Glass composition for low dielectric constant substrate

Abstract

The present invention aims to provide a glass composition for a low dielectric constant substrate that can bond a crystal compound at a lower temperature (about 900 °C or lower) without limiting the precipitated crystal and without inhibiting the properties of the crystal compound having desired low dielectric constant and low dielectric loss characteristics. 【Means for solving the problem】 A glass composition for a low dielectric constant substrate that bonds a crystal compound having low dielectric constant and low dielectric loss characteristics, wherein the glass composition for a low dielectric constant substrate has the following composition: 8 to 17 mol% of F2, 25 to 50 mol% of SiO2, 5 to 15 mol% of Al2O3, 15 to 40 mol% of B2O3, 4 to 11 mol% of CaO, 8 mol% or less of MgO, 10 mol% or less of SrO, and 1 to 10 mol% of ZnO. A glass composition for a low dielectric constant substrate is provided.

Description

Technical Field

[0001] The present invention relates to a glass composition for a low dielectric constant substrate.

Background Art

[0002] In recent years, development of devices and antennas corresponding to the high-frequency range of 30 to 300 GHz, called millimeter waves, has been actively carried out. The demand for low-temperature co-fired ceramic substrates (referred to as LTCC substrates) used in such high-frequency communication systems is also increasing. Millimeter waves are known for their high directivity and large information transmission capacity. As material characteristics of LTCC substrates that utilize these characteristics, it is required that the signal attenuation of the circuit is small and that high-speed signal propagation is possible. Here, the signal attenuation in the high-frequency range consists of the sum of conductor loss and dielectric loss, and the influence of signal attenuation due to the dielectric loss of LTCC substrate materials has become an issue. In order to solve this problem, materials for LTCC substrates with low dielectric constant and low dielectric loss are required.

[0003] In order to solve this problem, various approaches described below have been taken. As a method for manufacturing an LTCC substrate, a method of sintering a crystalline compound with a low dielectric constant and low dielectric loss is known. However, in this method, a process of sintering the crystalline compound at a high temperature must be passed through, which is industrially difficult.

[0004] There is a method of crystallizing a glass composition to obtain crystals with a low dielectric constant and low dielectric loss, and manufacturing an LTCC substrate. According to this method, the crystallized glass composition has attracted attention as a material that can bake a substrate material at a low temperature by taking advantage of its characteristics of softening and crystallizing. However, the glass crystallization process is complicated, and strict temperature and time control are required to crystallize a desired crystal having low dielectric constant and low dielectric loss characteristics, which is industrially difficult.

[0005] Furthermore, components other than the crystallized components in the glass-ceramic composition remain as a matrix, but in many cases, the chemical durability and strength of this part are weak, which often poses a problem and makes it difficult to design the glass composition.

[0006] As another method, there is also a method of using the property that glass softens at a low temperature and binding a crystal compound with low dielectric constant and low dielectric loss by a glass composition. With this method, since a crystal compound having desired properties can be bound by glass and the substrate material can be formed, it is easy to design the properties of the substrate. However, if the softening point of the glass is high, problems such as a high temperature required for binding and a long time required for binding occur. As a result, the glass composition and the crystal compound react, and properties such as small signal attenuation of the circuit of the substrate and no inhibition of high-speed signal propagation deteriorate.

[0007] If the softening point of the glass of the above substrate can be lowered, the fluidity at the heat treatment temperature increases, the amount of glass added for binding can be reduced, and the deterioration of the properties of the entire substrate is suppressed. Furthermore, the improvement in fluidity at the heat treatment temperature due to the low softening point also contributes to reducing the number of pores in the substrate material, and the deterioration of the substrate properties is suppressed.

[0008] In the invention disclosed in Patent Document 1, as a method for reducing the number of pores in the substrate material, a glass composition in which diopside, cordierite, and forsterite crystallize is disclosed. In this invention, a glass composition with a low content of fluorine of 0.1 to 3 mol% is disclosed for the purpose of improving the fluidity of the glass and obtaining a dense sintered body by reducing the pores generated during crystallization. However, the preparation of this glass composition requires melting at a high temperature of 1400 to 1500 °C, and there is also a problem that heat treatment for crystallization at 850 to 950 °C is required.

[0009] Non-Patent Document 1 discloses a glass composition added with CaF2 for the purpose of reducing the viscosity of the glass composition at high temperatures and improving the dielectric properties. However, it only examines the extremely small range where the fluorine content is up to 0.72 wt%. Although the relative dielectric constant (εr) decreases, the only result obtained is that the glass transition point temperature (°C) increases.

[0010] When the glass transition point temperature (°C) becomes particularly high, exceeding 600 °C, extra heat and time are required for heat treatment. Therefore, the reactivity with the crystalline compound to which the glass composition for a low dielectric constant substrate adheres increases, leading to an increase in the attenuation of the circuit as a substrate and a slowdown in the signal propagation speed.

[0011] As described above, there is still a problem that has not been solved, which is to provide a material for LTCC substrates with low dielectric constant and low dielectric loss that can adhere to the crystalline compound at a lower temperature without inhibiting the properties of the crystalline compound having the desired low dielectric constant and low dielectric loss characteristics in order to improve the signal attenuation due to the dielectric loss of the LTCC substrate material.

Prior Art Documents

Patent Documents

[0012]

Patent Document 1

Non-Patent Documents

[0013]

Non-Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0014] The present invention can bond a crystal compound at a lower temperature (about 900 °C or lower) without limiting the precipitated crystals and without inhibiting the properties of the crystal compound having desired low dielectric constant and low dielectric loss characteristics, and aims to provide a glass composition for a low dielectric constant substrate.

Means for Solving the Problems

[0015] The invention according to claim 1 is a glass composition for a low dielectric constant substrate for bonding a crystal compound having low dielectric constant and low dielectric loss characteristics, wherein the glass composition for a low dielectric constant substrate has the following composition: 8 to 17 mol% of F2, 25 to 50 mol% of SiO2, 5 to 15 mol% of Al2O3, 15 to 40 mol% of B2O3, 4 to 11 mol% of CaO, 8 mol% or less of MgO, 10 mol% or less of SrO, and 1 to 10 mol% of ZnO, and relates to a glass composition for a low dielectric constant substrate.

[0016] The invention according to claim 2 relates to the glass composition for a low dielectric constant substrate according to claim 1, wherein the glass composition for a low dielectric constant substrate has a relative dielectric constant of 4.7 or less at a frequency of 10 GHz.

[0017] The invention according to claim 3 relates to the glass composition for a low dielectric constant substrate according to claim 1, wherein the glass composition for a low dielectric constant substrate has a dielectric tangent of 2.5×10 -3 or less.

[0018] The invention according to claim 4 relates to the glass composition for a low dielectric constant substrate according to any one of claims 1 to 3, wherein the glass composition for a low dielectric constant substrate has a glass transition point temperature of 600 °C or lower.

Advantages of the Invention

[0019] According to the glass composition for a low dielectric constant substrate according to claim 1, it is a glass composition for a low dielectric constant substrate that binds a crystalline compound having low dielectric constant and low dielectric loss characteristics. The glass composition for a low dielectric constant substrate has the following composition: 8 to 17 mol% of F2, 25 to 50 mol% of SiO2, 5 to 15 mol% of Al2O3, 15 to 40 mol% of B2O3, 4 to 11 mol% of CaO, 8 mol% or less of MgO, 10 mol% or less of SrO, and 1 to 10 mol% of ZnO. It is characterized by being able to bind a crystalline compound at a low temperature without inhibiting the characteristics of the crystalline compound having a low dielectric constant and low dielectric loss, and exhibiting an excellent effect.

[0020] According to the glass composition for a low dielectric constant substrate according to claim 2, the glass composition for a low dielectric constant substrate has a relative dielectric constant of 4.7 or less at a frequency of 10 GHz. It is characterized by being able to bind a crystalline compound without inhibiting the characteristics of the crystalline compound having a low dielectric constant and low dielectric loss, and without attenuating the signal of the circuit of the substrate, and exhibiting an excellent effect.

[0021] According to the glass composition for a low dielectric constant substrate according to claim 3, the glass composition for a low dielectric constant substrate has a dielectric tangent of 2.5×10 -3 or less. Therefore, it can bind a crystalline compound without inhibiting the characteristics of the crystalline compound having a low dielectric constant and low dielectric loss, and without inhibiting the high-speed propagation of the signal, and exhibits an excellent effect.

[0022] According to the glass composition for a low dielectric constant substrate according to claim 4, the glass composition for a low dielectric constant substrate has a glass transition point temperature of 600 °C or less. Therefore, it is possible to provide a glass composition for a low dielectric constant substrate that does not increase the reactivity with the crystalline compound to be bound by the glass composition for a low dielectric constant substrate, does not cause an increase in the attenuation of the circuit as a substrate, and does not lead to a slowdown in the signal propagation speed, and exhibits an effect.

Embodiments for Carrying Out the Invention

[0023] Hereinafter, the glass composition for a low dielectric constant substrate according to the present invention will be described in detail.

[0024] Although the glass composition for a low dielectric constant substrate of the present invention is exemplified as an aluminoborosilicate - based glass composition, it goes without saying that this is merely an example.

[0025] In the glass composition for a low dielectric constant substrate of the present invention, the glass composition for a low dielectric constant substrate containing 8 - 17 mol% of F2, 25 - 50 mol% of SiO2, 5 - 15 mol% of Al2O3, 15 - 40 mol% of B2O3, 4 - 11 mol% of CaO, 8 mol% or less of MgO, 10 mol% or less of SrO, and 1 - 10 mol% of ZnO is in an amorphous state, but it is naturally possible to use a glass composition for a low dielectric constant substrate that is glass - crystallized within a range that has no influence such as signal attenuation of the substrate circuit or slowing down of signal propagation.

[0026] In the glass composition for a low dielectric constant substrate included in the present invention, F2 is an essential component, and a content of 8 - 17 mol% of F2 is desirable. When the content of F2 is less than 8 mol%, the softening temperature of the glass composition for a low dielectric constant substrate becomes high, and a dense substrate bonded with the glass composition for a low dielectric constant substrate cannot be obtained, resulting in a decrease in dielectric properties and weakening of signal strength. When the content of F2 exceeds 17 mol%, glass crystallization occurs, resulting in a decrease in dielectric properties and weakening of signal strength. Also, if the content of F2 is 8 - 12 mol%, the characteristics of a crystalline compound with lower dielectric constant and lower dielectric loss can be obtained, and the crystalline compound can be bonded at a lower temperature without inhibiting the characteristics of the crystalline compound compared to exceeding 12 mol% to 17 mol% or less.

[0027] In the glass composition for a low dielectric constant substrate included in the present invention, SiO2 is an essential component, and a content of SiO2 of 25 to 50 mol% is desirable. If the content of SiO2 is less than 25 mol%, it is difficult to form glass. If the content of SiO2 exceeds 50 mol%, the softening temperature of the glass composition for a low dielectric constant substrate becomes high, and a dense substrate bonded with the glass composition for a low dielectric constant substrate cannot be obtained. Also, if the content of SiO2 is 35 to 47 mol%, it becomes easier to vitrify than when it is 25 mol% or more and less than 35 mol%, and it can bond crystalline compounds at a lower temperature without deteriorating the dielectric properties more than when it is more than 47 mol% and 50 mol% or less.

[0028] In the glass composition for a low dielectric constant substrate included in the present invention, Al2O3 is an essential component, and a content of Al2O3 of 5 to 15 mol% is desirable. If the content of Al2O3 is less than 5 mol%, it is difficult to form glass. If the content of Al2O3 exceeds 15 mol%, the softening temperature of the glass composition for a low dielectric constant substrate becomes high, and a dense substrate bonded with the glass composition for a low dielectric constant substrate cannot be obtained. Also, if the content of Al2O3 is 5 to 12 mol%, it is less likely to crystallize than when it is more than 12 mol% and 15 mol% or less, and it can bond crystalline compounds at a lower temperature.

[0029] In the glass composition for a low dielectric constant substrate included in the present invention, B2O3 is an essential component, and a content of B2O3 of 15 to 40 mol% is desirable. If the content of B2O3 is less than 15 mol%, the dielectric properties deteriorate. If the content of B2O3 exceeds 40 mol%, the chemical durability decreases, and a dense substrate with a stably bonded crystalline compound cannot be obtained. Also, if the content of B2O3 is 15 to 30 mol%, it is possible to prevent a decrease in chemical durability such as water resistance, acid resistance, and alkali resistance more than when it is more than 30 mol% and 40 mol% or less.

[0030] In the glass composition for a low dielectric constant substrate included in the present invention, CaO is an essential component, and a CaO content of 4 to 11 mol% is desirable. If the CaO content is less than 4 mol%, the softening temperature becomes high, and if the CaO content exceeds 11 mol%, the dielectric properties of the glass composition for a low dielectric constant substrate deteriorate, so that a dense substrate in which crystal compounds are stably bonded cannot be obtained. Also, if the CaO content is 5 to 11 mol%, crystal compounds can be bonded at a lower temperature than when the content is more than 4 mol% and less than 5 mol%.

[0031] In the glass composition for a low dielectric constant substrate included in the present invention, MgO is an optional component, and an MgO content of 0 to 8 mol% is desirable. If the MgO content exceeds 8 mol%, it becomes difficult to form the glass of the glass composition for a low dielectric constant substrate, and the chemical durability deteriorates, so that a dense substrate in which crystal compounds are stably bonded cannot be obtained. If the MgO content is 0 to 5 mol%, it is possible to prevent a decrease in chemical durability such as water resistance, acid resistance, and alkali resistance and a decrease in dielectric properties compared to when the content is more than 5 mol% and less than or equal to 8 mol%.

[0032] In the glass composition for a low dielectric constant substrate included in the present invention, SrO is an optional component, and an SrO content of 0 to 10 mol% is desirable. If the SrO content exceeds 10 mol%, it becomes difficult to form the glass of the glass composition for a low dielectric constant substrate, and the chemical durability deteriorates, so that a dense substrate in which crystal compounds are stably bonded cannot be obtained. Also, if the SrO content is 0 to 5 mol%, it is possible to prevent a decrease in chemical durability such as water resistance, acid resistance, and alkali resistance and a decrease in dielectric properties compared to when the content is more than 5 mol% and less than or equal to 10 mol%.

[0033] In the glass composition for a low dielectric constant substrate included in the present invention, ZnO is an essential component, and the content of ZnO is preferably 1 to 10 mol%. When the content of ZnO is less than 1 mol%, the softening temperature becomes high, and when the content of ZnO exceeds 10 mol%, the dielectric properties of the glass composition for a low dielectric constant substrate deteriorate, so that a dense substrate in which crystal compounds are stably bonded cannot be obtained. If the content of ZnO is 1 to 5 mol%, it is possible to prevent a decrease in chemical durability such as water resistance, acid resistance, and alkali resistance and a decrease in dielectric properties as compared with a content exceeding 5 mol% and less than or equal to 10 mol%.

[0034] In the glass composition for a low dielectric constant substrate included in the present invention, the glass composition for a low dielectric constant substrate may have the following composition: 8 to 12 mol% of F2, 27 to 47 mol% of SiO2, 5 to 12 mol% of Al2O3, 15 to 37 mol% of B2O3, 5 to 11 mol% of CaO, 5 mol% or less of MgO, 5 mol% or less of SrO, and 1 to 5 mol% of ZnO. If it is possible to bond without inhibiting the properties of the crystal compound having a low dielectric constant and a low dielectric loss, it is of course possible to appropriately adjust the content of each composition.

[0035] In the glass composition for a low dielectric constant substrate included in the present invention, the glass transition point temperature of the glass composition for a low dielectric constant substrate is preferably 600°C or lower. When the glass transition point temperature exceeds 600°C, extra heat and time are required for heat treatment. Therefore, the reactivity of the glass composition for a low dielectric constant substrate of the present invention with the crystal compound to be bonded increases, which may lead to an increase in the attenuation of the circuit as a substrate and a slowdown in the signal propagation speed.

[0036] On the other hand, when the glass transition point temperature of the glass composition for a low dielectric constant substrate is 600°C or lower, the reactivity of the glass composition for a low dielectric constant substrate of the present invention with the crystal compound to be bonded does not increase, and the attenuation of the circuit as a substrate and the high-speed signal propagation are not inhibited.

[0037] In the glass composition for a low dielectric constant substrate included in the present invention, it is desirable that the glass composition for a low dielectric constant substrate can bind a crystalline compound at a heat treatment temperature of 900 °C or lower. When the heat treatment temperature is higher than 900 °C, the glass composition for a low dielectric constant substrate is likely to react with the crystalline compound to which it binds, which may increase the attenuation of the circuit as a substrate and lead to a slowdown in signal propagation.

[0038] In the glass composition for a low dielectric constant substrate included in the present invention, as the crystalline compound having low dielectric constant and low dielectric loss characteristics that binds with the glass composition for a low dielectric constant substrate, it is desirable that it is at least one selected from garnet, forsterite, willemite, mullite, cordierite, steatite, enstatite, diopside, and anorthosite, but it is not limited thereto.

[0039] The glass composition for a low dielectric constant substrate of the present invention is desirably amorphous, but this is only an example, and it goes without saying that if the glass composition for a low dielectric constant substrate does not react with the crystalline compound to which it binds and the attenuation of the circuit as a substrate is small, and it does not inhibit the high-speed propagation of signals, it may crystallize during heat treatment.

Examples

[0040] Hereinafter, the effects of the present invention will be made clearer by showing examples of the glass composition for a low dielectric constant substrate according to the present invention. However, the present invention is not limited to the following examples.

[0041] <Method for producing frit> After mixing 100 g of raw material powder weighed to have a predetermined component ratio, the 100 g of raw material powder was put into a chamotte crucible. Next, the raw material powder put into the chamotte crucible was melted at a temperature of 1300 °C for 30 minutes to prepare a melt. Thereafter, the melt was poured into water and rapidly cooled to produce frit.

[0042] <Method for producing frit powder> The prepared frit was pulverized using a pulverizer (such as a ball mill or a planetary ball mill) so that the average particle size (D50) became 4 to 20 μm. The confirmation that the average particle size (D50) was 4 to 20 μm was performed using a laser particle size distribution measuring device (model number: MT3300 EXII (manufactured by Microtrac BEL)).

[0043] <Differential Thermal - Thermogravimetric Simultaneous Analysis (TG - DTA) of Glass Composition for Low Dielectric Constant Substrate> Using a thermal differential analyzer TG - DTA STD2500 (manufactured by NETZSCH), the glass transition point temperature (Tg: unit is °C) was measured.

[0044] <Glassification of Glass Composition for Low Dielectric Constant Substrate> In the results of the examples, those in which the glass composition for the low dielectric constant substrate was glassified were marked as ○, and those that were not glassified were marked as × and evaluated.

[0045] <Dielectric Constant Measurement> Using a dielectric constant measuring device cavity resonator ADMS01Nc1 (manufactured by AET), the relative dielectric constant (εr) and dielectric loss tangent (tanδ) at 10 GHz were measured.

[0046] The compositions and measured data shown in Examples 1 to 12 are summarized in Table 1 below.

[0047]

Table 1

[0048] The compositions and measured data shown in Comparative Examples 1 to 17 are summarized in Tables 2 - 1 and 2 - 2 below.

[0049]

Table 2 - 1

[0050]

Table 2 - 2

[0051] Examples 1 to 7 and 10 to 12 combined the composition of the glass composition for a low dielectric constant substrate so that the proportions were within the ranges of 8 to 17 mol% of F2, 25 to 50 mol% of SiO2, 5 to 15 mol% of Al2O3, 15 to 40 mol% of B2O3, 4 to 11 mol% of CaO, 8 mol% or less of MgO, 10 mol% or less of SrO, and 1 to 10 mol% of ZnO, and evaluated and measured the presence or absence of vitrification, relative dielectric constant (εr), dielectric loss tangent (tanδ), and glass transition point temperature (°C).

[0052] As a result, in Examples 1 to 7 and 10 to 12, the evaluations of vitrification were all ○. Also, in the dielectric constant measurement results, the relative dielectric constant (εr) at a frequency of 10 GHz in Examples 1 to 7 and 10 to 12 was 4.7 or less, and the dielectric loss tangent (tanδ) was 2.5×10 -3 or less. Furthermore, in the differential thermal - thermogravimetric simultaneous analysis (TG - DTA), the glass transition point temperature (°C) was 600°C or less. From the above, it became clear that Examples 1 to 7 and 10 to 12 have very good physical properties as the glass composition for a low dielectric constant substrate of the present invention.

[0053] Also, Examples 8 and 9 combined the composition of the glass composition for a low dielectric constant substrate so that the proportions were within the ranges of 8 to 17 mol% of F2, 25 to 50 mol% of SiO2, 5 to 15 mol% of Al2O3, 15 to 40 mol% of B2O3, 4 to 11 mol% of CaO, and 1 to 10 mol% of ZnO, and evaluated and measured the presence or absence of vitrification, relative dielectric constant (εr), dielectric loss tangent (tanδ), and glass transition point temperature (°C). These are examples that do not contain MgO and SrO which are optional components.

[0054] In Examples 8 and 9, the evaluations of vitrification were all ○. Also, in the dielectric constant measurement results, the relative dielectric constant (εr) at a frequency of 10 GHz in Examples 8 and 9 was 4.7 or less, and the dielectric loss tangent (tanδ) was 2.5×10 -3The following results were obtained. Further, in the differential thermal-thermogravimetric simultaneous analysis (TG-DTA), the glass transition point temperatures (°C) were each 600°C or lower. From the above, it was revealed that Examples 8 and 9 have very good physical properties as the glass compositions for low dielectric constant substrates of the present invention.

[0055] In Comparative Example 1, in the composition of the glass composition for a low dielectric constant substrate, it contains less than 8 mol% of F2, and the other compositions are in the range of 25 to 50 mol% of SiO2, 5 to 15 mol% of Al2O3, 15 to 40 mol% of B2O3, 4 to 11 mol% of CaO, 8 mol% or less of MgO, 10 mol% or less of SrO, and 1 to 10 mol% of ZnO, and the evaluation and measurement of the presence or absence of vitrification, relative dielectric constant (εr), dielectric loss tangent (tanδ), and glass transition point temperature (°C) were carried out.

[0056] In Comparative Example 1, the evaluation of vitrification was ○. Also, in the dielectric constant measurement results, the relative dielectric constant (εr) at a frequency of 10 GHz was 4.7 or less, and the dielectric loss tangent (tanδ) was 2.5×10 -3 The following results were obtained. However, in the differential thermal-thermogravimetric simultaneous analysis (TG-DTA), the glass transition point temperature (°C) was 627°C, resulting in a value exceeding 600°C. When the glass transition point temperature (°C) exceeds 600°C, extra heat and time are required for heat treatment. Therefore, the reactivity with the crystalline compounds to which the glass composition for a low dielectric constant substrate of the present invention binds increases, leading to an increase in the attenuation of the circuit as a substrate and a slowdown in the signal propagation speed. From the above, it was revealed that Comparative Example 1 has unsuitable physical properties as the glass composition for a low dielectric constant substrate of the present invention.

[0057] Comparative Examples 2 and 3 contain more than 17 mol% of F2 and more than 11 mol% of CaO in the composition of the glass composition for a low dielectric constant substrate. The other compositions are combined so as to be in the range of 25 mol% to 50 mol% of SiO2, 5 to 15 mol% of Al2O3, 15 to 40 mol% of B2O3, 8 mol% or less of MgO, 10 mol% or less of SrO, and 1 to 10 mol% of ZnO. The presence or absence of vitrification, relative dielectric constant (εr), dielectric loss tangent (tanδ), and glass transition point temperature (°C) were evaluated and measured.

[0058] In Comparative Examples 2 and 3, the evaluation of vitrification was ○. Also, in the dielectric constant measurement results, the relative dielectric constant (εr) at a frequency of 10 GHz exceeded 4.7, and in the dielectric loss tangent (tanδ), it was -3 2.5×10 or less. Also, in the differential thermal - thermogravimetric simultaneous analysis (TG - DTA), the glass transition point temperature (°C) was 600°C or less. When the relative dielectric constant (εr) exceeds 4.7, the dielectric properties deteriorate and the signal strength weakens. From the above, it became clear that Comparative Examples 2 and 3 have unsuitable physical properties as the glass composition for a low dielectric constant substrate of the present invention.

[0059] Comparative Examples 4 and 5 contain more than 17 mol% of F2, less than 15 mol% of B2O3, and more than 11 mol% of CaO in the composition of the glass composition for a low dielectric constant substrate. The other compositions are 25 mol% to 50 mol% of SiO 2、 Combined so as to be in the range of 5 to 15 mol% of Al2O3, 8 mol% or less of MgO, 10 mol% or less of SrO, and 1 to 10 mol% of ZnO, and the presence or absence of vitrification, relative dielectric constant (εr), dielectric loss tangent (tanδ), and glass transition point temperature (°C) were evaluated and measured.

[0060] In Comparative Examples 4 and 5, the evaluation of vitrification was × and they did not vitrify. Since Comparative Examples 4 and 5 did not vitrify, dielectric constant measurement and differential thermal - thermogravimetric simultaneous analysis (TG - DTA) were not performed. From the above, it became clear that Comparative Examples 4 and 5 have unsuitable physical properties as the glass composition for a low dielectric constant substrate of the present invention.

[0061] Comparative Example 6 contains more than 17 mol% of F2 and more than 10 mol% of SrO in the composition of the glass composition for low dielectric constant substrates, and the other compositions are 25-50 mol% of SiO2, 5-15 mol% of Al2O3, 15-40 mol% of B2O3, 4-11 mol% of CaO 、 Combined so as to be within the range of 8 mol% or less of MgO and 10 mol% or less of ZnO, the presence or absence of vitrification, the relative dielectric constant (εr), the dielectric loss tangent (tanδ), and the glass transition point temperature (°C) were evaluated and measured.

[0062] In Comparative Example 6, the evaluation of vitrification was ○. Also, in the dielectric constant measurement results, the relative dielectric constant (εr) at a frequency of 10 GHz exceeded 4.7, and in the dielectric loss tangent (tanδ), it was 2.5×10 -3 The following was obtained. Also, in differential thermal-thermogravimetric simultaneous analysis (TG-DTA), the glass transition point temperature (°C) was 600°C or lower. When the relative dielectric constant (εr) exceeds 4.7, the dielectric properties deteriorate and the signal strength weakens. From the above, it became clear that Comparative Example 6 has unsuitable physical properties as the glass composition for low dielectric constant substrates of the present invention.

[0063] Comparative Examples 7 and 8 contain less than 5 mol% of Al2O3 in the composition of the glass composition for low dielectric constant substrates, and the other compositions are 8-17 mol% of F2, 25-50 mol% of SiO2, 15-40 mol% of B2O3, 4-11 mol% of CaO, 8 mol% or less of MgO, 10 mol% or less of SrO, and 1-10 mol% of ZnO. Combined so as to be within the range, the presence or absence of vitrification, the relative dielectric constant (εr), the dielectric loss tangent (tanδ), and the glass transition point temperature (°C) were evaluated and measured.

[0064] In Comparative Examples 7 and 8, the evaluation of vitrification was ×, and they did not vitrify. Since Comparative Examples 7 and 8 did not vitrify, dielectric constant measurement and differential thermal-thermogravimetric simultaneous analysis (TG-DTA) were not performed. From the above, it became clear that Comparative Examples 7 and 8 have unsuitable physical properties as the glass composition for low dielectric constant substrates of the present invention.

[0065] Comparative Example 9 contains more than 50 mol% of SiO2 and less than 15 mol% of B2O3 in the composition of the glass composition for a low dielectric constant substrate, and the other compositions are in the range of 8 to 17 mol% of F2, 5 to 15 mol% of Al2O3, 4 to 11 mol% of CaO, 8 mol% or less of MgO, 10 mol% or less of SrO, and 1 to 10 mol% of ZnO. They are combined so that the ratio is within the range, and the evaluation and measurement of the presence or absence of vitrification, relative dielectric constant (εr), dielectric loss tangent (tanδ), and glass transition point temperature (°C) are carried out.

[0066] In Comparative Example 9, the evaluation of vitrification was ○. Also, in the dielectric constant measurement results, the relative dielectric constant (εr) at a frequency of 10 GHz exceeded 4.7, and in the dielectric loss tangent (tanδ), it exceeded 2.5×10 -3 . Also, in the differential thermal - thermogravimetric simultaneous analysis (TG - DTA), the glass transition point temperature (°C) was 600°C or less. When the relative dielectric constant (εr) exceeds 4.7, the dielectric properties deteriorate and the signal strength weakens. From the above, it became clear that Comparative Example 9 has unsuitable physical properties as the glass composition for a low dielectric constant substrate of the present invention.

[0067] Comparative Examples 10 and 11 contain more than 11 mol% of CaO in the composition of the glass composition for a low dielectric constant substrate, and the other compositions are in the range of 8 to 17 mol% of F2, 25 to 50 mol% of SiO2, 5 to 15 mol% of Al2O3, 15 to 40 mol% of B2O 3、 8 mol% or less of MgO, 10 mol% or less of SrO, and 1 to 10 mol% of ZnO. They are combined so that the ratio is within the range, and the evaluation and measurement of the presence or absence of vitrification, relative dielectric constant (εr), dielectric loss tangent (tanδ), and glass transition point temperature (°C) are carried out.

[0068] In Comparative Examples 10 and 11, the evaluations of vitrification were each ○. Also, in the dielectric constant measurement results, the relative dielectric constant (εr) at a frequency of 10 GHz exceeded 4.7. Also, in the dielectric loss tangent (tanδ), in both Comparative Examples 10 and 11, it exceeded 2.5×10 -3It exceeded the limit. In differential thermal - thermogravimetric simultaneous analysis (TG - DTA), in Comparative Examples 10 and 11, the glass transition point temperature (°C) was 600°C or lower. From the above, it became clear that Comparative Examples 10 and 11 have physical properties that are not suitable as the glass composition for a low - dielectric - constant substrate of the present invention.

[0069] Comparative Example 12 contains less than 8 mol% of F2 and more than 10 mol% of ZnO in the composition of the glass composition for a low - dielectric - constant substrate, and the other compositions are 25 - 50 mol% of SiO2, 5 - 15 mol% of Al2O3, 15 - 40 mol% of B2O3, 4 - 11 mol% of CaO 、 Combined so as to be within the range of 8 mol% or less of MgO and 10 mol% or less of SrO, the presence or absence of vitrification, relative dielectric constant (εr), dielectric loss tangent (tanδ), and glass transition point temperature (°C) were evaluated and measured.

[0070] In Comparative Example 12, the evaluation of vitrification was ○. Also, in the dielectric constant measurement results, the relative dielectric constant (εr) at a frequency of 10 GHz exceeded 4.7, and in the dielectric loss tangent (tanδ), it exceeded 2.5×10 -3 As a result. Also, in differential thermal - thermogravimetric simultaneous analysis (TG - DTA), the glass transition point temperature (°C) was 600°C or lower. When the relative dielectric constant (εr) exceeds 4.7, the dielectric characteristics deteriorate and the signal strength weakens. From the above, it became clear that Comparative Example 12 has physical properties that are not suitable as the glass composition for a low - dielectric - constant substrate of the present invention.

[0071] Comparative Example 13 contains less than 8 mol% of F2 and more than 8 mol% of MgO in the composition of the glass composition for a low - dielectric - constant substrate, and the other compositions are 25 - 50 mol% of SiO2, 5 - 15 mol% of Al2O3, 15 - 40 mol% of B2O3, 4 - 11 mol% of CaO 、 10 mol% or less of SrO, and combined so as to be within the range of 1 - 10 mol% of ZnO, the presence or absence of vitrification, relative dielectric constant (εr), dielectric loss tangent (tanδ), and glass transition point temperature (°C) were evaluated and measured.

[0072] In Comparative Example 13, the evaluation of vitrification was ○. Also, in the dielectric constant measurement results, the relative dielectric constant (εr) at a frequency of 10 GHz exceeded 4.7, and in the dielectric loss tangent (tanδ), it was 2.5×10 -3 as follows. Also, in the differential thermal - thermogravimetric simultaneous analysis (TG - DTA), the glass transition point temperature (°C) was 600°C or lower. When the relative dielectric constant (εr) exceeds 4.7, the dielectric properties deteriorate and the signal strength weakens. From the above, it became clear that Comparative Example 13 has physical properties that are not suitable as the glass composition for a low - dielectric - constant substrate of the present invention.

[0073] In Comparative Example 14, in the composition of the glass composition for a low - dielectric - constant substrate, it contains more than 8 mol% of MgO, and the other compositions are within the range of 8 - 17 mol% or less of F2, 25 - 50 mol% of SiO2, 5 - 15 mol% of Al2O3, 15 - 40 mol% of B2O3, 4 - 11 mol% of CaO 、 in combination so as to be in the ratio within the range of 10 mol% or less of SrO and 1 - 10 mol% of ZnO, and the evaluation and measurement of the presence or absence of vitrification, relative dielectric constant (εr), dielectric loss tangent (tanδ), and glass transition point temperature (°C) were carried out.

[0074] In Comparative Example 14, the evaluation of vitrification was ○. Also, in the dielectric constant measurement results, the relative dielectric constant (εr) at a frequency of 10 GHz exceeded 4.7, and in the dielectric loss tangent (tanδ), it exceeded 2.5×10 -3 . Also, in the differential thermal - thermogravimetric simultaneous analysis (TG - DTA), the glass transition point temperature (°C) was 600°C or lower. When the relative dielectric constant (εr) exceeds 4.7, the dielectric properties deteriorate and the signal strength weakens. From the above, it became clear that Comparative Example 14 has physical properties that are not suitable as the glass composition for a low - dielectric - constant substrate of the present invention.

[0075] Comparative Example 15 contains more than 11 mol% of CaO and more than 10 mol% of ZnO in the composition of the glass composition for a low dielectric constant substrate, and the other compositions are in the range of 8 to 17 mol% or less of F2, 25 to 50 mol% of SiO2, 5 to 15 mol% of Al2O3, 15 to 40 mol% of B2O3, 8 mol% or less of MgO, and 10 mol% or less of SrO. They are combined so that the presence or absence of vitrification, relative dielectric constant (εr), dielectric loss tangent (tanδ), and glass transition point temperature (°C) are evaluated and measured.

[0076] In Comparative Example 15, the evaluation of vitrification was ○. Also, in the dielectric constant measurement results, the relative dielectric constant (εr) at a frequency of 10 GHz exceeded 4.7, and in the dielectric loss tangent (tanδ), it was 2.5×10 -3 or less. Also, in the differential thermal - thermogravimetric simultaneous analysis (TG - DTA), the glass transition point temperature (°C) was 600°C or less. When the relative dielectric constant (εr) exceeds 4.7, the dielectric properties deteriorate and the signal intensity weakens. From the above, it became clear that Comparative Example 15 has unsuitable physical properties as the glass composition for a low dielectric constant substrate of the present invention.

[0077] Comparative Example 16 contains more than 8 mol% of MgO in the composition of the glass composition for a low dielectric constant substrate, and the other compositions are in the range of 8 to 17 mol% or less of F2, 25 to 50 mol% of SiO2, 5 to 15 mol% of Al2O3, 15 to 40 mol% of B2O3, 4 to 11 mol% of CaO, 10 mol% or less of SrO, and 1 to 10 mol% of ZnO. They are combined so that the presence or absence of vitrification, relative dielectric constant (εr), dielectric loss tangent (tanδ), and glass transition point temperature (°C) are evaluated and measured.

[0078] In Comparative Example 16, the evaluation of vitrification was ○. Also, in the dielectric constant measurement results, the relative dielectric constant (εr) at a frequency of 10 GHz was 4.7 or less, and the dielectric loss tangent (tanδ) was 2.5×10 -3The following was obtained. However, in differential thermal - thermogravimetric simultaneous analysis (TG - DTA), the glass transition point temperature (°C) was 603°C, resulting in a value exceeding 600°C. When the glass transition point temperature (°C) exceeds 600°C, extra heat and time are required for heat treatment. Therefore, the reactivity of the glass composition for a low - dielectric - constant substrate of the present invention with the crystalline compound to which it binds increases, leading to an increase in the attenuation of the circuit as a substrate and a slowdown in the signal propagation speed. From the above, it has become clear that Comparative Example 16 has physical properties that are not suitable as the glass composition for a low - dielectric - constant substrate of the present invention.

[0079] Comparative Example 17 contains less than 15 mol% of B2O3, less than 4 mol% of CaO, more than 8 mol% of MgO, and more than 10 mol% of ZnO in the composition of the glass composition for a low - dielectric - constant substrate. The other compositions are combined so as to be within the range of 8 - 17 mol% or less of F2, 25 - 50 mol% of SiO2, 5 - 15 mol% of Al2O3, and 10 mol% or less of SrO. The presence or absence of vitrification, relative dielectric constant (εr), dielectric loss tangent (tanδ), and glass transition point temperature (°C) were evaluated and measured.

[0080] In Comparative Example 17, the evaluation of vitrification was ○. Also, in the dielectric constant measurement results, the relative dielectric constant (εr) at a frequency of 10 GHz exceeded 4.7, and in the dielectric loss tangent (tanδ), it was 2.5×10 -3 The following was obtained. Also, in differential thermal - thermogravimetric simultaneous analysis (TG - DTA), the glass transition point temperature (°C) was 600°C or less. When the relative dielectric constant (εr) exceeds 4.7, the dielectric properties deteriorate and the signal strength weakens. From the above, it has become clear that Comparative Example 17 has physical properties that are not suitable as the glass composition for a low - dielectric - constant substrate of the present invention.

Industrial Applicability

[0081] The glass composition for a low dielectric constant substrate according to the present invention can be suitably used for various substrate materials such as LTCC substrates used for devices and antennas corresponding to the region of 30 to 300 GHz. Further, according to the present invention, it is possible to provide a glass composition for a low dielectric constant substrate that prevents attenuation of signals of the substrate in the high frequency range, has a low dielectric constant, and has a low dielectric loss.

Claims

1. A glass composition for a low dielectric constant substrate that binds a crystalline compound having low dielectric constant and low dielectric loss characteristics, wherein the glass composition for a low dielectric constant substrate has the following composition, 8 to 17 mol% of F ２ , 25 to 50 mol% of SiO ２ , 5 to 15 mol% of Al ２ O ３ , 15 to 40 mol% of B ２ O ３ , 4 to 11 mol% of CaO, 8 mol% or less of MgO, 10 mol% or less of SrO, and 1 to 10 mol% of ZnO, a glass composition for a low dielectric constant substrate.

2. The glass composition for a low dielectric constant substrate according to claim 1, wherein the relative dielectric constant at a frequency of 10 GHz is 4.7 or less.

3. The glass composition for a low dielectric constant substrate has a dielectric tangent of 2.5×10 －３ or less. The glass composition for a low dielectric constant substrate according to claim 1.

4. The glass composition for a low dielectric constant substrate according to any one of claims 1 to 3, wherein the glass transition point temperature is 600°C or less.

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