Organic Light-Emitting Display Device and Method for Manufacturing the Same

Abstract

To provide an organic light-emitting display device in which the occurrence of a defect can be prevented, and a manufacturing method thereof.SOLUTION: An organic light-emitting display device in one embodiment includes a first inorganic insulating layer disposed on a substrate including a display region and a pad region, a first gate electrode of a first transistor existing in the display region and a first pad electrode existing in the pad region, which are disposed on the first inorganic insulating layer, a second inorganic insulating layer covering the first gate electrode and the first pad electrode and having an opening for exposing at least a part of the first pad electrode, an organic insulating layer disposed on the second inorganic insulating layer in the display region, a light-emitting element disposed on the organic insulating layer, a sealing layer covering the light-emitting element, a touch sensor layer disposed on the sealing layer, a second pad electrode disposed on the second inorganic insulating layer in the pad region and connected to the first pad electrode through the opening, and a display pad including the first pad electrode and the second pad electrode.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] Embodiments of the present disclosure relate to an organic light emitting display device and a method of manufacturing the same.

Background Art

[0002] As information technology develops, the market for display devices, which are connection media between users and information, is expanding. As a result, the use of display devices such as organic light emitting display (OLED) devices and liquid crystal display (LCD) devices is increasing.

[0003] A display device includes a display panel including a plurality of sub-pixels arranged in a matrix, a driving unit for driving the display panel, and the like. The driving unit includes a scan driving unit that supplies a scan signal (or a gate signal) to the display panel, a data driving unit that supplies a data signal to the display panel, and the like. When a scan signal, a data signal, and the like are supplied to the sub-pixels arranged in a matrix, the selected sub-pixels emit light, thereby enabling an image to be displayed.

[0004] A display device constitutes an interface with a user using various input devices. There is an increasing demand for input devices that are convenient, simple, and can reduce malfunctioning on a daily basis. Therefore, a touch element has been proposed in which a user directly touches a screen to input information. In particular, when applied to an organic light emitting display device, the touch element can be formed on top of a sealing layer for protecting the light emitting portion of the organic light emitting display device.

Summary of the Invention

Problems to be Solved by the Invention

[0005] For cost reduction and structural convenience of a driving IC that drives sub-pixels and a touch element, Chip on Panel (COP) in which the driving IC is attached to a substrate of a display panel is preferred.

[0006] To achieve the COP, display pads are arranged in the pad area of the non-display area. And to reduce the number of processes and manufacturing costs, in the process of forming the conductive layer in the display area, the pad electrodes of the display pads are formed in the same layer as the conductive layer. For example, in the process of forming the source and drain electrodes in the display area, the first pad electrode of the display pad is formed in the same layer as the source and drain electrodes, and in the process of forming the connection electrode connecting the driving transistor and the light-emitting element in the display area, the second pad electrode of the display pad is formed in the same layer as the connection electrode, and in the process of forming the touch sensor layer in the display area, the third pad electrode of the display pad is formed in the same layer as the touch sensor layer. Then, a planarization layer made of a photosensitive organic insulating material is formed on top of the second pad electrode, and an opening for exposing the second pad electrode is formed in the planarization layer.

[0007] Since the planarization layer is composed of a photosensitive organic material and can be patterned once, in the process of forming the hole connecting the connection electrode and the driving transistor, openings for exposing the second pad electrode are formed together. Thereby, with the second pad electrode exposed through the opening, the etching process for patterning the anode electrode of the light-emitting element can proceed. In this case, in the process of patterning the anode electrode, due to the galvanic effect between the metal (for example, Al) used as the second pad electrode and the metal (for example, Ag) used as the material of the anode electrode, metal scum is generated, and the metal scum may cause the anode electrode and the cathode electrode of the light-emitting element to short-circuit, resulting in the possibility of dark spot defects.

[0008] And because the planarization layer is made of an organic insulating material, the adhesion to the lower and upper inorganic insulating layers may decrease, resulting in peeling and the possibility of lifting. Due to the force generated by the lifted insulating layer, the pad electrode constituting the display pad may be peeled off, and there is a possibility that the signal of the driving IC mounted on the display pad cannot be transmitted to the display area, resulting in a defect.

[0009] The problem to be solved by the embodiments of this specification is to provide an organic light-emitting display device and a manufacturing method thereof that can prevent the generation of metal scum and prevent dark spot defects caused by metal scum.

[0010] The problem to be solved by the embodiments of this specification is to provide an organic light-emitting display device and a manufacturing method thereof that can prevent the insulating layer around the display pad from lifting, prevent the pad electrode of the display pad from peeling off, and prevent the defect that the signal of the driving IC mounted on the display pad cannot be transmitted to the display area.

[0011] The problem to be solved by the embodiments of this specification is not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

Means for Solving the Problem

[0012] An organic light-emitting display device according to an embodiment of the present disclosure includes a first inorganic insulating layer disposed on a display region and a pad region of a substrate, a first gate electrode of a first transistor disposed on the first inorganic insulating layer and located in the display region, and a first pad electrode located in the pad region, a second inorganic insulating layer covering the first gate electrode in the display region, covering a part of the first pad electrode in the pad region, and having an opening, an organic insulating layer disposed on the second inorganic insulating layer in the display region, a light-emitting element disposed on the organic insulating layer in the display region, a sealing layer covering the light-emitting element in the display region, a touch sensor layer disposed on the sealing layer in the display region, a second pad electrode disposed on the second inorganic insulating layer and the first pad electrode in the pad region and connected to the first pad electrode through the opening, and a display pad including the first pad electrode and the second pad electrode.

[0013] An organic light-emitting display device according to an embodiment of the present specification includes a substrate including a display region and a pad region, a first inorganic insulating layer disposed on the display region and the pad region of the substrate, a first pad electrode disposed on the first inorganic insulating layer in the pad region, a second inorganic insulating layer disposed on the first inorganic insulating layer and the first pad electrode in the pad region and having an opening, a second pad electrode disposed on the second inorganic insulating layer and the first pad electrode in the pad region and connected to the first pad electrode through the opening, and a display pad including the first pad electrode and the second pad electrode.

[0014] A method for manufacturing an organic light-emitting display device according to an embodiment of the present specification includes forming a first inorganic insulating layer disposed on a substrate including a display region and a pad region; forming a first gate electrode of a first transistor on the first inorganic insulating layer in the display region and a first pad electrode on the first inorganic insulating layer in the pad region; forming a second inorganic insulating layer on the first inorganic insulating layer to cover the first gate electrode in the display region and the first pad electrode in the pad region; forming an organic insulating layer on the second inorganic insulating layer in the display region; forming a light-emitting element on the organic insulating layer in the display region; forming a sealing layer to cover the light-emitting element in the display region; forming an opening in the second inorganic insulating layer in the pad region to expose a part of the first pad electrode; and forming a second pad electrode connected to the first pad electrode through the opening in the second inorganic insulating layer on the touch sensor layer on the sealing layer in the display region and on the second inorganic insulating layer and the first pad electrode in the pad region.

[0015] An organic light-emitting display device according to an embodiment of the present specification includes a substrate including a display region and a pad region; a first inorganic insulating layer on the display region and the pad region; a driving transistor disposed in the display region and including a gate insulating layer on the first inorganic insulating layer; a second inorganic insulating layer disposed on the first inorganic insulating layer in the display region and the pad region to cover the first gate electrode in the display region; a display pad in the pad region including a first pad electrode on the first inorganic insulating layer in the pad region and a second pad electrode on the first pad electrode and the second inorganic insulating layer in the pad region, wherein the second pad electrode is connected to the first pad electrode through an opening in the second inorganic insulating layer in the pad region.

[0016] The display device according to an embodiment of the present specification includes a substrate including a display region and a pad region; a first inorganic insulating layer on the display region and the pad region, and a driving transistor of the display region including a gate electrode located on the first inorganic insulating layer of the display region; a second inorganic insulating layer located on the first inorganic insulating layer of the display region and the pad region and covering the first gate electrode of the display region; a light-emitting element on the second inorganic insulating layer of the display region connected to the driving transistor; a touch sensor layer on the light-emitting element of the display region; a first pad electrode on the first inorganic insulating layer of the pad region having an end covered by the second inorganic insulating layer in the pad region and made of the same material as the gate electrode of the driving transistor; and a second pad electrode on the second inorganic insulating layer of the pad region connected to the first pad electrode through a hole in the second inorganic insulating layer in the pad region and made of the same material as the touch sensor layer.

Effect of the Invention

[0017] According to the embodiment of the present specification, by forming the pad electrode of the display pad in the same layer as the gate electrode of the first transistor (driving transistor) and patterning the anode electrode of the light-emitting element in a state where the pad electrode of the display pad is covered with an inorganic insulating layer above the gate electrode of the first transistor, it is possible to prevent the generation of metal scum during the process of patterning the anode electrode, and it is possible to provide an organic light-emitting display device and a manufacturing method thereof that can prevent the occurrence of dark spot defects caused by the short circuit between the anode electrode and the cathode electrode of the light-emitting element due to the metal scum.

[0018] According to the embodiments of the present specification, by disposing inorganic insulating layers on the upper and lower portions of the pad electrodes constituting the display pads, it is possible to prevent the insulating layer around the pad electrodes from lifting, and by preventing the pad electrodes of the display pads from peeling due to the force generated when the insulating layer lifts, it is possible to prevent a defect in which the signals of the driving IC mounted on the display pads cannot be transmitted to the display area, and an organic light-emitting display device and a manufacturing method thereof can be provided.

[0019] The effects of the present specification are not limited to the effects mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the following description.

Brief Description of the Drawings

[0020]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5a

Figure 5b

Figure 5c

Figure 5d

Figure 6

Figure 7

Figure 8

Mode for Carrying Out the Invention

[0021] Hereinafter, some embodiments of the present disclosure will be described in detail with reference to exemplary drawings. When adding reference numerals to the components of each drawing, for the same components, even if they are shown on other drawings, the same numerals can be attached as much as possible. In the description of the present disclosure, when it is determined that a specific description of a related known configuration or function may obscure the gist of the present disclosure, the detailed description thereof will be omitted. When terms such as "including", "having", "consisting of", etc. mentioned in this specification are used, other parts may be added unless "only" is used. When a component is expressed in the singular, it can include the case where a plurality are included unless otherwise explicitly stated.

[0022] Also, when describing the components of the present disclosure, terms such as first, second, A, B, (a), (b), etc. can be used. These terms are only for distinguishing the components from other components, and the essence, order, sequence, number, etc. of the components are not limited by these terms.

[0023] In the description of the positional relationship of components, when it is described that two or more components are "connected", "coupled", or "joined", it should be understood that two or more components can be directly "connected", "coupled", or "joined", but it is also possible that two or more components and other components are further "interposed" and "connected", "coupled", or "joined". Here, the other components may be included in one or more of the two or more components that are "connected", "coupled", or "joined" to each other.

[0024] In the description of the relationship of the time flow regarding components, operation methods, manufacturing methods, etc., for example, when the time sequence relationship or the sequential relationship of the flow is described by "after ~", "subsequent to ~", "next to ~", "before ~", etc., unless "immediately" or "directly" is used, it may include non - continuous cases.

[0025] On the other hand, when a numerical value regarding a component or its corresponding information (for example, level, etc.) is mentioned, even without a separate explicit description, the numerical value or its corresponding information can be interpreted as including the range of errors that can occur due to various factors (for example, process - related factors, internal or external impacts, noise, etc.).

[0026] Hereinafter, various embodiments of this specification will be described in detail with reference to the accompanying drawings.

[0027] FIG. 1 is a perspective view of a display panel of an organic light - emitting display device according to an embodiment of the present disclosure.

[0028] Referring to FIG. 1, an organic light - emitting display device according to an embodiment of the present disclosure displays an image through unit pixels including light - emitting elements. And, during the touch period, the organic light - emitting display device senses the amount of change in mutual capacitance due to the user's touch through the touch electrode TE, and senses the presence or absence of touch and the touch position.

[0029] For this purpose, the display panel DISP includes a plurality of sub - pixels SP arranged in a matrix on the substrate 110, a sealing layer 180 arranged on the plurality of sub - pixels SP, and mutual capacitance Cm arranged on the sealing layer 180.

[0030] Each sub - pixel SP can include a light - emitting element ED, a first transistor T1 for driving the light - emitting element ED, a second transistor T2 for transmitting a data voltage VDATA to the first node N1 of the first transistor T1, a storage capacitor Cst for maintaining a constant voltage during one frame, and the like.

[0031] The first transistor T1 can include a first node N1 to which a data voltage can be applied, a second node N2 electrically connected to the light-emitting element ED, and a third node N3 to which a driving voltage VDD is applied from a driving voltage line DVL. The first node N1 is a gate node, the second node N2 is a source node or a drain node, and the third node N3 can be a drain node or a source node. Such a first transistor T1 is also called a driving transistor for driving the light-emitting element ED.

[0032] The light-emitting element ED can include a first electrode (e.g., an anode electrode), a light-emitting layer, and a second electrode (e.g., a cathode electrode). The first electrode is electrically connected to the second node N2 of the first transistor T1, and the second electrode can have a base voltage VSS applied thereto.

[0033] The light-emitting layer in such a light-emitting element ED may be an organic light-emitting layer containing an organic substance. In this case, the light-emitting element ED may be an organic light-emitting diode (OLED).

[0034] The second transistor T2 is controlled to be turned on or off by a scan signal SCAN applied via a gate line GL, and can be electrically connected between the first node N1 of the first transistor T1 and a data line DL. Such a second transistor T2 is also called a switching transistor.

[0035] When the second transistor T2 is turned on by the scan signal SCAN, it transmits the data voltage VDATA supplied from the data line DL to the first node N1 of the first transistor T1. A storage capacitor Cst can be electrically connected between the first node N1 and the second node N2 of the first transistor T1.

[0036] As shown in FIG. 1, each sub-pixel SP can have a 2T1C structure including two transistors T1 and T2 and one capacitor Cst. Optionally, it may further include one or more transistors and may further include one or more capacitors.

[0037] The storage capacitor Cst is not a parasitic capacitor (e.g., Cgs, Cgd), which is an internal capacitor that may exist between the first node N1 and the second node N2 of the first transistor T1, but may be an externally designed external capacitor outside the first transistor T1.

[0038] Each of the first transistor T1 and the second transistor T2 can be an n-type transistor or a p-type transistor.

[0039] As described above, circuit elements such as the light-emitting element ED, transistors T1 and T2, and capacitor Cst are arranged in the display panel DISP. Since such circuit elements, particularly the light-emitting element ED, are vulnerable to external moisture, oxygen, etc., a sealing layer 180 for preventing external moisture and oxygen from penetrating into the circuit elements can be arranged in the display panel DISP.

[0040] In the organic light-emitting display device according to the embodiment of the present disclosure, the touch panel TSP can be formed on the sealing layer 180. That is, in the organic light-emitting display device, a touch sensor layer including a plurality of touch electrodes TE and the like constituting the touch panel TSP can be arranged on the sealing layer 180.

[0041] During touch sensing, a touch driving signal or a touch sensing signal can be applied to the touch electrode TE. During touch sensing, a potential difference may be formed between the touch electrode TE disposed with the encapsulation layer 180 interposed therebetween and the cathode electrode, and an unnecessary parasitic capacitance may be formed. Since such a parasitic capacitance can reduce the touch sensitivity, in order to reduce the parasitic capacitance, the distance between the touch electrode TE and the cathode electrode can be designed to be a certain value (for example, 5 μm) or more in consideration of the panel thickness, the panel manufacturing process, the display performance, and the like. For this purpose, as an example, the thickness of the encapsulation layer 180 can be designed to be at least 5 μm or more.

[0042] FIG. 2 is a plan view showing an organic light emitting display device according to an embodiment of the present disclosure.

[0043] Referring to FIG. 2, the display panel DISP of the organic light emitting display device according to the embodiment of the present disclosure can include a display area DA and a non-display area NDA disposed at the edge of the display area DA. The display area DA is an area where a plurality of sub-pixels are arranged and is an area where an image is displayed. The display area (DA) may be referred to as an active area.

[0044] In the display area DA, a plurality of gate lines (not shown) and data lines (not shown) intersect to define a plurality of pixel areas. Also, a plurality of first touch lines Y-TEL and a plurality of second touch lines X-TEL may be arranged in the display area DA.

[0045] The plurality of first touch lines Y-TEL can include a plurality of first touch electrodes Y-TE and a plurality of first bridges Y-BR. The plurality of first touch electrodes Y-TE included in each first touch line Y-TEL can be arranged at regular intervals along the Y direction, which is the first direction. The first touch electrode Y-TE can be electrically connected to an adjacent first touch electrode Y-TE via the first bridge Y-BR.

[0046] The plurality of second touch lines X-TEL can include a plurality of second touch electrodes X-TE and a plurality of second bridges X-BR. The plurality of second touch electrodes X-TE included in each second touch line X-TEL can be arranged at regular intervals along the X direction which is the second direction. The second touch electrode X-TE can be electrically connected to an adjacent second touch electrode X-TE via the second bridge X-BR.

[0047] The first and second touch electrodes (Y-TE, X-TE) and the first and second bridges (Y-BR, X-BR) can be formed in a mesh shape. Thereby, the resistance and capacitance of the first and second touch electrodes (Y-TE, X-TE) and the first and second bridges (Y-BR, X-BR) themselves are reduced, the RC time constant is reduced, and the touch sensitivity can be improved. Also, the line widths of the mesh-shaped first and second touch electrodes (Y-TE, X-TE) and the first and second bridges (Y-BR, X-BR) are very thin, and it is possible to prevent the aperture ratio and transmittance from decreasing due to the first and second touch electrodes (Y-TE, X-TE) and the first and second bridges (Y-BR, X-BR).

[0048] A routing line RL can be connected to each of the first touch line Y-TEL and the second touch line X-TEL. The routing line RL can extend to at least one of the upper side and the lower side of the display area DA and be connected to a touch pad TPAD arranged in the non-display area NDA. A touch sensing circuit (not shown) can be connected to the touch pad TPAD.

[0049] The routing line RL can transmit a touch drive pulse generated by the touch sensing circuit to the first touch line Y-TEL via the touch pad TPAD, and transmit a touch signal from the second touch line X-TEL to the touch sensing circuit via the touch pad TPAD.

[0050] The data driver circuit can be configured in the form of an integrated circuit (IC) and implemented in the non-display area (NDA). The driving IC 800 in FIG. 2 includes the data driver circuit. Display pads (DPAD) can be arranged in the non-display area (NDA) for electrical connection with the driving IC 800.

[0051] The non-display area (NDA) can include a pad area (PA) where the touch pad (TPAD) and the display pads (DPAD) are arranged, and a bending area (BA) where the display panel (DISP) can be bent or folded. The bending area (BA) corresponds to the area that is bent to fold and arrange components that do not perform display functions, such as the touch pad (TPAD), the display pads (DPAD), the touch sensing circuit, and the driving IC 800, on the back of the display area (DA).

[0052] As shown in FIG. 2, the bending area (BA) can be arranged between the display area (DA) and the pad area (PA). Alternatively, the bending area (BA) can be arranged on at least one side of the upper, lower, left, or right side of the non-display area (NDA). This can maximize the area occupied by the display area (DA) across the entire screen of the display device, and the non-display area (NDA) can be hidden behind the display area (DA).

[0053] FIG. 3 is a cross-sectional view of the display area and the bending area of the organic light-emitting display device according to an embodiment of the present disclosure.

[0054] Referring to FIG. 3, the sub-pixel can include a first transistor (T1), a second transistor (T2), and a light-emitting element (ED). First, as described with reference to FIG. 1, the first transistor (T1) is a driving transistor that drives the light-emitting element (ED), and the second transistor (T2) can be a switching transistor.

[0055] FIG. 3 shows one switch transistor, but at least one or more switch transistors may be arranged within a subpixel. That is, since the subpixel has various structures such as 3T1C, 4T1C, 5T1C, 6T1C, 7T1C, etc., one or more switch transistors can be arranged.

[0056] The first transistor T1 may include a first semiconductor pattern 310, a first gate electrode 320 overlapping the first semiconductor pattern 310, and a first source electrode 330S and a first drain electrode 330D.

[0057] The first gate electrode 320 can be arranged on the first inorganic insulating layer 140. The first inorganic insulating layer 140 can be a multi-layer stack of inorganic insulators such as silicon oxide (SiO X ) and silicon nitride (SiN X ). For example, the first inorganic insulating layer 140 may include a first interlayer insulating layer 141, an intermediate buffer layer 142, and a first gate insulating layer 143 stacked in sequence.

[0058] The first semiconductor pattern 310 can be arranged on the intermediate buffer layer 142. The first semiconductor pattern 310 can be composed of an oxide semiconductor material. The oxide semiconductor material can be composed of oxides of metals such as zinc (Zn), indium (In), gallium (Ga), tin (Sn), titanium (Ti), etc. or combinations of metals such as zinc (Zn), indium (In), gallium (Ga), tin (Sn), titanium (Ti), etc. and their oxides. More specifically, the oxide semiconductor can include zinc oxide (ZnO), zinc - tin oxide (ZTO), zinc - indium oxide (ZIO), indium oxide (InO), titanium oxide (TiO), indium - gallium - zinc oxide (IGZO), indium - zinc - tin oxide (IZTO), etc.

[0059] In the prior art, a polycrystalline semiconductor pattern, which is advantageous for high-speed operation, was used as the active layer for the driving transistor. However, a driving transistor including a polycrystalline semiconductor pattern may have a problem in that a leakage current is generated in the off state, consuming power. In particular, the problem of power consumption in the off state becomes more problematic during low-speed operations such as when the display device displays a still image representing a document screen. Using an oxide semiconductor pattern as the active layer of the driving transistor can contribute to blocking the generation of leakage current.

[0060] The first semiconductor pattern 310 may include a first channel region 310a, and a first source region 310b and a first drain region 310c adjacent to the first channel region 310a with the first channel region 310a interposed therebetween. The first channel region 310a can be composed of an undoped intrinsic oxide semiconductor. Also, the first source region 310b and the first drain region 310c may be regions doped with group 3 or group 5 impurity ions in the intrinsic oxide semiconductor and made conductive.

[0061] On the first semiconductor pattern 310 and the intermediate buffer layer 142, an inorganic insulator such as silicon oxide (SiO X ) or / and silicon nitride (SiN X ) can be deposited to form the first gate insulating layer 143. The first gate insulating layer 143 can protect the first semiconductor pattern 310 from the outside and serve as insulation.

[0062] On the first gate insulating layer 143, a first gate electrode 320 overlapping the first channel region 310a of the first semiconductor pattern 310 can be formed. The first gate electrode 320 can be composed of a metallic substance. For example, the first gate electrode 320 may be a single layer or a multilayer made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, but is not limited thereto.

[0063] The second transistor T2 can include a second semiconductor pattern 210, a second gate electrode 220 overlapping the second semiconductor pattern 210, and a second source electrode 230S and a second drain electrode 230D.

[0064] The second semiconductor pattern 210 can be disposed on the lower buffer layer 120. The second semiconductor pattern 210 can include a second channel region 210a through which charges move, and a second source region 210b and a second drain region 210c adjacent to the second channel region 210a with the second channel region 210a therebetween. The second channel region 210a can be composed of an undoped semiconductor. Also, the second source region 210b and the second drain region 210c can be regions doped with group 3 or group 5 impurity ions in the semiconductor and made conductive.

[0065] The lower buffer layer 120 can be disposed on the substrate 110. The substrate 110 can be composed of a multi-layer in which an organic film and an inorganic film are alternately laminated. For example, the substrate 110 can be formed by alternately laminating an organic film such as polyimide and an inorganic film such as silicon oxide (SiO2).

[0066] The lower buffer layer 120 can include a first lower buffer layer 121 disposed on the substrate 110 and a second lower buffer layer 122 disposed on the first lower buffer layer 121. The first lower buffer layer 121 is for blocking moisture and the like that can penetrate from the outside, and can be used by laminating silicon oxide (SiO X ) and the like in multiple layers. The second lower buffer layer 122 can be composed of the same material as the first lower buffer layer 121.

[0067] On the entire surface of the lower buffer layer 120 on which the second semiconductor pattern 210 is formed, silicon oxide (SiO X ) or / and silicon nitride (SiN XAn inorganic insulator such as the like can be deposited to form the second gate insulating layer 130. The second gate insulating layer 130 can serve to protect and insulate the second semiconductor pattern 210 from the outside.

[0068] A second gate electrode 220 overlapping with the second channel region 210a of the second semiconductor pattern 210 can be formed on the second gate insulating layer 130. The second gate electrode 220 can be composed of a metallic substance. For example, the second gate electrode 220 may be a single layer or a multilayer made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, but is not limited thereto.

[0069] The first inorganic insulating layer 140 can be disposed on the entire surface of the second gate insulating layer 130 on which the second gate electrode 220 is formed. As described above, the first gate electrode 320 can be disposed on the first inorganic insulating layer 140.

[0070] A second interlayer insulating layer 150 can be formed on the entire surface of the first inorganic insulating layer 140 on which the first gate electrode 320 is formed. The second interlayer insulating layer 150 can be formed by depositing an inorganic insulating film such as silicon oxide (SiO X ) or / and silicon nitride (SiN X ) in a single layer or multiple layers. The second interlayer insulating layer 150 can be referred to as the second inorganic insulating layer.

[0071] The first source electrode 330S, the first drain electrode 330D, the second source electrode 230S, and the second drain electrode 230D can be disposed on the second interlayer insulating layer 150.

[0072] The second interlayer insulating layer 150 and the first gate insulating layer 143 may be provided with holes to electrically connect the first source electrode 330S and the first drain electrode 330D to the first semiconductor pattern 310, respectively. The second interlayer insulating layer 150, the first gate insulating layer 143, the intermediate buffer layer 142, the first interlayer insulating layer 141, and the second gate insulating layer 130 may be provided with holes to electrically connect the second source electrode 230S and the second drain electrode 230D to the second semiconductor pattern 210, respectively.

[0073] The organic light-emitting display device according to an embodiment of the present disclosure may further include a blocking layer 222. The blocking layer 222 may be disposed under the first semiconductor pattern 310 of the first transistor T1 so as to overlap the first semiconductor pattern 310. The blocking layer 222 may have an area larger than the area of the first semiconductor pattern 310.

[0074] The blocking layer 222 can prevent or reduce the light incident from the outside of the light-emitting display device from irradiating the first semiconductor pattern 310 and causing the first semiconductor pattern 310 to malfunction. The blocking layer 222 can prevent or reduce the problem of charge flowing in from the substrate 110. For example, when a voltage is applied to the first gate electrode 320 for a long time, due to the electric field generated in the first transistor T1, the charges in the substrate 110 can flow into the first channel region 310a of the first semiconductor pattern 310, and a back channel phenomenon that varies the charge amount in the first channel region 310a can occur. The charges can be holes or charges depending on the polarity of the electric field. The substrate 110 can change the current of the first transistor T1 and cause a change in the threshold voltage of the first transistor T1. This may lead to a change in the luminance of the pixel and the occurrence of afterimages. By disposing the blocking layer 222 between the substrate 110 and the first semiconductor pattern 310, blocking the inflow of unnecessary charges flowing from the substrate 110 into the first transistor T1, and preventing the variation of the threshold voltage Vth of the first transistor T1, afterimages can be prevented or reduced. The stability of the first transistor T1 during driving can be ensured, and the display quality can be improved.

[0075] The blocking layer 222 can be disposed on the second gate insulating layer 130. The blocking layer 222 can be formed together with the second gate electrode 220 in the process of forming the second gate electrode 220. Therefore, the blocking layer 222 can be composed of the same material in the same layer as the second gate electrode 220. By forming the blocking layer 222 in the same process as the second gate electrode 220, the number of processes can be reduced, and the manufacturing cost can be reduced.

[0076] The blocking layer 222 can be electrically connected to the first source electrode 330S. Thereby, the same voltage as that of the first source electrode 330S can be applied to the blocking layer 222. Since the voltage of the blocking layer 222 can be maintained at the same voltage as that of the first source electrode 330S, changes in the characteristics of the elements arranged around the blocking layer 222 can be reduced. That is, since the blocking layer 222 is less affected by an external voltage, it is possible to prevent or reduce a change in the threshold voltage Vth of the first transistor T1 due to a back channel phenomenon. Although not shown, a blocking layer can also be arranged below the second transistor T2.

[0077] The second interlayer insulating layer 150, the first gate insulating layer 143, the intermediate buffer layer 142, and the first interlayer insulating layer 141 can be provided with holes for electrically connecting the blocking layer 222 and the first source electrode 330S, and the first source electrode 330S can be arranged in the holes.

[0078] In the bending region BA, as shown in FIG. 3, an open portion OA can be formed so that the display panel can be easily bent. The open portion OA is formed by etching an inorganic insulating layer deposited on the bending region BA.

[0079] When the substrate 110 is bent, continuous bending stress is applied to the inorganic insulating layers 120, 130, 140, 150 arranged in the bending region BA. The inorganic insulating layers 120, 130, 140, 150 have lower elastic force than organic insulators, and cracks are likely to occur in the inorganic insulating layers 120, 130, 140, 150. Cracks generated in the inorganic insulating layers 120, 130, 140, 150 may propagate to the display region DA along the inorganic insulating layers 120, 130, 140, 150, leading to line defects and poor element driving.

[0080] The open portion OA is generated by removing a number of inorganic insulating layers 120, 130, 140, 150 that can have cracks. Specifically, the open portion OA is generated by removing the lower buffer layer 120, the second gate insulating layer 130, the first inorganic insulating layer 140, and the second interlayer insulating layer 150 deposited on the bending region BA.

[0081] The planarization layers 161, 162 can be arranged to cover the first transistor T1 and the second transistor T2. The planarization layers 161, 162 can protect the transistors disposed therebelow and can mitigate or planarize steps due to various patterns.

[0082] The planarization layers 161, 162 can be formed of at least one or more of organic insulating materials such as BCB (BenzoCycloButene), acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin, but are not limited thereto. The planarization layers 161, 162 can be arranged as a single layer, but may be arranged as a plurality of two or more layers in consideration of the arrangement of electrodes.

[0083] The planarization layers 161, 162 can extend from the display region DA to the bending region BA and can cover the bending region BA. In the bending region BA, the planarization layers 161, 162 made of an organic insulator having a higher elastic force than the inorganic insulator can be arranged. The planarization layers 161, 162 can relieve the bending stress generated when the substrate 110 is bent, prevent or reduce the occurrence of cracks, and can protect the wiring arranged in the bending region BA.

[0084] As the display device evolves to higher resolution, various signal wirings increase. Therefore, since it is difficult to arrange all the wirings in a more layered manner while ensuring the minimum interval, an additional layer is provided. Such an additional layer allows for more room in wiring arrangement and makes the layout design of wires / electrodes easier. Also, when using a dielectric material as a planarization layer composed of multiple layers, the planarization layer can also be utilized for forming capacitance between metal layers.

[0085] When the planarization layers 161 and 162 are arranged as multiple layers, the planarization layers 161 and 162 can include a first planarization layer 161 and a second planarization layer 162. A connection electrode 500 can be arranged between the first planarization layer 161 and the second planarization layer 162.

[0086] A hole is formed in the first planarization layer 161, the connection electrode 500 is arranged in the hole, and the first transistor T1 and the light-emitting element ED can be electrically connected via the connection electrode 500. For example, one end (or a part) of the connection electrode 500 can be connected to the first transistor T1, and the other end (or another part) of the connection electrode 500 can be connected to the light-emitting element ED. The connection electrode 500 can contain aluminum (Al).

[0087] The light-emitting element ED can include a first electrode 610, a light-emitting layer 620, and a second electrode 630 that are sequentially stacked. The first electrode 610 can be an anode electrode, and the second electrode 630 can be a cathode electrode.

[0088] The first electrode 610 of the light-emitting element ED can be arranged on the second planarization layer 162. The first electrode 610 is connected to the connection electrode 500 through a hole provided in the second planarization layer 162, and can be electrically connected to the first drain electrode 330D via the connection electrode 500. The first electrode 610 supplies holes to the light-emitting layer 620 and can be made of a conductive material with a high work function.

[0089] When the organic light-emitting display device is of the top emission type, the first electrode 610 can be arranged using an opaque conductive material as a reflective electrode for reflecting light. For example, the first electrode 610 can be formed of at least one of silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr), or alloys thereof. For example, the first electrode 610 can have a three-layer structure of silver (Ag) / lead (Pb) / copper (Cu), but is not limited thereto.

[0090] The bank layer 170 can be arranged on the first electrode 610 and the second planarization layer 162. The bank layer 170 can partition a plurality of sub-pixels, reduce the light leakage phenomenon, and prevent or reduce the color mixing that occurs at various viewing angles. The bank layer 170 can have a bank hole that exposes the first electrode 610 corresponding to the light-emitting region.

[0091] The bank layer 170 can be made of at least one of inorganic insulating materials such as silicon nitride (SiNx) or silicon oxide (SiOx), or organic insulating materials such as BCB (BenzoCycloButene), acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin, but is not limited thereto.

[0092] The spacer 172 can be further arranged on the bank layer 170. The spacer 172 can buffer the gap between the substrate 110 on which the light-emitting element ED is formed and the upper substrate, and reduce the risk of damage to the organic light-emitting display device from external impacts. The spacer 172 can be formed of the same material as the bank layer 170 and can be formed simultaneously with the bank layer 170, but is not limited thereto.

[0093] The light-emitting layer 620 can be disposed on the first electrode 610 and the bank layer 170. The light-emitting layer 620 can include one of a red organic light-emitting layer, a green organic light-emitting layer, a blue organic light-emitting layer, or a white organic light-emitting layer in order to emit light of a specific color. When the light-emitting layer 620 includes a white organic light-emitting layer, a color filter for converting white light from the white organic light-emitting layer into light of other colors can be disposed on the upper portion of the light-emitting element ED. Further, in addition to the organic light-emitting layer, the light-emitting layer 620 may further include, but is not limited to, a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like.

[0094] The second electrode 630 can be disposed on the light-emitting layer 620. The second electrode 630 can supply electrons to the light-emitting layer 620 and can be made of a conductive material having a low work function.

[0095] When the light-emitting display device is a top emission type, the second electrode 630 can be disposed using a transparent conductive material that transmits light. For example, it may be formed of at least one of indium tin oxide (ITO) and indium zinc oxide (IZO), but is not limited thereto.

[0096] Further, it can be disposed using a translucent conductive material that transmits light. For example, it can be formed of at least one of alloys such as LiF / Al, CsF / Al, Mg:Ag, Ca / Ag, Ca:Ag, LiF / Mg:Ag, LiF / Ca / Ag, and LiF / Ca:Ag, but is not limited thereto.

[0097] A sealing layer 180 can be disposed on the second electrode 630 of the light-emitting element ED. The sealing layer 180 can protect the light-emitting element ED from external moisture, oxygen, or foreign matter. For example, it can prevent or reduce the penetration of external oxygen and moisture to prevent or reduce the oxidation of the light-emitting substance and the electrode substance. Such a sealing layer 180 may be a single layer or multiple layers.

[0098] For example, when the sealing layer 180 is composed of multiple layers, the sealing layer 180 can include one or more inorganic sealing layers and one or more organic sealing layers. As a specific example, the sealing layer 180 can include a first sealing layer 181, a second sealing layer 182, and a third sealing layer 183 that are sequentially laminated. Here, the second sealing layer 182 can be located between the first sealing layer 181 and the third sealing layer 183.

[0099] The first sealing layer 181 and the third sealing layer 183 may be made of at least one or more inorganic substances such as silicon nitride (SiNx), silicon oxide (SiOx), or aluminum oxide (AlyOz), but are not limited thereto. The first sealing layer 181 and the third sealing layer 183 can be formed using a vacuum film-forming method such as chemical vapor deposition (CVD) or atomic layer deposition (ALD), but are not limited thereto.

[0100] The second sealing layer 182 can cover foreign matter or particles that may be generated in the manufacturing process. Also, the second sealing layer 182 can planarize the surface of the first sealing layer 181. For example, the second sealing layer 182 is a particle covering layer, but is not limited to the term.

[0101] The second encapsulation layer 182 may be an organic material, for example, a polymer such as silicon oxycarbide (SiOCz), epoxy, polyimide, polyethylene, acrylate, etc., but is not limited thereto. The second encapsulation layer 182 can be made of a thermosetting material or a photocurable material that cures by heat or light.

[0102] A plurality of touch sensor layers 710 and 720 can be disposed on the encapsulation layer 180.

[0103] The plurality of touch sensor layers 170 and 720 include a plurality of first touch lines Y-TEL extending in the Y-axis direction and a plurality of second touch lines X-TEL extending in the X-axis direction so as to intersect without contacting the first touch lines Y-TEL.

[0104] To arrange such a plurality of first touch lines Y-TEL and a plurality of second touch lines X-TEL, a touch buffer layer 190 is disposed on the encapsulation layer 180, a first touch sensor layer 710 is disposed on the touch buffer layer 190, a touch insulating layer 191 covering the first touch sensor layer 710 is disposed on the touch buffer layer 190, and a second touch sensor layer 720 can be disposed on the touch insulating layer 191.

[0105] The first touch sensor layer 710 includes, for example, a plurality of first touch electrodes Y-TE and a plurality of first bridges Y-BR of the plurality of first touch lines Y-TEL, and a plurality of second bridges X-BR of the plurality of second touch lines X-TEL. The second touch sensor layer 720 includes a plurality of second touch electrodes X-TE of the plurality of second touch lines X-TEL. The second bridge X-BR is exposed through a touch contact hole penetrating the touch insulating layer 191 and is electrically connected to the second touch electrode X-TE.

[0106] The touch buffer layer 190 and the touch insulating layer 191 are silicon oxide (SiO X) or / and silicon nitride (SiN X ) and can be formed of an inorganic insulator. The touch buffer layer 190 can block the penetration of a chemical solution (such as a developer or an etching solution) or external moisture used in the manufacturing process of the first and second touch sensor layers 710 and 720 into the light-emitting element layer ED containing an organic substance. In addition, the first and second touch sensor layers 710 and 720 disposed on the upper part of the touch buffer layer 190 can prevent the problem of disconnection due to an external impact and can block interference signals that may occur during the driving of the first and second touch sensor layers 710 and 720.

[0107] The planarization layer, that is, the touch planarization layer 192, can be disposed on the touch insulating layer 191 so as to cover the second touch sensor layer 720. The touch planarization layer 192 can be formed of at least one or more substances among organic insulating substances such as BCB (BenzoCycloButene), acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin, and is not limited thereto.

[0108] FIG. 4 is a cross-sectional view showing a display area DA and a pad area PA of an organic light-emitting display device according to an embodiment of the present disclosure.

[0109] Referring to FIG. 4, a display pad DPAD can be disposed in the pad area PA of the substrate 110. Although not shown in FIG. 4, a driving IC can be mounted on the display pad DPAD.

[0110] The display pad DPAD can include a first pad electrode 322 and a second pad electrode 722.

[0111] The first pad electrode 322 can be formed together with the first gate electrode 320 of the first transistor T1 in the process of forming the first gate electrode 320 of the first transistor T1 in the display area DA. Therefore, the first pad electrode 322 can be formed of the same material in the same layer as the first gate electrode 320 of the first transistor T1. The first gate electrode 320 and the first pad electrode 322 of the first transistor T1 can be disposed on the first gate insulating layer 143.

[0112] In the pad region PA, a second interlayer insulating layer 150 covering the first pad electrode 322 can be disposed on the first gate insulating layer 143. The lower surface of the second interlayer insulating layer 150 can contact the upper surface of the first gate insulating layer 143. The second interlayer insulating layer 150 may be referred to as a second inorganic insulating layer, and the first gate insulating layer 143 can constitute the upper surface of the first inorganic insulating layer 140. The second inorganic insulating layer can contact the upper surface of the first inorganic insulating layer 140. The second interlayer insulating layer 150 can include an opening exposing at least a part of the first pad electrode 322.

[0113] In the pad region PA, a touch insulating layer 191 can be disposed on the second interlayer insulating layer 150. The touch insulating layer 191 can include an opening connected to the opening of the second interlayer insulating layer 150. The second interlayer insulating layer 150 and the touch insulating layer 191 can cover the edge (i.e., the tip) of the first pad electrode 322 and expose the central portion of the first pad electrode 322.

[0114] A second pad electrode 722 can be disposed on the touch insulating layer 191. The second pad electrode 722 can be connected to the first pad electrode 322 through the opening. That is, the second pad electrode 722 can be in direct contact with the first pad electrode 322 at the opening.

[0115] The second pad electrode 722 can be formed together with the second touch sensor layer 720 in the process of forming the second touch sensor layer 720 in the display area DA. Therefore, the second pad electrode 722 can be formed of the same material as the second touch sensor layer 720.

[0116] A dummy pad electrode 224 can be further disposed below the first pad electrode 322. The dummy pad electrode 224 can be disposed so as to overlap the first pad electrode 322.

[0117] The dummy pad electrode 224 can be formed together with the second gate electrode 220 in the process of forming the second gate electrode 220 of the second transistor T2 in the display area DA. Therefore, the dummy pad electrode 224 can be formed of the same material in the same layer as the second gate electrode 220 of the second transistor T2 in the display area DA. The dummy pad electrode 224 can be formed of the same material in the same layer as the light shielding layer 222.

[0118] Figs. 5A to 5D are cross-sectional views showing an organic light-emitting display device according to an embodiment of the present disclosure at different manufacturing stages.

[0119] Referring to Fig. 5A, a lower buffer layer 120 is formed on a substrate 110, and a second semiconductor pattern 210 is formed on the lower buffer layer 120.

[0120] The lower buffer layer 120 can include a first lower buffer layer 121 and a second lower buffer layer 122. The first lower buffer layer 121 and the second lower buffer layer 122 can be formed of the same material by the same method. The first lower buffer layer 121 and the second lower buffer layer 122 can be formed over the entire substrate including the display area DA and the non-display area NDA. The second semiconductor pattern 210 can include a second channel region 210a, a second source region 210b, and a second drain region 210c. The second channel region 210a can be composed of an undoped semiconductor. The second source region 210b and the second drain region 210c may be regions in which a semiconductor is doped with group 3 or group 5 impurity ions and is made conductive.

[0121] Over the entire surface of the lower buffer layer 120 on which the second semiconductor pattern 210 is formed, an inorganic insulator such as silicon oxide (SiO X ) or / and silicon nitride (SiN X ) is deposited to form the second gate insulating layer 130. The second gate insulating layer 130 can serve to electrically insulate the second gate electrode 220 formed thereon from the second semiconductor pattern 210.

[0122] In the display area DA, a second gate electrode 220 and a light-shielding layer 222 are formed over the second gate insulating layer 130. The second gate electrode 220 is formed over the second channel region 210a, and the light-shielding layer 222 can be formed under the first transistor T1 to be formed later.

[0123] While the second gate electrode 220 is formed in the display area DA, a dummy pad electrode 224 is formed in the pad area PA. The dummy pad electrode 224 can be formed together with the second gate electrode 220 in the process of forming the second gate electrode 220 in the display area DA. Therefore, the dummy pad electrode 224 can be formed of the same material in the same layer as the second gate electrode 220 in the display area DA.

[0124] The second gate electrode 220, the light-shielding layer 222, and the dummy pad electrode 224 can be made of a metallic material. For example, the second gate electrode 220, the light-shielding layer 222, and the dummy pad electrode 224 may be a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, but are not limited thereto.

[0125] Referring to FIG. 5b, a first inorganic insulating layer 140 is formed on the second gate insulating layer 130 on which the second gate electrode 220, the dummy pad electrode 222, and the dummy pad electrode 224 are formed. The first inorganic insulating layer 140 can be formed over the entire substrate including the display area DA and the non-display area NDA.

[0126] The first inorganic insulating layer 140 may be formed by depositing an inorganic insulator including silicon nitride and / or silicon oxide in a single layer or multiple layers. For example, the first inorganic insulating layer 140 may include a first interlayer insulating layer 141, an intermediate buffer layer 142, and a first gate insulating layer 143.

[0127] The first interlayer insulating layer 141 is formed on the second gate insulating layer 130, the intermediate buffer layer 142 is formed on the first interlayer insulating layer 141, a first semiconductor pattern 310 is formed on the intermediate buffer layer 142, and the first gate insulating layer 143 is formed on the intermediate buffer layer 142 on which the first semiconductor pattern 310 is formed.

[0128] The first gate insulating layer 143 can serve to electrically insulate the first gate electrode 320 formed on the upper part and the first semiconductor pattern 310. The first gate insulating layer 143 is silicon oxide (SiO X ) or / and silicon nitride (SiN X) It can include inorganic insulators such as etc. For example, the first gate insulating layer 143 can include a silicon nitride film containing hydrogen particles. After forming the first gate insulating layer 143, in the process of heat-treating the first gate insulating layer 143, hydrogen particles diffuse and penetrate into the first semiconductor pattern 310, thereby making the first semiconductor pattern 310 conductive and forming the first source region 310a and the first drain region 310b.

[0129] In the display region DA, a first gate electrode 320 is formed on the first gate insulating layer 143. While the first gate electrode 320 is formed in the display region DA, a first pad electrode 322 of the display pad is formed in the pad region PA. The first pad electrode 322 can be formed together with the first gate electrode 320 in the process of forming the first gate electrode 320 in the display region DA. Therefore, the first pad electrode 322 of the display pad can be formed of the same material in the same layer as the first gate electrode 320 in the display region DA.

[0130] The first gate electrode 320 and the first pad electrode 322 can be composed of a metal material. For example, the first gate electrode 320 and the first pad electrode 322 may be a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or their alloys, but are not limited thereto.

[0131] Referring to FIG. 5c, a second interlayer insulating layer 150 covering the first gate electrode 320 and the first pad electrode 322 is formed on the first gate insulating layer 143. The second interlayer insulating layer 150 can be formed over the entire substrate including the display region DA and the non-display region NDA. The second interlayer insulating layer 150 can be formed by depositing an inorganic insulating film such as silicon oxide (SiO X ) or / and silicon nitride (SiN X ) in a single layer or multiple layers.

[0132] Subsequently, holes are formed to expose the first and second source regions 310b and 210b and the first and second drain regions 310c and 210c. Next, through the holes, first and second source electrodes 330S and 230S and first and second drain electrodes 330D and 230D respectively connected to the first and second source regions 310b and 210b and the first and second drain regions 310c and 210c can be formed.

[0133] Although not shown, the second interlayer insulating layer 150, the first inorganic insulating layer 140, the second gate insulating layer 130, and the lower buffer layer 120 in the bending region are removed.

[0134] Subsequently, a first planarization layer 161 covering the first and second source electrodes 330S and 230S and the first and second drain electrodes 330D and 230D is formed over the entire substrate including the display region DA and the non-display region NDA.

[0135] The first planarization layer 161 can planarize, for example, one surface of the substrate 110 on which metal electrodes such as the first and second source electrodes 330S and 230S and the first and second drain electrodes 330D and 230D are formed. The first planarization layer 161 can contain a photosensitive organic material. The first planarization layer 161 can be formed of an organic insulating material such as polyacrylate or polyimide, and the embodiments of the present specification are not limited thereto.

[0136] In the exposure and development processes, the first planarization layer 161 is patterned to form a hole exposing the first drain electrode 330D. In the patterning process for forming the hole, the first planarization layer 161 in the pad region PA can be removed.

[0137] Subsequently, a connection electrode 500 connected to the first drain electrode 330D through a via hole is formed. The connection electrode 500 can be formed by depositing a metal material on the first planarization layer 161 and then performing a photolithography etching process to pattern it. The metal material used as the material of the connection electrode 500 can include aluminum (Al).

[0138] Subsequently, a second planarization layer 162 covering the connection electrode 500 is formed over the entire substrate including the display area DA and the non-display area NDA. The second planarization layer 162 can planarize one surface on the substrate 110 on which metal electrodes such as the connection electrode 500 are formed, for example.

[0139] The second planarization layer 162 can be formed of the same material as the first planarization layer 161. The second planarization layer 162 can include a photosensitive organic material. The second planarization layer 162 can be formed of an organic insulating material such as polyacrylate or polyimide.

[0140] In an exposure and development process, the second planarization layer 162 is patterned to form a via hole exposing the connection electrode 500. In the patterning process for forming the via hole, the second planarization layer 162 in the pad region PA can be removed.

[0141] Subsequently, a first electrode 610 of a light-emitting element ED connected to the connection electrode 500 through a via hole is formed. The first electrode 610 can be formed by depositing a metal material on the second planarization layer 162 and then patterning the metal material in a photolithography etching process. The metal material used as the material of the first electrode 610 can be formed of at least one or more of silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr), or an alloy thereof. For example, the first electrode 610 can have a three-layer structure of silver (Ag) / lead (Pb) / copper (Cu), but is not limited thereto.

[0142] The etching process for forming the first electrode 610 proceeds with the first pad electrode 322 covered by the second interlayer insulating layer 150. Since the metal material is etched to form the first electrode 610 with the first pad electrode 322 covered by the second interlayer insulating layer 150, metal scum does not occur during the etching process.

[0143] Referring to FIG. 5d, a bank layer 170 having a bank hole for exposing the first electrode 610 corresponding to the light-emitting region and a spacer 172 are formed on the second planarization layer 162 of the display region DA. The light-emitting layer 620 is formed on the first electrode 610 exposed through the bank layer 170, the spacer 172, and the bank hole. After the second electrode 630 is formed on the light-emitting layer 620, a sealing layer 180 covering the light-emitting element ED is formed on the display region DA, and a touch buffer layer 190 is formed on the sealing layer 180. Next, a first touch sensor layer 710 is formed on the touch buffer layer 190 of the display region DA.

[0144] Subsequently, a touch insulating layer 191 is formed on the touch buffer layer 190 of the display region DA and the second interlayer insulating layer 150 of the pad region PA. The touch insulating layer 191 can be formed of an inorganic insulator such as silicon oxide (SiO2).

[0145] Thereafter, a hole for exposing the first touch sensor layer 710 is formed in the touch insulating layer 191 of the display region DA. In the process of forming a hole in the touch insulating layer 191 of the display region DA, an opening overlapping the first pad electrode 322 is formed in the touch insulating layer 191 of the pad region PA. Next, an opening for exposing a part of the first pad electrode 322 is formed in the second interlayer insulating layer 150 below the opening of the touch insulating layer 191.

[0146] Referring back to FIG. 4, a second touch sensor layer 720 connected to the first touch sensor layer 710 through holes is formed in the display area DA. When the second touch sensor layer 720 is formed in the display area DA, a second pad electrode 722 of the display pad is formed in the pad area PA. The second pad electrode 722 can be formed together with the second touch sensor layer 720 in the process of forming the second touch sensor layer 720 in the display area DA. Therefore, the second pad electrode 722 can be formed of the same material as the second touch sensor layer 720 in the display area DA.

[0147] The second touch sensor layer 720 and the second pad electrode 722 can be composed of a metallic material. The metallic material can be formed as a single-layer or multi-layer structure using a metal with strong corrosion resistance and acid resistance such as Al, Ti, Cu, Mo, etc. and good conductivity. For example, the metallic material can be formed as a stacked three-layer structure such as Ti / Al / Ti or Mo / Al / Mo.

[0148] Thereafter, a planarization layer 192 covering the second touch sensor layer 720 is formed on the touch insulation layer 191 in the display area DA.

[0149] FIG. 6 is a cross-sectional view of a pad area of an organic light-emitting display device according to a first experimental example of the present disclosure.

[0150] Referring to FIG. 6, the pad area PA of the organic light-emitting display device according to the first experimental example includes a substrate 110, a lower buffer layer 120, a second gate insulation layer 130, a dummy pad electrode 224, a first interlayer insulation layer 141, a second interlayer insulation layer 150, a first pad electrode 332, a second pad electrode 722, a second planarization layer 162, a touch insulation layer 191, and a third pad electrode 510.

[0151] The display pad DPAD′ can be composed of the first pad electrode 332, the second pad electrode 722, and the third pad electrode 510.

[0152] The first pad electrode 332 can be formed together with the first and second source electrodes 330S and 230S and the first and second drain electrodes 330D and 230D when the first and second source electrodes 330S and 230S and the first and second drain electrodes 330D and 230D are formed in the display area DA. The third pad electrode 510 can be formed together with the connection electrode 500 when the connection electrode 500 is formed in the display area DA. The second pad electrode 722 can be formed together with the second touch sensor layer 720 when the second touch sensor layer 720 is formed in the display area DA.

[0153] Unlike the above-described embodiments of the present disclosure, the organic light-emitting display device according to the first experimental example forms the first pad electrode 332 in the same layer as the first and second source electrodes 330S and 230S and the first and second drain electrodes 330D and 230D, and forms the third pad electrode 510 in the same layer as the connection electrode 500.

[0154] In order to connect the first electrode 610 of the light-emitting element ED to the connection electrode 500, in the step of forming a hole in the second planarization layer 162 of the display area DA, an opening for exposing the third pad electrode 510 is formed in the second planarization layer 162 of the pad area PA. Since the second planarization layer 162 covering the connection electrode 500 and the third pad electrode 510 is composed of a photosensitive organic material and only one patterning is possible, an opening is formed in the pad area PA in the step of forming a hole in the display area DA.

[0155] After forming holes and openings in the second planarization layer 162, in order to form the first electrode 610 of the light-emitting element ED in the display area DA, a metal film is formed on the second planarization layer 162, and an etching process for patterning the metal film is performed. However, since the process of etching the metal film proceeds with the third pad electrode 510 exposed through the opening, due to the galvanic effect between the metal substance (for example, Al) used as the material of the third pad electrode 510 and the metal substance (for example, Ag) used as the material of the first electrode 610, metal scum is generated. This metal scum may cause the first electrode 610 and the second electrode 630 of the light-emitting element ED to be shorted, resulting in the possibility of dark spot defects.

[0156] On the other hand, in the first experimental example, the edge of the third pad electrode 510 is covered with the second planarization layer 162 above the third pad electrode 510. The second planarization layer 162 is an organic insulating substance, and the second interlayer insulating layer 150 disposed below the second planarization layer 162 and the touch insulating layer 191 disposed above the second planarization layer 162 are inorganic insulating substances. Therefore, the adhesion between the second interlayer insulating layer 150 and the second planarization layer 162, and between the second planarization layer 162 and the touch insulating layer 191 is low, resulting in floating. Due to the force generated by the floating of the insulating layer, the pad electrodes 332, 510, 722 constituting the display pad DPAD′ are peeled off, which may cause a defect that the signal of the driving IC mounted on the display pad DPAD′ cannot be transmitted to the display area.

[0157] FIG. 7 is an SEM photograph showing the defect according to the first experimental example, and FIG. 8 is an SEM photograph showing the defect according to the second experimental example.

[0158] FIG. 7 shows a case where the first pad electrode 332, the second pad electrode 722, and the third pad electrode 510 are stacked to form the display pad DPAD′, and FIG. 8 shows a case where the second pad electrode 722 and the third pad electrode 510 are stacked to form the display pad DPAD″.

[0159] Referring to FIGS. 7 and 8, it can be confirmed that a phenomenon occurs in which the second planarization layer 162 peels off from the first interlayer insulating layer 141 and floats up, and when the second pad electrode 722 is pushed upward by the force generated when the second planarization layer 162 floats up, a defect occurs in which the second pad electrode 722 peels off from the third pad electrode 510.

[0160] Referring to FIG. 4 again, according to an embodiment of the present disclosure, the first pad electrode 322 of the display pad is formed in the same layer as the first gate electrode 320 of the first transistor T1, and the end of the second pad electrode 322 is clad (overlapped and in direct contact) with the second interlayer insulating layer 150 made of an inorganic insulating material, so that the adhesion between the insulating layer clad with the end of the first pad electrode 322, the lower first gate insulating layer 143 made of an inorganic insulator, and the upper touch insulating layer 191 is increased, thereby preventing the insulating layer from peeling off and floating up around the display pad DPAD. As a result, it is possible to prevent a defect in which the pad electrode of the display pad DPAD peels off due to the force generated when the insulating layer around the display pad DPAD floats up, and to prevent a defect in which the signal of the driving IC 800 mounted on the display pad DPAD is not transmitted to the display area.

[0161] Further, the first pad electrode 322 of the display pad is formed of the same material in the same layer as the first gate electrode 320 of the first transistor T1, and in a state where the first pad electrode 322 is covered with the second interlayer insulating layer 150, an etching process for forming the first electrode 610 of the light-emitting element ED is advanced, so that it is possible to prevent the generation of metal scum during the etching process for forming the first electrode 610, and to prevent a short circuit between the first electrode 610 and the second electrode 630 of the light-emitting element ED due to the metal scum, thereby preventing the occurrence of a dark spot defect.

[0162] The organic light-emitting display device according to the embodiment of the present specification described above can be briefly described as follows.

[0163] Embodiments of the present specification provide an organic light-emitting display device including a first inorganic insulating layer disposed on a substrate including a display region and a pad region, a first gate electrode of a first transistor disposed on the first inorganic insulating layer and located in the display region, and a first pad electrode located in the pad region, a second inorganic insulating layer covering the first gate electrode and the first pad electrode and having an opening exposing at least a part of the first pad electrode, an organic insulating layer disposed on the second inorganic insulating layer in the display region, a light-emitting element disposed on the organic insulating layer, a sealing layer covering the light-emitting element, a touch sensor layer disposed on the sealing layer, a second pad electrode disposed on the second inorganic insulating layer in the pad region and connected to the first pad electrode through the opening, and a display pad including the first pad electrode and the second pad electrode.

[0164] Embodiments of the present specification further provide an organic light-emitting display device including a second transistor disposed on the substrate, where the first inorganic insulating layer includes a first interlayer insulating layer covering a second gate electrode of the second transistor, a buffer layer disposed on the first interlayer insulating layer, and a gate insulating layer of the first transistor disposed on the buffer layer.

[0165] Embodiments of the present specification can provide an organic light-emitting display device in which the second inorganic insulating layer is in contact with the gate insulating layer of the first transistor.

[0166] Embodiments of the present specification further provide an organic light-emitting display device including a dummy pad electrode overlapping the first pad electrode, where the dummy pad electrode is made of the same material in the same layer as the second gate electrode.

[0167] Embodiments of the present specification can provide an organic light-emitting display device in which the second pad electrode is made of the same material in the same layer as the touch sensor layer.

[0168] According to the embodiments of the present specification, a touch buffer layer disposed on the encapsulation layer in the display region, and a touch insulation layer disposed on the touch buffer layer in the display region and on the second inorganic insulation layer in the pad region are further included. The touch sensor layer and the second pad electrode are disposed on the touch insulation layer, and the touch insulation layer has an opening connected to the opening of the second inorganic insulation layer, thereby providing an organic light-emitting display device.

[0169] Embodiments of the present specification can provide an organic light-emitting display device including a substrate including a display region and a pad region; a first inorganic insulation layer disposed on the substrate; a first pad electrode disposed on the first inorganic insulation layer in the pad region; a second inorganic insulation layer disposed on the first inorganic insulation layer and the first pad electrode and having an opening exposing at least a part of the first pad electrode; a second pad electrode disposed on the second inorganic insulation layer and connected to the first pad electrode through the opening; and a display pad including the first pad electrode and the second pad electrode.

[0170] According to the embodiments of the present specification, an organic light-emitting display device can be provided in which the lower surface of the second inorganic insulation layer contacts the upper surface of the first inorganic insulation layer.

[0171]

[0171] According to the embodiments of the present specification, a first gate electrode of a first transistor disposed between the first inorganic insulation layer and the second inorganic insulation layer in the display region; an organic insulation layer disposed on the second inorganic insulation layer; a light-emitting element disposed on the organic insulation layer; an encapsulation layer covering the light-emitting element; and a touch sensor layer disposed on the encapsulation layer are further included, thereby providing an organic light-emitting display device.

[0172] According to the embodiments of the present specification, an organic light-emitting display device can be provided in which the first pad electrode is made of the same material in the same layer as the first gate electrode.

[0173] According to the embodiments of the present specification, an organic light-emitting display device can be provided in which the second pad electrode is made of the same material as the touch sensor layer.

[0174] According to the embodiments of the present specification, a second gate electrode of a second transistor disposed under a first inorganic insulating layer in the display region, and a dummy pad electrode disposed under the first pad electrode in the pad region and overlapping the first pad electrode are further included, and the dummy pad electrode can provide an organic light-emitting display device made of the same material in the same layer as the second gate electrode.

[0175] According to the embodiments of the present specification, an organic light-emitting display device can be provided that includes a first interlayer insulating layer disposed on the substrate in the display region and the pad region and covering the second gate electrode, a buffer layer disposed on the first interlayer insulating layer, and a gate insulating layer of the first transistor disposed on the buffer layer.

[0176] According to the embodiments of the present specification, a touch buffer layer disposed on the encapsulation layer in the display region, and a touch insulating layer having an opening disposed on the touch buffer layer and the second inorganic insulating layer in the pad region and connected to the opening of the second inorganic insulating layer are further included, and the touch sensor layer and the second pad electrode can provide an organic light-emitting display device disposed on the touch insulating layer.

[0177] The manufacturing method of an organic light-emitting display device according to an embodiment of the present specification includes the steps of forming a first inorganic insulating layer disposed on a substrate including a display area and a pad area; forming a first gate electrode on the first inorganic insulating layer in the display area and forming a first pad electrode on the first inorganic insulating layer in the pad area; forming a second inorganic insulating layer covering the first gate electrode and the first pad electrode on the first inorganic insulating layer; forming an organic insulating layer on the second inorganic insulating layer in the display area; forming a light-emitting element on the organic insulating layer; forming a sealing layer covering the light-emitting element; forming an opening exposing at least a part of the first pad electrode in the second inorganic insulating layer in the pad area; forming a touch sensor layer on the sealing layer in the display area and forming a second pad electrode connected to the first pad electrode through the opening on the second inorganic insulating layer in the pad area. A manufacturing method of an organic light-emitting display device can be provided.

[0178] According to an embodiment of the present specification, in the step of forming the light-emitting element, a manufacturing method of an organic light-emitting display device can be provided, in which the first pad electrode is covered with the second inorganic insulating layer.

[0179] According to an embodiment of the present specification, after forming the sealing layer and before forming an opening in the second inorganic insulating layer, the method further includes the steps of forming a touch buffer layer on the sealing layer, forming a touch insulating layer on the touch buffer layer, and forming an opening in the touch insulating layer above the first pad electrode. A manufacturing method of an organic light-emitting display device can be provided, in which the opening in the second inorganic insulating layer is formed below the opening in the touch insulating layer.

[0180] According to the embodiments of this specification, the pad electrode of the display pad is formed in the same layer as the gate electrode of the first transistor (driving transistor), and the pad electrode of the display pad is covered with an inorganic insulating layer on top of the gate electrode of the first transistor. By patterning the anode electrode of the light-emitting element in this state, it is possible to prevent the generation of metal scum during the process of patterning the anode electrode, and it is possible to prevent the short circuit between the anode electrode and the cathode electrode of the light-emitting element caused by the metal scum, thereby providing an organic light-emitting display device and a manufacturing method thereof that can prevent dark spot defects.

[0181] According to the embodiments of this specification, by disposing inorganic insulating layers above and below the pad electrode, it is possible to prevent the lifting between the insulating layers around the pad electrode, and by preventing the pad electrode of the display pad from peeling due to the force generated by the lifting of the insulating layer, it is possible to prevent the defect that the signal of the driving IC mounted on the display pad cannot be transmitted to the display area.

[0182] The above description is merely an illustrative explanation of the technical idea of the present disclosure. Those with ordinary knowledge in the technical field to which the present disclosure belongs can make various modifications and deformations without departing from the essential characteristics of the present disclosure. In addition, the embodiments shown in the present disclosure are not intended to limit the technical idea of the present disclosure, but are for the purpose of explanation. Therefore, the scope of the technical idea of the present disclosure is not limited by these embodiments.

Description of Reference Numerals

[0183] 110 Substrate 120 Lower Buffer Layer 130 Second Gate Insulating Layer

Claims

1. a substrate including a display area, a pad area, and a bending area; a switching transistor provided in the display area and including a first gate electrode disposed on the substrate; a first inorganic insulating layer disposed on the display area and the pad area of the substrate, having an opening area in the bending area, and covering the first gate electrode; a driving transistor provided in the display area and including a second gate electrode disposed on the first inorganic insulating layer; a first pad electrode disposed on the first inorganic insulating layer and located in the pad area; a second inorganic insulating layer disposed on the first inorganic insulating layer, covering a part of the second gate electrode in the display area and a part of the first pad electrode in the pad area, having an opening area in the bending area, and having an opening exposing a part of the first pad electrode; a first source electrode and a first drain electrode of the switching transistor disposed on the second inorganic insulating layer in the display area; a second source electrode and a second drain electrode of the driving transistor disposed on the same layer as the first source electrode and the first drain electrode in the display area; a first planarization layer disposed on the second inorganic insulating layer and the bending area in the display area, having an opening area in the pad area, and covering the first source electrode, the first drain electrode, the second source electrode, and the second drain electrode; a second planarization layer disposed on the first planarization layer in the display area and the bending area, having an opening area in the pad area; a light-emitting element disposed on the second planarization layer in the display area; a connection electrode provided between the first planarization layer and the second planarization layer and connecting the driving transistor to the light-emitting element; a sealing layer covering the light-emitting element in the display area; a touch sensor layer disposed on the sealing layer in the display area; a second pad electrode disposed on the second inorganic insulating layer and the first pad electrode in the pad area and connected to the first pad electrode through the opening; a display pad including the first pad electrode and the second pad electrode; and an organic light-emitting display device including the same.

2. The first inorganic insulating layer is A first interlayer insulating layer covering the first gate electrode; A buffer layer disposed on the first interlayer insulating layer; A gate insulating layer of the driving transistor, disposed in the display region and the pad region and between the second gate electrode of the driving transistor and the buffer layer in the display region; The organic light-emitting display device according to claim 1, comprising:

3. The organic light-emitting display device according to claim 2, wherein the second inorganic insulating layer contacts the gate insulating layer in the display region and the pad region.

4. Further comprising a dummy pad electrode overlapping the first pad electrode in the pad region, The dummy pad electrode is made of the same material as the first gate electrode and is disposed in the same layer as the first gate electrode. The organic light-emitting display device according to claim 2.

5. The organic light-emitting display device according to claim 1, wherein the second pad electrode is made of the same material as the touch sensor layer.

6. A touch buffer layer disposed on the encapsulation layer in the display region; A touch insulating layer disposed on the touch buffer layer in the display region and the second inorganic insulating layer in the pad region; Further comprising: The touch sensor layer is disposed on the touch insulating layer in the display region, the second pad electrode is disposed on the touch insulating layer in the pad region, and the touch insulating layer has an opening connected to the opening of the second inorganic insulating layer in the pad region. The organic light-emitting display device according to claim 1.

7. A substrate including a display region, a pad region, and a bending region; A first gate electrode of a switching transistor provided in the display region and disposed on the substrate; A first inorganic insulating layer disposed on the display region and the pad region of the substrate, covering the first gate electrode, and having an opening region in the bending region; A second gate electrode of a driving transistor provided in the display region and disposed on the first inorganic insulating layer; A first pad electrode disposed on the first inorganic insulating layer in the pad region; A second inorganic insulating layer disposed on the first inorganic insulating layer and the first pad electrode in the pad region, having an opening region in the bending region and exposing a part of the first pad electrode. The first source electrode and the first drain electrode of the switching transistor, disposed on the second inorganic insulating layer; The second source electrode and the second drain electrode of the driving transistor, disposed on the same layer as the first source electrode and the first drain electrode; A first planarization layer, disposed on the second inorganic insulating layer and the bending region in the display region, having an opening region in the pad region, and covering the first source electrode, the first drain electrode, the second source electrode, and the second drain electrode; A second planarization layer, disposed on the first planarization layer in the display region and the bending region, and having an opening region in the pad region; A connection electrode, provided between the first planarization layer and the second planarization layer, and connected to the second drain electrode; A second pad electrode, disposed on the second inorganic insulating layer and the first pad electrode in the pad region, and connected to the first pad electrode through the opening; A display pad including the first pad electrode and the second pad electrode; An organic light-emitting display device including the above.

8. The organic light-emitting display device according to claim 7, wherein the lower surface of the second inorganic insulating layer is in contact with the upper surface of the first inorganic insulating layer.

9. A light-emitting element, disposed on the second planarization layer in the display region; A sealing layer, covering the light-emitting element in the display region; A touch sensor layer, disposed on the sealing layer in the display region The organic light-emitting display device according to claim 7, further including the above.

10. The organic light-emitting display device according to claim 9, wherein the first pad electrode is made of the same material as the second gate electrode and is disposed in the same layer as the second gate electrode.

11. The organic light-emitting display device according to claim 9, wherein the second pad electrode is made of the same material as the touch sensor layer.

12. A dummy pad electrode, disposed below the first pad electrode in the pad region and overlapping the first pad electrode The organic light-emitting display device further includes the above, wherein the dummy pad electrode is made of the same material as the first gate electrode and is disposed in the same layer as the first gate electrode. The organic light-emitting display device according to claim 9.

13. The first inorganic insulating layer is A first interlayer insulating layer that is disposed in the display region and the pad region and covers the first gate electrode in the display region; A buffer layer disposed on the first interlayer insulating layer in the display region and the pad region; A gate insulating layer of the driving transistor that is disposed between the second gate electrode and the buffer layer in the display region and is disposed on the buffer layer in the pad region; The organic light-emitting display device according to claim 12, comprising:

14. A touch buffer layer disposed on the encapsulation layer in the display region; A touch insulating layer that is disposed on the touch buffer layer in the display region, is disposed on the second inorganic insulating layer in the pad region, and has an opening connected to the opening of the second inorganic insulating layer in the pad region; Further comprising: The touch sensor layer is disposed on the touch insulating layer in the display region, and the second pad electrode is disposed on the touch insulating layer in the pad region. The organic light-emitting display device according to claim 9.

15. Forming a first gate electrode of a switching transistor in the display region of a substrate including a display region, a pad region, and a bending region; Forming a first inorganic insulating layer on the substrate and on the first gate electrode; Forming a second gate electrode of a driving transistor on the first inorganic insulating layer in the display region and forming a first pad electrode on the first inorganic insulating layer in the pad region; Forming a second inorganic insulating layer on the first inorganic insulating layer to cover the second gate electrode in the display region and the first pad electrode in the pad region; Removing the first inorganic insulating layer and the second inorganic insulating layer in the bending region; Forming a first source electrode and a first drain electrode of the switching transistor and a second source electrode and a second drain electrode of the driving transistor on the second inorganic insulating layer in the display region; Forming a first planarization layer on the second inorganic insulating layer in the display region, the first planarization layer having an opening region in the pad region and covering the first source electrode, the first drain electrode, the second source electrode, and the second drain electrode; Forming a connection electrode on the first planarization layer in the display region; In the display area, forming a second planarization layer having an opening area in the pad area and covering the connection electrode on the first planarization layer; Forming a light-emitting element on the second planarization layer in the display area; Forming a sealing layer covering the light-emitting element in the display area; Forming an opening in the second inorganic insulating layer in the pad area to expose a part of the first pad electrode; Forming a touch sensor layer on the sealing layer in the display area; Forming a second pad electrode on the second inorganic insulating layer and the first pad electrode in the pad area, and connecting the second pad electrode to the exposed part of the first pad electrode through the opening in the second inorganic insulating layer; A method for manufacturing an organic light-emitting display device, comprising:

16. The method for manufacturing an organic light-emitting display device according to claim 15, wherein during the formation of the light-emitting element, the first pad electrode is covered with the second inorganic insulating layer.

17. After forming the sealing layer and before forming an opening in the second inorganic insulating layer, Forming a touch buffer layer on the sealing layer in the display area; Forming a touch insulating layer on the touch buffer layer in the display area and on the second inorganic insulating layer located on the first pad electrode in the pad area; Forming an opening in the touch insulating layer in the pad area; Further comprising: The opening in the second inorganic insulating layer in the pad area is located below the opening in the touch insulating layer. The method for manufacturing an organic light-emitting display device according to claim 15.

18. A substrate including a display area, a pad area, and a bending area; A first inorganic insulating layer provided on the substrate in the display area and the pad area, including a first gate insulating layer of a switching transistor provided in the display area of the substrate, and having an opening area in the bending area; A second gate insulating layer of a driving transistor disposed in the display area; A second inorganic insulating layer disposed on the first inorganic insulating layer in the display area and the pad area, and having an opening area in the bending area; A first source electrode and a first drain electrode of the switching transistor disposed on the second inorganic insulating layer in the display area; In the display area, the second source electrode and the second drain electrode of the driving transistor, which are disposed on the same layer as the first source electrode and the first drain electrode, In the display area, on the first source electrode, the first drain electrode, the second source electrode, the second drain electrode, and the second inorganic insulating layer, and in the bending area, on the substrate, and having an opening area in the pad area, a first planarization layer; A second planarization layer disposed on the first planarization layer in the display area and the bending area and having an opening area in the pad area; A connection electrode provided between the first planarization layer and the second planarization layer and connected to the second drain electrode; A display pad of the pad area disposed in the pad area and including a first pad electrode on the first inorganic insulating layer of the pad area and a second pad electrode on the first pad electrode and the second inorganic insulating layer of the pad area including The second pad electrode is connected to the first pad electrode through an opening of the second inorganic insulating layer in the pad area. An organic light-emitting display device.

19. The organic light-emitting display device according to claim 18, wherein the first pad electrode is made of the same material as the gate electrode of the driving transistor and is disposed in the same layer as the gate electrode of the driving transistor.

20. A substrate including a display area, a pad area, and a bending area; A switching transistor provided in the display area and including a first gate electrode disposed on the substrate; A first inorganic insulating layer disposed on the display area and the pad area, covering the first gate electrode, and having an opening area in the bending area; A driving transistor disposed in the display area and including a second gate electrode located on the first inorganic insulating layer of the display area; A second inorganic insulating layer located on the first inorganic insulating layer of the display area and the pad area, having an opening area in the bending area, and covering the second gate electrode; The first source electrode and the first drain electrode of the switching transistor disposed on the second inorganic insulating layer in the display area In the display area, the second source electrode and the second drain electrode of the driving transistor, which are disposed on the same layer as the first source electrode and the first drain electrode, a first planarization layer disposed on the second inorganic insulating layer in the display area, covering the first source electrode, the first drain electrode, the second source electrode, and the second drain electrode, and having an opening area in the pad area; a second planarization layer disposed on the first planarization layer in the display area and the bending area, and having an opening area in the pad area; a connection electrode provided between the first planarization layer and the second planarization layer; a light-emitting element on the second planarization layer in the display area, connected to the driving transistor via the connection electrode; a touch sensor layer on the light-emitting element in the display area; a first pad electrode on the first inorganic insulating layer in the pad area, having an end covered by the second inorganic insulating layer in the pad area and made of the same material as the second gate electrode; a second pad electrode on the second inorganic insulating layer in the pad area, connected to the first pad electrode through a hole in the second inorganic insulating layer in the pad area and made of the same material as the touch sensor layer A display device including.

21. The display device according to claim 20, wherein the first pad electrode is disposed in the same layer as the second gate electrode.

22. The display device further includes a touch insulating layer in the display area and the pad area, disposed on the second inorganic insulating layer in the pad area and having a hole overlapping with the hole in the second inorganic insulating layer, The second pad electrode is in contact with the first pad electrode through the hole in the touch insulating layer and the hole in the second inorganic insulating layer. The display device according to claim 20.

23. The display device according to claim 20, further including a dummy pad electrode that overlaps the first pad electrode and the second pad electrode in the pad area, is made of the same material as the first gate electrode, and is disposed in the same layer as the first gate electrode.

24. The organic light-emitting display device according to claim 1, wherein the pad area is disposed so as to be hidden behind the display area.

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