Semiconductor device

Abstract

To provide a semiconductor device capable of improving adhesion between a lead and a sealing resin.SOLUTION: A semiconductor device A10 includes: a lead 10 having a main surface 101A facing in a thickness direction z; a semiconductor element mounted on the main surface 101A, and a sealing resin 50 in contact with the main surface 101A and covering the semiconductor element. The lead 10 is formed with a plurality of grooves 20 that are recessed from the main surface 101A and are located apart from each other. The plurality of grooves 20 are located away from a peripheral edge of the main surface 101A.SELECTED DRAWING: Figure 12

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device including leads and a sealing resin.

Background Art

[0002] Patent Document 1 discloses an example of a semiconductor device including a first lead including a first pad having a pad main surface, a semiconductor element mounted on the pad main surface, and a sealing resin that contacts the pad main surface and covers the semiconductor element. The semiconductor element is conductively bonded to the first pad via a bonding layer. The semiconductor device further includes a second lead including a second pad and a wire (first bonding wire) conductively bonded to the semiconductor element and the second pad. The second pad and the wire are covered with the sealing resin. Thus, in the semiconductor device, the semiconductor element and the members related to the conductive path of the semiconductor element are protected from external factors by the sealing resin.

[0003] When the semiconductor device disclosed in Patent Document 1 is used, heat is generated from the semiconductor element. As a result, thermal strain occurs in the first pad, and shear stress is generated at the interface between the pad main surface and the sealing resin. If the concentration of the shear stress becomes excessive, the sealing resin may peel off from the pad main surface, and cracks may occur in the bonding layer intervening between the pad main surface and the semiconductor element. Further, due to the influence of the heat conducted from the semiconductor element to the wire, shear stress is also generated at the bonding interface between the second pad and the wire. As a result, pitting corrosion may occur in the wire. Therefore, it is required to improve the adhesion between the first pad and the second pad and the sealing resin to prevent peeling of the sealing resin and occurrence of defects in the bonding layer and the wire.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In view of the above circumstances, an object of the present disclosure is to provide a semiconductor device capable of improving the adhesion between a lead and a sealing resin.

Means for Solving the Problems

[0006] The semiconductor device provided by the present disclosure includes a lead having a main surface facing the thickness direction, a semiconductor element mounted on the main surface, and a sealing resin that is in contact with the main surface and covers the semiconductor element. A plurality of grooves that are recessed from the main surface and are spaced apart from each other are formed in the lead, and the plurality of grooves are located away from the periphery of the main surface.

Effects of the Invention

[0007] According to the semiconductor device according to the present disclosure, it is possible to improve the adhesion between the lead and the sealing resin.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description based on the accompanying drawings.

Brief Description of the Drawings

[0009]

Figure 1

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Figure 11

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Figure 17

Embodiments for Carrying Out the Invention

[0010] Embodiments for carrying out the present disclosure will be described with reference to the accompanying drawings.

[0011] 〔First Embodiment〕 Based on FIGS. 1 to 12, a semiconductor device A10 according to a first embodiment of the present disclosure will be described. The semiconductor device A10 is used in an electronic device including a power conversion circuit, such as a DC-DC converter. The semiconductor device A10 includes leads 10, semiconductor elements 30, a first bonding layer 39, a plurality of conductive members 40, and a sealing resin 50. Here, FIGS. 3, 8, and 11 are shown through the sealing resin 50 for convenience of understanding. In FIG. 3, the penetrated sealing resin 50 is indicated by an imaginary line (two-dot chain line).

[0012] In the description of the semiconductor device A10, for convenience, the thickness direction of the lead 10 is referred to as the "thickness direction z". The direction orthogonal to the thickness direction z is referred to as the "first direction x". The direction orthogonal to both the thickness direction z and the first direction x is referred to as the "second direction y". When viewed along the thickness direction z, the first direction x corresponds to the longitudinal direction of the semiconductor device A10. When viewed along the thickness direction z, the second direction y corresponds to the short-side direction of the semiconductor device A10.

[0013] As shown in FIGS. 3, 6, and 7, the lead 10 mounts the semiconductor element 30 and is a conductive member that forms part of the conductive path between the semiconductor element 30 and the wiring board on which the semiconductor device A10 is mounted. In the semiconductor device A10, the lead 10 includes a die pad 11 and a plurality of terminals 12 that are separated from each other.

[0014] As shown in FIGS. 6 and 7, the die pad 11 and the plurality of terminals 12 include a base material 101 and a metal layer 102. The base material 101 forms the main part of the lead 10 and is obtained from the same lead frame. The lead frame is copper (Cu) or a copper alloy. Therefore, the composition of the base material 101 includes copper. The base material 101 has a main surface 101A facing one side in the thickness direction z. The metal layer 102 is laminated on the main surface 101A. The thickness of the metal layer 102 is thinner than the thickness of the base material 101. The composition of the metal layer 102 includes silver (Ag). In addition, the composition of the metal layer 102 may include nickel (Ni).

[0015] As shown in FIGS. 3 and 7, the die pad 11 has a pad portion 111 and a terminal portion 112. The pad portion 111 includes a base material 101 and a first metal layer 102A. The base material 101 of the pad portion 111 has a first main surface 111A, a back surface 111B, and a through hole 111C. The first main surface 111A is included in the main surface 101A. The back surface 111B faces the side opposite to the first main surface 111A in the thickness direction z. The back surface 111B is, for example, plated with tin (Sn). The through hole 111C penetrates the pad portion 111 from the first main surface 111A to the back surface 111B in the thickness direction z. The through hole 111C is circular when viewed along the thickness direction z. The first metal layer 102A is laminated on the first main surface 111A. The first metal layer 102A is included in the metal layer 102. As shown in FIG. 6, the thickness T of the base material 101 of the pad portion 111 is thicker than the maximum thickness t of the base material 101 of each of the plurality of terminals 12 max is thicker.

[0016] As shown in FIGS. 3 and 7, the terminal portion 112 includes a portion extending along the first direction x and is connected to the base material 101 of the pad portion 111. Therefore, the pad portion 111 and the terminal portion 112 are electrically connected to each other. A part of the terminal portion 112 is covered with the encapsulating resin 50. The portion of the terminal portion 112 covered with the encapsulating resin 50 is bent when viewed along the second direction y. The surface of the portion of the terminal portion 112 exposed from the encapsulating resin 50 is plated with tin.

[0017] As shown in FIGS. 3, 6, and 7, the semiconductor element 30 is mounted on the first main surface 111A of the pad portion 111 of the die pad 11. In the semiconductor device A10, the semiconductor element 30 is an n-channel type and a vertical structure MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). The semiconductor element 30 includes a compound semiconductor substrate. The main material of the compound semiconductor substrate is silicon carbide (SiC). Alternatively, silicon (Si) may be used as the main material of the compound semiconductor substrate. In the semiconductor device A10, when viewed along the thickness direction z, the area of the semiconductor element 30 is 40% or less of the area of the first main surface 111A. The semiconductor element 30 is not limited to the MOSFET. The semiconductor element 30 may be other transistors such as an IGBT (Insulated Gate Bipolar Transistor). Further, the semiconductor element 30 may be an LSI or a diode. The semiconductor element 30 has a first electrode 31, a second electrode 32, and a third electrode 33.

[0018] As shown in FIGS. 8 and 9, the first electrode 31 is provided on the side facing the first main surface 111A of the pad portion 111 of the die pad 11 in the thickness direction z. A current corresponding to the power after being converted by the semiconductor element 30 flows through the first electrode 31. That is, the first electrode 31 corresponds to the source of the semiconductor element 30.

[0019] As shown in FIG. 9, the second electrode 32 is provided on the side opposite to the first electrode 31 in the thickness direction z. The second electrode 32 faces the first main surface 111A of the pad portion 111 of the die pad 11. A current corresponding to the power before being converted by the semiconductor element 30 flows through the second electrode 32. That is, the second electrode 32 corresponds to the drain of the semiconductor element 30.

[0020] As shown in FIG. 8, the third electrode 33 is provided on the same side as the first electrode 31 in the thickness direction z and is located away from the first electrode 31. A gate voltage for driving the semiconductor element 30 is applied to the third electrode 33. That is, the third electrode 33 corresponds to the gate of the semiconductor element 30. When viewed along the thickness direction z, the area of the third electrode 33 is smaller than the area of the first electrode 31.

[0021] As shown in FIG. 9, the first bonding layer 39 is interposed between the first main surface 111A of the pad portion 111 of the die pad 11 and the second electrode 32 of the semiconductor element 30. The first bonding layer 39 is in contact with the first metal layer 102A of the pad portion 111 and the second electrode 32. The first bonding layer 39 is located on the first metal layer 102A. The first bonding layer 39 contains a metal element. The metal element is, for example, tin. The first bonding layer 39 is, for example, solder. The second electrode 32 is conductively bonded to the pad portion 111 via the first bonding layer 39. Therefore, the terminal portion 112 of the die pad 11 corresponds to the drain terminal of the semiconductor device A10.

[0022] As shown in FIG. 3, the plurality of terminals 12 are electrically connected to the semiconductor element 30. The plurality of terminals 12 have a covered portion 121 and an exposed portion 122. The covered portion 121 is covered with the encapsulating resin 50. The covered portion 121 includes a base material 101 and a second metal layer 102B. The base material 101 of the covered portion 121 has a second main surface 121A. The second main surface 121A is included in the main surface 101A. The second metal layer 102B is laminated on the second main surface 121A. The second metal layer 102B is included in the metal layer 102. When viewed along the thickness direction z, the area of the second metal layer 102B is smaller than the area of the first metal layer 102A of the pad portion 111 of the die pad 11. The exposed portion 122 is connected to the base material 101 of the covered portion 121 and is exposed from the encapsulating resin 50. The exposed portion 122 extends from the covered portion 121 in the first direction x away from the pad portion 111 of the die pad 11. For example, a tin plating is applied to the surface of the exposed portion 122.

[0023] As shown in FIG. 3, in the semiconductor device A10, the plurality of terminals 12 include a first terminal 12A and a second terminal 12B. The first terminal 12A extends along the first direction x and is located adjacent to the terminal portion 112 of the die pad 11 in the second direction y. The first terminal 12A is electrically connected to the first electrode 31 of the semiconductor element 30. Therefore, the first terminal 12A corresponds to the source terminal of the semiconductor device A10.

[0024] As shown in FIG. 3, the second terminal 12B extends along the first direction x and is located on the side opposite to the first terminal 12A with the terminal portion 112 of the die pad 11 interposed therebetween in the second direction y. The second terminal 12B is electrically connected to the third electrode 33 of the semiconductor element 30. Therefore, the second terminal 12B corresponds to the gate terminal of the semiconductor device A10.

[0025] As shown in FIG. 5, in the semiconductor device A10, the heights h of the portions of the terminal portion 112 of the die pad 11 exposed from the encapsulating resin 50, the exposed portion 122 of the first terminal 12A, and the exposed portion 122 of the second terminal 12B are all equal. When viewed along the second direction y, a part of the terminal portion 112 overlaps with the exposed portion 122 of the first terminal 12A and the exposed portion 122 of the second terminal 12B.

[0026] As shown in FIGS. 3, 11, and 12, a plurality of grooves 20 are formed in the lead 10 (die pad 11 and the plurality of terminals 12). The plurality of grooves 20 are recessed from the main surface 101A (first main surface 111A and second main surface 121A) of the base material 101 and are located apart from each other. As shown in FIGS. 3, 6, and 7, the plurality of grooves 20 are located away from the periphery 101B of the main surface 101A. The plurality of grooves 20 are formed by performing laser processing on the main surface 101A. In FIG. 3, the portion of the lead 10 in which the plurality of grooves 20 are formed is shown by a plurality of linear regions.

[0027] As shown in FIG. 11, the plurality of grooves 20 include a plurality of first grooves 21 and a plurality of second grooves 22. The plurality of first grooves 21 and the plurality of second grooves 22 are arranged along the first direction x. The plurality of first grooves 21 and the plurality of second grooves 22 are linear and extend in a direction orthogonal to the thickness direction z. Thereby, the plurality of first grooves 21 and the plurality of second grooves 22 form a broken line when viewed along the thickness direction z. In FIG. 11, the plurality of second grooves 22 are shown in a plurality of point regions.

[0028] As shown in FIG. 11, in the semiconductor device A10, the plurality of first grooves 21 and the plurality of second grooves 22 extend in the first direction x. The plurality of second grooves 22 are located adjacent to the plurality of first grooves 21 in the second direction y. In the first direction x, at least a part of any one of the plurality of second grooves 22 is located between two adjacent first grooves 21 among the plurality of first grooves 21 in the first direction x. The length L2 of each of the plurality of second grooves 22 is longer than the length L1 of each of the plurality of first grooves 21.

[0029] As shown in FIG. 3, in the pad portion 111 of the die pad 11 among the leads 10, when viewed along the thickness direction z, the plurality of grooves 20 surround the first bonding layer 39 and the first metal layer 102A. Further, in the covering portion 121 of the plurality of terminals 12 among the leads 10, when viewed along the thickness direction z, the plurality of grooves 20 surround the second metal layer 102B.

[0030] As shown in FIG. 3, the plurality of conductive members 40 are conductively joined to the semiconductor element 30 and the plurality of terminals 12. Thereby, mutual conduction between the semiconductor element 30 and the plurality of terminals 12 is achieved. The plurality of conductive members 40 include a first member 41 and a second member 42.

[0031] As shown in FIGS. 3, 9, and 10, the first member 41 is conductively joined to the first electrode 31 of the semiconductor element 30 and the second metal layer 102B of the covering portion 121 of the first terminal 12A. As a result, the first terminal 12A is conductive to the first electrode 31. The composition of the first member 41 contains copper. In the semiconductor device A10, the first member 41 is a metal clip. The first member 41 is conductively joined to the first electrode 31 and the second metal layer 102B via the second joining layer 49. The second joining layer 49 contains a metal element. The metal element is, for example, tin. The second joining layer 49 is, for example, solder. As shown in FIG. 9, the thickness t2 of the second joining layer 49 is smaller than the thickness t1 of the first joining layer 39. In addition, the first member 41 may be a wire. In this case, since the first member 41 is formed by wire bonding, the second joining layer 49 becomes unnecessary.

[0032] As shown in FIGS. 3 and 8, the second member 42 is conductively joined to the third electrode 33 of the semiconductor element 30 and the second metal layer 102B of the covering portion 121 of the second terminal 12B. As a result, the second terminal 12B is conductive to the third electrode 33. The second member 42 is a wire. The second member 42 is formed by wire bonding. The composition of the second member 42 contains aluminum (Al).

[0033] The differences between the first member 41 and the second member 42 will be described below. The Young's modulus (elastic modulus) of the second member 42 is smaller than that of the first member 41. As described above, this is based on the fact that the composition of the first member 41 contains copper and the composition of the second member 42 contains aluminum. Therefore, the linear expansion coefficient of the second member 42 is larger than that of the first member 41. In addition, the thermal conductivity of the second member 42 is smaller than that of the first member 41. Further, as shown in FIG. 8, the width B of the first member 41 is larger than the width (diameter) D of the second member 42.

[0034] As shown in FIGS. 6 and 7, the encapsulating resin 50 covers the semiconductor element 30, the plurality of conductive members 40, and a part of each of the die pad 11 and the plurality of terminals 12. The encapsulating resin 50 is in contact with the main surface 101A of the base material 101 of the lead 10. The encapsulating resin 50 has electrical insulation properties. The encapsulating resin 50 is made of a material containing, for example, a black epoxy resin. The encapsulating resin 50 has a top surface 51, a bottom surface 52, a pair of first side surfaces 53, a pair of second side surfaces 54, a pair of openings 55, and mounting holes 56.

[0035] As shown in FIGS. 6 and 7, the top surface 51 faces the same side as the first main surface 111A of the pad portion 111 of the die pad 11 in the thickness direction z. As shown in FIGS. 5 to 7, the bottom surface 52 faces the side opposite to the top surface 51 in the thickness direction z. The back surface 111B of the pad portion 111 is exposed from the bottom surface 52.

[0036] As shown in FIGS. 2 and 4, the pair of first side surfaces 53 are located apart from each other in the first direction x. The pair of first side surfaces 53 are connected to the top surface 51 and the bottom surface 52. As shown in FIG. 5, a part of the terminal portion 112 of the die pad 11 and the exposed portions 122 of the first terminal 12A and the second terminal 12B are exposed from one of the pair of first side surfaces 53.

[0037] As shown in FIGS. 2, 4, and 5, a pair of second side surfaces 54 are positioned apart from each other in the second direction y. The pair of second side surfaces 54 are connected to the top surface 51 and the bottom surface 52. As shown in FIG. 2, a pair of openings 55 are positioned apart from each other in the second direction y. Each of the pair of openings 55 is recessed inward of the sealing resin 50 from the top surface 51 and one of the pair of second side surfaces 54. The first main surface 111A of the pad portion 111 of the die pad 11 is exposed from the pair of openings 55. As shown in FIGS. 2, 4, and 7, the mounting hole 56 penetrates the sealing resin 50 from the top surface 51 to the bottom surface 52 in the thickness direction z. When viewed along the thickness direction z, the mounting hole 56 is included in the through hole 111C of the pad portion 111 of the die pad 11. The inner peripheral surface of the pad portion 111 that defines the through hole 111C is covered with the sealing resin 50. Thereby, when viewed along the thickness direction z, the maximum dimension of the mounting hole 56 is smaller than the dimension of the through hole 111C.

[0038] <Modification Example of the First Embodiment> Next, with reference to FIG. 13, a semiconductor device A11, which is a modification of the semiconductor device A10, will be described. Here, the position in FIG. 13 is the same as the position in FIG. 11. Similar to FIG. 11, in FIG. 13 as well, it penetrates the sealing resin 50, and a plurality of second grooves 22 are shown in a plurality of point regions.

[0039] In the semiconductor device A11, the configuration of a plurality of second grooves 22 among the plurality of grooves 20 is different from that of the semiconductor device A10. As shown in FIG. 13, when viewed along the second direction y, both sides in the first direction x of any one of the plurality of second grooves 22 overlap two adjacent first grooves 21 among the plurality of first grooves 21 in the first direction x. This configuration can be obtained by setting the length L2 of each of the plurality of second grooves 22 to be longer than the length L2 in the case of the semiconductor device A10.

[0040] Next, the operation and effect of the semiconductor device A10 will be described.

[0041] The semiconductor device A10 includes a lead 10 having a main surface 101A, a semiconductor element 30 mounted on the main surface 101A, and a sealing resin 50 that contacts the main surface 101A and covers the semiconductor element 30. A plurality of grooves 20 are formed in the lead 10, which are recessed from the main surface 101A and are located apart from each other. The plurality of grooves 20 are located away from the peripheral edge 101B of the main surface 101A. Thereby, when the sealing resin 50 contacting the main surface 101A sinks into the plurality of grooves 20, an anchoring effect (anchor effect) appears in the sealing resin 50. For this reason, the bonding strength of the sealing resin 50 with respect to the main surface 101A increases. Therefore, according to the semiconductor device A10, it is possible to improve the adhesion between the lead 10 and the sealing resin 50.

[0042] The plurality of grooves 20 include a plurality of first grooves 21 arranged along the first direction x and a plurality of second grooves 22. The plurality of first grooves 21 and the plurality of second grooves 22 are linear and extend in a direction orthogonal to the thickness direction z. Thereby, since the plurality of first grooves 21 and the plurality of second grooves 22 are constituted by broken lines, the extension of the plurality of grooves 20 per unit area of the main surface 101A of the lead 10 can be shortened. Therefore, according to the semiconductor device A10, it is possible to shorten the laser processing time for forming the plurality of grooves 20 while improving the adhesion between the lead 10 and the sealing resin 50.

[0043] In the semiconductor device A10, the plurality of second grooves 22 are located adjacent to the plurality of first grooves 21 in the second direction y. The plurality of first grooves 21 and the plurality of second grooves 22 extend in the first direction x. In the first direction x, at least a part of any one of the plurality of second grooves 22 is located between two adjacent first grooves 21 among the plurality of first grooves 21. Thereby, the plurality of grooves 20 can resist the shear stress transmitted to the interface between the main surface 101A of the lead 10 and the sealing resin 50 from multiple directions. Therefore, it is possible to further increase the bonding strength of the sealing resin 50 with respect to the main surface 101A while shortening the laser processing time for forming the plurality of grooves 20.

[0044] In the semiconductor device A11, when viewed along the second direction y, both sides of any one of the plurality of second grooves 22 in the first direction x overlap with two adjacent first grooves 21 among the plurality of first grooves 21. Thereby, the plurality of grooves 20 can more strongly resist the shear stress in the second direction y transmitted to the interface between the main surface 101A of the lead 10 and the encapsulating resin 50.

[0045] The semiconductor device A10 further includes a conductive member 40 (first member 41) electrically connected to the first electrode 31 of the semiconductor element 30 and a terminal 12 (first terminal 12A) which is an element of the lead 10. The terminal 12 includes a base material 101 having a second main surface 121A and a metal layer 102 (second metal layer 102B) laminated on the second main surface 121A. The second main surface 121A is included in the main surface 101A which is the formation target of the plurality of grooves 20. The conductive member 40 is electrically connected to the metal layer 102. When the adhesion between the base material 101 of the terminal 12 and the encapsulating resin 50 is improved with the formation of the plurality of grooves 20, the shear stress transmitted to the bonding interface between the metal layer 102 and the conductive member 40 can be reduced. Therefore, the occurrence of pitting corrosion of the conductive member 40 can be prevented. Further, when the conductive member 40 is electrically connected to the metal layer 102 in the manufacture of the semiconductor device A10, the metal layer 102 has an effect of reducing the impact caused by the electrical connection transmitted to the base material 101.

[0046] The semiconductor device A10 further includes a bonding layer (first bonding layer 39) interposed between the first main surface 111A of the die pad 11 (pad portion 111) and the semiconductor element 30. The die pad 11 is an element of the lead 10. The first main surface 111A is included in the main surface 101A which is the formation target of the plurality of grooves 20. When the adhesion between the die pad 11 and the encapsulating resin 50 is improved with the formation of the plurality of grooves 20, the shear stress transmitted to the interface between the first main surface 111A and the encapsulating resin 50 is less likely to reach the bonding layer. Thereby, the occurrence of cracks in the bonding layer can be prevented.

[0047] In the above case, when viewed along the thickness direction z, it is preferable that the plurality of grooves 20 are configured to surround the bonding layer. Thereby, the shear stress reaching the bonding layer from the interface between the first main surface 111A of the die pad 11 and the encapsulating resin 50 can be effectively reduced. Further, when the semiconductor element 30 is bonded to the die pad 11 in the manufacture of the semiconductor device A10, it is possible to prevent the molten bonding layer (when the bonding layer is solder) from excessively wetting and spreading over the first main surface 111A by the plurality of grooves 20. Thereby, it is possible to prevent a short circuit between the die pad 11 and the terminal 12 due to the bonding layer adhering to the terminal 12. Further, it is possible to suppress the displacement of the semiconductor element 30 with respect to the first main surface 111A caused by the molten bonding layer.

[0048] When viewed along the thickness direction z, the plurality of grooves 20 surround the first metal layer 102A laminated on the first main surface 111A of the die pad 11. The bonding layer is located above the first metal layer 102A. Thereby, when the semiconductor element 30 is bonded to the die pad 11 in the manufacture of the semiconductor device A10, while improving the wettability of the bonding layer (when the bonding layer is solder) with respect to the die pad 11, it is possible to prevent the bonding layer from wetting and spreading over the first main surface 111A.

[0049] The thickness t1 of the first bonding layer 39 is greater than the thickness t2 of the second bonding layer 49. Thereby, when the semiconductor device A10 is in use, the heat generated from the semiconductor element 30 is more likely to be conducted to the die pad 11 having a larger volume than each of the plurality of conductive members 40. Thereby, the heat dissipation performance of the semiconductor device A10 can be improved.

[0050] The composition of the base material 101 of the lead 10 contains copper. Further, the thickness T of the base material 101 of the pad portion 111 of the die pad 11 is max greater than the maximum thickness t of the terminal 12. Thereby, while improving the thermal conductivity of the pad portion 111, the efficiency of heat conduction in the direction orthogonal to the thickness direction z can be increased. This contributes to the improvement of the heat dissipation performance of the die pad 11.

[0051] The base material 101 of the pad portion 111 has a back surface 111B facing the side opposite to the first main surface 111A in the thickness direction z. The back surface 111B is exposed from the bottom surface 52 of the sealing resin 50. Thereby, while protecting the semiconductor element 30 and the conductive member 40 from external factors by the sealing resin 50, it is possible to avoid a decrease in the heat dissipation performance of the semiconductor device A10.

[0052] 〔Second Embodiment〕 Based on FIG. 14, the semiconductor device A20 according to the second embodiment of the present disclosure will be described. In this figure, the same or similar elements of the semiconductor device A10 described above are denoted by the same reference numerals, and redundant descriptions are omitted. Here, the position in FIG. 13 is the same as the position in FIG. 11 showing the semiconductor device A10. Similar to FIG. 11, in FIG. 13 as well, it penetrates the sealing resin 50, and a plurality of second grooves 22 are shown in a plurality of point regions.

[0053] The semiconductor device A20 differs from the corresponding configuration of the semiconductor device A10 described above in the configuration of a plurality of grooves 20.

[0054] As shown in FIG. 14, a plurality of first grooves 21 extend in the first direction x. A plurality of second grooves 22 extend in the second direction y. When viewed along the second direction y, any one of the plurality of second grooves 22 overlaps any one of the plurality of first grooves 21. The length L2 of each of the plurality of second grooves 22 is shorter than the length L1 of each of the plurality of first grooves 21.

[0055] <Modification Example of the Second Embodiment> Next, based on FIG. 15, a semiconductor device A21, which is a modification example of the semiconductor device A20, will be described. Here, the position in FIG. 15 is the same as the position in FIG. 14. Similar to FIG. 14, in FIG. 15 as well, it penetrates the sealing resin 50, and a plurality of second grooves 22 are shown in a plurality of point regions.

[0056] In the semiconductor device A21, the configuration of a plurality of second grooves 22 among the plurality of grooves 20 differs from the corresponding configuration of the semiconductor device A20. As shown in FIG. 15, in the first direction x, any one of the plurality of second grooves 22 is located between two adjacent first grooves 21 among the plurality of first grooves 21 in the first direction x.

[0057] Next, the operation and effect of the semiconductor device A20 will be described.

[0058] The semiconductor device A20 includes a lead 10 having a main surface 101A, a semiconductor element 30 mounted on the main surface 101A, and a sealing resin 50 that is in contact with the main surface 101A and covers the semiconductor element 30. A plurality of grooves 20 that are recessed from the main surface 101A and are spaced apart from each other are formed in the lead 10. The plurality of grooves 20 are located away from the peripheral edge 101B of the main surface 101A. Therefore, also in the semiconductor device A20, it is possible to improve the adhesion between the lead 10 and the sealing resin 50.

[0059] Also in the semiconductor device A20, the plurality of grooves 20 include a plurality of first grooves 21 arranged along the first direction x and a plurality of second grooves 22. The plurality of first grooves 21 and the plurality of second grooves 22 are linear and extend in a direction orthogonal to the thickness direction z. Therefore, also in the semiconductor device A20, it is possible to shorten the laser processing time for forming the plurality of grooves 20 while improving the adhesion between the lead 10 and the sealing resin 50.

[0060] In the semiconductor device A20, the plurality of second grooves 22 are located next to the plurality of first grooves 21 in the second direction y. The plurality of first grooves 21 extend in the first direction x. The plurality of second grooves 22 extend in the second direction y. Thereby, the plurality of grooves 20 can resist the shear stress transmitted to the interface between the main surface 101A of the lead 10 and the sealing resin 50 from multiple directions. Further, the extension of the plurality of grooves 20 per unit area of the main surface 101A can be shortened compared to the case of the semiconductor device A10. Therefore, according to the semiconductor device A20, it is possible to further increase the bonding strength of the sealing resin 50 to the main surface 101A while further shortening the laser processing time for forming the plurality of grooves 20.

[0061] In the semiconductor device A21, in the first direction x, any one of the plurality of second grooves 22 is located between two adjacent first grooves 21 among the plurality of first grooves 21. Thereby, the interval between two adjacent first grooves 21 among the plurality of first grooves 21 in the first direction x can be set longer. Therefore, the extension of the plurality of grooves 20 per unit area of the main surface 101A of the lead 10 can be further shortened compared to the case of the semiconductor device A20.

[0062] In the semiconductor device A20, the length L2 of each of the plurality of second grooves 22 is shorter than the length L1 of each of the plurality of first grooves 21. With this configuration, it is possible to prevent the interval between two adjacent first grooves 21 among the plurality of first grooves 21 in the second direction y from expanding excessively. Thereby, it is possible to surely increase the bonding strength to the main surface 101A of the lead 10.

[0063] Furthermore, since the semiconductor device A20 has the same configuration as the semiconductor device A10, the semiconductor device A20 also exhibits the operational effects according to this configuration.

[0064] 〔Third Embodiment〕 Based on FIG. 16, a semiconductor device A30 according to the third embodiment of the present disclosure will be described. In this figure, the same or similar elements as those of the semiconductor device A10 described above are denoted by the same reference numerals, and redundant descriptions are omitted. Here, the position in FIG. 16 is the same as the position in FIG. 11 showing the semiconductor device A10. Similar to FIG. 11, in FIG. 16 as well, it penetrates the sealing resin 50, and a plurality of second grooves 22 are shown in a plurality of point regions.

[0065] The semiconductor device A30 has a configuration of a plurality of grooves 20 different from that of the semiconductor device A10 described above.

[0066] As shown in FIG. 16, the plurality of first grooves 21 extend in the first direction x. The plurality of second grooves 22 extend in the second direction y. Any one of the plurality of second grooves 22 is located between two adjacent first grooves 21 among the plurality of first grooves 21.

[0067] <Modification Example of the Third Embodiment> Next, based on FIG. 17, a semiconductor device A31, which is a modification example of the semiconductor device A30, will be described. Here, the position in FIG. 17 is the same as the position in FIG. 16. Similar to FIG. 16, in FIG. 17 as well, it penetrates the encapsulating resin 50, and a plurality of second grooves 22 are shown in regions at multiple points.

[0068] The semiconductor device A31 differs from the corresponding configuration of the semiconductor device A30 in the configuration of the plurality of grooves 20. As shown in FIG. 17, the plurality of grooves 20 include a plurality of third grooves 23. The plurality of third grooves 23 are arranged along the first direction x and are located adjacent to the plurality of first grooves 21 in the second direction y. The plurality of third grooves 23 extend in the first direction x. Any one of the plurality of second grooves 22 is located between two adjacent third grooves 23 in the first direction x among the plurality of third grooves 23. That is, both sides in the second direction y of any one of the plurality of second grooves 22 are sandwiched between two adjacent first grooves 21 in the first direction x and two adjacent third grooves 23 in the first direction x.

[0069] Next, the operation and effects of the semiconductor device A30 will be described.

[0070] The semiconductor device A30 includes a lead 10 having a main surface 101A, a semiconductor element 30 mounted on the main surface 101A, and an encapsulating resin 50 that is in contact with the main surface 101A and covers the semiconductor element 30. A plurality of grooves 20 are formed in the lead 10, which are recessed from the main surface 101A and are spaced apart from each other. The plurality of grooves 20 are located away from the peripheral edge 101B of the main surface 101A. Therefore, also with the semiconductor device A30, it is possible to improve the adhesion between the lead 10 and the encapsulating resin 50.

[0071] Also in the semiconductor device A30, the plurality of grooves 20 include a plurality of first grooves 21 arranged along the first direction x and a plurality of second grooves 22. The plurality of first grooves 21 and the plurality of second grooves 22 are linear and extend in a direction orthogonal to the thickness direction z. Therefore, also with the semiconductor device A30, it is possible to shorten the laser processing time for forming the plurality of grooves 20 while improving the adhesion between the lead 10 and the sealing resin 50.

[0072] In the semiconductor device A30, the plurality of first grooves 21 extend in the first direction x. The plurality of second grooves 22 extend in the second direction y. Any one of the plurality of second grooves 22 is located between two adjacent first grooves 21 among the plurality of first grooves 21. Thereby, the plurality of grooves 20 can resist the shear stress transmitted to the interface between the main surface 101A of the lead 10 and the sealing resin 50 from multiple directions. Furthermore, the extension of the plurality of grooves 20 per unit area of the main surface 101A can be shortened compared to the case of the semiconductor device A10. Therefore, according to the semiconductor device A30, it is possible to further shorten the laser processing time for forming the plurality of grooves 20 and further increase the bonding strength of the sealing resin 50 to the main surface 101A.

[0073] In the semiconductor device A31, the plurality of grooves 20 include a plurality of third grooves 23 arranged along the first direction x and located adjacent to the plurality of first grooves 21 in the second direction y. The plurality of third grooves 23 extend in the first direction x. Any one of the plurality of second grooves 22 is located between two adjacent third grooves 23 among the plurality of third grooves 23. Thereby, the plurality of grooves 20 can more strongly resist the shear stress in the first direction x transmitted to the interface between the main surface 101A of the lead 10 and the sealing resin 50.

[0074] Furthermore, since the semiconductor device A30 has the same configuration as the semiconductor device A10, the semiconductor device A30 also exhibits the effects of such a configuration.

[0075] The present disclosure is not limited to the above-described embodiments. The specific configuration of each part of the present disclosure can be freely designed in various ways.

[0076] The technical configurations of the semiconductor device provided by the present disclosure and the method for manufacturing the semiconductor device are appended below. [Appendix 1] A lead having a main surface facing the thickness direction, A semiconductor element mounted on the main surface, A sealing resin that contacts the main surface and covers the semiconductor element, and a plurality of grooves that are recessed from the main surface and are spaced apart from each other are formed in the lead, The plurality of grooves are located away from the periphery of the main surface, a semiconductor device. [Appendix 2] The plurality of grooves include a plurality of first grooves and a plurality of second grooves arranged along a first direction that is a direction orthogonal to the thickness direction, The plurality of first grooves and the plurality of second grooves are linear and extend in a direction orthogonal to the thickness direction, the semiconductor device according to Appendix 1. [Appendix 3] The plurality of second grooves are located adjacent to the plurality of first grooves in a second direction that is orthogonal to the thickness direction and the first direction, the semiconductor device according to Appendix 2. [Appendix 4] The plurality of first grooves and the plurality of second grooves extend in the first direction, In the first direction, at least a part of any one of the plurality of second grooves is located between two adjacent first grooves among the plurality of first grooves, the semiconductor device according to Appendix 3. [Appendix 5] Viewed along the second direction, both sides in the first direction of any one of the plurality of second grooves overlap two adjacent first grooves among the plurality of first grooves, the semiconductor device according to Appendix 4. [Appendix 6] The length of each of the plurality of second grooves is longer than the length of each of the plurality of first grooves, the semiconductor device according to Appendix 4 or 5. [Appendix 7] The plurality of first grooves extend in the first direction, The semiconductor device according to appended claim 3, wherein the plurality of second grooves extend in the second direction. [Appended claim 8] The semiconductor device according to appended claim 7, wherein in the first direction, any one of the plurality of second grooves is located between two adjacent first grooves among the plurality of first grooves. [Appended claim 9] The semiconductor device according to appended claim 7 or 8, wherein the length of each of the plurality of second grooves is shorter than the length of each of the plurality of first grooves. [Appended claim 10] The plurality of first grooves extend in the first direction, The plurality of second grooves extend in a second direction orthogonal to the thickness direction and the first direction, The semiconductor device according to appended claim 2, wherein any one of the plurality of second grooves is located between two adjacent first grooves among the plurality of first grooves. [Appended claim 11] The plurality of grooves are arranged along the first direction and include a plurality of third grooves located adjacent to the plurality of first grooves in the second direction, The plurality of third grooves extend in the first direction, The semiconductor device according to appended claim 10, wherein any one of the plurality of second grooves is located between two adjacent third grooves among the plurality of third grooves. [Appended claim 12] The lead includes a die pad and terminals that are spaced apart from each other, The main surface includes a first main surface included in the die pad and a second main surface included in the terminal, The semiconductor element is mounted on the first main surface, The semiconductor device according to any one of appended claims 1 to 11, wherein the terminal is electrically connected to the semiconductor element. [Appended claim 13] The semiconductor element has a first electrode provided on the side facing the first main surface in the thickness direction, The semiconductor device according to appended claim 12, further comprising a conductive member conductively joined to the first electrode and the terminal. [Appended claim 14] The terminal includes a base material having the second main surface and a metal layer laminated on the second main surface. The semiconductor device according to appended note 13, wherein the conductive member is conductively joined to the metal layer. [Appended note 15] The semiconductor device according to appended note 13 or 14, further comprising a bonding layer interposed between the first main surface and the semiconductor element. The bonding layer contains a metal element. [Appended note 16] The semiconductor element has a second electrode provided on the side opposite to the first electrode in the thickness direction. The semiconductor device according to appended note 15, wherein the second electrode is conductively joined to the die pad through the bonding layer. [Appended note 17] The semiconductor device according to appended note 15 or 16, wherein, when viewed along the thickness direction, the plurality of grooves surround the bonding layer.

Explanation of reference numerals

[0077] A10, A20, A30: Semiconductor device 10: Lead 101: Base material 101A: Main surface 101B: Periphery 102: Metal layer 102A: First metal layer 102B: Second metal layer 11: Die pad 111: Pad portion 111A: First main surface 111B: Back surface 111C: Through hole 112: Terminal portion 12: Terminal 12A: First terminal 12B: Second terminal 121: Coating portion 121A: Second main surface 122: Exposed portion 20: Groove 21: First groove 22: Second groove 23: Third groove 30: Semiconductor element 31: First electrode 32: Second electrode 33: Third electrode 39: First bonding layer 40: Conductive member 41: First member 42: Second member 49: Second bonding layer 50: Encapsulating resin 51: Top surface 52: Bottom surface 53: First side surface 54: Second side surface 55: Opening 56: Mounting hole L1, L2: Length z: Thickness direction x: First direction y: Second direction

Claims

1. A lead having a main surface facing one side in the thickness direction, a semiconductor element mounted on the main surface, and a sealing resin that contacts the main surface and covers the semiconductor element, wherein a plurality of grooves are formed in the lead, being recessed from the main surface and spaced apart from each other, the plurality of grooves are located away from the periphery of the main surface, the plurality of grooves include a plurality of first grooves and a plurality of second grooves arranged along a first direction orthogonal to the thickness direction, each of the plurality of first grooves and each of the plurality of second grooves are linear and extend in a direction orthogonal to the thickness direction, the plurality of second grooves are located adjacent to the plurality of first grooves in a second direction orthogonal to each of the thickness direction and the first direction, the plurality of first grooves and the plurality of second grooves are arranged in a staggered pattern along the first direction, a semiconductor device.

2. Each of the plurality of first grooves and each of the plurality of second grooves extend in the first direction, the semiconductor device according to Claim 1.

3. When viewed in the second direction, both sides in the first direction of any one of the plurality of second grooves individually overlap two adjacent first grooves among the plurality of first grooves, the semiconductor device according to Claim 2.

4. The length of each of the plurality of second grooves is longer than the length of each of the plurality of first grooves, the semiconductor device according to Claim 2 or 3.

5. Each of the plurality of first grooves extends in the first direction, the plurality of second grooves extend in the second direction, the semiconductor device according to Claim 1.

6. The length of each of the plurality of second grooves is shorter than the length of each of the plurality of first grooves, the semiconductor device according to Claim 5.

7. The lead includes a die pad and terminals spaced apart from each other, the main surface includes a first main surface included in the die pad and a second main surface included in the terminals, the semiconductor element is mounted on the first main surface, the terminals are electrically connected to the semiconductor element, the semiconductor device according to any one of Claims 1 to 6.

8. Further comprising a conductive member, the semiconductor element has a first electrode provided on a side facing the first main surface in the thickness direction, the conductive member is conductively joined to each of the first electrode and the terminals, the semiconductor device according to Claim 7. Claim 9: The terminal includes a base material having the second main surface and a metal layer laminated on the second main surface. The semiconductor device according to claim 8, wherein the conductive member is conductively joined to the metal layer. Claim 10: The semiconductor device further includes a bonding layer interposed between the first main surface and the semiconductor element. The semiconductor device according to claim 8 or 9, wherein the bonding layer contains a metal element. Claim 11: The semiconductor element has a second electrode provided on the side opposite to the first electrode in the thickness direction. The semiconductor device according to claim 10, wherein the second electrode is conductively joined to the die pad through the bonding layer. Claim 12: The semiconductor device according to claim 10 or 11, wherein the plurality of grooves surround the bonding layer when viewed in the thickness direction.

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