Semiconductor device

Abstract

To provide a semiconductor device capable of preventing damage to a semiconductor chip caused by internal stress.SOLUTION: A semiconductor device comprises: a light-emitting element; a light-receiving element; an input side terminal; a switching element; a lead that includes a mount bed on which the switching element is mounted, and an output side terminal; and a resin package that encapsulates the light-emitting element, the light-receiving element, the switching element, and the mount bed. The light-receiving element and the switching element are arranged side by side in a second direction crossing a first direction from the light-emitting element toward the light-receiving element. The resin package includes: a first lateral face from which the input side terminal is extended; a second lateral face from which the output side terminal is extended; and a third lateral face connected to the first and second lateral faces. The switching element is located at the center between the first and second lateral faces. The mount bed has a lateral face opposed to the third lateral face and that is close to the center side of the resin package in the second direction from a position of a lateral face of the output side terminal.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] Embodiments relate to semiconductor devices.

Background Art

[0002] Semiconductor chips used under high voltage and high current are enlarged in area to increase current capacity. In a semiconductor device in which such a semiconductor chip is resin-sealed, the semiconductor chip may be damaged due to internal stress caused by the difference in the coefficient of thermal expansion of the package material.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Embodiments provide a semiconductor device that prevents damage to a semiconductor chip due to internal stress.

Means for Solving the Problems

[0005] The semiconductor device according to the embodiment includes a light-emitting element, an input-side terminal electrically connected to the light-emitting element, a light-receiving element provided at a position facing the light-emitting element, a first switching element electrically connected to the light-receiving element, a first lead including a first mounting bed on which the first switching element is mounted and a first output-side terminal electrically connected to the first switching element, and a resin package that seals the light-emitting element, the light-receiving element, the first switching element, and the first mounting bed of the first lead. The light-receiving element and the first switching element are arranged in a second direction intersecting a first direction from the light-emitting element toward the light-receiving element. The resin package includes a first side surface extending the input-side terminal, a second side surface provided on the opposite side of the first side surface and extending the first output-side terminal, and a third side surface intersecting the second direction. The first side surface and the second side surface extend along the second direction. The first switching element is sealed at the center between the first side surface and the second side surface in a third direction from the first side surface toward the second side surface. The first lead has a side surface of the first output-side terminal intersecting the second direction and a side surface of the first mounting bed facing the third side surface of the resin package, and the side surface of the first mounting bed is provided at a position closer to the center of the resin package than the position of the side surface of the first output-side terminal in the second direction.

Brief Description of the Drawings

[0006]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Embodiments for Carrying Out the Invention

[0007] Hereinafter, embodiments will be described with reference to the drawings. The same parts in the drawings are denoted by the same reference numerals, and detailed descriptions thereof will be omitted as appropriate, and different parts will be described. Note that the drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the sizes between parts, etc. are not necessarily the same as the actual ones. Also, even when representing the same part, there are cases where the dimensions and ratios are represented differently in the drawings.

[0008] Furthermore, the arrangement and configuration of each part will be described using the X-axis, Y-axis, and Z-axis shown in each figure. The X-axis, Y-axis, and Z-axis are mutually orthogonal and represent the X direction, Y direction, and Z direction, respectively. Also, there are cases where the Z direction is described as upward and the opposite direction as downward.

[0009] FIG. 1 is a perspective view schematically showing a semiconductor device 1 according to an embodiment. The semiconductor device 1 is, for example, a photo relay including a photocoupler.

[0010] The semiconductor device 1 includes a first switching element 10, a second switching element 20, a light receiving element 30, a light emitting element 40, a resin package 50, input side terminals 60a to 60h, and output side terminals 70a, 70b, 80a, 80b. The first switching element 10 and the second switching element 20 are, for example, MOSFETs (Metal Oxide Semiconductor Field Effect Transistors).

[0011] The first switching element 10, the second switching element 20, the light receiving element 30, and the light emitting element 40 are encapsulated inside the resin package 50. The input side terminals 60a to 60h and the output side terminals 70a, 70b, 80a, 80b are provided so as to extend from the resin package 50, respectively.

[0012] Figs. 2(a) and (b) are schematic diagrams showing the semiconductor device 1 according to the embodiment. Fig. 2(a) is a schematic plan view showing the internal configuration of the resin package 50. Fig. 2(b) is a cross-sectional view taken along the line A-A shown in Fig. 2(a).

[0013] As shown in Fig. 2(a), the semiconductor device 1 includes a first lead 70, a second lead 80, and a third lead 90. The first lead 70, the second lead 80, and the third lead 90 are, for example, metal plates containing copper or an iron-nickel alloy.

[0014] The first lead 70, the second lead 80, and the third lead 90 are sealed inside the resin package 50. A part of the first lead 70 extends outside the resin package 50 as output side terminals 70a and 70b. A part of the second lead 80 extends outside the resin package 50 as output side terminals 80a and 80b.

[0015] The first lead 70 includes, for example, a mount bed 70m. The first switching element 10 is mounted on the lower surface of the mount bed 70m. The output side terminals 70a and 70b are electrically connected to the first switching element 10 via the mount bed 70m.

[0016] The second lead 80 includes, for example, a mount bed 80m. The second switching element 20 is mounted on the lower surface of the mount bed 80m. The output side terminals 80a and 80b are electrically connected to the second switching element 20 via the mount bed 80m.

[0017] The third lead 90 is provided between the first lead 70 and the second lead 80. The light receiving element 30 is mounted on the lower surface of the third lead 90.

[0018] As shown in Fig. 2(a), the input side terminals 60a to 60h each include a sealed portion located inside the resin package 50 and a terminal portion extending from the resin package 50.

[0019] The resin package 50 has, for example, a rectangular shape in a top view, and has a short side extending in the X direction and a long side extending in the Y direction. The input-side terminals 60a to 60h and the output-side terminals 70a, 70b, 80a, and 80b extend, for example, from a side surface along the long side of the resin package 50.

[0020] The resin package 50 has a first side surface SS1 along its long side, a second side surface SS2 on the opposite side of the first side surface SS1, a third side surface SS3 along the short side, and a fourth side surface SS4 on the opposite side of the third side surface SS3. The input-side terminals 60a to 60h extend externally from the first side surface SS1. The output-side terminals 70a, 70b, 80a, and 80b extend externally from the second side surface SS2.

[0021] The output-side terminals 70a and 70b are provided at a distance from the output-side terminals 80a and 80b in the Y direction. The output-side terminal 70a is provided at one end of the second side surface SS2, and the output-side terminal 80b is provided at the other end of the second side surface SS2. The creepage distance along the second side surface SS2 between the output-side terminal 70b and the output-side terminal 80a is provided to be a length at which a predetermined voltage can be applied between the first lead 70 and the second lead 80. That is, the longer the creepage distance between the output-side terminal 70b and the output-side terminal 80a, the higher the voltage that can be applied between the first lead 70 and the second lead 80 sealed in the resin package 50.

[0022] As shown in FIG. 2(a), the third lead 90 is provided so that its entirety is sealed in the resin package 50. That is, by not exposing the end 90ef of the third lead 90 to the second side surface SS2, it is possible to prevent a decrease in the withstand voltage between the output-side terminal 70b and the output-side terminal 80a. That is, by preventing a material other than the resin from appearing between the output-side terminal 70b and the output-side terminal 80a, the withstand voltage between the two terminals can be stably ensured.

[0023] Also, the mounting bed 70m of the first lead 70 is provided at a position shifted toward the center side of the resin package 50 in the Y direction from the position of the output-side terminal 70a. For example, the output-side terminal 70a has side surfaces 70aa and 70ab that intersect in the Y direction. The side surface 70ab faces the output-side terminal 70b, and the side surface 70aa is located on the opposite side of the side surface 70ab. The mounting bed 70m has a side surface 70ms that faces the third side surface SS3 along the short side of the resin package 50. The position of the side surface 70ms of the mounting bed 70m in the Y direction is closer to the center of the resin package 50 than the position of the side surface 70aa of the output-side terminal 70a in the Y direction. Further, the mounting bed 70m is provided at the center between the first side surface SS1 and the second side surface SS2 of the resin package 50 in the X direction. In this way, the first lead 70 is provided such that the first switching element 10 is sealed at a position closer to the center of the resin package 50.

[0024] The first switching element 10 is preferably sealed, for example, at the center between the first side surface SS1 and the second side surface SS2 of the resin package 50 in the X direction. Also, the distance WD between the first switching element 10 and the third side surface SS3 of the resin package 50 is wider than half of the thickness PT of the resin package 50 in the Z direction.

[0025] The mounting bed 80m of the second lead 80 is also provided at a position closer to the center of the resin package 50. The mounting bed 80m has a side surface 80ms that faces the fourth side surface SS4 along the short side of the resin package 50. The output-side terminal 80b has a side surface 80bb that is located on the opposite side of the output-side terminal 80a in the Y direction. The position of the side surface 80ms of the mounting bed 80m in the Y direction is closer to the center of the resin package 50 than the position of the side surface 80bb of the output-side terminal 80b in the Y direction. Also, the mounting bed 80m is provided to be located at the center between the first side surface SS1 and the second side surface SS2 of the resin package 50 in the X direction. That is, the second switching element 20 is sealed at a position closer to the center of the resin package 50.

[0026] As shown in FIG. 2(b), the light receiving element 30 is mounted on the lower surface of the third lead 90. The third lead 90 includes a mounting bed 90m and an extending portion 90ex. The light receiving element 30 is mounted on the lower surface of the mounting bed 90m. The extending portion 90ex is provided, for example, so as to extend in the X direction from the mounting bed 90m. The third lead 90 has an opening 90th between the mounting bed 90m and the extending portion 90ex. The opening 90th is provided to improve the adhesion between the resin package 50 and the third lead 90.

[0027] The light emitting element 40 is mounted on the mounting bed 60m. The mounting bed 60m is provided, for example, so as to face the mounting bed 90m of the third lead 90 and is connected to the input side terminals 60d and 60f (see FIG. 3(b)). The light receiving element 30 and the light emitting element 40 are arranged to face each other between the mounting bed 60m and the third lead 90. The light receiving element 30 and the light emitting element 40 are arranged so that the light emitted from the light emitting element 40 is detected by the light receiving element 30.

[0028] The light receiving element 30 is electrically connected to the third lead 90 via, for example, a metal wire MW1. The light emitting element 40 is electrically connected to at least one of the input side terminals 60d and 60f via the mounting bed 60m and is also electrically connected to the input side terminal 60e via a metal wire MW2.

[0029] The resin package 50 includes a first resin 51, a second resin 53, and a third resin 55. The first resin 51 seals the first switching element 10, the second switching element 20, and the light receiving element 30 inside thereof. The second resin 53 is molded so as to cover the first resin 51. Further, the second resin 53 seals the third lead 90. The third resin 55 seals the light emitting element 40 on the mounting bed 60m. The first resin 51 is molded so as to cover the third resin 55.

[0030] The first resin 51 and the second resin 53 are, for example, epoxy resins. The third resin 55 is, for example, a silicone resin. The first resin 51 and the third resin 55 transmit the light of the light-emitting element 40. The second resin 53 contains a material that blocks the light of the light-emitting element 40, for example, particles of an oxide, nitride, carbide, or composite compound, or carbon. The coefficient of thermal expansion of the second resin 53 is, for example, larger than that of the first resin 51, and it is desirable to compressively seal the first resin 51.

[0031] The first lead 70 and the second lead 80 are provided so as to extend externally from the first resin 51 through the second resin 53. The third lead 90 extends from the first resin 51 into the second resin 53 but is provided so as not to extend externally from the second resin 53. The third lead 90 is cut after the first resin 51 is molded, and the second resin 53 is molded so as to cover the end 90ef of the third lead 90.

[0032] Figs. 3(a) to (c) are schematic views showing the configuration of the semiconductor device 1 according to the embodiment. Fig. 3(a) is a schematic plan view showing the first lead 70, the second lead 80, and the third lead 90. Fig. 3(b) is a schematic plan view showing the input-side terminals 60a to 60h. Fig. 3(c) is a circuit diagram.

[0033] As shown in Fig. 3(a), the first switching element 10 is mounted on the lower surface of the mount bed 70m of the first lead 70. The second switching element 20 is mounted on the lower surface of the mount bed 80m of the second lead 80. The light-receiving element 30 is mounted on the lower surface of the mount bed 90m of the third lead 90.

[0034] The first switching element 10 has a source terminal ST1 and a gate terminal GT1. The source terminal ST1 is electrically connected to the third lead 90 via, for example, a metal wire MW3. The gate terminal GT1 is electrically connected to the light-receiving element 30 via, for example, a metal wire MW4.

[0035] The second switching element 20 has a source terminal ST2 and a gate terminal GT2. The source terminal ST2 is electrically connected to the third lead 90, for example, via a metal wire MW5. The gate terminal GT2 is electrically connected to the light receiving element 30, for example, via a metal wire MW6.

[0036] The light receiving element 30 is electrically connected to the third lead 90, for example, via a metal wire MW1. The back surface of the light receiving element 30 may be electrically connected to the third lead 90 or may be electrically insulated from the third lead 90. When the back surface of the light receiving element 30 is electrically connected to the third lead 90, it is also possible to omit the metal wire MW1.

[0037] As shown in FIG. 3(b), the input side terminals 60d and 60f are connected to the mount bed 60m. The light emitting element 40 is mounted on the mount bed 60m. The light emitting element 40 is electrically connected to the input side terminals 60d and 60f via the mount bed 60m. An opening 60th is provided between each of the input side terminals 60d and 60f and the mount bed 60m. Also, the light emitting element 40 is electrically connected to the input side terminal 60e via a metal wire MW2.

[0038] The input side terminals 60a to 60c, 60g and 60f are not connected to other components and are provided, for example, to ensure the stability and mounting strength when mounting the semiconductor device 1 on a circuit board or the like.

[0039] As shown in FIG. 3(c), the input side terminal 60e is connected to the anode side of the light emitting element 40. Also, the input side terminal 60d (60f) is connected to the cathode side of the light emitting element 40. The light emitting element 40 is, for example, a light emitting diode (LED).

[0040] The light receiving element 30 includes, for example, a plurality of photodiodes 30r and a control circuit 30f. The photodiodes 30r are connected in series and are electrically connected to the control circuit 30f. The control circuit 30f is, for example, a waveform shaping circuit.

[0041] The first switching element 10 and the second switching element 20 are, for example, MOSFETs. The drain of the first switching element 10 is electrically connected to the output side terminal 70a (70b). The drain of the second switching element 20 is electrically connected to the output side terminal 80a (80b). The source of the first switching element 10 and the source of the second switching element are electrically connected via the third lead 90.

[0042] The anode side output of the light receiving element 30 is electrically connected to the gates of the first switching element 10 and the second switching element. On the other hand, the cathode side output of the light receiving element 30 is electrically connected to the sources of the first switching element and the second switching element via the third lead 90.

[0043] The light emitting element 40 is driven, for example, by a current (input signal) flowing between the input side terminal 60e and the input side terminal 60d, and emits signal light corresponding to the input signal. The light receiving element 30 detects the signal light of the light emitting element 40, and applies an output voltage corresponding to the input signal between the gate and source of the first switching element 10 and between the gate and source of the second switching element 20. Thereby, the electrical conduction between the output side terminal 70a and the output side terminal 80b can be controlled to be turned on and off.

[0044] Figs. 4(a) to (c) are schematic diagrams showing the characteristics of the semiconductor device 1 according to the embodiment. Fig. 4(a) is a schematic plan view showing a semiconductor device according to a comparative example. Fig. 4(b) is a schematic plan view showing the semiconductor device 1.

[0045] Figs. 4(a) and 4(b) are partial plan views showing the arrangement of the mounting bed 70m of the first lead 70. Fig. 4(c) is a graph showing the stress applied to the first switching element 10.

[0046] As shown in FIG. 4(a), in the semiconductor device according to the comparative example, the mounting bed 70m is provided near the interface 50if between the first resin 51 and the second resin 53. For example, the side surface 70ms of the mounting bed 70m facing the side surface along the short side of the resin package 50 is at the same position as the side surface 70aa of the output side terminal 70a in the Y direction. That is, in a top view, the side surface of the mounting bed 70m and the side surface 70aa of the output side terminal 70a are continuously connected without a step therebetween.

[0047] As shown in FIG. 4(b), in the semiconductor device 1, the mounting bed 70m is provided at a position away from the interface 50if between the first resin 51 and the second resin 53. In other words, the mounting bed 70m is preferably provided at a position further away from the side surfaces along the short side and the long side of the resin package 50.

[0048] For example, the mounting bed 70m is provided so as to be located at the center between the first side surface SS1 and the second side surface SS2 of the resin package 50 in the X direction. The first switching element 10 mounted on the mounting bed 70m is also located at the center between the first side surface SS1 and the second side surface SS2 of the resin package 50 in the X direction. Also, the side surface 70ms of the mounting bed 70m is located closer to the center of the resin package 50 than the side surface 70aa of the output side terminal 70a in the Y direction.

[0049] FIG. 4(c) shows the stress applied to the first switching element 10 mounted on the mounting bed 70m. The horizontal axis represents the chip position along the direction from the corner of the package 50 where the second side surface SS2 and the third side surface SS3 are in contact to the center of one half of the package 50, and the vertical axis represents the stress. "CE" in the figure represents the position of the first switching element 10 in the semiconductor device according to the comparative example. Also, "EB" represents the position of the first switching element 10 in the semiconductor device 1.

[0050] FIG. 4(c) shows the stress applied to the first switching element 10 at positions A, B, and C shown in FIGS. 4(a) and (b). The “stress” shown here is due to the difference in the coefficient of thermal expansion of the materials of the first resin 51, the second resin 53, and the first lead 70, respectively.

[0051] Position A corresponds to the corner of the first switching element 10, and position B is the center of the side surface of the first switching element 10 facing the third side surface SS3 of the resin package 50. Further, position C is the center of the side surface of the first switching element 10 facing the second side surface SS2 of the resin package 50.

[0052] As shown in FIG. 4(c), the stress applied to the first switching element 10 of the semiconductor device 1 is smaller than the stress applied to the first switching element 10 of the semiconductor device according to the comparative example. In particular, it can be seen that the stress applied to the first switching element 10 is greatly reduced at the corner (position A) where chip cracking is likely to occur.

[0053] In this way, by sealing the first switching element 10 at a position farther from the first side surface SS1, the second side surface SS2, and the third side surface SS3 of the resin package 50, the stress caused by the temperature change applied to the first switching element 10 can be reduced, and element breakage can be prevented.

[0054] That is, by distancing the first switching element 10 from the edge of the resin package 50 where stress concentration is likely to occur, the stress applied to the first switching element 10 can be reduced. Further, by arranging the mount bed 70m of the first lead 70 at the center between the first side surface SS1 and the second side surface SS2, in a top view of the resin package 50, the first lead 70 approaches the input side terminals 60a to 60d. Thereby, in a top view of the resin package 50, the area of the region including only the first resin 51 and the second resin 53 becomes narrow, and the rigidity against deformation (for example, bending, etc.) of the package 50 in the Z direction can be increased. Thereby, the stress applied to the first switching element 10 can also be reduced.

[0055] Further, the first lead 70 and the second lead 80 have a plurality of openings 70th provided between the second side surface SS2 of the resin package 50 and the mount bed 70m (see Fig. 2(a)). The second lead 80 has a plurality of openings 80th provided between the second side surface SS2 and the mount bed 80m (see Fig. 2(a)). Further, in a top view in the Z direction, a part of the input terminals 60a and 60d overlaps with the mount bed 70m. Also, a part of 60f and 60h overlaps with the mount bed 80m. With such a configuration, the stress applied to the first switching element 10 and the second switching element 20 is equalized, and element breakage can be prevented. Note that at least one of the input terminals 60a to 60d may be configured to overlap with the mount bed 70m in a top view, and at least one of the input side terminals 60f to 60h may be configured to overlap with the mount bed 80m in a top view.

[0056] The first switching element 10 is sealed, for example, at the center of one half in the Y direction of the resin package 50 in a top view. Similarly, the second switching element 20 is sealed at a position farther from the first side surface SS1, the second side surface SS2, and the fourth side surface SS4 of the resin package 50 (see Fig. 2(a)).

[0057] Figs. 5(a) and (b) are schematic views showing a semiconductor device 2 according to a modified example of the embodiment. Fig. 5(a) is a perspective view showing the semiconductor device 2. Fig. 5(b) is a cross-sectional view taken along the FC shown in Fig. 5(a). FC is a cross-section parallel to the Y-Z plane.

[0058] As shown in Fig. 5(a), the semiconductor device 2 also includes a first switching element 10, a second switching element 20, a light receiving element 30, and a light emitting element 40 (not shown), which are encapsulated inside the resin package 50. The first switching element 10 is mounted on the lower surface of the mount bed 70m of the first lead 70, and the second switching element 20 is mounted on the lower surface of the mount bed 80m of the second lead 80. The light receiving element 30 is mounted on the lower surface of the mount bed 90m of the third lead 90. The light emitting element 40 is mounted on the mount bed 60m and arranged to face the light receiving element 30.

[0059] As shown in Fig. 5(b), the semiconductor device 2 further includes metal plates 60n and 60p. The metal plate 60n is provided, for example, at a position facing the mount bed 70m and is connected to the input side terminals 60a to 60c (see Fig. 3(b)). The metal plate 60p is provided, for example, at a position facing the mount bed 80m and is connected to the input side terminals 60g and 60h (see Fig. 3(b)).

[0060] By providing the metal plates 60n and 60p, the stress caused by the expansion and contraction of the first lead 70, the second lead 80, and the third lead 90 can be offset, or dispersed and homogenized in the X, Y, and Z directions. For example, if the widths of the first lead 70, the second lead 80, and the third lead 90 in the Y direction are WUL, WUR, and WUC respectively, and the widths of the metal plates 60n, 60p, and the mount bed 60m in the Y direction are WLL, WLR, and WLC respectively, they are provided such that the sum of WUL, WUR, and WUC is substantially the same as the sum of WLL, WLR, and WLC.

[0061] Furthermore, in a top view, the mounting bed 70m is provided so as to cover the space between the mounting bed 60m and the metal plate 60n. Also, the mounting bed 80m is provided so as to cover the space between the mounting bed 60m and the metal plate 60p. On the other hand, the mounting bed 60m includes, in a top view, a portion located in the space between the first lead 70 and the third lead 90. Also, the mounting bed 60m includes, in a top view, another portion located in the space between the second lead 80 and the third lead 90. Thereby, the deflection of the resin package 50 in the Z direction can be suppressed, and the stress applied to the first switching element 10 and the second switching element 20 can be reduced.

[0062] Although some embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalent scope thereof.

Explanation of Reference Numerals

[0063] 1, 2... semiconductor device, 10... first switching element, 20... second switching element, 30... light receiving element, 30f... control circuit, 30r... photodiode, 40... light emitting element, 50... resin package, 50if... interface, 51... first resin, 53... second resin, 55... third resin, 60a - 60h... input - side terminals, 60m, 70m, 80m, 90m... mounting bed, 60n... first metal plate, 60p... second metal plate, 70... first lead, 80... second lead, 90... third lead, 70a, 70b, 80a, 80b... output - side terminals, 70aa, 70ab, 70ms, 80bb, 80ms... side surfaces, 90ef... end, 90ex... extending portion, 60th, 70th, 80th, 90th... openings, GT1, GT2... gate terminals, MW1 - MW6... metal wires, SS1... first side surface, SS2... second side surface, SS3... third side surface, SS4... fourth side surface, ST1, ST2... source terminals

Claims

1. A light-emitting element, an input-side terminal electrically connected to the light-emitting element, a light-receiving element provided at a position facing the light-emitting element, a first switching element electrically connected to the light-receiving element, wherein the light-receiving element and the first switching element are arranged in a second direction intersecting a first direction from the light-emitting element toward the light-receiving element, the first switching element, a first mounting bed on which the first switching element is mounted, and a first lead including a first output-side terminal electrically connected to the first switching element, a resin package sealing the light-emitting element, the light-receiving element, the first switching element, and the first mounting bed of the first lead, the resin package including a first side surface extending the input-side terminal, a second side surface provided on the opposite side of the first side surface and extending the first output-side terminal, and a third side surface intersecting the second direction, the first side surface and the second side surface of the resin package extend along the second direction, the first switching element is sealed at the center between the first side surface and the second side surface in a third direction from the first side surface toward the second side surface, the first lead has a side surface of the first output-side terminal intersecting the second direction and a side surface of the first mounting bed facing the third side surface of the resin package, the resin package includes, a first resin that seals the light-emitting element, the light-receiving element, the first switching element, and the first mounting bed and transmits light emitted from the light-emitting element, a second resin that covers the first resin and has the first side surface, the second side surface, and the third side surface to shield the light, and has, a semiconductor device in which a distance between an interface between the first resin and the second resin in the second direction and a side surface of the first mounting bed is longer than a distance between the interface and the third side surface.

2. The semiconductor device according to claim 1, wherein a position of the side surface of the first output-side terminal is located between a position of the side surface of the first mounting bed and the third side surface in the second direction.

3. The semiconductor device according to claim 1 or 2, wherein a distance between the third side surface of the resin package and the first switching element is wider than a half of a thickness of the resin package in the first direction.

4. The semiconductor device according to any one of claims 1 to 3, wherein the distance between the first side surface of the resin package and the first switching element is equal to the distance between the second side surface of the resin package and the first switching element.

5. A second switching element sealed within the resin package and electrically connected to the light receiving element, A second lead including a second mount bed on which the second switching element is mounted, and a second output side terminal electrically connected to the second switching element, A third lead on which the light receiving element is mounted, further comprising, the first lead, the second lead, and the third lead are arranged in the second direction, the third lead is provided between the first lead and the second lead, the second mount bed is sealed within the resin package, the second output side terminal extends from the second side surface of the resin package, the resin package has a fourth side surface facing the third side surface in the second direction, the second lead has a side surface intersecting the second direction of the second output side terminal and a side surface of the second mount bed facing the fourth side surface of the resin package, the side surface of the second mount bed is provided at a position closer to the center of the resin package than the position of the side surface of the second output side terminal in the second direction, The semiconductor device according to any one of claims 1 to 4, wherein the second switching element is sealed at the center between the first side surface and the second side surface in a third direction from the first side surface toward the second side surface.

6. A third mount bed on which the light emitting element is mounted and electrically connected to the input side terminal, the third mount bed being sealed within the resin package and facing the third lead in the first direction, further comprising, The semiconductor device according to claim 5, wherein the light emitting element and the light receiving element are arranged to face each other between the third mount bed and the third lead.

7. A first metal plate sealed within the resin package and facing the first mount bed of the first lead in the first direction, A second metal plate sealed within the resin package and facing the second mount bed of the second lead in the first direction, further comprising, the first metal plate, the second metal plate, and the third mount bed are arranged in the second direction, The semiconductor device according to claim 6, wherein the third mount bed is provided between the first metal plate and the second metal plate.

8. The semiconductor device according to claim 7, wherein the sum of the widths in the second direction of the first mount bed of the first lead, the second mount bed of the second lead, and each of the third leads is substantially the same as the sum of the widths in the second direction of the first metal plate, the second metal plate, and the third mount bed.

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