Active metal brazed substrate and its manufacturing method

Abstract

To provide an active metal brazing substrate with superior binding strength and a method for manufacturing the same.SOLUTION: An active metal layer 2 is formed from an active metal solder and an organic dispersion medium. The active metal solder includes silver, copper, and an active metal. Based on a total weight of the active metal solder being 100 wt.%, an amount of the silver ranges from 10 wt.% to 60 wt.%. A conductive metal layer 3 is disposed with the active metal layer 2 being between a ceramic substrate layer 1 and the conductive metal layer 3. A tensile strength of an active metal brazing substrate ranges from 165 N / cm to 270 N / cm.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to an active metal brazed substrate and a manufacturing method thereof, and more particularly to an active metal brazed substrate having good bonding strength and a manufacturing method thereof. [Background Art]

[0002] Due to the energy conservation and carbon reduction policies of various countries, the global electric vehicle market is developing vigorously. In recent years, major automobile manufacturers have successively launched high-voltage vehicles of 800 Volts, which has rapidly increased the demand for silicon carbide (SiC) ceramic substrate materials. . [Summary of the Invention] [Problems to be Solved by the Invention]

[0003] However, as the requirements for the voltage, frequency, and operating temperature of power components using silicon carbide (SiC) ceramic substrate materials increase, the ceramic substrate materials are increasingly required to have better heat dissipation capabilities and reliability. As the requirements for the voltage, frequency, and operating temperature of power components using silicon carbide (SiC) ceramic substrate materials increase, the ceramic substrate materials are increasingly required to have better heat dissipation capabilities and reliability.

[0004] Conventionally, the widely used direct-bonding-copper (DBC) ceramic substrate is manufactured by the eutectic bonding method, and there is no bonding material between the copper layer and the ceramic substrate.

[0005] However, during high-temperature operation, due to the difference in the coefficient of thermal expansion between the copper layer and the ceramic substrate (such as Al2O3 or AlN), large thermal stresses often occur, which causes the copper layer to peel off from the surface of the ceramic substrate. Therefore, the conventional direct-bonding-copper ceramic substrate has not been able to meet the packaging requirements of high temperature, high power, high heat dissipation, and high reliability.

[0006] The current mainstream substrate materials are gradually shifting from copper direct bonding ceramic substrates to active metal brazing (AMB) substrate materials.

[0007] Common active metal brazing substrate materials usually contain metallic silver. The silver content in active metal brazing substrate materials usually exceeds 50% by weight (weight% concentration), and in some cases, it can even reach 70%. However, when the silver content is high, the cost of active metal brazing ceramic substrate materials increases, and there are concerns about electromigration in the silver within the solder layer.

[0008] Therefore, in order to overcome the above disadvantages, how to reduce the silver content in the solder layer by improving the composition and structure design of the solder layer has become one of the important issues in this technical field.

[0009] In view of the above technical problems and considering the disadvantages of the prior art, the purpose of the present invention is to provide an active metal brazing substrate and its manufacturing method.

Means for Solving the Problems

[0010] In view of the above problems, the present invention has the following configuration.

[0011] 1. In an active metal brazing substrate comprising a ceramic substrate layer, an active metal layer, and a conductive metal layer, the active metal layer is formed from an active metal solder and an organic dispersion medium. The active metal solder contains metallic silver, metallic copper, and an active metal. When the total weight of the active metal solder is 100% by weight, the silver content is 10 - 60% by weight. the conductive metal layer is provided between the ceramic substrate layer and the conductive metal layer with the active metal layer therebetween. the tensile strength of the active metal brazing substrate is 165 N / cm - 270 N / cm An active metal brazing substrate characterized by the above.

[0012] 2. Also, when the total weight of the active metal solder is 100% by weight, the silver metal content is 30 to 50% by weight. The active metal brazed substrate according to 1., characterized in that.

[0013] 3. Also, when the total weight of the active metal solder is 100% by weight, the silver metal content is 10 to 20% by weight. The active metal brazed substrate according to 1. or 2., characterized in that.

[0014] 4. Also, when the total weight of the active metal solder is 100% by weight, the active metal content is 2 to 4% by weight. The active metal brazed substrate according to any one of 1. to 3., characterized in that.

[0015] 5. Also, the active metal is selected from the group consisting of metal titanium, metal zirconium, metal tantalum, metal niobium, metal vanadium, and metal hafnium. The active metal brazed substrate according to any one of 1. to 4., characterized in that.

[0016] 6. Also, the thickness of the active metal layer is 6 microns or more. The active metal brazed substrate according to any one of 1. to 5., characterized in that.

[0017] 7. Also, the thickness of the active metal layer is 18 to 24 microns. The active metal brazed substrate according to 6., characterized in that.

[0018] 8. Also, an active metal solder paste is applied on the ceramic substrate to form an active metal layer on the ceramic substrate. The active metal solder paste contains an active metal solder and an organic dispersion medium. The active metal solder contains silver metal, copper metal, and an active metal. When the total weight of the active metal solder is 100% by weight, the silver metal content is 10 to 60% by weight. A conductive metal layer is provided on the active metal layer, and a brazing process is performed to obtain a brazed substrate of active metal. The tensile strength of the brazed substrate of active metal is 165 N / cm to 270 N / cm. A method for manufacturing a brazed substrate of active metal, characterized by the above.

[0019] 9. Further, when the total weight of the active metal solder is 100% by weight, the content of the metal silver is 30 to 50% by weight, and the brazing temperature in the brazing process is 900 °C to 950 °C. A method for manufacturing a brazed substrate of active metal according to 8., characterized by the above.

[0020] 10. Further, when the total weight of the active metal solder is 100% by weight, the content of the metal silver is 10 to 20% by weight, and the brazing temperature in the brazing process is 1000 °C to 1100 °C. A method for manufacturing a brazed substrate of active metal according to 8. or 9., characterized by the above.

Effect of the Invention

[0021] As a beneficial effect of the present invention, the brazed substrate of active metal and the manufacturing method thereof provided by the present invention can increase the bonding strength between the ceramic substrate layer and the conductive metal layer by the technical features that "the active metal solder contains metal silver, metal copper, and active metal" and "the total weight of the active metal solder is 100% by weight, and the content of the metal silver is 10 to 60% by weight".

Brief Description of the Drawings

[0022]

Figure 1

Figure 2

Mode for Carrying Out the Invention

[0023] To more clearly understand the features and technical content of the present invention, please refer to the following detailed description and drawings related to the present invention. However, the attached drawings are merely illustrative for ease of understanding and do not limit the present invention to the content of the attached drawings.

[0024] The following shows specific examples for explaining the implementation of the "active metal brazed substrate and its manufacturing method" introduced in the present invention. A person skilled in the art can understand the advantages and effects of the present invention from the content described in this specification.

[0025] The present invention may be implemented or applied through other different specific embodiments. Various detailed descriptions in this embodiment can be modified and changed in various ways based on various viewpoints and applications without departing from the concept of the present invention, and the inventions with such modifications and changes are also considered to belong to the technical scope of the present invention. Also, as previously mentioned, the drawings of the present invention are merely schematic diagrams and are not necessarily drawn based on actual dimensions.

[0026] The following embodiments further explain the related technical content of the present invention, but the content described therein is not intended to limit the scope of the present invention. Furthermore, the term "or" used in this embodiment includes any one or a combination of multiple of the related listed items according to the actual situation.

[0027] In order to overcome the difference in the thermal expansion coefficient of the conventional copper direct bonding ceramic substrate and solve the problem that the copper layer is easily peeled off from the ceramic substrate, the present invention provides an active metal brazed substrate.

[0028] In the active metal brazed substrate, by using an active metal solder paste, a good bonding force (binding force) between the copper layer and the ceramic substrate is ensured.

[0029] Therefore, the active metal brazed substrate can be applied to some packaging structures with requirements for high temperature, high power, and high reliability. In this specification, for the convenience of comparison, the bonding strength between the copper layer and the ceramic substrate is quantified as the tensile strength of the active metal brazed substrate.

[0030] Referring to FIG. 1, the active metal brazed substrate of the present invention includes a ceramic substrate layer 1, an active metal layer 2, and a conductive metal layer 3. The active metal layer 2 is provided between the ceramic substrate layer 1 and the conductive metal layer 3, and has the effect of bonding the ceramic substrate layer 1 and the conductive metal layer 3.

[0031] In FIG. 1, the active metal layer 2 and the conductive metal layer 3 are provided only on one side of the ceramic substrate layer 1. However, the active metal brazed substrate of the present invention is not limited thereto. As shown in FIG. 2, the active metal layer 2 and the conductive metal layer 3 can also be provided on both opposite sides of the ceramic substrate layer 1.

[0032] Referring to FIG. 2, the active metal brazed substrate can have a symmetric structure, and the active metal layers 2, 2' and the conductive metal layers 3, 3' are respectively provided on both opposite sides of the ceramic substrate layer 1. In this way, using the active metal brazed substrate, a packaging structure with conductive layers on both sides can be manufactured.

[0033] <Ceramic substrate layer> The ceramic substrate layer 1 can be a silicon nitride (SiN) ceramic substrate, a silicon carbide (SiC) ceramic substrate, an aluminum nitride (AlN) ceramic substrate, or an alumina (Al2O3) ceramic substrate, preferably a silicon-containing ceramic substrate, more preferably a silicon nitride ceramic substrate. Also, the thickness of the ceramic substrate layer 1 can be 100 microns to 1000 microns, but the present invention is not limited thereto.

[0034] <Active metal layer> The active metal layer 2 is formed from an active metal solder and an organic dispersion medium.

[0035] The active metal solder contains metallic silver (Ag), metallic copper (Cu), and an active metal.

[0036] When the total weight of the active metal solder is 100 wt%, the content of metallic silver is 10 - 60 wt%. Therefore, since the active metal solder of the present invention has a low silver content, the material cost of the active metal brazed substrate can be reduced, and the probability of electromigration of metallic silver can also be reduced.

[0037] Specifically, the content of metallic silver may be 15 wt%, 20 wt%, 25 wt%, 30 wt%, 35 wt%, 40 wt%, 45 wt%, 50 wt%, or 55 wt%.

[0038] In a plurality of embodiments, the content of metallic silver is 30 - 50 wt%. In other embodiments, the content of metallic silver is 10 - 20 wt%.

[0039] When the content of metallic silver changes, in order to maintain a good bonding strength between the ceramic substrate layer 1 and the conductive metal layer 3, it is necessary to adjust the content of metallic copper and the active metal, as well as the brazing temperature.

[0040] During the vacuum sintering process, metallic silver diffuses into the conductive metal layer 3 and reacts with copper atoms in the conductive metal layer 3 at the bonding surface (interface) between the active metal layer 2 and the conductive metal layer 3 to form a silver - copper alloy.

[0041] In an exemplary embodiment, when the total weight of the active metal solder is 100 wt%, the content of metallic copper is 30 - 80 wt%, and the content of the active metal is 1 - 10 wt%.

[0042] Specifically, the content of metallic copper may be 35 wt%, 40 wt%, 45 wt%, 50 wt%, 55 wt%, 60 wt%, 65 wt%, 70 wt%, or 75 wt%.

[0043] Specifically, the content of the active metal may be 2 wt%, 4 wt%, 6 wt%, or 8 wt%. When the total weight of the active metal solder is 100 wt%, the content of the active metal is preferably 2-4 wt%.

[0044] It should be noted that the active metal has a low melting point and preferentially forms a molten state during the vacuum sintering process. Therefore, it helps to fill the defects of the ceramic substrate layer 1 or the conductive metal layer 3, and in extreme cases, it may even react with the ceramic substrate layer 1. On the other hand, the addition of the active metal can also reduce the electrical impedance of the active metal layer 2. be achieved.

[0045] Specifically, the active metal is selected from the group consisting of metallic titanium (Ti), metallic zirconium (Zr), metallic tantalum (Ta), metallic niobium (Nb), metallic vanadium (V), and metallic hafnium (Hf).

[0046] During the vacuum sintering process, some of the active metal diffuses to the bonding surface between the active metal layer 2 and the ceramic substrate layer 1, and forms metal silicide or metal nitride with silicon atoms or nitrogen atoms on the ceramic substrate layer 1.

[0047] Similarly, a part of the active metal can also diffuse and react at the bonding surface between the active metal layer 2 and the conductive metal layer 3 to form an alloy. In this way, a good bonding effect can be obtained between the ceramic substrate layer 1 and the conductive metal layer 3.

[0048] In a preferred embodiment, the active metal is metallic titanium. For example, during the vacuum sintering process, after metallic titanium diffuses into the ceramic substrate layer 1, it can combine with silicon atoms or nitrogen atoms to form titanium silicide (TiSi), or titanium nitride (TiN), or titanium disilicate (TiSi2). Also, after metallic titanium diffuses into the conductive metal layer 3, it can form a titanium-copper alloy with the copper atoms of the conductive metal layer 3, but the present invention is not limited thereto.

[0049] In addition, if the thickness of the active metal layer 2 is too thin, the bonding strength between the ceramic substrate layer 1 and the conductive metal layer 3 will decrease. If the thickness of the active metal layer 2 is too thick, the material cost of the active metal layer 2 will be too high, making mass production difficult.

[0050] Therefore, the thickness of the active metal layer 2 is 6 microns or more, and the thickness of the active metal layer 2 is 10 microns to 30 microns. For example, the thickness of the active metal layer 2 may be 12 microns, 14 microns, 16 microns, 18 microns, 20 microns, 22 microns, 24 microns, 26 microns, or 28 microns. It is preferable that the thickness of the active metal layer 2 is 18 microns to 24 microns.

[0051] <Conductive metal layer> The conductive metal layer 3 is provided on the ceramic substrate layer 1 via the active metal layer 2. Specifically, examples of the conductive metal layer 3 include a metal copper foil, a metal aluminum foil, or a copper-aluminum alloy foil. In a preferred embodiment, the conductive metal layer 3 is preferably a metal copper foil.

[0052] In addition, the thickness of the conductive metal layer 3 is 50 μm to 1200 μm, preferably 200 μm to 800 μm, but is not limited thereto.

[0053] <Method for manufacturing an active metal brazed substrate> First, in step S1, an active metal solder paste for forming the active metal layer 2 is prepared.

[0054] The active metal solder paste contains the active metal solder and an organic dispersion medium.

[0055] The active metal solder contains the aforementioned metal silver, metal copper, and the active metal. In this embodiment, the active metal solder is a combination of metal silver powder, metal copper powder, and active metal powder. In other embodiments, the active metal solder may be a combination of at least one of metal silver powder, metal copper powder, and silver-copper alloy powder and the active metal powder.

[0056] As described above, the content of metallic silver in the active metal solder is in the range of 10 to 60% by weight (when the total weight of the active metal solder is 100% by weight).

[0057] The organic dispersion medium can assist in the dispersion of the active metal solder and assist in forming the active metal solder paste to form the active metal layer 2. Specifically, examples of the organic dispersion medium include a paste former, an organic solvent, a thixotropic agent, and the like.

[0058] When the total weight of the organic dispersion medium is 100% by weight, the content of the paste is 20 to 30% by weight, the content of the organic solvent is 50 to 70% by weight, and the content of the thixotropic agent is 1 to 5% by weight.

[0059] For example, the paste former can be selected from the group consisting of silicone oil, white oil, polyvinyl alcohol, acrylic resin, nitrocellulose, ethyl cellulose, dimethyl phthalate, and carboxymethyl cellulose. Preferably, the paste former is ethyl cellulose.

[0060] The organic solvent is a group of glycol ethers that can be selected from the group consisting of ethylene glycol butyl ether acetate, diethylene glycol, triethanolamine, butyl cellosolve, tert-butanol, N,N-dimethylformamide, terpineol, and nonylphenol polyethylene. Preferably, the organic solvent is terpineol or ethylene glycol butyl ether acetate.

[0061] The thixotropic agent can be selected from the group consisting of polyamide wax, hydrogenated castor oil, and polyurea. Preferably, the thixotropic agent is polyamide wax.

[0062] The active metal solder and the organic dispersion medium are mixed at a weight ratio of 70 to 95%: 5 to 30% to form an active metal solder paste having a viscosity of 50 mPa·s to 300 mPa·s. The weight ratio of the active metal solder to the organic dispersion medium is preferably 75% to 90%: 10% to 25%.

[0063] However, the present invention is not limited to the above embodiments as long as it can be easily formed into an active solder by blending it into an active solder paste having a viscosity suitable for applying the active solder powder and the organic component on the ceramic substrate layer 1, and belongs to the technical scope of the present invention as long as it conforms to the spirit of protection of the present invention.

[0064] In step S2, the active metal solder paste can be applied onto the ceramic substrate layer 1 by screen printing, dried at a temperature of 90°C to 110°C for 5 to 15 minutes, and most of the organic solvents in the active metal solder paste are volatilized to form the active metal layer 2.

[0065] In step S3, a conductive metal layer 3 is provided on the active metal layer 2, and a soldering process is performed to fix the conductive metal layer 3 on the ceramic substrate layer 1.

[0066] The soldering process consists of a first-stage heat treatment process and a second-stage heat treatment process that can be performed in a vacuum environment. The temperature condition of the first-stage heat treatment process is 500°C or lower, and the temperature condition of the second-stage heat treatment process is 900°C to 1100°C (soldering temperature range). The temperature of the second-stage heat treatment process is higher than the temperature of the first-stage heat treatment process.

[0067] Specifically, the temperature condition of the first-stage heat treatment process is 300°C to 500°C, and the treatment time is 30 to 60 minutes. The temperature condition of the second-stage heat treatment process is 900°C to 1100°C, and the treatment time is 60 to 240 minutes.

[0068] Also, the heating rate of the above heat treatment program can be, for example, 5°C / min to 30°C / min. The cooling rate after the vacuum high-temperature sintering is completed can be, for example, 2°C / min to 30°C / min.

[0069] It should be noted that in the soldering process, the soldering temperature is adjusted according to the difference in silver content in the active metal layer 2 in order for the active metal soldered substrate to have good tensile strength.

[0070] Specifically, when the content of metallic silver in the active metal layer 2 is 30 - 50 wt%, the soldering temperature in the soldering process can be 900°C - 950°C. When the content of metallic silver in the active metal layer 2 is 10 - 20 wt%, the soldering temperature in the soldering process can be 1000°C - 1100°C.

[0071] In the soldering process, some of the organic dispersion medium evaporates, and the active metal wets the surface of the ceramic substrate layer 1. Then, it reacts with the ceramic substrate layer 1 to enhance the bonding force between the active metal layer 2 and the ceramic substrate layer 1.

[0072] In addition, a micron-scale eutectic reaction occurs at the bonding surface between the active metal and the metal component of the conductive metal layer 3, a strong eutectic structure is formed, and the active metal layer 2 and the conductive metal layer 3 are firmly bonded.

[0073] <Test Examples 1 - 10> In order to compare the effects of the silver content, soldering temperature, and thickness of the active metal layer 2 on the tensile strength of the active metal soldered substrate, based on the above steps S1 - S3, metal soldered substrates of Test Examples 1 - 10 were fabricated.

[0074] In the metal soldered substrates of Test Examples 1 - 10, the ceramic substrate layer 1 is a silicon nitride ceramic substrate, the active metal layer 2 contains metallic silver, metallic copper, and metallic titanium, and the conductive metal layer 3 is a copper metal layer. In these test examples, the content of metallic titanium is controlled to be 1 - 5 wt%. As an example, when the content of metallic titanium is 4 wt%, the rest can be copper.

[0075] For the preparation of the active metal solder paste, ethyl cellulose is used as the paste former, ethylene glycol butyl ether acetate is used as the organic solvent, and polyamide wax is used as the thixotropic agent. When the total weight of the organic dispersion medium is 100% by weight, the organic dispersion medium contains 20 to 30% by weight of the paste former, 50 to 70% by weight of the organic solvent, and 1 to 5% by weight of the thixotropic agent. In this embodiment, the composition of the organic dispersion medium is 30% by weight of the paste, 67% by weight of the organic solvent, and 3% by weight of the thixotropic agent.

[0076] Table 1 shows the specific content of silver in the active metal solder paste (active metal layer 2), the soldering temperature in the soldering process, and the thickness of the active metal layer 2 formed after the soldering process. Also, the tensile strength of the active metal soldered substrate was measured at a temperature of 25°C in accordance with the JIS-C-6481 standard, and the results are shown in Table 1.

[0077]

Table 1

[0078] According to the results in Table 1, it can be seen that when the silver content in the active metal layer is 10 to 60% by weight, the tensile strength of the active metal soldered substrate can be 165 N / cm to 270 N / cm. According to Test Examples 1 to 4, when the silver content in the active metal layer is 20 to 50% by weight, the tensile strength of the active metal soldered substrate can be 180 N / cm to 270 N / cm.

[0079] Even if the thickness of the active metal layer decreases to 18 microns, the active metal soldered substrate can still have a similar effect. According to Test Examples 5 to 7, even when the silver content in the active metal layer is 20 to 50% by weight, the active metal soldered substrate can have a tensile strength of 180 N / cm to 270 N / cm.

[0080] According to the experimental results, when the brazing temperature rises, the tensile strength of the active metal brazed substrate is significantly improved. According to Test Examples 8-9, when the brazing temperature is raised to 1015 °C, even if the silver content in the active metal layer is only 10-20% by weight, the active metal brazed substrate can still have a tensile strength of 140 N / cm to 250 N / cm.

[0081] From the above results, by adjusting the silver content and brazing temperature in the active metal, the active metal brazed substrate of the present invention has good tensile strength and can be applied to a packaging structure that meets the requirements of high temperature, high power, and high reliability.

[0082] [Effects of the present embodiment] One of the advantageous effects of the present invention is that the active metal brazed substrate and its manufacturing method provided by the present invention are "active metal solder containing metallic silver, metallic copper, and active metal", and "when the total weight of the active metal solder is 100% by weight, the silver content of the metallic silver is 10-60% by weight". Since it has the technical characteristics, the bonding strength between the ceramic substrate layer and the conductive metal layer can be improved.

[0083] The content described above is only a preferred embodiment of the present invention and does not limit the technical scope of the present invention. Therefore, all technical changes made with reference to the specification and drawings of the present invention are equivalent to the present invention and are included in the technical scope of the present invention.

Explanation of reference numerals

[0084] 1 Ceramic substrate layer 2, 2' Active metal layer 3, 3' Conductive metal layer

Claims

1. In an active metal brazed substrate comprising a ceramic substrate layer, an active metal layer, and a conductive metal layer, the active metal layer is formed from an active metal solder and an organic dispersion medium, the active metal solder contains metallic silver, metallic copper, and an active metal, and when the total weight of the active metal solder is 100% by weight, the content of the metallic silver is 10 to 45% by weight, the active metal layer is provided between the ceramic substrate layer and the conductive metal layer, the tensile strength of the active metal brazed substrate is 165 N / cm to 270 N / cm An active metal brazed substrate characterized by the above.

2. When the total weight of the active metal solder is 100% by weight, the content of the metallic silver is 30 to 45% by weight An active metal brazed substrate according to claim 1, characterized by the above.

3. When the total weight of the active metal solder is 100% by weight, the content of the metallic silver is 10 to 20% by weight An active metal brazed substrate according to claim 1, characterized by the above.

4. When the total weight of the active metal solder is 100% by weight, the content of the active metal is 2 to 4% by weight An active metal brazed substrate according to claim 1, characterized by the above.

5. The active metal is selected from the group consisting of metallic titanium, metallic zirconium, metallic tantalum, metallic niobium, metallic vanadium, and metallic hafnium An active metal brazed substrate according to claim 1, characterized by the above.

6. The thickness of the active metal layer is 6 microns or more An active metal brazed substrate according to claim 1, characterized by the above.

7. The thickness of the active metal layer is 18 microns to 24 microns An active metal brazed substrate according to claim 6, characterized by the above.

8. Apply an active metal solder paste on a ceramic substrate, form an active metal layer on the ceramic substrate, the active metal solder paste contains an active metal solder and an organic dispersion medium, the active metal solder contains metallic silver, metallic copper, and an active metal, and when the total weight of the active metal solder is 100% by weight, the content of the metallic silver is 10 to 45% by weight, Provide a conductive metal layer on the active metal layer, perform a brazing process to obtain an active metal brazed substrate, and the tensile strength of the active metal brazed substrate is 165 N / cm to 270 N / cm A method for manufacturing an active metal brazed substrate, characterized by the above.

9. Apply an active metal solder paste on a ceramic substrate to form an active metal layer on the ceramic substrate. The active metal solder paste contains an active metal solder and an organic dispersion medium. The active metal solder contains metallic silver, metallic copper, and an active metal. When the total weight of the active metal solder is 100% by weight, the content of the metallic silver is 30 to 50% by weight. Provide a conductive metal layer on the active metal layer and perform a brazing process to obtain a brazed substrate with an active metal. The tensile strength of the brazed substrate with an active metal is 165 N / cm to 270 N / cm. The brazing temperature in the brazing process is 900°C to 950°C. A method for manufacturing a brazed substrate with an active metal, characterized by the above.

10. When the total weight of the active metal solder is 100% by weight, the content of the metallic silver is 10 to 20% by weight, and the brazing temperature in the brazing process is 1000°C to 1100°C. A method for manufacturing a brazed substrate with an active metal according to Claim 8, characterized by the above.

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