Thermosetting resin composition, thermosetting sheet, and semiconductor chip coating member

Abstract

To provide a thermosetting sheet or the like capable of suppressing, in a state where at least a part of the semiconductor chip is covered with a semiconductor chip coating layer, chip shift of a semiconductor chip, capable of suppressing voids from remaining, and capable of sufficiently confirming whether there is any inconvenience in the semiconductor chip in which the chip layer is fixed.SOLUTION: A thermosetting sheet according to the present invention is a thermosetting sheet comprising a thermosetting resin and having a semiconductor chip covering layer that is thermoset while covering at least a portion of a semiconductor chip, wherein the semiconductor chip coating layer has a shear elastic modulus of 100 Pa or more and 2000 Pa or less before thermosetting measured under conditions of a temperature of 140°C, a frequency of 10 Hz, and a shear stress of 5000 Pa, and after the thermosetting, the linear transmittance to light with a wavelength of 500 nm is 60% or more and 95% or less.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a thermosetting resin composition, a thermosetting sheet, and a semiconductor chip coating member. More specifically, the present invention relates to a thermosetting resin composition that is thermoset in a state of covering at least a part of a semiconductor chip, a thermosetting sheet including a semiconductor chip coating layer that is thermoset in a state of covering at least a part of a semiconductor chip, and a semiconductor chip coating member including the semiconductor chip coating layer.

Background Art

[0002] In recent years, there has been an increasing demand for higher performance and smaller size in electronic devices. Along with the demand for higher performance and smaller size of such electronic devices, in the semiconductor packages provided in the electronic devices, there has also been an increasing demand for miniaturizing a plurality of semiconductor chips provided in the semiconductor package and for mounting the plurality of semiconductor chips at high density.

[0003] By the way, when miniaturizing and mounting a plurality of semiconductor chips at high density, if each of the plurality of semiconductor chips is individually sealed or wired, the manufacturing process of the semiconductor package becomes complicated and the manufacturing cost increases. In order to solve such problems, in the manufacture of semiconductor packages, it is known to use a thermosetting sheet including a semiconductor chip coating layer (partial sealing agent layer) to collectively seal a plurality of semiconductor chips (for example, Patent Document 1 below). The semiconductor chip coating layer usually contains a thermosetting resin and has a property of curing by heating (a property of thermosetting).

[0004] According to Patent Document 1 below, a semiconductor package is obtained by using a thermosetting sheet including a semiconductor chip coating layer (partial sealing agent layer) as follows, for example.

[0005] (1) First, after attaching the semiconductor chip coating layer (partial encapsulant layer) of the thermosetting sheet to a support (e.g., a glass substrate) via an adhesive layer, a plurality of semiconductor chips are mounted on the semiconductor chip coating layer (chip mounting step). Specifically, a plurality of semiconductor chips with chip electrodes on one side are embedded in the semiconductor chip coating layer until the surface of the chip electrode (the surface on the side not in contact with the semiconductor chip) reaches the surface of the adhesive layer (the surface on the semiconductor chip coating layer side). That is, in a face-down manner, a plurality of semiconductor chips with chip electrodes on one side are embedded in the semiconductor chip coating layer. Note that since the thickness of the semiconductor chip is usually greater than the thickness of the semiconductor chip coating layer, the semiconductor chip is mounted on the semiconductor chip coating layer in a state where not all of it is embedded in the semiconductor chip coating layer and a part of it is exposed. Thereafter, by thermosetting the semiconductor chip coating layer (e.g., by thermosetting at a temperature of 150°C to 185°C), a plurality of semiconductor chips are fixed to the semiconductor chip coating layer. (2) After thermosetting the semiconductor chip coating layer, the semiconductor chip is sealed (molded) using a sealing material (e.g., a resin composition containing a thermosetting resin and a black coloring agent) so as to embed the exposed portion from the semiconductor chip coating layer, and then the sealing material is thermoset (e.g., by thermosetting at a temperature of 150°C to 185°C) (chip sealing step). (3) After thermosetting the sealing material, the semiconductor chip coating layer is removed from the adhesive layer (detach step). That is, the semiconductor chip coating layer having a plurality of semiconductor chips in a state where a part is embedded inside and a part is embedded with a sealing material is removed from the adhesive layer. (4) After removing the semiconductor chip coating layer, for each of the plurality of semiconductor chips with chip electrodes, a wiring structure portion composed of a redistribution layer (RDL) and external electrodes such as bump electrodes (BGA) is provided on the side where the chip electrode is formed (wiring formation step). (5) After providing the wiring structure portion, while fixing the side of the wiring structure portion to the back grind tape, the thermoset encapsulant is ground until the surfaces of the plurality of semiconductor chips opposite to the chip electrode formation surfaces are exposed (thinning process). (6) After peeling off the back grind tape, the plurality of semiconductor chips are singulated by blade dicing or the like (singulation process). As described above, a plurality of semiconductor packages are obtained, each having a wiring structure portion on the chip electrode side and the semiconductor chip encapsulated with an encapsulant. Note that the semiconductor package obtained as described above is electrically connected to a motherboard or the like by soldering at a predetermined temperature (for example, 260°C) to form a semiconductor device.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0007] By the way, in the chip mounting process, the semiconductor chip may not stay at the desired position and may move from the mounted position (chip shift may occur).

[0008] Also, in the semiconductor chip with electrodes, unevenness is formed on the side where the chip electrodes are formed due to the formation of the chip electrodes. In the chip mounting process, voids generated when embedding a plurality of semiconductor chips in the semiconductor chip coating layer in a face-down manner may be trapped in the uneven portions and may remain in the semiconductor chip coating layer. Thus, if voids remain in the semiconductor chip coating layer, moisture in the atmosphere will remain in the voids. During the soldering of the semiconductor package and the motherboard or the like as described above, the degree of volume expansion due to the vaporization of the moisture in the semiconductor package will increase. As a result, the pressure inside the semiconductor package will increase significantly due to this large volume expansion. Consequently, there is a risk of a phenomenon (so-called popcorn phenomenon) in which the semiconductor package is destroyed due to this large pressure increase. That is, there is a risk that the semiconductor package will have poor reliability.

[0009] However, it is difficult to say that sufficient studies have been made on suppressing chip shift of the semiconductor chip and suppressing the remaining voids.

[0010] Also, after the detachment process, it may be necessary to check whether there is any defect in the semiconductor chip fixed to the semiconductor chip coating layer from the side opposite to the side sealed with the sealing material (for example, checking the presence or absence of defects in the embedded state of the semiconductor chip (for example, the presence or absence of voids), the presence or absence of damage on the chip electrode side of the semiconductor chip, etc.). However, it is difficult to say that sufficient studies have been made on a method for sufficiently performing such a check. If the above-mentioned check cannot be sufficiently performed, a semiconductor device using a semiconductor package having a defective semiconductor chip will be obtained. Therefore, in such a semiconductor device, there is a concern that desired characteristics cannot be obtained.

[0011] It is considered that the above problems will similarly occur in a thermosetting resin composition that is thermoset in a state of covering at least a part of the semiconductor chip.

[0012] Therefore, an object of the present invention is to provide a thermosetting resin composition, a thermosetting sheet, and a semiconductor chip coating member that can suppress chip shift of a semiconductor chip and suppress residual voids in a state where at least a part of the semiconductor chip is covered with the thermosetting resin composition or a semiconductor chip coating layer, and can sufficiently confirm whether or not there is a defect in the semiconductor chip fixed with the thermosetting resin composition or the semiconductor chip coating layer.

Means for Solving the Problems

[0013] As a result of intensive studies by the present inventors, the thermosetting resin composition has a shear elastic modulus before thermosetting measured under the conditions of a temperature of 140°C, a frequency of 10 Hz, and a shear stress of 5000 Pa of 100 Pa or more and 2000 Pa or less, and after thermosetting, the linear transmittance for light with a wavelength of 500 nm at a thickness of 50 μm is 60% or more and 95% or less. By setting it in this way, in a state where at least a part of the semiconductor chip is covered with the thermosetting resin composition, it is possible to suppress chip shift of the semiconductor chip and suppress residual voids, and moreover, it has been found that it is possible to sufficiently confirm whether or not there is a defect in the semiconductor chip fixed with the thermosetting resin composition. Further, in a thermosetting sheet provided with a semiconductor chip coating layer, when the semiconductor chip coating layer has a shear elastic modulus before thermosetting measured under the conditions of a temperature of 140°C, a frequency of 10 Hz, and a shear stress of 5000 Pa of 100 Pa or more and 2000 Pa or less, and after thermosetting, the linear transmittance for light with a wavelength of 500 nm is 60% or more and 95% or less, in a state where at least a part of the semiconductor chip is covered with the semiconductor chip coating layer, it is possible to suppress chip shift of the semiconductor chip and suppress residual voids, and moreover, it has been found that it is possible to sufficiently confirm whether or not there is a defect in the semiconductor chip fixed with the semiconductor chip coating layer. And the present invention has been conceived.

[0014] That is, the thermosetting resin composition according to the present invention is A thermosetting resin composition containing a thermosetting resin and thermoset in a state covering at least a part of a semiconductor chip, the thermosetting Resin composition has a shear modulus before thermosetting measured under the conditions of a temperature of 140 ° C, a frequency of 10 Hz, and a shear stress of 5000 Pa of 100 Pa or more and 2000 Pa or less, and after thermosetting, the linear transmittance with respect to light having a wavelength of 500 nm at a thickness of 50 μm is 60% or more and 95% or less 。

[0015] According to such a configuration, since the shear modulus before thermosetting of the thermosetting resin composition measured under the conditions of a temperature of 140 ° C, a frequency of 10 Hz, and a shear stress of 5000 Pa is 100 Pa or more and 2000 Pa or less, in a state where at least a part of the semiconductor chip is covered with the thermosetting resin composition, chip shift of the semiconductor chip can be suppressed and the remaining voids can be suppressed. In addition, since the linear transmittance of the thermosetting resin composition with respect to light having a wavelength of 500 nm at a thickness of 50 μm is 60% or more and 95% or less, it is possible to sufficiently confirm whether or not there is a defect in the semiconductor chip fixed with the thermosetting resin composition.

[0016] In the thermosetting resin composition, the thermosetting resin preferably contains an epoxy resin having an epoxy equivalent of 100 or more and 250 or less and a phenol resin having a hydroxyl equivalent of 100 or more and 250 or less.

[0017] According to such a configuration, since it contains an epoxy resin having an epoxy equivalent of 100 or more and 250 or less and a phenol resin having a hydroxyl equivalent of 100 or more and 250 or less, in addition to being able to increase the linear transmittance of the thermosetting resin composition after curing, it is possible to suppress a decrease in the tensile modulus at 200 ° C of the thermosetting resin composition after curing. As a result, the stress relaxation property of the thermosetting resin composition after curing can be enhanced, and warping of the thermosetting resin composition can be suppressed.

[0018] In the thermosetting resin composition, It is preferable that the thermosetting resin contains 20% by mass or more and 40% by mass or less of the epoxy resin and 20% by mass or more and 40% by mass or less of the phenolic resin.

[0019] According to such a configuration, in addition to being able to further increase the linear transmittance of the thermosetting resin composition after curing, the stress relaxation property of the thermosetting resin composition after curing can be further enhanced, and warping of the thermosetting resin composition can be further suppressed.

[0020] In the thermosetting resin composition, It is preferable to contain 20% by mass or more and 40% by mass or less of an acrylic resin.

[0021] According to such a configuration, since it contains 20% by mass or more and 40% by mass or less of an acrylic resin, in addition to being able to further increase the linear transmittance of the thermosetting resin composition after curing, the stress relaxation property of the thermosetting resin composition after curing can be further enhanced, and warping of the thermosetting resin composition can be further suppressed.

[0022] In the thermosetting resin composition, It is preferable that the acrylic resin has a mass average molecular weight of 50,000 or more and 500,000 or less.

[0023] According to such a configuration, the thermosetting resin composition has appropriate deformability (fluidity), so that it is easier to cover at least a part of the semiconductor chip with the thermosetting resin composition. In addition, in a state where at least a part of the semiconductor chip is covered with the thermosetting resin composition, chip shift of the semiconductor chip can be further suppressed.

[0024] In the thermosetting resin composition, It is preferable that the inorganic filler has an average particle diameter of 10 nm or more and 100 nm or less and is contained in an amount of 10% by mass or more and 30% by mass or less.

[0025] According to such a configuration, the thermosetting resin composition has appropriate deformability (fluidity), so that it becomes easier to cover at least a part of the semiconductor chip with the thermosetting resin composition. In addition, in a state where at least a part of the semiconductor chip is covered with the thermosetting resin composition, chip shift of the semiconductor chip can be further suppressed. In addition, it is possible to suppress a decrease in the linear transmittance of the thermosetting resin composition after curing.

[0026] The semiconductor chip covering member according to the present embodiment includes a support and a semiconductor chip covering layer attached on the support via an adhesive layer. The semiconductor chip covering layer is formed of any one of the thermosetting resins.

[0027] According to such a configuration, in a state where at least a part of the semiconductor chip is covered with the semiconductor chip covering layer, chip shift of the semiconductor chip can be suppressed and the remaining voids can be suppressed. In addition, it is possible to sufficiently confirm whether or not there is a defect in the semiconductor chip fixed by the semiconductor chip covering layer.

[0028] The thermosetting sheet according to the present embodiment is a thermosetting sheet including a thermosetting resin and having a semiconductor chip covering layer that is thermoset in a state of covering at least a part of the semiconductor chip. The semiconductor chip covering layer has a shear modulus of elasticity before thermosetting measured under the conditions of a temperature of 140°C, a frequency of 10 Hz, and a shear stress of 5000 Pa of 100 Pa or more and 2000 Pa or less, and after thermosetting, the linear transmittance with respect to light having a wavelength of 500 nm is 60% or more and 95% or less.

[0029] According to such a configuration, since the shear modulus before thermosetting measured under the conditions of a temperature of 140°C, a frequency of 10 Hz, and a shear stress of 5000 Pa of the semiconductor chip coating layer is 100 Pa or more and 2000 Pa or less, in a state where at least a part of the semiconductor chip is covered with the semiconductor chip coating layer, the chip shift of the semiconductor chip can be suppressed and the remaining voids can be suppressed. In addition, since the linear transmittance of the semiconductor chip coating layer with respect to light having a wavelength of 500 nm is 60% or more and 95% or less after thermosetting, it is possible to sufficiently confirm whether or not there is a defect in the semiconductor chip fixed by the semiconductor chip coating layer.

[0030] In the thermosetting sheet, It is preferable that the thermosetting resin contains an epoxy resin having an epoxy equivalent of 100 or more and 250 or less and a phenol resin having a hydroxyl equivalent of 100 or more and 250 or less.

[0031] According to such a configuration, since it contains an epoxy resin having an epoxy equivalent of 100 or more and 250 or less and a phenol resin having a hydroxyl equivalent of 100 or more and 250 or less, in addition to being able to increase the linear transmittance of the semiconductor chip coating layer after curing, it is possible to suppress a decrease in the tensile modulus at 200°C of the semiconductor chip coating layer after curing. As a result, the stress relaxation property of the semiconductor chip coating layer after curing can be enhanced, and warping of the semiconductor chip coating layer can be suppressed.

[0032] In the thermosetting sheet, It is preferable that the thermosetting resin contains 20% by mass or more and 40% by mass or less of the epoxy resin and 20% by mass or more and 40% by mass or less of the phenol resin.

[0033] According to such a configuration, in addition to being able to further increase the linear transmittance of the semiconductor chip coating layer after curing, the stress relaxation property of the semiconductor chip coating layer after curing can be further enhanced, and warping of the semiconductor chip coating layer can be further suppressed.

[0034] In the thermosetting sheet, it is preferable to contain 20% by mass or more and 40% by mass or less of an acrylic resin.

[0035] According to such a configuration, since the acrylic resin is contained in an amount of 20% by mass or more and 40% by mass or less, in addition to being able to further increase the linear transmittance of the semiconductor chip coating method after curing, the stress relaxation property of the semiconductor chip coating layer after curing can be further enhanced, and the occurrence of warping in the semiconductor chip coating layer can be further suppressed.

[0036] In the thermosetting sheet, it is preferable that the acrylic resin has a mass average molecular weight of 50,000 or more and 500,000 or less.

[0037] According to such a configuration, the semiconductor chip coating layer has appropriate deformability (fluidity), so that it becomes easier to cover at least a part of the semiconductor chip with the semiconductor chip coating layer, and in addition, in a state where at least a part of the semiconductor chip is covered with the semiconductor chip coating layer, chip shift of the semiconductor chip can be further suppressed.

[0038] In the thermosetting sheet, it is preferable to contain 10% by mass or more and 30% by mass or less of an inorganic filler having an average particle diameter of 10 nm or more and 100 nm or less.

[0039] According to such a configuration, the semiconductor chip coating layer has appropriate deformability (fluidity), so that it becomes easier to cover at least a part of the semiconductor chip with the semiconductor chip coating layer, and in addition, in a state where at least a part of the semiconductor chip is covered with the semiconductor chip coating layer, chip shift of the semiconductor chip can be further suppressed.

[0040] The semiconductor chip fixing member according to the present embodiment includes a support A semiconductor chip coating layer attached onto the support via an adhesive layer, and the semiconductor chip coating layer is the semiconductor chip coating layer of any one of the thermosetting sheets.

[0041] According to such a configuration, in a state where at least a part of the semiconductor chip is covered with the semiconductor chip coating layer, chip shift of the semiconductor chip can be suppressed, and residual voids can be suppressed. In addition, it is possible to sufficiently confirm whether or not there is a defect in the semiconductor chip fixed by the semiconductor chip coating layer.

Advantages of the Invention

[0042] According to the present invention, in a state where at least a part of the semiconductor chip is covered with a thermosetting resin composition or a semiconductor chip coating layer, chip shift of the semiconductor chip can be suppressed, residual voids can be suppressed, and moreover, it is possible to sufficiently confirm whether or not there is a defect in the semiconductor chip fixed by the thermosetting resin composition or the semiconductor chip coating layer. A thermosetting resin composition, a thermosetting sheet, and a semiconductor chip coating member can be provided.

Brief Description of the Drawings

[0043]

Figure 1

Figure 2

Figure 3A

Figure 3B

Figure 3C

Figure 3D

Figure 3E

Figure 3F

Figure 3G

Figure 3H

Figure 4

Figure 5

Mode for Carrying Out the Invention

[0044] Hereinafter, an embodiment of the present invention will be described.

[0045] (Thermosetting resin composition) The thermosetting resin composition according to the present embodiment is a thermosetting resin composition that contains a thermosetting resin and is thermoset in a state of covering at least a part of the semiconductor chip. The thermosetting resin composition according to the present embodiment has a shear modulus of elasticity before thermosetting measured under the conditions of a temperature of 140°C, a frequency of 10 Hz, and a shear stress of 5000 Pa in the range of 100 Pa or more and 2000 Pa or less. The thermosetting resin composition according to the present embodiment has a linear transmittance of 60% or more and 95% or less with respect to light having a wavelength of 500 nm at a thickness of 50 μm after thermosetting. The thermosetting resin composition according to the present embodiment is used for manufacturing a semiconductor package. More specifically, in the chip mounting process in the method for manufacturing a semiconductor package, the thermosetting resin composition is applied onto an adhesive layer attached to a support (for example, a glass substrate), and a plurality of semiconductor chips are mounted on the applied thermosetting resin composition for use. In this specification, after thermosetting means after heating the thermosetting resin composition (or the thermosetting sheet described later) at 120°C for 1 hour and then further heating at 150°C for 3 hours.

[0046] For the thermosetting resin composition according to this embodiment, it is more preferable that the shear modulus before thermosetting measured under the conditions of a temperature of 140°C, a frequency of 10 Hz, and a shear stress of 5000 Pa is 100 Pa or more and 1000 Pa or less. For the thermosetting resin composition according to this embodiment, it is more preferable that after thermosetting, the linear transmittance for light with a wavelength of 500 nm at a thickness of 50 μm is 70% or more and 95% or less.

[0047] Regarding the reason why the thermosetting resin composition according to this embodiment can suppress the chip shift of the semiconductor chip and the remaining voids in a state where at least a part of the semiconductor chip is covered, the inventors of the present invention speculate as follows.

[0048] When covering at least a part of the semiconductor chip with the thermosetting resin composition, in order to easily cover the semiconductor chip, it is preferable that the thermosetting resin composition has high deformability (fluidity) before thermosetting. That is, it is preferable that the thermosetting resin composition has a low shear modulus before thermosetting. On the other hand, if the deformability (fluidity) of the thermosetting resin composition is too high, in other words, if the shear modulus is too low, when covering at least a part of the semiconductor chip with the thermosetting resin composition, in the thermosetting resin composition, the semiconductor chip is likely to be displaced from the desired position (chip shift is likely to occur). Therefore, it is not preferable to increase the deformability (fluidity) of the thermosetting resin composition too much. In addition, if the deformability (fluidity) of the thermosetting resin composition becomes too low before heat curing, in other words, if the shear modulus of the thermosetting resin composition becomes too high, the thermosetting resin composition will have poor deformability (fluidity), and the bubbles contained in the thermosetting resin composition will be difficult to move in the thermosetting resin composition (difficult to be discharged from the thermosetting resin composition to the outside) and will tend to remain in the thermosetting resin composition (will tend to remain). As a result, it is believed that voids will be formed in the thermosetting resin composition. In particular, when the semiconductor chip is covered with the thermosetting resin composition in a face-down manner, the chip electrodes form unevenness on the surface of the electrode-equipped semiconductor chip, and it is thought that the air bubbles are more likely to remain in these uneven parts. Therefore, in such a case, it is believed that the number of bubbles remaining in the thermosetting resin composition increases (more voids are formed).

[0049] However, the thermosetting resin composition of this embodiment has a shear modulus before thermal curing measured under conditions of a temperature of 140°C, a frequency of 10 Hz, and a shear stress of 5000 Pa in the range of 100 Pa or more and 2000 Pa or less, so that the deformability is neither too high nor too low, and it is considered to be an appropriate value that can achieve both the suppression of chip shift of the semiconductor chip and the suppression of residual voids. As a result, the inventors infer that the thermosetting resin composition of this embodiment, when covering at least a portion of the semiconductor chip, can suppress chip shift of the semiconductor chip and also suppress residual voids.

[0050] In addition, the thermosetting resin composition according to the present embodiment has a linear transmittance of 60% or more and 95% or less with respect to light having a wavelength of 500 nm at a thickness of 50 μm after thermosetting, and has high transparency (high light transmittance). Therefore, after the detachment step, it is possible to confirm whether or not there is a defect in the semiconductor chip fixed to the thermosetting resin composition from the side opposite to the side sealed with the sealing material (for example, the presence or absence of a defect in the embedded state of the semiconductor chip (for example, the presence or absence of voids), the presence or absence of damage on the chip electrode side of the semiconductor chip, etc.).

[0051] In the thermosetting resin composition according to the present embodiment, the shear modulus before thermosetting measured under the conditions of a temperature of 140°C, a frequency of 10 Hz, and a shear stress of 5000 Pa can be measured under the following conditions using a rheometer (manufactured by HAAKE, trade name: MARSIII). · Sample size: 8 mmφ · Temperature: 140°C (constant) · Frequency: 10 Hz · Measurement mode: Stress-dependent mode (set the number of steps to 40 from 1 Pa to 10000 Pa, change the shear stress, and read the indicated value at a shear stress of 5000 Pa)

[0052] In the thermosetting resin composition according to the present embodiment, the linear transmittance with respect to light having a wavelength of 500 nm at a thickness of 50 μm can be obtained by measuring the transmittance (absorbance) spectrum in the wavelength range including 500 nm for a sample with a thickness of 50 μm using the film unit of an ultraviolet-visible near-infrared spectrophotometer (manufactured by JASCO Corporation, trade name: V-670) and calculating the linear transmittance. The linear transmittance of the semiconductor chip coating layer can be measured by sampling the thermoset semiconductor chip coating layer itself. When the measured values vary depending on the location in one sample, multiple measurements can be carried out, and the linear transmittance can be obtained by the arithmetic mean excluding the measured values that are considered to be abnormal values.

[0053] The shear modulus before thermosetting measured under the conditions of a temperature of 140°C, a frequency of 10 Hz, and a shear stress of 5000 Pa can be adjusted by adjusting the blending amount of the thermosetting resin or appropriately selecting the type of the thermosetting resin. Also, when the thermosetting resin composition contains a thermoplastic resin or an inorganic filler in addition to the thermosetting resin, it can be adjusted by appropriately adjusting the blending ratio of each of these components. Furthermore, when the thermosetting resin composition contains a thermosetting catalyst, it can be adjusted by adjusting the number of addition parts of the thermosetting catalyst or appropriately selecting the type of the thermosetting catalyst. Also, after thermosetting, the linear transmittance with respect to light having a wavelength of 500 nm at a thickness of 50 μm can be adjusted by using a resin with high transparency (high light transmittance) (for example, a thermosetting acrylic resin) as the thermosetting resin. In addition, when the thermosetting resin composition contains a thermoplastic resin or an inorganic filler in addition to the thermosetting resin, as the thermoplastic resin, an acrylic resin with high transparency (light transmittance) can be used, or as the inorganic filler, a nanofiller (an inorganic filler with an average particle size on the order of nanometers) that can suppress a decrease in transparency (light transmittance) can be used for adjustment.

[0054] The thermosetting resin composition according to the present embodiment preferably has a shear viscosity at 150°C of 300 Pa·s or more and 2000 Pa·s or less, and more preferably 500 Pa·s or more and 1000 Pa·s or less. When the shear viscosity at 150°C is within the above numerical range, the thermosetting resin composition has appropriate deformability (fluidity), so in addition to making it easier to cover at least a part of the semiconductor chip with the thermosetting resin composition, when at least a part of the semiconductor chip is covered with the thermosetting resin composition, the chip shift of the semiconductor chip can be further suppressed.

[0055] The shear viscosity at 150 °C can be evaluated using a rheometer (manufactured by Thermo Fisher Scientific, a rotational rheometer, HAAKE MARS). Specifically, it can be obtained by reading the indicated value at 150 °C when the temperature is raised from 30 °C to 180 °C under the conditions of a sample size of 8 mmφ, a Gap of 250 μm, a strain of 0.1%, and a heating rate of 10 °C / min.

[0056] Examples of the thermosetting resin include epoxy resins, phenol resins, amino resins, unsaturated polyester resins, polyurethane resins, silicone resins, thermosetting polyimide resins, thermosetting acrylic resins, and the like. The thermosetting resin composition according to this embodiment may contain only one kind of the above-described thermosetting resins, or may contain two or more kinds. The thermosetting resin composition according to this embodiment preferably contains an epoxy resin and a phenol resin as the thermosetting resin.

[0057] Examples of the epoxy resin include bifunctional epoxy resins and polyfunctional epoxy resins such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, brominated bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin, bisphenol AF type epoxy resin, biphenyl type epoxy resin, naphthalene type epoxy resin, fluorene type epoxy resin, phenol novolac type epoxy resin, orthocresol novolac type epoxy resin, trishydroxyphenylmethane type epoxy resin, and tetraphenylol ethane type epoxy resin. Examples of the epoxy resin also include dicyclopentadiene type epoxy resin, hydantoin type epoxy resin, tris glycidyl isocyanurate type epoxy resin, and glycidylamine type epoxy resin.

[0058] The thermosetting resin composition according to this embodiment preferably contains a tris(hydroxyphenyl)methane type epoxy resin or a dicyclopentadiene type epoxy resin as the epoxy resin. Examples of commercially available products of the tris(hydroxyphenyl)methane type epoxy resin include the product named "EPPN 501HY" manufactured by Nippon Kayaku Co., Ltd., and examples of commercially available products of the dicyclopentadiene type epoxy resin include the product named "HP-7200L" manufactured by DIC Corporation.

[0059] The phenolic resin acts as a curing agent for the epoxy resin. Examples of the phenolic resin include novolak type phenolic resins such as phenolic novolak resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, and nonylphenol novolak resin. In addition, examples of the phenolic resin also include resol type phenolic resins, biphenyldimethylene type phenolic resins, and polyoxystyrenes such as poly(p-oxystyrene).

[0060] The thermosetting resin composition according to this embodiment preferably contains a phenolic novolak resin or a biphenyldimethylene type phenolic resin as the phenolic resin. Examples of commercially available products of the phenolic novolak resin include the product named "MEH-8000H" manufactured by Meiwafosis Co., Ltd. and the product named "LVR8210-DL" manufactured by Gunei Chemical Industry Co., Ltd., and examples of commercially available products of the biphenyldimethylene type phenolic resin include the product named "MEHC-7851SS" manufactured by Meiwafosis Co., Ltd. Note that "MEH-8000H" is an allylphenolic novolak (phenolic novolak having an allyl group).

[0061] The thermosetting resin composition according to this embodiment preferably contains, as the thermosetting resin, an epoxy resin having an epoxy equivalent of 100 or more and 250 or less and a phenolic resin having a hydroxyl equivalent of 100 or more and 250 or less. By including an epoxy resin having an epoxy equivalent of 100 or more and 250 or less and a phenol resin having a hydroxyl equivalent of 100 or more and 250 or less, in addition to being able to increase the linear transmittance of the thermosetting resin composition after curing, it is possible to suppress a decrease in the tensile elastic modulus at 200 °C of the thermosetting resin composition after curing. As a result, the stress relaxation property of the thermosetting resin composition after curing can be enhanced, and warping of the thermosetting resin composition can be suppressed. The thermosetting resin composition according to the present embodiment preferably contains 20% by mass or more and 40% by mass or less of an epoxy resin having an epoxy equivalent of 100 or more and 250 or less, and 20% by mass or more and 40% by mass or less of a phenol resin having a hydroxyl equivalent of 100 or more and 250 or less. By containing 20% by mass or more and 40% by mass or less of an epoxy resin having an epoxy equivalent of 100 or more and 250 or less, and 20% by mass or more and 40% by mass or less of a phenol resin having a hydroxyl equivalent of 100 or more and 250 or less, in addition to being able to further increase the linear transmittance of the thermosetting resin composition after curing, the stress relaxation property of the thermosetting resin composition after curing can be further enhanced, and warping of the thermosetting resin composition can be further suppressed. In addition, each mass ratio (each blending amount) described in this specification means the mass ratio (blending amount) of each blending component with respect to the value obtained by summing the main components constituting the thermosetting resin composition. The main components constituting the thermosetting resin composition are a thermosetting resin, a thermoplastic resin, and an inorganic filler, and do not include a thermosetting catalyst or other components. Further, the epoxy equivalent of the epoxy resin is more preferably 150 or more and 200 or less, and the hydroxyl equivalent of the phenol resin is more preferably 100 or more and 150 or less. Furthermore, the thermosetting resin composition according to the present embodiment more preferably contains a total of 50 parts by mass or more and 60 parts by mass or less of an epoxy resin having an epoxy equivalent of 100 or more and 250 or less and a phenol resin having a hydroxyl equivalent of 100 or more and 250 or less. In addition, the units of the epoxy equivalent and the hydroxyl equivalent are g / eq.

[0062] The thermosetting resin composition according to this embodiment preferably contains a thermoplastic resin in addition to the thermosetting resin as a resin component. In the thermosetting resin composition according to this embodiment, the thermoplastic resin functions as a binder. Examples of the thermoplastic resin include acrylic resins, natural rubbers, butyl rubbers, isoprene rubbers, chloroprene rubbers, ethylene-vinyl acetate copolymers, ethylene-acrylic acid copolymers, ethylene acrylate ester copolymers, polybutadiene resins, polycarbonate resins, thermoplastic polyimide resins, polyamide resins such as polyamide 6 and polyamide 6,6, phenoxy resins, saturated polyester resins such as polyethylene terephthalate and polybutylene terephthalate, polyamideimide resins, and fluororesins. The thermosetting resin composition according to this embodiment may contain only one of the above-mentioned thermoplastic resins or may contain two or more thereof. Among these thermoplastic resins, it is preferable to use an acrylic resin because of its high transparency (high light transmittance), low ionic impurities, and high heat resistance.

[0063] The acrylic polymer constituting the acrylic resin preferably contains the monomer unit derived from (meth)acrylic acid ester in the largest mass ratio. Examples of the (meth)acrylic acid ester include (meth)acrylic acid alkyl ester, (meth)acrylic acid cycloalkyl ester, and (meth)acrylic acid aryl ester. Examples of the (meth)acrylic acid alkyl ester include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, isopropyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, s-butyl (meth)acrylate, t-butyl (meth)acrylate, pentyl (meth)acrylate, isopentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, octyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate, isodecyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, hexadecyl (meth)acrylate, octadecyl (meth)acrylate, and eicosyl (meth)acrylate. Examples of the (meth)acrylic acid cycloalkyl ester include cyclopentyl (meth)acrylate and cyclohexyl (meth)acrylate. Examples of the (meth)acrylic acid aryl ester include phenyl (meth)acrylate and benzyl (meth)acrylate. The monomer unit may be composed of only one of the above-described (meth)acrylic acid esters, or may be composed of two or more thereof. Further, the acrylic polymer can be obtained by polymerizing a raw material monomer for forming the same. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization.

[0064] The acrylic polymer may contain monomer units derived from one or more other monomers copolymerizable with the (meth)acrylic acid ester in order to modify the cohesive force and heat resistance. Examples of the other monomer include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphate group-containing monomers, acrylamide, and acrylonitrile. Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, and (4-hydroxymethylcyclohexyl)methyl (meth)acrylate. Examples of the epoxy group-containing monomer include glycidyl (meth)acrylate and methyl glycidyl (meth)acrylate. Examples of the sulfonic acid group-containing monomer include styrene sulfonic acid, allyl sulfonic acid, 2-(meth)acrylamide-2-methylpropane sulfonic acid, (meth)acrylamide propane sulfonic acid, and (meth)acryloyloxy naphthalene sulfonic acid. Examples of the phosphate group-containing monomer include 2-hydroxyethyl acryloyl phosphate.

[0065] The thermosetting resin composition according to this embodiment preferably contains 20% by mass or more and 40% by mass or less of an acrylic resin. By containing 20% by mass or more and 40% by mass or less of the acrylic resin, in addition to being able to further increase the linear transmittance of the thermosetting resin composition after curing, the stress relaxation property of the thermosetting resin composition after curing can be further enhanced, and the occurrence of warpage in the thermosetting resin composition can be further suppressed. Furthermore, it is more preferable that the thermosetting resin composition according to this embodiment contains 20% by mass or more and 30% by mass or less of the acrylic resin.

[0066] The acrylic resin preferably has a mass average molecular weight of 50,000 or more and 500,000 or less. Since the mass average molecular weight is 50,000 or more and 500,000 or less, in addition to making it easier to cover at least a part of the semiconductor chip with the thermosetting resin composition, in a state where at least a part of the semiconductor chip is covered with the thermosetting resin composition, chip shift of the semiconductor chip can be further suppressed. It is more preferable that the acrylic resin has a mass average molecular weight of 50,000 or more and 300,000 or less.

[0067] The mass average molecular weight of the acrylic resin can be measured by the GPC (gel permeation chromatography) method. The measurement by the GPC method can be performed by adopting the following conditions using HLC-8220GPC manufactured by Tosoh Corporation as an analyzer for the measurement sample prepared according to the following procedure.

[0068] [Preparation of measurement sample] Prepare by dissolving the acrylic resin in tetrahydrofuran (THF) so that the concentration becomes 1.0 g / L.

[0069] [Measurement conditions] · Column: One TSKgel quaudcolumn SuperHZ-L (hereinafter referred to as the first column) manufactured by Tosoh Corporation, and Two TSKgel SuperHZM-M (hereinafter referred to as the second column) manufactured by Tosoh Corporation Each of the above columns is arranged in the analyzer so that the two second columns are connected in series on the downstream side of the first column and the eluent described later flows in from the first column side. · Column temperature: 40 °C · Eluent: Tetrahydrofuran (THF) · Flow rate: Sample pump flow rate 0.3 mL / min Reference pump flow rate 1.0 mL / min · Injection volume: 10 μL · Detector: Differential refractive index detector (RI)

[0070] Also, based on the results of measurement of the measurement sample, in order to obtain a molecular weight distribution curve (differential molecular weight distribution curve), each standard polystyrene manufactured by Tosoh Corporation was weighed so as to have the compounding masses shown in Table 1 below. Each of the weighed standard polystyrenes was dissolved in 100 mL of THF to obtain a standard polystyrene solution STD1 and a standard polystyrene solution STD2. For these as well, GPC measurement was performed under the above measurement conditions using the above measurement apparatus.

[0071]

Table 1

[0072] The results of GPC measurement of the measurement sample, the STD1, and the STD2 are subjected to data analysis using the analysis software GPC-8020 Model II (Data Management Version 5.10) manufactured by Tosoh Corporation. In the data analysis using the above analysis software, first, calibration curves (calibration curves with the horizontal axis being time (min) and the vertical axis being the logarithm of the mass average molecular weight) for the STD1 and the STD2 are created, and based on these calibration curves, data analysis regarding the molecular weight of the measurement sample is performed. The data analysis regarding the molecular weight of the measurement sample is performed after obtaining a molecular weight distribution curve for the peak P1 (the peak on the highest molecular weight side) that is detected earliest on the chromatogram. By performing data analysis on the molecular weight distribution curve for peak P1, the mass average molecular weight Mw of peak P1 (that is, the mass average molecular weight Mw of the acrylic resin) can be obtained. In addition, when an overlap is recognized between the descending part of the earliest detected peak P1 and the ascending part of the peak P2 detected next to the peak P1, a baseline is drawn so as to extend horizontally from the starting part of the ascent of the peak P1, and a line is drawn vertically from the baseline toward the valley part (the most concave part) generated between the descending part of the peak P1 and the ascending part of the peak P2. By analyzing the region delimited by the part from the starting part of the ascent of the peak P1 to the valley part, the baseline, and the line drawn vertically from the baseline toward the valley part, the mass average molecular weight Mw (that is, the mass average molecular weight of the acrylic resin) can be obtained for the peak P1.

[0073] The thermosetting resin composition according to the present embodiment preferably contains an inorganic filler having an average particle size of 10 nm or more and 100 nm or less. That is, the thermosetting resin composition according to the present embodiment preferably contains a nanofiller as the inorganic filler. Also, the thermosetting Resin composition preferably contains 10% by mass or more and 30% by mass or less of an inorganic filler having an average particle size of 10 nm or more and 100 nm or less. By containing 10% by mass or more and 30% by mass or less of an inorganic filler having an average particle size of 10 nm or more and 100 nm or less, the thermosetting resin composition has appropriate deformability (fluidity). In addition to making it easier to cover at least a part of the semiconductor chip with the thermosetting resin composition, in a state where at least a part of the semiconductor chip is covered with the thermosetting resin composition, the chip shift of the semiconductor chip can be further suppressed. Also, it is possible to suppress a decrease in the linear transmittance of the thermosetting resin composition after curing. The average particle size of the inorganic filler is more preferably 10 nm or more and 80 nm or less. Also, the thermosetting resin composition according to the present embodiment more preferably contains 20% by mass or more and 30% by mass or less of an inorganic filler having an average particle size of 10 nm or more and 100 nm or less.

[0074] The average particle diameter of the inorganic filler can be determined by analyzing the SEM image captured using a field emission scanning electron microscope (FE-SEM; for example, the product name "S-4800" manufactured by Hitachi High-Technologies Corporation).

[0075] Specifically, the average particle diameter of the inorganic filler can be determined as follows. (1) The thermosetting resin composition is formed into a sheet with a thickness of 50 μm. (2) The thermosetting resin composition formed into a sheet is heated and carbonized at 750 °C for 30 minutes in a crucible. (3) The sample obtained by carbonization is fixed to a sample stage and subjected to a conductive treatment. An SEM image after the conductive treatment is captured using a field emission scanning electron microscope (for example, the product name "S-4800" manufactured by Hitachi High-Technologies Corporation), and a backscattered electron image is obtained as image data. The imaging conditions are an acceleration voltage of 5 kV and a magnification of 5000 times. (4) The obtained image data is subjected to binarization processing using image analysis software (for example, ImageJ (ImagePro)) so that the inorganic filler can be identified. (5) For all the inorganic fillers appearing in the SEM image, the particle diameter (equivalent circle diameter) is measured, and the average particle diameter of the inorganic filler is determined by calculating the arithmetic mean of the obtained measured values.

[0076] Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, and amorphous silica. The inorganic filler may have various shapes such as spherical, needle-like, and flaky. The thermosetting resin composition according to this embodiment may contain only one type of the above-described inorganic filler or may contain two or more types. The thermosetting resin composition according to this embodiment preferably contains at least one of crystalline silica and amorphous silica among the inorganic fillers as described above. By containing at least one of crystalline silica and amorphous silica, the transparency (light transmittance) of the thermosetting resin composition can be enhanced.

[0077] The thermosetting resin composition according to this embodiment may contain a thermosetting catalyst (curing accelerator) from the viewpoint of promoting the curing reaction of the thermosetting resin or increasing the rate of the curing reaction. Examples of the thermosetting catalyst include imidazole-based compounds, triphenylphosphine-based compounds, amine-based compounds, and trihalogenoborane-based compounds. Examples of the imidazole-based compounds include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2’-methylimidazolyl-(1’)]-ethyl-s-triazine, 2,4-diamino-6-[2’-undecylimidazolyl-(1’)]-ethyl-s-triazine, 2,4-diamino-6-[2’-ethyl-4’-methylimidazolyl-(1’)]-ethyl-s-triazine, 2,4-diamino-6-[2’-methylimidazolyl-(1’)]-ethyl-s-triazine isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole. Examples of the triphenylphosphine-based compounds include tris(triphenylphosphine), tris(butylphosphine), tri(p-methylphenyl)phosphine, tri(nonylphenyl)phosphine, diphenyltolylphosphine, tetraphenylphosphonium bromide, methyltriphenylphosphonium, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium, and benzyltriphenylphosphonium chloride. Note that the triphenylphosphine-based compounds include compounds containing both a triphenylphosphine structure and a triphenylborane structure. Examples of the compounds containing both a triphenylphosphine structure and a triphenylborane structure include tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-triborate, benzyltriphenylphosphonium tetraphenylborate, and triphenylphosphine triphenylborane. Examples of the amine-based compounds include monoethanolamine trifluoroborate and dicyandiamide diamide. The thermosetting resin composition according to the present embodiment may contain only one of the above-described thermosetting catalysts or may contain two or more thereof. Among the above-described thermosetting catalysts, the thermosetting resin composition according to the present embodiment preferably contains an imidazole-based compound. Examples of commercially available products of the imidazole-based compound include the product name "2PHZ-PW" manufactured by Shikoku Kaseihin Co., Ltd. The thermosetting resin composition according to the present embodiment preferably contains 0.1 part by mass or more and 10 parts by mass or less, more preferably 0.2 part by mass or more and 5 parts by mass or less, and even more preferably 0.3 part by mass or more and 3 parts by mass or less of the above-described thermosetting catalyst with respect to 100 parts by mass of the thermosetting resin.

[0078] The thermosetting resin composition according to the present embodiment may contain one or more other components. Examples of the other components include a flame retardant, a silane coupling agent, and an ion trap agent. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of the silane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. Examples of the ion trap agent include hydrotalcites, bismuth hydroxide, hydrated antimony hydroxide (trade name “IXE-300” etc. manufactured by Toagosei Co., Ltd.), zirconium phosphate with a specific structure (trade name “IXE-100” etc. manufactured by Toagosei Co., Ltd.), magnesium silicate (trade name “Kyoward 600” etc. manufactured by Kyowa Chemical Industry Co., Ltd.), and aluminum silicate (trade name “Kyoward 700” etc. manufactured by Kyowa Chemical Industry Co., Ltd.).

[0079] (Thermosetting sheet) The thermosetting sheet according to this embodiment is a thermosetting sheet that contains a thermosetting resin and has a semiconductor chip coating layer that is thermoset in a state of covering at least a part of the semiconductor chip. The thermosetting sheet according to this embodiment is configured as shown in FIG. 1, for example. Specifically, the thermosetting sheet 1 according to this embodiment includes a first adhesive layer 20a and a second adhesive layer 20b laminated on both surfaces of a base material 10, and a semiconductor chip coating layer 30 laminated on the first adhesive layer 20a. Hereinafter, the thermosetting sheet 1 according to this embodiment will be described with reference to FIG. 1.

[0080] In the thermosetting sheet 1 according to this embodiment, the semiconductor chip coating layer 30 has a shear modulus of elasticity before thermosetting measured under the conditions of a temperature of 140°C, a frequency of 10 Hz, and a shear stress of 5000 Pa that is 100 Pa or more and 2000 Pa or less. In the thermosetting sheet 1 according to this embodiment, the semiconductor chip coating layer 30 has a linear transmittance with respect to light having a wavelength of 500 nm of 60% or more and 95% or less after thermosetting. The thermosetting sheet 1 according to this embodiment is also used for manufacturing a semiconductor package, similarly to the above-described thermosetting resin composition. More specifically, in the chip mounting step in the method for manufacturing a semiconductor package, after mounting a semiconductor chip coating layer 30 on a support (for example, a glass substrate) via a second adhesive layer 20b, it is used to mount a plurality of semiconductor chips on the semiconductor chip coating layer 30.

[0081] Note that the shear modulus before thermosetting measured under the conditions of a temperature of 140°C, a frequency of 10 Hz, and a shear stress of 5000 Pa, and the linear transmittance with respect to light having a wavelength of 500 nm after thermosetting can be adjusted as described in the section on the thermosetting resin composition according to this embodiment.

[0082] In the thermosetting sheet 1 according to this embodiment, it is more preferable that the semiconductor chip coating layer 30 has a shear modulus before thermosetting measured under the conditions of a temperature of 140°C, a frequency of 10 Hz, and a shear stress of 5000 Pa in the range of 100 Pa or more and 1000 Pa or less. In the thermosetting sheet 1 according to this embodiment, it is more preferable that the semiconductor chip coating layer 30 has a linear transmittance with respect to light having a wavelength of 500 nm after thermosetting in the range of 70% or more and 95% or less.

[0083] In the thermosetting sheet 1 according to this embodiment, since the shear modulus before thermosetting measured under the conditions of a temperature of 140°C, a frequency of 10 Hz, and a shear stress of 5000 Pa of the semiconductor chip coating layer 30 is within the above numerical range, in a state where at least a part of the semiconductor chip is covered with the semiconductor chip coating layer 30, the chip shift of the semiconductor chip can be suppressed and the remaining voids can be suppressed. Further, since the linear transmittance with respect to light having a wavelength of 500 nm after thermosetting of the semiconductor chip coating layer 30 is within the above numerical range, it is possible to sufficiently confirm whether or not there is a defect in the semiconductor chip fixed by the semiconductor chip coating layer 30.

[0084] The shear modulus of the semiconductor chip coating layer 30 before thermosetting and the linear transmittance of the semiconductor chip coating layer 30 after thermosetting with respect to light with a wavelength of 500 nm can be measured in the same manner as described in the section on the thermosetting resin according to this embodiment.

[0085] In the thermosetting sheet 1 according to this embodiment, the semiconductor chip coating layer 30 preferably has a shear viscosity at 150°C of 300 Pa·s or more and 2000 Pa·s or less, and more preferably 500 Pa·s or more and 1000 Pa·s or less. When the shear viscosity at 150°C is within the above numerical range, the semiconductor chip coating layer 30 has appropriate deformability (fluidity), so that at least a part of the semiconductor chip can be more easily covered by the semiconductor chip coating layer 30, and in addition, the chip shift of the semiconductor chip can be further suppressed.

[0086] Regarding the semiconductor chip coating layer 30, the shear viscosity at 150°C can be measured in the same manner as described in the section on the thermosetting resin composition according to this embodiment.

[0087] In the thermosetting sheet 1 according to this embodiment, the semiconductor chip coating layer 30 preferably has a tensile storage modulus at 200°C of 50 MPa or more and 300 MPa or less after thermosetting, and more preferably 70 MPa or more and 200 MPa or less after thermosetting. After thermosetting, when the tensile storage modulus at 200°C is within the above numerical range, the stress relaxation property of the semiconductor chip coating layer 30 after curing can be further enhanced, and the occurrence of warping in the semiconductor chip coating layer 30 can be further suppressed. In addition, when the semiconductor chip coating layer 30 is incorporated into the semiconductor package, it is possible to suppress the insufficient package strength.

[0088] The tensile storage modulus of the semiconductor chip coating layer 30 at 200°C after thermosetting can be measured as follows. Specifically, after heating a semiconductor chip coating layer 30 with a length of 40 mm (measured length) and a width of 10 mm at 120°C for 1 hour and then further heating at 150°C for 3 hours for thermosetting, a test piece was prepared. Using a solid viscoelasticity measuring device (for example, model RSAIII, manufactured by Rheometric Scientific), under the conditions of a frequency of 1 Hz, a strain amount of 0.1%, a heating rate of 10°C / min, and a chuck distance of 22.5 mm, the tensile storage elastic modulus of the test piece was measured in the temperature range of -10°C to 285°C. At this time, by reading the value at 200°C, the tensile storage elastic modulus at 200°C can be measured. In addition, the measurement is performed by pulling the test piece in the resin flow direction (MD).

[0089] As the thermosetting resin, the same ones as those described in the section of the thermosetting resin composition according to this embodiment can be used. In the thermosetting sheet 1 according to this embodiment, the semiconductor chip coating layer 30 preferably contains an epoxy resin and a phenol resin, similar to the thermosetting resin composition according to this embodiment. Further, the semiconductor chip coating layer 30 preferably contains a tris(hydroxyphenyl)methane type epoxy resin or a dicyclopentadiene type epoxy resin as the epoxy resin, and preferably contains a phenol novolac resin or a biphenyl dimethylene type phenol resin as the phenol resin.

[0090] In the thermosetting sheet 1 according to this embodiment, the semiconductor chip coating layer 30 preferably contains an epoxy resin with an epoxy equivalent of 100 or more and 250 or less and a phenol resin with a hydroxyl equivalent of 100 or more and 250 or less as the thermosetting resin, similar to the thermosetting resin composition according to this embodiment. By including an epoxy resin having an epoxy equivalent of 100 or more and 250 or less and a phenol resin having a hydroxyl equivalent of 100 or more and 250 or less, in addition to increasing the linear transmittance of the semiconductor chip coating layer 30 after curing, it is possible to suppress a decrease in the tensile elastic modulus at 200°C of the semiconductor chip coating layer 30 after curing. As a result, the stress relaxation property of the semiconductor chip coating layer 30 after curing can be enhanced, and warping of the semiconductor chip coating layer 30 can be suppressed. In the thermosetting sheet 1 according to the present embodiment, it is preferable that the semiconductor chip coating layer 30 contains 20% by mass or more and 40% by mass or less of an epoxy resin having an epoxy equivalent of 100 or more and 250 or less, and 20% by mass or more and 40% by mass or less of a phenol resin having a hydroxyl equivalent of 100 or more and 250 or less. By containing 20% by mass or more and 40% by mass or less of an epoxy resin having an epoxy equivalent of 100 or more and 250 or less, and 20% by mass or more and 40% by mass or less of a phenol resin having a hydroxyl equivalent of 100 or more and 250 or less, in addition to further increasing the linear transmittance of the semiconductor chip coating layer 30 after curing, the stress relaxation property of the semiconductor chip coating layer 30 after curing can be further enhanced, and warping of the semiconductor chip coating layer 30 can be further suppressed. Further, it is more preferable that the epoxy equivalent of the epoxy resin is 150 or more and 200 or less, and it is more preferable that the hydroxyl equivalent of the phenol resin is 100 or more and 150 or less. Furthermore, it is more preferable that the thermosetting sheet 1 according to the present embodiment contains 50 parts by mass or more and 60 parts by mass or less in total of an epoxy resin having an epoxy equivalent of 100 or more and 250 or less and a phenol resin having a hydroxyl equivalent of 100 or more and 250 or less. Note that the units of the epoxy equivalent and the hydroxyl equivalent are g / eq.

[0091] In the thermosetting sheet 1 according to the present embodiment, it is preferable that the semiconductor chip coating layer 30 contains a thermoplastic resin as a resin component in addition to the thermosetting resin. As the thermoplastic resin, the same ones as those described in the section on the thermosetting resin composition according to the present embodiment can be used. In the thermosetting sheet 1 according to the present embodiment, it is preferable that the semiconductor chip coating layer 30 contains an acrylic resin as the thermoplastic resin. As the acrylic resin, the same ones as those described in the section of the thermosetting resin composition according to the present embodiment can be used.

[0092] In the thermosetting sheet 1 according to the present embodiment, it is preferable that the semiconductor chip coating layer 30 contains 20% by mass or more and 40% by mass or less of the acrylic resin. By containing 20% by mass or more and 40% by mass or less of the acrylic resin, in addition to being able to further increase the linear transmittance of the semiconductor chip coating layer 30 after curing, the stress relaxation property of the semiconductor chip coating layer 30 after curing can be further enhanced, and the occurrence of warpage in the semiconductor chip coating layer 30 can be further suppressed. Further, in the thermosetting sheet 1 according to the present embodiment, it is more preferable that the semiconductor chip coating layer 30 contains 20% by mass or more and 30% by mass or less of the acrylic resin.

[0093] It is preferable that the acrylic resin has a mass average molecular weight of 50,000 or more and 500,000 or less. By having a mass average molecular weight of 50,000 or more and 500,000 or less, in addition to making it easier to cover at least a part of the semiconductor chip with the semiconductor chip coating layer, in a state where at least a part of the semiconductor chip is covered with the semiconductor chip coating layer, the chip shift of the semiconductor chip can be further suppressed. It is more preferable that the acrylic resin has a mass average molecular weight of 50,000 or more and 300,000 or less.

[0094] The mass average molecular weight of the acrylic resin can be measured by the same method as described in the section of the thermosetting resin composition according to the present embodiment.

[0095] In the thermosetting sheet 1 according to the present embodiment, the semiconductor chip coating layer 30 preferably contains an inorganic filler having an average particle size of 10 nm or more and 100 nm or less. That is, the semiconductor chip coating layer preferably contains a nanofiller as the inorganic filler. As the inorganic filler, the same ones as those described in the section of the thermosetting resin composition according to the present embodiment can be used. In the thermosetting sheet 1 according to the present embodiment, among the inorganic fillers as described above, the semiconductor chip coating layer 30 preferably contains at least one of crystalline silica and amorphous silica. By containing at least one of crystalline silica and amorphous silica, the transparency (light transmittance) of the semiconductor chip coating layer can be enhanced.

[0096] In the thermosetting sheet 1 according to the present embodiment, the semiconductor chip coating layer 30 preferably contains 10% by mass or more and 30% by mass or less of an inorganic filler having an average particle size of 10 nm or more and 100 nm or less. By containing 10% by mass or more and 30% by mass or less of an inorganic filler having an average particle size of 10 nm or more and 100 nm or less, the semiconductor chip coating layer 30 has appropriate deformability (fluidity). Therefore, in addition to making it easier to cover at least a part of the semiconductor chip with the semiconductor chip coating layer 30, when at least a part of the semiconductor chip is covered with the semiconductor chip coating layer 30, chip shift of the semiconductor chip can be further suppressed. In addition, it is possible to suppress a decrease in the linear transmittance of the semiconductor chip coating layer 30 after curing. The average particle size of the inorganic filler is more preferably 10 nm or more and 80 nm or less. In the thermosetting sheet 1 according to the present embodiment, the semiconductor chip coating layer 30 more preferably contains 20% by mass or more and 30% by mass or less of an inorganic filler having an average particle size of 10 nm or more and 100 nm or less.

[0097] The average particle size of the inorganic filler can be measured by the same method as described in the section of the thermosetting resin composition according to the present embodiment.

[0098] In the thermosetting sheet 1 according to the present embodiment, the semiconductor chip coating layer 30 may contain a thermosetting catalyst (curing accelerator) in order to promote the curing reaction of the thermosetting resin or increase the rate of the curing reaction. As the thermosetting catalyst, the same ones as those described in the section of the thermosetting resin composition according to the present embodiment can be used. In the thermosetting sheet 1 according to the present embodiment, it is preferable that the semiconductor chip coating layer 30 contains an imidazole-based compound as the thermosetting catalyst. In the thermosetting sheet 1 according to the present embodiment, the semiconductor chip coating layer 30 preferably contains 0.2 parts by mass or more and 10 parts by mass or less, more preferably 0.5 parts by mass or more and 5 parts by mass or less, and even more preferably 1 part by mass or more and 3 parts by mass or less of the above-described thermosetting catalyst with respect to 100 parts by mass of the thermosetting resin.

[0099] The thickness of the semiconductor chip coating layer 30 is preferably 1 μm or more and 300 μm or less, more preferably 5 μm or more and 250 μm or less, and even more preferably 10 μm or more and 200 μm or less. Further, the value of the ratio (T / H) of the thickness T of the semiconductor chip coating layer 30 to the height H of the chip electrode in the semiconductor chip with electrodes is preferably 0.1 or more and 10 or less, and more preferably 0.2 or more and 9 or less.

[0100] The base material 10 supports the first adhesive layer 20a and the second adhesive layer 20b. The base material 10 is composed of, for example, a plastic film. Examples of the constituent material of the plastic film include polyvinyl chloride, polyvinylidene chloride, polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenyl sulfide, fluororesin, cellulose-based resin, and silicone resin. Examples of the polyolefin include low density polyethylene (including linear low density polyethylene), medium density polyethylene, high density polyethylene, ultra-low density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, homopolypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate copolymer, ethylene-butene copolymer, and ethylene-hexene copolymer. Examples of the polyester include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polybutylene terephthalate (PBT). When the base material 10 is composed of a plastic film, it may be composed of one kind of constituent material or may be composed of two or more kinds of constituent materials. Further, the base material 10 may have a single layer structure or a multilayer structure. When the base material 10 is composed of a plastic film, the plastic film may be an unstretched film, a uniaxially stretched film, or a biaxially stretched film.

[0101] On both surfaces of the base material 10 (the surface on the side of the first adhesive layer 20a and the surface on the side of the second adhesive layer 20b), for example, physical treatment, chemical treatment, or undercoating treatment may be performed to enhance the adhesion to the first adhesive layer 20a and the second adhesive layer 20b. Examples of the physical treatment include corona treatment, plasma treatment, sand mat processing treatment, ozone exposure treatment, flame exposure treatment, high voltage shock exposure treatment, and ionization radiation treatment. Examples of the chemical treatment include chromic acid treatment.

[0102] From the viewpoint of sufficiently ensuring the strength as a support, the thickness of the base material 10 is preferably 5 μm or more, and more preferably 10 μm or more. In addition, from the viewpoint of ensuring appropriate flexibility, the thickness of the base material 10 is preferably 300 μm or less, and more preferably 200 μm or less.

[0103] As described above, the semiconductor chip coating layer 30 is laminated on the first adhesive layer 20a. That is, the first adhesive layer 20a supports the semiconductor chip coating layer 30. The first adhesive layer 20a contains an adhesive. Examples of the adhesive include a pressure-sensitive adhesive and a radiation-curable adhesive. The first adhesive layer 20a may contain only one type of adhesive or may contain two or more types of adhesives.

[0104] Examples of the pressure-sensitive adhesive include an acrylic polymer as an acrylic adhesive, a rubber-based adhesive, and a silicone-based adhesive. The acrylic polymer as an acrylic adhesive contains a monomer unit derived from a (meth)acrylic acid ester as the most abundant monomer unit by mass ratio. Note that “(meth)acrylic” means at least one of “acrylic” and “methacrylic”.

[0105] Examples of the (meth)acrylic acid ester include hydrocarbon group-containing (meth)acrylic acid esters such as (meth)acrylic acid alkyl esters, (meth)acrylic acid cycloalkyl esters, and (meth)acrylic acid aryl esters. Examples of the (meth)acrylic acid alkyl ester include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, isopropyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, s-butyl (meth)acrylate, t-butyl (meth)acrylate, pentyl (meth)acrylate, isopentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, octyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate, isodecyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, hexadecyl (meth)acrylate, octadecyl (meth)acrylate, and eicosyl (meth)acrylate. Examples of the (meth)acrylic acid cycloalkyl ester include cyclopentyl (meth)acrylate and cyclohexyl (meth)acrylate. Examples of the (meth)acrylic acid aryl ester include phenyl (meth)acrylate and benzyl (meth)acrylate. The monomer unit may be composed of only one kind of the above-mentioned (meth)acrylic acid ester, or may be composed of two or more kinds. In order to appropriately exhibit basic properties such as adhesiveness by the (meth)acrylic acid ester in the acrylic adhesive, the mass ratio of the (meth)acrylic acid ester in all monomer components constituting the acrylic polymer is preferably 40% by mass or more, and more preferably 60% by mass or more.

[0106] The acrylic polymer may contain monomer units derived from one or more other monomers copolymerizable with the (meth)acrylic acid ester in order to modify cohesive force and heat resistance. Examples of the other monomer include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, epoxy group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, and acrylonitrile. Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate, and (4-hydroxymethylcyclohexyl)methyl (meth)acrylate. Examples of the epoxy group-containing monomer include glycidyl (meth)acrylate and methylglycidyl (meth)acrylate. Examples of the sulfonic acid group-containing monomer include styrene sulfonic acid, allyl sulfonic acid, 2-(meth)acrylamide-2-methylpropane sulfonic acid, (meth)acrylamide propane sulfonic acid, and (meth)acryloyloxy naphthalene sulfonic acid. Examples of the phosphate group-containing monomer include 2-hydroxyethyl acryloyl phosphate.

[0107] In order to form a crosslinked structure in the polymer backbone, the acrylic polymer may contain monomer units derived from a polyfunctional monomer copolymerizable with a monomer such as (meth)acrylate. Examples of the polyfunctional monomer include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, polyester (meth)acrylate, and urethane (meth)acrylate. Only one kind of the polyfunctional monomer may be used, or two or more kinds may be used. In order to appropriately exhibit basic properties such as adhesiveness by the (meth)acrylate ester in the acrylic pressure-sensitive adhesive, the mass ratio of the polyfunctional monomer in all monomer components constituting the acrylic polymer is preferably 40% by mass or less, and more preferably 30% by mass or less.

[0108] The acrylic polymer can be obtained by polymerizing raw material monomers for forming the same. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization.

[0109] Although the radiation-curable pressure-sensitive adhesive has the property that its adhesive force decreases by radiation irradiation, it exhibits an adhesive force to such an extent that it can be used in the manufacturing process of semiconductor packages. Examples of the radiation-curable pressure-sensitive adhesive that can be used include an addition-type radiation-curable pressure-sensitive adhesive containing a base polymer such as an acrylic polymer as the acrylic pressure-sensitive adhesive, and a radiation-polymerizable monomer component or oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond. As the acrylic polymer, the same ones as those described above can be used. Examples of the radiation-polymerizable monomer component include trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxy penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and 1,4-butanediol di(meth)acrylate. Examples of the radiation-polymerizable oligomer component include various oligomers such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based oligomers, and those having a molecular weight of about 100 to 30,000 are appropriate. The content of the radiation-polymerizable monomer component and oligomer component in the radiation-curable pressure-sensitive adhesive layer is, for example, 5 parts by mass or more and 500 parts by mass or less, preferably 40 parts by mass or more and 150 parts by mass or less, based on 100 parts by mass of a base polymer such as an acrylic polymer. As the additive-type radiation-curable pressure-sensitive adhesive, for example, those described in JP-A-60-196956 are used.

[0110] Regarding the degree of decrease in adhesive strength due to radiation irradiation in the additive-type radiation-curable pressure-sensitive adhesive, it can be controlled, for example, by adjusting the content of functional groups such as radiation-polymerizable carbon-carbon double bonds and the type and blending amount of the photoinitiator.

[0111] Examples of the radiation-curable pressure-sensitive adhesive include an intrinsic radiation-curable pressure-sensitive adhesive containing a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond in the polymer side chain, in the polymer main chain, or at the polymer main chain terminal. As the base polymer contained in the intrinsic radiation-curable pressure-sensitive adhesive, those having an acrylic polymer as a basic skeleton are preferable. As such an acrylic polymer, the same ones as those described above can be used. Regarding the degree of reduction in adhesive strength due to radiation irradiation in an internal radiation-curable adhesive, it can also be controlled, for example, by adjusting the content of functional groups such as radiation-polymerizable carbon-carbon double bonds, and the type and blending amount of the photoinitiator.

[0112] The radiation-curable adhesive preferably contains a photoinitiator. Examples of the photoinitiator include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, camphorquinone, halogenated ketones, acylphosphine oxides, and acylphosphonates. The type and content of the photoinitiator are selected so as to appropriately control the degree of reduction in adhesive strength due to radiation irradiation.

[0113] As the radiation-curable adhesive, for example, an adhesive of a type that cures by irradiation with electron beams, α-rays, β-rays, γ-rays, or X-rays can be used. The radiation-curable adhesive is particularly preferably an adhesive of a type that also cures by ultraviolet irradiation (ultraviolet-curable adhesive).

[0114] The thickness of the first adhesive layer 20a is preferably 1 μm or more and 50 μm or less.

[0115] In addition to the above components, the first adhesive layer 20a may contain an adhesion promoter, an antioxidant, a colorant, and the like.

[0116] The second adhesive layer 20b is used to attach the thermosetting sheet 1 according to the present embodiment to a support (for example, a glass support) in the chip mounting process in the manufacturing process of the semiconductor package. The second adhesive layer 20b contains an adhesive with reduced adhesive strength. Examples of the adhesive with reduced adhesive strength include a heat-expandable adhesive and a radiation-curable adhesive.

[0117] The heat-expandable pressure-sensitive adhesive contains a pressure-sensitive adhesive main agent and a component that expands or swells upon heating (hereinafter also referred to as a foaming component or a swelling component). When the pressure-sensitive adhesive layer containing the heat-expandable pressure-sensitive adhesive receives sufficient heating of the foaming component or the swelling component, foaming or swelling occurs in the pressure-sensitive adhesive layer, and unevenness occurs on the surface of the pressure-sensitive adhesive layer. As a result, the adhesion area to the adherend is reduced, so that the adhesive force to the adherend is reduced.

[0118] Examples of the pressure-sensitive adhesive main agent include an acrylic polymer as an acrylic pressure-sensitive adhesive, a rubber-based pressure-sensitive adhesive, and a silicone-based pressure-sensitive adhesive. As the acrylic polymer, the same ones as those described above can be used.

[0119] Examples of the foaming component include a foaming agent, and examples of the swelling component include thermally expandable microspheres.

[0120] As the foaming agent, various known inorganic foaming agents and organic foaming agents can be used. Examples of the inorganic foaming agent include ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, etc., and examples of the organic foaming agent include hydrochlorofluorocarbons such as trichloromonofluoromethane and dichloromonofluoromethane, azo compounds such as azobisisobutyronitrile, azodicarbonamide, and barium azodicarboxylate, etc.

[0121] Examples of the thermally expandable microspheres include microspheres having a structure in which a substance that easily gasifies and expands upon heating is enclosed in a shell. Examples of the substance that easily gasifies and expands upon heating include isobutane, propane, and pentane. The thermally expandable microspheres can be obtained by enclosing a substance that easily gasifies and expands upon heating in a shell-forming substance by a coacervation method, an interfacial polymerization method, or the like. Examples of the shell-forming material include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, and polymethyl methacrylate.

[0122] The radiation-curable pressure-sensitive adhesive contained in the second pressure-sensitive adhesive layer 20b is of a type in which the adhesive strength decreases to such an extent that it cannot be used in the manufacturing process of semiconductor packages by radiation irradiation. As such a radiation-curable pressure-sensitive adhesive, the above-described addition-type radiation-curable pressure-sensitive adhesive can be used. As described above, the degree of decrease in adhesive strength due to radiation irradiation in the addition-type radiation-curable pressure-sensitive adhesive can be controlled, for example, by adjusting the content of functional groups such as radiation-polymerizable carbon-carbon double bonds, and the type and blending amount of the photoinitiator.

[0123] The radiation-curable pressure-sensitive adhesive preferably contains a photoinitiator. As the photoinitiator, the above-described ones can be used. The type and content of the photoinitiator are selected so as to appropriately control the degree of decrease in adhesive strength due to radiation irradiation.

[0124] Note that a double-sided pressure-sensitive adhesive tape may be used as the first pressure-sensitive adhesive layer 20a and the second pressure-sensitive adhesive layer 20b.

[0125] The thickness of the second pressure-sensitive adhesive layer 20b is preferably 2 μm or more and 100 μm or less.

[0126] In addition to the above components, the second pressure-sensitive adhesive layer 20b may contain a tackifier, an antioxidant, a colorant, and the like.

[0127] [Semiconductor Chip Coating Member] The semiconductor chip coating member according to the present embodiment includes a support and a semiconductor chip coating layer attached to the support via a pressure-sensitive adhesive layer. In the semiconductor chip coating member according to the present embodiment, the semiconductor chip coating layer is formed of the above-described thermosetting resin composition according to the present embodiment, or is the semiconductor chip coating layer 30 of the above-described thermosetting sheet 1 according to the present embodiment. According to such a configuration, in a state where at least a part of the semiconductor chip is covered with the semiconductor chip coating layer, chip shift of the semiconductor chip can be suppressed and the remaining voids can be suppressed. In addition, it is possible to sufficiently confirm whether or not there is a defect in the semiconductor chip fixed by the semiconductor chip coating layer.

[0128] The semiconductor chip coating member according to the present embodiment is configured, for example, as shown in FIG. 2(a), by attaching the thermosetting sheet 1 according to the present embodiment onto a support 40 with a second adhesive layer 20b. That is, in the example shown in FIG. 2(a), the semiconductor chip coating member 2 according to the present embodiment is configured by attaching the semiconductor chip coating layer 30 onto a support 40 via a first adhesive layer 20a and a second adhesive layer 20b laminated on both surfaces of a base material 10 (via two adhesive layers). Hereinafter, with reference to FIGS. 2(a) and (b), an example of the semiconductor chip coating member 2 according to the present embodiment will be described.

[0129] The semiconductor chip coating member 2 according to the present embodiment is used for manufacturing a semiconductor package. More specifically, in the chip mounting process in the manufacturing process of the semiconductor package, as shown in FIG. 2(b), it is used to mount a plurality of semiconductor chips 50 on the semiconductor chip coating layer 30. In FIG. 2(b), an example of mounting a plurality of semiconductor chips 50 on the semiconductor chip coating layer 30 so as to cover the chip electrode 50a side, that is, an example of mounting a plurality of semiconductor chips 50 on the semiconductor chip coating layer 30 in a face-down manner, is shown. In addition, FIG. 2(b) shows an example in which a plurality of semiconductor chips 50 are mounted on a semiconductor chip coating layer 30 so as to cover a part of the plurality of semiconductor chips 50 (so as to cover the plurality of semiconductor chips 50 from the side where the plurality of semiconductor chips 50 are in contact with the chip electrodes 50a).

[0130] The support 40 supports the semiconductor chip coating layer 30 via the first adhesive layer 20a and the second adhesive layer 20b. The support 40 is, for example, a metal substrate, a glass substrate, or a resin substrate. From the viewpoint of checking whether there are any defects in the plurality of semiconductor chips 50 fixed to the semiconductor chip coating layer 30 from the side opposite to the side sealed with the sealing material after the detachment process (for example, from the viewpoint of checking whether there are any defects in the embedded state of the plurality of semiconductor chips 50 (for example, the presence or absence of voids), the presence or absence of damage on the chip electrode 50a side in the plurality of semiconductor chips 50, etc.), it is preferable that the support 40 has high transparency (high light transmittance). From such a point, it is preferable that the support 40 is a glass substrate or a resin substrate made of a resin with high transparency (high light transmittance) such as an acrylic resin. The support 40 preferably has a linear transmittance of 60% or more and 95% or less with respect to light having a wavelength of 500 nm, and more preferably 70% or more and 95% or less.

[0131] As described above, the thermosetting resin composition and the thermosetting sheet according to the present embodiment are provided as a constituent member of the semiconductor chip coating member 2 and are used in the manufacturing process of semiconductor packages. Therefore, hereinafter, the manufacturing process of a semiconductor package using the semiconductor chip coating member 2 will be described. Hereinafter, taking as an example the configuration in which the semiconductor chip coating member 2 includes the semiconductor chip coating layer 30 of the thermosetting sheet 1 according to the present embodiment as the semiconductor chip coating layer 30 (that is, the configuration shown in FIG. 2), the manufacturing process of the semiconductor package will be described.

[0132] In the process of manufacturing a semiconductor chip, a semiconductor chip with an electrode, on which a chip electrode is attached to one side of the semiconductor chip, is used. In the process of manufacturing a semiconductor chip, a plurality of such semiconductor chips with electrodes are brought into contact with a semiconductor chip covering member from the chip electrode side, and further the semiconductor chips with electrodes are inserted into the semiconductor chip covering member so that at least a part of the semiconductor chips is embedded, and the semiconductor chips are mounted on the semiconductor chip covering part of the semiconductor chip covering member. A chip mounting step, a chip sealing step of sealing (molding) a plurality of semiconductor chips mounted on the semiconductor chip covering part with a sealing material, a detachment step of removing the semiconductor chip covering layer from the adhesive layer (first adhesive layer) of the semiconductor chip covering member, and for each of the plurality of semiconductor chips with electrodes, a wiring forming step of providing a wiring structure portion formed of external electrodes such as a redistribution layer (RDL) and bump electrodes (BGA) on the side where the chip electrode is formed, a thinning step of grinding the sealing material until the surface on the side opposite to the chip electrode forming surface of the plurality of semiconductor chips with electrodes is exposed, and a singulation step of singulating the plurality of semiconductor chips embedded with a space provided in the semiconductor chip covering member by dicing between adjacent semiconductor chips. When these steps are performed, the semiconductor chip covering member 2 according to the present embodiment is used.

[0133] In the chip mounting step, as shown in Fig. 3A, a plurality of semiconductor chips 50 are mounted on the semiconductor chip covering layer 30 of the semiconductor chip covering member 2. Specifically, a plurality of semiconductor chips with electrodes provided with a chip electrode 50a on one surface of the semiconductor chip 50 are embedded in the semiconductor chip covering layer 30 until the surface of the chip electrode 50a (the surface on the side not in contact with the semiconductor chip 50) reaches the surface of the first adhesive layer 20a (the surface on the semiconductor chip covering layer 30 side). That is, the semiconductor chip 50 is embedded in the semiconductor chip covering layer 30 in a face-down manner. As shown in Fig. 3A, in the present embodiment, a plurality of semiconductor chips 50 are embedded in the semiconductor chip covering layer 30 in a state where a part thereof (the side opposite to the side where the chip electrode 50a is attached) is exposed.

[0134] In the chip sealing process, as shown in FIG. 3B, a sealing material is supplied so as to cover a plurality of semiconductor chips 50 exposed from the semiconductor chip coating layer 30 (so as to embed the exposed portions). Thereafter, the sealing material and the semiconductor chip coating layer 30 are thermally cured to form a sealing portion 60, and a package body P is obtained. As the sealing material, for example, a resin composition containing an epoxy resin, a phenolic resin (hardening agent), an inorganic filler, a hardening accelerator, and a black-based colorant is used. In the chip sealing process, the sealing material may be supplied in a liquid composition or powder form to cover the exposed portions of the plurality of semiconductor chips 50, or may cover the exposed portions of the plurality of semiconductor chips 50 in a state of being formed into a sheet shape. As the constituent material of the sealing material, for example, the same materials as those described above can be used as the constituent material of the semiconductor chip coating layer 30. The heating temperature for forming the sealing portion 60 is, for example, 150 to 185°C, and the heating time is, for example, 60 seconds to several hours.

[0135] In this embodiment, an example in which the semiconductor chip coating layer 30 and the sealing material are thermally cured at once is described, but the thermal curing of the semiconductor chip coating layer 30 and the thermal curing of the sealing material may be performed separately. That is, before embedding the exposed portions of the plurality of semiconductor chips 50 with the sealing material, the semiconductor chip coating layer 30 may be thermally cured, and after embedding the exposed portions of the plurality of semiconductor chips 50 with the sealing material, the sealing material may be thermally cured. In this way, after sufficiently fixing the plurality of semiconductor chips 50 with the thermally cured semiconductor chip coating layer 30, the exposed portions can be embedded with the sealing material, so that the semiconductor chips 50 can be prevented from shifting from the desired positions due to thermal shrinkage generated when the sealing material is thermally cured.

[0136] In the detachment process, as shown in Fig. 3C, the support state of the package body P by the support 40 is released. In the detachment process, for example, first, after the thermosetting sheet 1 is removed from the support 40, the package body P is removed from the first adhesive layer 20a. Alternatively, after the package body P is removed from the first adhesive layer 20a, the laminate of the first adhesive layer 20a, the base material 10, and the second adhesive layer 20b is removed from the support 40. When the adhesive contained in the first adhesive layer 20a is a radiation-curable adhesive, ultraviolet rays or radiation is irradiated to reduce the adhesive force at the interface between the first adhesive layer 20a and the semiconductor chip coating layer 30, and the package body P can be removed from the first adhesive layer 20a. When the adhesive contained in the second adhesive layer 20b is a radiation-curable adhesive, ultraviolet rays or radiation is irradiated to reduce the adhesive force at the interface between the second adhesive layer 20b and the support 40, and the support 40 can be removed from the second adhesive layer 20b. When the irradiation is ultraviolet rays, the irradiation amount is, for example, 50 mJ / cm 2 or more and 500 mJ / cm 2 or less. Also, when the adhesive contained in the second adhesive layer 20b is a heat-expandable adhesive, heating can reduce the adhesive force at the interface between the second adhesive layer 20b and the support 40, and the support 40 can be removed from the second adhesive layer 20b. The heating temperature is, for example, 170°C or more and 200°C or less.

[0137] In the chip mounting process, when the chip electrodes 50a of the plurality of semiconductor chips with electrodes do not reach the surface of the first adhesive layer 20a, after the detachment process, grinding for exposing the chip electrodes 50a to the outside is performed on the semiconductor chip coating layer 30.

[0138] In the wiring formation process, as shown in FIG. 3D, for each of the semiconductor chips with electrodes, a wiring structure portion WS composed of a redistribution layer RDL and an external electrode E such as a bump electrode (BGA) is provided on the side where the chip electrode 50a is formed.

[0139] In the thinning process, as shown in FIG. 3E, after a back grind tape 70 is bonded to the wiring structure portion WS side, the sealing portion 60 is ground to thin the package body P. The back grind tape 70 has an adhesive layer 70a with a thickness capable of embedding the wiring structure portion WS. That is, the back grind tape 70 is bonded in a state where the wiring structure portion WS is embedded by the adhesive layer 70a. In the thinning process, for example, grinding is performed on the sealing portion 60 so that the surfaces of the plurality of semiconductor chips 50 opposite to the mounting surfaces of the chip electrodes 50a are exposed.

[0140] After the thinning process, as shown in FIG. 3F, a dicing die bond film 80 is bonded to the side of the package body P where the grinding has been performed. The dicing die bond film 80 includes a dicing tape 80a having an adhesive layer and a die bond layer 80b (a layer having thermosetting properties) laminated on the adhesive layer, and the die bond layer 80b is attached to the side of the package body P where the grinding has been performed. After the dicing die bond film 80 is attached, as shown in FIG. 3G, the back grind tape 70 is peeled off, and the die bond layer 80b of the dicing die bond film 80 is thermally cured, and the package body P is fixed to the die bond layer 80b.

[0141] In the singulation process, as shown in FIG. 3H, for example, by blade dicing, the sealing portion 60 and the wiring structure portion WS are divided for each semiconductor chip 50. In FIG. 3H, the division locations are schematically shown by thick lines. In this way, each singulated semiconductor package is then picked up from the dicing tape 80a.

[0142] In the above manner, the semiconductor package is manufactured.

[0143] Note that the thermosetting resin composition, thermosetting sheet, and semiconductor chip coating member according to the present invention are not limited to the above-described embodiment. Also, the thermosetting resin composition, thermosetting sheet, and semiconductor chip coating member according to the present invention are not limited by the above-described effects. The thermosetting resin composition, thermosetting sheet, and semiconductor chip coating member according to the present invention can be variously modified without departing from the gist of the present invention.

[0144] For example, in the above embodiment, an example in which the thermosetting sheet 1 includes the first adhesive layer 20a and the second adhesive layer 20b on both surfaces of the base material 10 and the semiconductor chip coating layer 30 is provided on the first adhesive layer 20a has been described. However, the configuration of the thermosetting sheet 1 is not limited to this. As shown in FIG. 4, the thermosetting sheet 1 may be configured to include an adhesive layer 20 on one surface of the base material 10 and a semiconductor chip coating layer 30 on the adhesive layer 20. In addition, when the thermosetting sheet 1 is configured as shown in FIG. 4, when the thermosetting sheet 1 is attached to the support 40 to form the semiconductor chip coating member 2, a separate adhesive layer is disposed between the base material 10 of the thermosetting sheet 1 and the support 40.

[0145] Also, in the above embodiment, an example in which the semiconductor chip coating member 2 is configured to attach the semiconductor chip coating layer 30 to the support 40 via the first adhesive layer 20a and the second adhesive layer 20b laminated on both surfaces of the base material 10 (via two adhesive layers) has been described. However, the configuration of the semiconductor chip coating member 2 is not limited to this. As shown in FIG. 5, the semiconductor chip coating member 2 may be configured to attach the semiconductor chip coating layer 30 to the support 40 via a single adhesive layer 20.

[0146] In the above-described embodiment, an example in which a part of the semiconductor chip 50 is covered by the semiconductor chip coating layer 30 has been shown. However, the mode in which the semiconductor chip 50 is covered by the semiconductor chip coating layer 30 is not limited to this. That is, the entire semiconductor chip 50 may be covered by the semiconductor chip coating layer 30. Also, in the case of the thermosetting resin composition according to the present embodiment, it is not only used to cover a part of the semiconductor chip 50, but may also be used to cover the entire semiconductor chip 50.

[0147] In the above-described embodiment, in the process of manufacturing a semiconductor package using the semiconductor chip covering member 2, an example in which the rewiring process is performed before the thinning process has been described. However, the thinning process may be performed before the wiring formation process. By performing the thinning process before the wiring formation process, the sealing portion 60 can be ground before the wiring structure portion WS (formed by the rewiring layer RDL and the external electrode E such as the bump electrode (BGA)) is provided, so that the thinning process can be performed with higher accuracy. Furthermore, when performing the thinning process, the trouble of attaching the back grind tape 70 to the wiring structure portion WS side can be saved. In the above-described embodiment, in the process of manufacturing a semiconductor package using the semiconductor chip covering member 2, an example in which the thinning process is performed has been described. However, the thinning process is not necessarily required and may be omitted. For example, when the thickness limit of the package body P of the final product is not strict, or when the thickness of the semiconductor chip is sufficiently thin so that the thickness of the package body P is sufficiently thin and there is no need to grind the sealing portion 60, the thinning process may be omitted. By omitting the thinning process, the time required for the process of manufacturing the semiconductor package can be shortened.

Example

[0148] The present invention will now be described in more detail with reference to examples. The following examples are provided to further explain the present invention in detail, and are not intended to limit the scope of the present invention.

[0149] [Example 1] Acrylic resin A, epoxy resin (trishydroxyphenylmethane type epoxy resin, manufactured by Nippon Kayaku Co., Ltd. under the product name "EPPN 501HY"), phenol resin (allylphenol novolac resin, manufactured by Meiwa Kasei Co., Ltd. under the product name "MEH-8000H"), and inorganic filler (organosilica sol (nanosilica particles dispersed in methyl ethyl ketone (MEK)). Manufactured by Nissan Chemical Industries, Ltd. under the product name "MEK-EC-2430Z") were added to methyl ethyl ketone in the blending ratio shown in Table 2 below, and a thermosetting catalyst (imidazole compound, manufactured by Shikoku Kasei Co., Ltd. under the product name "2PHZ-PW") was added in the blending amount shown in Table 2 below per 100 parts by mass of the thermosetting resin (epoxy resin and phenol resin), to obtain a coating composition according to Example 1. In Table 2 below, the blending amount of the inorganic filler is not the blending amount as organosilica sol but the blending amount of the inorganic filler itself. Next, the coating composition according to Example 1 was applied to the silicone release-treated surface of a PET separator (manufactured by Mitsubishi Plastics, Inc., product name "Diafoil MRF38", thickness 50 μm) using an applicator so that the thickness after drying would be 25 μm to form a coating film, and then the coating film was heated at 120° C. for 2 minutes to remove the solvent, thereby obtaining a PET separator with a coating film (hereinafter also referred to as a coated PET separator). Two of the thus obtained PET separators with coating were stacked together with the coating sides in contact with each other to obtain a film with a semiconductor chip covering layer according to Example 1, in which a PET separator was attached to both sides. The thickness of the semiconductor chip covering layer was 50 μm. The acrylic resin A was obtained by copolymerizing acrylic acid (AA), butyl acrylate (BA), ethyl acrylate (EA), and methyl methacrylate (MMA) in methyl ethyl ketone. Also, the weight-average molecular weight of acrylic resin A is 270,000, and the mass ratio at the time of blending the raw material monomers is AA:BA:EA:MMA = 0.6 mass%:38.5 mass%:27.9 mass%:33 mass%. The weight-average molecular weight of acrylic resin A is a value measured according to the method described in the above embodiment section. Also, the epoxy equivalent of the epoxy resin, the hydroxyl equivalent of the phenolic resin, and the average particle diameter of the inorganic filler shown in Table 2 below are values measured according to the method described in the above embodiment section.

[0150] [Example 2] A film with a semiconductor chip coating layer according to Example 2 was obtained in the same manner as in Example 1, except that the blending amounts of the respective materials were changed as shown in Table 2 below.

[0151] [Example 3] A film with a semiconductor chip coating layer according to Example 3 was obtained in the same manner as in Example 1, except that the blending amounts of the respective materials were changed as shown in Table 2 below.

[0152] [Example 4] A film with a semiconductor chip coating layer according to Example 4 was obtained in the same manner as in Example 1, except that the inorganic filler was changed to the product name "MEK-EC-5430Z" manufactured by Nissan Chemical Industries, Ltd., and the blending amounts of the respective materials were changed as shown in Table 2 below. Note that "MEK-EC-5430Z" is also an organosilica sol, and the blending amount of the inorganic filler described in Table 2 below is the blending amount of the inorganic filler itself, not the blending amount as the organosilica sol.

[0153] [Example 5] A film with a semiconductor chip coating layer according to Example 5 was obtained in the same manner as in Example 1, except that the epoxy resin was changed to a dicyclopentadiene-type epoxy resin (product name "HP-7200L" manufactured by DIC Corporation), and the blending amounts of the respective materials were changed as shown in Table 2 below.

[0154] [Comparative Example 1] The acrylic resin was changed to acrylic resin B, the phenolic resin was changed to the product name "LVR8210-DL" (phenolic novolak resin) manufactured by Gunei Chemical Co., Ltd., and a film with a semiconductor chip coating layer according to Comparative Example 1 was obtained in the same manner as in Example 1, except that the compounding amounts of the respective materials were changed as shown in Table 3 below. Note that acrylic resin B was obtained by copolymerizing acrylic acid (AA), butyl acrylate (BA), ethyl acrylate (EA), acrylonitrile (AN), and 2-hydroxyethyl acrylate (HEA) in methyl ethyl ketone. In addition, the mass average molecular weight of acrylic resin B is 900,000, and the mass ratio at the time of blending the raw material monomers is AA:BA:EA:AN:HEA = 0.4 mass%:24.4 mass%:65.6 mass%:9.4 mass%:0.2 mass%. The mass average molecular weight of acrylic resin B is a value measured according to the method described in the section of the above embodiment.

[0155] [Comparative Example 2] A film with a semiconductor chip coating layer according to Comparative Example 2 was obtained in the same manner as in Comparative Example 1, except that the compounding amounts of the respective materials were changed as shown in Table 3 below.

[0156] [Comparative Example 3] A film with a semiconductor chip coating layer according to Comparative Example 3 was obtained in the same manner as in Comparative Example 1, except that the compounding amounts of the respective materials were changed as shown in Table 3 below.

[0157] [Comparative Example 4] A film with a semiconductor chip coating layer according to Comparative Example 4 was obtained in the same manner as in Comparative Example 1, except that the compounding amounts of the respective materials were changed as shown in Table 3 below.

[0158] [Comparative Example 5] A film with a semiconductor chip coating layer according to Comparative Example 5 was obtained in the same manner as in Comparative Example 1, except that no inorganic filler was included and the compounding amounts of the respective materials were changed as shown in Table 3 below.

[0159] [Comparative Example 6] A semiconductor chip-coated film according to Comparative Example 6 was obtained in the same manner as in Example 1, except that the compounding amounts of the respective materials were changed as shown in Table 3 below.

[0160] [Comparative Example 7] A semiconductor chip-coated film according to Comparative Example 7 was obtained in the same manner as in Example 1, except that the compounding amounts of the respective materials were changed as shown in Table 3 below.

[0161] [Comparative Example 8] A semiconductor chip-coated film according to Comparative Example 8 was obtained in the same manner as in Example 1, except that the phenolic resin was changed to a biphenyldimethylene-type phenolic resin (trade name "MEHC-7851SS" manufactured by Meiwafosis Co., Ltd.) and the compounding amounts of the respective materials were changed as shown in Table 3 below.

[0162] [Comparative Example 9] A semiconductor chip-coated film according to Comparative Example 9 was obtained in the same manner as in Example 1, except that the compounding amounts of the respective materials were changed as shown in Table 3 below.

[0163] [Shear viscosity before thermosetting] After removing the semiconductor chip coating layer from the semiconductor chip-coated film according to each example, the shear viscosity before thermosetting of the semiconductor chip coating layer was measured. The shear viscosity of the semiconductor chip coating layer before thermosetting was measured according to the method described in the section of the above-described embodiment. The results are shown in Tables 2 and 3 below.

[0164] [Shear modulus before thermosetting] After removing the semiconductor chip coating layer from the semiconductor chip-coated film according to each example, the shear modulus before thermosetting of the semiconductor chip coating layer was measured. The shear modulus of the semiconductor chip coating layer before thermosetting was measured according to the method described in the section of the above-described embodiment. The results are shown in Tables 2 and 3 below.

[0165] <Tensile storage modulus after thermosetting> From the film with a semiconductor chip coating layer according to each example, after removing the semiconductor chip coating layer, the tensile storage modulus after thermosetting was measured for the semiconductor chip coating layer. The tensile storage modulus of the semiconductor chip coating layer after thermosetting was measured according to the method described in the section of the above-described embodiment. The results are shown in Tables 2 and 3 below.

[0166] <Linear transmittance after thermosetting> From the film with a semiconductor chip coating layer according to each example, after removing the semiconductor chip coating layer, the linear transmittance after thermosetting was measured for the semiconductor chip coating layer. The linear transmittance of the semiconductor chip coating layer after thermosetting was measured according to the method described in the section of the above-described embodiment. The results are shown in Tables 2 and 3 below.

[0167] <Evaluation of chip shift> Using the semiconductor chip coating layer removed from the film with a semiconductor chip coating layer according to each example, the chip shift was evaluated. The chip shift was evaluated by imaging the states of the semiconductor chip coating layer before and after thermosetting with a microscope (trade name "VHZ-6000" manufactured by Keyence Corporation) for a specimen prepared using a flip chip bonder device (trade name "FC3000W" manufactured by Toray Engineering Co., Ltd.) and comparing the captured images. Specifically, the evaluation was performed as follows. (1) After placing a silicon wafer with an outer diameter of 8 inches (20 cmφ) and a thickness of 725 μm on the stage of the flip chip bonder device, the PET separator was peeled off from one surface side of the film with a semiconductor chip coating layer according to each example to expose the semiconductor chip coating layer, and the exposed surface of the semiconductor chip coating layer according to each example was bonded to one surface of the silicon wafer. Thereafter, the PET separator was peeled off from the other surface side of the film with a semiconductor chip coating layer according to each example. (2) Using the collet of the flip chip bonder device, 165 square silicon bear chips with a side length of 7 mm and a thickness of 500 μm are embedded in the semiconductor chip coating layer at intervals of 5 mm so that a part is exposed to obtain a specimen. Note that the embedding of the silicon bear chip into the semiconductor chip coating layer is performed under the condition that the collet temperature is set to 140 °C and a load is applied by the collet at 0.2 MPa for 1 second. (3) Using the microscope, an image (image from the top view) when observing the specimen (before thermosetting) at a magnification of 20 times is captured. In the captured image, select any 5 silicon bear chips where adjacent silicon bear chips exist in the vertical and horizontal directions, and for the 5 silicon bear chips, measure the distance from the silicon bear chip located above (hereinafter, simply referred to as the chip interval in the upward direction), and the distance from the silicon bear chip located to the right (hereinafter, simply referred to as the chip interval in the rightward direction). (4) After measuring the distance from the silicon bear chip located above and the distance from the silicon bear chip located to the right for the 5 silicon bear chips, place the specimen on the stage of the flip chip device again, and thermoset the semiconductor chip coating layer in the specimen. The thermosetting of the semiconductor chip coating layer is carried out by raising the stage temperature to 120 °C and holding for 1 hour, and then further raising the temperature to 150 °C and holding for 3 hours. (5) After thermosetting the semiconductor chip coating layer, using the microscope, capture an image when observing the specimen after thermosetting at a magnification of 20 times. For the silicon bear chips selected in (3) above, measure the chip interval in the upward direction and the chip interval in the rightward direction. (6) By comparing the values of the chip intervals in the upward direction measured for the 5 silicon bear chips before and after thermosetting, and comparing the values of the chip intervals in the rightward direction, evaluate whether chip shift has occurred (the presence or absence of chip shift) in the semiconductor coating layer. The presence or absence of chip shift was evaluated according to the following criteria. · Presence: Among the five silicon bear chips, at least one shows a chip interval of 50 μm or more in at least one of the upward chip interval and the rightward chip interval before and after thermosetting. · Absence: Before and after thermosetting, all of the five silicon bear chips have a chip interval of less than 50 μm in both the upward chip interval and the rightward chip interval. The results of the evaluation of chip shift are shown in Tables 2 and 3 below.

[0168] <Evaluation of voids> Voids were evaluated using the semiconductor chip coating layer removed from the semiconductor chip coating film according to each example. For the specimens prepared using a flip chip bonder device (trade name "FC3000W" manufactured by Toray Engineering Co., Ltd.), the state after thermosetting of the semiconductor chip coating layer was imaged with a microscope (trade name "VHZ-6000" manufactured by Keyence Corporation), and the voids were evaluated by analyzing the captured images. Specifically, the evaluation was performed as follows. (1) After placing a slide glass (plane dimensions 26 cm × 76 cm, thickness 1 mm) on the stage of the flip chip bonder device, the PET separator was peeled off from one surface side of the semiconductor chip coating film according to each example to expose the semiconductor chip coating layer, and the exposed surface of the semiconductor chip coating layer according to each example was bonded to one surface of the slide glass. Thereafter, the PET separator was peeled off from the other surface side of the semiconductor chip coating film according to each example. (2) Using the collet of the flip chip bonder device, four silicon bear chips with a side length of 10 mm and a thickness of 500 μm were embedded in the semiconductor chip coating layer at intervals of 20 mm so that a part thereof was exposed to obtain a specimen. Note that the embedding of the silicon carrier chip into the semiconductor chip coating layer is performed under the conditions that the collet temperature is 140 °C and a pressure of 0.2 MPa is applied by the collet for 1 second. (3) By heating the stage of the flip chip device, the semiconductor chip coating layer in the specimen is thermally cured. The thermal curing of the semiconductor chip coating layer is carried out by raising the stage temperature to 120 °C and holding for 1 hour, and then further raising the temperature to 150 °C and holding for 3 hours. (4) After thermally curing the semiconductor chip coating layer, an image of the specimen after thermal curing is captured using the microscope. (5) By analyzing the image of the specimen after thermal curing, the presence or absence of voids is evaluated. The presence or absence of voids was evaluated according to the following criteria. · Present: In the captured image, if even one void with a size of 100 μm or more is confirmed in the semiconductor chip coating layer. · Absent: In the captured image, if no void with a size of 100 μm or more is confirmed in the semiconductor chip coating layer. Note that the size of the void means the diameter of the circumscribed circle passing through the two farthest points in the confirmed void. The results of the evaluation of the voids are shown in Tables 2 and 3 below.

[0169]

Table 2

[0170]

Table 3

[0171] From Table 1, it can be seen that in Examples 1 to 5, the evaluation of the chip shift of the silicon carrier chip and the evaluation of the voids are both "absent", indicating good results. In Examples 1 to 5, since the linear transmittance after thermosetting is 60% or more in all cases, it is considered that even when encapsulated with a sealing material containing a black-based colorant, it is possible to sufficiently confirm whether there are any defects in the semiconductor chip.

[0172] On the other hand, in Comparative Examples 1 to 6 and 8, although the evaluation of the chip shift of the silicon carrier chip was "none" and good, the evaluation of voids was "present". In Comparative Examples 3, 4, 5, and 8, since the linear transmittance after thermosetting is less than 60% in all cases, it is considered that when encapsulated with a sealing material containing a black-based colorant, it is not possible to sufficiently confirm whether there are any defects in the semiconductor chip. Furthermore, in Comparative Example 7, although the evaluation of the chip shift of the silicon carrier chip and the evaluation of voids were both "none" and good results were obtained, the value of the linear transmittance after thermosetting was as low as 43.4%. Therefore, it is considered that when encapsulated with a sealing material containing a black-based colorant, it is not possible to sufficiently confirm whether there are any defects in the semiconductor chip. In Comparative Example 9, although the evaluation of voids was "none" and good, the evaluation of the chip shift of the silicon carrier chip was "present", and the linear transmittance after thermosetting was as low as 32.5%. Therefore, it is considered that when encapsulated with a sealing material containing a black-based colorant, it is not possible to sufficiently confirm whether there are any defects in the semiconductor chip.

Explanation of Reference Numerals

[0173] 1 Thermosetting sheet 2 Semiconductor chip coating member 10 Base material 20 Adhesive layer 20a First adhesive layer 20b Second adhesive layer 30 Semiconductor chip coating layer 40 Support 50 Semiconductor chip 50a Chip electrode 60 Sealing part 70 Back grinding tape 70a Adhesive layer 80 Dicing die bond film 80a Dicing tape 80b Die bond layer E External electrode P Package body RDL Redistribution layer WS Wiring structure part

Claims

1. A thermosetting resin composition containing a thermosetting resin and thermoset in a state of covering at least a part of a semiconductor chip, wherein the thermosetting resin composition contains an epoxy resin and a phenol resin as the thermosetting resin, the shear elastic modulus before thermosetting measured under the conditions of a temperature of 140°C, a frequency of 10 Hz, and a shear stress of 5000 Pa of the thermosetting resin composition is 100 Pa or more and 1000 Pa or less, and after thermosetting, the linear transmittance with respect to light having a wavelength of 500 nm at a thickness of 50 μm is 60% or more and 95% or less Thermosetting resin composition.

2. The thermosetting resin contains the epoxy resin having an epoxy equivalent of 100 or more and 250 or less and the phenol resin having a hydroxyl equivalent of 100 or more and 250 or less. The thermosetting resin composition according to claim 1.

3. The thermosetting resin contains 20% by mass or more and 40% by mass or less of the epoxy resin and 20% by mass or more and 40% by mass or less of the phenol resin. The thermosetting resin composition according to claim 2.

4. Contains 20% by mass or more and 40% by mass or less of an acrylic resin The thermosetting resin composition according to any one of claims 1 to 3.

5. The acrylic resin has a mass average molecular weight of 50,000 or more and 500,000 or less. The thermosetting resin composition according to claim 4.

6. Contains 10% by mass or more and 30% by mass or less of an inorganic filler having an average particle diameter of 10 nm or more and 100 nm or less. The thermosetting resin composition according to any one of claims 1 to 5.

7. A support, and a semiconductor chip coating layer attached on the support via an adhesive layer, and the semiconductor chip coating layer is formed of the thermosetting resin composition according to any one of claims 1 to 6. Semiconductor chip coating member.

8. A thermosetting sheet including a thermosetting resin and having a semiconductor chip coating layer thermoset in a state of covering at least a part of a semiconductor chip, wherein the semiconductor chip coating layer contains an epoxy resin and a phenol resin as the thermosetting resin, the shear elastic modulus before thermosetting measured under the conditions of a temperature of 140°C, a frequency of 10 Hz, and a shear stress of 5000 Pa of the semiconductor chip coating layer is 100 Pa or more and 1000 Pa or less, and after thermosetting, the linear transmittance with respect to light having a wavelength of 500 nm at a thickness of 50 μm is 60% or more and 95% or less. Thermosetting sheet.

9. The thermosetting resin includes the epoxy resin having an epoxy equivalent of 100 or more and 250 or less, and the phenol resin having a hydroxyl equivalent of 100 or more and 250 or less. The thermosetting sheet according to claim 8.

10. The thermosetting resin contains 20% by mass or more and 40% by mass or less of the epoxy resin, and contains 20% by mass or more and 40% by mass or less of the phenol resin. The thermosetting sheet according to claim 9.

11. Contains 20% by mass or more and 40% by mass or less of an acrylic resin. The thermosetting sheet according to any one of claims 8 to 10.

12. The acrylic resin has a mass average molecular weight of 50,000 or more and 500,000 or less. The thermosetting sheet according to claim 11.

13. Contains 10% by mass or more and 30% by mass or less of an inorganic filler having an average particle diameter of 10 nm or more and 100 nm or less. The thermosetting sheet according to any one of claims 8 to 12.

14. A support, A semiconductor chip coating layer attached on the support via an adhesive layer, and The semiconductor chip coating layer is composed of the semiconductor chip coating layer of the thermosetting sheet according to any one of claims 8 to 13. Semiconductor chip coating member.

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