Reaction chamber and oxidation device

Abstract

To provide a reaction chamber and an oxidation apparatus, capable of improving a quality of a silicon dioxide to be generated.SOLUTION: A reaction chamber comprises: a chamber main body 1; and an introducing pipe 12. A wafer mounting stage 11 is provided inside the chamber main body, a reaction region for housing a wafer is formed onto the wafer mounting stage. An upper surface of the reaction region is not lower than the upper surface of the wafer. A hole 13 is provided in a side wall of the chamber main body. The introducing pipe is provided inside the chamber main body, contains a pipe main body 121, is extended toward the reaction region so that a suction port 122 of the pipe main body is communicated to the hole, and an exhaust port 123 is used for transporting a plasma to the upper surface of the reaction region.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and particularly to a reaction chamber and an oxidation apparatus.

Background Art

[0002] In the oxidation process of a wafer, a mixed gas of oxygen gas and hydrogen gas (microwave plasma) is dissociated into a plasma rich in oxygen free radicals through a microwave plasma source. The plasma enters the reaction chamber and generates silicon dioxide on the wafer surface. The concentration and distribution of oxygen free radicals on the wafer surface directly affect the growth rate of silicon dioxide.

Summary of the Invention

Problems to be Solved by the Invention

[0003] The present disclosure provides a reaction chamber and an oxidation apparatus.

Means for Solving the Problems

[0004] According to one aspect of the present disclosure, a reaction chamber is provided, which includes a chamber body and a flow guiding pipe.

[0005] Inside the chamber body, a wafer stage is provided. In the wafer stage, a reaction region for accommodating a wafer is formed, and the upper surface of the reaction region is not lower than the upper surface of the wafer. On the side wall of the chamber body, holes are provided for transporting plasma into the interior of the chamber body.

[0006] The flow guiding pipe is provided inside the chamber body. The flow guiding pipe includes a pipe body. The air inlet at one end of the pipe body communicates with the hole, and the exhaust port at the other end extends towards the reaction region. The exhaust port is used to transport the plasma to the upper surface of the reaction region so that the plasma reacts with the upper surface of the wafer.

[0007] According to another aspect of the present disclosure, A reaction chamber according to any of the embodiments of the present disclosure, and a plasma source provided outside the reaction chamber, wherein a plasma output port of the plasma source communicates with the hole, and provides an oxidation device.

Advantages of the Invention

[0008] According to the embodiment of the present disclosure, since the flow guide tube is provided between the hole and the wafer stage, the plasma that has entered the inside of the chamber body through the hole is transported through the flow guide tube and gathers on the upper surface of the wafer. Thereby, the diffusion of the plasma to the regions other than the upper surface of the wafer is avoided, and by increasing the concentration of the plasma on the upper surface of the wafer, the growth rate of silicon dioxide generated on the upper surface of the wafer is increased, and the quality of the generated silicon dioxide is improved.

[0009] It should be understood that the content described in the summary of the invention is not intended to identify the main features or important features of the embodiments of the present disclosure, nor is it intended to limit the scope of the present disclosure. Other features of the present disclosure will be easily understood from the following description.

[0010] Referring to the following detailed description with reference to the drawings, the above and other features, advantages, and aspects of each embodiment of the present disclosure will become more apparent. In the drawings, the same or similar reference numerals represent the same or similar elements.

Brief Description of the Drawings

[0011]

Figure 1

Figure 2

Figure 3

Figure 4

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Figure 10

Mode for Carrying Out the Invention

[0012] Hereinafter, exemplary embodiments of the present disclosure will be described with reference to the drawings, and various details of the embodiments of the present disclosure are included for the purpose of assisting understanding in the description, but these should be regarded as merely exemplary. Therefore, those skilled in the art should recognize that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of the present disclosure. Similarly, in the following description, descriptions of well-known functions and structures are omitted for the purpose of clarification and brevity.

[0013] Embodiments of the present disclosure provide a reaction chamber including a chamber body 1 and a flow guiding pipe 12 as shown in FIGS. 1 to 3.

[0014] A wafer mounting table 11 is provided inside the chamber body 1, and a reaction region 111 for accommodating a wafer is formed on the wafer mounting table 11, and the upper surface of the reaction region 111 is not lower than the upper surface of the wafer. A hole 13 for transporting plasma into the chamber body 1 is provided on the side wall of the chamber body 1.

[0015] The flow guide tube 12 is provided inside the chamber body 1 and includes a tube body 121. The intake port 122 at one end of the tube body 121 communicates with the hole 13, and the exhaust port 123 at the other end of the tube body 121 extends toward the reaction region 111. The exhaust port 123 is used to transport the plasma to the upper surface of the reaction region 111 so as to react the plasma with the upper surface of the wafer.

[0016] According to the embodiments of the present disclosure, the following will be described.

[0017] FIGS. 1 and 2 are top views of the reaction chamber. In FIGS. 1 and 2, both the left - right direction and the up - down direction of the reaction chamber are defined as the width direction of the chamber body 1, and the front - rear direction of the reaction chamber in FIGS. 1 and 2 is defined as the height direction of the chamber body 1.

[0018] FIG. 3 is a side view of the reaction chamber. In FIG. 3, the left - right direction of the reaction chamber is defined as the width direction of the chamber body 1, and the up - down direction of the reaction chamber in FIG. 3 is defined as the height direction of the chamber body 1.

[0019] The inside of the chamber body 1 may be understood as a space for performing the oxidation reaction of the wafer surrounded by the inner wall of the chamber body 1. The shape and size of the inside of the chamber body 1 can be selected or adjusted as needed, so it is not particularly limited here. For example, the inside of the chamber body 1 may have a rectangular structure, a cylindrical structure, or a prismatic structure.

[0020] The arrangement position of the wafer stage 11 inside the chamber body 1 can be selected or adjusted as needed. For example, the wafer stage 11 may be horizontally arranged along the width direction of the chamber body 1, and spatially, it may be arranged below the hole 13 or substantially horizontally with the hole 13.

[0021] The arrangement method of the wafer stage 11 in the chamber body 1 can be selected or adjusted as needed. For example, by rotatably providing the wafer stage 11 in the chamber body 1, the plasma transported through the flow guide tube 12 can be uniformly distributed on the upper surface of the wafer. And / or, by providing the wafer stage 11 in the chamber body 1 so as to be movable up and down, the height position of the wafer stage 11 with respect to the exhaust port 123 of the flow guide tube 12 can be adjusted, and the plasma transported through the flow guide tube 12 can be transported to the upper surface of the wafer as much as possible without leaking to areas other than the upper surface of the wafer.

[0022] The reaction region 111 may be understood as a predetermined space located on the upper end surface of the wafer stage 11, and this predetermined space can completely accommodate the wafer.

[0023] A reaction region 111 for accommodating the wafer is formed on the wafer stage 11, and the upper surface of the reaction region 111 is not lower than the upper surface of the wafer. This may be understood as the outer edge of the reaction region 111 corresponding to the outer edge of the wafer, and the upper surface of the reaction region 111 corresponding to the upper surface of the wafer or being higher than the upper surface of the wafer. That is, the reaction region 111 can completely enclose the wafer.

[0024] A hole 13 is provided in the side wall of the chamber body 1. This may be understood as a hole 13 being provided at any position on any side wall of the chamber body 1. Here, the shapes and sizes of the hole 13, the plasma output port of the plasma source 2, and the exhaust port 123 are compatible with each other.

[0025] The intake port 122 and the exhaust port 123 of the flow guide tube 12 are in communication, and the plasma output port of the plasma source 2 transports the plasma through the hole 13 in the side wall, the intake port 122 of the tube body 121, and the exhaust port 123 of the tube body 121 in sequence to the reaction region 111 inside the chamber body 1.

[0026] The exhaust port 123 at the other end of the pipe body 121 extends toward the reaction region 111. Here, the relative positional relationship between the exhaust port 123 and the reaction region 111 can be selected or adjusted as needed. For example, the exhaust port 123 extends to a position where the lower edge of the exhaust port 123 is located above the upper surface of the reaction region 111, and the end face of the exhaust port 123 extends to a position outside the edge of the reaction region 111. For example, the exhaust port 123 extends to a position where the lower edge of the exhaust port 123 is flush with the upper surface of the reaction region 111, and the end face of the exhaust port 123 extends to a position outside the edge of the reaction region 111. For example, the exhaust port 123 extends to a position where the lower edge of the exhaust port 123 is located above the upper surface of the reaction region 111, and the end face of the exhaust port 123 extends to a position in contact with the edge of the reaction region 111. For example, the exhaust port 123 extends to a position where the lower edge of the exhaust port 123 is flush with the upper surface of the reaction region 111, and the end face of the exhaust port 123 extends to a position in contact with the edge of the reaction region 111.

[0027] The shape of the pipe body 121 can be selected or adjusted as needed. For example, the size of the pipe body 121 in the width direction of the chamber body 1 near the exhaust port 123 is larger than the size of the pipe body 121 in the width direction of the chamber body 1 near the intake port 122, so that the plasma diffuses outward from the exhaust port 123 over a larger area.

[0028] The material of the flow guide pipe 12 can be selected or adjusted as needed. For example, the flow guide pipe 12 may adopt a quartz material so as not to adversely affect the production quality of silicon dioxide during the reaction of the wafer.

[0029] When an oxidation process is performed on the wafer, the mixed gas of oxygen gas and hydrogen gas, which is the reaction gas, is dissociated by the plasma source 2 into a plasma rich in oxygen free radicals. The plasma is transported into the chamber body 1 through the flow guide pipe 12 and gathers on the upper surface of the wafer, whereby a high-quality silicon dioxide oxide film is formed on the upper surface of the wafer.

[0030] According to an embodiment of the present disclosure, by providing the flow guiding pipe 12 communicating with the hole 13 inside the chamber body 1, the gap between the hole 13 and the wafer is reduced, and the plasma entering the inside of the chamber body 1 through the hole 13 can be directly guided to the upper surface of the wafer through the flow guiding pipe 12. Thereby, it is possible to avoid the plasma diffusing and leaking to regions other than the upper surface of the wafer after entering the chamber body 1, and reduce the loss of the plasma transported into the chamber body 1. In addition, since the plasma directly gathers on the upper surface of the wafer, the concentration of the plasma on the upper surface of the wafer can be increased, and further, the growth rate of the silicon dioxide thin film on the upper surface of the wafer can be increased.

[0031] In one example, the inside of the chamber body 1 may be in a low-pressure environment, and the internal air pressure may be less than 20 Torr.

[0032] According to an embodiment of the present disclosure, in a reaction chamber in a low-pressure environment, since the plasma does not freely diffuse after entering the inside of the chamber body 1, the plasma is directly transported to the reaction region 111 through the flow guiding pipe 12. Thereby, the plasma gathers on the upper surface of the wafer without diffusing to regions other than the upper surface of the wafer. In this way, the concentration of the plasma on the upper surface of the wafer increases, and the growth rate of the silicon dioxide oxide film on the upper surface of the wafer becomes higher.

[0033] In one example, the process environment of the reaction chamber satisfies at least any one of the following: the process temperature is 600°C to 1200°C, the process pressure is less than 20 Torr, the gas flow rate is 1 SLM to 30 SLM, and the mixed gas of hydrogen gas and oxygen gas dissociates into plasma rich in oxygen-free radicals (the proportion of hydrogen is less than 30%), or any combination of these.

[0034] In one embodiment, the lower edge of the exhaust port 123 is located above the upper surface of the reaction region 111, and the end face of the exhaust port 123 is located outside the edge of the reaction region 111. That is, the upper surface of the reaction region 111 is located obliquely below the lower edge of the exhaust port 123.

[0035] According to an embodiment of the present disclosure, the following will be described.

[0036] The lower edge of the exhaust port 123 may be understood as the edge closer to the reaction region 111 of the exhaust port 123.

[0037] The end face of the exhaust port 123 may be understood as a plane surrounded by the outer edge contour of the exhaust port 123.

[0038] According to an embodiment of the present disclosure, by providing the exhaust port 123 at a position obliquely above the upper surface of the reaction region 111, the plasma enters the inside of the chamber body 1 through the flow guide pipe 12 and is directly discharged from the exhaust port 123 to the upper surface of the reaction region 111, thereby avoiding the diffusion of the plasma to the bottom surface of the wafer or the outside of the wafer. In addition, the collision between the exhaust port 123 and the wafer is also avoided.

[0039] In one embodiment, in the height direction of the chamber body 1, the vertical distance between the lower edge of the exhaust port 123 and the upper surface of the reaction region 111 is 2 mm to 5 mm, and in the width direction of the chamber body 1, the horizontal distance between the end face of the exhaust port 123 and the outer edge of the reaction region 111 is 2 mm to 5 mm.

[0040] According to an embodiment of the present disclosure, by providing the exhaust port 123 at a position obliquely above the upper surface of the reaction region 111, the plasma enters the inside of the chamber body 1 through the flow guide pipe 12 and is directly discharged from the exhaust port 123 to the upper surface of the reaction region 111, thereby avoiding the diffusion of the plasma to the bottom surface of the wafer or the outside of the wafer. In addition, the collision between the exhaust port 123 and the wafer is also avoided.

[0041] In one embodiment, as shown in FIG. 4, the pipe body 121 is a flexible pipe body 121 that can be expanded and contracted. And / or, the exhaust port 123 is rotatably connected to the pipe body 121.

[0042] According to an embodiment of the present disclosure, the following will be described.

[0043] The flexible tube body 121 that can be expanded and contracted may be understood such that the portion of the tube body 121 between the air inlet 122 and the air outlet 123 can adjust its length and bending posture as needed. For example, by pulling or bending the tube body 121, the air outlet 123 is made to face the wafer directly.

[0044] The air outlet 123 is rotatably connected to the tube body 121, which may be understood such that the air outlet 123 can rotate independently with respect to the tube body 121 and the orientation of the air outlet 123 can be adjusted.

[0045] According to an embodiment of the present disclosure, the relative positional relationship between the air outlet 123 and the wafer can be adjusted, and it becomes possible to directly discharge the plasma from the air outlet 123 of the flow guide tube 12 onto the upper surface of the wafer.

[0046] In one embodiment, as shown in FIGS. 1 to 3, the chamber body 1 is also provided with a wafer placement port 14 for placing or removing the wafer.

[0047] In one embodiment, as shown in FIG. 1, the central axis of the hole 13 intersects the central axis of the wafer stage 11, and the central axis of the hole 13 is parallel to the central axis of the end face of the air outlet 123. The end face of the air outlet 123 is parallel to the plane where the hole 13 is located, and the edge portions on both sides of the air outlet 123 in the width direction of the chamber body 1 are provided symmetrically with respect to the central axis of the wafer stage 11.

[0048] According to an embodiment of the present disclosure, the following will be described.

[0049] The end face of the exhaust port 123 is parallel to the plane where the hole 13 is located. When the hole 13 is an arc-shaped hole (each side of the hole 13 is not in the same vertical plane), it may be understood that the exhaust port 123 is an arc-shaped port. When the hole 13 is a planar hole (each side of the hole 13 is in the same vertical plane), it may be understood that the exhaust port 123 is a planar port. Alternatively, the hole 13 is a planar hole (each side of the hole 13 is in the same vertical plane), and the exhaust port 123 is an arc-shaped port (each side of the exhaust port 123 is not in the same vertical plane, but the projection of each side of the exhaust port 123 on the vertical plane where one of its sides is located is parallel to the plane where the hole 13 is located).

[0050] The edge portions on both sides of the exhaust port 123 in the width direction of the chamber body 1 are provided symmetrically with respect to the central axis of the wafer mounting table 11. This may be understood as the cross-sectional shape of the exhaust port 123 being a symmetric figure, such as a circular shape, a square shape, or any arbitrary symmetric shape. In this way, the distances from both the left and right sides of the exhaust port 123 to the edge of the wafer mounting table 11 and the reaction region 111 are equal, ensuring that the plasma is uniformly output from the exhaust port 123 to the upper surface of the wafer. Here, the width of the exhaust port 123 can be selected or adjusted as needed. For example, the width of the exhaust port 123 is equal to the width of the intake port 122 or larger than the width of the intake port 122.

[0051] According to the embodiments of the present disclosure, by providing the exhaust port 123 facing the wafer, the areas of the plasma output from both the left and right sides of the exhaust port 123 are the same, the plasma is uniformly output from the exhaust port 123 to the upper surface of the wafer, and the uniformity of the formation of silicon dioxide can be improved.

[0052] In one embodiment, as shown in FIGS. 1 and 5, the central axis of the hole 13 intersects the central axis of the wafer stage 11, and the central axis of the hole is parallel to the central axis of the end face of the exhaust port 123. The end face of the exhaust port 123 is parallel to the plane where the hole 13 is located. The edges on both sides of the exhaust port 123 in the width direction of the chamber body 1 are provided symmetrically with respect to the central axis of the wafer stage 11. The pipe body 121 has a structure that gradually expands axially symmetrically along its own length direction. The enlarged diameter end of the pipe body 121 forms the exhaust port 123, and the reduced diameter end of the pipe body 121 forms the intake port 122. The diameter of the exhaust port 123 in the width direction of the chamber body 1 is larger than the diameter of the intake port 122 in the width direction of the chamber body 1.

[0053] According to an embodiment of the present disclosure, the following will be described.

[0054] The diameter of the exhaust port 123 in the width direction of the chamber body 1 is larger than the diameter of the intake port 122 in the width direction of the chamber body 1. This can be understood as the width of the exhaust port 123 being larger than the width of the intake port 122, the height of the exhaust port 123 being larger than the height of the intake port 122, and the end of the exhaust port 123 being a diffusion end with a larger diameter, or the width of the exhaust port 123 being larger than the width of the intake port 122, the height of the exhaust port 123 being equal to the height of the intake port 122, and the end of the exhaust port 123 being a flat diffusion end with the same height diameter, or the width of the exhaust port 123 being larger than the width of the intake port 122, the height of the exhaust port 123 being smaller than the height of the intake port 122, and the end of the exhaust port 123 being a flat diffusion end with a relatively small height diameter.

[0055] According to an embodiment of the present disclosure, by increasing the width of the exhaust port 123, the plasma sprayed from the exhaust port 123 can cover the upper surface of the wafer over a wider area, and thus can contact the upper surface of the wafer over a wider area, improving the concentration of the plasma on the upper surface of the wafer.

[0056] In one embodiment, as shown in FIG. 2, the central axis of the hole 13 is offset from the central axis of the wafer stage 11, the end face of the exhaust port 123 is parallel to the height direction of the chamber body 1, and is provided inclined with respect to the end face of the hole 13.

[0057] According to an embodiment of the present disclosure, the following will be described.

[0058] The central axis of the hole 13 is offset from the central axis of the wafer stage 11. This means that the hole 13 is not directly facing the wafer stage 11, that is, it may be understood that a part of the extension region of the hole 13 overlaps with the top region of the wafer stage 11, or the extension region of the hole 13 is not located outside the top region of the wafer stage 11.

[0059] The end face of the exhaust port 123 is parallel to the height direction of the chamber body 1. This means that all sides of the exhaust port 123 are on the same vertical plane, and this vertical plane may be understood to be parallel to the height of the chamber body 1. That is, the plane where the exhaust port 123 is located is perpendicular to the plane where the wafer stage 11 is located.

[0060] The end face of the exhaust port 123 is provided inclined with respect to the end face of the hole 13. This means that the end face of the exhaust port 123 can rotate towards the center of the wafer stage 11 along the axis in the height direction of the chamber body 1, and it may be understood that the end face of the exhaust port 123 after rotation is provided at an angle with respect to the end face of the hole 13.

[0061] According to an embodiment of the present disclosure, when the hole 13 of the chamber body 1 is provided away from the center of the wafer stage 11, by providing the exhaust port 123 inclined, the plasma is guided to the upper surface of the wafer. When the plasma is transported into the chamber body 1, without being affected by the position of the hole 13, it is completely guided to the upper surface of the wafer without leaking to regions other than the upper surface of the wafer, thereby ensuring that a high concentration of plasma accumulates on the upper surface of the wafer.

[0062] In one example, as shown in FIG. 2, when the central axis of the hole 13 is on the first side of the central axis of the wafer stage 11, the end face of the exhaust port 123 is parallel to the height direction of the chamber body 1, and is provided to be inclined toward the second side with respect to the end face of the hole 13, where the second side is opposite to the first side. Preferably, the plane of the left side of the exhaust port 123 intersects with the extended region of the top of the wafer stage 11, and the plane of the right side of the exhaust port 123 is provided to be in contact with the edge of the extended region of the top of the wafer stage 11. With such a configuration, the free diffusion of the plasma output from the right side of the exhaust port 123 is reduced.

[0063] In one embodiment, as shown in FIGS. 2 and 6, the central axis of the hole 13 is offset from the central axis of the wafer stage 11, and the end face of the exhaust port 123 is parallel to the height direction of the chamber body 1 and is provided to be inclined with respect to the end face of the hole 13. The pipe body 121 has a structure that gradually expands asymmetrically along its own length direction. The enlarged diameter end of the pipe body 121 forms the exhaust port 123, and the reduced diameter end of the pipe body 121 forms the intake port 122. The diameter of the exhaust port 123 in the width direction of the chamber body 1 is larger than the diameter of the intake port 122 in the width direction of the chamber body 1. The pipe wall on the side of the pipe body 121 close to the central axis of the wafer stage 11 is an arc-shaped pipe wall, and the pipe wall curves toward the central axis of the wafer stage 11. The pipe wall on the side of the pipe body 121 away from the central axis of the wafer stage 11 is an arc-shaped or straight pipe wall. When the pipe wall is an arc-shaped pipe wall, it curves toward the central axis of the wafer stage 11.

[0064] According to the embodiments of the present disclosure, the following will be described.

[0065] The diameter of the exhaust port 123 in the width direction of the chamber body 1 is larger than the diameter of the intake port 122 in the width direction of the chamber body 1. This can be understood as the width of the exhaust port 123 being larger than the width of the intake port 122, the height of the exhaust port 123 being larger than the height of the intake port 122, the end of the exhaust port 123 being a diffusion end with a larger diameter, or the width of the exhaust port 123 being larger than the width of the intake port 122, the height of the exhaust port 123 being equal to the height of the intake port 122, the end of the exhaust port 123 being a flat diffusion end with an equal-diameter in height, or the width of the exhaust port 123 being larger than the width of the intake port 122, the height of the exhaust port 123 being smaller than the height of the intake port 122, and the end of the exhaust port 123 being a flat diffusion end with a relatively small-diameter in height.

[0066] According to an embodiment of the present disclosure, by increasing the width of the exhaust port 123, the plasma sprayed from the exhaust port 123 can cover the upper surface of the wafer over a wider area, and thus can come into contact with the upper surface of the wafer over a wider area, improving the concentration of the plasma on the upper surface of the wafer.

[0067] In one embodiment, as shown in FIG. 7, the diameter of the exhaust port 123 in the height direction of the chamber body 1 is smaller than the diameter of the intake port 122 in the height direction of the chamber body 1.

[0068] According to an embodiment of the present disclosure, by reducing the height of the exhaust port 123, the speed at which the plasma is output from the exhaust port 123 can be increased, and the diffusion of the plasma into areas other than the upper surface of the wafer after being output from the exhaust port 123 can be avoided.

[0069] In one embodiment, the central axis of the hole 13 intersects the central axis of the wafer mounting table 11, and the central axis of the hole 13 is parallel to the central axis of the end face of the exhaust port 123. The end face of the exhaust port 123 is parallel to the plane where the hole 13 is located. The edges on both sides of the exhaust port 123 in the width direction of the chamber body 1 are provided symmetrically with respect to the central axis of the wafer mounting table 11. The pipe body 121 has a structure that gradually expands symmetrically along its own length direction. The enlarged diameter end of the pipe body 121 forms the exhaust port 123, and the reduced diameter end of the pipe body 121 forms the intake port 122. The diameter of the exhaust port 123 in the width direction of the chamber body 1 is larger than the diameter of the intake port 122 in the width direction of the chamber body 1. The diameter of the exhaust port 123 in the height direction of the chamber body 1 is smaller than the diameter of the intake port 122 in the height direction of the chamber body 1.

[0070] In one embodiment, the central axis of the hole 13 is offset from the central axis of the wafer mounting table 11. The end face of the exhaust port 123 is parallel to the height direction of the chamber body 1 and is inclined with respect to the end face of the hole 13. The pipe body 121 has a structure that gradually expands asymmetrically along its own length direction. The enlarged diameter end of the pipe body 121 forms the exhaust port 123, and the reduced diameter end of the pipe body 121 forms the intake port 122. The diameter of the exhaust port 123 in the width direction of the chamber body 1 is larger than the diameter of the intake port 122 in the width direction of the chamber body 1. The diameter of the exhaust port 123 in the height direction of the chamber body 1 is smaller than the diameter of the intake port 122 in the height direction of the chamber body 1.

[0071] In one embodiment, the diameter of the exhaust port 123 in the height direction of the chamber body 1 is smaller than the diameter of the intake port 122 in the height direction of the chamber body 1. The diameter of the exhaust port 123 in the width direction of the chamber body 1 is equal to the diameter of the intake port 122 in the width direction of the chamber body 1.

[0072] In one embodiment, as shown in FIG. 5, the shape of the exhaust port 123 may be a flat mouth shape, and / or the shape of the intake port 122 may be a circular shape.

[0073] According to an embodiment of the present disclosure, by providing a flat mouth-shaped exhaust port 123, the width of the exhaust port 123 is increased, and the area for outputting plasma in the cross-section of the exhaust port 123 becomes larger, so that the plasma contacts the upper surface of the wafer over a wider area, and the concentration of plasma on the upper surface of the wafer can be improved. Further, by providing a circular intake port 122, it is more suitable for the circular plasma output port of the plasma source 2.

[0074] As shown in FIGS. 8 to 10, an embodiment of the present disclosure provides an oxidation apparatus including a plasma source 2 and a reaction chamber described in any of the above embodiments.

[0075] The plasma source 2 is provided outside the reaction chamber, and the plasma output port of the plasma source 2 communicates with the hole 13.

[0076] According to an embodiment of the present disclosure, the following will be described.

[0077] The plasma source 2 may be understood as a plasma generator having any structure in the prior art.

[0078] According to an embodiment of the present disclosure, by providing a flow guide tube 12 communicating with the hole 13 inside the chamber body 1, the gap between the hole 13 and the wafer becomes smaller. The plasma entering the inside of the chamber body 1 through the hole 13 can be directly guided to the upper surface of the wafer through the flow guide tube 12, thereby avoiding the diffusion and leakage of the plasma into regions other than the upper surface of the wafer after entering the chamber body 1, and reducing the loss of the plasma transported into the chamber body 1. Further, since the plasma directly gathers on the upper surface of the wafer, the concentration of the plasma on the upper surface of the wafer increases, and thus the growth rate of the silicon dioxide thin film on the upper surface of the wafer can be increased.

[0079] In one example, the oxidation device of the embodiments of the present disclosure includes a plasma source 2 and a reaction chamber. A wafer mounting table 11 is provided inside the chamber body 1 of the reaction chamber. A reaction region 111 for accommodating a wafer is formed on the wafer mounting table 11, and the upper surface of the reaction region 111 is not lower than the upper surface of the wafer. A hole 13 is provided in the side wall of the chamber body 1, and the hole 13 communicates with the plasma output port of the plasma source 2. The flow guiding pipe 12 of the reaction chamber is provided inside the chamber body 1. The flow guiding pipe 12 includes a pipe body 121. The air inlet 122 at one end of the pipe body 121 communicates with the hole 13, and the exhaust port 123 at the other end of the pipe body 121 extends toward the reaction region 111. The exhaust port 123 is used to transport the plasma to the upper surface of the reaction region 111 so as to react the plasma with the upper surface of the wafer.

[0080] In one example, the plasma source 2 of the oxidation device is attached to the side wall of the chamber body 1. The interior of the chamber body 1 is designed to be square. The internal air pressure of the chamber body 1 is less than 20 Torr. The outlet of the plasma source 2 is flush with the inner wall of the chamber body 1. The wafer is located at the central position of the reaction chamber, and there is a certain gap between the wafer and the outlet of the plasma source 2. The ionized plasma flows to the upper surface (top surface) of the wafer after passing through the gap from the outlet of the plasma source 2 for reaction. Therefore, a part of the plasma flows along the gap to the lower surface of the wafer, thereby reducing the concentration of the plasma on the upper surface of the wafer. According to the oxidation device of the present disclosure, by providing the flow guiding pipe 12 at the outlet of the generator of the plasma source 2, the plasma can be directly guided to the surface of the wafer through the flow guiding pipe 12, so that the loss of the plasma can be avoided and the growth rate of the oxide film (silicon dioxide) can be increased.

[0081] In the description of this specification, the orientation or positional relationship indicated by terms such as "center", "vertical direction", "horizontal direction", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial direction", "radial direction", and "circumferential direction" is based on the direction or positional relationship shown in the drawings, and is merely for facilitating the description of the present disclosure and simplifying the description, and does not indicate or imply that the relevant device or element must have a specific orientation, be configured and operate in a specific orientation, nor is it understood as limiting the present disclosure.

[0082] Furthermore, the terms "first" and "second" are used only for the purpose of description, and are not understood as indicating or implying relative importance or suggesting the number of the indicated technical features. Therefore, the features limited to "first" and "second" may explicitly or implicitly include one or more of the said features. In the description of the present disclosure, unless otherwise explicitly and specifically limited, the meaning of "a plurality" is two or more.

[0083] In the present disclosure, unless there are particularly clear regulations and limitations, terms such as "attach", "connect", "couple", "fix", etc. can be interpreted in a broad sense. For example, it may be a fixed connection, a removable connection, or an integral one, and may be a mechanical connection, an electrical connection, or a communication connection, and may be a direct connection, an indirect connection through an intermediate medium, the internal communication of two elements, or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present disclosure can be understood according to specific situations.

[0084] In the present disclosure, unless there are specific and clear provisions and limitations, for the first feature to be "above" or "below" the second feature, it can include that the first and second features are in direct contact, and it can also include that the first and second features are not in direct contact but are in contact through additional features therebetween. Further, for the first feature to be "above", "upward", and "higher than" the second feature means that the first feature is directly above and obliquely above the second feature, or simply that the horizontal height of the first feature is higher than the horizontal height of the second feature. For the first feature to be "below", "downward", and "lower than" the second feature means that the first feature is directly below and obliquely below the second feature, or simply that the horizontal height of the first feature is smaller than the horizontal height of the second feature.

[0085] The above disclosure provides many different embodiments or examples for realizing different structures of the present disclosure. For the sake of simplifying the disclosure of the present disclosure, the components and configurations of specific examples are described above. Of course, these are merely examples and not for the purpose of limiting the present disclosure. Further, the present disclosure may repeat reference numerals and / or reference characters in different embodiments, and such repetition is for the sake of simplification and clarity and does not itself indicate the relationships between the various embodiments and / or settings being discussed.

[0086] The above specific embodiments do not limit the protection scope of the present disclosure. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations, substitutions, etc. can be made according to design requirements and other elements. Modifications, equivalent substitutions, improvements, etc. made within the scope of the spirit and principle of the present disclosure shall all be included in the protection scope of the present disclosure.

Claims

1. A chamber body having a wafer stage provided therein, wherein a reaction region for accommodating a wafer is formed on the wafer stage, an upper surface of the reaction region is not lower than an upper surface of the wafer, and holes for transporting plasma into the chamber body are provided on a side wall of the chamber body, the chamber body and, A flow guide pipe provided inside the chamber body, wherein an intake port at one end communicates with the hole, and an exhaust port at the other end for transporting the plasma to an upper surface of the reaction region so as to react the plasma with the upper surface of the wafer extends toward the reaction region, including a pipe body, the flow guide pipe and, The pipe body is a flexible pipe body that can be expanded and contracted, and / or the exhaust port is rotatably connected to the pipe body, A reaction chamber characterized by the above.

2. A lower edge of the exhaust port is located above an upper surface of the reaction region, and an end surface of the exhaust port is located outside an edge of the reaction region, The reaction chamber according to claim 1, characterized by the above.

3. In a height direction of the chamber body, a vertical distance between a lower edge of the exhaust port and an upper surface of the reaction region is 2 mm to 5 mm, In a width direction of the chamber body, a horizontal distance between an end surface of the exhaust port and an outer edge of the reaction region is 2 mm to 5 mm, The reaction chamber according to claim 2, characterized by the above.

4. The reaction chamber according to claim 1, characterized in that a material of the flow guide pipe is a quartz material.

5. A reaction chamber according to any one of claims 1 to 4, and, A plasma source provided outside the reaction chamber, wherein a plasma output port of the plasma source communicates with the hole, the plasma source and, An oxidation device characterized by the above.

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