Plasma generating device, film forming device using the same, and film forming method

Abstract

To provide a plasma generator capable of coping with temperature heightening of a process, and adjusting inclination of a coil; and to provide a film deposition apparatus and a film deposition method using the same.SOLUTION: A plasma generator has a housing provided by being fitted into a part of an upper surface of a treatment chamber of a film deposition apparatus, having a projection having a vertically long flat shape, and projecting upward, a coil wound along a side face of the projection, and provided by having a vertically long flat shape, and an inclination adjustment mechanism capable of moving both ends in a longer direction of the coil independently vertically, and changing inclination in the longer direction of the coil.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] The present invention relates to a plasma generation device, a film forming device using the same, and a film forming method.

Background Art

[0002] Conventionally, a plasma generation device and a plasma processing device capable of automatically changing the shape of an antenna have been known (see, for example, Patent Document 1). In such a plasma generation device, a plurality of antenna members are connected to each other by a connecting member, and at least two of the antenna members are moved up and down so that the bending angle can be changed with the connecting member as a fulcrum.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Provided are a plasma generation device capable of coping with a high temperature of a process and adjusting the inclination of a coil, a film forming device using the same, and a film forming method.

Means for Solving the Problems

[0005] To achieve the above object, a plasma generation device according to an aspect of the present disclosure is provided in a part of the upper surface of a processing chamber of a film forming device, and has a housing having a vertically long planar shape and a protruding portion protruding upward from the bottom surface, a coil wound along a side surface of the protruding portion and having a vertically long planar shape, and an inclination adjustment mechanism capable of independently moving each of both ends in the longitudinal direction of the coil up and down to change the inclination of the coil in the longitudinal direction. The tilt adjustment mechanism has a lifting mechanism that suspends and supports both ends of the coil in the longitudinal direction of the coil via connection electrodes that are electrically connected to both ends of the coil, and moves the coil up and down It does.

Effects of the Invention

[0006] According to the present disclosure, it is possible to cope with the high temperature of the process and adjust the inclination of the coil.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Modes for Carrying Out the Invention

[0008] Hereinafter, with reference to the drawings, embodiments for carrying out the present invention will be described.

[0009] [Configuration of Film Forming Apparatus According to First Embodiment] FIG. 1 shows a schematic longitudinal sectional view of an example of a film forming apparatus according to a first embodiment of the present disclosure. Further, FIG. 2 shows a schematic plan view of an example of the film forming apparatus according to the present embodiment. In FIG. 2, for convenience of explanation, the drawing of the top plate 11 is omitted.

[0010] As shown in FIG. 1, the plasma processing apparatus according to the present embodiment includes a vacuum chamber 1 having a substantially circular planar shape, and a rotary table 2 provided in the vacuum chamber 1 and having a rotation center at the center of the vacuum chamber 1 for revolving a wafer W.

[0011] The vacuum chamber 1 is a processing chamber for accommodating the wafer W and performing plasma processing on a film or the like formed on the surface of the wafer W. The vacuum chamber 1 includes a top plate (ceiling portion) 11 provided at a position facing a recess 24 (to be described later) of the rotary table 2 and a container body 12. A seal member 13 provided in a ring shape is provided at the peripheral edge of the upper surface of the container body 12. The top plate 11 is configured to be detachable from the container body 12. The diameter dimension (inner diameter dimension) of the vacuum chamber 1 in plan view is not limited, but can be, for example, about 1100 mm.

[0012] A separation gas supply pipe 51 for supplying a separation gas is connected to the central portion on the upper surface side in the vacuum chamber 1 in order to suppress mixing of different processing gases with each other in the central region C in the vacuum chamber 1.

[0013] The rotary table 2 is fixed to a core portion 21 having a substantially cylindrical shape at the center portion. The rotary table 2 is configured to be rotatable about a vertical axis by a drive unit 23 in the clockwise direction in the example shown in FIG. 2 with respect to a rotary shaft 22 that is connected to the lower surface of the core portion 21 and extends in the vertical direction. The diameter dimension of the rotary table 2 is not limited, but can be, for example, about 1000 mm.

[0014] The rotary shaft 22 and the drive unit 23 are housed in a case body 20. The flange portion on the upper surface side of the case body 20 is airtightly attached to the lower surface of the bottom portion 14 of the vacuum chamber 1. A purge gas supply pipe 72 for supplying nitrogen gas or the like as a purge gas (separation gas) to the lower region of the rotary table 2 is connected to the case body 20.

[0015] The outer peripheral side of the core portion 21 on the bottom portion 14 of the vacuum chamber 1 is formed in a ring shape so as to approach the rotary table 2 from below to form a protruding portion 12a.

[0016] On the surface portion of the rotary table 2, a circular recess 24 for placing a wafer W having a diameter dimension of, for example, 300 mm is formed as a substrate placement region. The plurality of recesses 24 are provided at a plurality of locations, for example, five locations, along the rotation direction of the rotary table 2. The recess 24 has an inner diameter that is slightly larger than the diameter of the wafer W, specifically, about 1 mm to 4 mm larger. Further, the depth of the recess 24 is substantially equal to the thickness of the wafer W or is configured to be larger than the thickness of the wafer W. Therefore, when the wafer W is accommodated in the recess 24, the surface of the wafer W and the surface of the region of the rotary table 2 where the wafer W is not placed are at the same height, or the surface of the wafer W is lower than the surface of the rotary table 2. Even when the depth of the recess 24 is deeper than the thickness of the wafer W, if it is made too deep, it may affect film formation. Therefore, it is preferably up to a depth of about three times the thickness of the wafer W. Further, on the bottom surface of the recess 24, through holes (not shown) through which, for example, three lifting pins described later for lifting the wafer W from below are formed.

[0017] As shown in FIG. 2, along the rotation direction of the rotary table 2, a first processing region P1, a second processing region P2, and a third processing region P3 are provided separately from each other. Since the third processing region P3 is a plasma processing region, hereinafter, it may be represented as the plasma processing region P3. Further, at a position facing the passing region of the concave portion 24 in the rotary table 2, a plurality of, for example, five gas nozzles 31, 32, 33, 41, 42 made of quartz, for example, are radially arranged at intervals in the circumferential direction of the vacuum chamber 1. Each of these gas nozzles 31 to 33, 41, 42 is disposed between the rotary table 2 and the top plate 11. Further, each of these gas nozzles 31, 32, 41, 42 is attached so as to extend horizontally facing the wafer W from the outer peripheral wall of the vacuum chamber 1 toward the central region C, for example. On the other hand, the gas nozzle 33 bends upward from the middle and then extends horizontally again, which will be described later. In the example shown in FIG. 2, from the transfer port 15 described later in the clockwise direction (the rotation direction of the rotary table 2), the plasma processing gas nozzle 33, the separation gas nozzle 41, the first processing gas nozzle 31, the separation gas nozzle 42, and the second processing gas nozzle 32 are arranged in this order. Note that the gas supplied by the second processing gas nozzle 32 is often the same gas as the gas supplied by the plasma processing gas nozzle 33, but it does not necessarily have to be provided if the supply of the gas by the plasma processing gas nozzle 33 is sufficient.

[0018] The first processing gas nozzle 31 forms a first processing gas supply unit. The second processing gas nozzle 32 forms a second processing gas supply unit. Further, the plasma processing gas nozzle 33 forms a plasma processing gas supply unit. The separation gas nozzles 41, 42 each form a separation gas supply unit.

[0019] Each of the nozzles 31 to 33, 41, 42 is connected to a respective gas supply source (not shown) via a flow rate adjustment valve.

[0020] On the lower surface side (the side facing the rotary table 2) of these nozzles 31 to 33, 41, and 42, gas discharge holes 36 for discharging the respective gases described above are formed at a plurality of locations along the radial direction of the rotary table 2, for example, at equal intervals. The separation distance between the lower end edge of each of the nozzles 31 to 35, 41, and 42 and the upper surface of the rotary table 2 is arranged to be about 1 to 5 mm, for example.

[0021] The region below the first processing gas nozzle 31 is a first processing region P1 for adsorbing the first processing gas to the wafer W. The region below the second processing gas nozzle 32 is a second processing region P2 for supplying a second processing gas capable of reacting with the first processing gas to generate a reaction product to the wafer W. Further, the region below the plasma processing gas nozzle 33 becomes a third processing region P3 for performing a modification process on the film on the wafer W. The separation gas nozzles 41 and 42 are provided to form a separation region D that separates the first processing region P1 from the second processing region P2 and the third processing region P3 from the first processing region P1. Note that no separation region D is provided between the second processing region P2 and the third processing region P3. This is because, in many cases, a part of the components contained in the mixed gas supplied in the second processing region P2 and the mixed gas supplied in the third processing region P3 is common to the second processing gas, so there is no particular need to separate the second processing region P2 and the third processing region P3 using a separation gas.

[0022] From the first processing gas nozzle 31, a source gas that forms the main component of the film to be formed is supplied as the first processing gas. For example, when the film to be formed is a silicon oxide film (SiO2), a silicon-containing gas such as an organic aminosilane gas is supplied. From the second processing gas nozzle 32, a reaction gas capable of reacting with the source gas to generate a reaction product is supplied as the second processing gas. For example, when the film to be formed is a silicon oxide film (SiO2), an oxidizing gas such as oxygen gas or ozone gas is supplied. From the plasma processing gas nozzle 33, a mixed gas containing either an oxidizing gas and a rare gas, similar to the second processing gas, is supplied to perform a modification process on the formed film.

[0023] FIG. 3 shows a cross-sectional view along concentric circles of the rotating table of the plasma processing apparatus according to the present embodiment. Note that FIG. 3 is a cross-sectional view from the separation region D through the first processing region P1 to the separation region D.

[0024] On the top plate 11 of the vacuum chamber 1 in the separation region D, a substantially fan-shaped convex portion 4 is provided. The convex portion 4 is attached to the back surface of the top plate 11. Inside the vacuum chamber 1, a flat and low ceiling surface 44 (first ceiling surface) that is the lower surface of the convex portion 4 and ceiling surfaces 45 (second ceiling surfaces) that are higher than the ceiling surface 44 and are located on both circumferential sides of the ceiling surface 44 are formed.

[0025] As shown in FIG. 2, the convex portion 4 that forms the ceiling surface 44 has a fan-shaped planar shape with an arc-shaped cut at the top. Further, in the convex portion 4, a groove portion 43 formed to extend in the radial direction is formed at the center in the circumferential direction, and the separation gas nozzles 41 and 42 are accommodated in this groove portion 43. Note that the peripheral edge portion of the convex portion 4 (the portion on the outer edge side of the vacuum chamber 1) is bent in an L-shape so as to face the outer end surface of the rotating table 2 and be slightly separated from the container body 12 in order to prevent mixing of the respective processing gases.

[0026] Above the first processing gas nozzle 31, a nozzle cover 230 is provided in order to allow the first processing gas to flow along the wafer W and to allow the separation gas to flow through the top plate 11 side of the vacuum chamber 1 while avoiding the vicinity of the wafer W. As shown in FIG. 3, the nozzle cover 230 includes a substantially box-shaped cover body 231 having an opening on the lower surface side for accommodating the first processing gas nozzle 31, and rectifying plates 232 that are plate-like bodies respectively connected to the upstream side and the downstream side in the rotation direction of the rotating table 2 at the opening end on the lower surface side of the cover body 231. Note that the side wall surface of the cover body 231 on the rotation center side of the rotating table 2 extends toward the rotating table 2 so as to face the tip of the first processing gas nozzle 31. Also, the side wall surface of the cover body 231 on the outer edge side of the rotating table 2 is cut out so as not to interfere with the first processing gas nozzle 31.

[0027] As shown in FIG. 2, a plasma generator 80 is provided above the plasma processing gas nozzle 33 to plasmaize the plasma processing gas discharged into the vacuum chamber 1.

[0028] FIG. 4 is a diagram showing the main part of the plasma generator 80. As shown in FIG. 4, the plasma generator 80 has a coil 83 and a housing 90.

[0029] The housing 90 is provided so as to be fitted into the top plate 11 of the vacuum chamber 1 and constitutes a part of the upper surface of the vacuum chamber 1. The housing 90 has a recess 91 and a protruding portion 92 protruding from the bottom surface 91a of the recess 91. The inside of the protruding portion 92 is hollow and constitutes a plasma generation chamber.

[0030] The protruding portion 92 has a vertically long shape extending in one direction. The protruding portion 92 may be configured as, for example, a vertically long polygon. In FIG. 4, the protruding portion 92 is configured as a dodecagon, but it can be configured in various shapes as long as it has four or more sides. In addition to a polygon, it is also possible to configure the both ends in an arc shape like a semi-circle.

[0031] The housing 90 has a flange portion 93 and a downward protruding portion 94. The step between the flange portion 93 and the downward protruding portion 94 functions as an engaging portion when the housing 90 is fitted into the top plate 11 of the vacuum chamber 1.

[0032] The housing 90 can be made of various materials. For example, it may be made of quartz. Since the top plate 11 of the vacuum chamber 1 is also made of quartz, it is preferable that the housing 90 constituting a part of the top plate 11 is also made of quartz.

[0033] The coil 83 functions as an electromagnetic field generation unit for generating an electromagnetic field by applying alternating current power. The coil 83 is wound along the side surface 92a of the protruding portion 92. The coil 83 may be wound around the protruding portion 92 as many times as necessary, but for example, as shown in FIG. 4, it may be wound three times. Both ends 83a and 83b in the longitudinal direction of the coil 83 are pulled upward.

[0034] As shown in FIGS. 1 and 2, the coil 83 is connected to a high-frequency power supply 85 having a frequency of, for example, 13.56 MHz and an output power of, for example, 5000 W via a matching device 84. The coil 83 is provided so as to be hermetically partitioned from the inner region of the vacuum chamber 1. In FIGS. 1 and 2, connection electrodes 86 for electrically connecting the coil 83, the matching device 84, and the high-frequency power supply 85 are provided.

[0035] In FIG. 4, an end portion 83a of the coil 83, which is the apex of the sector of the housing 90, is on the center side of the rotary table 2, and the opposite end portion 83b is on the outer peripheral side of the rotary table 2. And the part extended in the longitudinal direction of the part wound around the side surface of the protruding portion 92 of the coil 83 is provided so as to completely cover the diameter of the recess 24.

[0036] Although details will be described later, the end portions 83a and 83b of the coil 83 are connected to an elevating mechanism and are configured to be able to move up and down independently. Thereby, the coil 83 can be inclined in the radial direction of the rotary table 2, and when the coil 83 is horizontally installed, the imbalance that the plasma processing amount on the center side becomes larger than the plasma processing amount on the outer peripheral side due to the influence of the inner ring difference of the rotary table 2 can be corrected.

[0037] That is, by pulling up the end portion 83a on the center side to make the distance from the rotary table 2 larger than the distance between the end portion 83b on the outer peripheral side and the rotary table 2, the plasma processing amount on the center side can be weakened and the imbalance between the plasma processing amounts on the center side and the outer peripheral side can be corrected.

[0038] FIG. 5 is a cross-sectional view showing the configuration of the plasma generator 80 according to the embodiment of the present disclosure. FIG. 5(a) is a top view of the plasma device 80 according to the present embodiment. FIG. 5(b) is a side cross-sectional view of the plasma generator 80 according to the present embodiment.

[0039] As shown in FIG. 5(a), the coil 83 is configured to have a length that can cover the diameter of the wafer W. Therefore, the side surface 92a in the longitudinal direction of the protruding portion 92 of the housing 90 is provided so as to be longer than the diameter of the wafer W.

[0040] As shown in FIG. 5(b), the inside of the protruding portion 92 constitutes a plasma generation chamber 92b. Since the plasma processing chamber 92b is very close to the coil 83 in terms of distance, the plasma processing gas supplied efficiently can be made into plasma or radicals. As shown in FIG. 5(b), the plasma processing gas is supplied downward from the plasma processing gas nozzle 33 provided near the ceiling surface of the plasma generation chamber 92b, and the plasma processing gas is activated by the coil 83.

[0041] Here, both ends 83a and 83b of the coil 83 are respectively connected to independent lifting mechanisms 87a and 87b via connection electrodes 86. The lifting mechanisms 87a and 87b have, for example, a motor or the like, and can move the ends 83a and 83b of the coil 83 up and down to tilt the coil 83. Note that the lifting mechanisms 87a and 87b are supported by, for example, a support member 88.

[0042] Also, the lifting mechanisms 87a and 87b may be integrally configured. The lifting mechanisms 87a and 87b may have various configurations as long as they can independently move the ends 83a and 83b of the coil 83 up and down.

[0043] Inside the vacuum container 1, in order to suppress the amount of ions generated in the plasma generation chamber 92b, an ion trap plate 140 may be provided as necessary. The ion trap plate 140 is also provided to correct the difference in the plasma processing amount between the center side and the outer peripheral side of the rotary table 2, and adjusts the amount of ions reaching the wafer W by covering more of the center side. The ion trap plate 140 is not essential and may be provided as necessary.

[0044] FIG. 6 is a detailed view showing the configuration around the protruding portion 92 of the housing 90 of the plasma generation apparatus 80 according to the present embodiment. As shown in FIG. 6, the flange portion 93 of the housing 90 is engaged with the opening of the top plate 11 of the vacuum vessel 1 and is fitted into the top plate 11. In the lower protruding portion 94, a plasma processing region P3 for performing plasma processing is defined. The bottom surface of the plasma generation chamber 92b inside the protruding portion 92 of the housing 90 is open, and the plasma processing gas supplied from the plasma processing gas nozzle 33 is supplied to the wafer W. At this time, a coil 83 is wound below the side surface 92a of the protruding portion 92, and electromagnetic waves are generated by the supply of alternating current power, and the plasma processing gas is plasmaized (ionized) or radicalized by the electromagnetic wave energy.

[0045] Then, the plasmaized plasma processing gas is supplied to the wafer W, and the film on the wafer W is modified.

[0046] The central end 83a and the outer peripheral end 83b of the coil 83 are configured to be vertically movable via the connection electrode 86. By inclining the coil 83, the adjustment of the plasma processing amount becomes possible. Specifically, for example, the end 83a of the coil 83 on the central side is raised, the processing amount of the plasma on the central side is reduced, and the balance with the outer peripheral side is made uniform.

[0047] Note that the vertical movement distance of the ends 83a and 83b can be set to various distances according to the application. For example, a setting allowing vertical movement of 150 to 200 mm may be used.

[0048] Also, as shown in FIG. 6, the plasma generation apparatus 80 does not have a Faraday shield. Conventionally, a Faraday shield was provided between the coil 83 and the bottom surface 91a of the housing 90 to cut the electric field component and supply only the magnetic field component to the wafer W. However, since the Faraday shield was made of metal, there was a problem that it could not be used in a high-temperature process of 650° C. or higher.

[0049] In the plasma generator 80 according to this embodiment, the metal Faraday shield is eliminated, and the main part of the plasma generator is composed of only heat-resistant quartz parts. As a result, it is possible to cope with the high temperature of the process.

[0050] As described above, according to the plasma generator and the film forming apparatus according to the first embodiment, while coping with the high temperature process, the plasma processing amount in the radial direction can be adjusted and made uniform.

[0051] Next, other components of the plasma processing apparatus according to this embodiment will be described.

[0052] On the outer peripheral side of the rotary table 2 and slightly below the rotary table 2, as shown in FIG. 2, a side ring 100 which is a cover body is arranged. On the upper surface of the side ring 100, exhaust ports 61 and 62 are formed, for example, at two locations so as to be separated from each other in the circumferential direction. In other words, two exhaust ports are formed on the floor surface of the vacuum chamber 1, and exhaust ports 61 and 62 are formed in the side ring 100 at positions corresponding to these exhaust ports.

[0053] In this embodiment, one and the other of the exhaust ports 61 and 62 are referred to as the first exhaust port 61 and the second exhaust port 62, respectively. Here, the first exhaust port 61 is formed at a position closer to the separation region D between the first processing gas nozzle 31 and the separation region D located on the downstream side in the rotation direction of the rotary table 2 with respect to the first processing gas nozzle 31. Further, the second exhaust port 62 is formed at a position closer to the separation region D between the plasma generator 80 and the separation region D on the downstream side in the rotation direction of the rotary table 2 than the plasma generator 80.

[0054] The first exhaust port 61 is for exhausting the first processing gas and the separation gas, and the second exhaust port 62 is for exhausting the plasma processing gas and the separation gas. These first exhaust port 61 and second exhaust port 62 are each connected to, for example, a vacuum pump 64 which is a vacuum disposal mechanism, by an exhaust pipe 63 provided with a pressure adjustment part 65 such as a butterfly valve.

[0055] As described above, since the housing 90 is arranged from the center region C side to the outer edge side, the gas flowing from the upstream side in the rotation direction of the rotary table 2 to the processing region P2 may have its gas flow toward the exhaust port 62 restricted by this housing 90. Therefore, a groove-shaped gas flow path 101 for the gas to flow is formed on the upper surface of the side ring 100 on the outer peripheral side of the housing 90.

[0056] At the center part on the lower surface of the top plate 11, as shown in FIG. 1, it is formed in a substantially ring shape continuously in the circumferential direction along with the part on the center region C side of the convex part 4, and a protruding part 5 is provided whose lower surface is formed at the same height as the lower surface (ceiling surface 44) of the convex part 4. Above the core part 21 on the rotation center side of the rotary table 2 rather than this protruding part 5, a labyrinth structure part 110 for suppressing various gases from mixing with each other in the center region C is arranged.

[0057] As described above, since the housing 90 is formed up to a position closer to the center region C side, the core part 21 that supports the center part of the rotary table 2 is formed on the rotation center side so that the part above the rotary table 2 avoids the housing 90. Therefore, in the center region C side, the state where various gases are more likely to mix than in the outer edge part side. Therefore, by forming a labyrinth structure above the core part 21, a gas flow path can be secured and it is possible to prevent the gases from mixing with each other.

[0058] As shown in Fig. 1, a heater unit 7, which is a heating mechanism, is provided in the space between the rotary table 2 and the bottom surface portion 14 of the vacuum chamber 1. The heater unit 7 is configured to be able to heat the wafer W on the rotary table 2 via the rotary table 2 to, for example, about room temperature to 300°C. In Fig. 1, a cover member 71a is provided on the side of the heater unit 7, and a covering member 7a is provided to cover the upper side of the heater unit 7. Further, on the bottom surface portion 14 of the vacuum chamber 1, a purge gas supply pipe 73 for purging the arrangement space of the heater unit 7 is provided at a plurality of locations over the circumferential direction on the lower side of the heater unit 7.

[0059] As shown in Fig. 2, a transfer port 15 for transferring the wafer W is formed on the side wall of the vacuum chamber 1 between the transfer arm 10 and the rotary table 2. This transfer port 15 is configured to be able to open and close airtightly from the gate valve G.

[0060] The recess 24 of the rotary table 2 is located at a position facing this transfer port 15 and the wafer W is transferred between the transfer arm 10. Therefore, at a location corresponding to the transfer position on the lower side of the rotary table 2, a lift pin (not shown) and a lift mechanism for lifting the wafer W from the back surface through the recess 24 are provided.

[0061] Further, the plasma processing apparatus according to the present embodiment is provided with a control unit 120 composed of a computer for controlling the operation of the entire apparatus. A program for performing substrate processing described later is stored in the memory of this control unit 120. This program is composed of a group of steps for executing various operations of the apparatus, and is installed from a storage unit 121, which is a storage medium such as a hard disk, a compact disk, a magneto-optical disk, a memory card, or a flexible disk, into the control unit 120.

[0062] In the present embodiment, an example in which the plasma processing apparatus is applied to a film forming apparatus has been described. However, the plasma processing apparatus according to the embodiment of the present invention can be applied to a substrate processing apparatus that performs substrate processing other than film formation, such as an etching apparatus. Further, although the rotating table 2 has been described as an example configured as a rotatable rotating table, the antenna device and the plasma generating device according to the present embodiment can be applied to various substrate processing apparatuses in which adjustment of plasma intensity is preferable. Therefore, the rotation of the rotating table 2 is not necessarily essential.

[0063] [Film Forming Method] Hereinafter, a film forming method using the film forming apparatus according to the embodiment of the present invention will be described.

[0064] First, according to the process, the antenna 83 is set to a predetermined inclination. The inclination angle of the antenna 83 may be specified by the shape of the antenna 83 according to a recipe, for example, or the control unit 120 may make a determination from the recipe content and configure the antenna 83 to be set to a predetermined inclination angle. The setting of the inclination angle of the antenna 83 may be automatically performed by the vertical movement mechanisms 87a and 87b, or may be set by an operator during operation.

[0065] First, the wafer W is carried into the vacuum chamber 1. When carrying in a substrate such as the wafer W, first, the gate valve G is opened. Then, while intermittently rotating the rotating table 2, it is placed on the rotating table 2 through the transfer port 15 by the transfer arm 10.

[0066] Next, the gate valve G is closed, and the wafer W is heated to a predetermined temperature by the heater unit 7 while rotating the rotating table 2 in a state where the inside of the vacuum chamber 1 is set to a predetermined pressure by the vacuum pump 64 and the pressure adjustment unit 65. At this time, a separation gas, for example, Ar gas, is supplied from the separation gas nozzles 41 and 42.

[0067] Subsequently, a first processing gas is supplied from the first processing gas nozzle 31, and a second processing gas is supplied from the second processing gas nozzle 32. Also, a plasma processing gas is supplied from the plasma processing gas nozzle 33 at a predetermined flow rate.

[0068] Here, various gases may be used for the first processing gas, the second processing gas, and the plasma processing gas according to the application. However, a raw material gas is supplied from the first processing gas nozzle 31, and an oxidation gas or a nitriding gas is supplied from the second processing gas nozzle 32. Also, from the plasma processing gas nozzle 33, a plasma processing gas composed of a mixed gas including an oxidation gas or a nitriding gas similar to the oxidation gas or nitriding gas supplied from the second processing gas nozzle and a rare gas is supplied.

[0069] Here, an example will be described in which the film to be formed is a silicon oxide film, the first processing gas is an organic aminosilane gas, the second processing gas is an oxygen gas, and the plasma processing gas is a mixed gas of Ar and O2.

[0070] On the surface of the wafer W, a Si-containing gas or a metal-containing gas is adsorbed in the first processing region P1 by the rotation of the rotary table 2. Then, the Si-containing gas adsorbed on the wafer W in the second processing region P2 is oxidized by the oxygen gas. As a result, one or more molecular layers of the silicon oxide film, which is a thin film component, are formed and reaction products are formed.

[0071] When the rotary table 2 rotates further, the wafer W reaches the plasma processing region P3, and a modification process of the silicon oxide film by plasma processing is performed.

[0072] Since the coil 83 of the plasma generator 80 is inclined so as to perform plasma processing with high in-plane uniformity, plasma processing with high in-plane uniformity can be performed. In combination with the above-described nozzles 33 to 35, film formation with extremely high in-plane uniformity can be performed. That is, it is possible to combine the improvement of in-plane uniformity due to the deformation of the antenna 83 and the in-plane uniformity by setting the supply amount of the plasma gas for each region, and more appropriate adjustment can be performed.

[0073] Further, even when a plurality of nozzles are used, the inclination of the antenna 83 is set to enhance the in-plane uniformity due to the inclination of the coil 83. Therefore, plasma processing with high in-plane uniformity can still be performed.

[0074] When performing plasma processing in the plasma processing region P3, the plasma generator 80 supplies high-frequency power with a predetermined output to the antenna 83.

[0075] In this embodiment, by continuously rotating the rotary table 2, the adsorption of the source gas onto the surface of the wafer W, the oxidation of the source gas components adsorbed on the surface of the wafer W, and the plasma modification of the reaction products are performed multiple times in this order. That is, the film formation process by the ALD method and the modification process of the formed film are performed multiple times by the rotation of the rotary table 2.

[0076] Note that a separation region D is arranged along the circumferential direction of the rotary table 2 between the first and second processing regions P1 and P2 and between the third and first processing regions P3 and P1 in the plasma processing apparatus according to this embodiment. Therefore, in the separation region D, each gas is exhausted toward the exhaust ports 61 and 62 while the mixing of the processing gas and the plasma processing gas is blocked.

[0077] Examples of the first processing gas in this embodiment include silicon-containing gases such as DIPAS [diisopropylaminosilane], 3DMAS [trisdimethylaminosilane] gas, BTBAS [bis-tert-butylaminosilane], DCS [dichlorosilane], and HCD [hexachlorodisilane].

[0078] Also, when applying the plasma processing method according to the embodiment of the present invention to the formation of a TiN film, as the first processing gas, metal-containing gases such as TiCl4 [titanium tetrachloride], Ti(MPD)(THD) [titanium methylpentanedionato bis(tetramethylheptanedionato)], TMA [trimethylaluminum], TEMAZ [tetrakis(ethylmethylamino)zirconium], TEMHF [tetrakis(ethylmethylamino)hafnium], Sr(THD)2 [strontium bis(tetramethylheptanedionato)], etc. may be used.

[0079] As the plasma processing gas, in this embodiment, as an example, Ar gas is used as the rare gas and is described in combination with the oxygen gas for reforming. However, other rare gases may be used, and instead of the oxygen gas, ozone gas or water may also be used.

[0080] Also, in the process of forming a nitride film, NH3 gas or N2 gas may be used for reforming. Further, if necessary, a mixed gas with a hydrogen-containing gas (H2 gas, NH3 gas) may be used.

[0081] Also, as the separation gas, for example, in addition to Ar gas, N2 gas, etc. may be mentioned.

[0082] The flow rate of the first processing gas in the film formation process is not limited, but can be, for example, 50 sccm to 1000 sccm.

[0083] The flow rate of the oxygen-containing gas contained in the plasma processing gas is not limited, but can be, for example, about 500 sccm to 5000 sccm (500 sccm as an example).

[0084] The pressure in the vacuum chamber 1 is not limited, but can be, for example, about 0.5 Torr to 4 Torr (1.8 Torr as an example).

[0085] The temperature of the wafer W can be, although not limited to, about 40°C to 750°C, for example. In particular, the film formation method according to the present embodiment is effective for a high-temperature process and is also applicable to a process of 650°C or higher.

[0086] The rotation speed of the rotary table 2 can be, although not limited to, about 60 rpm to 300 rpm, for example.

[0087] As described above, according to the plasma processing method according to the present embodiment, since the coil 83 is inclined so as to enhance the in-plane uniformity of the plasma processing, plasma processing with high in-plane uniformity can be performed.

[0088] [Plasma Generator According to the Second Embodiment] FIG. 7 is a diagram showing a plasma generator 80a according to the second embodiment. In FIG. 7, it is different from the plasma generator 80a according to the first embodiment only in that a Faraday shield 95 made of quartz is provided.

[0089] The Faraday shield 95 has a slit and has a function of blocking an electric field and allowing only a magnetic field to pass through. Since a metal Faraday shield cannot cope with a high-temperature process of 650°C or higher, a Faraday shield 95 made of quartz may be installed.

[0090] Thereby, while coping with a high-temperature process, plasma processing can be performed using only a magnetic field, and the inclination angle of the coil 83 can be adjusted to equalize the plasma processing amounts on the center side and the outer peripheral side of the rotary table 2.

[0091] Since other configurations and processes are the same as those in the first embodiment, the description thereof is omitted.

[0092] In the present embodiment, an example of using only a rotary table type film forming apparatus has been described, but the present disclosure can also be applied to other single wafer type film forming apparatuses.

[0093] As described above, the preferred embodiments of the present disclosure have been described in detail. However, the present invention is not limited to the above-described embodiments, and various modifications and substitutions can be made to the above-described embodiments without departing from the scope of the present disclosure.

Explanation of Reference Numerals

[0094] 1 Vacuum chamber 2 Rotating table 24 Recesses 31, 32 Processing gas nozzles 33 Plasma processing gas nozzle 36 Gas discharge holes 41, 42 Separation gas nozzles 80, 80a Plasma generators 83 Antenna 85 High-frequency power supply 86 Connection electrode 87a, 87b Vertical movement mechanism 90 Housing 91 Depression 91a Bottom surface 92 Protrusion 92a Side surface 92b Plasma generation chamber 95 Faraday shield P1 First processing region (raw material gas supply region) P2 Second processing region (reaction gas supply region) P3 Third processing region (plasma processing region) W Wafer

Claims

1. A housing that is fitted and provided in a part of the upper surface of the processing chamber of a film forming apparatus, has a vertically long planar shape, and has a protruding portion that protrudes upward from the bottom surface; A coil that is wound along the side surface of the protruding portion and has a vertically long planar shape; An inclination adjustment mechanism that can independently move up and down each of both ends in the longitudinal direction of the coil to change the inclination of the coil in the longitudinal direction; and The inclination adjustment mechanism is a plasma generation apparatus having a lifting mechanism that suspends and supports both ends in the longitudinal direction of the coil via connection electrodes electrically connected to both ends of the coil and moves them up and down.

2. The plasma generation apparatus according to claim 1, wherein a plasma generation space for generating plasma is formed below the protruding portion.

3. The plasma generation apparatus according to claim 1 or 2, wherein the housing is made of quartz.

4. The plasma generation apparatus according to any one of claims 1 to 3, wherein the vertically long planar shape of the protruding portion is a polygon.

5. The plasma generation apparatus according to any one of claims 1 to 4, wherein the housing has a sector shape, and the protruding portion is provided to extend along a chord at the center of the sector.

6. A processing chamber; A rotary table provided in the processing chamber; In a part of the upper surface of the processing chamber, there is a protruding portion having a vertically long planar shape extending along the radius of the rotary table and protruding upward from the upper surface; A coil that is wound along the side surface of the protruding portion and has a vertically long planar shape; An inclination adjustment mechanism that can independently move up and down each of both ends in the longitudinal direction of the coil to change the inclination of the coil in the longitudinal direction; and The inclination adjustment mechanism is a film forming apparatus having a lifting mechanism that suspends and supports both ends in the longitudinal direction of the coil via connection electrodes electrically connected to both ends of the coil and moves them up and down.

7. The film forming apparatus according to claim 6, wherein a plasma generation space for generating plasma is formed below the protruding portion.

8. A plurality of substrate placement regions are provided on the upper surface of the rotary table along the circumferential direction; The film forming apparatus according to claim 6 or 7, wherein the coil is longer than the diameter of the substrate placement region and is provided to cover the entire longitudinal direction of the substrate placement region.

9. The film forming apparatus according to any one of claims 6 to 8, wherein the upper surface is made of quartz.

10. The film forming apparatus according to any one of claims 6 to 9, wherein the longitudinal planar shape of the protruding portion is polygonal.

11. The film forming apparatus according to any one of claims 6 to 10, wherein the protruding portion is formed on the bottom surface of a housing fitted and provided so as to form a part of the upper surface of the processing chamber.

12. The film forming apparatus according to claim 11, wherein the bottom surface of the housing is formed lower than the upper surface of the processing chamber.

13. A step of adsorbing a first processing gas in a first processing region provided along the circumferential direction of the rotary table on the surface of a substrate placed on the rotary table provided in the processing chamber; Rotating the rotary table, and in a second processing region downstream of the first processing region in the circumferential direction of the rotary table, supplying a second processing gas that reacts with the first processing gas adsorbed on the surface of the substrate to generate a reaction product, and depositing the reaction product on the surface of the substrate; Rotating the rotary table, and in an ion trap plate processing region downstream of the second processing region in the circumferential direction of the rotary table, using a coil having a longitudinal planar shape extending along the radius of the rotary table and wound along the side surface of a protruding portion protruding upward from the upper surface, supplying the reaction product while activating a third processing gas, and reforming the reaction product; A film forming method comprising: changing the inclination in the longitudinal direction of the coil by independently moving the both ends of the coil in the longitudinal direction up and down by suspending and supporting the both ends of the coil via connection electrodes electrically connected to the both ends of the coil by a lifting mechanism of an inclination adjustment mechanism.

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