Solar cell, method for manufacturing the same, laminated cell, and solar cell module

Abstract

Provided are a solar cell, a method for manufacturing the same, a stacked cell, and a solar cell module, which are advantageous for improving the light absorption rate by a first surface and improving the bifacial factor of the solar cell. 【Solution means】 The solar cell includes a substrate having a first surface including electrode regions and non-electrode regions alternately provided along a first direction, a doped conductive layer located in each electrode region and at least in a partial region of at least one non-electrode region, and a dielectric layer located between the first surface and the doped conductive layer. The first surface facing the doped conductive layer has a first surface structure including a plurality of platform structures, and the remaining first surface has a second surface structure including a plurality of first pyramid structures.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to the field of photovoltaic power generation, and in particular, to solar cells and their manufacturing methods, tandem cells, and solar cell modules.

Background Art

[0002] Current solar cells mainly include IBC cells (Interdigitated Back Contact solar cells), TOPCON (Tunnel Oxide Passivated Contact) cells, PERC cells (Passivated emitter and real cells), and heterojunction solar cells.

[0003] However, current solar cells are limited by the wavelength range of light that can be absorbed and utilized, and there are also limitations in photoelectric conversion efficiency. Moreover, the difference in photoelectric conversion efficiency between the front and back surfaces of the solar cell also affects the overall power generation form of the solar cell. In order to further improve the photoelectric conversion efficiency of solar cells, higher requirements are imposed on the light absorption rate by solar cells and higher requirements are also imposed on the photoelectric conversion efficiency of the front and back surfaces of solar cells.

Summary of the Invention

Problems to be Solved by the Invention

[0004] Embodiments of the present disclosure provide a solar cell and its manufacturing method, a tandem cell, and a solar cell module that are at least advantageous for improving the light absorption rate by the first surface and improving the bifaciality factor of the solar cell.

Means for Solving the Problems

[0005] In some embodiments of the present disclosure, a solar cell according to an aspect of the embodiments of the present disclosure includes a substrate having a first surface including electrode regions and non-electrode regions alternately provided along a first direction, a doped conductive layer located in each of the electrode regions and in a partial region of at least one of the non-electrode regions, and a dielectric layer located between the first surface and the doped conductive layer. The first surface facing the doped conductive layer has a first surface structure including a plurality of platform structures, and the remaining first surface has a second surface structure including a plurality of first pyramid structures.

[0006] In some embodiments, the doped conductive layer is provided only in some of the non-electrode regions among the plurality of non-electrode regions.

[0007] In some embodiments, the doped conductive layer is a plurality of first conductive parts arranged at intervals along the first direction, corresponding to the electrode regions and located in the corresponding electrode regions, and extending along a second direction intersecting the first direction; and at least one second conductive part located in the non-electrode region and having the first conductive parts located in two electrode regions adjacent to the non-electrode region where the second conductive part is provided all in contact with and connected to the second conductive part.

[0008] In some embodiments, the second conductive part corresponds to the non-electrode region.

[0009] In some embodiments, the second conductive part is a plurality of first elongated structures arranged at intervals along the second direction, including a plurality of first elongated structures extending along the first direction so as to be in contact with and connected to adjacent first conductive parts.

[0010] In some embodiments, the second conductive part further includes at least one second elongated structure extending along the second direction.

[0011] In some embodiments, the second conductive part includes a plurality of the second elongated structures that are arranged at intervals along the first direction and intersect a plurality of the first elongated structures so as to form a lattice structure.

[0012] In some embodiments, the first elongated structure has a first width along the second direction, the second elongated structure has a second width along the first direction, and the first conductive part has a third width that is larger than the first width and larger than the second width along the first direction.

[0013] In some embodiments, the lattice structure has a plurality of mesh holes defined by the first elongated structure and the second elongated structure. A first dimension of the mesh holes in the first direction is 100 μm or less, and a second dimension of the mesh holes in the second direction is 5 μm to 200 μm.

[0014] In some embodiments, taking the direction from the doped conductive layer towards the dielectric layer as the third direction, taking a plane perpendicular to the third direction as the projection plane, taking the orthographic projection area of the doped conductive layer located in a partial area of the non-electrode region on the projection plane as the first area, taking the orthographic projection area of the first surface on the projection plane as the second area, and setting the ratio of the first area to the second area to be 5% to 30%.

[0015] In some embodiments, the substrate further has a second surface provided facing away from the first surface, and the second surface has a third surface structure including a plurality of second pyramid structures.

[0016] In some embodiments, a one-dimensional dimension at the bottom of the first pyramid structure is smaller than a one-dimensional dimension at the bottom of the second pyramid structure.

[0017] In some embodiments of the present disclosure, a stacked solar cell according to another aspect of the embodiments of the present disclosure includes a bottom cell that is a solar cell according to any one of the above embodiments, and a top cell located on one side spaced apart from the substrate of the doped conductive layer of the bottom cell.

[0018] In some embodiments of the present disclosure, a method for manufacturing a solar cell according to another aspect of the embodiments of the present disclosure includes the steps of providing an initial substrate having an initial first surface including an initial electrode region and an initial non-electrode region alternately provided along a first direction; forming an initial dielectric layer covering the initial first surface; forming an initial doped conductive layer covering a surface on one side of the initial dielectric layer spaced apart from the initial substrate; processing the initial doped conductive layer located in a partial region of the initial non-electrode region by a laser process; removing the initial doped conductive layer and the initial dielectric layer processed by the laser process by an etching process to form a substrate having a first surface, and the remaining initial dielectric layer located in the electrode region and the non-electrode region is used as a dielectric layer, and the remaining initial doped conductive layer located in the electrode region and the non-electrode region is used as a doped conductive layer, and performing a first texturing process on the exposed initial first surface; the initial electrode region and the initial non-electrode region after the first texturing process are respectively an electrode region and a non-electrode region, the first surface facing the doped conductive layer has a first surface structure including a plurality of platform structures, and the remaining first surface has a second surface structure including a plurality of first pyramid structures.

[0019] In some embodiments, the initial substrate further has an initial second surface provided facing away from the initial first surface, and further includes the step of performing a second texturing process on the initial second surface so that the initial second surface is converted into a second surface before forming the initial dielectric layer, the second surface has a third surface structure including a plurality of second pyramid structures, and a one-dimensional dimension at the bottom of the first pyramid structure is smaller than a one-dimensional dimension at the bottom of the second pyramid structure.

[0020] In some embodiments, in the step of performing the second texturing process on the initial second surface, the second texturing process is further performed on the initial first surface, and the initial first surface has an initial first surface structure including a third pyramid structure.

[0021] In some embodiments, after forming the third pyramid structure and before forming the initial dielectric layer, the method further includes a step of performing a polishing process on the initial first surface so that the third pyramid structure is converted into the platform structure.

[0022] In some embodiments, in the initial doped conductive layer located in the initial non-electrode region, laser action regions arranged at intervals along the second direction, or arranged at intervals along both the first direction and the second direction intersecting the second direction are divided, and the step of processing the initial doped conductive layer located in a partial region of the initial non-electrode region by the laser process includes the step of processing the initial doped conductive layer located in the laser action region by the laser process.

[0023] In some embodiments, the laser employed in the laser process is a picosecond laser with a wavelength of 300 nm to 1000 nm.

[0024] In some embodiments of the present disclosure, a solar cell module according to another aspect of the embodiments of the present disclosure is formed by connecting a plurality of solar cells according to any one of the above embodiments, or by connecting a plurality of stacked cells, or by connecting a plurality of solar cells formed by the manufacturing method according to any one of the above embodiments, and includes a battery string, a sealing adhesive film for covering the surface of the battery string, and a cover plate for covering the surface of the sealing adhesive film spaced apart from the battery string.

Advantages of the Invention

[0025] On one hand, in addition to designing the dielectric layer and the doped conductive layer that are sequentially stacked on the electrode region so that the first passivation contact structure in the electrode region is formed, the dielectric layer and the doped conductive layer that are also sequentially stacked on a partial region of at least one non-electrode region are designed. The partial dielectric layer and the doped conductive layer are used to form the second passivation contact structure in the non-electrode region. The non-electrode region is not only advantageous for reducing the probability of carrier recombination in the non-electrode region through the second passivation contact structure, but also advantageous for transporting and collecting carriers in the non-electrode region and providing them to the electrode region. Thereby, the carrier collection efficiency of the entire first surface is further improved, that is, the carrier loss of the entire first surface is further reduced. In addition, since a partial region of at least one non-electrode region is not blocked by the dielectric layer and the doped conductive layer, a part of the light can be irradiated onto a part of the non-electrode region without passing through the dielectric layer and the doped conductive layer, which is advantageous for improving the light absorption rate by a part of the non-electrode region, and thereby the photoelectric conversion efficiency of the first surface is further improved.

[0026] On the other hand, the first surface facing the doped conductive layer includes the electrode region and a part of the non-electrode region. The doped conductive layer is provided in the part of the non-electrode region. The first surface facing the doped conductive layer has a first surface structure including a plurality of platform structures. In other words, the part of the first surface is a polished structure, and the surface morphology is relatively flat compared with a complete pyramid structure, which is advantageous for improving the uniformity of the dielectric layer and the doped conductive layer formed, so the dielectric layer and the doped conductive layer formed in the electrode region also have a relatively flat form. Thereby, it is advantageous for improving the passivation effect of the dielectric layer and the doped conductive layer on the first surface, and the defect density of the first surface is further reduced.

[0027] In contrast, the remaining first surface, i.e., the first surface not facing the doped conductive layer, has a second surface structure including a plurality of first pyramid structures. Therefore, the probability that light incident on the remaining first surface at different angles is absorbed by the remaining first surface through the first pyramid structures is increased, thereby further improving the light absorption rate of the remaining first surface.

[0028] Therefore, by providing the dielectric layer and the doped conductive layer in both the electrode region and a part of the non-electrode region, designing such that the first surface facing the doped conductive layer has a platform structure and the first surface not facing the doped conductive layer has a first pyramid structure, it is not only advantageous for improving the passivation effect of the dielectric layer and the doped conductive layer on the first surface and reducing the probability of carrier recombination on the first surface, but also advantageous for improving the light absorption rate by the first surface. The cooperation of the two aspects is advantageous for improving the photoelectric conversion efficiency of the first surface, and thereby advantageous for improving the bifaciality factor of the solar cell.

Brief Description of the Drawings

[0029] One or more embodiments are exemplarily illustrated by the figures in the corresponding drawings. These exemplary descriptions do not limit the embodiments. Unless otherwise specified, the figures in the drawings do not limit the proportion. In order to more clearly explain the technical means in the embodiments of the present application or the prior art, the drawings necessary for the embodiments are briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and those skilled in the art can obtain other drawings based on these drawings without creative effort.

[0030]

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Mode for Carrying Out the Invention

[0031] As can be understood from the background art, it is necessary to improve the light absorption rate of the solar cell, and it is necessary to improve the photoelectric conversion efficiency of the front or back surface of the solar cell.

[0032] As can be analyzed, the back surface of most TOPCon cells has a full-surface polished structure. The thickness of the silicon oxide layer located on the back surface of the cell substrate is 1 nm to 2 nm. The main function of the silicon oxide layer is to serve as a tunneling layer for a large number of carriers, and at the same time, perform chemical passivation on the back surface of the substrate to reduce the interface defects on the back surface of the substrate. The main function of the doped polycrystalline silicon layer located on the back surface of the cell substrate is to form a band bending on the back surface of the substrate as an electric field passivation layer, realize the selective transport of carriers on the back surface of the substrate, and reduce the recombination loss of carriers.

[0033] Generally speaking, by covering the entire back surface of the battery using a doped polycrystalline silicon layer with uniform material properties, a good passivation effect and a good carrier transport and collection ability are achieved on the back surface of the battery. However, the doped polycrystalline silicon layer has a strong light absorption rate in the 300nm to 1200nm band, easily absorbs most of the incident light, and significantly reduces the light incident on the back surface of the battery blocked by the doped polycrystalline silicon layer. As a result, the absorption rate of the incident light on the back surface of the battery decreases, which has a significant adverse effect on both the photocurrent generation and the bifaciality factor of the battery.

[0034] Embodiments of the present disclosure provide a solar cell, a method for manufacturing the same, a stacked cell, and a solar cell module. In the solar cell, on the one hand, in addition to designing a dielectric layer and a doped conductive layer that are sequentially stacked in the electrode region, a dielectric layer and a doped conductive layer that are also sequentially stacked are designed in a partial region of at least one non-electrode region. The partial dielectric layer and doped conductive layer are not only advantageous for reducing the probability of carrier recombination in the non-electrode region, but also for transporting and collecting carriers in the non-electrode region and providing them to the electrode region, thereby further improving the carrier collection efficiency of the entire first surface, that is, further reducing the carrier loss of the entire first surface. In addition, since a partial region of at least one non-electrode region is not blocked by the dielectric layer and the doped conductive layer, it is advantageous for improving the light absorption rate of a partial non-electrode region, thereby further improving the photoelectric conversion efficiency of the first surface. On the other hand, the first surface facing the doped conductive layer has a first surface structure including a plurality of platform structures. In other words, the partial first surface is a polished structure, the surface morphology is relatively flat, and it is advantageous for improving the uniformity of the formed dielectric layer and doped conductive layer, so it is advantageous for improving the passivation effect of the dielectric layer and doped conductive layer on the first surface, and further reducing the defect density of the first surface. In contrast, the remaining first surface has a second surface structure including a plurality of first pyramid structures, so the probability that light incident on the remaining first surface at different angles is absorbed by the remaining first surface through the first pyramid structures increases, thereby further improving the light absorption rate of the remaining first surface. Therefore, in the solar cell designed in an embodiment of the present disclosure, it is not only advantageous for improving the passivation effect of the dielectric layer and doped conductive layer on the first surface and reducing the probability of carrier recombination on the first surface, but also advantageous for improving the light absorption rate of the first surface. The cooperation of the two aspects is advantageous for improving the photoelectric conversion efficiency of the first surface, thereby being advantageous for improving the bifaciality factor of the solar cell.

[0035] Hereinafter, each embodiment of the present application will be described in detail with reference to the drawings. Those skilled in the art can understand that in each embodiment of the present application, many technical details are provided to help readers better understand the present application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical means for which protection of the present application is sought can be realized.

[0036] One embodiment of the present disclosure provides a solar cell, and the solar cell according to the embodiment of the present disclosure will be described in detail below in conjunction with the drawings.

[0037] Referring to FIGS. 1 to 3, the solar cell includes a substrate 100 having a first surface 100a including electrode regions 101 and non-electrode regions 102 alternately provided along a first direction X, a doped conductive layer 103 located in each electrode region 101 and at least partially located in a part of at least one non-electrode region 102, and a dielectric layer 104 located between the first surface 100a and the doped conductive layer 103. The first surface 100a facing the doped conductive layer 103 has a first surface structure 110 including a plurality of platform structures 130, and the remaining first surface 100a has a second surface structure 120 including a plurality of first pyramid structures 140.

[0038] Here, FIG. 1 is a schematic diagram of a local cross-sectional structure of a solar cell according to an embodiment of the present disclosure. FIG. 2 is a schematic diagram of an enlarged cross-sectional structure in the square enclosure 1 of FIG. 1. FIG. 3 is a schematic diagram of a first type of local top surface structure of a solar cell according to an embodiment of the present disclosure. Note that FIG. 1 can be regarded as a schematic diagram of a certain cross-sectional structure along a plane orthogonal to the second direction Y of FIG. 3.

[0039] Note that the number of electrode regions 101 and the number of non-electrode regions 102 may both be plural. The electrode regions 101 and the non-electrode regions 102 are alternately provided along the first direction X. In other words, the electrode region 101 may be located within the interval between adjacent non-electrode regions 102, and the non-electrode region 102 may be located within the interval between adjacent electrode regions 101.

[0040] Note that an embodiment of the present disclosure does not limit the number of electrode regions 101 and the number of non-electrode regions 102. Only two electrode regions 101 and three non-electrode regions 102 are shown in FIG. 1. Further, the first surface 100a facing the doped conductive layer 103 refers to the first surface 100a that overlaps with the orthographic projection of the doped conductive layer 103 on the first surface 100a.

[0041] In some cases, referring to FIG. 4, FIG. 4 is a schematic diagram of a second type of local upper surface structure of a solar cell according to an embodiment of the present disclosure. Not all of the non-electrode regions 102 have a doped conductive layer 103. Only some of the non-electrode regions 102 may have a doped conductive layer 103, and only a partial region of the non-electrode region 102 having the doped conductive layer 103 faces the doped conductive layer 103, and the remaining partial region is not blocked by the doped conductive layer 103, which will be described in detail later. In some other cases, referring to FIG. 1 or FIG. 3, a partial region of each non-electrode region 102 has a doped conductive layer 103.

[0042] In any of the above cases, on the one hand, in addition to designing the dielectric layer 104 and the doped conductive layer 103 that are sequentially stacked on the electrode region 101 so that the first passivation contact structure in the electrode region 101 is formed, the dielectric layer 104 and the doped conductive layer 103 that are also sequentially stacked on a partial region of at least one non - electrode region 102 are designed. The partial dielectric layer 104 and doped conductive layer 103 are used to form the second passivation contact structure in the non - electrode region 102. Based on this, the non - electrode region 102 is not only advantageous for reducing the probability of carrier recombination in the non - electrode region 102 through the second passivation contact structure, but also advantageous for transporting and collecting carriers in the non - electrode region 102 and providing them to the electrode region 101. Thereby, the carrier collection efficiency of the entire first surface 100a is further improved, that is, the carrier loss of the entire first surface 100a is further reduced. Also, since at least a partial region of each non - electrode region 102 is not blocked by the dielectric layer 104 and the doped conductive layer 103, part of the light can be irradiated onto a part of the non - electrode region 102 without passing through the dielectric layer 104 and the doped conductive layer 103, which is advantageous for improving the light absorption rate of a part of the non - electrode region 102, and thereby, the photoelectric conversion efficiency of the first surface 100a is further improved.

[0043] Note that whether it is the first passivation contact structure mainly located in the electrode region 101 or the second passivation contact structure located in the non - electrode region 102, both can reduce the carrier recombination on the first surface 100a. However, since they mainly play a passivation effect on the first surface 100a in different regions, it is advantageous for increasing the open - circuit voltage of the solar cell, and thereby, the photoelectric conversion efficiency of the solar cell is improved.

[0044] On the other hand, the first surface 100a facing the doped conductive layer 103 includes an electrode region 101 and a non-electrode region 102 provided with the doped conductive layer 103 on the surface. The partial surface has a first surface structure 110 including a plurality of platform structures 130. In other words, the partial surface is a polished structure, and the surface morphology is relatively flat compared to a complete pyramid structure. Since it is advantageous for improving the uniformity of the dielectric layer 104 and the doped conductive layer 103 formed based on the partial surface, the dielectric layer and the doped conductive layer formed in the electrode region 101 also have a relatively flat form. Thereby, it is advantageous for improving the passivation effect of the dielectric layer 104 and the doped conductive layer 103 with respect to the first surface 100a, and the defect density of the first surface 100a is further reduced. Note that the platform structure 130 can be regarded as the base portion of the pyramid structure, that is, the structure remaining after at least removing the apex of the pyramid structure.

[0045] In contrast, the remaining first surface 100a, that is, the first surface 100a not facing the doped conductive layer 103, has a second surface structure 120 including a plurality of first pyramid structures 140. Therefore, the probability that light incident on the remaining first surface 100a at different angles is absorbed by the remaining first surface 100a through the first pyramid structures 140 increases, whereby the light absorption rate by the remaining first surface 100a is further improved.

[0046] In some cases, the first surface 100a facing the doped conductive layer 103 is a first portion. The first portion includes the electrode region 101 and the non - electrode region 102 where the doped conductive layer 103 is provided on the surface. The first surface 100a not facing the doped conductive layer 103 is a second portion. The second portion has a second surface structure 120 including a plurality of first pyramid structures 140. By providing the dielectric layer 104 and the doped conductive layer 103 on both the first portion, that is, the electrode region and a part of the non - electrode region, and designing so that the first portion has the surface form of the platform structure 130 and the second portion has the surface form of the first pyramid structure 140, it is not only advantageous to improve the passivation effect of the dielectric layer 104 and the doped conductive layer 103 on the entire first surface 100a and reduce the probability of carrier recombination on the entire first surface 100a, but also advantageous to improve the light absorption rate by the entire first surface 100a. By the cooperation of the two modes, it is advantageous to improve the photoelectric conversion efficiency of the entire first surface 100a, thereby being advantageous to improve the bifaciality factor of the solar cell.

[0047] In some embodiments, the electrode region 101 refers to the region of the substrate 100 facing the electrode along the thickness direction of the substrate 100, that is, the third direction Z, or can be understood as the region where the orthographic projection of the electrode on the substrate 100 is located. Also, the non - electrode region 102 refers to the region of the substrate 100 not facing the electrode, or can be understood as the region where the orthographic projection of the region other than the electrode on the substrate 100 is located. In actual application, the orthographic projection area of the electrode region 101 on the substrate 100 can be equal to or larger than the orthographic projection area of the electrode on the substrate 100, and it is advantageous to ensure that all regions where the electrode contacts the substrate 100 are the electrode region 101. Note that all the above - mentioned electrodes are electrodes facing the first surface 100a of the substrate 100 as described later. In some subsequent embodiments, the electrode facing the first surface 100a of the substrate 100 is the first electrode.

[0048] An embodiment of the present disclosure will be described in more detail below in conjunction with the drawings.

[0049] In some embodiments, referring to FIG. 1, the substrate 100 further has a second surface 100b provided facing away from the first surface 100a. In some cases, the first surface 100a may be the back surface of the solar cell, and the second surface 100b may be the surface of the solar cell.

[0050] In some embodiments, the solar cell may be a TOPCon cell. The dielectric layer 104 and the doped conductive layer 103 are provided not only in the electrode region 101 but also in some non - electrode regions 102. Further, the first surface 100a facing the doped conductive layer 103 has a first surface structure 110 including a plurality of platform structures 130, and the first surface 100a not facing the doped conductive layer 103 has a second surface structure 120 including a plurality of first pyramid structures 140. Therefore, the short - circuit current of the solar cell can be increased by about 124 mA, the photoelectric conversion efficiency of the solar cell can be increased by about 0.05%, and the bifaciality coefficient of the solar cell can be increased by about 7.7%.

[0051] In some embodiments, referring to FIGS. 1 and 3 together, the direction from the doped conductive layer 103 to the dielectric layer 104 is defined as the third direction Z, the plane perpendicular to the third direction Z is defined as the projection plane, and the orthographic projection of the doped conductive layer 103 on the projection plane is located within the orthographic projection of the dielectric layer 104 on the projection plane. In this way, whether it is the electrode region 101 where the doped conductive layer 103 is provided or some non - electrode regions 102 where the doped conductive layer 103 is provided, the dielectric layer 104 is provided between the electrode region 101 and the non - electrode region 102 and the doped conductive layer 103. Thereby, it is ensured that the dielectric layer 104 corresponding to the doped conductive layer 103 is designed for any region having the doped conductive layer 103 so as to form a passivation contact structure. In other words, whether it is the electrode region 101 or the non - electrode region 102, in the case of the first surface 100a on which the doped conductive layer 103 is provided, the dielectric layer 104 is provided between the part of the first surface 100a and the doped conductive layer 103.

[0052] Note that the thickness direction of the substrate 100 is the direction from the doped conductive layer 103 toward the dielectric layer 104.

[0053] In some embodiments, referring to FIG. 4, the doped conductive layer 103 is provided only in some of the non-electrode regions 102 among the plurality of non-electrode regions 102.

[0054] Note that FIG. 4 only shows that the doped conductive layer 103 is provided in two non-electrode regions 102 and not provided in one non-electrode region 102. In one embodiment of the present disclosure, the number of non-electrode regions 102 provided with the doped conductive layer 103 and the number of non-electrode regions 102 not provided with the doped conductive layer 103 are not limited. In actual applications, it can be flexibly adjusted according to specific needs. Further, FIG. 4 is only an example of the arrangement form of the non-electrode regions 102 provided with the doped conductive layer 103 and the non-electrode regions 102 not provided with the doped conductive layer 103. One embodiment of the present disclosure does not limit the arrangement form of the non-electrode regions 102 provided with the doped conductive layer 103 and the non-electrode regions 102 not provided with the doped conductive layer 103, and in actual applications, it can be flexibly adjusted according to specific needs.

[0055] In some embodiments, referring to FIG. 1, FIG. 3, or FIG. 4, the doped conductive layer 103 is a plurality of first conductive portions 113 arranged at intervals along the first direction X, corresponding to the electrode region 101 and located in the corresponding electrode region 101, a plurality of first conductive portions 113 extending along the second direction Y intersecting the first direction X, and at least one second conductive portion 123 located in the non-electrode region 102 and in contact with and connected to the first conductive portions 113 of the two electrode regions 101 adjacent to the non-electrode region 102 where the second conductive portion 123 is provided.

[0056] Note that, regardless of whether the doped conductive layers 103 located in one non-electrode region 102 are in contact and connected to each other or are spaced apart from each other, they are regarded as the second conductive part 123 as a whole. The specific structure of the second conductive part 123 located in the non-electrode region 102 will be described in detail later.

[0057] In other words, in the case of two adjacent first conductive parts 113 along the first direction X, the second conductive part 123 can be provided within the interval between the two first conductive parts 113, and by the second conductive part 123 contacting and connecting with the two adjacent first conductive parts 113, the photo-generated carriers in the non-electrode region 102 can first be collected through the second conductive part 123, and then transported to the first conductive part 113 through the second conductive part 123 that is in contact and connected with the first conductive part 113, and further transported to the electrode through the first conductive part 113. Therefore, it is advantageous for the second conductive part 123 to improve the collection efficiency of the photo-generated carriers on the first surface 100a by the electrode.

[0058] Note that in some cases, referring to FIG. 4, the second conductive part 123 is not provided in any of the non-electrode regions 102, nor is it provided in any of the intervals between two adjacent arbitrary first conductive parts 113. In actual applications, the non-electrode regions 102 that need to be provided with the second conductive part 123 and the number of the second conductive parts 123 provided in the non-electrode regions 102 can be flexibly selected according to specific needs.

[0059] In some embodiments, referring to FIG. 4, the second conductive part 123 is located in the non-electrode region 102, but the second conductive part 123 is not provided in any of the non-electrode regions 102.

[0060] In some other embodiments, referring to FIG. 3, the second conductive portion 123 corresponds to the non-electrode region 102. In other words, the second conductive portion 123 is provided in each non-electrode region 102. Thus, each non-electrode region 102 having the passivation-capable dielectric layer 104 and the second conductive portion 123 can not only reduce the probability of recombination of photo-generated carriers in each non-electrode region 102, but also collect the photo-generated carriers in each non-electrode region 102 by the corresponding second conductive portion 123 and transport them to the nearest first conductive portion 113, which is advantageous.

[0061] In some embodiments, referring to FIGS. 3 to 5, FIG. 5 is a schematic diagram of a third type of local upper surface structure of a solar cell according to an embodiment of the present disclosure. The second conductive portion 123 may be a plurality of first elongated structures 133 arranged at intervals along the second direction Y and including a plurality of first elongated structures 133 extending along the first direction X so as to be in contact with and connected to adjacent first conductive portions 113.

[0062] In this way, both ends of the first elongated structure 133 in the first direction X are in contact with and connected to two adjacent first conductive portions 113 respectively, so that the photo-generated carriers in a partial region of the non-electrode region 102 can be directly transported by the first elongated structure 133 along the first direction X to the first conductive portion 113, which is advantageous for finally improving the collection efficiency of the photo-generated carriers on the first surface 100a by the electrode.

[0063] In some cases, referring to FIG. 4 or FIG. 5, the second conductive part 123 may include only a plurality of first elongated structures 133 arranged at intervals along the second direction Y, and the plurality of first elongated structures 133 that extend along the first direction X so as to be in contact with and connected to the adjacent first conductive parts 113. In some cases, referring to FIG. 4, only some of the non-electrode regions 102 may have the first elongated structures 133, that is, only some of the non-electrode regions 102 may have the doped conductive layer 103. In some other cases, referring to FIG. 5, each non-electrode region 102 may have the first elongated structures 133, that is, the second conductive part 123 corresponds to the non-electrode region 102.

[0064] Note that, referring to FIG. 4 or FIG. 5, the second conductive part 123 includes only a plurality of first elongated structures 133 arranged at intervals along the second direction Y, and the first elongated structure 133 is the second conductive part 123.

[0065] Note that FIGS. 4 and 5 only show that the second conductive part 123 located in the non-electrode region 102 includes only four first elongated structures 133. An embodiment of the present disclosure does not limit the number of first elongated structures 133 included in any second conductive part 123. For example, the number of first elongated structures 133 included in the second conductive part 123 may be 1, 2, 3, 5, etc. Also, in FIGS. 4 and 5, only the example where the number of first elongated structures 133 included in different second conductive parts 123 located in different non-electrode regions 102 is the same is shown. In actual applications, the number of first elongated structures 133 included in different second conductive parts 123 located in different non-electrode regions 102 may be different and can be adjusted according to specific needs.

[0066] In some examples, based on the fact that the second conductive part 123 includes only a plurality of first elongated structures 133 arranged at intervals along the second direction Y, the interval between adjacent first elongated structures 133 in the second direction Y may be 5 μm to 200 μm.

[0067] The size of the interval between adjacent first elongated structures 133 will affect the density of the arrangement of the plurality of first elongated structures 133. In actual applications, the interval between adjacent first elongated structures 133 can be flexibly adjusted based on the requirements for the density of the arrangement of the first elongated structures 133. Also, the intervals between two different adjacent first elongated structures 133 may be the same or different. For example, three adjacent first elongated structures 133 along the second direction Y have two intervals in the second direction Y, and the sizes of the two intervals may be the same or different.

[0068] In some other cases, referring to FIG. 3 or FIG. 6, FIG. 6 is a schematic diagram of a fourth type of local upper surface structure of a solar cell according to an embodiment of the present disclosure. Based on the fact that the second conductive portion 123 includes a plurality of first elongated structures 133 arranged at intervals along the second direction Y, the second conductive portion 123 may further include at least one second elongated structure 143 extending along the second direction Y.

[0069] Still referring to FIG. 3 or FIG. 6, the plurality of first elongated structures 133 and the at least one second elongated structure 143 located in the same non-electrode region 102 jointly form the second conductive portion 123.

[0070] In some examples, referring to FIG. 6, based on the fact that the second conductive portion 123 includes a plurality of first elongated structures 133 arranged at intervals along the second direction Y, the second conductive portion 123 may include only one second elongated structure 143 extending along the second direction Y.

[0071] In this way, based on the fact that both ends of the first elongated structure 133 in the first direction X are respectively in contact with and connected to two adjacent first conductive parts 113, the second elongated structure 143 can also collect the photo-generated carriers in the non-electrode region 102 along the second direction Y. On the one hand, the photo-generated carriers in a partial region of the non-electrode region 102 can be directly transported by the first elongated structure 133 to the first conductive part 113 along the first direction X. On the other hand, the first elongated structure 133 can collect the carriers in the second elongated structure 143 and further transport them to the first conductive part 113 along the first direction X, thereby being advantageous for finally improving the collection efficiency of the photo-generated carriers on the first surface 100a by the electrode.

[0072] In some other examples, referring to FIG. 3, based on the fact that the second conductive part 123 includes a plurality of first elongated structures 133 arranged at intervals along the second direction Y, the second conductive part 123 may include a plurality of second elongated structures 143 that are arranged at intervals along the first direction X and intersect with the plurality of first elongated structures 133 such that a lattice structure 153 is formed. Note that the number of the plurality of second elongated structures 143 arranged at intervals along the first direction X is two or more.

[0073] Note that along the second direction Y, the plurality of first elongated structures 133 can collect the photo-generated carriers in different regions of the non-electrode region 102. Based on this, by designing a plurality of second elongated structures 143 that intersect with the plurality of first elongated structures 133 such that a lattice structure 153 is formed, a plurality of transport paths for transporting the photo-generated carriers in the non-electrode region 102 to the first conductive part 113 can be provided, and each of the plurality of second elongated structures 143 can also collect the photo-generated carriers in different regions of the non-electrode region 102. Thereby, the lattice structure 153 further improves the collection efficiency of the photo-generated carriers in the entire non-electrode region 102, thereby being advantageous for finally improving the collection efficiency of the photo-generated carriers on the first surface 100a by the electrode by further improving the collection efficiency of the photo-generated carriers of the doped conductive layer 103 on the first surface 100a.

[0074] Note that in FIG. 3, only the fact that the second conductive part 123 located in a certain non - electrode region 102 includes two second elongated structures 143 is shown. One embodiment of the present disclosure does not limit the number of the second elongated structures 143 included in any second conductive part 123. For example, the number of the second elongated structures 143 included in the second conductive part 123 may be 3, 4, or 5, etc. Also, the number of the second elongated structures 143 included in different second conductive parts 123 located in different non - electrode regions 102 may be the same or different, and can be adjusted according to specific needs.

[0075] Referring to FIG. 3 or FIG. 6, in an embodiment having the first conductive part 113, the first elongated structure 133, and the second elongated structure 143, the first elongated structure 133 has a first width W1 along the second direction Y. The second elongated structure 143 has a second width W2 along the first direction X. The first conductive part 113 has a third width W3 along the first direction X. Here, the third width W3 is larger than the first width W1 and larger than the second width W2.

[0076] Note that both the first elongated structure 133 and the second elongated structure 143 are mainly used to collect photo - generated carriers in different regions of the non - electrode region 102, and since it is necessary to avoid covering too many non - electrode regions 102 so that too many non - electrode regions 102 are blocked and unable to absorb much light, it is not appropriate to design the first width W1 of the first elongated structure 133 and the second width W2 of the second elongated structure 143 to be too large. In contrast, the first conductive part 113 not only needs to further collect the photo - generated carriers collected in the first elongated structure 133 and the second elongated structure 143, but also needs to be in contact with the electrode so that the photo - generated carriers are finally transported to the electrode. Therefore, it is necessary to design the first conductive part 113 to have a strong photo - generated carrier collection ability and to design the first conductive part 113 to have a small contact resistance with the electrode.

[0077] Based on this, by designing the third width W3 to be larger than the first width W1 and larger than the second width W2, the volume of the first conductive part 113 can be made larger than the volume of the first elongated structure 133 and larger than the volume of the second elongated structure 143. On one hand, while the first elongated structure 133 and the second elongated structure 143 collect the optically generated carriers in different regions of the non-electrode region 102, it is advantageous that the non-electrode region 102 can receive more incident light so as to ensure that the non-electrode region 102 has a high light absorption rate. On the other hand, it is advantageous for improving the first conductive part 113 to have a good collection efficiency of the optically generated carriers in the first elongated structure 133 and the second elongated structure 143, and it is also advantageous for improving the contact area between the first conductive part 113 and the electrode, thereby being advantageous for reducing the contact resistance between the first conductive part 113 and the electrode. In this way, the cooperation of the two aspects can improve the light absorption rate by the first surface 100a and is advantageous for improving the passivation effect of the passivation contact structure composed of the doped conductive layer 103 and the dielectric layer 104 on the first surface 100a. Thereby, the collection of the optically generated carriers on the first surface 100a by the electrode is improved, which is advantageous for improving the photoelectric conversion efficiency of the entire first surface 100a, and thereby is advantageous for improving the bifaciality factor of the solar cell.

[0078] In addition, in FIGS. 3 to 6, only the example that the first widths W1 of different first elongated structures 133 are the same is taken. In actual applications, the first widths W1 of different first elongated structures 133 may be different and can be adjusted according to specific needs. In FIG. 3 or FIG. 6, only the example that the second widths W2 of different second elongated structures 143 are the same is taken. In actual applications, the second widths W2 of different second elongated structures 143 may be different and can be adjusted according to specific needs. In FIGS. 1 to 6, only the example that the third widths W3 of different first conductive parts 113 are the same is taken. In actual applications, the third widths W3 of different first conductive parts 113 may be different and can be adjusted according to specific needs.

[0079] Referring to FIGS. 3 to 6, in an embodiment having the first elongated structure 133, the first elongated structure 133 has a first width W1 along the second direction Y, and the first width W1 is 5 μm to 100 μm, for example, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 75 μm, 80 μm, 95 μm, 95 μm, 100 μm or 105 μm, etc.

[0080] When the first width W1 is less than 5 μm, it is disadvantageous for the efficient collection of photo-generated carriers in the non-electrode region 102 by the first elongated structure 133. When the first width W1 is greater than 100 μm, the non-electrode region 102 covered by the first elongated structure 133 is too much, which is disadvantageous for the irradiation of incident light to the non-electrode region 102, so it is disadvantageous for the absorption of light by the non-electrode region 102. Based on this, by designing the first width W1 to be 5 μm to 100 μm, it is guaranteed that the first elongated structure 133 has a high collection efficiency of light for photo-generated carriers in the non-electrode region 102, and at the same time, most of the non-electrode region 102 is not covered by the first elongated structure 133, thereby being advantageous for ensuring a high absorption rate of light by the non-electrode region 102.

[0081] Referring to FIG. 3 or FIG. 6, in an embodiment having the second elongated structure 143, the second elongated structure 143 has a second width W2 along the first direction X, and the second width W2 is 5 μm to 100 μm, for example, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 75 μm, 80 μm, 90 μm, 95 μm, 100 μm or 105 μm, etc.

[0082] It should be noted that the technical effects achieved by designing the second width W2 to be 5 μm to 100 μm are similar to the technical effects achieved by designing the first width W1 to be 5 μm to 100 μm, and will not be described in detail here.

[0083] Referring to FIGS. 1 to 6, in the embodiment having the first conductive portion 113, the first conductive portion 113 has a third width W3 along the first direction X, and the third width W3 may be 50 μm to 500 μm, for example, 60 μm, 80 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm or 450 μm, etc.

[0084] When the third width W3 is less than 50 μm, the contact area between the first conductive portion 113 and the electrode becomes small, the contact resistance between the two increases, the loss when the photo-generated carriers are transported from the first conductive portion 113 to the electrode becomes large, which is disadvantageous for the collection of photo-generated carriers in the second conductive portion 123 by the first conductive portion 113. When the third width W3 is greater than 500 μm, the first surface 100a covered by the first conductive portion 113 is too much. In other words, the ratio of the electrode region 101 on the first surface 100a is too large, which is disadvantageous for the irradiation of incident light on the first surface 100a, and thus is disadvantageous for the absorption of light by the first surface 100a. Based on this, by designing the third width W3 to be 50 μm to 500 μm, it is guaranteed that the first conductive portion 113 has a high light collection efficiency for photo-generated carriers in the second conductive portion 123. At the same time, the contact area between the first conductive portion 113 and the electrode is improved, thereby reducing the contact resistance between the first conductive portion 113 and the electrode, and increasing the ratio of the non-electrode region 102 on the first surface 100a, thereby guaranteeing a high light absorption rate by the entire first surface 100a.

[0085] In some embodiments, referring to FIG. 3, the grid-like structure 153 has a plurality of mesh holes 163 defined by the first elongated structure 133 and the second elongated structure 143. The first dimension D1 of the mesh holes 163 in the first direction X is 100 μm or less, and the second dimension D2 of the mesh holes 163 in the second direction Y may be 5 μm to 200 μm.

[0086] Note that the mesh holes 163 are regions mainly for absorbing light on the first surface 100a. The exposed non-electrode region 102 is divided into a plurality of mesh holes 163 by the first elongated structure 133 and the second elongated structure 143. Since the first dimension D1 of the mesh holes 163 is 100 μm or less and the second dimension D2 is 5 μm to 200 μm, it is advantageous that the photo-generated carriers in each mesh hole 163 can all be collected by the corresponding first elongated structure 133 and / or second elongated structure 143 in proximity thereto. As a result, it is improved that the second conductive portion 123 can correspondingly collect the photo-generated carriers in any mesh hole 163, so that the collection efficiency of the photo-generated carriers on the first surface 100a by the electrodes is improved.

[0087] Note that the peripheries of some of the mesh holes 163 are surrounded by both the first elongated structure 133 and the second elongated structure 143, and the peripheries of some other mesh holes 163 are surrounded by the three of the first elongated structure 133, the second elongated structure 143, and the first conductive portion 113. Also, the sizes of the first dimension D1 of different mesh holes 163 arranged along the first direction X may be the same or different. The sizes of the second dimension D2 of different mesh holes 163 arranged along the second direction Y may be the same or different, and any of them can be adjusted according to actual needs.

[0088] In some embodiments, referring to FIGS. 1 and 2, the direction from the doped conductive layer 103 to the dielectric layer 104 is defined as the third direction Z, the plane orthogonal to the third direction Z is defined as the projection plane, the orthographic projection area of the doped conductive layer 103 located in a partial area of the non-electrode region 102 on the projection plane is defined as the first area, the orthographic projection area of the first surface 100a on the projection plane is defined as the second area, and the ratio of the first area to the second area can be 5% to 30%.

[0089] When the ratio of the first area to the second area is less than 5%, the area of the non-electrode region 102 covered by the doped conductive layer 103 is too small, which is disadvantageous for the efficient collection of photo-generated carriers in the non-electrode region 102 by the doped conductive layer 103. When the ratio of the first area to the second area is greater than 30%, the area of the non-electrode region 102 covered by the doped conductive layer 103 is too large, which is disadvantageous for the irradiation of incident light to more non-electrode regions 102, and thus is disadvantageous for the absorption of light by the non-electrode region 102. Therefore, by designing the ratio of the first area to the second area to be less than 5% to 30%, it is ensured that the doped conductive layer 103 has a high light collection efficiency for photo-generated carriers in the non-electrode region 102. At the same time, most of the non-electrode region 102 is not covered by the doped conductive layer 103, thereby ensuring a high light absorption rate by the non-electrode region 102.

[0090] In some embodiments, referring to FIGS. 1 and 7 together, FIG. 7 is a schematic enlarged cross-sectional structure diagram of the square enclosure II in FIG. 1. The substrate 100 further has a second surface 100b provided facing away from the first surface 100a. The second surface 100b has a third surface structure 150 including a plurality of second pyramid structures 160.

[0091] It should be noted that the second pyramid structure 160 is advantageous for increasing the probability that light incident on the second surface 100b at different angles is reflected by the second pyramid structure 160 and absorbed by the second surface 100b, thereby further improving the high light absorption rate of the remaining second surface 100b, and thus is advantageous for improving the photoelectric conversion efficiency of the entire second surface 100b.

[0092] In some embodiments, referring to FIGS. 2 and 7 together, the one-dimensional dimension L1 at the bottom of the first pyramid structure 140 is smaller than the one-dimensional dimension L2 at the bottom of the second pyramid structure 160.

[0093] Note that the first pyramid structure 140 is the surface form of some of the first surfaces 100a. On the one hand, the first pyramid structure 140 improves the light absorption rate by the first surface 100a. On the other hand, it is necessary to consider the influence of the first pyramid structure 140 on the passivation effect of the dielectric layer 104 and the doped conductive layer 103 located on the first surface 100a with respect to the first surface 100a. Based on this, by designing the one-dimensional dimension L1 at the bottom of the first pyramid structure 140 to be smaller than the one-dimensional dimension L2 at the bottom of the second pyramid structure 160, a high light absorption rate at the first surface 100a is guaranteed, and at the same time, it is advantageous to ensure a good passivation effect of the dielectric layer 104 and the doped conductive layer 103 at the first surface 100a.

[0094] In some embodiments, the size of the one-dimensional dimension L1 at the bottom of the first pyramid structure 140 may be 0.5 μm to 5 μm, for example, 1 μm, 1.5 μm, 2 μm, 2.5 μm, 3 μm, 3.5 μm, 4 μm or 4.5 μm, etc. The maximum value of the height of the first pyramid structure 140 is 0.5 μm to 3 μm along the third direction Z, for example, 1 μm, 1.5 μm, 2 μm or 2.5 μm, etc.

[0095] In some embodiments, the size of the one-dimensional dimension L2 at the bottom of the second pyramid structure 160 may be 2 μm to 5 μm, for example, 2.5 μm, 3 μm, 3.5 μm, 4 μm or 4.5 μm, etc. The maximum value of the height of the second pyramid structure 160 is 1 μm to 3 μm along the third direction Z, for example, 1.5 μm, 2 μm or 2.5 μm, etc.

[0096] Referring to FIG. 8, FIG. 8 is a schematic top view of a kind of top surface structure at the bottom of the first pyramid structure in a solar cell according to an embodiment of the present disclosure. The one-dimensional dimension L1 at the bottom of the first pyramid structure 140 includes any one of the length, width, or diagonal length of the orthographic projection pattern of the bottom of the first pyramid structure 140 on the substrate 100. Also, in FIG. 8, it is exemplified that the orthographic projection pattern of the bottom of the first pyramid structure 140 on the substrate 100 is a regular quadrilateral. In this case, the one-dimensional dimension L1 at the bottom of the first pyramid structure 140 is any one of the length, width, or diagonal length of the regular quadrilateral.

[0097] In actual application, the orthographic projection pattern of the bottom of the first pyramid structure 140 on the substrate 100 may be an irregular polygon. In this case, the length, width, or diagonal length of the orthographic projection pattern of the bottom of the first pyramid structure 140 on the substrate 100 is not absolute, but is artificially defined to characterize the one-dimensional dimension L1 at the bottom of the first pyramid structure 140. For example, referring to FIG. 9, FIG. 9 is a schematic top view of another top surface structure at the bottom of the first pyramid structure in a solar cell according to an embodiment of the present disclosure. The orthographic projection pattern of the bottom of the first pyramid structure 140 on the substrate 100 is an irregular quadrilateral. In this case, the length L11 of the orthographic projection pattern of the bottom of the first pyramid structure 140 on the substrate 100 can be defined as the length of the longest side of the irregular quadrilateral, the width L12 of the orthographic projection pattern of the bottom of the first pyramid structure 140 on the substrate 100 can be defined as the length of the shortest side of the irregular quadrilateral, and the diagonal length L13 of the orthographic projection pattern of the bottom of the first pyramid structure 140 on the substrate 100 can be defined as the length of the longest diagonal side of the irregular quadrilateral. It should be noted that the above is only an example, and in actuality, it can be flexibly defined according to actual needs.

[0098] In addition, the orthographic projection pattern of the bottom of the first pyramid structure 140 on the substrate 100 may be an irregular polygon, a circle, or an irregular shape approximating a circle, in addition to an irregular quadrilateral. In this case, the one-dimensional dimension L1 at the bottom of the first pyramid structure 140 is selected from a plurality of regions with different specific areas at the bottom of the first pyramid structure 140. The region of the specific area can be flexibly defined according to actual needs. Next, the average value of the length, width, diagonal, or diameter of the plurality of regions with different specific areas is obtained.

[0099] Note that the one-dimensional dimension L2 at the bottom of the second pyramid structure 160 is similar to the definition of the one-dimensional dimension L1 at the bottom of the first pyramid structure 140 and will not be described in detail here. Also, the one-dimensional dimensions L1 at the bottoms of different first pyramid structures 140 may be different or the same, but the one-dimensional dimension L1 at the bottom of the first pyramid structure 140 is within a certain numerical range. The one-dimensional dimensions L2 at the bottoms of different second pyramid structures 160 may be different or the same, but the one-dimensional dimension L2 at the bottom of the second pyramid structure 160 is also within a certain numerical range.

[0100] In some embodiments, referring to FIG. 2, the one-dimensional dimension L3 at the bottom of the platform structure 130 may be 5 μm to 20 μm, for example, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, 13 μm, 14 μm, 15 μm, 16 μm, 17 μm, 18 μm, or 19 μm.

[0101] Note that the one-dimensional dimension L3 at the bottom of the platform structure 130 is also similar to the definition of the one-dimensional dimension L1 at the bottom of the first pyramid structure 140 and will not be described in detail here. Also, the one-dimensional dimensions L3 at the bottoms of different platform structures 130 may be different or the same, but the one-dimensional dimension L3 at the bottom of the platform structure 130 is within a certain numerical range.

[0102] In some embodiments, the thickness of the doped conductive layer 103 may be 50 nm to 200 nm along the third direction Z.

[0103] In some embodiments, referring to FIG. 10, FIG. 10 is a schematic cross-sectional view of another local structure of a solar cell according to an embodiment of the present disclosure. The solar cell may further include a first electrode 107 that is electrically in contact with the doped conductive layer 103.

[0104] In some embodiments, referring to FIG. 10, the solar cell may further include a first passivation layer 105 that covers the first surface 100a on which the dielectric layer 104 and the doped conductive layer 103 are formed, and a first electrode 107 that penetrates the first passivation layer 105 and is electrically in contact with the doped conductive layer 103.

[0105] In some embodiments, the first passivation layer 105 may have a single-layer structure or a laminated structure. The material of the first passivation layer 105 may be at least one of materials such as silicon oxide, silicon nitride, silicon oxynitride, silicon carbon oxynitride, titanium oxide, hafnium oxide, or alumina.

[0106] In some examples, referring to FIG. 10, the first passivation layer 105 includes a first sub-passivation layer and a second sub-passivation layer that are sequentially laminated along the third direction Z. Here, the material of the first sub-passivation layer may be alumina, and the material of the second sub-passivation layer may be at least one of silicon oxide, silicon nitride, and silicon oxynitride.

[0107] In some embodiments, the thickness of the first sub-passivation layer in the third direction Z may be 5 nm to 10 nm.

[0108] In some embodiments, with continued reference to FIG. 10, the substrate 100 further has a second surface 100b provided facing away from the first surface 100a. The solar cell may further include a second electrode 117 electrically connected to the second surface 100b.

[0109] In some embodiments, with continued reference to FIG. 10, the solar cell may further include a second passivation layer 115 located on the second surface 100b and a second electrode 117 that penetrates the second passivation layer 115 and is in electrical contact with the second surface 100b.

[0110] It should be noted that the film layer structure and material composition of the second passivation layer 115 are similar to those of the first passivation layer 105 and will not be described in detail here.

[0111] Also, FIGS. 1-6 and FIG. 10 are all drawn with different filling forms for the first conductive part 113 and the second conductive part 123 in order to distinguish them. In actual application, the first conductive part 113 and the second conductive part 123 can be formed synchronously. FIGS. 3, 6, and 10 are all drawn with different filling forms for the first elongated structure 133 and the second elongated structure 143 in order to distinguish them. In actual application, both the first elongated structure 133 and the second elongated structure 143 belong to the second conductive part 123, that is, the first elongated structure 133 and the second elongated structure 143 can also be formed synchronously.

[0112] In summary, since the dielectric layer 104 and the doped conductive layer 103 are provided not only in the electrode region 101 but also in some of the non-electrode regions 102, the dielectric layer 104 and the doped conductive layer 103 have a passivation effect on both the electrode region 101 and the non-electrode regions 102, which is advantageous for reducing carrier recombination on the first surface 100a. Further, the first surface 100a facing the doped conductive layer 103 has a first surface structure 110 including a plurality of platform structures 130, which is advantageous for improving the uniformity of the dielectric layer 104 and the doped conductive layer 103 formed on some of the surfaces. As a result, the passivation effect of the dielectric layer 104 and the doped conductive layer 103 on the first surface 100a is further improved, and it is advantageous for further reducing the defect density of the first surface 100a. The first surface 100a not facing the doped conductive layer 103 has a second surface structure 120 including a plurality of first pyramid structures 140. Thus, the probability that light incident on the remaining first surface 100a at different angles is reflected by the first pyramid structures 140 and absorbed by the remaining first surface 100a is increased, which is advantageous for further improving the high light absorption rate of the remaining first surface 100a. In this way, by the cooperation of each aspect, it is advantageous for improving the photoelectric conversion efficiency of the entire first surface 100a, and thereby for improving the bifaciality factor of the solar cell.

[0113] Another embodiment of the present disclosure further provides a stacked cell including the solar cell according to the above embodiment. The stacked cell according to another embodiment of the present disclosure will be described in detail below in conjunction with the drawings. For the same or corresponding parts as the above embodiment, they will not be described in detail here.

[0114] FIG. 11 is a schematic diagram of a local cross-sectional structure of a stacked cell according to another embodiment of the present disclosure.

[0115] Referring to FIGS. 1 and 11, the stacked cell 106 includes a bottom cell 116, which is the solar cell according to the above embodiment, and a top cell 126 located on one side spaced apart from the substrate 100 of the doped conductive layer 103 of the bottom cell 116.

[0116] In some embodiments, referring to FIGS. 1, 10, and 11, the substrate 100 further has a second surface 100b provided facing away from the first surface 100a. The top cell 126 is located on one side spaced apart from the second surface 100b of the first surface 100a.

[0117] In some examples, referring to FIGS. 1 and 11 together, the bottom cell 116 may include only the substrate 100 having the first surface 100a, and the dielectric layer 104 and the doped conductive layer 103 sequentially stacked on the first surface 100a. Based on this, the first surface 100a not covered by the dielectric layer 104 and the doped conductive layer 103, the dielectric layer 104, and the doped conductive layer 103 jointly form a surface, and the top cell 126 is directly located on the surface. In one example, the stacked cell may further include a composite layer located between the first surface 100a not covered by the dielectric layer 104 and the doped conductive layer 103, the dielectric layer 104, and the surface jointly formed by the doped conductive layer 103 and the top cell 126.

[0118] In some other examples, referring to FIGS. 10 and 11 together, based on the bottom cell 116 including the substrate 100 having the first surface 100a, and the dielectric layer 104 and the doped conductive layer 103 sequentially stacked on the first surface 100a, the bottom cell 116 may further include a first passivation layer 105 covering the first surface 100a on which the dielectric layer 104 and the doped conductive layer 103 are formed, and a first electrode 107 located on a part of the surface of the first passivation layer 105 spaced apart from the substrate 100 so as to be in electrical contact with the doped conductive layer 103 through the first passivation layer 105. In other words, the top cell 126 is located on one side spaced apart from the substrate 100 of the first passivation layer 105 so as to cover the surface of the first passivation layer 105 and the surface of the first electrode 107.

[0119] In some embodiments, the top cell 126 may include a first transport layer, a perovskite substrate, a second transport layer, a transparent conductive layer, and an antireflection layer that are stacked. Here, the first transport layer faces the bottom cell 116.

[0120] In some embodiments, the first transport layer may be either an electron transport layer or a hole transport layer, and the second transport layer may be the other of the electron transport layer or the hole transport layer.

[0121] Yet another embodiment of the present disclosure further provides a method for manufacturing a solar cell for manufacturing the solar cell according to the above embodiment. The method for manufacturing a solar cell according to yet another embodiment of the present disclosure will be described in detail below in conjunction with the drawings. Note that for the same or corresponding parts as those in the above embodiment, detailed descriptions will not be given here.

[0122] FIGS. 12 to 18 are schematic diagrams of local cross-sectional structures corresponding to each step in a method for manufacturing a solar cell according to yet another embodiment of the present disclosure.

[0123] Referring to FIGS. 12 to 18, the method for manufacturing a solar cell includes at least the following steps.

[0124] In S101, referring to FIG. 12, FIG. 12 is a schematic diagram of a local cross-sectional structure of an initial substrate in a method for manufacturing a solar cell according to yet another embodiment of the present disclosure, and an initial substrate 170 having an initial first surface 170a including initial electrode regions 111 and initial non-electrode regions 112 alternately provided along a first direction X is provided.

[0125] In some embodiments, referring to FIG. 12, the initial substrate 170 further has an initial second surface 170b provided facing away from the initial first surface 170a. Referring to FIGS. 12 and 7 together, the manufacturing method may further include performing a second texturing process such that the initial second surface 170b is converted into the second surface 100b before forming the initial dielectric layer thereafter. The second surface 100b has a third surface structure 150 including a plurality of second pyramid structures 160.

[0126] In some cases, after forming the first pyramid structure based on the initial first surface 170a, the one-dimensional dimension L1 at the bottom of the first pyramid structure is smaller than the one-dimensional dimension L1 at the bottom of the second pyramid structure 160.

[0127] In some cases, referring to FIGS. 12 and 13 together, FIG. 13 is a schematic partial enlarged cross-sectional view of the initial substrate 170 after the second texturing process in the method for manufacturing a solar cell according to another embodiment of the present disclosure. In the step of performing the second texturing process on the initial second surface 170b, the second texturing process is further performed on the initial first surface 170a, whereby the initial first surface 170a has an initial first surface structure 180 including a third pyramid structure 190.

[0128] Note that since the second pyramid structure 160 and the third pyramid structure 190 are formed synchronously by the second texturing process, the one-dimensional dimension L2 at the bottom of the second pyramid structure 160 is similar to the one-dimensional dimension L4 at the bottom of the third pyramid structure 190. Also, by forming the second pyramid structure 160 and the third pyramid structure 190 in the same process step, not only can the process flow be omitted, but the third pyramid structure 190 also serves as a basis for making the surface morphology of the electrode region include a plurality of platform structures and a part of the surface morphology of the non-electrode region include a plurality of first pyramid structures when forming the first surface thereafter.

[0129] Note that the one-dimensional dimension L4 at the bottom of the third pyramid structure 190 is also similar to the definition of the one-dimensional dimension at the bottom of the first pyramid structure according to the above embodiment, and will not be described in detail here. Note that the one-dimensional dimensions L4 at the bottoms of different third pyramid structures 190 may be different or the same, but the one-dimensional dimension L4 at the bottom of the third pyramid structure 190 is within a numerical range.

[0130] In some embodiments, after performing the second texturing process and before subsequently forming the initial dielectric layer, the manufacturing method may further include the following steps.

[0131] An emitter is formed in a region close to the second surface 100b of the initial substrate 170. The initial substrate 170 is exposed from the top surface of the emitter, and the top surface of the emitter overlaps with the second surface 100b. The type of doping element of the emitter is different from the type of doping element of the initial substrate 170 such that a PN junction is ultimately formed with the substrate.

[0132] In some examples, the sheet resistance of the emitter diffusion area may be 80 Ω / sq to 200 Ω / sq.

[0133] In some examples, the method of forming the emitter may include the step of diffusing a doping element into a part of the initial substrate 170 by performing a first doping process on the second surface 100b to form the emitter. In one example, the first doping process may be either an ion implantation process or a source diffusion process.

[0134] Note that in some cases, when the initial substrate 170 is an N-type substrate, a boron diffusion process can be performed on the second surface 100b. In some other cases, when the initial substrate 170 is a P-type substrate, a phosphorus diffusion process can be performed on the second surface 100b.

[0135] Note that in the step of performing the first doping process on the second surface 100b so that the emitter is formed, taking the boron diffusion process as an example, it is easy to form borosilicate glass on the surface of the initial substrate 170. The surface of the initial substrate 170 on which the borosilicate glass is formed includes, but is not limited to, the initial first surface 170a, the side surface of the initial substrate 170, and the second surface 100b. Therefore, it is necessary to remove the borosilicate glass located at least on the initial first surface 170a and the side surface of the initial substrate 170 with hydrofluoric acid in a chain form.

[0136] Similarly, in the step of performing phosphorus diffusion treatment on the second surface 100b so that an emitter is formed, it is easy to form phosphorus silicate glass on the surface of the initial substrate 170. It is also necessary to remove the phosphorus silicate glass located at least on the initial first surface 170a and the side surfaces of the initial substrate 170a.

[0137] In some embodiments, after forming the third pyramid structure 190 and before forming the initial dielectric layer, referring to FIGS. 13 and 14 together, FIG. 14 is a schematic cross-sectional view of a local enlarged structure of an initial substrate after a polishing process in a method for manufacturing a solar cell according to another embodiment of the present disclosure. The manufacturing method may further include a step of performing a polishing process on the initial first surface 170a such that the third pyramid structure 190 is converted into the platform structure 130.

[0138] In the step of the polishing process, the third pyramid structure 190 is gradually etched from the top so that the platform structure 130 is finally formed. In some examples, the remaining base of the third pyramid structure 190 after the polishing process is the platform structure 130. The one-dimensional dimension at the bottom of the base of the third pyramid structure 190 after the polishing process is 5 μm to 20 μm. Also, after the polishing process is completed, whether it is the initial electrode region 111 (see FIG. 12) or the initial non-electrode region 112 (see FIG. 12), the surface morphology thereof includes the platform structure 130.

[0139] In S102, referring to FIGS. 12 and 15, FIG. 15 is a schematic cross-sectional view of a local structure in a method for manufacturing a solar cell according to another embodiment of the present disclosure, in which an initial dielectric layer and an initial doped conductive layer are formed on an initial substrate, and an initial dielectric layer 114 covering the initial first surface 170a is formed. In S103, referring to FIG. 15, an initial doped conductive layer 173 covering one surface of the initial dielectric layer 114 separated from the initial substrate 170 is formed.

[0140] In some embodiments, still referring to FIG. 15, the step of forming the initial doped conductive layer 173 may further include forming a second doped conductive layer covering the second surface 100b (not shown). The type of doping element in the initial doped conductive layer 173 is the same as that in the second doped conductive layer. In other words, the initial doped conductive layer 173 and the second doped conductive layer are formed in the same process step.

[0141] In some embodiments, the formation of the initial doped conductive layer 173 and the second doped conductive layer may include the following steps.

[0142] By simultaneously performing a first deposition process on the second surface 100b and the initial first surface 170a after the texturing process, a first amorphous silicon layer (not shown) is formed on the surface of the initial dielectric layer 114 separated from the initial substrate 170, and a second amorphous silicon layer (not shown) is formed on the second surface 100b. For example, the first amorphous silicon layer and the second amorphous silicon layer can be formed by plasma chemical vapor deposition.

[0143] By simultaneously performing a crystallization process on the first amorphous silicon layer and the second amorphous silicon layer, the first amorphous silicon layer is converted into a first polycrystalline silicon layer (not shown), and the second amorphous silicon layer is converted into a second polycrystalline silicon layer (not shown). In some embodiments, the crystallization process includes an annealing heat treatment of the first amorphous silicon layer and the second amorphous silicon layer.

[0144] After forming the first polycrystalline silicon layer and the second polycrystalline silicon layer, a second doping process is performed on the first polycrystalline silicon layer and the second polycrystalline silicon layer, so that the first polycrystalline silicon layer is converted into the initial doped conductive layer 173, and the second polycrystalline silicon layer is converted into the second doped conductive layer.

[0145] In some embodiments, the second doping process may be either an ion implantation process or a source diffusion process.

[0146] In some embodiments, the element doped into the target in the first doping process is different from the element doped into the target in the second doping process.

[0147] In one example, the doping element employed in the first doping process is a boron element. The doping element employed in the second doping process is a phosphorus element.

[0148] In one example, the doping element employed in the second doping process is a phosphorus element. After performing the second doping process, phosphorus silicate glass is formed on both the initial doped conductive layer 173 and the second doped conductive layer, and both the second doped conductive layer and the phosphorus silicate glass will be removed in subsequent steps.

[0149] In S104, referring to FIGS. 15 and 16, FIG. 16 is a schematic cross-sectional view of a local structure after processing the initial doped conductive layer formed in the method for manufacturing a solar cell according to another embodiment of the present disclosure by a laser process. The initial doped conductive layer 173 located in a partial region of the initial non-electrode region 112 is processed by the laser process.

[0150] In order to clearly show the initial doped conductive layer 173 processed by the laser process and the initial doped conductive layer 173 not processed by the laser process, in FIG. 16, the initial doped conductive layer 173 processed by the laser process is shown as 173b, the initial doped conductive layer 173 not processed by the laser process is shown as 173a, and 173a and 173b are drawn in different filling forms. In other words, the initial doped conductive layer 173 not processed by the laser process can be regarded as the first doped conductive layer 173a, and the initial doped conductive layer 173 processed by the laser process can be regarded as the second doped conductive layer 173b. Here, the initial doped conductive layer 173 not processed by the laser process, that is, the first doped conductive layer 173a, is then retained as the doped conductive layer, and the initial doped conductive layer 173 processed by the laser process, that is, the second doped conductive layer 173b, will be removed later.

[0151] In some embodiments, in the step of forming the initial doped conductive layer 173, a second doped conductive layer covering the second surface 100b, as well as phosphorus silicate glass located in the initial doped conductive layer 173 and the second doped conductive layer, are further formed. In the step of processing the initial doped conductive layer 173 located in a partial region of the initial non-electrode region 112 by the laser process, by processing the entire second doped conductive layer by the laser process, the material properties of the entire second doped conductive layer are changed, and the material properties of the initial doped conductive layer 173 processed by the laser process are changed, whereby it is realized that the material properties of the initial doped conductive layer 173 processed by the laser process are different from the material properties of the initial doped conductive layer 173 not processed by the laser process, thereby facilitating the subsequent removal of the initial doped conductive layer 173 processed by the laser process located in the initial non-electrode region 112.

[0152] In some embodiments, referring to FIG. 17, in the initial doped conductive layer 173 located in the initial non-electrode region 112, a plurality of laser action regions 183 arranged at intervals along the second direction Y are divided. Referring to FIGS. 17 and 5 together, the laser action region 183 corresponds to the interval between adjacent first elongated structures 133 formed later, whereby the second conductive portion 123 shown in FIG. 5 is formed by the laser action region 183.

[0153] In some other embodiments, referring to FIG. 18, the plurality of laser action regions 183 are all arranged at intervals along the first direction X and the second direction Y, and the first direction X and the second direction Y intersect. Referring to FIGS. 18 and 3 together, the laser action region 183 corresponds to the mesh holes 163 of the lattice structure 153 formed by the intersection of the plurality of second elongated structures 143 and the plurality of first elongated structures 133 formed later, whereby the lattice structure 153 shown in FIG. 3 is formed by the laser action region 183.

[0154] It should be noted that the above are only two embodiments that finally form the first conductive portion 113 and the second conductive portion 123. In actual applications, by designing the specific form of the laser action region 183, the second conductive portion 123 shown in FIGS. 4 and 6 can also be formed. FIG. 17 is a schematic top view of a local structure of a structure after the initial doped conductive layer formed in the method for manufacturing a solar cell according to another embodiment of the present disclosure is processed by a laser process. FIG. 18 is another schematic top view of a local structure of a structure after the initial doped conductive layer formed in the method for manufacturing a solar cell according to another embodiment of the present disclosure is processed by a laser process. In order to clearly show the initial doped conductive layer 173 processed by the laser process and the initial doped conductive layer 173 not processed by the laser process, in FIGS. 17 and 18, the initial doped conductive layer 173 processed by the laser process is shown as 173b, and the initial doped conductive layer 173 not processed by the laser process is shown as 173a, and 173a and 173b are drawn in different filling forms.

[0155] And the step of processing the initial doped conductive layer 173 located in a partial region of the initial non-electrode region 112 by a laser process includes the step of processing the initial doped conductive layer 173 located in the laser action region 183 by the laser process, and then using the remaining initial doped conductive layer 173 that has not been processed by the laser process as the doped conductive layer.

[0156] In some embodiments, the laser employed in the laser process is a picosecond laser. The wavelength of the laser may be 300 nm to 1000 nm, for example, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm or 900 nm, etc.

[0157] In some embodiments, the spot energy density of the laser employed in the laser process is 10³ W / cm 2 ~10⁶ W / cm 2 , for example, 10³.5 W / cm 2 , 10⁴ W / cm 2 , 10⁴.5 W / cm 2 , 10⁵ W / cm 2 or 10⁵.5 W / cm 2 etc. may be acceptable.

[0158] In some embodiments, the line width of the laser employed in the laser process is 80 μm to 1500 μm, for example, 100 μm, 300 μm, 500 μm, 600 μm, 700 μm, 850 μm, 900 μm, 1000 μm, 1100 μm, 1200 μm, 1300 μm or 1400 μm, etc. may be acceptable.

[0159] In S105, referring to FIGS. 16 and 1 together, by an etching process, the initial doped conductive layer 173 and the initial dielectric layer 114 processed by a laser process are removed, a substrate 100 having a first surface 100a is formed, the remaining initial dielectric layer 114 located in the electrode region 101 and the non-electrode region 102 is made into the dielectric layer 104, and the remaining initial doped conductive layer 173 located in the electrode region 101 and the non-electrode region 102 is made into the doped conductive layer 103, and a first texturing process is performed on the exposed initial first surface 170a.

[0160] Note that, referring to FIGS. 16 and 2 together, in the step of removing the initial doped conductive layer 173 and the initial dielectric layer 114 opposite thereto processed by a laser process, since the exposed initial first surface 170a may also be slightly etched, in the step of performing a first texturing process on the subsequently exposed initial first surface 170a, a first pyramid structure 140 having a one-dimensional dimension at the bottom smaller than that of the second pyramid structure 160 can be formed.

[0161] In some embodiments, in the step of forming the second doped conductive layer 173, the second doped conductive layer is further formed, and the entire second doped conductive layer is processed by a laser process. Based on this, in the step of removing the initial doped conductive layer 173 and the initial dielectric layer 114 processed by a laser process by an etching process, the second doped conductive layer, and the phosphosilicate glass located in the initial doped conductive layer 173 and the second doped conductive layer are further removed.

[0162] In some embodiments, the process of removing the initial doped conductive layer 173 and the initial dielectric layer 114 processed by a laser process may be alkali etching. The etching solution for alkali etching may employ a mixed solution of potassium hydroxide and a texturing additive.

[0163] Note that the initial electrode region 111 and the initial non - electrode region 112 after the first texturing process are the electrode region 101 and the non - electrode region 102, respectively. The first surface 100a facing the doped conductive layer 103 has a first surface structure 110 including a plurality of platform structures 130, and the remaining first surface 100a has a second surface structure 120 including a plurality of first pyramid structures 140.

[0164] In some embodiments, referring to FIG. 10, after forming the dielectric layer 104 and the doped conductive layer 103, the manufacturing method may further include the step of forming a first passivation layer 105 covering the first surface 100a on which the dielectric layer 104 and the doped conductive layer 103 are formed, and the step of forming a second passivation layer 115 covering the second surface 100b.

[0165] In some cases, the first passivation layer 105 and the second passivation layer 115 may be formed simultaneously by a deposition process.

[0166] In some examples, both the first passivation layer 105 and the second passivation layer 115 may have a laminated structure. For example, by an atomic layer deposition process, an alumina thin film can be grown simultaneously on the first surface 100a and the second surface 100b, and then, by a plasma - enhanced chemical vapor deposition process, one or a combination of film layers of silicon oxide, silicon nitride, and silicon oxynitride can be deposited on the alumina thin film.

[0167] In some embodiments, referring to FIG. 10, after forming the dielectric layer 104 and the doped conductive layer 103, the manufacturing method may further include the step of forming a first electrode 107 that electrically contacts the doped conductive layer 103 through the first passivation layer 105, and the step of forming a second electrode 117 that electrically contacts the second surface 100b through the second passivation layer 115.

[0168] In some cases, the first electrode 107 and the second electrode 117 may be formed by a screen printing process.

[0169] In some cases, the first electrode 107 and / or the second electrode 117 may be sintered, and the sintering temperature may be 700°C to 800°C, such as 720°C, 750°C, 820°C, or 840°C. It is advantageous that the first electrode 107 has a good ohmic contact with the doped conductive layer 103, and the second electrode 117 has a good ohmic contact with the second surface 100b.

[0170] In summary, another embodiment of the present disclosure is to process the initial doped conductive layer 173 located in a partial region of the initial non-electrode region 112 by a laser process, and then remove the initial doped conductive layer 173 and the initial dielectric layer 114 processed by the laser process by an etching process, to form a substrate 100 having a first surface 100a, and the remaining initial dielectric layer 114 located in the electrode region 101 and the non-electrode region 102 is made into a dielectric layer 104, and the remaining initial doped conductive layer 173 located in the electrode region 101 and the non-electrode region 102 is made into a doped conductive layer 103. A first texturing process is performed on the exposed initial first surface 170a, whereby the first surface 100a facing the doped conductive layer 103 has a first surface structure 110 including a plurality of platform structures 130, and the remaining first surface 100a has a second surface structure 120 including a plurality of first pyramid structures 140.

[0171] Thus, since the dielectric layer 104 and the doped conductive layer 103 are provided in both the electrode region 101 and a part of the non-electrode region 102, the dielectric layer 104 and the doped conductive layer 103 have a passivation effect on both the electrode region 101 and the non-electrode region 102, thereby being advantageous for reducing carrier recombination on the first surface 100a. Further, the first surface 100a facing the doped conductive layer 103 has a plurality of platform structures 130, which is advantageous for improving the uniformity of the dielectric layer 104 and the doped conductive layer 103 formed on the part of the surface, thereby further improving the passivation effect of the dielectric layer 104 and the doped conductive layer 103 on the first surface 100a. The first surface 100a not facing the doped conductive layer 103 has a plurality of first pyramid structures 140, which is advantageous for further improving the high absorption rate of light by the remaining first surface 100a. Thus, by the cooperation of each aspect, it is advantageous for improving the photoelectric conversion efficiency of the entire first surface 100a, thereby being advantageous for improving the bifaciality factor of the solar cell.

[0172] Yet another embodiment of the present disclosure further provides a solar cell module. The solar cell module includes a cell string formed by connecting a plurality of solar cells according to any one of the above embodiments, or a cell string formed by connecting a plurality of stacked cells according to the above embodiments. The solar cell module is used for converting the received light energy into electrical energy. FIG. 19 is a schematic diagram of a local three-dimensional structure of a kind of solar cell module according to yet another embodiment of the present disclosure. FIG. 20 is a schematic diagram of a kind of cross-sectional structure of MM1 along the cross-sectional direction of FIG. 19. It should be noted that for the same or corresponding parts as those in the above embodiments, the corresponding descriptions of the above embodiments can be referred to and will not be described in detail below.

[0173] Referring to FIGS. 19 and 20, the solar cell module is formed by connecting a plurality of solar cells 40 according to the above embodiments, a plurality of laminated cells 106 (see FIG. 11) according to the above embodiments, or solar cells formed by the manufacturing method according to the above embodiments, and includes a battery string, a sealing adhesive film 41 for covering the surface of the battery string, and a cover plate 42 for covering the surface of the sealing adhesive film 41 spaced from the battery string. The solar cells 40 are electrically connected in the form of a whole or a plurality of slices to form a plurality of battery strings, and the plurality of battery strings are electrically connected in series and / or in parallel.

[0174] In some embodiments, referring to FIGS. 19 and 20, the plurality of battery strings may be electrically connected by a conductive band 402. FIG. 20 only shows the positional relationship between the solar cells, that is, the arrangement directions of the electrodes having the same polarity of the cells are the same, or the electrodes having the positive electrode polarity of each cell are all arranged facing the same side. Therefore, the conductive band is connected to different sides of two adjacent cells respectively. In some embodiments, the cells have electrodes of different polarities facing the same side, that is, the electrodes of a plurality of adjacent cells are sequentially arranged in the order of the first polarity, the second polarity, and the first polarity, and the conductive band is connected to two adjacent cells on the same side.

[0175] In some embodiments, no gap is provided between the cells, that is, the cells overlap each other.

[0176] In some embodiments, the encapsulation adhesive film 41 includes a first encapsulation layer and a second encapsulation layer. The first encapsulation layer covers one of the front or back surface of the solar cell 40, and the second encapsulation layer covers the other of the front or back surface of the solar cell 40. Specifically, at least one of the first encapsulation layer or the second encapsulation layer may be an organic encapsulation adhesive film such as a polyvinyl butyral (referred to as PVB) adhesive film, an ethylene-vinyl acetate copolymer (EVA) adhesive film, a polyolefin elastomer (POE) adhesive film, or a polyethylene terephthalate (PET) adhesive film.

[0177] In some cases, there is a further boundary line between the first encapsulation layer and the second encapsulation layer before lamination. In the solar cell module formed after the lamination process, the concepts of the first encapsulation layer and the second encapsulation layer disappear, that is, the first encapsulation layer and the second encapsulation layer form the encapsulation adhesive film 41 as a whole.

[0178] In some embodiments, the cover plate 42 may be a cover plate having a light transmission function such as a glass cover plate or a plastic cover plate. Specifically, the surface of the cover plate 42 facing the encapsulation adhesive film 41 may be a concavo-convex surface, thereby increasing the utilization rate of incident light. The cover plate 42 includes a first cover plate facing the first encapsulation layer and a second cover plate facing the second encapsulation layer.

[0179] In some embodiments, the solar cell includes, but is not limited to, any one of a PERC cell, a TOPCON cell, a HIT / HJT cell (Heterojunction Technology), a perovskite cell, or a stacked cell. The stacked cell includes, but is not limited to, a perovskite cell with a crystalline silicon cell stacked thereon, a perovskite cell with a perovskite cell stacked thereon, or a perovskite cell with a thin film cell stacked thereon.

[0180] The solar cell may be a single crystal silicon solar cell, a polycrystalline silicon solar cell, an amorphous silicon solar cell, or a multi-element compound solar cell. Specifically, the multi-element compound solar cell may be a cadmium sulfide solar cell, a gallium arsenide solar cell, a copper indium selenide solar cell, or a perovskite solar cell. Further, the solar cell may be a whole cell or a slice cell. The slice cell refers to a cell formed from a complete whole cell by a cutting process.

[0181] In some embodiments, referring to FIG. 19, in the battery string, the solar cells 40 are arranged along the first direction X. In the battery string, the main grids of two adjacent solar cells 40 are provided to intersect in the third direction Z. In the case of a solar cell module, by providing the main grids of two adjacent solar cells 40 in the battery string to intersect in the third direction Z, different potentials of the solar cell module can be tested, so the reliability of the test results can be improved.

[0182] A person skilled in the art can understand that the above embodiments are specific examples for implementing the present application, and in actual applications, various changes can be made in form and details without departing from the spirit and scope of the present application. Since a person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present application, the protection scope of the present application should be based on the content limited in the claims.

Claims

1. A substrate having a first surface including electrode regions and non-electrode regions alternately provided along a first direction, A doped conductive layer located on the first surface of the substrate, the doped conductive layer including a plurality of first conductive portions respectively located in a plurality of the electrode regions and a second conductive portion located in a partial region of the non-electrode region, A dielectric layer located between the first surface and the doped conductive layer, The first surface has a first portion facing the doped conductive layer and a second portion not facing the doped conductive layer, The first portion includes a plurality of platform structures, The second portion includes a plurality of first pyramid structures, A solar cell characterized by the above.

2. The second conductive portion is provided only in a part of the non-electrode regions among the plurality of non-electrode regions, The solar cell according to claim 1, characterized by the above.

3. The plurality of first conductive portions are arranged at intervals along the first direction and extend along a second direction intersecting the first direction, The first conductive portions located in two electrode regions adjacent to the non-electrode region where the second conductive portion is provided are both in contact with and connected to the second conductive portion, The solar cell according to claim 1, characterized by the above.

4. The second conductive portion corresponds to the non-electrode region, The solar cell according to claim 3, characterized by the above.

5. The second conductive portion is a plurality of first elongated structures arranged at intervals along the second direction and including a plurality of first elongated structures extending along the first direction so as to be in contact with and connected to adjacent first conductive portions, The solar cell according to claim 3, characterized by the above.

6. The second conductive portion further includes at least one second elongated structure extending along the second direction, The solar cell according to claim 5, characterized by the above.

7. The second conductive portion is arranged at intervals along the first direction and includes a plurality of second elongated structures intersecting the plurality of first elongated structures so as to form a grid-like structure, The solar cell according to claim 6, characterized by the above.

8. The first elongated structure has a first width along the second direction, The second elongated structure has a second width along the first direction, The first conductive portion has a third width larger than the first width and larger than the second width along the first direction, The solar cell according to claim 6, characterized by the above.

9. The grid structure has a plurality of mesh holes defined by the first elongated structure and the second elongated structure, wherein a first dimension of the mesh holes in the first direction is 100 μm or less, and a second dimension of the mesh holes in the second direction is 5 μm to 200 μm, The solar cell according to claim 7, wherein the solar cell is characterized by the above.

10. In a plan view, an area of the doped conductive layer located in a partial area of the non-electrode region is defined as a first area, an area of the first surface is defined as a second area, and a ratio of the first area to the second area is 5% to 30%. The solar cell according to claim 1, wherein the solar cell is characterized by the above.

11. The substrate further has a second surface provided facing away from the first surface, wherein the second surface has a third surface structure including a plurality of second pyramid structures. The solar cell according to claim 1, wherein the solar cell is characterized by the above.

12. A one-dimensional dimension at a bottom of the first pyramid structure is smaller than a one-dimensional dimension at a bottom of the second pyramid structure. The solar cell according to claim 11, wherein the solar cell is characterized by the above.

13. A bottom cell that is the solar cell according to claim 1, and a top cell located on one side of the doped conductive layer of the bottom cell spaced apart from the substrate, The stacked cell is characterized by the above.

14. Providing an initial substrate having an initial first surface including an initial electrode region and an initial non-electrode region alternately provided along a first direction; Forming an initial dielectric layer covering the initial first surface; Forming an initial doped conductive layer covering a surface on one side of the initial dielectric layer spaced apart from the initial substrate; Processing the initial doped conductive layer located in a partial area of the initial non-electrode region by a laser process; Removing the initial doped conductive layer and the initial dielectric layer processed by the laser process by an etching process to form a substrate having a first surface, and performing a first texturing process on the exposed initial first surface such that the remaining initial dielectric layer located in the electrode region and the non-electrode region becomes a dielectric layer, and the remaining initial doped conductive layer located in the electrode region and the non-electrode region becomes a doped conductive layer; After the first texturing process is performed, the initial electrode region and the initial non-electrode region are respectively an electrode region and a non-electrode region. The first surface facing the doped conductive layer has a first surface structure including a plurality of platform structures, The remaining part of the first surface has a second surface structure including a plurality of first pyramid structures, A method for manufacturing a solar cell, characterized in that.

15. The initial substrate further has an initial second surface provided facing away from the initial first surface, Before forming the initial dielectric layer, The method further includes a step of performing a second texturing process on the initial second surface so that the initial second surface is converted into the second surface, The second surface has a third surface structure including a plurality of second pyramid structures, The one-dimensional dimension at the bottom of the first pyramid structure is smaller than the one-dimensional dimension at the bottom of the second pyramid structure, The manufacturing method according to claim 14, characterized in that.

16. In the step of performing the second texturing process on the initial second surface, the second texturing process is further performed on the initial first surface, The initial first surface has an initial first surface structure including a third pyramid structure, The manufacturing method according to claim 15, characterized in that.

17. After forming the third pyramid structure and before forming the initial dielectric layer, The method further includes a step of performing a polishing process on the initial first surface so that the third pyramid structure is converted into the platform structure, The manufacturing method according to claim 16, characterized in that.

18. In the initial doped conductive layer located in the initial non-electrode region, laser action regions arranged at intervals along the second direction, or arranged at intervals along both the first direction and the second direction intersecting the second direction are divided, In the step of processing the initial doped conductive layer located in a partial region of the initial non-electrode region by the laser process, The step of processing the initial doped conductive layer located in the laser action region by the laser process is included, The manufacturing method according to claim 14, characterized in that.

19. The laser employed in the laser process is a picosecond laser and has a wavelength of 300 nm to 1000 nm, The manufacturing method according to claim 14 or 18, characterized in that.

20. A battery string formed by connecting a plurality of solar cells according to any one of claims 1 to 12, or formed by connecting a plurality of laminated cells according to claim 13, and A sealing adhesive film for covering the surface of the battery string, and A cover plate for covering the surface of the sealing adhesive film separated from the battery string, comprising A solar cell module characterized by the above.

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