direction of the insulating support member 8 is adhered via an adhesive to the upper surface (+Z direction side surface) of the both end support lead side protrusion 14 of the N lead 101 which is the first both end support lead and the upper surface (+Z direction side surface) near the tip of the -X direction side end portion of the AC lead 103 which is a one end support lead. As a result, the insulating support member 8 connects the N lead 101 and the AC lead 103. Also, the resin piece made of silicone resin is formed of a low-elastic material, for example, rubber.

[0038] ***Explanation of the effects of the lead frame 100*** In Embodiment 1, the lead frame 100 has an N lead 101 with both ends connected to the outer frame 7 and having an N electrode 1 at one of the both ends, and a P lead 102 provided side by side with a space from the N lead 101, with both ends connected to the outer frame 7 and having a P electrode 2 at one of the both ends. Further, the lead frame 100 in Embodiment 1 has an AC lead 103 provided side by side with a space between the N lead 101 and the P lead 102, having a base end connected to the outer frame 7 and a tip end being a free end, and an insulating support member 8 that connects the AC lead 103 and the N lead 101 and supports the AC lead 103. And at least one of the N electrode 1 and the P electrode 2 is provided on the side opposite to the side where the AC electrode 3 is disposed.

[0039] With the lead frame 100 in Embodiment 1 having such a configuration, for the AC lead 103 provided between the N lead 101 and the P lead 102, for example, the tip end which is a free end is connected to the N lead 101 by the insulating support member 8, so that the tip end of the AC lead 103 is supported by the insulating support member 8. That is, it can be said that the tip end of the AC lead 103 is held at the installation height of the insulating support member 8. With such a configuration, the sag of the AC lead 103 can be suppressed without providing a suspension lead to the AC lead 103 sandwiched between the N lead 101 and the P lead 102. Also, by providing the insulating support member 8, the sag of the tip end of the AC lead 103 can be suppressed, so that there is no need to newly provide a suspension lead to the tip end of the AC lead 103. Therefore, since it is not necessary to secure the insulation distance between at least one of the N electrode 1 and the P electrode 2 provided on the side opposite to the side where the AC electrode 3 is disposed and the suspension lead, the size of the sealing resin body 6 that covers the inside of the outer periphery of the lead frame 100 can be made smaller than when a suspension lead is provided to the tip end of the AC lead 103. The sealing resin body 6 will be described later.

[0040] In addition, in the lead frame 100 of Embodiment 1, the P lead 102 and the AC lead 103 have the semiconductor elements 11 mounted in a row on one side, and the insulating support member 8 is provided on the same surface as the surface on which the semiconductor elements 11 are mounted. The insulating support member 8 is a ceramic chip component and can be fixed to the lead frame 100 by soldering. Therefore, in the process of mounting the semiconductor elements 11 by soldering, the insulating support member 8 can be installed at a predetermined position of the lead frame 100 simultaneously with the semiconductor elements 11. With such a configuration, the manufacturing of the lead frame 100 becomes easier.

[0041] Also, in Embodiment 1, the N lead 101 branches from the side facing the AC lead 103 and includes both-end support lead side protruding portions 14 that protrude along the tip portion of the AC lead 103. The insulating support member 8 connects the both-end support lead side protruding portions 14 and the AC lead 103. The insulating support member 8 is installed at a location on the upper surface (+Z direction side surface) of the lead frame 100 where the semiconductor elements 11 and the bonding wires 15 are not installed. Therefore, since the semiconductor elements 11 and the bonding wires 15 are not installed on the both-end support lead side protruding portions 14, it becomes easier to position the insulating support member 8 when attaching the insulating support member 8 to the lead frame 100. Further, in Embodiment 1, the installation direction of the insulating support member 8 is the X direction. For example, the size in the longitudinal direction of the insulating support member 8 can be made smaller than when it is installed in an oblique direction.

[0042] In Embodiment 1, a ceramic chip component is used as the insulating support member 8. With such a configuration, not only can the leads be connected in an electrically independent state, but also, since a chip component formed of a material with high thermal conductivity is used for the insulating support member 8, the heat dissipation performance with respect to the heat generated from the semiconductor element 11 can be enhanced. As the ceramic chip component, for example, aluminum nitride or silicon nitride is used. Further, the insulating support member 8, which is a ceramic chip component, has metal pieces at both ends. By soldering at the portions of the metal pieces at both ends of the insulating support member 8, the insulating support member 8 can be installed on the lead frame 100, so that the insulating support member 8 can be attached to the lead frame 100 more firmly than when installed using an adhesive.

[0043] Also, in Embodiment 1, a resin piece made of epoxy resin or silicone resin may be used as the insulating support member 8. In this case, the insulating support member 8 is attached to the lead frame 100 using an adhesive. As a result, the material is less expensive than using a ceramic chip component having metal pieces at both ends for the insulating support member 8, and further, since it has a simple shape of a rectangular parallelepiped, the insulating support member 8 can be manufactured more easily.

[0044] Here, when the resin piece made of epoxy resin or silicone resin is the insulating support member 8, after the insulating support member 8 is adhered to the lead frame 100 using an epoxy-based adhesive or a silicone-based adhesive, the situation when a plurality of semiconductor elements 11 are installed on the lead frame 100 by soldering will be described. During soldering, the portion of the lead frame 100 where the semiconductor element 11 is mounted becomes particularly hot to melt the solder, and a temperature change occurs in the entire lead frame 100. Due to this temperature change, the lead frame 100 and the semiconductor element 11 deform due to thermal expansion or thermal contraction. In the lead frame 100, warpage in the Z direction may occur. At this time, since the linear expansion coefficients of the lead frame 100 and the semiconductor element 11 are different, among the lead frame 100, the deformation amounts of the N lead 101 where the semiconductor element 11 is not mounted, the P lead 102 where the semiconductor element 11 is mounted, and the AC lead 103 may be different.

[0045] In Embodiment 1, since the semiconductor element 11 is not mounted on the N lead 101, the deformation amount is smaller than that of the P lead 102 or the AC lead 103. However, since the insulating support member 8 connects between the N lead 101 where the semiconductor element 11 is not mounted and the AC lead 103 where the semiconductor element 11 is mounted, the deformation amount of the N lead 101 becomes larger than when not connected, and the deformation of the entire lead frame 100 also becomes larger.

[0046] However, the resin piece made of silicone resin is, for example, rubber and is formed of a low-elasticity material, so it is more likely to deform than the lead frame 100. Therefore, stress concentration on the connected N lead 101 and AC lead 103 can be alleviated, and warpage of the entire lead frame 100 can be reduced.

[0047] In addition, due to the deformation of the lead frame 100 and the semiconductor element 11 caused by temperature change, stress is applied to the epoxy-based adhesive or the silicone-based adhesive that adheres the insulating support member 8 to the lead frame 100.

[0048] However, if the insulating support member 8 is a resin piece made of silicone resin, for example, it is rubber, formed of a material with low elasticity, and is more likely to deform. Therefore, since stress concentration on an epoxy-based adhesive or a silicone-based adhesive can be alleviated, even when the semiconductor element 11 is soldered to the lead frame 100, the insulating support member 8 is less likely to peel off from the lead frame 100.

[0049] Note that the resin piece made of silicone resin is preferably formed of a material having a lower elastic modulus than that of a cured epoxy-based adhesive or a silicone-based adhesive, but is not limited thereto.

[0050] Further, the insulating support member 8 is not limited to a rectangular parallelepiped shape, and may have, for example, a cubic shape.

[0051] In the first embodiment, the connection direction of the insulating support member 8 is the X direction, but it is not limited thereto. For example, it may be the Y direction or an oblique direction. The installation location of the insulating support member 8 may be any location on the same surface of the lead frame 100 where the semiconductor element 11 and the bonding wire 15 are not installed, on the same surface as the surface where the semiconductor element 11 is installed. Further, the position where the insulating support member 8 is installed is not limited to the tip of the AC lead 103, and may be other than the tip of the AC lead 103.

[0052] Further, the first both-end support lead may be either the N lead 101 or the P lead 102.

[0053] ***Description of semiconductor device 500*** Next, the semiconductor device 500 will be described. FIG. 3 is a top view of the semiconductor device 500 in the first embodiment. FIG. 4 is a top view showing the inside of the encapsulating resin body 6 of the semiconductor device 500 in the first embodiment visualized. FIG. 5 is a cross-sectional view taken along the section line A-A of FIG. 3.

[0054] In FIGS. 3, 4, and 5, the semiconductor device 500 includes a lead frame 100 on which semiconductor elements 11 are mounted in a row on one side, a sealing resin body 6 that covers the inside of the outer periphery of the lead frame 100, a heat dissipation insulating sheet 9 attached to the surface opposite to the surface on which the semiconductor elements 11 are mounted, and a cooler 10 attached to the lead frame 100 via the heat dissipation insulating sheet 9. The lead frame 100 includes an N lead 101, a P lead 102, and an AC lead 103.

[0055] Both ends of the N lead 101 extend outside the sealing resin body 6, and it has an N electrode 1 at one end. Also, both ends of the P lead 102 extend outside the sealing resin body 6, and it has a P electrode 2 at one end. Furthermore, the other end (base end) of the AC lead 103 extends outside the sealing resin body 6, and it has an AC electrode 3 at the other end. Note that one end (tip end) of the AC lead 103 is provided inside the sealing resin body 6.

[0056] The semiconductor elements 11 are mounted in a row on the upper surfaces (+Z direction side surfaces) of the P lead 102 and the AC lead 103. Also, an insulating support member 8 that connects the N lead 101 and the AC lead 103 and supports the AC lead 103 is provided between the N lead 101 and the AC lead 103.

[0057] The heat dissipation insulating sheet 9 is attached to the lower surfaces (-Z direction side surfaces) of the N lead 101, the P lead 102, and the AC lead 103 (the surfaces opposite to the surface on which the semiconductor elements 11 are mounted). Also, the cooler 10 is attached to the lower surface (-Z direction side surface) of the heat dissipation insulating sheet 9. The cooler 10 has a portion sealed by the sealing resin body 6 and a portion not sealed by the sealing resin body 6.

[0058] The N electrode 1, the N lead 101, the P electrode 2, the P lead 102, the AC electrode 3, the AC lead 103, the suspension lead 4, and the suspension lead 5 are formed as a lead frame 100 integral with the outer frame 7 as shown in FIG. 1 in the state before the tie bar cut for removing the outer frame 7 including the tie bars 12 and 13.

[0059] The encapsulation resin body 6 is formed inside the outer frame 7 of the lead frame 100 having the outer frame 7 in FIG. 1. The semiconductor device 500 is in the final form after removing the outer frame 7 after the encapsulation resin body 6 is formed. Note that the resin material of the encapsulation resin body 6 may be any thermosetting resin. For example, it may be an epoxy resin material added with an insulating inorganic filler. The insulating inorganic filler is, for example, aluminum nitride, silicon nitride, boron nitride, alumina (aluminum oxide), crystalline silica (silicon dioxide (SiO2)), or the like. Further, since heat dissipation is not essential for the encapsulation resin body 6 in the first embodiment, fused silica (silicon dioxide (SiO2)) may be used in addition to the inorganic filler.

[0060] The semiconductor device 500 includes three electrodes from the first to the third. As the first electrode, the N electrode 1 is connected to the negative side of the bias power supply, and as the second electrode, the P electrode 2 is connected to the positive side of the bias power supply. And as the third electrode, the AC electrode 3 plays a role of outputting an output signal from the inverter.

[0061] The N lead 101, the P lead 102, and the AC lead 103 all have a rectangular parallelepiped shape extending in the X direction. The N lead 101 and the P lead 102 are arranged side by side with a space therebetween, and the AC lead 103 is arranged side by side with a space between the N lead 101 and the P lead 102. The N lead 101 has the N electrode 1 at the end on the -X direction side, the P lead 102 has the P electrode 2 at the end on the -X direction side, and the AC lead 103 has the AC electrode 3 at the end on the +X direction side.

[0062] The N lead 101 is an example of the first both-end support lead. Both ends of the N lead 101 extend outside the encapsulation resin body 6. In the state before the tie bar cut for removing the outer frame 7, as shown in FIG. 1, the N electrode 1 and the suspension lead 4 are connected to the outer frame 7. Therefore, it can be said that both ends of the N lead 101 are supported by the outer frame 7 via the N electrode 1 and the suspension lead 4.

[0063] The N lead 101, which is the first both-end supported lead, branches in the -Y direction from the side facing the AC lead 103 and has a both-end supported lead side protruding portion 14 that protrudes along one end portion (tip portion) of the AC lead 103.

[0064] The P lead 102 is an example of the second both-end supported lead. Both end portions of the P lead 102 extend outside the encapsulating resin body 6. In the state before the tie bar cut for removing the outer frame 7, as shown in FIG. 1, the P electrode 2 and the suspension lead 5 are connected to the outer frame 7. Therefore, it can be said that both end portions of the P lead 102 are supported by the outer frame 7 via the P electrode 2 and the suspension lead 5.

[0065] The AC lead 103 is an example of a one-end supported lead. The other end portion (base end portion) of the AC lead 103 extends outside the encapsulating resin body 6. In the state before the tie bar cut for removing the outer frame 7, as shown in FIG. 1, the AC electrode 3 provided at the other end portion is connected to the outer frame 7. Therefore, it can be said that the other end portion (base end portion) of the AC lead 103 is supported by the outer frame 7 via the AC electrode 3.

[0066] The suspension lead 4 extends in the +Y direction, which is a direction perpendicular to the longitudinal direction of the N lead 101, from near the tip of the end portion on the opposite side (+X direction side) of the N electrode 1 among both end portions of the N lead 101. The suspension lead 4 is connected to the outer frame 7 in the state of the lead frame 100 in FIG. 1. Being connected to the outer frame 7 can also be said that the N lead 101 is suspended by the outer frame 7, and the suspension lead 4 plays a role of fixing the N lead 101 to the outer frame 7. Also, the suspension lead 5 extends in the -Y direction, which is a direction perpendicular to the longitudinal direction of the P lead 102, from near the tip of the end portion on the opposite side (+X direction side) of the P electrode 2 among both end portions of the P lead 102. The suspension lead 5 is connected to the outer frame 7 in the state of the lead frame 100 in FIG. 1. Being connected to the outer frame 7 can also be said that the P lead 102 is suspended by the outer frame 7, and the suspension lead 5 plays a role of fixing the P lead 102 to the outer frame 7.

[0067] The semiconductor element 11 is mounted in a row on the upper surfaces (the surfaces on the +Z direction side) of the P lead 102 and the AC lead 103. The semiconductor element 11 is, for example, a power semiconductor element such as an IGBT (Insulated Gate Bipolar Transistor), a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), or a diode. Further, the power semiconductor element may be an RC-IGBT (Reverse-Conducting IGBT) in which an IGBT and a freewheeling diode are formed in one semiconductor substrate. Note that the semiconductor element 11 is not limited to a power semiconductor element.

[0068] The semiconductor chip constituting the semiconductor element 11 is preferably formed of silicon (Si), but is not limited to silicon (Si). The semiconductor chip of the semiconductor element 11 is, for example, silicon carbide (SiC), a gallium nitride-based material (for example, gallium nitride (GaN)), or diamond. Note that the semiconductor chip constituting the semiconductor element 11 may use one of the materials of silicon carbide (SiC), a gallium nitride-based material (for example, gallium nitride (GaN)), or diamond alone, or may use them in combination.

[0069] The heat dissipation insulating sheet 9 is disposed on the surface of the lead frame 100 opposite to the surface on which the semiconductor element 11 is mounted (the surface on the -Z direction side). The heat dissipation insulating sheet 9 is attached in a state of being in close contact with the lead frame 100, and the entire heat dissipation insulating sheet 9 is covered with the sealing resin body 6. The heat dissipation insulating sheet 9 is, for example, an insulating resin to which an inorganic filler having high thermal conductivity is added. The inorganic filler having high thermal conductivity is, for example, an epoxy resin added with an insulating and highly thermally conductive inorganic filler such as aluminum nitride, silicon nitride, boron nitride, alumina (aluminum oxide), or crystalline silica (silicon dioxide (SiO2)). The heat dissipation insulating sheet 9 has a function of adhering the lead frame 100 and the cooler 10. And, since the heat dissipation insulating sheet 9 is an insulating resin, it plays a role of electrically insulating the lead frame 100 and the cooler 10, and also plays a role of dissipating the heat generated from the semiconductor element 11 to the cooler 10.

[0070] The cooler 10 is disposed on the surface opposite to the surface (-Z direction side surface) where the lead frame 100 of the heat dissipation insulating sheet 9 is adhered. The cooler 10 is attached in a state of being in close contact with the heat dissipation insulating sheet 9. A part of the cooler 10 (+Z direction side part) is covered inside the encapsulating resin body 6, and the other part of the cooler 10 (-Z direction side part) is exposed from the encapsulating resin body 6. The material of the cooler 10 is, for example, a metal such as copper or aluminum, or an alloy of copper or aluminum. Note that the cooler 10 may be a metal material with excellent heat dissipation properties. Also, the cooler 10 may have plating on its surface.

[0071] ***Description of the effects of the semiconductor device 500*** The semiconductor device 500 in Embodiment 1 includes a lead frame 100 on which semiconductor elements 11 are mounted in a row on one side, an encapsulating resin body 6 formed inside the outer periphery of the lead frame 100, a heat dissipation insulating sheet 9 attached to the surface opposite to the surface on which the semiconductor elements 11 are mounted, and a cooler 10 attached to the lead frame 100 via the heat dissipation insulating sheet 9. Both ends of the lead frame 100 extend outside the encapsulating resin body 6. The N lead 101 has an N electrode 1 at one of both ends, and the P lead 102 is provided side by side with a space from the N lead 101. Both ends of the P lead 102 extend outside the encapsulating resin body 6, and the P lead 102 has a P electrode 2 at one of both ends. Further, the lead frame 100 has an AC electrode 3 provided side by side with a space between the N lead 101 and the P lead 102, with the base end portion extending outside the encapsulating resin body 6, and an AC lead 103 with the tip portion provided inside the encapsulating resin body 6, and an insulating support member 8 that connects the AC lead 103 and the N lead 101 and supports the AC lead 103. And at least one of the N electrode 1 and the P electrode 2 is provided on the side opposite to the side where the AC electrode 3 is disposed.

[0072] By having such a configuration, the semiconductor device 500 in Embodiment 1 includes a lead frame 100 with semiconductor elements 11 mounted in a row on one side, a heat dissipation insulating sheet 9 attached to the side opposite to the surface where the semiconductor elements 11 are mounted, and a cooler 10 attached to the lead frame 100 via the heat dissipation insulating sheet 9. With such a configuration, the heat dissipation insulating sheet 9 can electrically insulate between the lead frame 100 and the cooler 10 while enhancing the heat dissipation property from the lead frame 100 to the cooler 10 against the heat generated by the semiconductor elements 11.

[0073] Also, in the semiconductor device 500 in Embodiment 1, the AC lead 103 provided between the N lead 101 and the P lead 102 has, for example, a tip portion that is the free end connected to the N lead 101 by an insulating support member 8, so that the tip portion of the AC lead 103 is supported by the insulating support member 8. In other words, it can be said that the tip portion of the AC lead 103 is held at the installation height of the insulating support member 8. With such a configuration, the sag of the AC lead 103 can be suppressed without providing a hanging lead on the AC lead 103 sandwiched between the N lead 101 and the P lead 102.

[0074] Moreover, in the semiconductor device 500 in Embodiment 1, by providing the insulating support member 8, the sag of the tip portion of the AC lead 103 can be suppressed, so there is no need to newly provide a hanging lead for the tip portion of the AC lead 103. Therefore, it is not necessary to secure the insulation distance between at least one of the N electrode 1 and the P electrode 2 provided on the side opposite to the side where the AC electrode 3 is disposed and the hanging lead. As a result, the size of the encapsulating resin body 6 can be reduced compared to the case where a hanging lead is provided for the tip portion of the AC lead 103. By providing a lead frame 100 with such a configuration, the size of the semiconductor device 500 can be reduced.

[0075] In addition, in the lead frame 100 of Embodiment 1, the P lead 102 and the AC lead 103 have the semiconductor elements 11 mounted in a row on one side, and the insulating support member 8 is provided on the same surface as the surface on which the semiconductor elements 11 are mounted. The insulating support member 8 is a ceramic chip component and can be fixed to the lead frame 100 by soldering. Therefore, in the process of mounting the semiconductor elements 11 by soldering, the insulating support member 8 can be installed at a predetermined position of the lead frame 100 simultaneously with the semiconductor elements 11. With such a configuration, the manufacturing of the lead frame 100 becomes easier.

[0076] In addition, in Embodiment 1, the N lead 101 branches from the side facing the AC lead 103 and includes both-end support lead side protrusions 14 that protrude along the tip of the AC lead 103, and the insulating support member 8 connects the both-end support lead side protrusions 14 and the AC lead 103. The insulating support member 8 is installed at a location on the upper surface (+Z direction side surface) of the lead frame 100 where the semiconductor elements 11 and the bonding wires 15 are not installed. Therefore, since the semiconductor elements 11 and the bonding wires 15 are not installed on the both-end support lead side protrusions 14, it becomes easier to position the insulating support member 8 when attaching the insulating support member 8 to the lead frame 100. Also, in Embodiment 1, the installation direction of the insulating support member 8 is the X direction. For example, the size in the longitudinal direction of the insulating support member 8 can be made smaller than when installed in an oblique direction.

[0077] ***Explanation of the manufacturing method of the semiconductor device 500*** Next, a manufacturing method of the semiconductor device 500 using the lead frame 100 will be described.

[0078] First, prepare the copper-made lead frame 100 shown in FIG. 1. Note that the material of the lead frame 100 is preferably formed of copper or an alloy mainly composed of copper, but any material with conductivity and heat conductivity may be used.

[0079] Next, on the upper surfaces (+Z-direction side surfaces) of the P lead 102 and the AC lead 103 among the lead frames 100, at least two or more semiconductor elements 11 are arranged in a row in the X direction with a constant interval between each semiconductor element 11. At the same time as installing the semiconductor elements 11, an insulating support member 8 is installed on the surface on the same side as the installation surface of the semiconductor elements 11 so as to connect the -X-direction side end of the AC lead 103 and the both-end support lead side protruding portions 14. Then, the semiconductor elements 11 and the insulating support member 8 are soldered using a bonding material such as a solder material and fixed at predetermined positions on the lead frame 100. Note that the solder material is preferably a lead (Pb)-free solder material. Also, the bonding material is not limited to the solder material, and a silver paste or a sintered material may be used.

[0080] Next, the upper surface (+Z-direction side surface) of the semiconductor element 11 installed on the upper surface (+Z-direction side surface) of the P lead 102 and the upper surface (+Z-direction side surface) of the AC lead 103 are connected using a bonding wire 15. Also, the upper surface (+Z-direction side surface) of the semiconductor element 11 installed on the upper surface (+Z-direction side surface) of the AC lead 103 and the upper surface (+Z-direction side surface) of the N lead 101 are connected using a bonding wire 15. Note that the material of the bonding wire 15 is preferably aluminum with high bonding reliability, but copper, gold, or silver may also be used.

[0081] Next, a heat dissipation insulating sheet 9 is installed on the upper surface (+Z-direction side surface) of the cooler 10, and the cooler 10 and the heat dissipation insulating sheet 9 are adhered to each other. The cooler 10 is formed of an aluminum metal plate or a metal block.

[0082] Next, with the cooler 10 attached to the lead frame 100 via the heat dissipation insulating sheet 9, it is installed at a predetermined position in the transfer mold forming die and transfer mold forming is performed. In transfer mold forming, by applying pressure using the resin for transfer mold forming, the resin for transfer mold forming and the heat dissipation insulating sheet 9 are cured. Note that the resin for transfer mold forming and the heat dissipation insulating sheet 9 do not necessarily need to be completely cured after transfer mold forming, and it is sufficient if they are cured to the extent that they can be taken out of the transfer mold forming die after transfer mold forming. In that case, after taking out from the transfer mold forming die after transfer mold forming, it may be cured in a curing furnace. Also, the resin for transfer mold forming may be any thermosetting resin, for example, an epoxy resin added with an insulating inorganic filler. The insulating inorganic filler is, for example, aluminum nitride, silicon nitride, boron nitride, alumina (aluminum oxide), crystalline silica (silicon dioxide (SiO2)), etc. Also, since heat dissipation is not essential for the encapsulating resin body 6 in Embodiment 1, the resin for transfer mold forming may use fused silica (silicon dioxide (SiO2)) in addition to the inorganic filler.

[0083] Next, the transfer mold formed molded product is put into a curing furnace. As shown in FIG. 5, the encapsulating resin body 6 is in a state after the transfer mold formed molded product is cured in the curing furnace.

[0084] Finally, among the outer frame 7 that extends outside the encapsulating resin body 6, the outer frame 7 including the tie bars 12 and 13, excluding the N electrode 1, the P electrode 2, and the AC electrode 3, is removed by tie bar cutting. After tie bar cutting, as shown in FIG. 3, a part of the suspension lead 4 extending in the +Y direction and a part of the suspension lead 5 extending in the -Y direction remain outside the encapsulating resin body 6 of the semiconductor device 500.

[0085] Here, when a ceramic chip component is used as the insulating support member 8, the verification results regarding whether the sagging of the lead frame 100 can be suppressed will be described. The insulating support member 8, which is a ceramic chip component, uses three types of sizes for the length, width, and height, for example, 3.2 mm × 1.6 mm × 0.76 mm as size 1, 3.2 mm × 6.4 mm × 0.76 mm as size 2, and 3.2 mm × 1.6 mm × 1.2 mm as size 3.

[0086] As a result of the verification, it was confirmed that there were no problems with the electrical characteristics of the semiconductor device 500 manufactured using the insulating support members 8 of size 1, size 2, and size 3. Also, when the heat dissipation insulating sheet 9 was observed from the lower surface (-Z direction side surface) of the cooler 10 using an ultrasonic flaw detector, it was confirmed that there were no problems with the adhesiveness between the heat dissipation insulating sheet 9 and the cooler 10 and the adhesiveness between the heat dissipation insulating sheet 9 and the lead frame 100. On the other hand, when the semiconductor device 500 was manufactured without using the insulating support member 8, sagging occurred at the end of the AC lead 103 on the -X direction side of the lead frame 100 at the stage of attaching the cooler 10 to the lead frame 100 via the heat dissipation insulating sheet 9. Thus, it was experimentally proven that using a ceramic chip component as the insulating support member 8 can suppress the sagging of the lead frame 100.

[0087] Next, when a resin sheet made of epoxy resin is used as the insulating support member 8, the results of verification using an epoxy-based adhesive or a silicone-based adhesive regarding the adhesiveness between the insulating support member 8 and the lead frame 100 will be described. First, a resin sheet made of epoxy resin cured into a rectangular parallelepiped shape with dimensions of, for example, 3.2 mm × 3.2 mm × 1 mm for the length, width, and height is prepared as the insulating support member 8.

[0088] Next, an epoxy-based adhesive is applied to the upper surface (+Z-direction side surface) of the both-end support lead side protrusion 14 of the N lead 101 and the upper surface (+Z-direction side surface) near the tip of the -X-direction side end of the AC lead 103 which is a one-end support lead. Then, as shown in FIG. 1, the insulating support member 8 which is a resin piece made of epoxy resin is placed on the adhesive application surface with the longitudinal direction of the insulating support member 8 aligned in the X direction and installed so that both ends are placed thereon.

[0089] Next, the semiconductor element 11 is soldered to the upper surfaces (+Z-direction side surfaces) of the P lead 102 and the AC lead 103 using a bonding material such as a solder material and fixed to a predetermined position of the lead frame 100. Then, the upper surface (+Z-direction side surface) of the semiconductor element 11 installed on the upper surface (+Z-direction side surface) of the P lead 102 and the upper surface (+Z-direction side surface) of the AC lead 103 are electrically connected using the bonding wire 15. Then, transfer molding is performed and a die cut is carried out to manufacture the semiconductor device 500.

[0090] Similarly, the semiconductor device 500 is manufactured using a silicone-based adhesive instead of the epoxy-based adhesive.

[0091] As a result of verification, in the manufacture of the semiconductor device 500, when either an epoxy-based adhesive or a silicone-based adhesive is used as the adhesive for fixing the insulating support member 8 which is a resin piece made of epoxy resin to the lead frame 100, it was confirmed that there are no problems with the electrical characteristics. Further, when the heat dissipation insulating sheet 9 was observed from the lower surface (-Z-direction side surface) of the cooler 10 using an ultrasonic flaw detector, it was confirmed that there are no problems with the adhesiveness between the heat dissipation insulating sheet 9 and the cooler 10 and the adhesiveness between the heat dissipation insulating sheet 9 and the lead frame 100.

[0092] ***Explanation of the effects of the manufacturing method of the semiconductor device 500*** The manufacturing method in Embodiment 1 is a manufacturing method of a semiconductor device 500. A semiconductor element 11 is mounted in a row on one side of a lead frame 100, and an insulating support member 8 is attached. With the heat dissipation insulating sheet 9 and the cooler 10 arranged in this order on the side opposite to the surface of the lead frame 100 on which the semiconductor element 11 is mounted, a sealing resin body 6 that seals the lead frame 100, the heat dissipation insulating sheet 9, and the cooler 10 is molded by transfer molding. With such a configuration, the sag of the AC lead 103 can be suppressed without providing a suspension lead between the N lead 101 and the P lead 102. Also, the heat dissipation insulating sheet 9 can dissipate the heat generated from the semiconductor element 11 to the cooler 10 while electrically insulating between the lead frame 100 and the cooler 10.

[0093] Here, the relationship between the sag of the lead frame 100 and the heat dissipation performance of the semiconductor device 500 that occurs when the insulating support member 8 is not used in the manufacturing process of the conventional semiconductor device will be described.

[0094] First, the sag of the lead frame 100 occurs when, like the end portion on the -X direction side of the AC lead 103 which is a one-end supported lead in Embodiment 1, it is not connected to the outer frame 7 by a suspension lead or the like and is a free end. When manufacturing the lead frame 100 without using the insulating support member 8, both during the manufacturing of the lead frame 100 and when installing it in the transfer molding die, since the -Z direction, which is the side opposite to the surface on which the semiconductor element 11 is installed in FIG. 1, is the direction of gravity, there is a high possibility that the end portion on the -X direction side of the AC lead 103 sags due to its own weight at the stage before transfer molding.

[0095] When drooping occurs at the end of the AC lead 103 on the -X direction side, when attaching the lead frame 100 to the surface of the heat dissipation insulating sheet 9 opposite to the cooler 10 that is adhered to the cooler 10, the edge of the drooping end of the AC lead 103 on the -X direction side comes into contact with the heat dissipation insulating sheet 9, so the heat dissipation insulating sheet 9 may be damaged. Further, since drooping occurs at the end of the AC lead 103 on the -X direction side, there may also be a gap generated between the AC lead 103 and the heat dissipation insulating sheet 9.

[0096] Then, since the adhesiveness between the AC lead 103 and the heat dissipation insulating sheet 9 deteriorates, the heat dissipation property of the heat dissipation insulating sheet 9 may decrease. Also, when power is applied to the semiconductor device 500, the gap generated between the AC lead 103 and the heat dissipation insulating sheet 9 will cause a discharge phenomenon where dielectric breakdown occurs in the gas that enters the gap and current flows, which may have an adverse effect on the semiconductor device 500.

[0097] However, by connecting the N lead 101 and the AC lead 103 with the insulating support member 8, the drooping at the end of the AC lead 103 on the -X direction side can be suppressed, so damage to the heat dissipation insulating sheet 9 and poor adhesion between the lead frame 100 and the heat dissipation insulating sheet 9 can be prevented, and the heat dissipation property of the heat dissipation insulating sheet 9 can be enhanced.

[0098] Also, in Embodiment 1, with the heat dissipation insulating sheet 9 sandwiched between the lead frame 100 and the cooler 10, it is integrally transfer molded. In transfer molding, while applying pressure, the resin for transfer molding and the heat dissipation insulating sheet 9 are cured, so both the adhesiveness between the lead frame 100 and the heat dissipation insulating sheet 9 and the adhesiveness between the heat dissipation insulating sheet 9 and the cooler 10 are increased. As a result, in Embodiment 1, insulation can be ensured between the lead frame 100 and the cooler 10 by another method, and there is no need to use heat dissipation grease, and the thermal resistance can be reduced more than when using heat dissipation grease.

[0099] Embodiment 2. The configuration of the lead frame 200 in Embodiment 2 will be described. The lead frame 200 according to Embodiment 2 is different from the lead frame 100 according to Embodiment 1 in that it includes N leads 201 instead of N leads 101 and the arrangement of the insulating support member 8 is different. Other configurations of the lead frame 200 are the same as or equivalent to those of the lead frame 100, and overlapping descriptions will be omitted.

[0100] FIG. 6 is a top view of the lead frame (after mounting a semiconductor element and installing bonding wires) before the tie bar cut in Embodiment 2. The lead frame 200 of Embodiment 2 includes N leads 201 without the both-end support lead side protrusions 14. And the lead frame 200 includes an insulating support member 8 that connects the upper surface (+Z direction side surface) of the N leads 201 and the upper surface (+Z direction side surface) near the tip of the -X direction side end of the AC leads 103 in a state where the longitudinal direction is aligned in the Y direction.

[0101] With the lead frame 200 having such a configuration in Embodiment 2, for example, the tip of the AC lead 103, which is a free end, is connected to the N lead 201 by the insulating support member 8, so that the tip of the AC lead 103 is supported by the insulating support member 8. That is, it can be said that the tip of the AC lead 103 is held at the installation height of the insulating support member 8. With such a configuration, the sag of the AC lead 103 can be suppressed without providing a suspension lead for the AC lead 103 sandwiched between the N lead 201 and the P lead 102. Also, by providing the insulating support member 8, the sag of the tip of the AC lead 103 can be suppressed, so there is no need to newly provide a suspension lead for the tip of the AC lead 103. Therefore, since it is not necessary to secure the insulation distance between at least one of the N electrode 1 and the P electrode 2 provided on the side opposite to the side where the AC electrode 3 is disposed and the suspension lead, the size of the sealing resin body 6 that covers the inside of the outer periphery of the lead frame 200 can be made smaller than when a suspension lead is provided for the tip of the AC lead 103.

[0102] Note that, in the second embodiment, the insulating support member 8 has the connecting direction as the Y direction, but it is not limited thereto, and for example, it may be an oblique direction. Further, the installation location of the insulating support member 8 may be any location on the same surface of the lead frame 200 where the semiconductor element 11 and the bonding wire 15 are not installed, on the same surface as the surface where the semiconductor element 11 is installed. Furthermore, the position where the insulating support member 8 is installed is not limited to the tip of the AC lead 103, and may be other than the tip of the AC lead 103.

[0103] Embodiment 3. The configuration of the lead frame 300 in Embodiment 3 will be described. The lead frame 300 according to Embodiment 3 is different from the lead frame 100 according to Embodiment 1 in that it includes an N lead 301 instead of the N lead 101 and the arrangement of the insulating support member 8 is different. Other configurations of the lead frame 300 are the same as or equivalent to those of the lead frame 100, and overlapping descriptions will be omitted.

[0104] FIG. 7 is a top view of the lead frame (after mounting the semiconductor element and installing the bonding wire) before the tie bar cut in Embodiment 3. The lead frame 300 of Embodiment 3 includes an N lead 301 without the both-end support lead side protrusion 14. The N lead 301 has an N electrode 1 at the end on the +X direction side and is connected to the outer frame 7 via the N electrode 1. And the lead frame 300 includes an insulating support member 8 that connects the upper surface (+Z direction side surface) of the P lead 102 and the upper surface (+Z direction side surface) near the tip of the end on the -X direction side of the AC lead 103 in a state where the longitudinal direction is aligned in the Y direction.

[0105] By having such a configuration, the lead frame 300 in Embodiment 3 enables the AC lead 103 provided between the N lead 301 and the P lead 102 to have, for example, a tip portion as a free end connected to the P lead 102 by the insulating support member 8, so that the tip portion of the AC lead 103 is supported by the insulating support member 8. That is, it can be said that the tip portion of the AC lead 103 is held at the installation height of the insulating support member 8. With such a configuration, sagging of the AC lead 103 can be suppressed without providing a suspension lead for the AC lead 103 sandwiched between the N lead 301 and the P lead 102. Also, by providing the insulating support member 8, sagging of the tip portion of the AC lead 103 can be suppressed, so there is no need to newly provide a suspension lead for the tip portion of the AC lead 103. Therefore, since it is not necessary to secure the insulation distance between the P electrode 2 provided on the side opposite to the side where the AC electrode 3 is disposed and the suspension lead, the size of the sealing resin body 6 that covers the inside of the outer periphery of the lead frame 300 can be reduced compared to the case where a suspension lead is provided for the tip portion of the AC lead 103.

[0106] Note that in Embodiment 3, the connecting direction of the insulating support member 8 is the Y direction, but it is not limited thereto, and for example, it may be an oblique direction. Also, the installation location of the insulating support member 8 may be any location on the same surface of the lead frame 300 where the semiconductor element 11 is installed and where the semiconductor element 11 and the bonding wire 15 are not installed. Furthermore, the position where the insulating support member 8 is installed is not limited to the tip portion of the AC lead 103 and may be other than the tip portion of the AC lead 103.

[0107] Embodiment 4. The configuration of the lead frame 400 in Embodiment 4 will be described. The lead frame 400 according to Embodiment 4 differs from the lead frame 200 according to Embodiment 2 in that it includes a P lead 402 instead of the P lead 102. The other configurations of the lead frame 400 are the same as or equivalent to those of the lead frame 200, and redundant descriptions will be omitted.

[0108] FIG. 8 is a top view of the lead frame before the tie bar cut in Embodiment 4 (after mounting the semiconductor element and installing the bonding wires). The lead frame 400 of Embodiment 4 includes a P lead 402 having a P electrode 2 at the end on the +X direction side. The P lead 402 is connected to the outer frame 7 via the P electrode 2.

[0109] With the lead frame 400 in Embodiment 4 having such a configuration, the AC lead 103 provided between the N lead 201 and the P lead 402 has, for example, a tip portion that is a free end and is connected to the N lead 201 by the insulating support member 8, so that the tip portion of the AC lead 103 is supported by the insulating support member 8. That is, it can be said that the tip portion of the AC lead 103 is held at the installation height of the insulating support member 8. With such a configuration, the sag of the AC lead 103 can be suppressed without providing a suspension lead for the AC lead 103 sandwiched between the N lead 201 and the P lead 402. Further, by providing the insulating support member 8, the sag of the tip portion of the AC lead 103 can be suppressed, so there is no need to newly provide a suspension lead for the tip portion of the AC lead 103. Therefore, since it is not necessary to secure the insulation distance between the N electrode 1 provided on the side opposite to the side where the AC electrode 3 is disposed and the suspension lead, the size of the sealing resin body 6 that covers the inside of the outer periphery of the lead frame 400 can be made smaller than when a suspension lead is provided for the tip portion of the AC lead 103.

[0110] Note that the installation location of the insulating support member 8 may be on the same surface of the lead frame 400 where the semiconductor element 11 is installed and where the semiconductor element 11 and the bonding wires 15 are not installed. Further, the position where the insulating support member 8 is installed is not limited to the tip portion of the AC lead 103 and may be other than the tip portion of the AC lead 103.

Description of Reference Numerals

[0111] 1 N electrode (first electrode) 2 P electrode (second electrode) 3 AC electrode (third electrode) 4 Suspension lead 5 Suspension lead 6 Encapsulating resin body 7 Outer frame 8 Insulating support member 9 Heat dissipation insulating sheet 10 Cooler 11 Semiconductor element 12 Tie bar 13 Tie bar 14 Both - end support lead side protrusion 15 Bonding wire 16 Metal plate 100, 200, 300, 400 Lead frame 500 Semiconductor device 101, 201, 301 N - lead (first both - end support lead) 102, 402 P - lead (second both - end support lead) 103 AC lead 103 (one - end support lead)

Claims

1. A first both-end support lead having both ends connected to an outer frame and having a first electrode at either one of the both ends, a second both-end support lead provided side by side with a space from the first both-end support lead, having both ends connected to the outer frame and having a second electrode at either one of the both ends, a one-end support lead provided side by side with a space between the first both-end support lead and the second both-end support lead, having a third electrode with a base end connected to the outer frame and a tip end being a free end, an insulating support member that connects the one-end support lead and the first both-end support lead and supports the one-end support lead, and a lead frame in which at least one of the first electrode and the second electrode is provided on a side opposite to the side where the third electrode is disposed.

2. On the one-end support lead and either the first both-end support lead or the second both-end support lead, semiconductor elements are mounted in a row on one side, and the insulating support member is provided on the same surface as the surface on which the semiconductor elements are mounted, The lead frame according to claim 1.

3. The first both-end support lead includes a both-end support lead side protruding portion that branches from the side facing the one-end support lead and protrudes along the tip end of the one-end support lead, The insulating support member connects the both-end support lead side protruding portion and the one-end support lead, The lead frame according to claim 1 or claim 2.

4. The insulating support member is a ceramic chip component, The lead frame according to claim 1 or claim 2.

5. The chip component is either aluminum nitride or silicon nitride and has metal pieces at both ends, The lead frame according to claim 4.

6. The insulating support member is a resin piece made of epoxy resin or silicone resin, The lead frame according to claim 1 or claim 2.

7. A lead frame with semiconductor elements mounted in a row on one side, A sealing resin body formed inside from the outer periphery of the lead frame, A heat dissipation insulating sheet attached to the surface opposite to the surface on which the semiconductor elements are mounted, and A cooler attached to the lead frame via the heat dissipation insulating sheet, and The lead frame is A first both-end support lead having both ends extending outside the sealing resin body and having a first electrode at either one of the both ends, The second both-end support lead is provided side by side with a space from the first both-end support lead, both end portions thereof extend outside the encapsulating resin body, and has a second electrode at either one of the both end portions. The one-end support lead is provided side by side with a space between the first both-end support lead and the second both-end support lead, has a third electrode whose base end portion extends outside the encapsulating resin body, and whose tip end portion is provided inside the encapsulating resin body. The semiconductor device includes an insulating support member that connects the one-end support lead and the first both-end support lead and supports the one-end support lead. The semiconductor device, wherein at least one of the first electrode and the second electrode is provided on a side opposite to the side where the third electrode is disposed.

8. The semiconductor element is mounted on the one-end support lead and the first both-end support lead or the second both-end support lead, and the insulating support member is provided on the same surface as the surface on which the semiconductor element is mounted. The semiconductor device according to claim 7.

9. The first both-end support lead includes a both-end support lead side protruding portion that branches from the side facing the one-end support lead and protrudes along the tip end portion of the one-end support lead. The insulating support member connects the both-end support lead side protruding portion and the one-end support lead. The semiconductor device according to claim 7 or claim 8.

10. A method of manufacturing the semiconductor device according to claim 7, mounting the semiconductor elements in a row on one side of the lead frame and attaching the insulating support member, molding the encapsulating resin body that encapsulates the lead frame, the heat-radiating insulating sheet, and the cooler by transfer molding in a state where the heat-radiating insulating sheet and the cooler are arranged in this order on the side opposite to the surface of the lead frame on which the semiconductor elements are mounted. A method of manufacturing a semiconductor device.

Images