Optoelectronic component

Abstract

The present invention relates to an optoelectronic component including a carrier (200), an optoelectronic semiconductor chip (400) and a metal cover (500). The optoelectronic semiconductor chip (400) has a top (401) with a light emitting surface (410). The optoelectronic semiconductor chip (400) is arranged on a top surface (201) of the carrier (200) such that the light emitting surface (410) faces away from the top surface (201) of the carrier (200). A cover (500) is arranged above the top surface (201) of the carrier (200) and above the optoelectronic semiconductor chip (400). The cover (500) has an opening (510) arranged above the light emitting surface (410). A dam (700) surrounding the light emitting surface (410) is arranged on the top surface (401) of the optoelectronic semiconductor chip (400).

Description

Technical Field

[0001] The present invention relates to optoelectronic components.

[0002] This patent application claims the priority of German Patent Application No. 10 2021 208 179.7, the disclosure of which is incorporated herein by reference.

Background Art

[0003] Optoelectronic components are known in various embodiments and are used for various purposes. For example, it is known to use a light-emitting optoelectronic component as an automobile headlight.

Summary of the Invention

Problems to be Solved by the Invention

[0004] One object of the present invention is to provide an optoelectronic component. This object is achieved by an optoelectronic component having the features of the independent claims. Various improvements are specified in the dependent claims.

Means for Solving the Problems

[0005] The optoelectronic component includes a carrier, an optoelectronic semiconductor chip, and a metal screen. The optoelectronic semiconductor chip has an upper surface with a light-emitting surface. The optoelectronic semiconductor chip is arranged on the upper surface of the carrier such that the light-emitting surface faces away from the upper surface of the carrier. The screen is arranged above the upper surface of the carrier and above the optoelectronic semiconductor chip. The screen has an opening arranged above the light-emitting surface.

[0006] In this optoelectronic component, a screen disposed above the upper surface of the carrier and above the optoelectronic semiconductor chip prevents light such as sunlight incident on the optoelectronic component from the outside from hitting components of the optoelectronic component that are susceptible to influence, for example, components that are susceptible to temperature influence. The light incident on the screen of the optoelectronic component is absorbed or reflected by the screen. The risk of damage to the optoelectronic component due to the incident light is advantageously reduced in such a manner.

[0007] In one embodiment of the optoelectronic component, a housing body is disposed on the upper surface of the carrier. The optoelectronic semiconductor chip is disposed within a cavity of the housing body. The housing body can include, for example, a plastic material. The housing body is advantageously protected from light incident on the optoelectronic component from the outside by the screen.

[0008] In one embodiment of the optoelectronic component, the screen is fixed to the upper surface of the housing body. For example, the screen may be fixed to the upper surface of the housing body by an adhesive. This enables simple and cost-effective manufacture of the optoelectronic component.

[0009] In one embodiment of the optoelectronic component, the screen has a light-absorbing coating. The light-absorbing coating advantageously prevents the light reflected on the screen from hitting other components around the optoelectronic component and having a harmful effect thereon. For example, light absorption on the lower and side surfaces of the screen near the opening of the screen may be desirable to reduce scattered light there. The heat generated in the screen can be effectively dissipated by a metal screen.

[0010] In one embodiment of an optoelectronic component, the screen has a connection element that makes electrical contact conductively with the upper surface of the carrier. The electrical contact can provide a reference potential, for example, a ground potential. The screen of the optoelectronic component is advantageously at the reference potential during operation of the optoelectronic component, resulting in electromagnetic shielding. Thus, the EMC and ESD characteristics of the optoelectronic component can be improved.

[0011] In one embodiment of an optoelectronic component, the screen has a connection element that forms an accessible soldering surface on the lower surface of the optoelectronic component. During operation of the optoelectronic component, the screen can be connected to the ground potential or another reference potential via the soldering surface and the connection element, so electromagnetic shielding can be provided. Thereby, the EMC and ESD characteristics of the optoelectronic component can also be improved.

[0012] In one embodiment of an optoelectronic component, the connection element is formed by a portion of the screen that is bent with respect to the peripheral region of the screen. This advantageously enables particularly simple and cost-effective production of the screen and easy installation of the screen.

[0013] In another embodiment of an optoelectronic component, the connection element is fixed to the screen. Thus, the screen can advantageously be formed without having an opening in the region of the connection element, so the screen can provide particularly complete shielding against light incident from the outside.

[0014] In one embodiment of an optoelectronic component, the screen has sidewalls that laterally enclose the region between the carrier and the screen. Thus, the screen can advantageously provide particularly complete electromagnetic shielding and electrostatic shielding of the component part of the optoelectronic component.

[0015] In one embodiment of the optoelectronic component, the sidewall makes electrical contact conductively with the upper surface (201) of the carrier. The electrical contact can provide a reference potential, for example ground potential. Thus, the screen of the optoelectronic component is advantageously at the reference potential during operation of the optoelectronic component, which can result in electromagnetic shielding. Thereby, the EMC characteristics of the optoelectronic component can be improved.

[0016] In one embodiment of the optoelectronic component, the sidewall surrounds the carrier laterally. Thus, the screen forms a hat that completely covers the remaining component part of the optoelectronic component. Particularly effective shielding of the component part of the optoelectronic component can be achieved in this way.

[0017] In one embodiment of the optoelectronic component, a part of the sidewall forms an accessible soldering surface on the lower surface of the optoelectronic component. Thus, the screen can be connected to ground potential or another reference potential during operation of the optoelectronic component, which can result in effective electromagnetic shielding of the optoelectronic component. Thereby, the EMC characteristics of the optoelectronic component can be improved.

[0018] In one embodiment of the optoelectronic component, the edge region adjacent to the opening of the screen is bent in the direction towards the upper surface of the carrier. Thereby, the screen does not block the electromagnetic radiation emitted from the optoelectronic semiconductor chip, and an opening of the screen with a very small opening area can be formed. The small opening of the screen is accompanied by particularly effective protection of the optoelectronic component from light incident from the outside.

[0019] In one embodiment of an optoelectronic component, a dam adjacent to the light-emitting surface is disposed on the upper surface of the optoelectronic semiconductor chip. The dam can also cover, for example, bond wires connected to the optoelectronic semiconductor chip. The dam can be used to protect the light-emitting surface of the optoelectronic semiconductor chip.

[0020] In one embodiment of an optoelectronic component, a potting material is disposed within a cavity of a housing body. The optoelectronic semiconductor chip is at least partially embedded within the potting material. The potting material can be used to protect the optoelectronic semiconductor chip and the bond wires connected to the optoelectronic semiconductor chip.

[0021] In one embodiment of an optoelectronic component, a conductive layer conductively connected to a screen is disposed on the light-emitting surface. Thus, during operation of the optoelectronic component, the conductive layer can be brought to the same potential as the screen, in particular, for example, ground potential. As a result, the electromagnetic shielding achieved by the screen is made complete also over the region of the openings of the screen.

[0022] In one embodiment of an optoelectronic component, the conductive layer includes a wavelength-converting material. Thus, the conductive layer can advantageously at least partially convert electromagnetic radiation emitted by the optoelectronic semiconductor chip into electromagnetic radiation of a different wavelength.

[0023] In one embodiment of an optoelectronic component, the conductive layer is in direct contact with an electrical contact surface of the optoelectronic semiconductor chip or with bond wires connected to the optoelectronic semiconductor chip. Therefore, the conductive layer and thus also the screen can be connected to a fixed potential, in particular, for example, ground potential.

[0024] In one embodiment of the optoelectronic component, the conductive layer extends on the upper surface of the screen facing away from the carrier. This advantageously represents an easy possibility to conductively connect the conductive layer to the screen.

[0025] In one embodiment of the optoelectronic component, the screen has laser markings. The laser markings can be used, for example, as a label for the optoelectronic component or as a label for the orientation of the optoelectronic component.

[0026] The above characteristics, features, and advantages of the present invention, as well as the manner in which they are achieved, will become clearer and more readily understood in conjunction with the following description of exemplary embodiments, which will be described in more detail in conjunction with the drawings.

Brief Description of the Drawings

[0027]

Figure 1

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Figure 15

Embodiments for Carrying Out the Invention

[0028] FIG. 1 shows a schematic side cross-sectional view of an optoelectronic component 100. The optoelectronic component 100 may be designed, for example, as a multi-pixel light source and may be provided for use in an automotive front headlight.

[0029] The optoelectronic component 100 has an upper surface 101 and a lower surface 102 opposite the upper surface 101. During operation of the optoelectronic component 100, electromagnetic radiation is emitted from the upper surface 101 of the optoelectronic component 100. The lower surface 102 is provided as a mounting surface for electrically contacting the optoelectronic component 100.

[0030] The optoelectronic component 100 includes a carrier 200. The carrier 200 may also be referred to as a substrate. The carrier 200 can be designed, for example, as a single-layer or multi-layer printed circuit board (PCB, MCB), as a ceramic carrier, or as a plastic carrier having an embedded conductor frame. The carrier 200 has an upper surface 201 and a lower surface 202 opposite the upper surface 201. The lower surface 202 of the carrier 200 forms the lower surface 102 of the optoelectronic component 100.

[0031] On the upper surface 201 of the carrier 200, an upper surface metal coating 210 having an upper contact surface 211 is disposed. On the lower surface 202 of the carrier 200, a lower surface metal coating 220 having a lower contact surface 221 is disposed. The lower contact surface 221 is provided for electrically contacting the optoelectronic component 100. The portion of the upper surface metal coating 210 and the portion of the lower surface metal coating 220 are conductively connected to each other via a through contact 230 extending through the carrier 200.

[0032] On the upper surface 201 of the carrier 200, a housing body 300 having an upper surface 301 and a lower surface 302 opposite to the upper surface 301 is disposed. In this case, the housing body 300 is disposed on the upper surface 201 of the carrier 200 such that the lower surface 302 of the housing body 300 faces the upper surface 201 of the carrier 200. The housing body 300 suitably includes an electrically insulating material, for example, a plastic material. The housing body 300 may be disposed on the upper surface 201 of the carrier 200, for example, by a molding method. However, the housing body 300 may also be, for example, pre-manufactured and adhesively bonded to the upper surface 201 of the carrier 200. The housing body 300 can also be formed integrally with the carrier 200.

[0033] The housing body 300 has a chip cavity 310. The chip cavity 310 forms an opening in the housing body 300, whereby the upper surface 201 of the carrier 200 is exposed in the region of the chip cavity 310. The upper contact surface 211 of the upper surface metal coating 210 of the carrier 200 is also accessible in the region of the chip cavity 310.

[0034] The optoelectronic semiconductor chip 400 is disposed in the chip cavity 310 of the housing body 300 on the upper surface 201 of the carrier 200. The optoelectronic semiconductor chip 400 has an upper surface 401 and a lower surface 402 opposite to the upper surface 401. The light emitting surface 410 of the optoelectronic semiconductor chip 400 is formed on the upper surface 401 of the optoelectronic semiconductor chip 400. The optoelectronic semiconductor chip 400 is disposed on the upper surface 201 of the carrier 200 such that the light emitting surface 410 faces the side opposite to the upper surface 201 of the carrier 200.

[0035] The optoelectronic semiconductor chip 400 may be designed, for example, as a multi-pixel chip. In this case, the light emitting surface 410 has a plurality of individually activatable image points (pixels). However, the light emitting surface 410 can also be designed as an integrated surface without division. The optoelectronic semiconductor chip 400 may also be designed as a system-on-chip (SoC) having an integrated driver component. In this case, for example, the optoelectronic semiconductor chip 400 can be designed as a driver chip on which an LED array is disposed.

[0036] The optoelectronic semiconductor chip 400 has an electrical contact surface 420 on its upper surface 401. The electrical contact surface 420 is conductively connected to the upper contact surface 211 on the upper surface 201 of the carrier 200 via a bond wire 425. Thereby, the optoelectronic semiconductor chip 400 is electrically contacted. The optoelectronic semiconductor chip 400 may also have one or more electrical contact surfaces on its lower surface 402, which are conductively connected to one or more of the upper contact surfaces 211 of the carrier 200, for example, by soldering or adhesive bonding.

[0037] A metal screen 500 is disposed on the upper surface 301 of the housing body 300 of the optoelectronic component 100. Therefore, the screen 500 is also disposed above the upper surface 201 of the carrier 200 and above the optoelectronic semiconductor chip 400. The screen 500 has an upper surface 501 and a lower surface 502 opposite to the upper surface 501. The lower surface 502 of the screen 500 faces the upper surface 301 of the housing body 300, the upper surface 201 of the carrier 200, and the upper surface 401 of the optoelectronic semiconductor chip 400. The upper surface 501 of the screen 500 forms the upper surface 101 of the optoelectronic component 100. The screen 500 is preferably fixed to the upper surface 301 of the housing body 300. For example, the screen 500 can be adhesively bonded to the upper surface 301 of the housing body 300.

[0038] The screen 500 includes a metal material. This material is preferably selected so that its coefficient of thermal expansion corresponds as closely as possible to the coefficient of thermal expansion of the housing body 300 in order to avoid stress and deformation caused by different thermal expansions during the operation of the optoelectronic component 100 as much as possible. The screen 500 can be manufactured, for example, from a thin metal plate.

[0039] The screen 500 has an opening 510 disposed above the light emitting surface 410 of the optoelectronic semiconductor chip 400. Therefore, the electromagnetic radiation emitted during the operation of the optoelectronic component 100 from the light emitting surface 410 of the optoelectronic semiconductor chip 400 can pass through the opening 510 of the screen 500 and can be emitted at the upper surface 101 of the optoelectronic component 100.

[0040] The size of the opening 510 is such that the screen 500 causes a minimal amount of light shielding of the radiation emitted by the optoelectronic semiconductor chip 400, while at the same time, the components of the optoelectronic component 100 are dimensioned such that they are shielded as completely as possible by the screen 500 from radiation incident on the optoelectronic component 100 from the outside.

[0041] Radiation incident on the optoelectronic component 100 from the outside at the location where the optoelectronic component 100 is installed, such as sunlight, is absorbed or reflected by the screen 500. For this purpose, a light-absorbing coating 560 can be arranged on the upper surface 501 of the screen 500. The light-absorbing coating 560 can also extend over other parts of the screen 500, or can be provided only on other parts of the screen 500 to reduce the scattering of the radiation emitted by the optoelectronic semiconductor chip 400. For example, the light-absorbing coating 560 can be arranged on the lower surface 502 and also on the side surface of the screen 500 near the opening 510. However, such a coating can also be omitted. Excessive local heating due to radiation incident from the outside and the resulting damage to the optoelectronic component 100 are prevented by the thermal conductivity of the metal screen 500.

[0042] The bonding wire 425 extending into the chip cavity 310 can be mostly covered by the screen 500, and as a result, it is protected from damage by external effects. This may make it possible to omit further measures for protecting the bonding wire 425.

[0043] Hereinafter, with reference to FIGS. 2 to 15, further modified examples of the optoelectronic component 100 will be described. Basically, only how these modified examples differ from the modified example of the optoelectronic component 100 shown in FIG. 1 will be described. In other respects, the above description of the optoelectronic component 100 also applies to the modified examples of the optoelectronic component 100 described below.

[0044] In the modified examples of the optoelectronic component 100 described below, the screen 500 is used not only for the function of protecting from externally incident radiation (such as sunlight), but also for electromagnetically shielding the optoelectronic component 100. Therefore, the modified examples of the optoelectronic component 100 described below can have advantageous characteristics with respect to electromagnetic compatibility (EMC characteristics). This is reasonable especially when the optoelectronic component 100 has a high-frequency component, for example, a high-frequency component integrated in the optoelectronic semiconductor chip 400.

[0045] The electromagnetic shielding provided by the screen 500 is achieved in the modified examples of the optoelectronic component 100 described below in that the conductive screen 500 is electrically connected to the defined electrical reference potential of the optoelectronic component 100, particularly, for example, the ground potential. However, the reference potential may be, for example, the VDD potential.

[0046] Figure 2 shows a schematic side cross-sectional view of a modified example of the optoelectronic component 100. In the modified example of the optoelectronic component 100 shown in Figure 2, the screen 500 has two connection elements 600 that are conductively in contact with the reference contact 215 on the upper surface 201 of the carrier 200. As an alternative, only one such connection element 600, or two or more such connection elements 600, can also be provided. The reference contact 215 is formed by the upper contact surface 211 of the upper surface metal coating 210 of the carrier 200, which provides a defined reference potential, for example, a ground potential or a VDD potential.

[0047] The connection element 600 is formed by a portion 610 of the screen 500 that is bent with respect to the peripheral region of the screen 500. Therefore, the connection element 600 has the form of a spring tongue. The bent portion 610 forming the connection element 600 can be freely punched out with respect to the peripheral region of the screen 500, for example.

[0048] The electrical contact between the connection element 600 and the reference contact 215 on the upper surface 201 of the carrier 200 can be established because the contact region 620 formed at the longitudinal end of the connection element 600 is pressed against the upper contact surface 211 of the upper surface metal coating 210 of the carrier 200 by a spring force, and that surface forms the reference contact 215. This brings the advantage that it is possible to compensate for thermal deformation that occurs during the operation of the optoelectronic component 100. On the other hand, there may also be a rigid mechanical connection, for example, a connection by spot welding, between the contact region 620 and the upper contact surface 211 forming the reference contact 215.

[0049] In the example shown in Figure 2, each connection element 600 extends through a respective separate connection element cavity 320 within the housing body 300. However, a common connection element cavity 320 can also be provided for all the connection elements 600. As an alternative, the connection elements 600 can be arranged within the chip cavity 310.

[0050] FIG. 3 shows a schematic top view of the top surface 101 of a modified example of the optoelectronic component 100. Similar to the modified example of FIG. 2, the modified example of FIG. 3 has two connection elements 600 and shows possible arrangements of these connection elements 600. The connection elements 600 are arranged on both sides of the optoelectronic semiconductor chip 400 and are oriented antiparallel. In this way, the spring forces generated by the connection elements 600 advantageously balance. However, other arrangements of the connection elements 600 are also possible.

[0051] FIG. 4 shows a schematic top view of the top surface 101 of a further modified example of the optoelectronic component 100. In the modified example of FIG. 4, the optoelectronic component 100 has three optoelectronic semiconductor chips 400, and each chip is arranged adjacent to each other within a separate chip cavity 310. Accordingly, the screen 500 has three openings 510 arranged above the light-emitting surface 410 of the optoelectronic semiconductor chip 400. Six connection elements 600 are provided, two of which are arranged on both sides of the optoelectronic semiconductor chip 400 and are oriented in opposite directions in each case. Thus, the modified example of the optoelectronic component 100 shown in FIG. 4 can theoretically be divided into three parts, and each part is formed in the same manner as the modified example of the optoelectronic component 100 shown in FIG. 3.

[0052] The three optoelectronic semiconductor chips 400 of the modified example of the optoelectronic component 100 shown in FIG. 4 can be designed, for example, to emit electromagnetic radiation having different wavelengths. For example, the three optoelectronic semiconductor chips 400 can be designed to emit electromagnetic radiation having the colors of red light, green light, and blue light.

[0053] Of course, a different number of optoelectronic semiconductor chips 400 are also possible. The optoelectronic semiconductor chips 400 may be arranged in different geometric arrangements relative to each other. Some or all of the optoelectronic semiconductor chips 400 can be arranged within a common chip cavity 310 of the housing body 300.

[0054] FIG. 5 shows a schematic side cross-sectional view of a further variant of the optoelectronic component 100. The variant shown in FIG. 5 also has two connecting elements 600, which conductively connect the screen 500 to the reference contact 215 on the upper surface 201 of the carrier 200. Of course, a different number of connecting elements 600 and different geometric arrangements of the connecting elements 600 are equally possible.

[0055] In the variant shown in FIG. 5, the connecting element 600 is formed as a separate element and is fixed at the fixing portion 630 to the lower surface 502 of the screen 500. This fixing can be carried out, for example, by soldering, welding or adhesive bonding. Due to the design of the connecting element 600 as a separate element, the screen 500 in the variant of the optoelectronic component 100 shown in FIG. 5 does not have an opening in the region of the connecting element 600. Thus, the screen 500 in the variant shown in FIG. 5 can provide particularly effective protection against radiation such as sunlight incident from the outside.

[0056] In the variant of the optoelectronic component 100 shown in FIG. 5, the connecting element 600 is arranged within the chip cavity 310 of the housing body 300 together with the optoelectronic semiconductor chip 400. Of course, it is also possible to arrange the connecting element 600 within a separate connecting element cavity 320 of the housing body 300.

[0057] Figure 6 shows a schematic side cross-sectional view of a further modified example of the optoelectronic component 100. In the modified example shown in Figure 6, the screen 500 has an upper layer portion 580 and a lower layer portion 590, which are each formed as thin plates and are arranged flat on top of each other. Here, the upper layer portion 580 and the lower layer portion 590 can be connected to each other, for example, via an adhesive bond. The upper surface of the upper layer portion 580 forms the upper surface 501 of the screen 500. The lower surface of the lower layer portion 590 forms the lower surface 502 of the screen 500.

[0058] The modified example shown in Figure 6 has two connecting elements 600 formed by a portion 610 of the lower layer portion 590 of the screen 500 that is bent with respect to the surrounding area of the lower layer portion 590 of the screen 500. The upper layer portion 580 of the screen 500 is also closed in the area of its connecting element 600. Thus, the screen 500 in the modified example of the optoelectronic component 100 shown in Figure 6 also does not have an opening in the area of the connecting element 600 as a whole.

[0059] Figure 7 shows a schematic side cross-sectional view of a further modified example of the optoelectronic component 100. In the modified example shown in Figure 7, as in the case of the modified example of Figure 2, the connecting element 600 is again formed by a portion 610 that is bent with respect to the surrounding area of the screen 500. However, the connecting element 600 can also be formed as a separate element fixed on the screen 500, as in the modified example of Figure 5, or can be formed from the lower layer portion 590 of the screen 500, as in the modified example of Figure 6. In the modified example of Figure 7, the connecting element 600 also extends through a separate connecting element cavity 320 of the housing body 300 in each case, but alternatively, it can also be arranged in the chip cavity 310.

[0060] In a modification of the optoelectronic component 100 shown in FIG. 7, the connection element 600 is not in contact with the reference contact on the upper surface 201 of the carrier 200. Instead, the connection element 600 extends through the opening 240 of the carrier 200, each having a solderable surface 640 accessible to the lower surface 102 of the optoelectronic component 100. During the assembly of the optoelectronic component 100, these solderable surfaces 640 are conductively connected to a ground potential or another fixed potential.

[0061] In the region of the opening 240 of the carrier 200, a fixing material 245 for fixing the connection element 600 can be arranged. The fixing material 245 can be, for example, a silver conductive adhesive. On the other hand, the fixing material 245 may be an electrically insulating material and can be used to electrically insulate the connection element 600 from the carrier 200, the upper surface metal coating 210, and the lower surface metal coating 220.

[0062] FIG. 8 shows a schematic side cross-sectional view of a further modification of the optoelectronic component 100. In the modification shown in FIG. 8, the connection element 600 of the screen 500 is designed in the same way as the modification of the optoelectronic component 100 shown in FIG. 2. However, the connection element 600 can also be designed like the modifications of the optoelectronic component 100 shown in FIGS. 5, 6, or 7.

[0063] In the modification of the optoelectronic component 100 shown in FIG. 8, the screen 500 has side walls 530 oriented perpendicular to the other parts of the screen 500. As a result, the screen 500 has an overall cup shape. The side walls 530 laterally surround the region 110 between the carrier 200 and the screen 500. Thus, the cup-shaped screen 500 also surrounds the housing body 300. In this way, the screen 500 in the modification of the optoelectronic component 100 shown in FIG. 8 produces particularly effective electromagnetic shielding. In the modification shown in FIG. 8, the side walls 530 of the screen 500 rest on the upper surface 201 of the carrier 200.

[0064] Figure 9 shows a schematic side cross-sectional view of a further modified example of the optoelectronic component 100. In the modified example shown in Figure 9, the screen 500 also has the side wall 530 described with reference to Figure 8, and this side wall laterally surrounds the region 110 between the carrier 200 and the screen 500. However, the screen 500 of the modified example shown in Figure 9 does not have the connection element 600. Instead, the side wall 530 of the screen 500 is pressed against the upper surface 201 of the carrier 200 to form a contact region 540 that is conductively in contact with the reference contact 215 on the upper surface 201 of the carrier 200. Therefore, the screen 500 is also conductively connected to the potential of the reference contact 215 in the modified example shown in Figure 9.

[0065] In the modified example of the optoelectronic component 100 shown in Figure 9, the housing body 300 does not exist. This is possible because the screen 500 surrounds the region 110 between the carrier 200 and the screen 500, and as a result, protects that region from external influences. The housing body 300 can also be omitted in the modified example of the optoelectronic component 100 shown in Figure 8. However, as an alternative, the modified example of the optoelectronic component 100 shown in Figure 9 can also have such a housing body 300.

[0066] Figure 10 shows a schematic side cross-sectional view of a further modified example of the optoelectronic component 100. The modified example shown in Figure 10 differs from the modified example of Figure 9 in that the contact region 540 of the side wall 530 of the screen 500 is extended by an additional color. This facilitates mechanically and conductively connecting the contact region 540 to the upper surface 201 of the carrier 200 and the reference contact 215 disposed on the upper surface 201 of the carrier 200. The connection can be, for example, an adhesive bond.

[0067] Figure 11 shows a schematic side cross-sectional view of a further variant of the optoelectronic component 100. In the variant of Figure 11, there is a housing body 300. The screen 500 is fixed to the upper surface 301 of the housing body 300. The screen 500 does not have a connecting element 600, but instead has a side wall 530 that laterally surrounds the region 110 between the carrier 200 and the screen 500 again. In addition, the side wall 530 also laterally surrounds the carrier 200 in the variant of Figure 11. Therefore, the side wall 530 of the screen 500 does not sit on the upper surface 201 of the carrier 200. Instead, the side wall 530 has a soldering surface 550, which is arranged in a common plane with the lower contact surface 221 of the lower surface 202 of the carrier 200, and is therefore accessible at the lower surface 102 of the optoelectronic component 100. During the assembly of the optoelectronic component 100, the soldering surface 550 of the screen 500 is conductively connected to the reference potential.

[0068] Figure 12 shows a schematic side cross-sectional view of a further variant of the optoelectronic component 100. The variant shown in Figure 12 is designed in the same way as the variant shown in Figure 11. Therefore, the side wall 530 of the screen 500 also laterally surrounds the carrier 200 in the variant shown in Figure 12 and has a portion that forms a soldering surface 530 accessible at the lower surface 102 of the optoelectronic component 100. In addition, the side wall 530 of the screen 500 is mechanically connected to the carrier 200 in this region of the variant shown in Figure 12, for example, via a clamped or crimped connection. Therefore, in the variant shown in Figure 12, the housing body 300 can also be optionally omitted.

[0069] Figure 13 shows a schematic side cross-sectional view of a further variant of the optoelectronic component 100. In the variant shown in Figure 13, the screen 500 is designed in the same way as in the case of the variant of Figure 9 and the like. However, the screen 500 can also be designed like one of the other described variants.

[0070] Also, in a modified example of the optoelectronic component 100 shown in FIG. 13, an edge region 520 of the screen 500 adjacent to the opening 510 of the screen 500 is bent in a direction toward the upper surface 201 of the carrier 200 and the upper surface 401 of the optoelectronic semiconductor chip 400. Therefore, in the modified example shown in FIG. 13, the size of the opening 510 of the screen 500 can be reduced without the electromagnetic radiation emitted to the light emitting surface 410 of the optoelectronic semiconductor chip 400 being blocked by the screen 500. Even more effective protection of the bond wires 425 disposed in the region 110 between the carrier 200 and the screen 500 can also be achieved by bending the edge region 520.

[0071] FIG. 14 shows a top view of the upper surface 101 of a further modified example of the optoelectronic component 100. In the modified example shown in FIG. 14, the edge region 520 adjacent to the opening 510 of the screen 500 is also bent in a direction toward the upper surface 201 of the carrier 200. In FIG. 14, it can be seen that the screen 500 has slots 521 originating from the corners of the rectangular opening 510 for this purpose. The edge region 520 is divided into four wings by the slots 521, and these are bent in the direction toward the upper surface 201 of the carrier 200 and the direction toward the upper surface 401 of the optoelectronic semiconductor chip 400, respectively.

[0072] Alternatively, the edge region 520 of the opening 510 of the screen 500 can be bent by deeply drawing it in the direction toward the upper surface 201 of the carrier 200. Therefore, it becomes unnecessary to provide the slots 521 in this way, thereby achieving even more complete shielding of the component part of the optoelectronic component 100 by the screen 500.

[0073] The bent edge region 520, like the screen 500 of the modified example of the optoelectronic component 100 shown in FIG. 13, can also be provided in the modified example of the optoelectronic component 100 described based on other figures.

[0074] In the modified example of the optoelectronic component 100 shown in FIG. 13, a dam 700 adjacent to the light emitting surface 410 is disposed on the upper surface 401 of the optoelectronic semiconductor chip 400. The dam 700 preferably includes an electrically insulating material. In the illustrated example, the dam 700 at least partially covers the electrical contact surface 420 of the upper surface 401 of the optoelectronic semiconductor chip 400 such that the bond wire 425 connected to the electrical contact surface 420 is at least partially embedded in the dam 700. Alternatively, the dam 700 can be disposed between the electrical contact surface 420 and the light emitting surface 410 of the optoelectronic semiconductor chip 400 such that the electrical contact surface 420 and the bond wire 425 connected to the electrical contact surface 420 are disposed outside the region bordered by the dam 700.

[0075] Also, in the modified example of the optoelectronic component 100 shown in FIG. 13, a potting material 710 is disposed in the chip cavity 310 of the housing body 300. The potting material 710 covers the upper surface 201 of the carrier 200 accessible in the region of the chip cavity 310 and extends from the wall of the housing body 300 defining the chip cavity 310 to the optoelectronic semiconductor chip 400, whereby the optoelectronic semiconductor chip 400 is at least partially embedded in the potting material 710. Accordingly, the bond wire 425 extending between the electrical contact surface 420 of the optoelectronic semiconductor chip 400 and the upper contact surface 211 of the upper surface 201 of the carrier 200 is also at least partially embedded in the potting material 710 and is thus protected from damage as a result.

[0076] The potting material 710 may be arranged, for example, in the chip cavity 310 by a metering method. In this case, the dam 700 may be used to prevent the light-emitting surface 410 of the upper surface 401 of the optoelectronic semiconductor chip 400 from being covered by the potting material 710. On the other hand, depending on the position of the dam 700, the potting material 710 may cover the electrical contact surface 420 of the upper surface 401 of the optoelectronic semiconductor chip 400, and as a result, it may provide further protection for the bond wire 425 connected to the electrical contact surface 420. In some cases, it is also possible to arrange the potting material 710 in the chip cavity 310 without providing the dam 700.

[0077] The dam 700 and the potting material 710 can also be provided in all other variants of the optoelectronic component 100 having a housing body 300 with a chip cavity 310.

[0078] In the variant of the optoelectronic component 100 shown in FIG. 14, a laser marking 570 is provided on the upper surface 501 of the screen 500 forming the upper surface 101 of the optoelectronic component 100. The laser marking 570 can be used, for example, to identify the orientation of the optoelectronic component 100 or the type of the optoelectronic component 100. A corresponding laser marking 570 can also be provided in other variants of the optoelectronic component 100.

[0079] FIG. 15 shows a schematic side cross-sectional view of a further modified example of the optoelectronic component 100. In this modified example, the screen 500 has a connection element 600 disposed within the connection element cavity 320 of the housing body 300, similar to the modified example of the optoelectronic component 100 shown in FIG. 2. Further, the screen 500 has a side wall 530 that laterally surrounds the region 110 between the screen 500 and the carrier 200. Also, the edge region 520 of the opening 510 of the screen 500 is bent in a direction toward the carrier 200 and the optoelectronic semiconductor chip 400, as described with reference to FIGS. 13 and 14. Of course, the screen 500 can also be formed to have the features described with reference to other drawings.

[0080] As described with reference to FIG. 13, on the upper surface 401 of the optoelectronic semiconductor chip 400, a dam 700 is disposed adjacent to the light emitting surface 410. The potting material 710 present in the modified example of FIG. 13 is not present in the modified example of FIG. 15, but may be present as well. Alternatively, the dam 700 can be omitted.

[0081] The modified example of the optoelectronic component 100 shown in FIG. 15 has a conductive layer 800 disposed on the light emitting surface 410 on the upper surface 401 of the optoelectronic semiconductor chip 400. The conductive layer 800 is conductively connected to the screen 500. Thus, the conductive layer 800 also completes the electromagnetic shielding achieved by the screen 500 in the region above the light emitting surface 410 where the screen 500 has the opening 510.

[0082] Preferably, the conductive layer 800 includes a wavelength conversion material 810. As a result, the conductive layer 800 can be used to convert at least partially the electromagnetic radiation emitted by the optoelectronic semiconductor chip 400 at the light emitting surface 410 into electromagnetic radiation of a different wavelength.

[0083] The conductivity of the conductive layer 800 can be achieved, for example, by conductive particles mixed in the wavelength conversion material 810. Conversely, the wavelength conversion material 810 can also be introduced into an already conductive matrix, such as a conductive polymer. The conductive layer 800 can also be composed of multiple layers, for example, it can have at least one transparent conductive layer and one wavelength conversion layer. Furthermore, it is possible to provide a conductive grid or network disposed above or below the layer containing the wavelength conversion material 810. The wavelength conversion material 810 can also be disposed within the mesh of this conductive grid. Here, the mesh size of the conductive grid or network can be adapted to the electromagnetic frequency to be shielded. When the light-emitting surface 410 of the optoelectronic semiconductor chip 400 is divided into individual pixels, the mesh size of the conductive grid or network can also be adapted to the size of these pixels. Therefore, the contrast between individual pixels of the light-emitting surface 410 can be further increased.

[0084] In a variant of the optoelectronic component 100 shown in FIG. 15, since the conductive layer 800 continuously extends up to the upper surface 501 of the screen 500, the conductive layer 800 is conductively connected to the screen 500. Therefore, the conductive layer 800 forms a coherent layer extending across the light-emitting surface 410 of the optoelectronic semiconductor chip 400 and a portion of the upper surface 501 of the screen 500. For this purpose, the dam 700 and the edge region 520 of the opening 510 of the screen 500 are designed and arranged such that the edge region 520 of the opening 510 of the screen 500 directly contacts the dam 700. The conductive layer 800 extends up to the upper surface 501 of the screen 500 across the light-emitting surface 410, a portion of the dam 700, and the edge region 520 of the screen 500. The conductive layer 800 can be applied, for example, by spraying, in this variant of the optoelectronic component 100 after the screen 500 is disposed on the housing body 300 and the optoelectronic semiconductor chip 400.

[0085] Alternatively, the conductive layer 800 may be disposed on the light emitting surface 410 of the optoelectronic semiconductor chip 400 and at least partially disposed on the potting material 710 disposed within the chip cavity 310 as seen in the variant of FIG. 13. Here, the conductive layer 800 may optionally extend over at least a portion of the upper surface 310 of the housing body 300. In this variant, the conductive layer 800 is deposited, for example, by spraying, before the screen 500 is disposed. Thereafter, the screen 500 is disposed and an electrical connection is established between the screen 500 and the conductive layer 800. This electrical connection may be provided by direct contact between the conductive layer 800 and the lower surface 502 of the screen 500 or by a conductive material such as a conductive adhesive disposed between the lower surface 502 of the screen 500 and the conductive layer 800. In this variant of the optoelectronic component 100, it must be ensured that no unwanted short circuit occurs between the conductive layer 800 and the bond wire 425.

[0086] Furthermore, it is possible to dispose the conductive layer 800 on the upper surface 401 of the optoelectronic semiconductor chip 400 such that direct contact occurs between the conductive layer 800 and the electrical contact surface 420 of the optoelectronic semiconductor chip 400 connected to the potential of the screen 500, for example, the ground potential. It may further be possible that the conductive layer 800 is connected to the potential of the screen 500 via a bond wire. This may be either one of the bond wires 425 connected to the electrical contact surface 420 of the optoelectronic semiconductor chip 400 or a further bond wire.

[0087] The present invention has been illustrated and described in more detail based on preferred exemplary embodiments. However, the present invention is not limited to the disclosed examples. Rather, those skilled in the art can derive other variants therefrom without departing from the scope of protection of the present invention.

Description of Reference Numerals

[0088] 100 Optoelectronic Component 101 Upper Surface 102 Lower Surface 110 Region 200 Carrier 201 Upper Surface 202 Lower Surface 210 Upper Metal Coating 211 Upper Contact Surface 215 Reference Contact 220 Lower Metal Coating 221 Lower Contact Surface 230 Through Contact 240 Opening 245 Fixing Material 300 Housing Body 301 Upper Surface 302 Lower Surface 310 Chip Cavity 320 Connection Element Cavity 400 Optoelectronic Semiconductor Chip 401 Upper Surface 402 Lower Surface 410 Light Emitting Surface 420 Electrical Contact Surface 425 Bonding Wire 500 Screen 501 Upper Surface 502 Lower Surface 510 Opening 520 Edge Region 521 Slot 530 Side Wall 540 Contact Region 550 Soldering Surface 560 Light Absorbing Coating 570 Laser Marking 580 Upper Layer Portion 590 Lower Layer Portion 600 Connection Element 610 Bending Portion 620 Contact Region 630 Fixing Portion 640 Soldering Surface 700 Dam 710 Potting Material 800 Conductive layer 810 Wavelength conversion material

Claims

1. An optoelectronic component (100) having a carrier (200), an optoelectronic semiconductor chip (400), and a metal screen (500), wherein the optoelectronic semiconductor chip (400) has an upper surface (401) with a light-emitting surface (410), a dam (700) adjacent to the light-emitting surface (410) is disposed on the upper surface (401) of the optoelectronic semiconductor chip (400), the optoelectronic semiconductor chip (400) is disposed on the upper surface (201) of the carrier (200) such that the light-emitting surface (410) faces away from the upper surface (201) of the carrier (200), the screen (500) is disposed above the upper surface (201) of the carrier (200) and above the optoelectronic semiconductor chip (400), the screen (500) has an opening (510) disposed above the light-emitting surface (410), the optoelectronic component (100), wherein a conductive layer (800) electrically connected to the screen (500) is disposed on the light-emitting surface (410).

2. a housing body (300) is disposed on the upper surface (201) of the carrier (200), The optoelectronic component (100) according to claim 1, wherein the optoelectronic semiconductor chip (400) is disposed within a cavity (310) of the housing body (300).

3. The optoelectronic component (100) according to claim 2, wherein the screen (500) is fixed to the upper surface (301) of the housing body (300).

4. The optoelectronic component (100) according to claim 1, wherein the screen (500) has a light absorption coating (560).

5. The optoelectronic component (100) according to claim 1, wherein the screen (500) has a connection element (600) that makes electrical contact (215) and is conductively in contact with the upper surface (201) of the carrier (200).

6. The optoelectronic component (100) according to claim 1, wherein the screen (500) has a connecting element (600) that forms an accessible soldering surface (640) on the lower surface (102) of the optoelectronic component (100).

7. The optoelectronic component (100) according to claim 5, wherein the connecting element (600) is formed by a portion (610) of the screen (500) that is bent with respect to a peripheral region of the screen (500).

8. The optoelectronic component (100) according to claim 5, wherein the connecting element (600) is fixed to the screen (500).

9. The optoelectronic component (100) according to claim 1, wherein the screen (500) has a side wall (530) that laterally surrounds a region (110) between the carrier (200) and the screen (500).

10. The optoelectronic component (100) according to claim 9, wherein the side wall (530) is in conductive contact with an electrical contact (215) on the upper surface (201) of the carrier (200).

11. The optoelectronic component (100) according to claim 9, wherein the side wall (530) laterally surrounds the carrier (200).

12. The optoelectronic component (100) according to claim 11, wherein a portion of the side wall (530) forms an accessible soldering surface (550) on the lower surface (102) of the optoelectronic component (100).

13. The optoelectronic component (100) according to claim 1, wherein an edge region (520) adjacent to the opening (510) of the screen (500) is bent in a direction toward the upper surface (201) of the carrier (200).

14. A potting material (710) is disposed in a cavity (310) of the housing body (300), The optoelectronic component (100) according to claim 2, wherein the optoelectronic semiconductor chip (400) is at least partially embedded in the potting material (710).

15. The optoelectronic component (100) according to claim 1, wherein the conductive layer (800) comprises a wavelength conversion material (810). **Claim 16** The optoelectronic component (100) according to claim 1, wherein the conductive layer (800) is in direct contact with an electrical contact surface (420) of the optoelectronic semiconductor chip (400) or a bond wire (425) connected to the optoelectronic semiconductor chip (400). **Claim 17** The optoelectronic component (100) according to claim 1, wherein the conductive layer (800) extends to an upper surface (501) of the screen (500) facing away from the carrier (200). **Claim 18** The optoelectronic component (100) according to claim 1, wherein the screen (500) has a laser marking (570).

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