Substrate processing apparatus, heat transfer member, and substrate processing method

Abstract

Provided is a technique capable of improving the separability between a heat transfer member and a member that contacts the heat transfer member. 【Solution means】A chamber, a substrate support portion disposed in the chamber, and a heat transfer member disposed on the substrate support portion, the heat transfer member comprising a sticky silicon-containing sheet, the silicon-containing sheet having an upper surface coated with a carbon-containing film, and the heat transfer member. A substrate processing apparatus is provided. ​

Description

[Technical field]

[0001] SUMMARY Exemplary embodiments of the present disclosure relate to a substrate processing apparatus, a heat transfer member, and a substrate processing method. [Background technology]

[0002] Patent Document 1 discloses a technique relating to a heat transfer sheet containing silicon. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2012-9563 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique capable of improving the separability between a heat transfer member and a member in contact with the heat transfer member. do. [Means for solving the problem]

[0005] In one exemplary embodiment of the present disclosure, a chamber and a substrate support disposed within the chamber are provided. a heat transfer member disposed on the substrate support, the heat transfer member being made of a material containing adhesive silicone; a silicon-containing sheet having an upper surface coated with a carbon-containing film; A substrate processing apparatus is provided comprising: Effect of the Invention

[0006] According to one exemplary embodiment of the present disclosure, a heat transfer member and a member abutting the heat transfer member are separated. It is possible to provide a technique that can improve the performance. [Brief description of the drawings]

[0007]

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Embodiments for Carrying Out the Invention

[0008] Hereinafter, each embodiment of the present disclosure will be described in detail with reference to the drawings. In each drawing the same or similar elements are denoted by the same reference numerals, and redundant explanations are omitted. Unless otherwise specified Unless otherwise specified, the positional relationships such as up, down, left, right, etc. will be described based on the positional relationships shown in the drawings. The ratios do not represent actual ratios, and actual ratios are not limited to those shown. There is none.

[0009] <Example of plasma processing system configuration> FIG. 1 is a diagram for explaining a configuration example of a plasma processing system. In one embodiment, The plasma processing system includes a plasma processing device 1 and a control unit 2. The system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a chamber 10, a substrate support unit 11, and a plasma generating unit 12. The chamber 10 includes a plasma processing space. The chamber 10 includes at least at least one gas supply port for supplying another processing gas to the plasma processing space; and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 described later, and the gas exhaust port is connected to an exhaust system described later. 40. The substrate support 11 is disposed in the plasma processing space and supports a substrate. The substrate support surface is adapted to support the substrate.

[0010] The plasma generating unit 12 generates a plasma from at least one processing gas supplied into the plasma processing space. The plasma is generated from the plasma processing space. is a type of plasma that is capacitively coupled. ma), Inductively Coupled Plasma (ICP; Inductively Coupled Plasma sma), ECR (Electron Cyclotron Resonance) plug Zuma, helicon wave plasma (HWP; Helicon Wave Plasma), or a surface wave plasma (SWP; Surface Wave Plasma), etc., may be used. Further, various types of plasma generation units including an AC (Alternating Current) plasma generation unit and a D C (Direct Current) plasma generation unit may be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency within the range of 100 kHz to 10 GHz. Therefore, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency within the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to execute various processes described in the present disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 so as to execute the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 is realized by, for example, a computer 2a. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The functions realized by the processing unit 2a1 described in the present disclosure are a general-purpose processor, a specific-purpose processor, an integrated circuit, programmed to realize the described functions, ASICs (Application Specific Integrated C ircuits), a CPU (Central Processing Unit), a conventional ircuits), etc. ​​​​​​Conventional circuitry and / or combinations thereof may be implemented in circuitry or processing circuitry that includes this. The processor may be regarded as circuitry or processing circuitry that includes transistors and other circuitry. The processor may be a programmed processor that executes a program stored in the storage unit 2a2. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 and executed. The medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network). In the present disclosure, the circuitry, unit, and means are hardware programmed to When it is a processor to be used, the circuit, means, or unit is a combination of hardware and software used to configure the hardware and / or the processor.

[0012] Hereinafter, a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1 will be described. FIG. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0013] The capacitively coupled plasma processing apparatus 1 includes a chamber 10, a gas supply unit 20, a power supply system 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is disposed in the chamber 10. The shower head 13 is disposed above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a part of the ceiling of the chamber 10. The chamber 10 has a plasma processing space 10s defined by the shower head 13, the side wall 10a of the chamber 10, and the substrate support unit 11. The chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the housing of the chamber 10.

[0014] The substrate support unit 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The annular region of the main body 111 ​​​​​​​​​​​​​111b surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111 . Accordingly, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a support base 1110 and an electrostatic chuck 1111 . The support base 1110 includes a conductive member. The conductive member of the support base 1110 can function as a lower electrode . The electrostatic chuck 1111 is disposed on the support base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic chuck electrode 1111b disposed within the ceramic member 1111a . Note that the electrostatic chuck electrode 1111b is also referred to as a clamping electrode . In one embodiment, the electrostatic chuck electrode 1111b is electrically connected or coupled to a chuck power supply. The chuck power supply may be a DC power supply or an AC power supply. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111 b. Note that other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b . In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Also, the RF power supply 31 and / or the power supply described later At least one bias electrode electrically connected or coupled to the source 32 may be disposed within the ceramic member 1 111a. In this case, at least one bias electrode functions as a lower electrode Further, the conductive member of the support base 1110 and the bias electrode within the ceramic member 1111a may function as a plurality of lower electrodes. In one embodiment, a first voltage generation unit 32a that functions as a voltage pulse generation unit described later is electrically connected or coupled to the bias electrode within the ceramic member 1111a, and a first RF generation unit 31a described later is electrically connected or coupled to the conductive member of the support base 1110. Also, the electrostatic chuck electrode 1111 b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode including

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material formed

[0017] Further, the substrate support portion 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof A heat transfer fluid such as brine or gas flows through the flow path 1110a In one embodiment, the flow path 1110a is formed within the support base 1110, and one or more heaters are disposed within the ceramic member 1111a of the electrostatic chuck 1111. Also, the substrate support ​​​​​​The portion 11 may include a heat transfer gas supply portion configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a.

[0018] The gas supply portion 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply portion 20 is configured to supply at least one process gas from a corresponding gas source 21 to the shower head 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Further, the gas supply portion 20 may include at least one flow modulation device configured to modulate or pulse the flow rate of at least one process gas.

[0019] The power supply system 30 includes an RF power supply 31 electrically connected or coupled to the chamber 10. In one embodiment, the RF power supply 31 is electrically connected or coupled to the chamber 10 via at least one impedance matcher. The impedance matcher may be a mechanically controlled matcher or an electronically controlled matcher. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. Thereby, plasma is generated from at least one process gas supplied to the plasma processing space 10s. Accordingly, the RF power supply 31 may function as at least a part of the plasma generation unit 12. Also, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, and the ion component in the formed plasma can be drawn into the substrate W.

[0020] ​​​​​​ The RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode, and is configured to generate a source RF signal (source RF power) for generating plasma in the plasma processing space 10s. In one embodiment, the first RF generation unit 31a is electrically connected or coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matcher. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode. The second RF generation unit 31b is electrically connected or coupled to at least one lower electrode and is configured to generate a bias RF signal (bias RF power). In one embodiment, the second RF generation unit 31b is electrically connected or coupled to at least one lower electrode via at least one impedance matcher. When the first RF generation unit 31a is electrically connected or coupled to a lower electrode, the second RF generation unit 31b may be electrically connected or coupled to the same lower electrode or to another lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode. The second RF generation unit 31b is electrically connected or coupled to at least one lower electrode and is configured to generate a bias RF signal (bias RF power). In one embodiment, the second RF generation unit 31b is electrically connected or coupled to at least one lower electrode via at least one impedance matcher. When the first RF generation unit 31a is electrically connected or coupled to a lower electrode, the second RF generation unit 31b may be electrically connected or coupled to the same lower electrode or to another lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0021] The second RF generation unit 31b is electrically connected or coupled to at least one lower electrode and is configured to generate a bias RF signal (bias RF power). In one embodiment, the second RF generation unit 31b is electrically connected or coupled to at least one lower electrode via at least one impedance matcher. When the first RF generation unit 31a is electrically connected or coupled to a lower electrode, the second RF generation unit 31b may be electrically connected or coupled to the same lower electrode or to another lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the second RF generation unit 31b is electrically connected or coupled to at least one lower electrode via at least one impedance matcher. When the first RF generation unit 31a is electrically connected or coupled to a lower electrode, the second RF generation unit 31b may be electrically connected or coupled to the same lower electrode or to another lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. When the first RF generation unit 31a is electrically connected or coupled to a lower electrode, the second RF generation unit 31b may be electrically connected or coupled to the same lower electrode or to another lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. When the first RF generation unit 31a is electrically connected or coupled to a lower electrode, the second RF generation unit 31b may be electrically connected or coupled to the same lower electrode or to another lower electrode. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. It has. In one embodiment, the bias RF signal is in the range of 100 kHz to 60 MHz and has a frequency within. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed .

[0022] Also, the power supply system 30 may include a power supply 32 that is electrically connected or coupled to the chamber 10 . The power supply 32 includes a first voltage generation unit 32a and a second voltage generation unit 32b . In one embodiment, the first voltage generation unit 32a is electrically connected or coupled to at least one lower electrode and is configured to generate a first voltage signal. The generated first voltage signal is applied to at least one lower electrode. In one embodiment, the second voltage generation unit 32b is electrically connected or coupled to at least one upper electrode and is configured to generate a second voltage signal. The generated second voltage signal is applied to at least one upper electrode .

[0023] In various embodiments, the first and / or second voltage signals may be pulsed. In this case, the first voltage generation unit 32a and / or the second voltage generation unit 32b function as a voltage pulse generation unit configured to generate a sequence of voltage pulses. Accordingly, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. In one embodiment, the sequence of voltage pulses has a plurality of cycles, and each cycle has ​​​​​The cycle includes a burst of voltage pulses in a first period and a constant reference voltage in a second period. That is, in the sequence of voltage pulses, a burst of voltage pulses is repeated. The absolute value of the voltage level of the voltage pulse is greater than the absolute value of the voltage level of the reference voltage. The voltage pulse may be an arbitrary waveform having a rectangular shape, a trapezoidal shape, a triangular shape, or a combination thereof, and the arbitrary waveform may change over time. The voltage pulse may have a positive polarity or a negative polarity. Also, the sequence of voltage pulses may include one or more positive-polarity voltage pulses and one or more negative-polarity voltage pulses within one cycle. Note that the first and second voltage generation units 32a and 32b may be provided in addition to the RF power supply 31, or the first voltage generation unit 32a may be provided in place of the second RF generation unit 31b.

[0024] The exhaust system 40 can be connected to, for example, the gas discharge port 10e provided at the bottom of the chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve adjusts the pressure within the plasma processing space 10s. The vacuum pump may include a turbo molecular pump, a dry pump, or a combination thereof.

[0025] <Configuration Example of Heat Transfer Member> FIG. 3 is a diagram for explaining an example of a heat transfer member. The heat transfer member H includes an adhesive silicon-containing sheet S1. The silicon-containing sheet S1 may be, for example, substantially disk-shaped. A carbon-containing film C1 is coated on the upper surface S1a of the silicon-containing sheet S1.

[0026] The silicon-containing sheet S1 is composed of an adhesive material. The silicon-containing sheet S1 may be composed of, for example, a silicon-containing material, a silicon carbide-containing material, or a nano-silicon carbide-containing material. The silicon-containing sheet S1 may contain a tungsten-containing material, an aluminum oxide -containing material, an aluminum nitride-containing material, a diamond powder-containing material, a carbon nano tube-containing material, fluororubber, or an acrylic resin, etc. In one embodiment the silicon-containing sheet S1 may be a mesh sheet impregnated with a liquid heat transfer material such as silicone oil. In one embodiment, the silicon-containing sheet S1 may be composed of a material having high thermal conductivity and plasma resistance.

[0027] In one embodiment, the silicon-containing sheet S1 has a thickness of 1000 μm or less, 800 μm or less or 500 μm or less.

[0028] The carbon-containing film C1 is a film containing carbon as a component. The carbon-containing film C1 may contain a carbon component having a carbon-carbon bond with a smaller bond energy than a siloxane bond. Further, the carbon-containing film C1 may also contain a carbon component composed of a layered structure such as graphite or weak intermolecular forces such as amorphous carbon. The carbon-containing film C1 may be, for example, a film containing graphite, amorphous carbon, or a mixture thereof. The carbon-containing film C1 may be coated on the upper surface of the silicon-containing sheet S1a by, for example, physical vapor deposition (PVD) or chemical vapor deposition (CVD), etc. In one embodiment, the carbon-containing film C1 has a thickness of 10 nm or more, 30 nm or more, or 50 nm or more. In one embodiment, the carbon-containing film C1 has a thickness of 200 nm or less, or 1 00 nm or less.

[0029] In one embodiment, the carbon-containing film C1 has a thickness of 10 nm or more, 30 nm or more, or 50 nm or more. In one embodiment, the carbon-containing film C1 has a thickness of 200 nm or less, or 1 00 nm or less.

[0030] FIG. 4 is a diagram showing another configuration example of the heat transfer member H. As shown in FIG. 4, the heat transfer member H has The silicon-containing sheet S1 may be coated on both sides with a carbon-containing film. The upper surface S1a of the carbon-containing sheet S1 is coated with a first carbon-containing film C1. The lower surface S1b of the silicon-containing sheet S1 is coated with a second carbon-containing film C2. The configurations (structure, material, thickness, etc.) of the first carbon-containing film C1 and the second carbon-containing film C2 are as follows: The first carbon-containing film C1 and the second carbon-containing film C2 may have the same configuration as the carbon-containing film C1 shown in FIG. The carbon-containing films C2 may have the same configuration as each other or may be different from each other.

[0031] FIG. 5 is a diagram showing another configuration example of the heat transfer member H. As shown in FIG. 5, the heat transfer member H has The silicon-containing sheet S1 may be coated with a carbon-containing film on both sides and on the side. The upper surface S1a of the silicon-containing sheet S1 is coated with a first carbon-containing film C1. The lower surface S1b of the silicon-containing sheet S1 is coated with a second carbon-containing film C2. The silicon-containing sheet S1 has a third carbon-containing film C3 on one side surface S1c. The other side S1d of the silicon-containing sheet S1 is coated with a fourth carbon. The third carbon-containing film C3 and the fourth carbon-containing film C4 are coated on the substrate. The configuration (structure, material, thickness, etc.) of the carbon-containing film C4 may be similar to the configuration of the carbon-containing film C1 shown in FIG. The first carbon-containing film C1, the second carbon-containing film C2, the third carbon-containing film C3 and the fourth carbon-containing film C4 are The structures of the element-containing films C4 may be the same as or different from each other.

[0032] <Application examples of heat transfer materials> In one embodiment, the heat transfer member H may be used in a substrate processing apparatus. For example, The silicon-containing sheet S1 may be disposed on the substrate support portion of the substrate processing apparatus. In this case, The upper surface S1a of the silicon-containing sheet S1 may constitute a support surface for supporting the substrate. Also, The silicon-containing sheet S1 may function as a heat transfer member for heat exchange between the substrate support portion and the substrate. Also, for example, the silicon-containing sheet S1 may be a consumable part used in the substrate processing apparatus such as a ring assembly or a shower head, etc., and may be disposed between the consumable part and the support member of the consumable part. In this case, the upper surface S1a of the silicon-containing sheet S1 may constitute a support surface for supporting the consumable part. Also, the silicon-containing sheet S1 may function as a heat transfer member for heat exchange between the consumable part and the support member of the consumable part. (e.g., ring assembly or shower head, etc.) and the support member of the consumable part. In this case, the upper surface S1a of the silicon-containing sheet S1 may constitute a support surface for supporting the consumable part. Also, the silicon-containing sheet S1 may function as a heat transfer member for heat exchange between the consumable part and the support member of the consumable part. In this case, the upper surface S1a of the silicon-containing sheet S1 may constitute a support surface for supporting the consumable part. Also, the silicon-containing sheet S1 may function as a heat transfer member for heat exchange between the consumable part and the support member of the consumable part.

[0033] FIG. 6 is a diagram for explaining an application example of the heat transfer member H. FIG. 6 shows an example in which the heat transfer member H is disposed on the substrate support portion 11 of the plasma processing apparatus 1 (see FIG. 2). The heat transfer member H may be provided on the substrate support surface 111a of the substrate support portion 11. And a substrate W may be provided on the heat transfer member H. That is, the heat transfer member H may be provided between the substrate support portion 11 and the substrate W. The shape of the heat transfer member H in plan view may be circular, similar to the substrate W. may be provided on the substrate support surface 111a of the substrate support portion 11. And a substrate W may be provided on the heat transfer member H. That is, the heat transfer member H may be provided between the substrate support portion 11 and the substrate W. The shape of the heat transfer member H in plan view may be circular, similar to the substrate W.

[0034] As shown in FIG. 6, the lower surface S1b of the silicon-containing sheet S1 abuts on the upper surface of the substrate support surface 111a of the substrate support portion 11. The silicon-containing sheet S1 having adhesiveness adheres closely to the substrate support portion 11, whereby heat exchange between the two can be promoted. The carbon-containing film C1 formed on the upper surface S1a of the silicon-containing sheet S1 abuts on the lower surface of the substrate W. The substrate W is the heat transfer member 11, whereby heat exchange between the two can be promoted. The carbon-containing film C1 formed on the upper surface S1a of the silicon-containing sheet S1 abuts on the lower surface of the substrate W. The substrate W is the heat transfer member 11, whereby heat exchange between the two can be promoted. The carbon-containing film C1 formed on the upper surface S1a of the silicon-containing sheet S1 abuts on the lower surface of the substrate W. The substrate W is the heat transfer member ​​​​It is thermally connected to the substrate support portion 11 via H.

[0035] During the plasma treatment of the substrate W, due to the heat input from the plasma in the chamber 10, the temperature of the heat transfer member H can rise through the substrate W. At this time, if the carbon-containing film C1 does not exist at the interface between the substrate W and the silicon-containing sheet S1, siloxane bonds may occur at the interface between the substrate W and the silicon-containing sheet S1, and the two may be firmly bonded. In such a case, when transporting the substrate W after the plasma treatment, a large force is required to separate the substrate W from the heat transfer member H. Also, the substrate W or the heat transfer member H may be damaged during separation. In contrast, in the present embodiment, a carbon-containing film C1 exists at the interface between the silicon-containing sheet S1 and the substrate W. Thereby, the occurrence of siloxane bonds between the substrate W and the silicon-containing sheet S1 can be suppressed. And, the bonding force between the substrate W and the carbon-containing film C1, and the bonding force of the carbon-carbon bonds in the carbon-containing film C1 tend to be smaller than the siloxane bond. Therefore, the substrate W can be separated from the heat transfer member H with a relatively small force. In one embodiment, the separation of the substrate W from the heat transfer member H includes a part (for example, the upper part) of the carbon-containing film C1 bonded to the substrate W peeling off from another part (for example, the lower part) of the carbon-containing film C1 bonded to the heat transfer member H. In the present embodiment, a carbon-containing film C1 exists at the interface between the silicon-containing sheet S1 and the substrate W. Thereby, the occurrence of siloxane bonds between the substrate W and the silicon-containing sheet S1 can be suppressed. And, the bonding force between the substrate W and the carbon-containing film C1, and the bonding force of the carbon-carbon bonds in the carbon-containing film C1 tend to be smaller than the siloxane bond. Therefore, the substrate W can be separated from the heat transfer member H with a relatively small force. In one embodiment, the separation of the substrate W from the heat transfer member H includes a part (for example, the upper part) of the carbon-containing film C1 bonded to the substrate W peeling off from another part (for example, the lower part) of the carbon-containing film C1 bonded to the heat transfer member H. W can be separated from the heat transfer member H with a relatively small force. In one embodiment, the separation of the substrate W from the heat transfer member H includes a part (for example, the upper part) of the carbon-containing film C1 bonded to the substrate W peeling off from another part (for example, the lower part) of the carbon-containing film C1 bonded to the heat transfer member H. includes a part (for example, the upper part) of the carbon-containing film C1 bonded to the substrate W peeling off from another part (for example, the lower part) of the carbon-containing film C1 bonded to the heat transfer member H.

[0036] FIGS. 7A and 7B are diagrams for explaining another application example of the heat transfer member H. FIGS. 7A and FIG. 7B show an example in which the heat transfer member H is disposed between the ring support surface 111b of the plasma processing apparatus 1 (see FIG. 2) and the ring 112. In one embodiment, as shown in FIG. 7A, the heat transfer member H and the ring 112 may be in contact via the carbon-containing film C1. In this case, the ring the heat transfer member H and the ring 112 may be in contact via the carbon-containing film C1. In this case, the ring 112 and the heat transfer member H can be separated by a relatively small force. The ring 112 separated from the heat transfer member H may be conveyed outside the chamber 10 alone by a conveying device. The replacement ring 112 may be stored alone outside the chamber 10. The replacement ring 112 may be conveyed into the chamber 10 alone by a conveying device and arranged on the heat transfer member H. In one embodiment, as shown in FIG. 7B, the heat transfer member H and the ring support surface 111b may be in contact via the carbon-containing film C1. In this case, the heat transfer member H and the ring support surface 111b can be separated by a relatively small force. That is, in the example shown in FIG. 7B, the heat transfer member H and the ring 112 can be separated from the ring support surface 111b integrally. The heat transfer member H and the ring 112 separated from the ring support surface 111b may be conveyed outside the chamber 10 integrally by a conveying device. The replacement heat transfer member H and the ring 112 may be stored integrally outside the chamber 10. The replacement heat transfer member H and the ring 112 may be conveyed into the chamber 10 integrally by a conveying device and arranged on the ring support surface 111b. The shape of the heat transfer member H in plan view may be an annular shape similar to that of the ring 112. The heat transfer member H may be arranged so that the center thereof coincides with the electrostatic chuck 1111 in plan view. The ring 112 is an example of a consumable part in the present disclosure. The ring 112 may be, for example, one or a plurality of edge rings. The edge ring is formed of a conductive material or an insulating material. The ring 112 may be, for example, one or a plurality of cover rings. The cover ring is arranged on the outer side in the radial direction of the edge ring. The cover ring is formed of an insulating material. The ring 112 may be configured to include both an edge ring and a cover ring, for example. The ring 112 separated from the heat transfer member H may be conveyed outside the chamber 10 alone by a conveying device. The replacement ring 112 may be stored alone outside the chamber 10. The replacement ring 112 may be stored alone outside the chamber 10. The replacement ring 112 may be conveyed into the chamber 10 alone by a conveying device and arranged on the heat transfer member H. In one embodiment, as shown in FIG. 7B, the heat transfer member H and the ring support surface 111b may be in contact via the carbon-containing film C1. In this case, the heat transfer member H and the ring support surface 111b can be separated by a relatively small force. That is, in the example shown in FIG. 7B, the heat transfer member H and the ring 112 can be separated from the ring support surface 111b integrally. The heat transfer member H and the ring 112 separated from the ring support surface 111b may be conveyed outside the chamber 10 integrally by a conveying device. The heat transfer member H and the ring 112 separated from the ring support surface 111b may be conveyed outside the chamber 10 integrally by a conveying device. The replacement heat transfer member H and the ring 112 may be stored integrally outside the chamber 10. The replacement heat transfer member H and the ring 112 may be stored integrally outside the chamber 10. The replacement heat transfer member H and the ring 112 may be conveyed into the chamber 10 integrally by a conveying device and arranged on the ring support surface 111b. The replacement heat transfer member H and the ring 112 may be conveyed into the chamber 10 integrally by a conveying device and arranged on the ring support surface 111b. The shape of the heat transfer member H in plan view may be an annular shape similar to that of the ring 112. The heat transfer member H may be arranged so that the center thereof coincides with the electrostatic chuck 1111 in plan view. The ring 112 is an example of a consumable part in the present disclosure. The ring 112 may be, for example, one or a plurality of edge rings. The edge ring is formed of a conductive material or an insulating material. The ring 112 may be, for example, one or a plurality of cover rings. The cover ring is arranged on the outer side in the radial direction of the edge ring. The cover ring is formed of an insulating material. The ring 112 may be configured to include both an edge ring and a cover ring, for example. is acceptable. In one embodiment, as shown in FIGS. 7A and 7B, the electrostatic chuck 1111 may include an electrostatic chuck electrode 1111c. The electrostatic chuck electrode 1111c is disposed below the ring support surface 111b and within the ceramic member 1111a. The electrode 1111c is configured to adsorb and hold the ring 112. The electrostatic chuck electrode 1111c may be electrically connected or coupled to a chuck power supply. In one embodiment, the electrostatic chuck electrode 1111c may be configured integrally with the substrate W electrostatic chuck electrode 1111b. In one embodiment, the electrostatic chuck 1111 may not include the electrostatic chuck electrode 1111c.

[0037] FIG. 8 is a diagram for explaining another application example of the heat transfer member H. FIG. 8 shows an example where the heat transfer member is disposed between the cooling plate 61 and the shower plate 60 of the plasma processing apparatus 1 (see FIG. 2). As shown in FIG. 8, a flow path 70 is formed in the cooling plate 61. The heat transfer fluid is supplied through the pipe 71 to the flow path 70 and discharged through the pipe 71. The shower plate 60 and the cooling plate 61 may be attached to the chamber 10 via the member 51. The heat transfer member H may have a plurality of holes having the same diameter as the gas inlet 13c.

[0038] <An example of a substrate processing method> Next, a substrate processing method (hereinafter also referred to as "method MT1") according to an exemplary embodiment of the present disclosure will be described. The processing in each step may be executed by the plasma processing apparatus shown in FIGS. 1 and 2. Hereinafter, a case where the control unit 2 controls each part of the capacitively coupled plasma processing apparatus 1 (see FIG. 2) to execute the method MT1​​

[0039] FIG. 9 is a flowchart showing an example of the method MT1. FIG. 10 is a schematic diagram for explaining each process of the method MT1. As shown in FIG. 9, the method MT1 includes a step ST1 of providing a silicon-containing sheet, a step ST2 of forming a carbon-containing film, and a step ST3 of providing a substrate. In one embodiment, the method MT1 may further include a step ST4 of performing plasma treatment and a step ST5 of carrying out the substrate. Hereinafter, the method MT1 will be described in detail with reference to FIGS. 9 and 10. In step ST1, a silicon-containing sheet S1 is provided. The silicon-containing sheet S1 is provided on the substrate support surface 111a in the chamber 10 using a transfer device or manually (see (a) to (b) of FIG. 10). The adhesive silicon-containing sheet adheres closely to the substrate support surface 111a. In step ST2, a carbon-containing film C1 is formed on the upper surface of the silicon-containing sheet S1. Specifically, for example, a carbon-containing gas is supplied to the plasma treatment space 10s. A source RF signal is supplied from the RF power supply 31 to the upper electrode or the lower electrode. At this time, a bias signal may be supplied to the lower electrode. Plasma is generated from the carbon-containing gas, and carbon in the plasma is deposited on the surface of the silicon-containing sheet S1, and a carbon-containing film C1 is formed on the upper surface (see (c) of FIG. 10). Thereby, a heat transfer member H is formed on the substrate support portion 11. In step ST3, a substrate W is provided in the chamber 10. The substrate W is carried into the chamber 10 by a transfer arm and placed on the upper surface of the heat transfer member H (see (d) to (e) of FIG. 10).

[0040] In step ST1, a silicon-containing sheet S1 is provided. The silicon-containing sheet S1 is provided on the substrate support surface 111a in the chamber 10 using a transfer device or manually (see (a) to (b) of FIG. 10). The adhesive silicon-containing sheet adheres closely to the substrate support surface 111a.

[0041] In step ST2, a carbon-containing film C1 is formed on the upper surface of the silicon-containing sheet S1. Specifically, for example, a carbon-containing gas is supplied to the plasma treatment space 10s. A source RF signal is supplied from the RF power supply 31 to the upper electrode or the lower electrode. At this time, a bias signal may be supplied to the lower electrode. Plasma is generated from the carbon-containing gas, and carbon in the plasma is deposited on the surface of the silicon-containing sheet S1, and a carbon-containing film C1 is formed on the upper surface (see (c) of FIG. 10). Thereby, a heat transfer member H is formed on the substrate support portion 11.

[0042] In step ST3, a substrate W is provided in the chamber 10. The substrate W is carried into the chamber 10 by a transfer arm and placed on the upper surface of the heat transfer member H (see (d) to (e) of FIG. 10). (see reference). At this time, the carbon-containing film C1 formed on the upper surface S1a of the silicon-containing sheet S1 abuts against the lower surface of the substrate W. The substrate W is thermally connected to the substrate support portion 11 via the heat transfer member H .

[0043] In step ST4, plasma treatment is performed. The plasma treatment includes, for example, etching processing. The processing gas is supplied by the gas supply unit 20 to the plasma processing space 10s through the shower head 13. The processing gas supplied at this time includes a gas that generates active species necessary for, for example, etching processing of the substrate W. The source RF signal is supplied from the RF power supply 31 to the upper electrode or the lower electrode. At this time, a bias signal may be supplied to the lower electrode . Plasma is generated from the processing gas, and plasma treatment (for example, etching treatment) is performed on the substrate W . In step ST4, there is heat input from the plasma to the substrate W, and the temperature of the heat transfer member H may rise through the substrate W. At the interface between the silicon-containing sheet S1 and the substrate W, there is a carbon-containing film C1. Thereby, the formation of siloxane bonds between the substrate W and the silicon-containing sheet S1 can be suppressed, and the strong bonding of both can be suppressed. C1 exists.

[0044] In step ST5, the substrate W is carried out. By lifting the substrate W, the substrate W and the heat transfer member H are separated (see (f) of FIG. 10). As described above, due to the peeling or the like of the carbon-containing film C1 present at the interface between the silicon-containing sheet S1 and the substrate W, the separation can be easily performed . The substrate W is transported outside the chamber 10 by the transport arm (see (g) of FIG. 10 ). Thereby, the method MT1 ends.

[0045] In one embodiment, in step ST1, providing the silicon-containing sheet S1 Instead, a heat transfer member H (a silicon-containing sheet S1 coated with a carbon-containing film C1) may be provided. In this case, step ST2 may be omitted.

[0046] In one embodiment, after the completion of step ST5, the heat transfer member H may be carried out of the chamber 10 In this case, for a new substrate W, the method MT1 may be executed from step ST1 . In one embodiment, after the completion of the method MT1, the heat transfer member H may not be carried out of the chamber 10 . Then, for another substrate W, the method MT1 may be executed from step ST3 (providing the substrate) or from step ST2 (forming the carbon-containing film). That is, the heat transfer member H may be continuously used for plasma treatment of one or more other substrates W .

[0047] In one embodiment, the plasma treatment in step ST4 may be executed in a state where a carbon-containing film exists between the silicon-containing sheet S1 and the substrate support surface 111a. Heat input from the plasma through the substrate W may cause the silicon-containing sheet S1 to be modified and its adhesiveness to increase, and it can be suppressed that the interface between the silicon-containing sheet S1 and the substrate support surface 111a is firmly bonded. As for the method of providing a carbon-containing film between the silicon-containing sheet S1 and the substrate support surface 111a, for example, the following methods may be used. For example, before step ST1, a carbon-containing film may be formed on the substrate support portion 11. Also, for example, in step ST1, a silicon-containing sheet S1 coated with a carbon-containing film on its lower surface may be provided on the substrate support surface 111a. In addition, as a method of providing a carbon-containing film between the silicon-containing sheet S1 and the substrate support surface 111a, for example, the following methods may be used. For example, before step ST1, a carbon-containing film may be formed on the substrate support portion 11. Also, for example, in step ST1, a silicon-containing sheet S1 coated with a carbon-containing film on its lower surface may be provided on the substrate support surface 111a.

[0048] <Other examples of heat transfer members> FIG. 11 is a diagram showing another configuration example of the heat transfer member. As shown in FIG. 11, the heat transfer member H1 may include a base T, a first silicon-containing sheet S1, and a second silicon-containing sheet S2 and a third silicon-containing sheet S3. The first silicon-containing sheet S1 and the second silicon-containing sheet S2 are each an example of the "silicon-containing sheet" and the "other silicon-containing sheet" in the present disclosure.

[0049] The base T has a substantially circular shape. The base T may have a concave cross-sectional shape. The base T may include a disc portion T1 with a small thickness at the center and an annular portion T2 with a large thickness at the outer periphery. The diameter r1 of the disc portion T 1 is formed slightly larger than the diameter r3 of the substrate W and can accommodate the silicon-containing sheet S1 and the substrate W inside. The base T may be made of, for example, Si, SiC, SiN, C, S iO2, quartz, Al2O3, Y2O3, YAlO3 (YAP), YOF, W, Ti, TiN , ZeO2, green sheet and other materials. The base T may be made of a conductive material or may also be made of an insulating material. The disc portion T1 and the annular portion T2 may be made of the same material or may also be made of different materials.

[0050] The material and thickness of the first silicon-containing sheet S1 may be the same as those of the silicon-containing sheet S 1 shown in FIG. 3. A first carbon-containing film C 1 is coated on the upper surface of the first silicon-containing sheet S1. The configuration (structure, material, thickness, etc.) of the first carbon-containing film C1 may be the same as the configuration of the carbon-containing film C1 shown in FIG. 3. The substrate W is disposed on the upper surface (the first carbon-containing film C1) of the first silicon-containing sheet S1 . That is, the first silicon The upper surface of the silicon-containing sheet S1 constitutes a substrate support surface for disposing the substrate W. The first silicon The lower surface of the silicon-containing sheet S1 abuts against the upper surface of the disk portion T1 of the base T. The first silicon-containing sheet S1 has adhesiveness and is adhered and bonded to the base T.

[0051] The material and thickness of the second silicon-containing sheet S2 may be the same as those of the silicon-containing sheet S 1 shown in FIG. 3. The diameter of the second silicon-containing sheet S2 may be larger than the diameter of the first silicon-containing sheet S1. The material and thickness of the second silicon-containing sheet S2 may be the same as or different from those of the silicon-containing sheet S1. The lower surface of the second silicon-containing sheet S2 is coated with a second carbon-containing film C2. The structure (structure, material, thickness, etc.) of the second carbon-containing film C2 may be the same as or different from the structure of the carbon-containing film C1 shown in FIG. 3. The upper surface of the second silicon-containing sheet S2 abuts against the lower surface of the base T. The second silicon-containing sheet S2 has adhesiveness and is adhered and bonded to the base T.

[0052] A third silicon sheet may be disposed in the annular portion T2 of the base T. The shape of the third silicon-containing sheet S3 in plan view may be annular, similar to the ring 112. The material and thickness of the third silicon-containing sheet S3 may be the same as those of the silicon-containing sheet S1 shown in FIG. 3. The upper surface S3a of the third silicon-containing sheet S3 is coated with a fifth carbon-containing film C5. The structure (structure, material, thickness, etc.) of the fifth carbon-containing film C5 may be the same as or different from the structure of the carbon-containing film C1 shown in FIG. 3. The fifth carbon-containing film C5 formed on the upper surface S3a of the third silicon-containing sheet S3 is that of the ring 112 ​ It can abut on the lower surface. The lower surface of the third silicon-containing sheet S3 abuts on the upper surface of the base T. The third silicon-containing sheet S3 has adhesiveness and is adhered and bonded to the base T.

[0053] As shown in FIG. 11, the heat transfer member H1 can be transported in a state where the substrate W and the ring 112 are accommodated and placed. And the heat transfer member H1 may be disposed, for example, on the substrate support portion 11 of the plasma processing apparatus 1 (see FIG. 2). The first carbon-containing film C1 can suppress the substrate W and the first silicon-containing sheet S1 from being firmly bonded to each other during the plasma processing inside the chamber 10, and facilitate the separation of the two. The second carbon-containing film C2 can suppress the substrate support portion 11 and the second silicon-containing sheet S2 from being firmly bonded to each other during the plasma processing inside the chamber 10, and facilitate the separation of the two. The fifth carbon-containing film C5 can suppress the ring 112 and the third silicon-containing sheet S3 from being firmly bonded to each other during the plasma processing inside the chamber 10, and facilitate the separation of the two.

[0054] Next, a substrate processing method (hereinafter also referred to as "method MT2") using the heat transfer member H1 shown in FIG. 11 will be described. FIG. 12 is a flowchart showing an example of the method MT2. FIG. 13 is a schematic diagram for explaining each step of the method MT2. As shown in FIG. 12, the method MT2 includes a step STa1 of providing a heat transfer member, and a step STa2 of providing a substrate and a ring. In one embodiment, the method MT2 may further include a step STa3 of performing plasma processing, a step STa4 of carrying out the substrate, and a step STa5 of carrying out the heat transfer member. Each step ​​​​​​​​​​​​​​The processes in [this context] may be executed by the plasma processing apparatus shown in FIGS. 1 and 2. Hereinafter, control section 2 controls each part of the capacitively coupled plasma processing apparatus 1 (see FIG. 2) and executes method MT2 as an example will be described.

[0055] In step STa1, a heat transfer member H1 is provided. The heat transfer member H1 is provided on the substrate support surface 111a in the chamber 10 using a transfer device or manually (see FIGS. 13(a) to (c)).

[0056] In step STa2, the substrate W and the ring 112 are provided in the chamber 10. The substrate W and the ring 112 are each carried into the chamber 10 by a transfer arm and placed on the upper surface of the heat transfer member H1 (see FIGS. 13(d) to (e)). At this time, the carbon-containing film C1 formed on the upper surface of the silicon-containing sheet S1 abuts against the lower surface of the substrate W. The substrate W is thermally connected to the substrate support portion 11 via the heat transfer member H1. The carbon-containing film C5 formed on the upper surface of the silicon-containing sheet S3 abuts against the lower surface of the ring 112. The ring 112 is thermally connected to the substrate support portion 11 via the heat transfer member H1.

[0057] In step STa3, plasma processing is executed (see FIG. 13(e)). The plasma processing may be the same as that executed by method MT1.

[0058] In step STa4, the substrate W is unloaded. By lifting the substrate W, the substrate W and the heat transfer member H1 are separated (see FIG. 13(f)). As described above, the separation is facilitated by the peeling or the like of the carbon-containing film C1 present at the interface between the silicon-containing sheet S1 and the substrate W. It can be performed. The substrate W is transported outside the chamber 10 by a transfer arm.

[0059] In step STa5, the heat transfer member H1 and the ring 112 are carried out. By lifting the heat transfer member H1, the heat transfer member H1 and the substrate support portion 11 are separated (see (g) of FIG. 13). The separation can be easily performed by the separation etc. of the carbon-containing film C2 existing at the interface between the silicon-containing sheet S2 and the substrate support portion 11. The heat transfer member H1 is transported outside the chamber 10 by a transfer arm (see (g) of FIG. 13). Thereby, the method MT2 ends. At the interface between the silicon-containing sheet S2 and the substrate support portion 11, the carbon-containing film C2 existing is peeled off etc. The heat transfer member H1 is transported outside the chamber 10 by a transfer arm (see (g) of FIG. 13). Thereby, the method MT2 ends. In one embodiment, the substrate W may be disposed on the upper surface of the heat transfer member H1 outside the chamber 10 in advance. That is, in step STa1, the heat transfer member H1 and the substrate W may be provided integrally in the chamber 10.

[0060] In one embodiment, the substrate W may be disposed on the upper surface of the heat transfer member H1 outside the chamber 10 in advance. That is, in step STa1, the heat transfer member H1 and the substrate W may be provided integrally in the chamber 10. In one embodiment, the ring 112 may be disposed on the upper surface of the heat transfer member H1 outside the chamber 10 in advance. That is, in step STa1, the heat transfer member H1 and the ring 112 may be provided integrally in the chamber 10. At this time, the substrate W may be further disposed on the upper surface of the heat transfer member H1. That is, in step STa1, the heat transfer member H1, the substrate W, and the ring 112 may be provided integrally in the chamber 10. In one embodiment, the substrate support surface 111a may be coated with a carbon-containing film in advance. In this case, the lower surface of the second silicon-containing sheet S2 does not have to be coated with a carbon-containing film. In step STa1, the carbon-containing film is coated.

[0061] In one embodiment, the ring 112 may be disposed on the upper surface of the heat transfer member H1 outside the chamber 10 in advance. That is, in step STa1, the heat transfer member H1 and the ring 112 may be provided integrally in the chamber 10. In one embodiment, the ring 112 may be disposed on the upper surface of the heat transfer member H1 outside the chamber 10 in advance. That is, in step STa1, the heat transfer member H1 and the ring 112 may be provided integrally in the chamber 10. At this time, the substrate W may be further disposed on the upper surface of the heat transfer member H1. That is, in step STa1, the heat transfer member H1, the substrate W, and the ring 112 may be provided integrally in the chamber 10. In one embodiment, the substrate support surface 111a may be coated with a carbon-containing film in advance. In this case, the lower surface of the second silicon-containing sheet S2 does not have to be coated with a carbon-containing film. In step STa1, the carbon-containing film is coated. In one embodiment, the substrate support surface 111a may be coated with a carbon-containing film in advance. In this case, the lower surface of the second silicon-containing sheet S2 does not have to be coated with a carbon-containing film. In step STa1, the carbon-containing film is coated. In one embodiment, the substrate support surface 111a may be coated with a carbon-containing film in advance. In this case, the lower surface of the second silicon-containing sheet S2 does not have to be coated with a carbon-containing film. In step STa1, the carbon-containing film is coated. In one embodiment, the substrate support surface 111a may be coated with a carbon-containing film in advance. In this case, the lower surface of the second silicon-containing sheet S2 does not have to be coated with a carbon-containing film. In step STa1, the carbon-containing film is coated.

[0062] In one embodiment, the substrate support surface 111a may be coated with a carbon-containing film in advance. In this case, the lower surface of the second silicon-containing sheet S2 does not have to be coated with a carbon-containing film. In step STa1, the carbon-containing film is coated. In one embodiment, the substrate support surface 111a may be coated with a carbon-containing film in advance. In this case, the lower surface of the second silicon-containing sheet S2 does not have to be coated with a carbon-containing film. In step STa1, the carbon-containing film is coated. In one embodiment, the substrate support surface 111a may be coated with a carbon-containing film in advance. In this case, the lower surface of the second silicon-containing sheet S2 does not have to be coated with a carbon-containing film. In step STa1, the carbon-containing film is coated. A heat transfer member may be provided on the resulting substrate support surface 111a such that the lower surface of the silicon-containing sheet S2 abuts thereon. As a method of coating the substrate support surface 111a with a carbon-containing film, it may be the same as the method performed in step ST2 of method MT1.

[0063] In one embodiment, in step STa1, a heat transfer member H1 on which the carbon-containing film C1 is not coated may be provided. Then, in the chamber 10, a carbon-containing film may be coated on the upper surface of the first silicon-containing sheet of the heat transfer member H1.

[0064] In one embodiment, in step STa4, in addition to the substrate W, the ring 112 may be carried out. In this case, by lifting the ring 112, the ring 112 and the heat transfer member H1 are separated. At this time, separation can be easily performed by peeling off the carbon-containing film C5 present at the interface between the silicon-containing sheet S3 and the ring 112.

[0065] In one embodiment, without performing step STa4, in step STa5, the heat transfer member H1, together with the substrate W and the ring 112, may be carried out together.

[0066] In one embodiment, after the end of step STa4, without performing step STa5, for another substrate W, method MT2 may be executed from step STa2 (provision of the substrate). That is, the ring 112 and the heat transfer member H1 may be continuously used for plasma treatment of one or more other substrates W.

[0067] <Test> Next, a test performed to evaluate the adhesiveness and heat transfer properties of the heat transfer member H will be described. The present disclosure is not limited in any way by the following tests.

[0068] (Tack force test) First, two types of silicon-containing sheets with different adhesiveness and different thermal resistance values were prepared (Sample 1, Sample 2). The tack force of each of these samples (Sample 1, Sample 2) was measured. Specifically, the sample (Sample 1 / Sample 2) was fixed on the upper part of an alumina table. A silicon chip (5 mm square) was adhered to the probe of the testing machine, and it was pressed against the approximate center of the sample for 10 seconds under the condition of 150 °C. The force required to pull away the probe pressed against the sample at a constant speed of 1 m / second was measured. Next, the tack force was measured in the same manner with each sample coated with a carbon-containing film. The sample (Sample 1 / Sample 2) was fixed to the table such that the surface coated with the carbon-containing film was in contact with the alumina table. A silicon chip (5 mm square)

[0069] was adhered to the probe of the testing machine, and it was pressed against the approximate center of the sample for 10 seconds under the condition of 150 °C. The force required to pull away the probe pressed against the sample at a constant speed of 1 mm / second was measured.

[0070] determined. Figure 14 is a diagram showing the results of the tack force test. As shown in Figure 14, when Sample 1 had a coating of a carbon-containing film, the tack force decreased by 85%. When Sample 2 had a coating of a carbon-containing film, the tack force decreased by 88%. When there was no coating of the carbon-containing film, the adhesiveness of the silicon-containing sheet increased due to heat at 150 °C, and it is considered that it adhered to the alumina table and the tack force became large. On the other hand, when there is a coating of the carbon-containing film, the carbon-containing film present at the interface between the alumina table and the sample causes silicon​​​​​​​​​ It is considered that the carbon-containing sheet is prevented from adhering to the alumina base. Also, due to the peeling of the carbon containing film, it is considered that the force required to pull it away from the alumina base becomes smaller.

[0071] (Thermal Resistance Test) Regarding the above-described Sample 1 and Sample 2, load: 12 kg·m / second 2 , temperature: 20 °C to 120 °C, the thermal resistance was measured. The thermal resistance was similarly measured with the carbon-containing film coated on each sample for 30 seconds. Also, the thermal resistance was similarly measured with the carbon-containing film coated on each sample for 60 seconds.

[0072] FIG. 15 is a diagram showing the results of the thermal resistance test. As shown in FIG. 15, in each sample, for those with the carbon-containing film coated for 30 seconds and those coated for 60 seconds, the thermal resistance hardly changed compared to those without the carbon-containing film coated. That is, coating the silicon-containing sheet with the carbon-containing film did not result in a decrease in thermal conductivity.

[0073] Embodiments of the present disclosure further include the following aspects.

[0074] (Appendix 1) A chamber, a substrate support portion disposed in the chamber, a heat transfer member disposed on the substrate support portion, the heat transfer member comprising an adhesive silicon containing sheet, and the upper surface of the silicon-containing sheet being coated with a carbon-containing film, the heat transfer member, a substrate processing apparatus comprising

[0075] (Appendix 2)​​​​ The substrate processing apparatus according to appended note 1, wherein the thickness of the carbon-containing film is 200 nm or less.

[0076] (Appended note 3) The heat transfer member is disposed on the substrate support portion such that the lower surface of the silicon-containing sheet abuts against the substrate support portion. The substrate processing apparatus according to appended note 1 or appended note 2. The substrate processing apparatus according to appended note 1 or appended note 2, wherein the heat transfer member is disposed on the substrate support portion such that the lower surface of the silicon-containing sheet abuts against the substrate support portion.

[0077] (Appended note 4) The substrate processing apparatus according to appended note 3, wherein the lower surface of the silicon-containing sheet is coated with a carbon-containing film. The substrate processing apparatus according to appended note 3, wherein the lower surface of the silicon-containing sheet is coated with a carbon-containing film.

[0078] (Appended note 5) The substrate processing apparatus according to appended note 4, wherein the thickness of the carbon-containing film on the lower surface of the silicon-containing sheet is 200 nm or less. The substrate processing apparatus according to appended note 4, wherein the thickness of the carbon-containing film on the lower surface of the silicon-containing sheet is 200 nm or less.

[0079] (Appended note 6) The heat transfer member Further includes a base disposed on the lower surface of the silicon-containing sheet, and Another silicon-containing sheet having adhesiveness disposed on the lower surface of the base. The heat transfer member is disposed on the substrate support portion such that the lower surface of the other silicon-containing sheet abuts against the substrate support portion. The substrate processing apparatus according to appended note 1 or appended note 2. The heat transfer member is disposed on the substrate support portion such that the lower surface of the other silicon-containing sheet abuts against the substrate support portion. The substrate processing apparatus according to appended note 1 or appended note 2. The substrate processing apparatus according to appended note 1 or appended note 2, wherein the heat transfer member is disposed on the substrate support portion such that the lower surface of the other silicon-containing sheet abuts against the substrate support portion.

[0080] (Appended note 7) The substrate processing apparatus according to appended note 6, wherein the lower surface of the other silicon-containing sheet is coated with a carbon-containing film. The substrate processing apparatus according to appended note 6, wherein the lower surface of the other silicon-containing sheet is coated with a carbon-containing film.

[0081] (Appended note 8) The thickness of the carbon-containing film on the lower surface of the other silicon-containing sheet is 200 nm or less. The substrate processing apparatus according to appended note 7. The substrate processing apparatus according to appended note 7, wherein the thickness of the carbon-containing film on the lower surface of the other silicon-containing sheet is 200 nm or less.

[0082] (Appended note 9) Further comprising an RF power supply, wherein the RF power supply is configured to supply a source RF signal for plasma generation to the substrate support part The substrate processing apparatus according to any one of Appendices 1 to 8, which is configured to supply an RF signal .

[0083] (Appendix 10) The substrate support part further comprises a temperature control module configured to adjust the temperature of the substrate support part . The substrate processing apparatus according to Appendix 9

[0084] (Appendix 11) A heat transfer member for a substrate processing apparatus, wherein the heat transfer member comprises an adhesive silicon-containing sheet and the upper surface of the silicon-containing sheet is coated with a carbon-containing film having a thickness of 200 nm or less .

[0085] (Appendix 12) The lower surface of the silicon-containing sheet is coated with a carbon-containing film having a thickness of 200 nm or less . The heat transfer member according to Appendix 11

[0086] (Appendix 13) A base disposed on the lower surface of the silicon-containing sheet, and another adhesive silicon-containing sheet disposed on the lower surface of the base. The heat transfer member according to Appendix 11 or Appendix 12 further comprises

[0087] (Appendix 14) The lower surface of the other silicon-containing sheet is coated with a carbon-containing film having a thickness of 200 nm or less . The heat transfer member according to Appendix 13

[0088] (Appendix 15) The upper surface of the silicon-containing sheet constitutes a support surface for supporting a substrate provided to the substrate processing apparatus or consumable parts in the substrate processing apparatus . The heat transfer member according to any one of Appendices 11 to 14 The above-mentioned heat transfer member.

[0089] (Appendix 16) A substrate processing method in a substrate processing apparatus, wherein the substrate processing apparatus includes a chamber and a substrate support portion disposed in the chamber, and the method includes: (a) providing a heat transfer member on the substrate support portion in the chamber, wherein the heat transfer member includes an adhesive silicon-containing sheet; (b) coating a carbon-containing film on the upper surface of the silicon-containing sheet; (c) providing a substrate on the heat transfer member. Substrate processing method

[0090] (Appendix 17) In the above (b), the thickness of the carbon-containing film to be coated is 200 nm or less. The substrate processing method according to Appendix 16.

[0091] (Appendix 18) Before the above (a), (d) further including a step of coating a carbon-containing film on the substrate support portion. The substrate processing method according to Appendix 16 or Appendix 17.

[0092] (Appendix 19) In the above (d), the thickness of the carbon-containing film to be coated is 200 nm or less. The substrate processing method according to Appendix 18.

[0093] The above embodiments are described for the purpose of illustration and are not intended to limit the scope of the present disclosure. The above embodiments can be variously modified without departing from the scope and spirit of the present disclosure. For example, some components in one embodiment can be added to other embodiments. Also, some components in one embodiment can be replaced with corresponding components in other embodiments. ​

Explanation of Symbols

[0094] 1 Plasma processing apparatus, 10 Chamber, 11 Substrate support unit, RF31 Power supply, 111a Substrate support surface, C1 Carbon-containing film, C2 Carbon-containing film, H Heat transfer member, S1 Silicon-containing Sheet, S1a Upper surface of silicon-containing sheet S1, S1b Lower surface of silicon-containing sheet S1 Lower surface, S2 Other silicon-containing sheet, T Base, Ta Upper surface of base, Tb Lower surface of base W Substrate

Claims

1. A plasma processing apparatus, comprising: a chamber, and a substrate support portion positioned within the chamber, wherein the substrate support portion includes a support table, and an electrostatic chuck positioned on the support table, the electrostatic chuck having a substrate support surface and a ring support surface, and a heat transfer sheet disposed in contact with the ring support surface, a carbon-containing film having a thickness of 10 nm or more and 200 nm or less being formed on a surface opposite to the surface on the ring support surface side, and a ring being configured to be disposed on the carbon-containing film, the plasma processing apparatus.

2. A plasma processing apparatus, comprising: a chamber, and a substrate support portion positioned within the chamber, wherein the substrate support portion includes a support table, and an electrostatic chuck positioned on the support table, the electrostatic chuck having a substrate support surface and a ring support surface, and a heat transfer sheet disposed in contact with the ring support surface, a carbon-containing CVD film (excluding a silicon carbide film) being formed on a surface opposite to the surface on the ring support surface side, and a ring being configured to be disposed on the carbon-containing CVD film, the plasma processing apparatus.

3. A plasma processing apparatus, comprising: a chamber, and a substrate support portion positioned within the chamber, wherein the substrate support portion includes a support table, and an electrostatic chuck positioned on the support table, the electrostatic chuck having a substrate support surface and a ring support surface, the ring support surface being configured such that a ring assembly is disposed thereon, wherein the ring assembly includes a ring having a first surface, a heat transfer sheet integrated with the ring in contact with the first surface of the ring, and a carbon-containing film having a thickness of 10 nm or more and 200 nm or less formed on a surface opposite to the first surface side of the heat transfer sheet, the plasma processing apparatus.

4. A plasma processing apparatus, comprising: a chamber, and a substrate support portion positioned within the chamber, wherein the substrate support portion includes a support table, and an electrostatic chuck positioned on the support table, the electrostatic chuck having a substrate support surface and a ring support surface, the ring support surface being configured such that a ring assembly is disposed thereon, wherein the ring assembly includes a ring having a first surface, a heat transfer sheet integrated with the ring in contact with the first surface of the ring, and a carbon-containing CVD film on a surface opposite to the first surface side of the heat transfer sheet, Plasma processing apparatus.

5. The heat transfer sheet contains silicon, and the plasma processing apparatus according to any one of claims 1 to 4.

6. The heat transfer sheet contains at least one selected from the group consisting of a silicon-containing material, a silicon carbide-containing material, and a nano silicon carbide-containing material, and the plasma processing apparatus according to claim 5.

7. The heat transfer sheet further contains at least one selected from the group consisting of a tungsten-containing material, an aluminum oxide-containing material, an aluminum nitride-containing material, a diamond powder-containing material, a carbon nanotube-containing material, fluororubber, and an acrylic resin, and the plasma processing apparatus according to claim 6.

8. The ring is carried in and out of the chamber by a transfer device, and the plasma processing apparatus according to claim 1 or 2.

9. The ring assembly is carried in and out of the chamber by a transfer device, and the plasma processing apparatus according to claim 3 or 4.

10. An electrostatic chuck electrode configured to fix the ring is provided below the ring support surface within the electrostatic chuck, and the plasma processing apparatus according to any one of claims 1 to 4.

11. The thickness of the carbon-containing film is 30 nm or more and 100 nm or less, and the plasma processing apparatus according to claim 1 or 3.

12. A ring assembly used in a plasma processing apparatus having a substrate support portion, a ring having a first surface disposed on a ring placement surface on the substrate support portion, a heat transfer sheet that abuts against the first surface of the ring and is integrated with the ring, and a carbon-containing film having a thickness of 10 nm or more and 200 nm or less formed on a surface opposite to the first surface side of the heat transfer sheet, comprising: a ring assembly.

13. A ring assembly used in a plasma processing apparatus having a substrate support portion, a ring having a first surface disposed on a ring placement surface on the substrate support portion, a heat transfer sheet that abuts against the first surface of the ring and is integrated with the ring, and a carbon-containing CVD film on a surface opposite to the first surface side of the heat transfer sheet, comprising: a ring assembly.

14. The carbon-containing CVD film has a thickness of 10 nm or more and 200 nm or less, and the ring assembly according to claim 13.

15. The thickness of the carbon-containing film is 30 nm or more and 100 nm or less, The ring assembly according to claim 12.

16. The thickness of the carbon-containing CVD film is 30 nm or more and 100 nm or less. The ring assembly according to claim 13 or 14.

17. The heat transfer sheet contains silicon. The ring assembly according to claim 12 or 13.

18. The heat transfer sheet has a thickness of 1000 nm or less. The ring assembly according to claim 12 or 13.

19. The heat transfer sheet contains at least one selected from the group consisting of a silicon-containing material, a silicon carbide-containing material, and a nano silicon carbide-containing material. The ring assembly according to claim 17.

20. The heat transfer sheet containing silicon further contains at least one selected from the group consisting of a tungsten-containing material, an aluminum oxide-containing material, an aluminum nitride-containing material, a diamond powder-containing material, a carbon nanotube-containing material, a fluororubber, and an acrylic resin. The ring assembly according to claim 19.

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