LIDAR device, autonomous driving vehicle control system, and autonomous driving vehicle

Abstract

To provide a photo detecting and distance measuring apparatus for autonomous vehicle.SOLUTION: A LIDAR device comprises: a first wafer layer (130); a laser assembly (110) arranged on the first wafer layer; a capping layer (111) coupled to the first wafer layer and configured to seal the laser assembly; a second wafer layer (160) at least partially coupled to the first wafer layer; and a photonic integrated circuit (PIC) (150) formed on the second wafer layer, the second wafer including an outlet feature part (169) configured to outcouple a laser beam from the laser assembly.SELECTED DRAWING: Figure 1a

Description

Technical Field

[0001] Cross - Reference to Related Applications This application claims priority to U.S. Regular Application No. 17 / 362,080, filed Jun. 29, 2021, which claims priority to U.S. Provisional Application No. 63 / 046,906, filed Jul. 1, 2020. Applications No. 17 / 362,080 and 63 / 046,906 are hereby incorporated by reference herein.

[0002] The present disclosure generally relates to lasers, particularly Photonics packaging.

Background Art

[0003] Over the past 20 years, there have been significant advancements in silicon photonic devices for a wide range of applications, including communication and detection such as optical interconnects and light detection and ranging (LIDAR). Silicon photonics offers many advantages compared to other photonic technology platforms due to the inherent material properties of silicon. However, despite all its advantages, packaging silicon photonic devices with essential light sources such as lasers and optical amplifiers, along with glass fibers, is very difficult due to the very small optical mode field of single - mode silicon waveguides. Also, related light sources for miniaturization and power consumption limitation are often semiconductor laser diodes and semiconductor optical amplifiers (SOAs) fabricated from compound semiconductor materials, which are preferably packaged in a sealed enclosure.

[0004] It is generally agreed that the packaging cost of silicon photonic products far exceeds the wafer manufacturing cost for producing silicon photonic integrated circuits (PICs), laser diodes (LDs), and SOA chips. Innovation and development are required in the packaging technology of silicon photonic devices.

Summary of the Invention

Means for Solving the Problem

[0005] Embodiments of the present disclosure include a light detection and ranging (LIDAR) device for an autonomous vehicle. The LIDAR device includes a laser assembly layer and a photonic integrated circuit (PIC) layer. The laser assembly layer includes a laser configured to emit laser light. The PIC layer includes a semiconductor optical amplifier (SOA) and a PIC wafer configured to incouple the laser light into the PIC wafer and send the laser light to the SOA.

[0006] In one embodiment, the LIDAR device further includes a wafer layer disposed between the laser assembly layer and the PIC wafer. The laser light is infrared laser light, and the wafer layer is transparent to the infrared laser light.

[0007] In one embodiment, the wafer layer includes a lens configured to receive infrared laser light from the laser assembly layer. The lens is integrated into the wafer layer and configured to focus the infrared laser light onto the input grating of the PIC wafer.

[0008] In one embodiment, the wafer layer includes a laser carrier wafer and an SOA cap wafer. The laser is coupled to the laser carrier wafer. The SOA cap wafer seals the SOA from the environment of the LIDAR device, and the SOA cap wafer is disposed between the PIC wafer and the laser carrier wafer.

[0009] In one embodiment, the wafer layer and the PIC wafer are formed of single crystal silicon.

[0010] In one embodiment, the wafer layer seals the SOA from the environment of the LIDAR device, and the laser is coupled to the wafer layer.

[0011] In one embodiment, the PIC wafer includes a lens configured to receive laser light from a laser assembly hierarchy, the lens being integrated with the PIC wafer and configured to focus the laser light onto an input grating of the PIC wafer.

[0012] In one embodiment, the PIC wafer includes an output feature integrated with the PIC wafer. The output feature is configured to receive the amplified laser light generated by the SOA and outcouple the amplified laser light from the PIC wafer.

[0013] In one embodiment, the laser assembly hierarchy includes a laser lens disposed between the laser and a mirror of the PIC layer. The laser lens is configured to collimate the laser light emitted from the laser.

[0014] In one embodiment, the SOA is flip-bonded to the PIC wafer.

[0015] In one embodiment, the PIC wafer includes a trench sized to accommodate solder for the SOA and a support pedestal formed in the PIC wafer to mechanically support the SOA and provide a vertical alignment reference.

[0016] In one embodiment, the PIC wafer includes one or more edge couplers configured to receive laser light from an input grating of the PIC wafer. The one or more edge couplers are configured to incouple the laser light into the SOA.

[0017] In one embodiment, the output grating of the PIC wafer is disposed deeper within the PIC wafer than the input grating.

[0018] In one embodiment, the laser assembly hierarchy further includes a capping layer that seals the laser from the environment of the LIDAR device, and a mirror disposed on the inclined wall of the capping layer. The PIC wafer includes an input grating and an output grating. The input grating is configured to couple in the laser light reflected from the mirror and send the laser light to the SOA. The output grating is configured to receive the laser light amplified from the SOA and out-couple the laser light amplified from the PIC wafer.

[0019] Embodiments of the present disclosure include an autonomous vehicle control system that includes a LIDAR device, a photodetector, and one or more processors. The LIDAR device includes a laser assembly hierarchy and a PIC hierarchy. The laser assembly hierarchy includes an infrared laser configured to emit infrared laser light. The PIC hierarchy includes a PIC wafer configured to couple infrared laser light into the PIC wafer and send the infrared laser light to the SOA. The photodetector is configured to receive infrared laser light reflected from an object in the environment of the autonomous vehicle control system that is reflected by the amplified laser light generated by the SOA. The one or more processors control the autonomous vehicle control system in response to a signal generated by the photodetector.

[0020] In one embodiment, the wafer layer is disposed between the laser assembly hierarchy and the PIC wafer. The wafer layer is transparent to infrared laser light.

[0021] In one embodiment, the wafer layer includes a lens configured to receive infrared laser light from the laser assembly hierarchy. The lens is integrated into the wafer layer and configured to focus the infrared laser light onto the input grating of the PIC wafer.

[0022] In one embodiment, the wafer layer includes a laser carrier wafer and an SOA cap wafer. The laser is coupled to the laser carrier wafer. The SOA cap wafer seals the SOA from the environment of the LIDAR device, and the SOA cap wafer is disposed between the PIC wafer and the laser carrier wafer.

[0023] Embodiments of the present disclosure include a LIDAR device, a photodetector, and an autonomous vehicle including one or more processors. The LIDAR device includes a laser assembly layer and a photonic integrated circuit (PIC) layer. The laser assembly layer includes a near-infrared laser configured to emit near-infrared laser light. The PIC layer includes a semiconductor optical amplifier (SOA) and a PIC wafer configured to in-couple the near-infrared laser light to the PIC wafer and send the near-infrared laser light to the SOA. The photodetector is configured to receive the near-infrared laser light reflected from an object in the environment of the autonomous vehicle that reflects the amplified laser light generated by the SOA. The one or more processors control the autonomous vehicle in response to a signal generated by the photodetector.

[0024] In one embodiment, the wafer layer is disposed between the laser assembly layer and the PIC wafer. The wafer layer is transparent to near-infrared laser light.

Brief Description of the Drawings

[0025] Non-limiting and non-exhaustive embodiments of the present invention are described with reference to the following drawings, and like reference numerals indicate like parts throughout the various drawings unless otherwise specified.

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DETAILED DESCRIPTION OF THE INVENTION

[0037] Embodiments of laser and photonics packaging that can be implemented in light detection and ranging (LIDAR) devices and systems are described herein. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the embodiments. However, those of ordinary skill in the relevant art will recognize that the techniques described herein may be practiced without one or more of the specific details, or may be practiced with other methods, components, or materials. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring certain aspects.

[0038] References throughout this specification to "one embodiment" or "an embodiment" mean that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. Thus, appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0039] The automotive industry is currently developing autonomous features for controlling vehicles in certain situations. According to SAE International Standard J3016, there are six levels of autonomy, from level 0 (no autonomy) to level 5 (a vehicle that can be operated without driver input under all conditions). Vehicles with autonomous features utilize sensors to sense the environment in which the vehicle is traveling. Obtaining and processing data from the sensors enables the vehicle to travel through its environment. An autonomous vehicle may include one or more of the disclosed LIDAR devices and systems for sensing its environment.

[0040] Throughout this specification, several technical terms are used. These terms should take their ordinary meanings in the relevant technical field, unless specifically defined herein or clearly otherwise indicated in the context of their use. For the purposes of this disclosure, the term "autonomous vehicle" includes vehicles having autonomous features at any level of autonomy of SAE International Standard J3016.

[0041] In aspects of the present disclosure, visible light can be defined as having a wavelength range of about 380 nm to 700 nm. Invisible light can be defined as light having a wavelength outside the range of visible light, such as ultraviolet and infrared light. Infrared light having a wavelength range of about 700 nm to 1 mm includes near-infrared light. In aspects of the present disclosure, near-infrared light can be defined as having a wavelength range of about 700 nm to 1.6 μm.

[0042] In embodiments of the present disclosure, the term "Transparent" can be defined as having a light transmittance of more than 90%. In some embodiments, the term "Transparent" can be defined as a material having a transmittance of visible light of more than 90%.

[0043] The present disclosure relates to the configuration of a silicon photonic device having an optical amplifier and a semiconductor laser encapsulated using a wafer-level packaging technique with a silicon micro optical bench (MOB). Embodiments of the present disclosure describe the design and assembly processes of a silicon photonic package including not only a silicon photonic integrated circuit (PIC), a laser diode, and a semiconductor optical amplifier (SOA), but also other optoelectronic and micro-optical components such as a photodiode (PD), a focusing lens, an isolator, a prism, and a mirror. The carrier and enclosure of such a package can be a silicon micro bench manufactured using silicon micromachining technology. The assembly process can be performed at the die or wafer level, and hermetic sealing can be achieved by wafer bonding under vacuum or an inert atmosphere. The completed wafer assembly can be diced into individual dies including a PIC, LD, and SOA that are hermetically sealed so as to be integrated with other electronic processing devices after being tested by wafer-level automated testing.

[0044] FIG. 1a shows an apparatus 100 including a laser assembly layer 110 and a PIC layer 150 according to an embodiment of the present disclosure. The apparatus 100 may be included in a LIDAR device and / or system utilized in an autonomous vehicle. The apparatus 100 shows an exemplary photonic package including a silicon PIC wafer 160, one or more laser diodes 123, and an SOA 151. The apparatus 100 may also include additional photodiodes, additional focusing lenses, prisms, mirrors, and / or other optoelectronic and micro components such as beam monitoring, correction, and steering components.

[0045] The laser assembly layer 110 includes a laser 123 configured to emit laser light 191. The laser 123 may be a continuous wave (CW) laser. The laser 123 may be an infrared laser that emits infrared laser light. The laser 123 may be a near-infrared laser that emits near-infrared laser light. In FIG. 1a, the laser assembly layer 110 also includes a photodiode 121, a laser lens 125, and an isolator 127. The laser assembly layer 110 also includes a capping layer 111 that seals the laser 123 (and other components of the laser assembly layer 110) from the environment of the apparatus 100. A mirror 115 is disposed on an inclined wall of the capping layer 111. In some embodiments, the mirror 115 may be an individual component that is not disposed on the inclined wall of the capping layer 111.

[0046] The wafer layer 130 of the device 100 is disposed between the laser assembly layer 110 and the PIC wafer 160 of the PIC layer 150. The wafer layer 130 can be silicon. In one embodiment, the wafer layer 130 is formed of single-crystalline silicon. In particular, silicon is at least partially transparent at infrared wavelengths. Silicon may be considered transparent at some infrared wavelengths. In FIG. 1a, the wafer layer 130 includes a laser carrier wafer 131 and an SOA cap wafer 132. The laser carrier wafer 131 and the SOA cap wafer 132 can be silicon or other semiconductor materials. The laser carrier wafer 131 and the SOA cap wafer 132 can be joined together. The optical components 121, 123, 125 and the isolator 127 can be coupled to the laser carrier wafer 131. The capping layer 111 is supported by the laser carrier wafer 131.

[0047] The wafer layer 130 is configured to seal the SOA 151 from the environment of the device 100. In the particular embodiment of FIG. 1a, the SOA cap wafer 132 is configured to seal the SOA 151 from the environment of the device 100. The SOA cap wafer 132 is disposed between the PIC wafer 160 and the laser carrier wafer 131. The wafer layer 130 includes a focusing lens 133 configured to receive laser light 193 from the laser assembly layer 110 (reflected from the mirror 115 in the illustrated embodiment of FIG. 1a). The focusing lens 133 is integrated into the wafer layer 130. In FIG. 1a, the focusing lens 133 is integrated into the SOA cap wafer 132. The focusing lens 133 is configured to focus the laser light 193 onto the input grating 163 of the PIC wafer 160. The lensing curvature of the focusing lens 133 can be formed by a subtractive process (e.g., plasma etching technology) that forms the focusing lens 133 on the SOA cap wafer 132.

[0048] In one embodiment, the PIC wafer 160 is formed of single-crystalline silicon. The PIC wafer 160 includes an input grating 163 and an output grating 165. The input grating 163 and the output grating 165 can be diffractive optical elements formed of single-crystalline silicon. The input grating 163 is configured to couple the laser light 193 (reflected from the mirror 115) and guide the laser light 193 to the SOA 151 as the coupled laser light 195. The input grating 163 can be formed using surface relief technology. The input grating 163 can be designed to couple (and redirect) light having a specific wavelength and received at a specific angle. The focusing lens 133 can be configured to receive the laser light 193 and illuminate the input grating 163 at a specific angle that increases the efficiency of the input grating 163. The focusing lens 133 can also be configured to illuminate a two-dimensional area of the input grating 163 to increase and / or maximize the coupling efficiency.

[0049] SOA151 receives the laser light 195 that is in-coupled from the input grating 163. The in-coupled laser light 195 is amplified by SOA151 and guided to the output grating 165 as the amplified laser light 197. FIG. 1b shows a somewhat enlarged view of the PIC wafer 160 and SOA151. In FIG. 1b, the in-coupled laser light 195 is indicated by the arrow of the dashed line, and the amplified laser light 197 is indicated by the arrow of the dotted line. In FIG. 1a, the solder 152 fixes the SOA151 to the PIC wafer 160. SOA151 can be flip-chip bonded to the PIC wafer 160. In order to connect the SOA151 to the PIC wafer 160, electrical pads and traces can be formed on the PIC wafer 160. The output grating 165 receives the amplified laser light 197 from the SOA151 and out-couples the amplified laser light 197 from the PIC wafer 160. As shown in FIG. 1a, the output grating 165 generates the output light 198. The exit feature 169 receives the amplified laser light and out-couples the amplified laser light from the PIC wafer 160 as the output light 199. In the specific embodiment of FIG. 1a, the exit feature 169 receives the laser light 197 amplified through the output grating 165 as the output light 198. The exit feature 169 may be integrated into the PIC wafer 160 and may be designed to guide the output light 199 at a specific design angle to other devices (not shown). In the specific embodiment of FIG. 1a, the exit feature 169 is a prism structure that can be formed by a subtractive process (e.g., chemical etching technology) of the PIC wafer 160.

[0050] During operation, the laser 123 emits a laser beam 191. The laser lens 125 can collimate the laser beam. The laser lens 125 is disposed between the laser 123 and the mirror 115. In a particular embodiment of FIG. 1a, the laser lens 125 is disposed between the isolator 127 and the laser 123. The isolator 127 receives the laser beam 191 from the laser lens 125. The isolator 127 optically isolates the laser 123 from the optical elements following the isolator 127 in the optical system. For example, the isolator 127 prevents the laser beam from being reflected back to the laser 123 by the mirror 115. The mirror 115 receives the laser beam from the isolator 127 and reflects the laser beam as the laser beam 193 to the lens 133. The laser beam 193 is an infrared laser beam, and since silicon is at least partially transparent to infrared, the laser beam 193 propagates to the focusing lens 133. The focusing lens 133 focuses the laser beam 193 onto the input grating 163, and the input grating 163 couples the laser beam 193 into the PIC wafer 160 as the coupled laser beam 195.

[0051] The coupled laser light 195 can propagate to the SOA 151 restricted by a waveguide (not specifically shown) formed on the PIC wafer 160. The PIC wafer 160 can include an edge coupler (not specifically shown in FIG. 1a) that can receive the coupled laser light 195 and facilitate coupling the laser light 195 to one or more inputs of the SOA 151. The SOA 151 amplifies the coupled laser light 195 and outputs the amplified laser light 197. The PIC wafer 160 can include an edge coupler (not specifically shown in FIG. 1a) that can facilitate outputting the amplified laser light 197 to the PIC wafer 160. The amplified laser light 197 can propagate to the output grating 165 restricted by a waveguide (not specifically shown) formed on the PIC wafer 160. The output grating 165 receives the amplified laser light 197 and re-directs the light as output light 198. The exit feature 169 receives the output light 198 and out-couples the light as output light 199.

[0052] FIG. 2 shows an apparatus 200 including a laser assembly layer 110 according to an embodiment of the present disclosure and a PIC layer 250 including an exit lens 271 as an exit feature of the PIC wafer 260. A partial structure of the apparatus 200 is the same as that of the apparatus 100, but the exit feature of the PIC wafer 260 is the exit lens 271 instead of a prism. The exit lens 271 is integrated with the PIC wafer 260. The lensing curvature of the exit lens 271 can be formed by a subtractive process (e.g., plasma etching technology) that forms the exit lens 271 on the PIC wafer 260. The lensing curvature can be spherical or aspherical and can be configured to output the output light 299 at a specific angle.

[0053] FIG. 3 shows an apparatus 300 including a wafer layer 330 that includes a focusing lens 333 included in a laser carrier wafer 331 of a laser assembly hierarchy 110 and a wafer layer 330 according to an embodiment of the present disclosure. A partial structure of the apparatus 300 is the same as that of the apparatus 100, but instead of the focusing lens 133 being integrated into the SOA cap wafer 132 as shown in FIG. 1a, the focusing lens 333 is integrated into the laser carrier wafer 331. In FIG. 3, the focusing lens 333 is formed in the laser carrier wafer 331, and a corresponding void 339 is formed in the SOA cap wafer 332 to accommodate the focusing lens 333 protruding into the SOA cap wafer 332. The lensing curvature of the focusing lens 333 can be formed by a subtractive process (e.g., plasma etching technology) that forms the focusing lens 333 in the laser carrier wafer 331. The lensing curvature may be spherical or aspherical and may be configured to focus the laser light 193 onto the input grating 163 at a specific angle.

[0054] FIG. 4 shows an apparatus 400 including a focusing lens 433 included in a PIC wafer 460 of a laser assembly hierarchy 110 and a PIC layer 450 according to an embodiment of the present disclosure. A partial structure of the apparatus 400 is the same as that of the apparatus 100, but instead of the focusing lens 133 being integrated into the SOA cap wafer 132 as shown in FIG. 1a, the focusing lens 433 is integrated into the PIC wafer 460. In FIG. 4, the focusing lens 433 is formed in the PIC wafer 460, and a corresponding void 439 is formed in the SOA cap wafer 432 to accommodate the focusing lens 433 protruding into the SOA cap wafer 432. The lensing curvature of the focusing lens 433 can be formed by a subtractive process (e.g., plasma etching technology) that forms the focusing lens 433 in the PIC wafer 460. The lensing curvature may be spherical or aspherical and may be configured to focus the laser light 193 onto the input grating 163 at a specific angle.

[0055] FIG. 5 shows an apparatus 500 including a focusing lens 533 included in an integrated wafer 531 of a laser assembly hierarchy 110 and a wafer layer 530 according to an embodiment of the present disclosure. The integrated wafer 531 functions as both a laser carrier wafer and an SOA cap layer. The wafer layer 530 may be formed of a continuous layer of silicon. In FIG. 5, the focusing lens 533 is formed of the integrated wafer 531. The lensing curvature of the focusing lens 533 may be formed by a subtractive process (e.g., plasma etching technology) that forms the focusing lens 533 in the integrated wafer 531. The lensing curvature may be spherical or aspherical and is configured to focus the laser light 193 onto the input grating 163 at a specific angle.

[0056] FIG. 6 shows a side view and a plan view of an optical structure 601 for manufacturing a laser and a photonics device according to an embodiment of the present disclosure. The left side of FIG. 6 shows a side view of the optical structure 601 including a laser carrier wafer 131. The right side of FIG. 6 shows a plan view of the optical structure 601 including a temperature sensor 640 and an under-bump metal (UBM) pad 642. Metal traces and pads may be formed on the laser carrier wafer 131 to facilitate supplying power to the device and transmitting and receiving electrical signals. The solder trace serves to hermetically seal the electrical and / or optical components from the environment of the device being manufactured by surrounding or enclosing the traces and pads for the electrical and / or optical components. The manufacture of the optical structure 601 may include manufacturing a laser carrier wafer having thin film structures such as a temperature sensor 640, a metal film stack for soldering, and electrical traces for power supply and device monitoring.

[0057] FIG. 7 shows a side view and a plan view of an optical structure 701 for manufacturing a laser and a photonic device according to an embodiment of the present disclosure. The left side of FIG. 7 shows a side view of the optical structure 701 having a photodiode 121 and a laser 123 coupled to a laser carrier wafer 131. The photodiode 121 and the laser 123 can be wire-bonded with gold wires to electrical pads formed on the laser carrier wafer 131. The right side of FIG. 7 shows a plan view of the optical structure 701 including the photodiode 121 and the laser 123 wire-bonded to electrical pads formed on the laser carrier wafer 131.

[0058] FIG. 8 shows a side view and a plan view of an optical structure 801 for manufacturing a laser and a photonic device according to an embodiment of the present disclosure. The left side of FIG. 8 shows a side view of the optical structure 801 having a photodiode 121, a laser 123, a laser lens 125, and an isolator 127 coupled to a laser carrier wafer 131. The laser lens 125 and the isolator 127 can be regarded as passive photonic devices. Collimation and alignment of the laser beam can be achieved by active alignment during the assembly process. The laser 123 emits a laser beam 191, and the laser lens 125 collimates the laser beam 191 into a collimated laser beam. The right side of FIG. 8 shows a plan view of the optical structure 801.

[0059] FIG. 9 shows a side view and a top view of an optical structure 901 for manufacturing a laser and photonic device according to an embodiment of the present disclosure. The left side of FIG. 9 shows a side view of the optical structure 901 having a capping layer 111 that caps and seals the electrical and optical components of the optical structure 801. The capping process of FIG. 9 can be performed in a vacuum or an inert atmosphere to provide hermetic sealing of the laser. The capping layer 111 also includes a built-in mirror 115 that re-directs the laser light towards the PIC layer (not shown in FIG. 9). The right side of FIG. 9 shows a top view of the optical structure 901. The capping layer 111 can be sized to match the solder trace to seal the electrical and optical components included in the optical structure 901.

[0060] FIG. 10 shows a side view and a top view of an optical structure 1001 including an exemplary PIC wafer 1060 according to an embodiment of the present disclosure. The left side of FIG. 10 (side view of the optical structure 1001) shows that deep trenches 1064 and pedestals 1066 can be formed in the PIC wafer 1060 to accommodate (and align) the SOA 151. The deep trenches 1064 are configured to accommodate solder to electrically couple the SOA 151 to the traces / pads of the PIC wafer 1060. The pedestals 1066 are configured to assist in the vertical alignment of the laser beam propagating between the SOA 151 and the PIC wafer 1060. The PIC wafer 1060 can also include built-in prisms and / or lenses formed in the PIC wafer 1060 to steer the laser light. The side view of the optical structure 1001 shows that, in some embodiments, the output grating 1065 can be disposed deeper in the PIC wafer 1060 than the input grating 1063. The laser light propagates between the PIC wafer 1060 and the SOA 151 (added in FIG. 12) via the edge coupler 1068. The right side of FIG. 10 shows a top view of the optical structure 1001.

[0061] FIG. 11 shows a side view and a plan view of an optical structure 1101 including solder balls formed in the deep trenches 1064 of the PIC wafer 1060 according to an embodiment of the present disclosure. The solder balls can be injected (bumped) into the deep trenches 1064 and pressed (coined) to lower the height of the old balls below the height of the support base 1066.

[0062] FIG. 12 shows a side view and a plan view of an optical structure 1201 including bonding an SOA 151 to a PIC wafer 1060 according to an embodiment of the present disclosure. In some embodiments, the SOA 151 is flip-chip (P side down) bonded to the PIC wafer 1060. The SOA 151 includes input and output ports coupled to the edge coupler 1068 of the PIC wafer 1060 on the same edge. While the vertical alignment is adjusted by the preset height of the support base 1066, the horizontal alignment is achieved by flip-chip bonding. When the solder balls are reflowed by heating, these balls expand upward and contact the metal film on the surface of the SOA 151, thereby soldering the SOA 151 to the PIC wafer 1060.

[0063] FIG. 13 shows a side view and a plan view of an optical structure 1301 including capping the SOA 151 with an SOA capping wafer 132 including a lens 133 according to an embodiment of the present disclosure. The operations shown in FIG. 13 can be performed in a vacuum or an inert atmosphere to provide a hermetic seal of the SOA 151.

[0064] FIG. 14 shows a side view and a plan view of an optical structure 1401 including the optical structures 901, 1301 joined together according to an embodiment of the present disclosure. The joining of the optical structures 901, 1301 can be performed by wafer-to-wafer bonding or die-to-wafer bonding. After the joining process, the wafer can be diced, and known good dies can be picked up for integration with other devices of the system. Electrical connections can be provided by wire bonding or soldering to the TSVs.

[0065] Embodiments of the present disclosure enable the manufacture of silicon photonic packages using a micro-optic bench (MOB) fabricated as a device carrier and enclosure in a silicon substrate. Electrical and / or optical components can be assembled at the wafer level to increase production scale. Also, a cap (e.g., capping layer 111 and / or SOA cap wafer 132) can be used to cap the entire completed assembly on the wafer through a wafer bonding process in a vacuum or inert atmosphere with another cap wafer, which helps to seal the disclosed device from the device environment.

[0066] The unique physical and chemical properties of a single-crystalline silicon wafer are useful for manufacturing packages for silicon photonic components. For example, the transparency of single-crystalline silicon at infrared wavelengths enables the use of the disclosed device in many sensing applications, including optical communications and LIDAR. Also, single-crystalline silicon can be chemically etched to form atomically flat facets at specific angles for mirrors and prisms. Also, single-crystalline silicon can be plasma-etched to form microlenses built into the wafer. Single-crystalline silicon has a very stable oxide as a strong passivation layer, high thermal conductivity, and excellent mechanical strength. As a result, designers can integrate many major functions, such as photonic integrated circuits, micro-optical devices, heat sinks, and mechanical support, into a single silicon wafer, as described in the present disclosure.

[0067] Figure 1a shows a silicon package integrated into a hybrid. One begins by constructing a PIC wafer (e.g., PIC wafer 160) with all the major functions for the target application. On this same wafer, micro-optical components such as mirrors, lenses, and prisms for optical steering can be fabricated. It can also be used as a chip carrier for attaching a laser diode LD or SOA chip with light coupled between the PIC and the light source via an edge or diffraction grating coupler. The LD and SOA are heat-generating elements, and the silicon wafer serves as a heat sink. By adopting a wafer-level packaging approach, designers can utilize well-developed automated wafer test methods to irradiate (Probe) and screen the completed assembly across the wafer and map the known good die (KGD) for later use. Maintaining the assembly on the wafer makes it possible to have an accessible technology for enclosing the wafer bond in a sealed state with the assembly surrounded by a vacuum or inert atmosphere. In fact, multiple multi-functional silicon wafers can be fabricated and bonded together.

[0068] Figures 1a - 5 show different embodiments of a package design that shares a structure including a laser assembly hierarchy, a PIC hierarchy, and a wafer layer disposed between the laser assembly hierarchy and the PIC hierarchy. Figures 6 - 9 show an assembly process for constructing a laser assembly. The assembly process begins with the manufacture of a laser carrier wafer on which various thin film features such as temperature sensors, metal film stacks for soldering, and metal traces for electrical connections are provided. The designer may also include silicon through vias (TSVs) (not shown) for electrical connections. On this carrier, the designer can first attach active devices such as LDs by soldering, as these devices are power intensive and have heat dissipation advantages. If there are no TSVs to electrically connect these devices, wire bonding is performed. Next, passive components such as lenses and isolators can be attached with a UV adhesive in an active alignment process so that they are accurately positioned. This assembly process can be applied to die - level and wafer - level assembly. Wafer - level assembly can enable automated testing and hermetic sealing. In the wafer - level assembly process, soldering can be performed with local heating to prevent interference from any pre - attached solder at adjacent sites. After the assembly is complete and the wafer is hermetically capped, wafer testing can be performed, and KGD can be diced for later use.

[0069] Figures 10 to 13 show the assembly process for attaching the SOA chip to the PIC wafer. The PIC wafer (e.g., PIC wafer 1060) provides a deep trench (e.g., trench 1064) for accommodating solder and a support pedestal (e.g., support pedestal 1066) for mechanically supporting the SOA151 and providing a vertical alignment reference. Using solder balls enables introduction by laser jetting or screening. The solder can also be electroplated at the bottom of the trench and reflowed to form balls. The volume and shape of the solder deposit can be determined to meet the following two conditions. (1) The solder must not touch the SOA when the SOA is placed on the support pedestal. (2) The solder must expand and rise to form a connection by contacting the SOA151 during reflow. A practical approach is to make the diameter of the under bump metal (UBM) pad smaller than the solder ball that lands on it and press the solder ball flat (the so-called "Coining" process). This technique can make the height of the solder lower than the support pedestal. During heating, the solder will gather on the UBM pad, and the solder will cause the ball to rise to reach the SOA due to the limited pad area. This arrangement is done to ensure accurate alignment by avoiding placing the SOA directly above the solder before reflow, which may cause some slippage of the SOA when the solder melts. Other features of the PIC wafer may include input / output gratings and edge couplers, prisms / lenses for optical steering, and wire bonding pads for electrical connections.

[0070] In the embodiments shown in FIGS. 10 to 13, light is input / output to / from inside / outside the PIC via a diffraction grating coupler, and the light moves between the PIC and the SOA via an edge coupler. Therefore, the SOA and the PIC are assembled so as to enable direct coupling (butt coupling), which may require an exact placement of the SOA with respect to the edge coupler of the PIC. For this purpose, while accurately adjusting the height of the support base to provide proper vertical alignment, the horizontal alignment can be managed using a high-precision flip-chip bonder. That is, the assembly process can be applied to die-level or wafer-level assembly. Wafer-level assembly may enable automated testing and hermetic sealing. In the wafer-level assembly process, soldering can be performed with local heating to prevent any preattachment of solder to adjacent sites. After the assembly is completed and the wafer is capped in an airtight state, wafer testing can be performed to map KGD.

[0071] FIG. 14 shows the final assembly operation of attaching the laser unit to the SOA / PIC unit. This can be achieved by wafer-to-wafer or die-to-wafer bonding. It can be provided by two-stage wire bonding as shown with electrical connections or soldering to TSVs (not specifically shown).

[0072] FIG. 15a shows an exemplary autonomous vehicle 1500 that may include the LIDAR designs of FIGS. 1a - 14 according to aspects of the present disclosure. The illustrated autonomous vehicle 1500 includes an array of sensors configured to capture one or more objects in the external environment of the autonomous vehicle and generate sensor data related to the one or more objects captured for the purpose of controlling the operation of the autonomous vehicle 1500. FIG. 15a shows sensors 1533A, 1533B, 1533C, 1533D, 1533E. FIG. 15b shows a top view of the autonomous vehicle 1500 including sensors 1533F, 1533G, 1533H, 1533I in addition to sensors 1533A, 1533B, 1533C, 1533D, 1533E. Any of sensors 1533A, 1533B, 1533C, 1533D, 1533E, 1533F, 1533G, 1533H and / or 1533I may include a LIDAR device including the design of FIGS. 1a - 14. FIG. 15c shows a block diagram of an exemplary system 1599 for the autonomous vehicle 1500. For example, the autonomous vehicle 1500 may include a powertrain 1502 including a prime mover 1504 powered by an energy source 1506 and capable of providing power to a drive train 1508. The autonomous vehicle 1500 may further include a control system 1510 including a direction control device 1512, a powertrain control device 1514, and a brake control device 1516. The autonomous vehicle 1500 can be embodied as any number of different vehicles including vehicles that can transport people and / or cargo and move in a variety of different environments. It will be understood that the foregoing components 1502 - 1516 can vary significantly depending on the type of vehicle in which these components are utilized.

[0073] The embodiments described below focus, for example, on wheeled land vehicles such as passenger cars, vans, trucks or buses. In such embodiments, the prime mover 1504 may include one or more electric motors and / or internal combustion engines. The energy source may include, for example, a fuel system (e.g., providing gasoline, diesel, hydrogen), a battery system, a solar panel, or other renewable energy sources, and / or a fuel cell system. The drive train 1508 may include wheels and / or tires, along with a transmission and / or any other mechanical drive components suitable for converting the output of the prime mover 1504 into the motion of the vehicle, as well as one or more brakes configured to controllably stop or decelerate the autonomous vehicle 1500 or a direction or steering component suitable for controlling the trajectory of the autonomous vehicle 1500 (e.g., a rack and pinion steering linkage that allows one or more wheels of the autonomous vehicle 1500 to pivot about a substantially vertical axis to change the angle of the rotational plane of the wheel relative to the longitudinal axis of the vehicle). In some embodiments, a combination of a power train and an energy source can be used (e.g., in the case of an electric / gas hybrid vehicle). In some embodiments, multiple electric motors (e.g., dedicated to individual wheels or axles) can be used as the prime mover.

[0074] The direction control device 1512 may include one or more actuators and / or sensors for receiving and controlling feedback from the direction or steering components so that the autonomous vehicle 1500 can follow the desired trajectory. The power train control device 1514 may be configured to control the output of the power train 1502, for example, to control the output power of the prime mover 1504 and to control the gears of the transmission in the drive train 1508, whereby the speed and / or direction of the autonomous vehicle 1500 can be controlled. The brake control device 1516 may be configured to control one or more brakes that decelerate or stop the autonomous vehicle 1500, for example, disc or drum brakes coupled to the wheels of the vehicle.

[0075] As will be understood by those of ordinary skill having the benefit of this disclosure, other vehicle types, including but not limited to off-road vehicles, all-terrain vehicles, or rail vehicles or construction equipment, will necessarily use different power trains, drive trains, energy sources, direction control devices, power train control devices, and brake control devices. Further, in some embodiments, for example, some components may be combined where the direction control of the vehicle is primarily handled by changing the output of one or more prime movers. Accordingly, the embodiments disclosed herein are not limited to the specific application of the technology described herein in autonomous wheeled land vehicles.

[0076] In the illustrated embodiment, the autonomous control for the autonomous vehicle 1500 may be implemented in a vehicle control system 1520 that includes one or more processors and one or more memories 1524 within the processing logic 1522, along with the processing logic 1522 configured to execute program code (e.g., instruction words 1526) stored in the memory 1524. The processing logic 1522 may include, for example, one or more graphics processing units (GPUs) and / or one or more central processing units (CPUs).

[0077] Sensors 1533A to 1533I may include various sensors suitable for collecting data from the surrounding environment of the autonomous vehicle to be used for controlling the operation of the autonomous vehicle. For example, sensors 1533A to 1533I may include a RADAR unit 1534, a LIDAR unit 1536, and a 3D positioning sensor 1538 which is a satellite navigation system such as GPS, GLONASS, BeiDou, Galileo, or Compass. The LIDAR designs of FIGS. 1a to 14 may be included in the LIDAR unit 1536. The LIDAR unit 1536 may include, for example, a plurality of LIDAR sensors distributed around the autonomous vehicle 1500. In some embodiments, the 3D positioning sensor 1538 may use satellite signals to determine the position of the vehicle on the earth. Sensors 1533A to 1533I may optionally include one or more ultrasonic sensors, one or more cameras 1540, and / or an Inertial Measurement Unit (IMU) 1542. In some embodiments, the camera 1540 may be a monographic or stereographic camera and may be able to record still images and / or videos. The camera 1540 may include a CMOS (Complementary Metal-Oxide-Semiconductor) image sensor configured to capture images of one or more objects in the external environment of the autonomous vehicle 1500. The IMU 1542 may include a plurality of gyroscopes and accelerometers capable of detecting the linear and rotational motion of the autonomous vehicle 1500 in three directions. One or more encoders (not shown) such as wheel encoders can be used to monitor the rotation of one or more wheels of the autonomous vehicle 1500.

[0078] The outputs of sensors 1533A through 1533I can be provided to a control subsystem 1550 that includes a localization subsystem 1552, a trajectory subsystem 1556, a perception subsystem 1554, and a control system interface 1558. The localization subsystem 1552 is configured to determine the position and orientation (or “pose”) of the autonomous vehicle 1500 within its surrounding environment and generally within a particular geographic area. The position of the autonomous vehicle can be compared to the positions of additional vehicles within the same environment as part of generating labeled autonomous vehicle data. The perception subsystem 1554 can be configured to detect, track, classify, and / or determine objects within the environment surrounding the autonomous vehicle 1500. The trajectory subsystem 1556 is configured to generate a trajectory for the autonomous vehicle 1500 over a particular time frame, taking into account objects that are stationary and moving within the environment as well as a desired destination. A machine learning model according to some embodiments can be utilized to generate the vehicle trajectory. The control system interface 1558 is configured to communicate with a control system 1510 to implement the trajectory of the autonomous vehicle 1500. In some embodiments, a machine learning model can be utilized to control the autonomous vehicle to implement the planned trajectory.

[0079] The vehicle control system 1520 can be configured to control the power train 1502 of the autonomous vehicle 1500 in response to signals generated by a photodetector included in the sensor 1533. One or more photodetectors (e.g., a photodiode or an image sensor) can be configured to receive infrared laser light reflected from a target (e.g., an object) in the environment of the autonomous vehicle control system that reflects the amplified laser light generated by the SOA 151 and outcoupled from the device as output light 199. The photodetector can be included in one or more LIDAR units 1536, and the devices disclosed in FIGS. 1a to 14 can also be included in one or more LIDAR units 1536. The vehicle control system 1520 can be configured to control the power train 1502 of the autonomous vehicle 1500 in response to outputs from the plurality of LIDAR sensors 1536.

[0080] The set of components shown in FIG. 15c for the vehicle control system 1520 is to be understood as being merely exemplary in nature. Individual sensors may be omitted in some embodiments. In some embodiments, the different types of sensors shown in FIG. 15c can be used for redundancy and / or to cover other areas within the environment surrounding the autonomous vehicle. In some embodiments, different types and / or combinations of control subsystems can be used. Also, although subsystems 1552-1558 are shown as being separate from processing logic 1522 and memory 1524, in some embodiments, some or all of the functions of subsystems 1552-1558 reside in memory 1524 and can be embodied by program code such as instruction words 1526 performed by processing logic 1522, and it will be understood that such subsystems 1552-1558 can, in some cases, be embodied using the same processor and / or memory. In some embodiments, the subsystems can be embodied using various dedicated circuit logics, various processors, various field programmable gate arrays (FPGAs), various application specific integrated circuits (ASICs), various real-time controllers, etc., and as described above, multiple subsystems can utilize circuits, processors, sensors, and / or other components. Also, the various components of vehicle control system 1520 can be networked in various ways.

[0081] In some embodiments, a number of different architectures, including various combinations of software, hardware, circuit logic, sensors, and networks, can be used to implement the various components shown in FIG. 15c. Each processor can be implemented, for example, as a microprocessor, and each memory can represent a random access memory (RAM) device that includes a main memory and any auxiliary levels of memory - for example, cache memory, non-volatile or backup memory (e.g., programmable or flash memory), and read-only memory. Also, each memory can be considered to include any storage capacity used as a memory storage device located elsewhere in the autonomous vehicle 1500 physically, such as cache memory within the processor, and virtual memory stored, for example, in a mass storage device or other computer controller. The processing logic 1522 shown in FIG. 15c or completely separate processing logic can be used, for example, to control an entertainment system and implement additional features of the autonomous vehicle 1500 that are outside the purpose of autonomous driving control, such as operating doors, lighting, or convenience features.

[0082] Furthermore, for additional storage, the autonomous vehicle 1500 can also include one or more mass storage devices, such as, in particular, removable disk drives, hard disk drives, direct access storage devices (DASD), optical drives (e.g., CD drives, DVD drives, etc.), solid state storage drives (SSD), network-connected storage devices, storage area networks, and / or tape drives. Also, the autonomous vehicle 1500 can include a user interface 1564, such as, for example, one or more displays, touchscreens, voice and / or gesture interfaces, buttons, and other tactile control devices, that enable the autonomous vehicle 1500 to receive multiple inputs from passengers and generate outputs about the passengers. In some embodiments, the input from the passengers can be received via other computers or electronic devices, such as apps or web interfaces of mobile devices.

[0083] In some embodiments, the autonomous vehicle 1500 includes one or more network interfaces, such as a network interface 1562 suitable for communication with one or more networks 1570 (e.g., in particular, a local area network (LAN), a wide area network (WAN), a wireless network, and / or the Internet), and allows information communication with other computers and electronic devices, such as a central service, e.g., a cloud service, from which the autonomous vehicle 1500 receives the environment and other data used for its autonomous driving control. In some embodiments, the data collected by one or more sensors 1533A-1533I can be uploaded to the computing system 1572 via the network 1570 for additional processing. In such embodiments, a timestamp can be associated with each instance of the vehicle data before upload.

[0084] The processing logic 1522 shown in FIG. 15c and the various additional controllers and subsystems disclosed herein generally operate under the control of an operating system and execute or depend on various computer software applications, components, programs, objects, modules, or data structures, as will be described in more detail below. Further, various applications, components, programs, objects, or modules can also be executed by one or more processors of other computers coupled to the autonomous vehicle 1500 via the network 1570, e.g., in a distributed, cloud-based, or client-server computing environment, so that the processing required to implement the functions of the computer program is allocated to multiple computers and / or services via the network.

[0085] Whether embodied as part of an operating system or as a particular application, component, program, object, module, or sequence of instructions, or a subset thereof, the routines executed to implement the various embodiments described herein are hereby called "program code." Program code typically resides at various times in various memories and storage devices and, when read and executed by one or more processors, performs the steps necessary to execute the steps or elements that implement the various aspects of the present disclosure. Further, while the embodiments are described in the context of fully functional computers and systems, it will be understood that the various embodiments described herein can be distributed as a variety of forms of program products and that the embodiments can be implemented independently of the particular type of computer-readable medium used to actually carry out such distribution. Examples of computer-readable media include tangible non-transitory media such as, but not limited to, volatile and non-volatile memory devices, floppy disks and other removable disks, solid state drives, hard disk drives, magnetic tape, and optical disks (e.g., CD-ROM, DVD, etc.).

[0086] Also, the various program codes described below can be identified based on the application in which they are embodied in a particular embodiment. However, any particular program nomenclature below is used merely for convenience, and thus, it should be understood that the present invention should not be limited to use only in any particular application identified and / or implied by such nomenclature. Further, considering the typically infinite number of ways in which a computer program can be structured into routines, procedures, methods, modules, objects, etc. and the various ways in which program functions are allocated among the various software layers (e.g., operating system, library, API, application, applet, etc.) typically resident in a typical computer, it should be understood that the present invention is not limited to the particular structuring and allocation of program functions described herein.

[0087] Those skilled in the art having the benefit of the present disclosure will recognize that the exemplary environment shown in FIG. 15c is not intended to limit the embodiments disclosed herein. In fact, those skilled in the art will recognize that other alternative hardware and / or software environments can be used without departing from the scope of the embodiments disclosed herein.

[0088] The term "processing logic" (e.g., processing logic 1522) in the present disclosure can include one or more processors, microprocessors, multi-core processors, ASICs, and / or FPGAs to perform the operations disclosed herein. In some embodiments, a memory (not shown) is integrated with the processing logic to store the instruction words for performing the operations and / or storing data. Also, the processing logic can include analog or digital circuitry for performing the operations according to embodiments of the present disclosure.

[0089] The "memory" or "memories" described in this disclosure may include one or more volatile or non-volatile memory architectures. The "memory" or "memories" can be a removable and non-removable medium embodied in any method or technology for storing information such as computer-readable instruction words, data structures, program modules, or other data. Exemplary memory technologies include RAM, ROM, EEPROM, flash memory, CD-ROM, DVD (Digital Versatile Disk), high-definition multimedia / data storage disks or other optical storage devices, magnetic cassettes, magnetic tapes, magnetic disk storage or other magnetic storage devices or any other non-transmission medium that can be used to store information for access by a computing device.

[0090] The network can include any network or network system, and examples of such network or network system include, but are not limited to, peer-to-peer networks, local area networks (LANs), wide area networks (WANs), public networks such as the Internet, private networks, cellular networks, wireless networks, wired networks, wired / wireless combined networks, and satellite networks.

[0091] The communication channel can include, or be routed by, one or more wired or wireless communications that utilize the IEEE802.11 protocol, SPI (Serial Peripheral Interface), I2C (Inter-Integrated Circuit), USB (Universal Serial Port), CAN (Controller Area Network), cellular data protocol (e.g., 3G, 4G, LTE, 5G), optical communication network, ISP (Internet Service Provider), peer-to-peer network, LAN, WAN, public network (e.g., the "Internet"), private network, satellite network or others.

[0092] The computing device can include a desktop computer, laptop computer, tablet, phablet, smartphone, feature phone, server computer, or others. The server computer can be located remotely in a data center or stored locally.

[0093] The processes described above are described in terms of both computer software and hardware aspects. The described technology can be embodied in a tangible or non-transitory machine (e.g., computer) readable storage medium and can constitute machine executable instructions that cause the machine to perform the described operations when executed by the machine. Additionally, the process can be embodied in hardware such as an ASIC.

[0094] A tangible non-transitory machine readable storage medium includes any mechanism that provides (e.g., stores) information in a form accessible by a machine (e.g., a computer, network device, personal digital assistant, manufacturing tool, any device having one or more processor sets, etc.). For example, the machine readable storage medium includes recordable / non-recordable media (e.g., ROM, RAM, magnetic disk storage media, optical storage media, flash memory devices, etc.).

[0095] The foregoing description of the exemplary embodiments of the invention, including what is described in the abstract, is not intended to be exhaustive or to limit the invention to the precise forms disclosed. Specific embodiments of the invention and examples thereof are described herein for illustrative purposes, but various modifications can be made within the scope of the invention, as will be recognized by those of ordinary skill in the relevant art.

[0096] Such modifications of the invention can be made in light of the foregoing detailed description. The terms used in the following claims should not be construed as limiting the invention to the specific embodiments disclosed herein. Rather, the scope of the invention should be determined entirely by the following claims, which are to be construed in accordance with established principles of claim interpretation.

Claims

Claim 1 A light detection and ranging (LiDAR) device for an autonomous vehicle, comprising: a first wafer layer; a laser assembly disposed on the first wafer layer; a capping layer mechanically coupled to the first wafer layer and configured to encapsulate the laser assembly; a second wafer layer at least partially mechanically coupled to the first wafer layer; a photonic integrated circuit (PIC) formed on the second wafer layer, the PIC including an output grating configured to receive laser light from the laser assembly and output-couple the laser light from the PIC; the second wafer layer including an exit feature configured to receive the laser light via the output grating and redirect the laser light at a specific designed angle; a PIC; A LiDAR device comprising the above. Claim 2 The LiDAR device according to claim 1, wherein the first wafer layer is configured to at least partially encapsulate the PIC. Claim 3 The LiDAR device according to claim 2, wherein the PIC includes a semiconductor optical amplifier (SOA) disposed on the second wafer layer between the second wafer layer and the first wafer layer. Claim 4 The LiDAR device according to claim 3, wherein the PIC includes an input grating configured to input-couple the laser light into the second wafer layer. Claim 5 The LiDAR device according to claim 4, wherein the input grating is optically coupled to the SOA and configured to direct the laser light to the SOA. Claim 6 A focusing lens integrated into the second wafer layer, the focusing lens being configured to focus the laser light onto the input grating at a specific angle. The LiDAR device according to claim 4, further comprising the focusing lens. Claim 7 The LiDAR device according to claim 3, wherein the PIC includes an output grating configured to receive the amplified laser light from the SOA and re-direct the amplified laser light to the exit feature. Claim 8 The LiDAR device according to claim 1, wherein the first wafer layer includes a focusing lens configured to receive the laser light and focus the laser light onto the second wafer layer. Claim 9 The LiDAR device according to claim 8, wherein the first wafer layer includes a laser carrier wafer bonded to a cap wafer. Claim 10 The LIDAR device according to claim 9, wherein the focusing lens is integrated with the cap wafer.

11. The LIDAR device according to claim 9, wherein the focusing lens is integrated with the laser carrier wafer.

12. The LIDAR device according to claim 1, wherein the laser light is infrared laser light, and the first wafer layer is transparent to the infrared laser light.

13. The LIDAR device according to claim 1, wherein the first wafer layer and the second wafer layer are formed of single crystal silicon.

14. The capping layer includes a mirror disposed on an inclined wall of the capping layer, and the mirror is configured to re-direct the laser light from the laser assembly to the second wafer layer.

15. The laser assembly includes a laser, a mirror, and a laser lens disposed between the laser and the mirror, the laser lens being configured to collimate the laser light emitted from the laser. The LIDAR device according to claim 1.

16. The second wafer layer includes a trench sized to accommodate a solder for a semiconductor optical amplifier (SOA), and a support formed in the second wafer layer to mechanically support the SOA and provide a vertical alignment reference. The LIDAR device according to claim 1.

17. An autonomous vehicle control system, comprising a light detection and ranging (LIDAR) device, a photodetector configured to receive laser light reflected from an object in the environment of the autonomous vehicle control system, and one or more processors configured to control the autonomous vehicle control system in response to a signal generated by the photodetector. The LIDAR device includes a first wafer layer, a laser assembly disposed on the first wafer layer, a capping layer mechanically coupled to the first wafer layer and configured to seal the laser assembly, a second wafer layer at least partially mechanically coupled to the first wafer layer, and a photonic integrated circuit (PIC) formed on the second wafer layer. ​ The PIC includes an output grating that receives laser light from the laser assembly and output-couples the laser light from the PIC. The second wafer layer includes an exit feature configured to receive the laser light via the output grating and redirect the laser light at a specific designed angle. A PIC; An autonomous vehicle control system including the same.

18. The autonomous vehicle control system according to claim 17, wherein the first wafer layer is configured to hermetically seal at least a part of the PIC formed on the second wafer layer.

19. The autonomous vehicle control system according to claim 17, wherein the first wafer layer is transparent to the laser light, and the laser light is infrared laser light.

20. An autonomous vehicle, comprising: A light detection and ranging (LiDAR) device; A photodetector configured to receive laser light reflected from an object in the environment of the autonomous vehicle; One or more processors configured to control the autonomous vehicle in response to a signal generated by the photodetector; The LiDAR device includes: A first wafer layer; A laser assembly disposed on the first wafer layer; A capping layer mechanically coupled to the first wafer layer and configured to seal the laser assembly; A second wafer layer at least partially mechanically coupled to the first wafer layer; A photonic integrated circuit (PIC) formed on the second wafer layer, The PIC includes an output grating that receives laser light from the laser assembly and output-couples the laser light from the PIC. The second wafer layer includes an exit feature configured to receive the laser light via the output grating and redirect the laser light at a specific designed angle. A PIC; An autonomous vehicle including the same. ​

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