Extreme ultraviolet light generation system and method for manufacturing an electronic device

Abstract

To provide an extreme ultraviolet light generation system enabling reduction of downtime.SOLUTION: The extreme ultraviolet light generation system comprises: a chamber 2a; a target supply unit 26 supplying a target substance 27 to a plasma generation region 25 including a first point in the chamber; a window 21 allowing pulse laser light with which the target substance is irradiated to pass therethrough; an EUV light condensing mirror 23a reflecting extreme ultraviolet light generated at the first point and condensing the reflected light to second points 292a, 292b; a planar mirror 43 arranged on an optical path of the extreme ultraviolet light reflected by the EUV light condensing mirror and between the first and second points; an actuator 45 changing the posture of the planar mirror and switching the first point; a connection portion 29a configured to allow the extreme ultraviolet light passing through one of the second points to enter an external device; a first EUV measurement unit 60b on which the extreme ultraviolet light passing through the other of the second points is incident; and a processor controlling 5 the actuator on the basis of a signal from the external device.SELECTED DRAWING: Figure 7

Description

Technical Field

[0001] The present disclosure relates to an extreme ultraviolet light generation system and a method for manufacturing an electronic device.

Background Art

[0002] In recent years, with the miniaturization of semiconductor processes, the miniaturization of transfer patterns in optical lithography of semiconductor processes has been rapidly progressing. In the next generation, microfabrication of 10 nm or less will be required. For this reason, the development of an exposure apparatus combining an EUV light generation apparatus that generates extreme ultraviolet (EUV) light with a wavelength of about 13 nm and a reduced projection reflection optics is expected.

[0003] As an EUV light generation apparatus, the development of an LPP (Laser Produced Plasma) type apparatus that uses plasma generated by irradiating a target material with pulsed laser light is in progress.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

[0005] An extreme ultraviolet light generation system according to one aspect of the present disclosure includes a chamber, a target supply unit that supplies a target substance to a plasma generation region including a first point in the chamber, a window that allows pulsed laser light irradiated on the target substance to pass through, an EUV condenser mirror that reflects the extreme ultraviolet light generated at the first point and condenses it onto a second point, a planar mirror provided in the optical path of the extreme ultraviolet light reflected by the EUV condenser mirror between the first and second points, an actuator that changes the posture of the planar mirror to switch the second point between a first position and a second position, a connection unit configured to be connectable to an external device into which the extreme ultraviolet light passing through the first position is incident, a first EUV measurement unit into which the extreme ultraviolet light passing through the second position is incident, and a processor that controls the actuator based on a signal from the external device.

[0006] A method for manufacturing an electronic device according to one aspect of the present disclosure includes generating extreme ultraviolet light by an extreme ultraviolet light generation system including a chamber, a target supply unit that supplies a target substance to a plasma generation region including a first point in the chamber, a window that allows pulsed laser light irradiated on the target substance to pass through, an EUV condenser mirror that reflects the extreme ultraviolet light generated at the first point and condenses it onto a second point, a planar mirror provided in the optical path of the extreme ultraviolet light reflected by the EUV condenser mirror between the first and second points, an actuator that changes the posture of the planar mirror to switch the second point between a first position and a second position, a connection unit configured to be connectable to an external device into which the extreme ultraviolet light passing through the first position is incident, a first EUV measurement unit into which the extreme ultraviolet light passing through the second position is incident, and a processor that controls the actuator based on a signal from the external device, outputting the extreme ultraviolet light to an external device that is an exposure apparatus, and exposing the extreme ultraviolet light onto a photosensitive substrate in the exposure apparatus to manufacture an electronic device.

[0007] A method for manufacturing an electronic device according to one aspect of the present disclosure includes a chamber, a target supply unit that supplies a target substance to a plasma generation region including a first point in the chamber, a window that allows pulsed laser light irradiated on the target substance to pass through, an EUV condenser mirror that reflects extreme ultraviolet light generated at the first point and condenses it on a second point, a flat mirror provided in the optical path of the extreme ultraviolet light reflected by the EUV condenser mirror between the first and second points, an actuator that changes the attitude of the flat mirror to switch the second point between a first position and a second position, a connection unit configured to be connectable to an external device into which the extreme ultraviolet light passing through the first position is incident, a first EUV measurement unit into which the extreme ultraviolet light passing through the second position is incident, and a processor that controls the actuator based on a signal from the external device. The method includes irradiating a mask with extreme ultraviolet light generated by an extreme ultraviolet light generation system including the above components to inspect for defects in the mask, selecting a mask using the inspection results, and exposing and transferring a pattern formed on the selected mask onto a photosensitive substrate.

Brief Description of the Drawings

[0008] Some embodiments of the present disclosure will be described below by way of example only with reference to the accompanying drawings.

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

Figure 15

Figure 16

Figure 17

Figure 18

Figure 19

Figure 20

Figure 21

Figure 22

Figure 23

Figure 24

[0009] <Content> 1. Overall description of EUV light generation system 11 1.1 Configuration 1.2 Operation 2. Comparative example 2.1 Configuration 2.2 Operation 2.3 Problems of the comparative example 3. EUV light generation system 11b that measures EUV light with the first EUV measurement unit 60b 3.1 Configuration 3.2 Operation 3.2.1 Operation of calibrating the first EUV measurement unit 60b 3.2.2 Operation of transmitting EUV light to the external device 6 3.2.3 Operation when an EUV light NG signal is received from the external device 6 3.2.3.1 When the measurement result satisfies the second condition 3.2.3.2 When the measurement result does not satisfy the second condition 3.2.4 Details of the operation of calibrating the first EUV measurement unit 60b 3.3 Function 4. EUV light generation system 11c with improved degree of freedom in the arrangement of the first EUV measurement unit 60b 4.1 Configuration 4.2 Operation 4.3 Function 5. EUV light generation system 11b that can eliminate malfunctions other than alignment 5.1 Configuration and operation 5.2 Function 6. Others

[0010] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The embodiments described below show some examples of the present disclosure and do not limit the content of the present disclosure. Also, not all of the configurations and operations described in each embodiment are essential as the configurations and operations of the present disclosure. The same reference numerals are assigned to the same components, and duplicate descriptions are omitted.

[0011] 1. Overall description of EUV light generation system 11 1.1 Configuration FIG. 1 schematically shows the configuration of an LPP-type EUV light generation system 11. The EUV light generation device 1 is used together with the laser system 3. In the present disclosure, a system including the EUV light generation device 1 and the laser system 3 is referred to as an EUV light generation system 11. The EUV light generation device 1 includes a chamber 2 and a target supply unit 26. The chamber 2 is a sealable container. The target supply unit 26 supplies a target 27 containing a target material into the chamber 2. The material of the target substance may include tin, terbium, gadolinium, lithium, xenon, or any combination of two or more of them.

[0012] The wall of the chamber 2 is provided with through holes. The through holes are blocked by windows 21, and pulsed laser light 32 output from the laser system 3 passes through the windows 21. Inside the chamber 2, an EUV condenser mirror 23 having a reflective surface in the shape of a rotational ellipsoid is disposed. The EUV condenser mirror 23 has first and second foci. A multilayer reflective film in which molybdenum and silicon are alternately laminated is formed on the surface of the EUV condenser mirror 23. The EUV condenser mirror 23 is arranged such that its first focus is located in the plasma generation region 25 and its second focus is located in the intermediate focus point 292. A through hole 24 is provided in the central portion of the EUV condenser mirror 23, and the pulsed laser light 33 passes through the through hole 24. The direction from the first focus to the second focus is defined as the Z direction. The traveling direction of the target 27 perpendicular to the Z direction is defined as the Y direction. The direction perpendicular to both the Y direction and the Z direction is defined as the X direction.

[0013] The EUV light generation device 1 includes a processor 5, a target sensor 4, etc. The processor 5 is a processing device including a memory 501 storing a control program and a CPU (central processing unit) 502 executing the control program. The processor 5 is specially configured or programmed to execute various processes included in the present disclosure. The target sensor 4 detects at least one of the presence, trajectory, position, and speed of the target 27. The target sensor 4 may have an imaging function.

[0014] Also, the EUV light generation device 1 includes a connection part 29 that communicates the inside of the chamber 2 and the inside of the external device 6. Examples of the external device 6 will be described later with reference to FIGS. 23 and 24. Inside the connection part 29, a wall 291 having an aperture formed therein is provided. The wall 291 is arranged such that the aperture is located at the second focal point of the EUV condenser mirror 23.

[0015] Furthermore, the EUV light generation device 1 includes a laser light transmission device 34, a laser light condenser mirror 22, a target recovery part 28 for recovering the target 27, etc. The laser light transmission device 34 includes an optical element for defining the transmission state of the laser light and an actuator for adjusting the position, posture, etc. of this optical element.

[0016] 1.2 Operation Referring to FIG. 1, the operation of the EUV light generation system 11 will be described. The pulsed laser light 31 output from the laser system 3 passes through the laser light transmission device 34, passes through the window 21 as the pulsed laser light 32, and enters the chamber 2. The pulsed laser light 32 travels inside the chamber 2 along the laser light path, is reflected by the laser light condenser mirror 22, and irradiates the target 27 as the pulsed laser light 33.

[0017] The target supply unit 26 outputs the target 27 toward the plasma generation region 25 inside the chamber 2. The target 27 is irradiated with the pulsed laser light 33. The target 27 irradiated with the pulsed laser light 33 is turned into plasma, and the emitted light 251 is emitted from the plasma. The EUV light included in the emitted light 251 is reflected by the EUV condenser mirror 23 with a high reflectance compared to the light in other wavelength ranges. The EUV light 252a reflected by the EUV condenser mirror 23 is condensed at the intermediate focus point 292 and output to the external device 6. Note that a plurality of pulses included in the pulsed laser light 33 may be irradiated onto one target 27.

[0018] The processor 5 controls the entire EUV light generation system 11. The processor 5 processes the detection result of the target sensor 4. Based on the detection result of the target sensor 4, the processor 5 controls the timing at which the target 27 is output, the output direction of the target 27, etc. Further, the processor 5 controls the oscillation timing of the laser system 3, the traveling direction of the pulsed laser light 32, the condensing position of the pulsed laser light 33, etc. The various controls described above are merely examples, and other controls may be added as necessary.

[0019] 2. Comparative Example 2.1 Configuration FIG. 2 schematically shows the configuration of the EUV light generation system 11a according to the comparative example. The comparative example of the present disclosure is a form recognized by the applicant as being known only to the applicant and is not a known example recognized by the applicant. As shown in FIG. 2, the EUV light generation system 11a according to the comparative example includes a chamber 2a instead of the chamber 2 and a connection part 29a instead of the connection part 29. The laser system 3 includes a prepulse laser device PPL and a main pulse laser device MPL.

[0020] The laser light transmission device 34 includes high reflection mirrors 34a and 34c, and a beam combiner 34b. The high reflection mirror 34a is disposed on the optical path of the prepulse laser light output from the prepulse laser device PPL. The beam combiner 34b is disposed at a position where the optical path of the main pulse laser light output from the main pulse laser device MPL overlaps with the optical path of the prepulse laser light reflected by the high reflection mirror 34a. The high reflection mirror 34c is disposed on the common optical path of the main pulse laser light reflected by the beam combiner 34b and the prepulse laser light transmitted through the beam combiner 34b.

[0021] Inside the chamber 2a, a laser light condensing optical system 22a is provided instead of the laser light condensing mirror 22, and an EUV condensing mirror 23a is provided instead of the EUV condensing mirror 23. The EUV condensing mirror 23a is configured to reflect the EUV light generated at the first focal point located in the plasma generation region 25 inside the chamber 2a and condense it at the second point 292a. The first focal point of the EUV condensing mirror 23a corresponds to the first point in the present disclosure.

[0022] Inside the chamber 2a, a plane mirror 43 is further accommodated. The plane mirror 43 is located on the optical path of the EUV light 252a reflected by the EUV condensing mirror 23a and between the first focal point of the EUV condensing mirror 23a and the second point 292a. The plane mirror 43 is supported by a holder 44.

[0023] A multilayer reflection film of molybdenum and silicon is formed on the surface of the EUV condensing mirror 23a, while a reflection film of ruthenium is formed on the surface of the plane mirror 43. FIG. 3 is a graph showing the reflectivity of EUV light by the EUV condenser mirror 23a, and FIG. 4 is a graph showing the reflectivity of EUV light by the planar mirror 43. The horizontal axis of each of FIGS. 3 and 4 indicates the Bragg angle θ. FIG. 5 shows the definition of the Bragg angle θ. The Bragg angle θ in the present disclosure is the angle between the reflecting surface of the mirror and the optical axis of the EUV light. The optical axis means the central axis of the optical path. In both FIGS. 3 and 4, when the Bragg angle θ is close to 0° or in grazing incidence, a high reflectivity is shown, but when the Bragg angle θ increases, the reflectivity rapidly decreases. In FIG. 3, when the Bragg angle θ approaches 90°, a reflectivity of about 70% can be obtained due to interference in the multilayer film.

[0024] Therefore, the EUV condenser mirror 23a is arranged such that the Bragg angle θ of the light radiated from the plasma generation region 25 is 74° or more and 90° or less. The planar mirror 43 is arranged such that the Bragg angle θ of the EUV light 252a reflected by the EUV condenser mirror 23a is greater than 0° and 30° or less. However, the present disclosure is not limited thereto, and a multilayer reflective film of molybdenum and silicon may be formed on the planar mirror 43. In that case, the planar mirror 43 is arranged such that the Bragg angle θ is greater than 0° and 18° or less.

[0025] Referring to FIG. 2 again, a plurality of EUV light detection sensors 41 are attached to the chamber 2a. The EUV light detection sensor 41 is configured to observe the plasma generation region 25 from a plurality of directions and detect the intensity distribution of the EUV light.

[0026] The target supply unit 26 and the EUV condenser mirror 23a are configured to be movable by a moving stage (not shown). Optical elements such as the high-reflection mirror 34c included in the laser light transmission device 34 are configured to be able to control the attitude by an actuator (not shown).

[0027] The chamber 2a is configured to be connectable to the external device 6 via the connection part 29a. Inside the connection part 29a, a gate valve GBa and a wall 291a with an aperture formed therein are provided. The wall 291a is arranged such that its aperture is located at the second point 292a.

[0028] 2.2 Operation The optical paths of the prepulse laser light output from the prepulse laser device PPL and the main pulse laser light output from the main pulse laser device MPL are made to substantially coincide by the beam combiner 34b. The prepulse laser light is irradiated onto the droplet-shaped target 27 to disperse the target 27. The main pulse laser light is irradiated onto the target 27 that has been irradiated with the prepulse laser light and dispersed, to turn the target 27 into plasma. The EUV light 252a among the light radiated from the plasma is reflected by the EUV condenser mirror 23a. The EUV light 252a is reflected by the plane mirror 43 and enters the external device 6 through the second point 292a in the connection part 29a.

[0029] The processor 5 calculates the centroid position of the EUV light generated in the plasma generation region 25 from the intensity distribution of the EUV light detected by the EUV light detection sensor 41, and based on this centroid position, controls the position of the EUV condenser mirror 23a, the position of the target supply unit 26, and the generation timing of the prepulse laser light and the main pulse laser light. The processor 5 controls the attitude of the optical elements included in the laser light transmission device 34 so that the prepulse laser light and the main pulse laser light are irradiated onto the target 27.

[0030] By moving the EUV condenser mirror 23a, the position of the first focus changes. When the target supply unit 26 is moved, the trajectory of the target 27 changes, so the centroid positions of the EUV light generated in the plasma generation region 25 in the X and Z directions change. Further, when the generation timings of the prepulse laser light and the main pulse laser light are changed, the position on the trajectory of the target 27 irradiated by these laser lights changes, so the centroid position of the EUV light generated in the plasma generation region 25 in the Y direction changes.

[0031] The external device 6 is a device that performs exposure of a semiconductor wafer or inspection of a mask using EUV light, and performs exposure or inspection while measuring whether the conditions required for EUV light are satisfied. This condition is a condition determined by the external device 6 and corresponds to the first condition in the present disclosure. The first condition includes, for example, the pulse energy of the EUV light, the centroid position and the spot size of the light intensity distribution of a cross section perpendicular to the optical axis of the EUV light. When the EUV light does not satisfy the first condition, the external device 6 transmits an EUV light NG signal to the processor 5. When the processor 5 receives the EUV light NG signal from the external device 6, the transmission of the EUV light to the external device 6 is stopped.

[0032] 2.3 Problems of Comparative Examples When the EUV light does not satisfy the first condition in the external device 6, it may be necessary to disconnect the EUV light generation system 11a and the external device 6 in order to determine whether the cause is in the EUV light generation system 11a or in the external device 6. Once the EUV light generation system 11a and the external device 6 are disconnected, a process of reconnecting to the external device 6 and restarting the EUV light generation system 11a is required, resulting in a large downtime.

[0033] Further, the EUV light generation system 11a cannot detect a change in the profile of the EUV light 252a at the second point 292a. That is, the presence or absence of an abnormality in the EUV light 252a at the second point 292a cannot be determined unless an EUV light NG signal is received from the external device 6. For this reason, it may be difficult to appropriately control the EUV light generation system 11a.

[0034] In some embodiments described below, by changing the attitude of the flat mirror 43, it is possible to measure the EUV light 252a at the second point 292b using the first EUV measurement unit 60b.

[0035] 3. EUV light generation system 11b that measures EUV light by the first EUV measurement unit 60b 3.1 Configuration FIGS. 6 and 7 schematically show the configuration of the EUV light generation system 11b according to the first embodiment. In addition to the configuration shown in FIG. 2, the EUV light generation system 11b includes a connection part 29b, an actuator 45, a first EUV measurement unit 60b, and a display unit 51.

[0036] The actuator 45 is a rotation stage capable of changing the attitude of the flat mirror 43 supported by the holder 44. The actuator 45 rotates the flat mirror 43 around an axis parallel to the X direction. The X direction is perpendicular to a first virtual plane including the first focal point of the EUV condenser mirror 23a and the second points 292a and 292b. By the actuator 45 changing the attitude of the flat mirror 43, the second point 292a where the EUV light 252a is condensed by the EUV condenser mirror 23a can be moved to the second point 292b at another position. In the present disclosure, the position of the second point 292a is referred to as the first position, and the position of the second point 292b is referred to as the second position. The second points 292a and 292b are in a mirror image relationship with respect to a second virtual plane parallel to the XZ plane and passing through the plasma generation region 25. The first virtual plane including the first focal point of the EUV condenser mirror 23a and the second points 292a and 292b is parallel to the YZ plane, and the optical path of the EUV light 252a from the EUV condenser mirror 23a to the second point 292a and the optical path of the EUV light 252a from the EUV condenser mirror 23a to the second point 292b are located on the first virtual plane.

[0037] The first EUV measurement unit 60b is located in the optical path of the EUV light 252a that has passed through the second point 292b. The first EUV measurement unit 60b includes a fluorescence plate 61b and an image sensor 62b. The fluorescence plate 61b includes a YAG:Ce (cerium-doped yttrium aluminum garnet) crystal that generates visible light in response to EUV light.

[0038] The chamber 2a is connected to the first EUV measurement unit 60b via the connection part 29b. The connection part 29a and the connection part 29b are arranged at positions that are mirror images with respect to the second virtual plane. Inside the connection part 29b, a gate valve GBb and a wall 291b with an aperture formed therein are provided. The wall 291b is arranged such that its aperture is located at the second point 292b.

[0039] The display unit 51 is a device that displays the measurement results and the like of the first EUV measurement unit 60b, and may be an image display device or a display lamp.

[0040] FIG. 8 and FIG. 9 are enlarged views of the planar mirror 43, the holder 44, and the actuator 45 shown in FIGS. 6 and 7, respectively. FIG. 10 shows the planar mirror 43, the holder 44, and the actuator 45 shown in FIG. 8 from another direction. The drive shaft of the actuator 45 is connected to the holder 44 of the planar mirror 43.

[0041] When reflecting the EUV light 252a toward the second point 292a as shown in FIG. 8, the Bragg angle between the planar mirror 43 and the EUV light 252a is set as +θ. When reflecting the EUV light 252a toward the second point 292b as shown in FIG. 9, the Bragg angle between the planar mirror 43 and the EUV light 252a is the same magnitude as in the case of FIG. 8, but since the inclination direction of the planar mirror 43 is different, it is set as -θ. The absolute values of the Bragg angles +θ and -θ are equal, and the reflectance shown in FIG. 4 is the same in the cases of FIG. 8 and FIG. 9. The Bragg angles +θ and -θ are each an example of the first and second Bragg angles in the present disclosure.

[0042] In order to rotate the flat mirror 43 from the posture with the Bragg angle of +θ to the posture with the Bragg angle of -θ, as shown in FIG. 9, a rotation of the angle φ is performed. In this case, the flat mirror 43 rotates while the reflecting surface of the flat mirror 43 remains located on the optical path of the EUV light 252a.

[0043] FIG. 11 shows a configuration for calibrating the first EUV measurement unit 60b in the first embodiment. Before connecting the external device 6 to the connection part 29a, in order to calibrate the first EUV measurement unit 60b, the second EUV measurement unit 60a can be connected to the connection part 29a. Alternatively, the external device 6 may be removed from the connection part 29a and the second EUV measurement unit 60a may be connected. The second EUV measurement unit 60a includes a fluorescent plate 61a and an image sensor 62a. These configurations may be the same as those included in the first EUV measurement unit 60b.

[0044] 3.2 Operations FIGS. 12 and 13 are flowcharts showing the operations of the processor 5 in the first embodiment. The processes shown in FIGS. 12 and 13 include an operation of calibrating the first EUV measurement unit 60b, an operation of transmitting EUV light to the external device 6, and an operation when an EUV light NG signal is received from the external device 6.

[0045] 3.2.1 Operation of Calibrating the First EUV Measurement Unit 60b First, with the external device 6 not connected to the connection part 29a, the second EUV measurement unit 60a is connected to the connection part 29a as shown in FIG. 11.

[0046] Thereafter, in S10, the processor 5 performs alignment adjustment of the EUV light generation system 11b. Specifically, the following control is performed. The Bragg angle between the flat mirror 43 and the EUV light 252a is set to +θ (see FIG. 8). The generation of EUV light is started, and the gate valve GBa is opened. Alignment adjustment is performed so that the EUV light measured by the second EUV measurement unit 60a satisfies predetermined conditions. This alignment adjustment includes alignment adjustment of the EUV condenser mirror 23a, the flat mirror 43, the target supply unit 26, the prepulse laser device PPL, the main pulse laser device MPL, and the laser light transmission device 34. The alignment adjustment further includes adjustment of the generation timings of the prepulse laser light and the main pulse laser light. The predetermined conditions that the EUV light should satisfy include, for example, the pulse energy of the EUV light, the centroid position of the light intensity distribution measured in the second EUV measurement unit 60a, and the spot size of a cross section perpendicular to the optical axis of the EUV light. Thereafter, the gate valve GBa is closed to terminate the generation of EUV light.

[0047] In S15, the processor 5 calibrates the first EUV measurement unit 60b. Details of this process will be described later with reference to FIGS. 14 and 15. Note that when the second EUV measurement unit 60a that measured the EUV light in S10 is removed and connected to the connection part 29b and used as the first EUV measurement unit 60b, the process of S15 may not be performed.

[0048] 3.2.2 Operation of Transmitting EUV Light to the External Device 6 After S15, the second EUV measurement unit 60a is removed from the connection part 29a, and the external device 6 is connected to the connection part 29a as shown in FIG. 6. Thereafter, in S30, the processor 5 controls the EUV light generation system 11b to start generating EUV light.

[0049] In S35, the processor 5 opens the gate valve GBa to start transmitting the EUV light to the external device 6. At this time, the Bragg angle between the flat mirror 43 and the EUV light 252a is +θ.

[0050] In S40, the processor 5 determines whether it has received an EUV light NG signal from the external device 6. The EUV light NG signal is a signal output from the external device 6 when the external device 6 determines that the measurement result of the EUV light does not satisfy the first condition.

[0051] If the EUV light NG signal has not been received (S40: NO), the processor 5 proceeds to S41. In S41, the processor 5 determines whether to continue transmitting the EUV light to the external device 6. If it is determined to continue transmitting the EUV light to the external device 6 (S41: YES), the processor 5 returns the process to S40. If it is determined not to continue transmitting the EUV light to the external device 6 (S41: NO), the processor 5 proceeds to S90. In S90, the processor 5 closes the gate valve GBa to end the generation of the EUV light. After S90, the processor 5 ends the processing of this flowchart.

[0052] 3.2.3 Operations When the EUV Light NG Signal is Received from the External Device 6 If the EUV light NG signal has been received (S40: YES), the processor 5 proceeds to S45. In S45, the processor 5 stops transmitting the EUV light to the external device 6 by closing the gate valve GBa. In S50, the processor 5 reflects the EUV light 252a toward the second point 292b with the Bragg angle between the planar mirror 43 and the EUV light 252a being -θ, and starts transmitting the EUV light to the first EUV measurement unit 60b by opening the gate valve GBb.

[0053] Referring to FIG. 13, in S55, it is determined whether the measurement result of the EUV light by the first EUV measurement unit 60b satisfies the second condition. The second condition may be a condition equivalent to the first condition, or may include a more stringent condition in addition to satisfying the first condition. Depending on the determination result of S55, the process branches to the following S56 and S57.

[0054] 3.2.3.1 When the measurement result satisfies the second condition When the measurement result of the EUV light by the first EUV measurement unit 60b satisfies the second condition (S55: YES), the processor 5 proceeds to S56 for processing.

[0055] In S56, the processor 5 notifies the external device 6 that there is a problem with the external device 6 and causes the display unit 51 to display the determination result. This is because when the measurement result satisfies the second condition, there is no problem with the EUV light generation system 11b. In this case, the external device 6 is adjusted.

[0056] In S85, the processor 5 waits until the transmission of EUV light is requested from the external device 6. If the waiting time is short, it is not necessary to end the generation of EUV light. However, the gate valve GBa is kept closed so as not to output to the external device 6. The Bragg angle between the flat mirror 43 and the EUV light 252a may be +θ. When the transmission of EUV light is requested from the external device 6 (S85: YES), the processor 5 returns the process to S35 in FIG. 12.

[0057] 3.2.3.2 When the measurement result does not satisfy the second condition When the measurement result of the EUV light by the first EUV measurement unit 60b does not satisfy the second condition (S55: NO), the processor 5 proceeds to S57 for processing.

[0058] In S57, the processor 5 notifies the external device 6 that there is a problem with the EUV light generation system 11b and causes the display unit 51 to display the determination result.

[0059] In S58, the processor 5 performs alignment adjustment of the plasma generation region 25. The alignment adjustment of the plasma generation region 25 includes position adjustment of the target supply unit 26 and adjustment of the generation timings of the prepulse laser light and the main pulse laser light. Along with the alignment adjustment of the plasma generation region 25, alignment adjustment of the EUV condenser mirror 23a may be performed. During the alignment adjustment of the plasma generation region 25, generation of EUV light is not terminated, but the gate valve GBa is kept closed.

[0060] After S58, the processor 5 sets the Bragg angle between the flat mirror 43 and the EUV light 252a to +θ, and returns the process to S35 in FIG. 12.

[0061] 3.2.4 Details of the operation of calibrating the first EUV measurement unit 60b FIG. 14 is a flowchart showing details of the operation of calibrating the first EUV measurement unit 60b in the first embodiment. The process shown in FIG. 14 corresponds to the subroutine of S15 in FIG. 12.

[0062] In S150, the processor 5 controls the EUV light generation system 11b to start generation of EUV light. In S152, the processor 5 sets the Bragg angle between the flat mirror 43 and the EUV light 252a to -θ. In S153, the processor 5 opens the gate valve GBb and causes the first EUV measurement unit 60b to measure the EUV light. Thereafter, the processor 5 closes the gate valve GBb.

[0063] In S154, the processor 5 sets the Bragg angle between the flat mirror 43 and the EUV light 252a to +θ. At this time, the gate valve GBa may be opened to cause the second EUV measurement unit 60a to measure the EUV light, but it is not necessary to perform the measurement by the second EUV measurement unit 60a again if the result measured in S10 in FIG. 12 can be used.

[0064] In S155, the processor 5 generates calibration data from the measurement results of the first and second EUV measurement units 60b and 60a. FIG. 15 is a graph showing an example of a calibration curve included in the calibration data. In FIG. 15, the horizontal axis represents the repetition frequency, and the vertical axis represents the pulse energy of EUV light. The horizontal axis is not limited to the repetition frequency, and may be the gas pressure in the chamber 2a, or the light intensity of the prepulse laser light or the main pulse laser light. The first and second EUV measurement units 60b and 60a receive the EUV light 252a reflected with the same reflectivity by the plane mirror 43. However, the measurement results of the first and second EUV measurement units 60b and 60a may differ due to the characteristic differences between the first and second EUV measurement units 60b and 60a. If the calibration curve is linear, a value independent of the characteristic differences between the first and second EUV measurement units 60b and 60a can be calculated by multiplying the measured value by the correction coefficient by the first EUV measurement unit 60b. Such a correction coefficient is also included in the calibration data generated by the processor 5.

[0065] Referring again to FIG. 14, in S156, the processor 5 determines whether the calibration curve is linear.

[0066] If the calibration curve is not linear (S156: NO), the processor 5 proceeds to S157. In S157, the processor 5 adjusts the optical path of the EUV light 252a by adjusting the position of the EUV condenser mirror 23a or other optical elements. As a cause of the calibration curve not being linear, for example, it is conceivable that the EUV light 252a passes through a position deviated from the center of the aperture of the wall 291b. By adjusting the optical path of the EUV light 252a, the calibration curve may be improved. After S157, the processor 5 returns the process to S152.

[0067] If the calibration curve is linear (S156: YES), the processor 5 proceeds to S158. In S158, the processor 5 causes the display unit 51 to display the completion of calibration of the first EUV measurement unit 60b. In S159, the processor 5 ends the generation of EUV light. After S159, the processor 5 ends the processing of this flowchart and returns to the processing shown in FIG. 12.

[0068] 3.3 Operation (1) According to the first embodiment, the EUV light generation system 11b includes a chamber 2a, a target supply unit 26, a window 21, an EUV condenser mirror 23a, a flat mirror 43, an actuator 45, a connection unit 29a, a first EUV measurement unit 60b, and a processor 5. The target supply unit 26 supplies a target 27 to a plasma generation region 25 including the first focal point of the EUV condenser mirror 23a. The window 21 allows the pulsed laser light irradiated on the target 27 to pass through. The EUV condenser mirror 23a reflects the EUV light generated at the first focal point and condenses it at a second point 292a or 292b. The flat mirror 43 is provided in the optical path of the EUV light 252a reflected by the EUV condenser mirror 23a between the first focal point and the second point 292a or 292b. The actuator 45 changes the posture of the flat mirror 43 to switch between the second points 292a and 292b. The connection unit 29a is configured to be connectable to an external device 6 into which the EUV light 252a passing through the second point 292a is incident. The first EUV measurement unit 60b receives the EUV light 252a passing through the second point 292b. The processor 5 controls the actuator 45 based on a signal from the external device 6. According to this, by switching between the second points 292a and 292b by the actuator 45 and measuring the EUV light 252a passing through the second point 292b with the first EUV measurement unit 60b, it is possible to determine whether there is a problem in the EUV light generation system 11b. Therefore, it is possible to reduce the downtime during which the external device 6 cannot be used. The signal from the external device 6 is not limited to the EUV light NG signal. Even when the measurement result in the external device 6 satisfies the first condition, for example, when a signal permitting the suspension of the transmission of EUV light 252a is received from the external device 6, the EUV light generation system 11b can perform measurement by the first EUV measurement unit 60b. When the measurement result does not satisfy the second condition, the processes of S57 and S58 in FIG. 13 may be performed.

[0069] (2) According to the first embodiment, the actuator 45 changes the posture of the flat mirror 43 so that the flat mirror 43 rotates around an X-axis perpendicular to a first virtual plane including the first focal point of the EUV condenser mirror 23a and the second points 292a and 292b. According to this, the alignment of the flat mirror 43 can be accurately performed without requiring a complicated mechanism for changing the posture of the flat mirror 43. However, the present disclosure is not limited to this. It is only necessary to be able to change the posture of the flat mirror 43 to switch the second points 292a and 292b, and the flat mirror 43 may be rotated around an axis in another direction.

[0070] (3) According to the first embodiment, the optical path of the EUV light 252a from the EUV condenser mirror 23a to the second point 292a or 292b is located on a first virtual plane including the first focal point of the EUV condenser mirror 23a and the second points 292a and 292b. According to this, since the optical path of the EUV light 252a is switched within the same plane, the alignment of the first focal point, the second points 292a and 292b, and the flat mirror 43 can be easily performed.

[0071] (4) According to the first embodiment, the absolute value of the Bragg angle +θ between the reflecting surface of the planar mirror 43 and the optical axis of the EUV light 252a when the EUV light 252a is directed toward the second point 292a is equal to the absolute value of the Bragg angle -θ between the reflecting surface and the optical axis when the EUV light 252a is directed toward the second point 292b. According to this, the beam profiles at the second points 292a and 292b are the same when the EUV light 252a is directed toward the second point 292a and when the EUV light 252a is directed toward the second point 292b. For this reason, the same beam profile as the EUV light 252a incident on the external device 6 can be measured by the first EUV measurement unit 60b.

[0072] (5) According to the first embodiment, the planar mirror 43 has a reflecting surface having a reflective film, and the actuator 45 changes the posture of the planar mirror 43 so that the planar mirror 43 rotates while the reflecting surface is located in the optical path of the EUV light 252a. According to this, the possibility that the EUV light 252a enters the holder 44 on the back side of the planar mirror 43 can be reduced. However, the present disclosure is not limited to this. The holder 44 may be located in the optical path of the EUV light 252a even during the rotation of the planar mirror 43.

[0073] (6) According to the first embodiment, the connection portion 29a is configured to be connectable to the second EUV measurement unit 60a instead of the external device 6. The processor 5 performs alignment adjustment of either the EUV condenser mirror 23a or the planar mirror 43 based on the result measured by the second EUV measurement unit 60a with the EUV light 252a directed toward the second point 292a. According to this, alignment adjustment can be accurately performed using the EUV light 252a that has passed through the same optical path as the light incident on the external device 6. However, the present disclosure is not limited to this. Alignment adjustment may be performed according to the result of test exposure or inspection in the external device 6.

[0074] (7) According to the first embodiment, the connection portion 29a is configured to be connectable to the second EUV measurement unit 60a instead of the external device 6. The processor 5 generates calibration data for the first EUV measurement unit 60b based on the result of measuring the EUV light 252a directed at the second point 292a by the second EUV measurement unit 60a and the result of measuring the EUV light 252a directed at the second point 292b by the first EUV measurement unit 60b. According to this, the characteristic difference of the EUV measurement unit can be corrected so that accurate measurement can be performed.

[0075] (8) According to the first embodiment, the signal from the external device 6 includes an EUV light NG signal indicating that the measurement result of the EUV light 252a in the external device 6 does not satisfy the first condition. When the EUV light NG signal is output from the external device 6, the processor 5 controls the actuator 45 to direct the EUV light 252a toward the second point 292b. According to this, the cause of not satisfying the first condition in the external device 6 can be determined using the measurement result of the first EUV measurement unit 60b.

[0076] (9) According to the first embodiment, when the measurement result by the first EUV measurement unit 60b does not satisfy the second condition, the processor 5 performs alignment adjustment of the plasma generation region 25. According to this, not only can the problem location be specified while the EUV light generation system 11b is connected to the external device 6, but also the problem can be solved while the EUV light generation system 11b is connected to the external device 6.

[0077] (10) According to the first embodiment, the alignment adjustment of the plasma generation region 25 includes position adjustment of the target supply unit 26. According to this, the centroid positions of the EUV light generated in the plasma generation region 25 in the X direction and the Z direction can be changed.

[0078] (11) According to the first embodiment, the EUV light generation system 11b further includes a laser system 3 that outputs pulsed laser light. The alignment adjustment of the plasma generation region 25 includes either the position adjustment of the target supply unit 26 or the generation timing adjustment of the pulsed laser light. According to this, not only can the centroid positions of the EUV light generated in the plasma generation region 25 in the X and Z directions be changed, but also the centroid position in the Y direction can be changed.

[0079] (12) According to the first embodiment, when the measurement result by the first EUV measurement unit 60b satisfies the second condition, the processor 5 waits in a state where the output of the EUV light 252a to the external device 6 is stopped. According to this, since it is possible to concentrate on the adjustment of the external device 6, the downtime can be reduced. In other respects, the first embodiment is the same as the comparative example.

[0080] 4. EUV light generation system 11c with improved degree of freedom in the arrangement of the first EUV measurement unit 60b 4.1 Configuration FIGS. 16 and 17 schematically show the configuration of the EUV light generation system 11c according to the second embodiment. The EUV light generation system 11c is different from the first embodiment in the second position of the second point 292b, the arrangement of the connection portion 29b, and the arrangement of the first EUV measurement unit 60b.

[0081] In the second embodiment, the second points 292a and 292b are not in a mirror image relationship with respect to a second virtual plane parallel to the XZ plane and passing through the plasma generation region 25. The connection portions 29a and 29b are not in positions that are mirror images with respect to the second virtual plane. The planar mirror 43 reflects the EUV light 252a in an asymmetric direction toward the second points 292a and 292b.

[0082] Figures 18 and 19 are enlarged views of the planar mirror 43, the holder 44, and the actuator 45 shown in FIGS. 16 and 17, respectively. When reflecting the EUV light 252a toward the second point 292a as shown in FIG. 18, the Bragg angle between the planar mirror 43 and the EUV light 252a is defined as θ1. When reflecting the EUV light 252a toward the second point 292b as shown in FIG. 19, the Bragg angle between the planar mirror 43 and the EUV light 252a is larger than that in the case of FIG. 18 and is defined as θ2. The absolute values of the Bragg angles θ1 and θ2 are different, and the reflectance shown in FIG. 4 is lower in the case of FIG. 19 than in the case of FIG. 18. The Bragg angles θ1 and θ2 are examples of the first and second Bragg angles in the present disclosure, respectively.

[0083] In order to rotate the planar mirror 43 from the posture with the Bragg angle θ1 to the posture with the Bragg angle θ2, a rotation of the angle φ is performed as shown in FIG. 19.

[0084] 4.2 Operation The processes shown in FIGS. 12 and 13 are also executed in the second embodiment. However, the calibration of the first EUV measurement unit 60b is partly different from that in the first embodiment.

[0085] FIG. 20 is a flowchart showing details of the operation of calibrating the first EUV measurement unit 60b in the second embodiment. The process shown in FIG. 20 corresponds to the subroutine of S15 in FIG. 12.

[0086] In the second embodiment, instead of setting the Bragg angle between the planar mirror 43 and the EUV light 252a to -θ, it is set to θ2 (S152c), so that the EUV light 252a is reflected toward the second point 292b. Also, instead of setting the Bragg angle between the planar mirror 43 and the EUV light 252a to +θ, it is set to θ1 (S154c), so that the EUV light 252a is reflected toward the second point 292a.

[0087] Since the Bragg angle θ2 is larger than the Bragg angle θ1, the reflectivity when the EUV light 252a is reflected toward the second point 292b is low. The measured value of the pulse energy by the first EUV measurement unit 60b is smaller than the measured value of the pulse energy by the second EUV measurement unit 60a when the second EUV measurement unit 60a is connected to the connection part 29a. By multiplying the measured value by the first EUV measurement unit 60b by a correction coefficient greater than 1, the change in reflectivity due to the change in the Bragg angle can be offset.

[0088] 4.3 Operation (13) According to the second embodiment, the absolute value of the Bragg angle θ2 between the reflecting surface of the planar mirror 43 and the optical axis of the EUV light 252a when the EUV light 252a is directed toward the second point 292b is larger than the absolute value of the Bragg angle θ1 between the reflecting surface and the optical axis of the EUV light 252a when the EUV light 252a is directed toward the second point 292a. According to this, the degree of freedom in arranging the first EUV measurement unit 60b is improved, and the first EUV measurement unit 60b can be arranged at a location with a margin in the installation space or at a location where attachment and detachment are easy.

[0089] (14) According to the second embodiment, the processor 5 calculates the pulse energy of the EUV light 252a incident on the external device 6 by multiplying the pulse energy of the EUV light 252a obtained by the first EUV measurement unit 60b by a correction coefficient greater than 1. According to this, the difference in reflectivity due to the difference between the Bragg angles θ1 and θ2 can be offset to calculate the pulse energy of the EUV light 252a. In other respects, the second embodiment is the same as the first embodiment.

[0090] 5. EUV light generation system 11b that can eliminate malfunctions other than alignment 5.1 Configuration and operation The third embodiment will be described below. The configuration of the third embodiment is the same as that of the first embodiment. FIG. 21 and FIG. 22 are flowcharts showing the operation of the processor 5 in the third embodiment. When the mirror is replaced in FIG. 22 (S84: YES), the processing shown in FIG. 21 is the same as the processing shown in FIG. 12, except that the process returns to S10 in FIG. 21.

[0091] The processing shown in FIG. 22 is the same as the processing shown in FIG. 13, except that the processing from S59 to S84 is added.

[0092] In S59, the processor 5 determines whether or not the measurement result of the EUV light by the first EUV measurement unit 60b satisfies the second condition by the alignment adjustment in S58. The second condition is the same as the second condition determined in S55.

[0093] When the measurement result of the EUV light by the first EUV measurement unit 60b satisfies the second condition by the alignment adjustment (S59: YES), the processor 5 sets the Bragg angle between the flat mirror 43 and the EUV light 252a to +θ, and returns the process to S35 in FIG. 21.

[0094] When the measurement result of the EUV light by the first EUV measurement unit 60b does not satisfy the second condition even after the alignment adjustment (S59: NO), the processor 5 advances the process to S70. In S70, the processor 5 identifies the location that requires maintenance. For example, when the centroid position or spot size of the EUV light does not normalize, it can be determined that the position of the EUV condenser mirror 23a is abnormal. Alternatively, when the pulse energy of the EUV light does not normalize, it can be determined that the EUV condenser mirror 23a or the flat mirror 43 has deteriorated. Based on this determination result, the location that requires maintenance is identified.

[0095] In S75, the processor 5 notifies the external device 6 to start maintenance. In S82, maintenance is performed. Maintenance involving replacement of the EUV condenser mirror 23a or the flat mirror 43 is performed with the EUV light generation stopped. Maintenance not involving replacement, such as adjustment of the position of the EUV condenser mirror 23a or the flat mirror 43, can be performed without stopping the EUV light generation.

[0096] After the maintenance is completed, in S84, the processor 5 determines whether the mirror has been replaced. The mirror here refers to either the EUV condenser mirror 23a or the flat mirror 43. If the mirror has been replaced (S84: YES), the processor 5 returns the process to S10 in FIG. 21. Thereby, alignment adjustment of the EUV condenser mirror 23a and the flat mirror 43 is performed. If the mirror has not been replaced (S84: NO), for example, when adjusting the position of the EUV condenser mirror 23a or the flat mirror 43, or when replacing the EUV light detection sensor 41, the processor 5 proceeds to S85.

[0097] The process of S85 is the same as that shown in FIG. 13, and the processor 5 waits until transmission of EUV light is requested from the external device 6. When transmission of EUV light is requested from the external device 6 (S85: YES), the processor 5 returns the process to S35 in FIG. 21.

[0098] 5.2 Operation (15) According to the third embodiment, when the measurement result by the first EUV measurement unit 60b does not satisfy the second condition, the processor 5 adjusts the position of the target supply unit 26. When the measurement result by the first EUV measurement unit 60b still does not satisfy the second condition even after the position adjustment, the processor 5 stops the generation of the EUV light 252a for maintenance of the EUV light generation system 11b. According to this, when there is a problem other than alignment in the EUV light generation system 11b, the problem can be solved without disconnecting the external device 6, so the downtime can be reduced.

[0099] (16) According to the third embodiment, when performing maintenance on the EUV light generation system 11b, the processor 5 notifies the external device 6 that maintenance is to be performed. According to this, it is possible to notify the external device 6 that it takes time to resolve the problem, and resource consumption in the external device 6 can be reduced.

[0100] (17) According to the third embodiment, the maintenance includes replacing either the EUV condenser mirror 23a or the flat mirror 43. According to this, when the problem is resolved by replacing the mirror, the problem can be resolved without disconnecting the external device 6, so the downtime can be reduced.

[0101] (18) According to the third embodiment, the connection portion 29a is configured to be connectable to the second EUV measurement unit 60a instead of the external device 6. When either the EUV condenser mirror 23a or the flat mirror 43 is replaced, alignment adjustment of either the EUV condenser mirror 23a or the flat mirror 43 is performed based on the result of measurement by the second EUV measurement unit 60a with the EUV light 252a directed toward the second point 292a. According to this, when alignment adjustment is required due to replacement of the mirror, the work can be performed without disconnecting the external device 6.

[0102] In other respects, the third embodiment is the same as the first embodiment. Alternatively, in the third embodiment, similar to the second embodiment, the flat mirror 43 may reflect the EUV light 252a in an asymmetric direction.

[0103] 6. Others FIG. 23 schematically shows the configuration of the exposure apparatus 6a connected to the EUV light generation system 11b. In FIG. 23, an exposure apparatus 6a as an external device 6 (see FIG. 1) includes a mask irradiation unit 608 and a workpiece irradiation unit 609. The mask irradiation unit 608 illuminates the mask pattern on the mask table MT through a reflection optical system with EUV light incident from the EUV light generation system 11b. The workpiece irradiation unit 609 forms an image of the EUV light reflected by the mask table MT on a workpiece (not shown) disposed on the workpiece table WT through a reflection optical system. The workpiece is a photosensitive substrate such as a semiconductor wafer coated with photoresist. The exposure apparatus 6a exposes the workpiece to EUV light reflecting the mask pattern by synchronously translating the mask table MT and the workpiece table WT. An electronic device can be manufactured by transferring a device pattern to a semiconductor wafer through the exposure process as described above.

[0104] FIG. 24 schematically shows the configuration of an inspection apparatus 6b connected to the EUV light generation system 11b. In FIG. 24, an inspection apparatus 6b as an external device 6 (see FIG. 1) includes an illumination optical system 603 and a detection optical system 606. The illumination optical system 603 reflects the EUV light incident from the EUV light generation system 11b and irradiates a mask 605 disposed on a mask stage 604. The mask 605 here includes a mask blank before a pattern is formed. The detection optical system 606 reflects the EUV light from the illuminated mask 605 and forms an image on the light receiving surface of a detector 607. The detector 607 that has received the EUV light acquires an image of the mask 605. The detector 607 is, for example, a TDI (time delay integration) sensor or a CCD camera. Defects of the mask 605 are inspected based on the image of the mask 605 obtained through the process as described above, and a mask suitable for manufacturing an electronic device is selected using the inspection result. Then, an electronic device can be manufactured by exposing and transferring the pattern formed on the selected mask onto a photosensitive substrate using the exposure apparatus 6a.

[0105] In FIGS. 23 and 24, an EUV light generation system 11c may be used instead of the EUV light generation system 11b.

[0106] The above description is intended to be illustrative only and not restrictive. Thus, it will be apparent to those skilled in the art that changes may be made to the embodiments of the disclosure without departing from the scope of the claims. It will also be apparent to those skilled in the art that the embodiments of the disclosure may be used in combination.

[0107] The terms used throughout this specification and the claims are to be construed as “non-limiting” terms unless otherwise specified. For example, the terms “comprising” or “comprised of” are to be construed as not being limited to only those things described as being included. The term “having” is to be construed as not being limited to only those things described as being had. Also, the indefinite article “a” is to be construed as meaning “at least one” or “one or more”. Also, the term “at least one of A, B, and C” is to be construed as “A”, “B”, “C”, “A + B”, “A + C”, “B + C”, or “A + B + C”. Furthermore, it is to be construed as including combinations with things other than “A”, “B”, and “C”.

Claims

1. A chamber, a target supply unit that supplies a target substance to a plasma generation region including a first point in the chamber, a window through which pulsed laser light irradiated on the target substance passes, an EUV condenser mirror that reflects extreme ultraviolet light generated at the first point and condenses it to a second point, a plane mirror provided between the first and second points in the optical path of the extreme ultraviolet light reflected by the EUV condenser mirror, an actuator that changes the attitude of the plane mirror to switch the second point between a first position and a second position, a connection part configured to be connectable to an external device into which the extreme ultraviolet light passing through the first position enters, a first EUV measurement unit into which the extreme ultraviolet light passing through the second position enters, a processor that controls the actuator based on a signal from the external device, An extreme ultraviolet light generation system comprising the above.

2. The extreme ultraviolet light generation system according to Claim 1, wherein the actuator changes the attitude of the plane mirror such that the plane mirror rotates around an axis perpendicular to a virtual plane including the first point, the first position, and the second position. An extreme ultraviolet light generation system.

3. The extreme ultraviolet light generation system according to Claim 1, wherein the optical path of the extreme ultraviolet light from the EUV condenser mirror to the second point is located on a virtual plane including the first point, the first position, and the second position. An extreme ultraviolet light generation system.

4. The extreme ultraviolet light generation system according to Claim 1, wherein the absolute value of a first Bragg angle between the reflecting surface of the plane mirror and the optical axis of the extreme ultraviolet light when the second point is the first position is equal to the absolute value of a second Bragg angle between the reflecting surface and the optical axis when the second point is the second position. An extreme ultraviolet light generation system.

5. The extreme ultraviolet light generation system according to Claim 1, wherein the plane mirror has a reflecting surface having a reflective film, and the actuator changes the attitude of the plane mirror such that the plane mirror rotates while the reflecting surface is located in the optical path of the extreme ultraviolet light. An extreme ultraviolet light generation system.

6. The extreme ultraviolet light generation system according to Claim 1, wherein the connection part is configured to be connectable to a second EUV measurement unit instead of the external device. Based on the result of measuring the extreme ultraviolet light by the second EUV measurement unit with the second point as the first position, the processor performs alignment adjustment of either the EUV condenser mirror or the flat mirror. Extreme ultraviolet light generation system.

7. The extreme ultraviolet light generation system according to claim 1, The connection part is configured to be connectable to a second EUV measurement unit instead of the external device, Based on the result of measuring the extreme ultraviolet light by the second EUV measurement unit with the second point as the first position and the result of measuring the extreme ultraviolet light by the first EUV measurement unit with the second point as the second position, the processor generates calibration data for the first EUV measurement unit. Extreme ultraviolet light generation system.

8. The extreme ultraviolet light generation system according to claim 1, The signal includes an EUV light NG signal indicating that the measurement result of the extreme ultraviolet light in the external device does not satisfy a first condition, When the EUV light NG signal is output from the external device, the processor controls the actuator to set the second point to the second position. Extreme ultraviolet light generation system.

9. The extreme ultraviolet light generation system according to claim 1, When the measurement result by the first EUV measurement unit does not satisfy a second condition, the processor performs alignment adjustment of the plasma generation region. Extreme ultraviolet light generation system.

10. The extreme ultraviolet light generation system according to claim 9, The alignment adjustment includes position adjustment of the target supply unit. Extreme ultraviolet light generation system.

11. The extreme ultraviolet light generation system according to claim 9, Further includes a laser system that outputs the pulsed laser light, The alignment adjustment includes either position adjustment of the target supply unit or adjustment of the generation timing of the pulsed laser light. Extreme ultraviolet light generation system.

12. The extreme ultraviolet light generation system according to claim 9, When the measurement result by the first EUV measurement unit satisfies the second condition, the processor waits in a state where the output of the extreme ultraviolet light to the external device is stopped. Extreme ultraviolet light generation system.

13. The extreme ultraviolet light generation system according to claim 1, The absolute value of the second Bragg angle between the reflecting surface of the planar mirror and the optical axis of the extreme ultraviolet light is larger than the absolute value of the first Bragg angle between the reflecting surface of the planar mirror and the optical axis of the extreme ultraviolet light when the second point is at the first position, when the second point is at the second position. Extreme ultraviolet light generation system.

14. The extreme ultraviolet light generation system according to claim 13, The processor calculates the pulse energy of the extreme ultraviolet light incident on the external device by multiplying the pulse energy of the extreme ultraviolet light obtained by the first EUV measurement unit by a correction factor. Extreme ultraviolet light generation system.

15. The extreme ultraviolet light generation system according to claim 1, The processor, When the measurement result by the first EUV measurement unit does not satisfy the second condition, the position of the target supply unit is adjusted. When the measurement result by the first EUV measurement unit still does not satisfy the second condition even after the position adjustment, the generation of the extreme ultraviolet light is stopped for maintenance of the extreme ultraviolet light generation system. Extreme ultraviolet light generation system.

16. The extreme ultraviolet light generation system according to claim 15, When performing the maintenance, the processor notifies the external device of performing the maintenance. Extreme ultraviolet light generation system.

17. The extreme ultraviolet light generation system according to claim 15, The maintenance includes replacement of either the EUV condenser mirror or the planar mirror. Extreme ultraviolet light generation system.

18. The extreme ultraviolet light generation system according to claim 17, The connection part is configured to be connectable to a second EUV measurement unit instead of the external device. When either the EUV condenser mirror or the planar mirror is replaced, alignment adjustment of either the EUV condenser mirror or the planar mirror is performed based on the result of measuring the extreme ultraviolet light by the second EUV measurement unit with the second point at the first position. Extreme ultraviolet light generation system.

19. A method for manufacturing an electronic device, A chamber, A target supply unit that supplies a target substance to a plasma generation region including a first point in the chamber, A window that allows pulsed laser light irradiated on the target substance to pass through, An EUV condenser mirror that reflects the extreme ultraviolet light generated at the first point and condenses it at a second point. A flat mirror provided in the optical path of the extreme ultraviolet light reflected by the EUV condenser mirror between the first and second points; An actuator that changes the attitude of the flat mirror to switch the second point between a first position and a second position; A connection part configured to be connectable to an external device into which the extreme ultraviolet light passing through the first position is incident; A first EUV measurement unit into which the extreme ultraviolet light passing through the second position is incident; A processor that controls the actuator based on a signal from the external device; Generate the extreme ultraviolet light by an extreme ultraviolet light generation system including; Output the extreme ultraviolet light to the external device which is an exposure apparatus; Expose the extreme ultraviolet light on a photosensitive substrate in the exposure apparatus in order to manufacture an electronic device A method for manufacturing an electronic device, including the above.

20. A method for manufacturing an electronic device, comprising: A chamber; A target supply unit that supplies a target substance to a plasma generation region including a first point in the chamber; A window that allows pulsed laser light irradiated on the target substance to pass through; An EUV condenser mirror that reflects the extreme ultraviolet light generated at the first point and condenses it to a second point; A flat mirror provided in the optical path of the extreme ultraviolet light reflected by the EUV condenser mirror between the first and second points; An actuator that changes the attitude of the flat mirror to switch the second point between a first position and a second position; A connection part configured to be connectable to an external device into which the extreme ultraviolet light passing through the first position is incident; A first EUV measurement unit into which the extreme ultraviolet light passing through the second position is incident; A processor that controls the actuator based on a signal from the external device; Irradiate the extreme ultraviolet light generated by an extreme ultraviolet light generation system including with a mask to inspect for defects in the mask; Select a mask using the results of the inspection; Exposure-transfer the pattern formed on the selected mask onto a photosensitive substrate A method for manufacturing an electronic device, including the above.

Images