Method for manufacturing third laminate

Abstract

The present invention relates to a method of manufacturing a three-layer laminate including a work (14), one surface of which being a circuit surface (14a) and the other surface being a back side (14b), the method including: a first laminating step for attaching a back side protective-coating formation film (13) on the back side (14b) of the work (14); and a second laminating step for attaching a support sheet (10) on the back side protective-coating formation film (13), these steps being performed in this order, wherein during the processing from the first laminating step to the second laminating step, a two-layer laminate including the work (14) and the back side protective-coating formation film (13) laminated thereon is transferred one by one and the first and second laminating steps are performed by a device for attaching a back side protective-coating formation film and a device for attaching a support sheet coupled with each other or performed in the same device.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a third laminate. Specifically, the present invention relates to a method for manufacturing a third laminate in which a workpiece such as a semiconductor wafer, a film for forming a back surface protective film, and a support sheet are laminated in this order. This application claims priority based on Japanese Patent Application No. 2019-086303 filed in Japan on April 26, 2019, and incorporates the content thereof herein.

Background Art

[0002] In recent years, manufacturing of semiconductor devices using a mounting method called the so-called face-down method has been carried out. In the face-down method, a semiconductor chip having electrodes such as bumps on the circuit surface is used, and the electrodes are joined to a substrate. For this reason, the back surface on the opposite side of the circuit surface of the semiconductor chip may be exposed.

[0003] On the exposed back surface of the semiconductor chip, a resin film containing an organic material is formed as a back surface protective film, and it may be incorporated into a semiconductor device as a semiconductor chip with a back surface protective film. The back surface protective film is used to prevent cracks from occurring in the semiconductor chip after the dicing process and packaging (for example, Patent Documents 1 and 2).

[0004] Such a semiconductor chip with a back surface protective film is manufactured, for example, through the process shown in FIG. 9. That is, a film 13 for forming a back surface protective film is laminated on the back surface 8b of a semiconductor wafer 8 having a circuit surface (FIG. 9(A)), the film 13 for forming a back surface protective film is thermally cured or cured by energy rays to form a back surface protective film 13' (FIG. 9(B)), the back surface protective film 13' is laser marked (FIG. 9(C)), a support sheet 10 is laminated on the back surface protective film 13' (FIG. 9(D)), the semiconductor wafer 8 and the back surface protective film 13' are diced to form a semiconductor chip 7 with a back surface protective film (FIG. 9(E) and FIG. 9(F)), and the semiconductor chip 7 with a back surface protective film is picked up from the support sheet 10 (FIG. 9(G)). The order of the curing process and the laser marking process is arbitrary. A film 13 for forming a back surface protective film may be laminated on the back surface 8b of a semiconductor wafer 8 having a circuit surface (FIG. 9(A)), the film 13 for forming a back surface protective film may be laser marked, and then the film 13 for forming a back surface protective film may be thermally cured or cured by energy rays to form a back surface protective film 13', and then the processes of FIGS. 9(D) to 9(G) may be performed. In FIG. 9(A), the first lamination process of laminating the film 13 for forming a back surface protective film on the back surface 8b of the semiconductor wafer 8 and, in FIG. 9(D), the second lamination process of laminating the support sheet 10 on the back surface protective film 13' have conventionally been performed using separate apparatuses.

[0005] In addition, a composite sheet for forming a protective film, in which the film 13 for forming a back surface protective film and the support sheet 10 are integrated, is used in the manufacture of a semiconductor chip with a back surface protective film (for example, Patent Document 2).

[0006] A method for manufacturing a semiconductor chip with a back surface protective film using a composite sheet for forming a protective film undergoes, for example, the steps shown in FIG. 10. That is, a back surface protective film forming film 13 of a composite sheet 1 for forming a protective film, which is formed by laminating a back surface protective film forming film 13 and a support sheet 10 on the back surface 8b of a semiconductor wafer 8 having a circuit surface, is attached (FIG. 10(A')), a tape 17 for protecting the circuit surface is peeled off (FIG. 10(B')), the back surface protective film forming film 13 is thermally cured or cured by energy rays to form a back surface protective film 13' (FIG. 10(C')), laser marking is performed on the back surface protective film 13' from the side of the support sheet 10 (FIG. 10(D')), the semiconductor wafer 8 and the back surface protective film 13' are diced to form a semiconductor chip 7 with a back surface protective film (FIG. 10(E') and FIG. 10(F')), and the semiconductor chip 7 with a back surface protective film is picked up from the support sheet 10 (FIG. 10(G')). Also in this case, the order of the curing step and the laser marking step is arbitrary.

Prior Art Documents

Patent Documents

[0007]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0008] As described above, in FIG. 9(A), a first lamination step of laminating a back surface protective film forming film 13 on the back surface 8b of the semiconductor wafer 8 and, in FIG. 9(D), a second lamination step of laminating a support sheet 10 on the back surface protective film 13' have conventionally been performed by separate apparatuses. The laminate obtained in the first lamination step is accommodated in a single cassette and transported manually to the apparatus for performing the second step, and this manual transportation reduces the production efficiency of semiconductor chips with back surface protective films. Furthermore, there is a risk that the laminate obtained in the first lamination step may be contaminated, damaged, or the like while being accommodated in a cassette and transported.

[0009] Also, in the conventional method for manufacturing a semiconductor chip with a protective film shown in FIG. 10, since the composite sheet 1 for forming a protective film in which the film 13 for forming a back surface protective film and the support sheet 10 are integrated is used, the step of attaching the film 13 for forming a back surface protective film to the work to be protected by the film 13 for forming a back surface protective film (that is, the semiconductor wafer 8) and the step of attaching the support sheet 10 can be combined into one step. However, when using the composite sheet 1 for forming a protective film, the characteristics of the film 13 for forming a back surface protective film and the characteristics of the support sheet 10 must be combined, and in order to obtain a method for manufacturing a semiconductor chip with a protective film that meets the purpose, various types of composite sheets 1 for forming a protective film must be prepared.

[0010] Also, usually, the composite sheet 1 for forming a protective film can be manufactured by laminating the film 13 for forming a back surface protective film, which has been punched into a predetermined size, on the support sheet 10, punching this laminate into the size of a dicing jig, and removing unnecessary portions. Different from the case of sequentially laminating the film 13 for forming a back surface protective film and the support sheet 10 on the hard semiconductor wafer 8 as in the method of FIG. 9, in the manufacture of the composite sheet 1 for forming a protective film, since it is a bonding of the soft film 13 for forming a back surface protective film and the support sheet 10 respectively, the difficulty is high and the yield deteriorates, resulting in a problem that the manufacturing cost increases.

[0011] The present invention has been made in view of the above circumstances, and an object thereof is to provide a method for manufacturing a third laminate that can efficiently and at low cost manufacture a third laminate in which a work such as a semiconductor wafer, a film for forming a back surface protective film, and a support sheet are laminated in this order.

Means for Solving the Problems

[0012] The present invention provides a method for manufacturing the following third laminate.

[0013] [1] A method for manufacturing a third laminate in which a work, a film for forming a back surface protective film, and a support sheet are laminated in this order, comprising: One surface of the work is a circuit surface and the other surface is a back surface, A first lamination step of attaching the film for forming a back surface protective film to the back surface side of the work, A second lamination step of attaching the support sheet to the film for forming a back surface protective film, in this order, During the period from the first lamination step to the second lamination step, the second laminates in which the film for forming a back surface protective film is laminated on the work are conveyed one by one, A method for manufacturing a third laminate, wherein the period from the first lamination step to the second lamination step is performed by connecting an apparatus for attaching a film for forming a back surface protective film and an apparatus for attaching a support sheet, or is performed within the same apparatus. [2] A method for manufacturing a third laminate in which a work, a film for forming a back surface protective film, and a support sheet are laminated in this order, comprising: One surface of the work is a circuit surface and the other surface is a back surface, A first lamination step of attaching the film for forming a back surface protective film to the back surface side of the work, A second lamination step of attaching the support sheet to the film for forming a back surface protective film, in this order, The conveyance distance of the work between the attachment start point of the first lamination step and the attachment completion point of the second lamination step is 7000 mm or less, A method for manufacturing a third laminate, wherein the period from the first lamination step to the second lamination step is performed by connecting an apparatus for attaching a film for forming a back surface protective film and an apparatus for attaching a support sheet, or is performed within the same apparatus. [3] A method for manufacturing a third laminate in which a work, a film for forming a back surface protective film, and a support sheet are laminated in this order, comprising: One surface of the work is a circuit surface and the other surface is a back surface, A first lamination step of attaching the film for forming a back surface protective film to the back surface side of the work, The method for manufacturing a third laminate includes, in this order, a second laminating step of attaching the support sheet to the film for forming the back surface protective film. The transfer time of the workpiece from the start of attachment in the first laminating step to the completion of attachment in the second laminating step is 400 s or less. A method for manufacturing a third laminate, wherein the period from the first laminating step to the second laminating step is performed by connecting an apparatus for attaching a film for forming a back surface protective film and an apparatus for attaching a support sheet, or is performed within the same apparatus. [4] The method for manufacturing a third laminate according to [3], wherein the transfer time of the workpiece from the start of attachment in the first laminating step to the completion of attachment in the second laminating step is 150 s or less. [Effects of the Invention]

[0014] According to the present invention, there is provided a method for manufacturing a third laminate capable of efficiently and at low cost manufacturing a third laminate in which a workpiece such as a semiconductor wafer, a film for forming a back surface protective film, and a support sheet are laminated in this order. [Brief Description of the Drawings]

[0015]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Embodiments for Carrying Out the Invention

[0016] Hereinafter, a method for manufacturing a third laminate, which is an embodiment to which the present invention is applied, will be described in detail. Note that the drawings used in the following description may show, for the sake of clarity of the features, the characteristic parts enlarged for convenience, and the dimensional ratios of each component are not necessarily the same as the actual ones.

[0017] <<Method for Manufacturing a Third Laminate>> FIG. 1 is a schematic cross-sectional view schematically showing an example of an embodiment of a method for manufacturing a third laminate. The method for manufacturing a third laminate of the present embodiment is a method for manufacturing a third laminate 19 in which a workpiece 14, a film 13 for forming a back protective film, and a support sheet 10 are laminated in this order. One surface of the workpiece 14 is a circuit surface 14a, and the other surface is a back surface 14b (FIG. 1(a)). A first lamination step of attaching the film 13 for forming a back protective film to the back surface 14b side of the workpiece 14 (FIG. 1(b)), and a second lamination step of attaching the support sheet 10 to the film 13 for forming a back protective film (FIG. 1(d)) are included in this order (FIGS. 1(a) to 1(e)).

[0018] In the present embodiment, the period from the first lamination step to the second lamination step (FIGS. 1(b) to (d)) is performed by connecting an apparatus for attaching the film for forming a back protective film and an apparatus for attaching a support sheet, or is performed within the same apparatus. Therefore, in the present embodiment, between the first lamination step and the second lamination step, the second laminate in which the film 13 for forming the back surface protective film is laminated on the workpiece 14 can be conveyed one by one to the second lamination step shown in FIG. 1(d) without being housed in a cassette. By performing this within the same apparatus, the apparatus space can be further reduced. By connecting the apparatus for attaching the film for forming the back surface protective film and the apparatus for attaching the support sheet and performing the operation, it is possible to cope with the situation by modifying the conventional apparatus without designing from scratch, and the initial cost can be reduced. And since the second laminate is not housed in a cassette and conveyed outside the apparatus, the production efficiency can be improved, and contamination and breakage of the second laminate can be suppressed. Connecting the apparatus for attaching the film for forming the back surface protective film and the apparatus for attaching the support sheet means the step of connecting the apparatus for attaching the film for forming the back surface protective film and the apparatus for attaching the support sheet, and performing the step of performing the second lamination step from the first lamination step, or performing the second lamination step from the first lamination step by an apparatus in which the apparatus for attaching the film for forming the back surface protective film and the apparatus for attaching the support sheet are connected.

[0019] The film 13 for forming the back surface protective film used in the first lamination step may be processed in advance to the shape of the workpiece, or may be processed within the same apparatus immediately before performing the first lamination step. When the size of the workpiece is constant in the manufacturing line used, the former method of pre-processing is more efficient. When the size of the workpiece may be changed, the latter method can avoid waste of the film for forming the back surface protective film, which is cost-effective.

[0020] In another embodiment, the conveyance distance of the workpiece 14 from the pasting start point of the first lamination step to the pasting completion point of the second lamination step can be designed to be 7000 mm or less, and the apparatus space can be reduced. The conveyance distance of the workpiece 14 from the pasting start point of the first lamination step to the pasting completion point of the second lamination step can also be 6500 mm or less, 6000 mm or less, 4500 mm or less, or 3000 mm or less. Also, the conveyance distance of the workpiece 14 from the pasting start point of the first lamination step to the pasting completion point of the second lamination step can be 200 to 7000 mm or less, 200 to 6000 mm, 200 to 4500 mm, or 200 to 3000 mm. In this specification, the conveyance distance of the workpiece 14 from the pasting start point of the first lamination step to the pasting completion point of the second lamination step means the actual moving distance of the workpiece 14 from the pasting point of the first lamination step to the pasting completion point of the second lamination step.

[0021] In yet another embodiment, the conveyance time of the workpiece 14 from the start of pasting in the first lamination step to the completion of pasting in the second lamination step can be 400 s or less, 150 s or less, and the process time can be shortened. The conveyance time of the workpiece 14 from the start of pasting in the first lamination step to the completion of pasting in the second lamination step can also be 130 s or less, 110 s or less, 90 s or less, or 70 s or less. The conveyance time of the workpiece 14 from the start of pasting in the first lamination step to the completion of pasting in the second lamination step can also be 15 to 400 s, 15 to 150 s, 15 to 130 s, 15 to 110 s, 15 to 90 s, or 15 to 70 s.

[0022] The conveyance time of the workpiece 14 from the start of pasting in the first lamination process to the completion of pasting in the second lamination process is roughly divided into three parts: the time taken for the first lamination process, the conveyance time from the location where the first lamination process is performed to the location where the second lamination process is performed, and the time taken for the second lamination process.

[0023] The time taken for the first lamination process can be 40 s or less, and can also be 15 s or less, enabling the process time to be shortened. The time taken for the first lamination process can also be 10 s or less, and can also be 8 s or less. Also, the time taken for the first lamination process can be 3 - 40 s, can also be 3 - 15 s, can also be 3 - 10 s, and can also be 3 - 8 s.

[0024] The conveyance time from the location where the first lamination process is performed to the location where the second lamination process is performed can be 200 s or less, and can also be 75 s or less, enabling the process time to be shortened. The conveyance time from the location where the first lamination process is performed to the location where the second lamination process is performed can also be 60 s or less, and can also be 37 s or less. Also, the conveyance time from the location where the first lamination process is performed to the location where the second lamination process is performed can be 3 - 200 s, can also be 3 - 75 s, can also be 3 - 60 s, and can also be 3 - 37 s.

[0025] The time taken for the second lamination process can be 160 s or less, and can also be 60 s or less, enabling the process time to be shortened. The time taken for the second lamination process can also be 40 s or less, and can also be 25 s or less. Also, the time taken for the second lamination process can be 3 - 160 s, can also be 3 - 60 s, can also be 3 - 40 s, and can also be 3 - 25 s.

[0026] The conveyance distance of the workpiece from the starting point of pasting in the first lamination step of the present embodiment shown in Fig. 1(b) to the completion point of pasting in the second lamination step shown in Fig. 1(d) can be 7000 mm or less, can also be 6500 mm or less, can also be 6000 mm or less, can also be 4500 mm or less, and can also be 3000 mm or less. The conveyance time of the workpiece from the start of pasting in the first lamination step of the present embodiment shown in Fig. 1(b) to the completion of pasting in the second lamination step shown in Fig. 1(d) can be 400 s or less, can also be 150 s or less, can also be 130 s or less, can also be 110 s or less, can also be 90 s or less, and can also be 70 s or less.

[0027] The manufacturing method of the third laminate of the present embodiment can be carried out by connecting an apparatus for pasting a film for forming a back surface protective film and an apparatus for pasting a support sheet, or can be carried out within the same apparatus. As the same apparatus, for example, it can be implemented by an apparatus including a table for pasting a film for forming a back surface protective film, a table for pasting a support sheet, and a transfer arm. Specifically, the workpiece 14 input into the above apparatus is conveyed to the table for pasting a film for forming a back surface protective film by the transfer arm and is placed with the back surface 14b facing upward. On the table for pasting a film for forming a back surface protective film, a film 13 for forming a back surface protective film, which has been processed in advance outside the apparatus or immediately before inside the apparatus to a size adapted to the workpiece 14, is pasted on the back surface 14b side of the workpiece 14, resulting in a second laminate. The second laminate is conveyed to the support sheet pasting table by the transfer arm and is placed with the side of the film for forming a back surface protective film facing upward. On the support sheet pasting table, a support tape 10 is pasted on the film 13 for forming a back surface protective film of the second laminate, resulting in a third laminate.

[0028] In the first lamination step, the speed of attaching the protective film forming film 13 to the back side of the workpiece 14, and the speed of attaching the support sheet 10 to the protective film forming film 13 in the second lamination step can also be 100 mm / second or less, 80 mm / second or less, 60 mm / second or less, or 40 mm / second or less. By the fact that the attaching speed in the first lamination step and the attaching speed in the second lamination step are equal to or less than the upper limit value, the adhesion between the workpiece 14 and the protective film forming film 13 and the adhesion between the protective film forming film 13 and the support sheet 10 can be made good. The attaching speed in the first lamination step and the attaching speed in the second lamination step can also be 2 mm / second or more, 5 mm / second or more, or 10 mm / second or more. By the fact that the attaching speed in the first lamination step and the attaching speed in the second lamination step are equal to or more than the lower limit value, the production efficiency of the third laminate 19 is improved, and the conveyance time of the workpiece 14 from the start of attachment in the first lamination step to the completion of attachment in the second lamination step can be made 400 s or less. The attaching speed in the first lamination step and the attaching speed in the second lamination step can also be 2 to 100 mm / second, 2 to 80 mm / second, 5 to 60 mm / second, or 10 to 40 mm / second.

[0029] The apparatus preferably includes 1 to 5 film attaching tables for forming a back protective film, and more preferably includes 1 to 3. When the number of film attaching tables for forming a back protective film in the apparatus is equal to or more than the lower limit value of the range, the production efficiency is increased, and when it is equal to or less than the upper limit value, the space of the apparatus can be reduced.

[0030] The apparatus preferably includes 1 to 5 support sheet attaching tables, and more preferably includes 1 to 3. When the number of support sheet attaching tables in the apparatus is equal to or more than the lower limit value of the range, the production efficiency is increased, and when it is equal to or less than the upper limit value, the space of the apparatus can be reduced.

[0031] Preferably, the apparatus includes transfer arms corresponding to respective transfer paths. When the ratio of the number of transfer arms to the total number of tables is 1 or more, the production efficiency can be increased. Further, when two or more tables are provided, if the ratio of the number of transfer arms to the total number of tables is more than 0 and less than 1 (for example, the total number of transfer arms is 1 for two tables), the space of the apparatus can be reduced.

[0032] As a specific example of connecting the apparatus for attaching the film for forming the back surface protective film and the apparatus for attaching the support sheet, an apparatus having a mechanism for attaching the film for forming the back surface protective film and an apparatus having a mechanism for attaching the support sheet are connected in series, and between the respective mechanisms, a second laminate in which the film 13 for forming the back surface protective film is attached to the workpiece 14 is transferred one by one using a transfer arm.

[0033] In the present embodiment, a semiconductor wafer is used as the workpiece 14 shown in FIG. 1(a). One surface of the semiconductor wafer is a circuit surface 14a, and bumps are formed thereon. Further, in order to prevent the circuit surface 14a and the bumps of the semiconductor wafer from being crushed during back grinding of the semiconductor wafer or dents and cracks from occurring on the back surface of the wafer, the circuit surface 14a and the bumps of the semiconductor wafer may be protected by a tape 17 for protecting the circuit surface. The tape 17 for protecting the circuit surface is a tape for back grinding, and the back surface of the semiconductor wafer as the workpiece 14 (that is, the back surface 14b of the workpiece) may be a ground surface.

[0034] The workpiece 14 is not limited as long as it has a circuit surface 14a on one side and the other side can be regarded as the back surface. Examples of the workpiece 14 include a semiconductor wafer having a circuit surface on one side, and a semiconductor device panel composed of an aggregate of semiconductor devices in which individual electronic components are encapsulated with a sealing resin and which has a terminal forming surface (in other words, a circuit surface) of a semiconductor device with terminals on one side.

[0035] As the tape 17 for protecting the turning surface, for example, the surface protection sheet disclosed in JP-A-2016-192488 and JP-A-2009-141265 can be used. The tape 17 for protecting the turning surface is provided with an adhesive layer having appropriate releasability. The adhesive layer may be formed of a general-purpose weak adhesive type adhesive such as a rubber-based, acrylic resin, silicone resin, urethane resin, or vinyl ether resin. Further, the adhesive layer may be an energy ray curable adhesive that is cured by irradiation with energy rays to become releasable. The tape 17 for protecting the turning surface may have a double-sided tape shape, and the outer side of the tape 17 for protecting the turning surface may be fixed to a rigid support, or the work 14 may be fixed to a rigid support.

[0036] In this specification, "energy ray" means those having energy quanta among electromagnetic waves or charged particle beams. Examples of energy rays include ultraviolet rays, radiation, electron beams, etc. Ultraviolet rays can be irradiated, for example, by using a high-pressure mercury lamp, a xenon lamp, a xenon lamp, a black light, or an LED lamp as an ultraviolet ray source. Electron beams can be irradiated with those generated by an electron beam accelerator or the like. Also, in this specification, "energy ray curability" means the property of being cured by irradiation with energy rays, and "non-energy ray curability" means the property of not being cured even by irradiation with energy rays.

[0037] In the first lamination step of the present embodiment shown in FIG. 1(b), the film 13 for forming the back surface protective film can be used as the first laminate 5 shown in FIG. 2. The first laminate 5 shown in FIG. 2 includes a first release film 151 on one surface of the film 13 for forming the back surface protective film, and a second release film 152 on the other surface. After peeling off the first release film 151, in the first lamination step, the exposed surface 13a of the film 13 for forming the back surface protective film from which the release film has been peeled is attached to the back surface 14b of the workpiece 14 facing each other (FIG. 1(b)). The film 13 for forming the back surface protective film at this time may be one that has been pre-processed to match the shape of the workpiece 14, or may be processed in the apparatus immediately before use. Next, it is preferable to peel off the second release film 152 to form a second laminate (FIG. 1(c)).

[0038] The film for forming the back surface protective film shown in FIG. 2 is formed, for example, by applying a protective film-forming composition containing a solvent onto the release surface of the second release film 152 having a thickness of 10 to 100 μm with a knife coater, and then drying it in an oven at 120° C. for 2 minutes to form the film for forming the back surface protective film. Next, the release surface of the first release film 151 having a thickness of 10 to 100 μm is overlaid on the film for forming the back surface protective film and the two are bonded together to obtain a first laminate 5 composed of the first release film 151, the film for forming the back surface protective film (the film 13 for forming the back surface protective film in FIG. 2) (thickness: 3 to 50 μm), and the second release film 152. Such a first laminate 5 is suitable for storage in a roll shape, for example.

[0039] In the second lamination step shown in FIG. 1(d), a support sheet 10 is laminated on the back surface protective film forming film 13 laminated on the back surface 14b of the workpiece 14. The support sheet 10 is, for example, a circular polyethylene terephthalate film having a thickness of 80 μm and a diameter of 270 mm, and may be provided with a jig adhesive layer 16 on the outer peripheral portion. In the present embodiment, the workpiece 14 may be fixed to the fixing jig 18 together with the back surface protective film forming film 13. Then, the support sheet 10 may be laminated on the back surface protective film forming film 13 and fixed to the fixing jig 18 via the jig adhesive layer 16 (FIG. 1(e)).

[0040] (Protective film forming composition) As the composition of the protective film forming composition for forming the back surface protective film forming film, it is preferable to contain a binder polymer component and a curable component.

[0041] (Binder polymer component) The binder polymer component is used to impart sufficient adhesiveness and film-forming property (sheet-forming property) to the back surface protective film forming film. As the binder polymer component, conventionally known acrylic resins, polyester resins, urethane resins, acrylic urethane resins, silicone resins, rubber-based polymers, etc. can be used.

[0042] The weight average molecular weight (Mw) of the binder polymer component is preferably from 10,000 to 2,000,000, more preferably from 100,000 to 1,200,000. If the weight average molecular weight of the binder polymer component is too low, the adhesive force between the back surface protective film forming film and the support sheet becomes high, and transfer failure of the back surface protective film forming film may occur. If it is too high, the adhesiveness of the back surface protective film forming film decreases, and it may not be possible to transfer it to a chip or the like, or the back surface protective film may peel off from the chip or the like after transfer. That is, when Mw is equal to or greater than the lower limit of the above range, the adhesive force between the film for forming the back surface protective film and the support sheet does not become too high, and transfer defects of the film for forming the back surface protective film can be suppressed. When Mw is equal to or less than the upper limit of the above range, a decrease in the adhesiveness of the film for forming the back surface protective film is suppressed, and problems such as the inability to transfer to a chip or the peeling of the back surface protective film from the chip after transfer are suppressed. In the present embodiment, the weight average molecular weight (Mw) is a polystyrene equivalent value measured by gel permeation chromatography (GPC) method unless otherwise specified.

[0043] As the binder polymer component, an acrylic resin is preferably used. The glass transition temperature (Tg) of the acrylic resin is preferably in the range of -60 to 50°C, more preferably -50 to 40°C, and particularly preferably -40 to 30°C. If the glass transition temperature of the acrylic resin is too low, the peeling force between the film for forming the back surface protective film and the support sheet may become large, resulting in transfer defects of the film for forming the back surface protective film. If it is too high, the adhesiveness of the film for forming the back surface protective film may decrease, and it may become impossible to transfer to a chip or the back surface protective film may peel off from the chip after transfer. That is, when Tg is equal to or greater than the lower limit of the above range, the peeling force between the film for forming the back surface protective film and the support sheet does not become too high, and transfer defects of the film for forming the back surface protective film can be suppressed. When Tg is equal to or less than the upper limit of the above range, a decrease in the adhesiveness of the film for forming the back surface protective film is suppressed, and problems such as the inability to transfer to a chip or the peeling of the back surface protective film from the chip after transfer are suppressed. In this specification, the "glass transition temperature" is represented by the temperature of the inflection point of the DSC curve obtained by measuring the DSC curve of the sample using a differential scanning calorimeter.

[0044] Examples of the monomer constituting the acrylic resin include (meth)acrylic acid ester monomers or derivatives thereof. For example, alkyl (meth)acrylates in which the alkyl group has 1 to 18 carbon atoms, specifically methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, etc. can be mentioned. Also, (meth)acrylates having a cyclic skeleton, specifically cyclohexyl (meth)acrylate, benzyl (meth)acrylate, isobornyl (meth)acrylate, dicyclopentanyl (meth)acrylate, dicyclopentenyl (meth)acrylate, dicyclopentenyl oxyethyl (meth)acrylate, imide (meth)acrylate, etc. can be mentioned. Further, as monomers having a functional group, hydroxymethyl (meth)acrylate having a hydroxyl group, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, etc. can be mentioned; in addition, glycidyl (meth)acrylate having an epoxy group, etc. can be mentioned. As the acrylic resin, an acrylic resin containing a monomer having a hydroxyl group is preferable because it has good compatibility with the curable component described later. Also, the above acrylic resin may be copolymerized with acrylic acid, methacrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, etc.

[0045] In this specification, the term "(meth)acrylic acid" is a concept that includes both "acrylic acid" and "methacrylic acid". The same applies to terms similar to (meth)acrylic acid. For example, the term "(meth)acrylate" is a concept that includes both "acrylate" and "methacrylate", and the term "(meth)acryloyl group" is a concept that includes both "acryloyl group" and "methacryloyl group".

[0046] Furthermore, as the binder polymer component, a thermoplastic resin may be blended to maintain the flexibility of the protective film after curing. Such a thermoplastic resin preferably has a weight average molecular weight of 1,000 to 100,000, more preferably 3,000 to 80,000. The glass transition temperature of the thermoplastic resin is preferably -30 to 120°C, more preferably -20 to 120°C. Examples of the thermoplastic resin include polyester resin, urethane resin, phenoxy resin, polybutene, polybutadiene, polystyrene, etc. These thermoplastic resins can be used alone or in combination of two or more. By containing the above thermoplastic resin, the back surface protective film-forming film can follow the transfer surface of the back surface protective film-forming film, and the generation of voids and the like can be suppressed.

[0047] (Curing component) As the curing component, a thermosetting component and / or an energy ray-curable component is used.

[0048] As the thermosetting component, a thermosetting resin and a thermosetting agent are used. As the thermosetting resin, for example, an epoxy resin is preferable.

[0049] As the epoxy resin, a conventionally known epoxy resin can be used. Specific examples of the epoxy resin include polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydrogenated product, orthocresol novolak epoxy resin, dicyclopentadiene type epoxy resin, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenylene skeleton type epoxy resin, etc., and epoxy compounds having two or more functional groups in the molecule. These can be used alone or in combination of two or more.

[0050] In the film for forming the back protective film, the thermosetting resin is preferably contained in an amount of 1 to 1000 parts by mass, more preferably 10 to 500 parts by mass, and particularly preferably 20 to 200 parts by mass with respect to 100 parts by mass of the binder polymer component. If the content of the thermosetting resin is less than 1 part by mass, sufficient adhesiveness may not be obtained. If it exceeds 1000 parts by mass, the peel strength between the back protective film-forming film and the pressure-sensitive adhesive sheet or the base film becomes high, and transfer failure of the back protective film-forming film may occur. That is, when the content of the thermosetting resin is equal to or greater than the lower limit value of the above range, sufficient adhesiveness can be obtained. When the content of the thermosetting resin is equal to or less than the upper limit value of the above range, the peel strength between the back protective film-forming film and the pressure-sensitive adhesive sheet or the base film does not become too high, and transfer failure of the back protective film-forming film is suppressed.

[0051] The thermosetting agent functions as a curing agent for the thermosetting resin, particularly an epoxy resin. Preferred thermosetting agents include compounds having two or more functional groups capable of reacting with epoxy groups in one molecule. Examples of such functional groups include phenolic hydroxyl groups, alcoholic hydroxyl groups, amino groups, carboxyl groups, and acid anhydrides. Among these, phenolic hydroxyl groups, amino groups, acid anhydrides, etc. are preferably mentioned, and phenolic hydroxyl groups and amino groups are more preferably mentioned.

[0052] Specific examples of phenolic curing agents include polyfunctional phenolic resins, biphenol, novolac-type phenolic resins, dicyclopentadiene-based phenolic resins, zylock-type phenolic resins, and aralkylphenol resins. A specific example of an amine-based curing agent is DICY (dicyandiamide). These can be used alone or in combination of two or more.

[0053] The content of the thermosetting agent is preferably 0.1 to 500 parts by mass, more preferably 1 to 200 parts by mass, per 100 parts by mass of the thermosetting resin. If the content of the thermosetting agent is too low, insufficient curing may occur and adhesiveness may not be obtained. If it is excessive, the moisture absorption rate of the film for forming the back surface protective film may increase, which may reduce the reliability of the semiconductor device. That is, when the content of the thermosetting agent is equal to or higher than the lower limit value of the above range, insufficient curing is less likely to occur, and adhesiveness is easily obtained. When the content of the thermosetting agent is equal to or lower than the upper limit value of the above range, the moisture absorption rate of the film for forming the back surface protective film does not increase, and it is difficult to reduce the reliability of the semiconductor device.

[0054] As the energy ray curable component, a low molecular compound (energy ray polymerizable compound) containing an energy ray polymerizable group and polymerizing and curing upon irradiation with energy rays such as ultraviolet rays and electron beams can be used. Specifically, such energy ray curable components include acrylate compounds such as trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxy pentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, urethane acrylate oligomer, epoxy modified acrylate, polyether acrylate, and itaconic acid oligomer. Such compounds have at least one polymerizable double bond in the molecule, and usually have a weight average molecular weight of 100 to 30,000, preferably about 300 to 10,000. The compounding amount of the energy ray polymerizable compound is preferably 1 to 1500 parts by mass, more preferably 10 to 500 parts by mass, and particularly preferably 20 to 200 parts by mass, per 100 parts by mass of the binder polymer component.

[0055] Further, as the energy ray curable component, an energy ray curable polymer in which an energy ray polymerizable group is bonded to the main chain or side chain of the binder polymer component may be used. Such an energy ray curable polymer has both the function as a binder polymer component and the function as a curable component.

[0056] The main skeleton of the energy ray curable polymer is not particularly limited, and it may be an acrylic resin commonly used as a binder polymer component, or may be a polyester resin, a polyether resin, etc. However, since synthesis and physical property control are easy, it is particularly preferable to use an acrylic resin as the main skeleton.

[0057] The energy ray polymerizable group bonded to the main chain or side chain of the energy ray curable polymer is, for example, a group containing an energy ray polymerizable carbon-carbon double bond, and specifically, a (meth)acryloyl group etc. can be exemplified. The energy ray polymerizable group may be bonded to the energy ray curable polymer via an alkylene group, an alkyleneoxy group, or a polyalkyleneoxy group.

[0058] The weight average molecular weight (Mw) of the energy ray curable polymer to which the energy ray polymerizable group is bonded is preferably from 10,000 to 2,000,000, more preferably from 100,000 to 1,500,000. Further, the glass transition temperature (Tg) of the energy ray curable polymer is preferably in the range of -60 to 50°C, more preferably -50 to 40°C, and particularly preferably -40 to 30°C.

[0059] The energy ray curable polymer is obtained, for example, by reacting an acrylic resin containing a functional group such as a hydroxyl group, a carboxyl group, an amino group, a substituted amino group, or an epoxy group with a polymerizable group-containing compound having 1 to 5 substituents reactive with the functional group and an energy ray polymerizable carbon-carbon double bond per molecule. Examples of the substituent reactive with the functional group include an isocyanate group, a glycidyl group, and a carboxyl group.

[0060] Examples of the compound containing a coincidence group include (meth)acryloyloxyethyl isocyanate, meta-isopropenyl-α,α-dimethylbenzyl isocyanate, (meth)acryloyl isocyanate, allyl isocyanate, glycidyl (meth)acrylate; (meth)acrylic acid, etc.

[0061] The acrylic resin is preferably a copolymer composed of a (meth)acrylic monomer or its derivative having a functional group such as a hydroxyl group, a carboxyl group, an amino group, a substituted amino group, an epoxy group, etc., and another (meth)acrylic acid ester monomer or its derivative copolymerizable therewith.

[0062] Examples of the (meth)acrylic monomer or its derivative having a functional group such as a hydroxyl group, a carboxyl group, an amino group, a substituted amino group, an epoxy group, etc. include 2-hydroxyethyl (meth)acrylate and 2-hydroxypropyl (meth)acrylate having a hydroxyl group; acrylic acid, methacrylic acid, and itaconic acid having a carboxyl group; glycidyl methacrylate and glycidyl acrylate having an epoxy group, etc.

[0063] Examples of the other (meth)acrylic acid ester monomer or its derivative copolymerizable with the above monomer include alkyl (meth)acrylates having 1 to 18 carbon atoms in the alkyl group, specifically methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, etc.; (meth)acrylates having a cyclic skeleton, specifically cyclohexyl (meth)acrylate, benzyl (meth)acrylate, isobornyl acrylate, dicyclopentanyl acrylate, dicyclopentenyl acrylate, dicyclopentenyl oxyethyl acrylate, imide acrylate, etc. Further, vinyl acetate, acrylonitrile, styrene, etc. may be copolymerized in the above acrylic resin.

[0064] Even when an energy ray-curable polymer is used, the above-described energy ray-polymerizable compound may be used in combination, or a binder polymer component may be used in combination. Regarding the relationship of the blending amounts of these three components in the film for forming a back surface protective film in the present invention, the energy ray-polymerizable compound is preferably contained in an amount of 1 to 1500 parts by mass, more preferably 10 to 500 parts by mass, and particularly preferably 20 to 200 parts by mass with respect to 100 parts by mass of the sum of the masses of the energy ray-curable polymer and the binder polymer component.

[0065] By imparting energy ray curability to the film for forming a back surface protective film, the film for forming a back surface protective film can be cured simply and in a short time, and the production efficiency of the chip with a protective film is improved. Conventionally, the protective film for a chip has generally been formed of a thermosetting resin such as an epoxy resin. However, since the curing temperature of the thermosetting resin exceeds 200°C and the curing time requires about 2 hours, it has been an obstacle to improving the production efficiency. However, since the film for forming a back surface protective film having energy ray curability is cured in a short time by energy ray irradiation, a protective film can be formed simply and can contribute to the improvement of production efficiency.

[0066] The film for forming a back surface protective film can contain the following components in addition to the above-described binder polymer component and curable component.

[0067] (Colorant) The film for forming the back surface protective film preferably contains a colorant. By incorporating a colorant into the film for forming the back surface protective film, when the semiconductor device is incorporated into equipment, infrared rays and the like generated from surrounding devices can be shielded, and malfunction of the semiconductor device due to them can be prevented. In addition, the visibility of characters when printing a product number or the like on the protective film obtained by curing the film for forming the back surface protective film is improved. That is, in a semiconductor device or semiconductor chip on which a protective film is formed, a product number or the like is usually printed on the surface of the protective film by a laser marking method (a method of performing printing by scraping off the surface of the protective film with laser light). Since the protective film contains a colorant, a sufficient contrast difference is obtained between the portion scraped off by the laser light of the protective film and the portion not so scraped off, and the visibility is improved. As the colorant, organic or inorganic pigments and dyes are used. Among these, black pigments are preferable from the viewpoints of electromagnetic wave and infrared ray shielding properties. As the black pigment, carbon black, iron oxide, manganese dioxide, aniline black, activated carbon, etc. are used, but it is not limited thereto. From the viewpoint of enhancing the reliability of the semiconductor device, carbon black is particularly preferable. The colorant may be used alone or in combination of two or more. The high curability of the film for forming the back surface protective film in the present invention is particularly preferably exhibited when a colorant that reduces the transmittance of both visible light and / or infrared rays and ultraviolet rays is used and the transmittance of ultraviolet rays is reduced. The colorant that reduces the transmittance of both visible light and / or infrared rays and ultraviolet rays is not particularly limited as long as it has absorbency or reflectivity in the wavelength regions of both visible light and / or infrared rays and ultraviolet rays in addition to the above black pigments.

[0068] The blending amount of the colorant is preferably 0.1 to 35 parts by mass, more preferably 0.5 to 25 parts by mass, and particularly preferably 1 to 15 parts by mass with respect to 100 parts by mass of the total solid content constituting the film for forming the back surface protective film.

[0069] (Curing accelerator) The curing accelerator is used to adjust the curing rate of the film for forming the back surface protective film. The curing accelerator is particularly preferably used when an epoxy resin and a thermosetting agent are used in combination in the curable component.

[0070] Preferred curing accelerators include tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris(dimethylaminomethyl)phenol; imidazoles such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole; organic phosphines such as tributylphosphine, diphenylphosphine, triphenylphosphine; and tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine tetraphenylborate. These can be used alone or in admixture of two or more.

[0071] The curing accelerator is preferably contained in an amount of 0.01 to 10 parts by mass, more preferably 0.1 to 1 part by mass, based on 100 parts by mass of the curable component. By containing the curing accelerator in the amount within the above range, excellent adhesion properties can be obtained even when exposed to high temperature and high humidity, and high reliability can be achieved even when exposed to severe reflow conditions. If the content of the curing accelerator is too small, insufficient curing will result in insufficient adhesion properties. If it is excessive, the curing accelerator with high polarity will move to the adhesion interface side in the film for forming the back surface protective film under high temperature and high humidity and segregate, thereby reducing the reliability of the semiconductor device.

[0072] (Coupling agent) The coupling agent may be used to improve the adhesiveness, adhesion and / or cohesiveness of the film for forming the back surface protective film to the chip. Also, by using the coupling agent, the water resistance of the protective film obtained by curing the film for forming the back surface protective film can be improved without impairing the heat resistance of the protective film.

[0073] As the coupling agent, a compound having a group that reacts with a functional group of a binder polymer component, a curable component, etc. is preferably used. As the coupling agent, a silane coupling agent is desirable. Such coupling agents include γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-(methacryloxypropyl)trimethoxysilane, γ-aminopropyltrimethoxysilane, N-6-(aminoethyl)-γ-aminopropyltrimethoxysilane, N-6-(aminoethyl)-γ-aminopropylmethyldiethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, bis(3-triethoxysilylpropyl)tetrasulfane, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriacetoxysilane, imidazole silane, and the like. These can be used alone or in combination of two or more.

[0074] The coupling agent is usually contained in a proportion of 0.1 to 20 parts by mass, preferably 0.2 to 10 parts by mass, more preferably 0.3 to 5 parts by mass, based on 100 parts by mass in total of the binder polymer component and the curable component. If the content of the coupling agent is less than 0.1 part by mass, the above effects may not be obtained, and if it exceeds 20 parts by mass, it may cause outgassing. That is, when the content of the coupling agent is at least the lower limit value of the above range, the effect of the coupling agent can be obtained, and when it is at most the upper limit value, outgassing is suppressed.

[0075] (Inorganic filler) By blending an inorganic filler into the film for forming the back surface protective film, it becomes possible to adjust the coefficient of thermal expansion of the protective film after curing, and by optimizing the coefficient of thermal expansion of the protective film after curing with respect to the semiconductor chip, the reliability of the semiconductor device can be improved. Also, it becomes possible to reduce the moisture absorption rate of the protective film after curing.

[0076] Preferred inorganic fillers include powders such as silica, alumina, talc, calcium carbonate, titanium oxide, iron oxide, silicon carbide, boron nitride, etc., beads obtained by spheroidizing these, single crystal fibers, glass fibers, and the like. Among these, silica fillers and alumina fillers are preferred. The above inorganic fillers can be used alone or in combination of two or more. The content of the inorganic filler can usually be adjusted in the range of 1 to 80 parts by mass with respect to 100 parts by mass of the total solid content constituting the film for forming the back surface protective film.

[0077] (Photoinitiator) When the film for forming the back surface protective film contains an energy ray curable component as the curable component described above, when using it, an energy ray such as ultraviolet ray is irradiated to cure the energy ray curable component. At this time, by containing a photoinitiator in the composition, the polymerization curing time and the light irradiation amount can be reduced.

[0078] Specific examples of such photoinitiators include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin benzoic acid methyl, benzoin dimethyl ketal, 2,4 - diethylthioxanthone, α - hydroxycyclohexyl phenyl ketone, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzyl, dibenzyl, diacetyl, 1,2 - diphenylmethane, 2 - hydroxy - 2 - methyl - 1 - [4 - (1 - methylvinyl)phenyl]propanone, 2,4,6 - trimethylbenzoyl diphenyl phosphine oxide, β - chloroanthraquinone, and the like. The photoinitiator can be used alone or in combination of two or more.

[0079] The blending ratio of the photoinitiator is preferably 0.1 to 10 parts by mass, more preferably 1 to 5 parts by mass, based on 100 parts by mass of the energy ray curable component. If it is less than 0.1 part by mass, sufficient transferability may not be obtained due to insufficient photopolymerization. If it exceeds 10 parts by mass, residues that do not contribute to photopolymerization may be generated, and the curability of the film for forming the back surface protective film may become insufficient. That is, when the blending ratio of the photoinitiator is equal to or higher than the lower limit value of the above range, photopolymerization proceeds sufficiently and satisfactory transferability is obtained. When it is equal to or lower than the upper limit value, generation of residues that do not contribute to photopolymerization is suppressed, and the curability of the film for forming the back surface protective film becomes sufficient.

[0080] (Crosslinking agent) In order to adjust the initial adhesion and cohesion of the film for forming the back surface protective film, a crosslinking agent can also be added. Examples of the crosslinking agent include organic polyvalent isocyanate compounds and organic polyvalent imine compounds.

[0081] Examples of the above-mentioned organic polyvalent isocyanate compounds include aromatic polyvalent isocyanate compounds, aliphatic polyvalent isocyanate compounds, alicyclic polyvalent isocyanate compounds, trimers of these organic polyvalent isocyanate compounds, and terminal isocyanate urethane prepolymers obtained by reacting these organic polyvalent isocyanate compounds with polyol compounds.

[0082] Examples of the organic polyvalent isocyanate compounds include 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, trimethylolpropane adduct tolylene diisocyanate, and lysine isocyanate.

[0083] Examples of the above-mentioned organic polyvalent imine compounds include N,N'-diphenylmethane-4,4'-bis(1-aziridinecarboxamide), trimethylolpropane-tri-β-aziridinylpropionate, tetramethylolmethane-tri-β-aziridinylpropionate, and N,N'-toluene-2,4-bis(1-aziridinecarboxamide) triethylenemelamine.

[0084] The crosslinking agent is usually used in a ratio of 0.01 to 20 parts by mass, preferably 0.1 to 10 parts by mass, more preferably 0.5 to 5 parts by mass, based on 100 parts by mass of the total amount of the binder polymer component and the energy ray-curable polymer.

[0085] (General Additives) In addition to the above, various additives may be blended in the film for forming the back surface protective film as needed. Examples of the various additives include leveling agents, plasticizers, antistatic agents, antioxidants, ion scavengers, gettering agents, and chain transfer agents.

[0086] (Solvent) The protective film-forming composition preferably further contains a solvent. The protective film-forming composition containing a solvent has good handleability. The solvent is not particularly limited, but preferred examples include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylpropan-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone. The solvent contained in the protective film-forming composition may be only one kind or two or more kinds. When there are two or more kinds, their combinations and ratios can be arbitrarily selected.

[0087] The solvent contained in the protective film-forming composition is preferably methyl ethyl ketone or the like in terms of being able to mix the components contained in the protective film-forming composition more uniformly.

[0088] The film for forming a back surface protective film obtained by applying and drying the protective film forming composition composed of the above-described components has adhesiveness and curability, and easily adheres by pressing on a work (such as a semiconductor wafer or a chip) in an uncured state. When pressing, the film for forming a back surface protective film may be heated. And finally, through curing, a protective film with high impact resistance can be provided, which also has excellent adhesive strength and can maintain a sufficient protective function even under severe high temperature and high humidity conditions. Note that the film for forming a back surface protective film may have a single-layer structure, or may have a multilayer structure as long as it includes one or more layers containing the above components. The ratio of the contents of the components that do not vaporize at normal temperature in the film for forming a back surface protective film is the same as the ratio of the contents of the above components in the protective film forming composition. In this specification, "normal temperature" means a temperature that is not particularly cooled or heated, that is, an ordinary temperature, and for example, a temperature of 15 to 25°C can be mentioned.

[0089] The coating of the protective film forming composition may be performed by a known method. For example, methods using various coaters such as an air knife coater, a blade coater, a bar coater, a gravure coater, a roll coater, a roll knife coater, a curtain coater, a die coater, a knife coater, a screen coater, a Meyer bar coater, and a kiss coater can be mentioned.

[0090] The drying conditions of the protective film forming composition are not particularly limited, but when the protective film forming composition contains a solvent described later, it is preferably dried by heating. The protective film forming composition containing a solvent is preferably dried, for example, under the conditions of 70 to 130°C for 10 seconds to 5 minutes.

[0091] The thickness of the film for forming a back surface protective film is not particularly limited, but is preferably 3 to 300 μm, more preferably 5 to 250 μm, and particularly preferably 7 to 200 μm. In this specification, the "thickness" is a value represented by the average of the thicknesses measured at five randomly selected locations on a cut surface obtained by randomly cutting an object in the thickness direction using a contact thickness gauge.

[0092] <Support sheet> Examples of the support sheet 10 used in one aspect of the present invention include a sheet composed only of the base material 11 and an adhesive sheet having an adhesive layer 12 on the base material 11. The support sheet included in the third laminate of one aspect of the present invention serves as a release sheet for preventing the adhesion of dust or the like to the surface of the film for forming the back surface protective film, or a dicing sheet or the like for protecting the surface of the film for forming the back surface protective film in a dicing process or the like.

[0093] The thickness of the support sheet is appropriately selected according to the application. From the viewpoint of imparting sufficient flexibility and good adhesiveness to the silicon wafer, it is preferably 10 to 500 μm, more preferably 20 to 350 μm, and still more preferably 30 to 200 μm. Note that the thickness of the support sheet described above includes not only the thickness of the base material constituting the support sheet but also the thicknesses of those layers and films when there is an adhesive layer.

[0094] (Base material) The base material 11 constituting the support sheet 10 is preferably a resin film. Examples of the resin film include polyethylene films such as low-density polyethylene (LDPE) films and linear low-density polyethylene (LLDPE) films, ethylene-propylene copolymer films, polypropylene films, polybutene films, polybutadiene films, polymethylpentene films, polyvinyl chloride films, vinyl chloride copolymer films, polyethylene terephthalate films, polyethylene naphthalate films, polybutylene terephthalate films, polyurethane films, ethylene-vinyl acetate copolymer films, ionomer resin films, ethylene-(meth)acrylic acid copolymer films, ethylene-(meth)acrylate copolymer films, polystyrene films, polycarbonate films, polyimide films, fluororesin films, and the like. The base material used in one embodiment of the present invention may be a single-layer film composed of one type of resin film, or may be a laminated film formed by laminating two or more types of resin films. In addition, in one embodiment of the present invention, a sheet subjected to surface treatment may be used as a support sheet on the surface of a base material such as the above-described resin film.

[0095] These resin films may be crosslinked films. In addition, those obtained by coloring these resin films or performing printing can also be used. Furthermore, the resin film may be formed by extruding a thermoplastic resin into a sheet, or may be stretched, or a film obtained by thinning and curing a curable resin by a predetermined means to form a sheet may also be used.

[0096] Among these resin films, from the viewpoint of having excellent heat resistance, having appropriate flexibility to have expandability, and being easily maintained in pickup suitability, a base material containing a polypropylene film is preferable. Note that the configuration of the base material containing a polypropylene film may be a single-layer structure composed only of a polypropylene film, or may be a multilayer structure composed of a polypropylene film and another resin film. When the film for forming the back surface protective film is thermosetting, the resin film constituting the base material has heat resistance, thereby suppressing damage to the base material caused by heat and suppressing the occurrence of defects in the manufacturing process of the semiconductor device.

[0097] When using a sheet composed only of the base material as the support sheet, from the viewpoint of adjusting the peeling force within a certain range, the surface tension of the surface of the base material that contacts the surface of the film for forming the back surface protective film is preferably 20 to 50 mN / m, more preferably 23 to 45 mN / m, and still more preferably 25 to 40 mN / m.

[0098] The thickness of the base material constituting the support sheet is preferably 10 to 500 μm, more preferably 15 to 300 μm, and still more preferably 20 to 200 μm.

[0099] (Adhesive sheet) Examples of the adhesive sheet used as the support sheet 10 in one aspect of the present invention include those having an adhesive layer 12 formed from an adhesive on a base material 11 such as the above-described resin film. FIG. 11 is a schematic cross-sectional view showing an example of the support sheet 10 in which the adhesive layer 12 is provided on the base material 11. When the support sheet 10 includes the adhesive layer 12, in the second lamination step, the adhesive layer 12 of the support sheet 10 is laminated on the film 13 for forming the back surface protective film.

[0100] Examples of the adhesive, which is a material for forming the adhesive layer, include an adhesive composition containing an adhesive resin, and the adhesive composition may further contain general-purpose additives such as the above-described cross-linking agent and tackifier. Examples of the adhesive resin include, when focusing on the structure of the resin, for example, acrylic resin, urethane resin, phenoxy resin, silicone resin, saturated polyester resin, vinyl ether resin, etc., and acrylic resin is preferred. Also, when focusing on the function of the resin, for example, energy ray curable adhesives, heat foaming adhesives, energy ray foaming adhesives, etc. can be mentioned. In one aspect of the present invention, from the viewpoint of adjusting the peel force within a certain range and improving the pick-up property, an energy ray-curable pressure-sensitive adhesive sheet having an energy ray-curable pressure-sensitive adhesive layer formed from a pressure-sensitive adhesive composition containing an energy ray-curable resin, or a pressure-sensitive adhesive sheet having a slightly pressure-sensitive pressure-sensitive adhesive layer is preferable. The energy ray-curable resin may be a resin having a polymerizable group such as a (meth)acryloyl group or a vinyl group, but is preferably a pressure-sensitive adhesive resin having a polymerizable group.

[0101] In the first lamination step, when poor adhesion of the back surface protective film forming film occurs, such as the back surface protective film forming film not being entirely adhered to the work such as a semiconductor wafer, the floating of the back surface protective film forming film occurs, or wrinkles of the back surface protective film forming film occur, the support sheet can also serve as a peeling sheet for the back surface protective film forming film. Even when poor adhesion of the back surface protective film forming film occurs in the first lamination step, the third laminate is manufactured through the second lamination step as it is. Then, the work such as a semiconductor wafer can be reworked by detaching the back surface protective film forming film together with the support sheet from the work such as a semiconductor wafer. At this time, considering the production tact, it is necessary to quickly peel the support sheet from the fixing jig (i.e., the ring frame), and the jig adhesive layer is preferably energy ray-curable. Further, by using a support sheet provided with an energy ray-curable pressure-sensitive adhesive layer on the base material, the support sheet can be directly fixed to a fixing jig such as a ring frame without passing through the jig adhesive layer, and excellent reworkability can be achieved by irradiating energy rays such as ultraviolet rays.

[0102] Also, from the viewpoint of adjusting the peel force within a certain range, a pressure-sensitive adhesive containing an acrylic resin is preferable. The acrylic resin is preferably an acrylic polymer having a structural unit (x1) derived from an alkyl (meth)acrylate, and more preferably an acrylic copolymer having the structural unit (x1) and a structural unit (x2) derived from a functional group-containing monomer.

[0103] The number of carbon atoms of the alkyl group in the above alkyl (meth) acrylate is preferably 1 to 18, more preferably 1 to 12, still more preferably 1 to 8. Examples of the alkyl (meth) acrylate include the same ones as those described in the part of the binder polymer component above. The alkyl (meth) acrylate may be used alone or in combination of two or more. The content of the constitutional unit (x1) is usually 50 to 100% by mass, preferably 50 to 99.9% by mass, more preferably 60 to 99% by mass, still more preferably 70 to 95% by mass, based on the total constitutional units (100% by mass) of the acrylic polymer.

[0104] Examples of the functional group-containing monomer include a hydroxy group-containing monomer, a carboxy group-containing monomer, an epoxy group-containing monomer, etc. Specific examples of each monomer are the same as those exemplified in the part of the binder polymer component. These may be used alone or in combination of two or more. The content of the constitutional unit (x2) is usually 0 to 40% by mass, preferably 0.1 to 40% by mass, more preferably 1 to 30% by mass, still more preferably 5 to 20% by mass, based on the total constitutional units (100% by mass) of the acrylic polymer.

[0105] Further, as the acrylic resin used in one aspect of the present invention, an energy ray-curable acrylic resin obtained by reacting a compound having an energy ray-polymerizable group with an acrylic copolymer having the above constitutional units (x1) and (x2) may be used. Examples of the compound having an energy ray-polymerizable group include compounds having a polymerizable group such as a (meth) acryloyl group and a vinyl group.

[0106] When using an adhesive containing an acrylic resin, from the viewpoint of adjusting the peel strength within a certain range, it is preferable to contain a crosslinking agent together with the acrylic resin. Examples of the crosslinking agent include isocyanate-based crosslinking agents, imine-based crosslinking agents, epoxy-based crosslinking agents, oxazoline-based crosslinking agents, carbodiimide-based crosslinking agents, etc. From the viewpoint of adjusting the peel strength within a certain range, isocyanate-based crosslinking agents are preferred. The content of the crosslinking agent is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 15 parts by mass, still more preferably 0.5 to 10 parts by mass, and even more preferably 1 to 8 parts by mass, based on 100 parts by mass of the total mass of the acrylic resin contained in the pressure-sensitive adhesive.

[0107] The support sheet 10 may be composed of one layer (single layer) or may be composed of two or more layers. When the support sheet is composed of a plurality of layers, the constituent materials and thicknesses of these multiple layers may be the same as or different from each other, and the combination of these multiple layers is not particularly limited as long as the effects of the present invention are not impaired.

[0108] In this specification, not limited to the case of the support sheet, "the plurality of layers may be the same as or different from each other" means that "all the layers may be the same, all the layers may be different, or only some of the layers may be the same", and further, "the plurality of layers are different from each other" means that "at least one of the constituent materials and thicknesses of each layer is different from each other".

[0109] The support sheet may be transparent, opaque, or colored according to the purpose. For example, when the film for forming the back surface protective film has energy ray curability, the support sheet preferably transmits energy rays. For example, in order to optically inspect the film for forming the back surface protective film through the support sheet, the support sheet is preferably transparent.

[0110] In this embodiment, the rotating surface 14a of the workpiece 14 is protected by the rotating surface protection tape 17, and after the second lamination step, a peeling step of peeling the rotating surface protection tape 17 from the rotating surface 14a of the workpiece 14 can be included. In this embodiment, the rotating surface protection tape 17 has an energy ray curable adhesive layer on the side adhered to the rotating surface 14a, which becomes re-peelable by curing upon irradiation with energy rays. In the peeling step, the adhesive layer of the rotating surface protection tape 17 is irradiated with energy rays to cure the adhesive layer and make it re-peelable, so that the rotating surface protection tape 17 can be easily peeled from the rotating surface 14a of the workpiece 14.

[0111] The method for manufacturing the third laminate of this embodiment may include a step of laser marking the back surface protection film forming film 13 by irradiating a laser from the side of the support sheet 10. Since the method for manufacturing the third laminate of this embodiment laminates the support sheet 10 on the back surface protection film forming film 13, when a laser is irradiated through the support sheet from the side of the support sheet, laser marking can be performed on the surface of the back surface protection film forming film 13 that is in contact with the support sheet 10.

[0112] FIG. 3 is a schematic cross-sectional view schematically showing another example of an embodiment of the method for manufacturing the third laminate. In the figures after FIG. 3, the same components as those shown in the already described figures are given the same reference numerals as in the case of the already described figures, and the detailed description thereof is omitted.

[0113] In this embodiment, the workpiece 14 is a semiconductor device panel composed of an assembly in which semiconductor devices, each having at least one electronic component 62 encapsulated with an encapsulating resin layer 64, are arranged side by side in a planar manner. The method for manufacturing the third laminate of this embodiment is a method for manufacturing a third laminate 19 in which a semiconductor device panel as the workpiece 14, a film 13 for forming a back surface protective film, and a support sheet 10 are laminated in this order. One surface of the workpiece 14 is a circuit surface 14a and the other surface is a back surface 14b (Fig. 3(a')), and a first lamination step of attaching the film 13 for forming a back surface protective film to the back surface 14b side of the workpiece 14 (Fig. 3(b')) and a second lamination step of attaching the support sheet 10 to the film 13 for forming a back surface protective film (Fig. 3(c')) are included in this order (Fig. 3(a')(d')). In this embodiment, the period from the first lamination step to the second lamination step (Fig. 3(a') to (d')) is performed by connecting an apparatus for attaching the film for forming a back surface protective film and an apparatus for attaching the support sheet, or is performed within the same apparatus. Therefore, in this embodiment, during the period from the first lamination step to the second lamination step, the second laminate in which the film 13 for forming a back surface protective film is laminated on the workpiece 14 can be conveyed one by one to the second lamination step shown in Fig. 3(d') without being housed in a cassette. By performing it within the same apparatus, the apparatus space can be further reduced. By connecting an apparatus for attaching the film for forming a back surface protective film and an apparatus for attaching the support sheet and performing it, it is possible to cope by modifying a conventional apparatus without designing from scratch, and the initial cost can be reduced. And since the second laminate is not housed in a cassette and conveyed outside the apparatus, the production efficiency is improved, and contamination and breakage of the second laminate can be suppressed.

[0114] The film 13 for forming a back surface protective film used in the first lamination step may be processed in advance to the shape of the workpiece, or may be processed within the same apparatus immediately before performing the first lamination step. When the size of the workpiece is constant on the manufacturing line used, the former, which can be processed in advance, is more efficient. When the size of the workpiece may be changed, the latter has a cost merit because there is no waste of the film for forming a back surface protective film.

[0115] Also, in other embodiments, the conveyance distance of the workpiece 14 from the pasting start point of the first lamination step to the pasting completion point of the second lamination step can be designed to be 7000 mm or less, and the apparatus space can be reduced. The conveyance distance of the workpiece 14 from the pasting start point of the first lamination step to the pasting completion point of the second lamination step can also be 6500 mm or less, 6000 mm or less, 4500 mm or less, or 3000 mm or less.

[0116] Also, in still other embodiments, the conveyance time of the workpiece 14 from the start of pasting in the first lamination step to the completion of pasting in the second lamination step can be 400 s or less, or 150 s or less, and the process time can be shortened. The conveyance time of the workpiece 14 from the start of pasting in the first lamination step to the completion of pasting in the second lamination step can also be 130 s or less, 110 s or less, 90 s or less, or 70 s or less.

[0117] When the conveyance time of the workpiece 14 from the start of pasting in the first lamination step to the completion of pasting in the second lamination step is roughly divided into three times, i.e., the time taken for the first lamination step, the conveyance time from the location where the first lamination step is performed to the location where the second lamination step is performed, and the time taken for the second lamination step, the preferable ranges of the respective times are the same as those described in the manufacturing method of FIG. 1.

[0118] The method for manufacturing the third laminate of the present embodiment can be carried out by connecting an apparatus for pasting a film for forming a back surface protective film and an apparatus for pasting a support sheet, or can be carried out within the same apparatus. As the same apparatus, it is preferable to use the apparatus described in the manufacturing method of FIG. 1.

[0119] In this embodiment, the semiconductor device panel may be formed by arranging individual semiconductor devices in a planar manner within a substantially circular region, or may be formed by arranging individual semiconductor devices in a planar manner within a substantially rectangular region.

[0120] Also in this embodiment shown in FIG. 3, similar to the embodiment shown in FIG. 1, since the support sheet 10 is laminated on the back surface protective film forming film 13, when a laser is irradiated through the support sheet from the side of the support sheet 10, laser marking can be performed on the surface of the back surface protective film forming film 13 that is in contact with the support sheet 10.

[0121] <<Method for manufacturing the fourth laminate>> The method for manufacturing the fourth laminate of this embodiment includes a curing step of curing the back surface protective film forming film 13 of the third laminate 19 manufactured by the method for manufacturing the third laminate, to form a back surface protective film 13'. It is a method for manufacturing a fourth laminate 19' in which a workpiece 14, a back surface protective film 13', and a support sheet 10 are laminated in this order.

[0122] FIG. 4 is a schematic cross-sectional view schematically showing an example of an embodiment of the method for manufacturing the fourth laminate. The method for manufacturing the fourth laminate of this embodiment includes, after the second lamination step, a peeling step of peeling the circuit surface protection tape 17 from the circuit surface 14a of the workpiece 14 (FIG. 4(e)), a step of performing laser marking by irradiating the back surface protective film forming film 13 with a laser from the side of the support sheet 10 (FIG. 4(f)), and a curing step of curing the back surface protective film forming film 13 to form a back surface protective film 13' (FIG. 4(g)). In this embodiment, a thermosetting back surface protective film forming film is used, and in the curing step of this embodiment, it is thermally cured under the conditions of 130°C for 2 hours.

[0123] When the thermosetting back surface protective film forming film is heat-treated to be thermally cured to form the back surface protective film, the curing conditions are not particularly limited as long as the back surface protective film has a degree of curing sufficient to exhibit its function, and may be appropriately selected according to the type of the thermosetting back surface protective film forming film.

[0124] For example, the heating temperature during thermosetting is preferably 100 to 200 °C, more preferably 110 to 180 °C, and particularly preferably 120 to 170 °C. And the heating time during the thermosetting is preferably 0.5 to 5 hours, more preferably 0.5 to 3 hours, and particularly preferably 1 to 2 hours. In the curing step, when thermosetting, the order of the peeling step is preferably before the curing step in consideration of the heat resistance of the circuit surface protection tape 17.

[0125] FIG. 5 is a schematic cross-sectional view schematically showing another example of an embodiment of a method for manufacturing a fourth laminate. The method for manufacturing the fourth laminate of this embodiment includes a peeling step (FIG. 5(e)) of peeling the circuit surface protection tape 17 from the circuit surface 14a of the workpiece 14, and a curing step (FIG. 5(f')) of curing the back surface protective film forming film 13 to form the back surface protective film 13', and a step of laser marking the back surface protective film 13' by irradiating a laser from the side of the support sheet 10 (FIG. 5(g')).

[0126] <<Manufacturing Method of Semiconductor Device with Back Surface Protective Film>> FIG. 6 is a schematic cross-sectional view schematically showing an example of an embodiment of a method for manufacturing a semiconductor device with a back surface protective film. The method for manufacturing a semiconductor device with a back surface protective film of this embodiment includes a step of dicing the workpiece 14 and the back surface protective film 13' of the fourth laminate 19' manufactured by the method for manufacturing the fourth laminate to form a semiconductor device 21 with a back surface protective film (FIGS. 6(h) and 6(i)), and a step of picking up the semiconductor device 21 with a back surface protective film from the support sheet 10 (FIG. 6(j)).

[0127] FIG. 7 is a schematic cross-sectional view schematically showing another example of an embodiment of a method for manufacturing a semiconductor device with a back surface protective film. The method for manufacturing a semiconductor device with a back surface protective film according to this embodiment includes a step of dicing a back surface protective film forming film 13 and a workpiece 14 of a third laminate 19 manufactured by the method for manufacturing the third laminate to obtain a semiconductor device 21' with a back surface protective film forming film (FIGS. 7(h') and 7(i')), a step of picking up the semiconductor device 21' with a back surface protective film forming film from a support sheet 10 (FIG. 7(j')), and a curing step of curing the back surface protective film forming film 13 to form a back surface protective film 13' (FIG. 7(k')).

[0128] FIG. 8 is a schematic cross-sectional view schematically showing another example of an embodiment of a method for manufacturing a semiconductor device with a back surface protective film. The method for manufacturing a semiconductor device with a back surface protective film according to this embodiment includes a step of dicing a back surface protective film forming film 13 and a workpiece 14 of a third laminate 19 manufactured by the method for manufacturing the third laminate to obtain a semiconductor device 21' with a back surface protective film forming film (FIGS. 8(h) and 8(i)), a curing step of curing the back surface protective film forming film 13 to form a back surface protective film 13' (FIG. 8(j')), and a step of picking up the semiconductor device 21 with a back surface protective film from the support sheet 10.

[0129] In the method for manufacturing a semiconductor device with a back surface protective film according to this embodiment, the back surface protective film forming film 13 is thermosetting. In the step of forming the back surface protective film according to this embodiment, for example, the back surface protective film forming film 13 is thermally cured under the conditions of 130°C and 2 h.

[0130] When forming a back surface protective film by thermally curing a thermosetting back surface protective film forming film, the curing conditions are not particularly limited as long as the back surface protective film has a degree of curing sufficient to exhibit its function as described above, and may be appropriately selected according to the type of the thermosetting back surface protective film forming film.

[0131] The method for manufacturing a semiconductor device with a back surface protective film according to this embodiment may be a process in which the film 13 for forming the back surface protective film is energy ray curable, and the step of forming the back surface protective film is a step of irradiating the film 13 for forming the back surface protective film with energy rays to cure it by energy ray curing.

[0132] When forming a protective film by curing an energy ray curable film for forming a back surface protective film, the curing conditions are not particularly limited as long as the cured film has a degree of cure sufficient for the protective film to fully exhibit its function, and may be appropriately selected according to the type of the energy ray curable film for forming the back surface protective film. For example, when curing the energy ray curable film for forming the back surface protective film, the illuminance of the energy rays is preferably 4 to 280 mW / cm 2 And the light amount of the energy rays during the curing is preferably 3 to 1000 mJ / cm 2

[0133] As the energy ray curable film for forming the back surface protective film, for example, those disclosed in WO 2017 / 188200 and WO 2017 / 188218 can also be used.

Industrial Applicability

[0134] The method for manufacturing the third laminate of the present invention can be used for manufacturing a semiconductor device with a back surface protective film.

Explanation of Reference Numerals

[0135] ​1... Composite sheet for forming a protective film, 5... First laminate, 6... Second laminate, 7... Semiconductor chip with a back surface protective film, 8... Semiconductor wafer, 8b... Back surface of the semiconductor wafer, 9... Semiconductor chip, 10... Support sheet, 11... Substrate, 12... Adhesive layer, 13... Film for forming a back surface protective film, 13’... Back surface protective film, 13a... Exposed surface after peeling the release film 151 of the film for forming a back surface protective film, 13b... Exposed surface after peeling the release film 152 of the film for forming a back surface protective film, 14... Workpiece, 14a... Circuit surface of the workpiece, 14b... Back surface of the workpiece, 151... First release film, 152... Second release film, 16... Adhesive layer for jig, 17... Tape for protecting the circuit surface, 18... Fixing jig, 19... Third laminate, 19’... Fourth laminate, 20... Semiconductor device, 21... Semiconductor device with a back surface protective film, 21’... Semiconductor device with a film for forming a back surface protective film, 62... Electronic component, 63... Circuit board, 63a... Terminal formation surface, 64... Encapsulation resin layer

Claims

1. A method for manufacturing a third laminate in which a work, a film for forming a back surface protective film, and a support sheet are laminated in this order, wherein one surface of the work is a rotating surface and the other surface is a back surface, a first lamination step of attaching the film for forming a back surface protective film processed into the shape of the work to the back surface side of the work, and a second lamination step of attaching the support sheet to the film for forming a back surface protective film, are included in this order, during the period from the first lamination step to the second lamination step, the second laminates in which the film for forming a back surface protective film is laminated on the work are conveyed one by one, A method for manufacturing a third laminate, wherein the period from the first lamination step to the second lamination step is performed by connecting an apparatus for attaching the film for forming a back surface protective film and an apparatus for attaching the support sheet, or is performed within the same apparatus.

2. A method for manufacturing a third laminate in which a work, a film for forming a back surface protective film, and a support sheet are laminated in this order, wherein one surface of the work is a rotating surface and the other surface is a back surface, a first lamination step of attaching the film for forming a back surface protective film processed into the shape of the work to the back surface side of the work, and a second lamination step of attaching the support sheet to the film for forming a back surface protective film, are included in this order, the conveyance distance of the work between the attachment start point of the first lamination step and the attachment completion point of the second lamination step is 7000 mm or less, A method for manufacturing a third laminate, wherein the period from the first lamination step to the second lamination step is performed by connecting an apparatus for attaching the film for forming a back surface protective film and an apparatus for attaching the support sheet, or is performed within the same apparatus.

3. A method for manufacturing a third laminate in which a work, a film for forming a back surface protective film, and a support sheet are laminated in this order, wherein one surface of the work is a rotating surface and the other surface is a back surface, a first lamination step of attaching the film for forming a back surface protective film processed into the shape of the work to the back surface side of the work, and a second lamination step of attaching the support sheet to the film for forming a back surface protective film, are included in this order, the conveyance time of the work between the start of attachment of the first lamination step and the completion of attachment of the second lamination step is 400 s or less, A method for manufacturing a third laminate, wherein the process from the first lamination step to the second lamination step is performed by connecting an apparatus for attaching a film for forming a back surface protective film and an apparatus for attaching a support sheet, or is performed within the same apparatus.

4. The method for manufacturing a third laminate according to claim 3, wherein the conveyance time of the workpiece from the start of attachment in the first lamination step to the completion of attachment in the second lamination step is 150 s or less.

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